JP5365730B1 - Rotating magnetic field sensor - Google Patents

Abstract

An error caused by magnetic anisotropy in a magnetic detecting element is reduced.
A rotating field sensor 1 includes detection circuits 10, 20, and 30 that generate signals S1, S2, and S3, and arithmetic circuits 61 and 62, respectively. The detection circuit 10 includes a first MR element, and the detection circuit 30 includes a third MR element. The detection circuit 20 includes a second MR element in which a first magnetic anisotropy that is not set in the first and third MR elements is set. The first arithmetic circuit 61 obtains correction information for correcting an error generated in the detected value θs due to the second magnetic anisotropy generated in the first MR element. When the first arithmetic circuit 61 uses the pair of signals S1 and S2 obtained at the same time as the signal pair, based on the transition state of the signal pair obtained when the direction of the rotating magnetic field rotates within a predetermined range, Find correction information. The arithmetic circuit 62 calculates the detection value θs using the signals S1 and S3 and the correction information.
[Selection] Figure 3

Description

  The present invention relates to a rotating magnetic field sensor that detects an angle formed by the direction of a rotating magnetic field with respect to a reference direction.

  In recent years, a rotating magnetic field sensor has been used to detect the rotational position of an object in various applications such as detection of the opening of a throttle valve of an automobile, detection of the rotational position of a steering of an automobile, and detection of the rotational position of an automobile wiper. Is widely used. The rotating magnetic field sensor is used not only when detecting the rotational position of the object, but also when detecting a linear displacement of the object. In a system using a rotating magnetic field sensor, generally, means (for example, a magnet) that generates a rotating magnetic field whose direction rotates in conjunction with the rotation or linear motion of an object is provided. The rotating magnetic field sensor detects an angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction using a magnetic detection element. As a result, the rotational position and linear displacement of the object are detected.

  As a sensor that can be used as a rotating magnetic field sensor, a magnetoresistive effect element (hereinafter also referred to as an MR element) that is a magnetoresistive effect type magnetic sensing element using a magnetoresistive effect is used as a magnetic sensing element. It has been known. Patent Documents 1 to 4 describe a sensor using a spin valve MR element as a magnetic detection element. A spin-valve MR element has a fixed magnetization layer whose magnetization direction is fixed, a free layer whose magnetization direction changes according to the direction of the rotating magnetic field, and a nonmagnetic layer disposed between the fixed magnetization layer and the free layer. And have a layer.

JP-T-2002-525609 JP 2008-268219 A JP 2009-36770 A JP 2010-32484 A

  In a rotating magnetic field sensor using a spin-valve MR element as a magnetic detection element, as described in Patent Document 4, an error may occur in the detection angle due to variations in magnetic characteristics of the MR element. Patent Document 4 describes a technique for reducing detection angle errors caused by manufacturing variations of MR elements. In other words, this technique is a technique for reducing an error in detection angle when a rotating magnetic field sensor is completed.

  The detection angle error that can occur in the rotating magnetic field sensor includes an error that occurs after the rotating magnetic field sensor is installed, in addition to the error that is present when the product is completed as described above. One of the causes of the detection angle error appearing after the installation of the rotating magnetic field sensor is that an induced magnetic anisotropy is acquired in the free layer of the MR element. Such induced magnetic anisotropy of the free layer occurs, for example, when the temperature of the MR element drops from a high temperature while an external magnetic field in a specific direction is applied to the MR element. Such a situation may occur, for example, when the rotating magnetic field sensor is installed in an automobile and the rotating magnetic field sensor and the rotating magnetic field sensor are in a specific positional relationship when the automobile is not operating. More specifically, the above situation may occur when a rotating magnetic field sensor is used to detect the position of an object that stops at a fixed position when not in operation, such as a car wiper.

  A rotating magnetic field sensor is required to reduce an error in a detection angle that occurs due to induced magnetic anisotropy generated after installation. Up to this point, in a rotating magnetic field sensor using a spin valve type MR element as a magnetic detecting element, there is a problem in the case where induced magnetic anisotropy is acquired in the free layer of the MR element after the rotating magnetic field sensor is installed. I have explained the point. However, this problem applies in general to cases where some magnetic anisotropy occurs in the magnetic detection element in a magnetic field detection element including a magnetic detection element, particularly a magnetoresistive effect type magnetic detection element.

  The present invention has been made in view of such problems, and an object thereof is a rotating magnetic field sensor including a magnetic detection element, particularly a magnetoresistive effect type magnetic detection element, and magnetic anisotropy is generated in the magnetic detection element. An object of the present invention is to provide a rotating magnetic field sensor that can reduce an error in a detected value.

  The rotating field sensor of the present invention generates a detection value having a correspondence relationship with the angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction. The direction of the rotating magnetic field at the reference position rotates as viewed from the rotating magnetic field sensor. The rotating field sensor of the present invention includes a first detection circuit, a second detection circuit, a first arithmetic circuit, and a second arithmetic circuit.

  The first detection circuit includes a first magnetic detection element, and generates a first signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction. The second detection circuit includes a second magnetic detection element, and generates a second signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction. The first magnetic anisotropy is present in at least one of the first and second magnetic sensing elements so that variations of the first signal and the second signal due to the first magnetic anisotropy are different from each other. Is set.

  The first arithmetic circuit obtains correction information for correcting an error generated in the detection value due to the second magnetic anisotropy generated in the first magnetic detection element. Further, the first arithmetic circuit, when a pair of the first signal and the second signal obtained at the same time is a signal pair, the transition of the signal pair obtained in the process in which the direction of the rotating magnetic field rotates within a predetermined range. The correction information is obtained on the basis of the above aspect. The second arithmetic circuit calculates a corrected detection value using the first signal and the correction information.

  In the rotating field sensor of the present invention, the first magnetic anisotropy may be set in at least the second magnetic detection element of the first and second magnetic detection elements. In this case, the second magnetic detection element includes a magnetic layer whose magnetization direction changes according to the direction of the rotating magnetic field, and the first magnetic anisotropy is set by the shape magnetic anisotropy of the magnetic layer. May be. The second magnetic detection element is disposed between the magnetization fixed layer whose magnetization direction is fixed, the free layer whose magnetization direction changes according to the direction of the rotating magnetic field, and between the magnetization fixed layer and the free layer. You may have a nonmagnetic layer. In this case, the first magnetic anisotropy may be set by the shape magnetic anisotropy of the free layer. The easy axis direction of the free layer may not be parallel to or orthogonal to the magnetization direction of the magnetization fixed layer.

  In the rotating field sensor of the present invention, the first arithmetic circuit may represent the signal pair by coordinates in an orthogonal coordinate system, and represent the transition of the signal pair by two-dimensional pattern information. In this case, the first arithmetic circuit may hold information on a correspondence relationship between the two-dimensional pattern information and the correction information, and obtain correction information corresponding to the two-dimensional pattern information using pattern recognition.

  In the rotating field sensor of the present invention, when the angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction is θ and the correction information is A and α, the first signal is θ−Asin {2 It may be expressed by a trigonometric function with (θ−α)} as a variable.

  The rotating field sensor of the present invention may further include a third detection circuit. The third detection circuit includes a third magnetic detection element, and generates a third signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction. The phase of the third signal is different from the phase of the first signal. In this case, the second arithmetic circuit may calculate the corrected detection value using the third signal in addition to the first signal and the correction information.

  Alternatively, the rotating field sensor of the present invention may further include a third detection circuit, a fourth detection circuit, and a third arithmetic circuit. The third detection circuit includes a third magnetic detection element, and generates a third signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction. The fourth detection circuit includes a fourth magnetic detection element, and generates a fourth signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction. The phase of the third signal is different from the phase of the first signal. The third magnetic anisotropy has a third magnetic anisotropy in at least one of the third and fourth magnetic detection elements so that the variations of the third signal and the fourth signal due to the third magnetic anisotropy are different from each other. Is set. The third arithmetic circuit obtains second correction information for correcting an error generated in the detection value due to the fourth magnetic anisotropy generated in the third magnetic detection element. The third arithmetic circuit obtains the second signal obtained in the process in which the direction of the rotating magnetic field rotates within a predetermined range when a pair of the third signal and the fourth signal obtained at the same time is a second signal pair. Second correction information is obtained based on the mode of transition of the signal pair. In this case, the second arithmetic circuit may calculate the corrected detection value using the third signal and the second correction information in addition to the first signal and the correction information.

  In the rotating field sensor of the present invention, at least one of the first and second magnetic detection elements is arranged so that the variations of the first signal and the second signal due to the first magnetic anisotropy are different from each other. First magnetic anisotropy is set. When the second magnetic anisotropy occurs in the first magnetic detection element, the transition state of the signal pair changes depending on the second magnetic anisotropy aspect. Therefore, it is possible to obtain information on the second magnetic anisotropy from the transition of the signal pair. This information is correction information for correcting an error that occurs in the detection value due to the second magnetic anisotropy. In the present invention, the first arithmetic circuit obtains correction information based on the transition state of the signal pair, and the second arithmetic circuit calculates the corrected detection value using the first signal and the correction information. To do. Thus, according to the present invention, there is an effect that it is possible to reduce an error that occurs in a detection value due to magnetic anisotropy occurring in the magnetic detection element.

1 is a perspective view showing a schematic configuration of a rotating field sensor according to a first embodiment of the invention. It is explanatory drawing which shows the definition of the direction and angle in the 1st Embodiment of this invention. It is a circuit diagram which shows the structure of the rotating field sensor which concerns on the 1st Embodiment of this invention. FIG. 4 is a block diagram showing a configuration of a first arithmetic circuit shown in FIG. 3. It is a perspective view which shows a part of 1st and 3rd MR element in the 1st Embodiment of this invention. It is a perspective view which shows a part of 2nd MR element in the 1st Embodiment of this invention. It is a wave form diagram which shows an example of the waveform of the 1st signal in the 1st Embodiment of this invention, and the waveform of a 2nd signal. It is explanatory drawing which shows three examples of the mode of transition of the signal pair in the 1st Embodiment of this invention. It is a schematic diagram which shows typically the matrix of the correction information used when creating an identification dictionary by learning. It is a perspective view which shows the structure of the outline of the rotating field sensor which concerns on the 2nd Embodiment of this invention. It is explanatory drawing which shows the shape and arrangement | positioning of the 1st thru | or 4th MR element in the 2nd Embodiment of this invention. It is a circuit diagram which shows the structure of the rotating field sensor which concerns on the 2nd Embodiment of this invention.

[First Embodiment]
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, a schematic configuration of the rotating field sensor according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a perspective view showing a schematic configuration of a rotating field sensor according to the present embodiment. FIG. 2 is an explanatory diagram showing definitions of directions and angles in the present embodiment.

