JP4988510B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing while a substrate is held substantially horizontally. Here, the substrate to be processed includes a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, and a magnetic substrate. A disk substrate and a magneto-optical disk substrate are included. The processing applied to the substrate includes development processing, etching processing, cleaning processing, rinsing processing, and drying processing.

  In a substrate processing apparatus and a substrate processing method for performing processing with the substrate held substantially horizontally, an inert gas is allowed to flow near the upper surface of the substrate in order to prevent the surface of the substrate from being exposed to an oxygen atmosphere. There is what I did. For example, in the technique described in Patent Document 1, a processing liquid mixed with nitrogen gas is blown downward from a nozzle provided above the substrate to keep the vicinity of the substrate surface in a nitrogen gas atmosphere and shield it from oxygen in the outside air. Yes.

JP 2006-120817 A (FIG. 2)

  In this type of apparatus, a mist of the processing liquid scattered around the substrate during processing may fall on the surface of the substrate. In particular, after the processing liquid is supplied to the substrate and the predetermined processing is performed, when such mist adheres in the process of removing the processing liquid from the substrate and drying, the substrate surface is contaminated and the substrate is It becomes a defective product. Although the above prior art prevents the substrate from coming into contact with oxygen when supplying the processing liquid to the substrate, measures for preventing adhesion of mist and the like to the substrate during substrate drying have been sufficiently studied. There wasn't.

  SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and in a substrate processing apparatus and a substrate processing method for performing a predetermined process while a substrate is held substantially horizontally, a substrate while reliably preventing mist from adhering to the substrate surface. It aims at providing the technique which can dry.

In order to achieve the above object, a substrate processing apparatus according to the present invention holds a substrate whose upper surface is covered with a processing solution in a substantially horizontal state, rotates a substrate around a rotation axis in a substantially vertical direction, and an outer diameter. Is formed smaller than the outer diameter of the substrate, and has an annular injection port for injecting gas obliquely downward on the lower surface or outer peripheral surface , provided above the rotation center of the substrate and extending from the injection port Gas injection means for injecting gas in an annular shape toward the upper surface of the substrate to form a processing space surrounded by the upper surface of the substrate and the gas layer and blocked from the external space , the gas injection means and the substrate The gas jetting means from the state where the gas jetting means is close to the state where the flow direction of the gas jetted from the gas jetting means faces outside the peripheral edge of the substrate and the entire substrate surface faces the processing space. From the above Ru and a distance changing means for increasing the distance between the substrate upper surface and said gas injection means while injecting a. And the 1st aspect of the substrate processing apparatus concerning this invention is further equipped with the process liquid discharge part in which the said gas injection means discharges a process liquid toward the rotation center vicinity of the said board | substrate upper surface. According to a second aspect of the present invention, there is provided a solvent supply means for adding a solvent for lowering the surface tension of the treatment liquid to the treatment liquid on the substrate, and a supply position of the solvent by the solvent supply means. The apparatus further includes moving means for moving the means as the distance between the means and the upper surface of the substrate increases .

In the invention configured as above, the processing liquid is scattered from the peripheral portion by rotating the substrate covered with the processing liquid, and the processing liquid is removed from the central portion on the substrate. The annular gas ejected from the substrate is blown so as to cover a partial region of the upper surface of the substrate, whereby a processing space surrounded by the lower surface of the gas ejecting means, the upper surface of the substrate and the gas layer is formed. As a result, the surface area in the processing space of the upper surface of the substrate is blocked from the external space , and intrusion of mist or the like into this area is prevented. Then, by increasing the distance between the gas jetting means and the upper surface of the substrate, the gas-covered area gradually spreads on the substrate, so that the substrate surface from which the processing liquid has been removed is protected from mist and the like by the gas flow. It can be dried while.

  For example, the substrate holding means rotates while holding the substrate to form a dry area where the processing liquid does not adhere on the upper surface of the substrate and widens the dry area outward, while the interval changing means includes: It is preferable to increase the distance between the gas jetting means and the upper surface of the substrate while applying the gas jetted from the gas jetting means to the vicinity of the peripheral edge of the drying region. In this way, the annular gas ejected from the gas ejecting means acts to push the processing liquid remaining on the substrate outward, thereby promoting the drying of the substrate, and on the substrate from which the processing liquid has been removed. In the dry region, the gas flow regulates the intrusion of mist or the like, so that the substrate can be prevented from being contaminated.

Here, a solvent supply means for adding a solvent for reducing the surface tension of the treatment liquid to the treatment liquid on the substrate, and a solvent supply position by the solvent supply means are determined according to the distance between the gas injection means and the substrate upper surface. According to a further comprising a configuration and a moving means for moving along with the spread, since surface tension solvent is added to the processing liquid is reduced, the drying of the substrate is promoted, also localized liquid on a substrate The rest is prevented from occurring.

  The gas injection means may include a housing capable of temporarily storing gas therein, and an annular injection port for injecting the gas obliquely downward may be provided on a lower surface or an outer peripheral surface of the housing. With such a configuration, it is possible to inject the gas from the annular injection port toward the lower side and gradually expand the injection range.

  The housing includes, for example, an upper member having a cavity that opens downward, and a lower member that covers the opening of the upper member and has a facing surface facing the opening end surface of the upper member, and an opening end surface of the upper member; An injection port can be formed by opposingly arranging the facing surface of the lower member with a predetermined gap. According to such a structure, gas can be injected around through a gap.

  In addition, the gas injection unit may further include a dry gas discharge unit that discharges the dry gas toward the vicinity of the rotation center on the upper surface of the substrate. By doing so, drying of the substrate can be further promoted. Further, by discharging the dry gas from the gas injection means, it is not necessary to provide a separate structure for discharging the dry gas, and the apparatus can be downsized.

In addition, according to the configuration in which the gas ejection unit further includes the processing liquid ejection unit that ejects the processing liquid toward the vicinity of the rotation center on the upper surface of the substrate , the gas ejection unit also has a function of ejecting the processing liquid. The apparatus can be made small.

  For example, the outer diameter of the gas injection means can be made smaller than the outer diameter of the substrate. In particular, it is more preferable that the outer diameter of the gas jetting means is equal to or less than half the outer diameter of the substrate.

  Here, it is desirable for the gas injection means to inject an inert gas as a gas. By doing so, the substrate can be dried while preventing the substrate from being oxidized.

