JP2020013797A - Light-emitting device manufacturing method - Google Patents

Abstract

To solve the problem in which, while, on a substrate of a light-emitting device, a terminal connected to a light-emitting unit is formed in addition to the light-emitting unit, since a sealing layer is generally formed by a gas phase method, it is also formed on the terminal, it is necessary to remove the sealing layer from above the terminal, and to provide means for easily removing the sealing layer.SOLUTION: The light-emitting device manufacturing method includes steps of: forming a light-emitting unit 140 on a first surface side of a substrate 100; forming terminals 112, 132 electrically connected to the light-emitting unit 140; forming a sealing layer 200 for sealing the light-emitting unit 140; forming a coating layer 210 on a side opposite to the substrate 100 with respect to the sealing layer 200; and lifting off at least a part of the coating layer 210 in a region overlapping with the terminals 112, 132.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a light emitting device.

  In recent years, a light emitting device having an organic EL (Organic Electroluminescence) element in a light emitting unit has been developed. The organic EL element has a configuration in which an organic layer is sandwiched between a first electrode and a second electrode. Since the organic layer is vulnerable to moisture and oxygen, the light emitting portion needs to be sealed. One of the methods for sealing the light emitting portion is to use a sealing layer. As a method of forming the sealing layer, there is a vapor deposition method such as an ALD (Atomic Layer Deposition) method, a CVD method, or a sputtering method.

  Patent Document 1 discloses that a lift-off method is used when a convex pattern is formed on a magnetic recording layer in a magnetic recording medium.

JP 2014-86114 A

  On the substrate of the light-emitting device, in addition to the above-described light-emitting portion, terminals connected to the light-emitting portion are also formed. On the other hand, since the sealing layer is generally formed by a vapor phase method, it is also formed on the terminal. Therefore, it is necessary to remove the sealing layer from above the terminal.

  An example of the problem to be solved by the present invention is to make it possible to easily remove the sealing layer from above the terminal.

The first invention is
Forming a light emitting portion in which a first electrode, an organic layer, and a second electrode are laminated in this order on the first surface side of the substrate;
Forming a terminal electrically connected to the light emitting unit;
Forming a sealing layer for sealing the light emitting section;
Forming a coating layer on the side opposite to the substrate with respect to the sealing layer,
In a region overlapping with the terminal, a step of lifting off at least a part of the coating layer,
Including
In the method for manufacturing a light emitting device, a portion of the coating layer located outside the sealing layer is not in contact with a base of the sealing layer.
The second invention is
A substrate having a first surface;
A light emitting unit in which a first electrode, an organic layer, and a second electrode are laminated in this order on the first surface side of the substrate;
A terminal formed on the substrate and electrically connected to the light emitting unit;
A sealing layer that seals the light emitting portion and does not cover the terminals,
A coating layer formed on the sealing layer,
With
The portion of the coating layer located outside the sealing layer is not in contact with the base of the sealing layer,
At least a part of the lower surface of the portion of the coating layer located outside the sealing layer is located closer to the first surface of the substrate than the upper surface of the second electrode. is there.

  The above and other objects, features and advantages will become more apparent from the preferred embodiments described below and the accompanying drawings.

FIG. 2 is a plan view illustrating a configuration of the light emitting device according to the first embodiment. FIG. 2 is a diagram in which a covering layer, a sealing layer, and a second electrode are removed from FIG. 1. FIG. 3 is a diagram in which an insulating layer and an organic layer are removed from FIG. 2. It is AA sectional drawing of FIG. FIG. 5 is an enlarged view of a region surrounded by a dotted line α in FIG. 4. It is sectional drawing for demonstrating the manufacturing method of a light emitting device. FIG. 9 is a cross-sectional view illustrating a configuration of a light emitting device according to a first modification. FIG. 8 is a cross-sectional view illustrating a method for manufacturing the light-emitting device illustrated in FIG. 7. 13 is a cross-sectional view illustrating a configuration of a light emitting device according to Modification 2. FIG. 13 is a cross-sectional view illustrating a configuration of a light emitting device according to Modification 3. FIG. It is a top view of a light emitting device concerning a 2nd embodiment. FIG. 12 is a diagram in which a partition, a second electrode, an organic layer, and an insulating layer have been removed from FIG. 11. It is BB sectional drawing of FIG. It is CC sectional drawing of FIG. It is DD sectional drawing of FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and description thereof will not be repeated.

