JP2574559B2 - Image sensor manufacturing method - Google Patents

Image sensor manufacturing method

Info

Publication number
JP2574559B2
JP2574559B2 JP3193131A JP19313191A JP2574559B2 JP 2574559 B2 JP2574559 B2 JP 2574559B2 JP 3193131 A JP3193131 A JP 3193131A JP 19313191 A JP19313191 A JP 19313191A JP 2574559 B2 JP2574559 B2 JP 2574559B2
Authority
JP
Japan
Prior art keywords
light
image sensor
conductor layer
insulating resin
circuit conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3193131A
Other languages
Japanese (ja)
Other versions
JPH0536960A (en
Inventor
栄一郎 田中
哲朗 中村
慎司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3193131A priority Critical patent/JP2574559B2/en
Publication of JPH0536960A publication Critical patent/JPH0536960A/en
Application granted granted Critical
Publication of JP2574559B2 publication Critical patent/JP2574559B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は光学画像を電気信号に変
換する1次元イメージセンサの製造方法に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a one-dimensional image sensor for converting an optical image into an electric signal.

【0002】[0002]

【従来の技術】従来、イメージセンサ等の半導体素子を
ベアチップ実装するには、図3に於て表面上に回路導体
層34を形成したフィルムなどの透光性基板30に、光
硬化型絶縁樹脂33を介して受光素子32を有する半導
体イメージセンサ素子31を、フェイスダウンで、その
素子上に形成された取り出し電極35が上記回路導体層
34に当接するように実装することによりイメージセン
サを作成していた。
2. Description of the Related Art Conventionally, in order to mount a semiconductor element such as an image sensor on a bare chip, a light-curable insulating resin is applied to a light-transmitting substrate 30 such as a film having a circuit conductor layer 34 formed on the surface in FIG. An image sensor is produced by mounting a semiconductor image sensor element 31 having a light receiving element 32 through a face 33 such that an extraction electrode 35 formed on the element comes into contact with the circuit conductor layer 34 face down. I was

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、種々の環境下での試験で当接していた電
極の接触抵抗が異常に高くなることがしばしば生じてい
た。これは、当接する電極の間には接着する樹脂が存在
しないため透光性基板がフィルムなどの熱膨張係数が半
導体イメージセンサ素子と著しく異なる基板では電極間
の圧接力が維持できないことによる。
However, with the above-described configuration, the contact resistance of the electrode that has come into contact in tests under various environments often becomes abnormally high. This is because there is no resin to be bonded between the abutting electrodes, and the light-transmitting substrate, such as a film, having a significantly different coefficient of thermal expansion from the semiconductor image sensor element cannot maintain the pressure contact force between the electrodes.

【0004】[0004]

【課題を解決するための手段】本発明のイメージセンサ
の製造方法は透光性基板表面上に形成された回路導体層
と、受光素子を有する半導体イメージセンサ素子表面に
形成された電極とを、透光性光硬化型絶縁樹脂を用いて
実装するイメージセンサの製造方法において、上記透光
性基板表面上に形成された回路導体層上に導電性接着剤
を塗布する工程と、上記導電性接着剤を仮固化する工程
と、上記透光性基板面に上記透光性光硬化型絶縁樹脂を
塗布する工程と、上記半導体イメージセンサ素子表面に
形成された電極と導電性接着剤が塗布された回路導体層
とを圧接する工程と、上記透光性光硬化型絶縁樹脂を硬
化する工程と、導電性接着剤を加熱により本硬化する工
程を有する。
According to a method of manufacturing an image sensor of the present invention, a circuit conductor layer formed on a surface of a light-transmitting substrate and an electrode formed on a surface of a semiconductor image sensor element having a light receiving element are provided. In a method of manufacturing an image sensor to be mounted using a light-transmitting light-curable insulating resin, a step of applying a conductive adhesive on a circuit conductor layer formed on the surface of the light-transmitting substrate; A step of temporarily solidifying an agent; a step of applying the translucent photocurable insulating resin to the translucent substrate surface; and an electrode and a conductive adhesive formed on the semiconductor image sensor element surface are applied. The method includes a step of pressure-contacting the circuit conductor layer, a step of curing the light-transmitting light-curable insulating resin, and a step of fully curing the conductive adhesive by heating.

