JP5045445B2 - Mask pattern correction method, mask pattern correction program, mask pattern correction apparatus, exposure condition setting method, exposure condition setting program, exposure condition setting apparatus, semiconductor device manufacturing method, semiconductor device manufacturing program, and semiconductor device manufacturing apparatus - Google Patents

Description

  The present invention relates to a mask pattern correction method, a mask pattern correction program and a mask pattern correction apparatus for correcting a mask pattern used in an exposure apparatus for transferring an image of a mask pattern onto a wafer surface, and exposure for setting an exposure condition in the exposure apparatus. The present invention relates to a condition setting method, an exposure condition setting program and an exposure condition setting device, and a semiconductor device manufacturing method, a semiconductor device manufacturing program and a semiconductor device manufacturing apparatus for manufacturing a semiconductor device using the exposure apparatus.

  Recent progress in semiconductor manufacturing technology is very remarkable, and semiconductor devices having a minimum processing dimension of 0.1 μm or less are mass-produced. In such a fine processing dimension, the margin of the light source wavelength of the exposure apparatus used in the lithography process is small. Therefore, in recent years, in order to form a pattern with a desired shape and size on the resist layer on the surface of the wafer, it is common to correct the design pattern using OPC (Optical Proximity effect Correction). Has been done.

  However, when the minimum processing dimension is 0.1 μm or less, it is not easy to completely eliminate hot spots even if the design pattern is corrected using OPC. Here, a hot spot can be transferred without any problem under standard exposure conditions (focus amount, exposure amount, overlay deviation amount, etc.), but when exposure conditions are deviated due to exposure variations (for example, defocus amount). When the exposure amount becomes + 5% at +50 nm), it means a pattern that is not transferred correctly and becomes a defect. The types of defects include, for example, functional defects in which wiring is interrupted, adjacent wirings are short-circuited, wiring is thinned or the overlapping area between wiring and vias is reduced, and wiring resistance is increased. There is a characteristic defect that prevents the circuit from performing a desired operation due to an increase in signal delay.

  For this reason, conventionally, many measures for reducing the occurrence of hot spots using an OPC tool, a lithography simulator, a hot spot inspection tool, and the like have been proposed. For example, Patent Documents 1 to 3 propose performing an OPC process that does not cause hot spots under a plurality of exposure conditions. Further, for example, in Patent Document 4, the position of each exposed region (shot region) on the wafer surface is detected before exposure, and the deviation amount (defocus amount) between the exposed region and the focus plane of the exposure apparatus is minimized. In autofocus / autoleveling in which the stage is adjusted so as to be, a method for detecting the position of the exposed area on the wafer surface with high accuracy has been proposed. For example, Patent Document 5 proposes a method for accurately predicting the unevenness of the wafer surface by simulating a CMP (Chemical Mechanical Polishing) process. Further, for example, Patent Document 6 proposes a measure for accurately measuring the unevenness of the wafer surface in advance using an atomic force microscope (AFM).

JP 20051-134520 A JP 2005-181524 A JP 2006-058552 A JP 2004-247476 A JP 2002-342399 A JP-A-6-281449

  However, in autofocus / autoleveling, as described above, one focus plane is set for each exposed area, and therefore, a large gap between the exposed area and the focus plane is caused by a step formed on the wafer surface. If this occurs, the entire area to be exposed cannot be focused. For this reason, when the focus margin of the pattern exposed at a defocused position is small, it is not possible to form a pattern having a desired shape and size on the resist layer on the surface of the wafer upon exposure. There is a problem that a hot spot is generated.

  Conventionally, the presence / absence of a hot spot is inspected using a defocus amount obtained by adding a step on the wafer surface to the focus variation of the exposure apparatus as a “deviation exposure condition”. However, when the exposed area and the focus plane are coincident with each other, the amount of defocus will be excessively estimated by the level difference, but the pattern determined as a hot spot in such a place is actually May not be a defect. However, in the past, correction was also applied to a pattern that was mistakenly determined as a hot spot, so that if the level difference occurred on the wafer surface, the number of steps required to correct the pattern was enormous.

  The present invention has been made in view of such a problem, and an object of the present invention is to provide a mask pattern correction method, a mask pattern correction program, and a mask pattern correction capable of correcting only a pattern that is not correctly transferred and becomes a defect. Apparatus, exposure condition setting method, exposure condition setting program and exposure condition setting apparatus capable of reducing the occurrence of a pattern that is not correctly transferred and becomes a defect, and a semiconductor using such an exposure condition setting method A semiconductor device manufacturing method for manufacturing a device, a semiconductor device manufacturing program, and a semiconductor device manufacturing apparatus.

According to the mask pattern correction method of the present invention, a projection optical system for projecting an image of a mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and a focus position on the wafer surface are aligned. A method for correcting a mask pattern used in an exposure apparatus that has an adjustment mechanism and transfers an image of the mask pattern onto the wafer surface, and includes the following steps (A1) to (A5).
(A1) A wafer corresponding to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using a mask. First acquisition step of acquiring a specific position on the surface for each different defocus condition (A2) Second acquisition step of acquiring a focus tolerance of a portion corresponding to the specific portion of the mask pattern (A3) Unevenness at the specific position Third acquisition step of acquiring information (A4) In the calculation step of trying to calculate the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus margin (A5) in the calculation step As a result of the calculation, if the focus plane does not fall within the focus margin, a specific part of the mask pattern will increase so that the focus margin increases. Correcting step of correcting the a corresponding portion, and the focus plane is not fall within the focus margin portion

A mask pattern correction program according to the present invention uses a mask having a mask pattern created based on a design pattern to project a mask pattern image on the wafer surface, and a focus position on the wafer surface. A program for correcting a mask pattern used in an exposure apparatus that transfers an image of a mask pattern onto a wafer surface, and causes a computer to execute the following steps (B1) to (B5) Is.
(B1) A wafer corresponding to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using a mask. First acquisition step of acquiring a specific position on the surface for each different defocus condition (B2) Second acquisition step of acquiring a focus tolerance of a portion corresponding to the specific portion of the mask pattern (B3) Unevenness at the specific position Third acquisition step (B4) for acquiring information In a calculation step (B5) for trying to calculate the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus margin As a result of the calculation, if the focus plane does not fall within the focus margin, the mask pattern is set so that the focus margin increases. Correction step of a portion corresponding to the particular portion of the over emissions, and the focus plane to modify the no longer fit fall within the focus tolerance

