JP3527902B2 - Semiconductor element storage package and semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element, and a semiconductor device in which a semiconductor element is housed in the semiconductor element housing package, and more particularly to a heat sink or the like of an external device. It relates to an improved packaging structure.

[0002]

2. Description of the Related Art A conventional semiconductor device housing package (hereinafter referred to as a semiconductor package) A for housing a semiconductor device is shown in FIG. 3 (a) in a plan view and in FIG. 3 (b) at H-.
It is shown in a sectional view taken along the line H ′. The figure shows a case where a ceramic substrate is bonded to the entire upper surface of a metal plate which constitutes a bottom plate. In these figures, 11 is a substantially rectangular metal plate, 11A is a long side of the metal plate, and 11B is a metal plate. Reference numeral 11 is a short side, 12 is a ceramic substrate, 12a is a semiconductor element mounting portion, 13 is a frame, 14 is an input / output terminal, and 15 is a lid. These metal plate 11, ceramic substrate 12, frame 1
3, the input / output terminal 14, and the lid body 15 internally form the semiconductor element C.
A container for housing is basically configured.

The metal plate 11 is made of a metal material such as a copper (Cu) -tungsten (W) alloy or an iron (Fe) -nickel (Ni) -cobalt (Co) alloy, and has an upper surface made of alumina (Al ₂ O _3). ) quality sintered body and mullite (3Al ₂ O ₃ · 2Si
_A ceramic substrate 12 made of a ₂ O ₃ ) sintered material or the like is attached, and a mounting portion 12a on which the semiconductor element C is mounted is provided on the ceramic substrate 12. The metal plate 11 has screw attachment portions 11a at four end portions of both short sides 11B, each of which is provided with an outwardly extending protrusion and a screw hole 11b formed of a through hole or a notch.

On the metal plate 11, the semiconductor element C is placed on the mounting portion 12.
The heat generated by the semiconductor element C when it is mounted and fixed on a and operates is efficiently the heat dissipation plate D of the external electric circuit board (not shown).
It functions as a so-called heat transfer medium that transfers heat to the heat sink, and is fixed by screwing the screw into the screw hole 11b of the screw mounting portion 11a and fixing the screw to the heat dissipation plate D.

On the upper surface of the ceramic substrate 12, Fe--N
An input / output terminal 14 made of a metal material such as an i-Co alloy or an Fe-Ni alloy and having a through hole or a notch on a side portion.
The frame body 13 having the mounting portion 13a is joined by brazing material such as silver (Ag) brazing so as to surround the mounting portion 12a.

An input / output terminal 14 for inputting / outputting a high frequency signal between the semiconductor element C and the external electric circuit board is attached to the inner peripheral surface of the mounting portion 13a. The input / output terminal 14 is provided with a metallization layer 14a for transmitting high frequency signals.

After the semiconductor element C is housed in the semiconductor package A having such a structure and mounted and fixed on the ceramic substrate 12, the semiconductor element C and the metallized layer 14a are electrically connected by a bonding wire (not shown). Then, the semiconductor element C is hermetically sealed by the lid body 15 to form a semiconductor device as a product. The semiconductor element C operates by the high frequency signal input from the external electric circuit board.

[0008]

However, the screw mounting portion 11a of the semiconductor package A is extended outward from the vicinity of both ends of both short sides 11B of the metal plate 11, and the metal plate 11 is screwed into the screw hole 11b. Inserted and screwed to the external electrical circuit board. Therefore, the metal plate 11 is integrated with the heat dissipation plate D made of a metal such as aluminum (Al) forming the external electric circuit board, and the heat generated from the semiconductor element C during the operation of the semiconductor device is transmitted through the metal plate 11. When transmitted to the heat sink D, the thermal expansion coefficient of the heat sink D is 20
Since it is as large as × 10 ^-6 / ° C or more, Cu-W alloy, Fe
There is a large difference in thermal expansion between the semiconductor device using the metal plate 11 made of a material having a thermal expansion coefficient (6 × 10 ^{−6 to} 7 × 10 ⁻⁶ / ° C.) close to that of ceramics such as Ni—Co alloy. Occur.

