JP2815225B2 - Semiconductor device and sealing method therefor - Google Patents
Semiconductor device and sealing method thereforInfo
- Publication number
- JP2815225B2 JP2815225B2 JP23960890A JP23960890A JP2815225B2 JP 2815225 B2 JP2815225 B2 JP 2815225B2 JP 23960890 A JP23960890 A JP 23960890A JP 23960890 A JP23960890 A JP 23960890A JP 2815225 B2 JP2815225 B2 JP 2815225B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- opening
- flow
- substrate
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔概要〕 素子形成されたICチップをCOB(Chip On Board)基板
状に搭載した半導体装置およびその封止方法に関し, COB基板を用いた半導体装置において,コストに全く
影響を与えることなく封止樹脂の流れ出しを抑制する構
造および方法の提供を目的とし, 1)基板上に半導体チップが搭載され,該基板上におい
て該チップの周囲に表面保護膜が被着され,該表面保護
膜に流れ抑制用開口を有し,該チップを覆って該流れ抑
制用開口まで封止樹脂が被覆されているように構成す
る。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a semiconductor device in which an IC chip on which elements are formed is mounted on a COB (Chip On Board) substrate and a sealing method therefor. (1) A semiconductor chip is mounted on a substrate, and a surface protective film is applied to the periphery of the chip on the substrate to provide a structure and method for suppressing the flow of the sealing resin. The surface protection film has a flow suppressing opening, and is configured so as to cover the chip and to cover the sealing resin up to the flow suppressing opening.
2)基板上に表面保護膜を被着し,該表面保護膜にチッ
プ搭載用開口と,該チップ搭載用開口の周囲に流れ抑制
用開口を形成する工程と,該基板上の該チップ搭載用開
口内に半導体チップを搭載する工程と,該チップを覆っ
て該流れ抑制用開口までを封止樹脂で被覆する工程とを
有するように構成する。2) forming a surface protection film on the substrate, forming a chip mounting opening in the surface protection film, and a flow suppressing opening around the chip mounting opening; It is configured to include a step of mounting a semiconductor chip in the opening, and a step of covering the chip and covering up to the flow suppressing opening with a sealing resin.
3)前記流れ抑制用開口が前記チップの周囲に設けられ
た帯状開口であるように構成する。3) The flow suppressing opening is configured to be a band-shaped opening provided around the chip.
4)前記流れ抑制用開口が前記チップの周囲に設けられ
た穴状開口の配列であるように構成する。4) The flow suppressing openings are arranged in an array of hole-shaped openings provided around the chip.
本発明は素子形成されたICチップをCOB基板上に搭載
した半導体装置およびその封止方法に関する。The present invention relates to a semiconductor device in which an IC chip having elements formed thereon is mounted on a COB substrate, and a method for sealing the same.
近年のパーソナルコンピュータや測定装置等の小型化
に伴い,ICカード等のCOB基板を使用した製品の要求が高
まってきている。COB基板上でのICチップの封止は,直
接基板上に封止用樹脂を盛る方法がとられているが,こ
の樹脂の流れ方で製品の品質が左右される。With the recent miniaturization of personal computers and measuring devices, demands for products using COB substrates such as IC cards have been increasing. The method of sealing the IC chip on the COB substrate is to apply the sealing resin directly on the substrate, but the quality of the product depends on the flow of the resin.
本発明はこの際,基板上に封止樹脂が流れ出さない方
法として利用できる。In this case, the present invention can be used as a method for preventing the sealing resin from flowing onto the substrate.
従来のCOB基板上での封止樹脂の流れを抑制する方法
は,ある程度の高さを持った枠を基板上チップ搭載部の
周囲に接着するか,またはシリコン樹脂等の封止樹脂を
はじく性質を持った樹脂に印刷するか,またはスタンプ
で押して基板上に形成していた。Conventional methods of suppressing the flow of sealing resin on a COB substrate include bonding a frame with a certain height around the chip mounting area on the substrate, or repelling the sealing resin such as silicon resin. It was formed on a substrate by printing on a resin with a stamp or by pressing with a stamp.
