JP3053105B2 - Plasma CVD apparatus and method - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature plasma apparatus for manufacturing a semiconductor device, and more particularly, to a plasma CVD apparatus suitable for forming a uniform insulating film on a substrate surface and a method therefor. .

[Conventional technology]

Broadly categorizing conventional CVD equipment using low-temperature plasma,
Using a technology that generates a plasma by applying a high-frequency voltage of 10 KHz to 30 MHz to one of the parallel plate electrodes in a vacuum (Semiconductor Research 18; p121-170, Semiconductor Research 19; p225-26
7) and a technique using a technique of generating a plasma by introducing a microwave of 2.45 GHz into a vacuum chamber. Of these techniques, a technique using a parallel plate electrode has been mainly used.
On the other hand, with the miniaturization of semiconductor elements, there has been a problem that element characteristics are affected by ion bombardment in plasma during thin film formation.

Further, in order to improve the processing ability, it is required to increase the film forming speed.

In order to increase the film formation rate, it is necessary to increase the plasma density and the concentration of radicals (active particles immediately before ionization). To this end, means for increasing the input energy and means for increasing the flow rate of the reaction gas are required. Need to be implemented.

The reason is that, when the flow rate of the reaction gas is increased in a state where the energy is insufficient, the amount of gas decomposed is limited, so that the film forming rate tends to be saturated,
For that purpose, it is necessary to supply sufficient energy for decomposing the reaction gas.

However, in the case of a parallel-plate type electrode, when the input energy, that is, the high-frequency power is increased, the deposition rate is increased, but the energy of ions colliding with the half-surface substrate is increased, and the electrical characteristics of the semiconductor element are deteriorated. was there.

Further, the generation of the abnormal discharge causes a problem that the decomposition efficiency of the gas is reduced and the deposits on the reaction chamber wall are taken into the substrate surface as impurities.

On the other hand, when plasma is generated by microwaves, even if the microwaves generated by the magnetron are directly radiated to the low-pressure plasma generation chamber, energy is supplied to the electrons to the ionization energy level because the electric field strength of the microwaves is insufficient. This makes it difficult to generate plasma.

Therefore, conventionally, the frequency of the cyclotron and the frequency of the microwave, where electrons rotate on a plane perpendicular to the magnetic field, are matched,
A method of supplying energy to electrons in a resonance state or a method of radiating microwaves to a cavity resonator to increase the amplitude of the microwaves and increasing the electric field strength to supply energy to the electrons has been implemented.

The former is called a microwave with a magnetic field or an electron cyclotron resonance (ECR) (Electron Cyclotron Resonance) method, and is proposed in, for example, Japanese Patent Application Laid-Open No. 56-13480.

The latter is described in, for example, JP-A-56-96841 and JP-A-63-103088 proposed by the present inventors.

In the former microwave plasma, since energy is directly supplied from the microwave to the electrons, the voltage between the sheaths formed between the plasma and the substrate hardly changes. Therefore, by applying a high-frequency voltage to the electrode on which the substrate is mounted and arbitrarily controlling the inter-sheath voltage, it is possible to control the plasma density and the appropriate ion energy required for high-speed operation.

However, in the ECR method, as described in JP-A-56-13480, when a high-frequency voltage is applied to an electrode on which a substrate is mounted, there is no ground electrode on the side opposite to this electrode. The problem is that high-frequency current flows between the processing chamber around the substrate and the ion energy effect on the substrate is strong around the substrate and weak at the center, so that the entire substrate cannot be processed under uniform conditions. In addition, there is a problem that a coil for generating an ECR magnetic field is required and the entire apparatus becomes large.

In order to solve such a problem and form a film at a high speed with an appropriate ion energy, a method of radiating microwaves in a cavity from a slit in a cavity resonator described in JP-A-63-103088 is used. It was proposed to the processing device.

Next, an outline of the plasma processing apparatus will be described.

Generally, when a microwave travels in a waveguide or a cavity resonator considered to be a kind of a waveguide, a current corresponding to an electric field and a magnetic field flows on the surface of the waveguide. When a slit is provided in a part of the waveguide so as to cross this current, electric charges accumulate at both ends of the slit, and this changes with the progress of the microwave. Microwaves are radiated outside.

