JP4679813B2 - Particle adhesion preventing apparatus and method, atmospheric transfer apparatus, vacuum transfer apparatus, and semiconductor manufacturing apparatus - Google Patents

Description

  The present invention relates to an apparatus for preventing adhesion of particles, which are fine particles that cause contamination, for example, a particle adhesion preventing apparatus in a semiconductor or flat display panel manufacturing apparatus.

  As clean rooms are being cleaned up and the problem of the cleanliness of the environment in which a manufacturing apparatus such as a semiconductor or a liquid crystal display device is arranged has been reduced, particles generated in the manufacturing apparatus have become a problem.

  Conventionally, modules that transport substrates of semiconductors and liquid crystal display devices in the manufacturing equipment in the air have introduced air through a fan filter unit (FFU) that removes particles that become dust to prevent particles from entering. ing.

  FIG. 1 shows an outline of a semiconductor substrate atmospheric transfer module 10 in a general semiconductor manufacturing apparatus. The semiconductor substrate 1 is supported by a transfer arm 2 and transferred to a necessary place. The transfer arm 2 can be moved up and down or left and right and rotated by a driving device 3. The atmospheric transfer module 10 is separated from the outside of the module or another module such as a load lock chamber by a gate valve 4, and the gate valve 4 is opened only when necessary. An air cleaning FFU 5 is provided in the upper part of the atmospheric transfer module 10, and air is introduced into the transfer chamber after particles that have an adverse effect on the semiconductor substrate and the device are removed by the FFU 5.

  However, since the transport module 10 includes the robot mechanism for transporting the substrate as described above, particles are generated in the module due to friction between the lubricant and the members. FFU is ineffective for particles generated in such devices or modules. In addition, particles and molecules having a particle size equal to or smaller than the particle size to be removed cannot be removed and enter the apparatus. As described above, the particles generated in the apparatus and the particles entering from the outside of the apparatus move by receiving a force such as an inertial force, gravity, or electrostatic force, and adhere to the semiconductor substrate. If the surface of the semiconductor substrate is contaminated by this, problems such as a decrease in the yield of semiconductor devices occur.

  Furthermore, in the load lock chamber adjacent to the atmospheric transfer module, when vacuuming from atmospheric pressure to vacuum, or during nitrogen purging when returning from vacuum to atmospheric pressure, particles are wound up and adhered to the substrate. There was a case. In addition, as a result of adiabatic expansion due to rapid evacuation, particles may be generated due to condensation of water and ice. Conventionally, the introduction rate of nitrogen gas to be introduced is slowed so that particles are not generated or wound up, but the throughput of the entire apparatus is reduced.

  Regarding such problems, there is a known cleaner that blows ion air when the transfer arm is not in use and blows off particles that have been adsorbed by static electricity, etc., and adsorbs them to the filter. And used for static elimination of arm surface charges (see Patent Document 1).

JP-A-9-283597

  An object of this invention is to provide the apparatus and method which prevent the adhesion of a particle effectively in view of the said problem.

  In the first aspect of the present invention, in order to prevent particles from adhering to a member, a particle charging device for charging particles and an electric field forming device for forming an electric field having the same polarity as the charged polarity of the particles around the member With.

  According to the present invention, it is possible to effectively prevent the adhesion of particles by utilizing the repulsive force due to static electricity, and in particular, it is possible to prevent the adhesion of particles having a small particle size, which will become a problem in the future.

  The particle prevention device according to the present invention can be used in a transfer device, a load lock chamber, a vacuum processing chamber, or a substrate inspection device.

  Examples of a member to be prevented from adhering particles include a member disposed in a transfer device, a load lock chamber, a vacuum processing chamber, or a substrate inspection device, and particularly a substrate to be processed which is a semiconductor wafer or a flat display panel. .

  Examples of the particle charging device include an ion generator using corona discharge, an ultraviolet generator, a gas plasma generator, an ionizing radiation generator, and an electron gun.

  Furthermore, the electric field forming device can include a power source that is directly connected to the member or connected to a member disposed around the member, and the size of the electric field by the electric field forming device is the size of the particle. It can also be set according to.

  Furthermore, a reverse polarity electric field forming device that forms an electric field of reverse polarity may be provided in the vicinity of the member to trap particles.

