JP2022091911A - Electro-optical device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device and an electronic apparatus that can prevent an operation trouble such as display unevenness.

SOLUTION: An electro-optical device comprises: scan lines and first constant potential lines that are arranged along a first direction; data lines and second constant potential lines that are arranged along a second direction intersecting with the first direction; storage capacitances that each include a first electrode having a projection projecting in a direction along the first direction; and connection parts that each electrically connect the first constant potential line and a projection projecting in a direction along the first direction of the second constant potential line. The connection part is electrically connected with the projection of the first electrode.

SELECTED DRAWING: Figure 4

COPYRIGHT: (C)2022,JPO&INPIT

Description

The present invention relates to electro-optic devices and electronic devices.

For example, an electro-optic device such as a liquid crystal display used as a light bulb of a projector is known. The liquid crystal display described in Patent Document 1 includes a scanning line, a data line, a pixel electrode provided for each of a plurality of pixels, and a thin film. Further, such a liquid crystal display includes a shield layer for data lines and a shield layer for scanning lines in order to prevent fluctuations in the potential of the drain electrode and secure a holding capacity.

Japanese Unexamined Patent Publication No. 2018-40969

However, in the conventional liquid crystal display, the potentials of the two shield layers fluctuate individually due to the influence of scanning lines or data lines, and as a result, the potential difference between these shield layers fluctuates for each pixel. Therefore, there is a problem that the holding capacity changes for each pixel, and as a result, operational problems such as display unevenness may occur.

One aspect of the electro-optical device of the present invention is a scanning line and a first constant potential line arranged along a first direction, a data line arranged along a second direction intersecting the first direction, and a first. Two constant potential lines, a storage capacity including a first electrode having a protrusion protruding in a direction along the first direction, and a direction along the first direction of the first constant potential line and the second constant potential line. A connecting portion for electrically connecting the protruding portion to the protruding portion thereof is provided, and the connecting portion is electrically connected to the protruding portion of the first electrode.

It is a top view of the electro-optics device which concerns on this embodiment. It is sectional drawing of the electro-optics device which concerns on this embodiment. It is an equivalent circuit diagram which shows the electric structure of the element substrate in this embodiment. It is an exploded perspective view which shows a part of various wirings which a pixel circuit part has in this embodiment. It is a top view which shows a part of the pixel circuit part and the pixel electrode in this embodiment. It is sectional drawing which shows a part of the element substrate in this embodiment schematically. It is sectional drawing which shows the part of the element substrate in the 1st modification schematically. It is sectional drawing which shows the part of the element substrate in the 2nd modification schematically. It is a perspective view which shows the personal computer which is an example of an electronic device. It is a perspective view which shows the smartphone which is an example of an electronic device. It is a schematic diagram which shows the projector which is an example of an electronic device.

Hereinafter, preferred embodiments according to the present invention will be described with reference to the accompanying drawings. In the drawings, the dimensions and scale of each part are appropriately different from the actual ones, and some parts are schematically shown for easy understanding. Further, the scope of the present invention is not limited to these forms unless it is stated in the following description that the present invention is particularly limited.

1. 1. Electro-optic device As an example of the electro-optic device of the present invention, an active matrix type liquid crystal device will be described as an example.

1-1. Basic Configuration FIG. 1 is a plan view of the electro-optic device 100 according to the present embodiment. FIG. 2 is a cross-sectional view of the electro-optic device 100 according to the present embodiment, and is a cross-sectional view taken along the line AA in FIG. In the following, for convenience of explanation, the x-axis, y-axis, and z-axis shown in FIGS. 1 and 2, which are orthogonal to each other, will be described as appropriate. In the following, the tip side of the arrow indicating the direction of each axis is referred to as "+ side", and the base end side is referred to as "-side". Of the x-axis, the direction pointed by the arrow is the + x direction, and the opposite direction is the −x direction. The same applies to the y-axis and the z-axis. In the present embodiment, the "first direction" is the + y direction, and the "second direction" intersecting the "first direction" is the −x direction. Further, the "third direction" in which the first substrate 21 and the pixel electrode 28, which will be described later, overlap each other is the −z direction. Also, viewing from the -z direction is simply called "planar view".

The electro-optic device 100 shown in FIGS. 1 and 2 is a transmissive liquid crystal device. As shown in FIG. 2, the electro-optical device 100 includes a translucent element substrate 2, a translucent facing substrate 4, a frame-shaped sealing member 8, and a liquid crystal layer 9. The seal member 8 is arranged between the element substrate 2 and the facing substrate 4. The liquid crystal layer 9 is arranged in a region surrounded by the element substrate 2, the facing substrate 4, and the sealing member 8. Here, the direction in which the facing substrate 4, the liquid crystal layer 9, and the element substrate 2 are arranged is the −z direction, and the surface of the element substrate 2 is parallel to the xy plane.

With respect to the electro-optic device 100, light may be incident from the element substrate 2 and transmitted through the liquid crystal layer 9 and emitted from the opposed substrate 4, or incident from the opposed substrate 4 and transmitted through the liquid crystal layer 9. It may be emitted from the element substrate 2. Further, the light transmitted through the electro-optical device 100 is visible light. As used herein, the term "translucency" means transparency to visible light, and preferably means that the transmittance of visible light is 50% or more. Further, as shown in FIG. 1, the electro-optic device 100 has a square shape in a plan view, but the plan view shape of the electro-optic device 100 is not limited to this, and may be, for example, a circle.