The substrate processing method according to the present invention, for achieving the above object, a treatment liquid supplying step of covering the top surface of the substrate with a treating solution while maintaining the substantially horizontal substrate, above the substantially central portion of the substrate, outside The diameter is smaller than the outer diameter of the substrate, and has an annular injection port for injecting gas obliquely downward on the lower surface or outer peripheral surface, and the annular gas is injected from the injection port toward the upper surface of the substrate. A gas jetting means for jetting is disposed in close proximity, and the substrate is rotated and gas is jetted from the gas jetting means to form a processing space surrounded by the substrate upper surface and the gas layer and blocked from the external space. , and a gas injection step of increasing the distance between the substrate upper surface and said gas injection means, in the gas injection process, at least until the top surface of the substrate into the injection range of all the gas, the gas And the injection and the gas injection means to continue the increase in distance between the upper surface of the substrate. And in the 1st aspect of the substrate processing method concerning this invention, in the said process liquid supply process, the said process liquid is supplied toward the rotation center vicinity of the said substrate upper surface from the said gas injection means. In the second aspect, the solvent for reducing the surface tension of the treatment liquid is changed over the substrate while changing the supply position as the gap between the gas injection means and the upper surface of the substrate increases. Is added to the treatment liquid in the adjacent region adjacent to the substrate .

  In the invention configured as described above, it is possible to dry the substrate while protecting the substrate surface from which the processing liquid has been removed from mist or the like by the flow of gas, as in the case of the substrate processing apparatus described above.

  In the gas injection step, it is desirable to continue increasing the gas injection and the interval between the gas injection means and the substrate upper surface until at least the entire upper surface of the substrate enters the gas injection range. By doing so, it is possible to dry the entire surface of the substrate while preventing adhesion of mist or the like to the substrate.

  In the processing liquid supply step, the processing liquid is supplied to the substrate while the gas is ejected from the gas ejecting means in a state where the gap between the gas ejecting means and the upper surface of the substrate is extended to a position where the gas from the gas ejecting means does not hit the upper surface of the substrate. It is desirable to supply to. In this way, processing can be performed by supplying the processing liquid to the substrate while preventing dust, mist, and the like from above the substrate from falling on the substrate.

  Further, in the processing liquid supply step, the processing liquid may be supplied to the upper surface of the substrate from a gas jetting unit disposed close to the upper side of the substrate. As described above, when the processing liquid is supplied from the gas injection unit, a process for supplying the processing liquid is separately provided and the process of arranging the processing liquid above the substrate becomes unnecessary, and the processing can be performed more efficiently. .

  According to this invention, the upper surface of the substrate is covered with a gas flow to prevent intrusion of dust, mist, etc., and the area covered with gas spreads from the center toward the outside as the process proceeds. In addition, it is possible to prevent dust, mist, and the like from adhering to the top surface of the substrate after the treatment liquid is removed and dried.

  FIG. 1 is a diagram showing a substrate processing system to which the present invention can be preferably applied. More specifically, FIG. 1A is a top view of the substrate processing system, and FIG. 1B is a side view of the substrate processing system. This substrate processing system is a processing system including a plurality of substrate processing units as single-wafer type substrate processing apparatuses for performing processing with a processing liquid, processing gas, or the like on a substrate W such as a semiconductor wafer. The substrate processing system includes a substrate processing unit PP for processing a substrate W, an indexer unit ID coupled to the substrate processing unit PP, and a configuration for supplying / discharging a processing fluid (liquid or gas). The processing fluid boxes 11 and 12 are accommodated.

  The indexer unit ID is a cassette C for storing substrates W (FOUP (Front Opening Unified Pod), SMIF (Standard Mechanical Interface) pod, OC (Open Cassette), etc.) for storing a plurality of substrates W in a sealed state). A plurality of cassette holders 21 that can hold a plurality of cassettes and the cassette C held in the cassette holder 21 are accessed to take out an unprocessed substrate W from the cassette C and store processed substrates in the cassette C. The indexer robot 22 is provided.

  In each cassette C, a plurality of substrates W are accommodated in one unit called “lot”. A plurality of substrates W are transferred between various substrate processing apparatuses in units of lots, and the same type of processing is performed on each substrate W constituting the lot by each substrate processing apparatus. Each cassette C is provided with a plurality of shelves (not shown) for stacking and holding a plurality of substrates W in the vertical direction with minute intervals, and one substrate W is placed on each shelf. Can be held. Each shelf is configured to contact the peripheral edge of the lower surface of the substrate W and hold the substrate W from below. The substrate W has the front surface (pattern forming surface) facing upward and the back surface facing downward. The cassette C is accommodated in a substantially horizontal posture.

  The substrate processing unit PP includes a substrate transfer robot (substrate transfer device) 13 disposed substantially in the center in plan view, and a frame 30 to which the substrate transfer robot 13 is attached. As shown in FIG. 1A, a plurality (four in this embodiment) of processing units 1, 2, 3, and 4 are mounted on the frame 30 so as to surround the substrate transfer robot 13. ing. In this embodiment, as the processing units 1 to 4, processing units that perform predetermined processing on a substantially circular substrate W such as a semiconductor wafer are mounted on the frame 30. Further, as shown in FIG. 1B, another processing unit is installed at the lower stage of each processing unit. In FIG. 1 (b), the processing unit 3B provided in the lower stage of the processing unit 3 and the processing unit 4B provided in the lower stage of the processing unit 4 are illustrated, but the lower stage of the processing units 1 and 2 is similarly illustrated. Another processing unit 1B and 2B are provided, and in this substrate processing system, a total of eight processing units are stacked in two stages of four and mounted on the frame 30.

  The substrate transport robot 13 can receive an unprocessed substrate W from the indexer robot 22 and can deliver the processed substrate W to the indexer robot 22. More specifically, for example, the substrate transfer robot 13 includes a base unit fixed to the frame 30 of the substrate processing unit PP, a lift base attached to the base unit so as to be lifted and lowered, A rotation base attached so as to be able to rotate about a vertical axis with respect to the base, and a pair of hands attached to the rotation base are provided. Each of the pair of substrate holding hands is configured to advance and retract in a direction approaching / separating from the rotation axis of the rotation base. With such a configuration, the substrate transport robot 13 can direct the substrate holding hand to either the indexer robot 22 and the processing units 1 to 4 and 1 to 5, and can advance and retract the substrate holding hand in that state. Thereby, the delivery of the substrate W can be performed.

  The indexer robot 22 takes out the unprocessed substrate W from the cassette C designated by the control unit described below and delivers it to the substrate transfer robot 13, and also receives the processed substrate W from the substrate transfer robot 13 to receive the cassette C To house. The processed substrate W may be stored in the cassette C that is stored when the substrate W is in an unprocessed state. In addition, the cassette C that stores the unprocessed substrate W and the cassette C that stores the processed substrate W are separated, and the cassette C is stored in a different cassette C from the cassette C stored in the unprocessed state. You may comprise so that the processed board | substrate W may be accommodated.

