JP5024137B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more specifically, a semiconductor including a plurality of electrode pads, protruding electrodes provided on the plurality of electrode pads, and an underfill resin disposed between the protruding electrodes. The present invention relates to a device manufacturing method.

  In recent years, in order to enable high-density mounting of a semiconductor device including a semiconductor chip and a circuit board, a flip chip connection structure using bump electrodes called bumps has been widely adopted (see FIG. 1).

  Referring to FIG. 1, a conventional semiconductor device 10 includes a semiconductor chip 11, a circuit board 12, bumps 13 that are protruding electrodes, and an underfill resin 14.

  The semiconductor chip 11 has a plurality of electrode pads 16. The semiconductor chip 11 is flip-chip connected to the circuit board 12. The circuit board 12 has a plurality of pads 17 that are electrically connected to the semiconductor chip 11. The bump 13 has one end connected to the electrode pad 16 and the other end connected to the pad 17. For example, solder bumps can be used as the bumps 13.

  The underfill resin 14 is disposed so as to fill a gap between the semiconductor chip 11 and the circuit board 12. After the semiconductor chip 11 is mounted on the circuit board 12, the underfill resin 14 is filled with a resin (resin containing a solvent) serving as a base material of the underfill resin 14 in the gap between the semiconductor chip 11 and the circuit board 12. The resin is semi-cured (at this time, the solvent contained in the resin is volatilized).

  In recent years, methods for forming the underfill resin 14 more easily than the above methods include the methods shown in FIGS.

  A conventional method for manufacturing the semiconductor device 10 will be described with reference to FIGS. First, in the process shown in FIG. 2, bumps 13 are formed on the electrode pads 16 of the semiconductor chip 11.

  Next, in the process shown in FIG. 3, a resin (resin containing a solvent) that is a base material of the underfill resin 14 is formed on the semiconductor chip 11 by a method such as spin coating, coating, or printing. Subsequently, the underfill resin 14 is formed by volatilizing the solvent contained in the resin and semi-curing the resin. At this time, as shown in FIG. 3, when the end surface 13 </ b> A of the bump 13 (portion connected to the pad 17 of the circuit board 12) covers the underfill resin 14, the underfill resin 14 formed on the end surface 13 </ b> A of the bump 13. Remove. Thereby, the semiconductor chip 20 with the underfill resin in which the underfill resin 14 is formed on the semiconductor chip 11 is formed.

Next, in the process shown in FIG. 4, the semiconductor chip 20 with underfill resin shown in FIG. 3 is turned upside down, the bumps 13 are remelted, and the bumps 13 and the pads 17 of the circuit board 12 are thermocompression bonded (with underfill resin attached). The semiconductor chip 20 is mounted on the circuit board 12). Thereafter, the underfill resin 14 is heated at a temperature lower than the remelting temperature of the bump 13 to completely cure the underfill resin 14. Thereby, the conventional semiconductor device 10 is manufactured (for example, refer patent document 1).
Japanese Patent No. 3558576

  However, in the conventional method for manufacturing the semiconductor device 10, it is difficult to form the underfill resin 14 so as to expose the end face 13 </ b> A of the bump 13. Therefore, since it is necessary to perform a process (for example, a plasma processing process) for removing the underfill resin 14 formed on the end surface 13A of the bump 13, the manufacturing cost of the semiconductor device 10 increases. This problem becomes prominent when the amount of the resin serving as the base material of the underfill resin 14 is large.

  5 and 6 are diagrams for explaining problems of the conventional method for manufacturing a semiconductor device. 5 and 6, the same components as those of the conventional semiconductor device 10 are denoted by the same reference numerals.

  As shown in FIG. 5, when the amount of the resin used as the base material of the underfill resin 14 is reduced and the resin is semi-cured, the volume shrinkage of the resin formed between the bumps 13 (specifically, included in the resin) Volume shrinkage due to a decrease in solvent components). Therefore, a step is formed between the end surface 13A of the bump 13 and the surface 14A of the underfill resin 14 formed between the bumps.

  When the semiconductor chip 20 with the underfill resin having such a step is mounted on the circuit board 12, voids 21 are formed between the pads 17, as shown in FIG. When such a void 21 is formed, a short circuit occurs between the bumps 13 due to the remelted bumps 13 flowing into the voids 21, or the bumps are reduced due to a decrease in adhesion between the semiconductor chip 11 and the circuit board 12. The bonding strength between the pad 13 and the pad 17 is reduced. Therefore, there is a problem that the reliability of electrical connection between the semiconductor chip 11 and the circuit board 12 is lowered.

