JP4838876B2 - Chamber type ion transport ionizer - Google Patents

Description

  The present invention relates to a chamber type ion transport ionization apparatus for removing static electricity generated in a clean room or the like.

  Conventionally, the generation of static electricity has been a problem in clean rooms for manufacturing semiconductors, liquid crystal displays (hereinafter, LCDs) and the like. In the case of a semiconductor manufacturing clean room, the low humidity environment, the plastic container carrying the wafer and the semiconductor elements are easily charged, and the like cause static electricity. This static electricity causes dust to adhere to the wafer surface and destroys ICs and semiconductor elements on the wafer, thereby reducing the yield of products.

  In the case of an LCD, static electricity is generated due to frictional charging due to contact with different materials in the processing process. In particular, since the glass substrate used in the LCD has a large area and is highly insulating and easily generates static electricity, electrostatic breakdown due to a large amount of static electricity affects the yield of products.

  Therefore, conventionally, as an apparatus for removing static electricity in a production environment such as a clean room, an air ionizer that neutralizes the charge of a charged body with ions has been used. This air ionizer generates a corona discharge by applying a positive or negative high voltage to a positive or negative electrode, ionizes the air around the electrode tip into positive and negative, The charge on the charged body is neutralized with ions of opposite polarity.

  However, in the conventional air ionization apparatus using the corona discharge described above, in order to facilitate the generation of ions and prevent the consumption of the generated ions, the air is ionized in the state where the electrode is exposed near the object to be neutralized. Was. For this reason, the following problems have occurred.

(1) Ozone generation Since the air in the vicinity of the object to be neutralized is ionized by corona discharge, in addition to the ionization of nitrogen and water vapor in the air, a reaction in which oxygen becomes ozone also occurs. Due to the oxidizing action of ozone, the surface of the silicon wafer is oxidized, or it reacts with a small amount of impurities in the air to generate secondary particles.

(2) Generation of electromagnetic noise Irregular electromagnetic waves generated from the discharge electrode at the time of discharge may cause malfunction of precision equipment and computers with built-in semiconductor elements.
(3) Dust generation from ion generating electrode Each time corona discharge is caused, the electrode is worn and the worn electrode material is scattered. Further, a trace gas component in the air is formed into particles by corona discharge and deposited on the ion generating electrode, and when it becomes a certain size, it is scattered again. Such dust generation reduces the yield.

  In recent years, manufacturing apparatuses such as semiconductors and LCDs have been downsized year by year, and it has become difficult for conventional air ionization apparatuses to secure an optimal installation space in these manufacturing apparatuses. That is, in the conventional air ionization apparatus, in order to perform effective static elimination, a space of an appropriate size between the electrode for generating ions and the static elimination object, for example, a distance between the electrode and the static elimination object is 300 mm. Although it has been necessary to separate them as described above, it has become difficult to secure such an installation space for the air ionizer with the recent miniaturization of manufacturing apparatuses.

  Further, for example, in the LCD manufacturing process, since the glass substrate is remarkably charged by contact and peeling, conventionally, static elimination has been performed by the air ionizer as described above. However, since the processing speed of the production apparatus is high, the glass substrate is often stored in a cassette without being completely neutralized. In such a cassette, since the space between the glass substrate and the glass substrate accommodated is as narrow as several mm, when using a conventional air ionizer, the flow of ionized air does not enter between the glass substrates, It was difficult to neutralize the glass substrate. Accordingly, there is an increasing demand for countermeasures against static electricity in such a narrow space.

  Furthermore, in recent years, there has been known a photoionizer that directly irradiates a charged body with soft X-rays and ionizes the periphery of the charged body to neutralize the charge. The installation was difficult.

  The present invention has been proposed in order to solve the above-described problems of the prior art, and its purpose is to produce various production apparatuses without causing generation of ozone, electromagnetic noise, dust generation, and the like. It is an object of the present invention to provide a chamber type ion-conveying ionization apparatus that can cope with downsizing and can perform static elimination even in a narrow space.

