JP4642140B2 - Four-tone photomask, method for using four-tone photomask, and method for manufacturing liquid crystal display device - Google Patents

Four-tone photomask, method for using four-tone photomask, and method for manufacturing liquid crystal display device Download PDF

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JP4642140B2
JP4642140B2 JP2010134739A JP2010134739A JP4642140B2 JP 4642140 B2 JP4642140 B2 JP 4642140B2 JP 2010134739 A JP2010134739 A JP 2010134739A JP 2010134739 A JP2010134739 A JP 2010134739A JP 4642140 B2 JP4642140 B2 JP 4642140B2
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道明 佐野
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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Description

本発明は、液晶表示装置（Ｌｉｑｕｉｄ Ｃｒｙｓｔａｌ Ｄｉｓｐｌａｙ：以下、ＬＣＤと称する）の薄膜トランジスタ（Ｔｈｉｎ Ｆｉｌｍ Ｔｒａｎｓｉｓｔｏｒ：以下、ＴＦＴと称する）などの製造に好適に使用される４階調フォトマスクの製造方法、及びこの４階調フォトマスクの製造方法に用いられるフォトマスクブランクに関する。   The present invention relates to a method of manufacturing a four-tone photomask suitably used for manufacturing a thin film transistor (hereinafter referred to as TFT) of a liquid crystal display (Liquid Crystal Display: hereinafter referred to as LCD) and the like, and The present invention relates to a photomask blank used in the manufacturing method of this four-tone photomask.

光透過率が３段階以上の多段階に変化する多階調フォトマスクが、特許文献１に開示されている。この多階調フォトマスクは、光学素子の屈折面や反射面を創成する際に使用される。   A multi-tone photomask whose light transmittance changes in multiple stages of three or more stages is disclosed in Patent Document 1. This multi-tone photomask is used when creating a refracting surface or a reflecting surface of an optical element.

上記公報記載の多階調フォトマスクは、まず、透光性基板上に形成された金属化合物等の膜上にレジスト膜を形成し、このレジスト膜を露光して描画し、現像して第１レジストパターンを形成する。そして、この第１レジストパターンをマスクにして上記金属化合物等の膜をエッチングする。   In the multi-tone photomask described in the above publication, first, a resist film is formed on a film of a metal compound or the like formed on a light-transmitting substrate, the resist film is exposed, drawn, developed, and developed. A resist pattern is formed. Then, the film of the metal compound or the like is etched using the first resist pattern as a mask.

次に、上記金属化合物等の膜上に再度レジスト膜を形成し、このレジスト膜を露光・描画して現像し、第２レジストパターンを形成する。そして、この第２レジストパターンをマスクにして上記金属化合物等の膜を再度エッチングする。上述のレジストパターンの形成と金属化合物等の膜のエッチングとを所望回数繰り返すことで、多階調のフォトマスクを製造している。   Next, a resist film is formed again on the metal compound film, and the resist film is exposed, drawn and developed to form a second resist pattern. Then, using the second resist pattern as a mask, the metal compound film or the like is etched again. A multi-tone photomask is manufactured by repeating the above-described resist pattern formation and etching of a film of a metal compound or the like a desired number of times.

特開平９−１４６２５９号公報JP 9-146259 A

ところが、上記公報記載の多階調フォトマスクの製造方法では、金属化合物等の膜をエッチングする回数と、そのエッチング加工用のレジストパターンを形成するための露光・描画回数とが同一回数であるため、露光・描画回数が増大してしまう。例えば、光透過率を４段階に変化させる４階調のフォトマスクを製造するためには、露光・描画回数を３回実施しなければならない。   However, in the multi-tone photomask manufacturing method described in the above publication, the number of times of etching a film such as a metal compound is the same as the number of times of exposure / drawing for forming a resist pattern for the etching process. The number of exposure / drawing increases. For example, in order to manufacture a four-gradation photomask that changes the light transmittance in four steps, the number of exposure / drawing operations must be performed three times.

本発明の目的は、上述の事情を考慮してなされたものであり、４階調のフォトマスクをフォトグラフィ工程により少ない描画回数で製造できる４階調のフォトマスクの製造方法、及びこの製造方法に用いられるフォトマスクブランクを提供することにある。   An object of the present invention has been made in consideration of the above-described circumstances, and a manufacturing method of a four-tone photomask capable of manufacturing a four-tone photomask with a small number of drawing operations by a photolithography process, and the manufacturing method. It is to provide a photomask blank used in the manufacturing process.

本発明の第１の態様は、
遮光部、透光部、及びそれぞれ異なる光透過率の第１半透光部と第２半透光部を有し、被転写体上に膜厚が段階的又は連続的に異なるレジストパターンを形成する４階調フォトマスクであって、
前記第１半透光部は、透光性基板の表面に、光半透過性の第１半透光膜が設けられて構成され、
前記第２半透光部は、前記透光性基板の表面に、光半透過性の第２半透光膜が設けられて構成され、
前記第２半透光部と第１半透光部とは露光光の光透過率が異なり、
前記遮光部は、前記透光性基板の表面に、前記第１半透光膜、遮光膜、及び前記第２半透光膜が積層されて構成されることを特徴とする、４階調フォトマスクである。 The first aspect of the present invention is:
A light-shielding portion, a light-transmitting portion, and a first semi-transparent portion and a second semi-transparent portion having different light transmittances, and a resist pattern having different thicknesses is formed stepwise or continuously on the transfer target. A four-tone photomask,
The first semi-transparent portion is configured by providing a light semi-transmissive first semi-transparent film on the surface of the translucent substrate,
The second semi-transparent portion is configured by providing a light semi-transmissive second semi-transparent film on the surface of the translucent substrate,
The second semi-transmission part and the first semi-transmission part have different light transmittances of exposure light,
The four-tone photo, wherein the light-shielding portion is configured by laminating the first semi-light-transmitting film, the light-shielding film, and the second semi-light-transmitting film on the surface of the light-transmitting substrate. It is a mask.

本発明の第２の態様は、
被転写体上に、前記遮光部に対応する部分の膜厚が最も厚く、前記第１半透光部に対応する部分で膜厚が次に厚く、前記第２半透光部に対応する部分で膜厚が薄く、前記透光部に対応する部分で膜がないレジストパターンを形成するものであることを特徴とする、上記第１の態様に記載の４階調フォトマスクである。 The second aspect of the present invention is:
The portion corresponding to the light-shielding portion on the transfer body is the thickest, the portion corresponding to the first semi-transparent portion is the next thickest, and the portion corresponding to the second semi-transparent portion The four-tone photomask according to the first aspect is characterized in that a resist pattern having a thin film thickness and having no film at a portion corresponding to the light transmitting portion is formed.

本発明の第３の態様は、
前記第１半透光部と第２半透光部の、露光光の光透過率が２０〜５０％であることを特徴とする、上記第１又は第２の態様に記載の４階調フォトマスクである。 The third aspect of the present invention is:
The four-tone photo according to the first or second aspect, wherein the first translucent part and the second semi-transparent part have an exposure light transmittance of 20 to 50%. It is a mask.

本発明の第４の態様は、
前記第１半透光膜と前記遮光膜は、互いのエッチングに対して耐性を有する膜であることを特徴とする、上記第１〜第３の態様のいずれかに記載の４階調フォトマスクである。 The fourth aspect of the present invention is:
The four-tone photomask according to any one of the first to third aspects, wherein the first semi-transparent film and the light-shielding film are films having resistance to mutual etching. It is.

本発明の第５の態様は、
前記第２半透光膜と前記遮光膜は、同種のエッチングガス又はエッチング液によって、エッチングが可能な材料からなることを特徴とする、上記第１〜第４の態様のいずれかに記載の４階調フォトマスクである。 According to a fifth aspect of the present invention,
The said 2nd translucent film | membrane and the said light-shielding film | membrane consist of the material which can be etched with the same kind of etching gas or etching liquid, 4 in any one of the said 1st-4th aspect characterized by the above-mentioned. It is a gradation photomask.

本発明の第６の態様は、
前記第１半透光膜は、モリブデンシリサイドを含み、前記第２半透光膜及び前記遮光膜はクロムを主成分とすることを特徴とする、上記第１〜第５の態様のいずれかに記載の４階調フォトマスクである。 The sixth aspect of the present invention is:
The first semi-transparent film includes molybdenum silicide, and the second semi-transparent film and the light-shielding film have chromium as a main component. The four-tone photomask described.