  Therefore, the present invention has been made in view of the above points, and can reduce the manufacturing cost of a semiconductor device and improve the reliability of electrical connection between a semiconductor chip and a circuit board. It is an object of the present invention to provide a method for manufacturing a device.

According to an aspect of the present invention, a step of forming a plurality of protruding electrodes on a surface of a substrate, a plate body having a plurality of recessed portions on the surface, the recessed portions are aligned between the plurality of protruding electrodes, A step of bringing the surface of the plate body into contact with the protruding electrode, a step of filling a resin between the substrate and the plate body and in the recess, and semi-curing the resin, and after the resin is semi-cured And a step of removing the plate body. A method of manufacturing a semiconductor device is provided.

  According to the present invention, it is possible to provide a method for manufacturing a semiconductor device that can reduce the manufacturing cost of the semiconductor device and improve the reliability of electrical connection between the semiconductor chip and the circuit board.

  Embodiments of the present invention will be described below.

(First embodiment)
A method for manufacturing the semiconductor device 100 according to the first embodiment will be described with reference to FIGS. In the present embodiment, the following description is given by taking as an example the case where the semiconductor chip 101 is used as the substrate on which the plurality of protruding electrodes 103 are formed.

  First, in the process shown in FIG. 7, a semiconductor chip 101 (semiconductor element) having a plurality of electrode pads 102 arranged at a predetermined pitch is prepared, and the protruding electrodes 103 are formed on the upper surfaces of the plurality of electrode pads 102. . Although not shown, the semiconductor chip 101 includes a semiconductor substrate and a semiconductor integrated circuit formed on the semiconductor substrate. The plurality of electrode pads 102 are electrically connected to the semiconductor integrated circuit.

  The arrangement pitch of the electrode pads 102 can be set to 250 μm, for example. The external size of the semiconductor chip 101 configured as described above can be set to, for example, a 15 mm square. As the protruding electrode 103, for example, a bump (specifically, for example, a solder bump) can be used. When a solder bump is used as the protruding electrode 103, the diameter of the protruding electrode 103 can be set to 100 μm, for example.

  Next, in the process shown in FIG. 8, a plate 105 having a plurality of recesses 106 on the surface 105A is prepared. The plate body 105 is used when a resin 108 (resin containing a solvent) serving as a base material of the underfill resin 109 is formed on the surface 101A of the semiconductor chip 101 on the side where the electrode pads 102 are formed (FIG. 5). 10). When the resin 108 is filled, the plate body 105 is disposed on the end face 103A of the protruding electrode 103 provided in the structure shown in FIG. 7 (see FIG. 9). The resin 108 is filled between the semiconductor chip 101 and the plate body 105 (see FIG. 10).

  The recess 106 is formed in the plate body 105 at a portion of the surface 101A of the semiconductor chip 101 that faces the surface 101A located between the protruding electrodes 103. The recess 106 is a space for placing an extra resin 108 as a base material of the underfill resin 109 between the protruding electrodes 103 (see FIG. 10).

  Thus, by forming the concave portion 106 in which the resin 108 serving as the base material of the underfill resin 109 is formed in the portion of the plate body 105 located between the protruding electrodes 103, the gap between the semiconductor chip 101 and the plate body 105 is formed. When the filled resin 108 is semi-cured, the upper surface of the underfill resin 109 formed between the protruding electrodes 103 and the end surface 103A of the protruding electrode 103 can be substantially flush (see FIG. 11).

  As the recess 106, for example, a plurality of openings (for example, holes) may be formed, or a groove may be formed. Or you may form the recessed part 106 combining an opening part and a groove | channel. When a groove is used as the recess 106, for example, a quadrangle, a V-shape, a semi-elliptical shape, or the like can be used as the cross-sectional shape of the groove. In FIG. 8, a case where the cross-sectional shape of the groove is a square is shown as an example. When a groove having a square cross-sectional shape is used as the recess 106, for example, the groove width may be 100 μm and the groove depth may be 10 μm.

  Thus, by using a groove as the recess 106, it becomes possible to dispose a sufficient amount of the resin 108 in the recess 106, and it is possible to easily introduce the resin 108 into the recess 106 compared to the opening. it can.

