JP4966028B2 - Vacuum deposition equipment - Google Patents

Description

  The present invention relates to a vacuum deposition apparatus in which an evaporation source is vaporized in a vacuum atmosphere and a vaporized substance is deposited on a deposition target.

  A vacuum deposition apparatus arranges an evaporation source and a deposition target in a vacuum chamber and heats the evaporation source in a state where the inside of the vacuum chamber is depressurized to melt and evaporate the evaporation source. The vaporized material is sublimated or vaporized, and the vaporized material is deposited on the surface of the vapor deposition target for vapor deposition. The vaporized material generated from the evaporation source when heated is discharged straight from the evaporation source in the normal direction, but the vaporization material goes straight because the discharge space is kept in a vacuum, and is placed facing the evaporation source. It adheres and deposits on the surface of the to-be-deposited body.

  However, since the vaporized material is released straightly from the evaporation source in the normal direction, there are many vaporized materials that do not travel toward the deposition target, and the vaporized material that does not travel toward the deposition target as described above. There is a problem that it does not adhere to the surface of the vapor deposition body, and the yield of the evaporation source is lowered and the vapor deposition rate on the surface of the vapor deposition body is slow.

  Therefore, a space in which the evaporation source disposed in the vacuum chamber and the deposition target face are surrounded by a cylindrical body, and the cylindrical body is heated at a temperature at which the substance of the evaporation source is vaporized. There has been proposed a vacuum vapor deposition apparatus in which vapor deposition is performed on the surface of an object to be vapor-deposited through a body (see, for example, Patent Document 1).

  In addition, when co-evaporation is performed on an object to be vapor-deposited, a plurality of evaporation sources are used, substances evaporated from each evaporation source reach the object to be vapor-deposited, and a plurality of vaporized substances are mixed and adhered to the object to be vapor-deposited. (See, for example, Patent Document 2).

  FIG. 5 shows an example of this, and a cylindrical body 4 having an open top surface is disposed in the vacuum chamber 1, and a heater 20 is wound around the cylindrical body 4 to heat the cylindrical body 4. I can do it. A plurality of evaporation sources 2 are arranged at the bottom of the cylindrical body 4, and the evaporation sources 2 can be vaporized by heating with a heating element 21. The deposition target 3 is disposed above the opening at the upper end of the cylindrical body 4. Reference numeral 22 denotes a vacuum pump that evacuates the vacuum chamber 1 to create a vacuum atmosphere, and reference numeral 23 denotes a shutter.

  In this case, when the inside of the vacuum chamber 1 is evacuated and the evaporation source 2 is heated by the heating element 21 and vaporized, the substance evaporated from each evaporation source 2 flies through the cylindrical body 4 and passes through. Attached to the surface of the deposition target 3 through the opening at the upper end of the cylindrical body 4 and can be co-deposited by being deposited on the deposition target 3 in a state where the vaporized substances of the respective evaporation sources 2 are mixed. It is. And in this thing, since the space which each evaporation source 2 and the to-be-deposited body 3 opposes is surrounded by the cylindrical body 4, in the state which surrounded the vaporization substance generated from the evaporation source 2 in the cylindrical body 4, While this vaporized material is reflected by the inner surface of the cylindrical body 4, it can be advanced toward the vapor deposition target 3, and most of the vaporized material generated from the evaporation source 2 can reach the surface of the vapor deposition target 3. Therefore, it is possible to perform deposition with a high yield by reducing the amount of escape without adhering to the deposition target 3. Further, the cylindrical body 4 is heated by the heater 20, and even if the vaporized substance adheres to the inner surface of the cylindrical body 4, it is reheated and revaporized, and the revaporized substance reaches the deposition target 3. A vapor deposition layer is formed, and a vaporized substance is not deposited on the cylindrical body 4 so that the yield is not lowered.

