JP2774409B2 - Flip chip mounting method - Google Patents
Flip chip mounting methodInfo
- Publication number
- JP2774409B2 JP2774409B2 JP6831992A JP6831992A JP2774409B2 JP 2774409 B2 JP2774409 B2 JP 2774409B2 JP 6831992 A JP6831992 A JP 6831992A JP 6831992 A JP6831992 A JP 6831992A JP 2774409 B2 JP2774409 B2 JP 2774409B2
- Authority
- JP
- Japan
- Prior art keywords
- printed wiring
- wiring board
- flip chip
- curing
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Wire Bonding (AREA)
Description
【0001】[0001]
【産業上の利用分野】この発明は、電子機器用プリント
配線板にフリップチップを搭載するフリップチップの搭
載方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a flip chip on a printed wiring board for electronic equipment.
【0002】[0002]
【従来の技術】フリップチップ型の部品を搭載するサブ
ストレイトとして、ガラス布/エポキシ板,アルミナ磁
気板,ポリイミドフィルム板などが代表的であったが、
フリップチップ本体とサブストレイトとの間に空間がで
き、熱伝導性,接着面積などの特性が通常のSOP,Q
FP等のパッケージより悪くなる。2. Description of the Related Art Glass cloth / epoxy plate, alumina magnetic plate, polyimide film plate and the like have been typical as substrates for mounting flip chip type components.
A space is formed between the flip chip body and the substrate, and the characteristics such as thermal conductivity and bonding area are normal SOP, Q
Worse than packages such as FP.
【0003】樹脂封じ内に空気がトラップされ、温度上
昇時に膨張し、接合バンプを浮き上がらせる問題があっ
た。その対策として、紫外線硬化性としたエポキシアク
リレイト,エポキシ/ポリイミド,ポリイミド等の樹脂
をプリント配線板に塗布し、選択的に現像し、フリップ
チップのバンプ配置用の孔あけを行う例があった。[0003] There is a problem that air is trapped in the resin seal and expands when the temperature rises, causing the bonding bumps to float. As a countermeasure, there has been an example in which a resin such as epoxy acrylate, epoxy / polyimide, or polyimide, which has been cured with ultraviolet light, is applied to a printed wiring board, selectively developed, and holes are formed for flip chip bump placement. .
【0004】しかしながら、これらの紫外線硬化性の樹
脂をプリント配線板の外層に用いた場合、硬化時の収縮
率が大きく、かつ、方向性が無秩序であるため、孔の位
置についての制御が困難で、バンプの位置と一致しなく
なる欠点があった。この理由は、これらの紫外線硬化性
樹脂がガラスラインフォースメントを有しているプリン
ト配線板からの反射光を受けることにある。また、紫外
線の透過率に影響して硬化が一様でなく、特にプリント
配線板の外面における境界の接合性の低下に直結する欠
点があった。However, when these ultraviolet curable resins are used for the outer layer of a printed wiring board, the position of the holes is difficult to control because the shrinkage during curing is large and the directionality is disordered. However, there was a disadvantage that the position of the bump did not match. The reason for this is that these ultraviolet curable resins receive reflected light from a printed wiring board having glass reinforcement. In addition, there is a disadvantage that the curing is not uniform due to the influence of the transmittance of ultraviolet rays, and this is directly linked to a decrease in the bonding property particularly at the boundary on the outer surface of the printed wiring board.
【0005】また、はんだ耐熱性も低く、リフローソル
ダリングの加熱により軟化したり、洗浄剤、例えばME
K(メチルエチルケトン),ジメチルホルムアルデヒド
等に溶解する欠点があった。また、温度や湿度による伸
縮率が大きく、厚さ方向の安定性は、表面方向と同様に
よくない欠点もあった。In addition, the soldering heat resistance is low, and the soldering agent may be softened by heating during reflow soldering, or may be washed with a cleaning agent such as ME.
There is a disadvantage that it dissolves in K (methyl ethyl ketone), dimethyl formaldehyde and the like. In addition, there is a disadvantage that the expansion and contraction ratio due to temperature and humidity is large and the stability in the thickness direction is not as good as in the surface direction.
【0006】電気特性的にも不安定で、特にマイグレー
ションについてその程度が大きい欠点があった。また、
価格的にも本体のプリント配線板と比べて10〜100
倍程度の高価なものであった。フリップチップ脚部の電
気的接続用に導電性接着剤を用いることもダイボンディ
ングの実績から考えられるが、従来のダイシアンダイア
ミド硬化剤を配合したエポキシ樹脂は、マイグレーショ
ンの加速性があり、さらにAステージからCステージへ
の硬化が速やかでBステージに保留することが困難であ
るため、フリップチップの取替,電気的検査に不便であ
った。There is a drawback that the electrical characteristics are unstable, and particularly the degree of migration is large. Also,
10-100 compared to the printed circuit board of the main unit
It was about twice as expensive. The use of a conductive adhesive for the electrical connection of the flip chip legs can also be considered from the results of die bonding, but the epoxy resin containing the conventional Dicyandiamide curing agent has the acceleration of migration, Since the curing from the A stage to the C stage is rapid and it is difficult to hold the B stage, it is inconvenient for flip chip replacement and electrical inspection.
