JP5506485B2 - 2D optical scanner - Google Patents

Description

  The present invention relates to a two-dimensional optical scanner used in an optical apparatus. For example, as an optical device, there are a laser printer, a barcode reader, a projector, and the like.

  Recently, there are two-dimensional optical scanners using semiconductor manufacturing process technology and microelectromechanical system (MEMS) technology.

  FIG. 7 is a perspective view showing a conventional piezoelectric drive type two-dimensional optical scanner (see Patent Document 1).

  In FIG. 7, the movable frame 11 of the semiconductor substrate having the cavity 11a acts on the mirror M, a pair of elastic beams supporting the mirror M so as to be swingable, that is, torsion bars 12a and 12b, and torsion bars 12a and 12b. A pair of piezoelectric actuators 13a, 13b; 14a, 14b are formed. In this case, the mirror M has a rectangular reflecting surface located at the center of the cavity 11 a of the movable frame 11. Each torsion bar 12a, 12b has a proximal end coupled to the movable frame 11 and a distal end coupled to the mirror M. Each piezoelectric actuator 13a, 13b; 14a, 14b acts as a cantilever, its base end is fixed to the movable frame, and its tip is connected to the torsion bars 12a, 12b. Therefore, by applying a driving voltage to the piezoelectric actuators 13a, 13b; 14a, 14b, the piezoelectric actuators 13a, 13b; 14a, 14b are bent and deformed, and the torsion bars 12a, 12b are torsionally deformed. Rotates around the XX axis.

In FIG. 7, a movable frame 11, a pair of elastic beams for supporting the movable frame 11 in a swingable manner, that is, torsion bars 22a and 22b, and torsion bars 22a and 22b are supported on a support frame 21 of a semiconductor substrate having a cavity 21a. Two pairs of piezoelectric actuators 23a, 23b; 24a, 24b are formed. In this case, the movable frame 11 is located at the center of the cavity 21 a of the support frame 21. Each torsion bar 22 a, 22 b has a proximal end connected to the support frame 21 and a distal end connected to the movable frame 11. Each piezoelectric actuator 23a, 23b; 24a, 24b acts as a cantilever, its base end is fixed to the support frame 21 , and the tip is connected to the torsion bars 22a, 22b. Therefore, by applying a driving voltage to the piezoelectric actuators 23a, 23b; 24a, 24b, the piezoelectric actuators 23a, 23b; 24a, 24b are deformed in a curved manner, and the torsion bars 22a, 22b are torsionally deformed. 11 rotates around the YY axis, and the mirror M rotates around the YY axis.

  In this way, a two-dimensional optical scanner is configured by rotating the mirror M about the X-X axis and the Y-Y axis.

  In the hollow portion 11a of the movable frame 11, gaps G1 and G2 are provided between the mirror M and the movable frame 11 to form an escape path for air to be pushed when the mirror M is tilted. In the hollow portion 21a, gaps G3 and G4 are provided between the movable frame 11 and the support frame 21 to form an escape path for air that is pushed when the movable frame 11 is tilted.

  The electromagnetic dielectric type two-dimensional optical scanner has the same configuration as the piezoelectric driving type two-dimensional optical scanner shown in FIG. 7 (see Patent Document 2).

JP 2008-20701 A JP-A-7-175005 JP 2001-234331 A JP 2002-177765 A JP 2003-81694 A

  The gaps G1 and G2 between the mirror M and the movable frame 11 in FIG. 7 are set to be small, for example, as shown in FIG. If the gaps G3 and G4 are also reduced, for example, as shown in FIG. 8B, the two-dimensional optical scanner is reduced in size, and thus the size of the semiconductor chip of the two-dimensional optical scanner is reduced. The yield rises. 8A and 8B are sectional views taken along lines AA and BB in FIG. 7, and S indicates a mounting substrate.

  However, when the gaps G1, G2, G3, G4 are made small and the region surrounded by the support 21 is filled with a gas such as air, the piezoelectric actuator 13a, 13b, 14a, 14b are driven to deflect the mirror M around the XX axis, or as shown in FIG. 8B, the piezoelectric actuators 23a, 23a; 24a, 24b are driven to move the movable frame 11, that is, When the mirror M is deflected around the YY axis, there is no air escape path, so the pressure in the cavity on the back side of the mirror M increases. Since this pressure rise also becomes a resistance against the movement of the mirror M, even if the piezoelectric actuators 13a, 13b; 14a, 14b or the piezoelectric actuators 23a, 23a; 24a, 24b generate the same output, the inclination of the mirror M Has the problem of becoming smaller.