Further, in order to control the concentration ratio when co-evaporating using a plurality of evaporation sources 2, a vapor deposition thickness measuring means 24 for vaporizing a substance evaporated from the evaporation source 2 and measuring the evaporation thickness is provided in the cylindrical body 4. Is provided. Then, one of the plurality of evaporation sources 2 is heated to generate a vaporized substance, and the vapor deposition rate is measured by measuring the film thickness per time that the vaporized substance adheres to the vapor deposition thickness measuring means 24. Next, while the heating temperature of the one evaporation source 2 is maintained, the other evaporation source 2 is heated to generate a vaporized substance, and the film thickness per time when this vaporized substance adheres to the vapor deposition thickness measuring means 24 is set. By measuring the vapor deposition rate, and controlling the temperature of the heating element 21 of each evaporation source 2, the vapor deposition rate of the vaporized material from each evaporation source 2 is controlled, and the concentration ratio of co-deposition is controlled. It is.
JP 2002-080961 A JP 2004-059982 A

  However, in the above, since the vaporized substances from the plurality of evaporation sources 2 adhere to the vapor deposition thickness measuring means 24, the vapor deposition thicknesses of the substances vaporized from the individual evaporation sources 2 cannot be individually measured. Therefore, it is difficult to accurately detect the vapor deposition rates of the substances vaporized from the individual evaporation sources 2, and there is a problem that it is difficult to accurately control the concentration ratio of co-deposition.

  The present invention has been made in view of the above points, and can accurately measure individual deposition rates of substances vaporized from a plurality of evaporation sources, and can accurately control the concentration ratio of co-deposition. It aims at providing a vacuum evaporation system.

  In the vacuum vapor deposition apparatus according to claim 1 of the present invention, a plurality of evaporation sources 2 and vapor deposition bodies 3 are arranged in a vacuum chamber 1 and a space between these vaporization sources 2 and vapor deposition bodies 3 is disposed in the vaporization source. A vacuum surrounded by a cylindrical body 4 heated at a temperature at which the two substances are vaporized, and vaporized from the evaporation source 2 through the cylindrical body 4 so as to reach the surface of the deposition target 3 and to be deposited. In the vapor deposition apparatus, a connection cylinder portion 12 for individually connecting each evaporation source 2 to the inside of the cylindrical body 4 and a position between the evaporation source 2 and the cylinder body 4 are provided on the inner periphery of each connection cylinder portion 12. The inside of the connection cylinder part 12 which is provided in each connection cylinder part 12 between the narrowing part 13 which narrows the internal diameter of the connection cylinder part 12, and the evaporation source 2 and the expansion part 13, and the substance 9 vaporized from the evaporation source 2 passes. Opening / closing means 6 capable of adjusting the opening degree of the circumference, and each connection between the throttle 13 and the opening / closing means 6 In accordance with the vapor deposition thickness measured by the individual vapor deposition thickness measuring means 7 and the individual vapor deposition thickness measuring means 7 that is provided in the unit 12 and vaporizes the substance 9 vaporized from the evaporation source 2 and measures the vapor deposition thickness. An opening / closing control means 8 for adjusting the opening degree of the opening / closing means 6 of the connecting cylinder portion 12 is provided.

  According to this invention, the vapor deposition thickness is measured by the individual vapor deposition thickness measuring means 7 provided in each connection cylinder portion 12, whereby the substance 9 vaporized from each evaporation source 2 passes through the opening of the opening / closing means 6 and is connected. The amount of movement from the cylindrical portion 12 through the cylindrical body 4 to the deposition target 3 can be individually detected, and the amount by which the vaporized substances 9 from the respective evaporation sources 2 are deposited on the deposition target 3 Can be accurately detected individually, and each evaporation source 2 is controlled by controlling the degree of opening of each connection tube portion 12 according to the vapor deposition thickness measured by each individual vapor deposition thickness measuring means 7. Thus, the amount of the vaporized substance 9 deposited on the deposition target 3 can be controlled accurately and individually, and the concentration ratio of co-deposition can be controlled accurately. Further, by providing the constriction 13 in each connection cylinder 12, the constriction 13 suppresses the substance 9 vaporized from the other evaporation source 2 from entering the connection cylinder 12, and this invading vaporized substance 9. Can be prevented from adhering to the individual vapor deposition thickness measuring means 7, and the vapor deposition rate can be accurately measured by the individual vapor deposition thickness measuring means 7.