  Next, three embodiments of the processing unit mounted on the substrate processing system described above will be described. In the substrate processing system of FIG. 1, eight processing units are mounted. However, these processing units can all have the same structure as the processing unit 100 described below.

<First Embodiment>
FIG. 2 is a diagram showing a first embodiment of a processing unit as a substrate processing apparatus according to the present invention. This processing unit 100 is a single wafer processing unit used for a cleaning process for removing unnecessary substances attached to the surface Wf of the substrate W such as a semiconductor wafer. More specifically, the substrate surface Wf was wetted with a rinsing solution after being subjected to a chemical treatment with a chemical solution such as hydrofluoric acid and a rinsing treatment with pure water or DIW (deionized water). An apparatus for drying the substrate surface Wf. In this embodiment, the substrate surface Wf refers to a pattern formation surface on which a device pattern made of poly-Si or the like is formed.

  The processing unit 100 of the first embodiment includes a spin chuck 101 that rotates while holding the substrate W in a substantially horizontal posture with the substrate surface Wf facing upward. The spin chuck 101 has a rotation support shaft 111 connected to a rotation shaft of a chuck rotation mechanism 154 including a motor, and can rotate about a rotation axis J (vertical axis) by driving the chuck rotation mechanism 154. A disc-shaped spin base 115 is integrally connected to an upper end portion of the rotation spindle 111 by a fastening component such as a screw. Therefore, the spin base 115 rotates around the rotation axis J by the chuck rotation mechanism 154 operating according to an operation command from the control unit 151 that controls the entire apparatus. Further, the control unit 151 controls the chuck rotation mechanism 154 to adjust the rotation speed.

  Near the peripheral edge of the spin base 115, a plurality of chuck pins 117 for holding the peripheral edge of the substrate W are provided upright. Three or more chuck pins 117 may be provided to securely hold the circular substrate W, and are arranged at equiangular intervals along the peripheral edge of the spin base 115. Each of the chuck pins 117 includes a substrate support unit that supports the peripheral edge of the substrate W from below, and a substrate holding unit that holds the substrate W by pressing the outer peripheral end surface of the substrate W supported by the substrate support unit. Yes. Each chuck pin 117 is configured to be switchable between a pressing state in which the substrate holding portion presses the outer peripheral end surface of the substrate W and a released state in which the substrate holding portion is separated from the outer peripheral end surface of the substrate W.

  When the substrate W is delivered to the spin base 115, the plurality of chuck pins 117 are released, and when the substrate W is cleaned, the plurality of chuck pins 117 are pressed. To do. By setting the pressed state, the plurality of chuck pins 117 can hold the peripheral edge of the substrate W and hold the substrate W in a substantially horizontal posture at a predetermined interval from the spin base 115. As a result, the substrate W is supported with its front surface (pattern forming surface) Wf facing upward and the back surface Wb facing downward. The means for holding the substrate is not limited to using a chuck pin, and a vacuum chuck that supports the substrate W by sucking the back surface Wb of the substrate may be used.

  The spin chuck 101 holding the substrate W is rotated by the chuck rotating mechanism 154 to rotate the substrate W at a predetermined rotation speed, and supply the processing liquid to the substrate surface Wf from the following processing liquid supply nozzle. Then, predetermined wet processing (chemical solution processing and rinsing processing) is performed.

  A processing liquid supply means 120 is provided on the side of the spin chuck 101. The processing liquid supply unit 120 includes a supply nozzle 121 and a turning mechanism (not shown) that turns the supply nozzle 121 between a position facing the center of the substrate W and a standby position on the side of the spin chuck 101. The supply nozzle 121 is connected to a processing liquid supply source (not shown) by piping so that the rinsing liquid and the chemical liquid can be switched and supplied as the processing liquid.

  Further, a gas jet head 200 is provided above a substantially central portion of the substrate W. Gas inlets 281 and 291 for taking in nitrogen gas fed from an external nitrogen gas supply source GS are provided in the upper part of the gas ejection head 200. More specifically, a pipe 172 connected to an external nitrogen gas supply source GS and inserted through an opening / closing valve 171 is connected to the gas inlet 281. Further, a pipe 174 connected to the nitrogen gas supply source GS and inserted through an opening / closing valve 173 is connected to the gas introduction port 291. The open / close valves 171 and 173 are controlled to open and close by a valve control mechanism 152 controlled by the control unit 151, and the nitrogen gas supplied from the gas supply source GS is supplied to the gas ejection head 200 by opening the valves as necessary. Send it in.

  The gas introduction port 281 is communicated with a gas discharge port 283 that opens toward the approximate center of the substrate W on the lower surface (the surface facing the substrate surface Wf) of the gas ejection head 200 by a gas supply path 282. Further, the gas inlet 291 communicates with a buffer space BF formed inside the ejection head 200. Further, a gas injection port 293 communicating with the buffer space BF is provided on the outer peripheral portion of the side surface of the gas injection head 200. A more detailed structure of the gas jet head 200 will be described later.

  The gas ejection head 200 is held above the spin base 115 by an arm (not shown), and the arm is connected to a head lifting mechanism 153 controlled by a control unit 151 so as to be lifted and lowered. With this configuration, the gas ejection head 200 is located between a proximity position that is close to and opposed to the surface Wf of the substrate W held by the spin chuck 101 at a predetermined interval (for example, about 2 mm) and a retreat position that is further away from the proximity position. Is moved and positioned. The gas ejection head 200, the spin chuck 101, the head lifting mechanism 153, and the chuck rotating mechanism 154 are accommodated in the processing chamber 100a.

  FIG. 3 is a top view of the gas jet head. FIG. 4 is a cross-sectional view of the gas jet head viewed from the AA cutting line of FIG. As shown in FIG. 4, the gas jet head 200 is formed by assembling a cup-shaped upper member 201 having a cavity that opens downward and a lower member 202 having a flange 202a at the lower portion to fix screws 211 to 213. It has a fixed structure. The upper member 201 and the lower member 202 are made of a metal such as stainless steel or aluminum, and except for the point that a hole for providing a gas introduction port 291 is formed on the upper surface of the upper member 201, The rotational axis J has a substantially rotationally symmetric shape.

  The opening end surface 201a of the upper member 201 and the peripheral edge 202b of the flange 202a of the lower member 202 are formed so as to face each other. For example, at the joint between the upper member 201 and the lower member 202 by the fixing screw 211 or the like By sandwiching the stainless steel shim 221, a predetermined gap is formed between the opening end surface 201 a of the upper member 201 and the peripheral edge portion 202 b of the lower member 202. Due to this gap, a gas injection port 293 is formed on the outer peripheral surface of the gas injection head 200 so as to open obliquely downward in a slit shape. The size of the gap can be adjusted by the thickness of the shim 221 and is set to about 0.1 mm, for example.