  In order to solve the above-described problem, a chamber type ion transport ionization apparatus according to claim 1 includes an ionization unit that ionizes a part of the ion transport gas supplied into the chamber, and ion transport gas toward the charged body. A chamber having a blowing section for supplying, the ionization section is composed of an ionization source built in the chamber, and a control device that is provided outside the chamber and controls the amount of ions generated by the ionization source; The chamber may be expanded in a conical shape or a pyramid shape in accordance with the radiation angle of the ionization source on the downstream side of the ionization source.

  In the above aspect, since the ionization source for ionizing the gas in the chamber and its control device are provided separately and only the ionization source is disposed in the chamber, the inner diameter of the chamber can be reduced. For this reason, it is possible to generate ions in a very narrow place and to remove static electricity even in a narrow space.

  Further, by expanding the chamber downstream of the ionization source into a conical shape or a pyramid shape according to the radiation angle of the ionization source, the ionization region by X-rays or the like is expanded, so that the amount of generated ions is greatly increased. be able to.

  According to a second aspect of the present invention, the ionization unit includes a chamber having an ionization unit that ionizes a part of the ion carrier gas supplied into the chamber and a blowout unit that supplies the ion carrier gas toward the charged body. Is composed of an ionization source built in the chamber and a control device that is provided outside the chamber and controls the amount of ions generated by the ionization source, and the chamber is provided on a side portion of the air transport pipe. It is characterized by being a bypass pipe.

  In the above aspect, the air in the air transport pipe is fed into the bypass pipe provided on the side of the air transport pipe, the air is ionized, and the ionized airflow is again sent to the air transport pipe. It is not necessary to separately introduce the ion carrier gas into the chamber type ion carrier ionizer. Moreover, since the blowing part of the chamber type ion transport ionization apparatus of the present invention corresponds to the joining part of the bypass pipe and the air transport pipe, it is not necessary to attach a nozzle or the like.

  According to the present invention, a chamber type that does not cause generation of ozone, electromagnetic noise, dust generation, etc., can cope with downsizing of various manufacturing apparatuses, and can perform static elimination even in a narrow space. An ion transport ionization apparatus can be provided.

It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 1st Embodiment of this invention. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 2nd Embodiment of this invention. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 3rd Embodiment of this invention. It is a schematic diagram which shows the Example to which 3rd Embodiment is applied. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 4th Embodiment of this invention. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 5th Embodiment of this invention. It is a schematic diagram which shows the Example which applied 5th Embodiment. It is a schematic diagram which shows the other Example to which 5th Embodiment is applied. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 6th Embodiment of this invention. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 7th Embodiment of this invention. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 8th Embodiment of this invention. It is a schematic diagram which shows the other structure of the chamber type ion transport ionization apparatus by 8th Embodiment of this invention. It is a schematic diagram which shows the structure of the chamber type ion transport ionization apparatus by 9th Embodiment of this invention.

  The form for implementing this invention is demonstrated with reference to FIGS.

[1. First Embodiment]
[1-1. Constitution]
FIG. 1 is a schematic diagram showing a configuration of a chamber type ion transport ionization apparatus according to the present embodiment. In the figure, reference numeral 1 denotes a cylindrical ionization chamber (hereinafter referred to as a chamber), which is composed of a metal pipe having a length of about 20 cm and a diameter of about 25φ. As a material for the chamber, a metal such as aluminum or stainless steel or a resin such as vinyl chloride is used. The chamber 1 is roughly composed of an ionization unit, a shielding unit, and a blowing unit. Hereinafter, the structure of each part is demonstrated.

(Configuration of ionization unit)
A thin tube (not shown) is connected to the side end portion (right side end portion in the figure) of the chamber 1 through the tube fitting 2, and through this tube, air in the clean room or the like in the chamber 1, or A non-reactive gas (hereinafter referred to as ion carrier gas) such as high-purity N2 gas is supplied. Here, “high purity N2 gas” refers to N2 gas that contains oxygen and water vapor to the extent that negative ions are formed, and that does not generate ozone (about 5% or less).

  An ion generator 3 is provided in the vicinity of the position where the tube fitting 2 is disposed in the chamber 1. The ion generator 3 includes an ionization source 4 disposed in the chamber 1 and a control device 5 that controls the amount of ions generated by the ionization source 4. The control device 5 is arranged outside the chamber 1 and comprises a power supply unit and a control unit for generating soft X-rays, low energy electron beams, ultraviolet rays or creeping discharge from the ionization source 4, and is ionized by a cable 6. Connected to source 4.

