JP3920910B2 - Nitride-based semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a nitride semiconductor device and a method for manufacturing the same, and more particularly to a nitride semiconductor device having an electrode and a method for manufacturing the same.

  In recent years, nitride-based semiconductor laser devices are expected to be used as light sources for next-generation large-capacity optical disks, and their development is actively performed.

  Usually, when forming a nitride semiconductor laser element, an insulating sapphire substrate is used. However, when a nitride based semiconductor layer is formed on a sapphire substrate, the difference in lattice constant between the sapphire substrate and the nitride based semiconductor layer is large. Inconveniently, crystal defects (dislocations) occur. As a result, there has been a problem that the characteristics of the nitride-based semiconductor laser device are deteriorated.

  Thus, conventionally, a nitride semiconductor laser element using a nitride semiconductor substrate such as a GaN substrate having a small difference in lattice constant from the nitride semiconductor layer has been proposed.

  FIG. 7 is a cross-sectional view showing a conventional nitride-based semiconductor laser device formed using an n-type GaN substrate. Referring to FIG. 7, in the conventional nitride semiconductor laser device manufacturing process, the nitride semiconductor layer (102 to 110) grown on n-type GaN substrate 101 is improved in crystallinity. The system semiconductor layers (102 to 110) are grown on the Ga face ((HKLM) face: M is a positive integer) of the n-type GaN substrate 1 having a wurtzite structure. The nitrogen surface ((HKL-M) surface: M is a positive integer) of the n-type GaN substrate 101 having a wurtzite structure is used as the back surface, and an n-side electrode is formed on the back surface of the n-type GaN substrate 101. 112 is formed. Hereinafter, a manufacturing process of a conventional nitride semiconductor laser device will be described in detail.

As shown in FIG. 7, MOCVD (Metal Organic Chemical Vapor Deposition) or the like is used on the upper surface (Ga surface) of an n-type GaN substrate 101 having a thickness of about 300 μm to about 500 μm. An n-type layer 102 made of n-type GaN having a thickness of about 3 μm, an n-type buffer layer 103 made of n-type In _0.05 Ga _0.95 N having a thickness of about 100 nm, and an n-type Al having a thickness of about 400 nm. _An n-type cladding layer 104 made of _0.05 Ga _0.95 N, an n-type light guide layer 105 made of n-type GaN having a thickness of about 70 nm, and an MQW active layer 106 having an MQW (Multiple Quantum Well) structure; P-type layer 1 made of p-type Al _0.2 Ga _0.8 N having a thickness of about 200 nm 07, a p-type light guide layer 108 made of p-type GaN having a thickness of about 70 nm, a p-type cladding layer 109 made of p-type Al _0.05 Ga _0.95 N having a thickness of about 400 nm, and a thickness of about 100 nm. A p-type contact layer 110 made of p-type GaN is sequentially formed.

  Next, the p-side electrode 111 is formed in a predetermined region on the upper surface of the p-type contact layer 110. Then, after polishing the back surface of the n-type GaN substrate 101 until the n-type GaN substrate 101 has a predetermined thickness (about 100 μm), the n-side electrode 112 is formed on the back surface (nitrogen surface) of the n-type GaN substrate 101. To do. Finally, the n-type GaN substrate 101 and each of the layers 102 to 110 are cleaved to perform element isolation and resonator end face formation. Thereby, the conventional nitride-based semiconductor laser device shown in FIG. 7 is completed.

In the conventional nitride semiconductor laser device shown in FIG. 7, since the hardness of the n-type GaN substrate 101 is very high, it is difficult to perform element isolation and formation of the resonator end face by cleavage. is there. In order to cope with such inconvenience, the back surface of the n-type GaN substrate is mechanically polished before the cleaving step to reduce the size of the unevenness on the back surface of the n-type GaN substrate, thereby separating the elements and the resonator end faces. There has been proposed a method for performing good formation (see, for example, Patent Document 1).
JP 2002-26438 A

  However, in the conventional method disclosed in Patent Document 1, stress is applied to the vicinity of the back surface of the n-type GaN substrate when the back surface of the n-type GaN substrate is mechanically polished. For this reason, there is a disadvantage that fine crystal defects such as cracks are generated in the vicinity of the back surface of the n-type GaN substrate. As a result, there is a problem that the contact resistance between the n-type GaN substrate and the n-side electrode formed on the back surface (nitrogen surface) of the n-type GaN substrate increases.

  In addition, since the nitrogen surface of the n-type GaN substrate is easily oxidized, this also increases the contact resistance with the n-side electrode formed on the back surface (nitrogen surface) of the n-type GaN substrate. It was.

  The present invention has been made to solve the above problems, and one object of the present invention is to reduce the contact resistance between a nitrogen surface of a nitride-based semiconductor substrate or the like and an electrode. It is to provide a method for manufacturing a nitride semiconductor device.

  Another object of the present invention is to reduce crystal defects in the vicinity of a nitrogen surface of a nitride semiconductor substrate or the like in the method for manufacturing a nitride semiconductor device.

  Still another object of the present invention is to provide a nitride semiconductor device capable of reducing the contact resistance between a nitrogen surface such as a nitride semiconductor substrate and an electrode.