  Further, in the step shown in FIG. 8, the surface of the plate 105 where the recess 106 is formed may be made hydrophilic. As a result, the resin 108 as the base material of the underfill resin 109 can be easily introduced into the recess 106A.

  Further, in the step shown in FIG. 8, hydrophilicity may be imparted to the surface 105A where the recess 106 is formed, and where the recess 106 is not formed. Thereby, the resin 108 serving as a base material of the underfill resin 109 can be more easily introduced into the gap between the semiconductor chip 101 and the plate body 105. As a method for making the plate 105 hydrophilic, for example, a method of irradiating plasma, a method of applying a surfactant (for example, a silane coupling agent), or the like may be used.

  As a material of the plate 105 having the above-described configuration, for example, metal (for example, stainless steel), Teflon (registered trademark), or the like can be used.

  Next, in the step shown in FIG. 9, the concave portion 106 is positioned between the protruding electrodes 103, the surface 105 </ b> A of the plate body 105 is brought into contact with the protruding electrodes 103, and the plate body 105 is disposed on the protruding electrodes 103. Thereby, the surface 105 </ b> A of the plate body 105 and the end surface 103 </ b> A of the protruding electrode 103 come into contact with each other.

  In this way, by bringing the end surface 103A of the protruding electrode 103 into contact with the surface 105A of the plate body 105, the resin 108 is formed on the end surface 103A of the protruding electrode 103 when filling the resin 108 in the process shown in FIG. It will not be done. This eliminates the need for the step of removing the underfill resin 109 formed on the end face 103A of the bump electrode 103, which has been necessary in the past, so that the manufacturing cost of the semiconductor device 100 can be reduced.

  Next, in the step shown in FIG. 10, a liquid resin 108 serving as a base material of the underfill resin 109 is filled in a gap between the semiconductor chip 101 and the plate body 105. Specifically, for example, the resin 108 is supplied from the dispenser 107, and the space between the semiconductor chip 101 and the plate body 105 is filled with the resin 108 by capillary action. At this time, the recess 108 is also filled with the resin 108. The resin 108 is a resin containing a solvent. For example, a thermosetting epoxy resin may be used as the liquid resin 108.

  In this way, by filling the gap between the semiconductor chip 101 and the plate body 105 with the resin 108 by capillary action, it is possible to suppress the generation of voids between the semiconductor chip 101 and the plate body 105.

  Further, for example, the resin 108 is formed on the surface 101A of the semiconductor chip 101 and / or the surface 105A (including the recess 106) of the semiconductor chip 101 by a method such as a spin coating method or a screen printing method (a method that does not use capillary action). Then, the resin 108 may be formed between the semiconductor chip 101 and the plate 105 by disposing the semiconductor chip 101 and the plate 105 so as to face each other. In this case, since there is a possibility that a void is generated between the semiconductor chip 101 and the plate body 105, it is preferable to perform vacuum defoaming after the semiconductor chip 101 and the plate body 105 are arranged to face each other.

  Next, in the step shown in FIG. 11, the underfill resin 109 is formed between the semiconductor chip 101 and the plate body 105 by semi-curing the resin 108 shown in FIG. 10.

  At this time, by volatilizing the solvent contained in the resin 108, the volume of the resin 108 disposed between the protruding electrodes 103 decreases. However, since the resin 108 disposed in the recess 106 compensates for this decrease, The upper surface 109A of the resin 109 can be substantially flush with the end surface 103A of the protruding electrode 103. When the resin 108 is a thermosetting resin, the resin 108 is semi-cured by, for example, leaving the structure shown in FIG. 10 in a thermostatic chamber heated to 100 ° C. for 15 minutes.

  The volume and shape of the recess 106 are preferably formed so that the upper surface 109A of the underfill resin 109 and the end surface 103A of the protruding electrode 103 are substantially flush with each other. Further, the volume and shape of the recess 106 may be appropriately selected in consideration of the characteristics of the resin 108 that is a base material of the underfill resin 109.

  Next, in the step shown in FIG. 12, the plate 105 shown in FIG. 11 is removed from the semi-cured underfill resin 109. Specifically, the plate body 105 is removed from the underfill resin 109. Thereby, the semiconductor chip 110 with the underfill resin including the semiconductor chip 101, the protruding electrode 103, and the semi-cured underfill resin 109 is formed.