This plasma processing apparatus is based on the above principle. For example, as shown in FIG. 12, a microwave generated by a magnetron 3 passes through a waveguide 2 and a cavity resonator 1.
The microwave is radiated from the slit 4c provided on the lower surface of the cavity resonator 1 to the plasma generation chamber 6, and gas is supplied from the gas supply pipe 10 to generate plasma.
A high frequency voltage is applied to the electrode 7 on which the substrate 8 is mounted,
By connecting the opposing slit plate 4 to the ground potential, the opposing electrode can be made parallel to the electrode 7, and the effect of ions can be uniformly generated on the entire substrate 8.

[Problems to be solved by the invention]

The prior art described above has a problem that it is not possible to form a thin film uniformly, because sufficient consideration is not given to the flow of gas which affects the uniformity of film formation.

That is, in plasma CVD, a thin film is formed by a chemical reaction on the substrate surface. Therefore, the gas flow flowing on the substrate surface has a large effect on the thin film formation reaction, and a thick film is formed in a portion where a large amount of gas flows, and a thin film is formed with a small amount to form a film having a distribution on the substrate. . Flow varies with pressure and gas flow. For example, under the conditions of a pressure of 10 mTorr or less and a gas flow rate of 100 scm ³ / sec or less, the influence of diffusion is dominant, the gas molecule concentration on the substrate surface becomes uniform, and a uniform thin film is formed.

However, under these conditions, there was a problem that the film formation rate was slow because the gas flow rate was small.

In addition, most plasma CVD systems use a built-in heater in the substrate mounting table to heat the substrate.However, since the number of gas molecules existing between the mounting table and the substrate is small, heat can pass through the substrate at low pressure. However, there is a problem that the rate decreases and it takes time to heat the substrate. Therefore, it is desired to form a film at a relatively high pressure.

However, as described above, when a film is formed in a high pressure range, the influence of the viscosity of the gas flow appears. Therefore, there is a problem that a thin film cannot be uniformly formed on a substrate by the conventional gas supply method.

An object of the present invention is to provide a plasma CVD apparatus and a method capable of forming a thin film at high speed and uniformity.

[Means for solving the problem]

In order to achieve the above object, in the plasma CVD apparatus of the present invention, the cavity resonator is made coaxial, and a CVD gas outlet is provided inside the shaft and inside the peripheral wall of the cavity resonator. A CVD gas is supplied toward the substrate to generate uniform plasma and form a uniform thin film on the surface of the substrate.

In addition, in order to generate an axially symmetric uniform plasma and form a uniform thin film, the resonance mode of the cavity resonator is set to the H mode, and a slot for radiating microwaves to the plasma generation chamber is provided on the opposite surface of the substrate. It is configured to be axially symmetrical in an arc shape.

In order to uniformly form a thin film on a large-area substrate, a plurality of cavity resonators having different sizes are configured to be axially symmetric.

Further, in order to achieve the above object, a variable flow valve for controlling a gas flow supplied to the plasma generation chamber through the inside of the shaft and a gas flow supplied to the inside of the peripheral wall is provided.

Further, in order to promote the decomposition of gas and to make the concentration of radical molecules uniform on the substrate, the gas introduction port into the plasma generation chamber is provided facing the high-density plasma generation space.

Further, in order to supply gas to the high-density plasma generation space in the plasma CVD apparatus of the present invention, a gas inlet into the plasma generation chamber is provided so as to blow out at an angle of 15 ° or less with respect to the substrate.

[Action]

According to the present invention, the gas flows from the gas blowout holes formed in the coaxial and peripheral walls of the coaxial cavity resonator toward the central portion and the peripheral portion of the board, respectively, so that the gas flows uniformly on the substrate surface. Thus, a uniform thin film can be formed on the substrate.

In addition, since the resonance mode of the cavity resonator is set to the H mode, and the mode provided on the substrate facing surface of the cavity resonator is configured to be axially symmetrical and arcuate, microwaves can be radiated uniformly and axially symmetrically. This makes it possible to generate plasma uniformly and axially symmetrically, thereby forming a uniform thin film on the substrate.

Further, since a plurality of cavity resonators having different sizes are configured to be axially symmetric, a uniform thin film can be formed on a large-area substrate.

Also equipped with a variable flow valve that controls the gas flow supplied from inside the coaxial and the gas flow supplied from inside the peripheral wall. And a uniform thin film can be formed on the substrate.