  In order to achieve the above object, a method for manufacturing a nitride semiconductor device according to the first aspect of the present invention comprises either an n-type nitride semiconductor layer having a wurtzite structure or a nitride semiconductor substrate. A step of etching the back surface of the first semiconductor layer, and a step of forming an n-side electrode on the back surface of the etched first semiconductor layer.

  In the method for manufacturing a nitride semiconductor device according to the first aspect, as described above, the first semiconductor layer made of any one of the n-type nitride semiconductor layer and the nitride semiconductor substrate having a wurtzite structure is used. By etching the back surface, it is possible to remove a region including crystal defects in the vicinity of the back surface of the first semiconductor layer generated due to a polishing process or the like, so that crystal defects in the vicinity of the back surface of the first semiconductor layer are reduced. can do. As a result, it is possible to suppress a decrease in the electron carrier concentration due to trapping of electron carriers due to crystal defects, etc., so that the electron carrier concentration on the back surface of the first semiconductor layer can be increased. As a result, the contact resistance between the first semiconductor layer and the n-side electrode can be reduced. Further, by etching the back surface of the first semiconductor layer, the flatness of the back surface of the first semiconductor layer can be improved as compared with the case of mechanical polishing. Thereby, since the flatness of the n-side electrode formed on the back surface of the first semiconductor layer can be improved, in the case of a structure in which the n-side electrode is attached to the heat dissipation base, the n-side electrode and the heat dissipation base Adhesiveness can be improved. As a result, good heat dissipation characteristics can be obtained. In addition, since the flatness of the n-side electrode formed on the back surface of the first semiconductor layer can be improved, in the case of a structure in which wire bonding is performed on the n-side electrode, bonding characteristics of wire bonding to the n-side electrode Can be improved.

  In the method for manufacturing a nitride semiconductor device according to the first aspect, preferably, the back surface of the first semiconductor layer includes a nitrogen surface of the first semiconductor layer. Here, the nitrogen surface is a wide concept including not only the case where all of the surfaces are nitrogen surfaces but also the case where the nitrogen surfaces are main surfaces. Specifically, a surface having a nitrogen surface of 50% or more is included in the nitrogen surface of the present invention. Thus, when the back surface of the first semiconductor layer is a nitrogen surface, the back surface is easily oxidized, so that the oxidized portion of the back surface can be removed by etching. Thereby, the contact resistance between the first semiconductor layer and the n-side electrode can be further reduced.

  In the method for manufacturing a nitride semiconductor device according to the first aspect, preferably, the etching step includes a step of etching the back surface of the first semiconductor layer by reactive etching. With this configuration, the flatness of the back surface of the first semiconductor layer can be easily improved by reactive etching, and crystal defects near the back surface can be reduced. The reactive etching of the present invention has almost the same meaning as dry etching.

In the method of manufacturing a nitride semiconductor device including the step of etching by reactive etching, preferably, the step of etching by reactive etching is a step of etching by reactive etching using Cl ₂ gas and BCl ₃ gas. including. With this configuration, the flatness of the back surface of the first semiconductor layer can be easily improved, and crystal defects near the back surface can be reduced. In this case, the flow rate ratio of BCl ₃ gas to Cl ₂ gas in the step of etching by reactive etching is preferably 30% or more and 70% or less. Since the range of the flow rate ratio of the BCl ₃ gas to the Cl ₂ gas is a range in which the flatness of the back surface of the first semiconductor layer can be improved by experiments, if the flow rate ratio in this range is used, The flatness of the back surface of the first semiconductor layer can be surely improved.

  In the method for manufacturing a nitride-based semiconductor element according to the first aspect, preferably, prior to the step of forming the n-side electrode, the nitrogen surface of the etched first semiconductor layer is formed with chlorine, fluorine, bromine, iodine, The method further includes the step of immersing in a solution containing at least one of sulfur and ammonium. If comprised in this way, the residue by the etching of the nitrogen surface of a 1st semiconductor layer can be removed easily. Thereby, the contact resistance between the first semiconductor layer and the n-side electrode can be further reduced. In this case, prior to the step of forming the n-side electrode, the method further includes a step of treating the back surface of the first semiconductor layer with hydrochloric acid with an HCl solution. If comprised in this way, the chlorine-type residue adhering to the back surface can be easily removed by the etching of the back surface of a 1st semiconductor layer.

  The method for manufacturing a nitride semiconductor device according to the first aspect preferably further includes a step of polishing the back surface of the first semiconductor layer prior to the etching step. Thus, even when the back surface of the first semiconductor layer is polished, the flatness of the back surface of the first semiconductor layer can be improved by the etching process after polishing, and the vicinity of the back surface generated due to the polishing can be improved. Crystal defects can be reduced.

In the method for manufacturing a nitride semiconductor device according to the first aspect, preferably, the etching step includes a step of etching the back surface of the first semiconductor layer by wet etching. If comprised in this way, while the flatness of the back surface of a 1st semiconductor layer can be improved easily by wet etching, the crystal defect of the back surface vicinity can be reduced. In this case, the step of etching by wet etching preferably includes a step of etching using at least one etchant selected from the group consisting of aqua regia, KOH and K ₂ S ₂ O ₈ . The step of etching by wet etching preferably includes a step of etching in a state where the temperature is raised to about 120 ° C. If comprised in this way, about 10 times as many etching rates as the case where wet etching is performed at room temperature can be obtained.