【0005】また、透光性基板表面上に形成された回路
導体層と、受光素子を有する半導体イメージセンサ素子
の表面に形成された電極とを、透光性光硬化型絶縁樹脂
を用いて実装するイメージセンサの製造方法において、
上記透光性基板表面上に形成された回路導体層上に半田
層を形成する工程と、上記透光性基板面に上記透光性光
硬化型絶縁樹脂を塗布する工程と上記半導体イメージセ
ンサ素子表面に形成された電極と上記半田層が形成され
た回路導体層とを圧接しながら上記透光性光硬化型絶縁
樹脂を硬化する工程と、上記半田層を加熱によって溶融
する工程を有する。
Further, a circuit conductor layer formed on the surface of the light-transmitting substrate and an electrode formed on the surface of the semiconductor image sensor element having the light-receiving element are mounted using a light-transmitting light-curing insulating resin. In the method of manufacturing an image sensor,
A step of forming a solder layer on a circuit conductor layer formed on the surface of the light-transmitting substrate, a step of applying the light-transmitting light-curable insulating resin on the surface of the light-transmitting substrate, and the semiconductor image sensor element A step of curing the translucent photo-curable insulating resin while pressing the electrode formed on the surface and the circuit conductor layer on which the solder layer is formed; and a step of melting the solder layer by heating.

【0006】[0006]

【作用】本発明は上記した工程によって、光硬化型絶縁
樹脂によって硬化することにより優れた実装精度を維持
した状態で、さらに半導体イメージセンサ素子上に形成
された電極と透光性基板上の回路導体層との電気的な接
合性を向上し、半導体装置の信頼性を向上させる製造方
法を提供するものである。
According to the present invention, an electrode formed on a semiconductor image sensor element and a circuit on a light-transmitting substrate are maintained while maintaining excellent mounting accuracy by being cured by a photocurable insulating resin by the above-described process. It is an object of the present invention to provide a manufacturing method for improving the electrical bonding with a conductor layer and improving the reliability of a semiconductor device.

【0007】[0007]

【実施例】以下本発明の実施例をイメージセンサの例に
ついて、図面を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described below with reference to the drawings by taking an example of an image sensor.

【0008】図1(a)、(b)は本発明の第1の実施
例におけるイメージセンサの断面図と工程略図を示すも
のである。11は透光性基板、12は透光性基板11の
表面上に形成された回路導体層、13は半導体素子とし
て用いたイメージセンサ素子、14はイメージセンサ素
子13に設けられている電極、15は半導体イメージセ
ンサ素子13を、透光性基板11へ実装するための透明
光硬化型絶縁樹脂、16は導電性接着剤、17は半導体
イメージセンサ素子13に設けられている受光素子であ
る。
FIGS. 1A and 1B are a cross-sectional view and a schematic process diagram of an image sensor according to a first embodiment of the present invention. 11 is a light-transmitting substrate, 12 is a circuit conductor layer formed on the surface of the light-transmitting substrate 11, 13 is an image sensor element used as a semiconductor element, 14 is an electrode provided on the image sensor element 13, 15 Is a transparent light-curable insulating resin for mounting the semiconductor image sensor element 13 on the translucent substrate 11, 16 is a conductive adhesive, and 17 is a light receiving element provided in the semiconductor image sensor element 13.

