JP3759266B2 - Zinc-deposited film and metallized film capacitor - Google Patents

Description

【００４５】
［実験２］
プラスチックフィルム上にアルミニウム核を付着させたのちに亜鉛層を蒸着形成し、さらに酸化珪素層を形成した本発明の構成において、アルミニウム核の付着量と亜鉛層の付着量とを一定にしたまま、酸化珪素層の厚さを変化させて、亜鉛層の表面抵抗の変化率を実験１と同様に測定した。結果を表２に示す。
【００４６】
【表２】

【００４７】
【発明の効果】
以上説明したように、本発明に係る亜鉛蒸着フィルムおよび金属化フィルムコンデンサによれば、アルミニウム核および酸化珪素層の相乗効果により、製品として要求される亜鉛層の耐食性を満たしつつ、亜鉛層を薄肉化することが可能となるので、良好な自己回復性が得られるという優れた効果を奏する。
【図面の簡単な説明】
【図１】 本発明に係る亜鉛蒸着フィルムの一実施形態を示す断面拡大図である。
【図２】 同亜鉛蒸着フィルムの製造に使用される装置の一例を示す側面図である。
【図３】 本発明に係る亜鉛蒸着フィルムの一実施形態の平面図である。
【図４】 本発明に係る金属化フィルムコンデンサの一実施形態の展開図である。
【図５】 本発明に係る金属化フィルムコンデンサの他の実施形態の展開図である。
【図６】 従来の金属化フィルムコンデンサを一部分解した斜視図である。
【符号の説明】
Ｆ１ 亜鉛蒸着フィルム
１０ プラスチックフィルム
１２ アルミニウム核
１４ 亜鉛層
１６ 酸化珪素層
１８，１９ マージン[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a zinc vapor deposited film and a metallized film capacitor.
[0002]
[Prior art]
For example, as shown in FIG. 6, the metallized film capacitor has two metal vapor-deposited films 3 formed by forming an aluminum or zinc vapor-deposited film 2 on one side of a belt-shaped plastic film 1 and is wound into a cylindrical shape. It has a structure in which electrodes 5 are sprayed on both ends of the body, and since the metal vapor deposition layer is very thin, even if voltage breakdown occurs at the weak point of the film, the metal vapor deposition layer around the fracture portion is caused by a short circuit current. It has a feature of self-healing property that evaporates by heat and recovers insulation.
[0003]
By the way, as the metal thin film formed on the metal vapor-deposited film, aluminum or zinc is generally used, but the aluminum thin film is likely to be corroded by corona discharge, and the capacitor capacity tends to gradually decrease due to the disappearance of the electrode area. . In addition, the aluminum thin film has the disadvantage that the bonding property with the zinc electrode sprayed on both ends of the capacitor element is poor, and the current resistance is low because Joule heat is generated due to an increase in electric resistance.
[0004]
On the other hand, the zinc thin film has no problem of corrosion occurrence and has good bondability with the thermal spray electrode, but has a defect that it is inferior in corrosion resistance (moisture resistance). It reacts with moisture during storage and is porous. There is a problem that corrosion of the Zn (OH) ₂ occurs and the capacitor characteristics deteriorate. Therefore, when using a zinc thin film, measures such as impregnating a zinc vapor-deposited film with wax or insulating oil have been taken, but this increases the cost and impregnation with wax or insulating oil takes several tens of hours. It took a long time and there was a problem of poor productivity.
[0005]
As means for solving these problems, Japanese Patent Laid-Open No. 62-277712 describes a structure in which a zinc vapor deposition layer is formed on the surface of a plastic film, and further a 50 to 1000 angstrom SiO or SiO ₂ vapor deposition layer is formed. Yes. By forming such a SiO or SiO ₂ vapor deposition layer, the effect of protecting the surface of the zinc vapor deposition layer and preventing the zinc thin film from becoming Zn (OH) ₂ can be obtained. Further, since the silicon oxide layer can be continuously formed on the same line as the zinc vapor deposition, the productivity can be improved.
