JP3253002B2 - Processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to relates to, for example, processing device for forming a film on the surface of a semiconductor wafer.

[0002]

2. Description of the Related Art In general, a semiconductor device tends to have a multilayer wiring structure in response to recent demands for higher density and higher integration. In this case, a lower device and an upper aluminum wiring are required. Embedding technology such as a contact hole as a connection portion with the via and a via hole as a connection portion between the lower aluminum wiring and the upper aluminum wiring has become important in order to make an electrical connection between them. It is preferable to use an inexpensive and highly conductive material, for example, aluminum, for filling the contact holes and via holes, and it is highly directional to eliminate the occurrence of voids due to the technical restriction of filling holes. CVD (Chemi) with good step coverage instead of film formation by sputtering
It is desired to form a film by cal vapor deposition. Examples of such a metal thin film forming apparatus include JP-A-6-267951 and JP-A-6-267951.
An apparatus disclosed in, for example, Japanese Patent No. 283446 is known.

In order to form an aluminum-CVD film,
Generally, DMAH which is an organic metal gas is used as a processing gas.
(Dimethylaluminum hydride), which has a viscosity of 8,000 to 10,000 c at room temperature.
It is very high (p (centipoise)) and is in the form of a syrup, and is extremely difficult to handle because it reacts violently with water and oxygen in the air and ignites.

Here, a conventional general film forming apparatus using thermal CVD will be described. As shown in FIG. 9, for example, a heater 4 and an electrostatic chuck are provided in a cylindrical processing vessel 2 made of aluminum. A mounting table 8 having a built-in 6 is provided, and a semiconductor wafer W to be processed is mounted on the upper surface of the mounting table 8. This mounting table 8
A shower head 10 for injecting and introducing a processing gas is provided in opposition to the above, and a processing gas for film formation formed by evaporating DMAH is introduced into the processing container 2. It is supposed to. This processing gas causes the aluminum film to be heated C on the heated wafer surface.
The film is formed by VD.

[0005] On the side wall of the processing container 2, a gate valve 12 which can be opened and closed for loading and unloading wafers into and from the container is provided. Also, at the bottom 2A of the processing container 2,
An appropriate number of exhaust ports 14 are provided, and these exhaust ports 14 are connected in common, and a turbo molecular pump 16
A vacuum pumping system 20 provided with a dry pump 18 and the like is connected to evacuate the processing chamber 2.
During the film forming process, the vaporized gas of DMAH is supplied at a predetermined flow rate from the shower head 8 as described above, and the wafer W
Is heated to a predetermined temperature and the process pressure is maintained at a predetermined value to form an aluminum metal film.

[0006]

The electrostatic chuck 6 has a processing temperature of 200 to 250 ° C. at the time of forming an aluminum metal film. Since such a chuck cannot be used, a ceramic material having high heat resistance, for example, an electrostatic chuck made of alumina is used.
However, since this kind of electrostatic chuck made of alumina is generally formed by integrally forming the chuck electrode and the heater together in alumina,
The manufacturing process becomes considerably complicated and the product itself becomes expensive,
Moreover, even if either the chuck or the heater breaks, the entire expensive mounting table must be replaced.
Maintenance costs were also high.

Furthermore, aluminum film formation by DMAH has the property of adhering to a conductive substance at a temperature of 100 ° C. or higher, but the lead wires 22 and 23 for supplying power to the heater 4 and the electrostatic chuck 6 generally have The lead wire is inserted through the bellows to prevent the aluminum film that causes particles from adhering to the bellows because it is provided so as to crawl inside the processing container. Must be covered by
There is a problem that the device configuration becomes very complicated. The present invention has been devised in view of the above problems and effectively solving them. An object of the present invention is to provide a processing device that having a mounting table for the structure simple deposition.

[0008]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a processing apparatus for performing vacuum processing on an object placed on a mounting table in a processing container capable of being evacuated. , the mounting table is constructed by joining an electrostatic chuck comprising embedding the chuck electrode in the thin plate of non-conductive member, and a mounting table main body made of non-conductive member having a heating element Rutotomoni The said electrostatic chuck and the mounting table
The main body is joined at its peripheral edge, and
A space is provided between the electrostatic chuck and the electrostatic chuck .

