JP2013138259A - Nitride semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate that can be used for a semiconductor device.SOLUTION: A nitride semiconductor substrate 10a comprises a principal plane and an indication part. The principal plane 11 is a plane inclined at an angle from 71° or more to 79° or less toward a [1-100] direction from (0001) plane or a plane inclined at an angle from 71° or more to 79° or less toward a [-1100] direction from (000-1) plane. The indication part indicates (-1017) plane, (10-1-7) plane or a plane inclined at angle from -4° or more to 4°or less toward the [1-100] direction from the above planes and also inclined at an angle from -0.5° or more to 0.5° or less toward a direction perpendicular to the [1-100] direction.

Description

  The present invention relates to a nitride semiconductor substrate, and more particularly to a gallium nitride (GaN) substrate.

  A nitride semiconductor substrate such as a GaN substrate having an energy band gap of 3.4 eV and high thermal conductivity has attracted attention as a material for a semiconductor device such as a short wavelength optical device or a power electronic device. A GaN substrate as an example of such a nitride semiconductor substrate has an orientation flat (hereinafter also referred to as orientation flat or OF) or a notch in part of the outer periphery in order to facilitate alignment or discrimination of crystal orientation. (For example, Patent Documents 1 and 2).

JP 2008-42157 A JP 2002-356398 A

  In Patent Documents 1 and 2, an OF or notch is formed on a GaN substrate having a (0001) plane as a main surface. However, a method for forming an OF or notch on a nitride semiconductor substrate having a main surface inclined from the (0001) plane is not known. If the orientation flat or notch is not formed, the plane direction, the polar plane, etc. are difficult to understand, and the semiconductor device may be manufactured in an unexpected direction. For this reason, there is a problem that it is difficult to form a semiconductor device using a nitride semiconductor substrate having a main surface inclined from the (0001) plane.

  Accordingly, the present invention is to provide a nitride semiconductor substrate that can be used in a semiconductor device.

  As a result of diligent research, the inventor has found that a nitride semiconductor substrate capable of improving the oscillation yield when a semiconductor laser is manufactured is a main surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane. Or a surface inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. And as a result of earnestly researching to specify the plane orientation in order to use the nitride semiconductor substrate having this main surface for a semiconductor device, the (−1017) plane or the (10-1-7) plane vicinity is easily cleaved. I found out that

  Therefore, the nitride semiconductor substrate of the present invention includes a main surface and a display unit. The main surface is a surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or a surface inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. . The display section is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, the (10-1-7) plane, or these planes, and orthogonal to the [1-100] direction. The surface inclined in the direction of −0.5 ° or more and 0.5 ° or less is shown.

The nitride semiconductor substrate of the present invention has a main surface that can improve the yield when a semiconductor device is manufactured. In the nitride semiconductor substrate having this main surface, depending on the display unit, the −1017 plane, the (10-1-7) plane, or −4 ° in the [1-100] direction from these planes.
The inventor of the present invention has clarified for the first time that a surface inclined by 4 ° or less and -0.5 ° or more and 0.5 ° or less in a direction orthogonal to the [1-100] direction is specified. With this display portion, when a semiconductor device is manufactured using a nitride semiconductor substrate having this main surface, a surface that can be easily cleaved can be specified. Thereby, it is possible to align or discriminate the crystal orientation using a surface that is easy to cleave. Therefore, a semiconductor device with improved characteristics can be manufactured by using the nitride semiconductor substrate of the present invention. Therefore, the nitride semiconductor substrate of the present invention can be used for a semiconductor device.

  In the nitride semiconductor substrate, preferably, the display portion is an orientation flat, and the orientation flat is −4 in the [1-100] direction from the (−1017) plane, the (10-1-7) plane, or these planes. It is a surface inclined at an angle of not less than 4 ° and not more than 4 ° and at an angle of not less than −0.5 ° and not more than 0.5 ° in a direction perpendicular to the [1-100] direction.

  In the (−1017) plane, the (10-1-7) plane, or a direction that is inclined from −4 ° to 4 ° in the [1-100] direction and orthogonal to the [1-100] direction from these planes— Since the surface inclined by 0.5 ° or more and 0.5 ° or less has the property of being easily cleaved, the orientation flat can be easily formed.

