JP2886584B2 - Recording medium and recording device - Google Patents
Recording medium and recording deviceInfo
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- JP2886584B2 JP2886584B2 JP1341816A JP34181689A JP2886584B2 JP 2886584 B2 JP2886584 B2 JP 2886584B2 JP 1341816 A JP1341816 A JP 1341816A JP 34181689 A JP34181689 A JP 34181689A JP 2886584 B2 JP2886584 B2 JP 2886584B2
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- recording
- recording medium
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Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、コンピューター、各種電子カメラ等の情報
記録再生装置用の記録装置に係り、特に高密度化、大記
憶容量化に好適であり、且つ広い温度範囲で使用可能で
ある書き換え可能な記録装置に関する。The present invention relates to a recording device for an information recording / reproducing device such as a computer and various electronic cameras, and is particularly suitable for high density and large storage capacity. Also, the present invention relates to a rewritable recording device that can be used in a wide temperature range.
(従来の技術) 従来の大容量記憶装置用の記録方法には磁性材料が使
われることが多い。この方法に関しては、例えば、オー
ム社、「磁性材料セラミックス」、桜井、金丸編、P143
(昭和61年)に記載されている。(Prior Art) Magnetic materials are often used in conventional recording methods for mass storage devices. Regarding this method, for example, Ohmsha, “Magnetic Material Ceramics”, Sakurai, Kanamaru, P143
(1986).
又、酸化物を上記記録媒体として用いた例としては、
酸化物超伝導体を用いて、超伝導臨界温度より低い温度
で記録再生することが特開昭63−268087号公報に開示さ
れている。Examples of using the oxide as the recording medium include:
JP-A-63-268087 discloses that recording and reproduction are performed at a temperature lower than the superconducting critical temperature using an oxide superconductor.
(発明が解決しようとしている問題点) 上記従来技術において磁性材料を使用する場合は、磁
性材料の磁化状態を利用する為、例えば、高密度化にお
いては磁区の微小化と検出する信号強度の関係から1μ
m程度のビット周期が限界と考えられていた。(Problems to be Solved by the Invention) In the case where a magnetic material is used in the above-mentioned conventional technology, the magnetization state of the magnetic material is used. From 1μ
A bit period of about m has been considered the limit.
又、超伝導酸化物を利用した記録方法においては、超
伝導状態を示す温度まで媒体を冷却し、この状態で酸素
イオンと水素イオンを針状イオン照射源より照射して超
伝導状態と常伝導状態の2状態を2進法の2値信号に対
応させている。この方式では記憶容量は大きくすること
が出来るが、現在知られている超伝導体の臨界温度は約
130Kより低いものばかりである。In a recording method using a superconducting oxide, the medium is cooled to a temperature at which the superconducting state is exhibited, and in this state, oxygen ions and hydrogen ions are irradiated from a needle ion irradiation source to obtain a superconducting state and a normal conducting state. The two states of the state correspond to the binary signal of the binary system. Although the storage capacity can be increased by this method, the critical temperature of currently known superconductors is about
Only lower than 130K.
従って、実際に記録する為には約130Kより低い温度に
冷却しなければならない。この為、液体窒素や液体ヘリ
ウム等の冷却用媒体を使用するか、或いはヘリウム冷凍
機等特殊な冷却装置を使用しなければならないという大
きな問題があった。Therefore, in order to actually record, it must be cooled to a temperature lower than about 130K. For this reason, there has been a great problem in that a cooling medium such as liquid nitrogen or liquid helium must be used, or a special cooling device such as a helium refrigerator has to be used.
更に超伝導状態と常伝導状態の2状態を利用して記録
する為には、この方法は多値記録が出来ないという問題
があり、又、酸素イオンと水素イオンを利用して記録す
ることから映像等の光入力信号は直接記録出来ないとい
う欠点もある。Further, in order to record using two states, a superconducting state and a normal conducting state, this method has a problem that multi-value recording cannot be performed. In addition, since recording is performed using oxygen ions and hydrogen ions, There is a disadvantage that optical input signals such as video cannot be directly recorded.