The present invention, a chuck electrode as described above, for example, an electrostatic chuck comprising embedded in a ceramic, having outgoing heat body, joining them consisting mounting table body than for example ceramics made to the individual Thus, a mounting table is formed. Therefore, since each member is individually manufactured, it can be easily manufactured. Further, even if one of the members is damaged, it is sufficient to replace only the damaged part without discarding the whole. Also, keep the temperature detecting means provided in the center portion of the mounting table, thereby to detect the temperature of the mounting table to control the temperature of the outgoing hot body. In this case , by dividing the heat generating body into a plurality of zones and performing temperature control for each zone, highly accurate temperature control can be performed.

Furthermore, the mounting table is supported from the bottom of the processing container to the inside of the container by a hollow cylindrical leg which is hermetically sealed, and a power supply lead wire is inserted through the leg. In addition, it is possible to prevent film deposition from adhering to the lead wire without taking complicated measures for preventing film deposition.

[0011]

DETAILED DESCRIPTION OF THE INVENTION Hereinafter, will be described in detail with reference to the accompanying drawings of an embodiment of a locking Ru processing apparatus according to the present invention. Figure 1 is a schematic plan view illustrating a cluster tool apparatus using the processing device engaged Ru in the present invention, FIG. 2 is a configuration diagram showing a processing apparatus of the present invention, enlarged view Figure 3 showing the mounting table 4 FIG. 5 is a view showing an assembled state of the mounting table, FIG. 5 is a plan view showing a resistance heating element, and FIG. 6 is a plan view showing an electrode for an electrostatic chuck. In this embodiment, a case where a semiconductor wafer is used as an object to be processed and an aluminum film is formed as a metal film on the surface by thermal CVD processing will be described as an example. First, the cluster tool apparatus is described which incorporates a processing device of the present invention with reference to FIG. Here, a film forming processing apparatus is used as the processing apparatus.
Will be described as an example.

As shown in FIG. 1, the cluster tool device 24 has a common transfer chamber 26 formed in an octagonal container shape, for example, made of aluminum at its center, and a first and a second cassette around its periphery. Chambers 28 and 30, water removal treatment device 32, gas component removal treatment device 34, oxide film removal treatment device 36, first and second film deposition treatment devices 3 according to the present invention
8, 40 and the cooling processing device 42 are connected via gate valves G1 to G8 which can be opened and closed, respectively.

The moisture removing device 32 is a device for heating the semiconductor wafer to remove moisture and the like adhering to the surface thereof, and the oxide film removing device 36 is formed on the wafer surface after removing the moisture. This is a processing apparatus for removing a native oxide film by etching, and uses, for example, H ₂ gas (in the case of a blanket) or BCl ₃ gas (in the case of a selective) as an etching gas depending on the type of aluminum film formed in a later step. The gas component removal processing device 34 is a processing device that completely separates and removes the gas components remaining on the wafer surface by heating or ultraviolet irradiation when a harmful gas is used in the above-described etching. Device 3
Numerals 8 and 40 denote processing devices for performing aluminum CVD film formation on the wafer surface, and a cooling processing device 42 for cooling the wafer after film formation to a handling temperature. The first and second cassette chambers 28 and 30 are provided with gate doors GD1 and GD2 for loading and unloading a cassette C capable of accommodating, for example, 25 wafers W, which can be opened and closed, respectively. , 8 are provided with a cassette table (not shown) so as to be able to move up and down. Further, the cassette chambers 28 and 30 are provided with an inert gas, for example, a N ₂ gas supply,
Evacuation is possible.

