JP4277617B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device and a method for manufacturing the same, and particularly, in a nitride-based compound semiconductor light emitting device, a large number of irregularities are formed on the surface of the device to roughen the surface, thereby improving light extraction efficiency and improving light emission efficiency. The present invention relates to an effective manufacturing technique.

  As a light emitting element using a semiconductor crystal, a light emitting diode (LED), a laser diode (LD), an electroluminescence (EL) and the like are known.

  A GaN-based light emitting element is important as a blue or ultraviolet light source. White diodes made in combination with phosphors are expected as new light sources to replace incandescent bulbs and fluorescent lamps. For its spread, it is important that the luminous efficiency is high, and efforts for improvement are continued by improving the crystallinity and devising the LED structure.

  However, the luminous efficiency is currently limited to about 40 lm / W, which exceeds 10 lm / W of incandescent bulbs, but does not reach the fluorescent lamp level of 100 lm / W or more.

  The luminous efficiency of the light emitting element is proportional to the product of the internal quantum efficiency and the light extraction (external quantum efficiency). The internal quantum efficiency has reached 70% due to the improvement of the LED structure and crystallinity, and already has a saturation tendency. On the other hand, the extraction efficiency usually remains below 20%. That is, the low light emission efficiency is mainly due to the low extraction efficiency.

  In a GaAs-based light emitting element, a technique for providing unevenness on the light emitting surface has been proposed. According to this proposal, unevenness is formed on the light emitting surface, so that when viewed microscopically, irregularities having various angles are formed on the light extraction surface, thereby increasing the effective solid angle and improving the light extraction efficiency. To do. For this surface unevenness, a nitric acid-based etchant, hydrofluoric acid, or an ammonia-hydrogen peroxide-based etchant is used.

  However, when the semiconductor layer is formed by the MOCVD method, since the film is thin, it is difficult to apply the surface unevenness method using the etching solution. Therefore, a method for manufacturing a semiconductor light emitting element in which the light emitting surface is roughened by the following steps (1) to (4) has been proposed (see, for example, Patent Document 1).

  (1) A gallium arsenide-based one-conductivity-type semiconductor layer and a reverse-conductivity-type semiconductor layer are sequentially stacked on a semiconductor substrate.

  (2) A Zn-containing layer is formed on the reverse conductivity type semiconductor layer.

  (3) At least the opposite conductivity type semiconductor layer and the Zn-containing layer are heated to diffuse Zn into the opposite conductivity type semiconductor layer.

(4) The Zn-containing layer is removed by etching, and the surface of the reverse conductivity type semiconductor layer is roughened.
Japanese Patent Laid-Open No. 2003-0461117

  As described above, the light emission efficiency of the light emitting element is mainly due to the low light extraction efficiency. To increase the light extraction efficiency, it is effective to form a large number of irregularities on the element surface. It is known.

  However, in the case of nitride compound semiconductor crystals, the Ga polar face is particularly chemically stable, and it is difficult to create such irregularities by a simple method such as normal wet etching. is there.

  The technique of Patent Document 1 described above also forms irregularities on the surface by wet etching. That is, Patent Document 1 is a technique for improving the light extraction efficiency by roughening the surface of a GaAs LED by wet etching. (1) First, a ZnO or ZnAs layer is formed on the LED surface. (2) Next, heat treatment is performed to diffuse Zn into the LED surface layer. At this point, unevenness has not yet been made. (3) When wet etching is performed with an HF-based etchant after the heat treatment, the Zn surface layer and the diffused portion of the LED surface layer are removed together with the ZnO layer, and irregularities are formed on the surface.

  Unlike this GaAs-based semiconductor, GaN-based semiconductors are difficult to form asperities by wet etching because the Ga-polar surface, in particular, is hardly affected by wet etching.

  Accordingly, an object of the present invention is to solve the above-mentioned problems, and in a material system where wet etching is not effective, such as a nitride compound semiconductor crystal, fine irregularities are formed on the element surface by simple means, thereby improving the light extraction efficiency. An object of the present invention is to provide a semiconductor light emitting device capable of improving the light emission efficiency of the light emitting device and a method for manufacturing the same.

  In order to achieve the above object, the present invention is configured as follows.

