JP2015147953A - Film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition method that can make the target life of each target substantially uniform and has superior mass-productivity while having a function of depositing a film with good in-substrate-plane uniformity in film thickness distribution and film quality distribution.SOLUTION: In processing chambers 11a, 11b, targets 31a-31l which are as many as each other are arranged successively at regular intervals in a movement direction in which the process chambers are provided consecutively, and a substrate is transferred and stopped at a position corresponding to each target in each processing chamber so as to have a thin film laminated. The substrate is stopped at such different positions that regions, opposed to the respective targets, on a substrate surface shift in the moving direction between the processing chambers. Electric power is so fed that steady state electric power is applied to the respective targets except the targets positioned at front and rear ends in the moving direction, and alternate low electric power lower than the steady state electric power and high electric power higher than the steady state electric power area applied to the targets positioned at the front and rear ends in the moving direction by turns each time the substrate to have a film deposited thereon changes.

Description

  The present invention relates to a film forming method, and more particularly to a film forming method for forming a predetermined thin film or laminated film on a surface of a processing substrate such as glass having a large area by sputtering.

  One of the methods for forming a predetermined thin film on the surface of a processing substrate such as glass is one using a sputtering method. In this film forming method, ions of a rare gas in a plasma atmosphere formed in a processing chamber are accelerated and bombarded toward a target prepared according to the composition of the film to be formed on the surface of the processing substrate, and sputter from the target. Particles are scattered toward the processing substrate that is stationary facing the target to form a film on the surface of the processing substrate. In recent years, it is widely used for film formation on a processing substrate with a large area, such as a glass substrate for FPD manufacturing. Has been.

  As a sputtering apparatus for performing the above film formation, a plurality of targets having the same shape are arranged in parallel at equal intervals so as to face a processing substrate in a processing chamber, and each target is turned on during sputtering film formation by applying power to each target. For example, Japanese Patent Application Laid-Open No. H10-228707 discloses a method of reciprocating at a constant speed integrally with a processing substrate. Here, in the case where a plurality of targets are arranged in parallel at a predetermined interval, sputtered particles are not emitted from the region between the targets. For this reason, the film thickness distribution on the processing substrate surface and the film quality distribution during the reactive sputtering are undulated (for example, in the case of the film thickness distribution, the thick and thin portions are repeated at the same cycle). It is known to be non-uniform. In the above-mentioned Patent Document 1, the direction in which the targets are arranged side by side is set as the moving direction, and during film formation, the target is reciprocally moved integrally and reciprocally in parallel to change the region where the sputtered particles are not emitted. The uneven distribution of thickness and film quality is improved.

  On the other hand, in Patent Document 2, when the same or different thin films are stacked in a plurality of processing chambers, the continuous direction of the processing chambers is set as a moving direction, and the same number and the same shape of targets in each processing chamber are equally spaced. The above-mentioned film thickness distribution and film quality distribution can be obtained by changing the stop position of the processing substrate so that the regions facing each target among the processing substrate surfaces are shifted in the substrate transfer direction between the processing chambers. The non-uniformity is improved.

  By the way, in the film forming method described in each of the above patent documents, the total length in the moving direction of the region where the targets are arranged in parallel is sufficiently larger than the length in the moving direction of the processing substrate (for example, each target and the processing substrate are combined). If the number of targets to be arranged in parallel is set, so that the target for one sheet protrudes from both ends in the moving direction of the processing substrate when arranged concentrically, the above-mentioned non-uniformity in film thickness distribution and film quality distribution is effective. Can be improved. However, this not only increases the number of targets to be used and increases the size of the sputtering apparatus, but also increases the cost.

  Therefore, although it is conceivable to set the total length in the movement direction of the region in which the targets are arranged side by side to be equal to the length in the movement direction of the processing substrate, the film thickness of the substrate is locally increased at both ends before and after the movement direction. It turned out to be thinner. In the case of “equivalent”, when each target and the processing substrate are arranged concentrically, the length is shorter than the length of one target from both ends of the processing substrate in the moving direction, preferably the length in the moving direction of the target. In this case, the targets on both ends before and after the moving direction protrude about half the length. In this case, for example, if the input power to both targets located at the front and rear ends in the moving direction is made higher than the others and the sputtering rate is increased, the uniformity of the film thickness distribution can be improved. Obtained knowledge. However, there is a problem that the amount of erosion due to sputtering of both targets positioned at the front and rear ends in the moving direction is larger than that of the other targets, the target life becomes extremely short, and mass productivity is impaired.