In the common transfer chamber 28, a rotary positioning mechanism 44 for positioning the wafer W taken therein,
A transfer arm 46 composed of an articulated arm mechanism capable of bending and stretching and rotating while holding the wafer W is disposed, and by bending and rotating this, a wafer is loaded / unloaded between devices and chambers. It is possible to do. The common transfer chamber 26 is connected to a gas supply system 48 for supplying an inert gas, for example, N ₂ gas, and a vacuum evacuation system 54 having, for example, a turbo molecular pump 50 and a dry pump 52 interposed therebetween. Can be evacuated to a high vacuum. The water removing device 32 is provided with a mounting table (not shown) having a heater in a processing container which can be evacuated, and the wafer W is mounted on the mounting table at, for example, 300 ° C. The heating is performed to the extent that water and the like adhering to the wafer surface are removed.

The above-mentioned oxide film removal processing device 36 is, for example, R
The apparatus is configured as an IE (reactive ion etching) plasma apparatus, which generates plasma using a high frequency of 13.56 MHz, for example, and removes a natural oxide film adhered to the wafer surface by etching. Here, when a blanket aluminum film is formed in a later step, an H ₂ gas is used as an etching gas. When a selective aluminum film is formed, for example, a BCl ₃ gas is used as an etching gas. When using the BCl ₃ gas, when the BCl ₃ gas is performed an aluminum film remain attached to the wafer surface, because the electrical properties deteriorate, above in order to completely remove the BCl ₃ gas The used gas component removal processing device 34 is used.

The film forming apparatuses 38 and 40 according to the present invention
A metal thin film, for example, an aluminum film,
D, which is a film forming apparatus, and the film forming apparatuses 38 and 40 will be described with reference to FIGS. Since the two film forming apparatuses 38 and 40 have the same configuration, the first film forming apparatus 38 will be described as a representative here, and the configuration of the second film forming apparatus 40 will be described. Omitted. The film forming apparatus 38 is configured as a thermal CVD film forming apparatus, and has a processing container 56 formed into a cylindrical shape by, for example, aluminum. A feed line insertion hole 58 is formed at the center of the bottom 56A of the processing container 56, and a peripheral portion is provided with a vacuum pump 64, for example, a vacuum pumping system 64 provided with a turbo molecular pump 60 and a dry pump 62. A connected exhaust port 66 is provided so that the inside of the container can be evacuated. A plurality of the exhaust ports 66 are provided on the container bottom 56A, for example, four on the same circumference at equal intervals.
Each of the exhaust ports 66 is provided in common with each other by the vacuum exhaust system 64.

A non-conductive material,
For example, a disk-shaped mounting table 68 made of alumina is provided, and a hollow cylindrical leg 70 extending downward is integrally formed at the center of the lower surface of the mounting table 68. The lower end of the leg 70 is Around the power supply line insertion hole 58 of the container bottom 56A, a sealing member 72 such as an O-ring is interposed with a bolt 74 or the like to hermetically attach and fix it. Therefore, the inside of the hollow leg 70 is opened to the outside, and the inside of the processing container 56 is airtight. The mounting table 68 includes, for example, S
A resistance heating element 76 made of carbon coated with iC is embedded, and a semiconductor wafer W as an object to be processed placed on the upper surface side can be heated to a desired temperature. An upper portion of the mounting table 68 is configured as a thin ceramic electrostatic chuck 78 in which a chuck electrode 77 made of a conductive plate such as copper is embedded, and the Coulomb force generated by the electrostatic chuck 78 is used. The wafer W is held by suction on the upper surface.

An insulated power supply lead wire 80 is connected to the resistance heating element 76. The power supply wire 80 is connected to the inside of the cylindrical leg 70 and the power supply line insertion hole without being exposed to the inside of the processing container 56. It is pulled out through 58 and connected to the power supply unit 84 via the open / close switch 81. Further, an insulated power supply lead wire 86 is connected to the chuck electrode 77 of the electrostatic chuck 78, and this lead wire 86 is also exposed in the cylindrical leg 70 and the power supply line without being exposed to the inside of the processing container 56. It is pulled out through the insertion hole 58 and the open / close switch 88
To the high-voltage DC power supply 90. This mounting table 6
For example, a thermocouple 91 is provided at the center of the lead wire 8 as temperature detecting means for detecting the temperature.
3 is also wired in the hollow leg 70. The specific configuration of the mounting table 68 will be described later.