(First embodiment)
FIG. 1 is a plan view illustrating a configuration of a light emitting device 10 according to the first embodiment. FIG. 2 is a diagram in which the covering layer 210, the sealing layer 200, and the second electrode 130 are removed from FIG. FIG. 3 is a diagram in which the insulating layer 150 and the organic layer 120 are removed from FIG. FIG. 4 is a sectional view taken along line AA of FIG. FIG. 5 is an enlarged view of a region surrounded by a dotted line α in FIG.

  The light emitting device 10 according to the embodiment includes a substrate 100, a light emitting unit 140, a first terminal 112, a second terminal 132, a sealing layer 200, and a covering layer 210, as shown in FIGS. The light emitting section 140 is formed on the first surface 102 of the substrate 100. The first terminal 112 and the second terminal 132 are formed on the first surface 102 of the substrate 100, and are electrically connected to the light emitting unit 140. The sealing layer 200 is formed on the first surface 102 of the substrate 100 and seals the light emitting unit 140. Further, the sealing layer 200 does not cover the first terminal 112 and the second terminal 132. The covering layer 210 is formed on the sealing layer 200 and is made of a material different from that of the covering layer 210. Then, as shown in FIGS. 1, 4, and 5, in at least a part of the region located next to the first terminal 112 and at least a part of the region located next to the second terminal 132, A part thereof protrudes from the sealing layer 200 to form a protrusion 212. In other words, at least a part of the end of the covering layer 210 is outside the end of the sealing layer 200. The light emitting device 10 is a lighting device or a display, and FIGS. 1 to 4 show a case where the light emitting device 10 is a lighting device. The details will be described below.

  First, the light emitting device 10 will be described with reference to FIGS.

When the light emitting device 10 is a bottom emission type light emitting device, the substrate 100 is a light-transmitting substrate such as a glass substrate or a resin substrate. On the other hand, when the light-emitting device 10 is a top emission light-emitting device, the substrate 100 does not need to have a light-transmitting property. Further, the substrate 100 may have flexibility. In the case where the substrate 100 has flexibility, the thickness of the substrate 100 is, for example, not less than 10 μm and not more than 1000 μm. The substrate 100 is, for example, a polygon such as a rectangle. When the substrate 100 is a resin substrate, the substrate 100 is formed using, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide. When the substrate 100 is a resin substrate, an inorganic barrier film such as SiN _x or SiON is formed on at least one surface (preferably, both surfaces) of the substrate 100 in order to suppress the transmission of moisture through the substrate 100. I have. Note that a flattening layer (for example, an organic layer) may be provided between the inorganic barrier film and the substrate 100.

  A light emitting unit 140 is formed on the first surface 102 of the substrate 100. The light emitting section 140 has a configuration in which the first electrode 110, the organic layer 120, and the second electrode 130 are stacked in this order.

  The first electrode 110 is a transparent electrode having optical transparency. The material of the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), or ZnO (Zinc Oxide). The thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm. The first electrode 110 is formed using, for example, a sputtering method or an evaporation method. Note that the first electrode 110 may be formed using a conductive organic material such as a carbon nanotube or PEDOT / PSS.

