JP2020152606A - Joined body and manufacturing method of joined body - Google Patents

Abstract

To provide a new joined body using a ceramic material excellent in processability.SOLUTION: A joined body includes a first component constituted of machinable ceramic, a second component constituted of a material selected from the group consisting of machinable ceramic, fine ceramic and a metallic material, and a joint layer for joining the first component and the second component.SELECTED DRAWING: Figure 1

Description

The present invention relates to a bonded body in which a plurality of parts are joined.

Conventionally, a bonding agent containing at least aluminum nitride ceramics and a flux is provided between a plurality of base materials made of aluminum nitride ceramics, and the bonding agent is heated in a temperature range equal to or higher than the melting point of the melt. A method for producing a bonded body of an aluminum nitride ceramic base material has been devised (see Patent Document 1).

Japanese Patent No. 3604888

However, the above-mentioned aluminum nitride ceramic base material is a fine ceramic that is difficult to process by cutting, and it is difficult to perform complicated processing after manufacturing the bonded body from the viewpoint of cutting speed and chipping (chip).

The present invention has been made in view of such a situation, and an object of the present invention is to provide a new bonded body using a ceramic material having excellent workability.

In order to solve the above problems, the bonded body of a certain aspect of the present invention is composed of a first component made of machinable ceramics and a material selected from the group consisting of machinable ceramics, fine ceramics and metal materials. It has a second component, and a bonding layer for joining the first component and the second component. The bonding layer is an insulating material including a ceramic material.

Machinable ceramics are easier to process than general fine ceramics. Therefore, according to this aspect, by forming at least one of the plurality of parts with machinable ceramics, even if a complicated shape is not realized at the stage of manufacturing the parts or the joint, the joint is manufactured. Since it can be processed, it is possible to manufacture ceramic parts having various shapes.

The machinable ceramic may be made of a material having a bending strength of 800 MPa or less, a Young's modulus of 250 GPa or less, and a Vickers hardness of 10 GPa or less. Machinable ceramics having such characteristics have a large grinding amount (processing rate) per unit time during processing, and even a wafer support having a complicated shape can be efficiently produced. Further, for example, a wafer support having a complicated shape can be manufactured by manufacturing a part as a block having a simple shape and then cutting the component into a desired shape.

Machinable ceramics may be a sintered body made of at least two or more materials that require boron nitride selected from the group consisting of boron nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon nitride and silicon carbide. Good. Boron nitride has excellent machinability, and the processing rate can be increased by using machinable ceramics containing boron nitride as an essential component. Further, in the case of a component containing a conductive member which is a different material inside, an internal stress is generated with respect to a temperature change depending on the difference in physical properties between the component and the conductive member. Alternatively, in the case of a structure, thermal stress is generated due to a partial temperature difference. For example, thermal stress is generated by the temperature difference between the outer peripheral portion and the central portion of the wafer support. However, since boron nitride has excellent thermal shock resistance, the parts are less likely to crack.

The machinable ceramics may contain 10 to 80% by mass of boron nitride when the total of the ceramic components of boron nitride, aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride is 100% by mass. The machinable ceramic may contain 20 to 90% by mass of at least one material selected from the group consisting of aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride.

As the bonding layer, a bonding agent containing at least two or more materials selected from the group consisting of rare earth oxides (for example, yttrium oxide or ytterbium oxide), aluminum oxide, magnesium oxide or silicon oxide may be used. As a result, sufficient bonding strength can be obtained for parts made of machinable ceramics.

The bonding agent may contain yttrium oxide in an amount of 25 to 65% by mass, at least one of aluminum oxide and magnesium oxide in an amount of 1 to 50% by mass, and silicon oxide in the balance. As a result, sufficient bonding strength can be obtained for parts made of machinable ceramics.

The bonding layer may have a bonding agent having a melting point of 1600 ° C. or lower.

The bonding layer may have a thickness of 10 to 100 μm. As a result, the joint strength of the joint is improved, and the airtightness at the joint is improved.

The first component may be a plate-shaped component having a mounting surface on which the wafer is mounted, and the second component may be a columnar component provided on the side opposite to the mounting surface of the first component. As a result, a wafer support having a relatively complicated shape can be manufactured.

