JP5052031B2 - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a screen printing device controlling variation in printing film thickness generated by deflection of a squeegee at the time of screen printing and forming an even printing resin film and also a printing method using the printing device. <P>SOLUTION: The printing device is provided with: a printing stage for arranging objects to be printed; a means to adjust the height of the objects to be printed; the squeegee mounted above the printing stage; a head supporting the squeegee; and a cylinder on which the head is arranged. The squeegee is movable upward and downward by means of the cylinder on which the head is arranged, and the means to adjust the height of the objects to be printed bends the objects arranged over the printing stage. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

Description

  The present invention uses a screen printing apparatus and a screen printing apparatus for manufacturing a semiconductor device that wirelessly receives and transmits data, such as a wireless chip, a wireless tag, a wireless IC, an RFID, an IC tag, and an IC chip. The present invention relates to a printing method.

In recent years, development of semiconductor devices having a function of receiving and transmitting data wirelessly, such as a wireless chip, a wireless tag, a wireless IC, an RFID, an IC tag, and an IC chip, has been actively promoted. In such a semiconductor device, a thin film integrated circuit is generally sealed with a sealing resin, and a screen printing method is widely used in this process (for example, see Patent Document 1).
JP 2001-307054 A

  However, when printing the sealing resin on the thin film integrated circuit, depending on the size of the printing pattern, the squeegee is deformed according to the difference in thickness between the opening and the non-opening of the printing plate due to the squeegee pressing pressure, There has been a problem that the printed film thickness varies at the center and both ends of the pattern.

  In particular, when the printed pattern covers almost the entire substrate, there is no emulsion inside the printed pattern, so that the squeegee deflection cannot be suppressed and it is difficult to control the variation in the printed film thickness. It was.

  The present invention has been made paying attention to the above-mentioned problems, and provides a screen printing apparatus capable of suppressing a variation in printed film thickness caused by squeegee deflection during screen printing and forming a flat printed resin film. With the goal.

  In order to achieve the above object, a screen printing apparatus is a screen printing apparatus in which screen printing is performed by sliding a squeegee while a plate-like printed material is fixed to a printing stage. It is characterized by having a mechanism for maintaining a uniform distance between the substrate and the squeegee.

  Printing having a printing stage for arranging the substrate, means for adjusting the position of the substrate, a squeegee provided at the top of the printing stage, a head for supporting the squeegee, and a cylinder provided with the head In this apparatus, the squeegee can be moved up and down by a cylinder provided with a head, and the means for adjusting the position of the substrate can bend the substrate disposed on the printing stage. It is characterized by that.

  The means for adjusting the position of the substrate has a pin that can be moved up and down by a cylinder attached to the lower part of the printing stage.

  The printing stage is divided into a plurality of parts.

  The means for adjusting the position includes means for fixing the substrate.

  A printing apparatus comprising: a printing stage having a flexible surface; a squeegee provided on top of the printing stage having a flexible surface; a head that supports the squeegee; and a cylinder in which the head is disposed. The squeegee can be moved up and down by a cylinder provided with a head.

  A printing stage, a jig provided on the printing stage, a squeegee provided on an upper part of the jig and capable of bending the printing material by arranging the printing material, and a head supporting the squeegee, A squeegee is capable of moving up and down by a cylinder provided with a head.

  A printing apparatus having a printing stage, a squeegee provided at an upper part of the printing stage, and means for adjusting the pressing and pushing amount of the squeegee at the center and the end of the squeegee, and the squeegee is deformed by the adjusting means. It is possible to do this.

  A first substrate is placed on the printing stage, a screen printing plate is provided on the first substrate, a paste is applied on the screen printing plate, and a paste is applied on the first substrate via the screen printing plate. By pushing out with a squeegee, a paste is formed on the surface of the first substrate, the paste formed on the surface of the first substrate is cured to form a resin layer, and the thickness distribution of the resin layer is measured, The second substrate is placed on the stage, the position of the second substrate is adjusted according to the measurement result, the screen printing plate is provided on the second substrate, and the paste is applied on the screen printing plate. The paste is formed on the surface of the second substrate by pushing the paste onto the second substrate via a screen printing plate with a squeegee.

  In order to adjust the position of the second substrate, a pin that can be moved up and down by a cylinder attached to the lower part of the printing stage is used.

  In order to adjust the position of the second substrate, a jig is arranged on the upper part of the printing stage.

  The paste is baked to cure the paste.

  In order to cure the paste, the paste is irradiated with UV light.

  A substrate is placed on a printing stage having a flexible surface, a screen printing plate is provided on the substrate, a paste is applied on the screen printing plate, and the paste is applied to the substrate via the screen printing plate with a squeegee. A paste is formed on the surface of the first substrate by pushing out.

  Note that in this specification, a semiconductor device includes a wireless chip, a wireless tag, an electronic tag, an ID chip, an ID tag, an IC tag, an IC chip, an RF (Radio Frequency Identification) tag, an RFID (Radio Frequency Identification) tag, and the like. .

  By using the printing apparatus of the present invention, the distribution of the thickness of the printing resin in the printing pattern can be reduced, and a resin layer having a uniform thickness can be formed.

  In addition, by forming a resin layer with a uniform film thickness within the printed pattern, it is possible to produce a semiconductor device with little variation in characteristics such as flexibility, moisture absorption, and moisture resistance of products obtained from the same substrate. Thus, the reliability of the semiconductor device can be improved.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In the first embodiment, a printing apparatus having a unit that can control variation in a squeegee interval and a printed material generated by bending of the squeegee, and a printing method using the printing apparatus will be described. Specifically, a printing apparatus and a printing apparatus capable of adjusting the position (height) of the printing material on the printing stage by means of adjusting the position (height) of the printing material on the printing stage are used. Will be described. More specifically, a printing apparatus having a means for adjusting the position (height) of a printing material on the printing stage by arranging a plurality of pins on the printing stage and moving the pins up and down. The printing method used will be described with reference to FIGS.

  FIG. 1 schematically shows a screen printing apparatus of the present invention. 1A is a cross-sectional view of a plane parallel to the side surface of the screen printing apparatus of the present invention, and FIG. 1B is a cross-sectional view of a plane parallel to the front face of the screen printing apparatus.

  As shown in FIGS. 1A and 1B, the printing stage 1 has a plurality of pins 2, and the plurality of pins 2 are freely adjusted in height by a cylinder 3 attached to the lower part of the stage. be able to. The pin 2 is provided with a mechanism for fixing the substrate 7. Here, it is assumed that a vacuum suction hole is provided and the substrate 7 can be vacuum-sucked. As a result, the substrate 7 is fixed to the printing stage 1.

  A print head 5 that supports the squeegee 4 is disposed on the upper part of the print stage 1 by a cylinder 6. The print head 5 can be moved in the vertical direction by a cylinder 6 (see FIG. 1A).