  The ionization source 4 includes a generator of a soft X-ray generator, a generator of a low energy electron beam generator, a sealed radioisotope, a generator of an ultraviolet generator, an ionizer using creeping discharge, and the like. An ion carrier gas flowing inside is configured to be ionized.

(Configuration of shielding part)
The chamber 1 is provided with a shielding part on the downstream side of the ionization part. For example, as shown in FIG. 1, the shielding portion is composed of two semicircular partition walls 7 and 7, and these partition walls 7 and 7 are spaced apart from each other by an upper portion and a lower portion of the chamber 1. It is formed alternately. That is, when the ionization source 4 is a soft X-ray generator, a low-energy electron beam generator, or a sealed radioisotope, radiation from the straight soft X-ray, electron beam, or radioisotope (α ray or β ray) ) Hits the partition walls 7 and 7 and is shielded so that they do not leak to the outside. When the ionization source 4 is an ultraviolet ray generating part or a creeping discharge generating part, this shielding part is unnecessary.

(Composition of the blowout part)
The front end portion 1a of the chamber 1 is opened and disposed in the vicinity of the charged body S, and is configured to supply positive and negative ions generated in the ion generator 3 toward the charged body S.

(Ionization source)
Next, the ionization source 4 will be described. Soft X-rays are weak X-rays having an energy of about 3 to 9.5 keV, and can be easily shielded with a vinyl chloride plate having a thickness of about 2 mm. The low energy electron beam is an electron beam (soft electron) extracted at a low operating voltage of several tens of kV by, for example, an ultra-compact electron beam irradiation tube manufactured by USHIO INC., And reaches about 5 cm in the air. There is only a distance, and the air or gas in that area is ionized. Note that the low-energy electron beam needs to be shielded because it generates ozone and simultaneously soft X-rays in a gas containing oxygen. Therefore, when a low-energy electron beam is used as the ionization source, it is desirable to use a non-reactive gas containing oxygen that does not generate ozone, such as high-purity N2 gas, as the ion carrier gas.

  Further, the sealed radioisotope is obtained by encapsulating a radioisotope in a capsule or the like, and examples of the radioisotope include americium 241 that generates α rays and nickel 63 that generates β rays. The energy of α rays generated from americium 241 is about 5.4 MeV, and the ionization effect is large, but the reach distance in air is about several centimeters, and can be easily shielded with one sheet of paper. Further, the energy of β rays generated from the nickel 63 is about 57 keV and can be easily shielded by a resin plate. Moreover, the ultraviolet rays generated from the ultraviolet ray generator have a short wavelength of 400 nm or less and an output of about 30 w.

  When the ionization source 4 is a soft X-ray generator or a sealed radioisotope, either ion or non-reactive gas may be used as the ion carrier gas supplied to the chamber 1, but the ionization source 4 is low. In the case of an energy electron beam generating part or an ultraviolet ray generating part, it is desirable to use a non-reactive gas containing oxygen to the extent that ozone is not generated, such as high-purity N2 gas.

[1-2. Effect]
Next, the operation and effect of the chamber type ion transport ionization apparatus of the present embodiment having the above-described configuration will be described. That is, the ion carrier gas supplied to the chamber 1 through the tube and the tube fitting 2 (not shown) is soft X-ray, low energy electron beam, ultraviolet light, creeping discharge, or radioactive isotope by the ionization source 4 built in the chamber 1. When irradiated with radiation or the like from an element, positive and negative ions are formed. Then, these positive and negative ions pass through a shielding part provided on the downstream side of the ionization part, and are supplied to the charged body S from the front end 1a of the chamber 1, and each of the positive and negative charges on the charged body S are neutralized. To sum up.

  As described above, in the chamber type ion transport ionization apparatus of the present embodiment, when the ionization source 4 is a soft X-ray generation unit or a sealed radioactive isotope, either ion or non-reactive gas is used as the ion transport gas. Even if it is used, ozone is not generated. Further, there is no dust generation such as scattering of electrode materials, accumulation of impurities in the air, and re-scattering, and generation of electromagnetic noise does not occur.

