JP4268480B2 - Electronic component sealing substrate and electronic device using the same - Google Patents

Description

  The present invention hermetically seals a micro electro mechanical mechanism of an electronic component having a semiconductor substrate, a micro electro mechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the micro electro mechanical mechanism. The present invention relates to an electronic component sealing substrate and an electronic device formed by sealing a microelectromechanical mechanism of an electronic component using the same.

  2. Description of the Related Art In recent years, an electronic component in which a very small electromechanical mechanism, so-called MEMS (Micro Electromechanical System), is formed by applying a processing technique for forming fine wiring such as a semiconductor integrated circuit element on the main surface of a semiconductor substrate such as a silicon wafer. Has been attracting attention, and is being developed for practical use.

  Such micro-electromechanical mechanisms include sensors such as accelerometers, pressure sensors, actuators, micro-mirror devices with movable micro-mirrors, optical devices, micro-chemical systems incorporating micro-pumps, etc. Prototypes have been developed and developed over a very wide field.

  FIG. 4 is a cross-sectional view of an example of a conventional electronic component sealing substrate for configuring an electronic device using an electronic component having such a micro-electromechanical mechanism and an electronic device using the same. In the example shown in FIG. 4, power is supplied to the main surface of the semiconductor substrate 21 on which the micro electro mechanical mechanism 22 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 22 to an external electric circuit. Is formed by being electrically connected to the micro electro mechanical mechanism 22, and the semiconductor substrate 21, the micro electro mechanical mechanism 22, and the electrode 23 constitute one electronic component 24. .

  Such electronic components 24 are usually formed in a multi-cavity form in which a large number are arranged on the main surface of the semiconductor substrate 21 in vertical and horizontal directions, as will be described later, and then cut into individual semiconductor substrates 21. In order to prevent foreign matter such as cutting powder from adhering to the microelectromechanical mechanism 22 and hindering operation during this cutting, it is covered and protected by a glass plate 25 or the like. ing.

  The electronic component 24 is accommodated in the recess A of the package 31 having the recess A for storing the electronic component, and the electrode 23 of the electronic component 24 is electrically connected to the electrode pad 32 of the package 31 such as a bonding wire 33. After the connection via the material, the recess A of the package 31 is covered with the lid 34 and the electronic component 24 is hermetically sealed in the recess A, thereby completing the electronic device. In this case, the electronic component 24 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the microelectromechanical mechanism 22.

  With respect to this electronic device, a lead-out portion of the wiring conductor 35 formed so as to lead out from the electrode pad 32 of the package 31 to the outer surface in advance is connected to an external electric circuit, so that the microelectronic machine is hermetically sealed. The mechanism 22 is electrically connected to an external electric circuit through the electrode 23, the bonding wire 33, the electrode pad 32, and the wiring conductor 35.

  In addition, such an electronic component 24 is usually manufactured by arranging a large number of elements vertically and horizontally on the main surface of a large-area semiconductor substrate. In this case, a method for manufacturing an electronic device is conventionally as follows. It was something like that. That is, a step 1 of preparing an electronic component in which a large number of electronic component regions formed by forming a micro-electromechanical mechanism 22 and an electrode 23 electrically connected to the micro-electromechanical mechanism 22 on a main surface of a semiconductor substrate are arranged vertically and horizontally; The step 2 for sealing the microelectromechanical mechanism 22 of each electronic component with a glass plate 25 or the like so that the periphery thereof is in a hollow state, and performing a cutting process such as a dicing process on the semiconductor substrate, It is manufactured by the step 3 of dividing into individual electronic components 24 and the step 4 of hermetically sealing the individual electronic components 24 in the electronic component storage package 31.

  In such a conventional manufacturing method, it is necessary to seal and protect each one of a large number of electronic component regions arranged on the main surface of the semiconductor substrate with a glass plate 25 or the like, The electronic component once sealed with the glass plate 25 is divided into individual electronic components 24 and then hermetically sealed in the package 31 and the electrode 23 is connected to the electrode pad 32 of the package 31 and the like. Due to the necessity of connection, there was a problem that productivity was poor and practical application was difficult.

  In order to solve this problem, there has been proposed a substrate that collectively covers and seals a large number of mechanical microelectronic machines arrayed on the main surface of a semiconductor substrate.

  As such a sealing substrate, a substrate made of a semiconductor substrate, a substrate made of a conductive metal plate, or the like is known.

  In the case of using a semiconductor substrate as a material, for example, apart from the first semiconductor substrate in which a large number of electronic component regions are arranged on the main surface, a large number of recesses are formed corresponding to the arrangement of the electronic component regions. The second semiconductor substrate for sealing is prepared, the second semiconductor substrate is covered on the main surface of the first semiconductor substrate, and the concave portion of the second semiconductor substrate covers the electronic component region of the first semiconductor substrate. Thus, a technique has been proposed in which the electronic component region (particularly, the microelectromechanical mechanism) of the first semiconductor substrate is sealed inside the second semiconductor substrate (see, for example, Patent Document 1). ).