[0006]
[Problems to be solved by the invention]
By the way, recently, in order to improve reliability such as withstand voltage characteristics of the metallized film capacitor, it is desired to make the metal vapor deposition layer of the metal vapor deposition film thinner. If the metal vapor deposition layer is made thin, even if a short circuit occurs between the metal vapor deposition layers of the two superimposed films, the metal vapor deposition layer at the short circuit point will locally evaporate with less Joule heat, Short circuit is easily eliminated without damaging the metal vapor deposition film, so that the so-called self-recovery improves not only the withstand voltage characteristics of the capacitor, but also reduces the amount of metal to be deposited, thus reducing the manufacturing cost. This is because the manufacturing efficiency can be increased.
[0007]
However, when zinc is thinly deposited, it becomes difficult to form a vapor deposition film uniformly, the adhesion of the zinc vapor deposition layer to the plastic film is deteriorated, and the zinc vapor deposition layer is peeled off by slight friction. Furthermore, it becomes difficult to obtain a protective effect by the silicon oxide vapor deposition layer formed on the zinc vapor deposition layer, and it is partially converted to zinc oxide during storage, and the planned capacitance cannot be obtained. Various problems occur. For this reason, in reality, it has been difficult to manufacture a metallized film capacitor having a thin zinc layer.
[0008]
The present invention has been made in view of the above circumstances, and an object thereof is to provide a zinc-deposited film and a metallized film capacitor excellent in corrosion resistance despite the fact that the surface resistance value of the zinc-deposited layer is uniform and high.
[0009]
[Means for Solving the Problems]
A zinc-deposited film according to the present invention includes a plastic film, an aluminum nucleus deposited on the surface of the plastic film, a zinc layer deposited on the surface of the plastic film on which the aluminum nucleus is deposited, and the zinc layer. A deposited silicon oxide layer , the aluminum core adhesion amount is 0.3-4.0 mg / m ² , the zinc layer adhesion amount is 40-500 mg / m ² , silicon deposition amount of the silicon oxide layer is characterized by a 0.4~3.0mg / ^{m 2.}
[0010]
Further, the metallized film capacitor according to the present invention is a metallized film capacitor having two kinds of laminated metal vapor deposited films, and at least one of the metal vapor deposited films is formed on a plastic film and the surface of the plastic film. and aluminum nuclei deposited, the zinc layer deposited on the surface of the plastic film on which aluminum nuclei was deposited, which comprises a vapor-deposited silicon oxide layer on said zinc layer, deposition amount of the aluminum core Is 0.3 to 4.0 mg / m ² , the adhesion amount of the zinc layer is 40 to 500 mg / m ² , and the silicon adhesion amount of the silicon oxide layer is 0.4 to 3.0 mg / m ² . It characterized in that there.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is an enlarged cross-sectional view showing an embodiment F1 of the zinc vapor-deposited film according to the present invention. The zinc vapor-deposited film F1 includes a plastic film 10, an aluminum core 12 deposited on the surface of the plastic film 10, a zinc layer 14 deposited on the surface of the plastic film 10 on which the aluminum core 12 is vapor-deposited, and a zinc layer 14 And a silicon oxide layer 16 deposited thereon.
[0012]
The material of the plastic film 10 is not limited, but generally, one or two or more selected from polyethylene terephthalate, polypropylene, polystyrene, polycarbonate, polytetrafluoroethylene, polyethylene, polyphenylene sulfide, and polyvinylidene fluoride are used. The thing formed by laminating | stacking etc. can be illustrated. The thickness of the plastic film 10 should be appropriately set according to the use, but is generally 0.5 to 25 μm, more preferably 1.5 to 16 μm. The planar shape of the plastic film 10 is not limited.
[0013]
The aluminum core 12 is deposited on the surface of the plastic film 10 by a sputtering method such as a vacuum deposition method or a high-frequency magnetron sputtering method, and the adhesion amount is preferably 0.3 to 4 mg / m ² . If the adhesion amount of the aluminum core 12 is less than 0.3 mg / m ^2, it is difficult to obtain the effect of the present invention. ^{On the other hand, if} it is thicker than 4 mg / m ² , the electrical characteristics of the zinc layer 14 are affected, which is not preferable. Generally more preferred range is 0.6~3.0mg / m ^2, it at the time of thinning is 1.0 to 3.0 / m ^2, especially up to zinc layer 14 on the surface resistance value 15 [Omega] / □ or more Is desirable.