  According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device comprising: forming a metal film or a metal nitride film on a compound semiconductor layer on a surface of an epitaxial wafer after crystal growth; and a wafer having the metal film or the metal nitride film formed thereon. And a step of forming a large number of fine irregularities on the compound semiconductor layer on the wafer surface by performing a heat treatment in an etching gas atmosphere.

  For example, after the formation of irregularities, the network metal or metal nitride film is left without being removed, and a compound semiconductor layer such as GaN is grown on it again, so that many new irregularities are formed on the surface. Included is a configuration that remains formed and the network structure is confined and protected underneath.

  According to a second aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to the first aspect, the metal film or the metal nitride film may be scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten. Forming a metal film comprising any one of these, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, manganese, copper, platinum or gold, or a metal nitride film containing any of these To do.

  According to a third aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to the first or second aspect, the thickness of the metal film or the metal nitride film is 1 μm or less.

  According to a fourth aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to any one of the first to third aspects, the heat treatment is performed in a gas mixture containing hydrogen and ammonia.

  According to a fifth aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to any one of the first to fourth aspects, the heat treatment is performed at a temperature of 700 ° C. or higher and 1200 ° C. or lower.

  According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor light emitting device according to any one of the first to fifth aspects, an electrode is formed in a surface region of the compound semiconductor layer on the wafer surface when forming the metal film or the metal nitride film. In this case, the region where the metal film or the metal nitride film is to be formed is selectively determined.

  According to a seventh aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to any one of the first to sixth aspects, the metal film or the metal nitride film is removed after the heat treatment.

  The invention according to claim 8 is the method for manufacturing a semiconductor light emitting device according to any one of claims 1 to 7, wherein the outermost compound semiconductor layer forming the irregularities is a nitride compound semiconductor layer, and the nitride A wafer in which a layer that is less likely to be etched than the nitride compound semiconductor layer is inserted under the compound compound semiconductor layer is used.

  According to a ninth aspect of the present invention, in the method of manufacturing a semiconductor light emitting device according to the eighth aspect, the nitride semiconductor having an Al composition of 1% or more and a thickness of 3 nm or more, preferably 5 nm or more as the layer which is difficult to be etched. It is characterized by inserting a layer.

  According to a tenth aspect of the present invention, there is provided a semiconductor light emitting device comprising: a light emitting layer including an active layer; a contact layer made of a nitride semiconductor formed on the light emitting layer; and a light extraction side formed on the contact layer. A nitride-based compound semiconductor light-emitting device including an electrode is characterized in that a large number of fine irregularities are formed on the light extraction surface of the surface of the contact layer to form a light-scattering rough surface.

  According to an eleventh aspect of the present invention, in the semiconductor light emitting device according to the tenth aspect, the light emitting layer has any one of a single heterojunction, a double heterojunction, and a homojunction.

<Key points of the invention>
In the present invention, a metal or metal nitride film is formed on the element surface, and then heat treatment is performed in an etching gas atmosphere to form fine irregularities on the compound semiconductor layer on the surface, for example, a nitride-based compound semiconductor layer. . At this time, unevenness is suitably formed by performing the heat treatment in an air stream containing hydrogen and ammonia. This is presumably because the etching of the nitride compound semiconductor layer with hydrogen gas is promoted by the catalytic action of the metal or metal nitride formed on the surface.

  Therefore, as the metal film or metal nitride film formed on the element surface, scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, rhenium, iron, ruthenium, osmium, cobalt, rhodium, Any of a metal film made of iridium, nickel, palladium, manganese, copper, platinum or gold or a metal nitride film containing any of these may be used.

  The size and height of the unevenness formed during the heat treatment can be controlled by the conditions of the heat treatment and the thickness of the metal film or metal nitride film to be formed.

  The thickness of the metal film or metal nitride film formed on the surface of the LED is desirably 1 μm or less. This is because the thicker this layer is, the more the etching of the nitride compound semiconductor layer (for example, the GaN contact layer) on the wafer surface is promoted. If it is 1 micrometer or less, moderate unevenness | corrugation can be formed.