【0009】以上のように構成されたイメージセンサの
製造方法について説明する。まず半導体プロセスを用い
て単結晶シリコン基板(ウエハ)上に、フォトトランジ
スタまたはフォトダイオード等の受光素子17とCCD
やMOS、バイポーラIC等のアクセス回路(図示せ
ず)を設けたものを作る。各電極14については、Au
ワイヤボンダのプロセスを用いて形成した、20〜50
μm程度ウエハ表面より突出したバンプ構造になってい
る。その後このウエハを高精度ダイシング技術により切
断し、半導体イメージセンサ素子13を作る。次に膜厚
が〜50μm程度のポリアリレート(PA)、ポリエー
テルサルフォン(PES)またはポリエチレンテレフタ
レート(PET)等の透光性基板11上に、銅等の金属
を、蒸着法やスパッタリング法、または箔等を用いて形
成し、後にフォトリソ法によって回路導体層12を形成
する。この回路導体層12と電極14とが当接する位置
に導電性接着剤16をスクリーン印刷法等によって3〜
20μm程度の厚さに島状に塗布し、導電性接着剤16
が完全に硬化しない温度に昇温して仮固化(硬化)す
る。次にこのような透光性基板11の所定に位置に、ア
クリレート系の透明光硬化型絶縁樹脂15をスタンピン
グ法やスクリーン印刷法等で所定量塗布し、その上に半
導体イメージセンサ素子13を電極14が所定の回路導
体層12に導電性接着剤の上から当接するようにフェイ
スダウンで配置する。その後、この半導体イメージセン
サ素子13の上方から圧力を加えながら、透明光硬化型
絶縁樹脂15に透光性基板11を通して紫外線照射を
し、硬化させる。この時、電極14と回路導体層12は
直接接触することが望ましいが、導電性接着剤16を介
しているため必ずしも必要ではない。次に導電性接着剤
16が完全に硬化する温度に昇温し実装を完了する。
A method for manufacturing the image sensor having the above-described configuration will be described. First, a light receiving element 17 such as a phototransistor or a photodiode is mounted on a single crystal silicon substrate (wafer) using a semiconductor process.
And an access circuit (not shown) such as a MOS, a bipolar IC or the like is provided. For each electrode 14, Au
20 to 50 formed using a wire bonder process
The bump structure protrudes from the wafer surface by about μm. Thereafter, the wafer is cut by a high-precision dicing technique to produce a semiconductor image sensor element 13. Next, a metal such as copper is deposited on a light-transmitting substrate 11 such as polyarylate (PA), polyethersulfone (PES), or polyethylene terephthalate (PET) having a thickness of about 50 μm by vapor deposition or sputtering. Alternatively, the circuit conductor layer 12 is formed using a foil or the like, and the circuit conductor layer 12 is formed later by a photolithography method. The conductive adhesive 16 is applied to the position where the circuit conductor layer 12 and the electrode 14 are in contact with each other by a screen printing method or the like.
The conductive adhesive 16 is applied in an island shape to a thickness of about 20 μm.
Is preliminarily solidified (cured) by raising the temperature to a temperature at which it is not completely cured. Next, a predetermined amount of an acrylate-based transparent photocurable insulating resin 15 is applied to a predetermined position of such a light-transmitting substrate 11 by a stamping method, a screen printing method, or the like, and the semiconductor image sensor element 13 is placed thereon. 14 is arranged face down so as to abut on the predetermined circuit conductor layer 12 from above the conductive adhesive. Thereafter, while applying pressure from above the semiconductor image sensor element 13, the transparent photocurable insulating resin 15 is irradiated with ultraviolet rays through the translucent substrate 11 to be cured. At this time, it is desirable that the electrode 14 and the circuit conductor layer 12 are in direct contact with each other, but this is not always necessary because the conductive adhesive 16 is interposed therebetween. Next, the temperature is raised to a temperature at which the conductive adhesive 16 is completely cured, and the mounting is completed.

【0010】この時、透明光硬化型絶縁樹脂15は光熱
硬化型絶縁樹脂を用いると耐熱性にも優れ、導体層に遮
光されて未硬化の部分も硬化するため更に信頼性が向上
する。
At this time, if the photo-curable insulating resin 15 is made of a photo-thermo-setting insulating resin, the heat resistance is excellent, and the uncured portion is cured by being shielded from light by the conductive layer, so that the reliability is further improved.

【0011】このイメージセンサについては、透光性基
板11及び透明光硬化型絶縁樹脂15を通して光情報を
受光素子17が検知し、これを電気信号に変換するよう
になっている。このセンサを用いて、透光性基板に直接
原稿を接触させることによって完全密着型イメージセン
サを形成することができる。
In this image sensor, light information is detected by a light receiving element 17 through a light transmitting substrate 11 and a transparent light curing type insulating resin 15 and is converted into an electric signal. Using this sensor, a perfect contact image sensor can be formed by directly contacting the original with the translucent substrate.