  In the nitride semiconductor substrate, preferably, the (11-20) plane or a direction inclined from −4 ° to 4 ° in the [1-100] direction from this plane and perpendicular to the [1-100] direction is − A second orientation flat having a surface inclined by 0.5 ° or more and 0.5 ° or less is further provided.

  (11-20) plane, or from this plane, tilted in the [1-100] direction from −4 ° to 4 ° and from −0.5 ° to 0.5 ° in the direction perpendicular to the [1-100] direction Since the inclined surface has the property of being easily cleaved, the second OF can be easily formed. Thereby, the front and back of the nitride semiconductor substrate can also be discriminated.

  In the nitride semiconductor substrate, preferably, the main surface is a (20-21) plane or a (−202-1) plane, and the display unit indicates a (−1017) plane or a (10-1-7) plane. .

  The (20-21) plane or the (-202-1) plane can improve characteristics particularly when a semiconductor device is manufactured. Further, the (−1017) plane or the (10-1-7) plane is orthogonal to the (20-21) plane or the (−202-1) plane and has a property of being easily cleaved. Therefore, a semiconductor device with improved characteristics can be manufactured.

  As described above, the nitride semiconductor substrate of the present invention can be used for a semiconductor device.

1 is a plan view schematically showing a nitride semiconductor substrate in a first embodiment of the present invention. It is a figure which shows roughly the main surface of the nitride semiconductor substrate in Embodiment 1 of this invention, and the crystal orientation of orientation flats. It is a top view which shows roughly the nitride semiconductor substrate in Embodiment 2 of this invention. It is a figure which shows roughly the crystal orientation of the main surface of the nitride semiconductor substrate in Embodiment 2 of this invention, and a 2nd orientation flat. It is a top view which shows roughly the nitride semiconductor substrate in Embodiment 3 of this invention. FIG. 6 is an enlarged plan view of a region R in FIG. 5. It is a top view which shows roughly the nitride semiconductor substrate in Embodiment 4 of this invention. FIG. 10 is a plan view schematically showing a nitride semiconductor substrate in a fifth embodiment of the present invention. It is sectional drawing which shows schematically the semiconductor laser in Embodiment 6 of this invention. It is a schematic diagram which shows the position of the waveguide when the semiconductor laser in Embodiment 6 of this invention is seen from upper direction. It is a figure which shows roughly the crystal orientation of the end surface of the semiconductor laser in Embodiment 6 of this invention, and the main surface of a nitride semiconductor substrate. In Example 1, it is a figure which shows the scanning electron microscope image of the resonator end surface. In Example 2, it is a figure which shows the relationship between the inclination angle from a (0001) plane of a GaN board | substrate to a [1-100] direction, and an oscillation yield. In Example 3, it is a figure which shows the relationship between the shift | offset | difference angle (surface accuracy) of the direction orthogonal to the [1-100] direction from the (-1017) plane of the orientation flat of a GaN substrate, and an oscillation yield.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated. In the present specification, individual orientations are indicated by [] and individual planes are indicated by (). The individual orientation and the individual plane include an equivalent orientation and plane, respectively. As for the negative index, “−” (bar) is attached on the number in crystallography, but in this specification, a negative sign is attached before the number.

(Embodiment 1)
With reference to FIGS. 1 and 2, nitride semiconductor substrate 10a in the present embodiment will be described. As shown in FIG. 1, the nitride semiconductor substrate 10a in the present embodiment includes a main surface 11 and an orientation flat 12 as a display unit.

  The planar shape of the main surface 11 is, for example, a circle. The principal surface 11 is inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or is inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. Surface. A plane inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane is a plane inclined from −4 ° to 4 ° from the (20-21) plane. This surface is a Ga-rich surface where many Ga atoms are exposed. A plane inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane is a plane inclined from −4 ° to 4 ° from the (−202-1) plane. This surface is an N-rich surface where many N atoms are exposed. That is, the main surface 11 is a (20-21) plane, a (−202-1) plane, or a plane inclined from −4 ° to 4 ° from these planes.

  The main surface 11 is a surface inclined from 73 ° to 77 ° in the [1-100] direction from the (0001) surface, or a surface inclined from 73 ° to 77 ° in the [−1100] direction from the (000-1) surface. That is, it is preferably a (20-21) plane, a (-202-1) plane, or a plane inclined by −2 ° or more and 2 ° or less from these planes. The main surface 11 is a surface inclined by 75 ° in the [1-100] direction from the (0001) surface, a surface inclined by 75 ° in the [-1100] direction from the (000-1) surface, that is, a (20-21) surface, Or it is preferable that it is (-202-1) plane.