That is, in the present invention, the density of the plasma in the plasma generation chamber is higher as the position is closer to the microwave inlet, that is, closer to the slot, and the plasma density decreases as the distance from the slot increases. On the other hand, the gas introduced into the plasma generation chamber passes through the plasma, reaches the surface of the substrate, and adheres thereto.
In plasma, gas dissociation or ionization reaction proceeds, but plasma CVD reaction depends on radical species generated in the dissociation reaction. When a large amount of radical species reaches the substrate, the thickness of the formed film increases, and when the number of radical species decreases, the thickness decreases.

For example, when a gas is introduced as a gas introduction method in which gas passes through low-density plasma and reaches a substrate, a dissociation reaction does not proceed, so that a film formation rate is reduced. In addition, when the high-density region is allowed to pass through, the dissociation is promoted and the number of radical species is increased, thereby enabling high-speed film formation. Therefore, if the gas that reaches the substrate surface passes through the high-density plasma and the gas that passes through the low-density plasma is mixed, the film thickness distribution becomes non-uniform. .

In the present invention, since the gas introduction port to the plasma generation chamber is provided facing the high-density plasma generation space, the introduced gas is accelerated to dissociate and reaches the substrate, so that the gas is rapidly and uniformly dispersed. Film formation is performed.

Furthermore, in the plasma CVD apparatus of the present invention, since high-density plasma is formed near the slot, the gas introduction port into the plasma generation chamber is blown at an angle of 15 ° or less with the substrate to promote dissociation. It was done.

〔Example〕

Hereinafter, FIGS. 1A and 1B showing a plasma CVD apparatus according to an embodiment of the present invention will be described.

As shown in FIG. 1 (a), the cavity resonator 1 is a so-called coaxial circular resonator having an integral shaft portion 1a at the center of a circular shape, and is eccentric on the upper surface to improve coupling. A magnetron 3 is provided via the attached waveguide 2. The waveguide 2 may be provided with a microwave power monitor, a matching device, an isolator, and the like.

A slot plate 4 is provided on the lower surface of the cavity resonator 1, and a plurality of (four in the figure) circumferentially elongated slots 4a are formed in the circumferential direction as shown in FIG. 1 (b). I have. The shape of the slot 4 is a shape corresponding to the resonance mode from the principle of the slot antenna, that is, in this embodiment,
Since the mode of the coaxial resonator 1 is formed the dimensions of the coaxial resonator 1 so that H ₁₀ mode, the slot 4 is formed into an elongated arc shape in the circumferential direction. A quartz plate 5 for vacuum sealing is fixed below the slot 4, and microwaves from the cavity resonator 1 are radiated from the slot 4 through the quartz plate 5 to the plasma generation chamber 6 below.
A substrate mounting table 7 on which a substrate 8 is mounted is installed at the bottom of the plasma generation chamber 6, and a substrate heating heater (not shown) is installed in the substrate mounting table 7. Further, a gas exhaust pipe 9 connected to a vacuum pump (not shown) for controlling the inside of the plasma generation chamber 6 to a pressure of 1 to 10 ^-3 Torr is installed in the plasma generation chamber 6.

In the shaft portion 1a, a gas supply pipe 1 is connected to a gas source (not shown).
A gas flow passage 13 'connected at 0' and a gas flow passage 13 '
And a gas outlet 12 'connected to the buffer 11' and opening toward the center of the plasma generating chamber 6 on the substrate 8.

A ring-shaped buffer 11 'is provided on the peripheral wall of the cavity resonator 1. The buffer 11 ′ is connected to a gas source via a gas flow passage 13 ′ and a gas supply pipe 10 ′, and has a gas outlet 12 ′ opening toward the peripheral portion of the substrate 8 in the plasma generation chamber 6. Connected. Since the shaft portion 1a is formed of, for example, aluminum, it prevents the microwave in the cavity resonator 1 from entering the gas flow passage 13.

 Next, the operation will be described.

When the magnetron is driven and the microwave oscillates, the microwave is supplied through the waveguide 2 into the cavity resonator 1. The energy of the microwave whose amplitude is increased in the cavity resonator 1 is radiated from the plurality of slots 4 through the quartz plate 5 to the lower plasma generation chamber 6.

