JP5181507B2 - Method for manufacturing photoelectric conversion element - Google Patents

Description

  The present invention relates to a method for producing a photoelectric conversion element suitable for use in a dye-sensitized solar cell.

  For example, photoelectric conversion elements such as solar cells are highly expected as clean energy sources, and pn junction solar cells using silicon semiconductor pn junctions have already been put into practical use. However, such a silicon-based solar cell uses a high-purity material as a raw material, or requires a high-temperature process or a vacuum process of about 1000 ° C., so that a reduction in manufacturing cost has been a major issue.

  Under such circumstances, in recent years, wet solar cells that perform charge separation by a potential gradient generated at a solid-liquid interface without relatively requiring high-purity materials and high-energy processes have been attracting attention. In particular, by absorbing a light-absorbing dye on the surface of the semiconductor electrode and absorbing the visible light having a wavelength longer than the band gap of the semiconductor electrode with the dye, how much of the irradiated light energy is converted into electrical energy. Research on so-called dye-sensitized photoelectric conversion elements that aim to improve the photoelectric conversion efficiency is actively conducted.

  The dye-sensitized solar cell proposed by Gretzell et al. In 1991 has been attracting attention because it operates by a mechanism different from a pn junction of a silicon semiconductor and exhibits high photoelectric conversion efficiency. The dye-sensitized solar cell realizes photoelectric conversion by injecting excited electrons generated by a dye that collects light into a semiconductor. Therefore, it is important to support a large amount of a sensitizing dye on a semiconductor in order to increase the light collecting ability, and to inject electrons from the sensitizing dye into the semiconductor as soon as possible. This new dye-sensitized solar cell, also referred to as a Gretzel cell, solves this problem by supporting a Ru film that is a sensitizing dye on a porous film made of ultrafine titanium oxide (for example, a non-colored cell). (See Patent Document 1).

A porous film made of titanium oxide can be produced by a sol-gel method. The porosity of the membrane is about 50%, and a nanoporous structure having a very large internal surface area is formed. For example, if the film thickness is 8 μm, the roughness factor (ratio of the actual area inside the porous to the substrate area) reaches about 720. When this surface is geometrically calculated, the amount of sensitizing dye supported reaches 1.2 × 10 ⁻⁷ mol / cm ³ , and about 98% of incident light is actually absorbed at the maximum absorption wavelength. Become.

As a Ru complex, Gretzell et al. Developed a bis (bipyridyl) Ru (II) complex. The Ru complex has a structure of the general formula cis-X ₂ bis (2,2′-bipyridyl-4,4′-dicarboxylate) Ru (II). X is Cl-, CN-, SCN- or the like. These have been systematically studied for fluorescence, visible light absorption, electrochemical and photoredox behavior, and of these, cis- (diisocyanate) -bis (2,2′-bipyridyl-4,4). '-Dicarboxylate) Ru (II) has been shown to have significantly better performance as a solar absorber and dye sensitizer.

  The visible light absorption of this Ru complex is a charge transfer transition from Ru as a metal atom to a carboxyl group as a ligand. In addition, the carboxyl group is directly coordinated to the Ti atom of titanium oxide on which the Ru complex is supported, thereby forming an intimate electronic contact between the dye sensitizer and the titanium oxide. Due to this electronic contact, electron injection from the Ru complex into the conduction band of titanium oxide occurred at an extremely fast rate of 1 picosecond or less, and was injected into the conduction band of titanium oxide by the oxidized Ru complex in the opposite direction. Electron recapture is thought to occur on the order of microseconds. This speed difference creates the directionality of the photoexcited electrons and performs charge separation with extremely high efficiency. This is a difference from a pn-junction type solar cell that performs charge separation by the potential gradient of the pn junction surface, and is an essential feature of a Gretzel cell.

  By the way, the structure of the dye-sensitized photoelectric conversion element is a so-called sandwich structure in which a substance such as an electrolyte solution is sandwiched between two electrodes, and in that sense, is similar to the structure of a liquid crystal element. As a method for producing a dye-sensitized photoelectric conversion element, generally, semiconductor fine particles such as titanium oxide are applied and baked on a substrate such as glass on which a transparent conductive layer is formed, and a sensitizing dye is applied to the surface of the fine particles. A first electrode is formed by supporting the first electrode and a second electrode in which platinum or carbon is fixed on a substrate such as glass on which a transparent conductive layer is similarly formed. Examples of the method include bonding with a resin or a UV curable resin, injecting an electrolyte solution between the electrodes, and finally closing the injection port. Therefore, the dye-sensitized photoelectric conversion element can be manufactured with a simple apparatus.

