JP2015082628A - Semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which inhibits a shadow corresponding to an inter-element region from being formed on a light emitting surface of the device and has a great improvement in luminance unevenness.SOLUTION: A semiconductor light emitting device comprises: a plurality of semiconductor light emitting elements 11, 12 composed of semiconductor structure layers 21, 26 including luminescent layers 21B, 26B, respectively; a support substrate 13 on which the plurality of semiconductor light emitting elements are arranged in parallel with each other; and a reflection wall 17 formed on the support substrate in a region between neighboring semiconductor light emitting elements. The reflection wall extends in a direction along a lateral face of the semiconductor light emitting element and a top has a convex shape.

Description

  The present invention relates to a light emitting device, and more particularly to a semiconductor light emitting device having a semiconductor element such as a light emitting diode (LED).

  In a semiconductor light emitting device such as a light emitting diode, an n type semiconductor layer, a light emitting layer, and a p type semiconductor layer are usually grown on a growth substrate, and a voltage is applied to the n type semiconductor layer and the p type semiconductor layer, respectively. It is fabricated by forming an electrode and a p-electrode. Further, as a semiconductor light emitting device for improving heat dissipation performance, a so-called pasted structure having a structure in which a p-electrode is formed on a p-type semiconductor layer and then the device is bonded to a support substrate through a bonding layer and the growth substrate is removed. A semiconductor light emitting device having a laminated structure is known. There is also known a method of manufacturing a semiconductor light emitting device by using a plurality of semiconductor light emitting elements, connecting each of them on a support substrate, and further forming a phosphor layer containing a phosphor on the element.

  Patent Document 1 discloses a backlight having a light guide having a plurality of openings on the bottom surface, side-emitting LEDs provided in the openings, and optical features formed on the upper wall of the light guide. It is disclosed.

JP 2010-541154 A

  The light distribution shape of an automotive headlight is determined by the standard. For example, when a light source used for an automobile headlight is manufactured, a semiconductor light emitting device in which a plurality of semiconductor light emitting elements are arranged so as to correspond to the light distribution shape as a whole is manufactured. However, since a plurality of semiconductor light emitting elements are used, a portion where no light emitting portion exists is formed between the elements. For this reason, although the light distribution shape conforming to the standard can be satisfied as a whole, a bright part and a dark part are formed strictly. However, it is desirable that luminance unevenness does not exist in various application fields of a light source device using a plurality of elements as well as in a case where the headlight is used for an automobile.

  The present invention has been made in view of the above points, and provides a semiconductor light-emitting device in which a dark portion corresponding to an inter-element region is prevented from being formed on a light-emitting surface of the device and luminance unevenness is greatly improved. It is an object.

  A semiconductor light emitting device according to the present invention includes a plurality of semiconductor light emitting elements each including a semiconductor structure layer including a light emitting layer, a support substrate on which the plurality of semiconductor light emitting elements are juxtaposed, and a region between adjacent semiconductor light emitting elements of the support substrate. A reflecting wall formed in the direction extending along the side surface of the semiconductor light emitting element, and the top has a convex shape.

(A)-(c) is a figure which shows the structure of the semiconductor light-emitting device of Example 1. FIG. FIG. 4 is a diagram illustrating a light path in the semiconductor light emitting device of Example 1. (A)-(d) is a figure which shows the manufacturing method of the semiconductor light-emitting device of Example 1. FIG. (A)-(c) is sectional drawing which shows the structure and manufacturing process of the semiconductor light-emitting device of Example 2. FIGS.

  Hereinafter, preferred embodiments of the present invention will be described in detail. In the following description and the accompanying drawings, substantially the same or equivalent parts are denoted by the same reference numerals.

  FIGS. 1A and 1B are cross-sectional views showing the structure of the semiconductor light emitting device 10 of the first embodiment. FIG. 1C is a diagram schematically showing the upper surface of the semiconductor light emitting device 10. 1A and 1B are cross-sectional views taken along lines VV and WW in FIG. 1C, respectively. As shown in FIG. 1A, the semiconductor light emitting device 10 has a configuration in which two semiconductor light emitting elements 11 and 12 are fixed on a support substrate 13. In this embodiment, the case where the semiconductor light emitting element 11 and the semiconductor light emitting element 12 have the same structure will be described. Further, in this embodiment, as shown in FIG. 1B, the case where the semiconductor structure layers 21 and 26 have a rectangular shape when viewed from above, that is, when viewed from a direction perpendicular to the support substrate 13 is described. To do.