JP 2004-346388 A JP 2012-184511 A

  Therefore, in view of the above points, the present invention provides a film thickness distribution and a film quality distribution in the substrate plane even if the total length in the moving direction of the region where the targets are arranged in parallel is set equal to the length in the moving direction of the processing substrate. It is an object of the present invention to provide a film forming method that has a function of forming a film with high uniformity and that can substantially equalize the target life of each target and has excellent mass productivity.

  In order to solve the above-mentioned problem, in a plurality of processing chambers arranged in one direction, the continuous direction of the processing chambers is set as the moving direction, and the same number of targets are arranged in parallel along the moving direction, respectively. The processing substrate is transferred to a position facing each target in the processing chamber and stopped, and power is supplied to each target in the processing chamber where the processing substrate exists with respect to the surface of the processing substrate stationary facing each target. In the film forming method of the present invention, in which the same or different thin films are stacked through each processing chamber, the region of the processing substrate surface facing each target moves between the processing chambers in which the thin film is continuously formed. Change the stop position of the processing substrate so that they deviate from each other in the direction, set the power to be applied to each target except the targets located at the front and rear ends in the moving direction as steady power, and position them at the front and rear ends in the moving direction, respectively. Each time the target substrate to be deposited changes, a low power lower than the steady power and a high power higher than the steady power are switched alternately, and the power input to both targets is switched on. It is characterized by.

  According to this, the case where the same thin film is laminated in two processing chambers will be described as an example. When one thin film is formed on the surface of the first processing substrate in one processing chamber, the rear end in the movement direction The power input to the target located on the side is set to a high power (a range of 1.01 to 1.50 times the steady power) to increase the sputtering rate, and the target is located on the front end side in the moving direction. Is set to a low power (in a range of 1 / 1.01 to 1 / 1.50 times the steady power) to form a film at a low sputtering rate. In this state, since sputtered particles are not emitted from the region between the targets, one thin film is non-uniform so that a thick part and a thin part repeat in the same cycle and move. The portion of the processing substrate located on the rear end side in the direction is thicker than the other portions, and the portion of the processing substrate located on the front end side in the moving direction is thinner than the other portions. Yes.

  Next, when stacking other thin films by changing the stop position of the processing substrate in the other processing chamber, the power input to the target located on the rear end side in the moving direction is set to low power and the front end in the moving direction The film is formed by setting the input power to the target located on the side to high power. As a result, when another thin film is laminated with substantially the same film thickness in both processing chambers, the thick part and the thin part are interchanged, and the thick part and the thin part are interchanged before and after the moving direction. Therefore, the film thickness as a laminated film becomes substantially uniform over the entire surface of the processing substrate, and as a result, the film thickness distribution on the surface of the processing substrate and the film quality distribution during reactive sputtering can be prevented from becoming uneven. .

  Next, when forming a laminated film on the surface of the second processing substrate, the power input to the target located on the rear end side in the movement direction is reduced when forming one thin film in one processing chamber. While setting to electric power, the electric power input to the target located in the moving direction front end side is set to high electric power. Then, when depositing another thin film in the other processing chamber, the power applied to the target located on the rear end side in the moving direction is set to a high power and the power supplied to the target located on the front end side in the moving direction is set. Set power to low power. Thereby, the erosion amount by sputtering of the targets located at both ends in the moving direction can be made substantially uniform with the erosion amounts of the other targets. As described above, according to the present invention, even when the total length in the moving direction of the region where the targets are arranged side by side is set to be equal to the length in the moving direction of the processing substrate, the film thickness distribution and the film quality distribution are formed with good uniformity in the substrate surface. While having the function of being able to do so, the target life of each target can be made substantially uniform and the mass productivity is excellent.