  A method for forming a resin film using a screen printing plate having a mesh will be described with reference to FIGS. 2A and 3A are perspective views of a substrate having a pattern, and FIGS. 2B, 3B, and 3C are screen printing apparatuses for the substrate having a pattern. It is sectional drawing of a surface parallel to the side surface. 2A is a cross-sectional view taken along the line AB in FIG. 2A, and FIG. 3B is a cross-sectional view taken along the line AB in FIG.

  A screen printing plate 100 on which a mesh 104 and a mask emulsion 105 are fixed by a frame 103 is provided on a substrate 7 to be vacuum-sucked by the printing stage 1. Next, the paste 106 is placed on the screen printing plate 100, and the paste 106 is pushed out using the squeegee 4 (see FIGS. 2A and 2B). As a result, the paste 111 can be applied on the substrate 7. (See FIGS. 3A and 3B.) Note that the paste may be spread on the screen printing plate with a scraper before the paste 106 is pushed out with the squeegee 4.

  Note that a flexible substrate is used as the substrate 7. As the flexible substrate, a glass substrate, a quartz substrate, a substrate formed of an insulating material such as ceramic made of a material such as alumina, a plastic substrate, a silicon wafer, a metal plate, or the like can be used. In the case of using a glass substrate, a quartz substrate, a substrate made of an insulating material such as ceramic made of a material such as alumina, a silicon wafer, a metal plate, etc., a process for reducing the film thickness by a process such as grinding or polishing. It is sufficient to give flexibility by doing.

  Plastic substrates include PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyether sulfone), polypropylene, polypropylene sulfide, polycarbonate, polyether imide, polyphenylene sulfone, polyphenylene oxide, polyphthalamide, nylon, poly Examples thereof include a plastic substrate made of ether ether ketone, polysulfone, polyether imide, polyarylate, polybutylene terephthalate, polyimide, a substrate formed of an organic material in which inorganic particles having a diameter of several nm are dispersed, and the like. Here, a glass substrate is used as the substrate 7.

  The paste 106 can be appropriately selected and used according to the configuration of the film pattern to be formed. For example, an organic resin such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive can be used. Here, an epoxy resin is used as the paste 106.

  Next, the film pattern 131 can be formed by curing the applied paste 111 (see FIGS. 3A to 3C). Examples of the curing method include a method of baking after drying, a method of performing only baking, a method of irradiating with UV light, and the like. Here, the paste 111 is cured by drying and baking.

  A method for measuring the film thickness distribution of the film pattern 131 formed by using the above method will be described with reference to FIG. 4A is a side view of the patterned substrate, and FIGS. 4B and 4C are cross-sectional views of the patterned substrate. Note that FIG. 4B is a cross-sectional view taken along a line AB in FIG.

  Further, by using the means 9 for measuring the change amount of the film thickness and the means 10 for determining the measurement position, the film thickness distribution of the substrate 7 on which the film pattern 131 is formed can be measured (FIG. 4 ( (See A) and (B).) As the means 9 for measuring the amount of change in film thickness, a dial gauge, a laser displacement meter, a contact-type step measuring instrument, or the like can be used. In particular, since the laser displacement meter can be measured in a non-contact manner, the film thickness distribution can be measured without curing the printing resin, and the time for curing the printing resin can be omitted, which is preferable. . As the means 10 for determining the measurement position, a method of moving the printing material or a method of moving the measuring device may be used. Here, it is assumed that an XY stage is used as an apparatus for moving the substrate. Further, only one means 9 for measuring the amount of change may be used, or a plurality of measuring devices may be provided as shown in FIG.

  Next, a method for determining the heights of the plurality of pins 2 arranged on the printing stage 1 will be described with reference to FIGS. In FIG. 5, the height of the upper surface of all the pins 2 is made the same as the height of the upper surface of the printing stage 1, and a cross-sectional view taken along a plane perpendicular to the moving direction of the squeegee 4 during printing is shown. is there. On the other hand, FIG. 6 shows a cross-sectional view in a plane perpendicular to the moving direction of the squeegee 4 during printing by adjusting the height of the pin.

  First, in FIG. 5, when the paste 106 is extruded using the squeegee 4, the squeegee 4 is elastically deformed by the step due to the emulsion 105 for masking the screen printing plate 100 and the squeegee pressing (see FIG. 5A). As a result of the paste 106 being pushed out by the squeegee 4 in such a deformed state, a printed film having a large film thickness is formed at the periphery of the formed film pattern 121 and a thin film film is formed near the center (FIG. 5 ( See B).

  With respect to the film pattern 121 printed using the above method, the film thickness distribution is measured using the method shown in FIG. 4, and the height of the pin 2 attached to the printing stage 1 according to the measured film thickness distribution. Is adjusted to the optimum value, the distance between the squeegee 4 and the substrate 7 is set to an appropriate distance. As a result, the film thickness distribution of the printing resin 8 can be made uniform throughout the film pattern 121, and a film pattern 141 having no film thickness variation can be obtained (FIGS. 6A to 6B). reference.). The height of the pin 2 is preferably adjusted by the operator so as to be an optimum height corresponding to the printing pattern, printing plate specifications, printing resin, squeegee hardness, and the like.

  Using the above-described method, a resin film that suppresses variations in film thickness within the film pattern can be formed by performing screen printing with an appropriate deflection (curved) on the substrate. It becomes possible.

  In addition, since variation in film thickness can be suppressed by using the printing apparatus of the present invention, a semiconductor device with less variation in characteristics such as flexibility, moisture absorption, and moisture resistance of products obtained from the same substrate can be manufactured. It is possible and the reliability of the semiconductor device can be improved.

(Embodiment 2)
In the second embodiment, a printing apparatus having a structure different from that of the first embodiment and capable of controlling the variation in the interval between the printing object and the squeegee caused by the deflection of the squeegee and the printing method using the printing apparatus. explain. Specifically, a printing apparatus having a plurality of divided stages and capable of adjusting the height of a printing material for each position on the printing stage by moving each stage up and down, and a printing method using the printing apparatus This will be described with reference to FIG. 7A is a cross-sectional view of the printing stage, FIG. 7B is a cross-sectional view at the time of printing in the present embodiment, and FIG. 7C shows a film pattern (resin layer, resin film). ) 141 is a cross-sectional view of the substrate 7 on which 141 is formed.

  In FIG. 7, the printing stage is composed of a plurality of divided stages (a plurality of plates) consisting of 1a to 1e, and each divided stage (plate) is connected to pins 2a to 2e attached to the lower part of the stage. The cylinders 3a to 3e each have a mechanism for adjusting the height independently. Each of the stages 1a to 1e divided into a plurality of parts has a mechanism for fixing the substrate 7 such as a vacuum suction hole. The divided stage may be divided into two or more, and is not limited to the case of 5 divisions 1a to 1e as illustrated.

  The method for determining the height of each of the divided stages 1a to 1e may be the same method as in the first embodiment. At this time, the height of each of the divided stages 1a to 1e is appropriately adjusted by an operator so as to be an appropriate height in consideration of the printing pattern, the specifications of the printing plate, the printing resin, the hardness of the squeegee, and the like. Is preferred.

  By using the above method and performing screen printing while giving an appropriate deflection to the substrate, it is possible to form a resin film that suppresses variations in film thickness within the film pattern.