As shown in FIG. 1A, the semiconductor light emitting element 11 has a semiconductor structure layer 21 including a light emitting layer 21B. More specifically, the semiconductor structure layer 21 has a structure in which the light emitting layer 21B is sandwiched between an n-type semiconductor layer (first semiconductor layer) 21A and a p-type semiconductor layer (second semiconductor layer) 21C. . The semiconductor structure layer 21 includes a p-type semiconductor layer 21C, a light-emitting layer 21B, and an n-type semiconductor layer 21A having a composition of Al _x In _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1). 12 has a structure of being sequentially stacked on top of each other.

  The side surface 21S facing the semiconductor light emitting element 12 adjacent to the semiconductor structure layer 21 is inclined so that the distance between the semiconductor structure layers is reduced toward the support substrate 13. That is, the distance between the semiconductor light emitting elements 11 and 12 is smaller on the lower surface than on the upper surface of the semiconductor structure layer 21. In the present embodiment, the case where all the side surfaces of the semiconductor structure layer 21 are inclined will be described.

  An n-electrode (first electrode) 22 and a p-electrode (second electrode) 23 are formed on the n-type semiconductor layer 21A and the p-type semiconductor layer 21C, respectively. In this embodiment, the entire semiconductor structure layer 21, n-electrode 22 and p-electrode 23 are referred to as a semiconductor light emitting element 11. The p-electrode 23 may include a reflective layer (not shown) made of a highly reflective metal such as Ag. The reflective layer functions as a layer that reflects the light emitted from the light emitting layer 21B with high efficiency.

  The semiconductor light emitting element 12 has the same structure as the semiconductor light emitting element 11. Specifically, the semiconductor light-emitting element 12 includes a semiconductor structure layer 26, an n-electrode 27, and a p-electrode 28, and the semiconductor structure layer 26 (n-type semiconductor layer 26A, light-emitting layer 26B, and p-type semiconductor layer 26C) includes The semiconductor structure layer 21, the n electrode 27 have the same configuration as the n electrode 22, and the p electrode 28 has the same configuration as the p electrode 23, respectively.

  The semiconductor light emitting elements 11 and 12, that is, the semiconductor structure layers 21 and 26 are supported by the support substrate 13. Specifically, the semiconductor light emitting elements 11 and 12 are arranged side by side on the support substrate 13. Further, the semiconductor light emitting elements 11 and 12 are arranged such that the distance between the elements is constant in the inter-element region A1. The support substrate 13 is made of a material with high heat dissipation such as Si and AlN. An insulating layer 14 is formed on the support substrate 13, and bonding layers 15 and 16 are formed on the insulating layer 14 so as to be separated from each other. The semiconductor light emitting elements 11 and 12 are bonded to the support substrate 13 via bonding layers 15 and 16, respectively. The bonding layers 15 and 16 are formed in contact with the p electrodes 23 and 28, respectively.

  A reflection wall 17 is provided in a region A1 between the semiconductor light emitting elements 11 and 12. Specifically, the reflection wall 17 is formed on a region A1 between the semiconductor light emitting elements 11 and 12 of the support substrate 13. The reflecting wall 17 has a height exceeding the light emitting layers 21B and 26B. The reflection wall 17 extends in the direction along the side surfaces of the semiconductor light emitting elements 11 and 12, that is, in the longitudinal direction of the inter-element region A1, and preferably has a certain height in the longitudinal direction. Further, the reflection wall 17 has a shape (round shape, dome shape or arch shape) whose top portion is rounded in the adjacent direction (element arrangement direction), and a circular convex shape when the cross section of the top portion is viewed. have. The reflecting wall 17 is made of a metal material having a high reflectance such as Au or Ag. Further, the reflection wall 17 is insulated from at least one of the bonding layers 15 and 16. The reflection wall 17 will be described later with reference to FIG.

