JP4600733B2 - Semiconductor laser device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor laser device having improved exhaust heat performance and a method for manufacturing the same.

  The light emitting region of the semiconductor laser is currently expanded to a blue-violet short wavelength region, and is expected to be applied to optical communication, high density optical recording, or a display. While the light emitting area is expanded in this way, there are problems such as reduction in operating current, low noise, low cost, high output, high speed operation, and reliability during high temperature operation. There are still many issues that need to be improved in applied equipment. In particular, regarding the problems related to heat generation, the use of semiconductor lasers in various fields is limited. This problem related to heat generation is related to a large amount of heat generated per unit area of the semiconductor laser, and heat circulation causes phenomena such as an increase in junction temperature and generation of stress. As the operating temperature of the junction increases, there is a problem that the light emission output, the light emission efficiency, the lifetime of the semiconductor laser, and the like are lowered, and the wavelength of light generated from the semiconductor laser is increased.

As a method for controlling the heat generation of the semiconductor laser that causes these problems, for example, a method in which a semiconductor laser element is disposed on a submount such as silicon (Si) and the lower surface of the submount is bonded to a heat sink is used. Yes. There is also a method in which a heat sink is bonded to both the n-side electrode and the p-side electrode of the semiconductor laser element to release the generated heat. For example, in Patent Document 1, a gap is formed by sandwiching a spacer between two heat sinks, a bar-shaped semiconductor laser element is disposed in the gap, and then the solder that has been coated on the heat sink is melted in advance. Even if the element has a unique curved shape, the semiconductor laser element and the heat sink can be brought into close contact and bonded.
Japanese Patent Laid-Open No. 11-340581

  However, it is clear that the heat removal effect is enhanced by sandwiching the semiconductor laser element from both sides with a heat sink. However, when the heat sink is provided on each side, the number of processes increases and two types of solder materials having different melting points are used. Therefore, there are many restrictions on the choice of solder material. On the other hand, when heat sinks are provided on both sides of the semiconductor laser element at the same time, there may be a problem in positioning accuracy, and a highly accurate positioning mechanism is required.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a semiconductor laser device that can be manufactured by a simple process and can improve heat exhaustion, and a method for manufacturing the same.

The semiconductor laser device according to the present invention has the following requirements (A) to (E) to improve the exhaust heat performance.
(A) Substrate (B) Semiconductor laser device disposed on the substrate with a support member in between (C) Electrode member disposed adjacent to the semiconductor laser device on the substrate (D) Fixed to the electrode member fixing portion, and opposed to the upper surface of the semiconductor laser element with protruding from the fixed portion, joint portion fixed to the upper surface of the protective member (D) a semiconductor laser device having a visor portion for protecting the semiconductor laser element, and bonding a support portion extending from the longitudinal ends of the parts upward, heat member whose other end is fixed to the visor portion of the protective member with one end of the support portion is fixed to the junction

The method for manufacturing a semiconductor laser device according to the present invention includes the following steps (F) to (K), thereby manufacturing a semiconductor laser device having high heat removal properties by a simple process.
(F) A step of disposing the semiconductor laser element on the substrate with the support member interposed therebetween (G) A step of disposing an electrode member on the substrate adjacent to the semiconductor laser element (H) A fixing for fixing to the electrode member And a step of forming a protective member having a flange for protecting the semiconductor laser element and extending from the fixing part and facing the upper surface of the semiconductor laser element. (I) Bonding for fixing to the upper surface of the semiconductor laser element parts, and has a support portion from the longitudinal ends of the junction extends upward, the junction of the step (J) heat exhaust member to which one end of the support portion forms a heat member that is fixed to the junction A step of fixing to the upper surface of the semiconductor laser element (K) a step of fixing the fixing portion of the protection member to the electrode member, and fixing the other end of the support portion of the exhaust heat member to the flange portion of the protection member

According to the semiconductor laser device of the present invention, the joint portion of the heat exhaust member is fixed to the upper surface of the semiconductor laser element, and the support portion extending upward from both ends in the length direction of the joint portion is provided. Since one end of the semiconductor laser device is fixed to the joint portion and the other end is fixed to the flange portion of the protective member, the heat generated in the semiconductor laser element can be released to the protective member via the support portion of the heat exhaust member. it can. Therefore, exhaust heat performance can be improved, which is advantageous for a high-power laser. Moreover, stability of a member can be improved by fixing an exhaust heat member to the collar part of a protection member.