  In addition, since variation in film thickness can be suppressed by using the printing apparatus of the present invention, a semiconductor device with less variation in characteristics such as flexibility, moisture absorption, and moisture resistance of products obtained from the same substrate can be manufactured. It is possible and the reliability of the semiconductor device can be improved.

(Embodiment 3)
In the third embodiment, a printing apparatus and a printing apparatus that can control the variation in the distance between the printed material and the squeegee caused by the deflection of the squeegee using a method different from those of the first and second embodiments. A printing method will be described. Specifically, a printing apparatus using a fixed state without changing the shape of the printing stage and a printing method using the printing apparatus will be described with reference to FIG. 8A and 8C are cross-sectional views of the printing apparatus according to the present embodiment, and FIGS. 8B and 8D are cross-sectional views of the printed material and the paste after the film pattern is formed. Show.

  In FIG. 8A, the printing stage 1p is ground and polished near the center of the pattern. At this time, the height near the center and the end of the printing stage 1p is determined based on the optimum values determined in the first embodiment.

  Further, as another configuration of the third embodiment, as shown in FIG. 8C, a shape having a concave surface is produced on the printing stage 1 based on the optimum value of the height determined in the first embodiment. A jig 1q is installed. Although not shown, the jig or the printing stage has means for fixing the substrate.

  When the optimum value of the height of the pins arranged on the printing stage is determined according to the first embodiment, the optimum value of the height of the pins on the printing stage is reproduced by cutting the surface of the printing stage. As in the first embodiment, it is possible to form a resin film in which variation in film thickness within the film pattern is suppressed (see FIGS. 8A to 8B). Also, when there are a plurality of different conditions depending on the printing pattern, printing resin, etc., the stage replacement work time is obtained by using a jig 1q that reproduces the optimum value of the pin height of the printing stage for each condition. Can be omitted (see FIGS. 8C to 8D).

  Note that a printing method similar to that in the first embodiment can be used, and is omitted here.

  When printing is repeated under any conditions using this embodiment, there is no need to consider problems such as pin wear and cylinder degradation, so variations in film thickness within the film pattern can be suppressed over a long period of time. It is possible to form a resin film.

(Embodiment 4)
In the fourth embodiment, a printing apparatus and a printing method using the printing apparatus that can reduce variation in squeegee spacing using a method different from those in the first to third embodiments will be described. Specifically, by using a stage having a flexible surface, the stage surface is deformed in response to squeegee pressing, and the deformation of the stage surface can reduce variations in the distance between the printing material and the squeegee. A printing method using the apparatus and the printing apparatus will be described with reference to FIG.

  9A is a cross-sectional view of the printing stage in the present embodiment, FIG. 9B is a cross-sectional view at the time of printing in the present embodiment, and FIG. 9C is a view after the film pattern is formed. Sectional drawing of a stage, to-be-printed material, and paste is shown.

  In FIG. 9A, a flexible plate 1 r is provided on the surface of the printing stage 1. The printing stage 1 has means for fixing the substrate (not shown).

  When the flexible plate 1r is deformed by pressing the squeegee at the time of printing, it is possible to suppress variations in the film thickness of the film pattern 141 (see FIGS. 9B and 9C). . As a material of the flexible plate 1r, silicon rubber or the like can be used.

  As a printing method, a method similar to that in the first embodiment may be used, and thus the description is omitted here.

  By using the present embodiment, printing for determining the height of the stage as in the first embodiment is performed, and the process of determining the optimum value of the height of the stage is not performed. It is possible to form a resin film in which variations in film thickness are suppressed.

(Embodiment 5)
In the fifth embodiment, there is a means for adjusting the squeegee pressing and pushing amount at the center and both ends of the squeegee, and by keeping the distance between the printing material and the squeegee constant throughout the film pattern, a flat printed film can be formed. A printing method using a printing apparatus that can be formed will be described with reference to FIG. 10A shows a front view of the print head of the printing apparatus according to the present embodiment, FIG. 10B shows a front view of the printing apparatus according to the present embodiment during printing, and FIG. Sectional drawing of the to-be-printed material and paste after the film | membrane pattern formation produced using the printing method of this Embodiment is shown.

  In FIG. 10, the print head 5 is provided with a plurality of cylinders 5a to 5f, and the squeegee 4 can be deformed by the cylinders 5a to 5f (see FIG. 10A). By deforming the squeegee 4 so as to be parallel to the substrate 7 on the printing stage 1 by the cylinders 5a to 5f provided in the printing head 5, it becomes possible to suppress variations in film thickness (FIG. 10 ( (See B) and (C).) The printing stage 1 has means for fixing the substrate (not shown).

  As in the first embodiment, the displacement amount of the cylinder in the present embodiment is determined by performing printing for determining the height of the stage with an arbitrary variation amount and appropriately adjusting the variation amount. . It is preferable that the operator adjusts the appropriate amount of change so as to be optimal in accordance with the printing pattern, printing plate specifications, printing resin, squeegee hardness, and the like.

  By using this embodiment mode, it is possible to use a planar stage, such as a substrate having poor flexibility, such as a quartz substrate, a substrate formed of an insulating material such as ceramic such as alumina, a silicon wafer, a metal plate, or the like. On the other hand, it is possible to form a resin film that suppresses variations in film thickness within the film pattern.

(Embodiment 6)
In this embodiment, a method for manufacturing a semiconductor device will be described with reference to drawings. Here, a method for manufacturing a semiconductor device using the printing apparatus described in Embodiment 1 is described; however, the method for manufacturing a semiconductor device in this embodiment can be appropriately applied using the printing apparatus described in each embodiment. is there.

  As shown in FIG. 11A, an insulating layer 1101 and a separation layer 1102 are formed over one surface of a substrate 1100.

  As the substrate 1100, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating layer formed on one surface, or the like is used. Since there is no restriction on the size or shape of the substrate 1100 listed above, for example, if a substrate having a side of 1 meter or more and a rectangular shape is used as the substrate 1100, productivity is remarkably improved. Can do. This advantage is a great advantage compared to the case of using a circular silicon substrate.

  The layer including a plurality of transistors provided over the substrate 1100 is peeled off from the substrate 1100 later. Accordingly, a layer having a plurality of transistors may be newly formed over the substrate 1100 by reusing the substrate 1100. As a result, cost can be reduced. Note that a quartz substrate is preferably used as the substrate 1100 to be reused.

  The separation layer 1102 is formed after the insulating layer 1101 is formed over one surface of the substrate 1100. The release layer 1102 is formed by sputtering, plasma CVD, or the like using tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium ( An element selected from Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silicon (Si), or the element as a main component The layer made of the alloy material to be formed or the compound material containing the element as a main component is formed as a single layer or a stacked layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

  In the case where the separation layer 1102 has a single-layer structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is preferably formed. Alternatively, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

  In the case where the separation layer 1102 has a stacked structure, preferably, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed as a first layer, and tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as a second layer. An oxide, nitride, oxynitride, or nitride oxide is formed.