A mask pattern correction apparatus according to the present invention uses a mask having a mask pattern created based on a design pattern to project an image of the mask pattern onto the wafer surface, and a focus position on the wafer surface. An apparatus for correcting a mask pattern used in an exposure apparatus that transfers an image of a mask pattern onto a wafer surface, and includes the following components (C1) to (C5) It is.
(C1) A wafer corresponding to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using a mask. First acquisition unit (C2) for acquiring a specific position on the surface for each different defocus condition Second acquisition unit (C3) for acquiring a focus tolerance of a part corresponding to the specific part in the mask pattern A third acquisition unit (C4) that acquires information In a calculation unit (C5) that tries to calculate the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus margin As a result of the calculation, if the focus plane does not fall within the focus margin, it corresponds to a specific part of the mask pattern so that the focus margin increases. A minute, and corrects the portion where focus plane can not fall within the focus margin pattern correction unit

  In the mask pattern correction method, mask pattern correction program, and mask pattern correction apparatus of the present invention, the wafer surface is specified so that the focus surface of the projection optical system falls within the focus tolerance of the portion corresponding to the specific portion of the mask pattern. Attempts are made to calculate the setting conditions of the adjustment mechanism in consideration of the unevenness information of the position.As a result, if the focus plane does not fall within the focus margin, the mask pattern is set so that the focus margin increases. The part corresponding to the specific part and the part where the focus surface does not fall within the focus margin is corrected. As a result, it is possible to eliminate correction of a pattern that does not actually become a defect.

An exposure condition setting method according to the present invention includes a projection optical system that projects an image of a mask pattern on a wafer surface using a mask having a mask pattern created based on a design pattern, and a focus position on the wafer surface. An exposure condition setting method in an exposure apparatus that has an adjustment mechanism and transfers a mask pattern image onto the wafer surface, and includes the following steps (D1) to (D4).
(D1) A wafer corresponding to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using a mask. First acquisition step (D2) for acquiring a specific position on the surface for each different defocus condition (D2) Second acquisition step (D3) for acquiring a focus tolerance of a portion corresponding to the specific portion in the mask pattern. Third acquisition step of acquiring information (D4) Derivation step of deriving the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus tolerance

An exposure condition setting program according to the present invention uses a mask having a mask pattern created based on a design pattern to project a mask pattern image onto a wafer surface, and a focus position on the wafer surface. An exposure condition setting method for setting exposure conditions in an exposure apparatus that has an adjustment mechanism and transfers a mask pattern image onto a wafer surface, and executes the following steps (E1) to (E4) on a computer: It is something to be made.
(E1) A wafer corresponding to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using a mask. First acquisition step (E2) for acquiring a specific position on the surface for each different defocus condition. Second acquisition step (E3) for acquiring a focus tolerance of a portion corresponding to the specific portion of the mask pattern. Third acquisition step of acquiring information (E4) Derivation step of deriving the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus margin

An exposure condition setting apparatus of the present invention uses a mask having a mask pattern created based on a design pattern to project a mask pattern image on the wafer surface, and a focus position on the wafer surface. An exposure condition setting apparatus that sets an exposure condition in an exposure apparatus that has an adjustment mechanism and transfers a mask pattern image onto the wafer surface, and executes the following steps (F1) to (F4) in a computer It is something to be made.
(F1) A wafer corresponding to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using a mask. First acquisition unit (F2) for acquiring a specific position on the surface for each different defocus condition Second acquisition unit (F3) for acquiring a focus tolerance of a part corresponding to the specific part in the mask pattern Third acquisition unit for acquiring information (F4) Deriving unit for deriving the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus tolerance

  In the exposure condition setting method, exposure condition setting program, and exposure condition setting apparatus of the present invention, the wafer surface is specified so that the focus surface of the projection optical system falls within the focus tolerance of the portion corresponding to the specific portion of the mask pattern. The setting condition of the adjusting mechanism is derived in consideration of the position unevenness information. Thereby, generation | occurrence | production of the pattern used as a defect can be eliminated.

  A semiconductor device manufacturing method according to the present invention includes a projection optical system that projects an image of a mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and a focus position on the wafer surface. And a manufacturing process for manufacturing a semiconductor device using an exposure apparatus that transfers an image of a mask pattern onto the wafer surface.

  A semiconductor device manufacturing program according to the present invention includes a projection optical system that projects an image of a mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and a focus position on the wafer surface. And an adjustment mechanism for causing a computer to manufacture a semiconductor device using an exposure apparatus that transfers an image of a mask pattern onto a wafer surface.

  A semiconductor device manufacturing apparatus according to the present invention uses a mask having a mask pattern created based on a design pattern to project a mask pattern image onto a wafer surface, and a focus position on the wafer surface. And a manufacturing unit that manufactures a semiconductor device using an exposure apparatus that transfers an image of a mask pattern onto the wafer surface.

  Here, in the semiconductor device manufacturing method, the semiconductor device manufacturing program, and the semiconductor device manufacturing apparatus of the present invention, the setting condition of the adjustment mechanism is formed on the wafer surface when the mask pattern is transferred onto the wafer surface using the mask. Information on the surface of the wafer corresponding to a specific portion exceeding a predetermined range in relation to a pattern of a desired shape and size in a transferred image and acquired at a specific position for each different defocus condition In consideration of the above, the focus plane of the projection optical system is derived so as to fall within the focus tolerance of the portion corresponding to the specific portion of the mask pattern.

  In the semiconductor device manufacturing method, the semiconductor device manufacturing program, and the semiconductor device manufacturing apparatus of the present invention, when a mask pattern is transferred onto the wafer surface using a mask, a transfer image formed on the wafer surface has a desired shape and size. Focus on the projection optical system, taking into account the unevenness information at the specific position acquired for each different defocus condition at the position of the wafer surface corresponding to the specific part exceeding the predetermined range in relation to the pattern A setting condition derived so that the surface falls within the focus tolerance of the portion corresponding to the specific portion of the mask pattern is used to drive the adjustment mechanism. Thus, the mask pattern can be transferred to the wafer surface while ensuring a sufficient focus margin.