  However, although the photoelectric conversion efficiency has been dramatically improved, there has been a problem that variations in device performance, such as battery characteristics and durability, occur.

Therefore, for example, in Patent Document 1, after the dye-sensitized photoelectric conversion element is assembled, an aging process with heating is performed to improve the performance of the element and the variation in performance between elements.
Gratzel, 1 other, “Nature” (UK), Oct. 24, 1991, volume 353, p. 737-740 JP 2001-93588 A

  However, in the method described in Patent Document 1, it is necessary to perform an aging treatment at a temperature lower than the temperature at which the resin-based sealing material is thermally deteriorated in order to prevent deterioration of the element. Further, depending on the conditions of the aging treatment, the sealing structure may be destroyed and the element may be deteriorated.

  The present invention has been made in view of the above-described problem, and even if an aging treatment involving heating at a high temperature is performed, the sealing structure is not destroyed and the photoelectric conversion element capable of preventing deterioration of the element can be prevented. An object is to provide a manufacturing method.

In order to solve the above problems, a method for producing a photoelectric conversion device according to claim 1 includes a first substrate including a first electrode having a semiconductor layer carrying a sensitizing dye, and a first electrode. A second substrate having a second electrode facing the semiconductor layer; a charge transport layer formed between the first electrode and the second electrode; and formed around the charge transport layer, And a sealing portion that holds a charge transport layer between the second electrode and the second electrode, wherein the liquid crystal is in a liquid state between the first electrode and the second electrode. Step A for supplying the charge transport material to produce the charge transport layer, Step B for heating the charge transport layer at a temperature of 50 ° C. or higher and 200 ° C. or lower for 0.5 hours to 200 hours , And c) sealing the transport layer.

  ADVANTAGE OF THE INVENTION According to this invention, even if it performs the aging process accompanied by the heating at high temperature, the sealing structure is not destroyed and the manufacturing method of the photoelectric conversion element which can prevent deterioration of an element can be provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the present invention may be described with specific examples, but the present invention is not limited to the following specific examples.

  FIG. 1 is a schematic cross-sectional view illustrating an example of a photoelectric conversion element. As shown in FIG. 1, the photoelectric conversion element 1 was formed on a substrate 3 (referred to as a first substrate), an electrode 5 formed on one surface of the substrate 3, and a substrate 3. A semiconductor layer 7 formed on the electrode 5 and carrying a sensitizing dye (the electrode 6 composed of the electrode 5 and the semiconductor layer 7 is a first electrode) and a substrate 9 facing the semiconductor layer 7 ( A second substrate), a counter electrode 11 (formed as a second electrode) formed on one surface of the substrate 9, and a charge transport layer 13 formed between the electrode 6 and the counter electrode 11. And a sealing portion 15 formed between the electrode 6 and the counter electrode 11 and around the charge transport layer 13 is a basic configuration.

  Hereinafter, each component requirement is explained in full detail.

  The substrate 3 is made of glass or a film. From the viewpoint of durability of the substrate 3, it is preferable to use glass, but this is not a limitation.

  The electrode 5 functions as the negative electrode of the photoelectric conversion element 1.

  The electrode 5 is formed of a metal itself or is formed by laminating a conductive material layer on a film. Preferred conductive materials include metals such as platinum, gold, silver, copper, aluminum, rhodium, indium, etc., or carbon or conductive metal oxides such as indium-tin composite oxide, tin oxide doped with antimony , Fluorine-doped tin oxide or the like, or a composite of the above compound or a material obtained by coating silicon oxide, tin oxide, titanium oxide, zirconium oxide, aluminum oxide or the like on the above compound.

  The electrode 5 is better as the surface resistance is lower. The surface resistance is preferably 200Ω / □ or less, and more preferably 50Ω / □ or less. The lower limit is not particularly limited, but is usually 0.1Ω / □.

  The electrode 5 is better as the light transmittance is higher. A preferable light transmittance range is 50% or more, and more preferably 80% or more.

  The film thickness of the electrode 5 is preferably 0.1 to 10 μm. This is because within this range, an electrode film having a uniform thickness can be formed, and light transmittance is not lowered, and sufficient light can be incident on the semiconductor layer 7. When the transparent electrode 5 is used, light is preferably incident from the electrode 5 on the side where the semiconductor layer 7 carrying the sensitizing dye is deposited.