[0014]
Since aluminum is highly active, even if only a small amount is deposited on the plastic film 10 as described above, it can be uniformly deposited as very small particles over the entire area of the plastic film 10 to be deposited. it can. Thus, when zinc is vapor-deposited on the plastic film 10 in which the aluminum nuclei 12 are uniformly dispersed, a uniform film can be easily formed even when vapor deposition is extremely thin.
[0015]
On the other hand, when zinc is deposited without forming the aluminum core 12, it is difficult to form the zinc layer 14 having a uniform and thin thickness. The reason is that the zinc particles are unfamiliar with the plastic film 10 and are not easily fixed on the plastic film 10, and the zinc particles that have landed on the plastic film 10 move on the film surface, causing local agglomeration and film formation. This is thought to be because the film does not grow uniformly. The present inventors have also tried to form a metal deposition layer other than aluminum, for example, after vapor deposition of copper nuclei, but even when copper nuclei are used, they are uniform and as in the case of aluminum nuclei 12. It is difficult to form the thin zinc layer 14, and the corrosion resistance of the zinc layer 14 is also lowered. The cause of this is not clear, but since aluminum has a smaller average particle diameter of metal nuclei adhering to the plastic film 10, a larger number of nuclei are generated, and further, the dispersibility of the nuclei is good. It is presumed that the structure is in place and the active site density decreases. In addition, since the aluminum core 12 has a smaller heat capacity during vapor deposition, there is less thermal damage to the plastic film 10, and this point may also appear as a difference in the effects described above.
[0016]
In general, the adhesion amount of the zinc layer 14 is preferably 40 to 500 mg / m ² , more preferably 70 to 300 mg / m ² . In particular, when a surface resistance value of 15 Ω / □ or more is obtained, 40 to 90 mg / m ² is desirable. Note that the practical upper limit of the surface resistance value of the zinc layer 14 is considered to be about 40Ω / □. The method for depositing the zinc layer 14 is not particularly limited, and a sputtering method such as a vacuum deposition method or a high-frequency magnetron sputtering method is used.
[0017]
The silicon oxide layer 16 is made of SiOx, and the value of x is preferably 0.5 to 2.0. Whether x is smaller or larger than the above range, the barrier property is deteriorated. More preferably, x = 1.0 to 2.0, and further preferably 1.5 to 1.8.
[0018]
The adhesion amount of the silicon oxide layer 16 is generally preferably 0.4 to 3.0 mg / m ² , more preferably 0.8 to 1.5 mg / m ² as the adhesion amount of silicon. In particular, when the surface resistance value of the zinc layer 14 is set to 15Ω / □ or more, it is preferably 1.0 to 1.5 mg / m ² . When the adhesion amount of the silicon oxide layer 16 is less than 0.4 mg / m ² , it becomes difficult to obtain an antioxidant effect due to a synergistic effect with the aluminum core 12, and the corrosion resistance of the zinc layer 14 is lowered. If the thickness of the silicon oxide layer 16 is as thin as 2.0 mg / m ² (mass film thickness = about 9 Å) in terms of silicon adhesion, the silicon oxide layer 16 is considered to be a porous film rather than a dense film. The reason why the corrosion resistance improving effect can be obtained even with such a porous film is that silicon oxide is selectively bonded to the active points (kinks, steps, etc.) on the surface of the zinc layer 14, and zinc oxide, hydroxide This is considered to prevent the generation / growth. In the present invention, since the film structure of the zinc layer 14 is adjusted by adopting the aluminum core 12, the active point density on the surface is reduced, and it is assumed that the active point is effectively masked by the silicon oxide layer 16. .