The main surface 11 may be inclined in the [1-100] direction or the direction orthogonal to the [-1100] direction. In this case, the inclination angle is, for example, not less than −0.5 ° and not more than 0.5 ° in the direction orthogonal to the [1-100] direction or the direction orthogonal to the [−1100] direction.

  Here, the plane orientation of a plane inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane constituting the main surface 11 will be described with reference to FIG. As shown in FIG. 2, the main surface 11 is a surface inclined at an angle θ in the [1-100] direction from the (0001) plane. In other words, the main surface 11 is a surface inclined at an angle θ from the [0001] direction to the [1-100] direction. The angle θ is 71 ° or greater and 79 ° or less, preferably 73 ° or greater and 77 ° or less, and more preferably in the vicinity of 75 °. The (20-21) plane is a plane inclined about 75 ° (= angle θ) in the [1-100] direction from the (0001) plane. The (0001) plane is a plane where Ga atoms are exposed.

  A surface inclined by 71 ° or more and 79 ° or less in the [−1100] direction from the (000-1) surface constituting the main surface 11 can be considered in the same manner, and the description using the drawings is omitted. The (−202-1) plane is a plane inclined about 75 ° in the [−1100] direction from the (000-1) plane. The (000-1) plane is a plane where N atoms are exposed.

  When the tilt angle is not less than 71 ° and not more than 79 °, the yield of a semiconductor device (for example, a semiconductor laser) manufactured using this nitride semiconductor substrate 10a can be improved (for example, 50% or more). When the tilt angle is not less than 73 ° and not more than 77 °, the yield of a semiconductor device (for example, a semiconductor laser) manufactured using the nitride semiconductor substrate 10a can be further improved (for example, 75% or more). When the tilt angle is around 75 °, the yield of a semiconductor device (for example, a semiconductor laser) manufactured using nitride semiconductor substrate 10a can be further improved (for example, 85% or more).

  The orientation flat 12 is a portion obtained by cutting a part of the outer periphery into a bow shape in order to indicate the crystal orientation of the nitride semiconductor substrate 10a. In other words, the orientation flat 12 is a straight portion formed in a part of a circle when the main surface 11 is viewed from above. The orientation flat 12 is substantially orthogonal to the main surface 11. Further, the orientation flat 12 is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, the (10-1-7) plane, or these planes, and the [1-100] direction. It is a surface which is −0.5 ° or more and 0.5 ° or less in a direction perpendicular to the direction.

  Here, the plane orientation of the orientation flat 12 will be described with reference to FIG. As shown in FIG. 2, the orientation flat 12 is in the vicinity of the (−1017) plane or the (10-1-7) plane. The (−1017) plane or the (10-1-7) plane is substantially orthogonal (90.10 °) to the (20-21) plane or the (−202-1) plane. For this reason, the orientation flat 12 is substantially orthogonal to the main surface 11. The (−1017) plane and the (10-1-7) plane are the conventional c plane (plane equivalent to the (0001) plane), m plane (plane equivalent to the (1-100) plane) or a plane ( This is different from conventional cleavage planes such as (11-20) plane.

  The direction of the (−1017) plane or the (10-1-7) plane is the [−1014] direction or the [10-1-4] direction.

  In the (−1017) plane, the (10-1-7) plane, or a direction that is inclined from −4 ° to 4 ° in the [1-100] direction and orthogonal to the [1-100] direction from these planes— As a result of earnest research, the present inventors have found that a surface inclined by 0.5 ° or more and 0.5 ° or less has a property of being easily cleaved. Further, the (−1017) plane, the (10-1-7) plane, or a direction inclined from −4 ° to 4 ° in the [1-100] direction from these planes and orthogonal to the [1-100] direction Further improving (for example, 50% or more) the yield of a semiconductor device (for example, a semiconductor laser) fabricated using a nitride semiconductor substrate 10a having an orientation flat 12 whose surface is inclined by −0.5 ° or more and 0.5 ° or less. The present inventor has also found that this is possible.