At this time, since the metal plate 11 is firmly fixed to the heat radiation plate D by the screw mounting portion 11a, the screw mounting portion 11a has a long side 11A along with the thermal expansion of the heat radiation plate D on the metal plate 11. The pulling force acts in the outer direction K, K1 (FIG. 3) in a direction substantially parallel to the outer direction K, and the screw mounting portion 11a moves in the outer direction K, K1.
It will extend to K1 and move a little. A large tensile stress acts on the metal plate 11 along with the movement of the screw mounting portion 11a, and the metal plate 11 also extends. As a result, a crack may occur in the ceramic substrate 12 on the metal plate 11, and the crack may cause a disconnection in the wiring conductor formed on the ceramic substrate 12, or the ceramic substrate 12 may be mounted and fixed on the ceramic substrate 12. There is a problem that the semiconductor element C is cracked.

The Al plate is used as the heat dissipation plate D because the Al plate is extremely lightweight, has a large thermal conductivity, and has a relatively large rigidity. This is because the above points are comprehensively superior.

Further, when the ceramic substrate 12 is attached to the inside of the frame body 13 and the frame body 13 is directly joined to the upper surface of the metal plate 11, it is fitted in the mounting portion 13a of the frame body 13. As described above, the tensile stress acts on the output terminal 14 during the operation of the semiconductor device, and the input / output terminal 14 is cracked to impair the hermeticity of the semiconductor device.

Therefore, the present invention has been completed in view of the above problems, and an object thereof is to prevent a large tensile stress from acting on a semiconductor device when the semiconductor device is attached to an external electric circuit board and operated. By doing so, it is possible to effectively prevent the destruction of the ceramic substrate attached to the upper surface of the metal plate of the semiconductor device or the input / output terminals fitted to the frame body, and to keep the semiconductor element normal and stable for a long period of time. To activate it.

[0013]

A semiconductor package of the present invention has a substantially rectangular shape, and has a screw mounting portion having a through hole formed in an overhanging portion formed to extend outward at a corner. A metal plate, a ceramic substrate having a lower main surface bonded to the upper surface of the metal plate, and a mounting portion for mounting a semiconductor element on the upper main surface; and an outer periphery of the metal plate or the upper surface of the ceramic substrate. A frame body attached to the mounting portion so as to surround the mounting portion, and a side portion having a mounting portion for an input / output terminal formed of a through hole or a cutout portion; and an input / output fitted to the mounting portion. In the package for storing a semiconductor element including a terminal, the screw mounting portion is provided at both ends of each long side of the metal plate so as to extend outward in a direction parallel to the short side. The through hole is formed at the tip portion, and On the side on the side, a notch is formed by cutting out from the long side to the vicinity of the through hole so that a corner is formed in the vicinity of the through hole, and the notch is the through hole. The corner portion near the hole is 45 to 90 °, and the length of the inner portion parallel to the short side is 1 to 5 mm.

According to the present invention, when the semiconductor element is housed in the semiconductor package to form a semiconductor device having the above-described structure, and the semiconductor device is operated by screwing and fixing the semiconductor device to the heat dissipation plate of the external electric circuit board. In addition, it is possible to effectively prevent the heat dissipation plate from being thermally expanded by the heat generated by the semiconductor element and the semiconductor device to receive a tensile stress, thereby destroying the ceramic substrate and the semiconductor element. Further, when the frame body is directly attached to the metal plate, it is possible to prevent breakage of the input / output terminal fitted to the attachment portion of the frame body. As a result, the hermeticity of the semiconductor package is not impaired, and the semiconductor element can be operated normally and stably for a long period of time.

The semiconductor device of the present invention comprises the above-mentioned package for housing a semiconductor element of the present invention, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminals, and an upper surface of the frame body. And a lid bonded to the.