  In addition, when the ionization source 4 is a low energy electron beam, ultraviolet ray or creeping discharge generation part, a non-reactive gas containing oxygen that does not generate ozone, such as high-purity N2 gas, is used as an ion carrier gas. By doing so, ozone is not generated during ionization, and dust generation and electromagnetic noise are not generated.

  Furthermore, since soft X-rays, low-energy electron beams, and radiation from sealed radioisotopes (α-rays, etc.) can be sufficiently shielded with a thin vinyl chloride plate or the like, and there is almost no reflection, as shown in FIG. It can be shielded with a simple structure. Further, since the downstream side periphery of the ionization part of the chamber 1 can be made into a shielding structure, it is not necessary to separately shield when installing the chamber type ion transport ionization apparatus, and a simple configuration can be obtained. The range of application of the chamber-type ion transport ionizer is widened. In addition, since a shielding part is formed around the downstream side of the ionization part of the chamber 1, the entire production apparatus is made of a vinyl chloride plate of about 2 mm like a production apparatus in which a conventional ionization source is exposed and installed. There is no need to cover.

  In addition, the ionization source 4 and its control unit 5 that is a power supply unit and a control unit are separately provided via a cable 6, and only the ionization source 4 is installed in the chamber 1, thereby reducing the inner diameter of the chamber 1. Can do. As a result, ions can be generated in an extremely narrow place, and static elimination can be performed even in a narrow space such as a gap between glass substrates stored in a cassette. Further, since the distance from the ionization source 4 to the chamber outlet is short, there is an advantage that there is almost no decrease in ions due to recombination of positive and negative ions.

[2. Second Embodiment]
The present embodiment is a modification in which the configuration of the shielding part of the first embodiment is changed. As shown in FIG. 2, in this embodiment, the shielding part of the chamber 1 is composed of two punching plates 10a and 10b provided with a large number of pores 11 having a diameter of about 3φ. The punching plates 10a and 10b are installed so as to be separated from each other by about 3 mm and so that the pores 11 do not overlap. Since other configurations are the same as those of the first embodiment, description thereof will be omitted.

  In the chamber type ion transport ionization apparatus of the present embodiment having the above-described configuration, not only the same functions and effects as those of the first embodiment are obtained, but also the chamber is formed by the method using the partition walls shown in FIG. Since the turbulence of the airflow passing through the inside is small, there is an advantage that the decrease in the amount of ions due to the turbulence is small.

[3. Third Embodiment]
The present embodiment is a modification in which the configuration of the blowing unit of the first embodiment is changed. Needless to say, the blowing portion of this embodiment can be applied to the second embodiment. As shown in FIG. 3, in the present embodiment, a nozzle 20 for ejecting an ionized airflow is provided on the downstream side of the shielding portion of the chamber 1. As the nozzle 20, for example, a nozzle 216, a flat nozzle 920, an air curtain 302-306, an air knife 392-396, etc. manufactured by SILVENT are used.

  In the chamber type ion transport ionization apparatus of the present embodiment having the above-described configuration, not only the same functions and effects as those of the first embodiment or the second embodiment are obtained, but also a desired shape in the blowout portion. -By attaching the nozzle 20 having a size, it is possible to spray the ionized airflow onto the charged body at a high speed and remove dust and the like adhering to the charged body with high efficiency while removing electricity. Further, by selecting various nozzles 20, the ionized airflow can be widened in a conical shape at a wide angle or in an air curtain shape, so that the ionized airflow can be controlled in accordance with the object to be neutralized. Furthermore, by using a nozzle capable of adjusting the opening degree, the ejection speed of the ionized air current can be easily changed.

Next, a more specific example using this embodiment will be described.
Example 1
If static electricity is generated when the resin bag 21 is filled with the contents, the content adheres to the inlet of the resin bag 21, so that the resin bag 21 is welded even if the opening of the resin bag 21 is sealed by heat sealing. The problem of being unable to do so occurred.