  In order to solve the above problems, a plurality of targets are arranged in parallel in the processing chamber at a predetermined interval, the parallel direction of these targets is the moving direction, and each target and the processing substrate are arranged to face each other. Relative reciprocation of each target and processing substrate is performed so that the position of the processing substrate with respect to each target is shifted in the moving direction, power is applied to each target, each target is sputtered, and a predetermined surface is provided on the surface of each processing substrate facing each target. In the film forming method of the present invention for forming a thin film, the power to be applied to each target except the targets positioned at the front and rear ends in the moving direction is set as a steady power, and the targets positioned at the front and rear ends in the moving direction are formed during the film formation. Depending on the position of the processing substrate with respect to each target, a low power lower than the steady power and a high power higher than the steady power are alternately switched, and the power is applied to both targets. Characterized by power-on by changing the power to each other.

  According to this, when the target and the processing substrate arranged in parallel in a single processing chamber are relatively moved to form a thin film, the entire length in the moving direction of the region in which the targets are arranged in the same manner as described above is processed. Even if it is set equal to the length in the direction of movement of the substrate, it has the function of being able to form a film with good uniformity of film thickness distribution and film quality distribution within the surface of the substrate, while the life of each target can be made substantially uniform and mass-productive. It will be excellent. Here, in the “relative reciprocating motion”, when the film is formed while continuously reciprocating each target and the processing substrate, and once at the turning point of the relative reciprocating motion between each target and the processing substrate, This includes a case where the reciprocation is stopped and each target and the processing substrate are stationaryly opposed for a predetermined time to form a film.

  In the present invention, in order to erode the erosion area of each target almost uniformly over the entire surface, the direction from each target to the substrate is the top, and a tunnel-like magnetic flux is respectively provided above each target. It is preferable to form and reciprocate each magnetic flux at a predetermined speed in the substrate transfer direction or movement direction.

The schematic cross section of the sputtering device which can implement the film-forming method of a 1st embodiment of the present invention. The figure explaining the positional relationship between the mask plate and each target in each processing chamber. The figure explaining the film thickness distribution of the board | substrate when forming into a film by the conventional method. (A)-(c) is a figure explaining the relationship between the electric power control of the film-forming in 1st Embodiment, and film thickness distribution. The schematic cross section of the sputtering device which can enforce the film-forming method of 2nd Embodiment of this invention. (A) And (b) is a figure explaining the relationship between a board | substrate position and the input electric power to each target.

  Hereinafter, referring to the drawings, the processing substrate is a rectangular glass substrate (hereinafter referred to as “substrate S”), and the same thin film is laminated on one surface of the substrate S as an example. A film forming method according to an embodiment will be described. In the following, the direction from each of the targets 31a to 31l toward the substrate S is assumed to be upward, and the substrate S is assumed to move from left to right in FIG. , Down, left, right, front, back direction terms are used.

Referring to FIGS. 1 and 2, SM ₁ is a magnetron type sputtering apparatus (hereinafter referred to as “sputtering apparatus”) capable of performing the film forming method of the first embodiment. Sputtering apparatus SM ₁ includes a vacuum chamber 11 that can be held in a predetermined vacuum degree through the non-illustrated vacuum pump. A partition plate 12 is provided in the central portion of the vacuum chamber 11, and two processing chambers 11 a and 11 b having substantially the same volume are formed by the partition plate 12 so as to be connected to each other in a vacuum state in the vacuum chamber 11. . A substrate transfer means 2 is provided in the upper part of the vacuum chamber 11. The substrate transfer means 2 is opposed to a carrier 21 for holding the substrate S with its lower surface (film formation surface) open, and targets 31a to 31l described later in which the carrier 21 is arranged in parallel in each of the processing chambers 11a and 11b. And a drive roller (drive means) (not shown) that can be moved to a position. In addition, since a well-known thing can be utilized as the board | substrate transfer means 2, detailed description is abbreviate | omitted here.

  In each of the processing chambers 11a and 11b, a mask plate 13 is provided between the substrate transfer means 2 and the targets 31a to 31l. Each mask plate 13 is formed with rectangular openings 13a and 13b in plan view in which the substrate S faces each of the targets 31a to 31l. The film formation range of the substrate S is limited, and sputter particles adhere to the surface of the carrier 21 and the like. It plays a role to prevent you from doing. A cathode electrode C having the same structure is provided below each processing chamber 11a, 11b.