  The semiconductor light emitting device 10 includes a phosphor layer 18 provided so as to embed the semiconductor light emitting elements 11 and 12, the bonding layers 15 and 16, and the reflection wall 17. The phosphor layer 18 is made of a light-transmitting resin such as silicon resin, for example. The phosphor layer 18 has phosphors 18 </ b> A provided in a large number dispersed in the phosphor layer 18. The phosphor 18A converts the wavelength of the light emitted from the light emitting layers 21B and 26B.

Next, the connection form of the semiconductor light emitting elements 11 and 12 will be described with reference to FIG. FIG.1 (b) is sectional drawing along the WW line of FIG.1 (c). For ease of understanding, some reference symbols and components are omitted. The n-electrode 22 of the semiconductor light emitting element 11 is connected to one end of the external power supply via the external connection wiring OW. More specifically, an external metal layer OM connected to an external power source (not shown) is formed on the support substrate 13. A protective film PL made of an insulating material such as SiO ₂ is formed on the side surface of the semiconductor structure layer 21. The n electrode 22 is connected to the connection metal layer OM via the external connection wiring OW provided on the protective film PL. The p-electrode 23 of the semiconductor light-emitting element 11 and the n-electrode 27 of the semiconductor light-emitting element 12 are connected by an inter-element connection wiring CW. More specifically, the protective film PL is provided on the side surface of the semiconductor structure layer 26, and the n-electrode 27 is joined to the semiconductor light emitting element 11 via the inter-element connection wiring CW provided on the protective film PL. Connected to layer 15. Although not shown, the p-electrode 28 of the semiconductor light emitting element 12 is connected to the same wiring as the external connection wiring OW connected to the other end of the external power supply. Therefore, the semiconductor light emitting device 10 has a configuration in which the semiconductor light emitting elements 11 and 12 are connected in series between the terminals of the power source.

  FIG. 1C is a diagram schematically showing the upper surface of the semiconductor light emitting device 10. As shown in FIG. 1C, the semiconductor light emitting elements 11 and 12 are connected by two inter-element connection wirings CW. In addition, the connection form of the semiconductor light emitting device 10 in this embodiment is merely an example.

  Next, the reflection wall 17 will be described with reference to FIG. FIG. 2 is a partial enlarged cross-sectional view in which a portion surrounded by a broken line in FIG. For clarity of illustration, some hatching is omitted. The reflection wall 17 is formed at a height H that exceeds the light emitting layers 21B and 26B when viewed from the side, that is, from a direction parallel to the semiconductor structure layers 21 and 26, from the region A1 on the support substrate 13. Thus, the shortest optical path between the light emitting layer 21B and the light emitting layer 26B is blocked. Accordingly, it is possible to suppress the light emitted from the light emitting layer 21B from entering the semiconductor structure layer 26 of the adjacent semiconductor light emitting element 12 and reducing the intensity of the light extracted outside. The top portion 17A of the reflecting wall 17 has a convex shape. Therefore, the light emitted from the light emitting layers 21B and 26B can be guided to the inter-element region A1, that is, the region of the phosphor layer 18 on the inter-element region A1. Further, the light emitted from the light emitting layers 21B and 26B, reflected by the phosphor 18A of the phosphor layer 18 and returned to the element side can be guided to the region of the phosphor layer 18 on the inter-element region A1.

  More specifically, for example, the light L1 emitted from the light emitting layer 26B toward the reflecting wall 17 is reflected by the reflecting wall 17 toward the region A1 where no light is emitted between the elements. The light L2 emitted from the light emitting layer 21B and incident on the phosphor layer 18 and reflected by the phosphor 18A toward the reflection wall 17 is reflected by the reflection wall 17 toward the inter-element region A1. Since the top portion 17A of the reflecting wall 17 has a convex shape in cross section, the light that is reflected by the reflecting wall 17 and proceeds to the inter-element region A1, such as the light L1 and L2, increases. Accordingly, it is possible to extract a large amount of light from the inter-element region A1, and the formation of a dark portion of the light-emitting surface caused by the region where the light-emitting layer that is the inter-element region does not exist is suppressed.