  Further, the invention of claim 2 is the co-deposition thickness measuring means 14 for co-depositing the substance 9 vaporized from each of the plurality of evaporation sources 2 and measuring the deposition thickness, and the co-deposition thickness measuring means 14 according to claim 1. An opening / closing control means 15 for adjusting the opening degree of the opening / closing means 6 of each connecting cylinder portion 12 according to the measured deposition thickness is provided.

  According to the present invention, by measuring the vapor deposition film thickness by the co-deposition thickness measuring means 14, it is possible to detect the vapor deposition rate at which the substance 9 vaporized from each evaporation source 2 co-deposits on the deposition target 3. By controlling the opening degree of the opening / closing means 6 according to the vapor deposition thickness measured by the vapor deposition thickness measuring means 14, it is possible to control the vapor deposition rate on the deposition target 3 while maintaining the concentration ratio of co-deposition. Is.

  According to the present invention, the vapor deposition thickness is measured by the individual vapor deposition thickness measuring means 7 provided in each connection cylinder portion 12, whereby the substance 9 vaporized from each evaporation source 2 passes through the opening of the opening / closing means 6 and is connected. The amount of movement from the cylindrical portion 12 through the cylindrical body 4 to the deposition target 3 can be individually detected, and the amount by which the vaporized substances 9 from the respective evaporation sources 2 are deposited on the deposition target 3 Can be accurately detected individually, and each evaporation source 2 is controlled by controlling the degree of opening of each connection tube portion 12 according to the vapor deposition thickness measured by each individual vapor deposition thickness measuring means 7. Thus, the amount of the vaporized substance 9 deposited on the deposition target 3 can be controlled accurately and individually, and the concentration ratio of co-deposition can be controlled accurately. Further, the restricting portion 13 prevents the substance 9 vaporized from the other evaporation source 2 from entering the connecting cylinder portion 12, and prevents the invading vaporized substance 9 from adhering to the individual vapor deposition thickness measuring means 7. The vapor deposition rate can be accurately measured by the individual vapor deposition thickness measuring means 7.

  Hereinafter, the best mode for carrying out the present invention will be described.

  FIG. 1 shows an example of an embodiment of the present invention. The vacuum chamber 1 can be decompressed to a vacuum state by evacuating with a vacuum pump 22. A cylindrical body 4 is disposed in the vacuum chamber 1. The cylindrical body 4 is formed in a bottomed cylindrical shape whose upper surface is open, and the opening on the upper surface is closed with a dispersion plate 29 provided with a large number of through holes 28. The deposition target 3 such as a substrate on which vapor deposition is performed is disposed above the cylindrical body 4 so as to face the opening at the upper end of the cylindrical body 4. A heater 20 such as a sheathed heater is wound around the outer periphery of the cylindrical body 4. The cylindrical body 4 can be heated by supplying power from a power source 26 connected to the heater 20 to generate heat. It is.

  A plurality of connecting cylinder portions 12 are connected to the bottom surface of the cylindrical body 4. The connecting cylinder portion 12 is formed in a cylindrical shape whose upper end opening communicates with the cylindrical body 4, and is provided in a number corresponding to the number of evaporation sources 2 to be co-evaporated. A heating container 31 such as a crucible is disposed in the lower end portion of each connecting cylinder part 12, and an individual evaporation source 2 for co-evaporation is set in the heating container 31. Although any material can be used as the evaporation source 2, for example, an organic material such as an organic electroluminescence material can be used. A heating element 21 is attached to the heating container 31, and the evaporation source 2 in the heating container 31 can be heated by supplying power from a power supply 32 connected to the heating element 21 to generate heat. It is. Further, a heating element 10a formed by a sheathed heater and a cooling body 10b formed by a cooling pipe through which a refrigerant is passed are provided on the outer periphery of each connecting cylinder portion 12. The heating element 10a can adjust the heat generation temperature by controlling a heating source 34 formed by a power source or the like, and the cooling body 10b can be controlled by controlling a cooling source 35 formed by a refrigerant cooling / feeding device or the like. The cooling temperature can be adjusted, and the temperature of the connecting tube portion 12 can be individually adjusted by controlling the heating temperature and the cooling temperature.