【0007】[0007]
【発明が解決しようとする課題】従来、フリップチップ
のバンプの当接位置固定のため、アクリルまたはアクリ
ルとポリイミド,ポリイミド樹脂モノマーにフォトイニ
シエータを添加して、光感光性樹脂としプリント配線面
に形成し選択感光により光未照射部分を溶解して、プリ
ント配線板のコンタクト導体部分を底とする孔を形成し
ていた。この方法には、下記に示す問題点がある。Conventionally, in order to fix the contact position of the bump of the flip chip, a photoinitiator is added to acrylic or acrylic, polyimide and polyimide resin monomers to form a photosensitive resin on the printed wiring surface. Then, the non-light-irradiated portion is dissolved by selective exposure to form a hole having the bottom at the contact conductor portion of the printed wiring board. This method has the following problems.
【0008】 光感光性樹脂で形成したパターン孔の
位置精度が不安定である。 導体との接触によるマイグレーションが起こり、し
かもフォトイニシエータ添加による加速性がある。 光感光性樹脂層の厚さを、通常のコーティングの厚
さの15μmを超えて、50〜200μmにする必要が
あるが、プリント配線板との境界部において、硬化度が
不足する傾向がある。[0008] The positional accuracy of the pattern holes formed of the photosensitive resin is unstable. Migration occurs due to contact with a conductor, and there is acceleration due to the addition of a photoinitiator. The thickness of the photosensitive resin layer needs to be 50 to 200 μm, exceeding the normal coating thickness of 15 μm, but the degree of curing tends to be insufficient at the boundary with the printed wiring board.
【0009】 光感光性樹脂を溶解し穴を形成する際
に、底に位置するコンタクト部分の表面を非オーム性接
触化するのでフリップチップ部品の電気的接続を阻害す
る。 光感光性樹脂層の厚さ方向に対する温度および湿度
に対する伸縮性が、プリント配線板にくらべて高く、そ
のためバンプの接合部が浮き上がり接合部が離れ易い。When the photosensitive resin is melted to form the hole, the surface of the contact portion located at the bottom is made non-ohmic, so that the electrical connection of the flip chip component is hindered. The elasticity of the photosensitive resin layer in the thickness direction with respect to the temperature and humidity is higher than that of the printed wiring board, so that the bonding portion of the bump floats and the bonding portion is easily separated.
【0010】 バンプ接合部の接合補助手段として銀
ペイントを用いた公知例がU.S.P.5,014,1
11(May 7,1991)に見られるが、これは、
フリップチップ部品のバンプと、前記孔の底部導体との
接触の離脱をつなぐためであり、銀ペイントの永久硬化
後の湿度による伸縮値が大きすぎること、銀のマイグレ
ーションに対して、何等の対策が行われていない。A known example using silver paint as a joining assisting means for a bump joining portion is disclosed in U.S. Pat. S. P. 5,014,1
11 (May 7, 1991),
This is to connect the detachment of the contact between the bump of the flip chip component and the bottom conductor of the hole, and there is no measure against the excessive expansion or contraction value due to humidity after permanent curing of the silver paint and migration of silver. Not done.
【0011】 フリップチップの実装検査と検査後の
取替が不能に近く、光硬化性樹脂層を形成したプリント
配線板をフリップチップとともに廃棄することになる。 この発明の目的は、フリップチップの配置精度を向上さ
せるとともにプリント配線板への接合強度を向上させ、
電気特性の向上をはかり、さらにプリント配線板の使用
効率を高めることのできるフリップチップの搭載方法を
提供することである。The flip chip mounting inspection and replacement after the inspection are almost impossible, and the printed wiring board on which the photocurable resin layer is formed is discarded together with the flip chip. An object of the present invention is to improve the placement accuracy of a flip chip and improve the bonding strength to a printed wiring board,
An object of the present invention is to provide a flip chip mounting method capable of improving electrical characteristics and further improving the use efficiency of a printed wiring board.
【0012】[0012]
【課題を解決するための手段】この発明のフリップチッ
プの搭載方法は、アーラミド短繊維紙をラインフォース
メントとし、アロマティックアミンをアダクト性硬化剤
として配合したエポキシ系樹脂を含浸樹脂とするプリプ
レグシートを加熱してリジッド性を付与した後、フリッ
プチップのバンプ搭載位置に孔を開けて孔あき基板を形
成する工程と、プリント配線板の表面に逆スパッタリン
グを行い、孔あき基板をプリント配線板に圧接しながら
BステージからCステージに加熱硬化して孔あき基板を
プリント配線板に接着する工程と、温度および湿度に対
して孔あき基板の厚さ方向の伸縮率と同程度の厚さ方向
の伸縮率を有し、樹脂バインダとしてアロマティックア
ミンをアダクトしたエポキシ系の樹脂からなるAステー
ジの導電性ペイントを、孔あき基板の孔に注入し、フリ
ップチップのバンプを孔に挿入する工程と、導電性ペイ
ントをBステージに加熱硬化して接触抵抗値をプリント
配線板の導体のレベルに下げる第1次硬化工程と、導電
性ペイントをCステージに加熱硬化する第2次硬化工程
とを含むことを特徴とする。SUMMARY OF THE INVENTION A method for mounting a flip chip according to the present invention is a prepreg sheet comprising an aramide short fiber paper as a line reinforcement and an epoxy resin containing an aromatic amine as an adduct hardener and an impregnating resin. After heating to impart rigidity, a hole is formed at the flip chip bump mounting position to form a perforated substrate, and reverse sputtering is performed on the surface of the printed wiring board, and the perforated substrate is formed on the printed wiring board. A step of heating and hardening from the B stage to the C stage while pressing and bonding the perforated substrate to the printed wiring board; A-stage conductive pane made of epoxy-based resin with an elasticity ratio and an aromatic amine adduct as a resin binder Is injected into a hole of a perforated substrate, and a bump of a flip chip is inserted into the hole; and a conductive paint is heated and cured on a B stage to lower the contact resistance to the level of the conductor of the printed wiring board. The method includes a curing step and a second curing step of heating and curing the conductive paint to a C stage.