  The top portion 17A of the reflecting wall 17 is a portion of the reflecting wall 17 that is closer to the support substrate 13 than the light emitting layer 21B in a side view. In other words, the reflecting wall 17 is more than the light emitting layers 21B and 26B. A convex shape is formed from the portion on the support substrate 13 side. Therefore, there is a high possibility that light traveling from the light emitting layer to the adjacent light emitting layer, for example, light emitted from the light emitting layer 21B toward the light emitting layer 26B, travels to the region of the phosphor layer 18 on the inter-element region A1.

  The reflecting wall 17 preferably has a height that does not exceed the surfaces of the semiconductor structure layers 21 and 26. When the reflection wall 17 is formed at a height exceeding the surface of the semiconductor structure layers 21 and 26, not only is the formation of a dark part corresponding to the inter-element region formed, but the reflection wall 17 is also formed of the semiconductor structure layer. This is because there is a possibility that reliability may be lowered, such as a conduction failure occurring in contact with the contact.

  Next, a method for manufacturing the semiconductor light emitting device 10 will be described with reference to FIGS. 3A to 3D are cross-sectional views illustrating a method for manufacturing the semiconductor light emitting device 10. In this example, first, as shown in FIG. 3A, a sapphire substrate was prepared as the growth substrate 29. Next, a semiconductor layer to be the semiconductor structure layers 21 and 26 was grown on the growth substrate 29. Next, a mask pattern was formed on the semiconductor layer by photolithography, and a contact electrode, a reflective layer, and a cap layer were formed as the p electrodes 23 and 28 by sputtering. Next, a mask pattern was formed on the semiconductor layer, and etching was performed to divide the semiconductor layer into semiconductor structure layers 21 and 26.

  Next, as shown in FIG. 3B, a Si substrate was prepared as the support substrate 13, and the insulating layer 14 was formed on the support substrate 13. Next, a mask pattern was formed on the insulating layer 14 by photolithography, and Ti, Pt, Au, and AuSn were formed as the connection metal layer OM and the bonding layers 15 and 16 by sputtering. Next, a mask pattern was formed on the insulating layer 14 by photolithography, and Ti, Au, and Rh were formed between the bonding layers 15 and 16 as a base structure 17P that later becomes the reflection wall 17. At this time, the base structure 17 </ b> P was formed so as to have a larger layer thickness than the bonding layers 15 and 16 and to extend between the side surfaces of the semiconductor structure layers 21 and 26.

  Next, as shown in FIG. 3C, the semiconductor structures 21 and 26 were bonded to the support substrate 13 by heating and pressure bonding the p electrodes 23 and 28 to the bonding layers 15 and 16, respectively. Subsequently, the growth substrate 29 was removed by a laser lift-off method. Specifically, the growth substrate 29 was irradiated with the laser beam LB. At this time, the base structure 17P was irradiated not only with the surfaces of the semiconductor structure layers 21 and 26 but also through the growth substrate 29. By irradiating the base structure 17P with the laser beam LB, the base structure 17P is aggregated and deformed by heat. Specifically, the base structure 17P has a convex shape in which the width is reduced, the height is increased, and the top section is rounded. In this way, the growth substrate 29 was removed and the reflection wall 17 was formed.

  Next, the semiconductor structure layers 21 and 26 were tilted by etching, a protective film PL was formed on the side surfaces thereof, and n electrodes 22 and 27 were formed on the semiconductor structure layers 21 and 26, respectively. Further, the external connection wiring OW and the element indirect group wiring CW were formed on the protective film PL, and the semiconductor structure layers 21 and 26 were connected in series. Subsequently, a phosphor layer 18 was formed so as to embed each wiring, the bonding layers 15 and 16, the reflection wall 17, and the semiconductor light emitting elements 11 and 12. Thus, the semiconductor light emitting device 10 was manufactured as shown in FIG.

  In this embodiment, the case where the semiconductor light emitting device is configured by two semiconductor light emitting elements has been described, but the semiconductor light emitting device may be formed by using three or more semiconductor light emitting elements. For example, when three semiconductor light emitting elements are juxtaposed in a line, two reflecting walls are formed, one in each of the regions between two adjacent semiconductor light emitting elements. Further, when a semiconductor light emitting device having a rectangular light distribution shape as a whole is arranged using four semiconductor light emitting elements so that each side is formed by two semiconductor light emitting elements, an inter-element region on each side In total, four reflecting walls are formed.