  A throttle portion 13 is formed at the upper end portion of each connection cylinder portion 12 communicating with the tubular body 4 by bending inward so as to narrow the inner diameter of the connection cylinder portion 12. Each connecting cylinder portion 12 is provided with an opening / closing means 6 at a position between the evaporation source 2 and the throttle portion 13. The opening / closing means 6 is formed by an electric valve, an electric shutter or the like so that the opening degree can be adjusted. The opening / closing means 6 of each connection cylinder portion 12 is electrically connected to an opening / closing control means 8 formed with a CPU, a memory, and the like. The degree of opening is controlled individually.

  Further, a side opening 38 is formed between the opening / closing means 8 and the throttle part 13 of each connecting cylinder portion 12, and the individual vapor deposition thickness measuring means 7 is provided facing the side opening 38. Although it does not specifically limit as the individual vapor deposition thickness measurement means 7, The film thickness meter which can measure automatically the film thickness vapor-deposited on the surface, such as a crystal oscillator thickness meter, can be used. . The individual vapor deposition thickness measuring means 7 of each connecting cylinder 12 is electrically connected to the open / close control means 8 individually, and the vapor deposition film thickness data measured by the individual vapor deposition thickness measuring means 7 is input to the open / close control means 8. It is supposed to be. The opening degree of the opening / closing means 6 is controlled based on the deposition film thickness data input to the opening / closing control means 8.

  In performing vapor deposition with the vacuum vapor deposition apparatus formed as described above, first, the heating container 31 of each connection cylinder portion 12 is filled with the evaporation source 2 and set, and the deposition target 3 is the cylindrical body 4. Set it horizontally against the top opening. Next, the vacuum pump 22 is operated to depressurize the inside of the vacuum chamber 1 to a vacuum state, and the heating elements 21 of the connection cylinder portions 12 are caused to generate heat to heat the evaporation sources 2. Further, the cylindrical body 4 is heated by the heater 20. The heating temperature of the cylindrical body 4 is set to a temperature at which a substance evaporated from the evaporation source 2 evaporates and vaporizes again even if it adheres to the cylindrical body 4 and is not decomposed.

  When the inside of the vacuum chamber 1 is depressurized and each evaporation source 2 is heated as described above, each evaporation source 2 is vaporized by melting, evaporation, or sublimation, and this vaporized substance 9 generated from each evaporation source 2 is connected. It passes through the opening of the opening / closing means 6 of the cylindrical portion 12 and the throttle portion 13 and is introduced into the cylindrical body 4 and travels straight through the cylindrical body 4. The space in which the vaporized substance 9 travels between each evaporation source 2 and the deposition target body 3 is surrounded by the cylindrical body 4, and the vaporized substance 9 is confined in the cylindrical body 4. As shown, the vaporized substance 9 is reflected by the inner surface of the cylindrical body 4 and proceeds toward the opening at the upper end. At this time, since the opening at the upper end of the cylindrical body 4 is closed by the dispersion plate 29 provided with a large number of through holes 28, the vaporized substance 9 in the cylindrical body 4 passes through the through holes 28 of the dispersion plate 29. After that, it comes out of the opening at the upper end of the cylindrical body 4 and reaches the surface of the deposition target 3, and the vaporized substance 9 can be deposited on the surface of the deposition target 3 for vapor deposition. Thus, since the vaporized substance 9 passes through the plurality of through holes 28 of the dispersion plate 29 and proceeds to the vapor deposition target 3, the vaporized substance 9 can reach the vapor deposition target 3 with a uniform distribution. It can vapor-deposit on the to-be-deposited body 3 with a sufficient film thickness.