Another aspect of the present invention is a method for producing a conjugate. In this method, a bonding agent is applied to the joint surface between the first part made of machinable ceramics and the second part made of a material selected from the group consisting of machinable ceramics, fine ceramics and metal materials. It is applied and heated to 1400 to 1600 ° C. in an inert atmosphere, and the first component and the second component are joined in a state where the pressure acting on the joint surface is equal to or less than a predetermined value. The pressure acting on the joint surface is a pressure that does not cause damage to each component, for example, 3 MPa or less, and is preferably 1.5 MPa or less from the viewpoint of stable joining treatment work. On the other hand, from the viewpoint of ensuring the joint strength, it is preferable to join the first component and the second component in a state where a pressure of 0.01 MPa or more is applied to the joint surface.

According to this aspect, the conjugate can be produced under relatively easy-to-realize process conditions.

It should be noted that any combination of the above components and the conversion of the expression of the present invention between methods, devices, systems and the like are also effective as aspects of the present invention. Further, an appropriate combination of the above-mentioned elements may be included in the scope of the invention for which protection by the patent is sought by the present patent application.

According to the present invention, it is possible to realize a new bonded body using a ceramic material having excellent workability.

It is the schematic sectional drawing of the wafer support which concerns on this embodiment. It is a top view of the wafer support which concerns on this embodiment. It is a schematic diagram for demonstrating the manufacturing method of the bonded body which concerns on this Embodiment. It is a schematic diagram for demonstrating how the wafer support which concerns on this Embodiment is carved out from the joint body of a predetermined shape. It is a schematic diagram for demonstrating a four-point bending strength test. It is a schematic diagram for demonstrating the airtightness evaluation by the submersion method.

Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same elements are designated by the same reference numerals, and duplicate description will be omitted as appropriate.

(Wafer support)
In the following embodiment, the wafer support will be described as a product obtained by processing the bonded body. The wafer support may be provided with a suction mechanism or a heating mechanism as long as it can support a semiconductor substrate such as a silicon wafer. For example, the wafer support may simply be a susceptor on which the wafer is mounted. Further, the wafer support may be an electrostatic chuck that generates an attractive force with respect to the mounted wafer or a heater that heats the wafer. Further, the object supported by the wafer support is mainly a wafer, but other members and parts may be supported.

In the present embodiment, a case where the wafer support is an electrostatic chuck with a heater will be described as an example. FIG. 1 is a schematic cross-sectional view of a wafer support according to the present embodiment. FIG. 2 is a top view of the wafer support according to the present embodiment.

The wafer support 10 according to the present embodiment includes a base material 12 made of machinable ceramics, and conductive members 14 and 16 in which at least a part of the base material 12 is enclosed. The base material 12 has a support portion 18 having a mounting surface 18a on which the wafer W is mounted, and a columnar portion 20 provided on the side opposite to the mounting surface 18a of the support portion 18. The support portion 18 (first component) according to the present embodiment has a disk shape, the columnar portion 20 (second component) has a cylindrical shape, and the support portion 18 and the columnar portion 20 form a bonding layer 22. It is joined through.

The conductive member 14 functions as electrostatic chuck electrodes 14a and 14b through which a current for generating an attractive force for fixing the wafer W on the mounting surface 18a of the base material 12 flows. Further, the conductive member 16 functions as a resistance heating element 16a. In the wafer support 10 according to the present embodiment, the conductive members 14 and 16 are embedded in the support portion 18 of the base material 12 which is a sintered body. Therefore, the conductive members 14 and 16 need to be arranged inside the raw material powder at the firing stage, and are preferably high melting point metals that do not melt at the firing temperature. For example, as the material of the conductive member, refractory metals such as molybdenum, tungsten, and tantalum, and alloys containing two or more of them are preferable.

Further, as shown in FIG. 1, the wafer support 10 passes through the inside of the columnar portion 20 from the mounting surface 18a exposed on the chamber side and is connected to an external gas supply source (not shown) 18b. Is formed. The gas introduction port 18b is for supplying gas for cooling the wafer W adsorbed on the mounting surface 18a from the back surface side. The gas that has flowed into the mounting surface 18a from the gas introduction port 18b is supplied to the entire back surface side of the wafer W by the radial grooves 18c (see FIG. 2).

(Machinable ceramics)
As a result of diligent studies to find a material suitable for the wafer support, the present inventor has found that a sintered body made of so-called machinable ceramics having good workability (having free-cutting property) is preferable.