  When a conductive substrate is used as a material, a pattern groove is formed on the conductive cover substrate, and the pattern groove is filled with glass or a ceramic material and planarized. A bonding pattern (electrode pad, etc.) is formed on the electrode, and an electrode of an electronic component is connected to the bonding pattern, and a conductive cover substrate is bonded to the main surface of the semiconductor substrate. For example, a technique has been proposed in which an electrode pattern for external wiring for leading a bonding pattern to the outside is formed (for example, see Patent Document 2).

In recent years, electronic components that form a micro-electromechanical mechanism, so-called MEMS (Micro Electromechanical System), have been driven at low voltage and increased in speed, and harmonic noise that enters from outside the electronic component. The high-frequency noise that propagates through the wiring conductor and propagates from outside causes changes in electrical characteristics and destruction of the MEMS region, and at the same time, harmonic noise contained in the signal propagating through the wiring conductor is external to the electronic component. It has become easy to be released. Furthermore, in order to solve this problem, a technique of mounting a chip inductor in the vicinity of the MEMS is taken, and the mounting area is increased.
JP 2001-144117 A JP 2002-43463 A

  However, when the electronic component region on the main surface of the semiconductor substrate is sealed using such a conventional sealing substrate, a large number of electronic component regions can be collectively sealed, for example, In the case of a sealing substrate using a semiconductor substrate as a material, wiring conductors cannot be formed three-dimensionally inside the semiconductor substrate. The wiring conductor cannot be led out from the main surface joined to the first semiconductor substrate in which the regions are arranged to the opposite main surface, and the electrodes of the electronic component are formed on the main surface of the first semiconductor substrate. It is necessary to extend a part of the formed electrode to the outside of the sealing portion, and to connect the extended portion to an electrode pad of an electronic component storage package or an external electric circuit via a bonding wire. (Electronic component area Up step) is long to connect to an external electric circuit to complete the electronic device from the sealing, also has a problem that the size of individual electronic devices increases. There is also a problem that surface mounting that is advantageous for downsizing an electronic system incorporating an electronic device cannot be performed.

  In the case of a sealing substrate made of a conductive metal plate or the like, it is once formed on the surface of the metal plate with glass or ceramic so that a conductor pattern such as an electrode pad can be formed on the metal plate. Since it is necessary to fill the pattern groove etc. to form an insulating part, or to form a conductor part on the surface of the insulating part in the middle of the mounting process, also in this case, shorten the mounting process of the electronic component. There was a problem that was difficult.

  Further, in recent years, electronic components formed with micro-electromechanical mechanisms (MEMS) have been driven at low voltage and increased in speed, and are easily affected by harmonic noise that enters from outside the electronic components. The high-frequency noise transmitted from the outside through the wiring conductor causes a change in electrical characteristics or destruction of the MEMS region. At the same time, harmonic noise contained in the signal propagating through the wiring conductor has become easy to be emitted to the outside of the electronic component. Therefore, if there is a noise source near the outside of the electronic component, the insulating substrate Electromagnetic noise enters the signal propagating through the deposited wiring conductor and propagates to the micro-electromechanical mechanism, causing malfunctions, or destroying the drive part of the electronic component, or external to the electronic component. If there is an electronic device or the like that is easily affected by electromagnetic noise at a nearby position, there is a problem that the electromagnetic noise emitted from the electronic component may adversely affect the electronic device or the like. In addition, in order to reduce the influence of high-frequency noise, techniques such as mounting a chip inductor near the MEMS or using a conductive pattern on a printed board are taken, resulting in an increase in mounting area. There was a problem.

  The present invention has been completed in view of the above-described problems in the prior art, and its purpose is to easily and reliably seal the microelectromechanical mechanism formed on the main surface of the semiconductor substrate, Electrodes formed on the main surface of the semiconductor substrate connected to the microelectromechanical mechanism can be easily and reliably externally connected in a form that can be surface-mounted, for example, and the electron that forms the microelectromechanical mechanism To provide an electronic component sealing substrate that is not easily affected by harmonic noise entering from the outside of the component, and at the same time, the harmonic noise contained in the signal propagating through the wiring conductor is not easily emitted to the outside of the electronic component. .