【0012】透明光硬化型絶縁樹脂15としては、ウレ
タンアクリレート系、あるいはエポキシアクリレート系
の紫外線硬化樹脂が接着性、光感度の点から好適であ
る。
As the transparent photocurable insulating resin 15, a urethane acrylate or epoxy acrylate ultraviolet curable resin is preferable from the viewpoint of adhesiveness and photosensitivity.

【0013】図1の構成のイメージセンサを作成する際
に、透光性基板11にポリアリレートフィルムを用い、
またその上に透明接着剤を用いて銅箔を貼り、フォトリ
ソ法により銅箔を加工し回路導体層とした。
When an image sensor having the structure shown in FIG. 1 is manufactured, a polyarylate film is used for the light-transmitting substrate 11,
Further, a copper foil was adhered thereon using a transparent adhesive, and the copper foil was processed by a photolithography method to obtain a circuit conductor layer.

【0014】このポリアリレートフィルムの表面に0.
2μm〜2.0μmの凹凸を設けることにより透明光硬
化型絶縁樹脂15との接着性を向上させ、高温高湿(8
5℃、85%)、高温(85℃)、低温(−40℃)及
び熱衝撃(−40℃〜+85℃)等の種々の試験に耐え
ることを可能にし、イメージセンサとしての信頼性を飛
躍的に向上させ、実用化を可能にした。
On the surface of the polyarylate film, 0.1%
By providing irregularities of 2 μm to 2.0 μm, the adhesiveness to the transparent photocurable insulating resin 15 is improved, and high temperature and high humidity (8
5 ° C, 85%), high temperature (85 ° C), low temperature (-40 ° C), and various kinds of tests such as thermal shock (-40 ° C to + 85 ° C) are possible, and the reliability as an image sensor is increased. And improved practical use.

【0015】本発明第2の実施例の製造方法として半田
層を用いた例について説明する。上記の実施例と同様に
図2(a)、(b)のイメージセンサを例に製造方法に
ついて説明する。
An example using a solder layer as a manufacturing method of the second embodiment of the present invention will be described. Similar to the above embodiment, the manufacturing method will be described by taking the image sensor of FIGS. 2A and 2B as an example.

【0016】まず同様に半導体プロセスを用いて単結晶
シリコン基板(ウエハ)上に、フォトトランジスタの受
光素子27とバイポーラIC等のアクセス回路(図示せ
ず)を設けたものを作る。各電極24については、Au
ワイヤボンダのプロセスを用いて形成した、20〜50
μm程度ウエハ表面より突出したバンプ構造になってい
る。その後このウエハを高精度ダイシング技術により切
断し、半導体イメージセンサ素子23を作る。次にポリ
エーテルサルフォン(PES)またはポリエーテルエー
テルケトン(PEEK)等の透光性基板21上に、銅等
の金属を、蒸着法やスパッタリング法等を用いて形成
し、後にフォトリソ法によって回路導体層22を形成す
る。この回路導体層22と電極24とが当接する位置に
低温溶融半田層26をメッキ法等によって3〜20μm
程度の厚さに形成する。次にこのような透光性基板21
の所定に位置に、アクリレート系の光・熱硬化型無溶剤
の絶縁性接着剤として透明光硬化型絶縁樹脂25をスタ
ンピング法やスクリーン印刷法等で所定量塗布し、その
上に半導体イメージセンサ素子23を電極24が所定の
回路導体層22に低温溶融半田層26の上から当接する
ようにフェイスダウンで配置する。その後、この半導体
イメージセンサ素子23の上方から圧力を加えながら、
光熱硬化型絶縁性接着剤25を光照射によって硬化させ
る。この後150℃まで昇温し低温溶融半田層26を溶
融させ回路導体層と電極24とを半田づけする。
First, a semiconductor light-receiving element 27 and an access circuit (not shown) such as a bipolar IC are provided on a single-crystal silicon substrate (wafer) using a semiconductor process. For each electrode 24, Au
20 to 50 formed using a wire bonder process
The bump structure protrudes from the wafer surface by about μm. Thereafter, the wafer is cut by a high-precision dicing technique, and the semiconductor image sensor element 23 is manufactured. Next, a metal such as copper is formed on a translucent substrate 21 such as polyethersulfone (PES) or polyetheretherketone (PEEK) by an evaporation method, a sputtering method, or the like, and a circuit is formed by a photolithography method later. The conductor layer 22 is formed. At a position where the circuit conductor layer 22 and the electrode 24 are in contact with each other, a low-temperature melting solder layer 26 is formed by plating to a thickness of 3 to 20 μm.
It is formed to a thickness of about. Next, such a translucent substrate 21
A predetermined amount of a transparent photo-curable insulating resin 25 is applied as a acrylate-based photo-thermo-curable non-solvent insulating adhesive by a stamping method, a screen printing method, or the like, and a semiconductor image sensor element is formed thereon. 23 is arranged face-down such that the electrode 24 contacts the predetermined circuit conductor layer 22 from above the low-temperature melting solder layer 26. Thereafter, while applying pressure from above the semiconductor image sensor element 23,
The photothermosetting insulating adhesive 25 is cured by light irradiation. Thereafter, the temperature is raised to 150 ° C. to melt the low-temperature molten solder layer 26 and solder the circuit conductor layer and the electrode 24.