The heat treatment temperature is desirably 700 ° C. or higher and 1200 ° C. or lower. As the atmospheric gas at that time, it is desirable to use a mixed gas of H ₂ (hydrogen) and NH ₃ (ammonia) as described above. H ₂ is used to etch the LED surface layer. The reason why NH ₃ is mixed is to control the temperature at which etching occurs. When the heat treatment is performed only with H ₂ , the etching occurs at a low temperature, and the generation rate of Ga or the like generated by the etching exceeds the evaporation rate, so that droplets remain on the surface. If NH ₃ is mixed appropriately, the temperature at which etching occurs shifts to the high temperature side, so the Ga evaporation rate exceeds the generation rate and the surface becomes clean. Such control can be suitably performed in a temperature range of 700 ° C. or more and 1200 ° C. or less.

  In addition, if a layer that is difficult to be etched, such as AlGaN, is provided in the middle of the surface layer where the irregularities are to be formed, the progress of the etching stops at that layer, so the size and height of the irregularities can be controlled more reliably. . It is desirable that the layer for limiting the etching depth has an Al composition of 1% or more and a thickness of 3 nm or more (more preferably 5 nm or more). This is because when the Al composition is too small or the film thickness is too thin, it is difficult to obtain the ability to inhibit etching.

  The portion where the unevenness is formed can be selectively determined by limiting the formation region of the metal or metal nitride film using a mask or the like. That is, when forming a metal film or a metal nitride film, a metal film or a metal nitride film is formed by masking a partial region for forming an electrode in the surface region of a compound semiconductor layer (for example, a nitride-based compound semiconductor layer) on the wafer surface. The region to be formed can be selectively determined. Thereby, for example, it is possible not to form unevenness in the partial region where the electrode is formed.

  After the unevenness is formed by heat treatment, the surface metal or metal nitride film can be easily removed by etching or the like. When the metal or the metal nitride film is thin, for example, when Ti is 50 nm or less, it is changed to TiN having a network structure with a large number of fine holes formed by heat treatment. In this case, since TiN is conductive, it can be used as it is as a mesh electrode without being removed.

  As described above, the main point of the present invention is that a metal film or a metal nitride film is formed on the surface of an element obtained by epitaxially growing a crystal of a light emitting element structure, and a heat treatment is performed in an etching gas atmosphere to thereby form a compound semiconductor layer on the surface (for example, The object is to easily form fine irregularities in the nitride-based compound semiconductor layer.

  The advantage of the present invention is that irregularities are formed only by heat treatment without wet etching. As already described, unlike GaAs, GaN-based semiconductors are difficult to form asperities by wet etching because the Ga polar surface, in particular, is hardly affected by wet etching. In such a substance system, the present invention is meaningful in that fine irregularities can be easily formed on the element surface.

  In addition, when considering the light extraction efficiency of the LED, the layer structure of the light-emitting layer is not essential, and a double heterostructure, a single heterojunction structure, or a homojunction structure can be similarly considered.

  As described above, according to the present invention, a fine unevenness is formed on the surface of the compound semiconductor layer only by forming a metal film or a metal nitride film on the surface of the element by vapor deposition or the like and applying heat treatment in an etching gas atmosphere. Can be easily formed. Since it is an operation only of vapor deposition and heat treatment, it is simple and suitable for mass production.

  The present invention is particularly excellent in that irregularities are formed only by heat treatment without wet etching. As already described, unlike GaAs, GaN-based semiconductors are difficult to form asperities by wet etching because the Ga polar surface, in particular, is hardly affected by wet etching. In such a substance system, the present invention is meaningful in that fine irregularities can be easily formed on the element surface.

  That is, according to the present invention, in a material system in which wet etching is not effective, such as a nitride compound semiconductor crystal, fine irregularities are formed on the element surface by simple means, and the light extraction efficiency is improved by increasing the light extraction efficiency. Efficiency can be improved.

  Hereinafter, the present invention will be described based on the illustrated embodiments.

  FIG. 1 is a schematic cross-sectional view showing a configuration of a nitride semiconductor light emitting device in an embodiment of the present invention.

In the nitride semiconductor light emitting device shown in FIG. 1, an n-type GaN contact layer 4 having a film thickness of 4 μm, an MQW (multiple quantum well) active layer (light emitting layer) is formed on a sapphire substrate 5 by metal organic chemical vapor deposition (MOVPE). 3) A p-type Al _0.1 Ga _0.9 N cladding layer 2 having a thickness of 40 nm and a p-type GaN contact layer 1 having a thickness of 200 to 500 nm are epitaxially grown in this order. In this case, for example, Si is used as the n-type dopant, and for example, Mg is used as the p-type dopant. The MQW active layer 3 has a multiple quantum well structure in which six undoped GaN barrier layers having a thickness of 10 nm and six well layers made of undoped In _0.15 Ga _0.85 N having a thickness of 3 nm are alternately stacked.