  The organic layer 120 has a light emitting layer. The organic layer 120 has, for example, a configuration in which a hole injection layer, a light emitting layer, and an electron injection layer are stacked in this order. A hole transport layer may be formed between the hole injection layer and the light emitting layer. Further, an electron transport layer may be formed between the light emitting layer and the electron injection layer. The organic layer 120 may be formed by an evaporation method. Further, at least one of the organic layers 120, for example, a layer in contact with the first electrode 110 may be formed by a coating method such as an inkjet method, a printing method, or a spray method. Note that, in this case, the remaining layers of the organic layer 120 are formed by an evaporation method. Further, all the layers of the organic layer 120 may be formed by using a coating method.

  The second electrode 130 is made of, for example, a metal selected from the first group consisting of Al, Au, Ag (which may be Ag ink or Ag nanowire), Pt, Mg, Sn, Zn, and In, or a metal selected from the group consisting of: A metal layer made of an alloy of a metal selected from the first group is included. In this case, the second electrode 130 has a light shielding property. The thickness of the second electrode 130 is, for example, not less than 10 nm and not more than 500 nm. However, the second electrode 130 may be formed using the material exemplified as the material of the first electrode 110. The second electrode 130 is formed using, for example, a sputtering method or an evaporation method.

  The materials of the first electrode 110 and the second electrode 130 described above are for the case where the light emitting device 10 is of a bottom emission type. When the light emitting device 10 is a top emission type, the material of the first electrode 110 and the material of the second electrode 130 are reversed. That is, the material of the second electrode 130 is used as the material of the first electrode 110, and the material of the first electrode 110 is used as the material of the second electrode 130.

  The edge of the first electrode 110 is covered with the insulating layer 150. The insulating layer 150 is formed of, for example, a photosensitive resin material such as polyimide, and surrounds a portion of the first electrode 110 that becomes a light emitting region of the light emitting unit 140. By providing the insulating layer 150, a short circuit between the first electrode 110 and the second electrode 130 at the edge of the first electrode 110 can be suppressed.

  The light emitting device 10 has a first terminal 112 and a second terminal 132. The first terminal 112 is connected to the first electrode 110, and the second terminal 132 is connected to the second electrode 130. The first terminal 112 and the second terminal 132 have, for example, a layer formed of the same material as the first electrode 110. Note that an extraction wiring may be provided between the first terminal 112 and the first electrode 110. In addition, a lead wiring may be provided between the second terminal 132 and the second electrode 130.

  A positive terminal of a control circuit is connected to the first terminal 112 via a conductive member (an example of an electronic component) such as a bonding wire or a lead terminal, and a conductive terminal such as a bonding wire or a lead terminal is connected to the second terminal 132. The negative terminal of the control circuit is connected via the member. However, a circuit element such as a semiconductor package may be directly connected to at least one of the first terminal 112 and the second terminal 132. Further, the first terminal 112 and the second terminal 132 may be connected to a control circuit via a flexible printed circuit (FPC). In this case, the first terminal 112 and the second terminal 132 are connected to the FPC via, for example, an anisotropic conductive resin.

  The substrate 100 is further provided with a sealing layer 200 and a coating layer 210.

  The sealing layer 200 is formed on the surface of the substrate 100 on which the light emitting unit 140 is formed, and covers the light emitting unit 140. However, the first terminal 112 and the second terminal 132 are not covered with the sealing layer 200. The sealing layer 200 is formed of, for example, an insulating material, more specifically, an inorganic material. The thickness of the sealing layer 200 is preferably 300 nm or less. The thickness of the sealing layer 200 is, for example, 50 nm or more. The sealing layer 200 is formed using an ALD (Atomic Layer Deposition) method. By using the ALD method, the step coverage of the sealing layer 200 is increased. Note that the sealing layer 200 may be formed using another film formation method, for example, a CVD method or a sputtering method.

  The sealing layer 200 may have a multilayer structure in which a plurality of layers are stacked. In this case, it may have a structure in which a first sealing layer made of the first material and a second sealing layer made of the second material are repeatedly laminated. The lowermost layer may be either the first sealing layer or the second sealing layer. Also, the uppermost layer may be either the first sealing layer or the second sealing layer. Further, the sealing film 200 may be a single layer in which the first material and the second material are mixed.