On the other hand, gas is supplied from the gas outlet 12 ′ provided in the shaft portion 1 a toward the central portion on the substrate 8, and at the same time, the gas is supplied from the gas outlet 12 ′ provided in the peripheral wall of the cavity resonator 1 to the center on the substrate 8. The gas is supplied toward the peripheral portion and the peripheral portion, and a preset gas flow rate is supplied from both gas outlets 12 ', 12', so that the gas flow on the substrate 8 can be made uniform.

Next, the simulation results of the gas flow are shown in FIGS. 2 and 3 show streamlines by simultaneously solving the Navier-Stokes' equation and the continuity equation. FIG. 2 shows an example in which gas is blown out only from the gas outlet 12 'on the peripheral wall of the cavity resonator 1. The distance between the quartz plate 5 and the substrate 8 is 50 mm, and the diameter of the gas outlet 12' is It is formed to 136mm. FIG. 3 shows streamlines of the coaxial resonator of the embodiment shown in FIG.
The calculation is performed with the central gas outlet 12 'having a diameter of 20 mm and the peripheral gas outlet 12' having a diameter of 192 mm. FIG. 2 shows that most of the gas flows around the substrate 8, while FIG. 3 shows that the gas flow is uniform. It is clear that a uniform thin film can be formed on the substrate 8 by this. Note that the simulation results of the gas flow are the same in the case of the embodiment shown in FIG.

Next, FIG. 4 showing a plasma CVD apparatus according to another embodiment of the present invention will be described.

FIG. 4 shows a case where three coaxial resonators 1 ', 1', 1 'having different sizes (diameters) are integrally formed, and each coaxial resonator 1', 1 ', 1' Boundary conductors 1a ', 1a', 1a '
The gas flow passages 13 ″, 13 ″, 13 ″ and the buffer 1
1 ", 11", 11 "and gas outlets 12", 12 ", 12" are provided.

Further, a gas flow passage 13 ", a buffer 11", and a gas outlet 12 "are provided in the peripheral portion.

Therefore, a uniform thin film can be formed on the substrate 8 by blowing out the gas from the gas outlets 12 ", 12", 12 "provided at the central portion and a plurality of pitch circles around the central portion. Next, a plasma CV according to still another embodiment of the present invention
FIG. 5 showing the D apparatus will be described.

FIG. 5 shows a case where a magnetic field generating coil 15 is installed in the plasma CVD apparatus shown in FIG.

In the case of the embodiment shown in FIG.
When the internal pressure is high, the mean free path of the gas molecules is short and the collision is frequent, so that the plasma density can be increased.

However, when the pressure in the plasma generation chamber 6 is low,
If the microwave is simply radiated to the plasma generation chamber 6 as in the embodiment shown in FIG. 1, the mean free path of the gas molecules is long. To increase. As a result, the frequency of collision with gas molecules is reduced and plasma is hardly generated.

Therefore, when a magnetic field generating coil 15 is provided around the cavity resonator 1 as in this embodiment, a magnetic field parallel to the microwave radiation direction is generated by the magnetic field generating coil 15 so that the electrons are wound around the lines of magnetic force. Exercise can reduce annihilation on the wall.

Therefore, there is an effect that the probability of collision with gas molecules increases, and the plasma is easily ignited.

Next, a plasma CV according to still another embodiment of the present invention
6 (a) and 6 (b) showing the D apparatus will be described.

As shown in FIG. 6 (a), the central coaxial resonator 1 ″
We have established resonator 1 which matches the vibration mode of the waveguide within 2 H ₀₁ mode around. A gas supply pipe (not shown) is connected to a gas source (not shown) so as to be located on the central axis portion 1a "of the central coaxial resonator 1" and a plurality of pitch circles around the central axis portion 1a ".
A gas flow path 13 connected at 10 and a gas outlet 12 connected to the buffer 11 of the buffer 11 connected to the gas flow path 13 and opening into the plasma generation chamber 6 ″ are provided.

Therefore, also in this embodiment, a uniform thin film can be formed on the substrate 8.

 Next, another embodiment according to the present invention is shown in FIG.