【0013】[0013]
【作用】この発明の構成によれば、アーラミド短繊維紙
をラインフォースメントとし、アロマティックアミンを
アダクト性硬化剤として配合したエポキシ系樹脂を含浸
樹脂とするプリプレグシートを加熱してリジッド性を付
与した後、孔を開けて形成した孔あき基板は、温度およ
び湿度による寸法変化が少なく、孔の位置精度が安定
し、フリップチップの配置精度の向上をはかることがで
きる。According to the structure of the present invention, rigidity is imparted by heating a prepreg sheet using an aramide short fiber paper as a line reinforcement and an epoxy resin impregnated with an epoxy resin blended with an aromatic amine as an adduct curing agent. After that, the perforated substrate formed by perforating the hole has little dimensional change due to temperature and humidity, stabilizes the positional accuracy of the hole, and can improve the placement accuracy of the flip chip.
【0014】また、プリント配線板の表面に逆スパッタ
リングを行うことにより、孔あき基板とプリント配線板
との境界面の接合強度が向上し、フリップチップのバン
プとプリント配線板の導体との接合強度の向上がはかれ
る。また、温度および湿度に対して孔あき基板の厚さ方
向の伸縮率と同程度の厚さ方向の伸縮率を有し、樹脂バ
インダとしてアロマティックアミンをアダクトしたエポ
キシ系の樹脂からなる導電性ペイントを、フリップチッ
プのバンプとプリント配線板の導体との接合部に用いる
ことにより、接合強度が増大するとともに、マイグレー
ションなどの電気特性の向上をはかることができる。Further, by performing reverse sputtering on the surface of the printed wiring board, the bonding strength at the boundary between the perforated substrate and the printed wiring board is improved, and the bonding strength between the flip chip bumps and the conductor of the printed wiring board is improved. Is improved. In addition, a conductive paint made of an epoxy-based resin that has the same degree of expansion and contraction in the thickness direction of a perforated substrate with respect to temperature and humidity, and has an aromatic amine adduct as a resin binder. Is used for the joint between the bump of the flip chip and the conductor of the printed wiring board, thereby increasing the joining strength and improving the electrical characteristics such as migration.
【0015】さらに、上記導電性ペイントは第1次硬化
工程におけるBステージを維持することができ、この状
態でフリップチップの機能検査を行い、不良チップを良
品チップに取り替えたのち、第2次硬化工程を行うこと
により、プリント配線板の使用効率を高めることができ
る。Further, the conductive paint can maintain the B stage in the primary curing step. In this state, the function inspection of the flip chip is performed, the defective chip is replaced with a good chip, and then the secondary curing is performed. By performing the process, the use efficiency of the printed wiring board can be increased.
【0016】[0016]
【実施例】この発明の一実施例を図面に基づいて説明す
る。図1はこの発明の一実施例のフリップチップの搭載
方法を示す工程断面図である。まず、図1(a) に示すよ
うに、15mm×15mmサイズの半導体フリップチッ
プ1のバンプ(脚)2の長さにしたがって厚さを選んだ
厚さ約0.2mmのプリプレグシート3を用意する。フ
リップチップ1のバンプ2のピッチは125μmであ
る。プリプレグシート3は、ラインフォースメント(骨
材,繊維)として、マイナスの温度膨張係数をもつアー
ラミド短繊維紙を用い、含浸樹脂として、アロマティッ
クアミンをアダクト性硬化剤として50重量パーセント
配合し、さらに外部から侵入するCl- (塩素イオン)
のトラップ剤として、酸化亜鉛の粉末を微量添加したエ
ポキシ樹脂(以下「アロマエポキシ」という)を用いて
いる。そして、アロマエポキシを55重量パーセントと
してアーラミド短繊維紙に含浸したBステージのプリプ
レグシート3とする。このプリプレグシート3は、10
5℃,10分の第1次加熱により、あとの孔加工に耐え
るリジッド性を具備する。An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a process sectional view showing a flip chip mounting method according to one embodiment of the present invention. First, as shown in FIG. 1A, a prepreg sheet 3 having a thickness of about 0.2 mm, which is selected according to the length of a bump (leg) 2 of a semiconductor flip chip 1 having a size of 15 mm × 15 mm. . The pitch of the bumps 2 of the flip chip 1 is 125 μm. The prepreg sheet 3 uses an aramid short fiber paper having a negative coefficient of thermal expansion as a line reinforcement (aggregate, fiber), and blends 50% by weight of an aromatic amine as an impregnating resin as an adduct hardener. Cl entering from the outside - (chlorine ions)
As a trapping agent, an epoxy resin to which a trace amount of zinc oxide powder is added (hereinafter referred to as "aroma epoxy") is used. Then, a B-stage prepreg sheet 3 impregnated with aramid staple fiber paper with 55% by weight of aroma epoxy is used. This prepreg sheet 3 has 10
By primary heating at 5 ° C. for 10 minutes, it has rigidity to withstand subsequent hole processing.