  According to the mask pattern correction method, mask pattern correction program, and mask pattern correction apparatus of the present invention, the wafer surface so that the focus surface of the projection optical system falls within the focus tolerance of the portion corresponding to the specific portion of the mask pattern. Attempting to calculate the setting conditions of the adjustment mechanism in consideration of the unevenness information of the specific position of the mask, and as a result, if the focus plane does not fall within the focus margin, the mask pattern is set so that the focus margin increases. Of those, the part corresponding to a specific part and the part where the focus surface did not fall within the focus tolerance was corrected, so even if there was a step on the wafer surface, it was not correctly transferred and became a defect. Only the pattern that ends up can be corrected.

  According to the exposure condition setting method, the exposure condition setting program, and the exposure condition setting apparatus of the present invention, the wafer surface is set so that the focus surface of the projection optical system falls within the focus tolerance of the portion corresponding to the specific portion of the mask pattern. Since the setting conditions of the adjustment mechanism are derived in consideration of the unevenness information at the specific position of the exposure, even if there is a step on the wafer surface, exposure that reduces the occurrence of patterns that are not transferred correctly and become defects Conditions can be set.

  According to the semiconductor device manufacturing method, the semiconductor device manufacturing program, and the semiconductor device manufacturing apparatus of the present invention, when a mask pattern is transferred onto the wafer surface using a mask, a transfer image formed on the wafer surface has a desired shape and Projection optical system in consideration of unevenness information at a specific position that is acquired at each defocus condition that is a position on the wafer surface corresponding to a specific part that exceeds a predetermined range in relation to the dimension pattern Since the setting condition derived so that the focus surface of the mask pattern falls within the focus tolerance of the portion corresponding to the specific portion of the mask pattern is used for driving the adjustment mechanism, even if there is a step on the wafer surface, The mask pattern can be accurately transferred to the wafer surface. As a result, the yield in manufacturing the semiconductor device can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
FIG. 1 shows a schematic configuration of an exposure apparatus 1 (semiconductor device manufacturing apparatus) according to the first embodiment of the present invention. The exposure apparatus 1 is set by an exposure condition setting method described later, and the illumination optical system 10, the mask 11, the reduction projection optical system 12, and the stage 13 are arranged in this order on the optical axis AX of the illumination optical system 10. It is a thing. A wafer W is disposed between the reduction projection optical system 12 and the stage 13.

  For example, the wafer W is provided with a resist layer made of a photosensitive resin on a semiconductor substrate, and is disposed on the stage 13 with the resist layer facing the reduction projection optical system 12. Further, for example, as shown in FIG. 2, rectangular exposure areas (shot areas) SH are two-dimensionally arranged on the surface of the wafer W, and each shot area SH is cut out by a subsequent dicing process. Corresponding to individual chip-like semiconductor devices.

  The illumination optical system 10 includes, for example, a light source such as a mercury lamp, an optical integrator, a condenser lens, and the like, and a light beam having a uniform illuminance in the in-plane direction is slit into a part of the pattern area of the mask 11. It comes to irradiate.

  The mask 11 has a mask pattern obtained by correcting a mask pattern created by performing a predetermined OPC process using a mask pattern correction method described later, and the optical axis AX is a normal line. It is placed on a mask stage (not shown) that can reciprocate in one direction (y direction) on the plane. Here, the OPC process is a process of substituting a predetermined value (for example, zero) as a defocus value which is one of the input parameters of the OPC program, and correcting a design pattern created from the integrated circuit design data. The position of the mask stage is measured by a position measuring device (not shown), and the mask 11 can be positioned at a predetermined position.

  The reduction projection optical system 12 is formed by superposing a plurality of optical lenses, and has a magnification of, for example, 1/5.

  The stage 13 is provided on an xy stage (not shown), and the movement of the wafer W in the optical axis AX direction (z direction) of the reduction projection optical system 12 and the movement of the wafer W with respect to a plane having the optical axis AX as a normal line. Inclination and adjustment are possible. The xy stage can adjust the movement of the wafer W in the in-plane direction (xy direction) of a plane having the optical axis AX as a normal line.

  The exposure apparatus 1 is provided with an autofocus sensor 14. The autofocus sensor 14 is a multipoint autofocus sensor, and measures the positional deviation (focal deviation) of the surface of the wafer W in the optical axis AX direction at a plurality of locations including within the image field of the reduction projection optical system 12. Measuring points to be used, and used for measurement of a reference surface S1 to be described later.

  For example, as shown in FIG. 1, the autofocus sensor 14 is a grazing incidence light sensor having a light emitting portion 14A and a detection portion 14B disposed on both sides with a reduction projection optical system 12 in between. The light emitting unit 14A is for emitting a light beam to the surface of the wafer W, and includes, for example, a light source, a condenser lens, a diaphragm having a plurality of projection slits, a collimator lens, and an objective lens. The detection unit 14B detects light reflected from the surface of the wafer W and emitted from the light emitting unit 14A. For example, the detection unit 14B includes an objective lens, a condenser lens, a vibration mirror, and a light receiving slit. It includes a diaphragm, a light receiving element, and the like. Here, the diaphragm in the light emitting unit 14A is, for example, one in which five rows of slits composed of five slits arranged at regular intervals along one direction are provided at a predetermined interval in a direction orthogonal to the one direction. The image projected through the slit is formed in the shot region SH on the surface of the wafer W. The portion of the shot area SH on which the image is projected corresponds to the measurement point of the autofocus sensor 14. For example, as shown in FIG. 3, the measurement point AF is 5 in the x-axis direction and the y-axis direction. They are arranged in a x5 matrix. The measurement point AF corresponding to the central portion in the y-axis direction among the measurement points AF corresponds to the exposure area L of the reduction projection optical system 12, and is before and after the exposure area L (before and after in the scan direction). Also, each measurement point AF is provided.

  The autofocus sensor 14 may be of a system other than the oblique incident light type shown in FIG. 1, for example, a system using a gap sensor such as an air microsensor or a capacitance sensor. Good. However, when a gap sensor is used as the autofocus sensor 14, each measurement point AF is provided only before and after the exposure area L (before and after in the scanning direction).

  The exposure apparatus 1 is provided with a control unit 15 and a storage unit 16.