  Further, the substances 9 vaporized from the respective evaporation sources 2 as described above are regulated in the cylindrical body 4 and can prevent the vaporized substances 9 from being scattered in all directions. Most of the generated vaporized substance 9 can reach the surface of the deposition target 3 and be attached thereto. Accordingly, most of the vaporized substance 9 generated from the evaporation source 2 adheres to the surface of the vapor deposition target 3 and contributes to film formation, thereby reducing the ineffective materials, increasing the material utilization efficiency of the evaporation source 2 and increasing the yield. Can be deposited at a high rate, and the film forming speed on the surface of the deposition target 3 can be increased. Further, since the cylindrical body 4 is heated and forms a hot wall, even if the vaporized substance 9 adheres to the surface of the cylindrical body 4, the deposit is reheated by the cylindrical body 4 and vaporizes. The vaporized substance 9 re-vaporized in this manner is deposited on the surface of the deposition target 3 in the same manner as described above. The dispersion plate 29 attached in contact with the inner periphery of the tubular body 4 is also heated by heat transfer or radiant heat from the tubular body 4, and even if the substance 9 vaporized from the evaporation source 2 adheres to the dispersion plate 29. It vaporizes again by evaporation or the like, and is deposited on the surface of the deposition object 3. Accordingly, it is possible to prevent the vaporized substance 9 from being deposited on the cylindrical body 4 or the dispersion plate 29 and not being used for vapor deposition, and the yield of vapor deposition is not reduced.

  Here, when the vaporized substance 9 generated from the evaporation source 2 passes through the opening of the opening / closing means 6 in each connecting cylinder part 12, a part thereof reaches the individual vapor deposition thickness measuring means 7 from the side opening 38 and accumulates. The vapor deposition is performed on the individual vapor deposition thickness measuring means 7. Since the vaporized substance 9 generated from the evaporation source 2 is released into the vacuum space, the mean free path is as long as several tens of meters. The speed of reaching the body 3 and being deposited is correlated. Therefore, by measuring the vapor deposition film thickness by the individual vapor deposition thickness measuring means 7, the film thickness at which the vaporized substance 9 of the evaporation source 2 measured by the individual vapor deposition thickness measuring means 7 is vapor deposited on the vapor deposition body 3 is detected. Further, by measuring the vapor deposition film thickness per unit time, that is, the vapor deposition rate by the individual vapor deposition thickness measuring means 7, the vaporized substance 9 of the evaporation source 2 measured by the individual vapor deposition thickness measuring means 7 is deposited. It is possible to detect the deposition rate of vapor deposition. The individual vapor deposition thickness measuring means 7 can individually measure the vapor deposition rate of the vaporized substance 9 for each evaporation source 2, and is not affected by the vaporized substance 9 from the other evaporation sources 2. The vapor deposition rate of the vaporized substance 9 from the evaporation source 2 can be accurately measured.

  At this time, each connecting tube portion 12 is provided with a narrowed portion 13 having a small inner diameter, so that the vaporized substance 9 that has come out of the connecting tube portion 12 into the tubular body 4 enters the other connecting tube portion 12. It has become difficult. For this reason, only the vaporized substance 9 generated from the evaporation source 2 of the connection cylinder part 12 and passing through the opening of the opening / closing means 6 adheres to the individual vapor deposition thickness measurement means 7 of each connection cylinder part 12. The deposition rate of the substance 9 vaporized from each evaporation source 2 can be measured more accurately.

  As described above, the vaporization substance 9 generated from the evaporation source 2 of each connection cylinder portion 12 is vapor-deposited on the deposition target 3 by individually measuring the vapor deposition rate by the individual vapor deposition thickness measuring means 7 in each connection cylinder portion 12. The vapor deposition rate can be detected individually, and the ratio of the vapor deposition rates individually measured by the individual vapor deposition thickness measuring means 7 of each connecting tube portion 12 is the concentration at which the vapor deposition target 3 is co-deposited. It becomes a ratio.

  On the other hand, the substance 9 evaporated from the evaporation source 2 passes through the opening of the opening / closing means 6, moves through the cylindrical body 4 to the deposition target 3, and is deposited on the deposition target 3. By adjusting the opening degree of the opening / closing means 6, the amount of the vaporized substance 9 that moves through the opening / closing means 6 can be adjusted. That is, since the vaporized substance 9 is a gas, if the opening degree of the opening / closing means 6 is reduced, the amount of the vaporized substance 9 moving through the opening / closing means 6 is reduced, and conversely, if the opening degree of the opening / closing means 6 is increased. The amount of the vaporized substance 9 that moves through the opening / closing means 6 increases.