  In this type of light emitting device, the portion that directly contributes to light emission is the active layer 3, the cladding layer 2 and the contact layer 4 sandwiching the active layer, and here, these layers are collectively defined as the light emitting layer. To do. In consideration of the light extraction efficiency, the layer structure of the light-emitting layer is not essential. Therefore, the light-emitting layer only needs to include an active layer. A portion that directly contributes to light emission in any structure such as a junction is referred to as a light emitting layer.

  As described above, on the wafer on which the semiconductor layer of the LED structure is epitaxially grown, the light extraction side electrode of the nitride-based compound semiconductor layer (p-type GaN contact layer 1), which is the outermost surface of the wafer, is precisely located. A large number of fine irregularities 10 are formed in a region (light extraction surface) excluding a partial region (electrode region) for providing 7a, thereby forming a rough surface for light scattering.

  After epitaxial growth of the semiconductor layer, the n-type GaN contact layer 4 is exposed to the surface by reactive ion etching (RIE), and an electrode 7b is formed on the n-type GaN contact layer 4 and an electrode on the p-type GaN contact layer 1 The light extraction side electrode 7a is formed in the use area by vapor deposition. These electrodes are usually connected to external wiring by bonding.

The method of forming the fine irregularities 10 on the light extraction surface in the surface region of the p-type GaN contact layer 1 to roughen the surface is based on the following steps (1) to (4).
(1) The epitaxial layer portion of the LED structure (n-type GaN contact layer 4 to p-type GaN contact layer 1) is grown.
(2) A Ti metal film is deposited on the surface of the p-type GaN contact layer (200 to 500 nm thick). The Ti film is selectively applied only to the surface portion (light extraction surface) to be roughened using a mask or the like. The metal film is not limited to Ti, but may be another metal.
(3) Heat treatment is performed in a hydrogen / ammonia atmosphere. By this heat treatment, a large number of irregularities 10 are formed on the LED surface (that is, the surface of the p-type GaN contact layer 1). Moreover, Ti of the surface becomes TiN by this heat treatment. The size and height of the irregularities 10 formed here can be controlled by heat treatment conditions. You may control by the technique of inserting the layer (VSL) which is harder to etch than this p-type GaN contact layer 1 under the p-type GaN contact layer 1 of the outermost surface which forms the unevenness | corrugation 10.
(4) The TiN film on the surface is removed with a chemical solution. However, this TiN film may be left and used as a mesh electrode.

  Thus, by roughening the surface of the GaN-based LED and roughening the surface, the light extraction efficiency of the LED surface is improved. Further, the roughening means only performs heat treatment in a hydrogen / ammonia atmosphere in the presence of a Ti metal film. Accordingly, it is possible to improve the light emission efficiency of the light emitting element by forming fine irregularities on the surface of the element by simple means, increasing the light extraction efficiency.

  Examples relating to the present invention will be described.

[Example 1]
A first embodiment will be described with reference to FIG. This is an example of manufacturing the nitride semiconductor light emitting device having the structure of FIG.

First, an n-type GaN contact layer 4 (thickness 4 μm), an In _0.15 Ga _0.85 N / GaN-3-MQW active layer 3 (well layer 3 nm, barrier layer 10 nm), and p-type Al _0.1 Ga on the sapphire substrate 5. _0.9 N clad layer 2 (thickness 40 nm) and p-type GaN contact layer 1 (thickness 500 nm) were sequentially grown and stacked using the MOVPE method to produce an LED structure as shown in FIG.

  A Ti film 6 was vacuum deposited on the surface as a metal film by 20 nm as shown in FIG. At that time, the portion where the light extraction side electrode was formed was masked so that Ti was not attached.