  The control unit 15 is for controlling the exposure light amount of the light source of the illumination optical system 10, the mask stage, the xy stage, the stage 13, the autofocus sensor 14, the storage unit 16, and the like. For example, the control unit 15 moves the mask stage in the scanning direction (y-axis direction), and changes the pattern area of the mask 11 to the area (illumination area) illuminated in a slit shape in a part of the pattern area of the mask 11. The scanning is performed in the scanning direction (y-axis direction), and all the patterns in the mask 11 are controlled to pass through the illumination area by one scanning. On the other hand, the xy stage is moved in the direction opposite to the scanning direction of the mask 11 in synchronization with the mask 11, and the shot area SH of the wafer W is scanned with respect to the exposed area L. At this time, the xy stage is controlled so that the moving speed of the xy stage is equal to the moving speed of the mask stage multiplied by the magnification of the reduction projection optical system 12. Further, for example, the control unit 15 uses a leveling parameter 16C described later so that the reference surface S1 and the wafer surface S2 have a predetermined relationship in each exposed region (exposed region L) that is exposed simultaneously during exposure. The stage 13 is controlled.

  The storage unit 16 stores a control program 16A for performing control as exemplified above, and process parameters 16B and leveling parameters 16C used in the control program. Here, the process parameter 16B includes, for example, exposure wavelength, exposure amount, focus, defocus, dose, numerical aperture, coherence factor, and the like. Further, the leveling parameter 16C includes the amount of movement of the stage 13 in the direction of the optical axis AX and the inclination angle of the stage 13 with respect to a plane having the optical axis AX as a normal line. These are set by an exposure condition setting method to be described later, and are set for each exposed region (exposed region L) that is exposed at the same time during exposure.

  By the way, the reference surface S1 is a plane virtually set as the surface S2 of the wafer W as shown in FIG. 4, and the position of the reference surface S1 with the best imaging surface of the reduction projection optical system 12 at the time of exposure or the like. The deviation is set to be minimal. Therefore, it can be said that the reference plane S1 coincides with the best imaging plane (focus plane) of the reduction projection optical system 12 within the range of focus variation of the exposure apparatus 1 during exposure. The reference surface S1 can be set by using the measurement value of the autofocus sensor 14. For example, a mask measurement device (not shown) built in the exposure apparatus 1 or an atomic force microscope (not shown) is used. It can also be set by using a measured value such as Further, when the reference surface S1 is set by using the measurement value of the autofocus sensor 14, it is preferable to interpolate between the measurement points AF according to a predetermined rule. The reference plane S1 can be set by simulation.

  The wafer surface S2 illustrated in FIG. 4 is the outermost surface of the wafer W. The unevenness information of the wafer surface S2 can be derived by actually measuring the wafer surface S2 using an atomic force microscope or the like, but can also be derived using, for example, a CMP simulation.

  In the exposure apparatus 1 of the present embodiment, the light beam from the illumination optical system 10 enters the surface of the wafer W through the mask 11 and the reduction projection optical system 12. As a result, the mask pattern formed on the mask 11 is reduced and transferred to the surface of the wafer W.

  By the way, in the present embodiment, the amount of movement of the stage 13 in the direction of the optical axis AX and the inclination angle of the stage 13 with respect to a plane having the optical axis AX as a normal line are set by the leveling method described later. Using the parameter 16C, adjustment is made for each exposed region (exposed region L) that is exposed simultaneously during exposure. As a result, the mask pattern can be transferred to the wafer surface S2 while ensuring a sufficient focus margin. Therefore, even if there is a step on the wafer surface S2, the mask pattern can be accurately transferred to the wafer surface S2. Can do. As a result, the yield in manufacturing the semiconductor device can be improved.

[Second Embodiment]
FIG. 5 shows a schematic configuration of the mask pattern correction apparatus 2 of the present embodiment. The mask pattern correction apparatus 2 substitutes a predetermined value (for example, zero) as a defocus value which is one of input parameters of the OPC program, and performs an OPC process on a design pattern created from integrated circuit design data. The mask pattern created in this way (hereinafter, simply referred to as “mask pattern created based on the design pattern”) is corrected by using a mask pattern correction method described later, whereby the mask 11 according to the above embodiment is corrected. This is for obtaining a mask pattern, and includes a calculation unit 20, an input unit 21, and a storage unit 22.

  The arithmetic unit 20 is for executing a program stored in the storage unit 22, and the input unit 21 is for inputting information necessary for executing the program stored in the storage unit 22. It is.

  In addition to the mask pattern correction program 22A that causes the calculation unit 20 to execute a mask pattern correction procedure described later, the storage unit 22 stores various data used in this program. Specifically, specific position information 22B, focus tolerance information 22C, unevenness information 22D, threshold 22E, and the like are stored. If the specific position information 22B, the focus tolerance information 22C, the unevenness information 22D, and the threshold 22E are not stored in the storage unit 22 in advance, these may be input from the input unit 21 as needed. .

  Here, the specific position information 22B is desired in a transfer image formed on the wafer surface S2 when the mask pattern is transferred onto the wafer surface S2 using a mask having a mask pattern created based on the design pattern. The xy coordinates (xy coordinates of the hot spot candidate P) of the wafer surface S2 corresponding to a specific portion exceeding a predetermined range (threshold value 22E) in relation to the pattern of the shape and dimension (see FIG. 6). The position information of the hot spot candidate P includes the position information of the hot spot candidate P obtained for each different defocus condition.

  The threshold 22E is set according to the circuit pattern and defect type, and is set for the entire mask pattern. In the case of open or short, which is a functional defect, the wiring width obtained from the manufacturing process capability and the space between the wirings have the threshold value 22E. For example, when the wiring width is less than 90 nm in the open state, When determining, 90 nm is set as the value of the threshold 22E, and in the case of a short circuit, when determining that the defect is when the space between the wirings is less than 80 nm, 80 nm is set as the value of the threshold 22E. Further, in the case of wiring delay that is a characteristic defect, for example, when it is determined that a defect is caused when a specific circuit pattern is deviated by 5% or more from the line width of the original design pattern, the value of the threshold 22E is used as the value of the original design pattern. 5% of the line width is set.

  The focus margin information 22C includes information on the focus margin ΔF (see FIG. 6) of a portion (hot spot) corresponding to the above-described specific portion of the mask pattern created based on the design pattern. Here, the size of the focus margin ΔF is set according to the dose and the size of the threshold 22E. Therefore, the size of the focus tolerance ΔF is usually different for each hot spot candidate P. The focus margin information 22C may include information on the focus margin ΔF for the entire mask pattern created based on the design pattern.

  The unevenness information 22D includes information on the surface position (xyz coordinates) of the portion corresponding to the above-described specific portion of the wafer surface S2. Therefore, in each hot spot candidate P, by adding the focus tolerance information 22C to the unevenness information 22D, as shown in FIG. 6, it is possible to grasp the range of defocus allowed in the optical axis AX direction. It becomes. The unevenness information 22D may include information on the surface position (xyz coordinates) with respect to the entire wafer surface S2.