  Therefore, when the vapor deposition rate data individually measured by the individual vapor deposition thickness measuring unit 7 in each connecting cylinder portion 12 is input to the open / close control unit 8, the CPU of the open / close control unit 8 calculates the ratio of the respective vapor deposition rates. Then, based on the calculation result, the opening / closing control means 8 controls the opening degree of the opening / closing means 6 of each connecting cylinder portion 12. That is, by adjusting the opening degree of the opening / closing means 6 of each connection cylinder part 12, the ratio of the vapor deposition rates individually measured by the individual vapor deposition thickness measurement means 7 of each connection cylinder part 12 can be adjusted. Yes, the opening / closing control means 8 controls the ratio of the opening degree of the opening / closing means 6 of each connecting cylinder portion 12 so that the ratio of the vapor deposition rate becomes the target value of the concentration ratio to be co-deposited on the deposition object 3. is there. As described above, the individual vapor deposition thickness measuring means 7 can accurately measure the vapor deposition rate of the vaporized substances 9 from the individual evaporation sources 2, so that the individual vapor deposition thickness measuring means 7 of each connecting cylinder portion 12 individually. Based on the measured deposition rate, the concentration ratio of co-deposition can be accurately controlled by controlling the opening degree of the opening / closing means 6 of each connecting tube portion 12.

  FIG. 2 shows another example of the embodiment of the present invention, and a co-evaporation thickness measuring means 14 is provided in the vicinity of the deposition target 3. The co-evaporation thickness measuring means 14 may be disposed between the narrowed portion 13 through which the vaporized substance 9 passes and the deposition target 3, but in order to more accurately measure the deposition thickness on the deposition target 3. It is preferable to arrange in the vicinity of the deposition target 3. As the co-evaporation thickness measuring means 14, a quartz oscillator film thickness meter or the like can be used as in the case of the individual vapor deposition thickness measuring means. The vapor deposition thickness measuring means 14 is electrically connected to an open / close control means 15 formed with a CPU, a memory, etc., and the vapor deposition film thickness data measured by the co-evaporation thickness measuring means 14 is the open / close control means 15. To be input. Based on the vapor deposition film thickness data input to the opening / closing control means 15, the opening degree of the opening / closing means 6 provided in each connection cylinder portion 12 is controlled. In the embodiment shown in FIG. 2, the opening / closing control means 15 is also used as the opening / closing control means 8. Other configurations are the same as those in FIG.

  In this case, when vapor deposition is performed as described above, the vaporized substance 9 generated from each evaporation source 2 reaches the surface of the vapor deposition target 3 and is co-deposited, and at the same time, the co-deposition thickness measuring means 14. The vapor deposition material 9 is vapor-deposited on the co-evaporation thickness measuring means 14 with a film thickness having a correlation with the film thickness on which the vaporized substance 9 of each evaporation source 2 is vapor-deposited on the deposition target 3. Therefore, the film thickness co-deposited on the deposition target 3 can be detected by measuring the vapor deposition film thickness by the co-evaporation thickness measuring means 14, and the vapor deposition film per unit time can be detected by the co-evaporation thickness measuring means 14. By measuring the thickness, that is, the vapor deposition rate of co-evaporation, the vapor deposition rate of co-evaporation on the deposition target 3 can be detected.

  Accordingly, the vapor deposition thickness and vapor deposition rate are measured by the co-vapor deposition thickness measuring means 14, and the opening / closing means is controlled by controlling the opening degree of the opening / closing means 6 of each connection cylinder portion 12 by the opening / closing control means 15 based on the measurement data. It is possible to control the amount of the vaporized substance 9 that passes through 6 and moves to the deposition target 3, and the deposition thickness and deposition rate on the deposition target 3 can be controlled. At this time, since the ratio of the opening degree of the opening / closing means 6 of each connecting cylinder portion 12 is controlled by the opening / closing control means 8 so as to become the target value of the concentration ratio of co-evaporation as described above, The opening degree of the opening / closing means 6 of each connection cylinder part 12 is controlled with the ratio maintained.