This was subjected to heat treatment at 1030 ° C. for 30 minutes in a mixed gas stream of H ₂ : NH ₃ = 4: 1. As a result, as shown in FIG. 2C, the p-type GaN contact layer 1 was etched to form a p-type GaN layer 1a having a large number of fine irregularities 10 formed on the surface. The shape of the irregularities 10 was a polygonal pyramid, and the height and diameter thereof were about 300 nm. Further, the Ti film 6 was nitrided and changed to a TiN film 6a having many fine holes of about several tens of nm.

After this TiN film 6a was removed using a mixed solution of HF: HNO ₃ = 1: 1, electrodes 7a and 7b were provided to form an LED element structure as shown in FIG.

  The luminous efficiency of this LED was 150% in the case of an LED having the same structure and no irregularities formed on the surface. From this, it can be said that the luminous efficiency of the LED is greatly improved by the formation of the unevenness.

[Example 2]
A second embodiment will be described with reference to FIG. This is an example in which a layer (VSL) that is not easily etched is inserted under the p-type GaN contact layer on the outermost surface that forms the unevenness.

First, an n-type GaN contact layer 4 (thickness 4 μm), an In _0.15 Ga _0.85 N / GaN-3-MQW active layer 3 (well layer 3 nm, barrier layer 10 nm), and p-type Al _0.1 Ga on the sapphire substrate 5. _0.9 N clad layer 2 (thickness 40 nm), p-type GaN contact layer 1 (thickness 300 nm), p-type Al _0.05 Ga _0.95 N layer 8 (thickness 200 nm), and p-type GaN contact layer 1 (thickness 300 nm) ) Are sequentially grown and stacked using the MOVPE method to produce an LED structure as shown in FIG.

  A Ti film 6 was vacuum deposited on the surface as a metal film by 20 nm as shown in FIG. At that time, the portion where the light extraction side electrode was formed was masked so that Ti was not attached.

This was subjected to heat treatment at 1030 ° C. for 30 minutes in a mixed gas stream of H ₂ : NH ₃ = 4: 1. As a result, as shown in FIG. 3C, the p-type GaN contact layer 1 was etched, resulting in a p-type GaN layer 1a having a large number of fine irregularities 10 formed on the surface. The shape of the irregularities 10 was a polygonal pyramid. Etching stopped at the p-type Al _0.05 Ga _0.95 N layer 8, so that the height and diameter of the irregularities 10 were about 200 nm, respectively. Further, the Ti film 6 was nitrided and changed to a TiN film 6a having many fine holes of about several tens of meters.

After this TiN layer 6a was removed using a mixed solution of HF: HNO ₃ = 1: 1, electrodes 7a and 7b were provided to form an LED element structure as shown in FIG.

  The luminous efficiency of this LED was 170% in the case of an LED having the same structure and no irregularities formed on the surface. From this, it can be said that the luminous efficiency of the LED is greatly improved by the formation of the irregularities 10.

[Example 3]
A third embodiment will be described with reference to FIG. This is an example in which the TiN film is left as it is and used as a mesh electrode.

First, an n-type GaN contact layer 4 (thickness 4 μm), an In _0.15 Ga _0.85 N / GaN-3-MQW active layer 3 (well layer 3 nm, barrier layer 10 nm), and p-type Al _0.1 Ga on the sapphire substrate 5. _{A 0.9} N clad layer 2 (thickness 40 nm) and a p-type GaN contact layer 1 (thickness 500 nm) were sequentially grown and stacked using the MOVPE method to produce an LED structure as shown in FIG.

  On the surface, a Ti film 6 was vacuum deposited as a metal film by 20 nm as shown in FIG. At that time, the portion where the light extraction side electrode 7a is formed is masked to prevent the attachment of Ti.

This was subjected to heat treatment at 1030 ° C. for 30 minutes in a mixed gas stream of H ₂ : NH ₃ = 4: 1. As a result, as shown in FIG. 4C, the p-type GaN contact layer 1 was etched, resulting in a p-type GaN layer 1a having a large number of fine irregularities 10 formed on the surface. The shape of the irregularities 10 was a polygonal pyramid, and the height and diameter thereof were about 300 nm. Further, the Ti film 6 was nitrided and changed to a TiN film 6a having many fine holes of about several tens of nm.

  The TiN film 6a was left as it was to function as an electrode, and electrodes 7a and 7b were further provided to form an LED element structure as shown in the figure. That is, in this embodiment, the light extraction side electrode provided on the p-type GaN layer 1a side is composed of the electrode 7a and the TiN film 6a.