[0019]
On the other hand, the metallized film capacitor according to the present invention is characterized by using the zinc vapor-deposited film F1 having the structure as described above, and may have the same structure as that of the prior art except for this point. . That is, in the case of a wound type capacitor, as shown in FIG. 4, two zinc vapor deposition films F1 are stacked or another metal vapor deposition film F2 is wound on the zinc vapor deposition film F1, Electrodes 54 and 56 are joined to both ends of the wound body by thermal spraying or the like, terminals from these electrodes 54 and 56 are formed, and an exterior covering the whole is formed. On the other hand, in the case of a multilayer capacitor, a large number of the above-described zinc vapor-deposited films F1 are laminated or alternately laminated with other types of metal vapor-deposited films, and two kinds of electrodes are alternately connected to each film. What is necessary is just to provide an exterior.
[0020]
Next, an example of the manufacturing method of the zinc vapor deposition film which consists of the said structure is demonstrated.
FIG. 2 shows an example of a manufacturing apparatus that can be used in this method. Reference numeral 20 denotes a vacuum vessel, the inside of which is decompressed by a vacuum pump (not shown), and various gases can be introduced as required. An uncoiler 22 that feeds out the plastic film 10 and a recoiler 44 that winds up the metal vapor-deposited film F1 after the vapor deposition treatment are disposed in the vacuum container 20. The plastic film 10 wound around the uncoiler 22 is set to a multiple of the film width when the capacitor is actually manufactured, and is cut into a required width after the vapor deposition process is completed, and is used for manufacturing the capacitor. The zinc vapor deposition film as referred to in the present invention includes both a wide state and a narrow state after cutting.
[0021]
Between the uncoiler 22 and the recoiler 44, a roll 24, a first cooling roll 26, a roll 36, a second cooling roll 38, and a roll 42 are arranged in order so as to guide the film 10 respectively. It is rotated by the means in synchronism with the film running.
[0022]
An oil adhesion device 28 is disposed between the roll 24 and the first cooling roll 26 so as to face the film 10. The oil adhering device 28 adheres mask oil to the surface of the plastic film 10 so as to form a margin shape. In this example, the horizontal margin 18 and the vertical margin 19 are formed as shown in FIG. Adhere mask oil to the power. The oil adhering device 28 is a kind of printing device, but is not a general direct printing device, and is not contacted with a mask oil or a gap between the plastic film 10 so as not to damage the plastic film 10. A type of printing by spraying the vapor is preferable.
[0023]
In the oil adhering device 28, oil of a fluorine-based compound such as perfluoroalkyl polyether is put. The oil is atomized or vaporized and ejected to adhere to the surface of the plastic film 10 on which metal is to be deposited. As a result, oil adhesion portions having shapes corresponding to the margins 18 and 19 shown in FIG. 3 are formed on the surface of the plastic film 10. As a result, the deposition of the aluminum nuclei 12 and the zinc layer 14 on the oil adhering portion is prevented, so that margins 18 and 19 where no metal or the like is deposited are formed. However, the shapes of the margins 18 and 19 may be appropriately changed according to a desired product standard, and if necessary, a zinc-deposited film having no margin portion may be used.
[0024]
Each of the first cooling roll 26 and the second cooling roll 38 has a refrigerant path through which a refrigerant fluid is circulated, and the surface temperature is increased by continuously supplying a refrigerant such as freon from a refrigerant supply means (not shown). It is always cooled to be, for example, −10 to −30 ° C. However, it is not limited to this temperature range.
[0025]
The lower part of the vacuum vessel 20 is partitioned by a horizontal partition wall 30. Openings 30 </ b> A and 30 </ b> B are formed in the partition wall 30, and the lower ends of the first cooling roll 26 and the second cooling roll 38 are projected downward from the partition wall 30 through the openings 30 </ b> A and 30 </ b> B. The plastic film 10 is brought into close contact with the projected lower ends of the first cooling roll 26 and the second cooling roll 38 and is conveyed synchronously.
[0026]
At a position facing the upstream side portion in the film running direction of the lower end portion of the first cooling roll 26, the nucleus attachment device 32 is arranged toward the first cooling roll 26. The nucleus attaching device 32 is for depositing a small amount of aluminum on the plastic film 10 to form the aluminum nucleus 12. The nucleus attaching device 32 generates aluminum vapor by a vacuum deposition method or a sputtering method, and spreads over the entire surface of the plastic film 10. Spray evenly. Thereby, the aluminum nucleus 12 adheres to the whole surface of the part except an oil adhesion part with a uniform density. Note that the preferable aluminum deposition amount by the nucleus attaching device 32 is as described above.