Machinable ceramics are easier to machine than general fine ceramics such as aluminum oxide, silicon nitride, aluminum nitride, and silicon carbide. That is, in machinable ceramics, chipping called chipping, which is a problem in ceramics processing, is unlikely to occur, and complicated processing becomes possible. In addition, the grinding amount (machining rate) during processing of machinable ceramics is several to several tens of times the grinding amount during machining of fine ceramics, and efficient machining is possible.

Machinable ceramics is a composite material in which a plurality of raw material compounds as ceramic components are mixed, and the volume resistivity can be adjusted by, for example, the blending ratio of silicon carbide (SiC). As a result, it can be applied to both the adsorption mechanism of the electrostatic chuck such as the Coulomb type and the Johnson Raebeck type. Further, in the case of a heater, it can be used as an insulator by not adding silicon carbide.

Furthermore, although boron nitride (BN) is mentioned as one of the main components, general aluminum oxide (Al ₂ O ₃ ), silicon nitride (Si ₃ N ₄ ), aluminum nitride (Al N), and silicon carbide (SiC) are mentioned. ), It has excellent thermal shock resistance, and when it becomes a product wafer support, it can prevent damage due to cracking.

The machinable ceramic according to the present embodiment is a sintered body made of at least two or more materials that require boron nitride selected from the group consisting of boron nitride, zirconium oxide, silicon nitride, and silicon carbide. Boron nitride is also excellent in machinability, and the processing rate can be increased by using machinable ceramics containing boron nitride as an essential component. Further, in the case of a part in which a conductive member which is a different material is contained inside the base material, an internal stress is generated against a temperature change depending on the difference in physical properties between the part (base material) and the conductive member. Alternatively, in the case of a structure, thermal stress is generated due to a partial temperature difference. For example, thermal stress is generated by the temperature difference between the outer peripheral portion and the central portion of the wafer support. However, since boron nitride has excellent thermal shock resistance, the parts are less likely to crack.

The machinable ceramics according to the present embodiment contains 10 to 80% by mass of boron nitride when the total of the ceramic components of boron nitride, aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride is 100% by mass. It is good to contain it. Further, the machinable ceramics preferably contain 20 to 90% by mass of at least one material selected from the group consisting of aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride. Further, the machinable ceramics may contain silicon nitride in an amount of 0 to 80% by mass, zirconium oxide in an amount of 0 to 80% by mass, or silicon carbide in an amount of 0 to 40% by mass.

Further, the machinable ceramics according to the present embodiment contain a sintering aid component. The sintering aid can be selected from those used for sintering silicon nitride and boron nitride. Preferred sintering aids are one or two obtained from oxides of aluminum oxide (Al ₂ O ₃ : alumina), magnesium oxide (MgO: magnesia), yttrium oxide (Y ₂ O ₃ : ittoria), and lanthanoid metals. More than a seed. More preferably, it is a mixture of alumina and yttria, a mixture obtained by further adding magnesia, or a mixture of yttria and magnesia.

The blending amount of the sintering aid component is preferably in the range of 1 to 25% by mass, particularly 3 to 25% by mass, when the total of the ceramic components is 100% by mass. When the blending amount of the sintering aid component is 1% by mass or more, preferably 3% by mass or more, it becomes easy to densify, and it is possible to suppress insufficient density of the sintered body and deterioration of mechanical properties. On the other hand, when the blending amount of the sintering aid component is 25% by mass or less, the low-strength grain boundary phase is reduced, so that the decrease in mechanical strength and the decrease in workability due to the increase in the grain boundary phase are suppressed. it can.

Boron nitride has excellent machinability but poor strength characteristics. Therefore, if coarse boron nitride is present in the sintered body, it becomes a fracture starting point and causes chipping and cracking during processing. In order not to form such coarse boron nitride particles, it is effective to make the raw material powder into fine powder. It is desirable to use the main raw material powder, particularly the raw material powder of boron nitride, having an average particle size of less than 1 μm. As the boron nitride, there are a hexagonal (h-BN) low-pressure phase and a cubic (c-BN) high-pressure phase, and hexagonal boron nitride is preferable from the viewpoint of free-cutting property. From the viewpoint of workability, it is preferable that the amount of boron nitride is large and the amount of silicon nitride is small. Further, the mechanical strength and Young's modulus decrease as the amount of boron nitride increases and the amount of silicon nitride decreases.

