JP2013225658A - Semiconductor laser module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser module which is lightweight, achieves low costs, and where multiple terminals are led out from the interior.SOLUTION: A solder fixing part 11 is formed on an inner surface of a hole 27 and at a peripheral part of the hole 27. As previously described, a resin exposed part 15 is formed on both surfaces of a case part 3 at an outer periphery of the solder fixing part 11. Thus, the solder fixing part 11 is insulated from metal plating 4 by the resin exposed part 15. A terminal 9 is inserted into the hole 27. The terminal 9 is fixed to the solder fixing part 11 by solder 13. After the terminal 9 is fixed, a coating film 29 is provided so as to cover the resin exposed part 15 and the solder 13. The coating film 29 may protrude from the resin exposed part 15 as long as the coating film 29 covers at least the resin exposed part 15.

Description

  The present invention relates to a semiconductor laser module used in the field of optical communication.

  Conventionally, a semiconductor laser module is used in optical communication. The semiconductor laser module is modularized by optically coupling in advance an LD element that oscillates laser light, an optical fiber that transmits the oscillated laser light, and the like.

  Such a semiconductor laser module may be used by being accommodated in an optical element container. Such an optical element container is usually composed of a composite of ceramics and metal. On the other hand, for the purpose of cost reduction, there is a semiconductor laser module in which an optical element container is made of resin (for example, Patent Document 1).

  Moreover, there is an electronic element package that covers a resin cover member and an adhesive portion with a substrate by metal plating (Patent Document 2).

  Moreover, as a means for preventing water vapor permeation of the plastic film, there is an inorganic composition containing smectite which is an inorganic layered compound using a metal oxide glass as a matrix (for example, Patent Document 3).

  Further, there is a clay film composite in which a water vapor barrier layer having a water vapor permeability of 1.0 g / m 2 · day or less is provided on at least one surface of a clay film composed of only clay represented by smectite or clay and an additive ( For example, Patent Document 4).

JP 2002-5082 A JP 2005-167129 A JP 2003-41153 A JP 2011-131450 A

  However, since the resin-made optical element container like patent document 1 is a material, it is inferior to the sealing property. Therefore, for example, when a Peltier element or the like is arranged inside, moisture or the like may enter the inside of the optical element container from the outside, which may cause condensation.

  On the other hand, like patent document 2, higher sealing property can be obtained by performing metal plating on the surface. That is, the metal plating layer functions as a shielding layer that prevents moisture and the like from entering from the outside.

  However, in such a semiconductor laser module, a plurality of terminals that are electrically connected to the respective photoelectric elements inside may be led out to the outside of the optical element container. Such terminals are independent of each other. For this reason, when the terminal is led out from the optical element container on which the metal plating is formed, there is a problem that the metal plating and the terminal are electrically connected.

  In Patent Document 3, since the adhesion of the metal oxide glass differs between the molding resin and the metal, it is necessary to pre-treat the molding resin portion with a primer or the like in advance, and the molding resin portion and the metal portion are connected to the semiconductor laser. There is a problem that the water vapor barrier property for the module is insufficient.

  Further, even if a liquid silica coating material derived from polysilazane is applied on a clay film as in Patent Document 4, the solvent of the silica coating material diffuses into the clay film, and a silica film cannot be formed on the clay film. There's a problem. Moreover, it has a very thick composite structure in which the thickness of the clay film is 5 to 50 μm and the thickness of the water vapor barrier layer is 2 to 25 μm.

  The present invention has been made in view of such a problem, and an object of the present invention is to provide a semiconductor laser module that is lightweight and low-cost and in which a plurality of terminals are led out from the inside.

  In order to achieve the above-described object, the present invention provides a semiconductor laser module that accommodates photoelectric components therein, and includes a case portion, a lid portion that is disposed above the case portion, and an interior portion of the case portion. A photoelectric component, and a terminal that is electrically connected to the photoelectric component and is led out of the case part, the case part is formed of resin, and the lead part of the terminal of the case part includes: A hole is formed, and a solder fixing portion soldered to the terminal and a resin exposed portion formed around the solder fixing portion are formed around the hole, and on the surface of the case portion, Metal coating is performed except at least the resin exposed portion, and a coating film is formed in which the resin exposed portion is covered with an inorganic polymer material in a state where the terminal is bonded to the solder fixing portion. Semiconductor laser module Is Le.

  The thickness of the coating film is desirably 1 μm or more.

  The inorganic polymer material is preferably composed mainly of polysilazane. Here, polysilazane as a main component includes not only polysilazane but also additives that may be added as appropriate, and includes those that are inevitably mixed.

  The coating film includes a plurality of layers, and an inorganic layered compound may be added to at least one layer. In particular, the coating film includes three layers, and the intermediate layer includes an inorganic layered compound. It is desirable. In this case, the inorganic layered compound is preferably composed mainly of montmorillonite. Here, the main component of montmorillonite includes not only montmorillonite but also additives that may be added as appropriate, and includes those that are inevitably mixed.

  The inorganic layered compound is preferably blended in an amount of 10 to 40 parts by mass with respect to 100 parts by mass of the inorganic polymer material.

  The photoelectric component may include a Peltier element. The bottom part arranged at the lower part of the case part is made of metal, the thermal conductivity of the contact part with the Peltier element is 150 W / (m · K), and it can function as a heat sink for the photoelectric component. Good. The bottom may be made of either a copper tungsten alloy or a copper molybdenum alloy.