従って本発明の目的は、記憶容量を磁性材料を使用し
た時よりも大きくし、且つ液体窒素、液体ヘリウム、ヘ
リウム冷凍機等の特殊な冷却媒体や冷却装置を使用しな
くても記録出来、電気信号及び光信号のいずれにも対応
出来、簡単に信号の書き換えが可能な記録装置を提供す
ることにある。Therefore, an object of the present invention is to make the storage capacity larger than when a magnetic material is used, and to perform recording without using a special cooling medium or cooling device such as liquid nitrogen, liquid helium, or a helium refrigerator, and It is an object of the present invention to provide a recording apparatus which can cope with both signals and optical signals and which can easily rewrite signals.
(問題点を解決する為の手段) 上記目的は以下の本発明によって達成される。(Means for Solving the Problems) The above object is achieved by the present invention described below.
即ち、本発明は、入力電界又は入力光線の強度に応答
して、含有酸素量及び結晶構造が変化し、該変化によっ
て電気抵抗率、光学透過率、又は光学反射率に変化を生
じる酸化物の層を有する記録媒体、 入力電界の強度に応答して含有酸素量及び結晶構造が
変化する酸化物の層を有する記録媒体、及び該記録媒体
に対して電界を印加し、これによって該記録媒体の電界
が印加された部位の電気抵抗率、光学透過率、又は光学
反射率に変化を生じさせる記録手段を有する記録装置、
及び 入力光の強度に応答して含有酸素量及び結晶構造が変
化する酸化物の層を有する記録媒体、及び該記録媒体に
対して光線を露光し、これによって該記録媒体の光線が
露光された部位の電気抵抗率、光学透過率、又は光学反
射率に変化を生じさせる記録手段を有する記録装置であ
る。That is, the present invention relates to an oxide of an oxide in which the content of oxygen and the crystal structure change in response to the intensity of an input electric field or an input light beam, and the change causes a change in electrical resistivity, optical transmittance, or optical reflectance. A recording medium having a layer, a recording medium having an oxide layer whose oxygen content and crystal structure change in response to the intensity of an input electric field, and an electric field applied to the recording medium, whereby an electric field is applied to the recording medium. A recording apparatus having a recording unit that causes a change in electrical resistivity, optical transmittance, or optical reflectance of a portion where an electric field is applied,
And a recording medium having an oxide layer in which the oxygen content and the crystal structure change in response to the intensity of the input light, and exposing the recording medium to light, thereby exposing the light of the recording medium. This is a recording apparatus having recording means for causing a change in electrical resistivity, optical transmittance, or optical reflectance of a part.
(作用) 酸化物に含まれる酸素量を制御するとともに、酸化物
の結晶構造を変化させ、酸化物中の酸素含有量の大小と
酸化物の結晶構造の変化を利用し、この状態変化を信号
に対応させる。(Operation) The amount of oxygen contained in the oxide is controlled, and the crystal structure of the oxide is changed. The change in the crystal structure of the oxide and the change in the crystal structure of the oxide are used as a signal. To correspond to.
例えば、YBa2Cu3O7-x(0≦x≦1)材料では、x値
が0.5より大きい場合には、結晶構造はtetragonal構造
であり、x値が0.5より小さい場合は結晶構造はorthorh
ombic構造である。この酸素量変化による室温付近での
電気抵抗率はtetragonal構造の方が大きくなる。For example, in a YBa 2 Cu 3 O 7-x (0 ≦ x ≦ 1) material, when the x value is larger than 0.5, the crystal structure is a tetragonal structure, and when the x value is smaller than 0.5, the crystal structure is orthorh.
It is an ombic structure. The electrical resistivity near room temperature due to this change in oxygen amount is larger in the tetragonal structure.