The cavity resonator 1 is a so-called coaxial circular resonator having an integral shaft portion 1a at the center of the circular shape. The upper surface of the cavity resonator 1 is well connected to the microwave supply between the waveguide 2 and the cavity resonator 1. For this purpose, the waveguide 2 is mounted eccentrically.
Further, a slot plate 4 'having a slot 4a' is provided in the middle of the cavity resonator 1. Thereby, both slot plates 4, 4 'are made parallel. The length t of the cavity 1 divided by the intermediate slot plate 4 'is set to an integral multiple of 1/2 of the guide wavelength or a value close thereto.

By the way, since the energy of the microwave radiated from the plurality of slots 4a 'varies depending on the intensity distribution of the electric field formed by the standing wave in the cavity, the standing wave is uniform in the cavity. It must be. However, since the standing wave formed in the upper cavity resonance chamber 1 has a coupling port with the waveguide 2, it is difficult to obtain a uniform distribution. Therefore, by further providing the cavity resonance chamber 1 and the slot plate 4 on the lower side, the distribution of the standing wave in the cavity resonance chamber 1 is made much more uniform than that in the upper cavity resonance chamber 1. . As a result, the uniformity of the energy distribution of the microwave radiated from the slot 4a to the plasma generation chamber is improved.

The amplitude of the microwave generated by the magnetron 3 is 2
Since the power is increased through the cavity resonator 1 formed by the two cavity resonance chambers, even if the plasma chamber 6 does not have a cavity resonator structure, the gas in the plasma chamber 6 is excited by the supply of microwaves to generate ions and ions. The plasma is turned on and maintained as radicals.

Next, another embodiment according to the present invention is shown in FIG. FIG. 8 shows the embodiment of FIG. 7 (substantially the same as FIG. 1) with the addition of variable flow valves 15, 15 '. A variable flow valve 15 is provided in a gas supply system that passes through the axis of the coaxial resonator 1, and a variable flow valve 15 ′ is provided in a gas supply system that is introduced into the plasma generation chamber 6 from a gas outlet 12 ″ on the peripheral wall. A mass flow controller is used as the variable flow rate valves 15 and 15 ', and the gas flow rate can be controlled. An example of controlling the gas flow rate and forming a plasma silicon oxide film with this configuration is shown below. Fig. 9 shows the distribution of the film forming speed in the wafer, using the ratio of the gas flow rate passing through the shaft (the gas flow rate at the center) to the gas flow rate supplied from the peripheral wall (the surrounding gas flow rate) as a parameter. The flow ratio is
1: 3.5 has a convex distribution, and 1: 5 has a concave distribution. When the flow rate ratio is set to 1: 4, uniformity of ± 3% can be obtained. As described above, by controlling the gas flow rate, the film thickness distribution can be controlled from the concave shape to the convex shape, and there is an effect that the film can be formed into a uniform film thickness.

FIG. 10 is an enlarged view of a gas introduction portion from the periphery of the present embodiment. The gas introduction holes 12a are provided so as to blow out at an angle of 15 ° with the horizontal. Further, the gas introduction hole 12b is provided horizontally. From the gas introduction hole 12a, a film forming gas such as S
gas containing iH ₄ and TEOS is introduced. An inert gas or a gas of N ₂ or N ₂ O is introduced from the gas introduction hole 12b. As a result, the concentration of the film forming gas near the surface of the quartz window 5 is reduced, and the amount of the deposition gas adhering to the quartz window 5 is reduced. On the other hand, the plasma generated in the plasma generation chamber 6 has a higher plasma density as it is closer to the microwave introduction port, that is, closer to the slot plate 4. FIG. 11 shows the measurement results of the plasma density distribution. It can be seen that the closer to the quartz window, the higher the plasma density. In the present embodiment, the angle of the gas introduction hole 12a is set to 15 °, and the film forming gas is blown toward the high density plasma generation space. Therefore, the number of radical species generated in the plasma is increased, and the film formation rate is increased.In addition, the gas that reaches the substrate through the low-density plasma region is not mixed with the gas. Has an effect that the film is uniformly formed.

[Effects of the Invention] As described above, according to the present invention, the cavity resonator is made coaxial, and the CVD gas is introduced substantially into the center portion and the peripheral portion of the substrate inside the shaft and inside the peripheral wall of the cavity resonator. Since the port is provided, the gas flow flowing on the substrate surface can be made uniform, and thus a uniform thin film can be formed.

The cavity has a slot on its surface facing the substrate for radiating microwaves to the plasma generation chamber. The cavity has a resonance mode of H mode, and the slot is formed in an axially symmetric arc shape. Therefore, a uniform thin film can be formed by generating an axially symmetric and uniform plasma.