本発明の第７の態様は、
遮光部、透光部、及びそれぞれ異なる光透過率の第１半透光部と第２半透光部を有する、４階調フォトマスクの使用方法であって、
前記第１半透光部は、透光性基板の表面に、光半透過性の第１半透光膜が設けられて構成され、
前記第２半透光部は、前記透光性基板の表面に、光半透過性の第２半透光膜が設けられて構成され、
前記第２半透光部と第１半透光部とは露光光の光透過率が異なり、
前記遮光部は、前記透光性基板の表面に、前記第１半透光膜、遮光膜、及び前記第２半透光膜が積層されて構成される４階調フォトマスクを用いて露光し、被転写体上にレジストパターンを形成し、
前記透光部に対応する部分で、前記被転写体に第１エッチングを施し、
前記レジストパターンのうち前記第２半透光部に対応する部分を除去し、前記被転写体に第２エッチングを施し、
更に、前記レジストパターンのうち前記第１半透光部に対応する部分を除去し、前記被転写体に第３エッチングを施すことを含む、４階調フォトマスクの使用方法である。 The seventh aspect of the present invention is
A method of using a four-tone photomask having a light-shielding portion, a light-transmitting portion, and a first semi-transmissive portion and a second semi-transmissive portion having different light transmittances,
The first semi-transparent portion is configured by providing a light semi-transmissive first semi-transparent film on the surface of the translucent substrate,
The second semi-transparent portion is configured by providing a light semi-transmissive second semi-transparent film on the surface of the translucent substrate,
The second semi-transmission part and the first semi-transmission part have different light transmittances of exposure light,
The light-shielding portion is exposed using a four-tone photomask configured by laminating the first semi-transparent film, the light-shielding film, and the second semi-transparent film on the surface of the translucent substrate. , Forming a resist pattern on the transfer object,
First transfer is performed on the transfer object at a portion corresponding to the translucent portion,
Removing a portion of the resist pattern corresponding to the second semi-translucent portion, and performing a second etching on the transfer object;
Furthermore, it is a method of using a four-tone photomask that includes removing a portion of the resist pattern corresponding to the first semi-translucent portion and performing a third etching on the transferred object.

本発明の第８の態様は、
遮光部、透光部、及びそれぞれ異なる光透過率の第１半透光部と第２半透光部を有し、被転写体上に膜厚が段階的又は連続的に異なるレジストパターンを形成する４階調フォトマスクであって、
前記第１半透光部は、透光性基板の表面に、光半透過性の第１半透光膜が設けられて構成され、
前記第２半透光部は、前記透光性基板の表面に、光半透過性の第１半透光膜と光半透過性の第２半透光膜が積層されて構成され、
前記遮光部は、前記透光性基板の表面に、前記第１半透光膜、前記第２半透光膜及び遮光膜が積層されて構成されることを特徴とする、
４階調フォトマスクである。 The eighth aspect of the present invention is
A light-shielding portion, a light-transmitting portion, and a first semi-transparent portion and a second semi-transparent portion having different light transmittances, and a resist pattern having different thicknesses is formed stepwise or continuously on the transfer target. A four-tone photomask,
The first semi-transparent portion is configured by providing a light semi-transmissive first semi-transparent film on the surface of the translucent substrate,
The second semi-transmissive part is configured by laminating a light semi-transmissive first semi-transmissive film and a light semi-transmissive second semi-transmissive film on the surface of the translucent substrate,
The light-shielding part is configured by laminating the first semi-transparent film, the second semi-transparent film, and the light-shielding film on the surface of the translucent substrate.
This is a four-tone photomask.

本発明の第９の態様は、
被転写体上に、前記遮光部に対応する部分の膜厚が最も厚く、前記第２半透光部に対応する部分で膜厚が次に厚く、前記第１半透光部に対応する部分で薄く、透光部に対応する部分で膜がないレジストパターンを形成するものであることを特徴とする、上記第８の態様に記載の４階調フォトマスクである。 The ninth aspect of the present invention provides
The portion corresponding to the light-shielding portion on the transfer body is thickest, the portion corresponding to the second semi-transparent portion is the next thickest, and the portion corresponding to the first semi-transparent portion The four-tone photomask according to the eighth aspect is characterized in that a resist pattern having no film is formed at a portion corresponding to the light transmitting portion.

本発明の第１０の態様は、
前記第１半透光部と第２半透光部は、露光光の光透過率が２０〜５０％であることを特徴とする、上記第８又は第９の態様に記載の４階調フォトマスクである。 The tenth aspect of the present invention provides
The four-tone photo according to the eighth or ninth aspect, wherein the first semi-transmissive portion and the second semi-transmissive portion have an exposure light transmittance of 20 to 50%. It is a mask.

本発明の第１１の態様は、
前記第２半透光膜と前記遮光膜は、互いのエッチングに対して耐性を有する膜であることを特徴とする、上記第８〜第１０の態様のいずれかに記載の４階調フォトマスクである。 The eleventh aspect of the present invention is
The four-tone photomask according to any one of the eighth to tenth aspects, wherein the second semi-transparent film and the light-shielding film are films resistant to mutual etching. It is.

本発明の第１２の態様は、
前記第１半透光膜と前記遮光膜は、同種のエッチングガス又はエッチング液によってエッチング可能な材料からなることを特徴とする、上記第８〜第１１の態様のいずれかに記載の４階調フォトマスクである。 The twelfth aspect of the present invention provides
The four gradations according to any one of the eighth to eleventh aspects, wherein the first semi-transparent film and the light-shielding film are made of a material that can be etched with the same kind of etching gas or etching solution. It is a photomask.

本発明の第１３の態様は、
前記第２半透光膜は、モリブデンシリサイドを含み、前記第１半透光膜及び前記遮光膜はクロムを主成分とすることを特徴とする、上記第８〜第１２の態様のいずれかに記載の４階調フォトマスクである。 The thirteenth aspect of the present invention provides
The second semi-transparent film includes molybdenum silicide, and the first semi-transparent film and the light-shielding film have chromium as a main component, according to any one of the eighth to twelfth aspects. The four-tone photomask described.

本発明の第１４の態様は、
遮光部、透光部、及びそれぞれ異なる光透過率の第１半透光部と第２半透光部を有する、４階調フォトマスクの使用方法であって、
前記第１半透光部は、透光性基板の表面に、光半透過性の第１半透光膜が設けられて構成され、
前記第２半透光部は、前記透光性基板の表面に、光半透過性の第１半透光膜と光半透過性の第２半透光膜が積層されて構成され、
前記遮光部は、前記透光性基板の表面に、前記第１半透光膜、前記第２半透光膜及び遮光膜が積層されて構成される４階調フォトマスクを用いて露光し、被転写体上にレジストパターンを形成し、
前記透光部に対応する部分で、被転写体に第１エッチングを施し、
前記レジストパターンのうち前記第１半透光部に対応する部分を除去し、前記被転写体に第２エッチングを施し、
更に、前記レジストパターンのうち前記第２半透光部に対応する部分を除去し、前記被転写体に第３エッチングを施すことを含む、
４階調フォトマスクの使用方法である。 The fourteenth aspect of the present invention provides
A method of using a four-tone photomask having a light-shielding portion, a light-transmitting portion, and a first semi-transmissive portion and a second semi-transmissive portion having different light transmittances,
The first semi-transparent portion is configured by providing a light semi-transmissive first semi-transparent film on the surface of the translucent substrate,
The second semi-transmissive part is configured by laminating a light semi-transmissive first semi-transmissive film and a light semi-transmissive second semi-transmissive film on the surface of the translucent substrate,
The light shielding portion is exposed using a four-tone photomask configured by laminating the first semi-transmissive film, the second semi-transmissive film, and the light shielding film on the surface of the translucent substrate, Form a resist pattern on the transfer target,
At a portion corresponding to the light-transmitting portion, a first etching is performed on the transfer object,
Removing a portion of the resist pattern corresponding to the first semi-translucent portion, and performing a second etching on the transfer object;
Furthermore, the portion corresponding to the second semi-transparent portion of the resist pattern is removed, and a third etching is performed on the transfer object.
This is a method of using a four-tone photomask.

本発明の第１５の態様は、
前記第１エッチングは、被転写体における、第１膜、第２膜、及び第３膜に対して施され、
前記第２エッチングは、被転写体における、第２膜及び第３膜に対して施され、
前記第３エッチングは、被転写体における、第３膜に対して施されることを特徴とする、上記第７又は第１４の態様に記載の４階調フォトマスクの使用方法である。 The fifteenth aspect of the present invention provides
The first etching is performed on the first film, the second film, and the third film in the transfer object;
The second etching is performed on the second film and the third film in the transfer object,
The method for using a four-tone photomask according to the seventh or fourteenth aspect, wherein the third etching is performed on a third film in the transfer target.

本発明の第１６の態様は、
前記レジストパターンの除去は、アッシングによることを特徴とする、上記第７、第１４又は第１５の態様に記載の４階調フォトマスクの使用方法である。 The sixteenth aspect of the present invention provides
The method of using a four-tone photomask according to the seventh, fourteenth, or fifteenth aspect, wherein the resist pattern is removed by ashing.

本発明の第１７の態様は、
上記第７、第１４、第１５又は第１６の態様に記載の使用方法を含む、液晶表示装置の製造方法である。 The seventeenth aspect of the present invention provides
It is a manufacturing method of a liquid crystal display device including the usage method as described in the said 7th, 14th, 15th or 16th aspect.

本発明の第１８の態様は、
遮光部、透光部、及びそれぞれ異なる光透過率の第１半透光部と第２半透光部を有する４階調フォトマスクであって、被転写体に膜厚が段階的又は連続的に異なるレジストパターンを形成する４階調フォトマスクの製造に用いるフォトマスクブランクであって、
透光性基板上に、第１半透光膜、第２半透光膜及び遮光膜が順次成膜され、
前記第２半透光膜と前記遮光膜は、互いのエッチングに対して耐性を有する膜であり、
前記第１半透光膜と前記遮光膜は、同種のエッチングガス又はエッチング液によりエッチング可能な材料により構成されることにより、フォトリソグラフィ工程において２回の描画により、前記４階調フォトマスクが製造できることを特徴とする、
４階調フォトマスク製造用フォトマスクブランクである。 The eighteenth aspect of the present invention provides
A four-tone photomask having a light-shielding part, a light-transmitting part, and a first semi-transparent part and a second semi-transparent part having different light transmittances, wherein the film thickness is stepwise or continuous on the transfer object A photomask blank used for manufacturing a four-tone photomask for forming different resist patterns in
A first semi-transparent film, a second semi-transparent film, and a light shielding film are sequentially formed on the translucent substrate,
The second semi-transparent film and the light shielding film are films having resistance to mutual etching,
The first semi-transparent film and the light-shielding film are made of a material that can be etched with the same kind of etching gas or etching solution, so that the four-tone photomask is manufactured by drawing twice in a photolithography process. It is characterized by being able to
This is a photomask blank for producing a four-tone photomask.