  Next, the mask pattern correction procedure in the mask pattern correction apparatus 2 of the present embodiment will be described with reference to FIG. FIG. 7 shows a flow when the mask pattern correction apparatus 2 according to the present embodiment corrects a mask pattern created based on the design pattern.

  First, the specific position information 22B is acquired for each different defocus condition (step S101). Here, when the specific position information 22B is stored in the storage unit 22, the specific position information 22B is read from the storage unit 22, and when the specific position information 22B is not stored in the storage unit 22, the specific position information By inputting the information 22B from the input unit 21, specific position information 22B is obtained.

  As a plurality of different defocus conditions, it is preferable to set some conditions between the maximum defocus condition used in the normal hot spot inspection and the defocus condition in the standard exposure condition. Since the maximum defocus amount in the normal hot spot inspection is the sum of the focus variation of the exposure apparatus 1 and the step of the wafer surface S2, the focus deviates more than the maximum defocus amount in the normal hot spot inspection. This is because it is not necessary to assume. For example, if the maximum defocus amount in normal hot spot inspection is ± 100 nm and the defocus amount in standard exposure conditions is 0 nm, four defocus conditions of ± 25 nm, ± 50 nm, and ± 75 nm are set. It is possible.

  In the above example, the defocus amount is set in increments of 25 nm. However, it is preferable to change the increment in accordance with the specifications required for the circuit pattern. Further, in order to shorten the hot spot inspection time, the hot spot inspection is first executed with the maximum defocus amount, and the portion corresponding to the xy coordinate of the wafer surface S2 which becomes the hot spot candidate P in the inspection and the vicinity thereof The hot spot inspection may be executed with a defocus amount smaller than the maximum defocus amount. In this way, at which position in the circuit pattern the hot spot candidate P is present, and at which defocus amount the hot spot candidate P becomes a hot spot (in other words, at which defocus amount it is no longer a hot spot) Becomes clear. Further, for each hot spot candidate P, the defect type (line width thickening, line width thinning, lack of overlapping area, etc.) may be derived.

  Next, the focus tolerance ΔF of the portion corresponding to the specific portion of the mask pattern created based on the design pattern is acquired (step S102). Here, when the focus margin ΔF is stored in the storage unit 22, the focus margin ΔF is read from the storage unit 22, and when the focus margin ΔF is not stored in the storage unit 22, the focus margin ΔF is read out. A focus margin ΔF is obtained by inputting the degree ΔF from the input unit 21. At this time, not only the portion corresponding to the specific portion, but also the focus margin ΔF for the entire mask pattern created based on the design pattern may be acquired.

  Next, the unevenness information 22D at a specific position is acquired (step S103). Here, when the unevenness information 22D is stored in the storage unit 22, the unevenness information 22D is read from the storage unit 22, and when the unevenness information 22D is not stored in the storage unit 22, the unevenness information 22D is input. By inputting from the unit 21, unevenness information 22D is obtained. At this time, not only the specific position but also the unevenness information 22D for the entire wafer surface S2 may be acquired.

  The unevenness information 22D of the wafer surface S2 can be derived by actually measuring the wafer surface S2 using an atomic force microscope or the like, but can also be derived using, for example, a CMP simulation.

  Next, as illustrated in FIG. 8, calculation of the setting condition of the stage 13 is attempted in consideration of the unevenness information 22D so that the focus surface (reference surface S1) of the projection optical system 12 falls within the focus tolerance ΔF. (Step S104).

  At this time, if the exposure apparatus 1 is a stepper, the setting conditions of the stage 13 are calculated so that the focus plane (reference plane S1) with respect to the shot area SH (see FIG. 2) falls within the focus margin ΔF. If the scanner is a scanner, the setting condition of the stage 13 is calculated so that the focus surface (reference surface S1) with respect to the exposed region L (see FIG. 3) falls within the focus margin ΔF. Specifically, the setting condition of the stage 13 is calculated so that the sum of squares of the deviation amount (defocus amount) at a specific position between the focus surface (reference surface S1) and the wafer surface S2 is minimized.

  Note that it is preferable to consider individual differences (machine differences) of the exposure apparatus 1 when calculating the setting conditions of the stage 13. The exposure apparatus 1 has individual differences in lens aberration, autofocus / autoleveling operation, flatness of the stage 13, and the like. For example, there is a focus shift at a specific location in the shot area SH or the exposed area L due to lens aberration. The focus shift of the wafer surface S2 can be measured, for example, by irradiating the wafer surface S2 to which the pattern has been transferred with scattered light (see JP 2006-228843 A). Using such a technique, individual differences of the exposure apparatus 1 are measured in advance, and stored in the storage unit 22 in a format such as a lookup table (Look Up Table: LUT), and the setting conditions of the stage 13 are calculated. At this time, it is possible to read the reference table and take into account individual differences of the exposure apparatus 1.

  Furthermore, instead of considering only individual differences of a specific exposure apparatus 1, individual differences for all the exposure apparatuses 1 to be used are obtained in advance using the above-described method, for example, averaging, Individual differences of all the exposure apparatuses 1 to be used may be considered by deriving an intermediate value (median) or a most frequent value (mode).

  Next, as a result of the calculation in the calculation step, as illustrated in FIG. 9, it is determined whether or not the focus surface (reference surface S1) is within the focus tolerance ΔF (step S105).

  As a result, when the focus surface (reference surface S1) is not within the focus tolerance ΔF, first, the portion corresponding to the specific portion of the design pattern is set so that the focus tolerance ΔF increases. In addition, the wiring width, the wiring shape, and the wiring interval of the portion where the focus surface (reference surface S1) does not fall within the focus tolerance ΔF (the portion corresponding to the two hot spot candidates P on the left side in FIG. 9) The space or the like is corrected (step S106). Next, steps S101 to S105 are performed using a mask having a mask pattern (hereinafter, simply referred to as “mask pattern after correction”) created by performing OPC processing on the design pattern after correction. Try again. Specifically, the specific position information 22B is reacquired for each different defocus condition (step S101), and a specific portion (a mask having a corrected mask pattern is used in the corrected mask pattern). A portion corresponding to a specific range exceeding a predetermined range (threshold 22E) in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface S2 when the mask pattern is transferred onto the wafer surface S2. Is acquired again (step S102), the unevenness information 22D at the specific position is acquired again (step S103), and the focus surface (reference surface S1) of the projection optical system 12 is within the focus tolerance ΔF. Then, the calculation of the setting condition of the stage 13 is tried again in consideration of the unevenness information 22D (step S104). It is determined again whether the dull surface (reference surface S1) is within the focus tolerance ΔF (step S105). If it is determined again that the focus surface (reference surface S1) is not within the focus tolerance ΔF, the focus surface (reference surface S1) is within the focus tolerance ΔF or the number of determinations is predetermined. Steps S101 to S105 are repeatedly executed until the number of times is exceeded.