  The bottom part of the case part may be integrally formed of resin, and metal plating may be applied to the surface of the bottom part.

  The lid portion may be made of metal and made of the same material as the bottom portion.

  The surface on which the solder fixing portion and the resin exposed portion are formed may be formed obliquely with respect to the side surface of the case portion.

  According to the present invention, since the case portion is made of resin, it is possible to achieve weight reduction and cost reduction as compared with the case of using a ceramic or metal composite as in the conventional case. Moreover, since metal plating is given to the surface, it is excellent also in airtightness. Therefore, even if a Peltier element is arranged, condensation or the like does not occur inside.

  Further, a hole is formed in the lead-out portion of the terminal, and a solder fixing portion for providing solder and a resin exposed portion formed so as to surround the solder fixing portion are formed around the hole. Therefore, the metal plating and solder (solder fixing part) do not conduct. Further, since the resin exposed portion is covered with the crosslinked inorganic material, moisture does not enter from the portion, and the terminal and the metal plating do not conduct.

  Further, when the Peltier element is disposed, the bottom portion can be made to function as a heat sink by configuring the bottom portion with a metal having high thermal conductivity. At this time, by using a copper tungsten alloy, a copper molybdenum alloy or the like as the material of the bottom portion, it has high thermal conductivity and a small coefficient of linear expansion, so that it can prevent deformation due to heat and obtain high heat dissipation characteristics. it can. At this time, if the lid is made of the same material, the influence of deformation can be reduced with respect to the temperature change of the entire container.

  Moreover, you may comprise a bottom part integrally with a case part. By doing in this way, manufacture becomes easy. In this case, the bottom surface can also be subjected to metal plating to prevent moisture and the like from entering the inside.

  Moreover, manufacturability can be improved by forming the surface on which the resin exposed portion is formed obliquely. For example, the metal layer can be easily patterned by etching as in the circuit board manufacturing method. Alternatively, after the metal plating is performed on the entire surface, it becomes easy to remove the metal layer with a laser. In other words, the resin exposed portion can be molded without changing the angle of the container or the angle of the laser or the like.

  According to the present invention, it is possible to provide a semiconductor laser module that is lightweight and low in cost and in which a plurality of terminals are led out from the inside.

1 is a perspective view showing a semiconductor laser module 1. FIG. 1 is a front sectional view showing a semiconductor laser module 1. FIG. 1 is a side sectional view showing a semiconductor laser module 1. FIG. (A)-(c) is a figure which shows the sealing process of the terminal 9 vicinity, and is an enlarged view of the A section of FIG. The front sectional view showing semiconductor laser module 1a. The front sectional view showing semiconductor laser module 1b. Side surface sectional drawing which shows the semiconductor laser module 1c. The perspective view of the case part 3 of the semiconductor laser module 1c. Side surface sectional drawing which shows the semiconductor laser module 1d. The perspective view which shows the case part 3 of the semiconductor laser module 1d. The perspective view which shows the semiconductor laser module 40. FIG. FIG. 4 is a front sectional view showing the semiconductor laser module 40. (A)-(c) is a figure which shows the sealing process of the terminal 9 vicinity of other embodiment, and is a figure corresponding to FIG. (A) is the B section enlarged view of FIG. 13, (b) is a figure which shows the modification of (a). The figure which shows the modification of FIG.

  Hereinafter, a semiconductor laser module 1 according to an embodiment of the present invention will be described. 1 is a perspective view of the semiconductor laser module 1, FIG. 2 is a front sectional view, and FIG. 3 is a side sectional view. In FIG. 1, the illustration of the lid 23 and the conductive wire 25 (FIG. 3) connecting the components is omitted. Moreover, in FIGS. 1-3, illustration of the coating film mentioned later is abbreviate | omitted. The semiconductor laser module 1 mainly includes a case portion 3, a bottom portion 5, a lid portion 23, a photoelectric component 7, and the like. In addition, the shape of each part, arrangement | positioning, and other structures are not restricted to the illustrated example.

  The case portion 3 has a substantially box shape, and the bottom surface is the bottom portion 5. That is, the bottom part 5 constitutes a part of the case part 3 and is integrally formed. A metal plating 4 is formed on the surface of the case portion 3 (including the bottom portion 5). That is, the surface of the case part 3 and the bottom part 5 is covered with the metal plating 4 over substantially the entire surface except for some parts described later. The metal plating 4 is an electroplating layer made of Ni, Cu, Au or the like, for example, based on Ni, Cu electroless plating.

  The resin material constituting the case part 3 includes polysulfone (PSF), polyethersulfone (PES), polyphenylene sulfide (PPS), polyetheretherketone (PEEK), polyetherimide (PEI), and liquid crystal polymer. Thermoplastic resins (so-called super engineering plastics) such as (LCP) and syndiotactic polystyrene (SPS) can be used. Further, a glass filler or glass beads may be mixed in a resin such as a thermoplastic resin. In this case, the linear expansion coefficient of the case portion 3 can be adjusted by appropriately selecting the mixing ratio. Further, an additive for promoting plating formability may be mixed.

  A photoelectric component 7 is disposed inside the case portion 3 and on the upper surface of the bottom portion 5. The photoelectric component 7 includes, for example, a Peltier element, a fiber pedestal, an LD submount, a PD carrier, an LD element, a PD element, and the like.

