JP3014380B2 - System and method for directly writing patterns using multiple variable shaped electronic beams - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The field of the invention is that of integrated circuit lithography, especially multi-beam lithography for writing patterns directly on wafers without the use of masks or reticles.
A system and a method of operating it.

[0002]

2. Description of the Related Art Generating an integrated circuit pattern on a wafer is technically difficult in the following two points. First, integrated circuits contain large amounts of pattern information, with up to 2 × 10 ¹⁰ pattern features on a given process level of the chip. Second, the minimum feature size continues to shrink by half every six years to 130 by 2003.
nm features are expected in full scale manufacturing. These requirements further increase the speed and spatial resolution requirements of lithographic methods for producing patterns on a chip.

[0003] Current lithography generally first creates a pattern on a transparent reticle and then uses UV light to light project the pattern onto a wafer. This projection method is repeated a plurality of times, once for each chip on the wafer. The spatial fidelity of the pattern on the chip is limited by the ability of the light projection system to resolve features due to diffraction. This limitation, which occurs even with a virtual perfect reticle, is significant for optical systems. Further, the reticle pattern necessarily has defects, which also limits pattern fidelity on the wafer. Further, the manufacture of reticles is time consuming and expensive.

[0004] A known solution is to write the pattern directly on the wafer using a focused electron beam (electron beam). The diffraction-limited resolution of the electron beam is not limited for this purpose, since the wavelength of high-speed electrons is approximately ^1/4 of that of ultraviolet light. In addition, a patterned reticle is not required since the pattern is stored in computer memory and transferred directly from there to the wafer, without the need for projection.

Unfortunately, existing techniques for directly writing so-called electron beams are too slow to be practical for large-scale manufacturing. The writing speed, measured in units of area swept per unit time, is equal to the ratio of the total writing current to the dose, measured in units of charge per unit area. Write current required for minimum acceptable write speed is 100μ
It is about A. This is 10 c at a dose of 10 μC / cm ²
corresponding to the write speed of m ² / sec.

[0006] Existing electron beam systems cannot supply this minimum current. The reason is that as current increases, image blurring due to Coulomb interactions between beam electrons that occur in the beam path [blur].
ring (blur)] occurs and the resolution is reduced. Coulomb interaction occurs because the electrons are discrete charged particles randomly dispersed in the beam. Thus, the electrons exert random repulsions in size and direction. The amount of blurring depends on the current density throughout the optical path. This depends heavily on the optical design of the system.

A system having a narrow beam that illuminates a limited area or field is called a "probe forming" system. Due to the narrow beam, the electrons are close to each other during their flight duration. The strength of the Coulomb interaction is inversely proportional to the square of the interelectron distance. probe·
In forming systems, this distance is small and the Coulomb interaction is strong, thus limiting the available write current. The current in a typical probe forming system is on the order of 0.5 μA, whereas blurring is 50 nm. This resolution is 180n width
While printing m lines is just acceptable, the writing speed is very slow, at least 200 times less.

[0008] A possible solution is to spread the write current over a larger volume, thereby reducing Coulomb blurring. One example is electronic projection printing, which uses an electro-optical image of a reticle to write a larger pattern area with a single flash. However, this is undesirable for two reasons. First, it requires a patterned reticle. Second, all write current must pass through a single small aperture. This is necessary to create contrast in the image. Due to this limitation, Coulomb blurring occurs to a lesser extent with electron projection, as with other probe forming systems.

[0009] Unlike probe forming systems, systems that distribute current over a large volume in the optical path are called "dispersion". One way to construct such a system is to use multiple beams. The total writing current is given by the number of beams × the current in each beam. If the number of beams is large enough, the current in each beam is low enough that Coulomb blurring does not impair the resolution.

Important elements of such a system include an electron source, a lens, means for positioning the beam with respect to the writing surface, and means for determining the numerical aperture (NA) of the optical system for each beam. Each of these elements must be such that all beams act in a coordinated manner, and also act on each beam in a manner that maintains the correct relationship with each other.

[0011] Yasuda et al. (US Patent Application No. 5,359,202)
No. 1) uses a single electron source and irradiates an array of blanking apertures with electrons to generate multiple beams. The beam bundle then passes through an optic containing a single aperture defining the NA. As noted above, this configuration is susceptible to Coulomb blurring in the system and thus limits the useful current. Despite the use of multiple beams, this is a probe forming system rather than a distributed system.

[0012] JESchneider et al. (Journal of Vacuum Sci
ence and Technology, B 14 (6), p.3782 (1996)), uses a semiconductor on a glass photocathode as the electron source for a parallel multiple electron beam system for lithography.
Even in this system, the write current must pass through a single aperture that defines the NA. As the author correctly pointed out, the useful current is limited to about 10 μA by Coulomb interaction. This is equivalent to the required current.
A factor of one and too small to actually use for production.

MacDonald (US Patent Application No. 536302)
No. 1) uses a large parallel array of cathodes composed of a number of individual electron sources, explicitly a field emission tip. Each beam projects a single pixel onto the writing surface. In this case, the light source luminance needs to be relatively high so that the total write current is suitable for a high write speed. The focusing and positioning functions are achieved by separate lenses and deflectors for each beam. These structures consist of microscopically small elements that are precisely positioned with respect to each other. Care must be taken that each beam is exactly aligned with its optics. Otherwise, aberrations that impair the resolution will occur. No mention is made of how to determine the numerical aperture (NA). However, it is reasonable to assume that each beam has a separate beam definition aperture that determines the NA.

A common problem in distributed systems is that of alignment. In the prior art, the well-known problem of system alignment is N times, or the number of modules in the system.
The prior art has sought a distributed system that avoids the alignment problem.

[0015]

SUMMARY OF THE INVENTION The present invention is directed to a direct write having several modules including a separately controllable small beam electron beam system for writing in parallel on a wafer manufactured by lithographic techniques. The present invention relates to an electron beam device.

The present invention is directed to a direct-write electron beam apparatus having several modules including a separately controllable small beam electron beam system for writing in parallel on a wafer.

The present invention is directed to a method of writing a pattern on a workpiece by a number of modules including a separately controllable small beam electron beam system that writes in parallel on a wafer.

[0018]

SUMMARY OF THE INVENTION A feature of the present invention is that the individual beams do not cross each other, thus substantially eliminating the effects of blurring and crosstalk.

Another feature of the present invention is that the individual beam modules are arranged in an array and the optical elements are shared by all modules, thus substantially reducing the need for separate microscopic components. That is.

One feature of the present invention is that 1 m
The use of a set of closely spaced beam modules having lateral dimensions on the order of m and longitudinal dimensions on the order of 0.25 mm, thereby creating an accurate alignment of the lateral dimensions.

Another feature of the present invention is that the individual beam modules are arranged in an array and the optical elements are shared by all modules, thus substantially reducing the need for separate microscopic components. That is.

Another feature of the present invention is that the apertures, deflection electrodes and other elements of the individual modules are manufactured using lithographic techniques, and thus alignment and location in the structure (eg, the individual electrodes in the deflection structure). The alignment between modules on a given plane is handled automatically by the mask manufacturing process.

Another feature of the present invention is to use a uniform magnetic field parallel to the axis of the module, which field together with the accelerating electric field forms an image of the low intensity emission surface on the shaped aperture plate, From this, the same uniform magnetic field, together with the transverse uniform deflection electric field, deflects the spot in a direction perpendicular to the movement of the wafer stage, thereby covering the entire area where the array of modules is to be written.

The system consists of a set of planar structures including lithographically defined components such as deflection electrodes, interelectrode connectors and drive circuits. The beam module is formed from corresponding components of various structures.

Another feature of the invention is that the numerical aperture of the system is defined by the ratio of the lateral velocity of the electrons at the emitter to the axial velocity after acceleration, and thus a separate physical aperture to perform this function. Is unnecessary.

One feature of the present invention is to maintain the spacing between the individual beams, thereby eliminating blurring and crosstalk effects.

Another feature of the invention is that it uses multiple rows of modules that write the same pattern, so that stitching errors at the boundaries between modules are reduced by averaging.

[0028]

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a system having a plurality of electron beams used to write an integrated circuit pattern directly on a wafer without using a reticle. The beams form a dispersive array. That is, all beams are spatially separated from each other over the entire length of the optical path. The basic structure of this device consists of a series of parallel planar electrodes oriented perpendicular to the beam axis. The beam passes through apertures in these electrodes and strikes the wafer, including the surface on which the pattern is written.

The electron source is patterned as a linear array of square emitting regions (emitters), nominally 1 micron on a side, and is generally comprised of planar cathodes separated by a distance of 0.2 mm to 1.0 mm. The cathode is patterned by conventional lithographic methods.

A planar accelerating electrode is arranged at a distance parallel to the cathode. The cathode array is biased at a constant negative DC potential with respect to the accelerating electrode, thus resulting in a uniform electrostatic accelerating force vector oriented parallel to the optical axis. A constant, uniform magnetic field oriented parallel to the optical axis penetrates the entire device. The superposition of the uniform axial electrostatic and magnetic fields forms an electro-optical image of the cathode in the plane of the accelerating electrode. This occurs similarly and simultaneously for each beam in the array. This focusing condition requires a specific relationship between the strength of the electrostatic and magnetic fields and the distance from the cathode to the accelerating electrode, as mathematically detailed below.

The accelerating electrodes are lithographically patterned as an array of square apertures, nominally one micron on a side. Each aperture matches one emitter. Thus, each beam passes through its own aperture and is imaged by a uniform axial magnetic field on a wafer positioned parallel to the planar cathode and accelerating electrodes. The end result so far is that with an emitter of the correct size and spacing, an array of square spots will be focused on the wafer. The magnification is 1, so the emitter images 1: 1 on the wafer.

An array of deflection plates is located between the acceleration electrode and the wafer. These plates are oriented parallel to the beam and thus perpendicular to the wafer. The plates run the length of the device and have rows of beams between each pair of adjacent plates. The plate is excited with a variable electrostatic potential that alternates in sign with respect to the adjacent plate. This creates a uniform laterally polarized electrostatic field in the space between the plates. The electric fields are equal in magnitude, but alternate in direction with respect to adjacent columns of the beam. The combined action of the uniform transverse electric field and the uniform axial magnetic field causes a net deflection of each beam at the wafer in a direction parallel to the deflection plate. The wafer is fixed to a mechanical stage and moves in a direction perpendicular to the deflection. The complete two-dimensional addressing by the beam is achieved by the combined action of the deflection and the mechanical action acting at right angles to each other. The pattern is covered with stitched subfields, and each beam writes its own subfield.

Up to this point, all beams have undergone the same focusing and deflection. However, adjacent rows of beams are deflected in opposite directions. To incorporate pattern-specific information, a plane deflector is placed between the cathode and the acceleration electrode. This deflector is manufactured by micromechanical means and has holes for the passage of each beam. The deflection is applied independently to each beam in synchronization with the stream of pattern data and two-dimensional addressing. This deflection translates the image of each square emitter with respect to its corresponding square aperture in the accelerating electrode. Thus, the accelerating electrode has the additional function of an array of shaping apertures to form multiple deformable beams. Each square spot is independently shaped into a rectangular spot of variable size and aspect ratio depending on the pattern information to be printed. By deflecting the image of the square emitter completely onto its corresponding accelerating electrode, each beam can be independently erased and does not reach the wafer. The entire deflector array is biased to a DC electrostatic potential midway between the cathode and the acceleration electrode, which is selected so that the deflection electrostatic field is uniform in the space between the cathode and the deflector and the acceleration electrode.

The end result of this overall configuration is that all beams are used simultaneously, each writing a distinct and specific piece of the overall pattern. The simplicity of manufacture results from all electrodes being planar and manufactured by conventional thin film, lithographic, and micromachining techniques. The simplicity of the alignment results from the fact that the main focusing and deflection functions are achieved by uniform magnetic and electrostatic fields. This results in all beams residing in the same electromagnetic environment. In addition, matching is not important because the field is uniform.

The beam is characterized by its brightness, defined as the current per unit area per unit solid angle. Luminance is the amount stored in any optical system. This means that the brightness at the exposed plane, in this case the wafer, is the same as the brightness of the beam source. For a given current and solid angle of illumination, the required brightness is inversely proportional to the exposed area.
This area is proportional to the number of pixels exposed per flash. The more pixels that are exposed in a single flash, the lower the brightness required from the beam source. In the most basic case, a single pixel is exposed by each beam in one flash. In this case, a beam source having the maximum luminance such as a field emitter is required.

If multiple pixels are exposed in a single flash, such as in the case of a deformable beam, the required source brightness will be smaller than for a single pixel by a factor equal to the number of pixels per flash. In a deformable beam system, for example, 16 to 256 pixels are exposed in a single flash. Therefore,
The required source brightness is much smaller than in a single pixel system.

High intensity beam sources are generally less stable than low intensity beam sources because their emission characteristics change more easily due to external influences such as insufficient operating vacuum.
Life is short. Therefore, systems that expose a large number of pixels per flash tend to be preferred, as such systems generally require relatively low source brightness. For example, a deformable beam is preferred over a single pixel beam.