  In this embodiment, the case where the reflecting wall is formed at the same time as the growth substrate is removed has been described. However, the reflecting wall emits laser light to the base structure immediately after the base structure is formed on the support substrate. By irradiating, it is also possible to form the semiconductor structure layer before joining. Although the case where the reflection wall is formed by utilizing thermal condensation by laser light has been described, the reflection wall is formed by other means capable of applying heat to the base structure, such as heating the base structure. It may be formed. Further, the material of the reflecting wall and the base structure is preferably a material having a property of aggregating by heat, and for example, Au, Ag and Cu are preferably used. In particular, Au is preferable as a material of the reflecting wall because it is easy to aggregate and is chemically stable.

  FIG. 4A is a cross-sectional view showing the structure of the semiconductor light emitting device 30. Although the semiconductor light emitting device 30 includes the phosphor layer 18 as in the semiconductor light emitting device 10, the phosphor layer 18 is omitted for clarity of illustration. The semiconductor light emitting device 30 has a structure in which three semiconductor light emitting elements 31, 32, and 33 are arranged in a row on a support substrate 13. The semiconductor light emitting device 30 is different from the semiconductor light emitting device 10 in the structure of the semiconductor light emitting element and the structure of the reflection wall 36. First, the structure of the semiconductor light emitting element 31 will be described. The semiconductor light emitting device 31 has the same configuration as the semiconductor structure layer 21 of the semiconductor light emitting device 11, and the semiconductor light emitting devices 32 and 33 have the same semiconductor structure layer 41 as the semiconductor light emitting device 31. Specifically, the n-type semiconductor layer 41A, the light-emitting layer 41B, and the p-type semiconductor layer 41C of the semiconductor structure layer 41 are the same as the n-type semiconductor layer 21A, the light-emitting layer 21B, and the p-type semiconductor layer 21C of the semiconductor structure layer 21. It has a structure.

  The side surface 41 </ b> S facing the semiconductor light emitting element 32 adjacent to the semiconductor structure layer 31 is inclined so that the distance between the semiconductor structure layers increases toward the support substrate 13. That is, the distance between the semiconductor light emitting elements 31 and 32 is smaller on the lower surface than on the upper surface of the semiconductor structure layer 41. In this embodiment, the case where all the side surfaces of the semiconductor structure layer 41 are inclined, that is, the case where the semiconductor structure layer 41 is tapered toward the support substrate 13 will be described.

  As shown in FIG. 4A, the n-electrode 42 penetrates the p-type semiconductor layer 41C and the light emitting layer 41B from the surface of the semiconductor structure layer 41 on the support substrate 13, that is, the surface of the p-type semiconductor layer 41C. It is connected to the type semiconductor layer 41A. A contact electrode 43A and a reflective metal layer 43B formed so as to cover the contact electrode 43A are formed on the p-type semiconductor layer 41C as the p-electrode 43. The n electrode 42 and the p electrode 43 are insulated from each other by the insulating layer 35. A bonding layer 34 is formed on the support substrate 13. The bonding layer 34 is formed to be separated from each other directly below each of the semiconductor light emitting elements 31, 32, and 33. One of the separated bonding layers is connected to the n-electrode 42, and the other is connected to the connection electrode CM. Connected to the p-electrode 43. The bonding layer 34 has a configuration in which, among adjacent elements, the p-electrode of one element and the n-electrode of the other element are connected, and thereby each element is connected in series. In addition, a bonding region BA bonded to the bonding layer 34 is formed between the support substrate 13 and the semiconductor light emitting elements 31, 32, and 33.