  If it is determined again that the focus surface (reference surface S1) is not within the focus tolerance ΔF, steps S101 to S105 are repeatedly executed until the number of determinations exceeds a predetermined number. When the focus surface (reference surface S1) is within the focus tolerance ΔF, it is not necessary to recalculate the setting conditions of the stage 13. When the number of determinations exceeds a predetermined number, the design layout itself is corrected.

  In this way, the mask pattern is corrected in the mask pattern correction apparatus 2 of the present embodiment.

  In the mask pattern correction apparatus 2 of the present embodiment, the wafer surface S2 is arranged so that the focus surface (reference surface S1) of the projection optical system 12 falls within the focus tolerance ΔF of the portion corresponding to the specific portion of the mask pattern. Calculation of the setting condition of the stage 13 is attempted in consideration of the unevenness information 22D at the specific position. As a result, when the focus surface (reference surface S1) does not fall within the focus tolerance ΔF, the focus tolerance ΔF is In order to increase, the portion corresponding to the specific portion of the mask pattern and the portion where the focus surface (reference surface S1) is not within the focus margin ΔF is corrected. Thereby, a defocus amount (a reference surface S1 and a wafer surface S2) of a pattern that does not actually become a defect, for example, an exposed region to be exposed simultaneously (a shot region SH for a stepper and an exposed region L for a scanner). In the conventional case in which the reference plane S1 is set so that the difference between the pattern and the reference plane S1 is minimized, it is possible to eliminate the correction for the pattern regarded as a defect. As a result, even if there is a step on the wafer surface S2, it is possible to correct only a pattern that is not transferred correctly and becomes a defect, so that TAT (Turn Around Time) can be significantly improved. In addition, the area of the circuit pattern can be minimized.

[Modification of Second Embodiment]
In the second embodiment, the stage 13 is set so that the sum of squares of the deviation amount (defocus amount) at a specific position between the focus surface (reference surface S1) of the projection optical system 12 and the wafer surface S2 is minimized. Although the conditions were calculated, in step S102, the focus margin ΔF is acquired not only for the part corresponding to the specific part but also for the entire mask pattern created based on the design pattern. In step S103, only the specific position is obtained. If the unevenness information 22D for the entire wafer surface S2 is acquired, the deviation amount (defocus amount) of the entire wafer surface S2 between the focus surface (reference surface S1) of the projection optical system 12 and the wafer surface S2 is further acquired. The setting condition of the stage 13 is also calculated so that the sum of squares is minimized, and the focus plane (reference plane S1) of the projection optical system 12 is calculated. And the sum of squares of a deviation amount (defocus amount) at a specific position between the wafer surface S2 and a deviation amount (defocus) of the entire wafer surface S2 between the focus surface (reference surface S1) of the projection optical system 12 and the wafer surface S2. The setting condition of the stage 13 may be calculated so that the sum of squares of (amount) is as small as possible. In this case, the design margin (the difference between the focus surface (reference surface S1) and the upper limit or lower limit of the focus tolerance ΔF) of the portion corresponding to the portion other than the hot spot candidate P in the wafer surface S2 is increased. can do.

  However, since the number of hot spot candidates P is usually smaller than the number of non-hot spot candidates P, the amount of deviation at a specific position between the focus surface (reference surface S1) of the projection optical system 12 and the wafer surface S2. The sum of squares of (defocus amount) and the sum of squares of the total deviation amount (defocus amount) of the wafer surface S2 from the focus surface (reference surface S1) of the projection optical system 12 and the wafer surface S2 are simply added. As a result, the defocus amount of the hot spot candidate P is underestimated. Therefore, it is preferable to evaluate each sum of squares with some weighting. At this time, normalization may be performed when each sum of squares is minimized, and each defocus amount may be evaluated by further weighting.

[Third Embodiment]
FIG. 10 shows a schematic configuration of the exposure condition setting apparatus 3 of the present embodiment. The exposure condition setting device 3 is for setting the exposure conditions of the exposure device 1 and includes a calculation unit 20, an input unit 21, a storage unit 32, and an output unit 33.

  The storage unit 32 stores various data used in this program in addition to the exposure condition setting program 32A that causes the calculation unit 20 to execute an exposure condition setting procedure described later. Specifically, the specific position information 22B, the focus tolerance information 22C, the unevenness information 22D, the threshold value 22E, and the like are stored as in the second embodiment. If the specific position information 22B, the focus tolerance information 22C, the unevenness information 22D, and the threshold value 22E are not stored in the storage unit 32 in advance, these may be input from the input unit 21 as needed. . The output unit 33 is for transferring the derived setting conditions of the stage 13 to the exposure apparatus 1.

  Next, with reference to FIG. 11, an exposure condition setting procedure in the exposure condition setting apparatus 3 of the present embodiment will be described. In addition, FIG. 11 represents the flow at the time of setting the exposure conditions in the exposure condition setting apparatus 3 of the present embodiment. In the following, description of contents overlapping with the description in the second embodiment will be omitted as appropriate.

  First, after acquiring the specific position information 22B for each different defocus condition (step S201), the focus tolerance ΔF of the portion corresponding to the specific portion of the mask pattern created based on the design pattern is acquired (step S201). Step S202).

  Next, after acquiring the unevenness information 22D at a specific position (step S203), as illustrated in FIG. 8, the unevenness is set so that the focus surface (reference surface S1) of the projection optical system 12 falls within the focus margin ΔF. The setting conditions for the stage 13 are derived in consideration of the information 22D (step S204). At this time, if the condition that the focus surface (reference surface S1) of the projection optical system 12 falls within the focus tolerance ΔF cannot be derived, the same procedure as in the second embodiment ( Steps S105 and S106) are performed.