  For example, a Peltier element is fixed on the bottom 5 with solder. A base is fixed to the upper part of the Peltier element by an adhesive such as solder or heat conductive silver paste. A fiber pedestal, LD submount, PD carrier, and the like are fixed on the base by the adhesive material described above. An optical fiber 21 is fixed to the fiber base. Further, the LD element is fixed to the LD submount, and the PD element is fixed to the PD carrier. The base is provided with a thermistor for detecting the temperature of the LD element.

  As shown in FIG. 3, a plurality of terminals 9 are connected to the photoelectric component 7 (base) via a conducting wire 25. The conducting wire 25 has a diameter of 10 μm to several hundred μm and is a wire made of, for example, gold, aluminum, or copper. The surface of the terminal 9 and the base is preferably subjected to a gold plating process in advance in order to improve the bonding with the conductive wire 25. In this case, the gold plating thickness is desirably 0.5 μm or more. Note that although each component constituting the photoelectric component 7 is also connected to the base or the like by a conducting wire, the illustration is omitted.

  As shown in FIG. 3, the terminal 9 passes through a hole 27 formed in the side surface of the case portion 3 and is led out from the inside of the case portion 3 to the outside. In the vicinity of the hole 27, a solder fixing portion 11 for fixing the solder is formed. The solder fixing part 11 is a metal part and is configured by plating or the like. In addition, the solder fixing | fixed part 11 is comprised similarly to the metal plating 4, for example. The metal plating 4 is not formed around the solder fixing portion 11, but a resin exposed portion 15 is formed in which the internal resin is exposed. That is, the resin exposed portion 15 is formed in an annular shape around the hole 27 and the solder fixing portion 11. A method for fixing the terminal 9 will be described later.

  As described above, the surface of the case portion 3 is covered with the metal plating 4 except for the resin exposed portion 15. As a means for selectively forming the metal plating 4 on the surface of the case portion 3, for example, two types of molding resins, a resin capable of forming the metal plating 4 and a resin not forming the metal plating 4, are integrated with a mold. And the case portion 3 may be formed. When the metal plating 4 is formed by performing metal plating on the case portion 3 formed in this manner, a portion where the metal plating 4 is not formed (that is, the resin exposed portion 15) can be formed.

  Moreover, after forming the case part 3 with resin which can form the metal plating 4 by injection molding etc., and forming the metal plating 4 in the whole surface of the case part 3, you may remove the metal plating 4 partially. For example, the metal part may be patterned by etching as in the method of manufacturing a printed circuit board, or the metal part may be removed by a laser.

  As shown in FIG. 2, a fiber pipe 17 is fixed to the other side surface of the case portion 3. The fiber pipe 17 is a metallic cylindrical member, for example, and is fixed to a hole formed in the side surface of the case portion 3 with solder or an adhesive. An optical fiber 21 is inserted into the fiber pipe 17 and fixed to the photoelectric component 7 (fiber pedestal) described above. The optical fiber 21 is led out of the case unit 3 through the fiber pipe 17. The optical fiber 21 is fixed inside the fiber pipe 17 with an adhesive or the like, and the opening of the fiber pipe 17 is closed.

  A lid fitting portion 19 is formed on the upper edge portion of the case portion 3. The lid fitting part 19 is a step part formed in the upper edge part of the case part 3, for example. Note that the metal plating 4 is also formed in the lid fitting portion 19. The lid portion 23 is disposed so as to fit into the lid fitting portion 19. The lid portion 23 is made of, for example, metal, and is fixed to the lid fitting portion 19 with solder or an adhesive. In addition, when solder is used for fixing the lid portion 23, Au and Sn plating for facilitating solder bonding may be applied to the solder placement portion in advance.

  FIG. 4 is an enlarged view of a part corresponding to part A in FIG. 3, and shows a process of fixing the terminal 9 and sealing the part. As described above, the hole 27 is provided in the side surface of the case portion 3. Further, the metal plating 4 is formed on the inner and outer surfaces of the case portion 3 except for the resin exposed portion 15.

  A solder fixing portion 11 is formed on the inner surface of the hole 27 and the peripheral edge of the hole 27. The solder fixing portion 11 may have the same configuration as that of the metal plating 4, but Au and Sn plating may be further performed on the plating in order to facilitate solder bonding. Further, as described above, the resin exposed portions 15 are formed on both sides of the case portion 3 on the outer periphery of the solder fixing portion 11. Therefore, the solder fixing part 11 and the metal plating 4 are insulated by the resin exposed part 15.

  First, as illustrated in FIG. 4A, the terminal 9 is inserted into the hole 27. Next, as shown in FIG. 4B, the terminal 9 is fixed to the solder fixing portion 11 with the solder 13. After the terminal 9 is fixed, a coating film 29 is provided so as to cover the resin exposed portion 15 and the solder 13 as shown in FIG. The coating film 29 may protrude from the resin exposed portion 15 as long as it can cover at least the resin exposed portion 15. Further, the coating film 29 is formed on the inner and outer surfaces of the case portion 3.

  The coating film 29 is an inorganic polymer material that has insulating properties and does not allow moisture or the like to penetrate. As such an inorganic polymer material, an alkali silicate, a silicate ester, polysilazane, or a silicic acid-based inorganic polymer material obtained by crosslinking a bifunctional silane compound is desirable, and polysilazane is particularly desirable. By forming the coating film 29 with a liquid containing at least one such compound, a Si—O—Si bond film can be formed. Therefore, the coating film 29 can prevent moisture from entering the inside of the case portion 3 after the case portion 3 is sealed and maintain airtightness. Moreover, by forming inside the case part 3, the impurity in resin which comprises the case part 3 is prevented from inhibiting operation | movement of the photoelectric component 7 (for example, LD element).