Examples of the machinable ceramics include BN-containing silicon nitride-based ceramics (“Hotvale II”, “Hotvale II-k70”: manufactured by Ferrotec Ceramics Co., Ltd.). The composition of Photober II-k70 is 38.5% by mass of boron nitride, 54.1% by mass of silicon nitride, 5.5% by mass of yttria, and 1.9% by mass of magnesia. This BN-containing silicon nitride-based ceramic has a bending strength of 800 MPa or less, a Young's modulus of 250 GPa or less, and a Vickers hardness of 10 GPa or less. Machinable ceramics having such characteristics have a large grinding amount (processing rate) per unit time during processing, and even a wafer support having a complicated shape can be efficiently produced. Further, a wafer support having a complicated shape can be manufactured by manufacturing a part as a block having a simple shape and then cutting the component into a desired shape.

(Manufacturing method of sintered body)
First, the total of the main raw material powder as a ceramic component such as boron nitride, zirconium oxide, silicon nitride and silicon carbide and the ceramic component was set to 100% by mass according to the blending amount of each Example and each Comparative Example described later. In some cases, a raw material powder is prepared by mixing with 3 to 25% by mass of a sintering aid powder. This mixing can be performed by, for example, a wet ball mill or the like.

Next, the raw material powder, the molded product, or both are molded under high temperature and pressure and fired to produce a sintered body. The raw material powder or a part of the molded body may be replaced with a sintered body. This firing can be performed using, for example, a hot press device. In order to provide the resistance heating element for the heater and the electrode of the electrostatic chuck inside the sintered body, when the hot press device is filled with the raw material powder, the molded body or the sintered body, the conductor is used after firing. A plate-shaped, mesh-shaped, coil-shaped member or conductive paste to be used may be arranged (embedded) at a predetermined position. The shape of the conductor is not particularly limited. The hot press is performed in a non-oxidizing atmosphere such as a nitrogen atmosphere, but may be performed in pressurized nitrogen. Alternatively, it may be carried out in an argon atmosphere. The hot press temperature is, for example, in the range of 1300 to 1950 ° C. If the temperature is too low, sintering will be insufficient, and if it is too high, thermal decomposition of the main raw material will occur. The pressing force is appropriately in the range of 20 to 50 MPa. The duration of the hot press depends on the temperature and dimensions, but is usually about 1 to 4 hours. High temperature pressure sintering can also be performed by HIP (hot isostatic press). Sintering conditions in this case can also be appropriately set by those skilled in the art. As a result, a plurality of parts made of a sintered body are manufactured.

FIG. 3 is a schematic diagram for explaining a method for manufacturing a bonded body according to the present embodiment. As shown in FIG. 3, a slurry-like bonding agent 22a is applied to a part of the surface of the first component 24 made of machinable ceramics, the second component 26 is assembled, and the whole is dried. Then, the heat treatment is performed at a predetermined temperature in the inert atmosphere to produce the bonded body 28. Specifically, the first component 24 and the second component 26 are joined in a state where the pressure acting on the joint surface is 1.5 MPa or less by heating to 1400 to 1600 ° C. in a nitrogen atmosphere. As a result, the bonded body can be manufactured under relatively easy-to-realize process conditions.

After that, the bonded body is processed into a desired shape to manufacture a wafer support. Since the machinable ceramics according to the present embodiment have high strength and high machinability (free-cutting property), complicated microfabrication can be performed in an industrially realistic time. FIG. 4 is a schematic view for explaining how the wafer support 10 according to the present embodiment is carved out from the joint body 28 having a predetermined shape (columnar shape).

As shown in FIG. 4, the joint body 28 according to the present embodiment is a columnar member having a diameter L of about 300 to 450 mm and a thickness d of about 100 to 300 mm. With such a simple shape, it is not necessary to use a complicated mold in the hot press apparatus, and a bonded body made of a uniform and dense sintered body can be produced. Then, the regions R1 to R3 are sequentially cut using a cutting machine to produce a wafer support having a desired shape. The second component 26 and the first component 24 do not have to have the same diameter L. For example, by making the diameter L of the first part 24 smaller than that of the second part 26, a desired shape can be obtained without cutting the region R2. Alternatively, each part may be cut into a predetermined shape and then joined.