The electronic component sealing substrate according to the present invention is the electronic component having the semiconductor substrate, the microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and the electrode electrically connected to the microelectromechanical mechanism. An electronic component sealing substrate for hermetically sealing a microelectromechanical mechanism, wherein one main surface is bonded to the main surface of the semiconductor substrate, and the one of the insulating substrates A conductive frame-shaped sealing body which is provided on a main surface and surrounds the microelectromechanical mechanism and hermetically seals the micromechanical mechanism; and the electrode formed on the insulating substrate. A first wiring conductor that is electrically connected to the first wiring conductor, a second wiring conductor that is formed inside the insulating substrate and is electrically connected to the conductive frame-shaped sealing body, and the insulating substrate Formed inside and electrically connected to the first wiring conductor A third wiring conductor acting as an inductor, wherein the first wiring conductor has one end led out to the one main surface of the insulating substrate and the other end to the other main surface or side surface of the insulating substrate. One end of the second wiring conductor is led out to the one main surface of the insulating substrate and is electrically connected to the conductive frame-shaped sealing body, and the other end is connected to the second wiring conductor. It leads to the other main surface or side surface of the insulating substrate .

Preferably, the one end of the first wiring conductor is located inside the conductive frame-shaped sealing body. Preferably, the second wiring conductor has a through conductor formed inside the insulating substrate. Preferably, the insulating substrate is a laminated body formed by laminating a plurality of insulating layers, and the second wiring conductor has a through conductor penetrating the insulating layer. Preferably, at least a part of the second wiring conductor is arranged in parallel to the first wiring conductor.

Preferably, the insulating substrate is made of a glass ceramic sintered body. The electronic component sealing substrate is preferably formed on the one main surface of the insulating substrate and electrically connected to the one end of the first wiring conductor; And a connection terminal formed on the connection pad and electrically connected to the electrode. Preferably, when the electronic component sealing substrate is viewed in cross section, the conductive frame-shaped sealing body is positioned inward from an end portion of the insulating substrate.

The electronic device of the present invention includes an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism, and one main surface is the above-mentioned An insulating substrate bonded to the main surface of the semiconductor substrate and the one main surface of the insulating substrate, and surrounds the micro electro mechanical mechanism and hermetically seals the micro mechanical mechanism. A conductive frame-shaped sealing body, a first wiring conductor and a second wiring conductor formed inside the insulating substrate, and the first wiring conductor formed inside the insulating substrate. A third wiring conductor that acts as an inductor and is electrically connected. One end of the first wiring conductor is led out to the one main surface of the insulating substrate and electrically connected to the electrode. And the other end of the insulating substrate One end of the second wiring conductor is led out to the one main surface of the insulating substrate and is electrically connected to the conductive frame-shaped sealing body. The other end is led to the other main surface or side surface of the insulating substrate. Preferably, when the electronic device is viewed in cross section, the semiconductor substrate and the insulating substrate are aligned at both ends. Preferably, when the electronic device is viewed in cross section, the conductive frame-shaped sealing body is located inward from the cross section of the semiconductor substrate.

According to the electronic component sealing substrate of the present invention, an electronic component having a conductor substrate, a microelectromechanical mechanism formed on the main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism. An electronic component sealing substrate for hermetically sealing a microelectromechanical mechanism, wherein one main surface is bonded to the main surface of the semiconductor substrate, and the one main surface of the insulating substrate is provided on the main surface. A conductive frame-shaped encapsulant for hermetically sealing the micromechanical mechanism surrounding the electronic mechanical mechanism, a first wiring conductor formed inside the insulating substrate and electrically connected to the electrode, and an insulating substrate A second wiring conductor formed inside and electrically connected to the conductive frame-shaped sealing body, and an inductor formed inside the insulating substrate and electrically connected to the first wiring conductor A third wiring conductor, and the first wiring conductor is insulated at one end Leaded to one main surface of the plate, the other end led to the other main surface or side surface of the insulating substrate, and one end of the second wiring conductor was led to one main surface of the insulating substrate to form a conductive frame-shaped sealing body Since it is electrically connected and the other end is led out to the other main surface or side surface of the insulating substrate, the microelectromechanical mechanism of the electronic component can be easily and reliably formed by the conductive frame-shaped sealing body and the insulating substrate. Can be sealed.

Further, when the height of the main surface of the frame member is the same as the height of the connection terminal formed on the connection pad, when the main surface of the frame member is joined to the main surface of the semiconductor substrate, the semiconductor substrate The electrode formed on the main surface can be easily and reliably connected to the connection terminal. Moreover, the electrode of an electronic component can also be derived | led-out outside from this connection terminal via a connection pad and a wiring conductor.

  Furthermore, by forming a conductor pattern as an inductor in the insulating substrate, high-frequency noise that propagates through the conductor pattern and enters the MEMS can be effectively removed, and as a result, the reliability of the MEMS operation is improved. In addition, the mounting area for the external electronic circuit board on which the MEMS is mounted can be reduced.

  Further, the electronic component sealing substrate of the present invention is formed by using an insulating substrate such as a ceramic multilayer wiring substrate, for example, so that the wiring conductor is bonded to the connection pad or the frame member. From one main surface to the other main surface or side surface, it can be freely formed inside and on the surface of the substrate and led out, and by attaching metal bumps for external connection to this led end, etc. An electronic device that can be easily surface-mounted on an electric circuit board can be completed.

