JP2015078318A - Wet agent for semiconductor and polishing composition - Google Patents
Wet agent for semiconductor and polishing composition Download PDFInfo
- Publication number
- JP2015078318A JP2015078318A JP2013216866A JP2013216866A JP2015078318A JP 2015078318 A JP2015078318 A JP 2015078318A JP 2013216866 A JP2013216866 A JP 2013216866A JP 2013216866 A JP2013216866 A JP 2013216866A JP 2015078318 A JP2015078318 A JP 2015078318A
- Authority
- JP
- Japan
- Prior art keywords
- water
- soluble polymer
- polymer
- polishing
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 76
- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 74
- 238000007127 saponification reaction Methods 0.000 claims abstract description 42
- 239000000178 monomer Substances 0.000 claims abstract description 33
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 31
- 239000012986 chain transfer agent Substances 0.000 claims abstract description 26
- 229920001567 vinyl ester resin Polymers 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 150000002148 esters Chemical group 0.000 claims abstract description 5
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 4
- 239000000080 wetting agent Substances 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 125000004432 carbon atom Chemical group C* 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 239000006061 abrasive grain Substances 0.000 claims description 13
- 239000003513 alkali Substances 0.000 claims description 13
- 239000008119 colloidal silica Substances 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 abstract description 13
- 238000009499 grossing Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 70
- 229920000642 polymer Polymers 0.000 description 55
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 45
- -1 acryl Chemical group 0.000 description 37
- 238000004519 manufacturing process Methods 0.000 description 35
- 238000006116 polymerization reaction Methods 0.000 description 35
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 229920002451 polyvinyl alcohol Polymers 0.000 description 15
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 239000004372 Polyvinyl alcohol Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 11
- 238000004458 analytical method Methods 0.000 description 10
- 238000005481 NMR spectroscopy Methods 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N butyric aldehyde Natural products CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical group OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 230000007062 hydrolysis Effects 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000007870 radical polymerization initiator Substances 0.000 description 5
- 239000005871 repellent Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- WYGWHHGCAGTUCH-ISLYRVAYSA-N V-65 Substances CC(C)CC(C)(C#N)\N=N\C(C)(C#N)CC(C)C WYGWHHGCAGTUCH-ISLYRVAYSA-N 0.000 description 4
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 4
- 125000005011 alkyl ether group Chemical group 0.000 description 4
- 125000002947 alkylene group Chemical group 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 4
- 150000002978 peroxides Chemical class 0.000 description 4
- 230000002940 repellent Effects 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000006359 acetalization reaction Methods 0.000 description 3
- 239000003377 acid catalyst Substances 0.000 description 3
- 125000003158 alcohol group Chemical group 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 150000007514 bases Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 125000006755 (C2-C20) alkyl group Chemical group 0.000 description 2
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 description 2
- OZCMOJQQLBXBKI-UHFFFAOYSA-N 1-ethenoxy-2-methylpropane Chemical compound CC(C)COC=C OZCMOJQQLBXBKI-UHFFFAOYSA-N 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- NSOAQRMLVFRWIT-UHFFFAOYSA-N 1-ethenoxydecane Chemical compound CCCCCCCCCCOC=C NSOAQRMLVFRWIT-UHFFFAOYSA-N 0.000 description 2
- YAOJJEJGPZRYJF-UHFFFAOYSA-N 1-ethenoxyhexane Chemical compound CCCCCCOC=C YAOJJEJGPZRYJF-UHFFFAOYSA-N 0.000 description 2
- MIMKRVLJPMYKID-UHFFFAOYSA-N 1-ethenoxynonane Chemical compound CCCCCCCCCOC=C MIMKRVLJPMYKID-UHFFFAOYSA-N 0.000 description 2
- XXCVIFJHBFNFBO-UHFFFAOYSA-N 1-ethenoxyoctane Chemical compound CCCCCCCCOC=C XXCVIFJHBFNFBO-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- PGYJSURPYAAOMM-UHFFFAOYSA-N 2-ethenoxy-2-methylpropane Chemical compound CC(C)(C)OC=C PGYJSURPYAAOMM-UHFFFAOYSA-N 0.000 description 2
- GNUGVECARVKIPH-UHFFFAOYSA-N 2-ethenoxypropane Chemical compound CC(C)OC=C GNUGVECARVKIPH-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 2
- AMIMRNSIRUDHCM-UHFFFAOYSA-N Isopropylaldehyde Chemical compound CC(C)C=O AMIMRNSIRUDHCM-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 2
- 150000003926 acrylamides Chemical class 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 125000000278 alkyl amino alkyl group Chemical group 0.000 description 2
- 125000003282 alkyl amino group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical group O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- KVFDZFBHBWTVID-UHFFFAOYSA-N cyclohexanecarbaldehyde Chemical group O=CC1CCCCC1 KVFDZFBHBWTVID-UHFFFAOYSA-N 0.000 description 2
- KSMVZQYAVGTKIV-UHFFFAOYSA-N decanal Chemical compound CCCCCCCCCC=O KSMVZQYAVGTKIV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 125000004663 dialkyl amino group Chemical group 0.000 description 2
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- JARKCYVAAOWBJS-UHFFFAOYSA-N hexanal Chemical compound CCCCCC=O JARKCYVAAOWBJS-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- GYHFUZHODSMOHU-UHFFFAOYSA-N nonanal Chemical compound CCCCCCCCC=O GYHFUZHODSMOHU-UHFFFAOYSA-N 0.000 description 2
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 2
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 229920001290 polyvinyl ester Polymers 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 2
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 2
- KJRCEJOSASVSRA-UHFFFAOYSA-N propane-2-thiol Chemical compound CC(C)S KJRCEJOSASVSRA-UHFFFAOYSA-N 0.000 description 2
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 239000004711 α-olefin Substances 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- 125000006373 (C2-C10) alkyl group Chemical group 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- WAEOXIOXMKNFLQ-UHFFFAOYSA-N 1-methyl-4-prop-2-enylbenzene Chemical group CC1=CC=C(CC=C)C=C1 WAEOXIOXMKNFLQ-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- AVTLBBWTUPQRAY-UHFFFAOYSA-N 2-(2-cyanobutan-2-yldiazenyl)-2-methylbutanenitrile Chemical compound CCC(C)(C#N)N=NC(C)(CC)C#N AVTLBBWTUPQRAY-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- UCJMHYXRQZYNNL-UHFFFAOYSA-N 2-Ethyl-1-hexanethiol Chemical compound CCCCC(CC)CS UCJMHYXRQZYNNL-UHFFFAOYSA-N 0.000 description 1
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 1
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- LGYNIFWIKSEESD-UHFFFAOYSA-N 2-ethylhexanal Chemical compound CCCCC(CC)C=O LGYNIFWIKSEESD-UHFFFAOYSA-N 0.000 description 1
- KSTAKRCVPORMCA-UHFFFAOYSA-N 2-methylheptane-2-thiol Chemical compound CCCCCC(C)(C)S KSTAKRCVPORMCA-UHFFFAOYSA-N 0.000 description 1
- VLZUBQRSSRDWOK-UHFFFAOYSA-N 2-methylhexane-2-thiol Chemical compound CCCCC(C)(C)S VLZUBQRSSRDWOK-UHFFFAOYSA-N 0.000 description 1
- RTEZVHMDMFEURJ-UHFFFAOYSA-N 2-methylpentan-2-yl 2,2-dimethylpropaneperoxoate Chemical compound CCCC(C)(C)OOC(=O)C(C)(C)C RTEZVHMDMFEURJ-UHFFFAOYSA-N 0.000 description 1
- LMDDHLWHSDZGIH-UHFFFAOYSA-N 2-methyltridecane-2-thiol Chemical compound CCCCCCCCCCCC(C)(C)S LMDDHLWHSDZGIH-UHFFFAOYSA-N 0.000 description 1
- BIISIZOQPWZPPS-UHFFFAOYSA-N 2-tert-butylperoxypropan-2-ylbenzene Chemical compound CC(C)(C)OOC(C)(C)C1=CC=CC=C1 BIISIZOQPWZPPS-UHFFFAOYSA-N 0.000 description 1
- DSSAWHFZNWVJEC-UHFFFAOYSA-N 3-(ethenoxymethyl)heptane Chemical compound CCCCC(CC)COC=C DSSAWHFZNWVJEC-UHFFFAOYSA-N 0.000 description 1
- BJOWTLCTYPKRRU-UHFFFAOYSA-N 3-ethenoxyoctane Chemical compound CCCCCC(CC)OC=C BJOWTLCTYPKRRU-UHFFFAOYSA-N 0.000 description 1
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 1
- HOYBEZVNIJFLHG-UHFFFAOYSA-N 3-methylundecane-3-thiol Chemical compound CCCCCCCCC(C)(S)CC HOYBEZVNIJFLHG-UHFFFAOYSA-N 0.000 description 1
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- 238000001914 filtration Methods 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
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- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- ABNPJVOPTXYSQW-UHFFFAOYSA-N hexane-2-thiol Chemical compound CCCCC(C)S ABNPJVOPTXYSQW-UHFFFAOYSA-N 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
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- 239000003456 ion exchange resin Substances 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
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- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Chemical group CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- GEKDEMKPCKTKEC-UHFFFAOYSA-N tetradecane-1-thiol Chemical compound CCCCCCCCCCCCCCS GEKDEMKPCKTKEC-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- IPBROXKVGHZHJV-UHFFFAOYSA-N tridecane-1-thiol Chemical compound CCCCCCCCCCCCCS IPBROXKVGHZHJV-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- CCIDWXHLGNEQSL-UHFFFAOYSA-N undecane-1-thiol Chemical compound CCCCCCCCCCCS CCIDWXHLGNEQSL-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymerisation Methods In General (AREA)
Abstract
Description
本発明は、半導体用濡れ剤及び研磨用組成物に関し、さらに詳しくは、シリコンウェーハの仕上げ研磨等に用いられる半導体用濡れ剤及び研磨用組成物に関する。 The present invention relates to a wetting agent for semiconductors and a polishing composition, and more particularly to a wetting agent for semiconductors and a polishing composition used for final polishing of a silicon wafer.
パソコン及び携帯電話等の情報通信機器、並びに、デジタルカメラ及びテレビ等のデジタル家電製品では、シリコンウェーハを基板とする半導体デバイスが広く用いられている。近年の半導体チップの高集積化、大容量化に伴い、半導体デバイスの加工精度は微細化の一途をたどっており、デバイス形成前のウェーハに対しては、その平滑性、及びキズ等の欠陥を有さないいわゆる無傷性の要求がますます厳しいものとなっている。 Semiconductor devices using a silicon wafer as a substrate are widely used in information communication devices such as personal computers and mobile phones, and digital home appliances such as digital cameras and televisions. As semiconductor chips have been highly integrated and increased in capacity in recent years, the processing accuracy of semiconductor devices has been continually miniaturized. Wafers prior to device formation have defects such as smoothness and scratches. The so-called intactness requirement that does not exist is becoming increasingly severe.
ウェーハの平滑化技術としては、ＣＭＰ（ケミカルメカニカルポリッシング：化学機械研磨）と呼ばれる研磨プロセスがよく用いられている。ＣＭＰによる平滑化処理では、微細な砥粒と塩基性化合物を含有した研磨用組成物が使用される。この研磨用組成物を研磨パッド表面に供給しながら、圧接した研磨パッドと被研磨物であるウェーハとを相対移動させて表面を研磨する。このとき、砥粒によるメカニカル研磨と、塩基性化合物によるケミカル研磨とが同時に進行することにより、広範囲にわたりウェーハ表面を高精度に平滑化することができる。
一般に、ＣＭＰによるウェーハ研磨では、３〜４段階の研磨を行うことにより、高精度の平滑化を実現している。第１段階および第２段階に行う１次研磨および２次研磨では、表面の平滑化を主な目的としていることから、研磨速度が重要視される傾向がある。これに対し、第３段階または第４段階の仕上げ研磨では、ウェーハ表面のヘイズ及びＣＯＰ（Ｃｒｙｓｔａｌ Ｏｒｉｇｉｎａｔｅｄ Ｐａｒｔｉｃｌｅｓ；結晶欠陥）の抑制、更には凝集した研磨砥粒、研磨パッド屑、研磨により除去されたシリコン粉といったいわゆるパーティクルの付着による汚染防止などについても重要視される。
As a wafer smoothing technique, a polishing process called CMP (Chemical Mechanical Polishing) is often used. In the smoothing treatment by CMP, a polishing composition containing fine abrasive grains and a basic compound is used. While supplying this polishing composition to the surface of the polishing pad, the surface is polished by relatively moving the polishing pad in pressure contact with the wafer as the object to be polished. At this time, since the mechanical polishing by the abrasive grains and the chemical polishing by the basic compound proceed simultaneously, the wafer surface can be smoothed over a wide range with high accuracy.