  The semiconductor layer 7 is formed by applying a mixed solution of semiconductor particles and a binder to the electrode 5 by a known and conventional method, for example, a coating method using a doctor blade or a bar coater, a spray method, a dip coating method, a screen printing method, a spin coating method, or the like. If it is a glass substrate, it can be heated and fired at around 500 ° C., and if it is a film substrate, it can be formed by applying pressure with a press.

Semiconductor materials include metal elements such as Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, Si, and Cr. oxides, SrTiO _3, perovskites such as _{CaTiO 3, CdS, ZnS, in} 2 S 3, PbS, Mo 2 S, sulfides such as _{WS 2, Sb 2 S 3,} Bi 2 S 3, ZnCdS 2, Cu 2 S Metal, chalcogenides such as CdSe, In ₂ Se ₃ , WSe ₂ , HgS, PbSe, CdTe, GaAs, Si, Se, Cd ₂ P ₃ , Zn ₂ P ₃ , InP, AgBr, PbI ₂ , HgI ₂ , BiI ₃ A semiconductor material such as CdS / TiO ₂ , CdS / AgI, Ag ₂ S / AgI, CdS / ZnO, CdS / HgS, a composite containing at least one selected from the semiconductor materials CdS / PbS, ZnO / ZnS, ZnO / ZnSe, CdS / HgS, CdS x / CdSe 1 - x, CdS x / Te 1 - x, CdSe x / Te 1 - x, ZnS / CdSe, ZnSe / CdSe, CdS / ZnS, TiO ₂ / Cd ₃ P ₂ , CdS / CdSeCd _y Zn _{1 -y} S, CdS / HgS / CdS and the like can be mentioned. Among these, in the Gretzel cell, titanium oxide is preferable in that it avoids photodissolution in the charge transport layer 13 and exhibits high photoelectric conversion characteristics.

  In general, the particle diameter of the semiconductor particles in the semiconductor layer 7 is preferably 5 to 1000 nm. Within this range, the pore diameter of the semiconductor layer 7 becomes an appropriate pore diameter, and the electrolyte constituting the charge transport layer 13 can sufficiently penetrate into the semiconductor layer 7 to obtain excellent photoelectric conversion characteristics. Because. The particle size of the semiconductor particles is particularly preferably 10 to 100 nm.

  The film thickness of the semiconductor layer 7 is preferably 0.1 to 100 μm. This is because, within this range, a sufficient photoelectric conversion effect can be obtained, and the transparency to visible light and near infrared light is not deteriorated. The film thickness of the semiconductor layer 7 is more preferably 1 to 50 μm, particularly preferably 5 to 30 μm, and most preferably 10 to 20 μm.

As the sensitizing dye, any dye that is commonly used in conventional dye-sensitized photoelectric conversion elements can be used. Such dyes are, for example, RuL ₂ (H ₂ O) ₂ type ruthenium-cis-diaqua-bipyridyl complexes, or ruthenium-tris (RuL ₃ ), ruthenium-bis (RuL ₂ ), osnium-tris (OsL _3). ), Osnium-bis (OsL ₂ ) type transition metal complexes, or zinc-tetra (4-carboxyphenyl) porphyrin, iron-hexocyanide complex, phthalocyanine, and the like. Also, 9-phenylxanthene dyes, coumarin dyes, acridine dyes, triphenylmethane dyes, tetraphenylmethane dyes, quinone dyes, azo dyes, indigo dyes, cyanine dyes, merocyanine dyes, xanthenes Organic dyes such as system dyes can also be suitably used. Among these, ruthenium-bis (RuL ₂ ) derivatives are particularly preferable because they have a wide absorption spectrum in the visible light region.

  Examples of the method of supporting the sensitizing dye on the semiconductor layer 7 include a method of immersing the substrate 3 including the electrode 5 on which the semiconductor layer 7 is deposited in a solution in which the sensitizing dye is dissolved. Any solvent can be used as the solvent for the solution as long as it can dissolve the sensitizing dye, such as water, alcohol, toluene, and dimethylformamide. Further, when the substrate 3 provided with the electrode 5 having the semiconductor layer 7 deposited on the sensitizing dye solution is immersed for a certain period of time, it can be heated and refluxed or an ultrasonic wave can be applied. After the sensitizing dye is supported on the semiconductor layer 7, the sensitizing dye remaining on the semiconductor layer 7 without being supported is preferably removed by washing with alcohol or heating under reflux.

