JP3197034B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JP3197034B2 JP3197034B2 JP32029591A JP32029591A JP3197034B2 JP 3197034 B2 JP3197034 B2 JP 3197034B2 JP 32029591 A JP32029591 A JP 32029591A JP 32029591 A JP32029591 A JP 32029591A JP 3197034 B2 JP3197034 B2 JP 3197034B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light
- resin
- light intensity
- resin lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
Landscapes
- Semiconductor Lasers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は、樹脂モールドした半導
体レーザ素子を有する半導体レーザ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device having a resin-molded semiconductor laser element.
【０００２】[0002]
【従来の技術】近年、中央にレーザ光出射用のガラス窓
を持つ金属キャップを半導体レーザ素子に被せるパッケ
ージングを簡略化する目的で、図５に示すようにシリコ
ン系樹脂５２で半導体レーザ素子５１を樹脂モールドし
たパッケージングが、提案されている。図５は、放熱器
５４にダイボンドした半導体レーザ素子５１を備える半
導体レーザ装置の構造図である。2. Description of the Related Art In recent years, for the purpose of simplifying packaging in which a metal cap having a glass window for emitting laser light at the center is covered with a semiconductor laser element, as shown in FIG. Has been proposed. FIG. 5 is a structural diagram of a semiconductor laser device including the semiconductor laser element 51 die-bonded to the radiator 54.
【０００３】上記樹脂モールドによるパッケージング
は、樹脂材料のみでパッケージングでき、上記金属キャ
ップやガラス窓を要するパッケージングに比べてコスト
低減が図れる。また、上記樹脂モールドの際に、半導体
レーザ素子５１を覆う樹脂５２の形状を任意形状に形成
して、半導体レーザ素子５１の出力レーザ光の放射特性
を制御することが可能である。図５に示す半導体レーザ
装置は、従来、ＬＥＤ(発光ダイオード)で用いられてい
る樹脂モールド法で、半導体レーザ素子５１を樹脂モー
ルドしたものであって、半導体レーザ素子５１のレーザ
光の光出射方向に樹脂レンズ５３が形成されている。半
導体レーザ素子５１が放射するレーザ光は樹脂レンズ５
３で屈折して、略平行光あるいは収束光(図示せず)とな
る。The above-described packaging using a resin mold can be packaged using only a resin material, and can reduce costs as compared with the packaging that requires the metal cap and the glass window. Further, at the time of the resin molding, it is possible to form the resin 52 covering the semiconductor laser element 51 into an arbitrary shape to control the emission characteristics of the output laser light of the semiconductor laser element 51. The semiconductor laser device shown in FIG. 5 is a device in which a semiconductor laser element 51 is resin-molded by a resin molding method conventionally used for an LED (light emitting diode), and a light emitting direction of the laser light of the semiconductor laser element 51. Is formed with a resin lens 53. The laser light emitted by the semiconductor laser element 51 is
The light is refracted at 3 and becomes substantially parallel light or convergent light (not shown).
【０００４】ところで、一般に、半導体レーザ素子５１
は、図６(Ａ)の示すように、素子内部のpn接合面と平行
方向にはレーザ光の放射角度が狭い。In general, a semiconductor laser device 51
As shown in FIG. 6A, the emission angle of laser light is narrow in a direction parallel to the pn junction surface inside the device.
【０００５】一方、半導体レーザ素子５１は、図６(Ｂ)
に示すように、素子内部のpn接合面と垂直方向にはレー
ザ光の放射角度が広いレーザ光放射特性を持っている。
この広い放射角のレーザ光は、半導体レーザ素子５１と
樹脂レンズ５３との間の樹脂５２側面で反射してから樹
脂レンズ５３に入射するため、樹脂レンズ５３に直接に
入射するレーザ光に比べて、樹脂レンズ５３への入射角
が大きく、樹脂レンズ５３から径方向外側に向かって出
射する。このように、樹脂５２の側面で反射してからレ
ンズ５３に入射するレーザ光は、図６(Ｂ)に示すよう
に、径方向に分布する幾つかのピークを持つ光強度特性
となり、径方向の光強度分布が非一様で光強度ムラを生
じる上、光束が広がってしまう。この場合、ＬＥＤと異
なり小さなスポットに光を絞り込めるというレーザ光の
利点を損なうという問題がある。このことは、ＬＥＤの
光量よりも大きな光量を必要とし、かつ略平行光あるい
は収束光、なかんずく収束光を必要とする用途において
は、特に不都合なことである。On the other hand, the semiconductor laser element 51 is shown in FIG.