As shown in FIG. 1, the element substrate 2 has a size including the facing substrate 4 in a plan view. As shown in FIG. 2, the element substrate 2 has a first substrate 21 as a “substrate”, a pixel circuit unit 20, a plurality of pixel electrodes 28, and a first alignment film 29. The first substrate 21, the pixel circuit unit 20, the plurality of pixel electrodes 28, and the first alignment film 29 are arranged in this order. The first alignment film 29 is located closest to the liquid crystal layer 9. The first substrate 21 is composed of a flat plate having translucency and insulating properties. The first substrate 21 is made of, for example, glass or quartz. The pixel circuit unit 20 has various wirings. The pixel electrode 28 has translucency and is made of a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The first alignment film 29 orients the liquid crystal molecules of the liquid crystal layer 9. Examples of the constituent material of the first alignment film 29 include polyimide and silicon oxide. The pixel circuit unit 20 will be described in detail later.

As shown in FIG. 2, the facing substrate 4 has a second substrate 41, a light-transmitting layer 42, a facing electrode 45, and a second alignment film 46. The second substrate 41, the translucent layer 42, the counter electrode 45, and the second alignment film 46 are arranged in this order. The second alignment film 46 is located closest to the liquid crystal layer 9. The second substrate 41 is composed of a flat plate having translucency and insulating properties. The second substrate 41 is made of, for example, glass or quartz. The translucent layer 42 is formed of a silicon-based inorganic material having translucency and insulating properties such as silicon oxide. The counter electrode 45 is made of a transparent conductive material such as ITO or IZO. The second alignment film 46 orients the liquid crystal molecules of the liquid crystal layer 9. Examples of the constituent material of the second alignment film 46 include polyimide and silicon oxide.

The sealing member 8 is formed by using an adhesive or the like containing various curable resins such as an epoxy resin. The seal member 8 is fixed to each of the element substrate 2 and the facing substrate 4. As shown in FIG. 1, a part of the sealing member 8 is formed with an injection port 81 for injecting a liquid crystal material containing liquid crystal molecules, and the injection port 81 is a seal formed by using various resin materials. It is sealed by the stopper 80.

The liquid crystal layer 9 shown in FIG. 2 contains liquid crystal molecules having positive or negative dielectric anisotropy. The liquid crystal layer 9 is sandwiched by the element substrate 2 and the facing substrate 4 so that the liquid crystal molecules are in contact with both the first alignment film 29 and the second alignment film 46. The orientation of the liquid crystal molecules of the liquid crystal layer 9 changes depending on the voltage applied to the liquid crystal layer 9. The liquid crystal layer 9 enables gradation display by modulating light according to an applied voltage.

Further, as shown in FIG. 1, a plurality of scanning line driving circuits 11 and a data line driving circuit 12 are arranged on the surface of the element substrate 2 on the facing substrate 4 side. Further, a plurality of external terminals 14 are arranged on the surface of the element substrate 2 on the opposite substrate 4 side. The routing wiring 15 routed from each of the scanning line driving circuit 11 and the data line driving circuit 12 is connected to the external terminal 14.

The electro-optic device 100 having such a configuration has a display area A10 for displaying an image or the like, and a peripheral area A20 surrounding the display area A10 in a plan view. A plurality of pixels P arranged in a matrix are provided in the display area A10. A scanning line drive circuit 11, a data line drive circuit 12, and the like are arranged in the peripheral region A20. In addition to the plurality of pixels P that contribute to the display, the display area A10 may include dummy pixels that are arranged so as to surround the plurality of pixels P and do not contribute to the display.

1-2. Electrical Configuration FIG. 3 is an equivalent circuit diagram showing the electrical configuration of the element substrate 2 in this embodiment. As shown in FIG. 3, the element substrate 2 is provided with n scanning lines 244, m data lines 246, and first constant potential lines 245 as n capacitance lines. n and m are integers of 2 or more, respectively.

The n scanning lines 244 extend in the + y direction and are arranged at equal intervals in the −x direction. The scan line 244 is electrically connected to the gate of the transistor 23. Further, the n scanning lines 244 are electrically connected to the scanning line drive circuit 11 shown in FIG. Scanning signals G1, G2, ..., And Gn are sequentially supplied to the n scanning lines 244 from the scanning line driving circuit 11.

The m data lines 246 shown in FIG. 3 extend in the −x direction and are arranged at equal intervals in the + y direction. The data line 246 is electrically connected to the source of the transistor 23. Further, the m data lines 246 are electrically connected to the data line drive circuit 12 shown in FIG. Image signals S1, S2, ..., And Sm are supplied in parallel to the m data lines 246 from the data line drive circuit 12 shown in FIG.

The n scanning lines 244 and m data lines 246 shown in FIG. 3 are insulated from each other and form a grid in a plan view. The area surrounded by the two adjacent scanning lines 244 and the two adjacent data lines 246 corresponds to the pixel P. One pixel P is provided with one pixel electrode 28. One transistor 23 is correspondingly provided in one pixel electrode 28. The pixel electrode 28 is electrically connected to the corresponding transistor 23. The transistor 23 switches and controls the corresponding pixel electrode 28. The transistor 23 is, for example, a TFT that functions as a switching element.