Generally, in wafer polishing by CMP, high-precision smoothing is realized by performing polishing in 3 to 4 stages. In primary polishing and secondary polishing performed in the first stage and the second stage, since the main purpose is to smooth the surface, the polishing rate tends to be regarded as important. On the other hand, in the final polishing in the third stage or the fourth stage, the haze and COP (Crystal Originated Particles) of the wafer surface are suppressed, and further, agglomerated abrasive grains, polishing pad debris, and polishing are removed. Emphasis is also placed on the prevention of contamination caused by the adhesion of so-called particles such as silicon powder.
上記仕上げ研磨に使用される研磨用組成物としては、研磨用組成物中に水溶性高分子化合物を添加する方法が有効であることが知られている。特許文献１には、分子量１０万以上の水溶解性の高分子化合物及び水溶解性の塩類等を含有してなる研磨用組成物が開示されている。また、特許文献２には、水溶性高分子化合物を含む研磨用組成物が記載され、該水溶性高分子化合物として、セルロース誘導体又はポリビニルアルコールを用いることができる旨が示されている。 As a polishing composition used for the above-mentioned finish polishing, it is known that a method of adding a water-soluble polymer compound to the polishing composition is effective. Patent Document 1 discloses a polishing composition comprising a water-soluble polymer compound having a molecular weight of 100,000 or more and water-soluble salts. Patent Document 2 describes a polishing composition containing a water-soluble polymer compound, and indicates that a cellulose derivative or polyvinyl alcohol can be used as the water-soluble polymer compound.
しかし、特許文献１に記載の発明では、用いられる水溶解性高分子化合物のウェーハ表面への吸着性が十分ではなく、仕上げ研磨後のウェーハ表面のヘイズ及びＣＯＰが満足できるものではなかった。また、研磨性向上の目的で添加される水溶解性の塩類もシリカ砥粒の分散性の観点からは好ましくないものであった。シリカ砥粒の分散性が不十分な場合、仕上げ研磨後のウェーハ表面の表面粗さが大きくなり、さらにはスクラッチ傷が発生するなどの問題が起こり易くなる傾向がある。
また、特許文献２に記載のセルロース誘導体又はポリビニルアルコールも同様にウェーハ表面に対する吸着性は十分なものではなかった。加えて、特許文献２の実施例では、具体的な水溶性高分子化合物としてヒドロキシエチルセルロースを用いた実験例が開示されているが、天然物由来の化合物であるために品質のばらつきが大きいという問題もあった。
However, in the invention described in Patent Document 1, the water-soluble polymer compound used is not sufficiently adsorbed to the wafer surface, and the haze and COP of the wafer surface after finish polishing are not satisfactory. Further, water-soluble salts added for the purpose of improving the polishing properties are also not preferable from the viewpoint of dispersibility of the silica abrasive grains. If the dispersibility of the silica abrasive grains is insufficient, the surface roughness of the wafer surface after finish polishing tends to increase, and problems such as scratches tend to occur.
Similarly, the cellulose derivative or polyvinyl alcohol described in Patent Document 2 is not sufficiently adsorbable on the wafer surface. In addition, in the Example of Patent Document 2, an experimental example using hydroxyethyl cellulose as a specific water-soluble polymer compound is disclosed, but since it is a compound derived from a natural product, there is a problem in that quality variation is large. There was also.
本発明は、このような事情に鑑みてなされたものであり、シリコンウェーハの表面研磨において、ウェーハ表面を高精度に平滑化し、ＣＯＰの抑制に有効な半導体用濡れ剤及び研磨用組成物を提供することを課題とするものである。 The present invention has been made in view of such circumstances, and provides a wetting agent for semiconductor and a polishing composition effective in smoothing the wafer surface with high accuracy and effective in suppressing COP in surface polishing of a silicon wafer. It is an object to do.
上記課題を解決するために鋭意検討した結果、本発明者らは、特定構造の連鎖移動剤存在下で得られたビニルエステル系ポリマーを鹸化して得られる水溶性高分子を含む半導体用濡れ剤を用いることにより、研磨後のウェーハ表面の平滑化及びＣＯＰ抑制に効果を奏することを見出し、本発明を完成するに至った。 As a result of diligent studies to solve the above problems, the present inventors have found that a wetting agent for semiconductors containing a water-soluble polymer obtained by saponifying a vinyl ester polymer obtained in the presence of a chain transfer agent having a specific structure. As a result, it has been found that there is an effect in smoothing the wafer surface after polishing and suppressing COP, and the present invention has been completed.
本発明は以下の通りである。
〔１〕炭素数２〜２０のアルキル基を有する連鎖移動剤の存在下、ビニルエステル化合物を７０〜１００ｍｏｌ％含む単量体混合物を重合した後、ビニルエステル単位に対する鹸化度が９０〜１００ｍｏｌ％となるように鹸化して得られる水溶性高分子であって、数平均分子量が１，０００〜５０，０００である水溶性高分子を含む半導体用濡れ剤。
〔２〕前記連鎖移動剤が、炭素数４〜２０のアルキル基を有するものであることを特徴とする前記〔１〕に記載の半導体用濡れ剤。
〔３〕前記連鎖移動剤の使用量が、前記単量体混合物１００質量部に対し、０．１〜１０質量部であることを特徴とする前記〔１〕又は〔２〕に記載の半導体用濡れ剤。
〔４〕前記〔１〕〜〔３〕のいずれかに記載の半導体用濡れ剤、水、砥粒及びアルカリ化合物を含んでなることを特徴とする研磨用組成物。
〔５〕前記砥粒がコロイダルシリカである前記〔４〕に記載の研磨用組成物。
〔６〕前記〔４〕又は〔５〕のいずれかの研磨用組成物からなるシリコンウェーハの仕上げ研磨用組成物。
The present invention is as follows.
[1] After polymerizing a monomer mixture containing 70 to 100 mol% of a vinyl ester compound in the presence of a chain transfer agent having an alkyl group having 2 to 20 carbon atoms, the saponification degree with respect to the vinyl ester unit is 90 to 100 mol%. A wetting agent for a semiconductor comprising a water-soluble polymer obtained by saponification so as to have a number-average molecular weight of 1,000 to 50,000.
[2] The semiconductor wetting agent as described in [1] above, wherein the chain transfer agent has an alkyl group having 4 to 20 carbon atoms.
[3] The semiconductor transfer device according to [1] or [2], wherein the chain transfer agent is used in an amount of 0.1 to 10 parts by mass with respect to 100 parts by mass of the monomer mixture. Wetting agent.
[4] A polishing composition comprising the semiconductor wetting agent according to any one of [1] to [3], water, abrasive grains, and an alkali compound.
[5] The polishing composition according to [4], wherein the abrasive grains are colloidal silica.
[6] A composition for polishing a silicon wafer, comprising the polishing composition according to any one of [4] or [5].
本発明の半導体用濡れ剤は、研磨後のウェーハ表面への吸着性に優れるものである。このため、該半導体用濡れ剤を含む研磨用組成物を用いることにより、研磨後のウェーハ表面の平滑性を高め、かつ、耐エッチング性に優れることからＣＯＰを抑制することが可能となる。さらに、シリカの分散性も良好であることから、凝集したシリカ砥粒による擦傷や表面荒れも少なく、無傷性に優れたウェーハ表面を得ることができる。 The wetting agent for semiconductors of the present invention has excellent adsorptivity to the wafer surface after polishing. For this reason, by using the polishing composition containing the semiconductor wetting agent, it is possible to increase the smoothness of the polished wafer surface and to suppress the COP because of excellent etching resistance. Furthermore, since the dispersibility of silica is also good, there are few scratches and surface roughness due to the agglomerated silica abrasive grains, and a wafer surface with excellent scratch resistance can be obtained.
以下、本発明を詳しく説明する。尚、本明細書において、「（メタ）アクリル」とは、アクリル及びメタクリルを意味し、「（メタ）アクリレート」とは、アクリレート及びメタクリレートを意味する。また、「（メタ）アクリロイル基」とは、アクリロイル基及びメタクリロイル基を意味する。 The present invention will be described in detail below. In the present specification, “(meth) acryl” means acryl and methacryl, and “(meth) acrylate” means acrylate and methacrylate. The “(meth) acryloyl group” means an acryloyl group and a methacryloyl group.
＜水溶性高分子＞
本発明の半導体用濡れ剤は、炭素数２〜２０のアルキル基を有する連鎖移動剤の存在下、ビニルエステル化合物を７０〜１００ｍｏｌ％含む単量体混合物を重合した後、ビニルエステル単位に対する鹸化度が９０〜１００ｍｏｌ％となるように鹸化して得られる水溶性高分子を含む。
このため、前記水溶性高分子は、以下の式（１）で表される構造単位を主体とし、その末端に炭素数２〜２０のアルキル基が導入された構造を有するものとなる。
［−ＣＨ2ＣＨ（ＯＨ）−］ （１）
尚、本発明では、前記単量体混合物は、ビニルエステル化合物の２種以上からなるものであってもよいし、ビニルエステル化合物とその他の単量体を含むものであってもよい。さらに、１種類のビニルエステル化合物のみからなるものも含まれるものとする。
<Water-soluble polymer>
The wetting agent for a semiconductor of the present invention is obtained by polymerizing a monomer mixture containing 70 to 100 mol% of a vinyl ester compound in the presence of a chain transfer agent having an alkyl group having 2 to 20 carbon atoms, and then saponifying degree with respect to the vinyl ester unit. Contains a water-soluble polymer obtained by saponification so as to be 90 to 100 mol%.
For this reason, the water-soluble polymer has a structure in which a structural unit represented by the following formula (1) is mainly used and an alkyl group having 2 to 20 carbon atoms is introduced at the terminal thereof.
[—CH 2 CH (OH) —] (1)
In the present invention, the monomer mixture may be composed of two or more kinds of vinyl ester compounds, or may contain a vinyl ester compound and other monomers. Furthermore, what consists only of one type of vinyl ester compound shall also be included.
ビニルエステル化合物としては、具体的には、ギ酸ビニル、酢酸ビニル、プロピオン酸ビニル、バレリン酸ビニル、カプリン酸ビニル、ラウリン酸ビニル、ステアリン酸ビニル、安息香酸ビニル、ピパリン酸ビニル及びバーサチック酸ビニル等が挙げられ、これらの内の１種又は２種以上を併用して用いることができる。上記の内でも、重合安定性が良好であることから酢酸ビニルが好ましい。
本発明では、ビニルエステル化合物に由来する構造単位は、鹸化されることにより前記式（１）で表されるポリビニルアルコール構造単位へ変換される。式（１）で表される構造単位は、ウェーハへの吸着性が良好であるとともに、水溶性高分子の水への溶解性を確保する点で重要である。
Specific examples of the vinyl ester compound include vinyl formate, vinyl acetate, vinyl propionate, vinyl valelate, vinyl caprate, vinyl laurate, vinyl stearate, vinyl benzoate, vinyl piperate and vinyl versatate. 1 or 2 or more of them can be used in combination. Of these, vinyl acetate is preferred because of good polymerization stability.
In the present invention, the structural unit derived from the vinyl ester compound is converted to the polyvinyl alcohol structural unit represented by the formula (1) by saponification. The structural unit represented by the formula (1) is important in that the adsorptivity to the wafer is good and the solubility of the water-soluble polymer in water is ensured.
ビニルエステル化合物は、全単量体混合物を基準として７０〜１００ｍｏｌ％の範囲で用いられることが必要であり、７５〜９９ｍｏｌ％の範囲が好ましく、８０〜９８ｍｏｌ％の範囲がより好ましい。ビニルエステル化合物の使用量が７０ｍｏｌ％未満の場合、鹸化後の重合体の水溶解性が十分でなく、本発明の半導体用濡れ剤の効果が得られない場合がある。
ここで、上記全単量体混合物とは、必ずしも重合に供する全単量体を予め混合しておくことを要さない。すなわち、重合に供する全単量体を予め混合したものでもよいし、例えば、各単量体を混合せずに別々に添加した場合、又は、各単量体の一部のみを混合して残りを単独で添加するような場合等も含むものとする。
The vinyl ester compound needs to be used in the range of 70 to 100 mol% based on the total monomer mixture, preferably in the range of 75 to 99 mol%, and more preferably in the range of 80 to 98 mol%. When the amount of the vinyl ester compound used is less than 70 mol%, the water solubility of the polymer after saponification is not sufficient, and the effect of the wetting agent for semiconductors of the present invention may not be obtained.