  An adhesive made of an organic material mainly composed of epoxy resin or the like is used for bonding the fiber pipe 17 (FIG. 2) and the case portion 3 described above or bonding the optical fiber 21 into the fiber pipe 17. When used, it is desirable to arrange a similar coating film 29 so as to cover the part. Furthermore, when a similar adhesive or the like is used for joining the lid portion 23 and the case portion 3, it is desirable to dispose the coating film 29 also on the joint portion.

The semiconductor laser module 1 sealed in this way is filled with an inert gas or the like having a dry interior. At this time, in the helium leak test defined in JIS Z2331, the helium leak amount is set to 1 × 10 ⁻⁹ [Pa · m ³ / sec] or less. By doing in this way, the penetration | invasion of the water | moisture content to the inside of the semiconductor laser module 1 can be sealed completely. Therefore, for example, even when the Peltier element is operated, it is possible to prevent the occurrence of condensation or the like due to the cooling inside the semiconductor laser module 1.

  According to the present embodiment, since the case portion 3 constituting the semiconductor laser module 1 is made of resin, the cost can be reduced and the weight can be reduced as compared with the case of using conventional ceramics, metal, or the like. A metal plating 4 is formed on the surface of the case portion 3. Therefore, it is possible to prevent moisture and the like from entering the semiconductor laser module 1 through the resin constituting the case portion 3.

  At this time, a plurality of terminals 9 penetrating the inside and the outside of the case portion 3 are provided. The terminals 9 are insulated from the metal plating 4 by the resin exposed portion 15. Accordingly, the terminals 9 can be arranged electrically independently.

  At least the resin exposed portion 15 is covered with the coating film 29. Therefore, it is possible to ensure the insulation between the metal plating 4 and the terminal 9 and to prevent moisture and the like from entering the semiconductor laser module 1 from the resin exposed portion 15 and the like.

  Next, a second embodiment will be described. In the following description, components having the same functions as those of the semiconductor laser module 1 are denoted by the same reference numerals as those in FIGS. 1 to 4 and redundant description is omitted. FIG. 5 is a front sectional view showing the semiconductor laser module 1a, and corresponds to FIG.

  The semiconductor laser module 1 a has substantially the same configuration as the semiconductor laser module 1, but differs in that the bottom 5 a is configured separately from the case 3. That is, the bottom portion 5 a is separated from the case portion 3 and is made of a different material, and is joined to the case portion 3. In the present invention, the bottom part joined to the case part will be described as a part of the case part even when the bottom part is constituted separately.

  The bottom 5a has a step on the upper surface side. That is, the part accommodated in the case part 3 is thicker than the other parts. A bottom fitting portion 31 is formed at the lower end of the case portion 3, similarly to the lid fitting portion 19. That is, the bottom fitting part 31 is a step part in which the lower edge part of the case part 3 was formed, for example. Note that the metal plating 4 is also formed in the bottom fitting portion 31.

  The bottom part 5 a is arranged so as to fit into the bottom fitting part 31. The bottom 5a is made of, for example, metal, and is fixed at the lid fitting portion 19 with solder or an adhesive. When solder is used for fixing the bottom portion 5a, Au and Sn plating for facilitating solder bonding may be applied to the solder placement portion in advance. Further, when an adhesive is used for fixing the bottom portion 5a, it is desirable to cover the adhesive portion with the coating film 29.

  The bottom 5a functions as a heat sink for the photoelectric component 7 disposed on the top surface. The thermal conductivity of the bottom part 5a can be set as appropriate according to the components arranged on the upper part, but is preferably 150 [W / (m · k)] or more, for example. By doing so, for example, the Peltier element can be operated efficiently.

  Further, it is desirable that the bottom portion 5a eliminates the difference in thermal linear expansion from the photoelectric component 7 disposed inside as much as possible. Therefore, it is desirable to use a low thermal linear expansion and high thermal conductivity metal material such as a copper tungsten alloy or a copper molybdenum alloy. In addition, warping of the semiconductor laser module 1a can be prevented by using the same material for the bottom 5a and the lid 23. Therefore, it is possible to prevent deviation of the optical axis.

  According to the semiconductor laser module 1a according to the second embodiment, the same effect as that of the semiconductor laser module 1 can be obtained. Moreover, since the bottom part 5a functions as a heat sink, the photoelectric component 7 can be operated efficiently.

  Next, a third embodiment will be described. FIG. 6 is a front sectional view showing the semiconductor laser module 1b, and corresponds to FIG. The semiconductor laser module 1b has substantially the same configuration as that of the semiconductor laser module 1a, except that the fiber pipe 17 is integrated with the case portion 3, and the bottom portion 5b is formed separately from the case portion 3. It differs in that it is placed inside.

  The fiber pipe 17 is formed integrally with the case portion 3. Therefore, the fiber pipe 17 is formed of resin. That is, the metal plating 4 is formed on the outer surface of the fiber pipe 17 similarly to the case portion 3. The method for fixing the optical fiber 21 to the fiber pipe 17 and the formation of the coating film 29 on the adhesive portion are the same as in the above-described embodiment.