  In addition, in the electronic component sealing substrate of the present invention, when a large number of frame members having connection pads and connection terminals formed inside are arranged in the vertical and horizontal directions, a large number of electronic component regions are formed on the main surface of the semiconductor substrate. Even if they are arranged vertically and horizontally, they can be sealed together so that they can be externally connected together.

  In addition, according to the method for manufacturing an electronic device of the present invention, since each of the above steps is provided, connection for external connection of each electrode and a microelectronic machine are performed for a large number of electronic component regions arranged vertically and horizontally. Since the mechanism can be sealed at the same time, a large number of electronic devices composed of electronic components and electronic component sealing substrates bonded to each other can be manufactured easily and reliably.

  In addition, by dividing the electronic component and the electronic component sealing substrate bonded to each other into each electronic component sealing region, a large number of individual electronic devices formed by bonding the electronic component region to the electronic component sealing region can be simultaneously performed. Can be manufactured. At the time of the division, the micro electro mechanical mechanism in the electronic component region is sealed by the sealing substrate, so that the cutting powder of the semiconductor substrate such as silicon generated by the dicing process or the like adheres to the micro electro mechanical mechanism. There is no such thing, and the micro electromechanical mechanism can be reliably operated in the divided electronic device.

  Moreover, since the wiring conductor is led out to the other main surface or side surface of the insulating substrate, the electronic device obtained by dividing the surface can be obtained by simply attaching a terminal such as a metal bump to the lead end. The electronic device can be mounted on the external electric circuit board by mounting or the like, and the mounting process can be made extremely short and easy.

  The electronic component sealing substrate of the present invention and an electronic device manufacturing method using the same will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of an electronic component sealing substrate of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a frame member, and 5 is a connection terminal. The insulating substrate 1, the wiring conductor 2, the connection pad 3, the frame member 4 and the connection terminal 5 basically form an electronic component sealing substrate 6.

  The electronic component sealing substrate 6 is used to form a microelectromechanical mechanism 8 and an electrode 9 on the main surface (lower surface in the example of FIG. 1) of the semiconductor substrate 7 so as to be electrically connected to each other. By sealing the electronic component 10 formed, an electronic device is formed in which the microelectromechanical mechanism 8 is sealed in a state where it can be externally connected.

The microelectromechanical mechanism 8 according to the present embodiment includes, for example, an electric switch, an inductor, a capacitor, a resonator, an antenna, a microrelay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, a printhead, and an acceleration. It is an electronic device that has the functions of various sensors such as sensors and pressure sensors, display devices, etc., and is a part made by a so-called micromachining method based on semiconductor microfabrication technology, and has a size of about 10 μm to several hundred μm per element. Have

  The insulating substrate 1 functions as a lid for sealing the microelectromechanical mechanism 8 and also functions as a base for forming the wiring conductor 2, the connection pad 3, the frame member 4, and the connection terminal 5. The insulating substrate 1 includes ceramic materials such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, and a glass ceramic sintered body. It is formed of an organic resin material such as polyimide or glass epoxy resin, or a composite material formed by bonding inorganic powder such as ceramics or glass with an organic resin such as epoxy resin. For example, when the insulating substrate 1 is made of an aluminum oxide sintered body, a ceramic green sheet (hereinafter also referred to as a green sheet) formed by forming aluminum oxide and a raw material powder such as glass powder on the sheet is laminated and fired. It is formed by doing. The insulating substrate 1 is not limited to the one formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the application and the characteristics of the electronic component 10 to be hermetically sealed.

  For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 7 via the frame member 4 as will be described later, the reliability of bonding with the semiconductor substrate 7, that is, the sealing of the micro electro mechanical mechanism 8 is achieved. In order to increase the airtightness, the aluminum oxide-boron is made of a mullite sintered body, or the thermal expansion coefficient is approximated to that of the semiconductor substrate 7 by adjusting, for example, the kind and addition amount of the glass component. It is preferable to form with a material having a small difference in thermal expansion coefficient from the semiconductor substrate 7 such as a glass ceramic sintered body such as a silicate glass.

  Further, in the case of preventing the delay of the electrical signal transmitted by the wiring conductor 2, the insulating substrate 1 is made of an organic resin material such as polyimide or glass epoxy resin, or an inorganic powder such as ceramic or glass such as epoxy resin. It is preferable to form a composite material formed by bonding with an organic resin, or a material having a low relative dielectric constant, such as an aluminum oxide-borosilicate glass-based or lithium oxide-based glass ceramic sintered body.

  Further, the insulating substrate 1 has a large calorific value of the microelectromechanical mechanism 8 to be sealed, and in the case where the heat dissipating property is good, a heat such as an aluminum nitride sintered body is used. It is preferable to form with a material having high conductivity.

