JP3232473B2 - Projection exposure apparatus and device manufacturing method using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a projection exposure apparatus and a device manufacturing method using the same, and more particularly, to a projection exposure apparatus.
In a so-called stepper, which is an apparatus for manufacturing a semiconductor device such as a C, LSI, magnetic head, or liquid crystal panel, a pattern on a reticle surface, which is an irradiated surface, is illuminated with a light beam having an appropriate illuminance distribution so that high resolution can be easily obtained. It was made.

[0002]

2. Description of the Related Art A recent semiconductor device manufacturing technique requires a resolution pattern line width of, for example, 1 μm as electronic circuits become more highly integrated.
m or less, and there is a demand for an optical projection exposure apparatus having a higher resolution than in the past. Means for improving the resolving power include a method of increasing the NA (numerical aperture) of the optical system by fixing the exposure wavelength, a method of using light having a shorter wavelength as the exposure wavelength, and the like. In addition, a so-called modified illumination method is used in which the illumination method on the reticle surface is changed, that is, the light intensity distribution (effective light source distribution) of the zero-order light formed on the pupil plane of the projection optical system is changed. There is a method for increasing the resolution.

The present applicant has proposed in Japanese Patent Laid-Open No. 267515/1992 an exposure method using this modified illumination method to increase the resolution and a projection exposure apparatus using the same.

[0004]

Generally, the effective light source distribution (light intensity distribution) on the pupil plane of the projection optical system greatly affects the resolution of a pattern image to be projected. For this reason, it has been proposed that current projection exposure apparatuses for manufacturing semiconductor chips perform deformed illumination with a plurality of illumination modes that can illuminate the reticle by an optimal method for each process. In many projection exposure apparatuses, a certain illumination mode A among a plurality of illumination modes is used.
The position of each element of the illumination system is adjusted so that the illuminance unevenness is minimized. However, when the illumination mode was changed to the illumination mode B different from the illumination mode A using the modified illumination method, the illuminance unevenness did not always become the minimum when each element of the illumination system was the same as the illumination mode A.

For this reason, in the illumination mode A in which the respective elements of the illumination system are adjusted, the illuminance unevenness is small and the ability of the exposure apparatus can be exhibited. However, in the illumination mode B, the illuminance unevenness is generated and the exposure apparatus can fully exercise its ability. There was a problem that can not be.

The present invention is directed to a projection exposure apparatus capable of projecting various patterns on a reticle surface onto a wafer surface with high resolution even when the illumination mode is switched to various illumination modes, and a device manufacturing method using the same. The purpose is to provide.

In particular, the present invention uses an optical system having an optical integrator as a secondary light source forming means to illuminate a surface to be illuminated. A projection exposure apparatus capable of illuminating a surface to be illuminated with an appropriate illuminance distribution in various illumination modes such as illumination, and easily exposing and transferring a pattern on a reticle surface onto a wafer surface with a high resolution. It is an object of the present invention to provide a method for manufacturing a device using the same.

[0008]

According to the present invention, there is provided a projection exposure apparatus comprising: (1-1) a light input / output surface, which receives light from a light source on the light incident surface, and a secondary light source on the light output surface side. A light source irradiating the object plane with light from the secondary light source, and a projecting means for projecting the illuminated pattern on the object plane onto an image plane. A rotatable optical element is provided in the vicinity of the secondary light source such that the angle formed with respect to the optical axis coated with a different transmittance depending on the angle of incidence changes.
The illuminance distribution on the object plane is adjusted by rotating the optical element.

In particular, (1-1-1) a plurality of aperture-integrated optical elements in which the optical element is provided with an aperture stop having a predetermined aperture shape, and the apertures of the aperture stop of the plurality of aperture-integrated optical elements are provided. The shapes are different from each other, and one of the stop-integrated optical elements is selected and mounted so as to be insertable / removable in the optical path. (1-1-2) The optical element is arranged with respect to the aperture stop. (1--
1-3) The optical element is characterized by comprising a plane-parallel plate or an optical wedge.

(1-2) A light beam from a light source is guided to an optical integrator in which a plurality of microlenses are two-dimensionally arranged, and a light beam from a light exit surface of the optical integrator is condensed by a light irradiation unit. When illuminating the pattern on the object plane and projecting the pattern on the object plane onto the image plane by the projection optical system, a coating having different transmittance depending on the incident angle was applied in the vicinity of the light exit surface of the optical integrator. It is characterized in that a rotatable optical element whose angle with respect to the optical axis changes is provided, and the illuminance distribution on the object plane is adjusted by rotating the optical element.