  The bottom part 5b is formed separately from the case part 3 in the same manner as the above-described bottom part 5a. However, unlike the bottom portion 5a, the bottom portion 5b does not have a step or the like on the upper surface and is configured to be flat. The bottom portion 5 b is completely fitted into the inner surface of the case portion 3. That is, in the semiconductor laser module 1a, the case portion 3 is disposed on the upper surface of the bottom portion 5a, and the bottom portion 5a is exposed to the side of the case portion 3. However, in the semiconductor laser module 1b, the bottom portion 5b is completely disposed in the case portion 3 and is not exposed outside except for the back surface.

  In addition, the fixing method of the bottom part 5b and the case part 3 and the formation method of the coating film 29 are the same as that of embodiment mentioned above. The material and function of the bottom 5b are the same as those of the bottom 5a.

  According to the semiconductor laser module 1b according to the third embodiment, the same effects as those of the semiconductor laser module 1a and the like can be obtained. Moreover, since the fiber pipe 17 is integral with the case part 3, the number of parts is small, and since the fiber pipe 17 is formed of resin, the cost can be reduced. The bottom 5b is a single plate-like member, and no step is formed. For this reason, even if it uses a copper tungsten alloy, a copper molybdenum alloy, etc., processing is easy.

  Next, a fourth embodiment will be described. FIG. 7 is a side sectional view showing the semiconductor laser module 1c and corresponds to FIG. The semiconductor laser module 1 c has substantially the same configuration as the semiconductor laser module 1 b, but differs in that a shelf 33 is formed on the inner surface of the case portion 3. The bottom 5b has the same configuration as that of the semiconductor laser module 1b.

  The shelf portion 33 is disposed on the inner surface of the case portion 3 and in the vicinity of the hole 27 (lower portion of the hole 27). The shelf part 33 protrudes inward substantially perpendicularly to the inner surface of the case part 3. On the shelf 33, lands 35 for fixing solder are formed. The end of the conducting wire 25 that is electrically connected to the photoelectric component 7 is micro-joined to the land 35 by welding or the like. Further, the land 35 is electrically connected to the solder fixing portion 11. Accordingly, the terminal 9 is electrically connected to the photoelectric component 7.

  FIG. 8 is a single perspective view of the case portion 3 (excluding the bottom portion 5b) used in the semiconductor laser module 1c. The land 35 is formed for each hole 27 and is electrically connected to each solder fixing portion 11. The resin exposed portion 15 is formed on the outer periphery of the solder fixing portion 11 and the land 35. Therefore, the solder fixing portion 11 and the land 35 are insulated from the metal plating 4 by the resin exposed portion 15. In addition, the outer peripheral surface of the case part 3 is the same as that of embodiment mentioned above.

  According to the semiconductor laser module 1c according to the fourth embodiment, the same effects as those of the semiconductor laser module 1 and the like can be obtained. Further, since the fiber pipe 17 is integrated with the case portion 3, the number of parts is small, and it is not necessary to directly connect the conductive wire 25 to the terminal 9, and it is sufficient to connect to the wider land 35. Excellent workability. Moreover, since the land 35 is wide, the handling property of the conducting wire 25 is excellent.

  Next, a fifth embodiment will be described. FIG. 9 is a side sectional view showing the semiconductor laser module 1d, and corresponds to FIG. FIG. 10 is a single perspective view of the case 3 (excluding the bottom 5b) used in the semiconductor laser module 1d. The semiconductor laser module 1 d has substantially the same configuration as the semiconductor laser module 1 c, but differs in that a shelf 33 is formed on the inner surface of the case portion 3. The bottom 5b has the same configuration as that of the semiconductor laser module 1b.

  The shelf portion 33 is disposed on the inner surface of the case portion 3 and in the vicinity of the hole 27 (lower portion of the hole 27). In the semiconductor laser module 1d, an inclined portion 37 is formed on the shelf portion 33. The inclined portion 37 is formed so that the protrusion margin from the side surface of the case portion 3 increases downward. The inclination angle of the inclined portion 37 is formed at about 60 ° with respect to the horizontal plane (bottom surface). In the present embodiment, the shelf portion 33 is formed inside the case portion 3.

  On the shelf portion 33 on the inner surface side of the case portion 3, a solder fixing land 35 is formed. The land 35 is soldered at the end of the conductive wire 25 that is electrically connected to the photoelectric component 7, and is electrically connected to the solder fixing portion 11. Accordingly, the terminal 9 is electrically connected to the photoelectric component 7.

  The resin exposed portion 15 on the inner surface side of the case portion 3 is formed on the outer periphery of the solder fixing portion 11 and the land 35, and the resin exposed portion 15 on the outer surface side of the case portion 3 is formed on the outer periphery of the solder fixing portion 11. The solder fixing portion 11 and the resin exposed portion 15 on the inner and outer surfaces of the case portion 3 are formed on the inclined portion 37. Therefore, the solder fixing portion 11 and the land 35 are insulated from the metal plating 4 by the resin exposed portion 15. The coating film 29 (not shown) is disposed on the inclined portion 37.

  According to the semiconductor laser module 1d according to the fifth embodiment, the same effects as those of the semiconductor laser module 1 and the like can be obtained. In addition, since the inclined portion 37 is formed on the shelf portion 33, the solder fixing portion 11 and the resin exposed portion 15 can be easily formed.