  The luminous efficiency of this LED was 120% in the case of the LED of Example 1 from which the TiN film was removed. This is probably because the conductive TiN network electrode improved the current distribution.

<Other embodiments and modifications>
(A) Although the epitaxial layer of the LED structure is grown using the MOVPE method in the above embodiment, the growth method may be an MBE method (molecular beam epitaxy method) or other methods.
(B) Although the GaN-based light emitting device has been described in the above embodiment, it can be similarly used for light-emitting devices other than GaN-based devices.
(C) In the above embodiment, the example in which the mesh-like metal or metal nitride film is removed or not used as the mesh-like electrode after the formation of the projections and depressions has been described. You can also. For example, after the formation of the irregularities 10, if GaN is grown again without removing the network metal or metal nitride film 6 a, many new irregularities are formed on the surface, and the network structure is underneath. Be trapped. Thereby, it is also possible to improve the extraction efficiency while protecting the fragile conductive network film. It is also easy to control the size, density, and shape of the irregularities depending on the growth conditions.

It is the figure which represented typically the cross-sectional structure of the nitride semiconductor light-emitting device concerning embodiment of this invention. It is the figure which represented typically the manufacturing method of the nitride semiconductor light-emitting device concerning the 1st Example of this invention. It is the figure which represented typically the manufacturing method of the nitride semiconductor light-emitting device concerning the 2nd Example of this invention. It is the figure which represented typically the manufacturing method of the nitride semiconductor light-emitting device concerning the 3rd Example of this invention.

Explanation of symbols

1 p-type GaN contact layer 1a p-type GaN layer 2 p-type AlGaN cladding layer 3 MQW (multiple quantum well) active layer 4 n-type GaN contact layer 5 sapphire substrate 6 Ti film 6a TiN film 7a, 7b electrode 8 p-type AlGaN layer 10 Concavity and convexity

Claims (6)

Forming a metal film or metal nitride film having a thickness of 1 μm or less on a compound semiconductor layer that serves as a light extraction surface of the epitaxial wafer surface after crystal growth;
In the epitaxial wafer obtained by forming the metal film or the metal nitride film, by applying a heat treatment at 700 ° C. or higher 1200 ° C. or less of the temperature in the mixed gas containing hydrogen and ammonia, catalytic of the metal film or the metal nitride layer Etching is accelerated by various actions to form a large number of fine holes in the metal film or the metal nitride film, and to form a large number of fine irregularities in the compound semiconductor layer serving as the light extraction surface. A method for producing a semiconductor light emitting device. In the manufacturing method of the semiconductor light-emitting device according to claim 1,
As the metal film or metal nitride film, scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, manganese A method of manufacturing a semiconductor light emitting device, comprising forming a metal film made of any one of copper, platinum, and gold, or a metal nitride film containing any of these. In the manufacturing method of the semiconductor light-emitting device according to claim 1 or 2,
In the formation of the metal film or metal nitride film, a partial region for forming an electrode is masked in the surface area of the compound semiconductor layer on the surface of the epitaxial wafer, whereby the light extraction for forming the metal film or metal nitride film is performed. A method of manufacturing a semiconductor light emitting device, wherein a region of a compound semiconductor layer to be a surface is selectively determined . In the manufacturing method of the semiconductor light-emitting device according to claim 1,
By applying the heat treatment , a large number of fine holes are formed in the metal film or metal nitride film, and a number of fine irregularities are formed in the compound semiconductor layer serving as the light extraction surface. A method for producing a semiconductor light emitting device, comprising removing the film . In the manufacturing method of the semiconductor light-emitting device according to claim 1,
The outermost compound semiconductor layer that forms the irregularities is a nitride compound semiconductor layer, and is a layer that is less easily etched than the nitride compound semiconductor layer under the nitride compound semiconductor layer.
A method for manufacturing a semiconductor light emitting device, comprising using a wafer into which is inserted . In the manufacturing method of the semiconductor light-emitting device according to claim 5 ,
A method of manufacturing a semiconductor light emitting device, comprising inserting a nitride semiconductor layer having an Al composition of 1% or more and a thickness of 3 nm or more as the layer that is difficult to be etched .

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