【0017】つぎに、図1(b) に示すように、プリプレ
グシート3に通常のドリル法により直径約0.15mm
のバンプ受入れ用の孔4を形成し、孔あき基板5とす
る。ここでフリップチップの装着予定部分をチップ本体
1′,脚部2′として示す。なお、孔4は、パンチ,レ
ーザ等により形成してもよい。つぎに、図1(c) に示す
ように、例えば厚さ1.5mmのポリイミドガラスやエ
ポキシガラスなどの表面に銅箔または銅めっきにより導
体7を形成したプリント配線板6に、孔あき基板5を当
接して、加圧(10kg/cm2 )下、160℃,30
分の第2次加熱することにより、図1(d) に示すよう
に、孔あき基板5をプリント配線板6へ接着し、孔4は
有底の穴8となる。Next, as shown in FIG. 1 (b), the prepreg sheet 3 is made to have a diameter of about 0.15 mm by a usual drilling method.
A hole 4 for receiving a bump is formed to form a perforated substrate 5. Here, the portions where the flip chip is to be mounted are shown as a chip body 1 'and a leg 2'. The holes 4 may be formed by a punch, a laser, or the like. Next, as shown in FIG. 1 (c), a printed wiring board 6 having a conductor 7 formed by copper foil or copper plating on a surface of, for example, 1.5 mm thick polyimide glass or epoxy glass is provided with a perforated substrate 5. At 160 ° C., 30 ° C. under pressure (10 kg / cm 2 ).
By the second heating, the perforated substrate 5 is bonded to the printed wiring board 6 as shown in FIG. 1D, and the hole 4 becomes a hole 8 with a bottom.
【0018】なお、Bステージの樹脂硬化レベルにある
孔あき基板5をプリント配線板6に接着するに際して、
Cステージの樹脂硬化レベルにあるプリント配線板6の
表面の導体7および絶縁面に対して、逆スパッタリング
を行う。この逆スパッタリングにより、硬化工程中に、
エポキシ樹脂の硬化面が清浄化されミクロポーラスな表
面を得て、孔あき基板6の含浸樹脂をBステージからC
ステージの硬化レベルに加熱硬化する際の被接着を高め
る。逆スパッタリングは、25cm×25cmの大きさ
に対して、高周波パワー1kW,5分、窒素ガス導入前
の真空度6.0×10-7Torr、窒素ガス導入後の真
空度4.6×10-3Torrとして行う。接着温度は、
170℃,30分で、保持圧力は第2次加熱と同じ20
kg/mm2 である。When bonding the perforated substrate 5 at the resin curing level of the B stage to the printed wiring board 6,
Reverse sputtering is performed on the conductor 7 and the insulating surface on the surface of the printed wiring board 6 at the resin curing level of the C stage. By this reverse sputtering, during the curing process,
The cured surface of the epoxy resin is cleaned to obtain a microporous surface, and the impregnated resin of the perforated substrate 6 is transferred from the B stage to the C
Enhance adhesion when heating and curing to the stage curing level. Reverse sputtering, to the size of 25 cm × 25 cm, RF power 1 kW, 5 minutes, nitrogen gas inlet before vacuum 6.0 × 10 -7 Torr, a nitrogen gas inlet after the vacuum degree 4.6 × 10 - Perform as 3 Torr. The bonding temperature is
At 170 ° C. for 30 minutes, the holding pressure is the same as that of the second heating: 20
kg / mm 2 .
【0019】つぎに、図1(d) に示すように、導電性ペ
イント9を有底の穴8に満たし、フリップチップ1のバ
ンプ2を導電性ペイント9に当接する。このとき、物理
的には導電性ペイント液に浮いているような状態にあ
る。導電性ペイント9として、銀粉−エポキシ樹脂系の
ものを用い、さらにエポキシ樹脂系としてアロマエポキ
シ系を用いて、75℃,10分の第1次硬化により、導
電性ペイント9をBステージ(半溶融状態)とし、導通
抵抗を10〜100ミリオームに低下させる。この状態
で、フリップチップ1のプリント配線板6への実装状態
の機能動作特性の測定接続を可能にする。Next, as shown in FIG. 1D, the conductive paint 9 is filled in the bottomed hole 8, and the bump 2 of the flip chip 1 is brought into contact with the conductive paint 9. At this time, it is physically in a state of floating in the conductive paint liquid. Using a silver powder-epoxy resin-based material as the conductive paint 9 and an aroma epoxy-based epoxy resin, the conductive paint 9 is B-staged (semi-melted) by primary curing at 75 ° C. for 10 minutes. State), and the conduction resistance is reduced to 10 to 100 mOhm. In this state, it is possible to measure and connect the functional operation characteristics of the flip chip 1 mounted on the printed wiring board 6.