  As shown in FIG. 1, the rotating field sensor 1 according to the present embodiment detects a rotating field MF. Here, the reference plane, the reference position, and the reference direction are assumed as follows. The reference plane is a virtual plane having a predetermined positional relationship with the rotating magnetic field sensor 1. The reference position is located in the reference plane. The reference direction is located in the reference plane and intersects the reference position. The direction of the rotating magnetic field MF at the reference position and located in the reference plane rotates around the reference position when viewed from the rotating magnetic field sensor 1. In the following description, the direction of the rotating magnetic field MF at the reference position refers to the direction located in the reference plane. The rotating field sensor 1 generates a detection value having a correspondence relationship with an angle formed by the direction of the rotating magnetic field MF at the reference position with respect to the reference direction.

  FIG. 1 shows a cylindrical magnet 5 as an example of means for generating the rotating magnetic field MF. The magnet 5 has an N pole and an S pole that are arranged symmetrically about a virtual plane including the central axis of the cylinder. The magnet 5 rotates around the central axis of the cylinder. The magnet 5 has two end surfaces located at both ends in the central axis direction of the cylinder. The rotating field sensor 1 is disposed so as to face one end surface of the magnet 5. In the present embodiment, the reference plane is, for example, a plane parallel to one end face of the magnet 5. The reference position is, for example, a position where the rotating magnetic field sensor 1 detects the rotating magnetic field MF. The reference position may be a position where the rotation center C including the center axis of the cylinder and the reference plane intersect. In this case, when the magnet 5 rotates, the direction of the rotating magnetic field MF at the reference position rotates around the reference position as viewed from the rotating magnetic field sensor 1.

  The configuration of the means for generating the rotating magnetic field MF and the rotating magnetic field sensor 1 is not limited to the example shown in FIG. The means for generating the rotating magnetic field MF and the rotating magnetic field sensor 1 are configured so that the rotating magnetic field sensor MF and the rotating magnetic field sensor 1 are relative to each other so that the direction of the rotating magnetic field MF at the reference position rotates when viewed from the rotating magnetic field sensor 1. It is sufficient if the positional relationship changes. For example, in the magnet 5 and the rotating field sensor 1 arranged as shown in FIG. 1, the magnet 5 may be fixed and the rotating field sensor 1 may rotate, or the magnet 5 and the rotating field sensor 1 may be in opposite directions. The magnet 5 and the rotating magnetic field sensor 1 may rotate at different angular velocities in the same direction.

  Further, instead of the magnet 5, a magnet in which one or more sets of N poles and S poles are alternately arranged in a ring shape may be used, and the rotating field sensor 1 may be disposed in the vicinity of the outer periphery of the magnet. In this case, at least one of the magnet and the rotating magnetic field sensor 1 may be rotated.

  Further, instead of the magnet 5, a magnetic scale in which a plurality of sets of N poles and S poles are alternately arranged in a straight line may be used, and the rotating field sensor 1 may be disposed in the vicinity of the outer periphery of the magnetic scale. In this case, at least one of the magnetic scale and the rotating magnetic field sensor 1 may be moved linearly in the direction in which the N and S poles of the magnetic scale are aligned. This example will be described in detail later as a second embodiment.

  The reference plane, reference position, and reference direction can also be assumed in the configuration of the rotating magnetic field sensor 1 and the means for generating the various rotating magnetic fields MF described above.

  The rotating magnetic field sensor 1 includes a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first detection circuit 10 includes a first magnetic detection element. The second detection circuit 20 includes a second magnetic detection element. The third detection circuit 30 includes a third magnetic detection element. In FIG. 1, for ease of understanding, the first to third detection circuits 10, 20, and 30 are drawn separately, but the first to third detection circuits 10, 20, and 30 are integrated. May be. In FIG. 1, the first to third detection circuits 10, 20, and 30 are stacked in a direction parallel to the rotation center C, but the stacking order is not limited to the example shown in FIG.

  The first detection circuit 10 generates a first signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field MF at the reference position with respect to the reference direction. The second detection circuit 20 generates a second signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field MF at the reference position with respect to the reference direction. The third detection circuit 30 generates a third signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field MF at the reference position with respect to the reference direction.

  In the present embodiment, the positions of the detection circuits 10, 20, and 30 in the space do not exactly match. Similarly, the positions of the first to third magnetic detection elements included in the detection circuits 10, 20, and 30 in the space do not exactly match. However, the difference between the positions of the detection circuits 10, 20, and 30 in the space is sufficiently small compared to the size of the region in which the direction of the rotating magnetic field MF is the same in space. Therefore, the direction of the rotating magnetic field MF at each position of the detection circuits 10, 20, and 30 is substantially the same. Therefore, by setting an arbitrary position in the detection circuits 10, 20, and 30 as the reference position, the detection circuits 10, 20, and 30 each have an angle formed by the direction of the rotating magnetic field MF at the reference position with respect to the reference direction. A first signal, a second signal, and a third signal having a correspondence relationship can be generated.

  The first to third signals having a corresponding relationship with the angle formed by the direction of the rotating magnetic field MF at the reference position with respect to the reference direction may indicate the detected value of the angle, and are linked to the angle. It may be a value that changes. As will be described in detail later, in the present embodiment, each of the first to third signals is a signal indicating a value that changes in conjunction with the angle, and specifically, the rotating magnetic field MF at the reference position. Is a signal indicating the intensity of the component in a predetermined direction.

  Similarly to the first to third signals, a detected value having a correspondence relationship with the angle formed by the direction of the rotating magnetic field MF at the reference position with respect to the reference direction may also indicate the value of the detected angle. It may be a value that changes in conjunction with the angle. As will be described in detail later, in the present embodiment, the detected value indicates the detected value of the angle.

  Here, with reference to FIG. 2, the definition of the direction and angle in this Embodiment is demonstrated. First, a direction parallel to the rotation center C shown in FIG. 1 and directed from one end face of the magnet 5 toward the rotating magnetic field sensor 1 is defined as a Z direction. Next, two directions perpendicular to the Z direction and orthogonal to each other are defined as an X direction and a Y direction. In FIG. 2, the X direction is represented as a direction toward the right side, and the Y direction is represented as a direction toward the upper side. In addition, a direction opposite to the X direction is defined as -X direction, and a direction opposite to the Y direction is defined as -Y direction.

  Here, the reference position PR is a position where the rotating magnetic field sensor 1 detects the rotating magnetic field MF. The reference direction DR is the X direction. The angle formed by the direction DM of the rotating magnetic field MF at the reference position PR with respect to the reference direction DR is represented by the symbol θ. The direction DM of the rotating magnetic field MF is assumed to rotate counterclockwise in FIG. The angle θ is represented by a positive value when viewed counterclockwise from the reference direction DR, and is represented by a negative value when viewed clockwise from the reference direction DR.

  The first and second detection circuits 10 and 20 detect the component in the first direction D1 of the rotating magnetic field MF at the reference position PR. The third detection circuit 30 detects a component in the second direction D2 of the rotating magnetic field MF at the reference position PR. In the present embodiment, the first direction D1 is a direction rotated 90 ° counterclockwise from the reference direction DR (X direction) and coincides with the Y direction. The second direction D2 coincides with the reference direction DR and the X direction.

  In the present embodiment, at least one of the first and second magnetic detection elements is provided with the first signal so that the variation of the first signal and the second signal caused by the first magnetic anisotropy is different from each other. The magnetic anisotropy is set. The fluctuation caused by the first magnetic anisotropy in the first signal and the second signal is that the first magnetic anisotropy is set in at least one of the first and second magnetic detection elements. Thus, the first and second magnetic detection elements are compared with the case where the first magnetic anisotropy is not set, and the fluctuations that occur in the first signal and the second signal.

  The first magnetic anisotropy may be set in at least the second magnetic detection element of the first and second magnetic detection elements. In the present embodiment, in particular, the first magnetic anisotropy is not set in the first and third magnetic detection elements, but the first magnetic anisotropy is set in the second magnetic detection element. Yes. In this case, fluctuations due to the first magnetic anisotropy do not occur in the first and third signals, but fluctuations due to the first magnetic anisotropy occur in the second signal. As a result, the variations of the first signal and the second signal due to the first magnetic anisotropy are different from each other.

  In the present embodiment, the first magnetic anisotropy is set by the shape magnetic anisotropy of the magnetic layer included in the second magnetic detection element. In FIG. 2, reference numerals 11, 21, and 31 represent planar shapes (shapes viewed from above) of the magnetic layers included in the first magnetic detection element, the second magnetic detection element, and the third magnetic detection element, respectively. ing. As shown in FIG. 2, in the present embodiment, for example, the planar shape of the magnetic layer of the first and third magnetic detection elements is circular, and the planar shape of the magnetic layer of the second magnetic detection element is elliptical. Thus, the first magnetic anisotropy due to the shape anisotropy that is not set in the first and third magnetic detection elements is set in the second magnetic detection element.

  In FIG. 2, the broken line with the symbol DA1 is the easy axis direction of magnetization due to the first magnetic anisotropy set in the second magnetic detection element, that is, the planar shape of the magnetic layer of the second magnetic detection element. It represents the long axis direction of the ellipse. Here, an angle formed by the direction DA1 with respect to the reference direction DR when viewed in the counterclockwise direction from the reference direction DR is represented by a symbol β. The angle β is 0 ° or more and less than 180 °.

  In the first to third magnetic detection elements, a second magnetic anisotropy different from the first magnetic anisotropy occurs, for example, in an acquired manner. The second magnetic anisotropy is, for example, due to induced magnetic anisotropy. The second magnetic anisotropy is, for example, that the temperature of the first to third magnetic sensing elements decreases from a high temperature while an external magnetic field in a specific direction is applied to the first to third magnetic sensing elements. Occurs in some cases. In FIG. 2, the broken line with the symbol DA2 represents the easy axis direction of magnetization due to the second magnetic anisotropy. Here, the angle formed by the direction DA2 with respect to the reference direction DR when viewed counterclockwise from the reference direction DR is represented by the symbol α. The angle α is not less than 0 ° and less than 180 °.

  Next, the configuration of the rotating magnetic field sensor 1 will be described in detail with reference to FIG. FIG. 3 is a circuit diagram showing a configuration of the rotating magnetic field sensor 1. The first detection circuit 10 generates a first signal S1 having a correspondence relationship with the angle θ. The second detection circuit 20 generates a second signal S2 having a correspondence relationship with the angle θ. The third detection circuit 30 generates a third signal S3 having a correspondence relationship with the angle θ. The first and second signals S1 and S2 are signals corresponding to the intensity of the component in the first direction D1 of the rotating magnetic field MF at the reference position PR. The third signal S3 is a signal corresponding to the intensity of the component in the second direction D2 of the rotating magnetic field MF at the reference position PR.