  In the second aspect of the present invention, in an atmospheric transfer device that transfers a substrate to be processed, an air cleaning filter that introduces air into the device, a particle charging device that charges particles in the device, and the substrate to be processed or its surroundings And an electric field forming device for forming an electric field having the same polarity as the charged polarity of the particles.

  In a third aspect of the present invention, in a vacuum transfer processing apparatus for transferring or processing a substrate to be processed, a particle charging device for charging particles, and an electric field having the same polarity as the charged polarity of the particles on the substrate to be processed or around it And an electric field forming device for forming the.

  In the fourth aspect of the present invention, in a semiconductor manufacturing apparatus for transporting and processing a semiconductor substrate, a particle charging device for charging particles in a space in which the semiconductor substrate is arranged, and the semiconductor substrate or its surroundings have the same charging polarity as the particles An electric field forming device for forming a polar electric field.

  In a fifth aspect of the present invention, particle adhesion prevention includes a particle charging step for charging particles in a room in which a member is disposed, and an electric field forming step for forming an electric field having the same polarity as the particle charging polarity around the member. Provide a method.

Prior to describing the embodiments, the principle of the present invention will be described.
The adhesion of the particles to the semiconductor substrate (wafer) occurs when the particles cannot get on the airflow from the FFU to the exhaust system, and the particles are separated from the airflow and fall or adhere to the substrate. In general, there are the following theories (1) to (6) as kinetic theory or force for explaining the motion of particles in gas.

(1) Brownian motion This is a random motion of particles caused by collision with gas molecules that are in thermal motion, and can be evaluated by a diffusion coefficient. The smaller the particles, the greater the effect of Brownian motion. As a result, the particles move out of the gas stream line and adhere to the wafer.

(2) Inertial motion Due to the mass of the particles moving in the fluid, the particles try to go straight without being able to follow the change in the gas flow. The effect can be evaluated by the relaxation time. The larger the particle, the greater the effect.

(3) Gravity It can be evaluated by the final sedimentation velocity, and larger particles have a larger effect.

(4) Electrostatic force It can be evaluated by the final sedimentation speed, and the smaller the particles, the greater the effect.

(5) Thermophoretic force A force acting on the difference in Brownian motion when there is a temperature gradient in the medium, and can be evaluated by the thermophoretic coefficient.

(6) Diffusion migration force This is a force that works when there is a concentration gradient of gas components. This is negligible in the airflow in the apparatus.

  When the particle size spreads over a wide area across the mean free path of gas molecules (in the case of air, 20 ° C., 65 nm at 1 atm), it is controlled by the particle diameter φ as shown below. Dynamic movement mechanism is different.

(A) φ> 450 nm
If the diameter is greater than 450 nm, gravity settling acts as the dominant force.

(B) φ <90 nm
On the other hand, when the diameter is smaller than 90 nm, Brownian diffusion is dominant and shows almost the same behavior as gas.

  When the particle diameter φ is in the range of 90 nm <φ <450 nm, there are the following three cases.

  (C) When the particles are charged at 90 nm <φ <450 nm, the electrostatic force is dominant. When particles are not charged (d) 90 nm <φ <300 nm, brown diffusion is dominant as in (b), and (e) gravitational settling is dominant at 300 nm <φ <450 nm. is there.

  At present, particles of about 450 nm or more do not adhere to a semiconductor substrate or the like, which is the target of contamination prevention, and the electrostatic force of approximately 90 nm <φ <450 nm is dominant in the range of contamination. Therefore, it is expected that particles in this range can be controlled by static electricity. Therefore, the present inventors conducted the following experiment.

FIG. 2 shows an explanatory diagram of the experimental apparatus.
In the experimental apparatus, a duct (wind tunnel) 15 was installed under the FFU 5 and the lower part thereof was divided into two rooms 17 and 18 by a partition plate 16. The wind flows from top to bottom, and if the particles flow in, the same number of particles fall in each of the rooms 17 and 18. In the first chamber 17, a semiconductor wafer 11 is arranged, and an ion generator (ionizer) 19 that generates negative ions and a DC power source 7 that applies a negative potential to the wafer 11 are provided. In the second chamber 18, the semiconductor wafer 12 is disposed so as to be left unattended.