  The inclination angle of the [1-100] direction with respect to the (−1017) plane or the (10-1-7) plane of the orientation flat 12 is −4 ° to 4 °, preferably −2 ° to 2 °, 0 The vicinity is more preferable. In the case of −4 ° or more and 4 ° or less, the yield of a semiconductor device (for example, a semiconductor laser) manufactured using the nitride semiconductor substrate 10a can be improved (for example, 50% or more). In the case of −2 ° or more and 2 ° or less, the yield of a semiconductor device manufactured using the nitride semiconductor substrate 10a can be further improved (for example, 75% or more). In the case of near 0 °, the yield of a semiconductor device manufactured using nitride semiconductor substrate 10a can be further improved (for example, 85% or more).

  The inclination angle of the orientation flat 12 in the direction perpendicular to the [1-100] direction with respect to the (−1017) plane or the (10-1-7) plane is −0.5 ° or more and 0.5 ° or less, and −0.2 It is more preferably at least 0 ° and at most 0.2 °, more preferably around 0 °. In the case of −0.5 ° or more and 0.5 ° or less, the yield of a semiconductor device (for example, a semiconductor laser) manufactured using this nitride semiconductor substrate 10a can be improved (for example, 50% or more). In the case of −0.2 ° or more and 0.2 ° or less, the yield of the semiconductor device manufactured using the nitride semiconductor substrate 10a can be further improved (for example, 75% or more). In the case of near 0 °, the yield of a semiconductor device manufactured using nitride semiconductor substrate 10a can be further improved (for example, 80% or more).

  When the orientation flat 12 is inclined in the [1-100] direction and in the direction orthogonal to the [1-100] direction, the orientation flat 12 is inclined in the [1-100] direction and [1-100]. When not inclined in the direction orthogonal to the direction, not inclined in the [1-100] direction, and inclined in the direction orthogonal to the [1-100] direction, and inclined in the [1-100] direction And it may be any of the cases where it is not inclined in the direction orthogonal to the [1-100] direction.

  The (−1017) plane or the (10-1-7) plane of the orientation flat 12 is orthogonal to the (20-21) plane or (−202-1) plane of the main surface 11. In other words, the (20-21) plane is orthogonal to the (−1017) plane and the (10-1-7) plane. The (−202-1) plane is orthogonal to the (−1017) plane and the (10-1-7) plane. This case is most preferable as the nitride semiconductor substrate 10a. When the main surface 11 is inclined from the (20-21) plane or the (-202-1) plane in the [1-100] direction by -4 ° or more and 4 ° or less, and the orientation flat 12 (−1017) plane or ( 10-1-7) It has the same light confinement effect as the case where it is inclined from -4 ° to 4 ° in the [1-100] direction from the plane. On the other hand, the tilting angle of the orientation flat 12 in the direction orthogonal to the [1-100] direction from the (−1017) plane or the (10-1-7) plane differs from that in these cases. For this reason, as a condition required for maintaining a high yield, the allowable range of the tilt angle in the [1-100] direction and the allowable range of the tilt angle in the direction orthogonal to the [1-100] direction are: Each is different.

The nitride semiconductor substrate 10a is, for example, Al _x an In _y is _{Ga (1-xy) N (} 0 ≦ x ≦ 1,0 ≦ y ≦ 1, x + y ≦ 1), Al x Ga (1-x) N (0 ≦ x ≦ 1) is preferable, and GaN is more preferable.

If the size of the nitride semiconductor substrate 10a is circular, the diameter is preferably 10 mm or more, more preferably 30 mm or more, still more preferably 2 inches or more, and most preferably 3 inches or more. The size of the nitride semiconductor substrate 10a is preferably 10 mm square or more, more preferably 18 mm square or more, and even more preferably 30 mm square or more if it is rectangular. If the size of the nitride semiconductor substrate 10a is in the above range, the productivity is good. The thickness of the nitride semiconductor substrate 10a is preferably 100 μm or more and 1000 μm or less. When the thickness is 100 μm or more, the nitride semiconductor substrate 10a can be easily handled, and when the thickness is 1000 μm or less, it can be easily cleaved. The thickness is more preferably 300 μm or more and 400 μm or less.

Next, a method for manufacturing nitride semiconductor substrate 10a in the present embodiment will be described.
First, a base substrate is prepared. The base substrate to be prepared may be the same material as the growing nitride semiconductor substrate 10a or a different material. As such a base substrate, for example, a GaN substrate, a gallium arsenide (GaAs) substrate, a sapphire (Al ₂ O ₃ ) substrate, a zinc oxide (ZnO) substrate, a silicon carbide (SiC) substrate, or the like can be used.