  The first to third signals S1 to S3 change periodically with the same signal period T. In the state where the second magnetic anisotropy does not occur in the first and third magnetic detection elements, the waveforms of the first and third signals S1 and S3 are ideally sinusoidal (Sine). Waveform and cosine waveform). When the second magnetic anisotropy occurs in the first and third magnetic detection elements, the waveforms of the first and third signals S1 and S3 are distorted from sinusoidal curves.

  The waveform of the second signal S2 is distorted from a sine curve due to at least the first magnetic anisotropy. When the second magnetic anisotropy occurs in the second magnetic detection element, the waveform of the second signal S2 is distorted from the sine curve due to the first and second magnetic anisotropies.

  The phase of the third signal S3 is different from the phase of the first signal S1. In the present embodiment, the phase of the third signal S3 is preferably different from the phase of the first signal S1 by an odd multiple of 1/4 of the signal period T. However, the phase difference between the first signal S1 and the third signal S3 may be slightly deviated from an odd multiple of 1/4 of the signal period T from the viewpoint of the accuracy of manufacturing the magnetic detection element. In the following description, it is assumed that the relationship between the phase of the first signal S1 and the phase of the third signal S3 is the above-described preferable relationship.

  The first detection circuit 10 has an output terminal that outputs the first signal S1. The second detection circuit 20 has an output terminal that outputs the second signal S2. The third detection circuit 30 has an output terminal that outputs a third signal S3. As shown in FIG. 3, the rotating field sensor 1 further includes a first arithmetic circuit 61 and a second arithmetic circuit 62. Each of the first and second arithmetic circuits 61 and 62 has two input ends and one output end. The two input terminals of the first arithmetic circuit 61 are connected to the output terminals of the first and second detection circuits 10 and 20, respectively. The two input terminals of the second arithmetic circuit 62 are connected to the output terminals of the third detection circuit 30 and the first arithmetic circuit 61, respectively.

  The second arithmetic circuit 62 calculates a detection value θs having a correspondence relationship with the angle θ. In the present embodiment, the detected value θs is the value of the angle θ detected by the rotating magnetic field sensor 1. The first and second arithmetic circuits 61 and 62 can be realized by a single microcomputer, for example. The operation of the first and second arithmetic circuits 61 and 62 and the calculation method of the detected value θs will be described in detail later.

  The first detection circuit 10 includes a Wheatstone bridge circuit 14 and a difference detector 15. The Wheatstone bridge circuit 14 includes a power supply port V1, a ground port G1, two output ports E11 and E12, a first pair of magnetic detection elements R11 and R12 connected in series, and a second connected in series. A pair of magnetic detection elements R13 and R14. One end of each of the magnetic detection elements R11 and R13 is connected to the power supply port V1. The other end of the magnetic detection element R11 is connected to one end of the magnetic detection element R12 and the output port E11. The other end of the magnetic detection element R13 is connected to one end of the magnetic detection element R14 and the output port E12. The other ends of the magnetic detection elements R12 and R14 are connected to the ground port G1. A power supply voltage having a predetermined magnitude is applied to the power supply port V1. The ground port G1 is connected to the ground. The difference detector 15 outputs a first signal S1, which is a signal corresponding to the potential difference between the output ports E11 and E12, to the first arithmetic circuit 61.

  The circuit configuration of the second detection circuit 20 is the same as that of the first detection circuit 10. That is, the second detection circuit 20 includes a Wheatstone bridge circuit 24 and a difference detector 25. The Wheatstone bridge circuit 24 includes a power supply port V2, a ground port G2, two output ports E21 and E22, a first pair of magnetic detection elements R21 and R22 connected in series, and a second connected in series. A pair of magnetic detection elements R23 and R24. One end of each of the magnetic detection elements R21 and R23 is connected to the power supply port V2. The other end of the magnetic detection element R21 is connected to one end of the magnetic detection element R22 and the output port E21. The other end of the magnetic detection element R23 is connected to one end of the magnetic detection element R24 and the output port E22. The other ends of the magnetic detection elements R22 and R24 are connected to the ground port G2. A power supply voltage having a predetermined magnitude is applied to the power supply port V2. The ground port G2 is connected to the ground. The difference detector 25 outputs a second signal S2 that is a signal corresponding to the potential difference between the output ports E21 and E22 to the first arithmetic circuit 61.

  The circuit configuration of the third detection circuit 30 is the same as that of the first detection circuit 10. That is, the third detection circuit 30 includes a Wheatstone bridge circuit 34 and a difference detector 35. The Wheatstone bridge circuit 34 includes a power supply port V3, a ground port G3, two output ports E31 and E32, a first pair of magnetic detection elements R31 and R32 connected in series, and a second connected in series. A pair of magnetic detection elements R33 and R34. One end of each of the magnetic detection elements R31 and R33 is connected to the power supply port V3. The other end of the magnetic detection element R31 is connected to one end of the magnetic detection element R32 and the output port E31. The other end of the magnetic detection element R33 is connected to one end of the magnetic detection element R34 and the output port E32. The other ends of the magnetic detection elements R32 and R34 are connected to the ground port G3. A power supply voltage having a predetermined magnitude is applied to the power supply port V3. The ground port G3 is connected to the ground. The difference detector 35 outputs a third signal S3, which is a signal corresponding to the potential difference between the output ports E31 and E32, to the second arithmetic circuit 62.

  In the present embodiment, as all the magnetic detection elements included in the Wheatstone bridge circuit (hereinafter referred to as a bridge circuit) 14, 24, 34, MR elements that are magnetoresistive effect type magnetic detection elements, in particular, spin-valve type elements. An MR element is used. The spin valve MR element may be a TMR element or a GMR element. The TMR element or GMR element includes a magnetization fixed layer whose magnetization direction is fixed, a free layer that is a magnetic layer whose magnetization direction changes according to the direction DM of the rotating magnetic field MF, and a magnetization layer between the magnetization fixed layer and the free layer. And a nonmagnetic layer disposed thereon. In the TMR element, the nonmagnetic layer is a tunnel barrier layer. In the GMR element, the nonmagnetic layer is a nonmagnetic conductive layer. In the TMR element or the GMR element, the resistance value changes according to the angle formed by the magnetization direction of the free layer with respect to the magnetization direction of the magnetization fixed layer, and when this angle is 0 °, the resistance value becomes the minimum value. When the angle is 180 °, the resistance value becomes the maximum value. In the following description, the magnetic detection elements included in the bridge circuits 14, 24, and 34 are referred to as MR elements. The first to third magnetic detection elements are referred to as first to third MR elements. In FIG. 3, a solid arrow indicates the magnetization direction of the magnetization fixed layer in the MR element, and a white arrow indicates the magnetization direction of the free layer in the MR element.

  In the first detection circuit 10, the magnetization direction of the magnetization fixed layer in the MR elements R11 and R14 is parallel to the first direction D1 (Y direction), and the magnetization of the magnetization fixed layer in the MR elements R12 and R13. This direction is opposite to the magnetization direction of the magnetization fixed layer in the MR elements R11 and R14. In FIG. 2, the arrow denoted by reference numeral DP1 represents the magnetization direction of the magnetization fixed layer in the MR elements R11 and R14. In this case, the potential difference between the output ports E11 and E12 changes according to the intensity of the component in the first direction D1 (Y direction) of the rotating magnetic field MF. Accordingly, the first detection circuit 10 detects the intensity of the component in the first direction D1 of the rotating magnetic field MF and outputs the first signal S1 representing the intensity.

  In the second detection circuit 20, the magnetization direction of the magnetization fixed layer in the MR elements R21 and R24 is a direction parallel to the first direction D1 (Y direction), and the magnetization of the magnetization fixed layer in the MR elements R22 and R23. This direction is opposite to the magnetization direction of the magnetization fixed layer in the MR elements R21 and R24. In FIG. 2, the arrow denoted by reference numeral DP2 represents the magnetization direction of the magnetization fixed layer in the MR elements R21 and R24. In this case, the potential difference between the output ports E21 and E22 changes according to the intensity of the component in the first direction D1 (Y direction) of the rotating magnetic field MF. Therefore, the second detection circuit 20 detects the intensity of the component in the first direction D1 of the rotating magnetic field MF, and outputs a second signal S2 representing the intensity.

  In the third detection circuit 30, the magnetization direction of the magnetization fixed layer in the MR elements R31 and R34 is a direction parallel to the second direction D2 (X direction), and the magnetization of the magnetization fixed layer in the MR elements R32 and R33. This direction is opposite to the magnetization direction of the magnetization fixed layer in the MR elements R31 and R34. In FIG. 2, the arrow with the symbol DP3 represents the direction of magnetization of the magnetization fixed layer in the MR elements R31 and R34. In this case, the potential difference between the output ports E31 and E32 changes according to the intensity of the component in the second direction D2 (X direction) of the rotating magnetic field MF. Therefore, the third detection circuit 30 detects the intensity of the component in the second direction D2 of the rotating magnetic field MF, and outputs a third signal S3 representing the intensity.

  Note that the magnetization direction of the magnetization fixed layer in the plurality of MR elements in the detection circuits 10, 20, and 30 may be slightly deviated from the above-mentioned direction from the viewpoint of the accuracy of manufacturing the MR element.

  Next, an example of the configuration of the MR element and the first magnetic anisotropy will be described with reference to FIG. 2, FIG. 5, and FIG. FIG. 5 is a perspective view showing a part of the first and third MR elements. In this example, the first and third MR elements have a plurality of lower electrodes, a plurality of MR films, and a plurality of upper electrodes. The plurality of lower electrodes 42 are disposed on a substrate (not shown). Each lower electrode 42 has an elongated shape. A gap is formed between two lower electrodes 42 adjacent to each other in the longitudinal direction of the lower electrode 42. As shown in FIG. 5, MR films 50 are disposed on the upper surface of the lower electrode 42 in the vicinity of both ends in the longitudinal direction.

  The MR film 50 includes a free layer 51, a nonmagnetic layer 52, a magnetization fixed layer 53, and an antiferromagnetic layer 54 that are sequentially stacked from the lower electrode 42 side. In the example shown in FIG. 5, the MR film 50 has a cylindrical shape. In this case, the planar shape of the free layer 51 is circular. The free layer 51 is electrically connected to the lower electrode 42. The antiferromagnetic layer 54 is made of an antiferromagnetic material and causes exchange coupling with the magnetization fixed layer 53 to fix the magnetization direction of the magnetization fixed layer 53. The plurality of upper electrodes 43 are disposed on the plurality of MR films 50. Each upper electrode 43 has an elongated shape and is disposed on two lower electrodes 42 adjacent to each other in the longitudinal direction of the lower electrode 42 to electrically connect the antiferromagnetic layers 54 of the two adjacent MR films 50 to each other. To do. With such a configuration, the MR element shown in FIG. 5 has a plurality of MR films 50 connected in series by a plurality of lower electrodes 42 and a plurality of upper electrodes 43. The arrangement of the layers 51 to 54 in the MR film 50 may be upside down from the arrangement shown in FIG.