[0027]
A zinc evaporation source 34 is disposed toward the first cooling roll 26 at a position facing the downstream portion of the lower end portion of the first cooling roll 26. The zinc evaporation source 34 is for vapor-depositing zinc on the plastic film 10 to a certain thickness. Zinc vapor is generated by a vacuum evaporation method or a sputtering method, and is uniformly attached over the entire width of the plastic film 10. Let A suitable zinc deposition amount by the zinc evaporation source 34 is as described above.
[0028]
A silicon oxide evaporation source 40 is disposed toward the plastic film 10 at a position facing the film winding surface of the second cooling roll 38. The silicon oxide evaporation source 40 is for evaporating SiOx and depositing it on the zinc layer 14, and a suitable deposition amount and a suitable value of x are as described above.
[0029]
Next, the manufacturing method of the metal vapor deposition film and metallized film capacitor | condenser using the said apparatus is demonstrated.
The uncoiler 22, the rolls 24, 36, and 42, the first cooling roll 26, the second cooling roll 38, and the recoiler 44 are all rotationally driven in synchronization. The plastic film 10 fed out from the uncoiler 22 is first sprayed with the oil or its vapor ejected from the oil adhering device 28 to form an oil adhering portion having a margin shape.
[0030]
The plastic film 10 to which oil is adhered is wound around the first cooling roll 26, and a small amount of aluminum nuclei 12 are vapor-deposited at a uniform density by the nucleus attachment device 32 at an upstream position of this winding portion, and subsequently zinc The zinc layer 14 having a constant thickness is formed by the evaporation source 34. At this time, the aluminum core 12 and the zinc layer 14 are not deposited on the oil adhesion portion.
[0031]
The plastic film 10 on which the zinc layer 14 is formed is wound around a second cooling roll 38 that is forcibly cooled, and steam is blown from the silicon oxide evaporation source 40 in close contact with the second cooling roll 38, and silicon oxide is deposited on the zinc layer 14. Layer 16 is formed. The completed zinc vapor-deposited film F <b> 1 formed with the silicon oxide layer 16 is sequentially wound around the recoiler 44.
[0032]
An example of the zinc vapor deposition film F1 wound around the recoiler 44 is shown in FIG. In this example, the vertical margin 19 extending in the longitudinal direction of the plastic film 10 and the lateral margin 18 extending in the width direction are formed. However, in the present invention, it is not necessary to be limited to this margin shape. If necessary, no margin can be formed.
[0033]
The zinc vapor-deposited film F1 in FIG. 3 is applied to a slitter device, and is cut along a one-dot chain line in FIG. 3 so as to match the size of the capacitor to be manufactured. The narrow zinc vapor-deposited film F1 thus cut is wound around a bobbin and then transferred to a capacitor manufacturing process.
[0034]
In the capacitor manufacturing process, as shown in FIG. 4, the zinc vapor deposition film F1 and the second metal vapor deposition film F2 are overlapped with the metal vapor deposition surface facing the same side. The metal vapor-deposited film F2 may be the same as the zinc vapor-deposited film F1, may be a film obtained by omitting the lateral margin 18 from the zinc vapor-deposited film F1, or is obtained by vapor-depositing other types of metals. However, the widths are preferably substantially the same. In the overlapped state, the vertical margins 19 and 52 formed on the films F1 and F2 are arranged on the opposite sides of each other and are shifted from the inner side of the metal vapor deposition surface of the counterpart film. This is for the convenience of joining the electrodes 54 and 56 to the respective vapor deposition layers 14 and 50 by thermal spraying or the like.