The present invention can provide a highly reliable semiconductor device capable of operating the semiconductor element normally and stably for a long period of time without causing cracks or oxidative corrosion in the semiconductor element with the above structure. .

[0017]

DETAILED DESCRIPTION OF THE INVENTION A semiconductor package and a semiconductor device of the present invention will be described in detail below. FIG. 1A is a plan view showing an example of an embodiment of a semiconductor package A1 of the present invention. In the figure, a case where a ceramic substrate is bonded to the entire upper surface of a metal plate is shown. Of course, in the present invention, the ceramic substrate may be smaller than the metal plate, and the frame body may be joined to the outer peripheral portion of the upper surface of the metal plate. Figure 1
FIG. 2B is a sectional view taken along the line GG ′ in FIG. 1. 2 is an enlarged plan view of the main part of FIG.

In these figures, 1 is a substantially rectangular metal plate, 1A is the long side of the metal plate 1, 1B is the short side of the metal plate 1, 1
Reference numeral a is a screw mounting portion, and reference numeral 1b is a screw hole formed of a through hole.
Further, 1c is a tip portion of the screw mounting portion 1a, 1d is a base portion of the screw mounting portion 1a, 1f is a corner portion of the cutout portion F near the screw hole 1b, and F is a cutout portion. 2 is a ceramic substrate,
3 is a frame, 4 is an input / output terminal, and 5 is a lid. The metal plate 1, the ceramic substrate 2, the frame 3, the input / output terminals 4, and the lid 5 basically constitute a container for hermetically containing the semiconductor element C therein.

The semiconductor package A1 of the present invention basically has the following structure. That is, a metal plate 1 having a substantially rectangular shape and a screw mounting portion 1a formed by forming a through hole in an overhanging portion formed so as to extend to the outside, and a metal plate 1 on the upper surface of the metal plate 1 A ceramic substrate 2 having main surfaces joined to each other and a mounting portion 2a on which the semiconductor element C is mounted is provided on the upper main surface, and the mounting portion 2a is surrounded by the metal plate 1 or the outer peripheral portion of the upper surface of the ceramic substrate 2. The frame body 3 is attached in such a manner that the mounting portion 3a of the input / output terminal 4 formed of a through hole or a cutout portion is formed on the side portion, and the input / output terminal 4 fitted in the mounting portion 3a. It is a composition.

The metal plate 1 of the present invention is made of Cu-W alloy or Fe.
A ceramic substrate 2 made of a metal material such as —Ni—Co alloy is provided on the upper surface, a mounting portion 2a for mounting the semiconductor element C is provided on the ceramic substrate 2, and the mounting portion 2a is surrounded. The frame 3 having the mounting portion 3a on its side is attached via a brazing material such as Ag brazing. The metal plate 1 and the ceramic substrate 2 are semiconductor elements C
Functions as a heat transfer medium that efficiently transfers the heat generated by the semiconductor element C to the metal radiator plate D of the external electric circuit board when the element is mounted and fixed on the upper surface of the mounting portion 2a and operated.
Further, the metal plate 1 is fixed by inserting a screw into the screw hole 1b of the screw mounting portion 1a and screwing it to the external electric circuit board.

The metal plate 1 is made of, for example, Fe-Ni-Co.
When it is made of an alloy, it is formed into a predetermined shape by subjecting an ingot of this alloy to metal working such as rolling and pressing. At this time, a metal layer such as a Ni layer having a thickness of 0.5 to 9 μm or a gold (Au) layer having a thickness of 0.5 to 5 μm is deposited on the surface by a metal film forming method such as a plating method. And good.

In the present invention, as shown in FIG. 2, the screw mounting portion 1a has a short side 1 at each end of each long side 1A of the metal plate 1.
A through hole (screw hole 1b) is formed in the tip end portion 1c of the overhanging portion formed to extend outward in a direction parallel to B, and a long side is formed on the short side 1B side of the overhanging portion. A substantially L-shaped notch F formed by notching from the side 1A to the vicinity of the through hole is formed, and the notch F has an angle θ of a corner 1f near the through hole of 45 to 90 °. The length Fa in the direction parallel to the short side 1B is 1 to 5 mm.