そして同じtetragonal構造でも酸素量を少なくすると
電気抵抗率が更に大きくなる。更に光学特性、例えば、
反射率も酸素量が少ない、つまりx値が大きい方が反射
率が小さくなる。そして吸収率も反射率と同様に酸素量
により変化する。この様な物性変化はx値が小さいorth
orhombic構造でも同様に生じ、又、酸素量の変化は酸化
物がどの様な温度においても電解や電流を加えることや
光を照射することにより制御出来、且つ酸化物中の酸素
量は電界、電流、光という入力信号の強さにより連続的
に変化させることが出来る。And even in the same tetragonal structure, when the oxygen amount is reduced, the electric resistivity further increases. Further optical properties, for example,
As for the reflectance, the smaller the oxygen amount, that is, the larger the x value, the smaller the reflectance. The absorptance also changes depending on the amount of oxygen, like the reflectance. Such a change in physical properties is a small x value orth
The same occurs in the orhombic structure, and the change in the amount of oxygen can be controlled by applying electrolysis, applying current or irradiating light at any temperature of the oxide, and the amount of oxygen in the oxide can be controlled by the electric field and current. , Can be changed continuously by the intensity of an input signal called light.
本発明は、上記の様な酸化物中の酸素量の変化により
生じる電気抵抗率、吸収率、反射率等の電気的及び/又
は光学的な物理量の変化を利用して各種情報を記録する
ものである。The present invention records various types of information by utilizing changes in electrical and / or optical physical quantities such as electrical resistivity, absorptance, and reflectance caused by changes in the amount of oxygen in an oxide as described above. It is.
(実施例) 以下本発明の詳細を実施例により説明する。(Examples) Hereinafter, details of the present invention will be described with reference to examples.
実施例1 第1図は本発明の記録方法を示す概略図である。Embodiment 1 FIG. 1 is a schematic view showing a recording method of the present invention.
1は書き込み・読み出しをする為の針状電極、2は酸
化物であり、具体的にはYBa2Cu3O7-x、3は電極であ
り、本発明では金(Au)を使用した。又、4は基体であ
る。この為2、3及び4の部分が記録媒体を形成する。1 is a needle-like electrode for writing / reading, 2 is an oxide, specifically, YBa 2 Cu 3 O 7-x , 3 is an electrode. In the present invention, gold (Au) was used. Reference numeral 4 denotes a substrate. Therefore, portions 2, 3 and 4 form a recording medium.
記録媒体の作製方法は以下の様である。先ず、基体で
あるガラス(例えば、コーニング7059)にクロム(Cr)
と金を夫々10nm及び300nmの厚さに真空蒸着法により蒸
着して電極とする。次にクラスターイオンビーム蒸着法
によりYBa2Cu3O7-xを100nmの厚さに形成する。The method for producing the recording medium is as follows. First, chromium (Cr) is added to the glass (for example, Corning 7059) as the base.
And gold are deposited to a thickness of 10 nm and 300 nm, respectively, by a vacuum deposition method to form electrodes. Next, YBa 2 Cu 3 O 7-x is formed to a thickness of 100 nm by cluster ion beam evaporation.
以上の様に作成した記録媒体に室温及び大気中で針状
電極1と電極3との間に2Vの電界を印加した。電界を印
加した部分は酸素含有量が少なくなり電気抵抗が大きく
なった。実際に電圧を印加はしない部分に1Vのバイアス
電圧を印加すると10-6Aの電流が流れるが、電界を印加
した部分では10-10A以下の電流しか流れない。このこ
とにより2Vの電界により信号が記録され、1Vのバイアス
電圧により信号が読み出せることが確認された。An electric field of 2 V was applied between the needle electrode 1 and the electrode 3 at room temperature and in the air on the recording medium prepared as described above. In the portion where the electric field was applied, the oxygen content was reduced and the electric resistance was increased. When a bias voltage of 1 V is applied to a portion where no voltage is actually applied, a current of 10 −6 A flows, but a current of 10 −10 A or less flows in a portion where an electric field is applied. As a result, it was confirmed that the signal was recorded by the electric field of 2V and the signal could be read by the bias voltage of 1V.