From the discussion herein, one of ordinary skill in the art will appreciate that a number of features are desirable, if not absolutely necessary, for a practical lithography system for the next generation of integrated circuits.

First, the system does not require a patterned mask or reticle. This is because it represents a costly, time consuming and performance limiting step in the overall process.

Second, the system is decentralized, with no general restrictions to avoid Coulomb blurring.

Third, individual beam segments or individual beams can be accurately optically matched so that mismatch aberrations do not degrade resolution.

Fourth, the beams must be independently controllable and must not interact with each other in a predictable or uncontrollable manner.

Fifth, the total write current that can be used should be high enough that a sufficient write speed of at least 10 cm ² / sec is obtained without significant degradation in resolution.

Sixth, multi-pixel beams, such as deformable beams, are preferred over single-pixel beams because they require less source intensity.

FIG. 1 is a perspective view of a single module 100 of the system according to the present invention. In FIG. 1, an electron emitter 12 having a cross section of about 1 micron square emits a beam of electrons that generally moves downward in the figure due to the attractive force of an accelerating electric field.
It spirals around a uniform magnetic field applied parallel to the beam axis 101 of the module 100. The array of emitters 12 in the system is called an emitter array,
The array of apertures 22 will be referred to as the aperture beamforming array. The emitter and aperture are vertically aligned and separated by a source spacing along the y-axis.
The apertures are formed in an array of deflector modules that extend along the z-axis into the beam shaping deflector area. The accelerating voltage between the emitter and the aperture plate creates a parallel accelerating electric field that establishes an accelerating voltage distribution along the z-axis.

For a given combination of the distance from the source 12 in the source plane to the acceleration shaping plate 20 in the beam shaping plane and the acceleration voltage applied between the source 12 and the plate 20, The beam focuses on the plate 20,
There is a unique value of the magnetic field strength (according to equation 1 below) from which the electro-optical image of the beam source 12 is formed.

A deflection voltage is applied to the deflector electrodes 62-65 by external biasing means (not shown) to deflect the focused square spot on the plate 20. Depending on the amount of deflection, some or all of the beam is stopped by plate 20 and the rest of the beam passes through aperture 22. Thus, the transmitted beam has a rectangular shape with a variable height and width, depending on the amount of deflection. This rectangular spot forms an image on the wafer 4. Spot formation is performed in synchronization with a stream of pattern information stored in computer memory and later retrieved at the time of writing. If necessary, erasing is performed by shifting the beam so that it completely hits plate 20 and does not pass through aperture 22.

The deflectors 66-69 at the bottom of the module perform the same function as the electrodes 62-65, but have a different function of correcting small beam position errors on the wafer 4. Further, electrodes 66-69, together with electrodes 70-73, are used to correct astigmatism that necessarily results from small mismatches between elements. This astigmatism correction is performed by the electrode 68
This is accomplished by applying the same voltage on electrodes 66 and 67, together with equally opposite voltages on and 69. This forms a quadrupole lens with focal lines oriented along the x and y axes. Voltage is applied to electrodes 70 and 7
1, and equally opposite voltages are applied to electrodes 72 and 73. This forms a quadrupole lens with the focal line oriented at 45 degrees to the x and y axes.
Thus, by properly selecting the voltages of the electrodes 66-73, not only astigmatism of any magnitude and direction can be corrected, but also an appropriate deflection correction to the beam.

An intermediate image 24 of the spot formed is formed on the plate 21 by the action of a uniform magnetic field spread throughout the apparatus. The beam passes through an aperture 23 that transmits the shaped beam. In the drift region below the plate 21, the magnetic field is still present, forming an image 25 of the shaped spot on the wafer 4. The large deflection electrodes 5 and 6 are driven at a potential equal and opposite to the wafer ground potential, thus creating a transverse electric field oriented along the x-axis. The combined effect of the vertical magnetic field (z-direction) and the horizontal electric field (x-direction) is great for electrodes 5 and 6
Causes a net deflection (y-direction) parallel to Electrodes 5 and 6 can be made from any non-magnetic conductive material.
Molybdenum is preferred because it is easily cleaned by vacuum firing, can be polished to a fine surface finish, and is sufficiently hard to maintain dimensional stability.

The distance in the drift space between the plates 20 and 21 is determined by the image 24 of the shaped spot.
Are formed on the plate 21. The condition for this is that the z-distance between plate 20 and plate 21 is twice the z-distance between emitter 12 and plate 20. The distance in the drift space between plate 21 and wafer 4 is selected to be equal to the distance between plate 20 and plate 21. As a result, a focused image 25 of the formed spot is formed on the wafer 4. The plate 21 and the wafer 4, both held at ground potential, serve to terminate the electric field of the large electrodes 5 and 6, so that the fringe electric field behaves well, so that there is no significant loss of resolution with deflection.

The wafer 4 is fixed on a mechanical stage that moves along the x-axis. Obviously, the stage movement and y deflection can cover all points in the strip of the wafer having the width defined by the maximum deflection of the beam and the length set by the stage. An array of these modules 100 can be set up to cover an entire chip, a strip on a wafer, or even an entire wafer.

Representative dimensions and electromagnetic requirements of the preferred embodiment are set forth below. Beam acceleration voltage 50000 V Magnetic field strength 948 Gauss Distance from emitter 12 to aperture plate 20 25 mm Distance from aperture plate 20 to plate 21 50 mm Distance from plate 21 to wafer 4 50 mm Length of deflection electrodes 5 and 6 in z direction 48 mm Center distance between deflection electrodes 5 and 6 1.0 mm Thickness of deflection electrodes 5 and 6 0.50 mm Width of deflection subfield stripe +/- 0.125 mm Maximum voltage of deflection electrode +/- 7.8 V Center distance 1.0mm

From the above dimensions, it is apparent in FIG. 1 that the horizontal scale (x-axis and y-axis) has been greatly extended in the vertical direction (z-axis) for purposes of illustration. Those skilled in the art will appreciate that the above parameters may change as the situation demands or as a result of design choices.
Other things being equal, the shorter the path length between the source plane and the wafer, the better the system is less susceptible to stray magnetic fields and therefore more stable. The system according to the invention is small in nature, since nothing is gained by extending the beam path. Higher accelerating voltages are preferred, if a corresponding magnetic field is possible. A suitable upper limit for the beam path length of the system according to the invention is 20
cm. Above such a value, the sensitivity to stray magnetic fields is increased and no offsetting advantage is obtained. For a total length along the z-axis of less than 200 mm, embodiments of the present invention are qualitatively different in scale from prior art electron beam systems having a total length of about 2 m.

The equation for the distance z between the object plane and the image plane is given by Equation 1 for each section (MKS
Assume C units).

(Equation 1)

[0055] In the above equation, E _a is accelerating field along the axis 101, eV ₀ is the kinetic energy of the object plane before acceleration, B
Is the magnetic field strength, e is the particle charge, and m is the particle mass. The first term on the right side corresponds to the drift space when E _a = 0, and the second term corresponds to the acceleration region when V ₀ = 0. Magnification is 1
It is. The coefficients of spherical aberration and chromatic aberration are both z / 2
be equivalent to. Where z is the axial distance between the object and the image. The net deflection d at the end of the deflection drift space is given by equation 2.

(Equation 2)

In the above equation, _Ed is a uniform deflection electric field intensity, eV
Is the kinetic energy of the plate 21 (and the wafer).

Referring to FIG. 2, y perpendicular to the paper surface
An array of modules 100-1 to 100-4 viewed along an axis is shown. The set of four brackets at the top of the figure defines the location of the electron source 12 and the area through which the beam travels. As a rule, only one column (1
00-1 and its counterpart). Other modules are used when the extent of the x-axis deflection does not reach adjacent modules, or provide redundancy to replace defective modules. The write speed is proportional to the product of the number of modules and the current in each module. The current in each module is limited by the effective current density of the emitter. Therefore, it is advantageous in practice to use as many modules as possible to maximize the writing speed. If the module 100 is too close, the electric fields used for shaping and subtle deflection will begin to overlap, creating unwanted crosstalk between the beams.
This practical consideration places a lower limit on the separation of the modules by about 0.2 mm.

At the top of the figure, layer 1 is the electron emitter layer 12
To form a continuous flat bulk substrate. This composite layered structure is composed of materials specific to the emitter technology used. The emitter must be patterned, capable of providing the required current density of the order of 1.5 A / cm ^2, capable of providing stable and uniform emission, and of long life. A technology that has proven to satisfy these requirements is the GaAs photocathode (JESchneider et al., JV
acuum Sci.Technol.B14 (6), 3782 (1996)). In this case, the substrate 1 is made of glass with an attached thin film layer made of GaAs and cesium oxide forming the emission region 12. The various electrodes are biased by a conventional power supply not shown in this figure for simplicity.

Between layer 1 and layer 20 is a sandwich layer including deflector electrodes 62-65, indicated by bracket 7. This is shown in detail in FIGS. 3, 4 and 5 and will be described later. Flat cathode substrate 1, shaped aperture array 2
0, and all of the shaped deflector arrays in layer 7, are fabricated separately as lithographically defined planar structures using established film deposition methods. They are each supported from their edges and adjusted during assembly by shims so that the elements are parallel to each other. Although each element flexes slightly under gravity, the amount of flexure on the order of 0.1 micron is negligible compared to the tolerances required to properly set up the optics. The alignment of the three layers is performed using light for coarse alignment and then using an electron beam for fine alignment. An advantageous feature of the present invention is that the deflection system can be set up during calibration to compensate for alignment errors.

The individual emission surfaces are not separately addressed in the illustrated example, but are maintained at a common potential. One of ordinary skill in the art will appreciate that the conventional measure of uniformity is that the emitted current is uniform up to +/- 1%, which is readily available with current technology, eg, night vision equipment.

An additional requirement for the cathode is that the transition between the (uniform) current in the beam and the non-emissive region outside the beam be sharp enough such that the corresponding transition in the resist is within specification. The exact requirements for a particular application will depend on the characteristics of the resist used and the particular dimensional tolerances concerned. A useful rule of thumb is to make the width of the transition area less than 20% of the line width printed on the writing surface. For a 100 nm write line, this requires less than 20 nm edge sharpness of the electron emission region. This falls within the achievable capabilities of modern lithography.

The shaping aperture plate 20 is a lithographically defined square aperture (about 1 μm on a side).
m) as a thin film stencil structure having Ideally, the material and thickness are selected so that the beam does not penetrate the material when the beam is directed onto the material. Although a number of materials can be used, gold or platinum is preferred. These materials have a high atomic number and a high density and therefore have a high stopping power for a given thickness. A 2 micron thick foil for 50 keV electrons completely blocks the beam and can pattern high quality edge sharp square holes due to its thickness. This creates the sharp image needed on the writing surface to print fine lines 100 nm or less in width. The choice of gold or platinum has the additional advantage that these materials do not form surface oxides that can become charged and deflect the beam in unpredictable ways.

Alternatively, plate 20 may be a composite structure having thicker ribs supporting a patterned stencil film, such as that described in US Pat. No. 5,466,904. The support rib has a larger aperture about aperture 22 to eliminate beam obstruction. It is not important that the film completely block the beam. It is sufficient that the film scatter the beam without blocking or absorbing the beam. This approach has the advantage that little or no energy is deposited in the film and therefore there is no dimensional change due to thermal expansion. Scattering current is then blocked by structures 8 and 9, thus preventing unwanted exposure of the target wafer by the scattering current. Again, a variety of materials can be used, but silicon is preferred for the ribs and films, which can use standard patterning techniques.

The deflection electrodes 5 and 6 continue in a direction perpendicular to the drawing of FIG. The rows of beams pass between adjacent pairs of electrodes. The same variable potential is applied to all the electrodes 5, and the variable potential having the same magnitude and the opposite sign to the electrode 5 is applied to all the electrodes 6. This results in a uniform transverse electric field superimposed on the existing uniform axial magnetic field. This sweeps the focused spot on the wafer 4 perpendicular to the drawing across the area of the "subfield" swept by the beam deflected as the stage moves the wafer.
All beams make the same angle to the z-axis, so they are parallel in the upper section as well as in the lower section of the system. Adjacent rows of the beam deflect in opposite directions along the y-axis. In this way, adjacent beams in a given row are equidistant even with deflection. Deflectors 5 and 6 repeat for adjacent rows of beams. This requires an array of parallel plates generally 0.5 mm thick and 1.0 mm center-to-center to match the spacing between adjacent rows of beams. When these plates extend the length of the beam array, their spacing can be set precisely by insulators at the ends of the plates. These insulators are located far enough from the beam that the accumulated surface charge does not cause unwanted deflection of the beam.