In particular, (1-2-1) the optical element has a plurality of aperture-integrated optical elements provided with an aperture stop having a predetermined aperture shape, and the aperture of the aperture stop of the plurality of aperture-integrated optical elements. The shapes are different from each other, and one of the aperture-integrated optical elements is selected and mounted so as to be insertable / removable in the optical path. (1-2-2) The optical element is arranged with respect to the aperture stop. (1-2)
-3) The optical element is characterized by comprising a plane-parallel plate or an optical wedge.

The method of manufacturing a device according to the present invention comprises the following steps: (2-1) guiding a light beam from a light source to an optical integrator comprising a plurality of minute lenses forming a secondary light source, and transmitting the light beam from a light exit surface of the optical integrator. The light beam is condensed by a light irradiating means to illuminate a pattern on the reticle surface, and the pattern is projected and exposed on a wafer surface by a projection optical system. An optical integrator is provided with a rotatable optical element in the vicinity of the light exit surface, the angle of which changes with respect to an optical axis coated with a coating having a different transmittance depending on the incident angle. It is characterized in that the above illuminance distribution is adjusted.

In particular, (2-1-1) the optical element is configured to be rotatable with respect to the aperture stop, and (2-1-2) the optical element is a plane parallel plate or It is characterized by being constituted by an optical wedge.

(2-2) a plurality of aperture-integrated optical elements each having an aperture stop having a predetermined aperture shape provided in the optical element;
The aperture shapes of the aperture stops of the plurality of aperture-integrated optical elements are different from each other, and one of the aperture-integrated optical elements is selected so as to be detachably mounted in the optical path. .

In particular, (2-2-1) the optical element is configured to be rotatable with respect to the aperture stop; (2-2-2) the optical element is a plane parallel plate or It is characterized by being constituted by an optical wedge.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a main part of a first embodiment of the present invention. FIG. 2 is an enlarged explanatory view of a part of FIG.

In the figure, reference numeral 2 denotes an elliptical mirror. Reference numeral 1 denotes an arc tube as a light source, which has a high-luminance light emitting section 1a that emits ultraviolet rays, far ultraviolet rays, and the like. Emitting portion 1a is arranged on the first focal point near neighbor of the elliptical mirror 2. Reference numeral 3 denotes a cold mirror, which has a multilayer film and transmits most of infrared light and visible light of the light from the light emitting portion 1a and reflects most of ultraviolet light. The elliptical mirror 2 forms an image (light source image) 1b of the light emitting unit 1a near the second focal point 4 via the cold mirror 3.

Reference numeral 5 denotes an optical system, which comprises a condenser lens, a zoom lens (variable optical system), and the like, and re-images the light emitting portion image 1b formed near the second focal point 4 on the light incident surface 6a of the optical integrator 6. Let me. The imaging magnification at this time can be changed by configuring the optical system 5 with a zoom lens.

A prism is provided in the optical path of the optical system 5 as needed to adjust the illuminance distribution on the incident surface 6a of the optical integrator 6 in response to deformed illumination described later.

The optical integrator 6 constitutes a fly's eye lens by arranging a plurality of microlenses 6-i (i = 1 to N) two-dimensionally at a predetermined pitch along a plane perpendicular to the optical axis. And a secondary light source is formed near the light exit surface 6b.

Here, the optical integrator 6 has a light incident surface 6a, receives light from the light source 1 on the light incident surface 6a, and forms one element of a secondary light source forming means for forming a secondary light source on the light emitting surface 6b. Make up. Also, elliptical mirror 2, mirror 3,
The optical system 5 constitutes one element of the light source image projecting means for projecting the image of the light source 1 on the light incident surface of the secondary light source forming means.

Reference numeral 7 denotes a variable aperture stop, which includes a stop with a normal circular aperture, on the pupil plane 14 of the projection lens 13 as shown in FIGS. 3A, 3B, 3C and 3D. It consists of various apertures that change the light intensity distribution. Thus, a so-called deformed illumination is performed.