A plurality of lifter holes 92 are provided at predetermined positions in the periphery of the mounting table 68 so as to penetrate vertically, and wafer lifter pins 94 are vertically movable in the lifter holes 92. When the wafer W is loaded and unloaded, the lifter pins 94 are lifted and lowered by a lifting mechanism (not shown) to lift and lower the wafer W. Generally, three such wafer lifter pins 94 are provided corresponding to the peripheral portion of the wafer.

A ceiling plate 98 integrally provided with a shower head 96 is hermetically attached to the ceiling of the processing container 56 via a sealing member 100 such as an O-ring. A processing space S is formed between the mounting table 68 and the mounting table 68 so as to face substantially the entire upper surface of the mounting table 68. This shower head 9
Reference numeral 6 denotes a process gas for introducing a processing gas into the processing container 56 in the form of a shower.
Are formed with a large number of injection holes 102A for ejecting the processing gas.

The ceiling plate 98 is provided with a gas introduction port 104 for introducing a processing gas to the shower head 96, and a supply passage 106 for flowing the processing gas is connected to the introduction port 104. The diffusion plate 1 having a large number of diffusion holes 108 is provided in the shower head 96 for the purpose of diffusing the processing gas supplied from the supply passage 106.
10 is provided, and a cooling jacket 112 for cooling the temperature of this portion to, for example, about 50 ° C. is provided on the side wall of the head in order to prevent the decomposition of the processing gas. For example, hot water is allowed to flow. The shower head 98 and the mounting table 6
8 is set to approximately 10 to 30 mm.

On the side wall of the processing container 56, a cooling jacket 128 for flowing, for example, a cooling medium for cooling the wall surface is provided, and hot water of, for example, about 50 ° C. is made to flow as a cooling medium. Further, a part of the side wall of the container 56 is provided with a wafer transfer port 130, in which the gate valve G6 for communicating with and shutting off the common transfer chamber 26 is provided.

Next, the mounting table 68 which is a feature of this embodiment will be described in detail. As shown in FIGS. 3 and 4, the mounting table 68 includes a mounting table main body 1 including the resistance heating element 76.
32 and an electrostatic chuck 78 provided on the upper portion thereof, and both are manufactured separately and joined by a brazing material 134 such as a glass welding material or copper or silver. That is, the mounting table main body 132 is formed in a substantially disk shape from non-conductive ceramics, for example, alumina, and has a diameter L2 of 8 inches (about 20 mm).
The size is set to about 240 mm, which is slightly larger than the size of the wafer. On the upper surface of the mounting table main body 132, a heater housing recess 136 having a recessed cross section with only a peripheral portion being raised is formed. In the heater housing recess 136, the resistance heating element 76 for heating the wafer W is provided. Is housed.

The resistance heating element 76 is formed, for example, by coating carbon with SiC, and has a certain width as shown in FIG. Provided. The resistance heating element 76 is concentrically divided into a plurality of, for example, an inner zone 76A and an outer zone 76B in the illustrated example, and the resistance heating elements in each zone are connected.

The power supply lead wire 80 drawn from the resistance heating element 76 includes an inner zone 76A.
2 and a pair of outer lead wires 80B drawn from the outer zone 76B. Each of the lead wires 80A and 80B is connected to a power supply section 84 as shown in FIG. One is connected to a + power supply and the other is connected to a − power supply, so that temperature control can be individually performed for each zone. As described above, for example, three lifter holes 92 are arranged at equal intervals on the same circumference at a predetermined position in a portion where the resistance heating element 76 is not provided. Further, a thermocouple tube 138 that accommodates a thermocouple is provided so as to penetrate the center of the mounting table main body 132.

FIG. 7 is a block diagram of the temperature control of the resistance heating element 76.
The detected value is input to a temperature control unit 142 including a microcomputer, for example. The temperature control unit 142 compares the detected value with a preset value, for example, 200 ° C., and controls the power supply unit 84 so that the comparison result becomes zero. 76B is controlled. Here, the power ratio between the inner and outer zones 76A, 76B is predetermined by an experiment in accordance with the detected temperature value of the thermocouple 91, and the in-plane temperature of the wafer is made uniform. . In the illustrated example, the resistance heating element 7 is used.
Although the case where 6 is divided into two zones has been described as an example, the invention is not limited to this. For example, it may be a single zone or may be divided into three or more zones.