  Conversely, the gaps G1 and G2 between the mirror M and the movable frame 11 in FIG. 7 are set large, for example, as shown in FIG. 9A, and the gap between the movable frame 11 and the support frame 21 is set. When the gaps G3 and G4 are also enlarged, for example, as shown in FIG. 9B, the piezoelectric actuators 13a and 13b; 14a and 14b are driven to deflect the mirror M around the XX axis, or the piezoelectric actuator 23a. , 23a; When the movable frame 11, that is, the mirror M is deflected around the YY axis by driving the 24a, 24b, since the air escape path is large, the pressure in the cavity on the back side of the mirror M does not increase. . Therefore, the inclination of the mirror M is not reduced. 9A and 9B are sectional views taken along lines AA and BB in FIG.

  However, when the gaps G1, G2, G3, and G4 are increased, the size of the two-dimensional optical scanner is increased, so that the size of the semiconductor chip of the two-dimensional optical scanner is increased, and as a result, the manufacturing yield is reduced.

  Thus, the production yield and the inclination of the mirror M are in a trade-off relationship, and it has been impossible to improve both. Note that if the two-dimensional optical scanner is sealed in a vacuum or under reduced pressure, it is possible to improve both the manufacturing yield and increase the tilt of the mirror M. In this case, however, the mounting method becomes complicated, resulting in an increase in manufacturing cost and reliability. It causes a decline in sex.

In order to solve the above-described problem, a two-dimensional optical scanner according to the present invention includes a movable frame in which a first cavity is formed, a mirror having a reflective surface located in the first cavity of the movable frame, A first elastic beam having a proximal end coupled to the movable frame and a distal end coupled to the mirror; a first actuator located in the first cavity of the movable frame and connected to the first elastic beam; A support frame in which a second cavity portion in which the frame is located is formed; a second elastic beam having a proximal end connected to the support frame; and a second elastic beam connected to the movable frame; and between the support frame and the movable frame And a second actuator connected to the second elastic beam . The movable frame is provided with one or more through holes , each through hole being surrounded by the remaining portion of the movable frame. It is what. Thereby, the through-hole of the movable frame acts as an air escape path.

  Each through hole is surrounded by the remaining portion of the movable frame. Thereby, a through-hole suppresses the fall of the rigidity of a movable frame.

  Furthermore, a plurality of through-holes are provided symmetrically about the first and second elastic beams. This maintains the mass balance and does not induce vibrations.

  Furthermore, the through hole is not provided in the extension region of the first and second elastic beams. This suppresses a decrease in rigidity in the vicinity of the elastic beam root of the movable frame.

According to the present invention, since the gap between the mirror and the movable frame and the gap between the movable frame and the support frame are reduced to reduce the size of the optical chip of the two-dimensional optical scanner, the manufacturing yield increases. At the same time, the inclination of the mirror can be increased by securing an air escape path through the through hole of the movable frame.

1 is a perspective view showing an embodiment of a piezoelectric drive type two-dimensional optical scanner optical deflector according to the present invention. FIG. It is a top view of the two-dimensional optical scanner of FIG. 2A and 2B are diagrams for explaining the operation of the two-dimensional optical scanner in FIG. 1, where FIG. 2A is a cross-sectional view taken along line AA in FIG. 1, and FIG. FIG. 5 is a cross-sectional view for explaining a method of manufacturing the piezoelectric drive type two-dimensional optical scanner of FIG. 1. FIG. 5 is a cross-sectional view for explaining a method of manufacturing the piezoelectric drive type two-dimensional optical scanner of FIG. 1. FIG. 5 is a cross-sectional view for explaining a method of manufacturing the piezoelectric drive type two-dimensional optical scanner of FIG. 1. It is a perspective view which shows the conventional two-dimensional optical scanner of a piezoelectric drive system. 8A and 8B are diagrams for explaining the problem of the two-dimensional optical scanner in FIG. 7, where FIG. 8A is a cross-sectional view taken along line AA in FIG. 7, and FIG. 8A and 8B are diagrams for explaining the problem of the two-dimensional optical scanner in FIG. 7, where FIG. 8A is a cross-sectional view taken along line AA in FIG. 7, and FIG.

  FIG. 1 is a perspective view showing an embodiment of a piezoelectric drive type two-dimensional optical scanner according to the present invention, and FIG. 2 is a plan view of the two-dimensional optical scanner of FIG.