The aperture shown in FIG. 3A is a commonly used aperture stop, and the aperture diameter has a σ value (= NA of the illumination optical system).
/ NA of the projection optical system) is about 0.5 to 0.7. The aperture shown in FIG. 3B has a σ value of 0.3 to 0.1.
The aperture stop has an aperture diameter of about 4, and is used when a phase shift mask is used. The aperture stop shown in FIG. 3C is an aperture stop for annular illumination, and the aperture stop shown in FIG. 3D is an aperture stop for quadrupole illumination, which performs modified illumination for improving resolution and depth of focus. Is a kind of

In this embodiment, the variable aperture stop 7 is 7
The illumination mode is changed by selecting any one of a, 7b, 7c, and 7d. For this reason, the aperture stops 7a to 7d
Is used.

Reference numeral 17 denotes an illuminance unevenness correction plate, which comprises an optical element having a coating (multilayer film) on a transparent substrate whose transmittance or spectral transmittance changes depending on the incident angle.
The uneven illuminance correction plate 17 is held by a holder 18 that is inclined at a predetermined angle with respect to the optical axis La. The holder 18 is rotatable with respect to the optical axis La. Thus, the illuminance unevenness on the irradiated surface is adjusted by changing the incident angle of the light beam on the uneven illuminance correction plate 17 in various ways.

In this embodiment, as shown in FIG. 2, the aperture stop 7, the illuminance unevenness correction plate 17, and the holder 18 are configured as one unit 19. This unit 1
Numeral 9 is easily detachable from the filter exchange mechanism 16 with a diaphragm, and can be exchanged as needed. A plurality of units 19 can be attached to the filter exchange mechanism 16 with aperture, and the unit 19 is arbitrarily selected by rotating the filter exchange mechanism 16 with aperture according to the illumination mode. In the present embodiment, the aperture stop 7, the optical system 5, the illuminance unevenness correction plate 17, and the like constitute one element of a secondary light source adjusting means for changing the light intensity distribution of the secondary light source.

Reference numeral 8 denotes a condenser lens as a condenser lens. 9 is a mirror and 10 is a masking blade. A plurality of light beams emitted from the secondary light source near the light exit surface 6b of the optical integrator 6 are condensed by the condenser lens 8 after passing through the illuminance unevenness correction plate 17, reflected by the mirror 9, and reflected by the masking blade 10. The masking blade 10 is incident and illuminates the opening surface of the masking blade 10 uniformly. The masking blade 10 is composed of a plurality of movable light-shielding plates so that an arbitrary opening shape is formed.

Reference numeral 11 denotes an image forming lens, which is a reticle (object plane) having an opening of the masking blade 10 as an irradiation surface.
An image is formed on the reticle 12, and a required area on the reticle 12 is uniformly illuminated. Here, the condenser lens 8, the mirror 9, the imaging lens 11, and the like constitute one element of light irradiation means for irradiating the object plane with light from the secondary light source.

Reference numeral 13 denotes a projection optical system (projection means) comprising a lens system, and a wafer (substrate) 15 which is an image plane on which a circuit pattern on the reticle 12 is mounted on a wafer chuck.
Reduced projection on the surface. The projection optical system may be configured by a catadioptric system including a reflection system such as a projection mirror in addition to the refraction system. Reference numeral 14 denotes a pupil plane (aperture) of the projection optical system 13.

In the optical system according to the present embodiment, the light emitting section 1
a, the second focal point 4, and the incident surface 6a of the optical integrator 6 have a substantially conjugate relationship. Further, the masking blade 10, the reticle 12, and the wafer 15 are in a conjugate relationship. Further, the aperture stop 7 and the pupil plane 14 of the projection optical system 13 have a substantially conjugate relationship.

In the present embodiment, with the above configuration,
The circuit pattern on the reticle 12 surface is reduced and projected on the wafer 15 surface, and the wafer 15 is exposed by a circuit pattern image. The semiconductor device is manufactured through a predetermined development process.

Next, a method of correcting illumination unevenness on the surface of the wafer 15 by changing the illumination mode by changing the shape of the aperture stop 7 and rotating the illumination unevenness correction plate 17 in this embodiment will be described. .

FIGS. 4A and 4B are explanatory diagrams of optical characteristics (spectral characteristics) of an optical thin film (coating film) used in the illuminance unevenness correction plate 17 in the present embodiment. In the figure, the horizontal axis represents the wavelength, and the vertical axis represents the transmittance T.