The n first constant potential lines 245 extend in the + y direction and are arranged at equal intervals in the −x direction. Further, the n first constant potential lines 245 are insulated from the plurality of data lines 246 and the plurality of scanning lines 244, and are formed so as to be separated from each other. A fixed potential such as a ground potential is applied to the first constant potential line 245. Further, between the first constant potential line 245 and the pixel electrode 28, a storage capacity 256 is arranged in parallel with the liquid crystal capacity in order to prevent leakage of electric charges held in the liquid crystal capacity. The storage capacity 256 is a capacity element for holding the potential of the pixel electrode 28 according to the supplied image signal Sm.

When the scanning signals G1, G2, ..., And Gn are sequentially activated and n scanning lines 244 are sequentially selected, the transistor 23 connected to the selected scanning lines 244 is turned on. Then, the image signals S1, S2, ..., And Sm having a size corresponding to the gradation to be displayed via the m data lines 246 are taken into the pixel P corresponding to the selected scanning line 244, and the pixels are captured. It is applied to the electrode 28. As a result, a voltage corresponding to the gradation to be displayed is applied to the liquid crystal capacity formed between the pixel electrode 28 and the facing electrode 45 included in the facing substrate 4 shown in FIG. 2, and the voltage is applied according to the applied voltage. The orientation of the liquid crystal molecules changes. Further, the applied voltage is held by the storage capacity 256. Light is modulated by such a change in the orientation of the liquid crystal molecules, and gradation display becomes possible.

1-3. Pixel circuit unit 20
FIG. 4 is an exploded perspective view showing a part of various wirings included in the pixel circuit unit 20 in the present embodiment. In FIG. 4, various wirings related to one pixel P are illustrated. As shown in FIG. 4, the pixel circuit unit 20 includes a light-shielding body 241, a transistor 23, a source wiring 242, a drain wiring 243, a scanning line 244, a first constant potential line 245, a storage capacity 256, a data line 246, and a connection wiring 247. And has a second constant line of force 248. The transistor 23, the scanning line 244, the first constant potential line 245, the storage capacity 256, the data line 246 and the second constant potential line 248 are arranged in this order from the light shield 241 toward the pixel electrode 28. Further, the light-shielding body 241, the transistor 23, the source wiring 242, the drain wiring 243, the storage capacity 256, and the connection wiring 247 are provided for each of the above-mentioned pixels P. That is, these are provided for each pixel electrode 28.

The scanning line 244, the first constant potential line 245, the data line 246, and the second constant potential line 248 are each arranged over the plurality of pixels P. Further, the first constant potential line 245 is arranged corresponding to the scanning line 244. Specifically, the first constant potential line 245 is arranged substantially parallel to the corresponding scanning line 244 and along the + y direction. The first constant potential line 245 overlaps with the corresponding scanning line 244 in plan view. The first constant potential line 245 functions as a shielded line with respect to the scanning line 244. Further, the second constant potential line 248 is arranged corresponding to the data line 246. Specifically, the second constant potential line 248 is arranged substantially parallel to the corresponding data line 246 and along the −x direction. The second constant potential line 248 overlaps with the corresponding data line 246 in plan view. The second constant potential line 248 functions as a shielded line with respect to the data line 246.

FIG. 5 is a plan view showing a part of the pixel circuit unit 20 and the pixel electrode 28 in the present embodiment. As shown in FIG. 5, the plurality of scanning lines 244 and the plurality of data lines 246 form a grid pattern in a plan view. Similarly, the plurality of first constant potential lines 245 and the plurality of second constant potential lines 248 form a grid pattern in a plan view.

The pixel electrode 28 overlaps a region surrounded by two adjacent scanning lines 244 and two adjacent data lines 246 in a plan view. One pixel electrode 28 is correspondingly provided with one transistor 23 and one storage capacity 256. The transistor 23 and the storage capacity 256 are arranged corresponding to the intersection position C1 between the scanning line 244 and the data line 246. Specifically, each part of the transistor 23 and the storage capacity 256 overlaps the intersection position C1. The intersection position C1 is a portion where the scanning line 244 and the data line 246 intersect in a plan view, and is a portion where these overlap each other.

Although not shown in FIG. 5, one light-shielding body 241, one source wiring 242, one drain wiring 243, and one connection wiring 247 are provided corresponding to one pixel electrode 28. Further, the light-shielding body 241 and the source wiring 242, the drain wiring 243 and the connection wiring 247 are arranged corresponding to the intersection position C1.

FIG. 6 is a cross-sectional view schematically showing a part of the element substrate 2 in the present embodiment. Note that FIG. 6 is a diagram focusing on one pixel P. In FIG. 6, the arrangement of various wirings is schematically shown for ease of understanding.

As shown in FIG. 6, the pixel circuit unit 20 is arranged between the first substrate 21 and the pixel electrode 28. The light-shielding body 241 included in the pixel circuit unit 20 is arranged on the first substrate 21. The light-shielding body 241 has light-shielding properties and conductivity. The light-shielding body 241 may be arranged in a recess provided in the first substrate 21. The recess is formed, for example, by the damascene method. Examples of the constituent material of the light-shielding body 241 include metals such as tungsten (W), titanium (Ti), chromium (Cr), iron (Fe) and aluminum (Al), metal nitrides and metal silicides. Be done. Among these, tungsten is preferable. Tungsten has excellent heat resistance among various metals, and its OD (Optical Density) value is unlikely to decrease even by heat treatment at the time of manufacture, for example. Therefore, since the light-shielding body 241 contains tungsten, the light-shielding body 241 can prevent light from being incident on the transistor 23 particularly effectively.