【0020】良品と判定した場合には、プリント配線板
6への固定接続を計るため、125℃,10分の炉に、
フリップチップ1を搭載したプリント配線板6を入れ、
導電性ペイント9をCステージの第2次硬化し、導通抵
抗を10ミリオーム以下1ミリオームまでとする。一
方、不良品と判定した場合には、フリップチップ1を抜
去することは容易な状態にあり、新たなチップと取り替
える。この際、導電性ペイントを若干量追加して、第1
次硬化を行い、良品と判定されると、第2次硬化を行
う。If it is determined that the product is non-defective, a fixed connection to the printed wiring board 6 is performed in a furnace at 125 ° C. for 10 minutes.
Insert the printed wiring board 6 on which the flip chip 1 is mounted,
The conductive paint 9 is secondarily cured in the C stage to reduce the conduction resistance from 10 mOhm to 1 mOhm. On the other hand, if it is determined that the product is defective, it is easy to remove the flip chip 1 and replace it with a new chip. At this time, a small amount of conductive paint is added to make the first
The secondary curing is performed, and if it is determined to be a non-defective product, the secondary curing is performed.
【0021】以上のようにこの実施例によれば、温度,
湿度による伸縮率の大きい光感光性樹脂層の代わりに、
BステージまたはCステージで孔加工する孔あき基板5
として、導体を選択エッチング法で加工するのに耐え
て、かつ、孔をドリル,パンチレーザ等によって形成す
るに耐え、温度,湿度による寸法変化の少ない基板材料
を用いているため、孔4(穴8)の位置精度を得ること
ができる。As described above, according to this embodiment, the temperature,
Instead of a photosensitive resin layer with a large expansion and contraction ratio due to humidity,
Perforated substrate 5 to be drilled on B stage or C stage
Since a substrate material that can withstand the processing of the conductor by the selective etching method, withstands the formation of the hole by a drill, a punch laser, or the like, and has a small dimensional change due to temperature and humidity, is used. The position accuracy of 8) can be obtained.
【0022】また、孔あき基板5は、骨材として、従来
のNa+ (ナトリウムイオン)の多く含まれるガラス繊
維の代わりに、Na+ を数ppm以下としたポリパラフ
ェニレンジフェニルエーテルテレフタラミドの繊維を用
い、含浸樹脂として、従来のエポキシ硬化剤として数重
量パーセント添加しているジシアンジアミドを少なく
し、アロマティックアミンをほぼ等量にアダクトしたも
のを用い、さらに外部から侵入するCl- (塩素イオ
ン)のトラップ剤として、酸化亜鉛の粉末を微量添加し
たものを新規な配合樹脂として用いる。この硬化温度
は、下部のプリント配線板6の種類にもよるが、150
〜180℃に設定して対応する。なお、ポリイミド樹脂
を用いたのでは、逆スパッタリングによる前処理をポリ
イミド樹脂に行ったが、硬化温度が220℃となり、下
部のプリント配線板の耐熱限界を超えることが多く、導
体が酸化し、境界の接着性もよくない。従来のダイシア
ンダイアミド硬化のエポキシ樹脂では、Tg(ガラス転
移温度)が最大125℃と低く、逆スパッタリングやプ
ラズマ処理により表層部が溶けたり焦げたりして、接着
性は改良をみない。新規な配合樹脂は、Tgが最大19
5℃と高く、接着に適した表面処理がなされる。そのた
め、イオン性マイグレーション耐久性を1〜2桁延長す
ることができる。The perforated substrate 5 is made of a fiber made of polyparaphenylenediphenyl ether terephthalamide in which Na + is several ppm or less, instead of the conventional glass fiber containing a large amount of Na + (sodium ions) as an aggregate. Using a resin obtained by reducing the amount of dicyandiamide added as a conventional epoxy curing agent by several percent by weight as an impregnating resin and adducting an aromatic amine in an approximately equal amount, and further entering Cl − (chlorine ion) from the outside Of a small amount of zinc oxide powder is used as a novel compounding resin. Although this curing temperature depends on the type of the lower printed wiring board 6,
It corresponds by setting to ~ 180 ° C. In addition, when the polyimide resin was used, the pretreatment by reverse sputtering was performed on the polyimide resin, but the curing temperature was 220 ° C., which often exceeded the heat resistance limit of the lower printed wiring board, the conductor was oxidized, and the boundary Also has poor adhesion. Conventional epoxy resin cured with dicyandiamide has a low Tg (glass transition temperature) of 125 ° C. at the maximum, and the surface layer is melted or burnt by reverse sputtering or plasma treatment, and the adhesion is not improved. New compound resin has Tg of up to 19
As high as 5 ° C., surface treatment suitable for bonding is performed. Therefore, the ionic migration durability can be extended by one to two digits.