FIG. 3 shows the spectral characteristics of an optical thin film having a high transmittance for a specific wavelength. In the drawing, λ ₀ is the exposure wavelength, the solid curve Pa is the incident angle θ = 0, and the dotted curve Pb is the spectral transmittance when the incident angle θ = ε. In general, as the incident angle of an optical thin film increases, the spectral characteristics shift to shorter wavelengths. In the case where the optical thin film has a characteristic such as a curve Pa whose transmittance is inclined with respect to the exposure wavelength, when the incident angle is not 0 °, the spectral characteristic shifts to the shorter wavelength side and becomes a state of a curve Pb. At this time, the exposure light has a transmittance difference ΔT due to a difference in the incident angle to the uneven illuminance correction plate.
Becomes

In this embodiment, the transmittance for exposure light is more sensitively changed by changing the incident angle by using the illuminance unevenness correction plate 17 provided with the optical thin film having the above-described spectral characteristics. That is, as shown in FIG. 5, the illuminance unevenness correction plate 17 is rotated in the optical path to change the incident angle of the light beam, so that the illuminance unevenness at each point Qa, Qb, Qc of the masking blade 10 (wafer surface 15). Are corrected in various ways.

FIG. 5 is an enlarged explanatory view of the optical path near the illuminance unevenness correction plate 17 in FIG. In the figure, the optimizer
An aperture 7 is provided near the exit surface 6b of the optical integrator 6, and forms an arbitrary secondary light source shape. The light beam from the secondary light source passes through the uneven illuminance correction plate 17 and is converged by the condenser lens 8 to illuminate the masking blade (surface to be irradiated) 10. At this time, light beams having the same exit angle from the secondary light source illuminate the same place on the irradiation surface 10. That is, the ray at the exit angle α is the point Qa, and the ray at the exit angle 0 is the point Qa.
b, the light beam having the exit angle γ is focused on the point Qc. Therefore the position Q
When it is desired to lower the illuminance a, the transmittance of the light beam having the emission angle α may be reduced.

For example, it is assumed that the illuminance unevenness at the time of annular illumination using the stop 7 shown in FIG. 3C is as shown in FIG.
In general, the illuminance is high at high image heights. Therefore, as the illuminance unevenness correction plate 17, a film having a characteristic such that the illuminance decreases as the incident angle increases as shown in FIG. 4A is used. When the uneven illuminance correction plate 17 is inserted perpendicular to the optical axis, the uneven illuminance becomes as shown in FIG. When the uneven illuminance correction plate 17 is inserted perpendicularly to the optical axis, the correction amounts of the illuminance at the same image height with respect to the optical axis are substantially equal, so that the illuminance is reduced at both the position Qa and the position Qc in FIG. However, the illuminance is high at the position Qa and low at the position Qc with respect to the center illuminance.

This is because the illuminance non-uniformity is not only the illuminance non-uniformity according to image height (illuminance non-uniformity equal to the optical axis. This is due to the angular characteristics of the antireflection film of the lens), but also asymmetrical non-uniformity (on the image plane). This is because there is illuminance unevenness having a tilt due to the eccentricity of the lens system.

If the illuminance unevenness correcting plate 17 is tilted in the direction of arrow t, the illuminance unevenness correcting plate 17
Is increased, and the angle at which the light beam condensed at the point Qc is incident on the uneven illuminance correction plate 17 is reduced. Then, the transmittance of the light beam condensed on the point Qa decreases, and the point Qa
The transmittance of the light beam condensed on the point c increases, and the point Q
The illuminance of c increases. Thereby, the illuminance unevenness on the irradiation surface 10 is improved as shown in FIG.

In another illumination mode using an aperture such as that shown in FIGS. 3B and 3D, when the illuminance unevenness is such that the higher the image height on the irradiation surface, the lower the illuminance becomes.
As shown in FIG. 4B, by using an illuminance unevenness correction plate coated so that the transmittance increases as the incident angle increases, the illuminance unevenness is quickly corrected. In this way, by using the illuminance non-uniformity correction plate having different spectral characteristics according to each illumination mode, and by controlling the angle of the illuminance non-uniformity correction plate with respect to the optical axis, the illuminance non-uniformity on the irradiation surface is reduced even when the illumination mode is changed. I try to hold it down.

In the present embodiment, the correction of the uneven illuminance at a certain cross section on the image plane is described. Can be corrected. Also, the illumination unevenness correction plate is integrated with the aperture by the holder, but can be easily attached to and detached from the filter exchange mechanism 16 with the aperture, and is mounted by combining another aperture and another illumination unevenness correction plate. According to this, a uniform illuminance can be obtained for all kinds of deformed illumination.

Next, FIGS. 7A to 7C and FIGS.
(C) shows another embodiment such as an uneven illuminance correction plate.
For convenience, the optical thin film for correcting uneven illuminance is shown in FIG.
As shown in (A), it is assumed that a coating is applied such that the transmittance decreases as the incident angle increases.