Each beam is composed of a number of electron orbits. Beams 51-54 schematically show a particular trajectory to explain the details of the electro-optical behavior. Beam 5
Reference numeral 1 denotes a beam envelope (envelope) of a cone of an electron beam emitted from a center point of the emitter 12. Beam source 12
In addition, the three crossovers are plates 20 and 21
And at the wafer 4. Each of these three planes produces a sharply focused image of a square emitter. Angle 50 represents the numerical aperture (NA) of the system.

The numerical aperture or NA is defined in classical optics as the product of the refractive index and the sine of the angle formed by the end ray with the optical axis. However, these quantities are defined in image space. The maximum ray angle is usually represented by the exit pupil, which is determined by the physical beam limiting aperture. The importance of NA comes from Abbe's theory of diffraction-limited resolution of microscopes. This theory shows that resolution is inversely proportional to NA.

This law is applicable to optical lithography systems, as well as the present electron beam system. For electrons, the refractive index is defined as the ratio of electron momentum in image space divided by that of a "virtual object" defined by extrapolating the electron beam backward from the acceleration region. This ratio is here equal to one. Therefore, the index of refraction is equal to one. For fast electrons, the electron beam gradients are all much less than one. Therefore, the NA is measured in the image plane and is closely approximated by the gradient of the extreme electron beam. This gradient is equal to the maximum lateral velocity component divided by the average axial velocity component.

In the present system, the NA is given to a good approximation by the square root of the ratio of Kt divided by Ev. Where k is the Boltzmann constant, T is the absolute temperature of the emission surface,
e is the electron charge and V is the acceleration potential. In the preferred embodiment, T = 300K, V = 50,000 volts, and NA = 0.00071. The diffraction-limited resolution defined by Abbe's theory is 0.61 × electron wavelength ÷ N
Given by A. The electron wavelength is 0.0055 nm and the resolution obtained is 4.7 nm. This value is
It is suitable for lithography up to 50 nm line width suitable for next generation semiconductor devices.

This is achieved without the need for a physical beam definition aperture. This is of great practical importance if a physical aperture is present, as tight alignment tolerances on the order of one micron are required to ensure proper centering of the beam in the aperture. Such alignment tolerances are difficult to achieve in practice. Further, those skilled in the art will appreciate that if a physical aperture is present, interaction with the beam will accumulate contaminants that will accumulate charge. This results in unnecessary and unpredictable deflection of the beam, thus reducing placement accuracy.

In electrode arrays 7, 8, 9 and plate 2
The apertures in 1 are advantageously oversized with a nominal dimension of 30 μm to keep the material well separated from the beam. Since the electron source dimensions are about 1 μm and the imaging is 1: 1, none of the apertures in the system acts as a beam limiting aperture in the usual sense of clipping a significant amount of the beam.

Beam 52 shows the same beam envelope as beam 51, but with the addition of individual electron trajectories, indicated by dashed lines. These trajectories spiral spirally about the magnetic field axis, and lie in the transverse plane between each pair of image planes.
Form two cyclotron orbits. The terminology is used herein to describe the beam as traveling parallel to the z-axis, etc., even if the electron orbital envelopes are parallel, even if the individual electrons do not travel in a straight line. You.

The beam 53 represents a divergent electron source 12 composed of a number of beam envelopes uniformly distributed on the emitter surface. Again, three intermediate image planes are shown at plates 20 and 21 and wafer 4, respectively.

The beam 54 shows the action of the voltage applied to the shaping deflector 7. The rightmost bundle of the three bundles is blocked by plate 20 and the remaining beam passes through aperture 22. The axial position of the image plane is not disturbed by this shaping action. Further, the lateral position of the right hand edge of the aperture 22 is similarly unobstructed.
The shaped spot is smaller than the emitter 12 because a portion of the beam is obstructed.

Referring now to FIG. 3, there is shown a schematic top view of the wiring configuration of the deflection assemblies 7, 8, 9. This figure is not to scale, but is intended to convey how it is constructed. Two separate layers are shown. The upper layer (indicated by reference numeral 32) is composed of conductive lines extending vertically in the figure. This corresponds to the deflector electrode 6 in FIG.
4 and 65 connectors (or connecting members).
The bottom layer (indicated by reference numeral 34) is made up of similar lines extending horizontally in the figure and includes connecting members for the electrodes 62 and 63 of FIG. These layers are electrically insulated from each other by an insert insulating film 260, discussed below with respect to FIG. Arrow 2-2 indicates the field of view of FIG. The x-axis and y-axis are aligned with the array of apertures and thus rotate with respect to the figure as shown in the lower left axis of the figure. Thus, the individual square apertures in the deflector array are shown in FIG.
As shown in FIG. This is not important because the emitter 12 and the image 25 do not match exactly. Furthermore, deflection in any direction is possible by a suitable combination of the deflection voltages in the two axes.

The upper left aperture corresponds to the module on the left in FIG. The four conductors addressing this aperture are designated 62-1 through 65-1 and correspond to the single module diagram shown in FIG. The conductor 62-1 enters from the right side and terminates at the aperture. Similarly, the conductor 63-
1 enters from the left, conductor 64-1 enters from the bottom, and conductor 65-1 enters from the top. Each connection member supplies only one deflector electrode of only one aperture. In this way, each beam is addressed independently, and all beams are each addressed simultaneously with their own drive voltages. The various lines are connected to controllers not shown in this figure. This is the pattern data
A DC bias is supplied together with the deflection signal at the correct time in synchronization with the stream.

The upper right aperture corresponds to the second module from the left in FIG. This is wired similarly to the first module. The four conductors are designated 62-2 through 65-2. Each conductor is only one for all beams in the figure
The two deflector electrodes are addressed separately, thus eliminating the need for crossovers as required for rectangular arrays. A rectangular deflector array can also be used if desired.

The side of the deflector aperture is about 0.03 nm, but the pitch is 1 mm on the x-axis and 0.25 mm on the y-axis. This creates a large space that brings all conductors to the edge of the array. Conductors that are maintained at a constant potential are vertically arranged between each pair of deflector leads. This provides an electrostatic shield against stray magnetic fields that can deflect the beam in unwanted ways. The vertical space between conductors is about 5 μm. The multilayer deflector structure is manufactured using conventional lithographic and thin film techniques.

The deflector electrodes 62 to 65 are called lithographically defined electrodes. That is, they are conventional lithographic methods, for example, depositing a blanket layer of aluminum on an insulating layer, etching the blanket layer to provide the desired electrodes and connection members (and shielding electrodes 61 extending parallel to the connection members). Only means to be formed by leaving. In that case, an insulator is deposited to fill the empty space left by the etching and form a planar surface for the next insulating layer. One example is aluminum and polyimide for conductors. This is sufficiently fluid to fill the gap and leave a substantially flat top surface.
Boron-doped silicon dioxide "Reflow Glass"
When is used, the upper surface can be flattened by heat treatment.

Referring now to FIGS. 4 and 5, there is shown a cross-sectional detail of one of the multilayer deflector structures 7, 8, 9 as viewed toward one corner of the square aperture of FIG. . This sandwich structure comprises five conductive layers 31 all separated by insulating layers not shown in FIG.
~ 35. Layers 31, 33, 35 are maintained at a constant voltage selected to accurately maintain a uniform accelerating electrostatic field in the space between plate 1 and plate 20. Layers 32 and 34 are lithographically patterned to form a deflector. The actual deflection electrode consists of the exposed edges of the connecting members, of which 62 and 65 are shown by way of example. Deflection conductors 62 and 6
5 are interspersed with lithographically defined shielding electrodes 61, also shown in FIG. 3, which allow for electrostatic isolation of each deflector from the other deflectors. The vertical extension of the insulating layer 260 or a separately formed insulator separates the connection member and the shield electrode. Shielding electrode 61 is maintained at a constant potential, also selected to accurately maintain a uniform accelerating electric field in the space between plate 1 and plate 20.

FIG. 5 shows line 4B of FIG.
4C shows a section along 4B. Top conductor 31 (including electrodes 65-1 and 64-1) separated from layer 32 by insulator 260 is coupled to bias controller 40
(Shown in FIG. 5) to the appropriate DC level. Similarly, layer 33 is biased by power supply 41, layer 35 is biased by power supply 42, and shield electrode 61 (included in layers 32 and 34) is biased by power supply 43. The voltage on the electrodes 31, 33, 35 and 61 is constant and does not depend on the pattern information to be written. Thus, the power supplies 40-43 are independent and disconnected from the pattern electronics. In this figure, it can easily be seen that the edges of the electrodes 31, 64, 65, 33, 35 collectively define the two surfaces of the deflection aperture 22. Similarly, the edges of the electrodes 31, 33, 62, 63, 35 collectively define the other two surfaces of the deflection aperture 22.

The pattern electronics are represented by boxes 44-48. A pattern storage device 44, such as a disk drive, sends the pattern data to a pattern system controller 45. System controller 4
5 is a general purpose computer with associated auxiliary circuitry designed and directed to direct voltage signals to the various electrodes in synchronization with the pattern data stream.
Molding controller 46 generates molding voltage signals for plates 62-65. These signals are summed with an appropriate constant bias voltage and then directed to shaped electrodes 62-65. Although only four leads are shown schematically in the figure, in practice four leads are sent separately to each beam using the conductor pattern shown in FIG. Thus, the number of leads is four times the number of beams. Conventional connectors, such as ribbon conductors, transmit signals between the controller 46 and the shaping deflector 7.

2 indicated schematically by the controller 46
Two additional controllers provide signals to elements 7 and 8, respectively, for subtle deflection and astigmatism correction. These two controllers are in all respects controllers 46
Behaves like.

The main deflection controller 47 supplies deflection signals to the plates 5 and 6 in synchronization with the pattern data stream. The voltages at 5 and 6 are variable, but equally opposite at all times. Only two leads are required from the controller 47. All beams deflect simultaneously in the y-axis by an amount proportional to the voltage, and adjacent rows of beams deflect in the opposite direction of y.

The stage controller 48 receives the position indication signals from the stage 500 of FIG. 6, returns them to the system controller 45,
Give the data. Preferably, the mechanical stage position error is corrected via a conventional feedback loop where the laser interferometer senses the stage position. The difference between the measured position and the intended position includes an error signal that is returned to deflector 8 to correct the beam position. The correction signal includes a global correction provided equally to all beams, and a local correction provided independently to each beam. Large stage position errors are corrected by incorporating a variable delay in the write time. Only when the stage is within a predetermined distance from its intended position is the beam unblank and write.

The conductive layers 31-35 are formed from metal films deposited by sputtering, evaporation, electroplating, or other conventional means. The metal layer is composed of gold, platinum, or molybdenum, and the insulating layer is composed of, for example, silicon monoxide or silicon nitride, but there are other candidate materials. The insulating layer is etched to a nominal recess distance of about 100 μm so that the insulator does not directly hit the beam. This prevents charging that would otherwise deflect the beam in an unwanted manner. A recess can be formed in the insulating layer using a conventional wet etch or selective plasma etch.

The structures shown in FIGS. 4 and 5 are represented using the term "deflection composite structure". That is, the first (lower) portion of the lithographically defined deflector electrode
The pair comprises an electrical connection member formed by lithographic methods from an adhesion layer firmly attached to the upper and lower insulation layers and the in-plane insulation layer separating the connection member providing electrical shielding from the in-plane shield electrode (eg, 61). For example, 65 in FIG.
-1, 64-1, 63-1 and 62-1). A second or upper pair of lithographically defined deflector electrodes oriented perpendicular to the first pair has the same structure and is formed from layers deposited on the first set of layers. . The bias electrode layers are interspersed vertically in this structure, depending on the sensitivity to perturbations in the acceleration voltage distribution of the application to be implemented.

Referring to FIG. 6, the axis is the beam axis 10.
An overall schematic diagram of one embodiment of the present invention is shown, showing a solenoid 550 including a wire wound winding on a hollow cylinder oriented parallel to one. The entire device is contained in a solenoid, thus ensuring uniformity of the magnetic field.
The solenoid winding 550 extends above and below the stage 500 with the wafer 4 fixed to it, ensuring uniformity of the magnetic field on the writing surface.

The overall homogeneity of the magnetic field is ensured by confining the entire device between two parallel pole pieces 570 of high magnetic permeability, shown schematically in FIG. The pole pieces are oriented perpendicular to the axis of the solenoid 550 and the beam. The pole piece has the added advantage of protecting the device from unwanted stray fields that would otherwise deflect the electron beam in an uncontrolled manner.

An optional feature of the present invention is to use additional current windings at various locations around the device to ensure local uniformity of the magnetic field. Specifically, the field strength is locally adjusted as a function of the abscissa using a small, independently excited, trim coil 580 distributed around the inner surface of the pole piece. In addition, the windings 590 (or changes in turns per unit length) surrounding the entire device and distributed along its length are used to adjust the magnetic field strength as a function of the z coordinate. This changes the focusing power along the optical path, thus compensating for electrode spacing inaccuracies.