  Further, the downward opening of the cavity provided in the upper member 201 is substantially covered by the flange 202 a of the lower member 202. Therefore, a buffer space BF surrounded by the upper member 201 and the lower member 202 is formed inside the gas ejection head 200.

  The nitrogen gas pumped from the gas supply source GS and introduced from the gas introduction port 281 passes through the gas supply path 282 drilled in the central axis of the upper member 201 substantially coaxially with the rotation axis J of the spin chuck 101 and the upper member. The gas is discharged from a gas discharge port 283 provided on the lower surface of 201.

  On the other hand, the nitrogen gas pressure-fed from the gas supply source GS and introduced from the gas inlet 291 is sent to the buffer space BF formed in the gas jet head 200 and then directed to the outside through the gap between the upper and lower members. Be injected. At this time, since the nitrogen gas is pushed out through a slit-like gas injection port 293 extending substantially in the horizontal direction, the range of the spread of the injected nitrogen gas is restricted in the vertical direction, while the horizontal direction (circumferential direction). Is almost isotropic. That is, when a nitrogen gas is injected from the gas injection port 293, a thin annular airflow is formed on the upper portion of the substrate W from the substantially central portion toward the peripheral portion. In particular, in this embodiment, the pressure-fed gas is once guided to the buffer space BF and then injected from there through the gas injection port 293, so that a uniform injection amount in the circumferential direction can be obtained. Further, the pressurized nitrogen gas is ejected through a small gap, thereby increasing the flow velocity, and the nitrogen gas is vigorously injected toward the surroundings.

  FIG. 5 is a diagram schematically showing a gas flow ejected from the gas ejection head. More specifically, FIG. 5A is a diagram illustrating a gas flow when the gas jet head 200 is in a close position close to the substrate W, and FIG. 5B is a diagram illustrating the gas jet head 200 being separated from the substrate W. It is a figure which shows a gas flow when it exists in the retracted position above the board | substrate W which was performed. As described above, the gas is injected substantially isotropically in the horizontal direction, while its injection direction is restricted in the vertical direction. Specifically, as shown in the hatched portion of FIG. 5A, the gas flow injected from the gas injection port 293 flows in the circumferential direction while gradually expanding in the vertical direction as it moves away from the injection port. In the following, this divergence angle is represented by the symbol θ, while the direction indicated by the center line of the spread, that is, the bisector of the divergence angle θ is represented by the symbol Dg.

  As shown in FIG. 5A, the nitrogen gas injection direction Dg from the gas injection head 200 viewed from the lateral direction is set to be obliquely downward from the gas injection port 293 toward the outside. For this reason, when the gas ejection head 200 is positioned at a close position close to the substrate W, the ejected nitrogen gas collides with the substrate W. Nitrogen gas is blown out in a ring shape and flows so as to cover a region including the central portion of the substrate surface. As a result, a processing space SP surrounded by the substrate surface Wf, the lower surface of the gas ejection head 200, and the gas layer ejected from the gas ejection head 200 appears near the center of the substrate. Since the nitrogen gas is blown out vigorously from the gas jet head 200, the mist M and the air outside the processing space SP that are scattered during the processing cannot enter the processing space SP. That is, the nitrogen gas flow ejected from the gas ejection head 200 has a function of blocking the processing space SP from outside air and scattered mist. Since the nitrogen gas ejected from the gas ejecting head 200 is blown out in a curtain shape, the nitrogen gas ejected from the gas ejecting head 200 is hereinafter referred to as “curtain gas”. Since the curtain gas is sprayed onto the substrate, it is desirable that the curtain gas be an inert gas that does not adversely affect the substrate.

  Furthermore, in this embodiment, it is possible to discharge nitrogen gas from the gas discharge nozzle 283 provided on the lower surface of the gas jet head 200. By supplying nitrogen gas from the gas discharge nozzle 283 to the processing space SP, processing is performed. It is possible to purge the air in the space SP and keep the substrate surface Wf in a nitrogen gas atmosphere. As described above, the nitrogen gas discharged from the gas discharge nozzle 283 has a function of purging the air in the processing space SP, and is hereinafter referred to as “purge gas”. Note that the nitrogen gas discharged from the gas discharge nozzle 283 also acts as a dry gas by being sprayed onto the substrate from directly above the substrate.

  On the other hand, at the retracted position where the gas jet head 200 is separated from the substrate W, as shown in FIG. 5B, the nitrogen gas jetted from the gas jet head 200 is slightly outward from the peripheral edge portion We of the substrate. Flowing. In other words, the position where the gas ejection head 200 is moved away from the substrate W until the flow of nitrogen gas becomes this is set as the retracted position. As a result, a strong gas flow does not strike the substrate surface Wf, and the entire substrate surface Wf faces the processing space SP cut off from the external space. Therefore, mist and the like scattered outside the processing space SP are prevented from adhering to the substrate surface Wf. Furthermore, by supplying nitrogen gas into the processing space SP, the processing space SP is maintained in a nitrogen atmosphere, and oxidation of the substrate surface Wf can be prevented.

  Such an effect can also be obtained by a technique in which a conventionally known blocking member is disposed close to the substrate. However, while the blocking member needs to have a size that covers the entire surface of the substrate, in this embodiment, the gas jet head 200 having a smaller diameter may be provided. Further, it is more preferable that the blocking member is rotated together with the substrate, whereas there is an advantage that the gas jet head 200 of this embodiment does not need to be rotated.

  For this reason, it is not necessary to largely retract the gas ejection head 200 when the substrate W is carried in and out of the spin chuck 101 or when the processing liquid is supplied to the substrate surface Wf. Further, it is not necessary to rotate the gas jet head 200 together when rotating the substrate. Thus, in addition to being able to reduce the size of the gas jet head 200, a space for retracting the gas jet head 200 and a mechanism for rotating the gas jet head 200 are not required. It can be made small, and its height can be particularly suppressed. In addition, since movable parts can be reduced, generation of dust in the processing chamber 100a can be suppressed.

  As a result, the processing units 100 can be stacked and installed in multiple stages in the height direction, and more processing units can be installed in the same installation area to perform processing in parallel. Thus, in the substrate processing system including the processing unit of this embodiment, a high substrate processing throughput can be obtained. In addition, the footprint of the apparatus per processing unit can be reduced.

  FIG. 6 is a flowchart showing the flow of substrate processing in the first embodiment. FIG. 7 is a diagram schematically showing how the substrate is dried in the first embodiment. Before the start of processing, both the open / close valves 171 and 173 are closed, and the spin chuck 101 is stationary. Further, the gas ejection head 200 is positioned at the retracted position (step S101). Next, a single substrate W is carried into the processing unit 100 by the substrate transfer robot 13, placed on the spin chuck 101, and held by the chuck pins 117 (step S102). At this time, the supply nozzle 121 has moved to the standby position.