  As shown in FIGS. 1 and 2, a plurality of through holes 15 are provided in the movable frame 11 of FIG. 7. The through hole 15 is surrounded by the remaining portion of the movable frame 11, thereby suppressing a decrease in rigidity of the movable frame 11. Therefore, it is possible to prevent the movable frame from being deformed due to the swinging while providing the through hole. The through hole 15 is provided symmetrically about the torsion bars 12a, 12b, 22a, 22b. Thereby, the balance of mass is maintained and vibration is suppressed. Furthermore, the through hole 15 is not provided in the extended region of the torsion bars 12a, 12b, 22a, 22b. Thereby, the fall of the rigidity of the vicinity of the base of the torsion bars 12a, 12b, 22a, 22b of the movable frame 11 is suppressed. As a result, the bending of the movable frame 11 due to the through hole 15 is suppressed. The through hole 15 can have various shapes such as a circle and a triangle. Moreover, although the through-hole 15 is not limited to providing in all the sides of a movable frame like FIG. 1, it is preferable to be provided in the side parallel to the torsion bars 22a and 22b, for example. This is because the movable frame swings about the torsion bars 22a and 22b, and this position moves the most, so the air resistance is also the largest.

Since the through hole 15 of the movable frame 11 is escape of air, Fig. 1, as shown in FIG. 2, between the air gap G1, G2 and the movable frame 11 between the mirror M and the movable frame 11 and the support frame 21 empty gap G3, G4 can be as small as possible. Therefore, the piezoelectric actuator 23a of the cavity-shaped movable frame 11 of the support 21, 23b, 24a, becomes substantially the same shape as the combined 24b, cavity shape of the movable frame 11 is a mirror M and the piezoelectric actuator 13a, 13b, The shape is almost the same as the combined shape of 14a and 14b. As a result, the two-dimensional optical scanner is reduced in size, so that the size of the semiconductor chip of the two-dimensional optical scanner can be reduced, and as a result, the manufacturing yield can be increased.

  That is, when the piezoelectric actuators 13a and 13b; 14a and 14b are driven to deflect the mirror M around the XX axis, the air is passed through the through-hole 15 of the movable frame 11 as shown in FIG. Therefore, the cavity pressure between the mirror M and the mounting substrate S does not increase. Therefore, the inclination of the mirror M around the XX axis does not become small.

  Similarly, when the piezoelectric actuators 23a, 23b; 24a, 24b are driven to deflect the mirror M around the Y-Y axis, the air is passed through the through-hole 15 of the movable frame 11 as shown in FIG. Therefore, the cavity pressure between the mirror M and the mounting substrate S does not increase. Therefore, the inclination of the mirror M around the Y-Y axis does not become small.

  Next, a manufacturing method of the piezoelectric drive type two-dimensional optical scanner of FIG. 1 will be described with reference to FIGS. 4, 5, and 6 are cross-sectional views taken along line AA in FIG. 1.

  First, referring to FIG. 4A, a silicon-on-insulator (SOI) substrate is prepared. The SOI substrate has a single crystal silicon support layer (also called a handling layer) 1011 having a thickness of about 100 to 600 μm, for example 525 μm, an intermediate silicon oxide layer (also called a BOX layer) 1012 having a thickness of about 0.5 to 2 μm, for example 2 μm, and a thickness of about It consists of a single crystal silicon active layer 1013 of 5-100 μm, for example 50 μm.

  Next, referring to FIG. 4B, the SOI substrate is thermally oxidized to form silicon oxide layers 1021 and 1022 having a thickness of about 0.1 to 1.0 μm, for example, 0.5 μm on the back surface and the front surface.

  Next, referring to FIG. 4C, a thickness of about 30 to 100 μm, for example 50 nm, and a thickness of about 100 to 300 μm, for example, 150 nm are formed on the silicon oxide layer 1022 by sputtering, electron beam (EB) deposition, or the like. The Pt films are sequentially formed, whereby the lower electrode layer 1031 is formed. Next, a piezoelectric layer 1032 made of lead zirconate titanate (PZT) having a thickness of about 1 to 10 μm, for example, 3 μm, is formed on the lower electrode layer 1031 by a reactive arc discharge ion plating method. For the reactive arc discharge ion plating method, see Patent Documents 3, 4, and 5. Next, an upper electrode layer 1033 made of Pt having a thickness of 10 to 200 nm, for example, about 150 nm is formed on the piezoelectric layer 1032 by sputtering, EB vapor deposition, or the like.

  Next, referring to FIG. 5A, the upper electrode layer 1033 and the piezoelectric layer 1032 are patterned using photolithography and dry etching. Next, the lower electrode layer 1031 is patterned using photolithography and dry etching. At this time, the lower electrode layer 1031 in the region of the mirror M is covered with the photoresist layer, and remains as a reflective layer. If it is desired to increase the light reflectivity of the mirror M, Al and Au having a thickness of about 100 to 500 nm are formed by sputtering, EB vapor deposition, etc., and the lower part is formed using photolithography and dry etching. A reflective layer having a high reflectance is formed on the electrode layer 1031.