これらの方法は確実に封止樹脂の流れ出しを抑制でき
るが,基板1枚につき10〜20円程度のコストアップとな
る。These methods can reliably prevent the flow of the sealing resin, but increase the cost by about 10 to 20 yen per substrate.
したがって,上記の枠や印刷等による方法は,コンピ
ュータゲーム用等の低価格で大量生産を目的とする製品
には使用できず,その場合は封止樹脂の粘性の調節だけ
でその流れを制御しなければならなかった。Therefore, the above-described method using frames or printing cannot be used for low-cost mass-production products such as computer games. In that case, the flow is controlled only by adjusting the viscosity of the sealing resin. I had to.
第3図(a),(b)は従来例による樹脂の流れを説
明する平面図である。3 (a) and 3 (b) are plan views illustrating the flow of resin according to the conventional example.
この例は低価格用製品で前記の枠等を利用しないで,
封止樹脂の粘性だけで流れを制御する場合である。This example is a low-priced product without using the above-mentioned frame, etc.
This is a case where the flow is controlled only by the viscosity of the sealing resin.
図において,1は基板(ガラスエポキシ製),1Aは基板
の露出面,2はICチップ搭載部,3は内部端子(銅箔),3は
外部端子(銅箔),5はチップ搭載部を開口して基板上に
被着された表面保護膜(ソルダレジスト:プリント板の
ソルダリングのマスクに使う感光製樹脂)の塗布面,6は
封止樹脂である。In the figure, 1 is the board (made of glass epoxy), 1A is the exposed surface of the board, 2 is the IC chip mounting part, 3 is the internal terminal (copper foil), 3 is the external terminal (copper foil), and 5 is the chip mounting part. The coating surface of the surface protective film (solder resist: photosensitive resin used for a soldering mask of a printed board), which is opened and adhered on the substrate, is a sealing resin.
第3図(a)は基板1の封止前の状態を示す。 FIG. 3A shows the state of the substrate 1 before sealing.
第3図(b)は封止樹脂6を塗布して封止を行った
後,封止樹脂6の流れすぎにより,封止樹脂6が外部端
子4上に被り,封止不良となった状態である。FIG. 3 (b) shows a state in which the sealing resin 6 is coated on the external terminals 4 due to excessive flow of the sealing resin 6 after the sealing resin 6 is applied and sealed, resulting in a sealing failure. It is.
〔発明が解決しようとする課題〕 従来例では封止樹脂の製造ロット差による流れ性の変
化等に対応できないという問題を生じていた。[Problems to be Solved by the Invention] In the conventional example, there has been a problem that it is not possible to cope with a change in flowability due to a difference in production lot of the sealing resin.
本発明はCOB基板を用いた半導体装置において,コス
トに全く影響を与えることなく封止樹脂の流れ出しを抑
制する構造および方法の提供を目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a structure and a method for suppressing the flow of a sealing resin without affecting the cost in a semiconductor device using a COB substrate.