本発明によれば、透光性基板上に、互いのエッチングに対し耐性を有する材料からなる第１半透光膜と遮光膜とが順次成膜され、この遮光膜上に、好ましくは遮光膜と同様のエッチングが可能な材料からなる第２半透光膜が成膜されることから、互いにエッチング耐性がある膜とない膜との組合せにより、フォトリソグラフィ工程によって描画回数を低減して４階調フォトマスクを製造できる。   According to the present invention, the first semi-transparent film and the light shielding film made of materials having resistance to mutual etching are sequentially formed on the light transmissive substrate, and the light shielding film is preferably formed on the light shielding film. Since the second semi-transparent film made of the same material that can be etched is formed, the number of times of drawing is reduced by the photolithography process by combining the film having etching resistance and the film having no etching resistance. A toned photomask can be manufactured.

また、本発明によれば、透光性基板上に、第１半透光膜、第２半透光膜及び遮光膜が順次成膜され、第１半透光膜と遮光膜とが同様のエッチングが可能であり、これらの第１半透光膜及び遮光膜と第２半透光膜とが互いのエッチングに対して耐性を有する材料からなることから、互いにエッチング耐性がある膜とない膜との組合せにより、フォトリソグラフィ工程によって描画回数を低減して４階調フォトマスクを製造できる。   According to the invention, the first semi-transparent film, the second semi-transparent film, and the light-shielding film are sequentially formed on the translucent substrate, and the first semi-transparent film and the light-shielding film are the same. Since the first semi-transparent film, the light-shielding film, and the second semi-transparent film are made of a material having resistance to mutual etching, a film having no etching resistance and a film having no etching resistance can be used. By combining with, a four-tone photomask can be manufactured by reducing the number of times of writing by a photolithography process.

本発明に係る４階調フォトマスクの製造方法における第１の実施の形態である４階調グレートーンマスクの製造工程を示す工程図である。It is process drawing which shows the manufacturing process of the 4 gradation gray tone mask which is 1st Embodiment in the manufacturing method of the 4 gradation photomask which concerns on this invention. 図１の製造工程により製造された４階調グレートーンマスクを示し、（Ａ）が平面図、（Ｂ）が側断面図である。4A and 4B show a four-tone gray-tone mask manufactured by the manufacturing process of FIG. 1, in which FIG. 本発明に係る４階調フォトマスクの製造方法における第２の実施の形態である４階調グレートーンマスクの製造工程を示す工程図である。It is process drawing which shows the manufacturing process of the 4 gradation gray tone mask which is 2nd Embodiment in the manufacturing method of the 4 gradation photomask which concerns on this invention. 図３の製造工程により製造された４階調グレートーンマスクを示し、（Ａ）が平面図、（Ｂ）が側断面図である。4A and 4B show a four-tone gray-tone mask manufactured by the manufacturing process of FIG. 3, in which FIG. 3A is a plan view and FIG.

以下、本発明を実施するための最良の形態を、図面に基づき説明する。
［Ａ］第１の実施の形態（図１、図２）
図１は、本発明に係る４階調フォトマスクの製造方法における第１の実施の形態である４階調グレートーンマスクの製造工程を示す工程図である。図２は、図１の製造工程により製造された４階調グレートーンマスクを示し、（Ａ）が平面図、（Ｂ）が側断面図である。 The best mode for carrying out the present invention will be described below with reference to the drawings.
[A] First embodiment (FIGS. 1 and 2)
FIG. 1 is a process diagram showing a manufacturing process of a four-tone gray-tone mask according to the first embodiment of the method for manufacturing a four-tone photomask according to the present invention. 2A and 2B show a four-tone gray-tone mask manufactured by the manufacturing process of FIG. 1, wherein FIG. 2A is a plan view and FIG. 2B is a side sectional view.

図２に示すグレートーンマスク１０は、例えば液晶表示装置（ＬＣＤ）の薄膜トランジスタ（ＴＦＴ）やカラーフィルタ、またはプラズマディスプレイパネル（ＰＤＰ）などを製造するために用いられるものであり、被転写体１１上に、膜厚が段階的または連続的に異なるレジストパターン１２を形成するものである。尚、図２（Ｂ）中において符号１９Ａ、１９Ｂ、１９Ｃは、被転写体１１において積層された膜を示す。   A gray tone mask 10 shown in FIG. 2 is used for manufacturing, for example, a thin film transistor (TFT), a color filter, a plasma display panel (PDP), or the like of a liquid crystal display (LCD). In addition, the resist patterns 12 having different film thicknesses are formed stepwise or continuously. In FIG. 2B, reference numerals 19A, 19B, and 19C denote films stacked on the transfer object 11.

上記グレートーンマスク１０は、当該グレートーンマスク１０の使用時に露光光を遮光（光透過率が略０％）させる遮光部１３と、露光光を略１００％透過させる透光部１４と、露光光の透過率を２０〜５０％程度に低減させる第１半透光部１５Ａ及び第２半透光部１５Ｂとを有して構成される。このように、遮光部１３及び透光部１４の他に半透光部を有するフォトマスクがグレートーンマスクと称される。上記第１半透光部１５Ａと第２半透光部１５Ｂとは光透過率が異なり、本実施の形態では、第１半透光部１５Ａの光透過率が第２半透光部１５Ｂの光透過率よりも低く設定されている。従って、上記グレートーンマスク１０は、露光光の透過率が４段階に異なる４階調のグレートーンマスクとなっている。   The gray tone mask 10 includes a light shielding portion 13 that shields exposure light (light transmittance is approximately 0%) when the gray tone mask 10 is used, a light transmitting portion 14 that transmits approximately 100% of the exposure light, and exposure light. The first semi-transmissive portion 15A and the second semi-transmissive portion 15B are configured to reduce the transmittance of the light to about 20 to 50%. In this way, a photomask having a semi-transparent part in addition to the light-shielding part 13 and the translucent part 14 is referred to as a gray tone mask. The first semi-transmissive portion 15A and the second semi-transmissive portion 15B have different light transmittances. In this embodiment, the light transmittance of the first semi-transmissive portion 15A is that of the second semi-transmissive portion 15B. It is set lower than the light transmittance. Therefore, the gray tone mask 10 is a four-tone gray tone mask having different exposure light transmittances in four stages.

上記第１半透光部１５Ａは、ガラス基板等の透光性基板１６の表面に光半透過性の第１半透光膜１７Ａが設けられて構成される。また、第２半透光部１５Ｂは、透光性基板１６の表面に光半透過性の第２半透光膜１７Ｂが設けられて構成される。更に、遮光部１３は、透光性基板１６の表面に、上記第１半透光膜１７Ａ、遮光膜１８及び上記第２半透光膜１７Ｂが順次積層されて構成される。   The first semi-transparent portion 15A is configured by providing a light semi-transmissive first semi-transparent film 17A on the surface of a translucent substrate 16 such as a glass substrate. The second semi-transparent portion 15B is configured by providing a light semi-transmissive second semi-transparent film 17B on the surface of the translucent substrate 16. Further, the light shielding portion 13 is configured by sequentially laminating the first semi-transmissive film 17A, the light-shielding film 18 and the second semi-transmissive film 17B on the surface of the translucent substrate 16.

上記第１半透光膜１７Ａは、金属とシリコンを含む薄膜であり、モリブデンシリサイド（ＭｏＳｉ）を主成分とする膜が好ましく、例えばＭｏＳｉ（ＭｏＳｉ２）、ＭｏＳｉＮ、ＭｏＳｉＯＮ、ＭｏＳｉＣＯＮ等が挙げられる。また、第２半透光膜１７Ｂ及び遮光膜１８は、クロムを主成分とする膜であり、遮光膜１８はクロム、第２半透光膜１７Ｂは窒化クロム、酸化クロム、酸窒化クロム、フッ化クロム等が好ましい。第１半透光部１５Ａの光透過率は、第１半透光膜１７Ａの膜材質と膜厚との選定によって設定される。また、第２半透光部１５Ｂの光透過率は、第２半透光膜１７Ｂの膜材質と膜厚との選定によって設定される。更に、遮光部１３の光透過率は、第１半透光膜１７Ａ、第２半透光膜１７Ｂ及び遮光膜１８の膜材質と膜厚との選定によって設定される。   The first semi-transparent film 17A is a thin film containing metal and silicon and is preferably a film mainly composed of molybdenum silicide (MoSi). Examples thereof include MoSi (MoSi 2), MoSiN, MoSiON, and MoSiCON. The second semi-transparent film 17B and the light shielding film 18 are films mainly composed of chromium. The light shielding film 18 is chromium, and the second semi-transparent film 17B is chromium nitride, chromium oxide, chromium oxynitride, fluorine. Chromium oxide is preferred. The light transmittance of the first semi-transparent portion 15A is set by selecting the film material and film thickness of the first semi-transparent film 17A. Further, the light transmittance of the second semi-transparent portion 15B is set by selecting the film material and film thickness of the second semi-transparent film 17B. Further, the light transmittance of the light shielding portion 13 is set by selecting the film materials and film thicknesses of the first semi-transmissive film 17A, the second semi-transmissive film 17B, and the light-shielding film 18.