  The coating layer 210 protects the sealing layer 200. Specifically, the coating layer 210 is formed at least in a region overlapping the light emitting unit 140, but does not overlap most of the first terminals 112 and most of the second terminals 132. The coating layer 210 is formed using a thermosetting resin such as an epoxy resin. However, the coating layer 210 may be a photocurable resin, a film having an adhesive layer, or a metal foil. Further, the coating layer 210 may be a glass plate. The covering layer 210 is thicker than the sealing layer 200. For example, when the covering layer 210 is formed of a resin, the thickness of the covering layer 210 is, for example, not less than 25 μm and not more than 300 μm.

  Except near the first terminal 112 and near the second terminal 132, the edge of the covering layer 210 is located inside the sealing layer 200. However, also in these regions, the edge of the covering layer 210 may be located outside the edge of the sealing layer 200.

  Next, a cross-sectional structure near the first terminal 112 will be described with reference to FIG. The cross-sectional structure near the second terminal 132 is the same as that in FIG.

  As described above, in the region located next to the first terminal 112, the end of the coating layer 210 protrudes from the sealing layer 200 toward the outside of the light emitting device 10, forming a protrusion 212. In other words, the sealing layer 200 does not exist in at least a part of the area below the end of the covering layer 210. The lower surface of the protrusion 212 may not be in contact with either the first electrode 110 or the substrate 100. In the example shown in this drawing, the lower surface of at least the end of the protruding portion 212 is located higher than the portion of the lower surface of the covering layer 210 that is in contact with the sealing layer 200. This is because the lift-off layer 220 was formed between the sealing layer 200 and the first terminal 112 as described later. However, this step can be eliminated by performing thermocompression bonding on the step.

  Next, a method for manufacturing the light emitting device 10 will be described with reference to FIG. First, the first electrode 110 is formed on the substrate 100. In this step, the first terminal 112 and the second terminal 132 are also formed. Next, the insulating layer 150, the organic layer 120, and the second electrode 130 are formed in this order.

  Next, as shown in FIG. 6, a lift-off layer 220 is formed on the first terminal 112 and the second terminal 132. The lift-off layer 220 is a layer that is removed by, for example, a chemical solution or water, and is, for example, a solubilized acrylic resin. The thickness of the lift-off layer 220 is, for example, 1 μm or more and 5 μm or less.

  Next, the sealing layer 200 is formed using a film formation method such as a CVD method, a sputtering method, or an ALD method. At this time, the sealing layer 200 is formed on almost the entire first surface 102 of the substrate 100 including the region overlapping with the light emitting unit 140. Therefore, the first terminal 112 and the second terminal 132 are also covered with the sealing layer 200.

  Next, a layer to be the coating layer 210 is formed over the sealing layer 200 by using, for example, a coating method. At this time, the layer to be the cover layer 210 is overlapped with at least a part of the lift-off layer 220 (for example, a region located near the light emitting unit 140 on the edge of the lift-off layer 220). Next, the coating layer 210 is cured. At this time, stress is generated between the sealing layer 200 and the covering layer 210. For this reason, cracks occur in a region of the sealing layer 200 that overlaps with the lift-off layer 220. Part of this crack also occurs in a portion of the sealing layer 200 that overlaps with the lift-off layer 220 but is not covered with the covering layer 210. In particular, when the covering layer 210 is formed of a thermosetting resin, in this curing step, the difference between the thermal expansion coefficients of the materials forming the sealing layer 200 and the covering layer 210 is caused by the difference between the coefficients of thermal expansion. As a result, thermal stress is generated. For this reason, many cracks occur in a region of the sealing layer 200 that overlaps with the lift-off layer 220.