Various wirings included in the pixel circuit unit 20 are arranged in the translucent insulator 22 included in the pixel circuit unit 20. The insulator 22 is arranged on the first substrate 21 so as to cover the light-shielding body 241. The insulator 22 has insulating layers 221, 222, 223, 224, 225, 226, 227, 228 and 229. These layers are arranged in this order from the first substrate 21 toward the pixel electrode 28. Each of these layers is composed of a silicon oxide film formed by, for example, thermal oxidation or a CVD (chemical vapor deposition) method.

The semiconductor layer 231 of the transistor 23 is arranged between the insulating layer 221 and the insulating layer 222. A gate electrode 232 included in the transistor 23 is arranged between the insulating layer 222 and the insulating layer 223. A source wiring 242, a drain wiring 243, and a scanning line 244 are arranged between the insulating layer 223 and the insulating layer 224. A first constant potential line 245 is arranged between the insulating layer 224 and the insulating layer 225. A first capacity 25 of the storage capacity 256 is arranged between the insulating layer 225 and the insulating layer 226. A second capacity 26 of the storage capacity 256 is arranged between the insulating layer 226 and the insulating layer 227. A data line 246 is arranged between the insulating layer 227 and the insulating layer 228. A second constant potential line 248 and a connection wiring 247 are arranged between the insulating layer 228 and the insulating layer 229.

The transistor 23 has a semiconductor layer 231, a gate electrode 232, and a gate insulating film 233. The semiconductor layer 231 has a source region 231a, a drain region 231b, a channel region 231c, a first LDD (Lightly Doped Drain) region 231d, and a second LDD region 231e. The channel region 231c is located between the source region 231a and the drain region 231b. The first LDD region 231d is located between the channel region 231c and the source region 231a. The second LDD region 231e is located between the channel region 231c and the drain region 231b. The semiconductor layer 231 is formed, for example, by forming a film of polysilicon, and the region other than the channel region 231c is doped with an impurity that enhances conductivity. The impurity concentration in the first LDD region 231d and the second LDD region 231e is lower than the impurity concentration in the source region 231a and the drain region 231b. At least one of the first LDD region 231d and the second LDD region 231e, particularly the first LDD region 231d, may be omitted.

The gate electrode 232 overlaps the channel region 231c of the semiconductor layer 231 in a plan view. The gate electrode 232 is formed, for example, by doping polysilicon with an impurity that enhances conductivity. The gate electrode 232 may be formed by using a material having conductivity of a metal, a metal silicide, and a metal compound. Further, a gate insulating film 233 is interposed between the gate electrode 232 and the channel region 231c. The gate insulating film 233 is composed of, for example, silicon oxide formed by thermal oxidation or a CVD method.

The source region 231a of the transistor 23 is connected to the source wiring 242 via the contact portion 271 penetrating the insulating layer 222 and the insulating layer 223. The source wiring 242 is connected to the data line 246 via a contact portion 275 that penetrates the insulating layers 224, 225, 226 and 227. The drain region 231b is connected to the drain wiring 243 via a contact portion 272 that penetrates the insulating layers 222 and 223. The drain wiring 243 is connected to the second capacity 26 of the storage capacity 256 via the contact portion 276 that penetrates the insulating layers 224, 225 and 226. The gate electrode 232 is connected to the scanning line 244 via a contact portion 273 that penetrates the insulating layer 223. Further, the scanning line 244 is connected to the above-mentioned light-shielding body 241 via a contact portion 274 penetrating the insulating layers 221, 222 and 223. The light-shielding body 241 functions as a gate electrode together with the gate electrode 232 included in the transistor 23.

Further, the first constant potential line 245 includes a shield portion 270. The shield portion 270 functions as a shield that suppresses the leakage electric field from the scanning line 244 from affecting the transistor 23 and the drain wiring 243, and as a light-shielding portion of the semiconductor layer 231. Therefore, one end side of the shield portion 270 is connected to the first constant potential line 245, and the portion extending from the one end side penetrates the insulating layer 224 to an intermediate position in the thickness direction of the insulating layer 223. It is placed between. Further, the shield portion 270 is arranged at a position overlapping the second LDD region 231e in a plan view, and the extending portion passes between the first constant potential line 245 and the scanning line 244 and the drain wiring 243, and the extending portion thereof is a scanning line. The insulating layer 223 arranged between the 244 and the second LDD region 231e extends to an intermediate position in the thickness direction. Further, the shield portion 270 is electrically connected to the first constant potential line 245, and a fixed potential is supplied from the first constant potential line 245.

The storage capacity 256 has a first capacity 25 and a second capacity 26. The first capacitance 25 has a pair of electrodes 251 and 252 and a dielectric layer 253. The dielectric layer 253 is arranged between the electrode 251 and the electrode 252. The electrode 251 is arranged on the insulating layer 225. The electrode 251 is connected to the first constant potential line 245 via a contact portion 277 that penetrates the insulating layer 225. The electrode 252 is connected to the connection wiring 247 via a contact portion 279 that penetrates the insulating layers 226, 227, and 228. The connection wiring 247 is connected to the pixel electrode 28 via the contact portion 283 that penetrates the insulating layer 229.