上述のような４階調のグレートーンマスク１０を使用したとき、遮光部１３では露光光が透過せず、第２半透光部１５Ｂでは露光光が低減され、第１半透光部１５Ａでは、第２半透光部１５Ｂよりも露光光が更に低減されるため、被転写体１１上に付着したレジスト膜（ポジ型フォトレジスト膜）は、遮光部１３に対応する部分で膜厚が最も高くなり、第１半透光部１５Ａに対応する部分で膜厚が次に厚くなり、第２半透光部１５Ｂに対応する部分で膜厚が薄くなり、透光部１４に対応する部分で膜がないレジストパターン１２を形成する。なお、レジスト膜をネガ型フォトレジスト膜とした場合には、各部に対応するレジスト膜の膜厚は上記の逆になる。   When the four-tone gray-tone mask 10 as described above is used, the exposure light is not transmitted through the light shielding portion 13, the exposure light is reduced at the second semi-transparent portion 15B, and the first semi-transparent portion 15A. Since the exposure light is further reduced as compared with the second semi-transparent portion 15B, the resist film (positive photoresist film) adhering to the transferred body 11 has the largest thickness at the portion corresponding to the light shielding portion 13. The film thickness becomes higher next in the portion corresponding to the first semi-transparent portion 15A, the film thickness becomes thinner in the portion corresponding to the second semi-transparent portion 15B, and in the portion corresponding to the translucent portion 14. A resist pattern 12 having no film is formed. If the resist film is a negative photoresist film, the resist film thickness corresponding to each part is the reverse of the above.

そして、レジストパターン１２の膜のない部分（透光部１４に対応する部分）で、被転写体１１における例えば膜１９Ａ、１９Ｂ及び１９Ｃに第１エッチングを実施する。続いて、レジストパターン１２の膜のうち最も膜厚が薄い部分（第２半透光部１５Ｂに対応する部分）をアッシング等によって除去し、この部分（第２半透光部１５Ｂに対応する部分）で、被転写体１１における例えば膜１９Ｂ及び１９Ｃに第２エッチングを実施する。続いて、レジストパターン１２の膜のうち次に膜厚が薄い部分（第１半透光部１５Ａに対応する部分）をアッシング等によって除去し、この部分（第１半透光部１５Ａに対応する部分）で、被転写体１１における例えば膜１９Ｃに第３エッチングを実施する。このようにして、１枚のグレートーンマスク１０を用いて、従来のフォトマスク３枚分の工程が実施されることになり、マスク枚数が削減される。   Then, first etching is performed on, for example, the films 19 </ b> A, 19 </ b> B, and 19 </ b> C in the transferred object 11 at a portion of the resist pattern 12 where there is no film (a portion corresponding to the light transmitting portion 14). Subsequently, the thinnest portion (the portion corresponding to the second semi-transparent portion 15B) of the film of the resist pattern 12 is removed by ashing or the like, and this portion (the portion corresponding to the second semi-transparent portion 15B). Then, the second etching is performed on, for example, the films 19B and 19C in the transferred object 11. Subsequently, the next thinnest part (the part corresponding to the first semi-transparent part 15A) of the film of the resist pattern 12 is removed by ashing or the like, and this part (corresponding to the first semi-transparent part 15A). For example, the third etching is performed on the film 19 </ b> C of the transfer target 11. In this manner, the process for three conventional photomasks is performed using one graytone mask 10, and the number of masks is reduced.

ところで、上述のような４階調グレートーンマスク１０を製造する製造工程を、図１を用いて以下に述べる。   A manufacturing process for manufacturing the above-described four-tone gray-tone mask 10 will be described below with reference to FIG.

まず、透光性基板１６の表面に、第１半透光膜１７Ａ、遮光膜１８を順次成膜する工程を実施してフォトマスクブランク２０を形成し、準備する（図１（Ａ））。この第１半透光膜１７Ａと遮光膜１８は、グレートーンマスク１０の製造工程において、互いのエッチングに対し耐性を有する膜になっている。たとえば、第１半透光膜１７Ａは、クロム用エッチングガスまたは液に対して耐性を有し、遮光膜１８は、ＭｏＳｉ用エッチングガスまたは液に対して耐性を有する素材（材料）を選択することが出来る。   First, a photomask blank 20 is formed by preparing a first semi-transparent film 17A and a light-shielding film 18 on the surface of the translucent substrate 16 to prepare (FIG. 1A). The first semi-transmissive film 17A and the light shielding film 18 are films having resistance to mutual etching in the manufacturing process of the gray tone mask 10. For example, the first semi-transparent film 17A is resistant to a chromium etching gas or liquid, and the light shielding film 18 is a material (material) that is resistant to an MoSi etching gas or liquid. I can do it.

次に、上記フォトマスクブランク２０の遮光膜１８上にレジスト膜（ポジ型フォトレジスト膜）を成膜する。続いて、このレジスト膜を電子線またはレーザーを用いた描画装置によって露光して描画し、現像して、第１レジストパターン２１を形成する（図１（Ｂ））。この第１レジストパターン２１は、製造されるグレートーンマスク１０の透光部１４及び第２半透光部１５Ｂを開口領域とする形状に形成される。   Next, a resist film (positive photoresist film) is formed on the light shielding film 18 of the photomask blank 20. Subsequently, the resist film is exposed and drawn by a drawing apparatus using an electron beam or a laser, and developed to form a first resist pattern 21 (FIG. 1B). The first resist pattern 21 is formed in a shape having the light-transmitting portion 14 and the second semi-light-transmitting portion 15B of the manufactured gray-tone mask 10 as opening regions.

次に、この第１レジストパターン２１が形成されたフォトマスクブランク２０の遮光膜１８を、クロム用エッチングガスまたは液を用い、第１レジストパターン２１をマスクにしてドライエッチングまたはウェットエッチングする（図１（Ｃ））。このエッチングにより、遮光膜１８に遮光膜パターン２２が形成される。また、第１半透光膜１７Ａは、クロム用エッチングガスまたは液に対して耐性を有することから、この遮光膜１８のエッチング時にはエッチングされにくい。   Next, the light-shielding film 18 of the photomask blank 20 on which the first resist pattern 21 is formed is dry-etched or wet-etched using a chromium etching gas or liquid with the first resist pattern 21 as a mask (FIG. 1). (C)). By this etching, a light shielding film pattern 22 is formed on the light shielding film 18. Further, since the first semi-transparent film 17A is resistant to the etching gas or liquid for chromium, it is difficult to etch when the light shielding film 18 is etched.

遮光膜パターン２２の形成後、第１レジストパターン２１を剥離し（図１（Ｄ））、その後、遮光膜パターン２２をマスクにし、第１半透光膜１７Ａをドライまたはウェットエッチングして第１半透光膜パターン２３を形成する（図１（Ｅ））。または、上記遮光膜パターン２２の形成後、第１レジストパターン２１及び遮光膜パターン２２をマスクにし、第１半透光膜１７Ａをドライまたはウェットエッチングして第１半透光膜パターン２３を形成し、その後に上記第１レジストパターン２１を剥離してもよい。これらのウェットまたはドライエッチングにおいて、遮光膜１８は、ＭｏＳｉ用エッチングガスまたは液に対して耐性を有するため、この第１半透光膜１７Ａのエッチング時にエッチングされることがない。また、上記ＭｏＳｉ用エッチング液としては、例えば弗化水素酸、珪弗化水素酸、弗化水素アンモニウムから選ばれる少なくとも一つの弗素化合物と、過酸化水素、硝酸、硫酸から選ばれる少なくとも一つの酸化剤を含むものが使用される。   After the formation of the light shielding film pattern 22, the first resist pattern 21 is peeled off (FIG. 1D), and then the first semi-transparent film 17A is dry or wet etched using the light shielding film pattern 22 as a mask. A semi-transparent film pattern 23 is formed (FIG. 1E). Alternatively, after the light shielding film pattern 22 is formed, the first semi-transparent film pattern 23 is formed by dry or wet etching the first semi-transparent film 17A using the first resist pattern 21 and the light shielding film pattern 22 as a mask. Thereafter, the first resist pattern 21 may be peeled off. In these wet or dry etching, since the light shielding film 18 is resistant to the etching gas or liquid for MoSi, it is not etched during the etching of the first semi-transparent film 17A. The MoSi etching solution includes, for example, at least one fluorine compound selected from hydrofluoric acid, silicohydrofluoric acid, and ammonium hydrogen fluoride, and at least one oxidation selected from hydrogen peroxide, nitric acid, and sulfuric acid. The one containing the agent is used.