FIG. 7A shows an embodiment of the holder 18 which can easily control the angle of the illuminance unevenness correction plate 17. The holder 18 is composed of two lens barrels 18a and 18b obtained by cutting a cylinder obliquely.
b can rotate independently with respect to the optical axis.
The illuminance unevenness correcting plate 1 is provided on the exit surface of the exit side barrel 18b.
7 is fixed.

The following describes that the illuminance on the image plane can be corrected by the present mechanism. FIG. 7B is a schematic diagram in which the two sets of lens barrels 18a and 18b are configured alternately and installed on the irradiation surface side of the stop surface. The illuminance distribution at this time is shown in FIG.
It is assumed that the illuminance of the irradiation surface Qa is relatively high as shown in FIG. At this time, the lens barrel 18b on the exit surface side of this embodiment is set at 18
By rotating by 0 degrees (FIG. 7C), the uneven illuminance correction plate 17 is inclined with respect to the optical axis, thereby correcting the uneven illuminance on the irradiation surface 10.

FIG. 8A shows another embodiment in which the angle control mechanism 17 is provided in the illuminance unevenness correction plate itself.
In the present embodiment, as shown in FIG.
Reference numeral 7 denotes two optical wedges 17a and 17b having the same oblique angle. The optical wedges 17a and 17b can rotate independently of each other with respect to the optical axis. In the present embodiment, the optical thin film for correcting the illuminance unevenness includes two optical wedges 17a,
17b is provided on two opposing surfaces. Hereinafter, it will be described that the illuminance on the image plane can be corrected by the present mechanism.

FIG. 8B shows these two sets of optical wedges 17a, 1a.
FIG. 7B is a schematic diagram illustrating a configuration in which a thick portion and a thin portion face each other and are installed on an irradiation surface side of a stop surface. At this time, it is assumed that the illuminance distribution on the irradiation surface Qa is relatively high as shown in FIG. At this time, the optical wedge 1 on the incident side of the present embodiment
When the light 7a is rotated by 180 degrees (FIG. 8C), the transmittance of the light beam condensed at the point Qa when exiting the first optical wedge 17a becomes higher than the state shown in FIG. The transmittance of the light beam focused on the first optical wedge 17a becomes lower than that in the state shown in FIG. Thereby, the illuminance unevenness on the irradiation surface is relatively corrected.

In each of the above embodiments, an example of a projection exposure apparatus using a mercury lamp as a light source has been described. Illumination unevenness can be similarly corrected when a laser light source is used.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described projection exposure apparatus will be described.

FIG. 9 shows a flow of manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD).

In step 1 (circuit design), a circuit of a semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design.

On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 10 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. Step 14 (ion implantation) implants ions into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of the present embodiment, it is possible to easily manufacture a highly integrated semiconductor device which has been conventionally difficult to manufacture.

[0058]

According to the present invention, by setting each element as described above, the illuminance unevenness can be minimized even if the illumination mode is changed variously, and various patterns on the reticle surface can be raised on the wafer surface. A projection exposure apparatus capable of projecting with a resolving power and a method for manufacturing a device using the same can be achieved.

According to the present invention, as described above, when illuminating a surface to be illuminated using an illumination system including an optical integrator as a secondary light source forming means, an optical element having a different spectral characteristic depending on an incident angle is used. This makes it possible to illuminate the illuminated surface with an appropriate illuminance distribution in various illumination modes such as deformed illumination and normal illumination, and to easily expose and transfer a pattern on a reticle surface onto a wafer surface with high resolution. And a device manufacturing method using the same.

[Brief description of the drawings]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

FIG. 2 is an enlarged perspective view of a part of FIG. 1;

FIG. 3 is an explanatory view of a part of FIG. 1;

FIG. 4 is an explanatory diagram of spectral characteristics of the optical element of FIG. 1;

FIG. 5 is an enlarged explanatory view of a part of FIG. 1;

FIG. 6 is an explanatory diagram of uneven illuminance of a surface to be irradiated in FIG. 1;

FIG. 7 is an explanatory diagram of a driving method of the optical element of FIG. 1;

FIG. 8 is an explanatory diagram of a driving method of the optical element in FIG. 1;

FIG. 9 is a flowchart of a device manufacturing method according to the present invention.