  The cathode electrode C has twelve targets 31a to 31l arranged in parallel in the moving direction in the same plane parallel to the substrate S at equal intervals. Each of the targets 31a to 31l is manufactured by a known method according to the composition of a thin film to be formed on the surface of the substrate S, such as Al, Ti, Mo, or ITO, and is formed in, for example, a substantially rectangular parallelepiped (planar view rectangle). . And the dimension of the planar view shape of each target 31a-31l and each target 31a- so that the full length L1 of the moving direction of the area | region where the targets 31a-31l were arranged in parallel is equivalent to the length L2 of the moving direction of the board | substrate S. A gap between 31l is set (see FIG. 2). That is, when the targets 31a to 31l and the substrate S are arranged concentrically in consideration of the vertical distance between the targets 31a to 31l and the substrate S, the targets of the target are moved from both ends in the moving direction of the substrate S. It is appropriately set so that the targets 31a and 31l at both ends protrude in a range of half or less of the length L3 in the moving direction. The lengths of the targets 31a to 31l are set so that the directions of the targets 31a to 31l orthogonally extend from the end of the substrate S, respectively. Each of the targets 31a to 31l is joined to a backing plate 32 that cools the targets 31a to 31l via a bonding material (not shown) such as indium or tin during film formation by sputtering.

  Each target 31a to 31l is supported by a single support plate 33, and a shield plate 34 is provided on the support plate 33 so as to surround each of the targets 31a to 31l. The shield plate 34 serves as an anode during film formation. It plays a role and prevents the plasma targets 31a to 31l from wrapping downward. Each of the targets 31a to 31l is connected to a DC power source (sputtering power source) 35 disposed outside the vacuum chamber 11, so that a predetermined power having a negative potential can be applied to each of the targets 31a to 31l. .

  Moreover, the cathode electrode C has the magnet unit 4 arrange | positioned and arrange | positioned under each target 31a-31l, respectively. Each magnet unit 4 has a support plate 41 provided in parallel with each of the targets 31a to 31l. The support plate 41 is set to be smaller than the length L3 in the moving direction of each of the targets 31a to 31l and to extend from the end of each of the targets 31a to 31l in a direction orthogonal to the moving direction. Made of magnetic material to be amplified. The support plate 41 is provided with a central magnet 42 that is linearly disposed at the center thereof and a peripheral magnet 43 that is disposed along the outer periphery of the support plate 41 with an upper polarity. In this case, the volume when converted to the same magnetization of the central magnet 42 is, for example, equal to the sum of the volumes when converted to the same magnetization of the peripheral magnet 43 (peripheral magnet: center magnet: peripheral magnet = 1: 2: 1). A balanced closed-loop tunnel-shaped magnetic flux is formed above each of the targets 31a to 31l.

  Each magnet unit 4 is integrally connected to a drive shaft 51 of a drive means 5a, 5b such as a motor or an air cylinder, and is integrated in parallel and at a constant speed between two positions along the moving direction of the targets 31a to 31l. To reciprocate. As a result, the erosion region is obtained evenly over the entire surface of each of the targets 31a to 31l by changing the position of the magnetic flux at which the sputtering rate increases.

The vacuum chamber 11 is provided with gas introduction means 6a and 6b for introducing a sputtering gas made of a rare gas such as Ar into the processing chambers 11a and 11b, respectively. The gas introduction means 6 a and 6 b have, for example, a gas pipe 61 attached to the side wall of the vacuum chamber 11, and the gas pipe 61 communicates with a gas source 63 via a mass flow controller 62. When a predetermined thin film is formed on the surface of the substrate S by reactive sputtering, other gas introduction means for introducing a reactive gas such as oxygen or nitrogen into the processing chambers 11a and 11b is provided. Then, the sputtering device SM ₁ has a control unit (not shown) having a microcomputer, a programmable controller or the like, the sputter power supply 35, operation of the mass flow controller and the vacuum evacuation means are integrally controlled. The following describes a method of forming the first embodiment using the aforementioned sputtering apparatus SM _1.