According to the method for manufacturing a semiconductor laser device of the present invention, the semiconductor laser device has a joint portion for fixing to the upper surface of the semiconductor laser element, and a support portion extending upward from both ends in the length direction of the joint portion. There was formed a heat member that is fixed to the joint, after fixing the junction of the exhaust heat member on the upper surface of the semiconductor laser device, to fix the other end of the support portion of the heat exhaust member eaves portion of the protective member Since it did in this way, the junction part of a heat exhaust member can be simply joined to a semiconductor laser element. Therefore, it is possible to realize a semiconductor laser device with high heat exhaustion by a simple process.

  In particular, if a height adjustment structure for absorbing the variation in the thickness of the semiconductor laser element is formed on at least a part of the support portion, the height adjustment structure can absorb a subtle difference in thickness of the semiconductor laser element. Can do. Therefore, it is possible to prevent the semiconductor laser element from being loaded, to suppress cracking and chipping, and to improve reliability. In addition, it is possible to eliminate the need to strictly determine the size of the heat exhausting member in accordance with the thickness of the semiconductor laser element, thereby simplifying the manufacturing process. As such a height adjustment structure, an accordion-like fold is formed so that it can be expanded or contracted, or a flexible structure that can be easily expanded in the lateral direction by thinning a part of the support portion. Etc. are preferable.

  In particular, a thin film made of gold (Au) is formed on the surface of at least the joining portion of the exhaust heat member, and heat and pressure or ultrasonic waves are applied to the joining portion, so that the thin film of gold (Au) is used as an adhesive layer. If the bonding portion is bonded to the upper surface of the semiconductor laser element, the gold (Au) thin film and the gold (Au) layer of the electrode of the semiconductor laser element can be easily bonded without using solder. Therefore, it is possible to eliminate the protrusion of the solder, the deterioration of accuracy, or the reduction of the exhaust heat effect, and to increase the position accuracy by a simple process. Further, it is advantageous in terms of time and cost.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 shows a schematic configuration of a semiconductor laser element 10 included as a component in a semiconductor laser device according to an embodiment of the present invention. The semiconductor laser element 10 is, for example, a laser diode bar in which a plurality of laser diode (LD) chips 11 are arranged side by side, and has a length of about 10 mm and a resonator length of 200 μm to 1.5 mm. The thickness is about 700 μm and the thickness is about 100 μm. Here, the length is a dimension in the arrangement direction of the laser diode chips 11, the resonator length is a dimension in the emission direction of the light LB from the semiconductor laser element 10, that is, the dimension in the resonator direction, and the thickness is It is a dimension in a direction orthogonal to both the arrangement direction of the laser diode chips 11 and the resonator direction.

  Each laser diode chip 11 has a semiconductor layer 13 including an active layer on a substrate 12. The constituent material and the oscillation wavelength of the semiconductor laser element 10 are not particularly limited. Specific examples of the configuration include, for example, an AlGaInP mixed crystal, a GaInP mixed crystal, and an AlInP on a substrate 12 made of gallium arsenide (GaAs). A red laser including the semiconductor layer 13 made of an AlGaInP-based semiconductor such as a mixed crystal can be given.