  Next, a nitride semiconductor crystal is grown on the base substrate. The growth method of the nitride semiconductor crystal is not particularly limited. Sublimation method, HVPE (Hydride Vapor Phase Epitaxy) method, MOCVD (Metal Organic Chemical Vapor Deposition) method, MBE (Molecular Vapor phase epitaxy methods such as Beam Epitaxy), liquid phase epitaxy methods such as flux method and ammonothermal method can be used.

  Next, a nitride semiconductor substrate is cut out from the grown nitride semiconductor crystal. At this time, the main surface is inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or is inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. Cut out as you do. For example, when the main surface of the base substrate is the (0001) plane, the nitride semiconductor crystal grows in the [0001] direction. Therefore, for example, the nitride semiconductor substrate is cut out along a plane parallel to main surface 11 in FIG. 2 (a plane inclined at an angle θ from the (0001) plane in the [1-100] direction).

  The cutting method is not particularly limited, and a mechanical removal method such as cutting can be used. Cutting refers to mechanically cutting the nitride semiconductor substrate 10a from the nitride semiconductor crystal with a slicer having an outer peripheral blade, a slicer having an inner peripheral blade, a wire saw, or the like.

  Note that the base substrate may be removed as necessary. Although the method for removing the base substrate is not particularly limited, for example, methods such as cutting and grinding can be used. Cutting is a slicer or wire saw with an outer periphery blade of an electrodeposited diamond wheel that mechanically divides (slices) the interface between the nitride semiconductor crystal and the base substrate, and laser pulses and water molecules are nitride semiconductors. Irradiation or injection to the interface between the crystal and the base substrate, cleavage along the crystal lattice plane, and mechanical separation of the nitride semiconductor crystal and the base substrate by a chemical method such as etching. Grinding refers to scraping in the thickness direction by contacting the surface while rotating the grindstone. As a method for removing the base substrate by grinding, for example, the base substrate is mechanically scraped off with a grinding facility having a diamond grindstone.

  The main surface is inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or the main surface is inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. The production of the nitride semiconductor substrate 10a is not limited to cutting the nitride semiconductor substrate at a desired angle from the nitride semiconductor crystal grown in the c-axis direction. For example, a nitride semiconductor crystal is further grown on the main surface of the nitride semiconductor substrate thus obtained, and the grown nitride semiconductor crystal is cut out in a plane parallel to the main surface of the crystal substrate and nitrided. A nitride semiconductor substrate can be manufactured by manufacturing a nitride semiconductor substrate and processing the main surface of the nitride semiconductor substrate in the same manner as described above. The nitride semiconductor substrate used as the base substrate for further growth (repeated growth) of the nitride semiconductor crystal is not necessarily one substrate, and a plurality of small-sized crystal substrates may be used. It can be joined to form a single crystal during repeated growth. Further, a crystal substrate cut out from a nitride semiconductor crystal bonded by repeated growth can be used as a base substrate and can be repeatedly grown again. Thus, the production cost can be reduced by repeatedly using the nitride semiconductor crystal for growth.

  Next, the outer shape of the nitride semiconductor substrate is processed. Specifically, for example, the outer shape is processed so that the planar shape is circular. The method of the outer shape processing is not particularly limited, and for example, cutting or grinding is performed.

  Next, the orientation flat 12 is formed. The orientation flat 12 is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, (10-1-7) plane, or these planes, and orthogonal to the [1-100] direction. It is a surface inclined in the direction of −0.5 ° to 0.5 °. A method for forming the orientation flat 12 is not particularly limited, but in the nitride semiconductor substrate, the (−1017) plane, the (10-1-7) plane, or these planes in the [1-100] direction from −4 ° to 4 °. For example, cutting or grinding is performed in order to expose a tilted surface that is tilted in the direction orthogonal to the [1-100] direction by −0.5 ° to 0.5 °.

  Next, at least one of polishing and grinding is performed on the main surface of nitride semiconductor substrate 10a as necessary. The rear surface of nitride semiconductor substrate 10a may be further subjected to at least one of polishing and grinding.