Further, since a plurality of cavity resonators having different sizes are arranged axially symmetrically, a thin film can be uniformly formed on a substrate having a large area.

In addition, a variable flow valve for controlling the gas flow supplied to the plasma generation chamber from the gas flow passage formed inside the axis of the coaxial resonator and the gas flow supplied from the inside of the peripheral wall of the resonator is provided. The film thickness distribution can be controlled from a concave shape to a convex shape, and a film can be formed with a uniform film thickness.

In addition, since the gas inlet to the plasma generation chamber is installed facing the space where high-density plasma is generated, the number of radical species generated in the plasma increases, and the film formation speed increases, Since the number of radical species on the wafer can be made uniform, a uniform thin film can be formed.

[Brief description of the drawings]

FIG. 1 shows a plasma CVD apparatus according to an embodiment of the present invention, in which (a) is a sectional front view and (b) is (a).
FIG. 2 is a simulation view of the gas flow blown out only from the gas outlets around the cavity shown in FIG. 1 and FIG. 7, and FIG. 3 is a plan view of FIG. 1 and FIG. FIG. 7 is a simulation diagram of a gas flow blown out from gas outlets at the center and peripheral portions of the cavity shown in FIG. 7, FIG. 4 is a cross-sectional view showing a plasma CVD apparatus according to another embodiment of the present invention, and FIG. Is a plasma CVD according to still another embodiment of the present invention.
FIG. 6 is a sectional view showing the apparatus, FIG. 6 shows a plasma CVD apparatus according to still another embodiment of the present invention, (a) is a sectional front view, and (b) is a II-II section of (a). FIG. 7 is a cross-sectional perspective view of a plasma CVD apparatus showing another embodiment of the present invention, FIG. 8 is a cross-sectional perspective view showing still another embodiment of the present invention, and FIG. FIG. 10 is a diagram showing the relationship between the distance from the center of the wafer and the deposition rate in the embodiment shown in FIG.
FIG. 11 is an enlarged view of an air outlet provided on the peripheral wall portion in FIG. 7, FIG. 11 is a diagram showing a relationship between a distance from a quartz plate and a plasma density, and FIG. It is a sectional perspective view showing a CVD device. DESCRIPTION OF SYMBOLS 1 ... Cavity resonator, 2 ... Waveguide, 3 ... Magnetron, 4
... Slot, 5 ... Quartz plate, 6 ... Plasma generating chamber, 7 ... Substrate mounting table, 8 ... Substrate, 9 ... Gas exhaust pipe, 10 ... Fluid supply pipe, 11 '... Buffer, 12' ... Gas outlet, 13 ' ... gas flow passage.

──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-63-293824 (JP, A) JP-A-64-23537 (JP, A) JP-A-63-316427 (JP, A) JP-A-1- 258400 (JP, A) JP-A-1-309974 (JP, A) JP-A-3-24269 (JP, A) JP-A-62-197848 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 C23C 16/50 H01L 21/31

Claims (20)