  FIG. 6 is a perspective view showing a part of the second MR element. The configuration of the second MR element is basically the same as that of the first and third MR elements. However, in the second MR element, the shape of the MR film 50 is different from the shape of the MR film 50 in the first and third MR elements. In the example shown in FIG. 6, the MR film 50 has an elliptic cylinder shape. In this case, the planar shape of the free layer 51 is elliptical.

  As described above, in the present embodiment, the planar shape of the free layer 51 of the first and third MR elements is circular, and the planar shape of the free layer 51 of the second MR element is elliptical. First magnetic anisotropy due to shape anisotropy, which is not set in the first and third MR elements, is set in the second MR element.

  In the second MR element, the major axis direction of the ellipse that is the planar shape of the free layer 51 is the easy axis direction of magnetization of the free layer 51. The easy axis direction of the free layer 51 coincides with the easy axis direction DA1 due to the first magnetic anisotropy shown in FIG. In the second MR element, it is preferable that the easy axis direction of the free layer 51 is not parallel to or orthogonal to the magnetization direction of the magnetization fixed layer 53 (first direction D1).

  The shape of the MR film 50 is not limited to the examples shown in FIGS. For example, the MR film 50 in the first and third MR elements may have a prismatic shape with a square top surface, and the MR film 50 in the second MR element has a prismatic shape with a rectangular top surface. You may do it.

  Next, the waveforms of the first and third signals S1 and S3 will be described. In the example shown in FIG. 3, in the state where the second magnetic anisotropy is not generated in the first and third MR elements, ideally, the magnetization direction of the magnetization fixed layer of the third MR element is It is orthogonal to the magnetization direction of the magnetization fixed layer of the first MR element. In this case, ideally, the waveform of the first signal S1 is a sine waveform depending on the angle θ, and the waveform of the third signal S3 is a cosine waveform depending on the angle θ. Become. In this case, the phase of the third signal S3 differs from the phase of the first signal S1 by ¼ of the signal period T, that is, π / 2 (90 °).

  When the angle θ is larger than 0 ° and smaller than 180 °, the first signal S1 is a positive value, and when the angle θ is larger than 180 ° and smaller than 360 °, the first signal S1 is Negative value. Further, when the angle θ is not less than 0 ° and less than 90 °, and when it is greater than 270 ° and less than or equal to 360 °, the third signal S3 is a positive value, and the angle θ is greater than 90 ° and greater than 270 °. When small, the third signal S3 is a negative value.

  As described above, in the present embodiment, in the state where the second magnetic anisotropy is not generated in the first and third MR elements, the waveforms of the first and third signals S1 and S3 are ideal. Is a sinusoidal curve. However, when the second magnetic anisotropy is acquired in the first and third MR elements, the waveforms of the first and third signals S1 and S3 are distorted from sinusoidal curves. The second magnetic anisotropy generated in the first and third MR elements is due to the induced magnetic anisotropy generated in the free layer 51 of the MR element. The induced magnetic anisotropy of the free layer 51 occurs, for example, when the temperature of the MR element falls from a high temperature while an external magnetic field in a specific direction is applied to the MR element.

  The first and third signals S1 and S3 whose waveforms are distorted by the second magnetic anisotropy are approximately represented by a trigonometric function using a variable including an angular variation term based on the second magnetic anisotropy. be able to. Specifically, the first and third signals S1 and S3 can be approximately expressed by the following equations (1) and (2).

S1 = sin [θ-Asin {2 (θ-α)}] (1)
S3 = cos [θ-Asin {2 (θ−α)}] (2)

  In the above formulas (1) and (2), Asin {2 (θ−α)} is an angular variation term based on the second magnetic anisotropy. In this angular variation term, A represents amplitude (maximum value of angular variation), and α represents a phase difference with respect to θ. Note that α in this angular variation term is the same as α shown in FIG. The period of this angular variation term is ½ of the signal period T, that is, π (180 °).

  Next, the waveform of the second signal S2 will be described. In the example shown in FIG. 3, the magnetization direction of the magnetization fixed layer of the second MR element coincides with the magnetization direction of the magnetization fixed layer of the first MR element. In this case, the waveform of the second signal S2 is similar to the waveform of the first signal S1. However, since the second MR element has the first magnetic anisotropy that is not set in the first MR element, the first MR anisotropy causes the first MR anisotropy. The waveform of the second signal S2 is slightly different from the waveform of the first signal S1. In this way, the variations caused by the first magnetic anisotropy in the first signal S1 and the second signal S2 are different from each other.

  When the second magnetic anisotropy is acquired in the second MR element, the waveform of the second signal S2 is distorted from the sine curve due to the first and second magnetic anisotropies. The second signal S2 distorted due to the first and second magnetic anisotropies is approximately an angle variation term based on the first magnetic anisotropy and an angle based on the second magnetic anisotropy. It can be expressed by a trigonometric function using a variable including a fluctuation term. Specifically, the second signal S2 can be approximately expressed by the following equation (3).

  S2 = sin [[theta] -Asin {2 ([theta]-[alpha])}-Bsin {2 ([theta]-[beta])}] (3)

  In the above formula (3), B sin {2 (θ−β)} is an angular variation term based on the first magnetic anisotropy. In this angular variation term, B represents amplitude (maximum value of angular variation), and β represents a phase difference with respect to θ. Note that β in this angular variation term is the same as β shown in FIG. The period of this angular variation term is ½ of the signal period T, that is, π (180 °). Since the first magnetic anisotropy can be set arbitrarily, the values of B and β can also be set arbitrarily.

  FIG. 7 shows an example of the waveform of the first signal S1 and the waveform of the second signal S2. In FIG. 7, the horizontal axis indicates the angle θ, and the vertical axis indicates the magnitudes (voltages) of the first and second signals S1 and S2. The waveform denoted by reference numeral 71 represents the waveform of the first signal S1, and the waveform denoted by reference numeral 72 represents the waveform of the second signal S2. Each waveform shown in FIG. 7 is created by simulation using equations (1) and (3). In this simulation, A in equations (1) and (3) is 5 °, α in equations (1) and (3) is 0 °, B in equation (3) is 10 °, and in equation (3) β was 45 °. As shown in FIG. 7, the waveform of the second signal S2 is slightly different from the waveform of the first signal S1.

  Next, the first arithmetic circuit 61 will be described. The first arithmetic circuit 61 obtains correction information for correcting an error that occurs in the detected value θs due to the second magnetic anisotropy. FIG. 4 is a block diagram illustrating an example of the configuration of the first arithmetic circuit 61. In this example, the first calculation circuit 61 includes a signal pair transition acquisition unit 61A, an identification calculation unit 61B, and an identification dictionary 61C. The first signal S1 and the second signal S2 are input to the signal pair transition acquisition unit 61A. The signal pair transition acquisition unit 61A is a signal obtained in the process in which the direction DM of the rotating magnetic field MF rotates within a predetermined range when the pair of the first signal S1 and the second signal S2 obtained at the same time is a signal pair. Get the transition of the pair. The predetermined range may be 360 °, or may be a range of less than 360 ° as long as correction information can be obtained from the manner of transition of signal pairs described later. In the following description, the predetermined range is 360 °.

  In the present embodiment, the first arithmetic circuit 61, in particular, the signal pair transition acquisition unit 61A represents the signal pair with coordinates in an orthogonal coordinate system. In this orthogonal coordinate system, the horizontal axis represents the magnitude (voltage) of the first signal S1, and the vertical axis represents the magnitude (voltage) of the second signal S2. The signal pair transition acquisition unit 61A represents the transition of the signal pair by two-dimensional pattern information drawn in this orthogonal coordinate system.

  If the waveform of the second signal S2 matches the waveform of the first signal S1, the transition of the signal pair passes through the origin and is drawn as a straight line with a slope of 1 in the orthogonal coordinate system. However, in this embodiment, as described above, since the waveform of the second signal S2 is different from the waveform of the first signal S1, the transition of the signal pair is drawn with a Lissajous curve in the orthogonal coordinate system. It is.

  (A), (b), and (c) of FIG. 8 show three examples of changes in signal pairs. 8A, 8B, and 8C, the horizontal axis indicates the magnitude (voltage) of the first signal S1, and the vertical axis indicates the magnitude (voltage) of the second signal S2. Yes. The three Lissajous curves shown in (a), (b), and (c) of FIG. 8 are created by simulation using equations (1) and (3). In this simulation, α in equations (1) and (3) was 0 °, B in equation (3) was 10 °, and β in equation (3) was 45 °. (A), (b), and (c) of FIG. 8 show Lissajous curves when A in Formulas (1) and (3) is 5 °, 10 °, and 15 °, respectively.

  As shown in FIG. 8, the transition state of the signal pair (the shape of the Lissajous curve) varies depending on the second magnetic anisotropy aspect. Therefore, it is possible to obtain information on the second magnetic anisotropy from the transition state of the signal pair (the shape of the Lissajous curve). This information is correction information for correcting an error that occurs in the detected value θs due to the second magnetic anisotropy. More specifically, the second aspect of magnetic anisotropy is determined by the combination of the values of A and α in the equations (1) and (3). Hereinafter, the combination of the values of A and α is expressed as (A, α). In the present embodiment, it is possible to specify (A, α) from the transition state of the signal pair (the shape of the Lissajous curve), and this (A, α) becomes the correction information.

  As shown in FIG. 4, in the present embodiment, the signal pair transition acquisition unit 61A represents the transition of the signal pair by the two-dimensional pattern information SP, and the two-dimensional pattern information SP and the first signal S1 are discriminated. To the unit 61B. The two-dimensional pattern information SP is data obtained by, for example, decomposing an image drawn in an orthogonal coordinate system as shown in FIG. 8 into a finite number of pixels and binarizing the density for each pixel.

  With the exception of the following exceptions, if (A, α) is different, the transition of the signal pair (the shape of the Lissajous curve) is different. The exceptions are when β is 90 ° and 0 °, that is, in the second MR element, the magnetization easy axis direction DA1 of the free layer 51 is relative to the magnetization direction (first direction D1) of the magnetization fixed layer 53. Parallel and orthogonal. In these cases, on the premise that A is equal, when α = γ (γ is larger than 0 ° and smaller than 90 °) and when α = 180 ° −γ, how signal pairs change (Lissajous curve shape) becomes equal. Therefore, in the second MR element, it is preferable that the easy axis direction DA1 of the free layer 51 is not parallel to or orthogonal to the magnetization direction (first direction D1) of the magnetization fixed layer 53.