  In addition, a concave portion 1a may be formed on one main surface of the insulating substrate 1 so as to accommodate the microelectromechanical mechanism 8 of the electronic component 10 inside. If a part of the micro electro mechanical mechanism 8 is accommodated in the recess 1a, the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low, which is advantageous for reducing the height of the electronic device. It will be something.

  From one main surface of the insulating substrate 1 (main surface on the side where the micro electro mechanical mechanism 8 is sealed), the wiring conductor 2 is led out to the other main surface or side surface. Further, a connection pad 3 connected to the wiring conductor 2 is formed in a portion inside the frame member 4 on the one main surface side of the insulating substrate 1. The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 9 of the electronic component 10 through the connection terminal 5 formed on the connection pad 3, and this is connected to the other main surface or side surface of the insulating substrate 1. It has a function to derive.

  These wiring conductors 2 and connection pads 3 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, and manganese. As a means for forming the wiring conductor 2 and the connection pad 3, a means for depositing a metal as a thin film layer, such as a metallized layer forming method, a plating method, or a vapor deposition method, can be used. For example, in the case of a tungsten metallized layer, it is formed by printing a tungsten paste on a green sheet to be the insulating substrate 1 and firing it together with the green sheet.

  The connection terminal 5 is formed of a solder such as tin-silver, tin-silver-copper, a low melting point brazing material such as gold-tin brazing, a high melting point brazing material such as silver-germanium, or a conductive organic resin. Alternatively, it is formed of a metal material or the like that enables joining by a welding method such as seam welding or electron beam welding.

  By joining the connection terminal 5 to the electrode 9 of the electronic component 10, the electrode 9 of the electronic component 10 is connected to the other main surface or side surface of the insulating substrate 1 via the connection terminal 5, the connection pad 3 and the wiring conductor 2. Derived. And the electrode 9 of the electronic component 10 is electrically connected with an external electric circuit by joining this derived | led-out edge part to an external electric circuit via tin-lead solder etc. FIG.

  A frame member 4 is joined to one main surface of the insulating substrate 1 so as to surround the connection pad 3. The frame member 4 functions as a side wall for hermetically sealing the microelectromechanical mechanism 8 of the electronic component 10 inside thereof. By joining the main surface (upper surface in the example of FIG. 1) of the frame member 4 to the main surface (lower surface in the example of FIG. 1) of the electronic component 10, the micro electromechanical mechanism 8 is hermetically sealed inside the frame member 4. Stopped. In this case, the semiconductor substrate 7 serves as a bottom plate and the insulating substrate 1 serves as a lid.

  The frame member 4 is made of an iron-nickel alloy such as iron-nickel-cobalt alloy or iron-nickel alloy, a metal material such as oxygen-free copper, aluminum, stainless steel, copper-tungsten alloy, copper-molybdenum alloy, or aluminum oxide. It is made of an inorganic material such as a sintered material and a glass ceramic sintered material, or an organic resin material such as PTFE (polytetrafluoroethylene) and glass epoxy resin.

  Further, as a method of joining the main surface of the frame member 4 to the main surface of the semiconductor substrate 7 of the electronic component 10, solder such as tin-silver type, low melting point brazing material such as gold-tin brazing, silver-germanium type, etc. It is possible to use a bonding method such as a high melting point brazing material, a conductive organic resin, or a welding method such as seam welding or electron beam welding.

  Then, for the electronic component 10 in which the microelectromechanical mechanism 8 and the electrode 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7, the electrode 9 is joined to the connection terminal 5. By joining the surface to the main surface of the frame member 4, an electronic device in which the microelectromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside the frame member 4 is formed.

  A conductor pattern as the inductor 12 is formed in the insulating substrate. The inductor 12 has a high impedance with respect to a high-frequency signal, and even if high-frequency noise propagates from the outside during the driving of the MEMS, the high-frequency noise is selectively cut by the inductor 12 and the adverse effect on the MEMS can be reduced. .

  The conductor pattern as the inductor 12 is, for example, a shape pattern such as a spiral shape, a meander shape, or a U shape using a strip line, a microstrip line, a coplanar line, or the like. Further, the inductance of the inductor 12 is preferably about 0.5 nH to 100 nH. When the inductance is smaller than 0.5 nH, noise is not cut, and when the inductance is larger than 100 nH, it is disadvantageous from the viewpoint of miniaturization.

  The inductor 12 is formed in the same manner as the wiring conductor 2 and the connection pad 3, and the inductor 12 is electrically connected to the wiring conductor 2.

In the electronic device according to the present embodiment , the microelectromechanical mechanism 8 is electrically connected to the external electric circuit by connecting the lead-out portion of the wiring conductor 2 to the external electric circuit via the external terminal 11 such as a solder ball. The

  As shown in FIG. 1, a conductor layer 3a is formed of the same material as that of the connection pad 3 on the main surface of the insulating substrate 1 to which the frame member 4 is bonded, and the insulating substrate 1 is formed from the conductor layer 3a. A part of the wiring conductor 2 may be led out over the other main surface. The lead-out portion of the wiring conductor 2 led out from the conductor layer 3a can be connected to the grounding terminal of the external electric circuit or the like via the external terminal 11 or the like.