The extent of stage movement and the width of deflection are selected such that adjacent subfields defined by adjacent beams are perfectly abutted at all subfield boundaries. The small abutment error between the subfields is due to the deflector array 8 having the same structure as the shaped deflector array 7.
, But has the different purpose of moving each beam independently laterally over the writing surface by incremental distances compared to the spot size. Such incremental deflection is achieved by placing the deflector 8 in an axial position approximately halfway between the plates 20 and 21.

There are two alternatives for arranging subfields side by side to fill the entire pattern area. A first alternative, called the wafer mode, is shown in FIG. An array of beams extends over the entire writing surface. The beams are separated by a distance H on the y-axis. The deflection electrodes 5 and 6 are oriented parallel to the beam rows. According to the previous analysis, the net deflection of each beam at the writing surface occurs in a direction parallel to the rows of the beam. The stage is scanned over the entire length of the substrate in the x direction (which is the length of the chip or the length of the entire wafer) in a direction perpendicular to the row of beams. Thus, each subfield includes a stripe of width H, typically 0.25 mm. The length of the stripe is equal to the length of the stage movement, in this case the entire length of the written wafer. The width of each subfield is equal to the width of the deflection. This is selected to be greater than one half of the source spacing between beam axes 101 such that adjacent subfields completely abut their boundaries. The line shown in the figure represents the center path of the beam having a lateral extent such that proper overlap at the boundary is achieved. The snake-like pattern in FIG.
FIG. 3 represents the simultaneous and synchronized action of stage movement 500 in the x-direction and the path described by the individual beams by deflection by plates 5 and 6 in the y-direction. Individual beams are shaped in response to the pattern data stream as they pass over the wafer.

FIG. 8 shows a second method called the chip mode. A rectangular array of beams covers a limited area of the writing surface corresponding to one chip width and chip length, typically 40 mm × 40 mm. First column 600-1 to 600-6
00-m and a second column 601-1 to 601-m are shown. Row spacing W is shown in the upper right corner. The mechanical stage is moved precisely in the x-direction so that adjacent rows of beams are perfectly abutted at subfield boundaries in a direction parallel to the stage movement (referred to as row spacing). Thus, the restricted writing area is filled with rectangular subfields, the length W (typically 1 mm) is equal to the stage movement and the width H (typically 0.25 mm) is equal to the deflection width. Thus, in this example, 16
There are 0 modules and there are 40 modules along the x-axis. After one chip area is exposed, the substrate is moved to the next writing area by relatively coarse biaxial movement. This latter operation, unlike the precise operation used during exposure, can be controlled by separate, less stringent means used in commercial steppers. The overall process is called step-and-scan using the same terms used for photon optics.

An optical structure for independently correcting astigmatism of each beam is also shown in FIG. The structure including the electrically addressable electrodes 66-73 of FIG.
5 except that the voltages applied to the four poles are in a quadrupole configuration. That is, plates 66 and 6
7 has an equal constant voltage, and 68 and 69 are applied with the same voltage as on these two plates, but opposite to the voltage on 66 and 67. In this case, no beam deflection occurs. Corrections are applied to each beam independently. Two such planar devices are used with the individual electrodes rotated 45 degrees with respect to each other. Thus, any axis astigmatism is corrected by the proper choice of plate voltage.

It is desirable to project each beam down onto the writing surface. In that case, the apertures 22 of different potentials
The same plurality of planar aperture arrays are used. 1
One array is used to shape the beam, preferably the top array, and the other array (eg, composite layer 8 or 9 or layer 23) is used to accelerate or decelerate electrons. Thus, a planar array of electrostatic lenses is formed that focuses individual beams without changing the relative position of the beams. By this means, the size of the rectangular spot on the writing surface is controlled. The reduced projection of individual spots reduces susceptibility to defects or imperfections in the emitter or shaped aperture, thereby improving the lithographic quality of the exposed image.

According to the present invention, the spot sizes and relative positions of the individual beams are simultaneously adjusted to the same scale.
It is possible to reduce and project by a factor. In this case, the solenoid 550 is wound a different number of times per unit length along the z-axis. This causes the magnetic field strength to vary with position along the axis, and thus the size of the pattern formed by the array of beams is reduced by a uniform scale factor compared to before the winding density and field strength were uniform. Decrease. The spacing between individual spots and beams is reduced by the same scale factor. This has the advantage that the emission and shaping aperture arrays can be larger than the final image on the writing surface. In this way, defects in the emitter or shaping aperture are scaled down and do not become too large in the written image. The size of the reduced projection factor depends on the gradient of the winding density. Increasing the winding density along the optical path increases the magnetic field strength and causes reduced projection.

An optional way to average the exposure error is
Writing multiple times with a reduced writing dose by a factor equal to the number of columns contributing the same pattern feature. A given feature is written with a different beam for each exposure, so that small variations in beam position and writing dose are averaged. This is accomplished by one or both of two means. First, FIG.
As the mechanical stage performs its normal operation, the different beams in the rows spaced along the x-axis, as shown in
Address a given pattern feature as it passes under the column to which the pattern feature applies. Second, the deflection sub-fields overlap along the y-axis, so that different beams in the same column will have a given pattern feature addressed by a deflection position offset.

Each beam describes a finite area due to the combined action of the deflectors 5 and 6 in the y direction and the movement of the stage 500 in the x direction. It is important that adjacent regions defined by adjacent beams strike their boundaries so that discontinuities in the written pattern features do not occur at those boundaries. The abutment of adjacent fields is called "stitching" the fields. In practice, perfect stitching cannot be achieved due to small errors in the beam position relative to the intended position. The problem is that with the field offset of the position between write passes as described above,
Significantly reduced by writing more than once. In this way, the total dose accumulated is the required dose appropriate for the resist used. This is shown in FIG. 9 for two write passes in chip mode. The solid line represents the same field boundaries as shown in FIG. 8, written by the first column of modules, and the dashed line is spatially offset along the y-axis halfway between the positions of the modules in the first column. Represents the field boundaries of the second write pass performed by the second column of modules. The arrays shown in FIG. 8 are designated as 600-1 to 600-m, 601-1 to 601-m, and so on. The offset array is 650-1 to 65
0-n, 651-1 to 651-n, and the like. As the field boundaries are offset in each pass, the position of a given pattern feature is not offset. This is the same as the pattern being offset in the field for each pass. Simple provisions must be made in the pattern electronics for this to be done properly.

[0098] Stitching errors occur at the field boundaries for each individual write pass, but these errors are averaged out by the other passes due to the different field boundaries. In general, the more write passes are used, the better the averaging and the less stitching errors are noticeable. A similar procedure can be used for wafer mode where the stripes are offset. This offset is achieved by offsetting the deflection voltage or offsetting the undeflected beam position. This latter is achieved by deviating from the strictly linear configuration of the beam described above and by scattering the beam at a position no further than the full field.

The figure shows the case where the deflection of the beam is equal to or greater than one half of the source spacing between the emitters, so that there is a continuous area with a single row of emitters, Is one-half and one-third of the electron source spacing
It is preferable to set it as such. In that case, there are at least two, three, etc. rows to achieve a continuous range.
In such a case, there must be four, six, etc. columns to take advantage of the averaging.

Another optional method is to change the sensitivity of various optical elements by changing the beam energy as a function of position along the beam axis. The optical elements in the above-described system, including the cathode array, shaped aperture array, shaped deflector, precision position deflector, stigmator, and writing surface, are derived from planar structures oriented perpendicular to the beam axis. Be composed. Applying a constant electrostatic potential on a continuous element results in a uniform electric field that is oriented along the beam axis. The strength of the electrostatic field is given by the quotient of the potential difference divided by the spatial separation of adjacent optical elements along the beam axis. This change is used to change the kinetic energy of the beam along the optical path while maintaining imaging properties. Generally, the kinetic energy of each beam at a given point is given by the potential difference between this point and the cathode surface multiplied by the electronic charge.

It is advantageous to vary the kinetic energy along the flight path for several reasons. First, the emission characteristics of the cathode depend on the strength of the electric field at the emission surface.
Second, the sensitivity of the electrostatic deflector, ie, the angular deflection for a given deflection plate voltage, is inversely proportional to the beam kinetic energy in the deflector. Third, the sensitivity of the electrostatic stigmator is inversely proportional to the beam kinetic energy. Fourth, the intensity of uniform magnetic focusing for a given solenoid amp is inversely proportional to the beam kinetic energy. Fifth, the dose, measured in units of incident charge per unit area required to expose the resist, is inversely proportional to the beam kinetic energy at the writing surface. Sixth, susceptibility to unwanted electromagnetic interference fields decreases as the beam kinetic energy increases. For this reason, it is desirable to vary the beam energy as a function of position along the flight path. This is achieved by selecting the DC electrostatic potential of each planar element along the path (and adding additional elements as appropriate). The particular choice of potential for a given element is
It depends on the function desired to operate among the above six functions. Thus, the beam has variously higher or lower kinetic energies at different points along the optical path.

An alignment method that measures and corrects a small repeatable position error of the write beam uses a test grid that has the same periodicity as the write beam. This grid is permanently mounted on the stage flush with the wafer writing surface. Either use one lateral dimension of the overall deflection, or use stage motion of the orthogonal lateral dimension to scan some or all of the beam against the grid structure. During scanning, electronic signals are taken simultaneously and independently for each beam, thereby obtaining a measurement of the position of each beam with respect to the grid structure. The difference between the position of each beam and the desired position on the ideal linear array constitutes two lateral dimension position errors. This error is stored and returned to the precision position deflector for each beam, so that all beams fall independently on an ideal linear grid, and therefore position fidelity to the ideal intended configuration of the write pattern Is improved.

Other optional methods are suitable for correcting small, non-repeatable position errors of the write beam in real time. Prior to pattern formation, a pattern of fiducial marks is printed on the writing surface. During a patterning operation, a conventional detector detects electrons scattered from the mark and generates an error signal that quickly corrects for beam position variations.

Although the present invention has been described with reference to a single preferred embodiment, the present invention provides a method for micromachining a workpiece, defining a pattern in photoresist on an integrated circuit wafer, and the like. Those skilled in the art will appreciate that they can be implemented in various versions within the spirit and scope of the claims.

In summary, the following items are disclosed regarding the configuration of the present invention.