  The control of the deposition thickness and the deposition rate will be specifically described. First, the degree of vacuum in the vacuum chamber 1, the heating temperature of the cylindrical body 4 by the heater 20, and the heating temperature of each evaporation source 2 by the heating element 21 are set to the same conditions as in actual vapor deposition, and the opening / closing means The preliminary test which calculates | requires the correlation data of the opening degree adjusted by 6 and the vapor deposition rate measured by the co-deposition thickness measurement means 14 is performed. Further, since the amount of vaporization decreases as the amount of substance in the evaporation source 2 decreases due to vaporization, the correlation data is corrected in accordance with the time change of the deposition rate measured by the co-evaporation thickness measuring means 14. The correlation data between the opening degree of the opening / closing means 6 and the deposition rate obtained in this way is stored in the memory of the opening / closing control means 15.

  When actually performing co-deposition on the deposition target 3, the opening / closing control means 15 opens and closes the opening / closing means 6 of each connection cylinder portion 12 so that the opening degree corresponds to the target value of the deposition rate on the deposition target 3. Is controlled to perform co-evaporation. Further, during the co-deposition, when the deposition rate of co-deposition measured by the co-evaporation thickness measuring unit 14 becomes larger than the target value, the opening / closing control unit 15 controls the opening / closing unit 6 of each connecting cylinder portion 12. When the opening degree is reduced and the vapor deposition rate of the co-deposition measured by the co-evaporation thickness measuring means 15 becomes smaller than the target value, the opening / closing control means 15 controls the opening / closing means 6 of each connecting cylinder portion 12. The opening degree is increased, and the opening degree of the opening / closing means 6 of each connection cylinder portion 12 is feedback-controlled in this way, so that the co-deposition rate of the target value is maintained.

  In the above embodiment, the narrowed portion 13 provided in each connecting tube portion 12 is formed to be bent inward so as to narrow the inner diameter of the connecting tube portion 12, but as shown in FIG. The throttle portion 13 may be formed as a tube 13a having an inner diameter smaller than the inner diameter of the connecting cylinder portion 12. Here, the substance of the evaporation source 2 is heated by conduction heat from the heating element 21 and radiant heat from the connection cylinder portion 12 and is vaporized by increasing the degree of vacuum in the vacuum chamber 1. It behaves as a molecular flow in a low atmosphere. The flow rate of the molecular flow = conductance × pressure. The conductance is proportional to the cross-sectional area in the case of a hole, and is proportional to the cube of the inner radius of the tube and inversely proportional to the length. Therefore, by forming the throttle portion 13 as a long tube 13a as shown in FIG. 3, the conductance can be reduced and the flow rate of the molecular flow can be reduced, and the vaporized substance in the cylindrical body 4 can be reduced. 9 is more reliably prevented from passing through the throttle portion 13 (tube 13a) and entering the connecting cylinder portion 12, and the vapor deposition rate of the vaporized substance 9 from the evaporation source 2 by the individual vapor deposition thickness measuring means 7 is more accurate. Can be measured. Even if a vaporized substance adheres to the inner periphery of the tube 13a, it is heated by heat transfer from the connecting cylinder portion 12 and re-evaporates, and the yield of vapor deposition does not decrease. As described above, when the narrowed portion 13 is heated to a temperature at which the material of the vapor deposition source 2 is vaporized, and the conductance for the material 9 vaporized from the vapor deposition source 2 is formed as a tube 13a smaller than that of the connecting cylinder portion 12. The concentration ratio of co-deposition can be accurately controlled without reducing the yield of the substance 9 vaporized from the deposition source 2.

  In order to increase the measurement accuracy of the vapor deposition rate of the vaporized substance 9 by the individual vapor deposition thickness measuring means 7 when forming the throttle portion 13 with the tube 13a in this way, the conductance of the tube 13a is connected to the evaporation source 2 side from the tube 13a. It is preferable to set it to 1/300 or less of the conductance of the cylindrical portion 12.