【0017】このようにして得られたイメージセンサ
は、高温高湿(60℃、90%)、高温(70℃)、低
温(−30℃)及び熱衝撃(−30℃〜+70℃)等の
種々の試験に耐えることを可能にし、イメージセンサと
しての信頼性を向上させ、実用化を可能にした。
The image sensor thus obtained has a high temperature and high humidity (60 ° C., 90%), a high temperature (70 ° C.), a low temperature (−30 ° C.), a thermal shock (−30 ° C. to + 70 ° C.), and the like. It made it possible to withstand various tests, improved the reliability as an image sensor, and made it practical.

【0018】また、光硬化によって半導体イメージセン
サ素子23を固定するため高い位置精度で実装でき、加
熱による位置づれ等もなく高密度なイメージセンサにも
適応できる。
Further, since the semiconductor image sensor element 23 is fixed by light curing, the semiconductor image sensor element 23 can be mounted with high positional accuracy, and can be applied to a high-density image sensor without displacement due to heating.

【0019】[0019]

【発明の効果】以上のように本発明の製造方法によれ
ば、半導体イメージセンサ素子をいわゆるフェイスダウ
ンで、回路導体層を設けた透光性基板に、高信頼性で、
高精度に実装することができることから、Si結晶を用
いた完全密着型イメージセンサを実現することができ、
安価で高信頼性を有するイメージセンサを提供すること
ができ、また、高密度なイメージセンサにも容易に適応
できる。
As described above, according to the manufacturing method of the present invention, a semiconductor image sensor device is mounted on a light-transmitting substrate provided with a circuit conductor layer in a so-called face-down manner with high reliability.
Since it can be mounted with high accuracy, it is possible to realize a complete contact type image sensor using Si crystal,
An inexpensive and highly reliable image sensor can be provided, and it can be easily adapted to a high-density image sensor.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明の第1の実施例における製造方
法により製造されたイメージセンサの断面図 (b)は本発明の第1の実施例における製造工程略図
FIG. 1A is a cross-sectional view of an image sensor manufactured by a manufacturing method according to a first embodiment of the present invention. FIG. 1B is a schematic view of a manufacturing process according to the first embodiment of the present invention.

【図2】(a)は本発明の第2の実施例における製造方
法により製造されたイメージセンサの断面図 (b)は本発明の第2の実施例における製造工程略図
2A is a cross-sectional view of an image sensor manufactured by a manufacturing method according to a second embodiment of the present invention; FIG. 2B is a schematic view of a manufacturing process according to the second embodiment of the present invention;

【図3】従来のイメージセンサの断面図FIG. 3 is a cross-sectional view of a conventional image sensor.

【符号の説明】[Explanation of symbols]

11 透光性基板 12 回路導体層 13 半導体イメージセンサ素子 14 電極 15 透明光硬化型絶縁樹脂 16 導電性接着剤 17 受光素子 21 透光性基板 22 回路導体層 23 半導体イメージセンサ素子 24 電極 25 透明光硬化型絶縁樹脂 26 低温溶融半田層 27 受光素子 DESCRIPTION OF SYMBOLS 11 Translucent board 12 Circuit conductor layer 13 Semiconductor image sensor element 14 Electrode 15 Transparent photocurable insulating resin 16 Conductive adhesive 17 Light receiving element 21 Translucent substrate 22 Circuit conductor layer 23 Semiconductor image sensor element 24 Electrode 25 Transparent light Curable insulating resin 26 Low temperature melting solder layer 27 Light receiving element