(1) Before the light source plane perpendicular to the z-axis
The z-axis extending to a workpiece plane perpendicular to the z-axis
Means for establishing a substantially uniform magnetic field parallel to said;
emitter position on the z-axis and y perpendicular to said z-axis
The light source flat at a light source position separated by a light source interval along the axis.
A small number of at least two electron emission light sources arranged in the plane;
A set of at least one row and parallel to the z-axis
At least along the beam plane along at least two beam axes.
At least one set of at least two electronic
Emitter array to generate the beam and in the beam shaping plane
At least 2 arranged along the z-axis at the molding position of
Forming at least one row of two beam shaping apertures
An array spaced along the y-axis between the light sources.
And a corresponding light source in the emitter array
A matching shaping array, the light source plane and the beam shaping
Generate a parallel electric field extending between the planes and parallel to the z-axis.
First electric field means for forming said parallel electric field and
The magnetic fields are related to each other and the emitter position and the
Having a size related to the molding position, whereby said one set
Parallel beams of the emission light source
A first electric field means for forming a set of images;
Of the light source plane and the beam shaping plane in a shaped deflector area
At least two deflector electrodes disposed therebetween
Is also a row of beam shaping deflector arrays, where the beam
A shaping aperture spaced the light source along the y-axis.
Corresponding light in the emitter array
A deflector of the beam-shaping deflector array aligned with a source
Electrodes bias individual electron beams of the set of electron beams.
Electrically connected to a set of beam shaping deflector driving means
To the corresponding beam shaping aperture
The deflection of the individual electron beams of the set of electron beams is
Beam shaping deflector for forming an array of shaped beams
An array, and the beam shaping plane along the z-axis;
Arranged between the workpiece planes parallel to said y-axis,
At least one row of the set of electron beams.
At least two electron beams on the y-axis and the z-axis
At least two planes grouped along the x-axis perpendicular to
A deflector array of at least one column of row deflector electrodes;
Electrically connected to the deflector array, with respect to the x-axis
And establishing at least one set of parallel deflection electric fields,
The at least two beams of the set of electron beams in a row of
Beam is deflected parallel within the deflection range along the y-axis.
Second electric field means for causing said set of parallel beams to
Forming a set of images of the emission light source on the workpiece plane
The deflection electric field and the magnetic field are related to each other
And the z-axis of the molding position and the workpiece plane
Having a size associated with the workpiece position above,
The image has a substantially uniform image spacing along the y-axis.
And traverses the workpiece plane, whereby the set of
The at least two electron beams of the electron beam are all
Proceeding in a parallel path, the parallel path is
Parallel to the z-axis between the beam shaping planes
The parallel path is in parallel with the beam shaping plane.
A second having a common angle to the z-axis between object planes
The work piece under the set of electron beams.
Stage means for holding and moving, and a set of sub-fields
The stage for writing parallel to the workpiece
System for controlling said set of electron beams in synchronism with means
Direct-writing electron beam system including a system control means. (2) the emitter array, the shaped array, and
The beam shaping deflector array is at least one of the elements
Having two rows, wherein said deflector array has at least three
The system, wherein the system thereby comprises
A row of defective modules in at least two rows
Selected can be exchanged for the corresponding module in two rows
The above, further comprising means for disabling the module
The system according to (1). (3) the uniform magnetic field and the deflection electric field are combined to form
The set of electron beams greater than one half of the light source spacing
Establishing a maximum deflection of the electron beam, thereby
Wherein the set of electron beams has a continuous deflection range.
The system according to (2). (4) the uniform magnetic field and the deflection electric field are combined to form
The set of e-beams less than one half of the electron source spacing
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
In (3) above, the row elements fill the gaps within said range.
The described system. (5) the emitter array, the shaped array, and
The beam shaping deflector arrays are all in the light source position
Having at least two rows of aligned elements, and
The director array has at least three elements, whereby
A corresponding module in a second one of the at least two rows
The corresponding module in the first of the at least two columns.
Repeat the pattern written by Joule
In this way, the matching error is averaged.
Stem. (6) the beam shaping array of electrodes and the deflection electric field
Are coupled to each other, and are larger than half of the light source interval.
Establish maximum deflection of said set of electron beams
Thereby causing the set of electron beams to have a continuous deflection range.
The system according to (5), having an enclosure. (7) the emitter array, the shaped array, and
All of the beam shaping deflector arrays have at least
Also has four columns, two of which are the other two
Arranged in the middle of the position along the y-axis of the elements of the row
And the deflector array has at least five
Element, whereby two of said at least four columns
A corresponding module of the at least four columns
Written by the corresponding module in the other two columns of
Repeated pattern, thereby averaging matching errors
The system according to (6) above. (8) the uniform magnetic field and the deflecting electric field are combined to form
The set of electron beams less than one half of the light source spacing
Establishing a maximum deflection of the electron beam, thereby
A set of electron beams is coupled to a first of the at least one row.
Discontinuous with a gap in the range between adjacent beams in a row
The emitter array, the shaped array,
B) and the beam shaping deflector array is
At least two columns, of which a second column is
midway along the y-axis between the positions of the electron beams in the first row
Having a positioned electron beam, and wherein said deflector array is
Having at least three elements, whereby said second row
The element described in (5) above fills the gap in the above range.
On-board system. (9) the beam shaping array of electrodes and the deflection electric field
Are coupled to each other, and are larger than half of the light source interval.
Establish maximum deflection of said set of electron beams
Thereby causing the set of electron beams to have a continuous deflection range.
The system according to claim 1, having an enclosure. (10) The emitter array, the shaped array, and
And all the beam shaping deflector arrays have fewer elements
Have four columns, two of which are on the y-axis
Along the middle of the positions of the other two rows of elements
At least five deflector arrays
Of the at least four rows,
Corresponding modules in one of the at least four
Written by the corresponding module in the other two columns of the column
Pattern, thereby averaging matching errors
The system according to the above (9). (11) at least two sets of said beam shaping arrays of electrodes
Of the first pair of electrodes, the first of which is the first pair of electrodes.
A first direction in the first plane along the z-axis in the plane
With a first pair of connecting members arranged along the direction
And a second pair of which is the z-axis in a second plane.
Along the second direction in the second plane
The first pair of connecting members,
Direction and the second direction are at right angles to each other,
A first direction forms an acute angle with the x-axis and the second direction
The direction forms the acute angle with respect to the y-axis, and
Shaped apertures spaced along the y-axis at the light source spacing
A corresponding light source arranged and in the emitter array
The at least two sets of two pairs of electrodes are
Separated by the molding separation distance associated with the acute angle,
The system according to (1). (12) the emitter array, the shaped array, and
And the beam shaping deflector array has at least
Also has two rows and at least three deflector arrays
The system, whereby the system
At least two rows of defective modules in one row
Can also be exchanged for the corresponding module in two rows selected
Further comprising means for disabling the used module.
The system according to (11). (13) The emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
As described in (11) above, the matching error is averaged.
System. (14) The uniform magnetic field and the deflection electric field combine to
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
(13) wherein the row elements fill gaps within said range.
System. (15) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The method according to (1), wherein the writing of the set of
A subfield covers the tip width on the workpiece
At least one of the at least two electron emission light sources
One row has several light sources related to the light source spacing.
And when the stage moves by one row interval, the one set
Subfield covers the tip length on the workpiece
As described above, at least two of the at least two electron emission light sources
Also relates to the column spacing where two columns separate adjacent columns.
The stage means and the stage
Stem control means steps through multiple chip patterns
. The above (1), in which writing is performed continuously in an and-scan manner
System. (16) the emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
As described in (15) above, the matching error is averaged.
System. (17) the beam shaping array of electrodes and the deflection electrodes;
Before the fields combine to be greater than one half of the light source spacing
Establishing a maximum deflection of said set of electron beams
Thereby causing the set of electron beams to have a continuous deflection range.
The system according to claim 16, having an enclosure. (18) The uniform magnetic field and the deflection electric field combine to
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
(16) wherein the elements of the row fill gaps within said range.
System. (19) The emitter array, the shaped array, and
And all the beam shaping deflector arrays have fewer elements
Have four columns, two of which are the other two columns.
Has an element placed in the middle of the position of the elements in one column, and
One said deflector array has at least five elements,
Corresponding to two of the at least four columns
The module comprises two other columns of said at least four columns
Pattern written by the corresponding module of
Iterating, thereby averaging the matching errors,
The system according to 7). (20) When the uniform magnetic field and the deflection electric field are combined,
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The system according to the above (18), having a wide deflection range. (21) At least two sets of the beam shaping array of electrodes
Of the first pair of electrodes, the first of which is the first pair of electrodes.
A first direction in the first plane along the z-axis in the plane
With a first pair of connecting members arranged along the direction
And a second pair of which is the z-axis in a second plane.
Along the second direction in the second plane
The first pair of connecting members,
Direction and the second direction are at right angles to each other,
A first direction forms an acute angle with the x-axis and the second direction
The direction forms the acute angle with respect to the y-axis, and
Shaped apertures spaced along the y-axis at the light source spacing
A corresponding light source arranged and in the emitter array
The at least two sets of two pairs of electrodes are
Separated by the molding separation distance associated with the acute angle,
The system according to (15). (22) the emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
The matching error is thereby averaged, as described in (21) above.
System. (23) The beam shaping array of electrodes and the deflection electric field
Combined, the one greater than one half of the light source spacing
Establishing a maximum deflection of said set of electron beams,
As a result, the set of electron beams provides a continuous deflection range.
The system according to the above (22), comprising: (24) The uniform magnetic field and the deflecting electric field combine to
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
(22) wherein the row elements fill gaps within said range.
System. (25) the emitter array, the shaped array, and
And all the beam shaping deflector arrays have fewer elements
Have four columns, two of which are the other two columns.
Has an element placed in the middle of the position of the elements in one column, and
One said deflector array has at least five elements,
Corresponding to two of the at least four columns
The module comprises two other columns of said at least four columns
Pattern written by the corresponding module of
Iterating, thereby averaging the matching errors,
The system according to 3). (26) The uniform magnetic field and the deflection electric field combine to form
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
(23) wherein the row elements fill gaps within said range.
System. (27) For an integrated circuit wafer including a plurality of integrated circuit chips
The system according to (1), wherein the pattern is written.
The wafer width along the y-axis and the front
A length of the wafer along the x-axis,
Field covers the wafer width on the integrated circuit wafer.
At least one of the at least two electron emission light sources
One row has several light sources related to the light source spacing.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system according to (1), which is written. (28) The emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
As described in (27) above, the matching error is averaged.
System. (29) the beam shaping array of electrodes and the deflection electrodes;
Before the fields combine to be greater than one half of the light source spacing
Establishing a maximum deflection of said set of electron beams
Thereby causing the set of electron beams to have a continuous deflection range.
The system according to claim 28, having an enclosure. (30) When the uniform magnetic field and the deflection electric field are combined,
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
(28) wherein the row elements fill gaps within said range.
System. (31) The emitter array, the shaped array, and
And all the beam shaping deflector arrays have fewer elements
Have four columns, two of which are the other two columns.
Has an element placed in the middle of the position of the elements in one column, and
One said deflector array has at least five elements,
Corresponding to two of the at least four columns
The module comprises two other columns of said at least four columns
Pattern written by the corresponding module of
Iterating, thereby averaging the matching errors,
The system according to 9). (32) at least two sets of said beam shaping arrays of electrodes
Of the first pair of electrodes, the first of which is the first pair of electrodes.
A first direction in the first plane along the z-axis in the plane
With a first pair of connecting members arranged along the direction
And a second pair of which is the z-axis in a second plane.
Along the second direction in the second plane
The first pair of connecting members,
Direction and the second direction are at right angles to each other,
A first direction forms an acute angle with the x-axis and the second direction
The direction forms the acute angle with respect to the y-axis, and
Shaped apertures spaced along the y-axis at the light source spacing
A corresponding light source arranged and in the emitter array
The at least two sets of two pairs of electrodes are
Separated by the molding separation distance associated with the acute angle,
The system according to (27). (33) The emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
According to the above (32), the matching error is thereby averaged.
System. (34) the beam shaping array of electrodes and the deflection electrodes;
Before the fields combine to be greater than one half of the light source spacing
Establishing a maximum deflection of said set of electron beams
Thereby causing the set of electron beams to have a continuous deflection range.
The system according to claim 33, having an enclosure. (35) The uniform magnetic field and the deflection electric field combine to form
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
(33) wherein the row elements fill gaps within said range.
System. (36) The emitter array, the shaped array, and
And all the beam shaping deflector arrays have fewer elements
Have four columns, two of which are on the y-axis
Along the middle of the positions of the other two rows of elements
At least five deflector arrays
Of the at least four rows,
Corresponding modules in one of the at least four
Written by the corresponding module in the other two columns of the column
Pattern, thereby averaging matching errors
The system according to (34), wherein: (37) The uniform magnetic field and the deflection electric field combine to form
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
Having an electron beam disposed in the array and the deflector array
Has at least three elements, whereby the second
(35) wherein the row elements fill gaps within said range.
System. (38) The electron emission light sources each have a light source lateral dimension.
Having said set of said emission light sources in said beam shaping plane
The images are each substantially equal to the lateral dimension of the light source
The beam shaping aperture having an image lateral dimension
Are each substantially larger than the lateral dimension of the light source.
Have lateral dimensions, which allows the system to be opened
The number characteristics are the electron lateral speed in the light source plane and the beam.