Here, the total monomer mixture does not necessarily require that all monomers used for polymerization are mixed in advance. That is, all monomers used for polymerization may be mixed in advance, for example, when each monomer is added separately without mixing, or only a part of each monomer is mixed and left This includes the case where is added alone.
本発明では、ビニルエステル化合物以外に、これと共重合可能なその他の単量体を用いても良い。その他の単量体は特に限定されるものではないが、例えば、メチルビニルエーテル、エチルビニルエーテル、ｎ−プロピルビニルエーテル、イソプロピルビニルエーテル、ｎ−ブチルビニルエーテル、イソブチルビニルエーテル、ｔ−ブチルビニルエーテル、ｎ−ヘキシルビニルエーテル、２−エチルヘキシルビニルエーテル、ｎ−オクチルビニルエーテル、ｎ−ノニルビニルエーテル及びｎ−デシルビニルエーテル等の炭素数１〜１０のアルキル基を有するアルキルビニルエーテル類；スチレン、ビニルトルエン及びビニルキシレン等の芳香族ビニル化合物；（メタ）アクリル酸メチル、（メタ）アクリル酸エチル、（メタ）アクリル酸ブチル及び（メタ）アクリル酸２−エチルヘキシル等の（メタ）アクリル酸アルキルエステル類；（メタ）アクリル酸、クロトン酸、マレイン酸、イタコン酸及びフマル酸等の不飽和酸並びにこれらのアルキルエステル類；無水マレイン酸等の不飽和酸無水物；２−アクリルアミド−２−メチルプロパンスルホン酸及びその塩類等のスルホン酸基含有単量体；メチル（メタ）アクリルアミド、エチル（メタ）アクリルアミド、ｎ−プロピル（メタ）アクリルアミド、イソプロピル（メタ）アクリルアミド、ｎ−ブチル（メタ）アクリルアミド及び２−エチルヘキシル（メタ）アクリルアミド等のＮ−アルキル（メタ）アクリルアミド；メチルアミノプロピル（メタ）アクリルアミド、ジメチルアミノプロピル（メタ）アクリルアミド、エチルアミノプロピル（メタ）アクリルアミド及びジエチルアミノプロピル（メタ）アクリルアミド等の（ジ）アルキルアミノアルキルアミド類；メチルアミノエチル（メタ）アクリレート、ジメチルアミノエチル（メタ）アクリレート、エチルアミノエチル（メタ）アクリレート及びジエチルアミノエチル（メタ）アクリレート等の（ジ）アルキルアミノアルキル（メタ）アクリレート類；エチレン、プロピレン、ブチレン等のα―オレフィン類等が挙げられ、これらの内の１種又は２種以上を用いることができる。
水溶性高分子におけるこれらの単量体の使用量は、０〜３０ｍｏｌ％の範囲であり、１〜２５ｍｏｌ％の範囲が好ましく、２〜２０ｍｏｌ％の範囲がより好ましい。その他の単量体の使用量が３０ｍｏｌ％を超えると、前記ビニルエステル化合物の使用量が７０ｍｏｌ％未満となるため、水への溶解性が十分でなく、本発明の半導体用濡れ剤の効果が得られない場合がある。
In the present invention, in addition to the vinyl ester compound, other monomers copolymerizable therewith may be used. Other monomers are not particularly limited. For example, methyl vinyl ether, ethyl vinyl ether, n-propyl vinyl ether, isopropyl vinyl ether, n-butyl vinyl ether, isobutyl vinyl ether, t-butyl vinyl ether, n-hexyl vinyl ether, 2 -Alkyl vinyl ethers having an alkyl group having 1 to 10 carbon atoms such as ethylhexyl vinyl ether, n-octyl vinyl ether, n-nonyl vinyl ether and n-decyl vinyl ether; aromatic vinyl compounds such as styrene, vinyl toluene and vinyl xylene; (Meth) acrylic acid alkyl esters such as methyl acrylate, ethyl (meth) acrylate, butyl (meth) acrylate and 2-ethylhexyl (meth) acrylate; ) Unsaturated acids such as acrylic acid, crotonic acid, maleic acid, itaconic acid and fumaric acid and their alkyl esters; unsaturated acid anhydrides such as maleic anhydride; 2-acrylamido-2-methylpropanesulfonic acid and its Sulfonic acid group-containing monomers such as salts; methyl (meth) acrylamide, ethyl (meth) acrylamide, n-propyl (meth) acrylamide, isopropyl (meth) acrylamide, n-butyl (meth) acrylamide and 2-ethylhexyl (meta ) N-alkyl (meth) acrylamides such as acrylamide; (di) such as methylaminopropyl (meth) acrylamide, dimethylaminopropyl (meth) acrylamide, ethylaminopropyl (meth) acrylamide and diethylaminopropyl (meth) acrylamide Alkylaminoalkylamides; (di) alkylaminoalkyl (meth) acrylates such as methylaminoethyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, ethylaminoethyl (meth) acrylate and diethylaminoethyl (meth) acrylate; Examples include α-olefins such as ethylene, propylene, and butylene, and one or more of these can be used.
The amount of these monomers used in the water-soluble polymer is in the range of 0 to 30 mol%, preferably in the range of 1 to 25 mol%, more preferably in the range of 2 to 20 mol%. When the amount of other monomers used exceeds 30 mol%, the amount of vinyl ester compound used is less than 70 mol%, so that the solubility in water is not sufficient, and the effect of the wetting agent for semiconductors of the present invention is effective. It may not be obtained.
その他の単量体の内、以下の式（２）で表される構造単位を与えるものは、ウェーハへの吸着性が向上する点で好ましい。
［−ＣＨ2ＣＨ（Ｘ）−］ （２）
〔式（２）中、Ｘは炭素数１〜１０のアルキル基を有するアルキルエーテル基、炭素数６〜１０のアリール基、式（３）若しくは式（４）で表される有機基、炭素数１〜１０のアルキル基を有するウレタンアルキル基、炭素数３以上のアルキレン基を有するアルキレンオキシド基、水素又は炭素数１〜３のアルキル基を表す。〕
−Ｃ（＝Ｏ）Ｏ−（ＣＨ2）m−Ｒ1 （３）
〔式（３）中、Ｒ1は炭素数１〜８のアルキル基、炭素数１〜４のアルキル基を有するアルキルアミノ基又はジアルキルアミノ基、ｍは０〜３の整数を表す。〕
−Ｃ（＝Ｏ）ＮＨ−（ＣＨ2）n−Ｒ2 （４）
〔式（４）中、Ｒ2は炭素数１〜８のアルキル基、炭素数１〜４のアルキル基を有するアルキルアミノ基又はジアルキルアミノ基、ｎは０〜３の整数を表す。〕
Among the other monomers, those that give a structural unit represented by the following formula (2) are preferred in that the adsorptivity to the wafer is improved.
[—CH 2 CH (X) —] (2)
[In Formula (2), X is an alkyl ether group having an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an organic group represented by Formula (3) or Formula (4), and the number of carbon atoms. A urethane alkyl group having 1 to 10 alkyl groups, an alkylene oxide group having an alkylene group having 3 or more carbon atoms, hydrogen, or an alkyl group having 1 to 3 carbon atoms is represented. ]
-C (= O) O- (CH 2) m -R 1 (3)
[In Formula (3), R 1 represents an integer of alkylamino group or a dialkylamino group, m is 0 to 3 with an alkyl group, an alkyl group having 1 to 4 carbon atoms having 1 to 8 carbon atoms. ]
-C (= O) NH- (CH 2) n -R 2 (4)
[In Formula (4), R 2 represents an alkyl group having 1 to 8 carbon atoms, an alkylamino group having a C 1 to 4 alkyl group or a dialkylamino group, and n represents an integer of 0 to 3. ]
式（２）において、Ｘは炭素数１〜１０のアルキル基を有するアルキルエーテル基、炭素数６〜１０のアリール基、式（３）若しくは式（４）で表される有機基、炭素数１〜１０のアルキル基を有するウレタンアルキル基、炭素数３以上のアルキレン基を有するアルキレンオキシド基、水素又は炭素数１〜３のアルキル基である。Ｘは、これらの内の１種でもよく、又２種以上を併用してもよい。上記の内、ウェーハに対する吸着性が良好であり、かつ、対応する原料が入手し易い点から、炭素数１〜１０のアルキル基を有するアルキルエーテル基、式（３）若しくは式（４）で表される有機基が好ましい。また、耐アルカリ加水分解性が良好である点から炭素数１〜１０のアルキル基を有するアルキルエーテル基がさらに好ましい。 In Formula (2), X is an alkyl ether group having an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an organic group represented by Formula (3) or Formula (4), and 1 carbon atom. A urethane alkyl group having 10 to 10 alkyl groups, an alkylene oxide group having 3 or more alkylene groups, hydrogen, or an alkyl group having 1 to 3 carbon atoms. X may be one of these, or two or more may be used in combination. Among the above, from the point that the adsorptivity to the wafer is good and the corresponding raw material is easily available, the alkyl ether group having an alkyl group having 1 to 10 carbon atoms, represented by formula (3) or formula (4) Preferred are organic groups. Moreover, the alkyl ether group which has a C1-C10 alkyl group from a point with favorable alkali hydrolysis resistance is further more preferable.
式（２）で表される構造単位を与える単量体の具体的な化合物としては、メチルビニルエーテル、エチルビニルエーテル、ｎ−プロピルビニルエーテル、イソプロピルビニルエーテル、ｎ−ブチルビニルエーテル、イソブチルビニルエーテル、ｔ−ブチルビニルエーテル、ｎ−ヘキシルビニルエーテル、２−エチルヘキシルビニルエーテル、ｎ−オクチルビニルエーテル、ｎ−ノニルビニルエーテル及びｎ−デシルビニルエーテル等の炭素数１〜１０のアルキル基を有するアルキルビニルエーテル類；スチレン、ビニルトルエン及びビニルキシレン等の芳香族ビニル化合物；メチル（メタ）アクリルアミド、エチル（メタ）アクリルアミド、ｎ−プロピル（メタ）アクリルアミド、イソプロピル（メタ）アクリルアミド、ｎ−ブチル（メタ）アクリルアミド及び２−エチルヘキシル（メタ）アクリルアミド等のＮ−アルキル（メタ）アクリルアミド；メチルアミノプロピル（メタ）アクリルアミド、ジメチルアミノプロピル（メタ）アクリルアミド、エチルアミノプロピル（メタ）アクリルアミド及びジエチルアミノプロピル（メタ）アクリルアミド等の（ジ）アルキルアミノアルキルアミド類；メチルアミノエチル（メタ）アクリレート、ジメチルアミノエチル（メタ）アクリレート、エチルアミノエチル（メタ）アクリレート及びジエチルアミノエチル（メタ）アクリレート等の（ジ）アルキルアミノアルキル（メタ）アクリレート類；エチレン、プロピレン、ブチレン等のα―オレフィン類等が挙げられる。 Specific examples of the monomer that gives the structural unit represented by the formula (2) include methyl vinyl ether, ethyl vinyl ether, n-propyl vinyl ether, isopropyl vinyl ether, n-butyl vinyl ether, isobutyl vinyl ether, t-butyl vinyl ether, Alkyl vinyl ethers having an alkyl group having 1 to 10 carbon atoms such as n-hexyl vinyl ether, 2-ethylhexyl vinyl ether, n-octyl vinyl ether, n-nonyl vinyl ether and n-decyl vinyl ether; fragrances such as styrene, vinyl toluene and vinyl xylene Group vinyl compounds; methyl (meth) acrylamide, ethyl (meth) acrylamide, n-propyl (meth) acrylamide, isopropyl (meth) acrylamide, n-butyl (meth) N-alkyl (meth) acrylamides such as chloramide and 2-ethylhexyl (meth) acrylamide; methylaminopropyl (meth) acrylamide, dimethylaminopropyl (meth) acrylamide, ethylaminopropyl (meth) acrylamide, and diethylaminopropyl (meth) acrylamide (Di) alkylaminoalkylamides of (di) alkylaminoalkyl (meth) acrylate such as methylaminoethyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, ethylaminoethyl (meth) acrylate and diethylaminoethyl (meth) acrylate ) Acrylates; α-olefins such as ethylene, propylene, butylene and the like.