  In this case, in order to enable the bonding of the connection terminal 5 and the electrode 9 and the bonding of the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 to be performed reliably and easily in one step, the connection terminal The height of 5 and the height of the frame member 4 need to be the same height.

In addition, the electronic component sealing substrate 6 according to the present embodiment has a connection pad 3 and a frame member 4 as one main substrate of a large area as shown in a sectional view in FIG. It is preferable to use a so-called multi-cavity form in which the surfaces are arranged vertically and horizontally. In FIG. 2, the same parts as those in FIG.

  If such a large number is taken, usually, a multi-chip form in which a large number of microelectromechanical mechanisms 8 and electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7. A large number of electronic parts 10 manufactured in the above can be hermetically sealed at the same time, and the productivity can be improved.

  In addition, in this way, an electronic component 10 manufactured in a multi-cavity form in which a large number of microelectromechanical mechanisms 8 and electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7. Are collectively sealed, the semiconductor substrate 7 (and the electronic component sealing substrate 6) is subjected to a cutting process such as a dicing process and divided into individual electronic components 10 (electronic devices). Further, it is possible to effectively prevent the occurrence of a problem that cutting powder or the like generated along with the cutting adheres to the microelectromechanical mechanism 8 and interferes with its operation.

  Next, a method for manufacturing an electronic device using such an electronic component sealing substrate 6 will be described with reference to FIGS. FIG. 3 is a sectional view showing an example of an embodiment of an electronic device manufacturing method according to the present invention in the order of steps. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

  First, as shown in FIG. 3A, a large number of electronic component regions 10a each having a microelectromechanical mechanism 8 and electrodes 9 electrically connected to the main surface of a semiconductor substrate 7 are formed vertically and horizontally. A multi-piece electronic component 10b having an array formed is prepared.

  The semiconductor substrate 7 is made of a silicon substrate such as a single crystal or polycrystal. A silicon oxide layer is formed on the surface of the silicon substrate, and by applying a fine wiring processing technique such as photolithography, a micro electromechanical mechanism 8 such as a minute vibrating body and an electrode 9 made of a conductor such as a circular pattern are provided. A multi-piece electronic component 10b is formed by arranging a large number of the formed electronic component regions 10a. In this example, the microelectromechanical mechanism 8 and the electrode 9 are electrically connected via fine wiring (not shown) formed on the main surface of the semiconductor substrate 7, respectively.

  Next, as shown in FIG. 3B, the insulating substrate 1 on which the wiring conductor 2 led out from the one main surface to the other main surface or the side surface is formed, and the one main surface of the insulating substrate 1 is formed. A connection pad 3 electrically connected to the wiring conductor 2, a frame member 4 joined so as to surround the connection pad 3 on one main surface of the insulating substrate 1, and a frame member formed on the connection pad 3 A plurality of electronic component sealing substrates 6b are prepared in which electronic component sealing regions 6a composed of connection terminals 5 having the same height as 4 are arranged so as to correspond to the electronic component regions 10a of the multiple electronic components.

  Insulating substrate 1 on which wiring conductor 2 led out from one main surface to the other main surface or side surface is formed, for example, insulating substrate 1 is made of an aluminum oxide sintered body, and wiring conductor 2 is made of a metallized layer of tungsten. In some cases, raw powders such as aluminum oxide, silicon oxide, and calcium oxide are kneaded together with an organic resin binder to obtain a slurry, and this slurry is formed into a sheet shape by a doctor blade method, a lip coater method, or the like. Form a green sheet, fill and fill the surface of the green sheet and, if necessary, through the pre-formed through holes in the green sheet with tungsten metallized paste, and then stack these green sheets Then, it can be formed by firing.

  Of these green sheets, some of them are punched to form square-shaped openings, etc., which are arranged on the outermost layer on one main surface side, or from the outermost layer to the inside. A plurality of layers may be laminated so that the recesses 1a corresponding to the arrangement of the electronic component regions 10a may be formed on one main surface of the fired insulating substrate 1 in an array. If the concave portion 1a is formed in this manner, the micro electro mechanical mechanism 8 can be accommodated inside the concave portion 1a, so that the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low. This is advantageous for reducing the height of the electronic device.

  The connection pad 3 is usually made of the same material as that of the wiring conductor 2. For example, a tungsten paste is connected to the printed tungsten paste to be the wiring conductor 2 on the outermost surface of the green sheet to be the insulating substrate 1. In this manner, a large number are arranged in rows and columns and printed by screen printing or the like.