  According to a second aspect of the present invention, there is provided a method for manufacturing a nitride-based semiconductor device comprising: forming a nitrogen surface of a first semiconductor layer made of any one of an n-type nitride-based semiconductor layer and a nitride-based semiconductor substrate having a wurtzite structure. , A step of etching by reactive etching, and a step of forming an n-side electrode on the nitrogen surface of the etched first semiconductor layer.

  In the method for manufacturing a nitride semiconductor device according to the second aspect, as described above, the first semiconductor layer made of any one of the n-type nitride semiconductor layer having a wurtzite structure and the nitride semiconductor substrate is used. By etching the nitrogen surface by reactive etching, a region including crystal defects in the vicinity of the nitrogen surface of the first semiconductor layer generated due to a polishing process or the like can be removed, so that the nitrogen of the first semiconductor layer can be removed. Crystal defects near the surface can be reduced. As a result, it is possible to suppress a decrease in the electron carrier concentration due to trapping of electron carriers due to crystal defects, etc., so that the electron carrier concentration on the nitrogen surface of the first semiconductor layer can be increased. As a result, the contact resistance between the first semiconductor layer and the n-side electrode can be reduced. Further, by etching the nitrogen surface of the first semiconductor layer by reactive etching, the flatness of the nitrogen surface of the first semiconductor layer can be improved as compared with the case of mechanical polishing. Thereby, since the flatness of the n-side electrode formed on the nitrogen surface of the first semiconductor layer can be improved, in the case of a structure in which the n-side electrode is attached to the heat dissipation base, the n-side electrode and the heat dissipation base Adhesion with the table can be improved. As a result, good heat dissipation characteristics can be obtained. In addition, since the flatness of the n-side electrode formed on the nitrogen surface of the first semiconductor layer can be improved, in the case of a structure in which wire bonding is performed on the n-side electrode, bonding of wire bonding to the n-side electrode is performed. Characteristics can be improved.

A nitride semiconductor device according to a third aspect of the present invention includes a first semiconductor layer made of any one of an n-type nitride semiconductor layer and a nitride semiconductor substrate having a wurtzite structure, and a first semiconductor layer comprising: An n-side electrode formed on the back surface, and a contact resistance between the n-side electrode and the first semiconductor layer is 0.05 Ωcm ² or less.

In the nitride-based semiconductor element according to the third aspect, the contact resistance between the n-side electrode and the first semiconductor layer is reduced to 0.05 Ωcm ² or less by reducing the contact resistance between the n-side electrode and the first semiconductor layer to 0.05 Ωcm ² or less. A nitride-based semiconductor device having reduced reduced device characteristics can be obtained.

In the nitride semiconductor device according to the third aspect, the electron carrier concentration in the vicinity of the interface between the first semiconductor layer and the n-side electrode is preferably 1 × 10 ¹⁷ cm ⁻³ or more. If comprised in this way, the nitride-type semiconductor element with which the contact resistance of an n side electrode and a 1st semiconductor layer was reduced can be obtained easily.

In the nitride semiconductor device according to the third aspect, the dislocation density in the vicinity of the interface between the first semiconductor layer and the n-side electrode is preferably 1 × 10 ⁹ cm ⁻² or less. With this configuration, crystal defects (dislocations) in the vicinity of the interface between the first semiconductor layer and the n-side electrode can be reduced, so that the contact resistance at the interface between the first semiconductor layer and the n-side electrode is reduced. be able to.

  In the nitride semiconductor device according to the third aspect, preferably, the back surface of the first semiconductor layer includes a nitrogen surface of the first semiconductor layer.

  In the method for manufacturing a nitride semiconductor device including the step of etching by reactive etching, the etching depth and the etching time in the step of etching by reactive etching are preferably in a proportional relationship. With this configuration, the etching depth can be accurately controlled by adjusting the etching time.

  In the method for manufacturing a nitride semiconductor device according to the first aspect, preferably, the etching step includes a step of making the back surface of the first semiconductor layer a mirror surface by etching the back surface of the first semiconductor layer. With this configuration, better flatness of the back surface of the first semiconductor layer can be obtained.

  The method for manufacturing a nitride semiconductor device according to the first aspect preferably further includes a step of performing a heat treatment after the step of forming the n-side electrode. With this configuration, the contact resistance between the first semiconductor layer and the n-side electrode can be further reduced.

  In the method for manufacturing a nitride semiconductor device according to the first aspect, preferably, the etching step includes a step of etching the back surface of the first semiconductor layer by a thickness of about 1 μm or more. According to this structure, the region including the crystal defect near the back surface of the first semiconductor layer generated due to the polishing process or the like can be sufficiently removed, so that the crystal defect near the back surface of the first semiconductor layer can be removed. It can be further reduced.

  In the method for manufacturing a nitride semiconductor device according to the first aspect, the first semiconductor layer is an n-type nitride made of at least one material selected from the group consisting of GaN, BN, AlN, InN, and TlN. A semiconductor layer and a nitride-based semiconductor substrate may be included. The n-side electrode may include an Al film.