On the other hand, the second capacity 26 has a portion that overlaps with the first capacity 25 in a plan view. The second capacitance 26 has a pair of electrodes 261 and 262 and a dielectric layer 263. The electrode 261 corresponds to the "second electrode". The electrode 262 corresponds to the "first electrode". The dielectric layer 263 corresponds to a "dielectric". The dielectric layer 263 is arranged between the electrode 261 and the electrode 262. The electrode 261 is arranged on the insulating layer 226. The electrode 261 is connected to the electrode 252 of the first capacitance 25 via the contact portion 278 that penetrates the insulating layer 226. The electrode 262 is connected to the first constant potential line 245 via a contact portion 281 that penetrates the insulating layers 225 and 226. Further, the electrode 262 is connected to the second constant potential line 248 via the contact portion 282 penetrating the insulating layers 227 and 228.

Here, the contact portion 281 and the contact portion 282 form a connection portion 280. The contact portion 281 is a “first connection portion” that connects the first constant potential line 245 and the electrode 262. The contact portion 282 is a "second connecting portion" that connects the second constant potential line 248 and the electrode 262. Further, a fixed potential such as a ground potential is applied to the second constant potential line 248 as in the case of the first constant potential line 245. The fixed potential supplied to the first constant potential line 245 and the fixed potential supplied to the second constant potential line 248 are the same potential.

Further, the connection wiring 247 described above is arranged in the same layer as the second constant potential line 248, and is arranged in a layer different from the data line 246. Since the data line 246 and the connection wiring 247 are not arranged in the same layer, the coupling between the adjacent wirings between them is suppressed.

Each configuration of the above-mentioned source wiring 242, drain wiring 243, scanning line 244, first constant potential line 245, data line 246, connection wiring 247, second constant potential line 248, electrode 251, electrode 252, electrode 261 and electrode 262. Examples of the material include tungsten, titanium, chromium, iron (and metals such as aluminum, metal nitrides and metal silicides. Specific examples thereof include electrodes 251 and 252, electrodes 261 and the like having a storage capacity of 256. Each of the electrodes 262 is composed of a titanium nitride film. For example, the source wiring 242, the drain wiring 243, the scanning line 244, the first constant potential line 245, the data line 246, the connection wiring 247, and the second constant potential line. Each of the 248 is composed of a laminate of a titanium nitride film, an aluminum film, and a titanium nitride film. By including the aluminum film, these wirings have lower resistance than the case where they are composed of only the titanium nitride film. Can be planned.

Examples of the constituent materials of the contact portions 271 to 283 include metals such as aluminum and tungsten. Further, for example, the contact portion 274 may be integrally configured with the scanning line 244. Like the contact portion 274, the other contact portions 271 to 273 and 275 to 283 may be integrally configured with the wiring or the like to be connected. Further, the shield portion 270 may also be integrally configured with the first constant potential line 245.

As described above, the electro-optical device 100 is a pixel circuit arranged between the first substrate 21, the pixel electrode 28 arranged on the first substrate 21, and the first substrate 21 and the pixel electrode 28. A unit 20 is provided. The pixel circuit unit 20 includes a scanning line 244 arranged along the + y direction, a data line 246 arranged along the −x direction, and a first constant potential line 245 arranged along the scanning line 244. A second constant potential line 248 arranged along the data line 246 and a transistor 23 arranged corresponding to the intersection position C1 between the scanning line 244 and the data line 246 are provided. Further, the pixel circuit unit 20 includes a connection unit 280 that electrically connects the first constant potential line 245 and the second constant potential line 248. Then, the connection portion 280 is arranged corresponding to the intersection position C1.

By having the connecting portion 280, the first constant potential line 245 and the second constant potential line 248 are connected for each pixel P. Since the first constant potential line 245 and the second constant potential line 248 are connected, each potential of the first constant potential line 245 and the second constant potential line 248 is affected by the scanning line 244 or the data line 246. However, the potential difference between the first constant potential line 245 and the second constant potential line 248 can be reduced. Further, since the connection is made for each pixel P, it is possible to suppress the potential difference between the first constant potential line 245 and the second constant potential line 248 from varying between the pixels P. Further, it is determined that the potential difference between the first constant potential line 245 and the second constant potential line 248 varies among the pixels P due to the influence of the time constants of the first constant potential line 245 and the second constant potential line 248. It can be suppressed. Since it is possible to suppress the variation in the potential difference between the first constant potential line 245 and the second constant potential line 248 between the pixels P, it is possible to suppress the change in the holding capacity in the storage capacity 256 for each pixel P. can. As a result, it is possible to suppress the occurrence of operational problems such as display unevenness of the electro-optic device 100. Therefore, even if the number of pixels P is increased and the size of the pixels P is reduced in order to enable high-definition display, it is possible to reduce operation problems such as display unevenness.