The substrate S is set on the carrier 21 and transferred to a position facing the targets 31a to 31l in one processing chamber 11a. When the processing chamber 11a is evacuated to a predetermined pressure (for example, 10 ⁻⁵ Pa), a sputtering gas and a reactive gas are introduced through the gas introduction means 6a, and each target 31a to 31l is identical from the DC power source 35. Of predetermined power (for example, 50 kW). Thereby, plasma is formed in the space between the substrate S and each of the targets 31a to 31l, and ions of the sputtering gas in the plasma are accelerated and bombarded toward the targets 31a to 31l to sputter particles (target atoms). Are scattered toward the substrate S to form one thin film on the surface of the substrate S.

Here, as described above, when forming by sputtering device SM _1, sputtered particles from the region R1 where the shield plate 34 between each target 31a~31l mutual resides is not released. For this reason, when the substrate S is located concentrically with respect to the juxtaposed region TE of the targets 31a to 31l, the formed thin film has a film thickness along the moving direction of the substrate S as shown in FIG. Looking at the distribution, it becomes non-uniform so that it undulates, that is, a thick portion and a thin portion repeat in the same cycle, and both end portions of the substrate S located on the front and rear end sides in the moving direction are other The film thickness becomes extremely thin compared with the part (the part surrounded by the dotted line in FIG. 3).

  In the first embodiment, between the processing chambers 11a and 11b, the processing chambers 11a and 11b are arranged such that a portion of the surface of the substrate S facing the region R1 between the targets 31a to 31l is displaced forward and backward in the moving direction. The stop position of the substrate S at 11b is changed. Specifically, as shown in FIG. 2, the opening 13a of the mask plate 13 in one processing chamber 11a and the opening 13b of the other processing chamber 11b mask plate 13 are formed so as to be shifted from each other in the moving direction. In addition, this is used as a reference for determining the stop position of the substrate S transferred to the positions facing the targets 31a to 31l in the processing chambers 11a and 11b. Then, when the carrier 21 is moved to a position where the substrate S faces each opening 13a, 13b of the mask plate 13 (a position where the substrate S and the opening 13a or the opening 13b coincide with each other in the vertical direction), a position for detecting the carrier 21 is moved. When the detection means 8 such as a sensor is provided in the vacuum chamber 11 and the substrate S is transferred to the plurality of processing chambers 11a and 11b, the substrate is moved in the processing chambers 11a and 11b so that the thick portion and the thin portion are switched. S is positioned accurately.

At the same time, as shown in FIG. 4, the power supplied from the sputtering power source 35 to each of the targets 31b to 31k excluding the two targets 31a and 31l positioned at the front and rear ends in the moving direction is a steady power (for example, 50 kW). The control means alternately switches the two targets 31a and 31l between a low power lower than the steady power and a high power higher than the steady power every time the substrate S to be deposited is changed, The sputter power supply 35 corresponding to the two targets 31a and 31l is controlled so that the power supplied to 31a and 31l is switched to each other. That is, as shown in FIG. 4A, when one thin film is formed on the surface of the first substrate S in one processing chamber 11a located on the rear side in the movement direction, it is located on the rear end side in the movement direction. The power applied to the target 31a is set to a high power (a range of 1.01 to 1.50 times the steady power) to increase the sputtering rate, and the film is deposited, and the power is applied to the target 31l located on the front end side in the moving direction. The power is set to a low power (1 / 1.01 to 1 / 1.50 times the steady power) to form a film at a low sputtering rate. In this state, as described above, one thin film TF ₁ is non-uniform so that a thick portion and a thin portion are repeated in the same cycle, and the substrate S positioned on the rear end side in the movement direction. The thickness of the portion is larger than that of the other portions, and the thickness of the portion of the substrate S located on the front end side in the movement direction is thinner than that of the other portions (see FIG. 4B). .