  Next, a portion of the sealing layer 200 overlapping the first terminal 112 and a portion overlapping the second terminal 132 are washed with a liquid (chemical solution or water) that dissolves the lift-off layer 220. This liquid reaches the lift-off layer 220 via cracks formed in the sealing layer 200, and dissolves the lift-off layer 220. Thereby, a portion of the sealing layer 200 overlapping the first terminal 112 and a portion overlapping the second terminal 132 are removed. At this time, the protrusion 212 is formed on the coating layer 210.

  As described above, according to the present embodiment, the layer serving as the covering layer 210 overlaps at least a part of the lift-off layer 220. For this reason, when the coating layer 210 is cured, stress is generated between the lift-off layer 220 and the coating layer 210, and as a result, cracks are formed in a portion of the sealing layer 200 located above the lift-off layer 220. appear. Therefore, a portion of the sealing layer 200 located above the lift-off layer 220, that is, a portion of the sealing layer 200 overlapping the first terminal 112 and a portion overlapping the second terminal 132 can be easily removed. As a result, the protrusion 212 is formed on the coating layer 210.

(Modification 1)
FIG. 7 is a cross-sectional view illustrating a configuration of the light emitting device 10 according to Modification Example 1, and corresponds to FIG. 5 in the first embodiment. FIG. 8 is a cross-sectional view illustrating the method for manufacturing the light-emitting device 10 illustrated in FIG. 7 and corresponds to FIG. 6 in the first embodiment.

  The light emitting device 10 according to the present modified example has the light emission according to the first embodiment except that the sealing layer 200 is formed on a region of the substrate 100 located around the first terminal 112. The configuration is the same as that of the device 10. In other words, an opening is formed in each of the region overlapping the first terminal 112 and the region overlapping the second terminal 132 in the sealing layer 200. In order to do this, the edge of the lift-off layer 220 may be separated from the edge of the substrate 100 as shown in FIG. Note that the vicinity of the second terminal 132 may have the same structure as that of FIG.

  According to the present modification, similarly to the first embodiment, when the coating layer 210 is cured, cracks occur in the sealing layer 200. Therefore, the sealing layer 200 located on the lift-off layer 220 can be easily lifted off.

(Modification 2)
FIG. 9 is a cross-sectional view illustrating a configuration of a light emitting device 10 according to Modification Example 2, and corresponds to FIG. 5 in the first embodiment. The light emitting device 10 according to the present modification has the same configuration as the light emitting device 10 according to the first modification except that the sealing layer 200 is formed on the end of the first terminal 112. To do so, the edge of the lift-off layer 220 may be separated from the tip of the first terminal 112. Note that the structure similar to that of FIG. 9 may be provided near the second terminal 132.

  According to the present modification, similarly to the first embodiment, when the coating layer 210 is cured, cracks occur in the sealing layer 200. Therefore, the sealing layer 200 located on the lift-off layer 220 can be easily lifted off.

(Modification 3)
FIG. 10 is a cross-sectional view illustrating a configuration of a light emitting device 10 according to Modification Example 3, and corresponds to FIG. 5 in the first embodiment. The light emitting device 10 according to the present modification has the same configuration as the light emitting device 10 according to the first embodiment, Modification 1, or Modification 2 except that the first terminal 112 includes the conductor layer 160. It is. FIG. 10 shows a case similar to the first embodiment.

  The conductor layer 160 is formed on a layer subsequent to the first electrode 110, and is formed of a material having a lower resistance than the first electrode 110, for example, a metal or an alloy. By forming the conductor layer 160, the resistance of the first terminal 112 is reduced. Note that the conductor layer 160 may also be formed on the first electrode 110. In this case, a plurality of linear conductor layers 160 are formed on the first electrode 110. These conductor layers 160 function as auxiliary electrodes of the first electrode 110. Thus, the apparent resistance of the first electrode 110 decreases. Note that the conductor layer 160 may have a multilayer structure. For example, the conductor layer 160 may have a configuration in which a first layer made of Mo or Mo alloy, a second layer made of Al or Al alloy, and a third layer made of Mo or Mo alloy are stacked in this order. In this case, the thickness of the first and third layers is, for example, 40 nm or more and 200 nm or less. The thickness of the second layer is, for example, not less than 50 nm and not more than 1000 nm.