Further, as described above, the storage capacity 256 includes the electrode 262 as the "first electrode", the electrode 261 as the "second electrode" electrically connected to the drain region 231b, and the electrodes 262 and 261. A dielectric layer 263 as a "dielectric" arranged between the two. Further, the connection portion 280 is a "second connection portion" that connects the contact portion 281 as the "first connection portion" that connects the first constant potential line 245 and the electrode 262, and the second constant potential line 248 and the electrode 262. ”, And has a contact portion 282. Therefore, the first constant potential line 245 and the second constant potential line 248 are electrically connected to each other by the contact portion 281 and the contact portion 282 via the electrode 262. Therefore, the first constant potential line 245 and the second constant potential line 248 can each function as capacitance lines. Further, since the contact portion 281 and the contact portion 282 are connected via the electrode 262, the storage capacity is 256, the first constant potential line 245, the second constant potential line 248, and the contact, as compared with the case where the contact portion 281 and the contact portion 282 are connected via the electrode 262. The degree of freedom in the arrangement and dimensions of the portions 281 and the contact portions 282 can be increased.

Further, as described above, the storage capacity 256 is arranged in the insulating layers 225, 226 and 227, which are layers between the first constant potential line 245 and the second constant potential line 248. Therefore, for example, the first constant potential line 245 and the second constant potential line 248 with respect to the storage capacity 256 are compared with the case where the storage capacity 256 is not arranged between the first constant potential line 245 and the second constant potential line 248. It is possible to avoid complicated electrical connection with.

Further, as described above, the storage capacity 256 has a first capacity 25 and a second capacity 26. Therefore, the capacitance can be increased as compared with the case where the storage capacity 256 has only one capacity. Therefore, the voltage can be preferably maintained.

Further, the electrode 251 of the first capacitance 25 and the electrode 262 of the second capacitance 26 are electrically connected to the first constant potential line 245. Therefore, a fixed potential is supplied to the electrode 251 and the electrode 262. Then, between the electrode 251 and the electrode 262, an electrode 252 and an electrode 261 electrically connected to the drain region 231b are arranged. Therefore, it is possible to prevent the electrode 252 and the electrode 261 from being electrically interacted with by other wiring such as the data line 246. Therefore, it is possible to more effectively suppress the change in the holding capacity in the storage capacity 256. Further, by arranging the first capacity 25 and the second capacity 26 so that the electrode 252 and the electrode 261 are located between the electrode 251 and the electrode 262, the storage capacity 256 and the pixel electrode 28 are electrically connected to each other. The number of contacts to connect can be reduced. Similarly, the number of contacts for electrically connecting the storage capacity 256 and the drain region 231b can be reduced.

Further, as described above, the first constant potential line 245 and the second constant potential line 248 are electrically connected to each other via the electrode 262 of the second capacitance 26. Therefore, the arrangement and dimensions of the first constant potential line 245, the second constant potential line 248, the contact portion 281 and the contact portion 282 are larger than those in the case where they are electrically connected via the electrode 251 of the first capacitance 25. The degree of freedom can be increased.

Further, as described above, the second constant potential line 248 is arranged on the insulating layers 228 and 229, which are layers between the data line 246 and the pixel electrode 28. Therefore, it is possible to suppress electrical interaction such as coupling due to parasitic capacitance between the data line 246 and the pixel electrode 28. Therefore, it is possible to effectively suppress the fluctuation of the potential of the pixel electrode 28 due to the influence of the data line 246. Further, the first constant potential line 245 is arranged on the insulating layers 224 and 225, which are layers between the scanning line 244 and the storage capacity 256. Therefore, it is possible to suppress the fluctuation of the capacitance in the storage capacitance 256 due to the influence of the scanning line 244.

Further, the first constant potential line 245 overlaps with the scanning line 244 when viewed from the −z direction. Therefore, as compared with the case where the first constant potential line 245 does not overlap with the scanning line 244, it is possible to more effectively suppress the fluctuation of the potential of the pixel electrode 28 due to the influence of the scanning line 244. Further, the second constant potential line 248 overlaps with the data line 246 when viewed from the −z direction. Therefore, as compared with the case where the second constant potential line 248 does not overlap with the data line 246, it is possible to more effectively suppress the fluctuation of the capacitance in the storage capacity 256 due to the influence of the data line 246.

Further, as described above, the contact portion 274 may be formed integrally with the scanning line 244 as described above, but is preferably formed separately from the scanning line 244. In that case, the contact portion 274 is formed by digging a contact hole in the insulating layers 221, 222 and 223 and embedding tungsten or the like in the contact hole. That is, when the constituent material of the contact portion 274 is tungsten, it is preferable that the contact portion 274 is composed of a tungsten plug. By being composed of the tungsten plug, the thickness of the scanning line 244 can be reduced as compared with the case where the contact portion 274 is integrally formed with the scanning line 244. Therefore, since the thickness of the insulator 22 can be reduced, the optical characteristics of the element substrate 2 can be improved. The same applies to the other contact portions 271 to 273 and 275 to 281. Further, the above-mentioned light-shielding body 241 does not have to function as a gate electrode. In this case, the light-shielding body 241 may be made of an insulating material.

2. 2. Modification Examples Each of the above-exemplified forms can be variously transformed. Specific embodiments that can be applied to each of the above-mentioned embodiments are illustrated below. Two or more embodiments arbitrarily selected from the following examples can be appropriately merged to the extent that they do not contradict each other.