  Next, in the step shown in FIG. 13, the bump electrode 103 provided on the semiconductor chip 110 with underfill resin and the pad 113 provided on the circuit board 112 are joined (the semiconductor chip 110 with underfill resin is attached to the circuit board 112. The underfill resin 109 is completely cured. As a method for joining the protruding electrode 103 and the pad 113, for example, a thermocompression bonding method (in this case, heating to 250 ° C.), a reflow method, or the like can be used. Thereby, the semiconductor device 100 of the first embodiment is manufactured.

  As described above, the semiconductor chip 101 and the circuit board 112 are mounted by mounting the semiconductor chip 110 with the underfill resin in which the upper surface 109A of the underfill resin 109 and the end face 103A of the protruding electrode 103 are substantially flush with each other on the circuit board 112. Since no void is generated between the semiconductor chip 101 and the circuit board 112, the reliability of electrical connection between the semiconductor chip 101 and the circuit board 112 can be improved.

  According to the manufacturing method of the semiconductor device of the present embodiment, the plate body 105 provided with the recess 106 in the portion located between the protruding electrodes 103 is disposed on the protruding electrode 13, and the gap between the semiconductor chip 101 and the plate body 105. The underfill resin 109 is formed by filling the liquid resin 108 (including the recesses 106) and semi-curing the resin 108, so that the upper surface 109A of the underfill resin 109 and the end surface 103A of the protruding electrode 103 are substantially formed. It is possible to form the semiconductor chip 110 with the underfill resin that is flush with the surface. Thereby, when the semiconductor chip 110 with the underfill resin is mounted on the circuit board 112, no void is generated between the semiconductor chip 101 and the circuit board 112. Electrical connection reliability can be improved.

  Further, the resin 108 is not formed on the end surface 103A of the protruding electrode 103 by bringing the end surface 103A of the protruding electrode 103 into contact with the surface 105A of the plate body 105. This eliminates the need for the step of removing the underfill resin 109 formed on the end face 103A of the bump electrode 103, which has been necessary in the past, so that the manufacturing cost of the semiconductor device 100 can be reduced.

  In the present embodiment, the case where the underfill resin 109 is formed on the semiconductor chip 101 has been described as an example. However, the semiconductor substrate (by the same method as the steps shown in FIGS. For example, the underfill resin 109 may be formed on a substrate on which a plurality of semiconductor chips 101 are formed on a silicon wafer or the like. In this case, the same effect as that of the present embodiment can be obtained.

[Void evaluation]
In order to evaluate voids of the semiconductor device 100 manufactured by the method of manufacturing a semiconductor device of the present embodiment, three semiconductor devices A, B, and C were manufactured under the following conditions.

  In the semiconductor device A (Example), solder bumps of φ100 μm are arranged as bump electrodes 103 on the electrode pads 102 of a 15 mm square semiconductor chip 101 at a pitch of 250 μm, and then the recesses 106 have a quadrangular cross section (width of 100 μm, A plate body 105 (made of Teflon (registered trademark)) in which grooves having a depth of 10 μm are formed is placed on the solder bumps, and then a resin 108 is placed between the semiconductor chip 101 and the plate body 105 by a capital flow. Filled, and then left in a constant temperature bath (temperature of 100 ° C.) for 15 minutes to form a semi-cured underfill resin 109, and then removed from the constant temperature bath and the plate body 105 is removed from the underfill resin 109 and the underfill resin 109 is removed. A semiconductor chip 110 with a fill resin is formed, and this is applied to a 42.5 mm square resin substrate, which is a circuit board 112. It was produced by charging (heating temperature 250 ° C.).

  In the semiconductor device B (example), the resin 108 is formed on the surface 101A of the semiconductor chip 101 and the recess 106 of the plate body 105 by using a screen printing method, and then the plate body 105 is disposed on the protruding electrode 103. The semiconductor device A was manufactured by the same method as that of the semiconductor device A except that. The resin 108 formed on the semiconductor chip 101 is adjusted so that the upper surface of the resin 108 formed on the surface 101A of the semiconductor chip 101 and the end surface 103A of the protruding electrode 103 are substantially equal.

  The semiconductor device C (comparative example) was manufactured by a method similar to the manufacturing method of the semiconductor device A, using a flat plate having no recess 106 instead of the plate body 105 used when the semiconductor device A was manufactured.