The electrostatic chuck 78 is also mounted on the mounting table main body 132.
Is formed of a non-conductive ceramic material, for example, alumina, and is formed into a thin disk shape having the same dimensions as the diameter of the mounting table main body 132. As shown in FIG. 6, a chuck electrode 77 is buried in substantially the entire surface of the electrostatic chuck 78. The chucking electrode 77 has +
Each of the electrode plates 7A is configured as a so-called bipolar electrode separated into a side electrode plate 77A and a negative electrode plate 77B.
7A and 77B are arranged so as to be meshed in a comb shape while maintaining the insulating state.
), A Coulomb force is generated between the two electrode plates 77A and 77B to hold the wafer W by suction. Three lifter holes 92 are also formed in the electrostatic chuck 78, and a thermocouple 91 accommodated in a thermocouple tube 138 is provided at the center of the lifter hole 92 so that the temperature can be detected. I have.

The electrostatic chuck 78 is provided with a backside gas ejection hole 144, and the ejection hole 144 is connected to a gas introduction pipe 146 penetrating the mounting table body 132. For example, H ₂ gas is injected as a side gas into a slight gap between the upper surface of the electrostatic chuck 78 and the back surface of the wafer W to prevent deposition of a film on the back surface of the wafer and use this gas as a heat conducting gas. By functioning, the wafer W can be efficiently heated.

Next, the operation of the embodiment constructed as described above will be described. First, the overall flow of the semiconductor wafer W will be described with reference to FIG. First, since the aluminum film easily reacts with air or moisture to form an oxide film, each of the processing devices 32, 34, 3 including the common transfer chamber 26 is formed.
When not used, 6, 38, 40 and 42 are maintained at a high vacuum of, for example, about 5 × 10 ⁻⁶ Torr as a base pressure to prevent formation of a natural oxide film.

When an unprocessed semiconductor wafer W is loaded from outside into the first cassette chamber 28 through the gate door GD1 in a state where it is accommodated in the cassette C, it is sealed and the first cassette chamber 28 is closed. Vacuum to the adjusted base pressure. When the base pressure is reached, the gate valve G1
Is opened and the common transfer chamber 2 is maintained at the base pressure in advance.
The transfer arm 46 in 6 is extended, and one unprocessed wafer W is taken out, and the wafer W is aligned by detecting the orientation flat of the wafer by the rotation positioning mechanism 44. The wafer W after the alignment is carried again into the moisture removal processing device 32 which has been preliminarily adjusted to the base pressure through the gate valve G3 which has been opened using the transfer arm 46, where the wafer W is heated. Vaporizes and removes moisture and the like adhering to the wafer surface.

Next, the wafer W from which water has been removed is carried into the oxide film removal processing device 36, which is maintained at the base pressure in advance, through the gate valve G5, and adheres to the wafer surface by etching. Remove the native oxide film.
Here, when a selective aluminum film is formed in a later step, for example, BCl ₃ is used as an etching gas.
When a gas is used to form a blanket aluminum film, for example, H ₂ gas is used as an etching gas. When BCl ₃ gas is used as an etching gas, Cl ions and B ions, particularly Cl ions, have an adverse effect on the electrical characteristics of the aluminum film, so that these ions must be completely removed from the wafer surface. Therefore, the wafer W after etching using BCl ₃ gas is used.
Is then carried into the gas component removal processing device 34, which has been preliminarily set to the base pressure via the gate valve G4, where the Cl ions are excited by heating and irradiation with ultraviolet light, and these ions are separated from the wafer surface. Exclude.

Next, the wafer W from which the gas components have been removed is introduced through the gate valve G6 or G7 into the first or second film forming processing apparatus 38 or 40 which has been previously set to the base pressure. As described above, the two film forming processing devices 38,
The reason for providing 40 is to improve the throughput in view of the time required for the film forming process. Also, if in the previous oxidation removal equipment 36 using the H ₂ gas rather than BCl ₃ gas as an etching gas, a wafer without going through the gas component removal processing unit 34, directly the first or the second It is carried into the film forming apparatus. For the wafer carried into the film forming apparatus 38 or 40, a gas obtained by vaporizing, for example, DMAH (dimethyl aluminum hydride) is used as a processing gas, and an aluminum film is formed at a predetermined temperature by CVD processing. Will be.