Next, when another thin film TF ₂ is stacked in the other processing chamber 11b located on the front side in the movement direction, the stop position of the substrate S is changed, and the input power to the target 31a located on the rear end side in the movement direction is changed. The film is formed while setting the power to low and setting the power applied to the target 31l located on the front end side in the moving direction to high power. As a result, when another thin film is laminated with substantially the same film thickness in both processing chambers 11a and 11b, the thick part and the thin part are interchanged, and the thick part and the thin part before and after the moving direction. And the film thickness as the laminated film LF becomes substantially uniform over the entire surface of the substrate (see FIG. 4B), and as a result, the film thickness distribution on the substrate surface and the film quality distribution during reactive sputtering undulate. Can be prevented from becoming uneven.

Next, when forming the laminated film on the second surface of the substrate S out of the figure, as shown in FIG. 4 (c), when forming one of the thin film TF ₁ at one of the processing chamber 11a The input power to the target 31a located on the rear end side in the movement direction is set to low power, and the input power to the target 31l located on the front end side in the movement direction is set to high power. Then, when forming the other film TF ₂ at the other of the processing chamber 11b, and charge power to the target 31a located in the moving direction rear end side and sets the high-power, located in the moving direction of the front side The input power to the target 31l is set to low power. Thereby, the amount of erosion by sputtering of the targets 31a and 31l located at both ends in the moving direction and the amount of erosion of the other targets 31b to 31k can be made substantially uniform.

  According to the first embodiment described above, even if the total length L1 in the movement direction of the region where the targets 31a to 31l are arranged side by side is set equal to the length L2 in the movement direction of the substrate S, the film thickness distribution and the film quality distribution The target life of each of the targets 31a to 31l can be made substantially uniform and has excellent mass productivity while having the function of being able to form a film with good uniformity within the substrate surface. In the case where an odd number of processing chambers are provided and, for example, a three-layer film is formed on the substrate surface, each processing chamber is arranged such that the location of the substrate S facing the region between the targets is shifted by one third in each processing chamber. The substrate may be stopped at

In order to confirm the effect described above, using a sputtering apparatus SM ₁ shown in FIG. 1, a laminate of Al film two layers on the substrate S by sputtering. As the targets 31a to 31l in the processing chambers 11a and 11b, 99.99% Al is used, formed into a substantially rectangular shape in a plan view of 200 mm × 2650 mm × thickness 16 mm, joined to the backing plate 32, and each of the targets 31a to 31l. The distance between the centers of 31 l is set to 230 mm (the distance between the moving direction ends of the targets 31 a to 31 l is 30 mm) on the support plate 33. The substrate S was a glass substrate of 2200 mm × 2500 mm, and the distance between the targets 31 a to 31 l and the substrate S was set to 180 mm. Further, in one processing chamber 11a, the substrate S is stopped so that the rear side in the movement direction of the substrate S is located almost immediately above the rear side of the target 31a located on the rear end side in the movement direction, and the other processing chamber 11b. Then, the substrate S was stopped at a position moved 115 mm in the substrate transfer direction.

  As sputtering conditions, Ar is introduced into the processing chambers 11a and 11b by controlling the mass flow controller so that the pressure in the vacuumed processing chambers 11a and 11b is maintained at 0.5 Pa, and the substrate S temperature is set to 120. Set to ° C. In each of the processing chambers 11a and 11b, the steady power supplied from the sputtering power source 35 to the targets 31b to 31k excluding the two targets 31a and 31l positioned at the front and rear ends in the moving direction is 50 kW, and the high power is 60 kW (1 .2 times) and low power of 45 kW (0.9 times), sputtering was performed for 15 seconds, and two Al films having a thickness of 150 nm were stacked on the surface of the substrate S to obtain a 300 nm Al film.

  According to the above experiment, the film thickness distribution along the moving direction of the substrate S was ± 9.4%. As another experiment, when the film was formed without changing other conditions with a low power of 40 kW, the film thickness distribution along the moving direction of the substrate S was ± 10.9%. In addition, when film-forming was performed with respect to the several board | substrate S and the amount of erosion of each target 31a-31l was confirmed, it has confirmed that all of the targets 31a-31l were eroded substantially equally.

Next, the film forming method of the second embodiment will be described. Referring to FIG. 5, SM ₂ is a magnetron type sputtering apparatus capable of performing the film forming method of the second embodiment in a single processing chamber 110. In the following, it is used for the same parts and the like and a sputtering device SM ₁ described in the first embodiment and are identified by the same reference numerals, and detailed description thereof will be omitted.