上述のようにして第１半透光膜パターン２３を形成後、遮光膜１８上及び露出した透光性基板１６上に第２半透光膜１７Ｂを成膜して、他のフォトマスクブランク２４、すなわち、透光性基板１６と、この透光性基板１６上に第１半透光膜１７Ａと遮光膜１８とが積層されたパターンと、露出した透光性基板１６上及び当該パターン上に成膜された第２半透光膜１７Ｂと、を有するフォトブランクマスク２４を形成する（図１（Ｆ））。なお、第２半透光膜１７Ｂと遮光膜１８とは、グレートーンマスク１０の製造工程において、互いのエッチングに対して耐性が小さい膜である。すなわち、第２半透光膜１７Ｂと遮光膜１８とは、同種のエッチングガスまたは液によってエッチングが可能な素材（材料）により構成される。   After forming the first semi-transparent film pattern 23 as described above, a second semi-transparent film 17B is formed on the light shielding film 18 and the exposed translucent substrate 16, and another photomask blank 24 is formed. That is, the translucent substrate 16, the pattern in which the first semi-transparent film 17A and the light-shielding film 18 are laminated on the translucent substrate 16, the exposed translucent substrate 16 and the pattern. A photo blank mask 24 having the formed second semi-transmissive film 17B is formed (FIG. 1F). Note that the second semi-transparent film 17B and the light shielding film 18 are films having low resistance to mutual etching in the manufacturing process of the gray tone mask 10. That is, the second semi-transparent film 17B and the light shielding film 18 are made of a material (material) that can be etched with the same kind of etching gas or liquid.

次に、上記フォトマスクブランク２４の第２半透光膜１７Ｂ上にレジスト膜を成膜する。続いて、このレジスト膜を前述と同様に露光して描画し、現像して、第２レジストパターン２５を形成する（図１（Ｇ））。この第２レジストパターン２５は、透光部１４及び第１半透光部１５Ａを開口領域とする形状に形成される。   Next, a resist film is formed on the second semi-transparent film 17B of the photomask blank 24. Subsequently, the resist film is exposed, drawn and developed in the same manner as described above to form a second resist pattern 25 (FIG. 1G). The second resist pattern 25 is formed in a shape having the light transmitting portion 14 and the first semi-light transmitting portion 15A as an opening region.

次に、第２レジストパターン２５をマスクにして、前記クロム用エッチングガスまたは液を用い遮光膜１８及び第２半透光膜１７Ｂをドライまたはウェットエッチングする（図１（Ｈ））。その後、残存する第２レジストパターン２５を除去（剥離）して、第１半透光膜１７Ａからなる第１半透光部１５Ａ、第２半透光膜１７Ｂからなる第２半透光部１５Ｂ、第１半透光膜１７Ａ、第２半透光膜１７Ｂ及び遮光膜１８が積層されてなる遮光部１３を有する４階調のグレートーンマスク１０を製造する（図１（Ｉ））。   Next, using the second resist pattern 25 as a mask, the light shielding film 18 and the second semi-transparent film 17B are dry or wet etched using the chromium etching gas or liquid (FIG. 1H). Thereafter, the remaining second resist pattern 25 is removed (peeled), and the first semi-transmissive portion 15A made of the first semi-transmissive film 17A and the second semi-transmissive portion 15B made of the second semi-transmissive film 17B. Then, the four-tone gray-tone mask 10 having the light-shielding portion 13 formed by laminating the first semi-transparent film 17A, the second semi-transparent film 17B, and the light-shielding film 18 is manufactured (FIG. 1I).

以上のように構成されたことから、上記実施の形態によれば、次の効果を奏する。グレートーンマスク１０の製造工程によれば、透光性基板１６と、この透光性基板１６上に第１半透光膜１７Ａと遮光膜１８とが積層されたパターンと、この透光性基板１６の露出面及び当該パターン上に成膜された第２半透光膜１７Ｂと、を有するフォトブランクマスク２４が形成される。そして、第１半透光膜１７Ａと遮光膜１８とは互いのエッチングに対し耐性を有する膜であり、また、遮光膜１８と第２半透光膜１７Ｂとは同様のエッチング剤によってエッチングが可能な膜である。このように、互いにエッチング耐性が大きい膜と相対的に小さい膜との組合せにより、フォトリソグラフィ工程による描画回数を２回に低減して、４階調のフォトマスク１０を製造できる。   With the configuration as described above, according to the above embodiment, the following effects are obtained. According to the manufacturing process of the gray tone mask 10, the translucent substrate 16, the pattern in which the first semi-transparent film 17A and the light shielding film 18 are laminated on the translucent substrate 16, and the translucent substrate. A photo blank mask 24 having 16 exposed surfaces and a second semi-transparent film 17B formed on the pattern is formed. The first semi-transparent film 17A and the light-shielding film 18 are films resistant to mutual etching, and the light-shielding film 18 and the second semi-transparent film 17B can be etched with the same etching agent. It is a simple film. As described above, the combination of the film having a high etching resistance and the film having a relatively small etching resistance reduces the number of times of drawing in the photolithography process to two, thereby manufacturing the four-tone photomask 10.

［Ｂ］第２の実施の形態（図３、図４）
図３は、本発明に係る４階調フォトマスクの製造方法における第２の実施の形態である４階調グレートーンマスクの製造工程を示す工程図である。図４は、図３の製造工程により製造された４階調グレートーンマスクを示し、（Ａ）が平面図、（Ｂ）が側断面図である。この第２の実施の形態において、前記第１の実施の形態と同様な部分は、同一の符号を付すことにより説明を省略する。 [B] Second embodiment (FIGS. 3 and 4)
FIG. 3 is a process diagram showing a manufacturing process of a 4-tone gray-tone mask which is the second embodiment in the method of manufacturing a 4-tone photomask according to the present invention. 4A and 4B show a four-tone gray-tone mask manufactured by the manufacturing process of FIG. 3, in which FIG. 4A is a plan view and FIG. 4B is a side sectional view. In the second embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

図４に示すグレートーンマスク３０も、例えば液晶表示装置（ＬＣＤ）の薄膜トランジスタ（ＴＦＴ）やカラーフィルタ、またはプラズマディスプレイパネル（ＰＤＰ）などを製造するために用いられるものであり、被転写体３１上に、膜厚が段階的または連続的に異なるレジストパターン３２を形成するものである。   The gray tone mask 30 shown in FIG. 4 is also used for manufacturing, for example, a thin film transistor (TFT), a color filter, or a plasma display panel (PDP) of a liquid crystal display device (LCD). In addition, resist patterns 32 having different film thicknesses stepwise or continuously are formed.

上記グレートーンマスク３０は、当該グレートーンマスク３０の使用時に露光光を遮光（光透過率が略０％）させる遮光部３３と、露光光を略１００％透過させる透光部３４と、露光光の透過率を２０〜５０％程度に低減させる第１半透光部３５Ａ及び第２半透光部３５Ｂとを有して構成される。上記第１半透光部３５Ａと第２半透光部３５Ｂとは光透過率が異なり、本実施の形態では、第１半透光部３５Ａの光透過率が第２半透光部３５Ｂの光透過率よりも高く設定されている。従って、上記グレートーンマスク３０も、前記グレートーンマスク１０と同様に、露光光の透過率が４段階に異なる４階調のグレートーンマスクとなっている。   The gray-tone mask 30 includes a light-blocking portion 33 that blocks exposure light (light transmittance is approximately 0%) when the gray-tone mask 30 is used, a light-transmitting portion 34 that transmits approximately 100% of the exposure light, and exposure light. The first semi-transmissive portion 35A and the second semi-transmissive portion 35B are configured to reduce the transmittance of the light to about 20 to 50%. The first semi-transmissive part 35A and the second semi-transmissive part 35B have different light transmittances. In the present embodiment, the light transmittance of the first semi-transmissive part 35A is the same as that of the second semi-transmissive part 35B. It is set higher than the light transmittance. Accordingly, the gray tone mask 30 is also a four-tone gray tone mask having different exposure light transmittances in four stages, like the gray tone mask 10.

上記第１半透光部３５Ａは、ガラス基板等の透光性基板１６の表面に光半透過性の第１半透光膜３７Ａが設けられて構成される。また、第２半透光部３５Ｂは、透光性基板１６の表面に、上記第１半透光膜３７Ａと光半透過性の第２半透光膜３７Ｂとが積層されて構成される。更に、遮光部３３は、透光性基板１６の表面に、上記第１半透光膜３７Ａ、第２半透光膜３７Ｂ及び遮光膜３８が順次積層されて構成される。   The first semi-transparent portion 35A is configured by providing a light semi-transmissive first semi-transparent film 37A on the surface of a translucent substrate 16 such as a glass substrate. The second semi-transmissive portion 35B is configured by laminating the first semi-transmissive film 37A and the light semi-transmissive second semi-transmissive film 37B on the surface of the translucent substrate 16. Further, the light shielding portion 33 is configured by sequentially stacking the first semi-transmissive film 37A, the second semi-transmissive film 37B, and the light shielding film 38 on the surface of the translucent substrate 16.

上記第２半透光膜３７Ｂは、金属とシリコンを含む薄膜であり、モリブデンシリサイド（ＭｏＳｉ）を主成分とする膜が好ましく、例えばＭｏＳｉ（ＭｏＳｉ２）、ＭｏＳｉＮ、ＭｏＳｉＯＮ、ＭｏＳｉＣＯＮ等が挙げられる。また、第１半透光膜３７Ａ及び遮光膜３８は、クロムを主成分とする膜であり、遮光膜３８はクロム、第１半透光膜３７Ａは窒化クロム、酸化クロム、酸窒化クロム、フッ化クロム等が好ましい。第１半透光部３５Ａの光透過率は、第１半透光膜３７Ａの膜材質と膜厚との選定によって設定される。また、第２半透光部３５Ｂの光透過率は、第１半透光膜３７Ａ及び第２半透光膜３７Ｂのそれぞれの膜材質と膜厚との選定によって設定される。   The second semi-transparent film 37B is a thin film containing metal and silicon and is preferably a film mainly composed of molybdenum silicide (MoSi). Examples thereof include MoSi (MoSi2), MoSiN, MoSiON, and MoSiCON. The first semi-transparent film 37A and the light-shielding film 38 are films mainly composed of chromium, the light-shielding film 38 is chromium, and the first semi-transparent film 37A is chromium nitride, chromium oxide, chromium oxynitride, fluorine. Chromium oxide is preferred. The light transmittance of the first semi-transparent portion 35A is set by selecting the film material and thickness of the first semi-transparent film 37A. The light transmittance of the second semi-transmissive part 35B is set by selecting the film material and the film thickness of the first semi-transmissive film 37A and the second semi-transmissive film 37B.