  The roughness of the main surface of the nitride semiconductor substrate 10a is preferably 10 nm or less on the basis of Ra. The roughness of the back surface of the nitride semiconductor substrate 10a is preferably 10 μm or less on the basis of Ra. Ra is a surface roughness value measured in accordance with, for example, JIS (Japanese Industrial Standards) B0601.

  By performing the above steps, the nitride semiconductor substrate 10a shown in FIG. 1 can be manufactured. The order of the steps is not particularly limited, and nitride semiconductor substrate 10a may be cut out after orientation flat 12 is formed on the ingot.

  The nitride semiconductor substrate 10a is not particularly limited to the above-described manufacturing method, and may be manufactured by other methods.

  As described above, the nitride semiconductor substrate 10a in the present embodiment is a surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or from the (000-1) plane to [− [1100] and a main surface composed of a surface inclined by 71 ° or more and 79 ° or less, and a (−1017) surface, a (10-1-7) surface, or a -4 ° or more in the [1-100] direction from these surfaces. And an orientation flat 12 serving as a display unit showing a surface inclined by 4 ° or less and inclined by −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the [1-100] direction.

As a result of diligent research, the inventor has found that a nitride semiconductor substrate capable of improving the oscillation yield when a semiconductor laser is manufactured is a main surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane. Or a main surface inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. And, as a result of earnest research to specify the plane orientation in order to use the nitride semiconductor substrate having this main surface for a semiconductor device, the (−1017) plane and the (10-1-7) plane vicinity are easily cleaved. I found out that Therefore, the inventor of the present invention has a principal surface 11 inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. In the nitride semiconductor substrate 10a having the principal surface 11 inclined below, the (−1017) surface, the (10-1-7) surface, or these surfaces are inclined from −4 ° to 4 ° in the [1-100] direction. In addition, it has been clarified for the first time that the display unit specifies a surface inclined by −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the [1-100] direction. Further, the (-1017) plane, the (10-1-7) plane, or a direction inclined from -4 ° to 4 ° in the [1-100] direction from these planes and orthogonal to the [1-100] direction In addition, a surface inclined by −0.5 ° or more and 0.5 ° or less is a new surface that has not been conventionally obtained. Thereby, when the semiconductor device is manufactured using the nitride semiconductor substrate 10 a having the main surface 11, it is possible to specify a surface that is easily cleaved by the orientation flat 12. For this reason, it is possible to align or discriminate the crystal orientation by using this easily cleaved surface. For example, when a semiconductor laser is manufactured using the nitride semiconductor substrate 10a, the patterning accuracy of the semiconductor laser is aligned based on a reference such as the orientation flat 12. For this reason, since the orientation flat accuracy affects the patterning accuracy, the yield of the semiconductor laser can be improved by improving the orientation flat accuracy. Therefore, by using the nitride semiconductor substrate 10a of the present embodiment, a semiconductor device with improved characteristics can be manufactured. Therefore, the nitride semiconductor substrate 10a of the present invention can be used for a semiconductor device.

(Embodiment 2)
With reference to FIG. 3, the nitride semiconductor substrate 10b in the present embodiment will be described. Nitride semiconductor substrate 10b according to the present embodiment basically has the same configuration as nitride semiconductor substrate 10a according to the first embodiment, but differs in that second orientation flat 13 is further provided.

  The second orientation flat 13 is an IF (identification flat) or a sub-orientation flat for indicating two directions, the front and back. The second orientation flat 13 is substantially orthogonal to the orientation flat 12. The second orientation flat 13 is tilted from −4 ° to 4 ° in the [1-100] direction from the (11-20) plane or −0. The surface is inclined by 5 ° or more and 0.5 ° or less. The second orientation flat 13 is more preferably a (11-20) plane.

  Here, the plane orientation of the second orientation flat 13 will be described with reference to FIG. As shown in FIG. 4, the second orientation flat 13 is in the vicinity of the (11-20) plane. The (11-20) plane is substantially orthogonal to the (20-21) plane or (-202-1) plane, and is also substantially orthogonal to the (-1017) plane or (10-1-7) plane.

  Due to the second orientation flat 13, the (11-20) plane, or a tilt angle of −4 ° or more and 4 ° or less in the [1-100] direction from this plane, and −0. It is also possible to specify a surface inclined by 5 ° or more and 0.5 ° or less. Further, it is possible to easily distinguish the front and back of the nitride semiconductor substrate 10b. Further, since the vicinity of the (11-20) plane has the property of being easily cleaved, the second orientation flat 13 can be easily formed. When the second orientation flat 13 is in the vicinity of the (11-20) plane, the yield of the semiconductor device can be further improved.