  In the case where a stacked structure of a layer containing tungsten and a layer containing an oxide of tungsten is formed as the separation layer 1102, a layer containing tungsten is formed, and a layer containing silicon oxide is formed thereover. The fact that a layer containing tungsten oxide is formed at the interface with the silicon oxide layer may be utilized. Further, the layer containing tungsten oxide may be formed by performing thermal oxidation treatment, oxygen plasma treatment, treatment with a strong oxidizing power such as ozone water, or the like on the surface of the layer containing tungsten. The same applies to the case where a layer containing tungsten nitride, oxynitride, and nitride oxide is formed. After a layer containing tungsten is formed, a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer are formed thereon. A layer may be formed.

The oxide of tungsten is represented by WOx. X is in the range of 2 to 3, when x is 2 (WO ₂ ), x is 2.5 (W ₂ O ₅ ), x is 2.75 (W ₄ O ₁₁ ), x Is 3 (WO ₃ ). In forming the tungsten oxide, the value of X mentioned above is not particularly limited, and may be determined based on the etching rate or the like. However, the layer having the best etching rate is a layer containing tungsten oxide (WOx, 0 <X <3) formed by a sputtering method in an oxygen atmosphere. Therefore, in order to shorten the manufacturing time, a layer containing a tungsten oxide is preferably formed as the separation layer by a sputtering method in an oxygen atmosphere.

  Further, according to the above process, the insulating layer 1101 is provided between the substrate 1100 and the peeling layer 1102, but the present invention is not limited to this process. The peeling layer 1102 may be formed so as to be in contact with the substrate 1100.

  Here, a glass substrate is used as the substrate 1100, a silicon oxynitride layer with a thickness of 100 nm is formed as the insulating layer 1101, and a tungsten layer with a thickness of 30 nm is formed as the separation layer 1102 by a sputtering method.

  Next, as illustrated in FIG. 11B, an insulating layer 1105 serving as a base is formed so as to cover the separation layer 1102. The insulating layer 1105 is formed as a single layer or a stacked layer including a silicon oxide or a silicon nitride by high density plasma, a sputtering method, a plasma CVD method, or the like. The silicon oxide material is a substance containing silicon (Si) and oxygen (O), and corresponds to silicon oxide, silicon oxynitride, silicon nitride oxide, or the like. The silicon nitride material is a substance containing silicon and nitrogen (N), and corresponds to silicon nitride, silicon oxynitride, silicon nitride oxide, or the like. The insulating layer serving as a base functions as a blocking film that prevents impurities from entering from the substrate 1100.

Note that the high-density plasma used here is excited by microwaves, has an electron temperature of 1.5 eV or less (preferably 0.5 to 1.5 eV), an ion energy of 5 eV or less, and an electron density of 1.0 × 10 6. It is a high density plasma which is about ¹¹ cm ^{−3 to} 1.0 × 10 ¹³ cm ⁻³ . Plasma generation can be performed using a microwave-excited plasma processing apparatus using a radial slot antenna. At this time, the surface of the silicon substrate can be nitrided by introducing a mixed gas of nitrogen (N ₂ ), or a nitride gas such as ammonia (NH ₃ ), nitrous oxide (N ₂ O), and a rare gas. In addition, when a mixed gas of oxygen (O ₂ ), hydrogen (H ₂ ), and a rare gas is introduced, an oxide film can be formed on the surface of the silicon substrate. Here, argon gas (Ar) is used as a rare gas. Note that krypton (Kr) may be used instead of argon gas. By using this high-density plasma, it is possible to produce a dense film with very little plasma damage. Further, since the low temperature treatment (typically 250 to 550 ° C.), the plasma oxidation treatment can be sufficiently performed even if the plasma treatment is performed. Note that a microwave (2.45 GHz) is used as a frequency for forming plasma. Further, the plasma potential is as low as 5 V or less, and excessive dissociation of source molecules can be suppressed.

  In addition, the insulator layer formed by this process may contain a rare gas used for high-density plasma.

  Here, a 200-nm-thick silicon oxide layer is formed by high-density plasma as the insulating layer 1105 serving as a base.

  Next, an amorphous semiconductor layer (eg, a layer containing amorphous silicon) is formed over the insulating layer 1105. Subsequently, the amorphous semiconductor layer is subjected to laser crystallization, thermal crystallization using an RTA or furnace annealing furnace, thermal crystallization using a metal element that promotes crystallization, and heat using a metal element that promotes crystallization. A crystalline semiconductor layer is formed by crystallization by a method combining a crystallization method and a laser crystallization method. After that, the obtained crystalline semiconductor layer is etched into a desired shape to form crystalline semiconductor layers 1127 to 1130.

  As a specific example of a manufacturing process of the crystalline semiconductor layers 1127 to 1130, first, an amorphous semiconductor layer having a thickness of 66 nm is formed by a plasma CVD method. Next, after a solution containing nickel, which is a metal element for promoting crystallization, is held on the amorphous semiconductor layer, the amorphous semiconductor layer is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor layer. After that, laser light is irradiated as necessary, and crystalline semiconductor layers 1127 to 1130 are formed using a photolithography method.

  Note that when the crystalline semiconductor layers 1127 to 1130 are formed by a laser crystallization method, a continuous wave or pulsed gas laser or solid laser is used.

  In addition, an amorphous semiconductor layer functioning as a gettering site may be formed over the crystalline semiconductor layer. Since the amorphous semiconductor layer serving as a gettering site needs to contain an impurity element such as phosphorus or argon, it is preferably formed by a sputtering method in which argon can be contained at a high concentration. After that, heat treatment (RTA method or thermal annealing using a furnace annealing furnace) is performed to diffuse the metal element in the amorphous semiconductor layer, and then the amorphous semiconductor layer containing the metal element is removed. To do. Then, the content of the metal element in the crystalline semiconductor layer can be reduced or removed.

  Next, a gate insulating layer covering the crystalline semiconductor layers 1127 to 1130 is formed. The gate insulating layer is formed as a single layer or a stack of layers containing silicon oxide or silicon nitride by high-density plasma, plasma CVD, sputtering, or the like.

  Here, a silicon oxynitride layer is formed by high-density plasma as the gate insulating layer.

  Next, a first conductive layer and a second conductive layer are stacked over the gate insulating layer. The first conductive layer is formed with a thickness of 20 to 100 nm by a plasma CVD method, a sputtering method, or the like. The second conductive layer is formed with a thickness of 100 to 400 nm. The first conductive layer and the second conductive layer include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used.

  An example of the combination of the first conductive layer and the second conductive layer is as follows: tantalum nitride (TaN) layer \ tungsten (W) layer, tungsten nitride (WN) layer \ tungsten layer, molybdenum nitride (MoN) layer \ A molybdenum (Mo) layer etc. are mentioned. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the formation of the first conductive layer and the second conductive layer.

  Here, a tantalum nitride layer having a thickness of 30 nm is formed as the first conductive layer, and a tungsten layer having a thickness of 370 nm is formed as the second conductive layer.