  FIG. 4 shows an example in which the chamber type ion transport ionization apparatus of this embodiment is installed at the entrance of such a resin bag. That is, as shown in FIG. 4, in the present embodiment, a substantially conical nozzle 22 is attached to the outlet of the chamber type ion transport ionization apparatus shown in FIG. It is arranged toward the inlet of the resin bag 21. And the static electricity which generate | occur | produced in the entrance part of the resin back | bag 21 can be removed by blowing ionized air current at high speed toward the entrance part of the resin back | bag 21 from the substantially cone-shaped nozzle 22. FIG.

[4. Fourth Embodiment]
The present embodiment is a modified example in which the configuration of the blowing unit of the third embodiment is further changed. As shown in FIG. 5, in this embodiment, the flexible hose 30 is attached to the blowing part of the chamber 1, and the nozzle 31 is attached to the front-end | tip. As the nozzle 31, for example, a nozzle 216, a flat nozzle 920, an air curtain 302-306, an air knife 392-396, etc. manufactured by SILVENT are used as in the third embodiment. The flexible hose 30 has a structure that can hold a set shape unlike a vinyl tube or the like.

  In the chamber-type ion transport ionization apparatus of the present embodiment having the above-described configuration, the flexible hose 30 is attached to the blow-out portion, and the nozzle 31 is attached to the tip of the flexible hose 30, thereby implementing the first to third embodiments. In addition to the effects and effects similar to those of the embodiment, dust and the like attached to the charged body can be removed with high efficiency by discharging an ionized airflow onto the charged body at a high speed and removing electricity. Further, by selecting various nozzles 31, the ionized airflow can be widened in a conical shape at a wide angle or in an air curtain shape, so that the ionized airflow can be controlled in accordance with the object to be neutralized. Furthermore, by using a nozzle that can adjust the opening of the nozzle, the ejection speed of the ionized airflow can be easily changed.

[5. Fifth Embodiment]
In the present embodiment, the shielding part and the blowing part are integrated. As shown in FIG. 6, in the present embodiment, an opening (a hole having a diameter of about 1φ) 40 that can shield X-rays or the like is formed in a part (for example, a side surface) of a chamber downstream of the ionization source 4. One or a plurality are formed in accordance with the static elimination object. In the present embodiment, these openings 40 function as a shielding part and a blowing part.

  In the chamber-type ion transport ionization apparatus of the present embodiment having the above-described configuration, a plurality of openings 40 that can shield X-rays and the like are formed in a part of the chamber on the downstream side of the ionization source 4. Thus, at the same time as shielding, the ionized airflow can be ejected at a high speed toward the static elimination target. As will be described below, the present embodiment is very effective in removing static electricity by blowing an ionized air current into a narrow place such as a gap between glass substrates in a cassette at a high speed.

Next, a more specific example using this embodiment will be described.
(Example 2)
In a liquid crystal or semiconductor manufacturing process, a multistage cassette is used to store and transport glass substrates and wafers. Since the glass substrates and wafers housed in the multi-stage cassette form a capacitor as described above, the overall potential becomes high, and it becomes more difficult to remove the charges from the individual glass substrates and wafers.

  FIG. 7 shows an example in which the chamber type ion transport ionization apparatus of the present embodiment is installed on the side surface of such a glass substrate and wafer cassette. That is, as shown in FIG. 7, in this embodiment, the chamber type ion transport ionization apparatus shown in FIG. 6 is disposed on the opposite side portion of the multistage cassette 51 containing the glass substrate 50. ing. Also, a plurality of openings 40 functioning as a shielding part and a blowing part are provided toward the gap between the glass substrate and the wafer, and an ionized air current is blown into the gap between the glass substrate and the wafer from these openings 40 at a high speed. It is comprised so that static elimination can be performed.

  In this case, it is necessary to adjust the number of chamber-type ion transport ionizers according to the dimensions of the glass substrate and the wafer. Further, the chamber type ion transport ionization apparatus can be integrated with the cassette.

(Example 3)
In liquid crystal and semiconductor manufacturing processes, suction stages are used for various purposes such as alignment, heating, cooling, and exposure. However, when the glass substrate or the wafer comes into contact with or peels off from the surface of the suction stage, static electricity is generated, which causes the performance deterioration or destruction of the semiconductor element due to the discharge and electrostatic suction of dust.