上述のような４階調のグレートーンマスク３０を使用したとき、遮光部３３では露光光が透過せず、第１半透光部３５Ａでは露光光が低減され、第２半透光部３５Ｂでは、第１半透光部３５Ａよりも露光光が更に低減されるため、被転写体３１上に付着したレジスト膜（ポジ型フォトレジスト膜）は、遮光部３３に対応する部分で膜厚が最も高くなり、第２半透光部３５Ｂに対応する部分で膜厚が次に厚くなり、第１半透光部３５Ａに対応する部分で膜厚が薄くなり、透光部３４に対応する部分で膜がないレジストパターン３２を形成する。なお、レジスト膜をネガ型フォトレジスト膜とした場合には、各部に対応するレジスト膜の膜厚は上記の逆になる。   When the four-tone gray-tone mask 30 as described above is used, the exposure light is not transmitted through the light shielding portion 33, the exposure light is reduced at the first semi-transmissive portion 35A, and the second semi-transmissive portion 35B. Since the exposure light is further reduced as compared with the first semi-translucent portion 35A, the resist film (positive type photoresist film) adhering to the transfer target 31 has the largest thickness at the portion corresponding to the light shielding portion 33. The film thickness becomes higher next at the portion corresponding to the second semi-transparent portion 35B, the film thickness becomes thinner at the portion corresponding to the first semi-transparent portion 35A, and at the portion corresponding to the translucent portion 34. A resist pattern 32 having no film is formed. If the resist film is a negative photoresist film, the resist film thickness corresponding to each part is the reverse of the above.

そして、レジストパターン３２の膜のない部分（透光部３４に対応する部分）で、被転写体３１における例えば膜１９Ａ、１９Ｂ及び１９Ｃに第１エッチングを実施する。続いて、レジストパターン３２の膜のうち最も膜厚が薄い部分（第１半透光部３５Ａに対応する部分）をアッシング等によって除去し、この部分（第１半透光部３５Ａに対応する部分）で、被転写体３１における例えば膜１９Ｂ及び１９Ｃに第２エッチングを実施する。続いて、レジストパターン３２の膜のうち次に膜厚が薄いが薄い部分（第２半透光部３５Ｂに対応する部分）をアッシング等によって除去し、この部分（第２半透光部３５Ｂに対応する部分）で、被転写体３１における例えば膜１９Ｃに第３エッチングを実施する。このようにして、１枚のグレートーンマスク３０を用いて、従来のフォトマスク３枚分の工程が実施されることになり、マスク枚数が削減される。   Then, first etching is performed on, for example, the films 19 </ b> A, 19 </ b> B, and 19 </ b> C in the transfer target 31 at a portion of the resist pattern 32 where there is no film (a portion corresponding to the light transmitting portion 34). Subsequently, the thinnest portion (portion corresponding to the first semi-translucent portion 35A) of the film of the resist pattern 32 is removed by ashing or the like, and this portion (portion corresponding to the first semi-transparent portion 35A). ), The second etching is performed on, for example, the films 19B and 19C in the transfer target 31. Subsequently, the thinnest part (the part corresponding to the second semi-transparent part 35B) of the film of the resist pattern 32 is removed by ashing or the like, and this part (the second semi-transparent part 35B) is removed. In the corresponding portion), for example, the third etching is performed on the film 19C in the transfer target 31. In this way, the process for three conventional photomasks is performed using one graytone mask 30, and the number of masks is reduced.

ところで、上述のような４階調グレートーンマスク３０を製造する製造工程を、図３を用いて以下に述べる。   A manufacturing process for manufacturing the above-described four-tone gray-tone mask 30 will be described below with reference to FIG.

まず、透光性基板１６の表面に、第１半透光膜３７Ａ、第２半透光膜３７Ｂ及び遮光膜３８を順次成膜する工程を実施してフォトマスクブランク４０を形成し、準備する（図３（Ａ））。ここで、第２半透光膜３７Ｂと遮光膜３８とは、グレートーンマスク３０の製造工程において、互いのエッチングに対し耐性を有する膜になっている。たとえば、第２半透光膜３７Ｂは、クロム用エッチングガスまたは液に対して耐性を有し、遮光膜３８は、ＭｏＳｉ用エッチングカスまたは液に対して耐性を有する素材（材料）を選択することが出来る。また、第１半透光膜３７Ａは、遮光膜３８と同様なエッチングが可能な材料からなり、従って、第１半透光膜３７Ａと遮光膜３８は、互いのエッチングに対し耐性の小さい膜である。すなわち、第１半透光膜３７Ａと遮光膜３８とは、同種のエッチングガスまたは液によってエッチングが可能な素材（材料）により構成される。   First, a step of sequentially forming a first semi-transparent film 37A, a second semi-transparent film 37B, and a light shielding film 38 on the surface of the translucent substrate 16 is performed to form and prepare a photomask blank 40. (FIG. 3 (A)). Here, the second semi-transparent film 37 </ b> B and the light shielding film 38 are films having resistance to mutual etching in the manufacturing process of the gray tone mask 30. For example, the second semi-transparent film 37B is resistant to a chromium etching gas or liquid, and the light shielding film 38 is a material (material) that is resistant to MoSi etching residue or liquid. I can do it. The first semi-transparent film 37A is made of a material that can be etched in the same manner as the light-shielding film 38. Therefore, the first semi-transparent film 37A and the light-shielding film 38 are films having low resistance to mutual etching. is there. That is, the first semi-transmissive film 37A and the light shielding film 38 are made of a material that can be etched with the same kind of etching gas or liquid.

次に、上記フォトマスクブランク４０の遮光膜３８上にレジスト膜（ポジ型フォトレジスト膜）を成膜する。続いて、このレジスト膜を電子線またはレーザーを用いた描画装置によって露光して描画し、現像して、第１レジストパターン４１を形成する（図３（Ｂ））。この第１レジストパターン４１は、製造されるグレートーンマスク３０の透光部３４及び第１半透光部３５Ａを開口領域とする形状に形成される。   Next, a resist film (positive photoresist film) is formed on the light shielding film 38 of the photomask blank 40. Subsequently, the resist film is exposed and drawn by a drawing apparatus using an electron beam or a laser, and developed to form a first resist pattern 41 (FIG. 3B). The first resist pattern 41 is formed in a shape having the light-transmitting portion 34 and the first semi-light-transmitting portion 35A of the manufactured gray-tone mask 30 as opening regions.

次に、この第１レジストパターン４１が形成されたフォトマスクブランク４０の遮光膜３８を、クロム用エッチングガスまたは液を用い、第１レジストパターン４１をマスクにしてドライエッチングまたはウェットエッチングする（図３（Ｃ））。このエッチングにより、遮光膜３８に遮光膜パターン４２が形成される。また、第２半透光膜３７Ｂは、クロム用エッチングガスまたは液に対して耐性を有することから、この遮光膜３８のエッチング時にはエッチングされにくい。   Next, the light-shielding film 38 of the photomask blank 40 on which the first resist pattern 41 is formed is dry-etched or wet-etched using a chromium etching gas or liquid with the first resist pattern 41 as a mask (FIG. 3). (C)). By this etching, a light shielding film pattern 42 is formed on the light shielding film 38. Further, since the second semi-transparent film 37B is resistant to the etching gas or liquid for chromium, it is difficult to etch when the light shielding film 38 is etched.

遮光膜パターン４２の形成後、第１レジストパターン４１を剥離し、その後、遮光膜パターン４２をマスクにし、第２半透光膜３７Ｂをドライまたはウェットエッチングして第２半透光膜パターン４３を形成する（図３（Ｄ））。または、上記遮光膜パターン４２の形成後、第１レジストパターン４１及び遮光膜パターン４２をマスクにし第２半透光膜３７Ｂをドライまたはウェットエッチングして第２半透光膜パターン４３を形成し、その後に上記第１レジストパターン４１を剥離してもよい。これらのウェットまたはドライエッチングにおいて、遮光膜３８及び第１半透光膜３７Ａは、ＭｏＳｉ用エッチングガスまたは液に対して耐性を有するため、この第２半透光膜３７Ｂのエッチング時にはエッチングされにくい。   After the formation of the light shielding film pattern 42, the first resist pattern 41 is peeled off, and then, using the light shielding film pattern 42 as a mask, the second semi-transmissive film 37B is dry or wet etched to form the second semi-transmissive film pattern 43. It is formed (FIG. 3D). Alternatively, after the formation of the light shielding film pattern 42, the second semitransparent film 37B is dry or wet etched using the first resist pattern 41 and the light shielding film pattern 42 as a mask to form the second semitransparent film pattern 43, Thereafter, the first resist pattern 41 may be peeled off. In these wet or dry etching, the light-shielding film 38 and the first semi-transparent film 37A are resistant to the etching gas or liquid for MoSi, so that they are not easily etched when the second semi-transparent film 37B is etched.