  First, wet processing is performed by supplying a predetermined processing liquid to the substrate surface Wf using the processing liquid supply means 120 (step S103). At this time, the tip of the supply nozzle 121 is moved to the upper center of the substrate W. As the processing contents of the wet processing, known ones can be applied, and the description thereof is omitted here. For example, known chemical processing such as etching and subsequent rinsing with DIW can be performed. Whether or not to rotate the substrate in the wet process and the number of rotations are arbitrary.

  Following the wet processing, the processing liquid is removed and the substrate surface Wf is dried. Prior to this, the supply nozzle 121 is moved to the standby position, and the gas ejection head 200 is moved and positioned to a proximity position close to the substrate W (step S104). In the state where the rinsing process is completed, it is desirable that the rinsing liquid (DIW) remains on the substrate surface Wf to form a paddle-like liquid film L as shown in FIG. This is to prevent the substrate surface from being exposed to the outside air. Further, the rotation speed of the substrate is set to a low speed so that the residual liquid on the substrate is not scattered by the centrifugal force (step S105).

  In this state, discharge of the purge gas is started from the gas discharge port 283 provided on the lower surface of the gas ejection head 200 (step S106). Thereby, drying starts from the central part of the substrate that has come into contact with the gas. That is, as shown in FIG. 7B, the central portion of the liquid film L on the substrate W disappears and the substrate surface is exposed. Since nitrogen gas is blown to the surface area (dry area DR) of the substrate from which the residual liquid has been removed in this way, oxidation of the exposed substrate surface is prevented.

  When a predetermined time elapses after the supply of the purge gas is started (step S107), the curtain gas injection starts from the gas injection port 293 provided around the gas injection head 200 (step S108). By continuing to supply the nitrogen gas while rotating the substrate, the dry region DR at the center of the substrate gradually spreads outward. As shown in FIG. 7C, the curtain gas injection is started at the timing when the boundary between the dry region DR and the liquid film L spreads to the position where the injection gas from the gas injection port 293 hits. . When the curtain gas injection is started in this way, nitrogen gas is blown to the boundary between the drying region DR and the liquid film L, so that drying of the substrate is greatly promoted. Further, the processing space SP surrounded by the lower surface of the gas jet head 200, the dry region DR of the substrate surface and the gas flow appears, and mist generated at the peripheral edge of the substrate or the like is prevented from entering the processing space SP. Is done. Although mist may fall on the substrate surface outside the processing space SP, there is no problem because the liquid film L still remains in this region.

  Subsequently, the gas injection head 200 starts to rise (step S109), and is moved from the proximity position toward the retracted position. When the curtain gas is injected, the dry region DR on the substrate rapidly spreads, and the boundary with the liquid film L moves outward in the circumferential direction. By raising the gas ejection head 200, the spray destination of the curtain gas can be moved to the outside as the liquid film L recedes as shown in FIG. That is, the rising speed Vh of the gas jet head 200 is set according to the retreating speed of the liquid film L.

  As the gas jet head 200 continues to rise in this way, the liquid film L is gradually driven outward and the drying region DR gradually expands, and the curtain gas is sprayed onto the peripheral edge of the substrate as shown in FIG. Then, the entire substrate surface Wf becomes a dry region. During this time, the scattered mist is prevented from adhering to the dry region DR by the action of the curtain gas, and further, by supplying the purge gas, the dry region is prevented from being oxidized by contact with oxygen. Is done. In this state, the substrate is rotated at a high speed, for example, 1000 rpm or more, and this state is maintained for several seconds.

  When the drying of the entire substrate is completed (step S110), the raising of the gas jet head 200 is stopped (step S111), and the rotation of the substrate and the supply of gas for purging and purging are stopped (steps S112 and S113). At this point, since the gas ejection head 200 has moved to the retreat position, the dried substrate W is unloaded by the substrate transport robot 13 and the processing for one substrate is completed (step S114). Further, by repeating the above processing, a plurality of substrates can be processed sequentially.

  As described above, in this embodiment, in the processing unit that performs processing while rotating the substrate held substantially horizontally, the gas ejection head 200 is provided substantially above the center of the substrate W, and is directed obliquely downward from the center above the substrate. An annular gas flow is formed. For this reason, the processing space SP blocked from the external atmosphere by the lower surface of the gas jet head 200, the substrate surface Wf, and the gas flow appears above the central portion of the substrate. Thereby, adhesion of mist etc. to the surface of the dried substrate is prevented. Further, by supplying nitrogen gas into the processing space SP, oxidation of the dry region of the substrate is prevented.

  Further, in this embodiment, gas is blown in the direction toward the outside with respect to the substrate surface, and this gas flow acts to push the residual liquid on the substrate surface outward. Compared to the technique of draining liquid by the method, the substrate is easily dried. This makes it possible to reduce the number of rotations of the substrate during the drying process, and as a result, in this embodiment, it is possible to reduce the amount of mist itself that scatters from the peripheral edge of the substrate.

  Further, by raising the gas ejection head 200 while ejecting nitrogen gas and moving away from the substrate W, the processing space SP can be gradually expanded outward as the drying area of the substrate surface expands. In particular, by blowing gas toward the boundary between the dry region DR and the liquid film L on the substrate surface, it is possible to protect the dry region at the same time while greatly promoting drying. Thus, according to this embodiment, the whole can be dried in a short time while preventing mist adhesion and oxidation to the substrate surface.

  The gas injection head 200 is configured to store pressurized nitrogen gas supplied from the nitrogen gas supply source GS in the buffer space BF and inject it from a slit-like gas injection port 293 extending in the horizontal direction. . With such a configuration, an injection direction is regulated in the vertical direction, and an isotropic annular gas flow in the horizontal direction can be realized with a relatively simple device configuration.

  FIG. 8 is a flowchart showing a modified example of the substrate processing in the first embodiment. In the above-described embodiment, the curtain gas and the purge gas are not supplied from the gas jet head 200 during the wet process. However, as shown in FIG. The curtain gas and the purge gas may be supplied from the gas ejection head 200 positioned at the position (step S102a). Thereby, it is possible to suppress the adhesion of dust or the like to the substrate W during the wet process. Further, when the gas jet head 200 is brought close to the substrate W after the wet processing, it is preferable to stop the gas supply so as not to blow off the liquid film L on the substrate (step S103a). In FIG. 8, the same reference numerals are assigned to the processing steps having the same processing contents as the processing steps of FIG.