  On the semiconductor layer 13, for example, a p-side electrode 14 is formed corresponding to each laser diode chip 11. The p-side electrode 14 has a configuration in which, for example, a titanium (Ti) layer, a platinum (Pt) layer, and a gold (Au) layer are sequentially stacked from the semiconductor layer 13 side. In addition, an n-side electrode 15 is provided on the back surface of the substrate 12 corresponding to each laser diode chip 11, for example. The n-side electrode 15 has a configuration in which, for example, a gold (Au) layer, an alloy layer of gold (Au) and germanium (Ge), and a gold (Au) layer are sequentially stacked from the substrate 12 side.

  FIG. 2 shows a cross-sectional structure in the length direction of the semiconductor laser device provided with the semiconductor laser element 10, and FIG. 3 shows a cross-sectional structure along the emission direction of the light LB. This semiconductor laser device is used as a light source of a laser projector or the like. For example, the semiconductor laser device has a configuration in which a semiconductor laser element 10 is disposed on a heat sink 20 as a substrate with a submount 21 interposed therebetween. . The semiconductor laser element 10 is disposed so that the p-side electrode 14 faces the submount 21. An electrode member 30 is disposed on the heat sink 20 adjacent to the semiconductor laser element 10, and a protective member 40 is provided thereon.

  The heat sink 20 is made of a material having electrical and thermal conductivity such as copper (Cu), for example, and a thin film made of gold (Au) or the like is attached to the surface. The thermal conductivity is a characteristic necessary for releasing a large amount of intense heat generated from the semiconductor laser element 10 and maintaining the semiconductor laser element 10 at an appropriate temperature. This is a characteristic necessary for efficient conduction.

  The submount 21 is made of, for example, silicon carbide (SiC), and has dimensions of, for example, a length of about 11 mm, a depth of about 2 mm, and a thickness of about 300 μm. Here, the depth is a dimension in the emission direction of the light LB from the semiconductor laser element 10, that is, in the resonator direction. Although not shown, a welding layer made of solder or the like is provided between the submount 21 and the heat sink 20 and between the submount 21 and the semiconductor laser element 10.

  The electrode member 30 is made of, for example, the same material as the heat sink 20. An insulating plate 31 made of, for example, a glass epoxy material is provided between the heat sink 20 and the electrode member 30, and the heat sink 20 and the electrode member 30 are electrically insulated. The electrode member 30 is provided with a step portion 30A at one corner on the semiconductor laser element 10 side. One end of a wire 50 made of gold (Au) having a thickness of, for example, 200 μm is provided on the step portion 30A. The parts are joined. The other end of the wire 50 is bonded to the upper surface of the semiconductor laser element 10, and the electrode member 30 and the upper surface of the semiconductor laser element 10 are electrically connected via the wire 50.

  The protection member 40 is made of, for example, the same material as the heat sink 20. The protection member 40 includes a fixing portion 40A fixed to the electrode member 30 and a flange portion 40B provided so as to protrude from the fixing portion 40A and protecting the semiconductor laser element 10 and the wire 50. The fixing portion 40A and the flange portion 40B do not necessarily have the same thickness as shown in FIG. 3, and the flange portion 40B may be thinner than the fixing portion 40A. Further, the fixing portion 40A does not necessarily need to cover the entire upper surface of the electrode member 30.

  Further, this semiconductor laser device has a heat exhaust member 60 on the upper surface of the semiconductor laser element 10. The exhaust heat member 60 is made of, for example, copper (Cu), and a thin film (not shown) made of gold (Au) is formed on the surface thereof. The exhaust heat member 60 includes a joining portion 60A fixed to the upper surface of the semiconductor laser element 10 and a support portion 60B having one end fixed to the joining portion 60A and the other end fixed to the flange portion 40B of the protection member 40. And have. Thereby, in this semiconductor laser device, the heat generated in the semiconductor laser element 10 can be released to the protection member 40 via the support portion 60B of the heat exhaust member 60, and the heat exhaust performance can be improved. ing.