As shown in the figure, the device has a laser light emission characteristic in which a laser light emission angle is wide in a direction perpendicular to the pn junction surface inside the element.
The laser beam having a wide radiation angle is reflected on the side surface of the resin 52 between the semiconductor laser element 51 and the resin lens 53 and then is incident on the resin lens 53. The incident angle on the resin lens 53 is large, and the light exits from the resin lens 53 radially outward. As described above, the laser light that is reflected on the side surface of the resin 52 and then enters the lens 53 has light intensity characteristics having several peaks distributed in the radial direction as shown in FIG. The light intensity distribution is not uniform, causing light intensity unevenness, and the light flux is spread. In this case, unlike the LED, there is a problem in that the advantage of the laser light that the light can be focused on a small spot is impaired. This is particularly inconvenient in applications requiring a light amount larger than the light amount of the LED and requiring substantially parallel light or convergent light, especially convergent light.
【０００６】[0006]
【発明が解決しようとする課題】そこで、本発明の目的
は、出射レーザ光の光強度分布が一様で、光強度ムラが
発生せず、小さなスポットに光を絞り込める半導体レー
ザ装置を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor laser device in which the light intensity distribution of the emitted laser light is uniform, the light intensity unevenness does not occur, and the light can be focused on a small spot. It is in.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明の半導体レーザ装置は、半導体レーザ素子
を、この半導体レーザ素子のレーザ光出射方向に樹脂レ
ンズが形成されるように、樹脂モールドした半導体レー
ザ装置において、上記樹脂レンズの中心軸の延長線が、
上記半導体レーザ素子の接合面の中央を通り、かつ上記
半導体レーザ素子が上記樹脂内で最大光強度のレーザ光
を放射する上記中心軸の方向と、上記半導体レーザ素子
が上記最大光強度の１／(自然対数の底e)2の光強度のレ
ーザ光を放射する方向とがなす角度をωとし、上記樹脂
レンズ後端円と上記中心軸間の距離をrとしたときに、
上記半導体レーザ素子の前面と上記樹脂レンズの後面と
の距離を、０を越え、かつ、r・(tanω)-1以下にしたこ
とを特徴としている。In order to achieve the above object, a semiconductor laser device according to the present invention comprises a semiconductor laser device having a resin mold formed such that a resin lens is formed in a laser beam emitting direction of the semiconductor laser device. In the semiconductor laser device, the extension of the central axis of the resin lens is
The direction of the central axis, which passes through the center of the bonding surface of the semiconductor laser element, and in which the semiconductor laser element emits the laser light having the maximum light intensity in the resin, and the semiconductor laser element is one-half of the maximum light intensity. (Base e of natural logarithm) When an angle between the direction in which the laser light with a light intensity of 2 is emitted is ω, and a distance between the rear end circle of the resin lens and the central axis is r,
The distance between the front surface of the semiconductor laser element and the rear surface of the resin lens is set to be more than 0 and not more than r · (tan ω) −1 .
【０００８】[0008]
【作用】上記構成によれば、図３に示すように、上記中
心軸となす角度が上記角度ω以下のレーザ光の全てが、
上記半導体レーザ素子と樹脂レンズとの間の樹脂側面で
反射することなく、上記樹脂レンズに直接に入射する。
つまり、図４に示すように、一般にガウス分布をなすレ
ーザ光のうち、最大光強度の１／e2(eは自然対数の底)
以上の光強度のレーザ光(いわゆるレーザビーム径内の
レーザ光)の全てが、上記樹脂レンズに直接に入射す
る。したがって、上記半導体レーザ素子から出射するレ
ーザビーム径内の全部のレーザ光が上記樹脂レンズから
略平行に出射する。したがって、上記出射レーザ光の光
強度分布が一様で、光強度ムラが発生しない。また、上
記レーザビーム径内の小さなスポットに、最大光強度の
１／e2以上の光強度の全てのレーザ光を絞り込める。According to the above configuration, as shown in FIG. 3, all the laser beams whose angle with the central axis is equal to or less than the angle ω are
The light directly enters the resin lens without being reflected by the resin side surface between the semiconductor laser element and the resin lens.