The experiment was performed by removing the FFU 5 for a predetermined time (2 hours) and allowing particles to flow. A negative voltage of 4 kV or higher was applied to the wafer 11 while generating negative ions in the first chamber 17 by the ion generator 19. The wafer W12 in the second room was left as it was. The atmosphere of the duct 15 from which the FFU 5 was removed was ISO class 3-4. That is, the atmosphere has 10 ³ to 10 ⁴ particles of 100 nm or more per 1 cm ³ . The air volume was 0.25 to 0.3 m / s. After the elapse of a predetermined time, the result of counting particles of 0.13 μm or more is that, on the wafer 12 left as usual, although the number of particles increased from 10 to 87, the ion generator side On the other wafer 11, only 13 to 22 and 9 increased. Moreover, all the particles increased on the wafer 11 were larger than 10 μm.

  From the experimental results, it was found that if the particles are charged and a voltage having the same polarity as the charging polarity is applied to the wafer, the number of particles adhering to the wafer hardly increases. In particular, a remarkable effect was observed for small particles.

FIG. 3 shows the applied voltage dependence of the particle removal effect.
In the graph of FIG. 3, the horizontal axis represents the applied voltage to the wafer, and the vertical axis represents the number of particles adhering to the wafer. The graph connecting the points indicated by the black diamonds shows the result using the ion generator, and the graph connecting the points indicated by the squares is the result of leaving without using the ion generator. However, in this example, a voltage is applied to both wafers. The graph connecting the points indicated by triangles is the particle adhesion rate,
Particle adhesion rate (%) = (number of wafer particles on ion generator side / number of particles on left wafer) × 100
Is calculated.

  The graph of particle adhesion shows the results well. When a voltage of −4000 V is applied to the wafer, almost no particles adhere. At −500 V, only about 30 particles are attached, at 0 V, about 150 particles are attached, and at +100 V, a very large number of particles are attached. This indicates that since the particles are negatively charged, they are repelled or attracted depending on the polarity of the potential of the wafer.

  4 and 5 are diagrams showing the relationship between particles and particle sizes. FIG. 4 shows the particle size dependency of the number of particles, and FIG. 5 shows the particle size dependency of the particle adhesion rate.

  As in FIG. 3, the horizontal axis represents the applied voltage, the vertical axis represents the number of particles, and the particles have a particle size of 0.13 to 0.5 μm, 0.5 to 10.0 μm, 10.0 μm or more. It is divided into two and the number is counted.

  When particles of 0.13 to 0.5 μm are left without using an ion generator, the particles are always counted on the wafer as shown by the white circle graph. For example, even when −4000 V is applied to the wafer, particles are slightly adhered. On the other hand, as shown in the black circle graph, when an ion generator is used, no adhesion of particles is observed at all even when a voltage of about −500 V is applied to the wafer. However, the number of adhering particles increases as the applied voltage approaches 0 V, and the number increases rapidly when a positive potential is applied. This indicates that particle adhesion is promoted by charging the particles by the ion generator and applying a voltage of the same polarity to the wafer. For particles of 10.0 μm or more, as shown in the square graph, even if an ion generator is used (black square), the number of particles attached to the wafer is not used (white square). However, even if -4000V is applied, it cannot be reduced to zero. This indicates that particles having a large particle size act as a dominant force of gravity and are difficult to control with electrostatic force. Referring to the adhesion rate for each particle size in FIG. 5, it can be clearly seen that particles having a small particle size respond greatly to the control of electrostatic force.

  As described above, it has been found that the smaller particles are easier to control with electrostatic force, and the electrostatic force effectively acts on the particles on the semiconductor substrate, which is currently a problem.

  The present invention uses the electrostatic repulsion force between charged particles and the same polarity electric field around the contamination prevention target to prevent the particles from adhering to the contamination prevention target.

  Embodiments of the present invention will be described below with reference to the drawings. However, the embodiments are merely examples, and the present invention is not limited to the embodiments. In the embodiments, a semiconductor substrate is described as an example of the substrate. However, the substrate is not limited to a semiconductor wafer, and may be a flat panel display or other substrate to be processed. The particles that cause defects indicate fine particles. , Dust, dust, dust, dust, powder, and molecular contaminants.

Embodiment 1
FIG. 6 shows the atmospheric conveyance device (loader module) of the first embodiment. In this example, particles in the atmosphere are charged positively or negatively using an ion generator, and the charged particles are repelled by an electric field of the same polarity created around the semiconductor substrate. To prevent adhesion.