  Further, when vaporized substances 9 from a plurality of evaporation sources 2 are co-deposited on the deposition target 3 at substantially the same rate, the conductances of the tubes 13a provided in each connection cylinder portion 12 are set to be the same and at different deposition rates. In the case of co-evaporation, it is preferable to set the conductance of the pipe 13a provided in each connection cylinder portion 12 to be suitable for the deposition rate.

  In particular, in the case of doping vapor deposition, since the concentration of the dopant material is about several percent with respect to the host material, the conductance of the tube 13a of the connecting tube portion 12 provided with the evaporation source 2 of the dopant material is set to the evaporation source 2 of the host material. By reducing it to 1/500 or less of the conductance of the tube 13a of the connecting cylinder 12 provided, it is possible to easily cope with dope vapor deposition with greatly different vapor deposition rates. In this case, as shown in FIG. 4, the inner diameter of the tube 13a of the connecting cylinder portion 12 provided with the dopant material evaporation source 2 is set to be larger than the inner diameter of the tube 13a of the connecting cylinder portion 12 provided with the host material evaporation source 2. By forming the tube 13a of the connecting tube portion 12 provided with the evaporation source 2 of the dopant material longer than the length of the tube 13a of the connecting tube portion 12 provided with the evaporation source 2 of the host material, the dopant material The conductance of the pipe 13a of the connecting cylinder part 12 provided with the evaporation source 2 can be made smaller than the conductance of the pipe 13a of the connecting cylinder part 12 provided with the evaporation source 2 of the host material. In addition, by reducing the conductance of the tube 13a of the connection cylinder portion 12 provided with the dopant material evaporation source 2 in this way, the vaporizing substance 9 in the cylindrical body 4 is connected to the dopant material evaporation source 2 provided. Intrusion into the portion 12 can be prevented more reliably, and the vapor deposition rate of the dopant material having a low dope concentration can be measured more accurately by the individual vapor deposition thickness measuring means 7.

It is a schematic sectional drawing which shows an example of embodiment of this invention. It is a schematic sectional drawing which shows another example of embodiment of this invention. It is a schematic sectional drawing which shows another example of embodiment of this invention. It is a schematic sectional drawing which shows another example of embodiment of this invention. It is a schematic sectional drawing of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Evaporation source 3 To-be-deposited body 4 Cylindrical body 6 Opening / closing means 7 Individual vapor deposition thickness measurement means 8 Opening / closing control means 9 Vaporized substance 12 Connection cylinder part 13 Restriction part 14 Co-deposition thickness measurement means 15 Opening / closing control means

Claims (2)

  A plurality of evaporation sources and vapor deposition bodies are arranged in a vacuum chamber, and a space between these evaporation sources and vapor deposition bodies is surrounded by a cylindrical body heated at a temperature at which the evaporation source material is vaporized, and vaporized. In a vacuum vapor deposition apparatus in which a substance vaporized from a source reaches a surface of an object to be deposited through a cylindrical body and is vapor-deposited, a connection cylinder part for individually connecting each evaporation source to the cylindrical body, an evaporation source and a cylinder Provided at the inner circumference of each connecting cylinder part at a position between the cylindrical body and the throttle part for narrowing the inner diameter of the connecting cylinder part, and provided at each connecting cylinder part between the evaporation source and the throttle part. Opening and closing means that can adjust the opening degree of the inner periphery of the connecting cylinder part through which the material passes, and provided in each connecting cylinder part between the throttle part and the opening and closing means, vaporize the material vaporized from the evaporation source, the evaporation Individual deposition thickness measuring means for measuring thickness and each individual deposition thickness Depending on the deposition thickness measured by the measuring means, a vacuum vapor deposition apparatus characterized in that it comprises an opening and closing control means for adjusting the degree of opening of the closing means of the connection tube portion.   Co-deposition thickness measuring means for co-depositing vaporized substances from each of the plurality of evaporation sources and measuring the deposition thickness, and opening / closing means for each connection tube portion according to the deposition thickness measured by the co-deposition thickness measurement means The vacuum deposition apparatus according to claim 1, further comprising an opening / closing control means for adjusting an opening degree.

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