Since the semiconductor package A of the present invention has the above-mentioned structure, the tip end portion 1c of the screw mounting portion 1a fixed to the heat dissipation plate D is aligned with the long side 1 due to the thermal expansion of the heat dissipation plate D.
It moves so as to be pulled in the outward direction K in a direction substantially parallel to A, but at that time, the corner portion 1 is formed in the portion of the base 1d near the tip 1c.
Since there is f, the corner portion 1f relatively easily opens slightly along with the movement of the tip portion 1c to relieve the stress. As a result, it becomes difficult for a large tensile stress to act on the semiconductor package A.

Thus, as the tip 1c moves in the outward direction K, the portion of the base 1d near the tip 1c can move relatively easily. This is because the internal stress concentrates on the corner portion 1f, but since the angle θ of the corner portion 1f is 45 to 90 °, the corner portion 1f is caused by the tensile stress acting in the outward direction K.
Is easier to open. As a result, the corner portion 1f has a smaller resistance to bending of the base portion 1d and the tip portion 1c and becomes easier to bend, and due to this bendability, the corner portion 1f and the tip portion 1c absorb stress. as a result,
Large tensile stress does not act on the semiconductor package A1,
Therefore, almost no tensile stress acts on the ceramic substrate 2.

When the operation of the semiconductor element C is stopped and heat is no longer generated, the screw mounting portion 1a returns to the state before heating so that the stretched spring returns to the original state, and at this time, the semiconductor package A1 is also returned. Almost no stress is applied. That is, according to the semiconductor package A1 of the present invention, the semiconductor element C is housed to form a semiconductor device, and even if the semiconductor device C is joined to the heat dissipation plate D of the external circuit board by screwing and is operated to generate heat, the semiconductor package A1 is large. Almost no stress acts.

When the angle θ of the corner 1f exceeds 90 °,
The corner portion 1f becomes difficult to open. Therefore, a large tensile stress acts on the semiconductor package A1, and the ceramic substrate 2
In some cases, the semiconductor element C may be cracked. When the angle θ is less than 45 °, excessive concentration and relaxation of stress repeatedly occur in the corner portion 1f when the operation and stop of the semiconductor device are repeated, and as a result, cracks occur in the corner portion 1f. Therefore, it may not be possible to firmly fix the semiconductor package A1 to the external electric circuit device.

Further, the length Fa of the notch F in the direction parallel to the short side 1B, that is, the length of the base 1d is 1 to 5 mm, and the width of the base 1d is about several mm. If the length Fa is less than 1 mm, the rigidity of the screw mounting portion 1a will not be appropriately reduced even if the angle θ of the corner portion 1f is within the range of the present invention. Therefore, cracks may occur in the ceramic substrate 2. Further, when the length Fa exceeds 5 mm, it becomes difficult to firmly fix the semiconductor package A1 to the heat dissipation plate D of the external electric circuit board by screwing the screw mounting portion 1a. As a result, the heat dissipation efficiency may deteriorate and the semiconductor element C may be thermally destroyed.

Fe-Ni-Co is formed on the upper surface of the ceramic substrate 2 on the metal plate 1 having the screw mounting portion 1a.
A mounting portion 3 for the input / output terminal 4, which is made of a metal material such as an alloy or Fe-Ni alloy and has a through hole or a cutout portion on its side.
The frame body 3 having a has Ag so as to surround the mounting portion 2a.
It is joined with a brazing material such as brazing. When the frame body 3 is made of, for example, an Fe—Ni—Co alloy, it is formed into a predetermined shape by subjecting the ingots of these alloys to metal working such as rolling and pressing similarly to the metal plate 1.
In order to prevent oxidative corrosion, a metal layer such as a Ni layer having a thickness of 0.5 to 9 μm or an Au layer having a thickness of 0.5 to 5 μm is deposited on the surface by a thin film forming method such as a plating method. It's good to let me.