  FIG. 6 shows an atmosphere transport device 20 similar to that shown in FIG. 1 provided with a direct current (DC) power supply 7 and an ion generator 6 using corona discharge. A direct current (DC) power source 7 is connected to the semiconductor substrate 1 and applies a voltage to the semiconductor substrate 1 when being transported or stored. As a result, a potential having the same polarity as the applied voltage appears on the surface of the semiconductor substrate 1. At the same time, the ions from the ion generator 6 give the particles in the device 20 charges having the same polarity as the potential applied to the semiconductor substrate 1. Since the particles to which such charges are applied receive an electrostatic repulsive force with the semiconductor substrate 1, they are exhausted without reaching the semiconductor substrate 1, and contamination can be prevented. The charging polarity of the particles may be either positive or negative, and the same effect can be obtained by setting the charge of the particles and the voltage applied to the semiconductor substrate to the same polarity.

  In addition, the charging of particles is not limited to the ion adhesion by an ion generator using corona discharge, but by other principles, the ion adhesion by an ion generator, the photoelectron emission by ultraviolet light emitted from an ultraviolet light source, the ionizing radiation generator and the radioactive isotope. An appropriate method such as ionization of particles by ionizing radiation emitted from an element or adhesion of electrons emitted from an electron gun can be used. At this time, it is necessary to apply a voltage having the same polarity as the charged polarity of the particles to the semiconductor substrate 1.

  When ultraviolet rays are used for charging the particles, ozone may be generated, and an exhaust system may be further provided. In addition, by replacing the atmosphere with an inert gas such as nitrogen, argon, or helium, it is not necessary to install an exhaust facility if oxygen that is the cause of ozone generation is removed, for example, at a shorter wavelength of 300 nm or less. Higher power ultraviolet rays can be used, and the charging efficiency of particles can be improved.

  Here, the particle as a contaminant includes a particle having a size of several mm to several nm and a molecular contamination having a size of several nm or less, and if the above charging method can be applied, The shape, particle size, material, and phase state are not limited.

  It is desirable that the voltage is applied to the semiconductor substrate after the semiconductor substrate has been placed on the transfer arm and there is sufficient space between the semiconductor substrate and the surrounding structure so that no discharge will occur. It is necessary to stop the application of voltage in advance so as not to cause the failure. If the substrate is charged even after the voltage applied to the semiconductor substrate is completed, the charge can be removed by slightly applying a voltage of the opposite polarity.

[Embodiment 2]
Next, an example in the vacuum transfer device 30 provided in the subsequent stage of the load lock module shown in FIG. 7, for example, will be described. Similar to the atmospheric transfer device 10, the vacuum transfer device 30 includes a gate valve 4, a transfer arm 2 that transfers the semiconductor substrate 1, and a gas inlet 9. Since there is no air in the apparatus 20, an ion generator using a corona discharge or the like using a discharge between electrodes cannot be used. However, the ultraviolet light generator 8 can be provided to irradiate the particles in the device 20 with ultraviolet rays, and the particles can be positively charged by photoelectron emission. Since ozone is not generated in vacuum, ultraviolet rays with a short wavelength can be used with high output, and the charging effect can be enhanced as compared with the atmosphere.

  In addition, an ion generator, an ionizing radiation generator, a radioisotope, an electron gun, etc. that can be used even in a vacuum can be used. For these, the flight distance of ions, radiation, and electrons is longer than in the atmosphere, so that a wider range of particles can be charged. Furthermore, the particles may be charged by generating plasma while introducing gas from the gas inlet 9. In any case, a voltage having the same polarity as the charged particles from the DC power source 7 is applied to the semiconductor substrate 1.

  The particle charging device may be installed near the particle generation source, between the particle generation source and the semiconductor substrate, or at a location where particles accumulate. For example, the vicinity of the gas inlet as shown in FIG. 7 or the lower part of the apparatus where particles are likely to accumulate as shown in FIG. 8 is effective.

[Embodiment 3]
In the first and second embodiments, an example in which the present invention is applied to a semiconductor substrate transfer apparatus has been described. However, contamination prevention according to the present invention is not limited to a transfer apparatus, but is also a process apparatus, a load lock module, a semiconductor substrate storage apparatus, and a semiconductor. It can be applied to inspection equipment. Depending on the atmosphere of the device to be applied (vacuum, air, or inert gas), a suitable particle charging method may be selected and a voltage having the same polarity as the particle charging may be applied to the semiconductor substrate. . In addition, the charging device can be appropriately disposed as in the first and second embodiments.