As described above, since the machinable ceramics according to the present embodiment have a high processing rate, many regions can be cut in a short time as compared with general fine ceramics which are very hard and have a small processing rate. That is, it is possible to manufacture wafer supports having various shapes because the joints can be processed and then processed without realizing a complicated shape at the stage of producing the parts by firing in the hot press apparatus.

Further, the wafer support is often used in a high vacuum environment such as a semiconductor process, and it is important to suppress leakage through the wafer support. In particular, when the wafer support is composed of separate parts for the support part on which the wafer is mounted and other parts (shaft, pipe, flange, etc.), leakage from the part where the parts are joined is a problem. Become. Further, in bonding using metal such as metal brazing, the bonding material easily evaporates in a high vacuum environment, and contamination of semiconductors becomes a problem. Therefore, in the wafer support according to the present embodiment, a bonding agent for joining the first component and the second component is devised.

The bonding agent may be an insulating material containing at least two or more materials selected from the group consisting of yttrium oxide, ytterbium oxide, aluminum oxide, magnesium oxide or silicon oxide (silica: SiO ₂ ). As a result, sufficient bonding strength can be obtained for parts made of machinable ceramics. Further, even when the conductive member is embedded inside the joint, no electrical leak occurs. Oxides of rare earth elements such as lanthanum and cerium may be used as the bonding agent.

The bonding agent may contain yttrium oxide in an amount of 25 to 65% by mass, at least one of aluminum oxide and magnesium oxide in an amount of 1 to 50% by mass, and silicon oxide in the balance. As a result, sufficient bonding strength can be obtained for parts made of machinable ceramics. Further, the bonding agent preferably has a melting point of 1600 ° C. or lower. As a result, the heating temperature at the time of joining can be suppressed. The thickness of the bonding layer is preferably 10 to 100 μm. As a result, the joint strength of the joint is improved, and the airtightness at the joint is improved. If the thickness of the bonding layer is less than 10 μm, sufficient bonding strength cannot be obtained. On the other hand, if the thickness of the bonding layer exceeds 100 μm, the possibility of leakage from the bonding layer increases.

In the present embodiment, the joint body in which both the first component and the second component are made of machinable ceramics has been described, but the second component may be fine ceramics or a metal material. .. By joining two parts with different characteristics in this way, for example, the first part selects a material suitable for an electrostatic chuck or a heater, and the second part selects a material having excellent mechanical strength. can do.

[Example]
Next, the characteristics of the bonded body according to each example, each reference example, and each comparative example will be described. The contents of the ceramic components in each example and the like are as shown in Table 1. Although not shown in Table 1, the bonding base materials 1 and 2 according to the examples and the like contain an appropriate amount of a sintering aid component in addition to the ceramic component.

(Joint strength by 4-point bending strength test)
FIG. 5 is a schematic diagram for explaining a four-point bending strength test. The bonding base material 1 (first component 24) and the bonding base material 2 (second component 26) are bonded by the bonding layer 22, formed into a bonded body 28, and then cut to form a rectangular parallelepiped test piece 30 having a predetermined shape. Made. With the vicinity of both ends of the test piece 30 supported from below, a load is applied from above to the regions on both sides of the joint layer 22, and the joint strength is calculated from the load when the test piece 30 is broken.

As shown in Table 1, in the bonded bodies according to Examples 1 to 9, the bonding base material 1 and the bonding base material 2 are bonded via a bonding layer. On the other hand, the bonded base materials according to Reference Examples 1 and 2 and Comparative Examples 1, 3 to 5 and 7 could not be bonded (or could not be processed as a test piece). Further, in the bonded bodies according to Examples 1 to 9, a bonded strength of 40 MPa or more was obtained.

Further, the bonded body according to Example 1 and the bonded body according to Comparative Example 1 have the same ceramic components and the composition of the bonding agent, but have different firing temperatures. The firing (bonding) temperature of the bonded body according to Comparative Example 1 was 1300 ° C., and at this temperature, the bonded body could not be bonded (or processed as a test piece). The firing (bonding) temperature of the bonded body according to Comparative Example 2 was 1700 ° C., and at this temperature, only a bonding strength of 30 MPa was obtained. On the other hand, the firing temperature of the bonded bodies according to Examples 1 and 2 was 1400 to 1600 ° C., and a bonded strength of 113 MPa or more was obtained.