  The first arithmetic circuit 61 obtains correction information (A, α) based on the transition state of the signal pair, that is, the two-dimensional pattern information SP, and obtains the correction information (A, α) and the first signal S1 as the first signal. 2 to the second arithmetic circuit 62. In the present embodiment, the first arithmetic circuit 61 obtains correction information (A, α) using pattern recognition. Hereinafter, how to obtain the correction information (A, α) will be described in detail.

  The identification dictionary 61C holds information on the correspondence between the two-dimensional pattern information SP and the correction information (A, α). The identification dictionary 61C, as information on the correspondence relationship between the two-dimensional pattern information SP and the correction information (A, α), specifically, each of a plurality of classes related to the correction information (A, α) and one for each class. The information of the correspondence with the prototype of two or more two-dimensional pattern information is held. The identification calculation unit 61B collates the input two-dimensional pattern information SP with the identification dictionary 61C, and outputs the class to which the input two-dimensional pattern information SP belongs, that is, correction information (A, α). The types of A and α that can be taken in the correction information (A, α) output by the identification calculation unit 61B are determined by, for example, back-calculating from the accuracy of the required detection angle. A method for creating the identification dictionary 61C will be described in detail later.

  As described above, the first arithmetic circuit 61 holds information on the correspondence between the two-dimensional pattern information SP and the correction information (A, α) in the identification dictionary 61C, and uses the above-described pattern recognition in the identification arithmetic unit 61B. Thus, correction information (A, α) corresponding to the two-dimensional pattern information SP obtained by the signal pair transition acquisition unit 61A is obtained.

  In order to obtain the correction information (A, α), the signal pair transition acquisition unit 61A needs to acquire the transition of the signal pair obtained in the process in which the direction DM of the rotating magnetic field MF rotates within a predetermined range. The signal pair transition acquisition unit 61A opens a time interval greater than or equal to a predetermined time, and when the rotating magnetic field sensor 1 is operating and the direction DM of the rotating magnetic field MF rotates more than a predetermined range, the signal pair transition acquisition unit 61A May be set to acquire. Alternatively, the signal pair transition acquisition unit 61A may be set so as to acquire the transition of the signal pair when the user gives an instruction.

  When the signal pair transition acquisition unit 61A acquires a new signal pair transition, and the new two-dimensional pattern information SP is obtained accordingly, the first arithmetic circuit 61 obtains new correction information (A, α) is obtained, and the correction information (A, α) to be output is updated.

  Next, the operation of the second arithmetic circuit 62 and the calculation method of the detection value θs will be described with reference to FIG. As shown in FIG. 3, the first arithmetic circuit 62 receives the first and third signals S1, S3 and the correction information (A, α). The second arithmetic circuit 62 calculates the corrected detection value θs using the first signal S1, the third signal S3, and the correction information (A, α).

  Here, an example of a method for calculating the detection value θs will be described. In this example, the second arithmetic circuit 62 first substitutes the correction information (A, α) obtained by the first arithmetic circuit 61 into the equations (1) and (2). Next, in Expressions (1) and (2), a table showing a correspondence relationship between the angle θ and the calculated values of the first and third signals S1 and S3 by changing the angle θ at a predetermined angular interval. create. Table 1 shows a table showing the correspondence between the angle θ and the calculated value of the first signal S1. Similar to this table, a table indicating the correspondence between the angle θ and the calculated value of the third signal S3 is also created.

In Table 1, θ ₀ , θ ₁ ,..., Θ _m are permutations of values of the angle θ selected with a predetermined angular interval within a range of 0 ° to less than 360 °. _{S1 0, S1 1, ···,} S1 m , respectively, ₀ theta in the formula (1), theta _1, · · ·, represents a calculated value of the first signal S1 obtained by substituting theta _m ing. Here, an arbitrary value in the permutation θ ₀ , θ ₁ ,..., Θ _m is expressed as θ _n, and the calculated value of the first signal S 1 obtained by substituting θ _n into Equation (1) is This is expressed as S1 _n .

Next, the second arithmetic circuit 62 uses the table shown in Table 1 to search for the calculated value S1 _n closest to the first signal S1 input to the second arithmetic circuit 62. Specifically, the second arithmetic circuit 62 searches for a calculated value S1 _n that minimizes the square of the difference from the first signal S1. The second arithmetic circuit 62 sets the angle θ _n corresponding to the calculated value S1 _n obtained by this search as the first candidate for the detected value θs.

  When the angle θ is in the range of 0 ° or more and less than 360 °, the first signal S1 has the same value at two different θs except when the first signal S1 has a maximum value or a minimum value. Therefore, in the above method, in most cases, two first candidates of the detected value θs are obtained for one value of the first signal S1.

Similarly, the second arithmetic circuit 62 uses the table indicating the correspondence relationship between the angle θ and the calculated value of the third signal S3 to obtain the third signal S3 input to the second arithmetic circuit 62. The nearest calculated value S3 _n is searched, and the angle θ _n corresponding to the calculated value S3 _n obtained by this search is set as the second candidate of the detected value θs. Also in this case, in most cases, two second candidates of the detected value θs are obtained for one value of the third signal S3.

One of the two first candidates and one of the two second candidates should match or be very close. When there is a matching first candidate and a second candidate, the second arithmetic circuit 62 sets the matching first and second candidates as the corrected detection value θs. The second arithmetic circuit 62 does not have the matching first candidate and the second candidate, but when there are the first candidate and the second candidate that are very close, for example, among them, the calculated value Of the squares of the difference between S1 _n and the first signal S1 and the squares of the difference between the calculated value S3 _n and the third signal S3, the candidate corresponding to the smaller value S1 _n or S3 _n Is the corrected detection value θs.

  As described above, in the rotating magnetic field sensor 1 according to the present embodiment, the transition of the signal pair (two-dimensional pattern) obtained by the first arithmetic circuit 61 in the process in which the direction DM of the rotating magnetic field MF rotates within a predetermined range. The correction information (A, α) is obtained based on the aspect of the information SP), and the second arithmetic circuit 62 uses the first signal S1, the third signal S3, and the correction information (A, α). The corrected detection value θs is calculated. As a result, according to the present embodiment, even when the second magnetic anisotropy is acquired in the first MR element and the third MR element, the second magnetic anisotropy is caused. It is possible to reduce an error that occurs in the detected value θs.

  Hereinafter, a method of creating the identification dictionary 61C by learning will be described. When creating the identification dictionary 61C by learning, first, a plurality of learning patterns related to the two-dimensional pattern information SP and the value of correction information (A, α) that is a teacher signal for each learning pattern are prepared. The kind of A and the kind of α in the teacher signal are the same as the kind of A and the kind of α that can be taken in the correction information (A, α) output from the identification calculation unit 61B.

The type of A and the type of α in the teacher signal are, for example, by dividing the minimum value and the maximum value at equal intervals for each of A and α to create a matrix (matrix) of (A, α). Prepare in the form of matrix elements. FIG. 9 shows an example of a matrix (A, α) where the maximum value of A is A _max , the minimum value of A is 0, the maximum value of α is α _max , and the minimum value of α is 0. . The plurality of learning patterns are created by calculation using equations (1) and (3) for at least all the elements of the matrix (A, α).

  As a learning pattern corresponding to a specific teacher signal (A, α), in addition to a pattern accurately created based on the specific teacher signal (A, α), fluctuations were given to this accurate pattern. It may contain a pattern. When a plurality of learning patterns include such a fluctuation pattern, learning can be facilitated and output accuracy of the identification calculation unit 61B can be improved.

  Next, a prototype of one or more two-dimensional pattern information for each class is determined by learning using a plurality of learning patterns prepared as described above and a teacher signal for each learning pattern, and the identification dictionary 61C Create When creating the identification dictionary 61C by learning, a support vector machine or a neural network may be used.

In the present embodiment, the second arithmetic circuit 62 calculates the corrected first signal as the corrected detection value by using the first signal S1 and the correction information (A, α). You may do it. This corrected first signal can be, for example, the calculated value S1 _n obtained as described above. Similarly, the second arithmetic circuit 62 may calculate the corrected third signal using the third signal S3 and the correction information (A, α). This corrected third signal can be, for example, the calculated value S3 _n obtained as described above. Then, the second arithmetic circuit 62 may calculate the corrected detection value θs from the calculated values S1 _n and S3 _n by the following equation (4). “Atan” represents an arc tangent.

θs = atan (S1 _n / S3 _n ) (4)

In the range where θs is 0 ° or more and less than 360 °, the solution of θs in Equation (4) has two values that differ by 180 °. However, it is possible to determine which of the two solutions of θs in Equation (4) is the true value of θs by the combination of S1 _n and S3 _n . That is, when S1 _n is a positive value, θs is larger than 0 ° and smaller than 180 °. When S1 _n is a negative value, θs is greater than 180 ° and smaller than 360 °. When S3 _n is a positive value, θs is in the range of 0 ° to less than 90 ° and greater than 270 ° to 360 °. When S3 _n is a negative value, θs is greater than 90 ° and smaller than 270 °. θs can be obtained by the determination of the expression (4) and the positive / negative combination of S1 _n and S3 _n described above.

  In the present embodiment, the second detection circuit 20 may be configured to detect a component in the second direction D2 of the rotating magnetic field MF, similarly to the third detection circuit 30. In this case, the signal pair transition (Lissajous curve) acquired by the signal pair transition acquiring unit 61A is close to a circle. In this case as well, in principle, if (A, α) is different, the transition mode of the signal pair (the shape of the Lissajous curve) is different.

  In the present embodiment, the first and second detection circuits 10 and 20 are configured to detect the component of the rotating magnetic field MF in the second direction D2, and the third detecting circuit 30 is configured to detect the rotating magnetic field MF. You may be comprised so that the component of the 1st direction D1 may be detected. In this case, the signal pair transition (Lissajous curve) acquired by the signal pair transition acquisition unit 61A is similar to the signal pair transition (Lissajous curve) already described in the present embodiment.

  In the present embodiment, when high measurement accuracy is required, the first and second signals S1 and S2 are normalized, and the normalized signals S1 and S2 are subjected to the first calculation. You may make it input to the circuit 61. FIG. In this normalization process, the signals S1 and S2 before normalization are converted into signals S1 and S1 after normalization by linear calculation so that the maximum values and the minimum values of the signals S1 and S2 after normalization are equal to each other. This is a process of converting to S2.