The amount of the sensitizing dye supported on the semiconductor particles may be 1 × 10 ⁻⁸ to 1 × 10 ⁻⁶ mol / cm ² , and particularly 0.1 × 10 ^{−7 to} 9.0 × 10 ⁻⁷ mol / cm ^2. it is preferable that the cm ^2. Within this range, the effect of improving the photoelectric conversion efficiency can be obtained economically and sufficiently.

  The substrate 9 can be made of the same material as the substrate 3. The translucency of the substrate 9 may be either transparent or opaque, but is preferably transparent in that light can be incident from the substrates on both sides. When a metal foil is used as the film of the substrate 3, it is preferable to use a light-transmitting material for the substrate 9.

  The counter electrode 11 functions as a positive electrode of the photoelectric conversion element 1 and can be formed in the same manner as the electrode 5 on the side where the semiconductor layer 7 carrying the sensitizing dye is deposited.

  As the counter electrode 11, it is preferable to use a material having a catalytic action to give electrons to the electrolyte reductant in order to efficiently act as the positive electrode of the photoelectric conversion element 1. Such materials include, for example, metals such as platinum, gold, silver, copper, aluminum, rhodium, and indium, or carbon materials such as graphite, carbon nanotubes, and carbon carrying platinum, or indium-tin composite oxide and antimony. Conductive metal oxides such as doped tin oxide and fluorine-doped tin oxide, or conductive polymers such as polyethylenedioxythiophene, polypyrrole, and polyaniline. Of these, platinum, graphite, polyethylenedioxythiophene and the like are particularly preferable. The substrate 9 on the side on which the counter electrode 11 is arranged can also have a transparent conductive film (not shown) on the surface to which the counter electrode 11 is attached. For example, the transparent conductive film can be formed from the same material as the electrode 5. In this case, it is preferable that the counter electrode 11 is also transparent. If the counter electrode 11 is also transparent, light may be irradiated from the counter electrode 11 side or from both sides. Such a configuration is effective when light irradiation from both the front and back surfaces of the photoelectric conversion element 1 is expected due to the influence of reflected light and the like.

  The charge transport layer 13 is formed by supplying a charge transport material, and the charge transport material is obtained by dissolving an electrolyte in a solvent as necessary.

The electrolyte is not particularly limited as long as it is a pair of redox constituents composed of an oxidant and a reductant, but is preferably a redox constituent that has the same charge. The redox-system constituent material in this specification means a pair of substances that reversibly exist in the form of an oxidant and a reductant in a redox reaction. In this case, iodine (I− / I ₃ −) is often used, but is not particularly limited.

  The solvent used for dissolving the electrolyte is preferably a compound having excellent ion conductivity capable of dissolving the redox constituent. As the solvent, either an aqueous solvent or an organic solvent can be used, but it is preferable to use an organic solvent in order to further stabilize the oxidation-reduction component. Examples of the organic solvent include carbonate compounds such as dimethyl carbonate, diethyl carbonate, methyl ethyl carbonate, ethylene carbonate, and propylene carbonate, ester compounds such as methyl acetate, methyl propionate, and γ-butyrolactone, diethyl ether, and 1,2-dimethoxyethane. , Ether compounds such as 1,3-dioxosilane, tetrahydrofuran, 2-methyl-tetrahydrofuran, heterocyclic compounds such as 3-methyl-2-oxazodilinone, 2-methylpyrrolidone, nitrile compounds such as acetonitrile, methoxyacetonitrile, propionitrile, Examples include aprotic polar compounds such as sulfolane, didimethyl sulfoxide, and dimethylformamide. These can be used alone or in combination of two or more. Among them, carbonate compounds such as ethylene carbonate and propylene carbonate, heterocyclic compounds such as γ-butyrolactone, 3-methyl-2-oxazodilinone and 2-methylpyrrolidone, acetonitrile, methoxyacetonitrile, propionitrile, 3-methoxypropyl Nitrile compounds such as pionitrile and valeric nitrile are preferred. If the heat treatment is performed in the heat-resistant container according to the method of the present invention, the heat treatment can be performed even with a solvent having a high vapor pressure, and the choice of solvent is widened.