炭素数２〜２０のアルキル基を有する連鎖移動剤としては、エタンチオール、１−プロパンチオール、２−プロパンチオール、１−ブタンチオール、２−ブタンチオール、１−ヘキサンチオール、２−ヘキサンチオール、２−メチルヘプタン−２−チオール、２−ブチルブタン−１−チオール、１，１−ジメチル−１−ペンタンチオール、１−オクタンチオール、２−オクタンチオール、１−デカンチオール、３−デカンチオール、１−ウンデカンチオール、１−ドデカンチオール、２−ドデカンチオール、１−トリデカンチオール、１−テトラデカンチオール、３−メチル−３−ウンデカンチオール、５−エチル−５−デカンチオール、ｔｅｒｔ−テトラデカンチオール、１−ヘキサデカンチオール、１−ヘプタデカンチオール及び１−オクタデカンチオール等の直鎖又は分岐アルキル基を有する化合物が挙げられ、これらの内の１種又は２種以上を用いることができる。上記の内でも、ウェーハへの吸着性が良好となる点で、炭素数４〜２０のアルキル基を有するものが好ましく、炭素数６〜２０のアルキル基を有するものがより好ましい。
本発明では、炭素数２〜２０のアルキル基を有する連鎖移動剤を用いることにより、水溶性高分子の末端に炭素数２〜２０のアルキル基が導入される。これによりウェーハ表面等への吸着性が向上する。アルキル基の炭素数が１の場合は得られる水溶性高分子のウェーハへの吸着性が十分でない場合がある。また、アルキル基の炭素数が２０を超えると、得られる高分子の水への溶解性が不足する場合がある。
Examples of the chain transfer agent having an alkyl group having 2 to 20 carbon atoms include ethanethiol, 1-propanethiol, 2-propanethiol, 1-butanethiol, 2-butanethiol, 1-hexanethiol, 2-hexanethiol, 2 -Methylheptane-2-thiol, 2-butylbutane-1-thiol, 1,1-dimethyl-1-pentanethiol, 1-octanethiol, 2-octanethiol, 1-decanethiol, 3-decanethiol, 1-undecane Thiol, 1-dodecanethiol, 2-dodecanethiol, 1-tridecanethiol, 1-tetradecanethiol, 3-methyl-3-undecanethiol, 5-ethyl-5-decanethiol, tert-tetradecanethiol, 1-hexadecanethiol 1-heptadecanethiol and 1-o Compounds having a linear or branched alkyl group such as Polygonum cantilever ol and the like, may be used alone or two or more of these. Among these, those having an alkyl group having 4 to 20 carbon atoms are preferable, and those having an alkyl group having 6 to 20 carbon atoms are more preferable in that the adsorptivity to the wafer is good.
In this invention, a C2-C20 alkyl group is introduce | transduced into the terminal of water-soluble polymer by using the chain transfer agent which has a C2-C20 alkyl group. Thereby, the adsorptivity to the wafer surface and the like is improved. When the carbon number of the alkyl group is 1, the resulting water-soluble polymer may not be sufficiently adsorbed on the wafer. Moreover, when carbon number of an alkyl group exceeds 20, the solubility to the water of the polymer obtained may be insufficient.
本発明では、上記した連鎖移動剤以外にも、本発明の効果を奏する範囲でその他の連鎖移動剤を用いてもよい。具体的な例としては、メルカプト酢酸、メルカプトプロピオン酸、２−メルカプトエタノール等が挙げられる。
連鎖移動剤を用いる際、その好ましい使用量は、全単量体の量に対して０．１〜１０質量％であり、さらに好ましくは０．５〜５質量％である。
In the present invention, in addition to the chain transfer agent described above, other chain transfer agents may be used as long as the effects of the present invention are exhibited. Specific examples include mercaptoacetic acid, mercaptopropionic acid, 2-mercaptoethanol and the like.
When using a chain transfer agent, the preferable usage-amount is 0.1-10 mass% with respect to the quantity of all the monomers, More preferably, it is 0.5-5 mass%.
水溶性高分子の数平均分子量は、１，０００〜５０，０００の範囲であることが好ましく、より好ましくは１，０００〜３０，０００の範囲であり、さらに好ましくは１，０００〜１０，０００の範囲である。数平均分子量が１，０００未満の場合、ウェーハの濡れ性が不十分となることがあり、５０，０００を超えると、末端に導入されるアルキル基の量が減少する為、ウェーハ表面への吸着性が低下する。 The number average molecular weight of the water-soluble polymer is preferably in the range of 1,000 to 50,000, more preferably in the range of 1,000 to 30,000, and still more preferably 1,000 to 10,000. Range. When the number average molecular weight is less than 1,000, the wettability of the wafer may be insufficient. When the number average molecular weight exceeds 50,000, the amount of alkyl groups introduced at the terminal decreases, so that it is adsorbed on the wafer surface. Sex is reduced.
＜水溶性高分子の製造方法＞
本発明における水溶性高分子は、重合溶媒中、前記炭素数２〜２０のアルキル基を有する連鎖移動剤及び重合開始剤等の存在下、ビニルエステル化合物を７０〜１００ｍｏｌ％含む単量体混合物を重合してポリビニルエステルを得た後、該ビニルエステルに対する鹸化度が９０〜１００ｍｏｌ％となるように鹸化することにより得ることができる。
<Method for producing water-soluble polymer>
The water-soluble polymer in the present invention is a monomer mixture containing 70 to 100 mol% of a vinyl ester compound in the presence of the chain transfer agent having a C2-20 alkyl group and a polymerization initiator in a polymerization solvent. After obtaining a polyvinyl ester by polymerization, it can be obtained by saponification such that the saponification degree with respect to the vinyl ester is 90 to 100 mol%.
重合方法は特に制限されるものではないが、溶液重合法が好ましい。溶液重合によれば、本発明の前駆体であるポリビニルエステルを均一な溶液として得ることができる。
溶液重合の際の重合溶媒には、メタノール、エタノール等のアルコール類、アセトン、メチルエチルケトン等のケトン類、及びＮ，Ｎ−ジメチルホルムアミド等のアミド類等が挙げられ、これらの内の１種、又は２種以上を併用して用いてもよい。上記の中でも、重合後のポリマー溶液をそのまま後述する鹸化反応に用いることができる点からメタノールが好ましい。
The polymerization method is not particularly limited, but the solution polymerization method is preferable. According to the solution polymerization, the polyvinyl ester which is the precursor of the present invention can be obtained as a uniform solution.
Examples of the polymerization solvent for the solution polymerization include alcohols such as methanol and ethanol, ketones such as acetone and methyl ethyl ketone, and amides such as N, N-dimethylformamide, and one of these, or Two or more kinds may be used in combination. Among these, methanol is preferable because the polymer solution after polymerization can be used as it is for the saponification reaction described later.
また、重合の際には公知の重合開始剤を使用出来るが、特にラジカル重合開始剤が好ましく用いられる。
ラジカル重合開始剤としては、例えば、過硫酸ナトリウム、過硫酸カリウム及び過硫酸アンモニウム等の過硫酸塩類、ｔ−ブチルハイドロパーオキサイド等のハイドロパーオキサイド類、過酸化水素等の水溶性過酸化物、メチルエチルケトンパーオキサイド、シクロヘキサノンパーオキサイド等のケトンパーオキサイド類、ジ−ｔ−ブチルパーオキサイド、ｔ−ブチルクミルパーオキサイド等のジアルキルパーオキサイド類、ｔ−ブチルパーオキシピバレート、ｔ−ヘキシルパーオキシピバレート等のパーオキシエステル類等の油溶性の過酸化物、２，２’−アゾビスイソブチロニトリル、２，２’−アゾビス（２，４−ジメチルバレロニトリル）、２，２’−アゾビス（２−メチルブチロニトリル）等のアゾ化合物等が挙げられる。
前記ラジカル重合開始剤は１種類のみ使用しても又は２種以上を併用してもよい。
前記ラジカル重合開始剤の中でも、重合反応の制御が行い易い点より過硫酸塩類やアゾ化合物が好ましく、特に好ましくはアゾ化合物である。
ラジカル重合開始剤の使用割合は特に制限されないが、水溶性高分子全体を構成する全単量体の合計重量に基づいて、０．１〜１０質量％の割合で使用することが好ましく、０．１〜５質量％の割合がより好ましく、０．２〜３質量％の割合がさらに好ましい。
In the polymerization, a known polymerization initiator can be used, and a radical polymerization initiator is particularly preferably used.
Examples of the radical polymerization initiator include persulfates such as sodium persulfate, potassium persulfate and ammonium persulfate, hydroperoxides such as t-butyl hydroperoxide, water-soluble peroxides such as hydrogen peroxide, and methyl ethyl ketone. Ketone peroxides such as peroxide and cyclohexanone peroxide, dialkyl peroxides such as di-t-butyl peroxide and t-butylcumyl peroxide, t-butyl peroxypivalate, t-hexyl peroxypivalate, etc. Oil-soluble peroxides such as peroxyesters, 2,2′-azobisisobutyronitrile, 2,2′-azobis (2,4-dimethylvaleronitrile), 2,2′-azobis (2 -Methylbutyronitrile) and the like.
The radical polymerization initiator may be used alone or in combination of two or more.
Among the radical polymerization initiators, persulfates and azo compounds are preferable from the viewpoint of easy control of the polymerization reaction, and azo compounds are particularly preferable.
The ratio of the radical polymerization initiator used is not particularly limited, but is preferably 0.1 to 10% by mass based on the total weight of all monomers constituting the entire water-soluble polymer. A ratio of 1 to 5% by mass is more preferable, and a ratio of 0.2 to 3% by mass is more preferable.
前記の通り、重合は、炭素数２〜２０のアルキル基を有する連鎖移動剤存在下で行われる。これにより、水溶性高分子の末端にアルキル基が導入されると共に、水溶性高分子の分子量を適度に調整することができる。 As described above, the polymerization is performed in the presence of a chain transfer agent having an alkyl group having 2 to 20 carbon atoms. Thereby, an alkyl group is introduced into the terminal of the water-soluble polymer, and the molecular weight of the water-soluble polymer can be adjusted appropriately.
重合時における反応温度としては、３０〜１００℃が好ましく、４０〜９０℃がより好ましく、５０〜８０℃がさらに好ましい。 As reaction temperature at the time of superposition | polymerization, 30-100 degreeC is preferable, 40-90 degreeC is more preferable, and 50-80 degreeC is further more preferable.
上記重合反応の後、得られた重合体を、有機溶媒中において、触媒の存在下で鹸化する。この鹸化工程で使用する有機溶媒(以下、鹸化溶媒という。)としては、メタノール、エタノール、プロパノール、エチレングリコール、プロピレングリコール、グリセリン及びジエチレングリコールなどのアルコール類を使用することができるが、特に、メタノールが好ましい。 After the polymerization reaction, the obtained polymer is saponified in the presence of a catalyst in an organic solvent. As the organic solvent used in the saponification step (hereinafter referred to as saponification solvent), alcohols such as methanol, ethanol, propanol, ethylene glycol, propylene glycol, glycerin and diethylene glycol can be used. preferable.
また、鹸化触媒としては、例えば、水酸化ナトリウム、水酸化カリウム、ナトリウムアルコラート及び炭酸ナトリウムなどのアルカリ触媒、硫酸、燐酸及び塩酸などの酸触媒が挙げられる。これら鹸化触媒の中でも、アルカリ触媒を使用することが好ましく、水酸化ナトリウム又は水酸化カリウムを使用することがより好ましい。これにより、鹸化速度を早くして、生産性を向上させることができる。 Examples of the saponification catalyst include alkali catalysts such as sodium hydroxide, potassium hydroxide, sodium alcoholate and sodium carbonate, and acid catalysts such as sulfuric acid, phosphoric acid and hydrochloric acid. Among these saponification catalysts, an alkali catalyst is preferably used, and sodium hydroxide or potassium hydroxide is more preferably used. Thereby, the saponification rate can be increased and the productivity can be improved.