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】透光性基板表面上に形成された回路導体層
と、受光素子を有する半導体イメージセンサ素子表面に
形成された電極とを、透光性光硬化型絶縁樹脂を用いて
実装するイメージセンサの製造方法において、上記透光
性基板表面上に形成された回路導体層上に導電性接着剤
を塗布する工程と、上記導電性接着剤を仮固化する工程
と、上記透光性基板面に上記透光性光硬化型絶縁樹脂を
塗布する工程と、上記半導体イメージセンサ素子表面に
形成された電極と導電性接着剤が塗布された回路導体層
とを圧接する工程と、上記透光性光硬化型絶縁樹脂を硬
化する工程と、導電性接着剤を加熱により本硬化する工
程を有するイメージセンサの製造方法。
1. A circuit conductor layer formed on a surface of a light-transmitting substrate and electrodes formed on a surface of a semiconductor image sensor element having a light-receiving element are mounted using a light-transmitting light-curing insulating resin. In the method for manufacturing an image sensor, a step of applying a conductive adhesive on a circuit conductor layer formed on the surface of the light-transmitting substrate; a step of temporarily solidifying the conductive adhesive; Applying the translucent photo-curable insulating resin to a surface; pressing an electrode formed on the surface of the semiconductor image sensor element with a circuit conductor layer to which a conductive adhesive is applied; A method for manufacturing an image sensor, comprising: a step of curing a conductive photocurable insulating resin; and a step of fully curing a conductive adhesive by heating.
【請求項2】透光性基板表面上に形成された回路導体層
と、受光素子を有する半導体イメージセンサ素子の表面
に形成された電極とを、透光性光硬化型絶縁樹脂を用い
て実装するイメージセンサの製造方法において、上記透
光性基板表面上に形成された回路導体層上に半田層を形
成する工程と、上記透光性基板面に上記透光性光硬化型
絶縁樹脂を塗布する工程と上記半導体イメージセンサ素
子表面に形成された電極と上記半田層が形成された回路
導体層とを圧接しながら上記透光性光硬化型絶縁樹脂を
硬化する工程と、上記半田層を加熱によって溶融する工
程を有するイメージセンサの製造方法。
2. A circuit conductor layer formed on a surface of a light-transmitting substrate and an electrode formed on a surface of a semiconductor image sensor element having a light-receiving element are mounted using a light-transmitting light-curing insulating resin. Forming a solder layer on a circuit conductor layer formed on the light-transmitting substrate surface, and applying the light-transmitting light-curable insulating resin to the light-transmitting substrate surface. Curing the translucent light-curable insulating resin while pressing the electrode formed on the surface of the semiconductor image sensor element and the circuit conductor layer on which the solder layer is formed, and heating the solder layer. A method for manufacturing an image sensor, comprising:
JP3193131A 1991-08-01 1991-08-01 Image sensor manufacturing method Expired - Lifetime JP2574559B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3193131A JP2574559B2 (en) 1991-08-01 1991-08-01 Image sensor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3193131A JP2574559B2 (en) 1991-08-01 1991-08-01 Image sensor manufacturing method

Publications (2)

Publication Number Publication Date
JPH0536960A JPH0536960A (en) 1993-02-12
JP2574559B2 true JP2574559B2 (en) 1997-01-22

Family

ID=16302790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3193131A Expired - Lifetime JP2574559B2 (en) 1991-08-01 1991-08-01 Image sensor manufacturing method

Country Status (1)

Country Link
JP (1) JP2574559B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2975501B2 (en) * 1993-05-17 1999-11-10 京セラ株式会社 Imaging device
JP4647851B2 (en) * 2001-08-07 2011-03-09 日立マクセル株式会社 The camera module
JP4492148B2 (en) * 2004-02-18 2010-06-30 日立化成工業株式会社 Circuit connection method
KR101427690B1 (en) * 2008-01-07 2014-08-07 세메스 주식회사 Template for forming solder bumps and method of aligning wafer using the same

Also Published As

Publication number Publication date
JPH0536960A (en) 1993-02-12

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