【0023】孔あき基板5とプリント配線板6の層間接
着は、孔あき基板5としてアーラミドエポキシプリント
配線板の場合、逆スパッタなしでは、0.5kg/cm
であったが、逆スパッタにより、5kg/cmが得られ
た。但し、孔あき基板としてダイシアンダイアミド硬化
のエポキシ含浸ガラス基材板では、いずれも1/5〜1
/10の強度しか得られず殆ど実用性がない。The interlayer adhesion between the perforated substrate 5 and the printed wiring board 6 is 0.5 kg / cm without reverse sputtering when the perforated substrate 5 is an aramid epoxy printed wiring board.
However, 5 kg / cm was obtained by reverse sputtering. However, in the case of an epoxy-impregnated glass base plate cured with dicyandiamide as a perforated substrate, all are 1/5 to 1
/ 10 strength is hardly obtained.
【0024】さらに、熱硬化法の適用により孔あき基板
5の均一硬化が実現される。硬化時間は、10〜120
分であり、新規な配合樹脂の硬化温度は、ポリイミド樹
脂の215〜350℃より低く、215℃のはんだ付け
を許容可能な程度にとどまり、孔あき基板5とプリント
配線板6の境界の硬化不十分を解消し、さらに接着力も
飛躍的に向上する。Further, uniform hardening of the perforated substrate 5 is realized by applying the thermosetting method. Curing time is 10-120
The curing temperature of the novel compounded resin is lower than the polyimide resin of 215 to 350 ° C., and the soldering at 215 ° C. is acceptable, and the curing of the boundary between the perforated substrate 5 and the printed wiring board 6 is not completed. Sufficient elimination is achieved, and the adhesive strength is dramatically improved.
【0025】また、フリップチップ1のバンプ1とプリ
ント配線板6の導体7とのコンタクト部分の電気的接続
も、孔あき基板5の新規な配合樹脂の導入により、ガス
放出が僅少なため、良好なものとなる。また、孔あき基
板5として、従来の光硬化型樹脂から熱硬化型エポキシ
樹脂の新規材料を用いる。そして、温度,湿度による伸
縮率と、プリント配線板に対する接着性を向上させる。
イオン性不純物に関して、エポキシ樹脂の硬化剤を、従
来のジシアンジアミドの数重量パーセントの添加量を減
少または廃し、アロマティックアミンの50重量パーセ
ント前後をアダクトの形で配合し、均質な熱硬化物と
し、Tgも、従来の110〜125℃から、150〜1
95℃に向上させる。この実施例に関しては190℃と
している。そして、厚さ方向の伸縮性は、従来の30〜
50ppm/℃,吸湿量0.4〜0.5重量パーセント
を、12〜23ppm/℃,吸湿量0.2〜0.3重量
パーセントに向上する。なお、接着性については、従来
の0.1〜0.3kg/cmから、0.4〜1.6kg
/cmに向上する。この実施例では、105℃,10分
の第1次加熱、160℃,30分の第2次加熱を通じ
て、寸法変化は0.1%以内であり、単一のフリップチ
ップの装着精度に充分対応できる。通常のダイシアンダ
イアミド硬化のエポキシ樹脂では、3%を超え、10%
に達する。硬化温度は、プリント配線板6の種類にもよ
るが、150〜180℃に設定して対応する。Also, the electrical connection at the contact portion between the bump 1 of the flip chip 1 and the conductor 7 of the printed wiring board 6 is excellent because the introduction of a new compound resin of the perforated substrate 5 causes a small amount of gas release. It becomes something. Further, as the perforated substrate 5, a new material of a thermosetting epoxy resin from a conventional photocuring resin is used. Then, the expansion and contraction rate due to temperature and humidity and the adhesiveness to the printed wiring board are improved.
Regarding ionic impurities, the curing agent of the epoxy resin is reduced or abolished by several percent by weight of the conventional dicyandiamide, and about 50 percent by weight of the aromatic amine is blended in the form of an adduct to obtain a homogeneous thermosetting product. The Tg is also increased from the conventional 110 to 125 ° C. to 150 to 1
Increase to 95 ° C. The temperature is set to 190 ° C. for this embodiment. And the elasticity in the thickness direction is 30 to
50 ppm / ° C, 0.4-0.5 weight percent moisture absorption is improved to 12-23 ppm / ° C, 0.2-0.3 weight percent moisture absorption. In addition, about 0.1-0.3kg / cm of conventional about 0.1-0.3kg / cm, it is 0.4-1.6kg.
/ Cm. In this embodiment, the dimensional change is within 0.1% through the primary heating at 105 ° C. for 10 minutes and the secondary heating at 160 ° C. for 30 minutes, which sufficiently corresponds to the mounting accuracy of a single flip chip. it can. More than 3% for ordinary dicyandiamide-cured epoxy resin, 10%
Reach The curing temperature depends on the type of the printed wiring board 6, but is set at 150 to 180 ° C. to respond.