  Next, a mask made of a resist is formed using a photolithography method, and etching treatment for forming a gate electrode is performed, so that conductive layers (also referred to as gate electrodes) 1107 to 1110 functioning as the gate electrodes are formed. Form.

  Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor layers 1128 and 1130 at a low concentration by ion doping or ion implantation to form n-type impurity regions, and the crystalline semiconductor layers 1127 and 1129 are formed. A p-type impurity region is formed by adding an impurity element imparting p-type to the semiconductor layer at a low concentration. Further, phosphorus (P) is used as an impurity element imparting n-type conductivity, and boron (B) is used as an impurity element imparting p-type conductivity.

  Next, an insulating layer is formed so as to cover the gate insulating layer and the conductive layers 1107 to 1110. An insulating layer is a layer containing an inorganic material of silicon, silicon oxide or silicon nitride (sometimes referred to as an inorganic layer) or organic resin such as an organic resin by high-density plasma, plasma CVD, sputtering, or the like. A layer including a material (sometimes referred to as an organic layer) is formed as a single layer or a stacked layer.

  Here, a silicon oxynitride layer is formed as the insulating layer by a plasma CVD method.

  Next, the insulating layer is selectively etched by anisotropic etching mainly in the vertical direction to form insulating layers (hereinafter referred to as sidewall insulating layers) 1115 to 1118 in contact with the side surfaces of the conductive layers 1107 to 1110. (See FIG. 11B). The sidewall insulating layers 1115 to 1118 are used as a doping mask for forming an LDD region later.

  Note that the gate insulating layer is also etched by the etching process for forming the sidewall insulating layers 1115 to 1118, so that gate insulating layers 1119 to 1122 are formed. The gate insulating layers 1119 to 1122 overlap with the conductive layers 1107 to 1110 and the sidewall insulating layers 1115 to 1118. In this manner, the gate insulating layer is etched because the gate insulating layer and the sidewall insulating layers 1115 to 1118 have the same etching rate, and FIG. 11B shows such a case. Yes. Accordingly, when the gate insulating layer and the sidewall insulating layers 1115 to 1118 have different etching rates, the gate insulating layer may remain even after an etching process for forming the sidewall insulating layers 1115 to 1118. is there.

  Subsequently, an impurity element imparting n-type conductivity is added to the crystalline semiconductor layers 1127 and 1129 using the sidewall insulating layers 1115 and 1117 as masks, and a first n-type impurity region (also referred to as an LDD region). 1123a and 1123c and second n-type impurity regions 1124a and 1124c are formed.

  Further, an impurity element imparting p-type conductivity is added to the crystalline semiconductor layers 1128 and 1130 so that first p-type impurity regions (also referred to as LDD regions) 1123b and 1123d and second p-type impurity regions 1124b and 1124d are formed.

  The concentration of the impurity element contained in the first n-type impurity regions 1123a and 1123c is lower than the concentration of the impurity element in the second n-type impurity regions 1124a and 1124c. The concentration of the impurity element contained in the first p-type impurity regions 1123b and 1123d is lower than the concentration of the impurity element in the second p-type impurity regions 1124b and 1124d.

  Note that in order to form the first n-type impurity regions 1123a and 1123c and the first p-type impurity regions 1123b and 1123d, the gate electrode has a stacked structure of two or more layers, and anisotropic etching or the like is performed on the gate electrode. There are a method using the lower conductive layer constituting the gate electrode as a mask and a method using the sidewall insulating layer as a mask. A thin film transistor formed using the former method is called a GOLD (Gate Overlapped Lightly Doped Drain) structure. In the present invention, either the former method or the latter method may be used. However, the use of the latter method using the sidewall insulating layer as a mask has an advantage that the LDD region can be reliably formed and the width of the LDD region can be easily controlled. Note that the second n-type impurity regions 1124a and 1124c and the second p-type impurity regions 1124b and 1124d may be silicided (eg, nickel silicide is formed).

  Through the above steps, n-type thin film transistors 1131 and 1133 are completed. In addition, p-type thin film transistors 1132 and 1134 are completed.

  The n-type thin film transistors 1131 and 1133 each have an LDD structure, and include an active layer including a first n-type impurity region (also referred to as an LDD region), a second n-type impurity region, a channel formation region, a gate insulating layer, And a conductive layer functioning as a gate electrode. The p-type thin film transistors 1132 and 1134 each have an LDD structure, an active layer including a first n-type impurity region (also referred to as an LDD region), a second n-type impurity region, and a channel formation region, and a gate insulation. And a conductive layer functioning as a gate electrode.

  Next, an insulating layer is formed as a single layer or a stacked layer so as to cover the thin film transistors 1131 to 1134.

  Here, a case where two insulating layers are stacked so as to cover the thin film transistors 1131 to 1134 is shown, and a 50-nm-thick silicon oxynitride layer is formed as the first insulating layer 1141 to form two layers. A 600-nm-thick silicon oxide layer is formed as the eye insulating layer 1142. Further, a layer containing silicon oxide may be formed over the second insulating layer 1142 as the third insulating layer.

  Note that before the insulating layers 1141 and 1142 are formed or after one or more thin films of the insulating layers 1141 and 1142 are formed, the crystallinity of the semiconductor layer is restored and the activity of the impurity element added to the semiconductor layer is increased. Heat treatment for the purpose of hydrogenation of the semiconductor layer is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  Next, as illustrated in FIG. 11C, the insulating layers 1141 and 1142 are etched by photolithography to form contact holes that expose the n-type impurity regions 1124a and 1124c and the p-type impurity regions 1124b and 1124d. .

  Next, a conductive layer is formed so as to fill the contact hole, and the conductive layer is patterned to form conductive layers 1155 to 1162. The conductive layers 1155 to 1162 function as a source wiring or a drain wiring of the TFT.

  The conductive layers 1155 to 1162 are formed of an element selected from titanium (Ti), aluminum (Al), and neodymium (Nd) by a plasma CVD method, a sputtering method, or the like, or an alloy material or a compound material containing these elements as a main component Thus, a single layer or a stacked layer is formed. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon.

  Here, as the conductive layers 1155 to 1162, a titanium layer having a thickness of 60 nm, a 40 nm titanium nitride layer, a 500 nm aluminum layer, a 60 nm titanium layer, and a 40 nm titanium nitride layer are sequentially formed from the insulating layer 1142 side by a sputtering method. Form.

  Next, as illustrated in FIG. 11D, an insulating layer 1163 is formed as a single layer or a stacked layer so as to cover the conductive layers 1155 to 1162. Here, the insulating layer 1163 covering the conductive layers 1155 to 1162 is formed using an inorganic insulating layer. As the inorganic insulating layer, a siloxane polymer with a thickness of 1.5 μm is applied, dried and baked to form the insulating layer 1163.

  Next, a contact hole is formed in the insulating layer 1163 covering the conductive layers 1155 to 1162 in the same manner as the insulating layer 1142 covering the thin film transistor, so that the conductive layer 1164 is formed. The conductive layer 1164 functions as an antenna.