The ratio of the beam to the axial electron velocity at the beam forming plane.
For example, the numerical aperture is defined by a beam limiting aperture
The system according to (1), which is not performed. (39) A set of sub-figures extending along the x-axis on the workpiece
Method for writing parallel with a shaped beam electron beam
From the light source plane perpendicular to the z axis to the z axis.
Parallel to the z-axis, extending to the workpiece plane at right angles
Establishing a substantially uniform magnetic field, wherein
The light source plane and the workpiece plane are 20 along the z-axis.
separating the light source plane by less than a centimeter
And between the beam shaping plane and flat with respect to the z-axis.
Generating a parallel electric field, wherein said parallel electric field
The field and the magnetic field are related to each other and the emitter location
And a size associated with the molding position, whereby
The set of parallel beams is placed on the beam shaping plane.
Forming a set of images of the emission light source;
The position of the emitter on the z-axis in the plane of the light source;
And along the y-axis perpendicular to the x-axis by the light source spacing
At least two lights located at separate light source locations
Emitter array including at least one row of electron emission light sources
At least one set of at least two electron beams from A
Generating the light source position using the y-axis.
Along at least the chip width distance, and
At least one set of at least two electron beams in the z-axis
Along a set of at least two beam axes parallel to
To the workpiece plane, thereby at least
The set of subfields covering the chip width distance is simply
Writing on said workpiece in one pass;
Positioned along the z-axis at a molding position in the
At least two of the beam shaping apertures
The at least one set of small arrays is arranged in a row of the molded array.
Guide at least two electron beams,
A beam shaping aperture extending along the y-axis from the light source;
Spaced apart and in the emitter array
Matching with a corresponding light source, a beam shaping deflector
Located between the light source plane and the beam shaping plane in an area
Of at least two deflector modules
The operation of one row of beam shaping deflector arrays allows the
At least one set of at least two electron beams is provided.
Deflecting against a shaped array, the method comprising:
Beam shaping deflector area has a beam shaping deflector aperture
With a light source spacing along the y-axis.
Arranged and aligned with a corresponding light source in the emitter array.
Combining the beam shaping plane along the z-axis.
Between the plane and the work plane parallel to the y-axis
At least one of the at least two parallel deflector electrodes
The set of at least two deflectors in a two row deflector array.
Directing an electron beam, the first one of said at least one row
At least two electron beams of said set of electron beams
Along the x-axis perpendicular to the y-axis and the z-axis
And combining at least a few parallel to the x-axis.
Also generate one deflection electric field, whereby the first column
The at least two electrons of the set of electron beams in
Deflecting the beam parallel within the deflection range along said y-axis
And wherein the set of parallel beams emits
A set of images of a light source is formed on the workpiece plane.
Wherein said magnetic field is in front of said forming position and said workpiece plane.
A size associated with the position of the workpiece on the z-axis;
An image in which the set of images is substantially uniform along the y-axis
Traverse the work plane at a distance, thereby
The at least two electron beams of the set of electron beams are
All traveling in a parallel path, the parallel path being the light source
Parallel to the z-axis between the plane and the beam shaping plane
Wherein the parallel path is the beam shaping plane and the
Have a common angle to the z-axis between the workpiece planes
Step, supporting the workpiece by stage means;
And a step for moving along the x-axis in the plane of the workpiece.
And the set of subfields simultaneously on the workpiece
System synchronized with the stage means for writing to the stage
A step of controlling the set of electron beams by control means.
And methods that include: (40) The deflector electrode of the beam shaping deflector array
Converts the individual electron beams of the set of electron beams to the one
Deflection of a set of electron beams independently of other electron beams
Electrically connected to a set of beam shaping deflector driving means;
Stored to form an array of shaped beams
For the corresponding beam shaping aperture according to the data
Simultaneously deflect individual electron beams of said set of electron beams
The method according to (39), further including the step of causing
Law. (41) The uniform magnetic field and the deflection electric field combine to
The set of electronic beams being greater than one half of the light source spacing;
To establish a maximum deflection of the electron beam of the
The set of electron beams has a continuous deflection range and
The beam shaping plane in the area of the switching deflector and
At least two stitches arranged between crop planes
Stitching at least one row of scanning deflector electrodes
Stitching aperture further comprising a deflector array
Are spaced along the y-axis at the light source spacing;
And matched with a corresponding light source in the emitter array,
The stitching deflection of the beam shaping deflector array
Electrode is electrically connected to a set of stitching deflector driving means.
And the electron beam is close to the maximum deflection
In addition, beam deflection impinges on adjacent subfields.
Responsive to the stored correction data to adjust
Deflecting individual electron beams of the set of electron beams
The method according to (39), comprising a step. (42) The uniform magnetic field and the deflecting electric field combine to
The set of electronic beams being greater than one half of the light source spacing;
To establish a maximum deflection of the electron beam of the
The set of electron beams has a continuous deflection range and
The beam shaping plane in the area of the switching deflector and
At least two stitches arranged between crop planes
Stitching at least one row of scanning deflector electrodes
Stitching aperture further comprising a deflector array
Are spaced along the y-axis at the light source spacing;
And matched with a corresponding light source in the emitter array,
The stitching deflection of the beam shaping deflector array
Electrode is electrically connected to a set of stitching deflector driving means.
And the electron beam is close to the maximum deflection
In addition, beam deflection impinges on adjacent subfields.
Responsive to the stored correction data to adjust
Deflecting individual electron beams of the set of electron beams
The method according to (39), comprising a step. (43) The emitter array, the molded array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements,
The corresponding module in the first of the at least two columns
At least two of the patterns written by the
In the corresponding module in the second of the columns
And further steps to average the matching errors.
The method according to the above (39), which comprises: (44) The emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements,
At least the corresponding module in the first of the two columns
The pattern written in the at least two columns
Repeat in the corresponding module in the second column,
The above, further comprising the step of averaging the matching error more
The method according to (40). (45) the emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements,
At least the corresponding module in the first of the two columns
The pattern written in the at least two columns
Repeat in the corresponding module in the second column,
The above, further comprising the step of averaging the matching error more
The method according to (41). (46) the emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements,
At least the corresponding module in the first of the two columns
The pattern written in the at least two columns
Repeat in the corresponding module in the second column,
The above, further comprising the step of averaging the matching error more
The method according to (42). (47) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The method according to (39), wherein the writing is performed.
Subfield covers the tip width on the workpiece
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And when the stage moves by one row interval, the one set
Subfield covers the tip length on the workpiece
As described above, at least two of the at least two electron emission light sources
Also in the row spacing where two rows separate two adjacent rows
Having several rows associated therewith, said stage means being the first
And move the stage along the x-axis.
And scans the stage means in the second channel.
And move the stage along the x-axis
Scans one row at a time and moves the stage.
And write the pattern of multiple chips
By repeating the steps of scanning the stage,
Step-and-step the pattern of the plurality of chips.
A method comprising the step of continuously writing in a scanning manner. (48) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The method according to (40), wherein the writing is performed.
Subfield covers the tip width on the workpiece
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And when the stage moves by one row interval, the one set
Subfield covers the tip length on the workpiece
As described above, at least two of the at least two electron emission light sources
Also in the row spacing where two rows separate two adjacent rows
Having several rows associated therewith, said stage means being the first
And move the stage along the x-axis.
And scans the stage means in the second channel.
And move the stage along the x-axis
Scans one row at a time and moves the stage.
And write the pattern of multiple chips
By repeating the steps of scanning the stage,
Step-and-step the pattern of the plurality of chips.
A method comprising the step of continuously writing in a scanning manner. (49) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The method according to the above (41), wherein the one set is written.
Subfield covers the tip width on the workpiece
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And when the stage moves by one row interval, the one set
Subfield covers the tip length on the workpiece
As described above, at least two of the at least two electron emission light sources
Also in the row spacing where two rows separate two adjacent rows
Having several rows associated therewith, said stage means being the first
And move the stage along the x-axis.
And scans the stage means in the second channel.
And move the stage along the x-axis
Scans one row at a time and moves the stage.
And write the pattern of multiple chips
By repeating the steps of scanning the stage,
Step-and-step the pattern of the plurality of chips.
A method comprising the step of continuously writing in a scanning manner. (50) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
42. The method according to (42), wherein said one set is written.
Subfield covers the tip width on the workpiece
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And when the stage moves by one row interval, the one set
Subfield covers the tip length on the workpiece
As described above, at least two of the at least two electron emission light sources
Also in the row spacing where two rows separate two adjacent rows
Having several rows associated therewith, said stage means being the first
And move the stage along the x-axis.
And scans the stage means in the second channel.
And move the stage along the x-axis
Scans one row at a time and moves the stage.
And write the pattern of multiple chips
By repeating the steps of scanning the stage,
Step-and-step the pattern of the plurality of chips.
A method comprising the step of continuously writing in a scanning manner. (51) For an integrated circuit wafer including a plurality of integrated circuit chips
In the system according to the above (39), which writes the pattern of
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written. (52) For an integrated circuit wafer including a plurality of integrated circuit chips
In the system according to the above (40), which writes the pattern of
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written. (53) For an integrated circuit wafer including a plurality of integrated circuit chips
In the system according to (41), which writes the pattern
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written. (54) For an integrated circuit wafer including a plurality of integrated circuit chips
In the system according to the above (42), which writes the pattern of
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written. (55) A set of subfigures extending along the x-axis on the workpiece
Direct writing shaped beam electron writing parallel
In a beam system, the source plane perpendicular to the z-axis
Before extending from the plane to the workpiece plane perpendicular to the z-axis
Means for establishing a substantially uniform magnetic field parallel to the z-axis
Wherein the light source plane and the workpiece plane are z
Means for separating by less than 20 cm along the axis;
Emitter position on the z-axis and the z-axis and the x-axis
Light sources separated by light source intervals along the y-axis perpendicular to
At least two power sources located in the light source plane
A light source location comprising at least one row of sub-emitters;
Extends along the y-axis by at least a chip width distance,
A set of at least two beams parallel to the z-axis
At least guided along said axis towards said workpiece plane
Generating a set of at least two electron beams, thereby
The set of sub-flanges covering at least the chip width distance.
Field is written on the workpiece in a single pass
The mitter array and the molding position in the beam forming plane.
at least two beam shaping electrodes arranged along the z-axis;
A shaped array of at least one row of apertures,
The beam shaping aperture extends along the y-axis to the light source
And in the emitter array
A shaped array matching the corresponding light source of the light source and the light source plane
And the beam shaping plane, thereby extending the z-axis
Establishes an accelerating voltage distribution along
A first electric field means for generating a smooth accelerating electric field,
The parallel electric field and the magnetic field are related to each other and
And a size associated with the molding position and the molding position.
This causes the set of parallel beams to move into the beam shaping plane.
A first electric field forming a set of images of the emission light source
Means, the light source plane in the beam shaping deflector area and the
At least two deflections located between the beam shaping planes
Beam shaping deflector in at least one row of detector modules
An array spaced along the y-axis between the light sources.
And a corresponding light source in the emitter array
Having a matched beam shaping deflector aperture therein;
Each of the deflector modules comprises a set of beam shaping deflector drivers.
The one set of electron beams electrically connected to the driving means.
Each electron beam to another electron beam of the set of electron beams.
A deflector electrode that deflects independently of the system,
Said set of electrons for a corresponding beam shaping aperture
The deflection of the individual electron beams of the beam is
A beam shaping deflector array forming an array, and two pairs of
Each of said beam shaping deflectors including lithographically defined deflection electrodes
A module, said two pairs of lithographically defined deflections
A first pair of electrodes and a first lithographically defined connection member;
Are arranged along a first direction in a first electrode plane.
Wherein the first pair of connection members is lithographically defined
Between a first pair of counter electrodes and a first set of electrode voltage drive means
A second pair of said lithographically defined deflection electrodes
Along the z-axis in the plane of the second electrode,
Lithography arranged along a second direction in a polar plane
A lithographic arrangement disposed with a second set of defined connecting members;
A second set of luffy-defining connection members is said lithographically-defined
A second pair of deflection electrodes and a second set of electrode voltage driving means;
And the first direction and the second direction are connected to each other.
Each of said beam shaping deflector modules at right angles to
The beam shaping module further including at least three insulating layers.
Wherein the first insulating layer corresponds to the first electrode plane.
A second insulating layer disposed above and in front of the first electrode plane.
And a third insulating layer disposed between the second electrode planes.
Located below the second electrode plane, wherein all of said first and second
2, a third insulating layer, first and second pairs of the electrodes,
And the first and second pairs of connection members are beam-shaping biased.
Combined with each other in a complex
The set of beam-shaping apertures defined by the
The bead having one beam shaping aperture therein.
Beam shaping module and beam shaping along the z-axis
Between the plane and the workpiece plane parallel to the y-axis.
And at least one of the set of electron beams
At least one of said set of electron beams in a first one of two rows
A deflector that combines two electron beams along the x-axis.
A ray, electrically connected to the deflector array,
The at least two of the set of electron beams in a row
Deflects the electron beam in parallel within the deflection range along the y-axis
A set of at least one parallel to the x-axis
A second electric field means for establishing a deflection electric field, said second electric field means comprising:
The electric field and the magnetic field are related to each other and
And a workpiece position on the z-axis of the workpiece plane.
Having a size such that the set of parallel beams
Forming a set of images of the emission light source on the workpiece plane
And the set of images is substantially uniform along the y-axis.
Intersect with the work plane at a certain image interval,
The at least two beams of the set of electron beams
All the child beams travel in a parallel path, and the parallel path