  Next, referring to FIG. 5B, the silicon oxide layer 1021 is removed, and a hard mask layer 104 for high frequency coupled plasma reactive ion etching (ICP-RIE) is formed in a region corresponding to the support frame 1. To do. That is, a thick resist layer is formed on the surface by photolithography, and the silicon oxide layer 1021 is removed by wet etching using buffered hydrofluoric acid (BHF) using the thick resist layer as an etching mask. Next, Al is formed on the single crystal silicon support layer 1011 by a sputtering method, an EB vapor deposition method, or the like, and patterned by photolithography and an etching method to form a hard mask layer 104 corresponding to the support frame 21.

  Next, as shown in FIG. 5C, in the ICP-RIE apparatus, the single crystal silicon support layer 1011 is removed halfway using the hard mask layer 104 as an etching mask to form the cavity 1a of the support frame 1. . Note that there is no problem even if the hard mask layer 104 remains attached to the support frame 1.

  Next, referring to FIG. 6A, after forming a photoresist pattern 105 covering the patterned lower electrode layer 1031, piezoelectric layer 1032 and upper electrode layer 1033 by photolithography, an ICP-RIE apparatus is formed. Then, the silicon oxide layer 1022, the single crystal silicon active layer 1013, and the single crystal silicon support layer 1011 are removed by etching. In this case, the photoresist pattern 105 is provided with an opening corresponding to the through hole 15 of the movable frame 11.

  In this embodiment mode, the movable frame 11 is provided by leaving a part of the single crystal silicon support layer 1011. However, the movable frame 11 may not be left. In this case, the cavity 1a is formed at a time, and the single crystal silicon support layer 1011 is removed up to the intermediate silicon oxide layer 1012.

  Note that the ICP-RIE method is an etching method suitable for anisotropically etching single crystal silicon. Therefore, the single crystal silicon support layer 1011 and the single crystal silicon active layer 1013 can be etched vertically.

  Finally, referring to FIG. 6B, the intermediate silicon oxide layer 1012 is etched away using buffered hydrofluoric acid (BHF). Thereby, the rotation of the mirror M, the torsional deformation of the torsion bars 12a, 12b, 22a and 22b, and the bending of the piezoelectric actuators 13a, 13b, 14a, 14b, 23a, 23b, 24a and 24b are possible. Then, each device is separated (chip) from the wafer by a dicing process and mounted on a transistor outline (TO) type package by die bonding and wire bonding.

In the embodiment in which a through hole 15 in the movable frame 11 mentioned above, when the air gap G1, G2, and G3, G4 and sealed, when the resonance frequency of the mirror M is 25 kHz, the piezoelectric actuator sinusoidal input When the peak-to-peak voltage V _pp and the frequency were 20 V and 25 kHz, the mirror deflection angle (maximum deflection angle) was ± 10 °. On the other hand, without providing the through-hole 15, when the air gap G1, G2, and G3, G4 and sealed state, in the same driving conditions, the mirror swing angle (maximum deflection angle) was ± 7.5 °. Also, as in the prior art, without providing the through-hole 15, the mirror deflection angle the same driving condition, in order to obtain a maximum deflection angle has to empty gap G1, G2, G3, G4 and above 100 [mu] m, the device The size increased by more than 10%.

  The present invention can also be applied to an electromagnetic dielectric type two-dimensional optical scanner.

M: Mirror 11: Movable frame 11a: Cavities 12a, 12b: Elastic beam (torsion bar)
13a, 13b; 14a, 14b: Piezoelectric actuator 15: Through hole 21: Support frame 21a: Cavity 22a, 22b: Elastic beam (torsion bar)
23a, 23b; 24a, 24b: piezoelectric actuator 1011: single crystal silicon support layer 1012: intermediate silicon oxide layer 1013: single crystal silicon active layer 1021, 1022: silicon oxide layer 1031: lower electrode layer 1032: piezoelectric layer 1033: upper part Electrode layer 104: Hard mask layer 105: Photoresist pattern layer

Claims (4)

A movable frame in which a first cavity is formed;
A mirror having a reflective surface located within the first cavity of the movable frame,
A first elastic beam having a proximal end coupled to the movable frame and a distal end coupled to the mirror;
A first actuator located in the first cavity of the movable frame and connected to the first elastic beam;
A support frame formed with a second cavity where the movable frame is located;
A second elastic beam having a proximal end coupled to the support frame and a distal end coupled to the movable frame ;
A second actuator located in the second cavity between the support frame and the movable frame and connected to the second elastic beam ;
Providing one or more through holes in the movable frame ;
A two-dimensional optical scanner in which each through hole is surrounded by the remaining portion of the movable frame .   The two-dimensional scanner according to claim 1, wherein the position where the through-hole is provided is a side parallel to the second elastic beam of the movable frame.   The two-dimensional optical scanner according to claim 1, wherein the plurality of through holes are provided symmetrically with respect to the first and second elastic beams.   The two-dimensional optical scanner according to claim 1, wherein the through hole is not provided in an extension region of the first and second elastic beams.

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