  It can also be said that the use of an ionic liquid as the charge transport material is effective from the viewpoint of non-volatility and flame retardancy. In this case, all known ionic liquids can be used. For example, imidazolium-based, pyridine-based, alicyclic amine-based, aliphatic amine-based, azonium amine-based ionic liquid or EP-716288, WO 95 / 18456, Electrochemical Vol. 65, No. 11, page 923 (1997), J. MoI. Electrochem. Soc. 143, 10, 3099 (1996), Inorg. Chem. 35, 1168 (1996).

  Furthermore, when an electrolyte is used as the charge transport material, a gelled electrolyte or a polymer electrolyte can also be used. Examples of the gelling agent include a gelling agent obtained by a polymer, a polymer crosslinking reaction, a gelling agent based on a polyfunctional monomer that can be polymerized, and an oil gelling agent. Generally used gelling electrolytes and polymer electrolytes can be used, but vinylidene fluoride polymers such as polyvinylidene fluoride, acrylic acid polymers such as polyacrylic acid, and acrylonitrile such as polyacrylonitrile. Preferred are a polymer having a amide structure in the structure, a polyether polymer such as polyethylene oxide, and the like.

  The sealing unit 15 holds the charge transport layer 13 between the electrode 6 and the counter electrode 11.

  The material of the sealing part 15 will not be specifically limited if it is a well-known material. Examples of the material of the sealing portion 15 include silicone resin, polyolefin, butyl rubber, ethylene-vinyl acetate copolymer, ethylene / α-olefin copolymer, ethylene-methyl acrylate copolymer, and ethylene-ethyl acrylate copolymer. Polymer, ethylene-acrylic acid copolymer, ethylene-methacrylic acid copolymer, low density polyethylene, acrylic resin, silicone resin, ionomer resin, polystyrene, polyolefin, polydiene, polyester, polyurethane At least one selected from fluororesin-based and polyamide-based elastomers can be used, among which silicone resin, ionomer resin, epoxy resin, olefin resin, butyl rubber, fluorine-containing resin, etc. are used. Is preferred. Moreover, when using a nitrile-type solvent and a carbonate-type solvent as electrolyte solvent, it is preferable to use a silicone resin, ionomer resin, olefin resin, and thermosetting olefin resin with low compatibility with those solvents.

  Next, the manufacturing method of the photoelectric conversion element 1 is demonstrated.

  The manufacturing method of the photoelectric conversion element 1 includes a first substrate 3 including a first electrode 6 having a semiconductor layer 7 carrying a sensitizing dye, and a second substrate facing the semiconductor layer 7 of the first electrode 6. A second substrate 9 provided with an electrode 11, a charge transport layer 13 formed between the first electrode 6 and the second electrode 11, and a first electrode formed around the charge transport layer 13. 6 and a second electrode 11, and a sealing unit 15 that holds the charge transport layer 13 between the first electrode 6 and the second electrode 11. Step A for supplying the liquid charge transport material to produce the charge transport layer 13, Step B for heating the charge transport layer 13, Step C for sealing the charge transport layer 13 after Step B, including.

In step B, before step C, heating the charge transport layer 13 is simply performed by heating the product manufactured in step A in a sealed container such as a Teflon (registered trademark) container. Can do. The heating temperature is set to 50 ° C. or higher, and most preferably 80 ° C. or higher. The upper limit is not particularly limited as long as less thermal degradation temperature of the charge transport material, and less usually 200 degrees. The heating time should be determined in consideration of the temperature, but is usually preferably 0.5 hours to 200 hours. Since Step B is intended for aging treatment, it may be combined not only with heating but also with light irradiation, connection with an external circuit, physical impact such as vibration, etc. used in normal aging treatment. Also in this case, since the aging treatment condition does not adversely affect the sealing structure of the photoelectric conversion element 1, the electrode 6 and the counter electrode 11 and the charge transport material are not deteriorated by the aging treatment. You can improve your familiarity with.

  Further, if necessary, the charge transport material may be replaced after step B. In this case, it is premised that the effect of the aging treatment is not lost in the replacement step, but it is effective, for example, when the charge transport material is modified in the step B.

Hereinafter, the present invention will be described more specifically with reference to examples. The present invention is not limited to the following examples.
Example 1
First, a high-purity titanium oxide powder having an average primary particle diameter of 20 nm was dispersed in ethyl cellulose to prepare a screen printing paste. This was used as the first paste. Further, a high-purity titanium oxide powder having an average primary particle size of 20 nm and an average primary particle size of 400 nm was dispersed in ethyl cellulose to prepare a screen printing paste. This was used as the second paste.