この鹸化により、重合体におけるビニルエステル単位の一部又は全部が鹸化されて、ビニルアルコール単位となる。なお、鹸化度は、９０〜１００ｍｏｌ％の範囲であり、９２〜９９ｍｏｌ％の範囲が好ましく、９５〜９８ｍｏｌ％の範囲がより好ましい。鹸化度が９０ｍｏｌ％未満の場合、水への溶解性が十分でなく、本発明の半導体用濡れ剤の効果が得られない場合がある。 By this saponification, some or all of the vinyl ester units in the polymer are saponified to become vinyl alcohol units. The degree of saponification is in the range of 90 to 100 mol%, preferably in the range of 92 to 99 mol%, and more preferably in the range of 95 to 98 mol%. When the saponification degree is less than 90 mol%, the solubility in water is not sufficient, and the effect of the wetting agent for semiconductors of the present invention may not be obtained.
本発明では、鹸化により得られたビニルアルコール単位の一部を炭素数１〜７のアルデヒド化合物によりアセタール化し、以下の一般式（５）で表される構造単位に変性してもよい。ポリビニルアルコール単位の一部をアセタール化することにより、ウェーハに対する吸着性をより高めることができる。
上記アセタール化を行う場合、水溶性高分子は、分子中にビニルアルコール構造単位を７０〜９９ｍｏｌ％及びアセタール化された構造単位を１〜３０ｍｏｌ％有することが好ましい。ポリビニルアルコール単位が９９ｍｏｌ％以下、すなわちアセタール化された構造単位が１ｍｏｌ％以上である場合、ウェーハへの吸着性が向上する。また、ポリビニルアルコール単位が７０ｍｏｌ％以上、すなわちアセタール化された構造単位が３０ｍｏｌ％以下であれば、水への溶解性が十分確保される。 When performing the acetalization, the water-soluble polymer preferably has 70 to 99 mol% of vinyl alcohol structural units and 1 to 30 mol% of acetalized structural units in the molecule. When the polyvinyl alcohol unit is 99 mol% or less, that is, the acetalized structural unit is 1 mol% or more, the adsorptivity to the wafer is improved. If the polyvinyl alcohol unit is 70 mol% or more, that is, if the acetalized structural unit is 30 mol% or less, the solubility in water is sufficiently ensured.
アセタール化は従来公知の方法を利用することが可能であるが、一般には、ポリビニルアルコールとアルデヒド化合物とを塩酸等の酸触媒の存在下で脱水縮合させて行われる。例えば、ポリビニルアルコールを１〜３０質量％含む水溶液を調整し、−５〜６０℃程度の温度範囲で酸触媒及びアルデヒド化合物を接触させて２０分〜６時間反応を進行させる。その後、必要に応じて温度を１０〜５０℃上昇させて更に３０分〜５時間熟成反応させて反応を完了し、好ましくは冷却することによりアセタール化ポリビニルアルコールを得る方法が挙げられる。 Acetalization can be carried out by a conventionally known method, but is generally carried out by dehydrating and condensing polyvinyl alcohol and an aldehyde compound in the presence of an acid catalyst such as hydrochloric acid. For example, an aqueous solution containing 1 to 30% by mass of polyvinyl alcohol is prepared, and the reaction is allowed to proceed for 20 minutes to 6 hours by contacting an acid catalyst and an aldehyde compound in a temperature range of about −5 to 60 ° C. Thereafter, the temperature is raised by 10 to 50 ° C. as necessary, and the reaction is completed by further aging reaction for 30 minutes to 5 hours, and preferably a method of obtaining acetalized polyvinyl alcohol by cooling.
上記アルデヒド化合物としては、例えば、ホルムアルデヒド、並びにアセトアルデヒド、プロピオンアルデヒド、ｎ−ブチルアルデヒド、イソブチルアルデヒド、ｔ−ブチルアルデヒド及びヘキシルアルデヒド等の直鎖または分岐アルキルアルデヒド類；シクロヘキサンカルバルデヒド、ベンズアルデヒド等の脂環式又は芳香族アルデヒド類等が挙げられる。これらは、単独で用いてもよいし、２種以上を併用してもよい。また、ホルムアルデヒドを除き、１以上の水素原子がハロゲン等により置換されたものであってもよい。これらの内でも、水に対する溶解性が高くアセタール化反応が容易である点から、直鎖または分岐アルキルアルデヒド類であることが好ましく、その中でもｎ−プロピルアルデヒド、ｎ−ブチルアルデヒド、ｎ−ペンチルアルデヒドであることがより好ましい。
アルデヒド化合物としては、上記の他にも、２−エチルヘキシルアルデヒド、ノニルアルデヒド、デシルアルデヒド等の炭素数８以上のアルデヒド化合物を用いてもよい。
Examples of the aldehyde compound include formaldehyde and linear or branched alkyl aldehydes such as acetaldehyde, propionaldehyde, n-butyraldehyde, isobutyraldehyde, t-butyraldehyde, and hexyl aldehyde; and alicyclic rings such as cyclohexanecarbaldehyde and benzaldehyde. Formula or aromatic aldehydes may be mentioned. These may be used alone or in combination of two or more. Further, except for formaldehyde, one or more hydrogen atoms may be substituted with halogen or the like. Of these, linear or branched alkyl aldehydes are preferred from the viewpoint of high solubility in water and easy acetalization reaction. Among them, n-propyl aldehyde, n-butyraldehyde, n-pentyl aldehyde are preferable. It is more preferable that
As the aldehyde compound, in addition to the above, an aldehyde compound having 8 or more carbon atoms such as 2-ethylhexylaldehyde, nonylaldehyde, decylaldehyde and the like may be used.
鹸化により得られた水溶性高分子は、有機溶媒及び水等を公知の方法により乾燥除去し、固体の状態で扱うこともできる。乾燥後、必要に応じて粉砕及び分級等の工程を経てもよい。
また、乾燥前に、例えば酢酸メチル、メタノール及び水等を洗浄液として洗浄することにより、塩類や揮発成分等を低減することもできる。
The water-soluble polymer obtained by saponification can be handled in a solid state by drying and removing an organic solvent and water by a known method. After drying, steps such as pulverization and classification may be performed as necessary.
In addition, before drying, for example, methyl acetate, methanol, water and the like can be washed as a washing solution to reduce salts, volatile components, and the like.
＜半導体用濡れ剤＞
本発明の半導体用濡れ剤は、前記水溶性高分子及び水を含んでなる。水は、濡れ剤としての効果を損なわないよう、純度の高いものを用いることが好ましい。具体的には、イオン交換樹脂により不純物イオンを除去した後、濾過により異物を除去した純水若しくは超純水、又は、蒸留水を使用することが好ましい。濡れ剤には、この他に、水との混和性が高いアルコール及びケトン類等の有機溶剤等を含んでいてもよい。
半導体用濡れ剤中の水溶性高分子の割合は、水溶液として扱いやすい粘度であれば特に限定されないが、１〜５０質量％の範囲が好ましく、３〜４０質量％の範囲がより好ましく、５〜３０質量％の範囲がさらに好ましい。
<Wetting agent for semiconductors>
The semiconductor wetting agent of the present invention comprises the water-soluble polymer and water. It is preferable to use high-purity water so as not to impair the effect as a wetting agent. Specifically, it is preferable to use pure water, ultrapure water, or distilled water from which foreign ions are removed by filtration after removing impurity ions with an ion exchange resin. In addition to this, the wetting agent may contain an organic solvent such as alcohol and ketone having high miscibility with water.
Although the ratio of the water-soluble polymer in the wetting agent for semiconductor is not particularly limited as long as it is a viscosity that can be easily handled as an aqueous solution, the range is preferably 1 to 50% by mass, more preferably 3 to 40% by mass, The range of 30% by mass is more preferable.
本発明における水溶性高分子は、ウェーハ表面等への吸着性に優れ、特に完全に酸化膜が除去された状態のウェーハ表面に対して高い吸着性を示す。このため、ウェーハの表面処理工程に本発明の半導体用濡れ剤を用いた場合、研磨後のウェーハ表面の平滑性を高め、ＣＯＰ及びパーティクル付着による汚染等を低減することができる。これらの効果が得られる理由として、以下のメカニズムを想定している。
ウェーハ表面の平滑性に関しては、半導体用濡れ剤中の水溶性高分子がウェーハ表面に吸着することで、ＣＭＰのメカニカル研磨においてウェーハ表面と砥粒との間の摩擦が緩和される。このため、メカニカル研磨によりウェーハ表面に形成される微小な凹凸が低減され、平滑性が向上すると考えられる。
The water-soluble polymer in the present invention is excellent in adsorptivity to the wafer surface and the like, and particularly exhibits high adsorptivity to the wafer surface in a state where the oxide film is completely removed. For this reason, when the semiconductor wetting agent of the present invention is used in the wafer surface treatment process, the smoothness of the polished wafer surface can be improved, and contamination caused by COP and particle adhesion can be reduced. The following mechanism is assumed as a reason why these effects can be obtained.
Regarding the smoothness of the wafer surface, the water-soluble polymer in the semiconductor wetting agent is adsorbed on the wafer surface, so that the friction between the wafer surface and the abrasive grains is reduced in the mechanical polishing of CMP. For this reason, it is considered that the minute unevenness formed on the wafer surface by mechanical polishing is reduced and the smoothness is improved.
また、上述した通り、メカニカル研磨では、ウェーハ表面に研磨用組成物が供給されるとともに研磨パッドがウェーハ表面に押し付けられて回転することにより、ウェーハ表面を物理的に研磨する。よって、ウェーハ表面ではＣＯＰ以外の箇所に研磨パッドが押し付けられ、ウェーハ表面に対して垂直方向に研磨されることとなる。メカニカル研磨の進行に伴いＣＯＰは次第に小さくなり、その深さ以上にウェーハ表面が研磨されたときにＣＯＰは消滅することとなる。したがって、メカニカル研磨は、ＣＯＰの数を減少させ、又その大きさを低減する効果を示すと考えられる。
一方、ケミカル研磨では、研磨の際にＣＯＰ内に研磨用組成物が入り込み、塩基性化合物がＣＯＰ内部を腐食又はエッチングする。このように、ＣＯＰ内部では、その内部壁に対して垂直方向に研磨されるため、ケミカル研磨の進行に伴いウェーハ表面のＣＯＰは大きくなると考えられる。
本発明では、ウェーハ表面に吸着した水溶性高分子は、メカニカル研磨以上にケミカル研磨を抑制する働きを有するものと想定している。ウェーハに対する水溶性高分子の吸着性が高いほどこの傾向は強くなり、結果として平滑性が高くＣＯＰの少ないウェーハ表面を得ることができると推察される。
In addition, as described above, in mechanical polishing, the polishing composition is supplied to the wafer surface and the polishing pad is pressed against the wafer surface and rotated to physically polish the wafer surface. Therefore, the polishing pad is pressed against a portion other than the COP on the wafer surface and polished in a direction perpendicular to the wafer surface. As the mechanical polishing proceeds, the COP gradually decreases, and the COP disappears when the wafer surface is polished beyond the depth. Therefore, it is considered that the mechanical polishing shows the effect of reducing the number of COPs and the size thereof.
On the other hand, in chemical polishing, the polishing composition enters the COP during polishing, and the basic compound corrodes or etches the inside of the COP. As described above, since the polishing is performed in the direction perpendicular to the inner wall of the COP, it is considered that the COP on the wafer surface increases with the progress of chemical polishing.
In the present invention, it is assumed that the water-soluble polymer adsorbed on the wafer surface has a function of suppressing chemical polishing more than mechanical polishing. It is presumed that this tendency becomes stronger as the water-soluble polymer adsorbability to the wafer becomes higher, and as a result, a wafer surface having high smoothness and low COP can be obtained.
さらに、ウェーハ表面に水溶性高分子が吸着することにより、その表面が親水化される。これにより、研磨の際のパーティクルの付着による汚染も防止することができる。 Furthermore, when the water-soluble polymer is adsorbed on the wafer surface, the surface is hydrophilized. Thereby, contamination due to adhesion of particles during polishing can also be prevented.