  60 A of joining parts are preferably adhere | attached on the upper surface of the semiconductor laser element 10 by making the thin film of gold (Au) formed in the surface of the heat exhausting member 60 into the contact bonding layer 60C. This is because by applying heat and pressure, it can be easily bonded to the gold (Au) layer formed on the outermost surface of the n-side electrode 15. In this case, in order to obtain good adhesion, the thickness of the gold (Au) thin film and the thickness of the gold (Au) layer of the n-side electrode 15 are each about 0.5 μm to 0.1 μm, for example. preferable. Note that the gold (Au) thin film does not necessarily have to be formed on the entire heat exhausting member 60, and may be provided at least in the joint 60A. The adhesive layer 60C may be a layer made of solder. As the solder, for example, solder containing no lead (lead-free solder) such as tin (Sn) as a main component is preferable, but lead solder may also be used.

  The support portion 60B extends substantially vertically upward from both ends in the length direction of the joint portion 60A, and is fixed to the upper surface of the flange portion 40B of the protection member 40 with a screw or an adhesive. The support portion 60B does not necessarily need to cover the entire upper surface of the flange portion 40B, and may cover only a part of the upper surface of the flange portion 40B, for example, as shown in FIG. Alternatively, the support portion 60B may be fixed to the lower surface of the flange portion 40 as shown in FIG. Also in this case, although not shown, only a part of the lower surface of the collar portion 40B may be covered. Furthermore, as shown in FIG. 6, you may make it fix to the side surface of the collar part 40B. In this case, for example, it is desirable that a screw hole (not shown) provided in the flange portion 40B is elliptical and the length of the support portion 60B can be adjusted.

  It is preferable that a height adjustment structure 60D for absorbing variations in the thickness of the semiconductor laser element 10 is formed in a part of the support portion 60B. A subtle difference in thickness of the semiconductor laser element 10 can be absorbed by the height adjustment structure 60D, thereby preventing the semiconductor laser element 10 from being loaded, and preventing cracks and chipping from increasing reliability. It is because it can improve. Further, it is not necessary to strictly determine the size of the heat exhausting member 60 according to the thickness of the semiconductor laser element 10, and the manufacturing process can be simplified. As such a height adjustment structure 60D, for example, a stretchable structure that can be stretched by forming a fold in an accordion shape is preferable. Alternatively, as shown in FIG. 7, a flexible structure that can easily swell laterally by thinning a part thereof is also preferable.

  This semiconductor laser device can be manufactured, for example, as follows.

  First, for example, on the front side of the substrate 12 made of the above-described material, for example, by MOCVD (Metal Organic Chemical Vapor Deposition) method or MBE (Molecular Beam Epitaxy) method, A semiconductor layer 13 is formed. Next, the p-side electrode 14 and the n-side electrode 15 are formed, and the substrate 12 is adjusted to a predetermined size. Thereby, the bar-shaped semiconductor laser element 10 shown in FIG. 1 is formed.

  Subsequently, a submount 21 made of the above-described dimensions and materials is prepared, and a gold (Au) layer and a tin (Sn) layer are formed on the surface of the submount 21 on which the semiconductor laser element 10 is provided by, for example, vacuum deposition. By sequentially laminating, a welding layer (not shown) is formed. After that, the lower surface of the semiconductor laser element 10 and the welding layer of the submount 21 are made to face each other, alignment is performed with high accuracy, and the semiconductor laser element 10 is placed on the submount 21. Subsequently, the semiconductor laser device 10 is welded to the submount 21 as shown in FIG.

  After the semiconductor laser element 10 is welded to the submount 21, the submount 21 is placed on the heat sink 20 with a welding layer (not shown) made of, for example, solder, and subjected to heat treatment. As a result, as shown in FIG. 8B, the semiconductor laser element 10 is disposed on the heat sink 20 with the submount 21 therebetween.