2-1. First Modification Example In the above-described embodiment, the connection portion 280 is composed of the contact portion 281 and the contact portion 282, but the configuration of the connection portion 280 is not limited to this. FIG. 7 is a cross-sectional view schematically showing a part of the element substrate 2A in the first modification. The pixel circuit unit 20A included in the element substrate 2A has a connection unit 280A. The connecting portion 280A directly connects the first constant potential line 245 and the second constant potential line 248. That is, the connecting portion 280A electrically connects the first constant potential line 245 and the second constant potential line 248 without passing through the electrode 262. According to such a configuration, it is possible to reduce the resistance of the first constant potential line 245 and the second constant potential line 248. Further, as shown in FIG. 7, the element substrate 2A includes a contact portion 284 that electrically connects the second constant potential line 248 and the electrode 262. By providing the contact portion 284, the second constant potential line 248 can be suitably used as a capacitance line.

2-2. 2nd Modification Example FIG. 8 is a cross-sectional view schematically showing a part of the element substrate 2B in the second modification. The pixel circuit unit 20B included in the element substrate 2B has a connection unit 280B. The connection portion 280B includes the contact portion 282B and the contact portion 277, and the contact portion 277 that electrically connects the first constant potential line 245 and the second constant potential line 248 includes the first constant potential line 245 and an electrode. It is electrically connected to 251. The contact portion 282B electrically connects the second constant potential line 248 and the electrode 251. In the example shown in FIG. 8, the contact portion 277 corresponds to the “first connection portion” that connects the first constant potential line 245 and the electrode 251. The contact portion 282B corresponds to a "second connection portion" that connects the second constant potential line 248 and the electrode 251. Further, the electrode 251 corresponds to the "first electrode", the electrode 252 corresponds to the "second electrode", and the "dielectric" corresponds to the dielectric layer 253.

2-3. Third Modification Example In the above-described embodiment, the connection portion 280 is provided in all the pixels P, but even if the connection portion 280 is provided only in some arbitrary pixels P among all the pixels P. good. However, since the connection portion 280 is provided in all the pixels P, display unevenness can be reduced particularly effectively.

2-4. Fourth Modification Example In the above-described embodiment, the first capacitance 25 and the second capacitance 26 are arranged in the layer between the first constant potential line 245 and the second constant potential line 248, but the first capacitance 25 and the second capacitance 26 are arranged. Each arrangement of the second capacity 26 is not limited to this, and is arbitrary. For example, the second capacitance 26 may be arranged in a layer between the second constant potential line 248 and the pixel electrode 28. Further, the storage capacity 256 has a first capacity 25 and a second capacity 26, but the storage capacity 256 may be composed of one capacity.

2-5. Fifth Modification Example In the above-described embodiment, the first constant potential line 245 and the second constant potential line 248 function as capacitive lines, respectively, but either or both of them may not function as capacitive lines. .. If neither of them functions as a capacitance line, it is necessary to use the capacitance line separately. Therefore, it is preferable that at least one of them functions as a capacitance line. Since at least one of them functions as a capacitance line, the thickness of the element substrate 2 can be reduced and the deterioration of the optical characteristics can be suppressed as compared with the case where the capacitance line is used separately.

2-6. Sixth Modification Example In the above-described embodiment, the first constant potential line 245 is arranged on the + z-axis side of the scanning line 244, but the first constant potential line 245 is arranged from the scanning line 244 due to the arrangement of various wirings and the like. May be arranged on the −z axis side. Similarly, in the above-described embodiment, the second constant potential line 248 is arranged on the + z-axis side of the data line 246, but the second constant potential line 248 is located on the data line 246 due to the arrangement of various wirings and the like. -It may be arranged on the z-axis side.

2-7. Seventh Modification Example In the above-described embodiment, the first constant potential line 245 does not have to overlap with the scanning line 244 in a plan view. Similarly, the second constant potential line 248 does not have to overlap the data line 246 in plan view.

2-8. Eighth Modification Example In the above-described embodiment, the case where the “transistor” is a TFT has been described as an example, but the “transistor” is not limited to this, and for example, a MOSFET (metal-oxide-semiconductor field-effect transistor). And so on.

3. 3. Electronic device The electro-optic device 100 can be used for various electronic devices.

FIG. 9 is a perspective view showing a personal computer 2000 which is an example of an electronic device. The personal computer 2000 has an electro-optic device 100 for displaying various images, and a main body 2010 in which a power switch 2001 and a keyboard 2002 are installed.

FIG. 10 is a perspective view showing a smartphone 3000, which is an example of an electronic device. The smartphone 3000 has an operation button 3001 and an electro-optic device 100 for displaying various images. The screen content displayed on the electro-optic device 100 is changed according to the operation of the operation button 3001.

FIG. 11 is a schematic diagram showing a projector which is an example of an electronic device. The projection type display device 4000 is, for example, a three-panel projector. The electro-optical device 1r is an electro-optical device 100 corresponding to a red display color, the electro-optical device 1g is an electro-optical device 100 corresponding to a green display color, and the electro-optical device 1b is a blue display color. The electro-optical device 100 corresponding to the above. That is, the projection type display device 4000 has three electro-optic devices 1r, 1g, and 1b corresponding to the display colors of red, green, and blue, respectively.

The illumination optical system 4001 supplies the red component r of the light emitted from the lighting device 4002 as a light source to the electro-optic device 1r, supplies the green component g to the electro-optic device 1g, and supplies the blue component b to the electro-optic device 1b. Supply to. Each electro-optical device 1r, 1g, 1b functions as an optical modulator such as a light valve that modulates each monochromatic light supplied from the illumination optical system 4001 according to a display image. The projection optical system 4003 synthesizes the emitted light from each electro-optic device 1r, 1g, and 1b and projects it onto the projection surface 4004.