Further, the bonded body according to Example 8 does not contain yttria in the bonding agent, and the bonding strength is 43 MPa, which is a small value as compared with the bonded body according to other examples. Further, in the bonded body according to Example 9, ytterbium, which is one of the rare earth elements, is contained in the bonding agent, and the bonding strength is as large as 193 MPa.

(Evaluation of airtightness by submersion method)
FIG. 6 is a schematic diagram for explaining the airtightness evaluation by the submersion method. For the evaluation of airtightness, a bonded body 28 is produced in which two bonding base materials 32 and 34 having a cube shape with a side of 20 mm are bonded via a bonding layer 22. Next, a hole 36 having a diameter of 3 mm is drilled to a position where it penetrates the joint layer 22 using a cemented carbide drill. After that, air was sent from the outside to the hole 36 at a pressure of 0.2 MPa, the bonded body 28 was submerged in water 38, and it was confirmed whether bubbles were generated from the portion of the bonded layer 22. As shown in Table 1, it was found that the bonded bodies according to Examples 1 to 7 and 9 did not generate air bubbles and had sufficient airtightness. On the other hand, in the joints according to Example 8 and Comparative Examples 2 and 6, air bubbles were observed and the airtightness was insufficient. Since the bonding base materials according to Reference Examples 1 and 2 and Comparative Examples 1, 3 to 5 and 7 could not be bonded to each other, the evaluation has not been performed.

Although the present invention has been described above with reference to the above-described embodiments and examples, the present invention is not limited to the above-described embodiments, and the configurations of the respective embodiments are appropriately combined or substituted. This is also included in the present invention. Further, it is also possible to appropriately rearrange the combinations and the order of the processes in the embodiment based on the knowledge of those skilled in the art, and to add modifications such as various design changes to the embodiments, and such modifications are added. Such embodiments can also be included in the scope of the present invention.

10 Wafer support, 12 Substrate, 14 Conductive member, 14a Electrostatic chuck electrode, 16 Conductive member, 16a Resistance heating element, 18 Support part, 18a Mounting surface, 20 Column part, 22 Bonding layer, 24 First part, 26 Second part, 28 Join, 30 Specimen, 32 Bond base, 36 holes.

Claims (10)

The first part made of machinable ceramics and
A second component composed of a material selected from the group consisting of machinable ceramics, fine ceramics and metallic materials, and
A bonding layer that joins the first component and the second component,
Have,
The bonding layer is a bonded body characterized by being an insulating material containing a ceramic material. The bonded body according to claim 1, wherein the machinable ceramic is made of a material having a bending strength of 800 MPa or less, a Young's modulus of 250 GPa or less, and a Vickers hardness of 10 GPa or less. The machinable ceramics shall be a sintered body made of at least two or more materials that require boron nitride selected from the group consisting of boron nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon nitride and silicon carbide. The joined body according to claim 1 or 2. The machinable ceramics are
When the total of ceramic components of boron nitride, aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride is 100% by mass,
Containing 10 to 80% by mass of boron nitride,
Contains 20-90% by weight of at least one material selected from the group consisting of aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride.
The joined body according to claim 3. The bonding layer according to claims 1 to 4, wherein a bonding agent containing at least two or more materials selected from the group consisting of rare earth oxides, aluminum oxide, magnesium oxide or silicon oxide is used. The joined body according to any one item. 5. The bonding agent is characterized by containing 25 to 65% by mass of a rare earth oxide, 1 to 50% by mass of at least one of aluminum oxide and magnesium oxide, and silicon oxide in the balance. The joined body described in. The bonded body according to any one of claims 1 to 6, wherein the bonded layer has a bonding agent having a melting point of 1600 ° C. or lower. The bonded body according to any one of claims 1 to 7, wherein the bonded layer has a thickness of 10 to 100 μm. The first component is a plate-shaped component having a mounting surface on which a wafer is mounted.
The joint according to any one of claims 1 to 8, wherein the second component is a columnar component provided on the side opposite to the mounting surface of the first component. A bonding agent is applied to the joint surface between the first component made of machinable ceramics and the second component made of a material selected from the group consisting of machinable ceramics, fine ceramics and metal materials. A method for producing a bonded body, which is heated to 1400 to 1600 ° C. in an active atmosphere and joins the first component and the second component in a state where the pressure acting on the bonding surface is equal to or less than a predetermined value.

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