記録した信号を消去する為には記録部を酸素雰囲気中
で100℃程度に加熱すればよい。全ての信号を消去する
為には記録媒体全体を加熱すればよいし、部分的な消去
の場合には半導体レーザーの照射や針状電極1と酸化物
2とを接触させずに放電しない程度の電圧を加えてもよ
い。To erase the recorded signal, the recording section may be heated to about 100 ° C. in an oxygen atmosphere. In order to erase all the signals, the entire recording medium may be heated. In the case of partial erasure, the discharge is performed to such an extent that no discharge occurs without irradiating a semiconductor laser or bringing the needle electrode 1 into contact with the oxide 2. Voltage may be applied.
実施例2 基体にシリコン(Si)、酸化物に厚さ200nmのYBa2CU3
O7-xを用いた以外は実施例1と同様に記録媒体を作成し
た。Example 2 Silicon (Si) was used for the substrate, and YBa 2 CU 3 having a thickness of 200 nm was used for the oxide.
A recording medium was prepared in the same manner as in Example 1 except that O 7-x was used.
この記録媒体で電極1と3との間に2.5Vのパルス電界
(パルス幅5n秒)を印加して記録した。このとき印加す
るパルスの数により電極1と3との間に流れる電流値は
第2図の様に変化した。この様に印加するパルス数て電
極間の電流には1:1の対応があり多重記録が出来た。A 2.5 V pulse electric field (pulse width 5 ns) was applied between the electrodes 1 and 3 on this recording medium, and recording was performed. At this time, the value of the current flowing between the electrodes 1 and 3 changed as shown in FIG. 2 depending on the number of applied pulses. In this way, there was a 1: 1 correspondence between the number of applied pulses and the current between the electrodes, and multiplex recording was possible.
実施例3 記録媒体として実施例2と同様のものを用いた。第3
図示の様にレンズにより各種画像を記録媒体上に結像さ
せた。この時の露光時間は1/60秒である。その後、実施
例1に示したと同様の針状電極を記録媒体上で走査させ
ることにより、記録媒体上に結像させたものと同じ様な
画像を再生することが出来た。これは記録媒体に照射し
た光の光量に比例して媒体中の酸素量が変化したことを
意味している。Example 3 The same recording medium as in Example 2 was used. Third
Various images were formed on a recording medium by a lens as shown. The exposure time at this time is 1/60 second. Thereafter, by scanning the same needle-shaped electrode as in Example 1 on the recording medium, an image similar to that formed on the recording medium could be reproduced. This means that the amount of oxygen in the medium has changed in proportion to the amount of light applied to the recording medium.
尚、針状電極は不図示のX、Y、Z方向に移動可能な
走査機構に取り付けられており、Z方向には10-3nm、X
及びY方向には0.02nmの分解能で位置決めが出来る。Note that the needle-like electrodes (not shown) X, Y, mounted on a movable scanning mechanism in the Z direction, 10 -3 nm in the Z direction, X
Positioning can be performed with a resolution of 0.02 nm in the Y direction.
実施例4 第4図の本実施例の記録装置の構成図を示す。7は酸
化物絶縁体であり、記録層の酸化物2から酸素が外部に
脱離したり、外部から酸素が入り込むことを防止する機
能を有している。基体4は石英ガラスであり、酸化物2
は実施例2と同様である。酸化物絶縁体7はRFマグネト
ロンスパッタ法で作成した酸化硅素(SiO2)であり、そ
の厚さは30nmである。Embodiment 4 FIG. 4 shows a configuration diagram of a recording apparatus of the present embodiment in FIG. Reference numeral 7 denotes an oxide insulator, which has a function of preventing oxygen from being desorbed from the oxide 2 of the recording layer to the outside and entry of oxygen from the outside. The base 4 is made of quartz glass, and the oxide 2
Is the same as in the second embodiment. The oxide insulator 7 is silicon oxide (SiO 2 ) formed by RF magnetron sputtering, and has a thickness of 30 nm.