  Note that the [1-210] direction and the [-12-10] direction in FIG. 3 indicate plane orientations equivalent to the (11-20) plane.

  The length L12 of the orientation flat 12 is preferably different from the length L13 of the second orientation flat 13, and more preferably different in length to such an extent that the magnitude relationship can be visually confirmed. As an example of the sizes of the orientation flat 12 and the second orientation flat 13, when the diameter of the main surface 11 of the nitride semiconductor substrate 10b is, for example, 50 mm, the length L12 of the orientation flat 12 is, for example, not less than 2 mm and not more than 30 mm. The length L13 of the second orientation flat 13 is shorter than the length L12 and is, for example, not less than 2 mm and not more than 20 mm.

  The magnitude relationship between the length L12 of the orientation flat 12 and the length L13 of the second orientation flat 13 does not matter.

  Here, the lengths L12 and L13 of the orientation flat 12 and the second orientation flat 13 mean the length of a straight line when the nitride semiconductor substrate 10b is viewed from above, as shown in FIG. To do.

  The method for manufacturing a nitride semiconductor substrate in the present embodiment basically has the same configuration as the method for manufacturing a nitride semiconductor substrate in Embodiment 1, but the step of forming the second orientation flat 13 is performed. Furthermore, it differs in the point provided. Specifically, before or after the orientation flat 12 is formed, the (11-20) plane or the [1-100] direction is inclined from −4 ° to 4 ° from this plane, and [1-100]. A second orientation flat 13 having a surface inclined at −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the direction is formed.

  As described above, the nitride semiconductor substrate 10b in the present embodiment is inclined at −4 ° or more and 4 ° or less from the (11-20) plane or the [1-100] direction from this plane, and [1- 100] direction 2nd orientation flat 13 of the surface inclined in the direction orthogonal to the direction -0.5 degree or more and 0.5 degrees or less is further provided.

  (11-20) plane, or from this plane, tilted in the [1-100] direction from −4 ° to 4 ° and from −0.5 ° to 0.5 ° in the direction perpendicular to the [1-100] direction Since the inclined surface has the property of being easily cleaved, the second orientation flat 13 can be easily formed. Thereby, the front and back of the nitride semiconductor substrate 10b can also be discriminated.

(Embodiment 3)
With reference to FIGS. 5 and 6, nitride semiconductor substrate 10c in the present embodiment will be described. Nitride semiconductor substrate 10c in the present embodiment has basically the same configuration as nitride semiconductor substrate 10a in the first embodiment, but differs in that notch 15 is provided as a display unit.

  The notch 15 is a notch provided on the outer periphery of the nitride semiconductor substrate 10c. As shown in FIGS. 5 and 6, the (−1017) plane, the (10-1-7) plane, or the [1-100] direction from these planes is inclined at −4 ° or more and 4 ° or less, and [1 A notch 15 is formed in order to identify a surface inclined at −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the −100] direction. Specifically, as shown in FIG. 6, when the three points A, B, and C are positioned in the notch 15, the direction from the center of B and C to the A is the [−1014] direction or the [10− 1-4] direction.

  As shown in FIG. 6, the depth H of the notch 15 is, for example, not less than 2 mm and not more than 10 mm, and the angle α is not less than 30 ° and not more than 120 °, for example. When the depth H is 10 mm or less and the angle α is 120 ° or less, the area of the main surface 11 of the nitride semiconductor substrate 10c can be suppressed from being narrowed. When the depth H is 2 mm or more and the angle is 30 ° or more, the notch 15 can be easily identified.

  The manufacturing method of nitride semiconductor substrate 10c in the present embodiment basically has the same configuration as the manufacturing method of nitride semiconductor substrate 10a of the first embodiment, but notch 15 is provided instead of orientation flat 12. It differs in the point to form. The formation method of the notch 15 is not particularly limited, but can be formed by cutting, grinding, polishing, or the like.