  After the semiconductor laser element 10 is disposed on the heat sink 20, the insulating plate 31 and the electrode member 30 are disposed on the heat sink 20 adjacent to the semiconductor laser element 10 as shown in FIG. 9A. After the electrode member 30 is disposed on the heat sink 20, similarly as shown in FIG. 9A, one end of the wire 50 made of the above-described thickness and material is joined to the step portion 30A of the electrode member 30, and the wire 50 The other end is bonded to the upper surface of the semiconductor laser element 10.

  On the other hand, as shown in FIG. 9B, a fixing part 40A for fixing to the electrode member 30 and a flange part 40B for protecting the semiconductor laser element 10 are provided so as to protrude from the fixing part 40A. The protective member 40 is formed.

  Further, as shown in FIG. 10A, a heat exhaust member 60 having a joint portion 60A for fixing to the upper surface of the semiconductor laser element 10 and a support portion 60B having one end fixed to the joint portion 60A is formed. . A thin film made of gold (Au) is formed on the surface of at least the joint 60A of the heat exhausting member 60.

  After forming the protection member 40 and the exhaust heat member 60, the joint 60A of the exhaust heat member 60 is fixed to the upper surface of the semiconductor laser element 10 as shown in FIG. At this time, the joining portion 60A is pressed in the direction of arrow A with a trowel (not shown) to apply heat and pressure, whereby the gold (Au) thin film formed on the heat exhausting member 60 is used as the adhesive layer 60C to make the joining portion 60A a semiconductor laser. It is fixed on the upper surface of the element 10. Thereby, it is possible to easily join the gold (Au) thin film and the gold (Au) layer of the electrode of the semiconductor laser element without using solder. Therefore, it is possible to eliminate the protrusion of the solder, the deterioration of accuracy, or the reduction of the exhaust heat effect, and to increase the position accuracy by a simple process. Further, it is advantageous in terms of time and cost.

  The applied heat is preferably about 100 to 300 degrees, for example, on both the bonding portion 60A side and the semiconductor laser element side. Furthermore, it is more preferable if the temperature is lower than 100 degrees to 200 degrees. This is because if the temperature is too high, the solder of the welding layer that fixes the semiconductor laser element 10 may be melted. Moreover, you may make it add an ultrasonic wave with a heat | fever and a pressure.

  After fixing the joining portion 60A of the exhaust heat member 60 to the upper surface of the semiconductor laser element 10, the fixing portion 40A of the protection member 40 is fixed to the electrode member 30, and the support portion of the exhaust heat member 60 is fixed to the flange portion 40B of the protection member 40. The other end of 60B is fixed. At this time, it is preferable to absorb a subtle difference in thickness of the semiconductor laser element 10 using the height adjustment structure 60D. Thereby, it can prevent that a load is applied with respect to the semiconductor laser element 10, can suppress a crack and a chip | tip, and can improve reliability. In addition, it is not necessary to strictly determine the size of the heat removal member 60 in advance according to the thickness of the semiconductor laser element 10, and the manufacturing process can be simplified. Thus, the semiconductor laser device shown in FIGS. 2 and 3 is completed.

  This semiconductor laser device can also be manufactured as follows. This manufacturing method corresponds to the case where the support portion 60B is fixed to the side surface of the flange portion 40B as shown in FIG. 6, for example.

  First, the bar-shaped semiconductor laser device 10 shown in FIG. 1 is formed in the same manner as described above. 8A and 8B, the semiconductor laser device 10 is disposed on the heat sink 20 with the submount 21 in the same manner as described above.

  9A, the insulating plate 31 and the electrode member 30 are arranged on the heat sink 20 and the wires 50 are joined in the same manner as described above.

  After that, the protective member 40 is formed by the process shown in FIG. 9B in the same manner as described above.

  Further, as shown in FIG. 11A, a joining portion 60A for fixing to the upper surface of the semiconductor laser element 10 and a supporting portion 60B having one end fixed to the joining portion 60A and the other end being a free end are provided. The exhaust heat member 60 is formed.