  In the method for manufacturing a nitride semiconductor device according to the first aspect, the nitride semiconductor device is preferably a nitride semiconductor light emitting device. With this configuration, in the nitride-based semiconductor light-emitting device, the contact resistance between the first semiconductor layer and the n-side electrode can be reduced, and thus a nitride-based semiconductor light-emitting device having good light-emitting characteristics can be obtained. Can do.

  In the nitride semiconductor device according to the third aspect, the first semiconductor layer includes an n-type nitride semiconductor layer made of at least one material selected from the group consisting of GaN, BN, AlN, InN, and TlN; and A nitride semiconductor substrate may be included. The n-side electrode may include an Al film.

  In the nitride semiconductor device according to the third aspect, preferably, the nitride semiconductor device is a nitride semiconductor light emitting device. With this configuration, in the nitride-based semiconductor light-emitting device, the contact resistance between the first semiconductor layer and the n-side electrode can be reduced, and thus a nitride-based semiconductor light-emitting device having good light-emitting characteristics can be obtained. Can do.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the nitride-type semiconductor element which can reduce the contact resistance of nitrogen surfaces, such as a nitride-type semiconductor substrate, and an electrode can be provided.

  In addition, according to the present invention, crystal defects in the vicinity of the nitrogen surface of a nitride semiconductor substrate or the like can be reduced in the method for manufacturing a nitride semiconductor element.

  Furthermore, according to the present invention, it is possible to provide a nitride semiconductor device capable of reducing the contact resistance between a nitrogen surface of a nitride semiconductor substrate or the like and an electrode.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments embodying the present invention will be described below with reference to the drawings.

  1 to 5 are a cross-sectional view and a perspective view for explaining a manufacturing process of a nitride-based semiconductor laser device according to an embodiment of the present invention.

With reference to FIGS. 1-5, the manufacturing process of the nitride-type semiconductor laser element by one Embodiment of this invention is demonstrated. First, in this embodiment, for example, the oxygen-doped n-type GaN substrate 1 having a wurtzite structure is formed by the method disclosed in Japanese Patent Application Laid-Open No. 2000-44400. Specifically, an oxygen-doped n-type GaN layer is formed with a thickness of about 120 μm to about 400 μm on a GaAs substrate (not shown) using HVPE. Thereafter, the n-type GaN substrate 1 as shown in FIG. 1 is obtained by removing the GaAs substrate. The substrate carrier concentration of the n-type GaN substrate 1 measured by the Hall effect is 5 × 10 ¹⁸ cm ⁻³ . The impurity concentration of the n-type GaN substrate 1 according to SIMS (Secondary Ion Mass Spectroscopy) analysis is 1 × 10 ¹⁹ cm ⁻³ . The n-type GaN substrate 1 is an example of the “first semiconductor layer” in the present invention.

Then, an n-type having a thickness of about 5 μm on the upper surface (Ga surface), which is the (0001) surface of the n-type GaN substrate 1, using a normal pressure MOCVD method under a pressure of about 1 atm (about 100 kPa). N-type buffer layer 2 made of GaN, n-type cladding layer 3 made of n-type Al _0.08 Ga _0.92 N having a thickness of about 1 μm, MQW active layer 4 made of InGaN, and p having a thickness of about 0.28 μm A p-type cladding layer 5 made of type Al _0.08 Ga _0.92 N and a p-type contact layer 6 made of p-type GaN having a thickness of about 70 nm are sequentially formed.

The MQW active layer 4 is formed by alternately laminating four barrier layers made of GaN having a thickness of about 20 nm and three well layers made of In _0.15 Ga _0.85 N having a thickness of about 3.5 nm. Form. Further, Ga (CH ₃ ) ₃ , In (CH ₃ ) ₃ , Al (CH ₃ ) ₃ , and NH ₃ are used as source gases, and H ₂ and N ₂ are used as carrier gases. . In this embodiment, the composition of each layer 2-6 is adjusted by changing the supply amount of these source gases. Further, SiH ₄ gas (Si) is used as the n-type dopant for the n-type buffer layer 2 and the n-type cladding layer 3. Cp ₂ Mg gas (Mg) is used as a p-type dopant for the p-type cladding layer 5 and the p-type contact layer 6.

  Next, a partial region of the p-type contact layer 6 and the p-type cladding layer 5 is etched using a photolithography technique and an etching technique. As a result, as shown in FIG. 2, a convex portion (ridge portion) having a width of about 2 μm composed of the convex portion of the p-type cladding layer 5 and the p-type contact layer 6 is formed. Next, a Pt film having a thickness of about 1 nm, a Pd film having a thickness of about 10 nm, and a Ni film having a thickness of about 300 nm are formed on the upper surface of the p-type contact layer 6 from bottom to top. A p-side electrode 7 is formed. Thereby, a nitride-based semiconductor laser device structure 20 including a region where a plurality of devices are formed as shown in FIG. 2 is formed.