  Further, if the frame member 4 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form a frame shape. It is manufactured by doing.

  The frame member 4 and the insulating substrate 1 are joined by a solder such as a tin-silver solder, a low-melting solder such as gold-tin solder, a high-melting solder such as a silver-germanium, or a conductive organic resin. It can be carried out by a method of joining via a welding method or a welding method such as seam welding or electron beam welding.

  Connection terminals 5 are formed on the connection pads 3 so as to have the same height as the frame member 4. If the connection terminal 5 is made of, for example, tin-silver solder, the connection terminal 5 is formed by positioning the solder ball on the connection pad 3, heating and melting it.

  As a method of making the height of the connection terminal 5 the same as the height of the frame member 4, for example, when the tin-silver solder used as the connection terminal 5 is melted and formed on the connection pad 3, the upper surface thereof is changed. It is possible to use a method such as pressing with a ceramic jig or the like so as to be the same height as the frame member 4.

  Next, as shown in FIG. 3C, the electronic component 10b is superimposed on the electronic component sealing substrate 6b so that each electronic component region 10a and each electronic component sealing region 6a correspond to each other. In addition to bonding to the connection terminal 5, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 is bonded to the main surface of the frame member 4, and the micro electro mechanical mechanism 8 is hermetically sealed inside the frame member 4. .

  Here, when the electrode 9 and the connection terminal 5 are joined, for example, when the connection terminal 5 is made of tin-silver solder, the connection terminal 5 is aligned and placed on the electrode 9, and these are placed at about 250. For example, the heat treatment is performed in a reflow furnace at a temperature of about from ℃ to 300 ℃.

  In addition, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 and the main surface of the frame member 4 are joined, for example, with a tin-silver solder similar to the connection terminal 5 sandwiched between the joint surfaces. In addition, the heat treatment can be performed in the reflow furnace simultaneously with the joining of the electrode 9 and the connection terminal 5 described above.

  In this case, since the height of the connection terminal 5 is the same as the height of the frame member 4, the bonding between the electrode 9 and the connection terminal 5 and the bonding between the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 are performed. Can be easily and reliably performed simultaneously.

As described above, according to the method for manufacturing the electronic device according to the present embodiment, the bonding for leading out the electrode 9 in the electronic component region 10a and the bonding for hermetic sealing of the microelectromechanical mechanism 8 are performed simultaneously. Since it can be performed, it is possible to reliably reduce at least one step of joining such as soldering (brazing), which takes about several hours, as compared with the conventional manufacturing method. Can be increased.

  Then, as shown in FIG. 3D, the electronic component 10b and the electronic component sealing substrate 6b joined together are divided into the electronic component sealing regions 6a, and the electronic component sealing is performed. Individual electronic devices are obtained in which the electronic component sealing substrate 6 in which the region 6a is divided is joined to the electronic component 10 in which the electronic component region 10a is divided.

  Cutting the joined body of the electronic component 10b and the electronic component sealing substrate 6b, which are joined together, in a multi-cavity form, can be performed by subjecting the joined body to a cutting process such as dicing. it can.

In the manufacturing method of the electronic device according to the present embodiment , each microelectromechanical mechanism 8 is formed by the frame member 4, the semiconductor substrate 7, and the insulating substrate 1 inside the frame member 4 during the cutting process such as dicing. Since it is hermetically sealed, cutting powder such as silicon or ceramics generated by cutting the semiconductor substrate 7 or the insulating substrate 1 does not adhere to the microelectromechanical mechanism 8, and in the completed electronic device, The microelectromechanical mechanism 8 can be reliably operated normally.

As described above, according to the manufacturing method of the electronic device according to the present embodiment, when the electronic component region 10a in which a large number are arranged in the main surface of the semiconductor substrate 7 in the vertical and horizontal directions is cut as in the prior art, the microelectronic machine is cut. It is not necessary to separately add a process for protecting the mechanism 8 by covering it with a glass plate or the like, and the process only for protecting the micro-electromechanical mechanism 8 can be reliably deleted. It can be very expensive.

  Further, the electronic device manufactured in this way is already hermetically sealed, and the electrode 9 is in a state of being led out to the outside through the wiring conductor 2, so that this is separately mounted in a package. There is no need to add such a process, and it is possible to mount and use it on an external electric circuit board simply by connecting the portion from which the wiring conductor 2 is led to an external electric circuit via an external terminal 11 such as a solder ball. it can.

  Further, since the wiring conductor 2 is led out to the other main surface or side surface of the insulating base 1, it can be connected to the external electric circuit in the form of surface mounting, can be mounted at a high density, and the external electric circuit board. Can be effectively downsized.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present invention. For example, in the example of the above-described embodiment, one microelectromechanical mechanism is hermetically sealed in one electronic device, but a plurality of microelectromechanical mechanisms may be hermetically sealed in one electronic device. In the example of FIG. 1, the wiring conductor 2 is led out to the other main surface side of the insulating substrate 1, but it may be led out to the side surface or to both the side surface and the other main surface. Further, the electrical connection of the portion where the wiring conductor 2 is led out to the external electric circuit is not limited to being made via a solder ball as an external terminal, but may be made via a lead terminal or a conductive adhesive. Good.