  When the presence or absence of voids in the semiconductor devices A, B, and C manufactured by the above method was evaluated using an ultrasonic imaging device (SAT), the semiconductor devices A and B included between the semiconductor chip 101 and the circuit board 112. In the semiconductor device C, 1% of voids with respect to the area of the semiconductor chip 101 could be confirmed.

  From this result, it was confirmed that the formation of the void between the semiconductor chip 101 and the circuit board 112 can be prevented by forming the underfill resin 109 using the plate body 105 having the recess 106.

(Second Embodiment)
A method for manufacturing the semiconductor device 115 according to the second embodiment will be described with reference to FIGS. First, the structure shown in FIG. 7 described in the first embodiment is formed. In the subsequent step shown in FIG. 14, the flux 116 (flux containing a solvent) is applied to the end surface 103A of the protruding electrode 103 provided in the structure shown in FIG. 7 (the protruding electrode 103 in contact with the upper surface 105A of the plate 105). Form. Specifically, for example, a flux 116 having a thickness of 20 μm is formed on a flat plate (the material is stainless steel, for example) by squeegee printing, and then the flat plate is placed so that the flux 116 and the end surface 103A of the protruding electrode 103 are in contact with each other. The flux 116 is formed on the end face 103 </ b> A of the protruding electrode 103 by being pressed against the protruding electrode 103.

  As described above, the flux 116 is formed on the end surface 103A of the protruding electrode 103 before the step of bringing the surface 105A of the plate body 105 into contact with the end surface 103A of the protruding electrode 103, thereby forming the base material of the underfill resin 109. When filling the resin 108, the resin 108 is not formed on the end face 103 </ b> A of the protruding electrode 103. This eliminates the need for the step of removing the underfill resin 109 formed on the end surface 103A of the bump electrode 103, which has been necessary in the past, so that the manufacturing cost of the semiconductor device 115 can be reduced.

  After that, the plate body 105 having the recess 106 is formed by performing the process shown in FIG. 8 described in the first embodiment.

  Next, in the step shown in FIG. 15, the concave portion 106 is aligned between the protruding electrodes 103, and the surface 105 A of the plate body 105 and the upper surface 116 A of the flux 116 are brought into contact with each other.

  Next, in the process shown in FIG. 16, the same process as the process shown in FIG. 10 described in the first embodiment is performed, so that the space between the semiconductor chip 101 and the plate body 105 (including the recess 106) Filled with a resin 108 as a base material of the fill resin 109.

  Next, in the process shown in FIG. 17, the resin 108 shown in FIG. 16 is semi-cured to form a semi-cured underfill resin 109 between the semiconductor chip 101 and the plate body 105. Specifically, when the resin 108 is a thermosetting resin, for example, the structure shown in FIG. 16 is left in a thermostatic chamber heated to 100 ° C. for 15 minutes to be in a semi-cured underfill resin 109. Form.

  At this time, since the volume of the resin 108 is reduced by volatilizing the solvent contained in the resin 108, the position of the upper surface of the resin 108 in the portion arranged between the protruding electrodes 103 moves downward. Since the resin 108 disposed in the recess 106 compensates for the decrease in the resin 108 in the portion disposed in the upper surface 109, the upper surface 109 A of the underfill resin 109 can be substantially flush with the upper surface 116 A of the flux 116. At this time, the solvent contained in the flux 116 is also volatilized. The process shown in FIGS. 16 and 17 described above is a process corresponding to a resin curing process.

  Next, in the step shown in FIG. 18, the plate body 105 shown in FIG. 17 is removed from the semi-cured underfill resin 109. Specifically, the plate body 105 is removed from the underfill resin 109. Thereby, the semiconductor chip 120 with the underfill resin including the semiconductor chip 101, the protruding electrode 103, the semi-cured underfill resin 109, and the flux 116 is formed.

  Next, in the step shown in FIG. 19, the bump electrode 103 provided on the semiconductor chip 120 with the underfill resin and the pad 113 provided on the circuit board 112 are bonded via the flux 116 (the semiconductor chip with the underfill resin). 120 is mounted on the circuit board 112), and the underfill resin 109 is completely cured. As a method for joining the protruding electrode 103 and the pad 113, for example, a thermocompression bonding method (in this case, heating to 250 ° C.), a reflow method, or the like can be used. Thereby, the semiconductor device 115 of the second embodiment is manufactured.