  For example, when the metal layer is patterned by etching as in the printed circuit board manufacturing method, it can be performed only from above without changing the exposure direction or the direction of the case portion 3. Further, when the metal layer is removed by laser after the entire surface is plated, light can be irradiated in a lump without changing the laser irradiation direction or the direction of the case portion 3. Therefore, it is easy to form the solder fixing portion 11 and the resin exposed portion 15 on the case portion 3, and the manufacturing efficiency is further improved.

  Next, a sixth embodiment will be described. FIG. 11 is a perspective view showing the semiconductor laser module 40, and FIG. 12 is a front sectional view of the semiconductor laser module 40. In FIG. 12, the illustration of the photoelectric component 7 is omitted. The semiconductor laser module 40 is a coaxial type semiconductor laser module. In the semiconductor laser module 40, a cylindrical lid portion (not shown) is fixed to the upper surface of the case portion 41, and the internal photoelectric component 7 is sealed.

  The case part 41 is substantially ring-shaped, and the bottom part 43 is fixed to the inner peripheral side. The joining method of the case part 41 and the bottom part 43 is the same as that of embodiment mentioned above. On the bottom 43, the photoelectric component 7 is fixed. The case portion 41 is made of resin, and the bottom portion 43 is made of, for example, a copper tungsten alloy or a copper molybdenum alloy.

  The surface of the case portion 41 is covered with the metal plating 4 except for the resin exposed portion 15. Further, as shown in FIG. 12, a hole 27 is formed in the case portion 41. The terminal 9 is inserted into the hole 27. A solder fixing portion 11 is formed around the hole 27. A resin exposed portion 15 is formed on the outer peripheral portion of the solder fixing portion 11. The terminal 9 is joined to the solder fixing portion 11 by solder. Further, a coating film 29 (not shown) is provided on the inner and outer surfaces of the case portion 3 so as to cover the resin exposed portion 15. The coating film 29 may be further provided at the joint between the bottom portion 43 and the case portion 3.

  According to the semiconductor laser module 40 according to the sixth embodiment, the same effects as those of the semiconductor laser module 1 and the like can be obtained. Thus, the present invention can also be applied to a coaxial type semiconductor laser module.

  Next, still another embodiment will be described. In the embodiment described above, a detailed description of the thickness of the coating film 29 is omitted, but it is desirable to set the thickness of the coating film 29 within an optimal range. FIG. 13 is a diagram showing a sealing process in the vicinity of the terminal 9 and corresponds to FIG.

  As described above, first, the terminal 9 is inserted into the hole 27 as shown in FIG. Next, as shown in FIG. 13B, the terminal 9 is fixed to the solder fixing portion 11 by the solder 13. After fixing the terminal 9, a coating film 29 a is provided so as to cover the resin exposed portion 15 and the solder 13 as shown in FIG. The coating film 29a may be formed on either the inner or outer surface as long as the application surface of each exposed portion of the case portion 3 can be unified, and more preferably on both the inner and outer surfaces.

The coating film 29a is an inorganic polymer material that has insulating properties and does not allow moisture or the like to permeate. As such an inorganic polymer material, an inorganic polymer material derived from polysilazane is desirable. By forming the coating film 29a with a liquid containing polysilazane, the material can be formed into a ceramic film substantially made of SiO ₂ by converting the coating film 29a into a ceramic. Therefore, the coating film 29a can prevent moisture from entering the inside of the case part 3 after the case part 3 is sealed and maintain airtightness. Moreover, by forming inside the case part 3, it can prevent that the impurity in resin which comprises the case part 3 inhibits the operation | movement of the photoelectric component 7 (for example, LD element).

  The polysilazane used in the present invention may be a polysilazane having at least a Si—H bond or an N—H bond in the molecule. Polysilazanes include those having a chain, cyclic or cross-linked structure, or those having a plurality of these structures in the molecule at the same time, and these can be used alone or in a mixture. The polysilazane used is not particularly limited. Perhydropolysilazane is preferable from the viewpoint of hardness and denseness of the obtained film, and organopolysilazane is preferable from the viewpoint of flexibility.

  FIG. 14A is an enlarged view of part B in FIG. In the present invention, if the coating film 29a is too thin, moisture or the like may enter the case due to the occurrence of pinholes or the like. Accordingly, the total thickness of the coating film 29a is desirably 1 μm or more. By doing in this way, generation | occurrence | production of a pinhole etc. can be suppressed.

  Further, as shown in FIG. 14B, the coating film may have a two-layer structure. In this case, a silane coupling is applied to the coating film 29b as the first coating layer in order to improve the adhesion with the molding resin (resin exposed portion 15), the metal plating 4, the terminal 9, and the solder 13 which is a polysilazane base. An agent may be blended. The coating film 29c, which is the second coating layer, can bypass the transmission of helium gas by blending an inorganic layered compound with polysilazane.

  Usually, if the coating film is too thick, the coating film may be cracked. However, cracking of the coating film can be prevented by blending the inorganic layered compound. Therefore, by blending the inorganic layered compound, the total thickness of the coating films 29b and 29c can be increased, and high watertightness and airtightness can be ensured. In addition, even if it is a case where an inorganic layered compound is mix | blended, it is desirable that the thickness (total thickness) of a coating film is 10 micrometers or less. By doing in this way, generation | occurrence | production of a crack can be suppressed reliably.