  Note that the conductive layer 1164 is formed using a conductive material by a plasma CVD method, a sputtering method, a printing method, a droplet discharge method, a dispenser method, or the like. Preferably, the conductive layer 1164 is formed using an element selected from aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), and gold (Au), or an alloy material containing these elements as a main component, or It is made of a compound material, ferrite, ceramic or the like, and is formed as a single layer or a laminated layer. Specifically, the conductive layer 1164 is formed using a paste containing silver by a screen printing method, and then heat-treated at 50 to 350 ° C. Alternatively, an aluminum film is formed by a sputtering method, and the aluminum film is formed by patterning. For the pattern processing of the aluminum film, wet etching processing is preferably used, and after the wet etching processing, heat treatment at 200 to 300 ° C. is preferably performed. Note that there is no particular limitation on the shape of the conductive layer 1164. For example, a dipole, a ring shape (for example, a loop antenna), a spiral shape, a rectangular parallelepiped (for example, a patch antenna), and the like can be given. The antenna may have a laminated structure. However, those skilled in the art can easily understand that the shape can be changed in addition to these shapes.

  After that, a protective layer such as a layer containing carbon such as DLC (Diamond Like Carbon), a layer containing silicon nitride, or a layer containing silicon nitride oxide is formed over the insulating layer 1163 and the conductive layer 1164 functioning as an antenna. Also good.

  Next, as illustrated in FIG. 12A, the insulating layer 1181 is formed over the insulating layer 1163. The insulating layer 1163 is preferably a planarization layer because it is provided as a protective layer in a subsequent peeling step.

  Here, an epoxy resin layer having a thickness of 25 μm is formed as the insulating layer 1181 by a screen printing method using the printing method described in this embodiment 1 and using the same printing method as in this embodiment 1.

  Next, an opening 1182 is formed so that the release layer 1102 is exposed. The opening 1182 is formed by removing part of the insulating layers 1105, 1141, 1142, 1163, and 1181 by laser ablation or photolithography.

  Here, the opening 1182 is formed by irradiation with a laser beam emitted from an ultraviolet laser.

  Next, an etchant is introduced into the opening 1182 and part of the separation layer 1102 is removed as illustrated in FIG. The partly etched release layer is referred to as a remaining release layer 1183. If the etching agent is wet etching, a mixture of hydrofluoric acid diluted with water or ammonium fluoride, a mixture of hydrofluoric acid and nitric acid, a mixture of hydrofluoric acid, nitric acid and acetic acid, a mixture of hydrogen peroxide and sulfuric acid, hydrogen peroxide And a mixed solution of ammonium water and water, a mixed solution of hydrogen peroxide, hydrochloric acid, and water. In the case of dry etching, a gas containing a halogen atom or molecule such as fluorine or a gas containing oxygen is used. Preferably, a gas or liquid containing halogen fluoride or an interhalogen compound is used as an etchant.

Here, a part of the peeling layer is etched using chlorine trifluoride (ClF ₃ ). The partially etched release layer is designated 1183.

  Next, as illustrated in FIG. 12B, the surface of the insulating layer 1181 and the base 1186 are bonded to each other in the layer 1170 having a plurality of transistors using an adhesive 1185 and the substrate 1100 and the peeling layer 1183 are peeled off.

  Here, only the layer 1170 having a plurality of transistors provided over the insulating layer 1105 is formed by rotating the roller while pressing the adhesive 1185 using the transfer roller provided with the film having low adhesiveness as the base 1186. Transposed. Such a transfer roller can be formed of a silicon-based resin or a fluorine-based resin. At this time, in the case where only the layer 1170 including a plurality of transistors provided over the insulating layer 1105 can be transferred using only the transfer roller without the adhesive 1185, the adhesive 1185 can be omitted.

  Note that in the case where part of the separation layer 1102 is also removed when the opening 1182 is formed, the above-described step of introducing an etching agent can be omitted.

  At this time, the adhesive strength between the base 1186 and the layer 1170 including a plurality of transistors is set to be higher than the adhesion strength between the substrate 1100 and the insulating layer 1105. Then, only the layer including a plurality of transistors provided over the insulating layer 1105 is transferred from the substrate.

  Next, the base 1186 is peeled from the layer 1170 including a plurality of transistors.

  Next, as illustrated in FIG. 13A, a film 1191 is attached to the insulating layer 1105. As film 1191, films made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of fibrous materials, base film (polyester, polyamide, inorganic vapor deposition film, paper, etc.) and adhesive synthetic resin A laminated film with a film (acrylic synthetic resin, epoxy synthetic resin or the like) can be used. In addition, the film is subjected to heat treatment and pressure treatment, and when the heat treatment and pressure treatment are performed, an adhesive layer provided on the outermost surface of the film or an outermost layer is used. The provided layer (not the adhesive layer) is melted by heat treatment and bonded by pressure.

  Further, an adhesive layer may be provided on the surface of the film 1191, or an adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive. It is preferable to use a silica coat for the sheet material. For example, a sheet material in which an adhesive layer, a film such as polyester, and a silica coat can be laminated can be used.

  Here, when a sheet material obtained by laminating an adhesive layer, a PET film, and a silica coat is used as the film 1191, it is possible to prevent moisture and the like from entering the inside after sealing.

  Next, as illustrated in FIG. 13B, the adhesive 1185 is removed from the insulating layer 1181. Note that methods for removing the adhesive 1185 include heat treatment, ultraviolet irradiation, and the like. Here, the adhesive 1185 is removed by irradiating the adhesive 1185 with ultraviolet rays.

  Next, as illustrated in FIG. 13C, the film 1192 is attached to the surface of the layer 1170 including a plurality of transistors and the film 1191, so that the layer 1170 including the plurality of transistors is sealed. As the film 1192, a material similar to the film 1191 can be used as appropriate. In addition, as the film 1191 and the film 1192, films with antistatic measures can be used.

  Note that examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film with an antistatic material attached may be a film with an antistatic material attached to one side, or a film with an antistatic material attached to both sides. Good. Further, a film with an antistatic material attached on one side may be attached to the layer so that the surface with the antistatic material attached is on the inside of the film, or on the outside of the film. You may paste as follows. Note that the antistatic material may be attached to the entire surface or a part of the film. The antistatic material here is a metal or the like.

  Here, as the films 1191 and 1192, a sheet material in which an adhesive layer, a PET film, and a silica coat are laminated is used as the film.

  After that, the layers having a plurality of transistors are individually cut in the bonding regions of the films 1191 and 1192. As a result, an ID chip can be formed.

(Embodiment 7)
In this embodiment mode, a structure of a semiconductor device in which an IC chip is electrically connected to an antenna formed over another substrate after the IC chip is completed will be described.