That is, as shown in FIG. 4, 1 / e 2 of the maximum light intensity (e is the base of natural logarithm) of the laser light generally having a Gaussian distribution.
All of the laser light having the above light intensity (so-called laser light within the laser beam diameter) is directly incident on the resin lens. Therefore, all the laser beams within the laser beam diameter emitted from the semiconductor laser element are emitted from the resin lens substantially in parallel. Therefore, the light intensity distribution of the emitted laser light is uniform, and light intensity unevenness does not occur. Further, all laser beams having a light intensity of 1 / e 2 or more of the maximum light intensity can be narrowed down to a small spot within the laser beam diameter.
【０００９】[0009]
【実施例】以下、本発明の半導体レーザ装置を図示の実
施例により詳細に説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
【００１０】図１に本発明の実施例の半導体レーザ装置
を示す。図１に示すように、上記実施例は、放熱器４に
ダイボンドした半導体レーザ素子１をシリコン系樹脂２
で樹脂モールドしている。上記半導体レーザ素子１のレ
ーザ光出射方向に、上記樹脂２の一部からなる樹脂レン
ズ３が形成されている。半導体レーザ素子１は、図２
(Ａ)に示すように、素子内部のpn接合面と平行方向には
レーザ光の放射角度が狭い。一方、半導体レーザ素子１
は、図２(Ｂ)に示すように、素子内部のpn接合面と垂直
方向にはレーザ光の放射角度が広いレーザ光放射特性を
持っている。FIG. 1 shows a semiconductor laser device according to an embodiment of the present invention. As shown in FIG. 1, in the above embodiment, the semiconductor laser device 1 die-bonded to the radiator 4 is
With resin molding. A resin lens 3 made of a part of the resin 2 is formed in the laser beam emitting direction of the semiconductor laser element 1. The semiconductor laser device 1 is shown in FIG.
As shown in (A), the emission angle of the laser beam is narrow in a direction parallel to the pn junction surface inside the element. On the other hand, the semiconductor laser device 1
As shown in FIG. 2B, has a laser light emission characteristic in which a laser light emission angle is wide in a direction perpendicular to a pn junction surface inside the element.
【００１１】図３に示すように、上記樹脂レンズ３の表
面は球面の一部からなり、上記樹脂レンズ３は、樹脂レ
ンズ３の中心軸Ｘの延長線が上記半導体レーザ素子１の
発光面である接合面の中央を通るように形成されてい
る。上記樹脂レンズ３の後面と半導体レーザ素子１の前
面との距離はhであり、樹脂レンズ３の後端円３′と中
心軸Ｘ間の距離はrである。また、上記半導体レーザ素
子１の周りを被う樹脂２は、上記樹脂レンズ３の中心軸
Ｘを中心軸とする円柱形をなす。また、図３において、
角度ωは、上記半導体レーザ素子１が上記樹脂２内で最
大光強度のレーザ光を放射する方向である樹脂レンズ３
の中心軸Ｘ方向と、半導体レーザ素子１が上記最大光強
度の１／e2(eは自然対数の底)の光強度のレーザ光を放
射する方向とがなす角度である。上記樹脂レンズ３の後
面と半導体レーザ素子１の前面との距離hを、樹脂レン
ズ３の後端円３′と中心軸Ｘ間の距離rと上記角度ωと
の関係で、次の数１を満たすように、距離hを小さくし
ている。As shown in FIG. 3, the surface of the resin lens 3 is formed of a part of a spherical surface, and the resin lens 3 is such that an extension of the central axis X of the resin lens 3 is a light emitting surface of the semiconductor laser device 1. It is formed so as to pass through the center of a certain joining surface. The distance between the rear surface of the resin lens 3 and the front surface of the semiconductor laser element 1 is h, and the distance between the rear end circle 3 'of the resin lens 3 and the central axis X is r. The resin 2 covering the periphery of the semiconductor laser element 1 has a cylindrical shape with the central axis X of the resin lens 3 as a central axis. Also, in FIG.