  After forming the protection member 40 and the exhaust heat member 60, as shown in FIG. 11B, the joint 60A of the exhaust heat member 60 is fixed to the upper surface of the semiconductor laser element 10 in the same manner as described above. .

  After fixing the joining portion 60A of the exhaust heat member 60 to the upper surface of the semiconductor laser element 10, the fixing portion 40A of the protection member 40 is fixed to the electrode member 30, and the support portion of the exhaust heat member 60 is fixed to the flange portion 40B of the protection member 40. The other end of 60B is fixed. At this time, it is preferable to absorb a subtle difference in thickness of the semiconductor laser element 10 using the height adjustment structure 60D. Thereby, it can prevent that a load is applied with respect to the semiconductor laser element 10, can suppress a crack and a chip | tip, and can improve reliability. In addition, it is not necessary to strictly determine the size of the heat removal member 60 in advance according to the thickness of the semiconductor laser element 10, and the manufacturing process can be simplified. Thus, the semiconductor laser device shown in FIG. 6 is completed.

  In the above-described manufacturing method, heat and pressure are applied to the joint 60A, whereby a gold (Au) thin film formed on the heat exhaust member 60 is used as the adhesive layer 60C, and the joint 60A is formed on the upper surface of the semiconductor laser element 10. Although the case of fixing is described, the bonding portion 60A may be fixed to the upper surface of the semiconductor laser element 10 with the adhesive layer 60C made of solder in between. Even in this case, the applied heat is preferably set to a temperature equal to or higher than the melting point of the solder to be used, for example, about 100 to 300 degrees, and more preferably 100 to 200 degrees. preferable. Moreover, it is preferable to make the contact part 60A side contact | adhere by applying a pressure and heat with sufficient balance.

  Further, the joining method of the joining portion 60A is not limited to the method of applying heat and pressure as described above. For example, a method of applying heat and ultrasonic waves, a method of applying only pressure, or a method of applying only ultrasonic waves may be used.

  In this semiconductor laser device, when a predetermined voltage is applied between the n-side electrode 15 and the p-side electrode 14 of each laser diode chip 11, current is injected into the active layer of the semiconductor layer 13, and electron-hole Luminescence occurs due to recombination. Here, the joining portion 60A of the heat exhausting member 60 is fixed to the upper surface of the semiconductor laser element 10, and the support portion 60B of the heat exhausting member 60 is fixed to the flange portion 40B of the protective member 40. The heat generated in the element 10 is released to the protective member 40 through the support portion 60B of the exhaust heat member 60. Therefore, exhaust heat performance improves.

  As described above, in the semiconductor laser device of the present embodiment, the joining portion 60A of the heat exhaust member 60 is fixed to the upper surface of the semiconductor laser element 10, and the support portion 60B of the heat exhaust member 60 is used as the flange portion 40B of the protection member 40. Since it is fixed, the heat generated in the semiconductor laser element 10 can be released to the protection member 40 via the support portion 60B of the heat exhaust member 60. Therefore, exhaust heat performance can be improved, which is advantageous for a high-power laser. Moreover, the stability of a member can be improved by fixing the exhaust heat member 60 to the collar part 40B of the protection member 40.

  In the manufacturing method of the semiconductor laser device of the present embodiment, after fixing the joining portion 60A of the heat exhausting member 60 to the upper surface of the semiconductor laser element 10, the other end of the support portion 60B of the heat exhausting member 60 is connected to the flange of the protective member 40. Since it is fixed to the portion 40B, the joining portion 60A of the heat removal member 60 can be simply joined to the semiconductor laser element 10. Therefore, it is possible to realize a semiconductor laser device with high heat exhaustion by a simple process.