  FIG. 14A is a cross-sectional view in the manufacturing process of the semiconductor device in this embodiment. In FIG. 14A, an N-channel transistor 62, a P-channel thin film transistor 63, a second insulating layer 61 covering the thin film transistor, over a substrate 1100 having a separation layer 1102 and a first insulating layer 59 formed on one surface; Conductive layers 71 to 73 connected to the third insulating layer 66, the N-channel transistor 62, and the P-channel thin film transistor 63 are provided, and a fourth insulating layer 67 is formed so as to cover the wiring. A wiring 90 electrically connected to the N-channel transistor 62 through a contact hole formed in the layer 67 is provided. Since the steps up to here are the same as the steps up to forming the contact hole in the insulating layer 67 shown in FIG. 10 except that the wiring 90 is formed, the description is omitted.

  Next, an adhesive 93 is applied on the insulating layer 67 so as to cover the wiring 90 electrically connected to the N-channel transistor 62, and the cover material 92 is bonded to the insulating layer 67 with the adhesive 93 (FIG. 14). (See (B).)

  An antenna 91 is formed on the cover material 92 in advance. Note that the antenna 91 may be the same as that in Embodiment 6. In this embodiment, the antenna 91 and the wiring 90 are electrically connected by using an anisotropic conductive resin for the adhesive 93.

  An anisotropic conductive resin is a material in which a conductive material is dispersed in a resin. As the resin, for example, epoxy-based, urethane-based, acrylic-based, or other thermosetting materials, polyethylene-based, polypropylene-based, thermoplastic materials, siloxane-based resins, or the like can be used. Also, as conductive materials, for example, plastic particles such as polystyrene and epoxy, plated with Ni, Au, etc., metal particles such as Ni, Au, Ag, solder, particulate or fibrous carbon, fibrous Ni Those plated with Au can be used. The size of the conductive material is desirably determined according to the pitch of the antenna 91 and the wiring 90.

  Further, the anisotropic conductive resin may be pressed between the antenna 91 and the wiring 90 while applying heat, or may be pressed while being cured by irradiation with ultraviolet rays.

  Note that although an example in which the antenna 91 and the wiring 90 are electrically connected with the adhesive 93 using an anisotropic conductive resin is described in this embodiment mode, the present invention is not limited to this structure. Instead of the adhesive 93, an anisotropic conductive film may be used, and the antenna 91 and the wiring 90 may be electrically connected by pressing the anisotropic conductive film.

  After the cover material 92 is bonded to the insulating layer 67, it is possible to peel off the substrate 1100 and the release layer 1102 regardless of whether an anisotropic conductive resin is used or an anisotropic conductive film is used. A flexible ID chip can be manufactured.

(Embodiment 8)
The configuration of the semiconductor device of this embodiment will be described with reference to FIG. As shown in FIG. 15, the semiconductor device 20 of the present invention has a function of communicating data without contact, and controls to control a power supply circuit 11, a clock generation circuit 12, a data demodulation / modulation circuit 13, and other circuits. A circuit 14, an interface circuit 15, a memory circuit 16, a data bus 17, an antenna (antenna coil) 18, a sensor 21, and a sensor circuit 22 are included.

  The power supply circuit 11 is a circuit that generates various power supplies to be supplied to each circuit inside the semiconductor device 20 based on the AC signal input from the antenna 18. The clock generation circuit 12 is a circuit that generates various clock signals to be supplied to each circuit inside the semiconductor device 20 based on the AC signal input from the antenna 18. The data demodulation / modulation circuit 13 has a function of demodulating / modulating data communicated with the reader / writer 19. The control circuit 14 has a function of controlling the memory circuit 16. The antenna 18 has a function of transmitting / receiving electromagnetic waves or radio waves. The reader / writer 19 controls communication and control with the semiconductor device and processing related to the data. The semiconductor device is not limited to the above-described configuration, and may be a configuration in which other elements such as a power supply voltage limiter circuit and hardware dedicated to cryptographic processing are added.

  The memory circuit 16 includes a memory element in which an organic compound layer or a phase change layer is sandwiched between a pair of conductive layers. Note that the memory circuit 16 may include only a memory element in which an organic compound layer or a phase change layer is sandwiched between a pair of conductive layers, or may include a memory circuit having another structure. The memory circuit having another configuration corresponds to, for example, one or more selected from DRAM, SRAM, FeRAM, mask ROM, PROM, EPROM, EEPROM, and flash memory.

  The sensor 21 is formed of a semiconductor element such as a resistance element, a capacitive coupling element, an inductive coupling element, a photovoltaic element, a photoelectric conversion element, a thermoelectric element, a transistor, a thermistor, or a diode. The sensor circuit 22 detects a change in impedance, reactance, inductance, voltage or current, performs analog / digital conversion (A / D conversion), and outputs a signal to the control circuit 14.

(Embodiment 9)
According to the present invention, a semiconductor device (also referred to as an IC chip, an ID chip, an ID tag, an RFID, a wireless processor, a wireless memory, or a wireless tag) having a function of receiving and transmitting data wirelessly can be formed. The semiconductor device 9210 has a wide range of uses. For example, banknotes, coins, securities, bearer bonds, certificates (driver's license, resident's card, etc., see FIG. 16A), packaging containers (packaging) Paper, bottles, etc., see FIG. 16C), recording media (DVD software, videotapes, etc., see FIG. 16B), vehicles (bicycles, etc., see FIG. 16D), personal items (Bags, glasses, etc.), foods, plants, animals, human body, clothing, daily necessities, electronic equipment, etc., and luggage tags (see FIGS. 16E and 16F). It can be used on an article. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions, television receivers, television receivers), cellular phones, and the like.

  The semiconductor device is fixed to the article by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Forgery can be prevented by providing semiconductor devices for banknotes, coins, securities, bearer bonds, certificates, and the like. Further, by providing semiconductor devices in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems, rental store systems, and the like. A semiconductor device that can be formed according to the present invention is small, thin, and lightweight because it is provided on a cover material after a thin film integrated circuit formed over a substrate is peeled off by a peeling process. The design will not be impaired. Furthermore, since it has flexibility, it can be used for a bottle or pipe having a curved surface.

  Further, by applying a semiconductor device that can be formed according to the present invention to an object management or distribution system, it is possible to increase the functionality of the system. For example, by reading the information recorded on the semiconductor device provided on the packing slip with a reader / writer provided on the side of the belt conveyor, information such as the distribution process and delivery destination is read, and inspection of goods and distribution of goods Can be done easily.

  In the present embodiment, the film thickness distribution when an epoxy resin is printed on a glass substrate using a conventional screen printing apparatus and the screen printing apparatus of the present invention is illustrated. As a conventional printing apparatus, a printing stage having a flat surface was used, and the printing apparatus of the present invention used a stage capable of making the four corners of the substrate on the stage higher than the central portion.

  Here, using a screen printing plate having an opening and having an emulsion, the distribution of the resin film thickness was measured when the epoxy resin was applied and then baked. The film thickness distribution at this time will be described with reference to FIGS.

  A 126.6 mm square glass substrate was used as the substrate. The screen printing plate is provided with a 116 mm square opening. In addition, a comparison was made using a stage having a flat stage as a conventional printing apparatus and a stage capable of lifting the four corners of the substrate by 50 μm as the printing apparatus of the present invention.