The angle ω is a direction in which the semiconductor laser element 1 emits a laser beam having a maximum light intensity in the resin 2.
And the direction in which the semiconductor laser element 1 emits laser light having a light intensity of 1 / e 2 (e is the base of natural logarithm) of the maximum light intensity. The distance h between the rear surface of the resin lens 3 and the front surface of the semiconductor laser element 1 is expressed by the following equation 1 based on the relationship between the distance r between the rear end circle 3 ′ of the resin lens 3 and the central axis X and the angle ω. The distance h is reduced so as to satisfy.
【数１】h＜r・(tanω)-1 [Equation 1] h <r · (tanω) −1
【００１２】したがって、図３に示すように、上記中心
軸Ｘとなす角度が上記角度ω以下のレーザ光の全てが、
上記半導体レーザ素子１と樹脂レンズ３との間の樹脂側
面で反射することなく、上記樹脂レンズ３に直接に入射
する。つまり、図４に示すように、一般にガウス分布を
なすレーザ光のうち、最大光強度の１／e2(eは自然対数
の底)以上の光強度のレーザ光(いわゆるレーザビーム径
内のレーザ光)の全てが、上記樹脂レンズ３に直接に入
射する。したがって、上記半導体レーザ素子１から出射
するレーザビーム径内の全部のレーザ光が上記樹脂レン
ズ３から略平行に出射する。したがって、上記出射レー
ザ光の光強度分布が一様で、光強度ムラが発生しない。
また、上記レーザビーム径内の小さなスポットに、最大
光強度の１／e2以上の光強度の全てのレーザ光を絞り込
める。なお、図２(c)のように、樹脂レンズ３で収束光
とする場合も全く同様である。Therefore, as shown in FIG. 3, all of the laser beams whose angle with the central axis X is equal to or smaller than the angle ω are
The light directly enters the resin lens 3 without being reflected on the resin side surface between the semiconductor laser element 1 and the resin lens 3. That is, as shown in FIG. 4, a laser beam having a light intensity equal to or more than 1 / e 2 (e is the base of natural logarithm) of the maximum light intensity of the laser light generally having a Gaussian distribution. Light) directly enter the resin lens 3. Therefore, all the laser beams within the laser beam diameter emitted from the semiconductor laser element 1 are emitted from the resin lens 3 substantially in parallel. Therefore, the light intensity distribution of the emitted laser light is uniform, and light intensity unevenness does not occur.
Further, all laser beams having a light intensity of 1 / e 2 or more of the maximum light intensity can be narrowed down to a small spot within the laser beam diameter. Note that, as shown in FIG. 2C, the same applies to the case where the light is converged by the resin lens 3.
【００１３】なお、図４に示すように、上記中心軸Ｘと
なす角度が上記角度ωよりも大きなレーザ光の光強度
は、上記中心軸付近のレーザ光の光強度に比べて非常に
小さいので、上記中心軸となす角度が上記角度ωよりも
大きなレーザ光が、樹脂レンズ３と半導体レーザ素子１
との間の樹脂２の側面で反射伝搬して樹脂レンズ３に入
射し、樹脂レンズ３の外径の外側へ放射しても、実使用
上問題となる程の光束拡散と光強度ムラは起こらなかっ
た。As shown in FIG. 4, since the light intensity of the laser light whose angle with the central axis X is larger than the angle ω is much smaller than the light intensity of the laser light near the central axis, The laser beam whose angle with the central axis is larger than the angle ω is applied to the resin lens 3 and the semiconductor laser element 1.
Even if the light is reflected and propagated on the side surface of the resin 2 and enters the resin lens 3 and radiates to the outside of the outer diameter of the resin lens 3, light flux diffusion and light intensity unevenness that cause problems in practical use occur. Did not.