  Next, a method for manufacturing the semiconductor light emitting device 30 will be described with reference to FIG. First, similarly to the semiconductor light emitting device 10 of Example 1, a semiconductor structure layer 41 is grown on a growth substrate (not shown), and a contact electrode 43A and a reflective electrode are formed as a p electrode 43 on the p-type semiconductor layer 41C. A metal layer 43B was formed. Note that a cap layer (not shown) that prevents migration of the metal material of the reflective metal layer 43B may be formed on the reflective metal layer 43B. The cap layer is provided so as to cover the entire reflective metal layer 43B. At this time, the p-electrode 43 is not formed on a part of the surface of the p-type semiconductor layer 41C. Next, the insulating layer 35 was formed so as to cover the entire surface of the p-type semiconductor layer 41C including the surface of the p-electrode 43. Next, in the region of the insulating layer 35 on the p-type semiconductor layer 41C where the p-electrode 43 is not formed, an opening that penetrates the insulating layer 35, the p-type semiconductor layer 41C, and the light emitting layer 41B and reaches the n-type semiconductor layer 41A. The n electrode 42 was formed in the opening. Next, an opening was formed in a region on the p-type semiconductor layer 41C where the p-electrode 43 was formed, and a connection electrode CM was formed in the opening. Thereafter, the support substrate 13 was prepared, and the bonding layers 34 were formed on the support substrate 13 so as to be separated from each other. Next, a base structure 36 </ b> P (FIG. 4C) that later becomes the reflection wall 36 was formed on the bonding layer 34. Subsequently, after forming a bonding layer (not shown) on the insulating layer 35, the semiconductor light emitting elements 31, 32, and 33 were bonded to the support substrate 13 by thermocompression bonding the bonding layer to the bonding layer 34. Thereafter, the growth substrate was removed by the laser lift-off method, and the reflection wall 36 was formed. Subsequently, a concavo-convex structure (not shown) was formed on the surface of the n-type semiconductor layer 41A by performing wet etching on the surface of the n-type semiconductor layer 41A. Next, the phosphor layer was formed to produce the semiconductor light emitting device 30.

  Next, the reflecting wall 36 in the present embodiment will be described with reference to FIG. FIG. 4B is a partial enlarged cross-sectional view in which a portion surrounded by a broken line in FIG. Similar to the reflection wall 17, the reflection wall 36 is formed on a region between the elements of the support substrate 13. The reflecting wall 36 is made of the same material as the reflecting wall 17 and has the same height and top shape (convex shape) as the reflecting wall 17. The reflection wall 36 has a height that exceeds the light emitting layer 41 </ b> B and does not exceed the semiconductor structure layer 41 in a side view, and has a width that is greater than the distance D <b> 1 between the adjacent semiconductor structure layers 41. .

  Specifically, the semiconductor structure layer 41 is formed so that the distance from the adjacent semiconductor structure layer toward the support substrate 13 increases. Accordingly, the distance D2 on the lower surface is greater than the distance D1 on the upper surface of the distance between the semiconductor structure layers 41. Here, for the sake of explanation, the distance D1 is referred to as the distance between the semiconductor structure layers 41, and the distance D2 is referred to as the distance between the junction regions BA. As shown in FIG. 4B, the reflecting wall 36 includes a top portion 36A, an intermediate portion 36B, and a bottom portion 36C. In addition, the width W1 of the intermediate portion 36B of the reflecting wall 36 is formed to be larger than the distance D1 between the adjacent semiconductor structure layers 41 and smaller than the distance D2 between the adjacent junction regions BA. The reflection wall 36 is formed so that the width gradually increases from the intermediate portion 36B toward the bottom portion 36C. The width W2 of the bottom portion 36C of the reflecting wall 36 is larger than the width W1 of the intermediate portion 36B.

  As shown in FIG. 4C, the reflecting wall 36 can be formed by forming the base structure 36 </ b> P and then irradiating the laser beam LB to cause thermal aggregation, as with the reflecting wall 17. . FIG. 4C is a cross-sectional view showing the shape of the base structure 36P immediately after the start of irradiation with the laser beam LB when the growth substrate 29 is removed after the elements are bonded to the support substrate 13. When the base structure 36P of the reflecting wall 36 is formed, the width is formed to be larger than the semiconductor structure interlayer distance D1 and smaller than the junction region distance D2. When the base structure 36 </ b> P formed in this way is viewed from a direction perpendicular to the semiconductor structure layer 41, the side portion in the adjacent direction (short direction) overlaps the semiconductor structure layer 41. Therefore, the laser beam is not directly irradiated to the end portion in the width direction, and only a part of the secondary laser beam is irradiated. Therefore, the agglomeration rate due to heat is smaller than that of the portion directly irradiated with other laser light, and the width of the bottom portion 26C is not easily reduced, and the reflection wall 36 having the above-described structure is formed.