上記課題の解決は, 1)基板上に半導体チップが搭載され,該基板上におい
て該チップの周囲に表面保護膜が被着され,該表面保護
膜に流れ抑制用開口を有し,該チップを覆って該流れ抑
制用開口まで封止樹脂が被覆されている半導体装置,あ
るいは 2)基板上に表面保護膜を被着し,該表面保護膜にチッ
プ搭載用開口と,該チップ搭載用開口の周囲に流れ抑制
用開口を形成する工程と,該基板上の該チップ搭載用開
口内に半導体チップを搭載する工程と,該チップを覆っ
て該流れ抑制用開口までを封止樹脂で被覆する工程とを
有する半導体装置の封止方法,あるいは 3)前記流れ抑制用開口が前記チップの周囲に設けられ
た帯状開口であることを特徴とする前記1)記載の半導
体装置,あるいは 4)前記流れ抑制用開口が前記チップの周囲に設けられ
た穴状開口の配列であることを特徴とする前記1)記載
の半導体装置により達成される。To solve the above problems, 1) a semiconductor chip is mounted on a substrate, a surface protection film is applied on the periphery of the chip on the substrate, and the surface protection film has an opening for suppressing flow. A semiconductor device covered with a sealing resin up to the flow suppressing opening, or 2) a surface protective film is applied on the substrate, and the chip mounting opening and the chip mounting opening are formed on the surface protective film. Forming a flow suppression opening around the periphery, mounting a semiconductor chip in the chip mounting opening on the substrate, and covering the chip with the sealing resin to cover the flow suppression opening; 3) the semiconductor device according to 1), wherein the flow suppressing opening is a band-shaped opening provided around the chip; or 4) the flow suppressing. Opening around the tip This is achieved by the semiconductor device according to the above 1), wherein the arrangement of the hole-shaped openings provided in the enclosure is provided.
封止樹脂の性質は,基板上に被着された表面保護用の
樹脂(ソルダレジスト)上ではよく流れるが,基板(ガ
ラスエポキシ)上では流れ難い。The properties of the sealing resin flow well on the surface protection resin (solder resist) adhered on the substrate, but hardly flow on the substrate (glass epoxy).
さらにある程度の段差があると,表面張力により流れ
難くなる。Further, if there is a certain level of step, it becomes difficult to flow due to surface tension.
本発明は以上の事実を利用して,基板の表面保護用の
樹脂膜に,チップ搭載用の開口の外側において細い溝状
の抜き部分(封止樹脂のい流れを抑制する開口)を形成
することにより,封止樹脂の流れを抑制するものであ
る。The present invention makes use of the above facts to form a thin groove-shaped cutout portion (opening for suppressing the flow of the sealing resin) outside the chip mounting opening in the resin film for protecting the surface of the substrate. Thereby, the flow of the sealing resin is suppressed.
この場合,流れ抑制用の開口は,基板作製時のエッチ
ング工程にてチップ搭載用の開口と同時に形成すること
が可能なため工程増はない。In this case, the flow suppressing opening can be formed simultaneously with the chip mounting opening in the etching step at the time of manufacturing the substrate, so that there is no increase in the number of steps.
第1図(a),(b)は本発明の一実施例を説明する
平面図である。1 (a) and 1 (b) are plan views illustrating an embodiment of the present invention.
図において,1基板(ガラスエポキシ製),1Aは基板の
露出面,2はICチップ搭載部,3は内部端子(銅箔にNi,Au
メッキ),4は外部端子(銅箔にNI,Auメッキ),5は基板
上に被着された表面保護膜(ソルダレジスト),6は封止
樹脂,7は基板表面に被着された表面保護膜のチップ搭載
用開口の周囲に開口された堀状の流れ抑制用開口であ
る。In the figure, 1 substrate (made of glass epoxy), 1A is the exposed surface of the substrate, 2 is the IC chip mounting part, 3 is the internal terminal (Ni, Au on copper foil)
Plating), 4 are external terminals (NI, Au plating on copper foil), 5 is a surface protective film (solder resist) deposited on the substrate, 6 is sealing resin, 7 is the surface deposited on the substrate surface This is a moat-like flow suppression opening that is opened around the chip mounting opening of the protective film.
第1図(a)は基板1の封止前の状態を示す。 FIG. 1A shows a state before the substrate 1 is sealed.
第1図(b)は封止樹脂6は塗布して封止を行った後
の状態を示す。封止樹脂6はチップ搭載用の開口を取り
囲む堀状の流れ抑制用開口7に阻まれて,流れすぎによ
る封止不良は発生しない。FIG. 1B shows a state after the sealing resin 6 has been applied and sealed. The sealing resin 6 is blocked by the moat-like flow suppressing opening 7 surrounding the chip mounting opening, so that sealing failure due to excessive flow does not occur.