  Thus, by mounting the semiconductor chip 120 with the underfill resin in which the upper surface 109A of the underfill resin 109 and the upper surface 116A of the flux 116 are substantially flush with each other on the circuit board 112, the semiconductor chip 101, the circuit board 112, and No voids are generated during this period. Therefore, the reliability of electrical connection between the semiconductor chip 101 and the circuit board 112 can be improved.

  According to the manufacturing method of the semiconductor device of the present embodiment, the flux 116 is formed on the end surface 103A of the bump electrode 103, and then the plate body 105 having the recess 106 is disposed on the flux 116, and the semiconductor chip 101 and the plate A liquid resin 108 is filled between the body 105 (including the recess 106) and the underfill resin 109 is formed by semi-curing the resin 108, whereby the upper surface 109A of the underfill resin 109 and the upper surface of the flux 116 are formed. It is possible to form the semiconductor chip 120 with an underfill resin that is substantially flush with 116A.

  As a result, voids are not generated between the semiconductor chip 101 and the circuit board 112 when the semiconductor chip 120 with the underfill resin is mounted on the circuit board 112, so that the gap between the semiconductor chip 101 and the circuit board 112 is eliminated. Electrical connection reliability can be improved.

  In addition, the step of removing the underfill resin 109 formed on the end surface 103A of the bump electrode 103, which has been conventionally required, is unnecessary by forming the flux 116 on the end surface 103A of the bump electrode 103 before the plate body arranging step. Therefore, the manufacturing cost of the semiconductor device 115 can be reduced.

  In the present embodiment, the case where the underfill resin 109 is formed on the semiconductor chip 101 has been described as an example. However, the semiconductor substrate (by the same method as the steps shown in FIGS. For example, the underfill resin 109 may be formed on a substrate (not shown) on which a plurality of semiconductor chips 101 are formed on a silicon wafer or the like. In this case, the same effect as that of the present embodiment can be obtained.

[Void evaluation]
In order to evaluate the void of the semiconductor device 115 manufactured by the manufacturing method of the semiconductor device of the present embodiment, the semiconductor device D was manufactured under the following conditions.

  In the semiconductor device D (example), solder bumps having a diameter of 100 μm are arranged as bump electrodes 103 on the electrode pads 102 of a 15 mm square semiconductor chip 101 at a pitch of 250 μm, and then a flux 116 having a thickness of 20 μm is applied to the bump electrodes 103. Next, a plate body 105 (made of Teflon (registered trademark)) in which a groove having a quadrangular cross section (width: 100 μm, depth: 10 μm) is formed as a recess 106 on the solder bump is formed on the end surface 103A. The resin 108 is filled between the semiconductor chip 101 and the plate body 105 by a capital flow, and then left in a constant temperature bath (temperature 100 ° C.) for 15 minutes to form a semi-cured underfill resin 109. Thereafter, the plate 105 is removed from the thermostat, the plate body 105 is removed from the underfill resin 109, and the semiconductor with the underfill resin is removed. Forming a tip 120, was prepared in this implementation to the resin substrate 42.5mm angle is a circuit board 112 (heating temperature 250 ° C.) to be.

  When the presence or absence of voids in the semiconductor device D manufactured by such a method was evaluated using an ultrasonic imaging device (SAT), generation of voids between the semiconductor chip 101 and the circuit board 112 could not be confirmed. . From this result, according to the present example, it was confirmed that generation of voids between the semiconductor chip 101 and the circuit board 112 can be prevented.

(Third embodiment)
A method for manufacturing the semiconductor device 125 according to the third embodiment will be described with reference to FIGS. In the present embodiment, when the resin 108 is semi-cured, a portion of the resin 108 disposed between the protruding electrodes 103 protrudes from the end surface 103A of the protruding electrode 103 as an example. Do.

  First, the structure shown in FIG. 10 is formed by performing the same process as the process shown in FIGS. 7 to 10 described in the first embodiment. In the subsequent step shown in FIG. 20, the resin 108 shown in FIG. 10 is heated (heating temperature is, for example, 100 ° C.) to bring the resin 108 into a first semi-cured state. At this time, when the volume of the concave portion 106 is large, as shown in FIG. 20, a convex portion 108 </ b> A is formed in a portion of the resin 108 positioned below the concave portion 106.

  Next, in the step shown in FIG. 21, the plate body 105 is removed from the resin 108 in the first semi-cured state while the resin 108 is heated (heating temperature is, for example, 100 ° C.).