  The rotating magnetic field sensor 1 is used for detecting an angle within an angle range smaller than a predetermined range (for example, 360 °) in which the direction DM of the rotating magnetic field MF needs to rotate in order to obtain the correction information (A, α). It may be used for In this case, the actual angle may be detected after the correction information (A, α) is obtained by rotating the direction DM of the rotating magnetic field MF by a predetermined range or more.

In the present embodiment, instead of the third detection circuit 30, a determination circuit that performs only positive / negative determination of the component in the second direction D2 of the rotating magnetic field MF at the reference position PR may be provided. This discrimination circuit can be realized by, for example, a magnetic detection element having sensitivity in the second direction D2 and a circuit that binarizes the detection output of the magnetic detection element using a predetermined threshold value. . As the magnetic detection element having sensitivity in the second direction D2, for example, a TMR element or GMR element in which the magnetization direction of the magnetization fixed layer is set in a direction parallel to the second direction D2, or the second direction D2 It is possible to use a Hall element set so as to have sensitivity. In this case, the second arithmetic circuit 62 detects based on the first candidate of the detected value θs corresponding to the calculated value S1 _n obtained by the above-described search and the positive / negative discrimination result obtained by the discrimination circuit. The value θs is determined. As described above, in most cases, two first candidates of the detected value θs are obtained for one value of the first signal S1. When one of the two candidates is greater than 0 ° and less than 90 °, the other of the two candidates is greater than 90 ° and less than 180 °. Also, when one of the two candidates is greater than 180 ° and less than 270 °, the other of the two candidates is greater than 270 ° and less than 360 °. On the other hand, when the angle θ is 0 ° or more and less than 90 ° and within a range greater than 270 ° and 360 ° or less, the component in the second direction D2 is a positive value, and θs is greater than 90 ° and 270. When it is smaller than °, the component in the second direction D2 is a negative value. Therefore, using the discrimination result of the discrimination circuit, one of the two first candidates of the detection value θs can be specified as the true detection value θs.

  When the rotating magnetic field sensor 1 is used for an application in which the angle θ is in the range of 90 ° to 270 ° or in the range of 0 ° to 90 ° and 270 ° to less than 360 °, the third The detection circuit 30 may be omitted. That is, in this case, since only one first candidate for the detected value θs is obtained, this candidate can be used as the detected value θs.

[Second Embodiment]
Next, a second embodiment of the present invention will be described. First, a schematic configuration of the rotating field sensor according to the present embodiment will be described with reference to FIG. FIG. 10 is a perspective view showing a schematic configuration of the rotating field sensor according to the present embodiment. In this embodiment, a magnetic scale 120 in which a plurality of sets of N poles and S poles are alternately arranged in a straight line is used as means for generating a rotating magnetic field. In the example illustrated in FIG. 10, the magnetic scale 120 has an upper surface 120 a that is parallel to the direction T in which the N and S poles of the magnetic scale 120 are arranged. The rotating field sensor 101 according to the present embodiment is disposed at a position facing the upper surface 120 a of the magnetic scale 120. In the present embodiment, at least one of the magnetic scale 120 and the rotating magnetic field sensor 101 moves linearly in the direction T so that the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 changes in the direction T.

  As shown in FIG. 10, the rotating magnetic field sensor 101 includes a first detection unit 111 and a second detection unit 112. The configuration of the first detection unit 111 and the second detection unit 112 is the same. Here, the length of one set of adjacent N poles and S poles in the magnetic scale 120 in the direction T is referred to as one pitch. The first detection unit 111 and the second detection unit 112 are arranged at positions shifted from each other by a quarter pitch in the direction T.

  The first detection unit 111 includes a first detection circuit 10 and a second detection circuit 20. The second detection unit 112 includes a third detection circuit 30 and a fourth detection circuit 40. The first detection circuit 10 includes a first magnetic detection element, the second detection circuit 20 includes a second magnetic detection element, the third detection circuit 30 includes a third magnetic detection element, and a fourth The detection circuit 20 includes a fourth magnetic detection element. The magnetic detection element in the present embodiment is, for example, a TMR element or a GMR element, as in the first embodiment. Hereinafter, the magnetic detection element is referred to as an MR element. In FIG. 10, for easy understanding, the first and second detection circuits 10 and 20 are depicted as separate bodies, but the first and second detection circuits 10 and 20 may be integrated. Good. Similarly, in FIG. 10, the third and fourth detection circuits 30 and 40 are depicted as separate bodies, but the third and fourth detection circuits 30 and 40 may be integrated.

  FIG. 11 schematically shows the shape and arrangement of the first to fourth MR elements. In FIG. 11, reference numerals 11, 21, 31, and 41 denote planar shapes of magnetic layers (free layers) included in the first MR element, the second MR element, the third MR element, and the fourth MR element, respectively. (Shape viewed from above). The first and second MR elements are arranged at the same position with respect to the direction T. The third and fourth MR elements are also arranged at the same position with respect to the direction T. The third and fourth MR elements are arranged in the direction T at a position shifted by ¼ pitch with respect to the first and second MR elements. In the present embodiment, the first to fourth MR elements are arranged so that the surfaces of the plurality of layers constituting them are parallel to the upper surface 120 a of the magnetic scale 120. The planar shape of the magnetic layer (free layer) will be described in detail later.

  Next, a reference plane, a reference position, and a reference direction in the present embodiment will be described with reference to FIG. First, in this embodiment, one direction parallel to the direction T (the direction toward the right side in FIG. 10) is defined as the X direction, and one direction perpendicular to the upper surface 120a of the magnetic scale 120 (the direction toward the upper side in FIG. 10). ) Is defined as the Y direction, and one direction perpendicular to the X direction and the Y direction (the direction toward the back in FIG. 10) is defined as the Z direction. In addition, a direction opposite to the X direction is defined as a −X direction.

  Reference plane PL in the present embodiment is a plane perpendicular to the Z direction. The reference position PR is located in the reference plane PL. The reference position PR may be a position where the first detection unit 111 (detection circuits 10 and 20) detects a rotating magnetic field, or a position where the second detection unit 112 (detection circuits 30 and 40) detects a rotating magnetic field. Good. In the following description, the position where the first detection unit 111 detects the rotating magnetic field is referred to as a reference position PR. In the reference plane PL, the direction DM of the rotating magnetic field at the reference position PR rotates around the reference position PR as viewed from the rotating magnetic field sensor 101. When the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 changes by one pitch in the direction T, the rotating magnetic field direction DM at the reference position PR rotates by 360 °. Accordingly, the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 and the rotating magnetic field direction DM at the reference position PR have a corresponding relationship. One pitch corresponds to 360 ° of the rotation angle in the direction DM of the rotating magnetic field. As described above, the first detection unit 111 and the second detection unit 112 are arranged at positions shifted from each other by ¼ pitch with respect to the direction T. Therefore, the second detection unit 112 (detection) The direction of the rotating magnetic field at the position where the circuits 30, 40) detect the rotating magnetic field is shifted by 90 ° with respect to the direction DM of the rotating magnetic field at the reference position PR.

  In the present embodiment, the reference direction DR is the X direction. Further, the angle formed by the direction DM of the rotating magnetic field at the reference position PR with respect to the reference direction DR is represented by the symbol θ. The angle θ is expressed as a positive value when viewed in the clockwise direction from the reference direction DR, and is expressed as a negative value when viewed in the counterclockwise direction from the reference direction DR.

  Next, the configuration of the rotating magnetic field sensor 101 will be described in detail with reference to FIG. FIG. 12 is a circuit diagram showing a configuration of the rotating magnetic field sensor 101. The rotating magnetic field sensor 101 includes the first to fourth detection circuits 10, 20, 30, and 40 described above. The configurations of the first to third detection circuits 10, 20, and 30 are the same as those in the first embodiment except for the shape of the MR film constituting the MR element and the magnetization direction of the magnetization fixed layer in the MR element. It is. The configuration of the fourth detection circuit 40 is the same as that of the second detection circuit 20. That is, the fourth detection circuit 40 includes a Wheatstone bridge circuit 44 and a difference detector 45. The Wheatstone bridge circuit 44 includes a power supply port V4, a ground port G4, two output ports E41 and E42, a first pair of MR elements MR41 and R42 connected in series, and a second connection connected in series. A pair of MR elements R43 and R44 are included. One end of each of the MR elements R41 and R43 is connected to the power supply port V4. The other end of the MR element R41 is connected to one end of the MR element R42 and the output port E41. The other end of the MR element R43 is connected to one end of the MR element R44 and the output port E42. The other ends of the MR elements R42 and R44 are connected to the ground port G4. A power supply voltage having a predetermined magnitude is applied to the power supply port V4. The ground port G4 is connected to the ground. The difference detector 45 outputs a fourth signal S4 that is a signal corresponding to the potential difference between the output ports E41 and E42.

  The rotating magnetic field sensor 101 further includes first to third arithmetic circuits 61, 62, and 63. Each of the first to third arithmetic circuits 61, 62, and 63 has two input ends and one output end. The two input terminals of the first arithmetic circuit 61 are connected to the output terminals of the first and second detection circuits 10 and 20, respectively. Two input terminals of the third arithmetic circuit 63 are connected to output terminals of the third and fourth detection circuits 30 and 40, respectively. Two input terminals of the second arithmetic circuit 62 are connected to output terminals of the first and third arithmetic circuits 61 and 63, respectively.

  The second arithmetic circuit 62 calculates a detection value θs having a correspondence relationship with the angle θ. In the present embodiment, the detected value θs is the value of the angle θ detected by the rotating magnetic field sensor 101, and this corresponds to the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 in the direction T. Yes. Thus, the rotating field sensor 101 according to the present embodiment can detect the position of the rotating field sensor 101 with respect to the magnetic scale 120 in the direction T. The first to third arithmetic circuits 61, 62, and 63 can be realized by a single microcomputer, for example.

  In FIG. 12, a solid arrow indicates the magnetization direction of the magnetization fixed layer in the MR element, and a white arrow indicates the magnetization direction of the free layer in the MR element. In the present embodiment, the magnetization direction of the magnetization fixed layer in the MR elements R11, R14, R21, R24, R31, R34, R41, and R44 is the X direction. Further, the magnetization direction of the magnetization fixed layer in the MR elements R12, R13, R22, R23, R32, R33, R42, and R43 is the −X direction.

  In the present embodiment, each of the first and second detection circuits 10 and 20 detects the intensity of the component in the direction T (X direction, −X direction) of the rotating magnetic field at the reference position PR, and the intensity thereof. The first signal S <b> 1 and the second signal S <b> 2 representing are output to the first arithmetic circuit 61. Compared to the size of the region in which the direction of the rotating magnetic field is equal on the space, the difference between the positions of the detection circuits 10 and 20 in the space is sufficiently small. Therefore, the direction of the rotating magnetic field at each position of the detection circuits 10 and 20 is substantially the same. Therefore, by setting an arbitrary position in the detection circuits 10 and 20 as the reference position PR, the detection circuits 10 and 20 can each have an angle θ formed by the direction DM of the rotating magnetic field at the reference position PR with respect to the reference direction DR. The first signal S1 and the second signal S2 having a correspondence relationship can be generated.