  Since the semiconductor inspection apparatus is also an apparatus for inspecting particles on a substrate, it is necessary to strictly control the generation of particles in the apparatus, and the effect of the application of the present invention is great. In addition, it is effective to attach a small device according to the present invention to a semiconductor storage device.

[Embodiment 4]
In the first to third embodiments, a voltage is directly applied to the semiconductor substrate to repel the charged particles. Instead of directly applying the voltage to the semiconductor substrate, the semiconductor substrate is chucked, clamped, transported arm, a holding table, etc. A voltage may be applied to. FIG. 9 shows an example in which a voltage is applied to the transfer arm 2 in the same atmospheric transfer device 20 as FIG. In any case, an electric field that gives a repulsive force to charged particles around the semiconductor substrate may be formed. This embodiment is particularly effective when a voltage cannot be directly applied to the semiconductor substrate.

[Embodiment 5]
In the first to fourth embodiments, the semiconductor substrate is cited as an object of pollution prevention. However, as described above, the object of pollution prevention is not limited to the semiconductor substrate. The present invention is also applicable to prevention of particle contamination such as flat panel display (FPD) substrates, semiconductor substrate transfer arms, processing chamber inner walls, processing chamber windows, reticles, masks, lenses, mirrors, and substrate inspection equipment. it can. However, a voltage composed of an insulator such as an FPD substrate, a processing chamber window, a reticle, a mask, a lens, or a mirror cannot directly apply a voltage, but it can be applied to a surrounding conductor. That's fine. As for the windows, lenses, and mirrors in the processing chamber, the surface can be coated with a transparent conductive film, and by applying a DC voltage, particles can be prevented from adhering to the surface.

[Embodiment 6]
The charging device is used to positively charge the uncharged particles in the atmosphere, but the charged particles are not charged to the already charged particles in the atmosphere without using the charging device. A pollution prevention effect can be obtained simply by applying a voltage having the same polarity as the polarity to the pollution prevention target. In this example, only a DC electric field is formed around the contamination prevention object without using a charging device. Even in the vacuum chamber of the plasma processing apparatus, the same effect can be obtained when no plasma is generated.

[Embodiment 7]
The magnitude of the voltage applied to the semiconductor substrate varies depending on the size of the target particle, as can be seen from the above-described experiment (see FIGS. 2 to 5). Therefore, in this example, an experiment was performed in advance, and the applied voltage was determined according to the size of the particles.

[Embodiment 8]
In this example, in order to further enhance the effect of preventing particle contamination, a member to which a voltage having a reverse polarity to the voltage applied to the substrate is placed in the vicinity of the substrate to increase the potential gradient, and the member efficiently. Trapped charged particles. Thereby, the contamination prevention effect can be further enhanced.

It is a figure which shows the conventional atmospheric conveyance apparatus. It is a figure which shows the experimental apparatus used as the premise of this invention. It is a graph which shows the voltage dependence of the particle removal effect. It is a graph which shows the particle size dependence of the number of adhesion particles. It is a graph which shows the particle size dependence of a particle adhesion rate. It is a figure which shows the atmospheric conveyance apparatus of this invention. It is a figure which shows the vacuum conveying apparatus of this invention. It is a figure which shows the vacuum conveyance apparatus of this invention which has arrange | positioned UV generator in the lower part. It is a figure which shows the atmospheric conveyance apparatus of this invention by which a DC voltage is applied to a conveyance arm.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 11, 12 ... Semiconductor substrate 2 ... Transfer arm 3 ... Drive apparatus 4 ... Gate valve 5 ... Air purifying filter (FFU)
6, 19 ... Ion generator 7 ... DC power supply 8 ... UV light generator 15 ... Duct (wind tunnel)
10, 20 ... Atmospheric transfer device 30 ... Vacuum transfer device

Claims (21)