  Next, the derived setting conditions of the stage 13 are transferred to the exposure apparatus 1 and a command for instructing the autofocus sensor 14 to measure the wafer surface position is transferred to the exposure apparatus 1 (step S205). Then, after these are received by the exposure apparatus 1, the wafer surface position (wafer surface S 2 ′) is measured by the autofocus sensor 14 (see FIG. 12), and the measurement result is transferred to the exposure condition setting apparatus 3. The Thereafter, the exposure condition setting device 3 receives the wafer surface position measured by the exposure device 1 at the input unit 21.

  In addition, although the unevenness information 22D has already been acquired, the wafer surface position is measured again by the autofocus sensor 14 because, for example, the unevenness information 22D is slightly offset due to variations in fixing the wafer W to the stage 13. This is to correct the offset when this occurs.

  Next, the wafer surface position (wafer surface S2 ') measured by the exposure apparatus 1 and the unevenness information 22D are combined to derive new unevenness information 22F (step S206).

  Next, calculation of the setting condition of the stage 13 is attempted again in consideration of the unevenness information 22F so that the focus surface (reference surface S1 ') of the projection optical system 12 falls within the focus tolerance ΔF (step S207). At this time, if the condition that the focus surface (reference surface S1) of the projection optical system 12 falls within the focus tolerance ΔF cannot be derived, the same procedure as in the second embodiment ( Steps S105 and S106) are performed (Steps S208 and S209). Thereafter, the exposure conditions are transferred to and stored in the exposure apparatus 1. In this way, the exposure conditions are set in the exposure condition setting device 3 of the present embodiment.

  In the exposure condition setting apparatus 3 according to the present embodiment, the wafer surface S2 is arranged so that the focus surface (reference surface S1) of the projection optical system 12 falls within the focus tolerance ΔF of the portion corresponding to the specific portion of the mask pattern. The setting condition of the stage 13 is derived in consideration of the unevenness information 22F at the specific position. Thereby, generation | occurrence | production of the pattern used as a defect can be eliminated. As a result, even if there is a step on the wafer surface S2, it is possible to set exposure conditions that reduce the occurrence of patterns that are not transferred correctly and become defects.

  While the present invention has been described with reference to the embodiments and the modifications thereof, the present invention is not limited to these embodiments and the like, and various modifications can be made.

1 is a schematic block diagram of an exposure apparatus according to a first embodiment of the present invention. It is a top view of the wafer of FIG. It is a schematic diagram for demonstrating the measurement point of the autofocus sensor of FIG. It is a schematic diagram for demonstrating a reference surface and a wafer surface. It is a schematic block diagram of the mask pattern correction apparatus which concerns on the 2nd Embodiment of this invention. It is a schematic diagram for demonstrating a hot spot candidate and focus tolerance. It is a flowchart for demonstrating the mask pattern correction procedure in the mask pattern correction apparatus of FIG. It is one schematic diagram for demonstrating the setting method of a reference plane. It is another schematic diagram for demonstrating the setting method of a reference plane. It is a schematic block diagram of the exposure condition setting apparatus which concerns on the 3rd Embodiment of this invention. It is a flowchart for demonstrating the exposure condition setting procedure in the exposure condition setting apparatus of FIG. It is a schematic diagram for demonstrating the offset adjustment of exposure apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Exposure apparatus, 2 ... Mask pattern correction apparatus, 3 ... Exposure condition setting apparatus, 10 ... Illumination optical system, 11 ... Mask, 12 ... Reduction projection optical system, 13 ... Stage, 14 ... Autofocus sensor, 14A ... Light emission part , 14B ... detection unit, 15 ... control unit, 16, 22, 32 ... storage unit, 16A ... control program, 16B ... process parameter, 20 ... calculation unit, 21 ... input unit, 22A ... mask pattern correction program, 22B ... specification Position information, 22C: Focus tolerance information, 22D: Concavity and convexity information, 22E ... Threshold value, 32A ... Exposure condition setting program, AF ... Measurement point, L ... Exposure area, P ... Hot spot candidate, S1 ... Reference plane, S2 ... Wafer Surface, SH: shot region, W: wafer, ΔF: focus tolerance.

Claims (17)