＜研磨用組成物＞
本発明の研磨用組成物は、上記半導体用濡れ剤、水、砥粒及びアルカリ化合物を含んでなるものである。研磨用組成物中の半導体用濡れ剤の割合は、特に限定されるものではないが、研磨用組成物がＣＭＰにおける扱い上、又ウェーハ表面に吸着するにあたり適度な粘度とすることが好ましい。研磨用組成物の具体的な粘度は、０．１〜１０ｍＰａ・ｓの範囲であることが好ましく、０．３〜８ｍＰａ・ｓの範囲であることがより好ましく、０．５〜５ｍＰａ・ｓの範囲であることがさらに好ましい。
また、上記水溶性高分子は、研磨剤用組成物全体の０．００１〜１０質量％の範囲となるよう用いることが好ましく、０．００５〜５質量％の範囲であることがより好ましい。
<Polishing composition>
The polishing composition of the present invention comprises the semiconductor wetting agent, water, abrasive grains, and an alkali compound. The ratio of the semiconductor wetting agent in the polishing composition is not particularly limited, but it is preferable that the polishing composition has an appropriate viscosity for handling in CMP and adsorbing to the wafer surface. The specific viscosity of the polishing composition is preferably in the range of 0.1 to 10 mPa · s, more preferably in the range of 0.3 to 8 mPa · s, and 0.5 to 5 mPa · s. More preferably, it is in the range.
Moreover, it is preferable to use the said water-soluble polymer so that it may become the range of 0.001-10 mass% of the whole composition for abrasive | polishing agents, and it is more preferable that it is the range of 0.005-5 mass%.
砥粒としてはコロイダルシリカ等を用いることができる。砥粒としてコロイダルシリカを用いる場合、研磨用組成物におけるその含有量は、０．１〜５０質量％であることが好ましく、１〜３０質量％であることがより好ましく、３〜２０質量％であることがさらに好ましい。コロイダルシリカの使用量が０．１質量％以上であればメカニカル研磨の研磨速度が良好なものとなる。また、５０質量％以下であれば、砥粒の分散性が保持され、ウェーハ表面の平滑性が良好なものとすることができる。 Colloidal silica or the like can be used as the abrasive. When colloidal silica is used as the abrasive, the content in the polishing composition is preferably 0.1 to 50% by mass, more preferably 1 to 30% by mass, and 3 to 20% by mass. More preferably it is. If the usage-amount of colloidal silica is 0.1 mass% or more, the polishing rate of mechanical polishing will become favorable. Moreover, if it is 50 mass% or less, the dispersibility of an abrasive grain is hold | maintained and the smoothness of a wafer surface can be made favorable.
コリダルシリカの平均粒子径は、必要とする研磨速度と研磨後のウェーハ表面の平滑性から適宜選択されるが、一般的には、２〜５００ｎｍの範囲であり、５〜３００ｎｍの範囲が好ましく、５〜２００ｎｍの範囲がより好ましい。 The average particle size of the corridal silica is appropriately selected from the required polishing rate and the smoothness of the wafer surface after polishing, but is generally in the range of 2 to 500 nm, preferably in the range of 5 to 300 nm. A range of ˜200 nm is more preferable.
アルカリ化合物としては、水溶性のアルカリ化合物であれば特に制限はなく、アルカリ金属水酸化物、アミン類又はアンモニア若しくは４級水酸化アンモニウム塩等を使用することができる。アルカリ金属水酸化物としては、水酸化カリウム、水酸化ナトリウム、水酸化ルビジウム及び水酸化セシウム等が挙げられる。アミン類としては、トリエチルアミン、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン、ジイソプロパノールアミン、エチレンジアミン、ヘキサメチレンジアミン、ジエチレントリアミン、トリエチルペンタミン及びテトラエチルペンタミン等が挙げられる。４級水酸化アンモニウム塩としては、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム及び水酸化テトラブチルアンモニウム等が挙げられる。これらの内では、半導体基板に対する汚染が少ないという点からアンモニア又は４級水酸化アンモニウム塩が好ましい。
本発明の研磨用組成物は、前記アルカリ化合物を添加することにより、そのｐＨが８〜１３となるように調整されるのが好ましい。ｐＨの範囲は８．５〜１２に調整するのがより好ましい。
The alkali compound is not particularly limited as long as it is a water-soluble alkali compound, and alkali metal hydroxides, amines, ammonia, quaternary ammonium hydroxide salts, and the like can be used. Examples of the alkali metal hydroxide include potassium hydroxide, sodium hydroxide, rubidium hydroxide and cesium hydroxide. Examples of amines include triethylamine, monoethanolamine, diethanolamine, triethanolamine, diisopropanolamine, ethylenediamine, hexamethylenediamine, diethylenetriamine, triethylpentamine, and tetraethylpentamine. Examples of the quaternary ammonium hydroxide salt include tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetrabutylammonium hydroxide. Among these, ammonia or a quaternary ammonium hydroxide salt is preferable from the viewpoint of less contamination of the semiconductor substrate.
The polishing composition of the present invention is preferably adjusted to have a pH of 8 to 13 by adding the alkali compound. More preferably, the pH range is adjusted to 8.5-12.
研磨剤用組成物には、上記以外にも、必要に応じて有機溶剤、各種キレート剤及び界面活性剤等を添加することができる。 In addition to the above, an organic solvent, various chelating agents, surfactants, and the like can be added to the abrasive composition as necessary.
以下、実施例に基づいて本発明を具体的に説明する。尚、本発明は、これらの実施例により限定されるものではない。尚、以下において「部」及び「％」は、特に断らない限り質量部及び質量％を意味する。
製造例で得られた水溶性高分子の分析方法並びに、実施例及び比較例における半導体用濡れ剤又は研磨用組成物の評価方法について以下に記載する。
Hereinafter, the present invention will be specifically described based on examples. In addition, this invention is not limited by these Examples. In the following, “parts” and “%” mean mass parts and mass% unless otherwise specified.
It describes below about the analysis method of the water-soluble polymer obtained by the manufacture example, and the evaluation method of the wetting agent for semiconductors or polishing composition in an Example and a comparative example.
＜鹸化度＞
ＪＩＳ Ｋ６７２６に従って測定した。
<Degree of saponification>
It measured according to JIS K6726.
＜数平均分子量（Ｍｎ）＞
各製造例で得られた鹸化前の共重合体について、ＧＰＣ（ゲルパーミエーションクロマトグラフィー ＨＬＣ−８２２０、東ソー製）を用いて、ポリスチレン換算により測定した。
<Number average molecular weight (Mn)>
The copolymer before saponification obtained in each production example was measured by polystyrene conversion using GPC (gel permeation chromatography HLC-8220, manufactured by Tosoh Corporation).
＜耐エッチング性（Ｅ．Ｒ．）＞
ガラスカッターで３×６ｃｍに切出したウェーハの重量を測定後、３％フッ酸水溶液に２０秒浸漬してウェーハ表面の酸化膜を除去し、その後純水で１０秒洗浄した。この工程をウェーハの表面が完全撥水になるまで繰り返した。次いで、アンモニア：水の重量比が１：１９であるアンモニア水に、水溶性高分子の濃度が０．１８ｗｔ％となるように半導体用濡れ剤を加えて、エッチング薬液を調整した。ウェーハをエッチング薬液に完全に浸漬させ、２５℃、１２時間静置してエッチングした。エッチング前後のウェーハ重量変化から、次式に従いエッチングレート（Ｅ．Ｒ．）を算出した。
After measuring the weight of the wafer cut to 3 × 6 cm with a glass cutter, it was immersed in a 3% hydrofluoric acid aqueous solution for 20 seconds to remove the oxide film on the wafer surface, and then washed with pure water for 10 seconds. This process was repeated until the wafer surface was completely water repellent. Next, an etching chemical solution was prepared by adding a semiconductor wetting agent to ammonia water having an ammonia: water weight ratio of 1:19 so that the concentration of the water-soluble polymer was 0.18 wt%. The wafer was completely immersed in an etching chemical solution and left to stand at 25 ° C. for 12 hours for etching. From the wafer weight change before and after etching, the etching rate (E.R.) was calculated according to the following formula.
＜濡れ性＞
耐エッチング性と同様の方法にてウェーハ表面の酸化膜を除去後、０．１８ｗｔ％の水溶性高分子溶液中に５分間浸漬した。浸漬後、ピンセットを用いて、ウェーハの表面が液面に対して垂直になるように引き上げ、１０秒経過時点におけるウェーハ端部からの撥水距離を目視で確認し、以下の基準により判定した。
○：撥水距離 ５ｍｍ未満
△：撥水距離 ５〜１０ｍｍ
×：撥水距離 １０ｍｍ超
<Wettability>
The oxide film on the wafer surface was removed by the same method as etching resistance, and then immersed in a 0.18 wt% water-soluble polymer solution for 5 minutes. After immersion, the surface of the wafer was pulled up using a tweezers so as to be perpendicular to the liquid level, and the water-repellent distance from the end of the wafer at the time when 10 seconds had passed was visually confirmed, and judged according to the following criteria.
○: Water repellent distance less than 5 mm △: Water repellent distance 5 to 10 mm
×: Water repellent distance> 10mm
＜ウェーハ外観＞
耐エッチング性と同様の方法でエッチングを行った後の、ウェーハ表面を目視で確認し、以下の基準により判定した。
○：表面に荒れが認められない
△：表面がやや荒れている
×：表面が著しく荒れている
<Wafer appearance>
The wafer surface after etching was performed by the same method as the etching resistance was visually confirmed, and judged according to the following criteria.
○: No roughening on the surface △: The surface is slightly rough ×: The surface is extremely rough
＜耐アルカリ性＞
５０ｃｃのスクリュー瓶に水酸化ナトリウムを水に溶かして調整したｐＨ１０のアルカリ水溶液４０ｇに水溶性高分子５．０ｇを加え、蓋をして良く混合した。アルミブロックヒーター内で５０℃、１ヶ月静置後の加水分解率をＧＣ、（ガスクロマトグラフィー ＧＣ−２０１４、島津製作所製）で評価し、以下の基準より判定した。
○：水溶性高分子の加水分解率が５％未満
×：水溶性高分子の加水分解率が５％以上
<Alkali resistance>
5.0 g of a water-soluble polymer was added to 40 g of an aqueous alkali solution adjusted to pH 10 by dissolving sodium hydroxide in water in a 50 cc screw bottle, and the mixture was covered well and mixed. The hydrolysis rate after standing at 50 ° C. for 1 month in an aluminum block heater was evaluated by GC (Gas Chromatography GC-2014, manufactured by Shimadzu Corporation), and judged according to the following criteria.
○: Hydrolysis rate of water-soluble polymer is less than 5% ×: Hydrolysis rate of water-soluble polymer is 5% or more
＜シリカ分散性＞
９ｃｃスクリュー瓶にコロイダルシリカ（１次粒子径：３０〜５０ｎｍ）５．０ｇに樹脂固形分２０％の水溶性高分子水溶液を０．５ｇ加えて、良く混合した。一晩静置後のシリカの粒子径（Ａ）を動的光散乱法（ＥＬＳＺ−１０００、大塚電子製）により測定し、水溶性高分子を加えていないコロイダルシリカの粒子径（Ｂ）からの変化率を下式に従って算出し、以下の基準より判定した。
変化率（％）＝｛（Ａ−Ｂ）／Ｂ｝×１００
○：変化率が１０％未満
△：変化率が１０％以上〜３０％未満
×：変化率が３０％以上
<Silica dispersibility>
In a 9 cc screw bottle, 0.5 g of a water-soluble polymer aqueous solution having a resin solid content of 20% was added to 5.0 g of colloidal silica (primary particle size: 30 to 50 nm) and mixed well. The particle size (A) of the silica after standing overnight was measured by a dynamic light scattering method (ELSZ-1000, manufactured by Otsuka Electronics Co., Ltd.), and from the particle size (B) of colloidal silica not added with a water-soluble polymer. The rate of change was calculated according to the following formula and judged according to the following criteria.