  Further, the third and fourth detection circuits 30 and 40 respectively have a direction T (X direction, −X) of a rotating magnetic field at a position where the second detecting unit 112 (detection circuits 30 and 40) detects the rotating magnetic field. The intensity of the direction component is detected, and the third signal S3 and the fourth signal S4 representing the intensity are output to the third arithmetic circuit 63. Compared with the size of the region where the direction of the rotating magnetic field is equal on the space, the difference between the positions of the detection circuits 30 and 40 in the space is sufficiently small. Therefore, the direction of the rotating magnetic field at each position of the detection circuits 30 and 40 is substantially the same. Further, as described above, the direction of the rotating magnetic field at the position where the second detection unit 112 (detection circuits 30 and 40) detects the rotating magnetic field is shifted by 90 ° with respect to the direction DM of the rotating magnetic field at the reference position PR. Have a certain relationship. Accordingly, the detection circuits 30 and 40 detect a rotating magnetic field in a direction shifted by 90 ° with respect to the direction DM of the rotating magnetic field at the reference position PR. Thereby, the detection circuits 30 and 40 generate the third signal S3 and the fourth signal S4, respectively, having a correspondence relationship with the angle θ formed by the direction DM of the rotating magnetic field at the reference position PR with respect to the reference direction DR. be able to.

  The phases of the third and fourth signals S3 and S4 are different from the phases of the first and second signals S1 and S2. In the present embodiment, in particular, the phases of the third and fourth signals S3 and S4 differ from the phases of the first and second signals S1 and S2 by 90 °.

  In the present embodiment, at least one of the first and second MR elements has the first MR element so that the variation of the first signal S1 and the second signal S2 due to the first magnetic anisotropy is different from each other. A magnetic anisotropy of 1 is set. The first magnetic anisotropy may be set in at least the second MR element of the first and second MR elements. In the present embodiment, in particular, the first magnetic anisotropy is set in both the first and second MR elements. However, the anisotropic magnetic field due to the first magnetic anisotropy set for the second MR element is larger than the anisotropic magnetic field due to the first magnetic anisotropy set for the first MR element. As a result, the variations of the first signal S1 and the second signal S2 due to the first magnetic anisotropy are different from each other.

  In the present embodiment, as shown in FIG. 11, the first magnetic anisotropy is set by the shape magnetic anisotropy of the magnetic layer (free layer) included in the first and second MR elements. ing. In other words, in the present embodiment, the MR film in each of the first and second MR elements has an elliptic cylinder shape, so that the planar shape (symbol 11) of the magnetic layer included in the first MR element and the first MR element are the same. The planar shape (symbol 21) of the magnetic layer included in the MR element 2 is an ellipse whose major axis is in the Z direction. However, the ratio of the major axis to the minor axis of the ellipse is larger in the second MR element than in the first MR element.

  The waveform of the second signal S2 is similar to the waveform of the first signal S1. However, due to the difference in the magnitude of the anisotropic magnetic field due to the first magnetic anisotropy, the waveform of the second signal S2 is slightly different from the waveform of the first signal S1. In this way, the variations caused by the first magnetic anisotropy in the first signal S1 and the second signal S2 are different from each other.

  In the present embodiment, at least one of the third and fourth MR elements is different so that the third signal S3 and the fourth signal S4 have different variations caused by the third magnetic anisotropy. The third magnetic anisotropy is set. The third magnetic anisotropy may be set in at least the fourth MR element of the third and fourth MR elements. In the present embodiment, in particular, the third magnetic anisotropy is set in both the third and fourth MR elements. However, the anisotropic magnetic field due to the third magnetic anisotropy set for the fourth MR element is larger than the anisotropic magnetic field due to the third magnetic anisotropy set for the third MR element. As a result, the modes of variation caused by the third magnetic anisotropy in the third signal S3 and the fourth signal S4 are different from each other.

  In the present embodiment, as shown in FIG. 11, the third magnetic anisotropy is set by the shape magnetic anisotropy of the magnetic layer (free layer) included in the third and fourth MR elements. ing. In other words, in the present embodiment, the MR film shape of each of the third and fourth MR elements is an elliptic cylinder, so that the planar shape (reference numeral 31) of the magnetic layer included in the third MR element and the The planar shape (reference numeral 41) of the magnetic layer included in the MR element 4 is an ellipse whose major axis is in the Z direction. However, the ratio of the major axis to the minor axis of the ellipse is larger in the fourth MR element than in the third MR element.

  The waveform of the fourth signal S4 is similar to the waveform of the third signal S3. However, due to the difference in the magnitude of the anisotropic magnetic field due to the third magnetic anisotropy, the waveform of the fourth signal S4 is slightly different from the waveform of the third signal S3. In this way, the variations of the third signal S3 and the fourth signal S4 due to the third magnetic anisotropy are different from each other.

  Note that the shape of the MR film in the first to fourth MR elements is not limited to the elliptical columnar shape, and may be a prismatic shape having a rectangular upper surface, for example.

  In the first and second MR elements, a second magnetic anisotropy different from the first magnetic anisotropy occurs, for example, later. The second magnetic anisotropy is, for example, due to induced magnetic anisotropy. This second magnetic anisotropy is, for example, when the temperature of the first and second MR elements drops from a high temperature while an external magnetic field in a specific direction is applied to the first and second MR elements. Arise. The second magnetic anisotropy is, for example, that the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 does not change, and a magnetic field in a certain direction generated by the magnetic scale 120 is applied to the first and second MR elements. It may occur when the temperature of the first and second MR elements drops from a high temperature while being applied.

  Further, in the third and fourth MR elements, for example, a fourth magnetic anisotropy different from the third magnetic anisotropy is acquired. Similar to the second magnetic anisotropy, the fourth magnetic anisotropy is caused by, for example, induced magnetic anisotropy. This fourth magnetic anisotropy is, for example, when the temperature of the third and fourth MR elements drops from a high temperature while an external magnetic field in a specific direction is applied to the third and fourth MR elements. Arise. In the fourth magnetic anisotropy, for example, the relative magnetic field of the magnetic scale 120 and the rotating magnetic field sensor 101 does not change, and a magnetic field in a certain direction generated by the magnetic scale 120 is applied to the third and fourth MR elements. It may occur when the temperature of the third and fourth MR elements drops from a high temperature while being applied.

  In the present embodiment, as described above, the third and fourth MR elements are arranged at a position shifted by ¼ pitch with respect to the first and second MR elements in the direction T. . Therefore, the second magnetic anisotropy and the fourth magnetic anisotropy may be different from each other. For example, when the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 does not change, the magnetic field applied to the first and second MR elements from the magnetic scale 120 and the third and fourth from the magnetic scale 120 The direction and magnitude of the magnetic field applied to the MR element are different. Therefore, for example, both the second magnetic anisotropy and the fourth magnetic anisotropy are magnetic fields generated by the magnetic scale 120 when the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 does not change. In the case where it is caused, the second magnetic anisotropy and the fourth magnetic anisotropy are different from each other.

  The first arithmetic circuit 61 obtains first correction information for correcting an error that occurs in the detected value θs due to the second magnetic anisotropy. The configuration of the first arithmetic circuit 61 is the same as that of the first embodiment. Similar to the first embodiment, the first arithmetic circuit 61 uses the direction of the rotating magnetic field when the pair of the first signal S1 and the second signal S2 obtained at the same time is the first signal pair. 1st correction information is calculated | required based on the transition mode of the 1st signal pair obtained in the process in which it rotates in a predetermined range (for example, 360 degrees).

  The third arithmetic circuit 63 obtains second correction information for correcting an error that occurs in the detected value θs due to the fourth magnetic anisotropy. The configuration of the third arithmetic circuit 63 is the same as that of the first arithmetic circuit 61. The third arithmetic circuit 63 rotates the direction of the rotating magnetic field within a predetermined range (for example, 360 °) when the pair of the third signal S3 and the fourth signal S4 obtained at the same time is the second signal pair. 2nd correction information is calculated | required based on the mode of transition of the 2nd signal pair obtained in the process to perform.

  The second arithmetic circuit 62 calculates the corrected detection value θs by using the first signal S1, the first correction information, the third signal S3, and the second correction information. Hereinafter, the operation of the rotating field sensor 101 according to the present embodiment will be described in detail, including the operation of the first to third arithmetic circuits 61, 62, and 63. In the following description, it is assumed that the second and fourth magnetic anisotropies are caused by a magnetic field generated by the magnetic scale 120.

  In the present embodiment, in a state where the second magnetic anisotropy is not generated in the first MR element, the waveform of the first signal S1 is ideally a sine curve. Similarly, in the state where the fourth magnetic anisotropy is not generated in the third MR element, the waveform of the third signal S3 is ideally a sine curve. As shown in FIG. 11, in this embodiment, the planar shape (symbol 11) of the magnetic layer (free layer) included in the first MR element and the magnetic layer (free layer) included in the third MR element. ) In plan view (reference numeral 31) is an ellipse whose major axis is oriented in the Z direction. This is due to the following reason. In the present embodiment, when the free layers of the first and third MR elements do not have shape anisotropy, the magnetizations of the free layers of the first and third MR elements are components in the Y direction. Since it is hard to hold, it becomes easy to face in the X direction or the -X direction. Therefore, in this case, the waveform of the first signal S1 in the state where the second magnetic anisotropy is not generated in the first MR element and the fourth magnetic anisotropy are generated in the third MR element. The waveform of the third signal S3 in a state where the signal is not close approaches a rectangular wave from the sine curve. By making the shape of the free layer of the first and third MR elements, for example, an ellipse whose major axis is oriented in the Z direction, the magnetization of the free layers of the first and third MR elements is in the X direction or − It becomes difficult to face in the X direction, and the waveform of the first signal S1 in the state where the second magnetic anisotropy does not occur in the first MR element and the fourth magnetic anisotropy occurs in the third MR element. The waveform of the third signal S3 in a state where the signal is not present can be approximated to a sine curve.

  When the second magnetic anisotropy is acquired in the first MR element, the waveform of the first signal S1 is distorted from the sine curve. The first signal S1 whose waveform is distorted by the second magnetic anisotropy can be approximately expressed by a trigonometric function using a variable including an angular variation term based on the second magnetic anisotropy. Specifically, the first signal S1 can be approximately expressed by the following equation (5).