Next, the wafer W after the formation of the aluminum film is carried through the gate valve G8 into the cooling processing device 42 maintained at the base pressure in advance, where it is cooled to a predetermined handling temperature. . Then, the processed wafer W is stored in the cassette C in the second cassette chamber 30 maintained at the base pressure in advance via the gate valve G2. In this way, unprocessed wafers are sequentially flown and processed, and during a film forming process requiring a relatively long processing time, the throughput is improved by using the vacant film forming apparatus.

Next, a process for forming an aluminum film will be described with reference to FIG. The wafer W mounted on the mounting table 68 from which the gas components have been removed or from which the oxide film has been removed is suction-held by the Coulomb force from the electrostatic chuck 78. In this state, the wafer W is heated to a predetermined process temperature, for example, 200 ° C. by the resistance heating element 76, and at the same time, a vaporized gas of DMAH is used as a processing gas in the shower head 96.
Then, the wafer is introduced into the processing space S in the processing container 56, and a CVD film of aluminum is formed on the wafer surface. At this time, the process pressure is maintained at, for example, about 2 Torr, and DMAH is supplied, for example, at about 100 SCCM in gaseous terms.

During the film formation, a coolant of, for example, about 50 ° C. is caused to flow through the cooling jacket 128 provided on the side wall of the processing vessel 56, and is cooled to a safe temperature. Before the processing, the inside of the processing container 56 is evacuated as described above.
4, the base pressure is maintained at about 5 × 10 ⁻⁶ Torr to prevent a natural oxide film from adhering to the surface of the loaded wafer. After the film formation, the vacuum is again applied to a base pressure of 5 × 10 ⁻⁶ Torr. Therefore, it is possible to minimize the attachment of the natural oxide film to the aluminum film immediately after the film formation.

During the film formation, the temperature is detected by the thermocouple 91 provided at the center of the mounting table 68.
0, and based on the detected value, the temperature controller 14
2 controls the power supply unit 84 and the zone 76 of the resistance heating element 76
The power supply amount is controlled for each of A and 76B. Therefore, the mounting table 6
8 can be finely controlled. Since a suitable amount of H ₂ gas is ejected from the back side gas ejection hole 144 as a back side gas into a slight gap between the upper surface of the electrostatic chuck 78 and the back surface of the wafer W, Therefore, it is possible to almost completely prevent deposition of a film which causes generation of particles on the back surface of the wafer.

Further, the processing gas of DMAH is approximately 100
It has a characteristic that it easily adheres to the surface of the conductive member having a temperature of not less than ° C.
A, 80B and a lead wire 86 for supplying power to the chucking electrode 77 are accommodated in a hollow cylindrical leg 70 which is airtightly partitioned from the inside of the processing container 56, and these lead wires come into contact with the film forming gas. As a result, it is possible to prevent a film that causes particles from adhering to these lead wires.

The electrostatic chuck 78 or the resistance heating element 76
If any one of them is broken, instead of replacing the entire mounting table 68, the brazing material 134 is melted to separate the electrostatic chuck 78 and the mounting table main body 132, and only the failed one is repaired. Or replace it. When the mounting table 68 is formed as described above, the mounting table main body 13 having the electrostatic chuck 78 and the resistance heating element 76 separately manufactured is provided.
2 only needs to be joined, so that not only the manufacturing process can be simplified and cost can be greatly reduced, but also during maintenance, for example, only one of the failed units can be replaced. Maintenance costs can be greatly reduced. In the above embodiment, the atmosphere in the processing space S passes through the outer periphery of the mounting table 68, directly communicates with the space below the mounting table 68, and is evacuated therefrom through the exhaust port 66. As shown in FIG.
8 may be movably provided to quickly adjust the pressure in the processing space S.