Is in the z-axis between the light source plane and the beam shaping plane
The parallel path is parallel to the beam shaping
A common angle between the plane and the workpiece plane with respect to the z-axis
Second electric field means having a degree of
Support and move the workpiece in the workpiece plane below
Stage means and a set of subfields
In synchronization with the stage means to write in parallel on top
System control means for controlling the set of electron beams.
Including system. (56) At least three bias electrodes and contacts
DC biasing means connected to the first
Bias electrode position and disposed on the first insulating layer
Connected to the biasing means, and connected to the first
Match the corresponding value of the acceleration voltage distribution at the position of the ground electrode
First lithography biased by a first electrode bias voltage
A graphic defining bias electrode and a third electrode along the z-axis.
Bias electrode position and disposed below the third insulating layer
Connected to the bias means, and connected to the third
Match the corresponding value of the acceleration voltage distribution at the position of the ground electrode
Third lithography biased by a third electrode bias voltage
Further comprising a lithographically defined bias electrode;
The insulating layer is divided into a second upper insulating layer and a second lower insulating layer.
Wherein the second lithographically defined bias electrode is
A second bias electrode location along and the second upper part
The bias disposed between the insulating layer and the lower insulating layer;
Connected to the means and before the second bias electrode position
A second electrode bias corresponding to the corresponding value of the acceleration voltage distribution.
Biased with a bias voltage, the first and second
A luffy defining deflection electrode is connected to the biasing means,
And the acceleration voltage distribution on the first and second electrode planes
And second electrode biases corresponding to corresponding values of
Biased with a voltage, and all the first, second, and third
A lithographically defined bias electrode is provided for the beam shaping deflection.
Included in the composite structure and defined by lithography
The one beam of the set of beam shaping apertures
Described in (55) above, having a film forming aperture therein.
On-board system. (57) The deflecting module is configured to control the two pairs of lithographs.
In said first pair of defining deflection electrodes and in said first direction.
The first of the lithographically defined connection members disposed along
Connected to the biasing means on opposite sides of the pair of
At least two risogs located in the first electrode plane
A first set of luffy-defining shielding electrodes;
The second pair of fi-defining deflection electrodes and the second direction
The first of the lithographically defined connecting members arranged along
Connected to said biasing means on opposite sides of the two pairs and
At least two lithography elements arranged in the second electrode plane;
A second set of graphically defined shielding electrodes,
A first set of lithographically defined shielding electrodes is provided by the first lithography.
The biasing means being separated from the deflecting electrode
And is biased by the first electrode bias voltage.
Wherein the second set of lithographically defined shielding electrodes is
A bias electrode separated from the lithographically defined second electrode;
Connected to a second stage and biased by the second electrode bias voltage.
Applied to the lithographically defined deflection electrode
(56) the interference from the applied deflection signal is reduced.
System. (58) first and second lithographically defined deflection electrodes;
Two pairs of electrode electrodes are exposed to the beam shaping aperture.
A first, second, and third bias having a partial surface
Bias when electrodes are exposed to the beam shaping aperture
An electrode aperture surface, wherein the electrode aperture surface is
In the first and second xz aperture planes and in the first and second
And a beam shaping aperture in the second yz aperture plane
Collectively defining the tea surface, the first, second, and third
Each edge layer is exposed to said beam shaping aperture;
And the xz aperture plane and the front in the xy plane.
The recess is recessed from the yz aperture plane by the insulation recess distance.
The system according to (55), having an insulating aperture surface.
Stem. (59) When the insulation recess distance is less than about 100 microns.
The system according to (58). (60) First and second lithographically defined deflection electrodes;
Two pairs of electrode electrodes are exposed to the beam shaping aperture.
A first, second, and third bias having a partial surface
Bias when electrodes are exposed to the beam shaping aperture
An electrode aperture surface, wherein the electrode aperture surface is
In the first and second xz aperture planes and in the first and second
And a beam shaping aperture in the second yz aperture plane
Collectively defining the tea surface, the first, second, and third
Each edge layer is exposed to said beam shaping aperture;
And the xz aperture plane and the front in the xy plane.
The recess is recessed from the yz aperture plane by the insulation recess distance.
The system according to (56), having an insulating aperture surface.
Stem. (61) When the insulation recess distance is less than about 100 microns.
The system according to (60) above. (62) First and second lithographically defined deflection electrodes;
Two pairs of electrode electrodes are exposed to the beam shaping aperture.
A first, second, and third bias having a partial surface
Bias when electrodes are exposed to the beam shaping aperture
An electrode aperture surface, wherein the electrode aperture surface is
In the first and second xz aperture planes and in the first and second
And a beam shaping aperture in the second yz aperture plane
Collectively defining the tea surface, the first, second, and third
Each edge layer is exposed to said beam shaping aperture;
And the xz aperture plane and the front in the xy plane.
The recess is recessed from the yz aperture plane by the insulation recess distance.
The system according to (57), having an insulating aperture surface.
Stem. (63) The insulation recess distance is less than about 100 microns.
The system according to (62). (64) The uniform magnetic field and the deflecting electric field combine to form
The set of electronic beams being greater than one half of the light source spacing;
To establish a maximum deflection of the electron beam of the
Wherein the set of electron beams has a continuous deflection range.
The system according to (55). (65) The uniform magnetic field and the deflection electric field are combined to
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Located midway along the y-axis between the positions of the elements of the first row
And the deflector array has a reduced electron beam.
It has at least three elements, whereby the elements of said second row are
The element according to (55), wherein the element fills a gap in the range.
System. (66) the emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
According to the above (55), the matching error is averaged thereby.
System. (67) The beam shaping array of electrodes is at least two sets
Of the first pair of electrodes, the first of which is the first pair of electrodes.
A first direction in the first plane along the z-axis in the plane
With a first pair of connecting members arranged along the direction
And a second pair of which is the z-axis in a second plane.
Along the second direction in the second plane
The first pair of connecting members,
Direction and the second direction are at right angles to each other,
A first direction forms an acute angle with the x-axis and the second direction
The direction forms the acute angle with respect to the y-axis, and
Shaped apertures spaced along the y-axis at the light source spacing
A corresponding light source arranged and in the emitter array
The at least two sets of two pairs of electrodes are
Separated by the molding separation distance associated with the acute angle,
The system according to (55). (68) The uniform magnetic field and the deflection electric field combine to form
The set of electronic beams being greater than one half of the light source spacing;
To establish a maximum deflection of the electron beam of the
Wherein the set of electron beams has a continuous deflection range.
The system according to (56). (69) The uniform magnetic field and the deflection electric field combine to
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Intermediate the positions of the electron beams in the first row along the y-axis
And the deflector array has fewer elements.
It has at least three elements, whereby the elements of said second row are
(56). The element as described in (56) above, wherein the element fills a gap in the range.
System. (70) The emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
The average of the matching errors is thereby averaged. (56)
System. (71) At least two sets of the beam shaping array of electrodes
Of the first pair of electrodes, the first of which is the first pair of electrodes.
A first direction in the first plane along the z-axis in the plane
With a first pair of connecting members arranged along the direction
And a second pair of which is the z-axis in a second plane.
Along the second direction in the second plane
The first pair of connecting members,
Direction and the second direction are at right angles to each other,
A first direction forms an acute angle with the x-axis and the second direction
The direction forms the acute angle with respect to the y-axis, and
Shaped apertures spaced along the y-axis at the light source spacing
A corresponding light source arranged and in the emitter array
The at least two sets of two pairs of electrodes are
Separated by the molding separation distance associated with the acute angle,
The system according to (56). (72) When the uniform magnetic field and the deflection electric field are combined,
The set of electronic beams being greater than one half of the light source spacing;
To establish a maximum deflection of the electron beam of the
Wherein the set of electron beams has a continuous deflection range.
The system according to (57). (73) The uniform magnetic field and the deflection electric field are combined to
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Located midway along the y-axis between the positions of the elements of the first row
And the deflector array has at least
It has three elements, whereby the elements of the second row are
The system according to the above (57), which fills a gap within the range described above.
Tem. (74) The emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
As described in (57) above, the matching error is averaged.
System. (75) at least two sets of said beam shaping arrays of electrodes
Of the first pair of electrodes, the first of which is the first pair of electrodes.
A first direction in the first plane along the z-axis in the plane
With a first pair of connecting members arranged along the direction
And a second pair of which is the z-axis in a second plane.
Along the second direction in the second plane
The first pair of connecting members,
Direction and the second direction are at right angles to each other,
A first direction forms an acute angle with the x-axis and the second direction
The direction forms the acute angle with respect to the y-axis, and
Shaped apertures spaced along the y-axis at the light source spacing
A corresponding light source arranged and in the emitter array
The at least two sets of two pairs of electrodes are
Separated by the molding separation distance associated with the acute angle,
The system according to (57). (76) The uniform magnetic field and the deflection electric field combine to
The set of electronic beams being greater than one half of the light source spacing;
To establish a maximum deflection of the electron beam of the
Wherein the set of electron beams has a continuous deflection range.
The system according to (58). (77) The uniform magnetic field and the deflecting electric field combine to
The set of electronic beads smaller than one half of the light source interval.
To establish a maximum deflection of the electron beam of the
The set of electron beams is coupled to a first of the at least one row.
Discontinuity with gaps between adjacent beams in a row
The emitter array and the shaped electrode.
Ray and the beamforming deflector array are all elements
At least two columns of which the second column is
Located midway along the y-axis between the positions of the elements of the first row
And the deflector array has at least
It has three elements, whereby the elements of the second row are
The system according to the above (58), which fills a gap within the above range.
Tem. (78) the emitter array, the shaped array, and
And the beam shaping deflector arrays are all
Having at least two rows of elements aligned at
The deflector array has at least three elements, whereby
A corresponding module in a second one of the at least two rows.
Corresponding to a first column of said at least two columns
Repeat the pattern written by the module,
According to (58), the matching error is thereby averaged.
System. (79) The beam shaping array of electrodes is at least two sets
Of the first pair of electrodes, the first of which is the first pair of electrodes.
A first direction in the first plane along the z-axis in the plane
With a first pair of connecting members arranged along the direction
And a second pair of which is the z-axis in a second plane.
Along the second direction in the second plane
The first pair of connecting members,
Direction and the second direction are at right angles to each other,
A first direction forms an acute angle with the x-axis and the second direction
The direction forms the acute angle with respect to the y-axis, and
Shaped apertures spaced along the y-axis at the light source spacing
A corresponding light source arranged and in the emitter array
The at least two sets of two pairs of electrodes are
Separated by the molding separation distance associated with the acute angle,
The system according to (58). (80) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The system according to (55), wherein writing is performed.
A set of subfields determines the tip width on the workpiece
Less of the at least two electron emission light sources to cover
Several light sources, one of which is associated with the light source spacing
And when the stage moves by one row interval,
A set of subfields is the length of the tip on the workpiece
A small number of said at least two electron emission light sources to cover
At least two columns separate two adjacent columns between said columns
Having several rows associated with the septum, said stage means and
And the system control means includes a plurality of chip patterns.
Write continuously in a step-and-scan manner
Stem. (81) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The system according to (56), wherein writing is performed.
A set of subfields determines the tip width on the workpiece
Less of the at least two electron emission light sources to cover
Several light sources, one of which is associated with the light source spacing
And when the stage moves by one row interval,
A set of subfields is the length of the tip on the workpiece
A small number of said at least two electron emission light sources to cover
At least two columns separate two adjacent columns between said columns
Having several rows associated with the septum, said stage means and
And the system control means includes a plurality of chip patterns.
Write continuously in a step-and-scan manner
Stem. (82) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The system according to (57), wherein writing is performed.
A set of subfields determines the tip width on the workpiece
Less of the at least two electron emission light sources to cover
Several light sources, one of which is associated with the light source spacing
And when the stage moves by one row interval,
A set of subfields is the length of the tip on the workpiece
A small number of said at least two electron emission light sources to cover
At least two columns separate two adjacent columns between said columns
Having several rows associated with the septum, said stage means and
And the system control means includes a plurality of chip patterns.
Write continuously in a step-and-scan manner
Stem. (83) The chip width along the y-axis and the chip width along the x-axis
Patterns for integrated circuit chips with different chip lengths
The system according to (58), wherein writing is performed.
A set of subfields determines the tip width on the workpiece
Less of the at least two electron emission light sources to cover
Several light sources, one of which is associated with the light source spacing
And when the stage moves by one row interval,
A set of subfields is the length of the tip on the workpiece
A small number of said at least two electron emission light sources to cover
At least two columns separate two adjacent columns between said columns
Having several rows associated with the septum, said stage means and
And the system control means includes a plurality of chip patterns.
Write continuously in a step-and-scan manner
Stem. (84) For an integrated circuit wafer including a plurality of integrated circuit chips
The system according to (55), which writes the pattern of
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written. (85) For an integrated circuit wafer including a plurality of integrated circuit chips
The system according to (56), which writes the pattern of
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written. (86) For integrated circuit wafer including a plurality of integrated circuit chips
The system according to (57), which writes the pattern of
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written. (87) For integrated circuit wafers including a plurality of integrated circuit chips
The system according to (58), which writes the pattern of
Wherein the wafer has a wafer width along the y-axis and
A wafer length along the x-axis;
Field covers the wafer width on the integrated circuit wafer
At least two of said at least two electron emission light sources
One row contains several light sources related to the light source interval.
And the stage has a stage distance equal to the wafer length.
The entire wafer in a single pass
The system to be written.