  S1 = cos [θ-Asin {2 (θ-α)}] (5)

  In the above equation (5), Asin {2 (θ−α)} is an angular variation term based on the second magnetic anisotropy. In this angular variation term, A represents amplitude (maximum value of angular variation), and α represents a phase difference with respect to θ.

  When the second magnetic anisotropy is acquired in the second MR element, the waveform of the second signal S2 is distorted from the sine curve due to the first and second magnetic anisotropies. The second signal S2 distorted due to the first and second magnetic anisotropies is approximately an angle variation term based on the first magnetic anisotropy and an angle based on the second magnetic anisotropy. It can be expressed by a trigonometric function using a variable including a fluctuation term. Specifically, the second signal S2 can be approximately expressed by the following equation (6).

  S2 = cos [θ-Asin {2 (θ−α)} − Bsin {2 (θ−β)}] (6)

  In the above equation (6), B sin (2θ) is an angular variation term based on the first magnetic anisotropy. In this angular variation term, B represents amplitude (maximum value of angular variation), and β represents a phase difference with respect to θ. Since the first magnetic anisotropy can be set arbitrarily, the values of B and β can also be set arbitrarily.

  The phase of the third signal S3 differs from the phase of the first signal S1 by 90 °. When the fourth magnetic anisotropy is acquired in the third MR element, the waveform of the third signal S3 is distorted from the sine curve. The third signal S3 whose waveform is distorted by the fourth magnetic anisotropy can be approximately expressed by a trigonometric function using a variable including an angle variation term based on the fourth magnetic anisotropy. Specifically, the third signal S3 can be approximately expressed by the following equation (7).

  S3 = cos [(θ−90 °) −Csin {2 (θ−90 °) −γ}] (7)

  In the above equation (7), Csin {2 (θ−90 °) −γ} is an angular variation term based on the fourth magnetic anisotropy. In this angular variation term, C represents amplitude (maximum value of angular variation), and γ represents a phase difference with respect to θ.

  When the fourth magnetic anisotropy is acquired in the fourth MR element, the waveform of the fourth signal S4 is distorted from the sine curve due to the third and fourth magnetic anisotropies. The fourth signal S4 distorted due to the third and fourth magnetic anisotropies is approximately an angular variation term based on the third magnetic anisotropy and an angle based on the fourth magnetic anisotropy. It can be expressed by a trigonometric function using a variable including a fluctuation term. Specifically, the fourth signal S4 can be approximately expressed by the following equation (8).

  S4 = cos [(θ−90 °) −Csin {2 (θ−90 °) −γ} −Dsin {2 (θ−90 °) −δ}] (8)

  In the above equation (8), Dsin {2 (θ−90 °) −δ} is an angular variation term based on the third magnetic anisotropy. In this angular variation term, D represents amplitude (maximum value of angular variation), and δ represents a phase difference with respect to θ. Since the third magnetic anisotropy can be set arbitrarily, the values of D and δ can also be set arbitrarily.

  The first arithmetic circuit 61 operates in the same manner as the first arithmetic circuit 61 in the first embodiment, and based on the transition state of the first signal pair, the first correction information (A, α) Ask for. The third arithmetic circuit 63 operates in the same manner as the first arithmetic circuit 61 in the first embodiment, and based on the transition state of the second signal pair, the second correction information (C, γ) Ask for.

The second arithmetic circuit 62 uses the first signal S1, the first correction information (A, α), the third signal S3, and the second correction information (C, γ) to correct the detected value. θs is calculated. Specifically, the second arithmetic circuit 62 calculates the corrected detection value θs by the following method, for example. First, the second arithmetic circuit 62 calculates the corrected first signal using the first signal S1 and the correction information (A, α). The corrected first signal can be the calculated value S1 _n of the first signal S1 described in the first embodiment. Similarly, the second arithmetic circuit 62 calculates a corrected third signal S3 _n using the third signal S3 and the correction information (C, γ). Then, the second arithmetic circuit 62 calculates the corrected detection value θs from the corrected first and third signals S1 _n and S3 _n by the above equation (4).

  As described above, according to the present embodiment, the second MR anisotropy is acquired in the first MR element and the fourth magnetic anisotropy is acquired in the third MR element. Even if it occurs, it is possible to reduce the error that occurs in the detected value θs due to the second and fourth magnetic anisotropies.

  In the present embodiment, the detection circuits 10, 20, 30, and 40 may be arranged so that the direction perpendicular to the surfaces of the plurality of layers constituting the MR element intersects the XY plane. In this case, when the relative positional relationship between the magnetic scale 120 and the rotating magnetic field sensor 101 changes in the direction T, the magnetization direction of the free layer rotates. In this case, the reference plane PL may be a plane parallel to the surfaces of the plurality of layers constituting the MR element. Further, the magnetization direction of the magnetization fixed layer in the plurality of MR elements in the detection circuits 10 and 20 is changed to a direction orthogonal to the X direction, and the direction perpendicular to the planes of the plurality of layers constituting the MR element The detection circuits 10, 20, 30, and 40 may be arranged at the same position so as to cross the XY plane. In this case, the phases of the third and fourth signals S3 and S4 are set to the phases of the first and second signals S1 and S2 while the detection circuits 10, 20, 30, and 40 are arranged at the same position. Can be different by 90 °.

  Other configurations, operations, and effects in the present embodiment are the same as those in the first embodiment.

  In addition, this invention is not limited to said each embodiment, A various change is possible. For example, the magnetic detection element in the present invention is not limited to a spin valve type MR element (GMR element, TMR element), and may be any element that can have magnetic anisotropy in some form. For example, an AMR (anisotropic magnetoresistive effect) element may be used as the magnetic detection element. The first and third magnetic anisotropies are not limited to shape magnetic anisotropy, and may be set by crystal magnetic anisotropy or stress magnetic anisotropy.

  DESCRIPTION OF SYMBOLS 1 ... Rotary magnetic field sensor, 10 ... 1st detection circuit, 20 ... 2nd detection circuit, 30 ... 3rd detection circuit, 14, 24, 34 ... Wheatstone bridge circuit, 61 ... 1st arithmetic circuit, 61A ... Signal pair transition acquisition unit, 61B ... identification calculation unit, 61C ... identification dictionary, 62 ... second calculation circuit.

Claims (10)

A rotating field sensor that generates a detection value having a correspondence relationship with an angle formed by a direction of a rotating magnetic field at a reference position with respect to the reference direction, and the direction of the rotating magnetic field at the reference position rotates when viewed from the rotating field sensor Is what
A first detection circuit that includes a first magnetic detection element and generates a first signal having a correspondence relationship with an angle formed by a direction of the rotating magnetic field at the reference position with respect to the reference direction;
A second detection circuit that includes a second magnetic detection element and generates a second signal having a correspondence relationship with an angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction;
A first arithmetic circuit;
A second arithmetic circuit,
The first magnetic anisotropy is applied to at least one of the first and second magnetic detection elements so that variations of the first signal and the second signal due to the first magnetic anisotropy are different from each other. Is set,
The first arithmetic circuit obtains correction information for correcting an error generated in the detection value due to the second magnetic anisotropy generated in the first magnetic detection element. When the pair of the first signal and the second signal obtained at time is a signal pair, based on the transition state of the signal pair obtained in the process in which the direction of the rotating magnetic field rotates within a predetermined range, Find correction information,
The rotating magnetic field sensor, wherein the second arithmetic circuit calculates a corrected detection value using the first signal and the correction information.   2. The rotating field sensor according to claim 1, wherein the first magnetic anisotropy is set in at least a second magnetic detection element of the first and second magnetic detection elements. The second magnetic detection element includes a magnetic layer whose direction of magnetization changes according to the direction of the rotating magnetic field,
The rotating magnetic field sensor according to claim 2, wherein the first magnetic anisotropy is set by a shape magnetic anisotropy of the magnetic layer. The second magnetic detection element is disposed between a magnetization fixed layer whose magnetization direction is fixed, a free layer whose magnetization direction changes according to the direction of the rotating magnetic field, and the magnetization fixed layer and the free layer. A non-magnetic layer,
The rotating magnetic field sensor according to claim 2, wherein the first magnetic anisotropy is set by a shape magnetic anisotropy of the free layer.   5. The rotating field sensor according to claim 4, wherein the easy axis direction of the free layer is not parallel to or orthogonal to the magnetization direction of the fixed magnetization layer.   6. The rotating magnetic field according to claim 1, wherein the first arithmetic circuit represents the signal pair by coordinates in an orthogonal coordinate system, and represents transition of the signal pair by two-dimensional pattern information. Sensor.   The first arithmetic circuit holds information on a correspondence relationship between the two-dimensional pattern information and the correction information, and obtains correction information corresponding to the two-dimensional pattern information using pattern recognition. The rotating magnetic field sensor according to claim 6.   When the angle formed by the direction of the rotating magnetic field at the reference position with respect to the reference direction is θ and the correction information is A and α, the first signal is θ−Asin {2 (θ−α). The rotating magnetic field sensor according to claim 1, wherein the rotating magnetic field sensor is represented by a trigonometric function having a variable as a variable. The rotating magnetic field sensor further includes a third detection circuit,
The third detection circuit includes a third magnetic detection element, and generates a third signal having a correspondence relationship with an angle formed by a direction of the rotating magnetic field at the reference position with respect to the reference direction,
The phase of the third signal is different from the phase of the first signal,
9. The method according to claim 1, wherein the second arithmetic circuit calculates the corrected detection value using the third signal in addition to the first signal and the correction information. A rotating magnetic field sensor according to claim 1. The rotating magnetic field sensor further includes a third detection circuit, a fourth detection circuit, and a third arithmetic circuit,
The third detection circuit includes a third magnetic detection element, and generates a third signal having a correspondence relationship with an angle formed by a direction of the rotating magnetic field at the reference position with respect to the reference direction,
The fourth detection circuit includes a fourth magnetic detection element, and generates a fourth signal having a correspondence relationship with an angle formed by a direction of the rotating magnetic field at the reference position with respect to the reference direction,
The phase of the third signal is different from the phase of the first signal,
A third magnetic anisotropy is applied to at least one of the third and fourth magnetic sensing elements so that variations of the third signal and the fourth signal due to the third magnetic anisotropy are different from each other. Is set,
The third arithmetic circuit obtains second correction information for correcting an error generated in the detection value due to the fourth magnetic anisotropy generated in the third magnetic detection element. When the pair of the third signal and the fourth signal obtained at the same time is a second signal pair, the second signal pair obtained in the process in which the direction of the rotating magnetic field rotates within a predetermined range. The second correction information is obtained based on the transition mode of
The second arithmetic circuit calculates the corrected detection value by using the third signal and second correction information in addition to the first signal and the correction information. Item 5. The rotating field sensor according to any one of Items 1 to 4.

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