【0026】なお、バンプ接合部の接合補助手段として
銀ペイントを用いた公知例がU.S.P.5,014,
111(May 7,1991)に見られるが、これ
は、フリップチップ部品のバンプと、孔の底部導体との
接触の離脱をつなぐためであり、銀ペイントの永久硬化
後の湿度による伸縮値が大きすぎること、銀のマイグレ
ーションに対して、何等の対策が行われていなかった。
これに対し、この実施例によれば、バンプ接合部の新規
の熱硬化性の銀ペイントとして、その樹脂バインダとし
て用いるエポキシ樹脂の硬化剤を、従来のジシアンジア
ミドの数重量パーセントの添加量を減少または廃し、エ
ポキシ樹脂に対して、アロマティックアミンの50重量
パーセント前後をアダクトの形で配合し、従来より安定
したBステージおよびCステージの状態を維持し、とり
わけ機能抵抗値として1メグオームから100ミリオー
ムへのスイッチング的変化を、中間硬化の条件70〜8
5℃,5〜20分の条件で実現する。また、イオン性不
純物の量を、5ppm以内とし、マイグレーション傾向
を解消し、1重量パーセント以内のZn(亜鉛)添加を
導体粉側にておこない、マイグレーション抑制強化剤と
して作用させる。そして、PCT2気圧,直流電圧印加
で、従来の1時間以内を、100時間以上にできる。It is to be noted that a known example using silver paint as a joining assisting means for a bump joining portion is disclosed in U.S. Pat. S. P. 5,014,
111 (May 7, 1991), which is to connect the detachment of the contact between the bump of the flip-chip component and the bottom conductor of the hole, and the expansion and contraction value of the silver paint due to humidity after permanent curing is large. No countermeasures were taken against excessive migration and silver migration.
In contrast, according to this embodiment, as a novel thermosetting silver paint for the bump joint, the amount of the epoxy resin curing agent used as the resin binder is reduced by several percent by weight of conventional dicyandiamide or Abolished and blended around 50% by weight of aromatic amine with epoxy resin in the form of adduct to maintain more stable B-stage and C-stage than before, especially from 1 megohm to 100 milliohm as functional resistance Of the intermediate curing conditions 70 to 8
It is realized at 5 ° C. for 5 to 20 minutes. Further, the amount of the ionic impurities is set to 5 ppm or less, the tendency of migration is eliminated, and Zn (zinc) of 1% by weight or less is added on the conductor powder side to act as a migration suppressing and strengthening agent. By applying a PCT pressure of 2 atmospheres and applying a DC voltage, it is possible to reduce the conventional time within one hour to 100 hours or more.
【0027】また、フリップチップ1のバンプ2の接合
部に、導電性ペイント9を穴8に注入し、その接続抵抗
を低め導通状態とする第1次硬化と、接合強度を得る第
2次硬化とを併用することにより、第1次硬化後に機能
的な電気特性の測定を行い、不良と判定したフリップチ
ップ1の取替を可能とし、多くの場合多層からなる高価
なプリント配線板6の再生使用を可能とする。Also, conductive paint 9 is injected into the holes 8 at the joints of the bumps 2 of the flip chip 1 to lower the connection resistance and make a conductive state, and a second hardening for obtaining the bonding strength is performed. In combination with the above, the functional electrical characteristics are measured after the primary curing, and the flip chip 1 determined to be defective can be replaced. In many cases, the expensive printed wiring board 6 composed of multiple layers is reproduced. Enable use.
【0028】なお、アロマエポキシをアーラミド繊維か
らなる布または紙に含浸したものをプリント配線板6に
用いてもよい。A material obtained by impregnating cloth or paper made of aramid fiber with aroma epoxy may be used for the printed wiring board 6.
【0029】[0029]
【発明の効果】この発明のフリップチップの搭載方法に
よれば、アーラミド短繊維紙をラインフォースメントと
し、アロマティックアミンをアダクト性硬化剤として配
合したエポキシ系樹脂を含浸樹脂とするプリプレグシー
トを加熱してリジッド性を付与した後、孔を開けて形成
した孔あき基板は、温度および湿度による寸法変化が少
なく、孔の位置精度が安定し、フリップチップの配置精
度の向上をはかることができる。According to the flip chip mounting method of the present invention, a prepreg sheet made of an aramide short fiber paper as a line reinforcement and an epoxy resin impregnated with an epoxy resin containing an aromatic amine as an adduct curing agent is heated. After the rigidity is imparted, the perforated substrate formed by perforating the hole has a small dimensional change due to temperature and humidity, stabilizes the position accuracy of the hole, and can improve the placement accuracy of the flip chip.
【0030】また、プリント配線板の表面に逆スパッタ
リングを行うことにより、孔あき基板とプリント配線板
との境界面の接合強度が向上し、フリップチップのバン
プとプリント配線板の導体との接合強度の向上がはかれ
る。また、温度および湿度に対して孔あき基板の厚さ方
向の伸縮率と同程度の厚さ方向の伸縮率を有し、樹脂バ
インダとしてアロマティックアミンをアダクトしたエポ
キシ系の樹脂からなる導電性ペイントを、フリップチッ
プのバンプとプリント配線板の導体との接合部に用いる
ことにより、接合強度が増大するとともに、マイグレー
ションなどの電気特性の向上をはかることができる。By performing reverse sputtering on the surface of the printed wiring board, the bonding strength at the interface between the perforated substrate and the printed wiring board is improved, and the bonding strength between the flip chip bumps and the conductor of the printed wiring board is improved. Is improved. In addition, a conductive paint made of an epoxy-based resin that has the same degree of expansion and contraction in the thickness direction of a perforated substrate with respect to temperature and humidity, and has an aromatic amine adduct as a resin binder. Is used for the joint between the bump of the flip chip and the conductor of the printed wiring board, thereby increasing the joining strength and improving the electrical characteristics such as migration.