  Next, in the step shown in FIG. 22, a flat plate 126 having a flat surface 126A is prepared in advance, and the resin 108 in the first semi-cured state is heated. The flat plate 126 is pressed against the resin 108 so as to come into contact with the resin 108, and the resin 108 is semi-cured to form the second semi-cured underfill resin 109.

  Thus, when the convex part 108A is formed in the resin 108 in the first semi-cured state, the plate body 105 is removed, and the flat surface 126A of the flat plate 126 is formed on the side where the convex part 108A is formed. By pressing the resin 108 from the resin 108, the upper surface 109A of the second semi-cured underfill resin 109 can be made flat, and the upper surface 109A of the underfill resin 109 and the protruding electrode 103 The end surface 103A can be made substantially flush.

  As the material of the flat plate 126, the same material as the material of the plate body 105 described in the first embodiment can be used.

  Next, in the step shown in FIG. 23, the flat plate 126 shown in FIG. 22 is removed from the underfill resin 109 in the second semi-cured state. Thereby, the semiconductor chip 130 with the underfill resin including the semiconductor chip 101, the protruding electrode 103, and the underfill resin 109 having the flat upper surface 109A is formed.

  Next, in the step shown in FIG. 24, the protruding electrode 103 provided on the semiconductor chip 130 with the underfill resin and the pad 113 provided on the circuit board 112 are joined (the semiconductor chip 130 with the underfill resin is attached to the circuit board 112. The underfill resin 109 in the second semi-cured state is completely cured. As a method for joining the protruding electrode 103 and the pad 113, for example, a thermocompression bonding method (in this case, heating to 250 ° C.), a reflow method, or the like can be used. Thereby, the semiconductor device 125 of the third embodiment is manufactured.

  According to the method for manufacturing a semiconductor device of the present embodiment, when the protrusion 108A is formed on the resin 108 in the first semi-cured state, the plate body 105 is removed from the resin 108 in the first semi-cured state. Thereafter, the flat surface 126A of the flat plate 126 is pressed against the resin 108 from the side on which the projections 108A are formed, so that the upper surface 109A of the second semi-cured underfill resin 109 is flattened. The upper surface 109A of the underfill resin 109 can be made substantially flush with the end surface 103A of the protruding electrode 103.

  As a result, voids are not generated between the semiconductor chip 101 and the circuit board 112 after the semiconductor chip 130 with the underfill resin is mounted on the circuit board 112, so that the electrical connection between the semiconductor chip 101 and the circuit board 112 is eliminated. Connection reliability can be improved.

  In this embodiment, the case where the underfill resin 109 is formed on the semiconductor chip 101 has been described as an example. However, the semiconductor substrate (by the same method as the steps shown in FIGS. For example, the underfill resin 109 may be formed on a substrate on which a plurality of semiconductor chips 101 are formed on a silicon wafer or the like. In this case, the same effect as that of the present embodiment can be obtained.

  Although the embodiment of the present invention has been described in detail above, the present invention is not limited to the specific embodiment, and various modifications and changes are within the scope of the gist of the present invention described in the claims. It can be changed.

Regarding the above description, the following additional notes are disclosed.
(Appendix 1)
Forming a plurality of protruding electrodes on the surface of the substrate;
Preparing a plate having a plurality of recesses on the surface, aligning the recesses between the plurality of protruding electrodes, and contacting the surface of the plate with the protruding electrodes;
Filling the resin between the substrate and the plate, and semi-curing the resin;
And a step of removing the plate after the resin is semi-cured.
(Appendix 2)
The step of semi-curing the resin includes
Curing the resin filled between the substrate and the plate, and bringing the resin into a first semi-cured state;
Next, the step of removing the plate body from the resin in the first semi-cured state,
Next, a step of pressing a flat plate against the resin to cure the resin and bringing the resin into a second semi-cured state;
Then, the process of removing the said flat board, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
(Appendix 3)
3. The method of manufacturing a semiconductor device according to claim 1, wherein the resin is filled in a gap between the semiconductor element or the substrate and the plate body by a capillary phenomenon.
(Appendix 4)
The method of manufacturing a semiconductor device according to any one of appendices 1 to 3, wherein the surface of the plate in the portion where the recess is formed has hydrophilicity.
(Appendix 5)
5. The semiconductor device according to claim 1, wherein the plate body is a surface on which the concave portion is formed, and a portion where the concave portion is not formed has hydrophilicity. Production method.
(Appendix 6)
5. The flux according to any one of appendices 1 to 4, wherein a flux is formed on the protruding electrode in a portion in contact with the plate before the step of bringing the surface of the plate into contact with the protruding electrode. Semiconductor device manufacturing method.
(Appendix 7)
The method for manufacturing a semiconductor device according to any one of appendices 1 to 6, wherein the recess is a groove.