  As a method for solving such a problem, ions are supplied to the gap where the glass substrate or wafer is peeled off from the adsorption stage, and the back side of the glass substrate or wafer holding the electrostatic charge and the surface of the adsorption stage are removed. The method to do is effective.

  FIG. 8 shows an example in which the chamber type ion transport ionization apparatus of this embodiment is installed on the side of such a glass substrate and wafer adsorption stage. That is, as shown in FIG. 8, in this embodiment, the chamber ion transport ionization apparatus shown in FIG. 6 is arranged along one side of the upper surface of the adsorption stage 60, and serves as a shielding part and a blowing part. A plurality of functioning openings 40 are provided toward the gap between the glass substrate 62 and the suction stage 60 separated from the suction stage 60 by the push-up pins 61. Then, by blowing an ionized air flow at a high speed toward the gap between the glass substrate 62 and the adsorption stage 60 from these openings 40, the back surface side of the glass substrate 62 and the surface of the adsorption stage 60 can be neutralized.

[6. Sixth Embodiment]
In the present embodiment, an ionization region by X-rays or the like is widened, and the amount of generated ions can be increased. As shown in FIG. 9, in this embodiment, the chamber on the downstream side of the ionization source 4 has a conical shape or a quadrangular pyramid shape according to the radiation angle of the ionization source 4 in order to widen an ionization region by X-rays or the like. Has been spread. Further, like the second embodiment shown in FIG. 2, the shielding portion is constituted by two punching plates 10a and 10b provided with a large number of pores 11 having a diameter of about 3φ, and these two punching plates. 10a and 10b are installed so as to be separated from each other by about 3 mm and so that the pores 11 do not overlap.

  In the chamber ion transport ionization apparatus of the present embodiment having the above-described configuration, when an ionization source (for example, a soft X-ray head) 4 that can emit X-rays or the like at a wide angle is used, the ionization source is used. By expanding the downstream chamber 4 into a conical shape or a quadrangular pyramid shape according to the radiation angle, the ionization region by X-rays or the like is expanded, so that the amount of generated ions can be greatly increased.

[7. Seventh Embodiment]
In the present embodiment, a shielding portion is also provided on the upstream side of the ionization source so that X-rays and the like do not leak from the inflow port (tube fitting 2) of air or non-reactive gas (N2 gas or the like). In the present embodiment, as shown in FIG. 10, the two punching plates 10a and 10b provided with many pores 11 having a diameter of about 3φ are also separated from each other by about 3 mm on the upstream side of the ionization source 4. And the shielding part formed by shifting so that the pore 11 may not overlap is formed.

  In the chamber type ion transport ionization apparatus of the present embodiment having the above-described configuration, the flow of air or a non-reactive gas (such as N2 gas) is provided by providing a shielding portion on the upstream side of the ionization source 4. It is possible to prevent X-rays and the like from leaking from the entrance.

[8. Eighth Embodiment]
The present embodiment is configured to irradiate X-rays or the like from the side surface of the chamber or toward the upstream side of the airflow in order to prevent leakage of X-rays or the like from the shielding structure downstream of the ionization source. is there. When irradiating X-rays or the like toward the partition walls or the shielding plates as in the above embodiments, the partition walls or the shielding plates largely block the air flow passages, so that a large turbulence occurs, thereby reducing the amount of ions. Decrease.

  Therefore, in this embodiment, the opening of the shielding plate made of the two punching plates on the downstream side of the ionization source 4 is increased so that the diameter is about 5 mm to reduce the turbulence of the air flow, The decrease is reduced. Therefore, in the embodiment shown in FIG. 11, an ionization source is disposed so as to irradiate at right angles to the air flow direction so that the downstream shielding plate can be irradiated in a direction not directly irradiated. In the embodiment shown in FIG. 12, the ionization source is arranged so that irradiation can be performed in the direction opposite to the air flow direction. In the present embodiment, in order to prevent leakage of X-rays from the tube fitting, a shielding portion is provided on the upstream side of the ionization source as in the seventh embodiment.