【００１４】[0014]
【発明の効果】以上より明らかなように、本発明の半導
体レーザ装置は、樹脂レンズの中心軸の延長線が、半導
体レーザ素子の接合面の中央を通り、かつ上記半導体レ
ーザ素子が上記樹脂内で最大光強度のレーザ光を放射す
る上記中心軸の方向と、上記半導体レーザ素子が上記最
大光強度の１／(自然対数の底e)2の光強度のレーザ光を
放射する方向とがなす角度をωとし、上記樹脂レンズの
後端円と上記中心軸間の距離をrとしたときに、上記半
導体レーザ素子の前面と上記樹脂レンズの後面との距離
をr・(tanω)-1以下にしたので、図３に示すように、上
記中心軸となす角度が上記角度ω以下のレーザ光の全て
が、上記半導体レーザ素子と樹脂レンズとの間の樹脂側
面で反射することなく、上記樹脂レンズに直接に入射す
る。つまり、図４に示すように、一般にガウス分布をな
すレーザ光のうち、最大光強度の１／e2(eは自然対数の
底)以上の光強度のレーザ光(いわゆるレーザビーム径内
のレーザ光)の全てが、上記樹脂レンズに直接に入射す
る。したがって、上記半導体レーザ素子から出射するレ
ーザビーム径内の全部のレーザ光が上記樹脂レンズから
略平行あるいは収束して出射する。したがって、上記出
射レーザ光の光強度分布が一様で、光強度ムラが発生し
ない。また、上記レーザビーム径内の小さなスポット
に、最大光強度の１／e2以上の光強度の全てのレーザ光
を絞り込むことができる。As is apparent from the above description, in the semiconductor laser device of the present invention, the extension of the central axis of the resin lens passes through the center of the bonding surface of the semiconductor laser element, and the semiconductor laser element is formed in the resin. The direction of the central axis, which emits the laser light of the maximum light intensity, and the direction in which the semiconductor laser device emits the laser light of the light intensity of 1 / (natural logarithmic base e) 2 of the maximum light intensity is formed. When the angle is ω, and the distance between the rear end circle of the resin lens and the central axis is r, the distance between the front surface of the semiconductor laser element and the rear surface of the resin lens is r · (tan ω) −1 or less. As shown in FIG. 3, all of the laser light whose angle with the central axis is equal to or less than the angle ω is not reflected by the resin side surface between the semiconductor laser element and the resin lens, and Directly incident on the lens. That is, as shown in FIG. 4, a laser beam having a light intensity equal to or more than 1 / e 2 (e is the base of natural logarithm) of the maximum light intensity of the laser light generally having a Gaussian distribution. Light) is directly incident on the resin lens. Therefore, all the laser beams within the laser beam diameter emitted from the semiconductor laser element are emitted from the resin lens in a substantially parallel or convergent manner. Therefore, the light intensity distribution of the emitted laser light is uniform, and light intensity unevenness does not occur. Further, all laser beams having a light intensity of 1 / e 2 or more of the maximum light intensity can be narrowed down to a small spot within the laser beam diameter.
【図１】 本発明の半導体レーザ装置の構造図である。FIG. 1 is a structural diagram of a semiconductor laser device of the present invention.
【図２】 上記実施例のレーザ光の光路概略図である。FIG. 2 is a schematic view of an optical path of laser light according to the embodiment.
【図３】 上記実施例の要部寸法を示す図である。FIG. 3 is a diagram showing main part dimensions of the embodiment.
【図４】 半導体レーザ素子のレーザ光放射特性図であ
る。FIG. 4 is a laser light emission characteristic diagram of a semiconductor laser device.
【図５】 従来の半導体レーザ装置の構造図である。FIG. 5 is a structural view of a conventional semiconductor laser device.
【図６】 従来の半導体レーザ装置のレーザ光の光路概
略図である。FIG. 6 is a schematic view of an optical path of laser light of a conventional semiconductor laser device.