  In particular, if a height adjustment structure 60D for absorbing variations in the thickness of the semiconductor laser element 10 is formed on at least a part of the support portion 60B, a subtle difference in thickness of the semiconductor laser element 10 can be obtained. It can be absorbed by 60D. Therefore, it is possible to prevent a load from being applied to the semiconductor laser device 10 and to improve reliability by suppressing cracks and chips. In addition, it is possible to eliminate the need to strictly determine the size of the heat exhausting member 60 in accordance with the thickness of the semiconductor laser element 10, and the manufacturing process can be simplified.

  In particular, a thin film made of gold (Au) is formed on at least the surface of the joining portion 60A of the exhaust heat member 60, and heat and pressure or ultrasonic waves are applied to the joining portion 60A to join the thin film as the adhesive layer 60C. If the portion 60A is bonded to the upper surface of the semiconductor laser element 10, the gold (Au) thin film and the gold (Au) layer of the n-side electrode 15 of the semiconductor laser element 10 can be easily bonded without using solder. Can do. Therefore, it is possible to eliminate the protrusion of the solder, the deterioration of accuracy, or the reduction of the exhaust heat effect, and to increase the position accuracy by a simple process. Further, it is advantageous in terms of time and cost.

  While the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above embodiment, the case where the semiconductor laser device includes the bar-shaped semiconductor laser element 10 has been described. However, the semiconductor laser element 10 may be a laser diode chip.

  Further, for example, in the above embodiment, the case where the semiconductor laser element 10 is disposed so that the p-side electrode 14 faces the submount 21 has been described. However, the n-side electrode 15 is disposed on the submount 21. You may arrange | position so that it may oppose.

  Further, for example, in the above-described embodiment, the case where the height adjustment structure 60D is formed in a part of the support portion 60B has been described, but the height adjustment structure 60D is not necessarily provided.

  In addition, for example, in the above-described embodiment, two support portions 60B are formed on both sides in the length direction of the joint portion 60A, and two surfaces facing the resonator direction are blown away. If the third support portion is provided corresponding to the main emission side end face of the semiconductor laser element 10, the strong heat generated on the main emission side end face can be emitted through the third support portion.

  Furthermore, for example, the material and thickness of each layer described in the above embodiment, or the film formation method and film formation conditions are not limited, and other materials and thicknesses may be used, or other film formation methods. Alternatively, film forming conditions may be used.

  In addition, in the above-described embodiments and examples, the semiconductor laser has been described as an example. However, the present invention can be applied to other semiconductor light emitting elements such as a superluminescent diode in addition to the semiconductor laser.

  The semiconductor laser device according to the present invention can be used, for example, in a laser projector.

FIG. 3 is an enlarged perspective view showing a part of the semiconductor laser element shown in FIG. 2. It is sectional drawing showing the structure in the length direction of the semiconductor laser apparatus which concerns on one embodiment of this invention. It is sectional drawing showing the structure in the light emission direction of the semiconductor laser apparatus provided with the semiconductor laser element shown in FIG. FIG. 6 is a cross-sectional view illustrating a modification of the semiconductor laser device illustrated in FIG. 2. FIG. 6 is a cross-sectional view illustrating a modification of the semiconductor laser device illustrated in FIG. 2. FIG. 6 is a cross-sectional view illustrating a modification of the semiconductor laser device illustrated in FIG. 2. FIG. 6 is a cross-sectional view illustrating a modification of the semiconductor laser device illustrated in FIG. 2. FIG. 4 is a cross-sectional view illustrating a method of manufacturing the semiconductor laser device illustrated in FIGS. 2 and 3 in order of steps. FIG. 9 is a cross-sectional diagram illustrating a process following the process in FIG. 8. FIG. 10 is a cross-sectional diagram illustrating a process following the process in FIG. 9. FIG. 4 is a cross-sectional view illustrating another manufacturing method of the semiconductor laser device illustrated in FIGS. 2 and 3 in order of steps.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Semiconductor laser element, 11 ... Laser diode chip, 12 ... Substrate, 13 ... Semiconductor layer, 14 ... P side electrode, 15 ... N side electrode, 20 ... Heat sink, 21 ... Submount, 30 ... Electrode part, 31 ... Insulation Plate, 40 ... Protective member, 40A ... Fixing part, 40B ... Bridge part, 50 ... Wire, 60 ... Heat exhaust member, 60A ... Joint part, 60B ... Support part, 60C ... Adhesive layer, 60D ... Height adjustment structure