上述のようにして第２半透光膜パターン４３を形成後、遮光膜３８上及び露出した第１半透光膜３７Ａ上にレジスト膜を成膜する。続いて、このレジスト膜を前述と同様に露光して描画し、現像して、第２レジストパターン４４を形成する（図３（Ｅ））。この第２レジストパターン４４は、透光部３４及び第２半透光部３５Ｂを開口領域とする形状に形成される。   After forming the second semi-transparent film pattern 43 as described above, a resist film is formed on the light shielding film 38 and the exposed first semi-transparent film 37A. Subsequently, the resist film is exposed, drawn and developed in the same manner as described above to form a second resist pattern 44 (FIG. 3E). The second resist pattern 44 is formed in a shape having the translucent portion 34 and the second semi-transparent portion 35B as opening regions.

次に、第２レジストパターン４４をマスクにして、前記クロム用エッチングガスまたは液を用い、遮光膜３８及び第１半透光膜３７Ａをドライまたはウェットエッチングする（図３（Ｆ））。その後、残存する第２レジストパターン４４を除去（剥離）して、第１半透光膜３７Ａからなる第１半透光部３５Ａ、第１半透光膜３７Ａ及び第２半透光膜３７Ｂが積層されてなる第２半透光部３５Ｂ、第１半透光膜３７Ａ、第２半透光膜３７Ｂ及び遮光膜３８が積層されてなる遮光部３３を有する４階調のグレートーンマスク３０を製造する（図３（Ｇ））。   Next, using the second resist pattern 44 as a mask, the light shielding film 38 and the first semi-transparent film 37A are dry or wet etched using the chromium etching gas or liquid (FIG. 3F). Thereafter, the remaining second resist pattern 44 is removed (peeled), and the first semi-transmissive portion 35A, the first semi-transmissive film 37A, and the second semi-transmissive film 37B made of the first semi-transmissive film 37A are formed. A four-tone gray-tone mask 30 having a light-shielding portion 33 in which a second semi-transparent portion 35B, a first semi-transparent film 37A, a second semi-transparent film 37B, and a light-shielding film 38 are laminated. Manufacture (FIG. 3G).

以上のように構成されたことから、上記実施の形態によれば、次の効果を奏する。グレートーンマスク３０の製造工程によれば、透光性基板１６と、透光性基板１６上に順次積層された第１半透光膜３７Ａ、第２半透光膜３７Ｂ及び遮光膜３８と、を有するフォトブランクマスク４０が形成される。ここで、第２半透光膜３７Ｂと遮光膜３８とは互いのエッチングに対し耐性を有する膜であり、また、第１半透光膜３７Ａと遮光膜３８とは同様のエッチング剤によってエッチングが可能な膜である。このように、互いにエッチング耐性が大きい膜と相対的に小さい膜との組合せにより、フォトリソグラフィ工程による描画回数を２回に低減して、４階調のフォトマスク１０を製造できる。   With the configuration as described above, according to the above embodiment, the following effects are obtained. According to the manufacturing process of the gray tone mask 30, the translucent substrate 16, the first semi-transparent film 37A, the second semi-transparent film 37B, and the light shielding film 38 sequentially stacked on the translucent substrate 16, A photo blank mask 40 having the above is formed. Here, the second semi-transparent film 37B and the light-shielding film 38 are films that are resistant to mutual etching, and the first semi-transparent film 37A and the light-shielding film 38 are etched by the same etching agent. It is a possible membrane. As described above, the combination of the film having a high etching resistance and the film having a relatively small etching resistance reduces the number of times of drawing in the photolithography process to two, thereby manufacturing the four-tone photomask 10.

以上、本発明を上記実施の形態に基づいて説明したが、本発明はこれに限定されるものではない。   As mentioned above, although this invention was demonstrated based on the said embodiment, this invention is not limited to this.

１０ グレートーンマスク（フォトマスク）
１３ 遮光部
１４ 透光部
１５Ａ 第１半透光部
１５Ｂ 第２半透光部
１６ 透光性基板
１７Ａ 第１半透光膜
１７Ｂ 第２半透光膜
１８ 遮光膜
２０ フォトマスクブランク
２１ 第１レジストパターン
２４ フォトマスクブランク
２５ 第２レジストパターン
３０ グレートーンマスク（フォトマスク）
３３ 遮光部
３４ 透光部
３５Ａ 第１半透光部
３５Ｂ 第２半透光部
３７Ａ 第１半透光膜
３７Ｂ 第２半透光膜
３８ 遮光膜
４０ フォトマスクブランク
４１ 第１レジストパターン
４４ 第２レジストパターン 10 Gray tone mask (photomask)
13 light-shielding part 14 light-transmitting part 15A first semi-light-transmitting part 15B second semi-light-transmitting part 16 light-transmitting substrate 17A first semi-light-transmitting film 17B second semi-light-transmitting film 18 light-shielding film 20 photomask blank 21 first Resist pattern 24 Photomask blank 25 Second resist pattern 30 Gray tone mask (photomask)
33 light-shielding part 34 light-transmitting part 35A first semi-light-transmitting part 35B second semi-light-transmitting part 37A first semi-light-transmitting film 37B second semi-light-transmitting film 38 light-shielding film 40 photomask blank 41 first resist pattern 44 second Resist pattern

Claims (11)