A particle charging device for charging particles in a room atmosphere in which members are arranged;
An electric field forming device for forming an electric field having the same polarity as the charged polarity of the particles around the member;
(1) The room is in a transfer device, and the member is a member in the transfer device,
(2) The chamber is a load lock chamber, and the member includes a member in the load lock chamber, and
(3) The room is in a substrate inspection apparatus, and the member is a member in the substrate inspection apparatus,
One of the following:
A particle adhesion preventing apparatus for preventing the particles from adhering to the member.   The particle adhesion preventing apparatus according to claim 1, wherein the member is a substrate to be processed.   The particle adhesion preventing apparatus according to claim 2, wherein the substrate to be processed is a semiconductor wafer.   The particle adhesion preventing apparatus according to claim 2, wherein the substrate to be processed is a substrate of a flat display panel. 2. The particle adhesion preventing device according to claim 1, wherein the particle charging device is one of a device using corona discharge, an ultraviolet ray generator, an ionizing radiation generator, and an electron gun. A particle charging device for charging particles in a room atmosphere in which members are arranged;
An electric field forming device for forming an electric field having the same polarity as the charged polarity of the particles around the member;
With
The particle charging apparatus, devices utilizing corona discharge, ultraviolet ray generator device, ionizing radiation generator and any one der Rupa Tikuru adhesion preventing device of the electron gun. 7. The particle adhesion preventing device according to claim 6, wherein the particle charging device is an ultraviolet ray generator, an indoor atmosphere in which the member is disposed is air, and an exhaust device that exhausts ozone generated by the ultraviolet ray is provided. The particle adhesion preventing device according to claim 6, wherein the particle charging device is an ultraviolet ray generator and replaces the atmosphere with an inert gas before operating the ultraviolet ray generator. The particle adhesion preventing device according to claim 6, wherein the particle charging device is an ionizing radiation generating device, and the ionizing radiation generating device uses ionizing radiation emitted from a radioisotope. The chamber is a processing chamber, and the member is a member in the processing chamber.
Particle adhesion prevention device. The electric field forming apparatus, particle adhesion prevention device according to claim 1 or 6 comprising a power source connected to said member. The electric field forming apparatus, particle adhesion prevention device according to claim 1 or 6 having a power supply connected to a member which is arranged around the member. Said member is made of an electrically insulating material, a conductive member is provided on its surface, the electric field forming apparatus particle adhesion prevention device according to claim 1 or 6 having a power supply connected to the conductive member. The strength of the electric field due to the electric field forming apparatus, particle adhesion prevention device according to claim 1 or 6 is set according to the size of the particles. It includes a reverse polarity field forming device for forming an electric field opposite polarity electric field formed around the member in the vicinity of said member, particle adhesion prevention device according to claim 1 or 6 to trap the particles. A particle charging device for charging particles in a room atmosphere in which members are arranged;
An electric field forming device for forming an electric field having the same polarity as the charged polarity of the particles around the member;
A reverse polarity electric field forming device for forming an electric field having a reverse polarity to the electric field formed around the member;
With
  The reverse polarity electric field forming device is provided in the vicinity of the member, and prevents the particles from adhering to the member by trapping the particles. An atmospheric transfer device for transferring a substrate to be processed,
An air cleaning filter for introducing air into the apparatus; a particle charging apparatus for charging particles in the apparatus; and an electric field that forms an electric field having the same polarity as the charged polarity of the particles around the substrate to be processed or the substrate to be processed An atmospheric conveyance device comprising a forming device. The particle charging apparatus, devices utilizing corona discharge, ultraviolet ray generator device, air transport device according to any one der Ru claim 17 of the ionizing radiation generator and an electron gun. A vacuum transfer device for transferring a substrate to be processed,
A particle charging device for charging particles in the device, and an electric field forming device for forming an electric field having the same polarity as the charged polarity of the particles around the substrate to be processed or the substrate to be processed ;
Equipped with a,
The particle charging apparatus, devices utilizing corona discharge, ultraviolet ray generator device, ionizing radiation generator and any one der Ru vacuum transfer apparatus of the electron gun. In semiconductor manufacturing equipment that transports and processes semiconductor substrates,
A particle charging device for charging particles in a space in which the semiconductor substrate is disposed;
An electric field forming device for forming an electric field having the same polarity as the charged polarity of the particles around the semiconductor substrate or the semiconductor substrate ;
Equipped with a,
The particle charging apparatus, devices utilizing corona discharge, ultraviolet ray generator device, ionizing radiation generator and any one der Ru semiconductor manufacturing device of the electron gun. A particle charging step for charging particles in the room atmosphere in which the member is disposed;
Forming an electric field of the same polarity as the charged polarity of the particles around the member, and
The particle charging step is performed by one of an apparatus using corona discharge, an ultraviolet ray generator, an ionizing radiation generator, and an electron gun.
A particle adhesion preventing method for preventing the particles from adhering to the member.

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