この様な構成の記録媒体を用いて針状電極1でトンネ
ル電流により電極1と3との間に電界を印加したとこ
ろ、電界を印加した部分は電気抵抗が低くなり、電界を
印加しない部分は電気抵抗が高く、電界の印加により高
抵抗及び低抵抗の状態を利用して電界という入力信号を
記録することが出来た。When an electric field is applied between the electrodes 1 and 3 by the tunnel current at the needle-shaped electrode 1 using the recording medium having such a configuration, a portion where the electric field is applied has a low electric resistance, and a portion where the electric field is not applied is a portion where the electric field is not applied. The electrical resistance was high, and the input signal of the electric field could be recorded by using the high and low resistance states by applying the electric field.
(発明の効果) 本発明によれば、記録密度は従来の磁性材料を用いた
場合に比べて3乃至4桁向上させることが可能であり、
且つ超伝導−常伝導転移を利用する記録方法の様に、記
録媒体を低温に冷却する必要もない為、室温でも使用可
能である。更に酸素量は入力信号の強度により連続的に
変化させることが出来る為多値記録も可能である。(Effects of the Invention) According to the present invention, the recording density can be improved by three to four orders as compared with the case where a conventional magnetic material is used.
In addition, unlike the recording method using the superconducting-normal conducting transition, it is not necessary to cool the recording medium to a low temperature, so that it can be used at room temperature. Further, since the oxygen amount can be continuously changed depending on the intensity of the input signal, multi-value recording is also possible.
又、実施例では記録媒体を真空蒸着法、クラッスター
イオンビーム蒸着法で作成したが、これらに限定される
ものではなく、スパッタ法、CVD法、塗布法等の各種薄
膜作成法が適用出来る。Further, in the embodiments, the recording medium is prepared by a vacuum deposition method or a cluster ion beam deposition method. However, the present invention is not limited thereto, and various thin film preparation methods such as a sputtering method, a CVD method, and a coating method can be applied.
更に酸化物はY−Ba−Cu−0で構成されるものだけで
はなく、In−Sn−0、Bi−Sr−Ca−0、T1−Sr−Ca−Cu
−0、Ti−0等で構成される酸化物等、殆どの酸化物が
使用可能であることは言うまでもない。Further, the oxide is not only composed of Y-Ba-Cu-0, but also composed of In-Sn-0, Bi-Sr-Ca-0, T1-Sr-Ca-Cu.
It goes without saying that most oxides such as oxides composed of −0, Ti-0, etc. can be used.
更に記録媒体を構成する電極は実施例では第1図示の
様に1と3との部分に使用したが、電極3を省略して1
と2との間で電気特性変化を利用することも可能であ
る。Further, in the embodiment, the electrodes constituting the recording medium are used in the portions 1 and 3 as shown in FIG.
It is also possible to utilize the change in the electrical characteristics between (2) and (2).
第1図は本発明において電気的に記録する場合の概念
図、第2図は記録を行う入力パルス数と電流値の関係
図、第3図は光で記録する場合の概略図、第4図はトン
エル電流を用いて記録する場合の概略図である。 1:針状電極2:酸化物 3:電極4:酸化物 5:レンズ系6:画像信号 7:絶縁体FIG. 1 is a conceptual diagram in the case of electrical recording in the present invention, FIG. 2 is a diagram showing the relationship between the number of input pulses to be recorded and the current value, FIG. 3 is a schematic diagram in the case of recording by light, FIG. FIG. 3 is a schematic diagram when recording is performed using a Tonell current. 1: Needle electrode 2: Oxide 3: Electrode 4: Oxide 5: Lens system 6: Image signal 7: Insulator
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI G11B 11/08 G11B 11/08 (72)発明者 川崎 岳彦 東京都大田区下丸子3丁目30番2号 キ ヤノン株式会社内 (72)発明者 山本 敬介 東京都大田区下丸子3丁目30番2号 キ ヤノン株式会社内 (56)参考文献 特開 昭54−133134(JP,A) 特開 昭62−219344(JP,A) 特開 昭63−268087(JP,A) 特開 昭64−57438(JP,A) (58)調査した分野(Int.Cl.6,DB名) G11B 9/00 G11B 9/04 G11B 7/24 ────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 6 Identification code FI G11B 11/08 G11B 11/08 (72) Inventor Takehiko Kawasaki 3- 30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. ( 72) Inventor Keisuke Yamamoto 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-54-133134 (JP, A) JP-A-62-219344 (JP, A) JP-A-62-268087 (JP, A) JP-A-64-57438 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) G11B 9/00 G11B 9/04 G11B 7/24
Claims (9)
含有酸素量及び結晶構造が変化し、該変化によって電気
抵抗率、光学透過率、又は光学反射率に変化を生じる酸
化物の層を有する記録媒体。1. In response to an input electric field or input light intensity,
A recording medium having an oxide layer in which the oxygen content and the crystal structure are changed, and the change causes a change in electrical resistivity, optical transmittance, or optical reflectance.