The personal computer 2000, the smartphone 3000, and the projection type display device 4000 described above each include the electro-optic device 100 described above. Since the electro-optic device 100 is provided, the quality of each display in the personal computer 2000, the smartphone 3000 and the projection type display device 4000 can be improved.

Although the present invention has been described above based on the preferred embodiments, the present invention is not limited to the above-described embodiments. Further, the configuration of each part of the present invention can be replaced with an arbitrary configuration that exhibits the same function as that of the above-described embodiment, and any configuration can be added.

The electronic device to which the electro-optical device of the present invention is applied is not limited to the exemplified device, and is, for example, a PDA (Personal Digital Assistants), a digital still camera, a television, a video camera, a car navigation device, and an in-vehicle device. Examples include displays, electronic notebooks, electronic papers, calculators, word processors, workstations, videophones, and POS (Point of sale) terminals. Further, examples of the electronic device to which the present invention is applied include a printer, a scanner, a copying machine, a video player, a device provided with a touch panel, and the like.

Further, in the above description, the liquid crystal device has been described as an example of the electro-optic device of the present invention, but the electro-optic device of the present invention is not limited to this. For example, the electro-optic device of the present invention can also be applied to an image sensor or the like. Further, for example, the present invention can be applied to a display panel using a light emitting element such as an organic EL (electroluminescence), an inorganic EL, or a light emitting polymer, as in the above-described embodiment. Further, the present invention can be applied to an electrophoresis display panel using microcapsules containing a colored liquid and white particles dispersed in the liquid, as in the above-described embodiment.

2 ... element substrate, 4 ... opposed substrate, 8 ... seal member, 9 ... liquid crystal layer, 11 ... scanning line drive circuit, 12 ... data line drive circuit, 14 ... external terminal, 15 ... wiring, 20 ... pixel circuit unit, 21. ... 1st substrate, 22 ... Insulator, 23 ... Transistor, 25 ... 1st capacitance, 26 ... 2nd capacitance, 28 ... Pixel electrode, 29 ... 1st alignment film, 41 ... 2nd substrate, 42 ... Translucent layer, 45 ... counter electrode, 46 ... second alignment film, 80 ... encapsulant, 81 ... injection port, 100 ... electro-optical device, 221 ... insulating layer, 222 ... insulating layer, 223 ... insulating layer, 224 ... insulating layer, 225 ... Insulation layer, 226 ... Insulation layer, 227 ... Insulation layer, 228 ... Insulation layer, 229 ... Insulation layer, 231 ... Semiconductor layer, 231a ... Source region, 231b ... Drain region, 231c ... Channel region, 231d ... First LDD region, 231e ... 2nd LDD region, 232 ... Gate electrode, 233 ... Gate insulating film, 241 ... Shading body, 242 ... Source wiring, 243 ... Drain wiring, 244 ... Scanning line, 245 ... First constant potential line, 246 ... Data line, 247 ... Connection wiring, 248 ... Second constant potential line, 251 ... Electrode, 252 ... Electrode, 253 ... Dielectric layer, 256 ... Storage capacity, 261 ... Electrode, 262 ... Electrode, 263 ... Dielectric layer, 270 ... Shield , 271 ... contact part, 272 ... contact part, 273 ... contact part, 274 ... contact part, 275 ... contact part, 276 ... contact part, 277 ... contact part, 278 ... contact part, 279 ... contact part, 280 ... connection part. , 281 ... contact part, 282 ... contact part, 283 ... contact part, 284 ... contact part, 2000 ... personal computer, 2001 ... power switch, 2002 ... keyboard, 2010 ... main body part, 3000 ... smartphone, 3001 ... operation button, 4000 ... Projection type display device, 4001 ... Illumination optical system, 4002 ... Illumination device, 4003 ... Projection optical system, 4004 ... Projection surface, A10 ... Display area, A20 ... Peripheral area, C1 ... Intersection position, P ... Pixel.

Claims (6)

Scanning lines and first constant potential lines arranged along the first direction,
Data lines and second constant potential lines arranged along the second direction intersecting the first direction,
The storage capacity including the first electrode having a protrusion protruding in the direction along the first direction, and the storage capacity.
A connecting portion for electrically connecting the first constant potential line and the protruding portion of the second constant potential line protruding in the direction along the first direction is provided.
The connecting portion is an electro-optic device characterized in that it is electrically connected to the protruding portion of the first electrode. The storage capacity includes a second electrode overlapping the first electrode and a dielectric disposed between the first electrode and the second electrode.
The connection part is
A first connection portion connecting the first constant potential line and the first electrode,
The electro-optic device according to claim 1, further comprising a second connecting portion for connecting the second constant potential line and the first electrode. The electro-optic device according to claim 1, wherein the storage capacity is arranged in a layer between the first constant potential line and the second constant potential line. Equipped with pixel electrodes,
The electro-optical device according to claim 1, wherein the first constant potential line and the second constant potential line are respectively arranged in a layer between the scanning line and the pixel electrode. The first constant potential line is arranged in a layer between the scanning line and the storage capacity.
The electro-optic device according to claim 4, wherein the second constant potential line is arranged in a layer between the data line and the pixel electrode. An electronic device comprising the electro-optic device according to any one of claims 1 to 5.

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