  The inorganic layered compound used in the present invention is smectite such as montmorillonite, beidellite, saponite, hectorite, soconite, and chivensite, and particularly preferably a clay mineral mainly composed of montmorillonite.

  Montmorillonite is an organic bentonite that can be dispersed in an organic solvent by introducing an organic agent such as a surfactant between layers using its cation exchange property. Therefore, it is a very suitable material that can be nano-dispersed in a thin plate having a size of 0.1 μm to 1 μm and a thickness of 1 nm in a silica coating solution containing polysilazane as a main component. This organic bentonite is dispersed in advance in an organic solvent such as xylene and dibutyl ether at a concentration of 3% to 5%, mixed in the silica coating solution so as to have the desired number of parts, and stirred, and the organic bentonite mixed silica A coating solution can be made.

  The inorganic layered compound is desirably blended in an amount of 10 to 40 parts by mass with respect to 100 parts by mass of the inorganic polymer material. If it is less than 10 parts by mass, it is not possible to obtain a sufficient detouring effect at the time of gas permeation and an effect of preventing cracking. Moreover, when it exceeds 40 mass parts, since an inorganic layered compound will increase too much, it will become difficult to disperse | distribute in an inorganic polymer material.

  Further, as shown in FIG. 15, the coating film may have a three-layer structure. In this case, a silane coupling is applied to the coating film 29d as the first coating layer in order to improve the adhesion between the molding resin (resin exposed portion 15), the metal plating 4, the terminal 9, and the solder 13 serving as a polysilazane base. An agent may be blended. The coating film 29e, which is the second coating layer (intermediate layer), can not only bypass permeation of helium gas by blending an inorganic layered compound with polysilazane, but also increase the total thickness of the coating film. it can. Moreover, defects such as pinholes in the second coating film 29e can be repaired by forming a coating film of the coating film 29f that is the third coating layer. Thus, the coating film can also have a multilayer structure.

  The aspect of the coating film was changed, and the surface hardness, helium gas leak property, presence of cracks, and adhesion of the coating film were evaluated.

Example 1
As shown in FIG. 14A, a coating film having a single layer structure was formed. The coating film was formed on the resin exposed portion on the outer surface of the case portion. As the coating film, the same coating layer was applied twice. First, a polysilazane compound containing perhydropolysilazane as a main component was applied. Furthermore, the polysilazane compound which has the same perhydropolysilazane as a main component was apply | coated on it. That is, the coating film of a polysilazane compound mainly composed of perhydropolysilazane was applied twice to increase the film thickness.

(Example 2)
As shown in FIG. 14B, a two-layer coating film was formed. The coating film was formed on the resin exposed portion on the outer surface of the case portion. First, as the first coating layer, a coating film was provided in which 40 parts by mass of montmorillonite, which is an inorganic layered compound, was added to 100 parts by mass of a polysilazane compound containing perhydropolysilazane as a main component. Further thereon, a coating film made of a polysilazane compound containing perhydropolysilazane as a main component was provided as a second coating layer.

(Example 3)
As shown in FIG. 15, it was set as the coating film of 3 layer structure. The coating film was formed on the resin exposed portion on the outer surface of the case portion. First, a polysilazane compound containing perhydropolysilazane as a main component was provided as a first coating layer, and montmorillonite 10 was added to 100 parts by mass of a polysilazane compound containing perhydropolysilazane as a second coating layer. A coating film blended with parts by mass was provided. Further thereon, a coating film made of a polysilazane compound containing perhydropolysilazane as a main component was provided as a third coating layer.

Example 4
Example 2 was the same as Example 3 except that 40 parts by mass of montmorillonite was added to 100 parts by mass of a polysilazane compound containing perhydropolysilazane as a main component as the second coating layer.

(Comparative Example 1)
As shown in FIG. 14A, a coating film having a single layer structure was formed. The coating film was formed on the resin exposed portions on both sides of the case portion. The coating film was formed by applying a polysilazane compound containing perhydropolysilazane as a main component.

(Comparative Example 2)
As shown in FIG. 14A, a coating film having a single layer structure was formed. The coating film was formed on the resin exposed portion on the outer surface of the case portion. The coating film was provided by blending 40 parts by mass of montmorillonite with 100 parts by mass of a polysilazane compound containing perhydropolysilazane as a main component.

(Comparative Example 3)
As shown in FIG. 14A, a coating film having a single layer structure was formed. As the coating film, the same coating layer was applied three times. First, a polysilazane compound containing perhydropolysilazane as a main component was applied. Moreover, the polysilazane compound which has the same perhydropolysilazane as a main component was apply | coated on it. Furthermore, the polysilazane compound which has the same perhydropolysilazane as a main component was apply | coated on it. That is, the coating film of a polysilazane compound mainly composed of perhydropolysilazane was applied three times to increase the thickness.

(Comparative Example 4)
Example 2 was the same as Example 3 except that 5 parts by mass of montmorillonite was added to 100 parts by mass of a polysilazane compound containing perhydropolysilazane as a main component as the second coating layer.

(Comparative Example 5)
Example 2 was the same as Example 3 except that 45 parts by mass of montmorillonite was added to 100 parts by mass of a polysilazane compound containing perhydropolysilazane as a main component as the second coating layer.
The results are shown in Table 1.