A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, A mask pattern correction method for correcting the mask pattern used in an exposure apparatus that transfers an image of a mask pattern onto the wafer surface,
When a mask pattern is transferred onto the wafer surface using the mask, a transfer image formed on the wafer surface corresponds to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size. A first acquisition step of acquiring a specific position on the wafer surface for each different defocus condition;
A second acquisition step of acquiring a focus tolerance of a portion corresponding to the specific portion of the mask pattern;
A third acquisition step of acquiring unevenness information of the specific position;
A calculation step of trying to calculate the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus tolerance;
As a result of the calculation in the calculation step, when the focus surface does not fall within the focus margin, the portion corresponding to the specific portion of the mask pattern so as to increase the focus margin, And a correction step of correcting a portion where the focus surface does not fall within the focus tolerance. 2. The mask pattern correction method according to claim 1, wherein, in the calculation step, a setting condition of the adjustment mechanism is calculated for each exposure area simultaneously exposed by the exposure apparatus on the wafer surface. 2. The mask according to claim 1, wherein, in the calculation step, a setting condition of the adjustment mechanism is calculated so that a sum of squares of a deviation amount at the specific position between the focus surface and the wafer surface is minimized. Pattern correction method. In the second acquisition step, the focus margin of all portions of the mask pattern is separately acquired,
In the third acquisition step, the uneven information on the entire wafer surface is separately acquired,
In the calculation step, a sum of squares of a deviation amount at the specific position between the focus surface and the wafer surface and a sum of squares of a deviation amount of the entire wafer surface between the focus surface and the wafer surface are as small as possible. The mask pattern correction method according to claim 1, wherein the setting condition of the adjustment mechanism is calculated as follows. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, A mask pattern correction program for correcting the mask pattern used in an exposure apparatus that transfers an image of a mask pattern onto the wafer surface,
When a mask pattern is transferred onto the wafer surface using the mask, a transfer image formed on the wafer surface corresponds to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size. A first acquisition step of acquiring a specific position on the wafer surface for each different defocus condition;
A second acquisition step of acquiring a focus tolerance of a portion corresponding to the specific portion of the mask pattern;
A third acquisition step of acquiring unevenness information of the specific position;
A calculation step of trying to calculate the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus tolerance;
As a result of the calculation in the calculation step, if the focus surface does not fall within the focus margin, the portion corresponding to the specific portion of the mask pattern so as to increase the focus margin, And a correction step of correcting a portion where the focus surface does not fall within the focus tolerance. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, A mask pattern correction apparatus for correcting the mask pattern used in an exposure apparatus that transfers an image of a mask pattern onto the wafer surface,
When a mask pattern is transferred onto the wafer surface using the mask, a transfer image formed on the wafer surface corresponds to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size. A first acquisition unit for acquiring a specific position on the wafer surface for each different defocus condition;
A second acquisition unit that acquires a focus tolerance of a portion corresponding to the specific portion of the mask pattern;
A third acquisition unit that acquires unevenness information of the specific position;
A calculation unit that attempts to calculate the setting condition of the adjustment mechanism in consideration of the unevenness information so that the focus plane of the projection optical system falls within the focus tolerance;
As a result of calculation in the calculation unit, if the focus surface does not fall within the focus tolerance, the portion corresponding to the specific part of the mask pattern so that the focus tolerance increases, And a pattern correction unit that corrects a portion of the focus surface that does not fall within the focus tolerance. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, An exposure condition setting method for setting an exposure condition in an exposure apparatus that transfers an image of a mask pattern onto the wafer surface,
When a mask pattern is transferred onto the wafer surface using the mask, a transfer image formed on the wafer surface corresponds to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size. A first acquisition step of acquiring a specific position on the wafer surface for each different defocus condition;
A second acquisition step of acquiring a focus tolerance of a portion corresponding to the specific portion of the mask pattern;
A third acquisition step of acquiring unevenness information of the specific position;
A first derivation step of deriving a setting condition of the adjustment mechanism in consideration of the unevenness information so that a focus surface of the projection optical system falls within the focus tolerance. . The exposure condition setting method according to claim 7, further comprising a transfer step of transferring the unevenness information and setting conditions of the adjustment mechanism to the exposure apparatus. A fourth acquisition step of acquiring a focus position of the wafer surface with the exposure apparatus;
A second derivation step for newly deriving the unevenness information of the specific position from the unevenness information and the focus position information;
And a third derivation step for deriving a setting condition of the focus surface in consideration of the unevenness information derived in the second derivation step so that the focus surface of the projection optical system falls within the focus tolerance. 9. The exposure condition setting method according to claim 7, wherein the exposure condition is set. 10. The setting condition of the adjustment mechanism is derived for each exposure area simultaneously exposed by the exposure apparatus on the wafer surface in the derivation step. 10. The exposure condition setting method as described. 10. The setting condition of the adjustment mechanism is derived in the derivation step so that the sum of squares of the deviation amount at the specific position between the focus surface and the wafer surface is minimized. The exposure condition setting method according to any one of the above. In the second acquisition step, the focus margin of all portions of the mask pattern is separately acquired,
In the third acquisition step, the uneven information on the entire wafer surface is separately acquired,
In the derivation step, a sum of squares of the deviation amount between the focus surface and the wafer surface at the specific position and a sum of squares of the deviation amount of the entire wafer surface between the focus surface and the wafer surface are as small as possible. The exposure condition setting method according to any one of claims 7 to 9, wherein the setting condition of the stage is derived as follows. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, An exposure condition setting program for setting an exposure condition in an exposure apparatus that transfers an image of a mask pattern onto the wafer surface,
When a mask pattern is transferred onto the wafer surface using the mask, a transfer image formed on the wafer surface corresponds to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size. A first acquisition step of acquiring a specific position on the wafer surface for each different defocus condition;
A second acquisition step of acquiring a focus tolerance of a portion corresponding to the specific portion of the mask pattern;
A third acquisition step of acquiring unevenness information of the specific position;
An exposure condition setting characterized by causing the computer to execute a derivation step of deriving a setting condition of the adjustment mechanism in consideration of the unevenness information so that a focus surface of the projection optical system falls within the focus tolerance program. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, An exposure condition setting device for setting an exposure condition in an exposure device that transfers an image of a mask pattern onto the wafer surface,
When a mask pattern is transferred onto the wafer surface using the mask, a transfer image formed on the wafer surface corresponds to a specific portion exceeding a predetermined range in relation to a pattern having a desired shape and size. A first acquisition unit for acquiring a specific position on the wafer surface for each different defocus condition;
A second acquisition unit that acquires a focus tolerance of a portion corresponding to the specific portion of the mask pattern;
A third acquisition unit that acquires unevenness information of the specific position;
An exposure condition setting apparatus comprising: a derivation unit that derives a setting condition of the adjustment mechanism in consideration of the unevenness information so that a focus surface of the projection optical system falls within the focus tolerance. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, A manufacturing process of manufacturing a semiconductor device using an exposure apparatus that transfers an image of a mask pattern onto the wafer surface;
The setting condition of the adjustment mechanism is a predetermined condition in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using the mask. The focus surface of the projection optical system is the position of the mask pattern in consideration of the unevenness information at the specific position which is the position of the wafer surface corresponding to the specific part exceeding the range and is acquired for each different defocus condition. Of these, the semiconductor device manufacturing method is derived so as to fall within a focus tolerance of a portion corresponding to the specific portion. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, A program for manufacturing a semiconductor device, characterized by causing a computer to execute manufacturing of a semiconductor device using an exposure apparatus that transfers an image of a mask pattern onto the wafer surface,
The setting condition of the adjustment mechanism is a predetermined condition in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using the mask. The focus surface of the projection optical system is the position of the mask pattern in consideration of the unevenness information at the specific position which is the position of the wafer surface corresponding to the specific part exceeding the range and is acquired for each different defocus condition. A program for manufacturing a semiconductor device, wherein the program is derived so as to fall within a focus tolerance of a portion corresponding to the specific portion. A projection optical system for projecting an image of the mask pattern onto a wafer surface using a mask having a mask pattern created based on a design pattern, and an adjustment mechanism for adjusting a focus position on the wafer surface, A manufacturing unit that manufactures a semiconductor device using an exposure apparatus that transfers an image of a mask pattern onto the wafer surface;
The setting condition of the adjustment mechanism is a predetermined condition in relation to a pattern having a desired shape and size in a transfer image formed on the wafer surface when the mask pattern is transferred onto the wafer surface using the mask. The focus surface of the projection optical system is the position of the mask pattern in consideration of the unevenness information at the specific position which is the position of the wafer surface corresponding to the specific part exceeding the range and is acquired for each different defocus condition. Of these, the semiconductor device manufacturing apparatus is derived so as to fall within a focus tolerance of a portion corresponding to the specific portion.

Images