  The inductor 12 is not only used for reducing high-frequency noise, but may also be used for impedance matching and phase adjustment.

It is sectional drawing which shows an example of embodiment of the board | substrate for electronic component sealing of this invention. It is sectional drawing which shows the other example of embodiment of the board | substrate for electronic component sealing of this invention. (A)-(d) is sectional drawing which showed an example of embodiment of the manufacturing method of the electronic device of this invention in order of the process, respectively. It is sectional drawing which shows an example of the electronic device using the conventional board | substrate for electronic component sealing.

Explanation of symbols

1: insulating substrate 2: wiring conductor 3: connection pad 4: frame member 5: connection terminal 6: electronic component sealing substrate 6a: electronic component sealing region 6b: electronic component sealing substrate 7: semiconductor substrate 8: minute Electronic mechanical mechanism 9: Electrode 10: Electronic component 10a: Electronic component region 10b: Electronic component 12: Inductor

Claims (11)

Electrons for hermetically sealing the microelectromechanical mechanism of an electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism A component sealing substrate,
On the other hand, an insulating substrate whose main surface is bonded to the main surface of the semiconductor substrate;
A conductive frame-shaped sealing body that is provided on the one main surface of the insulating substrate and surrounds the microelectromechanical mechanism to hermetically seal the micromechanical mechanism;
A first wiring conductor formed inside the insulating substrate and electrically connected to the electrode;
A second wiring conductor formed inside the insulating substrate and electrically connected to the conductive frame-shaped sealing body;
A third wiring conductor acting as an inductor, formed inside the insulating substrate and electrically connected to the first wiring conductor;
One end of the first wiring conductor is led out to the one main surface of the insulating substrate, and the other end is led to the other main surface or side surface of the insulating substrate,
One end of the second wiring conductor is led out to the one main surface of the insulating substrate and is electrically connected to the conductive frame-shaped sealing body, and the other end is the other main surface or side surface of the insulating substrate. An electronic component sealing substrate characterized by being derived from the above.   2. The electronic component sealing substrate according to claim 1, wherein the one end of the first wiring conductor is positioned inside the conductive frame-shaped sealing body.   The electronic component sealing substrate according to claim 1, wherein the second wiring conductor has a through conductor formed inside the insulating substrate. The insulating substrate is a laminate formed by laminating a plurality of insulating layers,
3. The electronic component sealing substrate according to claim 1, wherein the second wiring conductor has a through conductor penetrating the insulating layer. 4. The second wiring conductor, an electronic component sealing substrate according to any one of claims 1 to 4, characterized in that disposed in parallel to at least part of the first wiring conductor. The insulating substrate, the electronic component sealing substrate according to any one of claims 1 to 5, characterized in that it consists of a glass ceramic sintered body. A connection pad formed on the one main surface of the insulating substrate and electrically connected to the one end of the first wiring conductor;
The connection is formed on the pad, an electronic component sealing substrate according to any one of claims 1 to 6, characterized in that it comprises a connection terminal connected to said electrode and electrically. When viewed in cross section, the conductive frame-like sealing body, as claimed in any one of claims 1 to 7, characterized in that it is located inwardly from the end portion of the insulating substrate Electronic component sealing substrate. An electronic component having a semiconductor substrate, a microelectromechanical mechanism formed on a main surface of the semiconductor substrate, and an electrode electrically connected to the microelectromechanical mechanism;
On the other hand, an insulating substrate whose main surface is bonded to the main surface of the semiconductor substrate;
A conductive frame-shaped sealing body that is provided on the one main surface of the insulating substrate and surrounds the microelectromechanical mechanism to hermetically seal the micromechanical mechanism;
A first wiring conductor and a second wiring conductor formed inside the insulating substrate;
A third wiring conductor acting as an inductor, formed inside the insulating substrate and electrically connected to the first wiring conductor;
The first wiring conductor has one end led out to the one main surface of the insulating substrate and electrically connected to the electrode, and the other end led to the other main surface or side surface of the insulating substrate,
One end of the second wiring conductor is led out to the one main surface of the insulating substrate and is electrically connected to the conductive frame-shaped sealing body, and the other end is the other main surface or side surface of the insulating substrate. An electronic device characterized in that the electronic device is derived.   The electronic device according to claim 9, wherein both ends of the semiconductor substrate and the insulating substrate are aligned when viewed in cross section.   11. The electronic device according to claim 9, wherein the conductive frame-shaped sealing body is positioned inward from a cross section of the semiconductor substrate when viewed in cross section.

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