Next, the first paste is applied onto a conductive glass substrate with a transparent electrode (manufactured by Asahi Glass Co., Ltd., fluorine-doped SnO ₂ , thickness 1 mm, surface resistance 10 Ω / □) and dried. The porous titanium oxide film having a thickness of 10 μm was formed on the transparent electrode by firing in air at 30 ° C. for 30 minutes. Then, the second paste is applied on the formed porous titanium oxide film and dried, and the obtained dried product is baked in the air at 500 ° C. for 30 minutes, on the porous titanium oxide film having a thickness of 10 μm. Further, a 4 μm porous titanium oxide film was formed. Thereafter, the substrate on which the porous titanium oxide film is formed is immersed in a sensitizing dye solution represented by [Ru (4,4′-dicarboxyl-2,2′-bipyridine) _2- (NCS) ₂ ]. Then, it was left to stand at room temperature in a dark place for 24 hours, and a dye adsorption treatment was performed to produce a transparent electrode with a glass substrate.

Further, platinum was formed on the upper surface of a conductive glass substrate with a transparent electrode (manufactured by Asahi Glass Co., Ltd., fluorine-doped SnO ₂ , surface resistance 10 Ω / □) by pyrolysis of chloroplatinic acid to produce a counter electrode with a glass substrate.

Then, a sealing portion is formed between the transparent electrode and the counter electrode so as to surround the porous titanium oxide film, leaving an injection port, and then a charge transport material is injected, and a Teflon (registered trademark) container And heated at 80 ° C. for 72 hours. Here, the charge transport material is 0.5 mol / dm ³ methyltripropylammonium iodide, 0.01 mol / dm ³ lithium iodide, 0.005 mol / dm ³ iodine, and 0.5 mol / dm ³ N. -Methyl-benzimidazole was dissolved in γ-butyrolactone.

  After heating, the inlet was sealed to produce a photoelectric conversion element.

  The produced photoelectric conversion element was irradiated with a stabilizing light source, current-voltage characteristics were measured, and battery characteristics (photoelectric conversion efficiency) of the photoelectric conversion elements were evaluated. In addition, the standard deviation of battery characteristics when 50 photoelectric conversion elements were produced was evaluated. Table 1 shows the heating conditions and the evaluation results.

(Example 2)
A photoelectric conversion element was produced and evaluated in the same manner as in Example 1 except that the heating condition was 120 ° C. for 1 hour.

Table 1 shows the heating conditions and the evaluation results.
(Comparative example)
An element was fabricated and evaluated in the same manner as in Example 1 except that the heating condition was not used.

  Table 1 shows the heating conditions and the evaluation results.

  From Table 1, it was found that the battery characteristics were improved and the standard deviation of the battery characteristics was reduced by performing the heat treatment.

  Therefore, since the charge transport material is sealed after performing the aging treatment with heating, the sealing structure is not destroyed even when the heating temperature is high, and the deterioration of the element is prevented. The variation of can be suppressed. According to the present invention, even when the optimum heating temperature exceeds the upper limit of the heat resistance temperature of the sealing material, the aging treatment with heating can be effectively performed.

It is a schematic sectional drawing which shows an example of a photoelectric conversion element.

Explanation of symbols

1 photoelectric conversion element 3 substrate (first substrate)
5 electrode 6 electrode (first electrode)
7 Semiconductor layer 9 Substrate (second substrate)
11 Counter electrode (second electrode)
13 Charge transport layer 15 Sealing part

Claims (1)

A first substrate comprising a first electrode having a semiconductor layer carrying a sensitizing dye;
A second substrate comprising a second electrode facing the semiconductor layer of the first electrode;
A charge transport layer formed between the first electrode and the second electrode;
A sealing portion formed around the charge transport layer and holding the charge transport layer between the first electrode and the second electrode;
A method for producing a photoelectric conversion element comprising:
Supplying a liquid charge transport material between the first electrode and the second electrode to produce the charge transport layer; and
Heating the charge transport layer at a temperature of 50 ° C. or higher and 200 ° C. or lower for 0.5 to 200 hours ;
After step B, sealing the charge transport layer, step C;
The manufacturing method of the photoelectric conversion element characterized by including.

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