(57) [Claims] 1. A microwave generator, a coaxial cavity resonator for resonating a microwave supplied from the microwave generator, and a coaxial cavity resonator provided at a lower portion and a peripheral wall portion of an axis of the cavity resonator to be supplied. A plurality of gas inlets for introducing the CVD gas, and a coupling plate which is resonated and strengthened by the cavity resonator with respect to the CVD gas introduced by uniformizing a gas flow flowing from each gas inlet to the substrate surface. A plasma generation chamber for generating uniform plasma by microwaves radiated through the substrate and forming a uniform thin film on the surface of the substrate. 2. The plasma CVD apparatus according to claim 1, wherein a slot for radiating the resonated microwave to the plasma generation chamber is provided on a surface of the cavity resonator facing the substrate. 3. The plasma CVD apparatus according to claim 2, wherein said slots are formed in an arc shape symmetrically with respect to an axis. 4. The plasma CVD apparatus according to claim 2, wherein the resonance mode of the cavity resonator is an H mode. 5. The plasma CVD apparatus according to claim 1, wherein a plurality of said cavity resonators are formed axially symmetrically. 6. A flow rate of a gas introduced into a plasma generation chamber from a gas inlet formed in a shaft portion of the cavity resonator, and a gas outlet formed in a peripheral wall portion of the cavity resonator into a plasma generation chamber. 2. The plasma CVD apparatus according to claim 1, further comprising control means for relatively controlling the flow rate of the introduced gas. 7. A flow rate of a gas introduced into a plasma generation chamber from a gas inlet formed in a shaft portion of the cavity resonator, and a flow rate of a gas introduced from a gas inlet formed in a peripheral wall portion of the cavity resonator into the plasma generation chamber. 2. The plasma according to claim 1, further comprising control means for individually controlling the flow rate of the introduced gas.
CVD equipment. 8. The plasma CVD apparatus according to claim 1, wherein each of the gas introduction ports is set to face a plasma generation space on the substrate. 9. A microwave generator, a coaxial cavity resonator for resonating the microwave supplied from the microwave generator, and a CVD device formed inside the axis and inside the peripheral wall of the cavity resonator. A plurality of gas flow paths for flowing gas, a plurality of gas inlets for introducing the CVD gas supplied from each of the gas flow paths, and a uniform gas flow flowing from each of the gas inlets to the substrate surface is introduced. A plasma generation chamber for generating uniform plasma by the microwave radiated through the coupling plate by being resonated and strengthened by the cavity resonator with respect to the CVD gas to form a uniform thin film on the surface of the substrate. A plasma CVD apparatus comprising: 10. A surface of the cavity resonator facing the substrate,
The plasma CVD apparatus according to claim 9, further comprising a slot for radiating the resonated microwave to the plasma generation chamber. 11. The plasma CVD apparatus according to claim 10, wherein said slots are formed in an arc shape symmetrically about an axis. 12. The plasma CVD apparatus according to claim 10, wherein the resonance mode of the cavity resonator is an H mode. 13. The plasma CVD apparatus according to claim 9, wherein a plurality of said cavity resonators are formed axially symmetrically. 14. A flow rate of a gas introduced into a plasma generation chamber from a gas inlet formed in a shaft portion of the cavity resonator, and a gas outlet formed in a peripheral wall portion of the cavity resonator into a plasma generation chamber. The plasma CVD apparatus according to claim 9, further comprising control means for relatively controlling the flow rate of the introduced gas. 15. A gas flow introduced into a plasma generation chamber from a gas inlet formed in a shaft portion of the cavity resonator, and a gas flow introduced into a plasma generation chamber from a gas inlet formed in a peripheral wall portion of the cavity resonator. 10. The plasma CVD apparatus according to claim 9, further comprising control means for individually controlling a flow rate of the introduced gas. 16. The plasma CVD apparatus according to claim 9, wherein each of the gas introduction ports is set to face a plasma generation space on the substrate. 17. The plasma CVD apparatus according to claim 9, wherein a blowing angle of a gas inlet formed in a peripheral wall portion of the cavity resonator is set to 15 ° or less with respect to a substrate surface. 18. A microwave inlet of the cavity resonator,
10. The plasma CVD apparatus according to claim 9, wherein a slot is further provided between the slot and the slot to reduce the bias of the microwave. 19. A microwave supplied from a microwave generator is resonated by a coaxial cavity resonator, and supplied from a plurality of gas inlets provided on a lower portion and a peripheral wall portion of a shaft of the cavity resonator. Introduce CVD gas into the plasma generation chamber,
In the plasma generation chamber, the gas flow flowing from each of the gas inlets to the substrate surface is made uniform, and the CVD gas introduced is resonated by the cavity resonator and strengthened by microwaves radiated through the coupling plate. A plasma CVD method characterized by generating uniform plasma and forming a uniform thin film on the surface of a substrate. 20. A microwave supplied from a microwave generator is resonated by a coaxial cavity resonator, and a CVD gas is supplied to a plurality of gas flow passages formed inside the axis of the cavity resonator and inside the peripheral wall. Flow and supply C from multiple gas inlets
VD gas is introduced into the plasma generation chamber, and in the plasma generation chamber, the gas flow flowing from each of the above gas inlets to the substrate surface is homogenized and resonated by the above-mentioned cavity resonator to be introduced to the CVD gas to be strengthened and coupled. A plasma CVD method characterized in that uniform plasma is generated by microwaves radiated through a plate and a uniform thin film is formed on the surface of the substrate.