この際,流れ抑制用開口7は,基板作製時に,基板上
に被着された表面保護膜のエッチング工程にてチップ搭
載用開口と同時に形成することが可能なため工程増とは
ならない。At this time, the flow suppressing opening 7 can be formed at the same time as the chip mounting opening in the step of etching the surface protective film applied on the substrate when the substrate is manufactured, so that the number of steps is not increased.
第2図は本発明の他の実施例を説明する平面図であ
る。FIG. 2 is a plan view for explaining another embodiment of the present invention.
この例では,流れ抑制用の開口は,チップ搭載用開口
の周囲に小さな穴状の開口7Aを密集して多数並べて配置
している。In this example, a large number of small hole-shaped openings 7A are arranged side by side around the chip mounting openings.
つぎに,製造方法を工程順に説明する。 Next, the manufacturing method will be described in the order of steps.
基板作製時に,基板上に被着された表面保護膜のエ
ッチング工程にてチップ搭載用開口と同時に流れ抑制用
開口7を形成する。At the time of manufacturing the substrate, a flow suppressing opening 7 is formed at the same time as the chip mounting opening in an etching step of the surface protective film deposited on the substrate.
チップ搭載部1に接着材(銀ペースト)を塗布し,
その上にICチップを載せ加熱して接着する。An adhesive (silver paste) is applied to the chip mounting portion 1,
The IC chip is placed on top of it and bonded by heating.
次いで,ICチップを内部端子3にワイャポテンシャル
する。Next, a wire potential is applied to the IC chip to the internal terminal 3.
チップを覆って封止樹脂(エポキシ)で被覆する。 The chip is covered with a sealing resin (epoxy).
この際,封止樹脂は流れ抑制用開口7で堰き止められ
るため,厚く被覆されてワイヤの露出や,チップの露出
を防止することができ,また流れ過ぎにより外部端子ま
で封止樹脂が流れ出すようなことはない。At this time, the sealing resin is blocked by the flow suppressing opening 7, so that the sealing resin is thickly covered to prevent the exposure of the wire and the chip, and that the sealing resin flows to the external terminals due to excessive flow. There is nothing.
封止樹脂の粘度が高過ぎる場合は被覆厚が大きくなり
過ぎ,広がり足りなく内部端子まで被覆できずワイヤが
露出する。そのため粘度を下げてゆくと流れ過ぎによる
上記の障害が起こるが,実施例ではこれを完全に防止す
ることができた。If the viscosity of the sealing resin is too high, the coating thickness will be too large, and the wire will be exposed without being sufficiently spread to cover the internal terminals. Therefore, when the viscosity is lowered, the above-mentioned obstacles due to excessive flow occur. However, in the embodiment, this could be completely prevented.
以上説明したように本発明によれば,COB基板を使用す
る半導体装置において,コストに全く影響を与えること
なく封止樹脂の流れ出しを抑制することができた。As described above, according to the present invention, in the semiconductor device using the COB substrate, it was possible to suppress the flow of the sealing resin without affecting the cost at all.
この結果,ICカード等のCOB基板を使用する半導体装置
の製造保留と信頼性の向上に寄与することができた。As a result, it was possible to contribute to the suspension of production and improvement of reliability of semiconductor devices using COB substrates such as IC cards.