FIG. 10 is a flowchart of a device manufacturing method according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ultraviolet light source, such as a mercury lamp 1a Light-emitting part 2 Elliptical mirror 3 Cold mirror 4 Second focus 5, 8, 11 Condenser lens 6 Optical integrator (fly-eye lens) 6a Fly-eye lens lens entrance 6b Fly-eye lens Emission unit 7 Aperture 9 Reflecting mirror 10 Masking blade 12 Reticle 13 Projection lens 14 Projection lens pupil 15 Wafer 16 Filter exchange mechanism with aperture 17 Illumination unevenness correction plate (optical element) 18 Holder

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/20 501

Claims (16)

(57) [Claims] 1. A secondary light source forming means having a light entrance / exit surface, receiving light from a light source on the light entrance surface, and forming a secondary light source on the light exit surface side, and light from the secondary light source. A light irradiating means for irradiating the object plane with light, and a projecting means for projecting a light-irradiated pattern on the object plane onto an image plane, wherein a coating having a transmittance different depending on an incident angle near the secondary light source. A projection optical apparatus, comprising: a rotatable optical element whose angle with respect to an optical axis subjected to the rotation is changed; and an illuminance distribution on the object plane is adjusted by rotating the optical element. . 2. A light beam from a light source is passed through a plurality of micro lenses.
The light is guided to a three-dimensionally arranged optical integrator, a light beam from a light emitting surface of the optical integrator is condensed by light irradiation means, and a pattern on an object plane is illuminated. When projecting on the image plane by the system, a rotatable optical element is provided near the light exit surface of the optical integrator, the angle formed with respect to the optical axis coated with different transmittance depending on the incident angle, A projection exposure apparatus wherein the optical element is rotated to adjust the illuminance distribution on the object plane. 3. A plurality of aperture-integrated optical elements each having an aperture stop having a predetermined aperture shape provided in the optical element, wherein the aperture shapes of the plurality of aperture-integrated optical elements are different from each other; 2. The projection exposure apparatus according to claim 1, wherein one of the stop-integrated optical elements is selected so as to be inserted into and removed from the optical path. 4. An aperture stop type optical element having a plurality of aperture stop type optical elements provided with an aperture stop having a predetermined aperture shape in the optical element, wherein the aperture stop apertures of the plurality of aperture stop type optical elements are different from each other; 3. The projection exposure apparatus according to claim 2, wherein one of the stop-integrated optical elements is selected so as to be inserted into and removed from the optical path. 5. The projection exposure apparatus according to claim 3, wherein the optical element is configured to be rotatable with respect to the aperture stop. 6. The projection exposure apparatus according to claim 4, wherein said optical element is configured to be rotatable with respect to said aperture stop. 7. The projection exposure apparatus according to claim 1, wherein said optical element comprises a plane-parallel plate or an optical wedge. 8. The projection exposure apparatus according to claim 2, wherein said optical element comprises a plane-parallel plate or an optical wedge. 9. The projection exposure apparatus according to claim 3, wherein said optical element comprises a plane parallel plate or an optical wedge. 10. The projection exposure apparatus according to claim 4, wherein said optical element comprises a plane-parallel plate or an optical wedge. 11. A light beam from a light source is guided to an optical integrator comprising a plurality of micro lenses forming a secondary light source, and a light beam from a light exit surface of the optical integrator is condensed by light irradiation means to form a reticle surface. After illuminating the upper pattern, projecting the pattern onto a wafer surface by a projection optical system and exposing the same, when developing the wafer to manufacture a device, the incident angle is set in the vicinity of the light exit surface of the optical integrator. A rotatable optical element having a variable angle with respect to an optical axis coated with a different transmittance is provided, and the illuminance distribution on the object plane is adjusted by rotating the optical element. Manufacturing method of the device. 12. The method according to claim 11, wherein the optical element is configured to be rotatable with respect to the aperture stop. 13. The device manufacturing method according to claim 11, wherein said optical element comprises a plane-parallel plate or an optical wedge. 14. An optical element having a plurality of aperture-integrated optical elements provided with an aperture stop having a predetermined aperture shape, wherein the aperture shapes of the plurality of aperture-integrated optical elements are different from each other; 12. The device manufacturing method according to claim 11, wherein one of the aperture-integrated optical elements is selected and mounted in the optical path so as to be removable. 15. The method according to claim 14, wherein the optical element is configured to be rotatable with respect to the aperture stop. 16. The method for manufacturing a device according to claim 14, wherein said optical element comprises a plane-parallel plate or an optical wedge.