  The second terminal 132 also has the configuration shown in FIG.

  According to the present modification, similarly to the first embodiment, when the coating layer 210 is cured, cracks occur in the sealing layer 200. Therefore, the sealing layer 200 located on the lift-off layer 220 can be easily lifted off. Further, the resistance of the first terminal 112 and the resistance of the second terminal 132 can be reduced.

(Second embodiment)
FIG. 11 is a plan view of the light emitting device 10 according to the second embodiment. FIG. 12 is a diagram in which the partition wall 170, the second electrode 130, the organic layer 120, and the insulating layer 150 are removed from FIG. 13 is a sectional view taken along line BB of FIG. 11, FIG. 14 is a sectional view taken along line CC of FIG. 11, and FIG. 15 is a sectional view taken along line DD of FIG.

  The light emitting device 10 according to the present embodiment is a display, and includes a substrate 100, a first electrode 110, a light emitting unit 140, an insulating layer 150, a plurality of openings 152, a plurality of openings 154, a plurality of lead wires 114, an organic layer 120, It has two electrodes 130, a plurality of extraction wirings 134, and a plurality of partition walls 170.

  The first electrode 110 extends linearly in a first direction (Y direction in FIG. 11). The end of the first electrode 110 is connected to the lead wiring 114.

  The lead wiring 114 is a wiring that connects the first electrode 110 to the first terminal 112. In the example shown in this drawing, one end of the extraction wiring 114 is connected to the first electrode 110, and the other end of the extraction wiring 114 is a first terminal 112. In the example shown in this figure, the first electrode 110 and the lead wiring 114 are integrated. The conductor layer 160 is formed on the lead wiring 114. The configuration of the conductor layer 160 is the same as that of the third modification. Note that a part of the lead wiring 114 is covered with the insulating layer 150.

  As shown in FIGS. 11 and 13 to 15, the insulating layer 150 is formed on the plurality of first electrodes 110 and in a region therebetween. A plurality of openings 152 and a plurality of openings 154 are formed in the insulating layer 150. The plurality of second electrodes 130 extend parallel to each other in a direction intersecting with the first electrodes 110 (for example, a direction orthogonal to the X direction in FIG. 11). Further, between the plurality of second electrodes 130, partition walls 170, which will be described in detail later, extend. The opening 152 is located at the intersection of the first electrode 110 and the second electrode 130 in plan view. Specifically, the plurality of openings 152 are arranged in the direction in which the first electrode 110 extends (Y direction in FIG. 11). The plurality of openings 152 are also arranged in the direction in which the second electrode 130 extends (the X direction in FIG. 11). Therefore, the plurality of openings 152 are arranged so as to form a matrix.

  The opening 154 is located in a region overlapping one end of each of the plurality of second electrodes 130 in a plan view. The openings 154 are arranged along one side of the matrix formed by the openings 152. When viewed in a direction along this one side (for example, the Y direction in FIG. 11, that is, a direction along the first electrode 110), the openings 154 are arranged at predetermined intervals. A part of the extraction wiring 134 is exposed from the opening 154. The lead wiring 134 is connected to the second electrode 130 via the opening 154.

  The lead wiring 134 is a wiring that connects the second electrode 130 to the second terminal 132, and has a layer made of the same material as the first electrode 110. One end of the extraction wiring 134 is located below the opening 154, and the other end of the extraction wiring 134 is extracted outside the insulating layer 150. In the example shown in this drawing, the other end of the lead-out wiring 134 is the second terminal 132. The conductor layer 160 is formed on the lead wiring 134. The configuration of the conductor layer 160 is the same as that of the third modification. Note that a part of the extraction wiring 134 is covered with the insulating layer 150.