  Thereafter, as shown in FIGS. 3 and 4, the back surface (nitrogen surface) which is the (000-1) surface of the n-type GaN substrate 1 is mechanically polished. As shown in FIG. 3, a mechanical polishing apparatus 30 used in this polishing step includes a glass substrate 11 having a flat surface, a holder 12 that can be moved up and down, and supported so as to be rotatable in the R direction, 13. On the buff 13, an abrasive (not shown) made of diamond, silicon oxide or alumina having a particle roughness of about 0.2 μm to about 1 μm is disposed. If the particle roughness of this abrasive is in the range of about 0.2 μm to about 0.5 μm, the back surface polishing can be performed particularly well. Further, as shown in FIGS. 3 and 4, the nitride-based semiconductor laser device structure 20 is attached to the lower surface of the holder 12 by a wax 14 at an interval so as not to directly contact the holder 12. ing. This prevents the nitride-based semiconductor laser device structure 20 from being damaged during mechanical polishing. Instead of the glass substrate 11 or the like, a flat polishing disk made of metal or the like may be used.

  Using the mechanical polishing apparatus 30 shown in FIG. 3, the back surface (nitrogen surface) of the n-type GaN substrate 1 is polished until the thickness of the n-type GaN substrate 1 becomes about 120 μm to about 180 μm. Specifically, the back surface (see FIG. 4) of the n-type GaN substrate 1 of the nitride-based semiconductor laser device structure 20 attached to the lower surface of the holder 12 is fixed on the upper surface of the buff 13 on which the abrasive is disposed. Press with a load of. Then, the holder 12 is rotated in the R direction while flowing water or oil through the buff 13 (see FIG. 3). In this way, mechanical polishing is performed until the thickness of the n-type GaN substrate 1 becomes about 120 μm to about 180 μm. The reason why the thickness of the n-type GaN substrate 1 is processed in the range of about 120 μm to about 180 μm is that the cleavage step described later can be performed satisfactorily within the thickness range.

Thereafter, in this embodiment, the back surface (nitrogen surface) of the n-type GaN substrate 1 is etched for about 20 minutes by reactive ion etching (RIE). This etching was performed under the conditions of gas flow rate, Cl ₂ gas: 10 sccm, BCl ₃ gas: 5 sccm, etching pressure: about 3.3 Pa, RF power: 200 W (0.63 W / cm ² ), etching temperature: room temperature. . Thereby, the back surface (nitrogen surface) of the n-type GaN substrate 1 is removed by a thickness of about 1 μm. As a result, the region in the vicinity of the back surface of the n-type GaN substrate 1 including crystal defects generated due to the mechanical polishing can be removed. In addition, the back surface of the n-type GaN substrate 1 can be made a flatter mirror surface as compared with a case where the back surface is processed only by mechanical polishing. In addition, let the surface state which can confirm the reflected image of the back surface of the n-type GaN board | substrate 1 visually visually be a mirror surface.

Here, in order to confirm the effect of the above-described etching, the crystal defect (dislocation) density on the back surface of the n-type GaN substrate 1 before and after the etching was measured by TEM (Transmission Electron Microscope) analysis. As a result, the crystal defect density was 1 × 10 ¹⁰ cm ⁻² or more before etching, whereas the crystal defect density decreased to 1 × 10 ⁶ cm ⁻² or less after etching. Turned out to be. In addition, the electron carrier concentration in the vicinity of the back surface of the n-type GaN substrate 1 after etching was measured with an electrochemical CV measurement concentration profiler. As a result, the electron carrier concentration in the vicinity of the back surface of the n-type GaN substrate 1 was 1.0 × 10 ¹⁸ cm ⁻³ or more. As a result, it was found that the electron carrier concentration in the vicinity of the back surface can be made comparable to the substrate carrier concentration (5 × 10 ¹⁸ cm ⁻³ ) of the n-type GaN substrate 1 by etching by the RIE method.

Further, under the above etching conditions, the etching time and the etching depth are in a proportional relationship. Therefore, the etching depth can be accurately controlled by adjusting the etching time. Further, the etching rate and the surface state change depending on the composition of the etching gas. FIG. 6 is a graph showing changes in the etching rate when the etching gas of the RIE method is changed. In this case, the Cl ₂ gas flow rate was fixed at 10 sccm, and the etching rate when the BCl ₃ gas flow rate was changed was measured. As a result, as shown in FIG. 6, when the flow ratio of BCl ₃ gas to Cl ₂ gas is in the range of 30% to 70%, the etched surface becomes a flat mirror surface. When the flow rate ratio of BCl ₃ gas to Cl ₂ gas was less than 5% or more than 85%, the flatness of the etched surface was impaired and the surface became cloudy.

  After performing the etching process as described above, the nitride-based semiconductor laser device structure 20 is immersed in a room temperature HCl solution (concentration 10%) for 1 minute to perform hydrochloric acid treatment. Thereby, at the time of etching by the RIE method, chlorine-based residues attached to the back surface of the n-type GaN substrate 1 are removed.

  Thereafter, using a sputtering method, a vacuum deposition method, or the like, on the back surface (nitrogen surface) of the n-type GaN substrate 1 of the nitride-based semiconductor laser device structure 20, in order from the side closer to the back surface of the n-type GaN substrate 1, An n-side electrode 8 composed of an Al film having a thickness of 6 nm, a Si film having a thickness of 2 nm, a Ni film having a thickness of 10 nm, and an Au film having a thickness of 300 nm is formed.

  Finally, the nitride semiconductor laser device according to the present embodiment as shown in FIG. 5 is completed by cleaving the element and forming the cavity end face.