  The reflection wall 36 has an intermediate portion 36B having a width W1 larger than the distance D1 between the adjacent semiconductor structure layers 41. Therefore, when viewed from the direction perpendicular to the semiconductor structure layer 41, the reflection wall 36 is formed in the entire region between the adjacent semiconductor structure layers 41. Therefore, the probability that light is guided to the inter-element region by the top portion 36A of the reflecting wall 36 is further increased, and the formation of the dark portion between the elements is greatly suppressed, and a light distribution shape that is uniform and free from luminance unevenness as a whole can be realized. it can. Further, the width W2 of the bottom portion 36C of the reflecting wall 36 is larger than the width W1 of the intermediate portion 36B. Therefore, more light can be reflected toward the phosphor layer, that is, the light extraction surface by the bottom portion 36C, and the light extraction efficiency can be improved. The bottom portion 36C of the reflecting wall 36 is formed so that the width gradually increases from the intermediate portion 36B toward the bottom portion 36C. When the bottom portion 36C has such a shape, light is easily reflected toward the phosphor layer 18 by the bottom portion 36C, and the light extraction effect is further improved.

  In the above-described embodiments, the case where the first semiconductor layer and the second semiconductor layer are an n-type semiconductor layer and a p-type semiconductor layer, respectively, has been described. However, the conductivity types of the first and second semiconductor layers are described. Is not limited to this. Each of the first and second semiconductor layers may have a conductivity type opposite to that of the above-described embodiment. Further, the structure of the semiconductor light emitting device is not limited to the case of the above-described embodiment. For example, the first semiconductor layer, the light emitting layer, and the second semiconductor layer may be grown on the growth substrate, and the growth substrate may be fixed on the support substrate. Further, the support substrate may be fixed on a mounting substrate on which wiring or the like is applied, and the semiconductor light emitting elements may be connected via the wiring on the mounting substrate.

  As described above, the reflecting wall extends in the direction along the side surface of the semiconductor light emitting element, and the top has a convex shape. Therefore, in a semiconductor light emitting device using a plurality of semiconductor light emitting elements, it is possible to provide a semiconductor light emitting device in which dark portions are not formed on the light emitting surface and luminance unevenness is greatly improved.

DESCRIPTION OF SYMBOLS 10 Semiconductor light-emitting device 11, 12 Semiconductor light-emitting element 13 Support substrate 17, 36 Reflective wall 17A, 36A Top part 36B Middle part 36C Bottom part 21, 26, 41 Semiconductor structure layer 21B, 26B, 41B Light emitting layer

Claims (5)

A plurality of semiconductor light-emitting elements comprising a semiconductor structure layer including a light-emitting layer;
A support substrate on which the plurality of semiconductor light emitting elements are juxtaposed,
A reflective wall formed on a region between the semiconductor light emitting elements adjacent to each other on the support substrate,
The reflection wall extends in a direction along a side surface of the semiconductor light emitting element, and a top portion has a convex shape.   The semiconductor light emitting device according to claim 1, wherein the reflection wall has a height exceeding the light emitting layer. The side surface facing the semiconductor light emitting element adjacent to the semiconductor structure layer is inclined so that the distance between the semiconductor structure layers increases toward the support substrate,
The reflective wall has a height not exceeding the semiconductor structure layer;
The semiconductor light emitting device according to claim 1, wherein the reflection wall has a width larger than a distance between adjacent semiconductor structure layers. The reflective wall has the top, middle and bottom;
The intermediate portion has a width larger than a distance between adjacent semiconductor structure layers;
The semiconductor light-emitting device according to claim 1, wherein the bottom portion has a larger width than the intermediate portion.   5. The semiconductor light emitting device according to claim 1, wherein the bottom portion is formed so that a width gradually increases from the intermediate portion toward the bottom portion.

Images