  An organic layer 120 is formed in a region overlapping with the opening 152. The hole injection layer of the organic layer 120 is in contact with the first electrode 110, and the electron injection layer of the organic layer 120 is in contact with the second electrode 130. Therefore, the light emitting unit 140 is located in each of the regions overlapping the opening 152.

  Note that the examples shown in FIGS. 13 and 14 show a case where each of the layers constituting the organic layer 120 protrudes outside the opening 152. Then, as shown in FIG. 11, the organic layer 120 may or may not be continuously formed between the adjacent openings 152 in the direction in which the partition wall 170 extends. Good. However, as shown in FIG. 15, the organic layer 120 is not formed in the opening 154.

  The second electrode 130 extends in a second direction (X direction in FIG. 11) intersecting with the first direction, as shown in FIGS. 11 and 13 to 15. A partition 170 is formed between adjacent second electrodes 130. The partition wall 170 extends in parallel with the second electrode 130, that is, in the second direction. The base of the partition 170 is, for example, the insulating layer 150. The partition 170 is a photosensitive resin such as a polyimide resin, for example, and is formed in a desired pattern by being exposed and developed. The partition 170 may be made of a resin other than the polyimide resin, for example, an epoxy resin, an acrylic resin, or an inorganic material such as silicon dioxide.

  The partition wall 170 has a trapezoidal shape with a trapezoid inverted upside down (inverted trapezoid). That is, the width of the upper surface of the partition 170 is larger than the width of the lower surface of the partition 170. For this reason, when the partition 170 is formed before the second electrode 130, the second electrode 130 is formed on one surface side of the substrate 100 by using an evaporation method or a sputtering method, so that the plurality of second electrodes 130 are formed. Can be formed collectively. The partition 170 also has a function of dividing the organic layer 120.

  And also in this embodiment, the light emitting device 10 has the sealing layer 200 and the covering layer 210. The configurations and layouts of the sealing layer 200 and the covering layer 210 are as shown in the first embodiment or its modification. However, in the present embodiment, the first terminal 112 and the second terminal 132 are arranged along the same side of the substrate 100. Therefore, the opening of the sealing layer 200 for exposing the first terminal 112 and the opening for exposing the second terminal 132 are connected to each other.

  Next, a method for manufacturing the light emitting device 10 according to the present embodiment will be described. First, the first electrode 110 and the lead wires 114 and 134 are formed on the substrate 100. These forming methods are the same as in the first embodiment.

  Next, the conductor layer 160 is formed on the extraction wiring 114 and the extraction wiring 134. Next, an insulating layer 150 is formed, and a partition 170 is formed. Next, the organic layer 120 and the second electrode 130 are formed. These forming methods are the same as in the first embodiment.

  Then, the lift-off layer 220, the sealing layer 200, and the coating layer 210 are formed in this order. Next, a portion of the sealing layer 200 overlapping the first terminal 112 and a portion overlapping the second terminal 132 are removed. These steps are the same as in the first embodiment.

  According to the present embodiment, in the display using the light emitting unit 140, similarly to the first embodiment, the portion of the sealing layer 200 located on the first terminal 112 and located on the second terminal 132. The part to be formed can be easily removed.

  As described above, the embodiments have been described with reference to the drawings. However, these are examples of the present invention, and various configurations other than the above can be adopted.

Claims (1)

Forming a light emitting portion in which a first electrode, an organic layer, and a second electrode are laminated in this order on the first surface side of the substrate;
Forming a terminal electrically connected to the light emitting unit;
Forming a sealing layer for sealing the light emitting section;
Forming a coating layer on the side opposite to the substrate with respect to the sealing layer,
In a region overlapping with the terminal, a step of lifting off at least a part of the coating layer,
Including
The method for manufacturing a light emitting device, wherein a portion of the coating layer located outside the sealing layer is not in contact with a base of the sealing layer.

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