遮光部、透光部、及びそれぞれ異なる光透過率の第１半透光部と第２半透光部を有し、被転写体上に膜厚が段階的又は連続的に異なるレジストパターンを形成する４階調フォトマスクであって、
前記第１半透光部は、透光性基板の表面に、光半透過性の第１半透光膜が設けられて構成され、
前記第２半透光部は、前記透光性基板の表面に、光半透過性の第２半透光膜が設けられて構成され、
前記第２半透光部と第１半透光部とは露光光の光透過率が異なり、
前記遮光部は、前記透光性基板の表面に、前記第１半透光膜、遮光膜、及び前記第２半透光膜が積層されて構成され、かつ、
前記第１半透光膜と前記遮光膜は、互いのエッチングに対して耐性を有する膜であり、
前記第２半透光膜と前記遮光膜は、同種のエッチングガス又はエッチング液によって、エッチングが可能な材料からなるものであることを特徴とする、４階調フォトマスク。 A light-shielding portion, a light-transmitting portion, and a first semi-transparent portion and a second semi-transparent portion having different light transmittances, and a resist pattern having different thicknesses is formed stepwise or continuously on the transfer target. A four-tone photomask,
The first semi-transparent portion is configured by providing a light semi-transmissive first semi-transparent film on the surface of the translucent substrate,
The second semi-transparent portion is configured by providing a light semi-transmissive second semi-transparent film on the surface of the translucent substrate,
The second semi-transmission part and the first semi-transmission part have different light transmittances of exposure light,
The light shielding portion is configured by laminating the first semi-transmissive film, the light shielding film, and the second semi-transmissive film on the surface of the translucent substrate , and
The first semi-transmissive film and the light-shielding film are films having resistance to mutual etching,
Said second HanToruHikarimaku and the light-shielding film, the etching gas or etchant of the same type, characterized by der Rukoto made of etched material capable, 4 tone photomasks. 被転写体上に、前記遮光部に対応する部分の膜厚が最も厚く、前記第１半透光部に対応する部分で膜厚が次に厚く、前記第２半透光部に対応する部分で膜厚が薄く、前記透光部に対応する部分で膜がないレジストパターンを形成するものであることを特徴とする、請求項１に記載の４階調フォトマスク。   The portion corresponding to the light-shielding portion on the transfer body is the thickest, the portion corresponding to the first semi-transparent portion is the next thickest, and the portion corresponding to the second semi-transparent portion The four-tone photomask according to claim 1, wherein a resist pattern having a thin film thickness and having no film at a portion corresponding to the light transmitting portion is formed. 前記第１半透光部と第２半透光部の、露光光の光透過率が２０〜５０％であることを特徴とする、請求項１又は２に記載の４階調フォトマスク。   3. The four-tone photomask according to claim 1, wherein a light transmittance of exposure light between the first semi-transmissive part and the second semi-transmissive part is 20 to 50%. 4. 前記第１半透光膜は、モリブデンシリサイドを含み、前記第２半透光膜及び前記遮光膜はクロムを主成分とすることを特徴とする、請求項１〜３のいずれかに記載の４階調フォトマスク。 The first HanToruHikarimaku comprises molybdenum silicide, the second HanToruHikarimaku and the light blocking layer is characterized by mainly composed of chromium, 4 according to any one of claims 1 to 3 Tone photomask. 請求項１に記載の４階調フォトマスクを用いて露光し、被転写体上にレジストパターンを形成し、
前記透光部に対応する部分で、前記被転写体に第１エッチングを施し、
前記レジストパターンのうち前記第２半透光部に対応する部分を除去し、前記被転写体に第２エッチングを施し、
更に、前記レジストパターンのうち前記第１半透光部に対応する部分を除去し、前記被転写体に第３エッチングを施すことを含む、４階調フォトマスクの使用方法。 It exposes using the 4 gradation photomask of Claim 1, forms a resist pattern on a to-be-transferred body,
First transfer is performed on the transfer object at a portion corresponding to the translucent portion,
Removing a portion of the resist pattern corresponding to the second semi-translucent portion, and performing a second etching on the transfer object;
Further, a method for using a four-tone photomask, comprising: removing a portion of the resist pattern corresponding to the first semi-translucent portion and performing a third etching on the transfer target. 遮光部、透光部、及びそれぞれ異なる光透過率の第１半透光部と第２半透光部を有し、被転写体上に膜厚が段階的又は連続的に異なるレジストパターンを形成する４階調フォトマスクであって、
前記第１半透光部は、透光性基板の表面に、光半透過性の第１半透光膜が設けられて構成され、
前記第２半透光部は、前記透光性基板の表面に、光半透過性の第１半透光膜と光半透過性の第２半透光膜が積層されて構成され、
前記遮光部は、前記透光性基板の表面に、前記第１半透光膜、前記第２半透光膜及び遮光膜が積層されて構成され、かつ、
前記第２半透光膜と前記遮光膜は、互いのエッチングに対して耐性を有する膜であり、
前記第１半透光膜と前記遮光膜は、同種のエッチングガス又はエッチング液によってエッチング可能な材料からなることを特徴とする、４階調フォトマスク。 A light-shielding portion, a light-transmitting portion, and a first semi-transparent portion and a second semi-transparent portion having different light transmittances, and a resist pattern having different thicknesses is formed stepwise or continuously on the transfer target. A four-tone photomask,
The first semi-transparent portion is configured by providing a light semi-transmissive first semi-transparent film on the surface of the translucent substrate,
The second semi-transmissive part is configured by laminating a light semi-transmissive first semi-transmissive film and a light semi-transmissive second semi-transmissive film on the surface of the translucent substrate,
The light shielding portion is configured by laminating the first semi-transmissive film, the second semi-transmissive film, and a light shielding film on the surface of the translucent substrate , and
The second semi-transparent film and the light shielding film are films having resistance to mutual etching,
Wherein said light shielding film is first HanToruHikarimaku, characterized Rukoto such etchable material by etching gas or etchant same type, 4 gradations photomask. 被転写体上に、前記遮光部に対応する部分の膜厚が最も厚く、前記第２半透光部に対応する部分で膜厚が次に厚く、前記第１半透光部に対応する部分で薄く、透光部に対応する部分で膜がないレジストパターンを形成するものであることを特徴とする、請求項６に記載の４階調フォトマスク。 The portion corresponding to the light-shielding portion on the transfer body is thickest, the portion corresponding to the second semi-transparent portion is the next thickest, and the portion corresponding to the first semi-transparent portion The four-tone photomask according to claim 6 , wherein the resist pattern is a thin and thin resist pattern having no film at a portion corresponding to the light transmitting portion. 前記第１半透光部と第２半透光部は、露光光の光透過率が２０〜５０％であることを特徴とする、請求項６又は７に記載の４階調フォトマスク。 The first semi-light-transmitting portion and the second semi-light-transmitting portion is characterized by light transmittance of the exposure light is 20% to 50%, 4 tone photo mask according to claim 6 or 7. 前記第２半透光膜は、モリブデンシリサイドを含み、前記第１半透光膜及び前記遮光膜はクロムを主成分とすることを特徴とする、請求項６〜８のいずれかに記載の４階調フォトマスク。 Said second HanToruHikarimaku comprises molybdenum silicide, the first HanToruHikarimaku and the light-shielding film is characterized by mainly composed of chromium, 4 according to any one of claims 6-8 Tone photomask. 請求項６に記載の４階調フォトマスクを用いて露光し、被転写体上にレジストパターンを形成し、
前記透光部に対応する部分で、被転写体に第１エッチングを施し、
前記レジストパターンのうち前記第１半透光部に対応する部分を除去し、前記被転写体に第２エッチングを施し、
更に、前記レジストパターンのうち前記第２半透光部に対応する部分を除去し、前記被転写体に第３エッチングを施すことを含む、４階調フォトマスクの使用方法。 It exposes using the 4 gradation photomask of Claim 6, forms a resist pattern on a to-be-transferred body,
At a portion corresponding to the light-transmitting portion, a first etching is performed on the transfer object,
Removing a portion of the resist pattern corresponding to the first semi-translucent portion, and performing a second etching on the transfer object;
Further, a method for using a four-tone photomask, comprising: removing a portion of the resist pattern corresponding to the second semi-translucent portion and performing a third etching on the transfer target. 請求項５又は１０に記載の使用方法を含む、液晶表示装置の製造方法。 The manufacturing method of a liquid crystal display device containing the usage method of Claim 5 or 10 .
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009057660A1 (en) * 2007-11-01 2009-05-07 Ulvac Coating Corporation Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask
JP4714311B2 (en) * 2008-02-28 2011-06-29 Ｈｏｙａ株式会社 Multi-tone photomask manufacturing method and pattern transfer method for thin film transistor substrate
JP2010044149A (en) * 2008-08-11 2010-02-25 Hoya Corp Multi-gradation photomask, pattern transfer method, and manufacturing method of display unit using multi-gradation photomask
JP5121020B2 (en) * 2008-09-26 2013-01-16 Ｈｏｙａ株式会社 Multi-tone photomask, photomask blank, and pattern transfer method
TW201030451A (en) * 2008-09-30 2010-08-16 Hoya Corp Multi-tone photomask and method of manufacturing the same
KR101186890B1 (en) * 2009-05-21 2012-10-02 엘지이노텍 주식회사 Half tone mask and method of manufacturig the same
JP2011027878A (en) * 2009-07-23 2011-02-10 Hoya Corp Multi-gradation photomask, method of manufacturing the same, and pattern transfer method
TWI422966B (en) * 2009-07-30 2014-01-11 Hoya Corp Multitone photomask, photomask blank, method of manufacturing the multitone photomask, and pattern transfer method
KR101269062B1 (en) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 Blankmask and method for fabricating photomask using the same
JP5635577B2 (en) * 2012-09-26 2014-12-03 Hoya株式会社 Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method
KR102093101B1 (en) * 2014-08-25 2020-04-14 (주)에스앤에스텍 Multi-gray scale photomask and manufacturing method thereof
JP6726553B2 (en) * 2015-09-26 2020-07-22 Hoya株式会社 Photomask manufacturing method and display device manufacturing method
WO2018048902A1 (en) 2016-09-06 2018-03-15 Platform Orthopedic Solutions Inc A system, platform, device and method for personalized shopping
US20180160777A1 (en) 2016-12-14 2018-06-14 Black Brass, Inc. Foot measuring and sizing application
WO2018127811A1 (en) 2017-01-06 2018-07-12 Platform Orthopedic Solutions Inc. System, platform and method for personalized shopping using an automated shopping assistant
CN111066051B (en) 2017-06-27 2024-09-10 耐克创新有限合伙公司 System, platform and method for personalized shopping using automated shopping assistant
CN109188854B (en) * 2018-10-18 2020-06-09 合肥鑫晟光电科技有限公司 Mask plate, display substrate, manufacturing method of display substrate and display device
WO2021243258A1 (en) 2020-05-29 2021-12-02 Nike Innovate C.V. Systems and methods for processing captured images

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09146259A (en) * 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd Gradation mask and its production and method for generating special surface shape by using gradation mask
JP2003029393A (en) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
JP2006317665A (en) * 2005-05-12 2006-11-24 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask, and method for fabricating them
JP2007248988A (en) * 2006-03-17 2007-09-27 Hoya Corp Manufacturing method for gray tone mask
JP2007271696A (en) * 2006-03-30 2007-10-18 Hoya Corp Gray tone mask blank and photomask
JP2008033330A (en) * 2006-07-28 2008-02-14 Samsung Electronics Co Ltd Multi-tone optical mask, method of manufacturing the same, and method of manufacturing thin-film transistor substrate by using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1115134A (en) * 1997-06-26 1999-01-22 Hitachi Ltd Photo mask and pattern forming method using the same
KR100560969B1 (en) * 1998-12-31 2006-06-23 삼성전자주식회사 Manufacturing method of optical mask for liquid crystal display device
CN1379461A (en) * 2001-03-30 2002-11-13 华邦电子股份有限公司 Double-embedding technology for internal connection line structure
JP2003121978A (en) * 2001-10-12 2003-04-23 Hoya Corp Method for fabricating halftone phase shifting mask
JP3984116B2 (en) * 2002-07-09 2007-10-03 株式会社東芝 Photomask manufacturing method
JP3727911B2 (en) * 2002-09-25 2005-12-21 株式会社東芝 Mask, mask manufacturing method, and semiconductor device manufacturing method
JP3854241B2 (en) * 2003-04-25 2006-12-06 株式会社東芝 Method for manufacturing focus monitor mask and method for manufacturing semiconductor device
KR20060120613A (en) * 2003-09-05 2006-11-27 쇼오트 아게 Attenuated phase shift mask blank and photomask

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09146259A (en) * 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd Gradation mask and its production and method for generating special surface shape by using gradation mask
JP2003029393A (en) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
JP2006317665A (en) * 2005-05-12 2006-11-24 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask, and method for fabricating them
JP2007248988A (en) * 2006-03-17 2007-09-27 Hoya Corp Manufacturing method for gray tone mask
JP2007271696A (en) * 2006-03-30 2007-10-18 Hoya Corp Gray tone mask blank and photomask
JP2008033330A (en) * 2006-07-28 2008-02-14 Samsung Electronics Co Ltd Multi-tone optical mask, method of manufacturing the same, and method of manufacturing thin-film transistor substrate by using the same

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