  In this case, it is desirable that the curtain gas from the gas jet head 200 does not directly hit the upper surface of the substrate W during the wet processing in order to distribute the processing liquid uniformly to the upper surface of the substrate. Such an operation can be realized by retracting the gas ejection head 200 to a position above the position where the curtain gas shown in FIG.

Second Embodiment
Next, a second embodiment of the processing unit according to the present invention will be described. This embodiment is different from the first embodiment in that a nozzle for adding a solvent for promoting drying is added to the liquid film on the substrate surface after rinsing separately from the gas jet head. Except for this point, the basic apparatus configuration is the same as that of the first embodiment. Therefore, in the following description, the same components as those in the first embodiment will be denoted by the same reference numerals, and the description thereof will be omitted, and the characteristic parts of the present embodiment will be described mainly.

  FIG. 9 is a diagram showing a second embodiment of the processing unit according to the present invention. The processing unit 400 of this embodiment is provided with an opening / closing valve 471 and a pipe 472 for drawing IPA sent from an external IPA supply source AS that stores isopropyl alcohol (IPA) in liquid form into the processing chamber 400a. It has been. In addition, an IPA discharge nozzle 473 is attached to the end of the pipe 472 drawn into the processing chamber 400a, and a nozzle moving mechanism 455 for moving the nozzle 473 in the radial direction of the substrate (left and right in the drawing) is further provided. Is provided. The nozzle moving mechanism 455 is controlled by the control unit 151.

  FIG. 10 is a diagram schematically showing how the substrate is dried in the second embodiment. In this embodiment, as shown in FIG. 10B, the purge gas is discharged from the lower surface of the gas jet head 200 to the substrate W on which the liquid film L just after rinsing is formed (FIG. 10A). At the same time or a little earlier than this, IPA discharge is started from the IPA discharge nozzle 473 moved to the vicinity of the center of the substrate. Since IPA has the effect of lowering the surface tension of DIW, the liquid film L tends to recede near the center of the substrate to which IPA is added, and local liquid residue on the substrate is prevented. Moreover, drying is further promoted by replacing DIW with IPA having higher volatility.

  When the curtain gas is ejected from the gas ejection head 200 (FIG. 10C) and the gas ejection head 200 is raised at the rising speed Vh (FIG. 10D), the nozzle is moved in conjunction with this. The mechanism 455 moves the IPA discharge nozzle 473 toward the outside of the substrate W. At this time, the IPA discharge nozzle is configured so that the IPA is discharged toward the area immediately outside the area on the substrate where the curtain gas hits, that is, the adjacent area adjacent to the boundary with the dry area DR on the substrate in the liquid film L. A moving speed Vn of 473 is set in advance. Since the substrate W is rotating, it is possible to supply IPA evenly to the entire adjacent region without moving the IPA discharge nozzle 473 in the circumferential direction of the substrate. When the drying proceeds to the peripheral edge of the substrate (FIG. 10E), the supply of IPA is stopped.

  In this way, by moving the position where the curtain gas is applied on the substrate and the position where the IPA is supplied gradually and moving outwardly, the substrate can be moved in a shorter time in this embodiment than in the first embodiment. It can be dried. The other operational effects of the first embodiment, that is, the point that mist adhesion to the substrate and the oxidation of the substrate can be prevented, the point that the apparatus can be made compact, and the like can be obtained in this embodiment as well.

<Third Embodiment>
Next, a third embodiment of the processing unit according to the present invention will be described. This embodiment is different from the first embodiment in that a nozzle for supplying a processing liquid to the gas jet head is added. Except for this point, the basic apparatus configuration is the first embodiment described above. The form is the same. Therefore, in the following description, the same components as those in the first embodiment will be denoted by the same reference numerals, and the description thereof will be omitted, and the characteristic parts of the present embodiment will be described mainly.

  FIG. 11 is a diagram showing a third embodiment of the processing unit according to the present invention. In this embodiment, the gas ejection head 300 is provided substantially above the center of the substrate W held by the spin chuck 101. In the gas ejection head 300, the portions denoted by reference numerals 382, 383, 392, and 393 correspond to the gas supply path 282, the gas discharge port 283, the gas supply path 283, and the gas ejection port 293 in the first embodiment, respectively. The structure and function are the same as those of the corresponding configuration in the first embodiment.

  Supply paths 361 and 363 are further provided through the gas ejection head 300 in the vertical direction. More specifically, the upper end of the supply path 361 is connected to an external IPA supply source (not shown) that stores isopropyl alcohol (IPA) in liquid form. The lower end of the supply path 361 is opened toward the substrate surface Wf on the lower surface of the gas jet head 300 to form a discharge nozzle 362 that discharges IPA. The upper end of the supply path 363 is connected to an external deionized water (DIW) supply source (not shown). The lower end of the supply path 363 is opened toward the substrate surface Wf on the lower surface of the gas jet head 300 to form a discharge nozzle 364 that discharges DIW. In the processing unit of the third embodiment configured as described above, the rinsing liquid used for the rinsing process after the chemical liquid process and the IPA as the replacement liquid for drying are supplied from the gas jet head 300 to the substrate surface Wf.

  FIG. 12 is a flowchart showing the flow of substrate processing in the third embodiment. The steps up to the point where the substrate is carried into the unit and the chemical treatment is performed are the same as in the first embodiment described above (steps S201 to S203). Next, the substrate is rinsed by discharging DIW as a rinsing liquid from the discharge nozzle 364 provided on the lower surface of the gas injection unit 300 (step S204). This replaces the chemical on the substrate surface with DIW. Whether the substrate is rotated during this period is arbitrary.

  After the supply of DIW is continued for a predetermined time, the supply of DIW is stopped (step S205), and the gas ejection head 300 is brought close to the substrate W (step S206). Then, the substrate is rotated at a low speed (step S207), and supply of IPA is started from the discharge nozzle 362 provided on the lower surface of the gas ejection head 300 (step S208). As described in the section of the second embodiment, IPA dissolves in the liquid film on the substrate, thereby reducing the surface tension and promoting the drying of the substrate. After a predetermined time, the supply of IPA is stopped (step S209).

  The operations after DIW is replaced with IPA (steps S210 to S218) are the same as the processing in the first embodiment (steps S106 to S114 in FIG. 6), and thus the description thereof is omitted.

  As described above, in this embodiment, since the nozzles for ejecting DIW and IPA are provided in the gas ejection head 300, the entire processing unit can be made smaller. In addition, DIW or IPA can be supplied to the approximate center of the substrate W while the gas jet head 300 is disposed immediately above the substrate W. In addition, the operational effects described in the description of the first and second embodiments can be similarly obtained in this embodiment. Further, it is possible to easily inject curtain gas and purge gas during supply of DIW and IPA.