In the manufacturing process of the nitride-based semiconductor laser device according to the present embodiment, as described above, the back surface (nitrogen surface) of the n-type GaN substrate 1 is etched by the RIE method, thereby generating n generated due to the polishing process. A region including crystal defects in the vicinity of the back surface of the type GaN substrate 1 can be removed. Thereby, the fall of the electron carrier concentration resulting from the trap of the electron carrier by a crystal defect, etc. can be suppressed. Further, when the back surface of the n-type GaN substrate 1 is a nitrogen surface, the back surface of the n-type GaN substrate 1 is easily oxidized, so that the oxidized portion can be removed by etching. As a result, the contact resistance between the n-type GaN substrate 1 and the n-side electrode 8 can be reduced. When the contact resistance between the n-type GaN substrate 1 and the n-side electrode 8 in the nitride-based semiconductor laser device manufactured according to the present embodiment was measured by the TLM method (Transmission Line Model), the contact resistance was 2 0.0 × 10 ⁻⁴ Ωcm ² or less. In addition, when the n-side electrode 8 is formed on the back surface (nitrogen surface) of the n-type GaN substrate 1 and then heat-treated for 10 minutes in a nitrogen gas atmosphere at 500 ° C., the contact resistance is even lower. It was 0.0 × 10 ⁻⁵ Ωcm ² .

  Further, in the manufacturing process of the nitride-based semiconductor laser device according to the present embodiment, as described above, the back surface of the n-type GaN substrate 1 is etched by the RIE method, so that the n-type GaN is compared with the case of mechanical polishing. The flatness of the back surface of the substrate 1 can be further improved. Thereby, the flatness of the n-side electrode 8 formed on the back surface of the n-type GaN substrate 1 can be improved. As a result, in the case of a structure in which the nitride-based semiconductor laser device is attached by junction down, the bonding characteristics of wire bonding to the n-side electrode 8 can be improved. Further, in the case of a structure in which the n-side electrode 8 is attached to the heat dissipation base (submount), the adhesion between the n-side electrode 8 and the heat dissipation base can be improved, so that good heat dissipation characteristics can be obtained. it can.

Next, in order to confirm the effect of the present invention in which the back surface (nitrogen surface) of the n-type GaN substrate is etched using the RIE method, an experiment as shown in Table 1 below was performed.

  Referring to Table 1 above, samples 1 to 7 made of an n-type GaN substrate having a wurtzite structure were subjected to various nitrogen surface (back surface) treatments, and then the electron carrier concentration in the vicinity of the back surface of the n-type GaN substrate was determined. , Measured by an electrochemical CV measurement concentration profiler. Moreover, after forming the n-side electrode on the back surface of the n-type GaN substrate of Samples 1 to 7 after the electron carrier concentration measurement, the contact resistance between the n-type GaN substrate and the n-side electrode was measured by the TLM method.

  The n-side electrodes of Samples 1 to 7 were formed of an Al film, a Si film, a Ni film, and an Au film, as in the above-described embodiment. The other conditions for substrate polishing, RIE etching, and hydrochloric acid treatment are the same as in the above-described embodiment. Sample 6 was produced using the manufacturing process of the above-described embodiment.

As a result, in the samples 3 to 7 according to the present invention in which the back surface of the n-type GaN substrate was etched using the RIE method, the contact resistance was greatly reduced as compared with the sample 1 manufactured by the same method as the conventional method. Specifically, the contact resistance of sample 1 was 20 Ωcm ² , whereas the contact resistance of samples 3 to 7 according to the present invention was 0.05 Ωcm ² or less. This is considered to be due to the following reason. That is, in Samples 3 to 7 according to the present invention, it is considered that the region in the vicinity of the back surface of the n-type GaN substrate containing crystal defects generated by mechanical polishing was removed by etching by the RIE method. For this reason, it is considered that the decrease in the electron carrier concentration due to crystal defects in the vicinity of the back surface of the n-type GaN substrate is suppressed.

In Samples 3 to 7 according to the present invention, the electron carrier concentration in the vicinity of the back surface of the n-type GaN substrate was higher than that of Sample 1 corresponding to the conventional example. Specifically, the electron carrier concentration of Sample 1 corresponding to the conventional example was 2.0 × 10 ¹⁶ cm ⁻³ , whereas the electron carrier concentration of Samples 3 to 7 according to the present invention was 1. It was 0 × 10 ¹⁷ cm ^-3 or more.

Further, by the RIE method using a Cl ₂ gas, in Sample 4 was removed back surface of the n-type GaN substrate by about 1μm thickness of the, by an RIE method using Cl ₂ gas, about the back surface of the n-type GaN substrate 0 A contact resistance lower than that of the sample 3 removed by a thickness of 0.5 μm could be obtained. This is presumably because the removal of the thickness of about 0.5 μm did not sufficiently remove the region near the back surface of the n-type GaN substrate containing crystal defects generated by mechanical polishing. In these samples, when the crystal defect (dislocation) density on the back surface of the n-type GaN substrate was measured by TEM analysis, the crystal defect density of Sample 3 was 1 × 10 ⁹ cm ⁻² . On the other hand, in sample 4, no crystal defects were observed in the observed visual field, and the crystal defect density was 1 × 10 ⁶ cm ⁻² or less. Therefore, it is preferable to remove the back surface of the n-type GaN substrate by a thickness of about 1.0 μm or more by the RIE method.