第1図(a),(b)は本発明の一実施例を説明する平
面図, 第2図は本発明の他の実施例を説明する平面図, 第3図(a),(b)は従来例による樹脂の流れを説明
する平面図である。 図において, 1は基板(ガラスエポキシ製), 1Aは基板の露出面, 2はICチップ搭載部, 3は内部端子(銅箔にNi,Auメッキ), 4は外部端子(銅箔にNi,Auメッキ), 5は表面保護膜(ソルダレジスト)の塗布面, 6は封止樹脂, 7,7Aは流れ抑制用開口 である。1 (a) and 1 (b) are plan views illustrating an embodiment of the present invention, FIG. 2 is a plan view illustrating another embodiment of the present invention, and FIGS. 3 (a) and 3 (b). FIG. 3 is a plan view illustrating a flow of a resin according to a conventional example. In the figure, 1 is a substrate (made of glass epoxy), 1A is an exposed surface of the substrate, 2 is an IC chip mounting portion, 3 is an internal terminal (Ni, Au plating on a copper foil), 4 is an external terminal (Ni, a copper foil). Au plating), 5 is the surface to which the surface protective film (solder resist) is applied, 6 is the sealing resin, and 7, 7A are the openings for suppressing flow.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 棗 茂夫 愛知県春日井市高蔵寺町2丁目1844番2 富士通ヴィエルエスアイ株式会社内 (58)調査した分野(Int.Cl.6,DB名) H01L 23/28 - 23/30 H01L 21/56──────────────────────────────────────────────────続 き Continued from the front page (72) Inventor Shigeo Natsume 2-1844-2 Kozoji-cho, Kasugai-shi, Aichi Prefecture Inside Fujitsu VSI Co., Ltd. (58) Field surveyed (Int.Cl. 6 , DB name) H01L 23 / 28-23/30 H01L 21/56
Claims (4)
上において該チップの周囲に表面保護膜が被着され,該
表面保護膜に流れ抑制用開口を有し,該チップを覆って
該流れ抑制用開口まで封止樹脂が被覆されていることを
特徴とする半導体装置。1. A semiconductor chip is mounted on a substrate, a surface protection film is applied to the periphery of the chip on the substrate, the surface protection film has an opening for suppressing flow, and covers the chip. A semiconductor device, wherein a sealing resin is coated up to an opening for flow suppression.
膜にチップ搭載用開口と,該チップ搭載用開口の周囲に
流れ抑制用開口を形成する工程と, 該基板上の該チップ搭載用開口内に半導体チップを搭載
する工程と, 該チップを覆って該流れ抑制用開口までを封止樹脂で被
覆する工程とを有することを特徴とする半導体装置の封
止方法。2. A step of applying a surface protection film on a substrate, forming a chip mounting opening in the surface protection film, and a flow suppressing opening around the chip mounting opening. A method of sealing a semiconductor device, comprising: a step of mounting a semiconductor chip in a chip mounting opening; and a step of covering the chip and covering up to the flow suppression opening with a sealing resin.
設けられた帯状開口であることを特徴とする請求項1記
載の半導体装置。3. The semiconductor device according to claim 1, wherein said flow suppressing opening is a band-shaped opening provided around said chip.
設けられた穴状開口の配列であることを特徴とする請求
項1記載の半導体装置。4. The semiconductor device according to claim 1, wherein said flow suppressing openings are an array of hole-shaped openings provided around said chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23960890A JP2815225B2 (en) | 1990-09-10 | 1990-09-10 | Semiconductor device and sealing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23960890A JP2815225B2 (en) | 1990-09-10 | 1990-09-10 | Semiconductor device and sealing method therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04118950A JPH04118950A (en) | 1992-04-20 |
JP2815225B2 true JP2815225B2 (en) | 1998-10-27 |
Family
ID=17047278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23960890A Expired - Fee Related JP2815225B2 (en) | 1990-09-10 | 1990-09-10 | Semiconductor device and sealing method therefor |
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Country | Link |
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JP (1) | JP2815225B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10024376A1 (en) * | 2000-05-17 | 2001-12-06 | Infineon Technologies Ag | Semiconductor component and method for its production |
JP2008071859A (en) * | 2006-09-13 | 2008-03-27 | Shin Etsu Chem Co Ltd | Sealing method of minute electronic component |
-
1990
- 1990-09-10 JP JP23960890A patent/JP2815225B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04118950A (en) | 1992-04-20 |
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