[0035]
In addition, when the margins 18 and 19 having the shape shown in FIG. 4 are formed on the zinc vapor-deposited film F1, the following advantages are obtained by the combination with the present invention. That is, when such a margin shape is adopted, the metal vapor deposition layer is divided into a large number of rectangular shapes. Therefore, if a short circuit that cannot be recovered by self-healing occurs in any rectangular region, The boundary portion H between the rectangular region of the vapor deposition layer and the electrode 54 evaporates due to Joule heat, so that the fuse is blown and the current supply to the short-circuited portion is stopped. However, in practice, this margin shape is limited to the case of using an aluminum vapor deposition layer exclusively. This is because in this margin shape, since the fuse portion H is wider than the fuse portion 60 as shown in FIG. 5, a sufficient fuse effect cannot be obtained with a zinc layer that is difficult to be thinned. However, if the present invention is adopted, it is easy to reduce the thickness of the zinc layer 14, so that a reliable fuse effect can be obtained even if such a margin shape is adopted. This margin shape has an advantage that the manufacturing cost is lower than other margin shapes exhibiting a fuse effect.
[0036]
On the other hand, FIG. 5 shows a case in which a vertical margin 58 is additionally formed on the zinc vapor deposition film F1 used in FIG. Of course, such a margin shape can also be employed.
[0037]
The films F1 and F2 stacked as shown in FIG. 4 or 5 are wound, for example, in a columnar shape, electrodes 54 and 56 are formed at both ends thereof, terminals such as leads are connected to these, and an insulator is further formed. An exterior is formed to complete the metallized film capacitor. The electrodes 54 and 56 are generally formed by spraying a metal, particularly zinc. Since the zinc vapor-deposited film of the present invention has the zinc layer 14, it has an advantage that the bonding property with the sprayed zinc electrode is good and the electric resistance due to poor bonding hardly occurs.
[0038]
According to the zinc vapor deposition film having the above-described configuration, the zinc layer 14 can be vapor-deposited in a thin and uniform thickness by the action of the aluminum core 12, so that the surface resistance value of the zinc layer 14 can be increased. It becomes easier to improve the self-recovery property of the capacitor than the conventional product. In addition, since the aluminum core 12 is formed, the structure of the zinc layer 14 is relatively well-organized even when the zinc layer 14 is thin. Therefore, the active points with disordered crystal structure existing on the surface of the zinc layer 14 ( It is considered that the distribution density of kink, step, etc.) can be reduced. Thereby, since the surface active point of the zinc layer 14 can be effectively masked by the silicon oxide layer 16, it is possible to sufficiently enhance the corrosion resistance of the zinc layer 14 even though the zinc layer 14 is thin. Therefore, it is possible to prevent a decrease in the area of the zinc layer 14 due to Zn (OH) ₂ formation, which was a problem when the zinc layer 14 is thinned, and to prevent a change in capacity during storage.
[0039]
That is, in the present invention, the synergistic effect of the aluminum core 12 and the silicon oxide layer 16 makes it possible to reduce the thickness of the zinc layer 14 and increase its surface resistance while satisfying the corrosion resistance of the zinc layer 14 required as a product. Therefore, both corrosion resistance and self-recovery can be achieved. Moreover, since the amount of vapor deposition of the zinc layer 14 and the silicon oxide layer 16 is small, not only the cost required for vapor deposition can be reduced, but also the line speed in the vapor deposition process can be increased to increase the productivity.
[0040]
【Example】
[Experiment 1]
Examples 1 to 6 and Comparative Examples 1 and 2 of the present invention, in which a zinc layer was deposited by depositing an aluminum nucleus on a plastic film and a silicon oxide layer was further formed, and a copper nucleus was used instead of the aluminum nucleus After the deposition, a zinc layer was formed by vapor deposition, and further, Comparative Examples 3 to 8 each having a silicon oxide layer were formed, and the adhesion of the zinc layer and the change in the surface resistance of the zinc layer under a high humidity and high temperature environment The rate was measured. It is difficult to form a zinc layer without vapor deposition nuclei.
[0041]
The plastic film used in the experiment is a polypropylene film having a width of 30 mm and a thickness of 5 μm. Vacuum deposition was used as the method for depositing the nuclei and forming the zinc layer and the silicon oxide layer.