Further, in the sample 5 etched by the RIE method using Cl ₂ gas and BCl ₃ gas, as compared with the sample 4 in which the back surface of the n-type GaN substrate was etched by the RIE method using only Cl ₂ gas, Furthermore, a low contact resistance could be obtained.

Further, after etching the back surface of the n-type GaN substrate by RIE using Cl ₂ gas and BCl ₃ gas, the sample 6 corresponding to the above-described embodiment in which hydrochloric acid treatment was performed, and further in a nitrogen atmosphere at 500 ° C. Sample 7 that was subjected to heat treatment for 10 minutes at a lower contact resistance than Sample 5 that was not subjected to hydrochloric acid treatment and heat treatment could be obtained. In addition, the comparison between sample 6 and sample 7 can further reduce the contact resistance between the n-type GaN substrate and the n-side electrode by heat treatment, and further improve the electron carrier concentration in the vicinity of the back surface of the n-type GaN substrate. Turned out to be.

Note that, in the sample 2 that was subjected to the immersion treatment (hydrochloric acid treatment) for about 10 minutes with the HCl solution of 10% concentration without performing the etching by the RIE method, compared with the sample 1 corresponding to the conventional example in which the hydrochloric acid treatment was not performed. In addition, a low contact resistance could be obtained. Specifically, the contact resistance of sample 1 was 20 Ωcm ² , while the contact resistance of sample 2 was 0.1 Ωcm ² . This is considered to be because the back surface of the n-type GaN substrate was cleaned by the hydrochloric acid treatment.

Further, when oxygen is used as the n-type dopant of the n-type GaN substrate, the crystallinity is lowered when the carrier concentration is increased by increasing the oxygen doping amount in order to reduce the contact resistance. However, according to the present invention, the contact resistance can be lowered even in the oxygen doping amount (substrate carrier concentration: 5 × 10 ¹⁸ cm ⁻³ ) of the n-type GaN substrate 1 according to the embodiment.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiment but by the scope of claims for patent, and all modifications within the meaning and scope equivalent to the scope of claims for patent are included.

  For example, in the above-described embodiment, the case where the nitride semiconductor laser element is formed using the n-type GaN substrate 1 has been described. However, the present invention is not limited to this, and the n-type nitride system having a wurtzite structure is used. A semiconductor substrate or a nitride semiconductor layer may be used. For example, a nitride semiconductor substrate or nitride semiconductor layer made of BN (boron nitride), AlN (aluminum nitride), InN (indium nitride), TlN (thallium nitride), or the like can be considered. Further, it may be a nitride-based semiconductor substrate or a nitride-based semiconductor layer made of these mixed crystals.

  In the above embodiment, the back surface (nitrogen surface) of the n-type GaN substrate 1 is etched by the RIE method. However, the present invention is not limited to this, and other dry etching (reactive etching) may be used. For example, reactive ion beam etching, radical etching, or plasma etching may be used.

In the above embodiment, the back surface (nitrogen surface) of the n-type GaN substrate 1 is etched by the RIE method using Cl ₂ gas and BCl ₃ gas. However, the present invention is not limited to this. Other etching gases may be used. For example, a mixed gas of Cl ₂ and SiCl ₄ , a mixed gas of Cl ₂ and CF ₄ , or Cl ₂ gas may be used.

  In the above embodiment, after etching by the RIE method, the nitride-based semiconductor laser device structure 20 is immersed in an HCl solution (hydrochloric acid treatment), thereby removing chlorine-based residues attached to the back surface of the n-type GaN substrate 1. Although it removed, this invention is not restricted to this, You may immerse in the solution containing at least 1 of chlorine, a fluorine, a bromine, an iodine, sulfur, and ammonia.

  In the above embodiment, the case where the layers 2 to 6 are grown on the upper surface (Ga surface) of the n-type GaN substrate 1 and then the back surface (nitrogen surface) of the n-type GaN substrate 1 is mechanically polished has been described. The present invention is not limited to this, and after mechanically polishing the back surface (nitrogen surface) of the n-type GaN substrate 1 to a predetermined thickness, the layers 2 to 6 are formed on the upper surface (Ga surface) of the n-type GaN substrate 1. It may be the case. Moreover, the case where the mechanical polishing of the nitrogen surface of the n-type GaN substrate 1 is not performed may be used.

  In the above embodiment, Si and Mg are used as the n-type dopant and the p-type dopant when forming the layers 2 to 6, respectively. However, the present invention is not limited to this, and other n-type or p-type dopants are used. A type of dopant may be used. For example, Se or Ge may be used as the n-type dopant. Further, Be or Zn may be used as the p-type dopant. In the above embodiment, the layers 2 to 6 are formed on the n-type GaN substrate 1 by atmospheric pressure MOCVD. However, the present invention is not limited to this, and the layers 2 to 6 are formed by other growth methods. May be. For example, the layers 2 to 6 may be formed by a low pressure MOCVD method.

  In the above embodiment, the case where the n-type buffer layer 2 is formed on the n-type GaN substrate 1 has been described. However, the present invention is not limited to this, and the n-type buffer layer 2 is not formed. Also good. In this case, the crystallinity of each of the layers 3 to 6 is slightly lowered, but the manufacturing process can be simplified.