  The coating film thickness was the total thickness even when the coating film was composed of a plurality of layers. Moreover, when it formed in the inner and outer surface of a case, it was set as the thickness of the one coating film. The surface hardness is a hardness according to a pencil hardness test of a paint general test method defined in JIS K 5600. The helium gas leak property was measured by a helium leak test defined in JIS Z2331. The crack of the coating film was visually confirmed for the presence or absence of the crack. The adhesion of the coating film was confirmed by visual observation of the peeling of the coating film.

In each of Examples 1 to 4 and Comparative Examples 1 to 5, the adhesion of the coating film was good. In Examples 1 to 4, the coating film thickness was 1 μm or more, and the helium leak amount was 1 × 10 ⁻⁹ [Pa / m ³ / sec] or less. Moreover, the crack of the coating film was not seen. The surface hardness was 9H, which was sufficient. In particular, by adding montmorillonite, which is an inorganic layered compound, to a two-layer structure or more, the amount of helium leak is lower.

On the other hand, in Comparative Examples 1 and 2, since the thickness of the coating film was less than 1 μm, the amount of helium leak exceeded 1 × 10 ⁻⁹ [Pa / m ³ / sec]. In Comparative Example 3, since the coating film was thickened without adding the inorganic layered compound, the coating film was cracked. In Comparative Example 4, since the amount of the inorganic layered compound added was as small as 5 parts by mass, cracking occurred as in Comparative Example 3. In Comparative Example 5, the surface hardness was lowered because the amount of the inorganic layered compound added was too large at 45 parts by mass.

Thus, the amount of helium leak can be reliably reduced by optimizing the thickness of the coating film. In particular, even when the covering film has a very thin structure of about 1 μm to 3 μm, the gas bypass effect and the silica reinforcing effect can be obtained by montmorillonite nanocomposited in the silica of the intermediate layer. Therefore, even if the coating film is thickened, the resin exposed portion is protected by the coating film having a pencil hardness of 9H or more without cracking. With this coating film, the amount of helium leak in the helium leak test defined in JIS Z2331 by the semiconductor laser module product is 1 × 10 ⁻⁹ [Pa / m ³ / sec] or less, and a desired gas barrier property can be secured. it can.

  As mentioned above, although embodiment of this invention was described referring an accompanying drawing, the technical scope of this invention is not influenced by embodiment mentioned above. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the technical idea described in the claims, and these are naturally within the technical scope of the present invention. It is understood that it belongs.

  For example, it goes without saying that the configurations described in the embodiments can be combined with each other.

DESCRIPTION OF SYMBOLS 1, 1a, 1b, 1c, 1d, 40 ......... Semiconductor laser module 3, 41 ......... Case part 5, 5a, 5b, 43 ......... Bottom part 7 ...... Photoelectric component 9 ...... Terminal 11 ... ... solder fixing part 13 ... solder 15 ... resin exposed part 17 ... fiber pipe 19 ... lid fitting part 21 ... optical fiber 23 ... lid part 25 ... lead 27 ... ... Hole 29, 29a, 29b, 29c, 29d, 29e, 29f ......... Coating film 31 ......... Bottom fitting part 33 ......... Shelves 35 ......... Land 37 ......... Inclined part

Claims (13)

A semiconductor laser module containing photoelectric components therein,
A case portion, a lid portion disposed on the upper portion of the case portion, a photoelectric component disposed inside the case portion, a terminal electrically connected to the photoelectric component, and led out of the case portion;
Comprising
The case portion is formed of a resin, a hole is formed in the lead-out portion of the terminal of the case portion, a solder fixing portion soldered to the terminal around the hole, and a solder fixing portion A resin exposed portion formed around,
The surface of the case portion is coated with an inorganic polymer material in a state in which at least the resin exposed portion is removed and metal plating is performed and the terminal is joined to the solder fixing portion. A semiconductor laser module having a film formed thereon.   The semiconductor laser module according to claim 1, wherein the coating film has a thickness of 1 μm or more.   The semiconductor laser module according to claim 1, wherein the inorganic polymer material contains polysilazane as a main component.   4. The semiconductor laser module according to claim 1, wherein the coating film includes a plurality of layers, and an inorganic layered compound is added to at least one layer. 5.   5. The semiconductor laser module according to claim 4, wherein the coating film comprises three layers, and an inorganic layered compound is added to the intermediate layer.   The semiconductor laser module according to claim 4, wherein the inorganic layered compound contains montmorillonite as a main component.   7. The semiconductor laser module according to claim 4, wherein the inorganic layered compound is blended in an amount of 10 to 40 parts by mass with respect to 100 parts by mass of the inorganic polymer material.   The semiconductor laser module according to claim 1, wherein the photoelectric component includes a Peltier element.   The bottom part arranged in the lower part of the case part is made of metal, the thermal conductivity of the contact part with the Peltier element is 150 W / (m · K) or more, and functions as a heat sink for the photoelectric component. The semiconductor laser module according to claim 8.   10. The semiconductor laser module according to claim 9, wherein the bottom portion is made of one of a copper tungsten alloy and a copper molybdenum alloy.   8. The semiconductor laser module according to claim 1, wherein a bottom portion of the case portion is integrally formed of a resin, and a metal plating is applied to a surface of the bottom portion.   11. The semiconductor laser module according to claim 9, wherein the lid portion is made of metal and is made of the same material as the bottom portion. The surface on which the solder fixing portion and the resin exposed portion are formed is formed obliquely with respect to the side surface of the case portion. Semiconductor laser module.

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