請求項1に記載の記録媒体。2. The recording medium according to claim 1, wherein the change in the oxygen content is a decrease.
結晶構造が変化する酸化物の層を有する記録媒体、及び
該記録媒体に対して電界を印加し、これによって該記録
媒体の電界が印加された部位の電気抵抗率、光学透過
率、又は光学反射率に変化を生じさせる記録手段を有す
る記録装置。3. A recording medium having an oxide layer whose oxygen content and crystal structure change in response to the intensity of an input electric field, and an electric field is applied to the recording medium, whereby an electric field of the recording medium is applied. A recording apparatus having recording means for causing a change in electrical resistivity, optical transmittance, or optical reflectance of a portion to which is applied.
してなる一方電極及び該一方電極の上に配置してなる前
記酸化物の層を有し、前記記録手段は、前記酸化物の層
の上に配置可能な他方電極を有している請求項3に記載
の記録装置。4. The recording medium has a substrate, one electrode disposed on the substrate, and the oxide layer disposed on the one electrode. 4. The recording apparatus according to claim 3, further comprising another electrode that can be arranged on the layer of the object.
求項4に記載の記録装置。5. The recording apparatus according to claim 4, wherein said other electrode has a needle-like electrode.
記録媒体に記録された記録内容を消去する消去手段を有
している請求項3に記載の記録装置。6. The recording apparatus according to claim 3, further comprising an erasing means for erasing recorded contents recorded on a recording medium by using said recording means.
晶構造が変化する酸化物の層を有する記録媒体、及び該
記録媒体に対して光線を露光し、これによって該記録媒
体の光線が露光された部位の電気抵抗率、光学透過率、
又は光学反射率に変化を生じさせる記録手段を有する記
録装置。7. A recording medium having an oxide layer whose oxygen content and crystal structure change in response to the intensity of input light, and a light beam is exposed to the recording medium, whereby the light beam of the recording medium is exposed. Is the electrical resistivity, optical transmittance,
Alternatively, a recording apparatus having recording means for causing a change in optical reflectance.
光する結像光学系を有している請求項7に記載の記録装
置。8. A recording apparatus according to claim 7, wherein said recording means has an image forming optical system for exposing the recording medium to light rays.
記録媒体に記録された記録内容を消去する消去手段を有
している請求項7に記載の記録装置。9. The recording apparatus according to claim 7, further comprising an erasing means for erasing recorded contents recorded on a recording medium by using said recording means.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1341816A JP2886584B2 (en) | 1989-12-29 | 1989-12-29 | Recording medium and recording device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1341816A JP2886584B2 (en) | 1989-12-29 | 1989-12-29 | Recording medium and recording device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03263632A JPH03263632A (en) | 1991-11-25 |
JP2886584B2 true JP2886584B2 (en) | 1999-04-26 |
Family
ID=18348981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1341816A Expired - Fee Related JP2886584B2 (en) | 1989-12-29 | 1989-12-29 | Recording medium and recording device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2886584B2 (en) |
-
1989
- 1989-12-29 JP JP1341816A patent/JP2886584B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03263632A (en) | 1991-11-25 |
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