[Brief description of the drawings]

FIG. 1 is a perspective view of a single module of the system.

FIG. 2 is a partial pictorial partial schematic view of the set of modules shown in FIG. 1;

FIG. 3 is a front view of the interconnection of deflection plates.

FIG. 4 is a detailed view of the formation of a deflection plate.

FIG. 5 is a detailed view of the formation of a deflection plate.

FIG. 6 is an overall view of one embodiment of the present invention.

FIG. 7 shows the path drawn by the beam on the wafer writing surface.

FIG. 8 shows the path drawn by the beam on the wafer writing surface.

FIG. 9 shows a path drawn by a beam on a wafer writing surface.

[Explanation of symbols]

 1 Substrate 4 Wafer 5 Electrode 6 Electrode 7 Electrode Array 8 Electrode Array 9 Electrode Array 12 Electron Emitter 20 Plate 21 Plate 22 Aperture 23 Aperture 24 Image 25 Image 31 Conductive Layer 32 Conductive Layer 33 Conductive Layer 34 Conductive Layer 35 Conductive Layer 40 Bias Controller 41 Power supply 42 Power supply 43 Power supply 44 Pattern storage device 45 Pattern system controller 46 Molding controller 47 Main deflection controller 48 Stage controller 51 Beam 52 Beam 53 Beam 54 Beam 61 Shielding electrode 62 Deflector electrode 62-1 Conductor 62-2 Conductor 63 Deflector electrode 63-1 Conductor 64 Deflector electrode 64-1 Conductor 65 Deflector electrode 65-1 Conductor 65-2 Conductor 66 Deflector 67 Deflector 68 Deflector 69 Deflector 70 Pole 71 electrode 72 electrode 73 electrode 100 module 100-1 module 100-2 module 100-3 module 100-4 module 101 beam axis 260 insulating layer 500 stage 550 solenoid 570 magnetic pole piece 580 trim coil 590 winding 600-1 first Column 600-2 first column 600-m first column 601-1 second column 601-2 second column 601-m second column 650-1 offset array 650-n offset array 651 -1 offset array 651-n offset array

────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Rodney A. Kendall United States 06877 Ridgefield, Connecticut Seymour Lane 24 (56) References JP-A-4-118916 (JP, A) JP-A-9-330870 ( JP, A) JP-A-8-264411 (JP, A) JP-A-8-171880 (JP, A) JP-A-7-153655 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/027 G03F 7/20 504 INSPEC (DIALOG) WPI (DIALOG)

Claims (8)

(57) [Claims] An electron source plane perpendicular to the z-axis;
Means for establishing a substantially uniform magnetic field parallel to the z-axis extending to a workpiece plane perpendicular to the axis; and an emitter position on the z-axis in the source plane and relative to the z-axis. A set of at least two beams parallel to the z-axis, comprising at least one row of at least two electron emitters located at electron source locations separated by an electron source spacing along a vertical y-axis An emitter array for generating at least one set of at least two electron beams directed along the axis toward the workpiece plane; and at least two emitters positioned along the z-axis at a shaping location in a beam shaping plane. A shaping array of at least one row of one beam shaping aperture, the shaping array being disposed at said source spacing along said y-axis and aligned with a corresponding electron source in said emitter array. A first electric field means for generating a parallel electric field extending between the electron source plane and the beam shaping plane and parallel to the z-axis, wherein the parallel electric field and the magnetic field are associated with each other; First electric field means having a magnitude associated with the emitter location and the shaping location, whereby the set of parallel beams forms a set of images of the electron source in the beam shaping plane; A beam shaping deflector array of at least one row of at least two deflector electrodes disposed in a beam shaping deflector region between an electron source plane and the beam shaping plane, wherein a beam shaping aperture is located in the y-axis. The deflector electrodes of the beam-shaping deflector array are spaced apart along the electron source and are aligned with corresponding electron sources in the emitter array. A beam shaping deflector drive means for deflecting the individual electron beams of the beam, thereby shaping the deflection of the individual electron beams of the set of electron beams relative to the corresponding beam shaping aperture. A beam-shaping deflector array for forming an array of beams formed between the beam-shaping plane and the workpiece plane along the z-axis and parallel to the y-axis; At least one of the at least two parallel deflector electrodes for combining at least two electron beams of the set of electron beams in the first column along an x-axis perpendicular to the y-axis and the z-axis. An array of deflectors, and at least one set of deflection electric fields electrically connected to the deflector array and parallel to the x-axis;
Second electric field means for deflecting the at least two electron beams of the set of electron beams in a row in parallel within a deflection range along the y-axis, wherein the set of parallel beams is the electron beam. The deflection electric field and the magnetic field are related to each other, and a magnitude relative to the shaping position and the workpiece position on the z-axis of the workpiece plane, so as to form a set of images of the source at the workpiece plane. The set of images traverses the workpiece plane at substantially uniform image spacing along the y-axis, such that the at least two electron beams of the set of electron beams are All traveling in parallel paths, wherein the parallel paths are parallel to the z-axis between the electron source plane and the beam shaping plane, and the parallel paths are the beam shaping plane and the workpiece plane. Between the z Second having a common angle with respect to
Field means for supporting and moving a workpiece under the set of electron beams; and synchronizing with the stage means for writing a set of sub-fields in parallel on the workpiece. A system control means for controlling a set of electron beams. 2. The emitter array, the shaped array,
And the beam shaping deflector array all has at least two rows of elements, the deflector array has at least three elements, and the system comprises:
The method of claim 1, further comprising: disabling a selected module such that a defective module in one of the two columns can be replaced with a corresponding module in another of the at least two columns. The described system. 3. The combination of the uniform magnetic field and the deflection electric field to establish a maximum deflection of the set of electron beams of the set of electron beams that is greater than one half of the source spacing. 3. The system of claim 2, wherein the set of electron beams has a continuous deflection range. 4. A combination of the uniform magnetic field and the deflection electric field to establish a maximum deflection of the set of electron beams of less than one-half of the source spacing, thereby establishing a maximum deflection of the electron beam. A set of electron beams having a discontinuous deflection range having a gap in a range between adjacent beams of a first row of the at least one row; the emitter array, the shaped array, and the beam The shaped deflector arrays all have at least two rows of elements, a second row of which has an electron beam disposed along the y-axis at an intermediate location of the first row of electron beams. 4. The system of claim 3, wherein the deflector array has at least three elements, whereby the elements in the second row fill gaps within the range. 5. The emitter array, the shaped array,
And the beam shaping deflector arrays all have at least two rows of elements aligned at the electron light source location;
And the deflector array has at least three elements;
The corresponding module of the second column of the at least two columns thereby repeats the pattern written by the corresponding module of the first column of the at least two columns, thereby averaging the alignment error. Item 2. The system according to Item 1. 6. The beam shaping array of electrodes and the deflection field combine to establish a maximum deflection of the electron beam of the set of electron beams that is greater than one half of the electron source spacing. The system of claim 1, wherein the set of electron beams has a continuous deflection range. 7. A method for writing a set of subfields extending along an x-axis on a workpiece in parallel with a shaped electron beam, comprising: a source plane perpendicular to the z-axis; Establishing a substantially uniform magnetic field parallel to the z-axis extending to the workpiece plane, wherein the source plane and the workpiece plane are 20 cm along the z-axis.
Generating a parallel electric field extending between the source plane and the beam shaping plane and parallel to the z-axis;
The parallel electric field and the magnetic field have magnitudes related to each other and to an emitter position and a shaping position, such that a set of parallel beams forms a set of images of the electron source at the beam shaping plane. At least an electron source located at an emitter position on the z-axis in the electron source plane and at an electron source position separated by an electron source interval along a y-axis perpendicular to the z-axis and the x-axis. An emitter comprising at least one column of two electron sources;
Generating at least one set of at least two electron beams from the array, wherein the electron source locations extend at least a chip width distance along the y-axis and the at least one set of at least two electrons. A beam is directed toward the workpiece plane along a set of at least two beam axes parallel to the z-axis, such that the set of subfields covering at least the tip width distance is a single pass Writing on the workpiece at; and forming the at least one beam into a forming array of at least one row of at least two beam forming apertures disposed along the z-axis at a forming position in the beam forming plane.
Directing a set of at least two electron beams, wherein the beam shaping apertures are spaced apart from the source along the y-axis and aligned with corresponding electron sources in the emitter array. And at least one set of beam shaping deflector arrays of at least one row of at least two deflector modules located in a beam shaping deflector area between the source plane and the beam shaping plane. Deflecting at least two of the electron beams with respect to the shaping array, wherein the beam shaping deflector region has a beam shaping deflector aperture therein and along the y-axis the electron source. Spaced and aligned with corresponding electron sources in the emitter array; and forming the beam along the z-axis. At least disposed parallel to the y axis between the surface and the workpiece plane 2
Directing said set of at least two electron beams into a deflector array of at least one row of one parallel deflector electrode;
Combining at least two electron beams of the set of electron beams in a first of the at least one column along an x-axis perpendicular to the y-axis and the z-axis; generating at least one deflection electric field parallel to the x-axis, thereby causing the at least two electron beams of the set of electron beams in the first row to lie within a deflection range along the y-axis; Deflecting parallel, wherein the magnetic field is applied to the shaping position and the z-axis of the workpiece plane such that the set of parallel beams forms a set of images of the electron source at the workpiece plane. A set of images traversing the workpiece plane at substantially uniform image spacing along the y-axis, the set of images having a size associated with the upper workpiece position, whereby the set of electron beams Said at least All two electron beams travel in a parallel path, the parallel path is parallel to the z-axis between the light source plane and the beam shaping plane, and the parallel path is the beam shaping The z between the plane and the workpiece plane
Having a common angle with respect to an axis; supporting the workpiece by stage means and moving along the x-axis in the workpiece plane; and placing the set of subfields on the workpiece. Controlling said set of electron beams by system control means synchronized with said stage means for simultaneously writing to said stage. 8. A distributed direct-write shaped-beam electron beam system for writing a set of subfields extending along the x-axis on a workpiece in parallel from an electron source plane perpendicular to the z-axis to the z-axis. Means for establishing a substantially uniform magnetic field parallel to said z-axis extending to a workpiece plane perpendicular to said workpiece, said electron source plane and said workpiece plane having a distance along said z-axis of less than 20 cm. At the emitter position on the z-axis in the electron source plane and at the electron source position separated by the electron source spacing along the y-axis perpendicular to the z-axis and the x-axis. A set of at least two beams parallel to the z-axis, comprising at least one row of at least two electron-emitting sources, wherein the light source locations extend along the y-axis at least a chip width distance. Generate at least one set of at least two electron beams directed toward the workpiece plane along the workpiece, such that the set of subfields covering at least the chip width distance has a single pass through the workpiece. An array of emitters to be written thereon; and a shaping array of at least one row of at least two beam shaping apertures disposed along the z-axis at a shaping location in a beam shaping plane, wherein the beam shaping apertures are a shaping array spaced along the y-axis and spaced from the source and aligned with a corresponding electron source in the emitter array; extending between the electron source plane and the beam shaping plane; A first electric field means for establishing an accelerating voltage distribution along a z-axis and generating an accelerating electric field parallel to said z-axis, said first electric field means comprising: The magnetic field having a magnitude relative to each other and relative to the emitter location and the shaping location whereby the set of parallel beams forms a set of images of the electron source at the beam shaping plane. A field shaping deflector array of at least one row of at least two deflector modules disposed in a beam shaping deflector area between the electron source plane and the beam shaping plane; a beam-shaping deflector aperture disposed therein at the electron source spacing along the y-axis and aligned with a corresponding electron source in the emitter array, wherein each of the deflector modules comprises a set of beam deflectors; Deflection electrically connected to the shaping deflector driving means for deflecting the individual electron beams of the set of electron beams independently of other electron beams of the set of electron beams A beam shaping deflector array having electrodes, whereby the deflection of individual electron beams of the set of electron beams relative to a corresponding beam shaping aperture forms an array of shaped beams; and two pairs of lithographically defined deflection electrodes. Each of the beam shaping deflector modules comprising a first pair of lithographically defined deflection electrodes and a first pair of lithographically defined connecting members along a first direction in a first electrode plane. A first pair of lithographically defined deflection electrodes connected between a first pair of lithographically defined deflection electrodes and a first set of electrode voltage drive means; Is disposed along the z-axis in a second electrode plane and with a second set of lithographically defined connection members disposed along a second direction in the second electrode plane; A second set of lithographically defined connecting members is connected between the second pair of lithographically defined deflection electrodes and a second set of electrode voltage drive means, wherein the first direction and the second direction are different from each other. A beam-shaping deflector module at right angles; and the beam-shaping module further comprising at least three insulating layers, wherein a first insulating layer is disposed on the first electrode plane, and wherein a second insulating layer is provided. A layer is disposed between the first electrode plane and the second electrode plane, a third insulating layer is disposed below the second electrode plane, and all the first,
Second and third insulating layers, first and second pairs of said electrodes,
And a first and a second pair of the connecting members are coupled together in a beam shaping deflector composite structure and have the one beam shaping aperture of the set of beam shaping apertures defined therein lithographically therein. The beam-shaping module, wherein the beam-shaping module is disposed between the beam-shaping plane and the workpiece plane along the z-axis and parallel to the y-axis, and wherein the at least one row of the set of electron beams is A deflector array for grouping at least two electron beams of the set of electron beams in a first column along the x-axis; electrically connected to the deflector array; A set of at least one deflection electrode parallel to the x-axis for deflecting the at least two electron beams of the set of electron beams in parallel within a deflection range along the y-axis; Second electric field means for establishing the deflection electric field and the magnetic field having a magnitude relative to each other and relative to the shaping position and a workpiece position on the z-axis of the workpiece plane. The set of parallel beams forms a set of images of the electron source at the workpiece plane,
A set of images intersects the workpiece plane at a substantially uniform image spacing along the y-axis, such that the at least two electron beams of the set of electron beams all travel in parallel paths. Traveling, wherein the parallel path is parallel to the z-axis between the electron source plane and the beam shaping plane, and the parallel path is the z-axis between the beam shaping plane and the workpiece plane. Second electric field means having a common angle with respect to: stage means for supporting and moving the workpiece in the workpiece plane under the set of electron beams; System control means for controlling said set of electron beams in synchronization with said stage means for writing in parallel on a workpiece.