[0042]
The adhesion of the zinc layer was evaluated by leaving the prepared zinc vapor-deposited film in the air at room temperature for 24 hours, applying a cellophane tape on the silicon oxide layer, and peeling it off immediately. Evaluation criteria are “4” where the peeled area is less than 20% of the applied area, “3” is the peeled area of 20% to less than 50% of the applied area, and “2” is the peeled area. Means 50% or more and less than 80% of the sticking area, and “1” means that the area of the peeled portion is 80% or more.
[0043]
The rate of change in the surface resistance of the zinc layer was determined as follows. First, a plurality of test pieces having a length of 10 m were cut from the prepared zinc vapor-deposited film, two films of the same kind were stacked on each other, and the sample was wound into a column using a winding device. Next, these samples were placed in a high-temperature and high-humidity environment under the conditions of 70 ° C. × 80% RH × 12 hours, and the surface resistance of the zinc layer before and after this deterioration test was determined as “Kumi Tester L-3” manufactured by Yokogawa Electric Corporation. Was measured based on 8 (7) of JIS C-2316. From the measured surface resistance value, the change rate of the surface resistance was calculated based on the following formula.
Change rate of surface resistance (%) =
([Resistance value after test] / [Resistance value before test] -1) × 100
The results of Experiment 1 are shown in Table 1.
[0044]
[Table 1]

[0045]
[Experiment 2]
In the configuration of the present invention in which a zinc layer is deposited after forming an aluminum nucleus on a plastic film and a silicon oxide layer is further formed, the amount of aluminum nucleus and the amount of zinc layer are kept constant, The change rate of the surface resistance of the zinc layer was measured in the same manner as in Experiment 1 by changing the thickness of the silicon oxide layer. The results are shown in Table 2.
[0046]
[Table 2]

[0047]
【The invention's effect】
As described above, according to the zinc vapor deposition film and the metallized film capacitor according to the present invention, the zinc layer is thinned while satisfying the corrosion resistance of the zinc layer required as a product by the synergistic effect of the aluminum core and the silicon oxide layer. Therefore, there is an excellent effect that a good self-recovering property can be obtained.
[Brief description of the drawings]
FIG. 1 is an enlarged cross-sectional view showing an embodiment of a zinc vapor deposition film according to the present invention.
FIG. 2 is a side view showing an example of an apparatus used for producing the zinc vapor-deposited film.
FIG. 3 is a plan view of an embodiment of the zinc vapor deposition film according to the present invention.
FIG. 4 is a development view of one embodiment of a metalized film capacitor according to the present invention.
FIG. 5 is a development view of another embodiment of the metallized film capacitor according to the present invention.
FIG. 6 is a partially exploded perspective view of a conventional metallized film capacitor.
[Explanation of symbols]
F1 Zinc vapor deposition film 10 Plastic film 12 Aluminum core 14 Zinc layer 16 Silicon oxide layers 18, 19 Margin

Claims (4)

A plastic film; an aluminum nucleus deposited on the surface of the plastic film; a zinc layer deposited on the surface of the plastic film on which the aluminum nucleus is deposited; and a silicon oxide layer deposited on the zinc layer. The adhesion amount of the aluminum nucleus is 0.3 to 4.0 mg / m ² , the adhesion amount of the zinc layer is 40 to 500 mg / m ² , and the silicon adhesion amount of the silicon oxide layer is 0 A zinc-deposited film, characterized in that it is 4 to 3.0 mg / m ² . The zinc vapor-deposited film according to claim 1, wherein the zinc layer has a surface resistance value of 1 to 50Ω / □ . A metallized film capacitor having two kinds of laminated metal deposited films, wherein at least one of the metal deposited films is a plastic film, an aluminum nucleus deposited on the surface of the plastic film, and the aluminum nucleus is deposited. A zinc layer deposited on the surface of the plastic film, and a silicon oxide layer deposited on the zinc layer, and the adhesion amount of the aluminum core is 0.3 to 4.0 mg / m. ² The amount of the zinc layer deposited is 40 to 500 mg / m ² The silicon adhesion amount of the silicon oxide layer is 0.4 to 3.0 mg / m ² A metallized film capacitor characterized in that The metallized film capacitor according to claim 3, wherein a margin extending in a width direction of the metal vapor deposited film is formed on at least one of the metal vapor deposited films .

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