Claims (12)

A substrate;
A semiconductor laser element disposed on the substrate with a support member in between;
An electrode member disposed adjacent to the semiconductor laser element on the substrate;
A fixing part fixed to the electrode member, and a protection member that protrudes from the fixing part and faces the upper surface of the semiconductor laser element, and has a flange part for protecting the semiconductor laser element;
A joint portion fixed to the upper surface of the semiconductor laser element; and a support portion extending upward from both ends in the length direction of the joint portion. One end of the support portion is fixed to the joint portion and the other end There semiconductors laser device and a heat member that is fixed to the visor portion of the protective member. At least a portion of the support portion, that is the height adjustment structure is formed for absorbing variations in the thickness of the semiconductor laser element
The semiconductor laser device of 請 Motomeko 1 wherein. The height adjustment structure, Ru telescopic structure der
The semiconductor laser device of 請 Motomeko 2 wherein. The height adjustment structure, Ru structure der deflection
The semiconductor laser device of 請 Motomeko 2 wherein. At least the junction of the heat exhaust member has a thin film made of gold (Au) on the surface, the junction that is joined to the upper surface of the semiconductor laser element of the thin film as an adhesive layer
The semiconductor laser device of 請 Motomeko 1 wherein. Provided with a wire for electrically connecting the electrode member and the upper surface of the semiconductor laser element
The semiconductor laser device of 請 Motomeko 1 wherein. A step of disposing a semiconductor laser element on a substrate with a support member in between;
Disposing an electrode member adjacent to the semiconductor laser element on the substrate;
Forming a fixing part for fixing to the electrode member, and a protection member that protrudes from the fixing part and faces the upper surface of the semiconductor laser element, and has a flange part for protecting the semiconductor laser element;
Wherein a semiconductor junction for fixing to the upper surface of the laser element, and and a support portion extending upwardly from the longitudinal ends of the joint exhaust one end of the support portion is fixed to the joint Forming a thermal member;
Fixing the joint of the heat exhaust member to the upper surface of the semiconductor laser element;
Wherein the fixing portion of the protective member is fixed to the electrode member, the manufacturing method of the process and the including semiconductors laser device for fixing the other end of the support portion of the heat exhaust member eaves portion of the protective member. At least a portion of the support portion, that form a height adjustment structure for absorbing variation in the thickness of the semiconductor laser element
The method of manufacturing a semiconductor laser device 請 Motomeko 7 wherein. Wherein the height adjusting structure, that form a telescopic structure
The method of manufacturing a semiconductor laser device 請 Motomeko 8 wherein. Wherein the height adjusting structure, that form a deflecting structure
The method of manufacturing a semiconductor laser device 請 Motomeko 8 wherein. A thin film made of gold (Au) is formed on the surface of at least the joint of the exhaust heat member, and heat and pressure are applied to the joint, thereby using the thin film as an adhesive layer and using the joint as an upper surface of the semiconductor laser element. you fixed to
The method of manufacturing a semiconductor laser device 請 Motomeko 7 wherein. A thin film made of gold (Au) is formed on at least the surface of the joining portion of the exhaust heat member, and an ultrasonic wave is applied to the joining portion, whereby the joining portion is formed on the upper surface of the semiconductor laser element using the thin film as an adhesive layer. you fixed
The method of manufacturing a semiconductor laser device 請 Motomeko 7 wherein.

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