  FIG. 13 is a flowchart showing a first modification of the substrate processing in the third embodiment. In the above-described embodiment, the curtain gas and the purge gas are not supplied from the gas jet head 300 during the wet process. However, as shown in FIG. The curtain gas and the purge gas may be supplied from the gas jet head 300 positioned at the position (step S202a). Thereby, it is possible to suppress the adhesion of dust or the like to the substrate W during the wet process. Also in this case, it is preferable to stop the gas supply when bringing the gas ejection head 300 close to the substrate. For example, the gas supply may be stopped when the DIW supply is stopped (step S205a). ).

  FIG. 14 is a flowchart showing a second modification of the substrate processing in the third embodiment. In the above embodiment, the DIW is supplied to the substrate W from the gas ejection head 300 positioned at the retracted position above the substrate W. Instead, as shown in FIG. 14, the gas jet head 300 is brought close to the substrate W after the chemical treatment, and the substrate W is rotated at a low speed (steps S203a and S203b), and DIW is supplied to the substrate W in this state. You may make it do (step S204). By doing so, it is possible to suppress the DIW from being scattered. In FIG. 13 and FIG. 14, each processing step having the same processing content as the processing step in FIG.

<Others>
As described above, in each of the above embodiments, the spin chuck 101 functions as the “substrate holding unit” of the present invention. The gas injection heads 200 and 300 both function as “gas injection means” and “housing” of the present invention, and the gas injection ports 293 and 393 function as “injection ports” of the present invention. Further, the head lifting mechanism 153 functions as the “interval changing means” of the present invention. Further, the IPA discharge nozzle and the nozzle moving mechanism 455 in the second embodiment function as the “solvent supply means” and the “moving means” of the present invention, respectively. Further, the gas discharge port 283 in the first embodiment and the gas discharge port 383 in the third embodiment both function as the “dry gas discharge unit” of the present invention, while the discharge nozzles 362 and 364 in the third embodiment are the main ones. It functions as the “treatment liquid discharge part” of the invention.

  In the first embodiment, step S103 in FIG. 6 corresponds to the “treatment liquid supply process” of the present invention, while steps S104 to S113 correspond to the “gas injection process” of the present invention.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the gas jet head 200 according to the first embodiment described above, the shim 221 is sandwiched between the upper member 201 and the lower member 202 so that the opening end surface 201a of the upper member 201 and the flange peripheral edge 202b of the lower member 202 are separated. A gap is provided between them to form a slit-like gas injection port 293. However, for example, the following may be used to form the gas injection port.

  FIG. 15 is a view showing another example of a structure for forming a gas injection port. More specifically, FIG. 15A and FIG. 15B are diagrams showing another example of the shape of the lower member for forming the slit-like gas injection port. In the lower member 501 shown in FIG. 15A, a plurality of ribs 502 are provided radially on the peripheral edge 501b of the flange 501a. The lower member 501 having such a shape is attached to the upper member 201 in place of the lower member 202 in the first embodiment, and the upper end of the rib 502 is brought into contact with the open end surface 201a of the upper member 201, so that Creates a gap corresponding to the rib height. If it does in this way, a desired gap can be formed without adjustment without using a shim, and gas can be ejected radially from this gap. Further, in the lower member 601 shown in FIG. 15B, a plurality of protrusions 602 are provided on the peripheral edge 601b of the flange 601a in place of the ribs. Even if it does in this way, the same effect is acquired. The protrusions may be arranged in a so-called zigzag pattern in which the positions of the protrusions are different in the circumferential direction. Further, these ribs and protrusions may be formed on the opening end face side of the upper member.

  In each of the above embodiments, the gas jet heads 200 and 300 are made of metal such as stainless steel or aluminum, but the gas jet head, particularly the lower member, may be made of resin. By doing so, it is possible to reduce the weight of the gas jet head and improve the chemical resistance. Examples of resin materials suitable for such applications include polyether ether ketone (PEEK), polyvinyl chloride (PVC), and polychlorotrifluoroethylene (PCTFE).

  Further, in the above embodiment, the gap between the substrate W and the gas jet head 200 and the like is increased by raising the gas jet head 200 and the like with respect to the substrate W held by the spin chuck 101. Instead, the gas ejection head 200 or the like may be fixed and the spin chuck 101 may be moved downward. Moreover, you may move both so that it may mutually space apart.

  In the third embodiment, the ejection nozzle for supplying DIW and IPA to the substrate is provided in the gas ejection head 300, but the fluid ejected from the ejection nozzle provided in the gas ejection head is limited to these. It is not a thing. For example, a nozzle for supplying a chemical solution for chemical treatment to the substrate may be further provided in the gas ejection head, or only a part of these discharge nozzles may be provided.

  In each of the above embodiments, the nitrogen gas supplied from the single nitrogen gas supply source GS is discharged from each of the gas injection port provided on the side surface of the gas injection head and the gas discharge port provided on the lower surface. However, it is not limited to such a configuration. For example, the gas supply sources may be different from each other. Further, for example, the gas to be discharged may be other than nitrogen gas, but in order not to adversely affect the substrate, an inert gas is desirable.

  The present invention is not limited to the above-described embodiment, and can be applied to a substrate processing apparatus and a substrate processing method in general that perform a predetermined process while the substrate is held substantially horizontally. Here, the substrate to be processed includes a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, and a magnetic substrate. A disk substrate and a magneto-optical disk substrate are included. The processing applied to the substrate includes development processing, etching processing, cleaning processing, rinsing processing, and drying processing. In addition, the present invention is preferably applied not only to a substrate processing system having a plurality of processing units as in the above embodiment, but also to a substrate processing apparatus having only one set of substrate holding means and gas injection means. Can do.

It is a figure which shows the substrate processing system which can apply this invention suitably. It is a figure which shows 1st Embodiment of the processing unit concerning this invention. It is the figure which looked at the gas injection head from the upper surface. It is sectional drawing of the gas-jet head seen from the AA cutting line of FIG. It is a figure which shows typically the gas flow injected from a gas injection head. It is a flowchart which shows the flow of the board | substrate process in 1st Embodiment. It is a figure which shows typically the mode of the board | substrate drying in 1st Embodiment. It is a flowchart which shows the modification of the board | substrate process in 1st Embodiment. It is a figure which shows 2nd Embodiment of the processing unit concerning this invention. It is a figure which shows typically the mode of the board | substrate drying in 2nd Embodiment. It is a figure which shows 3rd Embodiment of the processing unit concerning this invention. It is a flowchart which shows the flow of the board | substrate process in 3rd Embodiment. It is a flowchart which shows the 1st modification of the board | substrate process in 3rd Embodiment. It is a flowchart which shows the 2nd modification of the board | substrate process in 3rd Embodiment. It is a figure which shows the other example of the structure for forming a gas injection port.