１ 半導体レーザ素子 ２ 樹脂 ３ 樹脂レンズ ４ 放熱器 ３′ 後端円 DESCRIPTION OF SYMBOLS 1 Semiconductor laser element 2 Resin 3 Resin lens 4 Heat sink 3 'Back end circle
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01S 5/00 - 5/50 H01L 23/28 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01S 5/00-5/50 H01L 23/28
Claims (1)
素子のレーザ光出射方向に樹脂レンズが形成されるよう
に、樹脂モールドした半導体レーザ装置において、 上記樹脂レンズの中心軸の延長線が、上記半導体レーザ
素子の接合面の中央を通り、かつ上記半導体レーザ素子
が上記樹脂内で最大光強度のレーザ光を放射する上記中
心軸の方向と、上記半導体レーザ素子が上記最大光強度
の１／(自然対数の底e)2の光強度のレーザ光を放射する
方向とがなす角度をωとし、上記樹脂レンズ後端円と上
記中心軸間の距離をrとしたときに、上記半導体レーザ
素子の前面と上記樹脂レンズの後面との距離を、０を越
え、かつ、r・(tanω)-1以下にしたことを特徴とする半
導体レーザ装置。1. A semiconductor laser device in which a semiconductor laser element is resin-molded so that a resin lens is formed in a laser beam emitting direction of the semiconductor laser element. The direction of the central axis, which passes through the center of the bonding surface of the laser element and in which the semiconductor laser element emits laser light of the maximum light intensity in the resin, and the semiconductor laser element is 1 / (natural) of the maximum light intensity E) the angle between the direction of emission of the laser light having a light intensity of 2 and the direction of the laser light is ω, and the distance between the rear end circle of the resin lens and the central axis is r, the front surface of the semiconductor laser element A distance between the first lens and the rear surface of the resin lens is greater than 0 and equal to or less than r · (tanω) −1 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32029591A JP3197034B2 (en) | 1991-12-04 | 1991-12-04 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32029591A JP3197034B2 (en) | 1991-12-04 | 1991-12-04 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05160518A JPH05160518A (en) | 1993-06-25 |
| JP3197034B2 true JP3197034B2 (en) | 2001-08-13 |
Family
ID=18119912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32029591A Expired - Fee Related JP3197034B2 (en) | 1991-12-04 | 1991-12-04 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3197034B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017123798B4 (en) | 2017-10-12 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Semiconductor lasers and manufacturing processes for optoelectronic semiconductor components |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51136293A (en) * | 1975-05-21 | 1976-11-25 | Oki Electric Ind Co Ltd | Wave length converter |
| JPS62122368U (en) * | 1986-01-27 | 1987-08-03 |
-
1991
- 1991-12-04 JP JP32029591A patent/JP3197034B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05160518A (en) | 1993-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10465873B2 (en) | Light emitting device, vehicle headlamp, illumination device, and laser element | |
| US5353294A (en) | Semiconductor laser device and semiconductor laser module | |
| US10749311B2 (en) | Light source device and projection device | |
| JP2542777B2 (en) | External cavity diode laser | |
| JPH09222540A (en) | Short optical subassembly | |
| US6975792B1 (en) | Method and apparatus for coupling light into a waveguide using a slit | |
| US4001704A (en) | Laser solar cell apparatus | |
| JP3197034B2 (en) | Semiconductor laser device | |
| JP2664392B2 (en) | Laser device | |
| JPH09113768A (en) | Optical coupling structure of optical receiver | |
| US6520670B2 (en) | Light radiating device with large beam spot size and spatial optical communication device | |
| JPH0639464Y2 (en) | Light emitting diode | |
| US3518418A (en) | Electro-luminescent diode and radiation projector | |
| JPH05273492A (en) | Semiconductor laser beam source | |
| JPS60182781A (en) | Semiconductor device | |
| JPH08304672A (en) | Optoelectronic device | |
| JPH05243618A (en) | Light-emitting device | |
| CN112688163B (en) | Irregular reflector structure of distributed feedback laser | |
| JP3124100B2 (en) | Package type semiconductor laser device | |
| JPH0918087A (en) | Multi-beam semiconductor laser device | |
| JPH0677599A (en) | Semiconductor laser module with small reflected return light from lens | |
| JPH01253983A (en) | Semiconductor laser device | |
| CN115275765A (en) | SLD light emission structure | |
| JPH0499082A (en) | Stem for semiconductor laser | |
| JPH10303513A (en) | Semiconductor laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090608 Year of fee payment: 8 |
|
| LAPS | Cancellation because of no payment of annual fees |