  In the chamber-type ion transport ionization apparatus of the present embodiment having the above-described configuration, the ionization source of the ionization source is configured by irradiating X-rays or the like from the side surface of the chamber or toward the upstream side of the airflow. Since it is possible to prevent leakage of X-rays and the like from the downstream shielding portion, the opening of the shielding plate made of two punching plates on the downstream side of the ionization source can be increased. As a result, the turbulence of the air current can be reduced, and the decrease in the amount of ions can be reduced.

[9. Ninth Embodiment]
In this embodiment, the chamber type ion transport ionization apparatus of the present invention is incorporated into an air transportation system. Generally, in an air transportation line for powder and resin pellets, static electricity is generated because friction and contact are repeated inside the air transportation pipe, and the powder and resin pellets adhere and accumulate inside the transportation pipe.

  In order to solve such a problem, the chamber ion transport ionization apparatus of the present embodiment is configured as follows. That is, as shown in FIG. 13, a bypass pipe 71 having a predetermined diameter is provided on the side of the air transport pipe 70, and an ionization part and a shielding part similar to the above are formed therein. Further, a filter 72 is provided on the inflow side from the air transport pipe 70 to the bypass pipe 71 so that powder and resin pellets moving in the air transport pipe 70 do not flow into the bypass pipe 71.

  In the chamber type ion transport ionization apparatus of the present embodiment having the above-described configuration, the air in the air transport pipe 70 is fed into the bypass pipe 71 provided on the side of the air transport pipe 70, and the air Is ionized by the ionization source 4, and the positive and negative ions are sent again to the pneumatic transport pipe 70 through the shield. Therefore, unlike the above embodiments, it is not necessary to separately introduce the ion carrier gas into the chamber type ion carrier ionizer. Moreover, since the blowing part of the chamber type ion transport ionization apparatus of this embodiment corresponds to the joining part of the bypass pipe 71 and the air transport pipe 70, it is not necessary to attach a nozzle or the like.

[10. Other Embodiments]
In addition, this invention is not limited to embodiment mentioned above, The various aspects as shown below are also possible. That is, the specific shape of each member, the mounting position, and the method can be changed as appropriate. For example, the shape of the shielding part is not limited to the partition walls 7 and 7 as shown in FIG. 1 and the punching plates 10a and 10b as shown in FIG. 2, but from a soft X-ray, a low energy electron beam, or a radioisotope that travels straight. Any shape may be used as long as radiation or the like does not leak to the outside and the generated positive and negative ions can be transported.

  The ionization source 4 is not limited to a soft X-ray, a low energy electron beam, an ultraviolet ray or creeping discharge generation part, or a radioisotope, and may be one that does not generate ozone, generate dust, or generate electromagnetic noise due to ionization. For example, other electromagnetic waves or beams can be used.

DESCRIPTION OF SYMBOLS 1 ... Ionization chamber 1a ... Tip part 2 ... Tube fitting 3 ... Ion generator 4 ... Ionization source 5 ... Control device 6 ... Cable 7 ... Partition 10 ... Punching plate 11 ... Fine pore 20, 22, 31 ... Nozzle 21 ... Resin back 30 ... Flexible hose 40 ... Opening 50 ... Glass substrate 51 ... Cassette 60 ... Suction stage 61 ... Push-up pin 62 ... Glass substrate 70 ... Air transport pipe 71 ... Bypass pipe 72 ... Filter S ... Charged body

Claims (2)

An ionization unit that ionizes a part of the ion carrier gas supplied into the chamber, and a chamber having a blowout unit that supplies the ion carrier gas toward the charged body,
The ionization unit includes an ionization source built in the chamber, and a control device that is provided outside the chamber and controls the amount of ions generated by the ionization source,
A chamber type ion-conveying ionization apparatus, wherein the chamber is expanded in a conical shape or a pyramid shape in accordance with a radiation angle of the ionization source on the downstream side of the ionization source. An ionization unit that ionizes a part of the ion carrier gas supplied into the chamber, and a chamber having a blowout unit that supplies the ion carrier gas toward the charged body,
The ionization unit includes an ionization source built in the chamber, and a control device that is provided outside the chamber and controls the amount of ions generated by the ionization source,
The chamber type ion transport ionization apparatus, wherein the chamber is a bypass pipe provided at a side portion of an air transport pipe.

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