Further, the input / output terminal 4 for inputting / outputting a high frequency signal between the semiconductor element C and the external electric circuit board is fitted and attached to the inner peripheral surface of the mounting portion 3a with a brazing material such as Ag solder. It The input / output terminal 4 is provided with a metallization layer 4a for transmitting high frequency signals.

The input / output terminal 4 is composed of an insulative ceramic substrate and a conductive metallization layer 4a deposited thereon.
The semiconductor package A1 has a function of maintaining airtightness inside and a function of inputting / outputting a high frequency signal between the semiconductor package A1 and the external electric circuit board.
The material of the ceramic substrate is selected from ceramic materials such as Al ₂ O ₃ ceramics and aluminum nitride (AlN) ceramics according to characteristics such as dielectric constant and thermal expansion coefficient.

The input / output terminal 4 is made into a paste by adding and mixing an appropriate organic binder or solvent to the raw material powder, and this paste is formed into a ceramic green sheet which is a ceramic substrate formed by the doctor blade method or the calendar roll method. W, molybdenum (Mo), manganese (M
n) and the like, an organic solvent, and a metal paste to be the metallized layer 4a obtained by adding and mixing the solvent are printed and applied in a desired pattern shape by a conventionally known screen printing method,
It is made by sintering at a high temperature of about 1600 ° C.

On the upper surface of the metallized layer 4a outside the frame body 3, a material having a coefficient of thermal expansion similar to that of the ceramic substrate of the input / output terminal 4 is used in order to strengthen the bonding with the input / output terminal 4. The lead terminals (not shown) are joined with a brazing material such as Ag solder. For example, when the ceramic substrate of the input / output terminal 4 is made of Al ₂ O ₃ ceramics, the lead terminal is preferably made of a metal material such as Fe—Ni—Co alloy or Fe—Ni alloy, which causes stress due to the difference in thermal expansion. As a result, problems such as peeling off of lead terminals are less likely to occur.

On the upper surface of the frame body 3 to which the input / output terminals 4 are attached, a metallic lid body 5 made of Fe-Ni-Co alloy or the like, or a ceramic body made of Al ₂ O ₃ ceramics, AlN ceramics or the like is used. The lid 5 is joined, and the lid 5 hermetically seals the semiconductor element C inside the semiconductor package A1.

Both the semiconductor element C and the frame 3 are attached to the ceramic substrate 2, and the electrodes of the semiconductor element C and the wiring conductors (not shown) on the upper surface of the ceramic substrate 2 are electrically connected by bonding wires (not shown). And the semiconductor element C and the metallized layer 4a on the input / output terminal 4 are also electrically connected by a bonding wire.

The ceramic substrate 2 is manufactured in the same manner as the input / output terminal 4. That is, an appropriate organic binder or solvent is added to the raw material powder to form a paste, and the paste is formed by a doctor blade method or a calendar roll method into a ceramic green sheet to be a ceramic substrate. It is prepared by printing and applying a metal paste to be a wiring conductor obtained by adding and mixing an organic solvent and a solvent to the powder by a conventionally known screen printing method in a desired pattern shape and sintering at a high temperature of about 1600 ° C. It

In the semiconductor device of the present invention, the semiconductor package of the present invention, the semiconductor element C mounted on the mounting portion 2a and electrically connected to the input / output terminal 4, and the upper surface of the frame 3 are bonded. And a cover 5 that is closed. Specifically, the semiconductor element C is bonded and fixed to the mounting portion 2a with an adhesive such as glass, resin, or brazing material, and the electrode of the semiconductor element C is bonded with the ceramic substrate 2 or the input / output terminal via the bonding wire. 3 electrically connected to the wiring conductor, metallization layer,
Thereafter, the lid body 5 is joined to the upper surface of the frame body 3 by an adhesive such as glass, resin, brazing material, or seam welding, so that the lid body 5, the frame body 3, the input / output terminals 4, the ceramic substrate 2, etc. The semiconductor device is a product in which the semiconductor element C is housed inside the semiconductor package A1.