That is, the processing space S above the mounting table 68 is separated by a predetermined distance between the disk-shaped mounting table 68 and the inner peripheral wall 56B of the cylindrical processing container 56.
1 that communicates with each exhaust port 66 of the container bottom 56A
50 is formed in a ring shape so as to surround the outer periphery of the mounting table 68. Then, the ring-shaped pressure regulating valve element 1 set to a size that can be accurately fitted into the width L3 of the ventilation port 150 is inserted into the ventilation port 150.
48 is provided movably in the vertical direction. That is,
The ring-shaped pressure adjusting valve body 148 is provided with an elevating rod 152 extending downward, and the elevating rod
2 penetrates the rod hole 154 provided in the container bottom 56A and penetrates the rod hole 154 provided in the bottom 56A.
A extends below A. Such a lifting rod 152
A plurality of, for example, three, are provided at equal intervals along the circumferential direction of the valve element 148, and at the lower end of each lifting rod 152, an actuator 156 whose movement amount can be controlled is provided. 152 can be moved up and down in synchronization with each other. The lower ends of the lifting rods 152 may be commonly connected by a connecting member (not shown), and the connecting members may be moved up and down by the actuator 156 to move the rods. According to this, the actuator 15
The number of 6 is small.

The width L3 of the vent 150 is set to about 0.5 to 3 mm, for example, while the diameter of the mounting table 68 corresponding to an 8-inch wafer is about 240 mm.
A bellows-like bellows 158 is interposed between each rod hole 154 and the elevating rod 152 inserted therein, and the elevating rod 152 is moved up and down while maintaining the airtightness in the processing container 56. It is possible to do. The pressure regulating valve element 148 is formed of the same material as the mounting table 68, for example, alumina, and has an inner end surface formed as a tapered surface 148A that extends obliquely downward in the center direction, and matches the tapered surface 148A. The peripheral portion of the mounting table 68 is also formed as a tapered surface 68A that is directed obliquely downward in the center direction so as to make surface contact. Further, the outer end surface of the pressure adjusting valve element 148 is slightly separated from the inner wall of the container and rises and falls along the inner wall. By providing the movable pressure adjusting valve body 148 in the ventilation port 150 in this way, it can function as a throttle valve, and the pressure adjusting valve body 148 moves up and down,
The exhaust conductance can be changed by appropriately adjusting the opening of the ring-shaped vent 150.

As described above, by movably providing the pressure adjusting valve element 148 exhibiting the function of the throttle valve on the outer peripheral side of the mounting table 68, the processing space S, which is the pressure control target area, and the pressure adjusting valve element 148 are connected. Because the distance between them is very close,
The vent 150 associated with the upward and downward movement of the pressure adjusting valve element 148.
Changes in the opening degree cause pressure fluctuations in the processing space S with almost no time delay. Therefore, the response of the pressure adjustment is very good, and it is possible to greatly improve the response. In the above-described embodiment, the case where the aluminum metal film is formed as the film is described. However, the present invention is not limited to this case.
The present invention can be applied to the case of forming a film of i, TiN, W, Cu, SiO ₂ or the like.

Although the case where the film forming apparatus is incorporated in the cluster tool apparatus has been described as an example, the present invention is not limited to this, and it is needless to say that the present invention can be applied to a case where this film forming apparatus is used alone. It is. Further, the present invention is not limited to the case where a film is formed on a semiconductor wafer, and may be another object to be processed, such as LC
Needless to say, the present invention can be applied to the case of forming a film on a D substrate or a glass substrate.

[0043]

As described in the foregoing, according to the processing apparatus of the present invention, it is possible to exert effects excellent as follows. And the electrostatic chuck, since to form the table by joining the mounting table body having an outgoing heat body, the structure can be simplified, by joining the two after producing cheap individual member manufacturing cost And the overall manufacturing cost can be significantly reduced. Further, by allowing individual temperature control by dividing the outgoing heat body into a plurality of zones, texture fine temperature control can be performed for each zone, the in-plane uniformity of the temperature of the object Can be improved.