It is sectional drawing of the conventional semiconductor device. It is FIG. (1) which shows the manufacturing process of the conventional semiconductor device. It is FIG. (2) which shows the manufacturing process of the conventional semiconductor device. It is FIG. (3) which shows the manufacturing process of the conventional semiconductor device. It is FIG. (1) for demonstrating the problem of the manufacturing method of the conventional semiconductor device. It is FIG. (2) for demonstrating the problem of the manufacturing method of the conventional semiconductor device. FIG. 6 is a diagram (part 1) illustrating a manufacturing process of the semiconductor device according to the first embodiment of the invention; FIG. 8 is a diagram (part 2) for illustrating a manufacturing step of the semiconductor device according to the first embodiment of the present invention; It is FIG. (The 3) which shows the manufacturing process of the semiconductor device which concerns on the 1st Embodiment of this invention. FIG. 4 is a diagram (part 4) illustrating a manufacturing step of the semiconductor device according to the first embodiment of the present invention; It is FIG. (5) which shows the manufacturing process of the semiconductor device which concerns on the 1st Embodiment of this invention. It is FIG. (6) which shows the manufacturing process of the semiconductor device which concerns on the 1st Embodiment of this invention. It is FIG. (The 7) which shows the manufacturing process of the semiconductor device which concerns on the 1st Embodiment of this invention. It is FIG. (1) which shows the manufacturing process of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is FIG. (2) which shows the manufacturing process of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is FIG. (3) which shows the manufacturing process of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is FIG. (4) which shows the manufacturing process of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is FIG. (5) which shows the manufacturing process of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is FIG. (6) which shows the manufacturing process of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is FIG. (1) which shows the manufacturing process of the semiconductor device which concerns on the 3rd Embodiment of this invention. It is FIG. (2) which shows the manufacturing process of the semiconductor device which concerns on the 3rd Embodiment of this invention. It is FIG. (The 3) which shows the manufacturing process of the semiconductor device which concerns on the 3rd Embodiment of this invention. It is FIG. (4) which shows the manufacturing process of the semiconductor device which concerns on the 3rd Embodiment of this invention. It is FIG. (5) which shows the manufacturing process of the semiconductor device which concerns on the 3rd Embodiment of this invention.

Explanation of symbols

10, 100, 115, 125 Semiconductor device 11, 101 Semiconductor chip 12, 112 Circuit board 13 Bump 14, 109 Underfill resin 14A, 101A Surface 16, 102 Electrode pad 17, 113 Pad 20, 110, 120, 130 Underfill resin Semiconductor chip 21 With void 103 Protruding electrode 103A End surface 105 Plate body 105A Surface 106 Recess 107 Dispenser 108 Resin 108A Protrusion 109A, 116A Top surface 116 Flux 126 Flat plate 126A Flat surface

Claims (5)

Forming a plurality of protruding electrodes on the surface of the substrate;
Preparing a plate having a plurality of recesses on the surface, aligning the recesses between the plurality of protruding electrodes, and contacting the surface of the plate with the protruding electrodes;
Filling resin between the substrate and the plate and in the recess, and semi-curing the resin;
And a step of removing the plate after the resin is semi-cured. The step of semi-curing the resin includes
Curing the resin filled between the substrate and the plate and in the recess, and bringing the resin into a first semi-cured state;
Next, the step of removing the plate body from the resin in the first semi-cured state,
Next, a step of pressing a flat plate against the resin to cure the resin and bringing the resin into a second semi-cured state;
The method for manufacturing a semiconductor device according to claim 1, further comprising a step of removing the flat plate.   3. The method of manufacturing a semiconductor device according to claim 1, wherein the resin is filled in a gap between the semiconductor element or the substrate and the plate body by a capillary phenomenon.   4. The method of manufacturing a semiconductor device according to claim 1, wherein a surface of the plate body in a portion where the recess is formed has hydrophilicity. 5.   5. The flux according to claim 1, wherein a flux is formed on the protruding electrode in a portion in contact with the plate before the step of bringing the surface of the plate into contact with the protruding electrode. The manufacturing method of the semiconductor device of description.

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