The sputtering apparatus SM ₂ has a vacuum chamber 10 that defines a single processing chamber 110. The substrate transfer means 2 is provided in the upper part of the processing chamber 110, and the cathode electrode C is provided in the lower part thereof. In this case, the carrier on which the substrate S is set at a predetermined interval D and a predetermined speed (for example, 1-110 mm / s) parallel to the targets 31a to 31l along the moving direction by controlling the driving means of the substrate transfer means 2. 21 is reciprocated. The following describes a method of forming the second embodiment using the sputtering apparatus SM ₂ with reference to FIG.

The first substrate S is set on the carrier 21 and transferred to a position facing the targets 31 a to 31 l in the processing chamber 110. In this case, the substrate S is positioned so that the rear side in the moving direction of the substrate S is located almost immediately above the rear side of the target 31a located on the rear end side in the moving direction (position P1 in FIG. 5). When the processing chamber 110 is evacuated to a predetermined pressure (for example, 10 ⁻⁵ Pa), a sputtering gas or a reactive gas is introduced through the gas introduction unit 6a, and the DC power source 35 is supplied to each of the targets 31a to 31l. Then, a predetermined electric power is supplied to the carrier 21 and the carrier 21 (and consequently the substrate S) is moved forward in the moving direction.

  In this case, the power supplied from the sputtering power source 35 to each of the targets 31b to 31g excluding the two targets 31a and 31l respectively positioned at the front and rear ends in the movement direction is a steady power (for example, 50 kW). In accordance with the position of the substrate S, a low power lower than the steady power and a high power higher than the steady power are alternately switched, and the power input to both targets is switched between the targets 31a and 31l. Thus, the sputtering power source 35 corresponding to the two targets 31a and 31l is controlled. That is, at the beginning of film formation, as shown in FIG. 6A, the input power to the target 31a located on the rear end side in the movement direction is set to low power (1 / 1.01 to 1 / 1.50 times the steady power). To the target 31l located on the front end side in the moving direction with a high power (range of 1.01 to 1.50 times the steady power). Set to increase the sputtering rate and form a film.

  When the carrier 21 starts moving backward after the carrier 21 has reached the turning point P2, as shown in FIG. 6B, the carrier 21 moves toward the target 31a located on the rear end side (left side in FIG. 5). The input power is switched to high power, and the power input to the target 31l located on the front end side in the movement direction (right side in FIG. 5) is switched to low power. This operation is repeated while the film is formed on the substrate S. Thereby, even when the total length L1 in the moving direction of the region where the targets 31a to 31l are arranged side by side is set equal to the length L2 in the moving direction of the substrate S, the film thickness distribution on the surface of the substrate S and the reactive sputtering It is possible to prevent the film quality distribution of the film from becoming non-uniform so as to wave. Moreover, the amount of erosion caused by sputtering of the targets 31a and 31l located at both ends in the moving direction can be made substantially equal to the amount of erosion of the other targets 31b to 31k. Note that when the input power to the targets 31a and 31l at both ends in the moving direction is set to high power or low power, it is not necessary to set both to the same power, and is set appropriately in consideration of the amount of erosion of the target. be able to.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to said thing. In each of the first and second embodiments, the DC power source 35 is used as the sputtering power source. However, the present invention is not limited to this, and two adjacent targets among the targets 31a to 31l arranged side by side. And a pair of targets 31a to 31l may be supplied with AC power at a predetermined frequency (1 to 400 KHz) from an AC power source as a sputtering power source. The targets positioned at the front and rear ends in the moving direction refer to the two targets 31a and 31l at both ends. In the above example, a pair of targets (31a and 31b, respectively) positioned at both ends in the moving direction, 31k and 31l) are targets located at the front and rear ends in the movement direction, respectively. In addition, a low power lower than the steady power and a high power higher than the steady power each time the substrate S to be deposited is changed to the two targets 31a and 31l respectively positioned at the front and rear ends in the movement direction among the targets arranged in parallel. When the power is alternately switched on, the same effect as described above can be obtained even if the input power is controlled so as to be opposite to the power input described in the first and second embodiments.