Further, by flowing a backside gas over the surface of the electrostatic chuck, it is possible to prevent the processing gas from entering the back surface of the object to be processed, and to prevent the deposition of a film which causes particles from adhering thereto. Not only can this be prevented, but by making this gas function as a heat conducting gas, the heat conductivity from the mounting table to the object can be improved. Further, a lead wire for supplying power to the electrostatic chuck and fever body or the like,
By penetrating the inside of the processing container into the hermetically partitioned hollow cylindrical leg, it is possible to prevent deposition of a film that causes particles on the lead wire.

[Brief description of the drawings]

1 is a schematic plan view illustrating a cluster tool apparatus using the engagement Ru processing apparatus according to the present invention.

2 is a block diagram showing a processing apparatus of the present invention.

FIG. 3 is an enlarged configuration diagram showing a mounting table.

FIG. 4 is a diagram showing an assembled state of a mounting table.

FIG. 5 is a plan view showing a resistance heating element.

FIG. 6 is a plan view showing an electrode for an electrostatic chuck.

FIG. 7 is a diagram showing a temperature control block of a resistance heating element.

FIG. 8 is a partial configuration diagram illustrating a film forming apparatus in which a pressure adjusting valve body is provided on an outer peripheral side of a mounting table.

FIG. 9 is a schematic configuration diagram showing a conventional film forming apparatus.

[Explanation of symbols]

 Reference Signs List 24 Cluster tool device 26 Common transfer chamber 32 Water removal treatment device 34 Gas component removal treatment device 36 Oxide film removal treatment device 38 First film formation treatment device 40 Second film formation treatment device 42 Cooling treatment device 56 Processing vessel 68 Mounting table 76 Resistance heating element 77 Chuck electrode 77A + side electrode plate 77B-side electrode plate 78 Electrostatic chuck 80, 86 Lead wire for power supply 91 Thermocouple (temperature detecting means) 132 Mounting table body 134 Brazing material 144 Back side Gas outlet 146 Gas inlet pipe S Processing space W Semiconductor wafer (workpiece)

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Takashi Mochizuki 2381, Kita-Shimojo, Fujii-machi, Nirasaki-shi, Yamanashi Prefecture Tokyo Electron Yamanashi Co., Ltd. (56) References JP-A-5-13558 (JP, A) JP-A-7-78766 (JP, A) JP-A-6-244114 (JP, A) JP-A-5-44038 (JP, A) JP-A-6-260426 (JP, A) JP-A-5-90165 (JP, A) , A) JP-A-6-69137 (JP, A) JP-A-6-120145 (JP, A) JP-A-6-244119 (JP, A) JP-A 7-106096 (JP, A) 5-33524 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) C23C 16/00-16/56 H01L 21/205 H01L 21/31 H01L 21/68

Claims (6)

(57) [Claims] 1. A processing apparatus for performing vacuum processing on a processing object mounted on a mounting table in a processing container capable of being evacuated, wherein the mounting table includes a chuck in a thin plate- shaped non-conductive member. an electrostatic chuck comprising embedding the use electrode is configured by joining a mounting table main body made of non-conductive member having a heating element Rutotomoni, the electrostatic chuck and the mounting table present
The body is joined at its periphery, and the heating element and the
A processing apparatus, wherein a space is provided between the processing unit and the electrostatic chuck . 2. The chuck electrode comprises a positive electrode plate and a negative electrode plate.
The processing apparatus according to claim 1, wherein the processing apparatus is a bipolar electrode including a side electrode plate. 3. The processing apparatus according to claim 1, wherein a temperature detecting means for measuring a temperature is provided at a central portion of the mounting table. 4. The processing apparatus according to claim 1, wherein the resistance heating element is divided into a plurality of zones and can be individually controlled. 5. A backside gas ejection hole for allowing a backside gas to flow between the electrostatic chuck and the object to be processed. Processing equipment. 6. The mounting table is supported at the bottom of the processing container by a hollow cylindrical leg portion which is airtightly partitioned from the inside of the processing container, and a power supply lead wire is provided in the leg portion. The processing apparatus according to claim 1, wherein the processing apparatus is configured to be inserted.