Explanation of symbols

1, 2, 3, 4, 1B, 2B, 3B, 4B, 100 ... processing unit 1a, 2a, 3a, 4a, 100a ... processing chamber 101 ... spin chuck (substrate holding means)
153... Head lifting mechanism (interval changing means)
200, 300 ... Gas injection head (gas injection means)
201 ... Upper member 202, 501, 601 ... Lower member 293, 393 ... Gas injection port (injection port)
283, 383 ... Gas outlet (dry gas outlet)
362, 364 ... Discharge nozzle (treatment liquid discharge part)
473 ... IPA discharge nozzle (solvent supply means)
BF ... Buffer space

Claims (12)

A substrate holding means for holding the substrate whose upper surface is covered with the processing liquid in a substantially horizontal state and rotating around a rotation axis in a substantially vertical direction;
Together with the outer diameter is smaller than the outer diameter of the substrate has an annular injection port for injecting a gas obliquely downward to the lower surface or the outer peripheral surface, the injection port is provided above the rotating center of the substrate Gas injection means for injecting gas in an annular shape toward the upper surface of the substrate from above , forming a processing space surrounded by the upper surface of the substrate and the gas layer and blocked from the external space ;
From the state in which the gas injection means and the substrate are brought close to each other, the flow direction of the gas injected from the gas injection means faces outward from the peripheral edge of the substrate, and the entire substrate surface enters the processing space. A gap changing means for gradually increasing the gap between the gas jetting means and the upper surface of the substrate while jetting the gas from the gas jetting means until it reaches a state ;
The substrate processing apparatus, wherein the gas injection unit includes a processing liquid discharge unit that discharges a processing liquid toward the vicinity of the rotation center of the upper surface of the substrate. A substrate holding means for holding the substrate whose upper surface is covered with the processing liquid in a substantially horizontal state and rotating around a rotation axis in a substantially vertical direction;
The outer diameter is smaller than the outer diameter of the substrate, and has an annular injection port for injecting gas obliquely downward on the lower surface or outer peripheral surface, and is provided above the rotation center of the substrate. Gas injection means for injecting gas in an annular shape toward the upper surface of the substrate from above, forming a processing space surrounded by the upper surface of the substrate and the gas layer and blocked from the external space;
From the state in which the gas injection means and the substrate are brought close to each other, the flow direction of the gas injected from the gas injection means faces outward from the peripheral edge of the substrate, and the entire substrate surface enters the processing space. A gap changing means for gradually increasing the gap between the gas jetting means and the upper surface of the substrate while jetting the gas from the gas jetting means until it reaches a state;
A solvent supply means for adding a solvent for reducing the surface tension of the treatment liquid to the treatment liquid on the substrate;
Moving means for moving the supply position of the solvent by the solvent supply means as the distance between the gas injection means and the upper surface of the substrate increases.
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 2, wherein the gas injection unit further includes a processing liquid discharge unit that discharges a processing liquid toward the vicinity of the rotation center of the upper surface of the substrate. The substrate holding means rotates while holding the substrate, thereby forming a dry region where the processing liquid does not adhere on the upper surface of the substrate and expanding the dry region outward,
The distance changing means, said while the gas injected from the gas injection means against the periphery near the dry region, in any one claims 1 to increase the distance between the third and the substrate upper surface and said gas injection means The substrate processing apparatus as described. It said gas injection means has an outer diameter with a temporarily storable housing gas therein smaller than the outside diameter of the substrate, according to claim 1, wherein the injection port in the lower surface or the outer peripheral surface of the housing is provided The substrate processing apparatus in any one of 4 thru | or 4 . The housing includes an upper member having a cavity that opens downward, and a lower member that covers the opening of the upper member and has a facing surface facing the opening end surface of the upper member, and the opening end surface of the upper member The substrate processing apparatus according to claim 5 , wherein the injection port is formed by opposingly facing a lower surface of the lower member with a predetermined gap therebetween. It said gas injection means is a substrate processing apparatus according to any one of claims 1 to 6 further comprising a drying gas discharge portion for discharging the dry gas toward the center of rotation near the upper surface of the substrate. It said gas injecting means, the substrate processing apparatus according to any one of claims 1 to 7 for injecting inert gas as the gas. A process liquid supply step of covering the upper surface of the substrate with the process liquid while holding the substrate substantially horizontally;
Above the substantially central portion of the substrate, the outer diameter is smaller than the outer diameter of the substrate, and has an annular injection port for injecting gas obliquely downward on the lower surface or outer peripheral surface, from the injection port Gas injection means for injecting gas in an annular shape toward the upper surface of the substrate is arranged close to the substrate, and the substrate is rotated and gas is injected from the gas injection means to be surrounded by the substrate upper surface and the gas layer. A gas injection step of increasing a gap between the gas injection means and the upper surface of the substrate while forming a processing space cut off from the space ;
In the processing liquid supply step, the processing liquid is supplied from the gas jetting unit toward the vicinity of the rotation center of the upper surface of the substrate,
In the gas injection step, at least until the entire upper surface of the substrate enters the gas injection range, the gas injection and the increase in the distance between the gas injection means and the upper surface of the substrate are continued. A substrate processing method. A process liquid supply step of covering the upper surface of the substrate with the process liquid while holding the substrate substantially horizontally;
Above the substantially central portion of the substrate, the outer diameter is smaller than the outer diameter of the substrate, and has an annular injection port for injecting gas obliquely downward on the lower surface or outer peripheral surface, from the injection port Gas injection means for injecting gas in an annular shape toward the upper surface of the substrate is arranged close to the substrate, and the substrate is rotated and gas is injected from the gas injection means to be surrounded by the substrate upper surface and the gas layer. A gas injection step of increasing a distance between the gas injection means and the upper surface of the substrate while forming a processing space cut off from the space;
With
In the gas injection step, the gas injection and the increase in the distance between the gas injection means and the substrate upper surface are continued until at least the upper surface of the substrate enters the gas injection range. A solvent for reducing the surface tension is added to the processing liquid in the adjacent region adjacent to the spraying range on the substrate while changing the supply position as the gap between the gas spraying means and the substrate upper surface widens.
And a substrate processing method. In the treatment liquid supply step, while the gap from the gas jetting unit and the substrate upper surface is widened to a position where the gas from the gas jetting unit does not hit the upper surface of the substrate, The substrate processing method according to claim 9 , wherein the processing liquid is supplied to the substrate. 11. The substrate processing method according to claim 9, wherein in the processing liquid supply step, the processing liquid is supplied to the upper surface of the substrate from the gas jetting unit disposed close to the upper side of the substrate.

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