  In the above embodiment, the Al / Si / Ni / Au film is used as the n-side electrode 8 material. However, the present invention is not limited to this, and a Ti film having a thickness of 10 nm and an Al film having a thickness of 500 nm. An n-side electrode composed of an Al film having a thickness of 6 nm, an Ni film having a thickness of 10 nm and an Au film having a thickness of 300 nm, or an AlSi film having a thickness of 10 nm and a thickness of 300 nm Other electrode structures containing Al, such as an n-side electrode made of a Zn film having a thickness of 100 nm and an Au film having a thickness of 100 nm, may be used.

  In the above embodiment, the case where the ridge structure is used as the current confinement structure or the lateral light confinement structure has been described. However, the present invention is not limited to this, and a high-resistance block layer or an n-type block layer is used. Current confinement may be performed by the buried structure used. Further, a current confinement layer or a light absorption layer as a lateral light confinement structure may be formed by ion implantation or the like.

  In the above embodiment, the case where the present invention is applied to a nitride-based semiconductor laser device has been described. However, the present invention is not limited to this, and an n-type nitride-based semiconductor layer or nitride having a wurtzite structure. Any semiconductor element using a semiconductor substrate may be used. For example, MESFET (Metal Semiconductor Field Effect Transistor), HEMT (High Electron Mobility Transistor), light emitting diode element (LED), or surface emitting laser element (VCSEL (VerticalErritSicC) is required for surface flatness. The present invention may be applied.

  In the above-described embodiment, the p-side electrode 7 and the n-side electrode 8 having a predetermined thickness are used. However, the present invention is not limited to this, and electrodes having other thicknesses may be used. For example, the thickness of each layer of the electrode may be reduced so that the electrode has translucency, so that it may be used as a surface emitting laser element or a light emitting diode element. In particular, even if the n-side electrode is formed to have a light-transmitting thickness, the contact resistance of the n-side electrode can be sufficiently reduced according to the present invention.

In the above embodiment, the back surface (nitrogen surface) of the n-type GaN substrate 1 is dry-etched by the RIE method. However, the present invention is not limited to this, and the back surface (nitrogen surface) of the n-type GaN substrate 1. May be wet-etched. When the nitrogen surface on the back surface of the n-type GaN substrate 1 is wet-etched, aqua regia, KOH, K ₂ S ₂ O ₈ or the like is used as a wet etchant. For example, the nitrogen surface on the back surface of the n-type GaN substrate 1 may be wet etched at room temperature using KOH having a concentration of 0.1 mol. In this case, if the temperature is raised to about 120 ° C., the etching rate can be increased about 10 times compared to the case of room temperature.

In the above-described embodiment, the case where the back surface made of the nitrogen surface of the n-type GaN substrate 1 is dry-etched by the RIE method has been described. However, the present invention is not limited thereto, and the back surface of the n-type GaN substrate 1 is made of Ga. In the case of a surface, the back surface made of the Ga surface of the n-type GaN substrate 1 may be wet-etched. When the Ga surface on the back surface of the n-type GaN substrate 1 is wet-etched, aqua regia, KOH, K ₂ S ₂ O ₈ or the like is used as a wet etching solution. For example, the Ga surface on the back surface of the n-type GaN substrate 1 may be wet etched at room temperature using a 365 nm mercury lamp using KOH having a concentration of 0.1 mol. In this case, if the temperature is raised to about 120 ° C., the etching rate can be increased about 10 times compared to the case of room temperature.

  In the above-described embodiment, the case where the n-type GaN just substrate whose back surface is the nitrogen surface is used has been described. However, the present invention is not limited to this, and the n-type GaN substrate has a slight Ga surface on the back surface. A type GaN off-substrate may be used. Also in the case of this n-type GaN off substrate, the back surface is included in the nitrogen surface of the present invention.

It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by one Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by one Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by one Embodiment of this invention. It is an expanded sectional view in the process shown in FIG. It is a perspective view for demonstrating the manufacturing process of the nitride type semiconductor laser element by one Embodiment of this invention. It is the graph which showed the change of the etching rate at the time of changing the etching gas of RIE method. It is sectional drawing which showed the conventional nitride semiconductor laser element.

Explanation of symbols

1 n-type GaN substrate (first semiconductor layer)
8 n-side electrode

Claims (4)

a substrate made of an n-type nitride-based semiconductor;
A nitride-based semiconductor layer including an n-type layer, an active layer, and a p-type layer formed on the upper surface of the substrate;
A p-side electrode formed on the p-type layer;
An n-side electrode formed on the back surface of the substrate;
Including
The nitride-based semiconductor layer has a resonator end face formed by cleavage,
A nitride-based semiconductor laser device, wherein a dislocation density in the vicinity of the back surface of the substrate is 1 × 10 ⁹ cm ⁻² or less. The nitride-based semiconductor layer is formed on a Ga surface of the substrate,
The nitride-based semiconductor laser device according to claim 1, wherein the n-side electrode is formed on a nitrogen surface of the substrate.   The nitride-based semiconductor laser device according to claim 1, wherein the substrate has a thickness of 120 μm to 180 μm. 4. The nitride-based semiconductor laser device according to claim 1, wherein a dislocation density in the vicinity of the back surface of the substrate is 1 × 10 ⁶ cm ⁻² or less. 5.

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