Rate of change (%) = {(A−B) / B} × 100
○: Change rate is less than 10% Δ: Change rate is 10% to less than 30% ×: Change rate is 30% or more
製造例１
≪ポリ酢酸ビニルの合成≫
攪拌翼、還流冷却管、温度計、各種導入管を備えた５Ｌの４つ口フラスコを用意し、重合溶剤としてメタノール１５００部を仕込み、窒素導入管から１０ｍｌ／ｍｉｎの流量にて窒素を吹き込みつつ、４０ｍｉｎかけて６０℃に昇温した。
昇温を確認後、２，２−アゾビス−２，４−ジメチルバレロニトリル（和光純薬工業製、商品名「Ｖ−６５」）１．０部をメタノール５０部に溶解した開始剤溶液を一括で加え、重合を開始した。
重合の開始と共に、モノマーとして酢酸ビニル（日本酢ビ・ポバール社製、以下「ＶＡｃ」という）１，０００部、連鎖移動剤として１−ドデカンチオール（和光純薬工業社製、以下「ＤＭ」という）６．０部をメタノール２５０部に溶解した連鎖移動剤溶液、Ｖ−６５の４．０部をメタノール２００部に溶解した開始剤溶液をそれぞれ導入管から６時間かけて滴下した。６時間重合させた後、フラスコを室温まで冷却し、４−メトキシフェノールを１．５部加えて重合を停止し、重合体１Ａを得た。この重合体１Ａの数平均分子量（Ｍｎ）は１５，０００であり、重合収率は８６％であった。ＧＣ並びにＮＭＲによる分析から、使用下連鎖移動剤は全て重合体１Ａの末端に導入されていることが確認された。
重合体１Ａに含まれる残モノマーは、真空ポンプをフラスコに繋いで、減圧下、５０℃で加熱することでメタノールと共に除去した。
≪水溶性高分子の合成（重合体の鹸化）≫
フラスコから重合体１Ａを抜出さずに、引き続き鹸化反応を行った。窒素導入管から１０ｍｌ／ｍｉｎの流量にて窒素を吹き込みつつ、３０ｍｉｎかけて混合液を６０℃に昇温した。昇温を確認後、水酸化ナトリウム１９．８部をメタノール３５０部に溶かしたアルカリ溶液を一括で加えて鹸化反応を開始した。４時間後、温度を下げて反応を停止した。溶剤をロータリーエバポレーターにてカット後、６０℃で一晩真空乾燥して、黄褐色固体の水溶性高分子１Ｂを得た。水溶性高分子１Ｂの鹸化度は９８．０ｍｏｌ％であった。
Production Example 1
≪Synthesis of polyvinyl acetate≫
A 5 L four-necked flask equipped with a stirring blade, a reflux condenser, a thermometer, and various introduction tubes is prepared, 1500 parts of methanol is charged as a polymerization solvent, and nitrogen is blown from the nitrogen introduction tube at a flow rate of 10 ml / min. The temperature was raised to 60 ° C. over 40 min.
After confirming the temperature rise, an initiator solution in which 1.0 part of 2,2-azobis-2,4-dimethylvaleronitrile (manufactured by Wako Pure Chemical Industries, Ltd., trade name “V-65”) was dissolved in 50 parts of methanol was batched. And started the polymerization.
Along with the start of polymerization, 1,000 parts of vinyl acetate (manufactured by Nihon Acetate / Poval, hereinafter referred to as “VAc”) as a monomer and 1-dodecanethiol (manufactured by Wako Pure Chemical Industries, Ltd., hereinafter referred to as “DM”) as a chain transfer agent ) A chain transfer agent solution in which 6.0 parts were dissolved in 250 parts of methanol and an initiator solution in which 4.0 parts of V-65 were dissolved in 200 parts of methanol were added dropwise from the introduction tube over 6 hours. After polymerization for 6 hours, the flask was cooled to room temperature, 1.5 parts of 4-methoxyphenol was added to terminate the polymerization, and polymer 1A was obtained. The number average molecular weight (Mn) of this polymer 1A was 15,000, and the polymerization yield was 86%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the terminal of the polymer 1A.
The residual monomer contained in the polymer 1A was removed together with methanol by connecting a vacuum pump to the flask and heating at 50 ° C. under reduced pressure.
≪Synthesis of water-soluble polymer (polymer saponification) ≫
The saponification reaction was continued without removing the polymer 1A from the flask. While nitrogen was blown from the nitrogen introduction tube at a flow rate of 10 ml / min, the mixture was heated to 60 ° C. over 30 min. After confirming the temperature rise, an alkaline solution in which 19.8 parts of sodium hydroxide was dissolved in 350 parts of methanol was added all at once to start the saponification reaction. After 4 hours, the temperature was lowered to stop the reaction. The solvent was cut with a rotary evaporator and then vacuum-dried at 60 ° C. overnight to obtain a water-soluble polymer 1B as a tan solid. The saponification degree of the water-soluble polymer 1B was 98.0 mol%.
製造例２
製造例１において、使用した連鎖移動剤の量を２．０部に変更した以外は同様にして、重合体２Ａを得た。重合体２ＡのＭｎは４２，０００であり、重合収率は８０％であった。ＧＣ並びにＮＭＲによる分析から、使用した連鎖移動剤は全て重合体２Ａの末端に導入されていることが確認された。
重合体２Ａを製造例１と同様に鹸化して、水溶性高分子２Ｂを得た。水溶性高分子２Ｂの鹸化度は９８．０ｍｏｌ％であった
Production Example 2
Polymer 2A was obtained in the same manner as in Production Example 1 except that the amount of the chain transfer agent used was changed to 2.0 parts. The Mn of the polymer 2A was 42,000, and the polymerization yield was 80%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the ends of the polymer 2A.
The polymer 2A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 2B. The saponification degree of the water-soluble polymer 2B was 98.0 mol%.
製造例３
製造例１において、使用した連鎖移動剤の量を２５．０部に変更した以外は同様にして、重合体３Ａを得た。重合体３ＡのＭｎは５，０００であり、重合収率は８５％であった。ＧＣ並びにＮＭＲによる分析から、使用した連鎖移動剤は全て重合体３Ａの末端に導入されていることが確認された。
重合体３Ａを製造例１と同様に鹸化して、水溶性高分子３Ｂを得た。水溶性高分子３Ｂの鹸化度は９８．０ｍｏｌ％であった
Production Example 3
Polymer 3A was obtained in the same manner as in Production Example 1 except that the amount of the chain transfer agent used was changed to 25.0 parts. The Mn of the polymer 3A was 5,000, and the polymerization yield was 85%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the ends of the polymer 3A.
The polymer 3A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 3B. The saponification degree of the water-soluble polymer 3B was 98.0 mol%.
製造例４
製造例１において、使用した連鎖移動剤の量を５０．０部に変更した以外は同様にして、重合体４Ａを得た。重合体４ＡのＭｎは２，３００であり、重合収率は８１％であった。ＧＣ並びにＮＭＲによる分析から、使用した連鎖移動剤は全て重合体４Ａの末端に導入されていることが確認された。
重合体４Ａを製造例１と同様に鹸化して、水溶性高分子４Ｂを得た。水溶性高分子４Ｂの鹸化度は９８．３ｍｏｌ％であった。
Production Example 4
Polymer 4A was obtained in the same manner as in Production Example 1 except that the amount of the chain transfer agent used was changed to 50.0 parts. The Mn of the polymer 4A was 2,300, and the polymerization yield was 81%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the ends of the polymer 4A.
The polymer 4A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 4B. The saponification degree of the water-soluble polymer 4B was 98.3 mol%.
製造例５
製造例１において、使用した連鎖移動剤を１−オクタンチオール（花王社製、商品名「チオカルコール０８」）３０．０部に変更した以外は同様にして、重合体５Ａを得た。重合体５ＡのＭｎは３，０００であり、重合収率は７７％であった。ＧＣ並びにＮＭＲによる分析から、使用下連鎖移動剤は全て重合体５Ａの末端に導入されていることが確認された。
重合体５Ａを製造例１と同様に鹸化して、水溶性高分子５Ｂを得た。水溶性高分子５Ｂの鹸化度は９８．７ｍｏｌ％であった。
Production Example 5
Polymer 5A was obtained in the same manner as in Production Example 1 except that the chain transfer agent used was changed to 30.0 parts of 1-octanethiol (trade name “Thiocalcol 08” manufactured by Kao Corporation). The Mn of the polymer 5A was 3,000, and the polymerization yield was 77%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the ends of the polymer 5A.
The polymer 5A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 5B. The saponification degree of the water-soluble polymer 5B was 98.7 mol%.
製造例６
製造例１において、使用した連鎖移動剤を１−ブタンチオール（和光純薬工業社製）３０．０部に変更した以外は同様にして、重合体６Ａを得た。重合体６ＡのＭｎは１，９００であり、重合収率は７５％であった。ＧＣ並びにＮＭＲによる分析から、使用した連鎖移動剤は全て重合体６Ａの末端に導入されていることが確認された。
重合体６Ａを製造例１と同様に鹸化して、水溶性高分子６Ｂを得た。水溶性高分子６Ｂの鹸化度は９８．８ｍｏｌ％であった。
Production Example 6
Polymer 6A was obtained in the same manner as in Production Example 1 except that the chain transfer agent used was changed to 30.0 parts of 1-butanethiol (manufactured by Wako Pure Chemical Industries, Ltd.). The Mn of the polymer 6A was 1,900, and the polymerization yield was 75%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the ends of the polymer 6A.
The polymer 6A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 6B. The saponification degree of the water-soluble polymer 6B was 98.8 mol%.
製造例７
製造例１において、使用した連鎖移動剤を１−オクタデカンチオール（和光純薬工業社製）３０．０部に変更した以外は同様にして、重合体７Ａを得た。重合体７ＡのＭｎは６，０００であり、重合収率は８６％であった。ＧＣ並びにＮＭＲによる分析から、使用した連鎖移動剤は全て重合体７Ａの末端に導入されていることが確認された。
重合体７Ａを製造例１と同様に鹸化して、水溶性高分子７Ｂを得た。水溶性高分子７Ｂの鹸化度は９８．３ｍｏｌ％であった。
Production Example 7
Polymer 7A was obtained in the same manner as in Production Example 1 except that the chain transfer agent used was changed to 30.0 parts of 1-octadecanethiol (Wako Pure Chemical Industries, Ltd.). The Mn of the polymer 7A was 6,000, and the polymerization yield was 86%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the ends of the polymer 7A.
The polymer 7A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 7B. The saponification degree of the water-soluble polymer 7B was 98.3 mol%.
製造例８
攪拌翼、還流冷却管、温度計、各種導入管を備えた３Ｌの４つ口フラスコを用意し、初期モノマーとしてＶＡｃ３５０部及びｎ−プロピルビニルエーテル（日本カーバイド社製、以下「ＮＰＶＥ」という）１５０部、重合溶剤としてメタノール２５０部を仕込み、攪拌混合した。さらに窒素導入管から１０ｍｌ／ｍｉｎの流量にて窒素を吹き込みつつ、４０ｍｉｎかけて混合液を６０℃に昇温した。
昇温を確認後、Ｖ−６５の２．０部をメタノール５０部に溶解した開始剤溶液を一括で加え、重合を開始した。
重合の開始と共に、滴下モノマーとしてＶＡｃ５００部をモノマー導入管から６時間かけて滴下しながら重合した。一方で、ＤＭ４０．０部をメタノール１５０部に溶解した連鎖移動剤溶液、及びＶ−６５の８．０部をメタノール１２０部に溶解した開始剤溶液も、重合開始共にそれぞれの導入管から６時間かけて滴下した。６時間重合させた後、フラスコを室温まで冷却し、４−メトキシフェノールを０．３部加えて重合を停止し、重合体８Ａを得た。この重合体８ＡのＭｎは２，５００であり、重合収率は８３％であった。重合体８Ａに含まれる残モノマーは、真空ポンプをフラスコに繋いで、減圧下、５０℃で加熱することでメタノールと共に除去した。
重合体８Ａを製造例１と同様に鹸化して、水溶性高分子８Ｂを得た。水溶性高分子８Ｂの鹸化度は９８．０ｍｏｌ％であった。水溶性高分子８Ｂについて1Ｈ−ＮＭＲで組成を測定したところ、ポリビニルアルコール／ＮＰＶＥ＝８５／１５ｍｏｌ％の共重合体であり、鹸化度は９８．０ｍｏｌ％であった。
Production Example 8
A 3 L four-necked flask equipped with a stirring blade, a reflux condenser, a thermometer, and various introduction tubes was prepared, and 350 parts of VAc and 150 parts of n-propyl vinyl ether (manufactured by Nippon Carbide Corporation, hereinafter referred to as “NPVE”) as initial monomers. Then, 250 parts of methanol was charged as a polymerization solvent and mixed with stirring. Further, the mixture was heated to 60 ° C. over 40 min while nitrogen was blown from the nitrogen introduction tube at a flow rate of 10 ml / min.
After confirming the temperature rise, an initiator solution prepared by dissolving 2.0 parts of V-65 in 50 parts of methanol was added all at once to initiate polymerization.