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the present invention. For example, the semiconductor element may be an optical semiconductor element, and in this case, a tubular fixing member for fixing an optical fiber is attached to a side portion of the frame body and functions as an optical semiconductor device.

[0038]

As described above, according to the present invention, the screw mounting portion formed by forming the through hole in the overhanging portion formed so as to extend to the outside of the corner of the substantially rectangular metal plate has the long sides of the metal plate. Through-holes are formed at the tips of the overhangs that are formed so as to extend outward in the direction parallel to the short sides at both ends, and the sides on the short sides of the overhangs penetrate from the long sides. A notch is formed by cutting out up to the vicinity of the hole so that a corner is formed near the through hole. The notch has a corner near the through hole of 45 to 90 °, which is short. Since the length of the inner portion parallel to the side is 1 to 5 mm, the semiconductor element is housed in the semiconductor package to form a semiconductor device, and this semiconductor device is screwed and fixed to the heat dissipation plate of the external electric circuit board. When the semiconductor device is operated, the heat radiation of the semiconductor element causes thermal expansion of the heat dissipation plate and the semiconductor device experiences tensile stress. Receiving and can effectively prevent the ceramic substrate and the semiconductor element is destroyed. Further, when the frame body is directly attached to the metal plate, it is possible to prevent breakage of the input / output terminal fitted to the attachment portion of the frame body. As a result, the hermeticity of the semiconductor package is not impaired, and the semiconductor element can be operated normally and stably for a long period of time.

The semiconductor device of the present invention is bonded to the upper surface of the frame body with the semiconductor element housing package of the present invention, the semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminals. By providing the lid, it is possible to provide a highly reliable semiconductor device capable of operating the semiconductor element normally and stably for a long period without causing cracks or oxidative corrosion in the semiconductor element.

[Brief description of drawings]

FIG. 1 shows an example of an embodiment of a semiconductor package of the present invention, (a) is a plan view of the semiconductor package,
(B) is sectional drawing in the GG 'line of (a).

FIG. 2 is an enlarged plan view of a main part of the semiconductor package of FIG.

3A is a plan view of a conventional semiconductor package, FIG.
(B) is a sectional view taken along the line HH 'of (a).

[Explanation of symbols]

1: Metal plate 1a: Screw mounting part 1b: screw hole 1c: Tip of screw mounting part 1d: Base of screw mounting part 2: Ceramic substrate 2a: Placement part 3: frame 3a: Input / output terminal mounting part 4: Input / output terminal A: Semiconductor package C: Semiconductor element

Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 23/02-23/10 H01L 23/40 H01L 23/48 H01L 33/00

Claims (2)

(57) [Claims] 1. A metal plate having a substantially rectangular shape and having a screw attachment part formed by forming a through hole in an overhanging part formed so as to extend to the outside at a corner, and a metal plate having a lower surface on the upper surface thereof. A ceramic substrate provided with a mounting portion on which the side main surfaces are joined and a semiconductor element is mounted on the upper main surface, and the mounting portion is surrounded by an outer peripheral portion of the metal plate or the upper surface of the ceramic substrate. A package for storing a semiconductor element, comprising a frame body which is attached and has an input / output terminal mounting portion formed of a through hole or a cutout portion on a side portion, and an input / output terminal fitted in the mounting portion. The screw attachment portion is formed by forming the through hole at a tip end portion of the overhanging portion formed at both ends of each long side of the metal plate so as to extend outward in a direction parallel to the short side. And from the long side to the vicinity of the through hole on the short side of the overhang portion. , A corner is formed near the through hole
Notch formed by cutting out so that is formed, notch portion, the corner portion of the through hole near a 45 to 90 °, the length of the inner parallel to the short side portion A package for housing a semiconductor element, which is 1 to 5 mm. 2. The semiconductor element housing package according to claim 1, the semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output terminals, and joined to the upper surface of the frame body. A semiconductor device comprising: a lid.