【0031】さらに、上記導電性ペイントは第1次硬化
工程におけるBステージを維持することができ、この状
態でフリップチップの機能検査を行い、不良チップを良
品チップに取り替えたのち、第2次硬化工程を行うこと
により、プリント配線板の使用効率を高めることができ
る。Further, the conductive paint can maintain the B stage in the first curing step. In this state, the function of the flip chip is inspected, the defective chip is replaced with a good chip, and then the second curing is performed. By performing the process, the use efficiency of the printed wiring board can be increased.
【図1】この発明の一実施例のフリップチップの搭載方
法を示す工程断面図である。FIG. 1 is a process sectional view showing a flip chip mounting method according to an embodiment of the present invention.
1 フリップチップ 2 バンプ 3 プリプレグシート 4 孔 5 孔あき基板 6 プリント配線板 7 導体 8 穴 9 導電性ペイント DESCRIPTION OF SYMBOLS 1 Flip chip 2 Bump 3 Prepreg sheet 4 Hole 5 Perforated board 6 Printed wiring board 7 Conductor 8 Hole 9 Conductive paint
Claims (1)
チップを、表面に導体を形成したプリント配線板へ搭載
するフリップチップの搭載方法であって、 アーラミド短繊維紙をラインフォースメントとし、アロ
マティックアミンをアダクト性硬化剤として配合したエ
ポキシ系樹脂を含浸樹脂とするプリプレグシートを加熱
してリジッド性を付与した後、前記フリップチップのバ
ンプ搭載位置に孔を開けて孔あき基板を形成する工程
と、 前記プリント配線板の表面に逆スパッタリングを行い、
前記孔あき基板を前記プリント配線板に圧接しながらB
ステージからCステージに加熱硬化して前記孔あき基板
を前記プリント配線板に接着する工程と、 温度および湿度に対して前記孔あき基板の厚さ方向の伸
縮率と同程度の厚さ方向の伸縮率を有し、樹脂バインダ
としてアロマティックアミンをアダクトしたエポキシ系
の樹脂からなるAステージの導電性ペイントを、前記孔
あき基板の孔に注入し、前記フリップチップのバンプを
前記孔に挿入する工程と、 前記導電性ペイントをBステージに加熱硬化して接触抵
抗値を前記プリント配線板の導体のレベルに下げる第1
次硬化工程と、 前記導電性ペイントをCステージに加熱硬化する第2次
硬化工程とを含むことを特徴とするフリップチップの搭
載方法。1. A method of mounting a flip chip having a connection structure having a bump structure on a printed wiring board having a conductor formed on a surface thereof, the method comprising the steps of: After heating a prepreg sheet containing an epoxy resin impregnated resin blended as an adduct curing agent to impart rigidity, forming a perforated substrate by opening holes at the bump mounting positions of the flip chip, Perform reverse sputtering on the surface of the printed wiring board,
While pressing the perforated board against the printed wiring board,
Bonding the perforated substrate to the printed wiring board by heating and curing from a stage to a C stage; and expanding and contracting in a thickness direction of the thickness direction of the perforated substrate with respect to temperature and humidity. A step of injecting an A-stage conductive paint made of an epoxy-based resin having an aromatic amine as a resin binder into the hole of the perforated substrate, and inserting the flip chip bump into the hole. A first step of heating and curing the conductive paint on a B stage to lower the contact resistance value to the level of the conductor of the printed wiring board;
A method for mounting a flip chip, comprising: a next curing step; and a second curing step of heating and curing the conductive paint on a C stage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6831992A JP2774409B2 (en) | 1992-03-26 | 1992-03-26 | Flip chip mounting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6831992A JP2774409B2 (en) | 1992-03-26 | 1992-03-26 | Flip chip mounting method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05275490A JPH05275490A (en) | 1993-10-22 |
JP2774409B2 true JP2774409B2 (en) | 1998-07-09 |
Family
ID=13370386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6831992A Expired - Fee Related JP2774409B2 (en) | 1992-03-26 | 1992-03-26 | Flip chip mounting method |
Country Status (1)
Country | Link |
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JP (1) | JP2774409B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2812238B2 (en) * | 1995-03-10 | 1998-10-22 | 日本電気株式会社 | Mounting method of LSI package having metal bump |
JP6019983B2 (en) * | 2012-09-18 | 2016-11-02 | 日本電気株式会社 | Semiconductor package inspection method and mounting method and mounting structure using the same |
-
1992
- 1992-03-26 JP JP6831992A patent/JP2774409B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05275490A (en) | 1993-10-22 |
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