  Moreover, Mitsui Chemicals, Inc. product name struct bond XN-651 was used as an epoxy resin. A screen printing plate having a wire mesh thickness of 45 μm and a wire mesh opening width of 109 μm was used.

  First, a screen printing plate was placed at a distance of 1.265 mm from the surface of the substrate. Next, the epoxy resin was spread on the screen printing plate using a scraper. The scraper pressure at this time was 0.140 MPa, and the scraper stroke speed was 30 mm / s.

  Subsequently, the squeegee was pressed to apply an epoxy resin to the substrate surface. The squeegee pressure at this time was 0.158 MPa, and the squeegee stroke speed was 35 mm / s. Thereafter, the resin formed on the substrate surface was heated at 160 ° C. for 30 minutes to cure the epoxy resin and form a film made of the epoxy resin.

  Next, using a laser displacement meter, measurement was performed at 2 mm intervals within a range of −40 to 40 mm in the X direction and −40 to 40 mm in the Y direction from the center of the glass substrate having a film made of epoxy resin on the surface. The direction perpendicular to the direction of squeegee travel is the X direction, and the direction of squeegee travel is the Y direction.

  The film thickness distribution of the epoxy resin when using the flat stage at this time is shown in FIG. 17, and the film thickness distribution of the epoxy resin when using the stage where the four corners of the glass substrate are lifted by 50 μm is shown in FIG.

  As shown in FIGS. 17 to 18, the epoxy resin formed on the glass substrate has a thin film thickness at the center of the print pattern and a thick film at the outer periphery of the print pattern. In FIG. 17, there was a difference of about 12 μm between the thickest part and the thinnest part. On the other hand, in FIG. 18, the difference between the thickest part and the thinnest part was about 8 μm.

  From the above results, by adjusting the height of the printing stage on the printing stage, it is possible to make the distance between the substrate and the squeegee caused by the deflection of the squeegee uniform and to control the film thickness of the printing resin uniformly. Met.

Sectional drawing and front view of the screen printing machine of this invention. The perspective view and sectional drawing of the to-be-printed material of the screen printer of this invention. The perspective view and sectional drawing of the to-be-printed material produced using the screen printer of this invention. The perspective view and sectional drawing which show the film thickness measurement process of the to-be-printed material of the screen printer of this invention. Sectional drawing which shows the dummy printing state of the screen printer of this invention. Sectional drawing which shows the screen printer of this invention, and to-be-printed material. Sectional drawing which shows the screen printer of this invention, and to-be-printed material. Sectional drawing which shows the screen printer of this invention, and to-be-printed material. Sectional drawing which shows the screen printer of this invention, and to-be-printed material. Sectional drawing which shows the screen printer of this invention, and to-be-printed material. Sectional drawing which showed the process of forming the semiconductor device of this invention. Sectional drawing which showed the process of forming the semiconductor device of this invention. Sectional drawing which showed the process of forming the semiconductor device of this invention. Sectional drawing which showed the process of forming the semiconductor device of this invention. The block diagram which shows the functional structure of ID chip. FIG. 11 is a perspective view illustrating an application example of a semiconductor device of the invention. The figure which shows the film thickness distribution of the resin film formed using the conventional screen printing apparatus. The figure which shows the film thickness distribution of the resin film formed using the screen printing apparatus of this invention.

Explanation of symbols

1 printing stage 1a stage 1b stage 1c stage 1d stage 1e stage 1p printing stage 1q jig 1r flexible board 2 pin 2a pin 2b pin 2c pin 2d pin 2e pin 3 cylinder 3a cylinder 3b cylinder 3c cylinder 3d cylinder 3e cylinder 4 Squeegee 5 Print head 5a Cylinder 5b Cylinder 5c Cylinder 5d Cylinder 5e Cylinder 5f Cylinder 6 Cylinder 7 Printed material 8 Printing resin 9 Means for measuring change 10 Means for determining measurement position 11 Power supply circuit 12 Clock generation circuit 13 Data demodulation / Modulation circuit 14 Control circuit 15 Interface circuit 16 Memory circuit 17 Data bus 18 Antenna 19 Reader / writer 20 Semiconductor device 21 Sensor 22 Sensor circuit 59 First insulating layer 61 Second insulating layer 62 N channel Type transistor 63 P channel type thin film transistor 66 insulating layer 67 insulating layer 71 conductive layer 72 conductive layer 73 conductive layer 90 wiring 91 antenna 92 cover material 93 adhesive 100 screen printing plate 103 frame 104 mesh 105 emulsion 106 paste 111 paste 121 film pattern 131 Film pattern 141 Film pattern 1100 Substrate 1101 Insulating layer 1102 Release layer 1105 Insulating layer 1107 Conductive layer 1108 Conductive layer 1109 Conductive layer 1110 Conductive layer 1115 Insulating layer 1116 Insulating layer 1117 Insulating layer 1118 Insulating layer 1119 Gate insulating layer 1120 Gate insulating layer 1121 Gate insulating layer 1122 Gate insulating layer 1123a First n-type impurity region 1123b First p-type impurity region 1123c First n-type impurity region 1123d First p-type impurity region 11 4a Second n-type impurity region 1124b Second p-type impurity region 1124c Second n-type impurity region 1124d Second p-type impurity region 1127 Crystalline semiconductor layer 1128 Crystalline semiconductor layer 1129 Crystalline semiconductor layer 1130 Crystalline Semiconductor layer 1131 n-type thin film transistor 1132 p-type thin film transistor 1133 n-type thin film transistor 1134 p-type thin film transistor 1141 insulating layer 1142 insulating layer 1155 conductive layer 1156 conductive layer 1157 conductive layer 1158 conductive layer 1159 conductive layer 1160 conductive layer 1161 conductive layer 1162 Conductive layer 1163 Insulating layer 1164 Conductive layer 1170 Transistor-containing layer 1181 Insulating layer 1182 Opening 1183 Peeling layer 1185 Adhesive 1186 Base 1191 Film 1192 Film 9210 Semiconductor device

Claims (3)

A first insulating layer, a release layer, and a second insulating layer are sequentially stacked on the first substrate;
Forming a TFT on the second insulating layer;
Forming a third insulating layer on the TFT by a screen printing method;
Providing a second substrate on the third insulating layer;
A part of the release layer is removed, and the second insulating layer is exposed by peeling the first substrate and the first insulating layer;
Providing a first film in contact with the second insulating layer;
Peeling off the second substrate;
A method of manufacturing a semiconductor device in which a second film is provided on the third insulating layer,
In the screen printing method, the first substrate is disposed on a stage divided into a plurality of stages, and each of the stages divided into the plurality is moved up and down to give the first substrate a flexure. A method for manufacturing a semiconductor device, which is performed by sliding a squeegee in a state where In claim 1,
A pin is attached to each of the plurality of divided stages, and the height of the divided stage is adjusted independently by moving the pin up and down by a cylinder. A method for manufacturing a semiconductor device. In claim 1 or claim 2,
Each of the divided stages in the plurality, the method for manufacturing a semiconductor device comprising a Turkey that having a means for securing the first substrate.

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