At the start of the polymerization, 500 parts of VAc was added dropwise as a dropping monomer from the monomer introduction tube over 6 hours. On the other hand, a chain transfer agent solution in which 40.0 parts of DM was dissolved in 150 parts of methanol and an initiator solution in which 8.0 parts of V-65 were dissolved in 120 parts of methanol were also obtained from each introduction tube for 6 hours. It was dripped over. After 6 hours of polymerization, the flask was cooled to room temperature, 0.3 parts of 4-methoxyphenol was added to terminate the polymerization, and a polymer 8A was obtained. Mn of this polymer 8A was 2,500, and the polymerization yield was 83%. The residual monomer contained in the polymer 8A was removed together with methanol by connecting a vacuum pump to the flask and heating at 50 ° C. under reduced pressure.
The polymer 8A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 8B. The saponification degree of the water-soluble polymer 8B was 98.0 mol%. When the composition of the water-soluble polymer 8B was measured by 1 H-NMR, it was a copolymer of polyvinyl alcohol / NPVE = 85/15 mol%, and the degree of saponification was 98.0 mol%.
製造例９
攪拌翼、還流冷却管、温度計、各種導入管を備えた１Ｌの４つ口フラスコを用意し、製造例３で得られた重合体３Ｂを１００部、純水４００部を仕込み、攪拌翼を１５０ｒｐｍで撹拌させながら９０℃に昇温して完全に溶解させた。次いで、内温を６０℃まで冷却した後、攪拌を継続しながら９８％硫酸１１．０部を加えた。さらに、ｎ−ブチルアルデヒド（和光純薬工業社製）６．６部を純水１５０部で希釈した水溶液を３０分間で滴下した。６０℃で４時間反応させた後、２５％アンモニア水７．７部を加えて反応を終了させた。ＧＣによる分析から、ｎ−ブチルアルデヒドは全量反応していることが確認された。その後、８０℃で一晩真空乾燥することにより、黄褐色固体の水溶性高分子９Ｂを得た。
Production Example 9
A 1 L four-necked flask equipped with a stirring blade, a reflux condenser, a thermometer, and various introduction tubes was prepared, and 100 parts of the polymer 3B obtained in Production Example 3 and 400 parts of pure water were charged. While stirring at 150 rpm, the mixture was heated to 90 ° C. and completely dissolved. Next, after cooling the internal temperature to 60 ° C., 11.0 parts of 98% sulfuric acid was added while continuing stirring. Furthermore, an aqueous solution obtained by diluting 6.6 parts of n-butyraldehyde (manufactured by Wako Pure Chemical Industries, Ltd.) with 150 parts of pure water was added dropwise over 30 minutes. After reacting at 60 ° C. for 4 hours, 7.7 parts of 25% aqueous ammonia was added to terminate the reaction. GC analysis confirmed that n-butyraldehyde had reacted in its entirety. Then, the water-soluble polymer 9B of the tan solid was obtained by vacuum-drying at 80 degreeC overnight.
製造例１０
製造例１において、使用した連鎖移動剤の量を０．１部に変更した以外は同様にして、重合体１０Ａを得た。重合体１０ＡのＭｎは６０，０００であり、重合収率は８５％であった。ＧＣ並びにＮＭＲによる分析から、使用した連鎖移動剤は全て重合体１０Ａの末端に導入されていることが確認された。
重合体１０Ａを製造例１と同様に鹸化して、水溶性高分子１０Ｂを得た。水溶性高分子１０Ｂの鹸化度は９８．０ｍｏｌ％であった。
Production Example 10
A polymer 10A was obtained in the same manner as in Production Example 1 except that the amount of the chain transfer agent used was changed to 0.1 part. The Mn of polymer 10A was 60,000, and the polymerization yield was 85%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced into the terminal of the polymer 10A.
The polymer 10A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 10B. The saponification degree of the water-soluble polymer 10B was 98.0 mol%.
製造例１１
製造例１において、使用した連鎖移動剤の量を１２０部に変更した以外は同様にして、重合体１１Ａを得た。重合体１１ＡのＭｎは８００であり、重合収率は８０％であった。ＧＣ並びにＮＭＲによる分析から、使用した連鎖移動剤は全て重合体１１Ａの末端に導入されていることが確認された。
重合体１１Ａを製造例１と同様に鹸化して、水溶性高分子１１Ｂを得た。水溶性高分子１１Ｂの鹸化度は９８．２ｍｏｌ％であった。
Production Example 11
In Production Example 1, a polymer 11A was obtained in the same manner except that the amount of the chain transfer agent used was changed to 120 parts. The Mn of the polymer 11A was 800, and the polymerization yield was 80%. From the analysis by GC and NMR, it was confirmed that all the chain transfer agents used were introduced at the ends of the polymer 11A.
The polymer 11A was saponified in the same manner as in Production Example 1 to obtain a water-soluble polymer 11B. The saponification degree of the water-soluble polymer 11B was 98.2 mol%.
製造例１２
製造例７において、初期モノマーをＶＡｃ１８０部及びＮＰＶＥ４００部とし、滴下モノマーをＶＡｃ４２０部に変更した以外は同様にして、重合体１２Ａを得た。仕込み量に基づく計算では、全単量体に占めるＶＡｃの割合は、６０ｍｏｌ％となる。重合体１２ＡのＭｎは２，２００であり、重合収率は７２％であった。
重合体１２Ａを製造例１と同様に鹸化して、高分子１２Ｂを得た。高分子１２Ｂの組成はポリビニルアルコール／ＮＰＶＥ＝６５／３５ｍｏｌ％の共重合体であり、鹸化度は９６．５ｍｏｌ％であった。
Production Example 12
Polymer 12A was obtained in the same manner as in Production Example 7 except that the initial monomer was changed to 180 parts of VAc and 400 parts of NPVE, and the dropped monomer was changed to 420 parts of VAc. In the calculation based on the charged amount, the proportion of VAc in all monomers is 60 mol%. The Mn of the polymer 12A was 2,200, and the polymerization yield was 72%.
The polymer 12A was saponified in the same manner as in Production Example 1 to obtain a polymer 12B. The composition of the polymer 12B was a copolymer of polyvinyl alcohol / NPVE = 65/35 mol%, and the degree of saponification was 96.5 mol%.
実施例１
水溶性高分子１Ｂの濃度が１５質量％となるように水を加え、半導体用濡れ剤を調整した。得られた半導体用濡れ剤について、耐エッチング性、濡れ性、ウェーハ外観及び耐アルカリ性の評価を行った。得られた結果について表１に示した。
また、アンモニア水を加えてｐＨを１０．０に調整したコロイダルシリカ分散液（１次粒子系３０〜５０ｎｍ、シリカ固形分１０％）１０．０ｇ、上記半導体用濡れ剤を０．１ｇ添加して、研磨剤用組成物を得た。得られた研磨剤用組成物についてシリカ分散性を評価し、表１に結果を示した。
Example 1
Water was added so that the concentration of the water-soluble polymer 1B was 15% by mass to prepare a semiconductor wetting agent. About the obtained wetting agent for semiconductors, etching resistance, wettability, wafer appearance and alkali resistance were evaluated. The results obtained are shown in Table 1.
Also, 10.0 g of colloidal silica dispersion (primary particle system 30-50 nm, silica solid content 10%) adjusted to pH 10.0 by adding aqueous ammonia and 0.1 g of the above-mentioned wetting agent for semiconductor were added. A composition for an abrasive was obtained. The obtained abrasive composition was evaluated for silica dispersibility, and Table 1 shows the results.
実施例２〜９及び比較例１〜６
表１に示された水溶性高分子を用いた以外は実施例１と同様に半導体用濡れ剤及び研磨剤組成物を調製した。ただし、比較例３では、鹸化後の高分子が水に溶解しないため、濡れ剤及び研磨剤組成物としての評価ができなかった。各試料の評価結果について表１に示した。
Examples 2-9 and Comparative Examples 1-6
A semiconductor wetting agent and abrasive composition were prepared in the same manner as in Example 1 except that the water-soluble polymer shown in Table 1 was used. However, in Comparative Example 3, since the polymer after saponification did not dissolve in water, evaluation as a wetting agent and abrasive composition could not be performed. The evaluation results of each sample are shown in Table 1.
表１に示された水溶性高分子の詳細は以下の通り。
ＰＶＡ５０５：低鹸化ポリビニルアルコール（クラレ社製、商品名「クラレポバール
ＰＶＡ５０５」、鹸化度７３．５ｍｏｌ％、重合度５００）
ＨＥＣ：ヒドロキシエチルセルロース（和光純薬工業社製、重量平均分子量９０，０００）
ＰＶＰ Ｋ３０：ポリビニルピロリドン（東京化成工業社製）
Details of the water-soluble polymer shown in Table 1 are as follows.
PVA505: low saponified polyvinyl alcohol (manufactured by Kuraray Co., Ltd., trade name “Kuraray Poval”
PVA505 ”, saponification degree 73.5 mol%, polymerization degree 500)
HEC: hydroxyethyl cellulose (manufactured by Wako Pure Chemical Industries, Ltd., weight average molecular weight 90,000)
PVP K30: Polyvinylpyrrolidone (manufactured by Tokyo Chemical Industry Co., Ltd.)
実施例１〜９は、本発明で規定する水溶性高分子を用いた実験例であり、ウェーハへの吸着性が高いため、耐エッチング性、濡れ性及びウェーハへの外観に優れる結果が得られている。また、研磨剤組成物とした場合のシリカ分散性にも優れることが確認された。中でも、水溶性高分子中にアルキルビニルエーテルに由来する構造単位を有する実施例８、及び鹸化により得られたビニルアルコール単位の一部をアセタール化した実施例９は、他の実施例よりも耐エッチング性に優れる結果であった。これらは、ウェーハ表面への吸着性により優れるためと推定される。
一方、水溶性高分子の分子量が本願で規定する上限値よりも高い比較例１は、耐エッチング性に劣るものであった。逆に水溶性高分子の分子量が本願の下限値に満たない比較例２は、ウェーハへの濡れ性が不十分な結果であった。また、鹸化度の低いポリビニルアルコールを用いた比較例４は、酢酸ビニル由来のユニットの加水分解が生じるため、耐アルカリ性が不足するものであった。比較例５及び６は、従来の研磨用組成物に用いられる水溶性高分子であるセルロース誘導体等を用いた例であるが、ウェーハ表面への吸着性及びシリカ分散性の点で、満足するものではなかった。
Examples 1 to 9 are experimental examples using the water-soluble polymer defined in the present invention, and because the adsorptivity to the wafer is high, results of excellent etching resistance, wettability and appearance to the wafer are obtained. ing. Moreover, it was confirmed that the silica dispersibility is excellent in the case of an abrasive composition. Among them, Example 8 having a structural unit derived from an alkyl vinyl ether in a water-soluble polymer and Example 9 in which a part of a vinyl alcohol unit obtained by saponification is acetalized are more resistant to etching than the other examples. The result was excellent in properties. These are presumed to be superior due to the adsorptivity to the wafer surface.
On the other hand, Comparative Example 1 in which the molecular weight of the water-soluble polymer is higher than the upper limit specified in the present application is inferior in etching resistance. Conversely, Comparative Example 2 in which the molecular weight of the water-soluble polymer is less than the lower limit of the present application was a result of insufficient wettability to the wafer. Further, in Comparative Example 4 using polyvinyl alcohol having a low saponification degree, hydrolysis of units derived from vinyl acetate occurred, so that the alkali resistance was insufficient. Comparative Examples 5 and 6 are examples using cellulose derivatives or the like which are water-soluble polymers used in conventional polishing compositions, but are satisfactory in terms of adsorptivity to the wafer surface and silica dispersibility. It wasn't.
本発明の半導体用濡れ剤は、研磨後のウェーハ表面への吸着性に優れるため、該半導体用濡れ剤を含む研磨用組成物を用いることにより、研磨後のウェーハ表面の平滑性を高め、かつ、ＣＯＰを抑制することが可能となる。さらに、シリカの分散性も良好であることから、シリコンウェーハの仕上げ研磨用組成物として特に有用である。 Since the wetting agent for semiconductors of the present invention is excellent in the adsorptivity to the wafer surface after polishing, by using a polishing composition containing the wetting agent for semiconductors, the smoothness of the wafer surface after polishing is improved, and , COP can be suppressed. Furthermore, since the dispersibility of silica is also good, it is particularly useful as a composition for final polishing of silicon wafers.
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