  Moreover, although the said 2nd Embodiment demonstrated as an example what moved the board | substrate S with respect to the juxtaposed area | region of the targets 31a-31l, it is not limited to this, For example, two points in FIG. As shown by a chain line, an output shaft 72 of a motor 71 as a driving unit is connected to one side of a support plate 33 that supports the targets 31a to 31l, and the targets 31a to 31l are moved along the moving direction during film formation. The target 31a to 31l and the substrate S can be reciprocated between them in parallel with the substrate S at a constant speed.

  In the second embodiment, the case where films are formed while the targets 31a to 31l and the substrate S are continuously reciprocated relative to each other has been described as an example. The present invention can also be applied to the case where film formation is performed by temporarily stopping the relative reciprocation at the turn-back points P1 and P2 of the relative reciprocation so that the targets 31a to 31l and the substrate S face each other for a predetermined time. . That is, when the substrate S reaches the turn-back positions P1, P2 of the reciprocating motion, the driving unit of the substrate transfer unit 2 may be controlled so that the substrate S stops for a predetermined time (for example, within 60 seconds). Thereby, according to the amount of sputtered particles directed to the substrate S based on the target species, that is, the scattering distribution at the time of sputtering of each target, by simply setting the stop time of the substrate S at each turning point P1, P2, It is possible to further suppress the occurrence of a film thickness distribution or a film quality distribution that slightly undulates in the thin film formed on the surface of the substrate S. At this time, it is preferable that the magnet assembly 4 is reciprocated at least once, and in order to increase the degree of freedom of control in which the generation of the undulating film thickness distribution and film quality distribution is suppressed, the substrate S is moved to one folding position P1 ( Alternatively, when moving from P2) toward the other P2 (or P1), the power supply to the targets 31a to 31l is stopped, and the thin film may be formed only when the substrate S is stopped.

SM _1, SM 2 _... sputtering apparatus, 11a, 11b, 110 ... treatment chamber, 2 ... substrate transfer means, 21 ... carrier, 31A～31l ... target, 35 ... sputtering power source, 6a, 6b ... gas introducing means, S ... substrate , TE: Target parallel area.

Claims (3)

In a plurality of processing chambers arranged in one direction, the continuous direction of the processing chambers is set as the movement direction, and the same number of targets are arranged in parallel along the movement direction at equal intervals, and each target is opposed to each target. The processing substrate is transferred to a position and stopped, and the target is sputtered by applying power to each target in the processing chamber where the processing substrate exists with respect to the surface of the processing substrate stationaryly facing each target. A method for depositing the same or different thin films,
In what changes the stop position of the processing substrate so that the regions facing each target among the processing substrate surfaces between the processing chambers that continuously form a thin film are displaced from each other in the movement direction,
The power input to each target excluding the targets located at the front and rear ends in the moving direction is set as the steady power, and the target power located at the front and rear ends in the moving direction is changed to a low power lower than the steady power every time the processing substrate to be deposited is changed. A film forming method, wherein high power higher than steady power is alternately switched and power input to both targets is switched to each other. A plurality of targets are arranged in parallel in the processing chamber at a predetermined interval, the direction in which these targets are arranged is set as the moving direction, each target and the processing substrate are arranged to face each other, and the position of the processing substrate relative to each target is the moving direction. In a film forming method, each target and the processing substrate are reciprocated relative to each other so as to be displaced by each other, power is applied to each target, each target is sputtered, and a predetermined thin film is formed on the surface of the processing substrate facing each target. ,
The power input to each target excluding the targets located at the front and rear ends in the moving direction is set as the steady power, and during film formation, the targets located at the front and rear ends in the moving direction are subjected to the steady power according to the position of the processing substrate with respect to each target. A film-forming method characterized by alternately switching between a low low power and a high power higher than a steady power, and switching the powers applied to both targets to each other. The direction from the target to the substrate is upward, a tunnel-like magnetic flux is formed above each target, and the magnetic flux reciprocates at a predetermined speed in the substrate transfer direction or movement direction. The film forming method according to claim 1 or 2.

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