(Embodiment 4)
With reference to FIG. 7, nitride semiconductor substrate 10d in the present embodiment will be described. Nitride semiconductor substrate 10d in the present embodiment basically has the same configuration as nitride semiconductor substrate 10c in the third embodiment, but differs in that second notch 16 is further provided. The nitride semiconductor substrate 10d in the present embodiment basically has the same configuration as the nitride semiconductor substrate 10b in the second embodiment, but a notch is used instead of the orientation flat 12 and the second orientation flat 13. 15 and the second notch 16 is different.

  The 2nd notch 16 is provided in order to show two, azimuth | direction and front and back. The direction of the second notch 16 is substantially orthogonal to the direction of the notch 15. The second notch 16 is tilted in the (11-20) plane or in the [1-100] direction from −4 ° to 4 ° and −0. It is more preferable that a surface inclined by 5 ° or more and 0.5 ° or less is shown, and a (11-20) surface is shown.

  It is preferable that the notch 15 and the second notch 16 can be distinguished so that the notch 15 is a main notch and the second notch 16 is a secondary notch. In order to distinguish, for example, the notch 15 is made larger than the second notch 16.

  The method for manufacturing nitride semiconductor substrate 10d in the present embodiment basically has the same configuration as the method for manufacturing nitride semiconductor substrate 10c in Embodiment 3, but further forms second notch 16. It differs in the point to do.

(Embodiment 5)
With reference to FIG. 8, nitride semiconductor substrate 10e in the present embodiment will be described. Nitride semiconductor substrate 10e in the present embodiment has basically the same configuration as nitride semiconductor substrate 10a in the first embodiment, but differs in that marks 17 are formed as display portions.

  The mark 17 is, for example, a laser irradiation mark or a scratch caused by a diamond pen. The mark 17 is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, (10-1-7) plane, or these planes, and orthogonal to the [1-100] direction. It is formed so that a surface inclined by −0.5 ° or more and 0.5 ° or less in the direction to be identified can be specified. For example, the [10-1-4] direction, the [−1014] direction, or a direction inclined from −4 ° to 4 ° from these directions to the [1-100] direction, and in the [1-100] direction. A plurality of marks 17 are formed in a direction parallel to a direction inclined by −0.5 ° or more and 0.5 ° or less in an orthogonal direction.

  Further, the mark 17 is -0.5 in the (11-20) plane or a direction inclined from -4 ° to 4 ° in the [1-100] direction from this plane and orthogonal to the [1-100] direction. It is preferably formed so as to be able to specify a surface inclined at an angle of not less than ° and not more than 0.5 °. For example, the size and the number of the marks 17 are formed so as to provide a difference between the [10-1-4] direction or [-1014] direction and the [1-210] direction or [-12-10] direction. . In the present embodiment, a larger number of marks 17 are formed in the [1-210] direction than in the [10-1-4] direction. Thereby, the [10-1-4] direction or [-1014] direction and the [1-210] direction or [-12-10] direction can be specified.

  In this embodiment, the mark 17 is formed as a plurality of dots in one place, but the mark 17 may be formed in two or more areas, may be singular, and has a shape other than dots. It may be.

  The mark 17 is preferably formed on the surface of the nitride semiconductor substrate 10e opposite to the surface used for the semiconductor device. Even when the mark 17 is formed on the back surface and a non-transparent metal film or the like is formed, the nitride semiconductor has a light-transmitting property, so the main surface must be polished. Thus, the mark 17 formed on the back surface can be easily confirmed with a microscope.

The method of manufacturing nitride semiconductor substrate 10e in the present embodiment basically has the same configuration as that of nitride semiconductor substrate 10a of the first embodiment, but forms mark 17 instead of forming orientation flat 12. It differs in the point to do.

  The method of forming the mark 17 is not particularly limited, and for example, a method of forming a laser irradiation trace by laser irradiation or a method of forming a scratch with a diamond pen can be employed. Thereby, the mark 17 can be formed easily. Further, the processing accuracy of the mark 17 can be improved.

  Here, in the first to fifth embodiments, the orientation flat 12, the notch 15 and the mark 17 have been described as examples of the display unit. However, the display unit of the nitride semiconductor substrate of the present invention is not particularly limited thereto. The nitride semiconductor substrate of the present invention may be provided with a combination of orientation flats, notches, marks, and the like.

(Embodiment 6)
With reference to FIG. 9 and FIG. 10, a semiconductor laser (LD, laser diode) 100 which is an example of the semiconductor device in the present embodiment will be described. Semiconductor laser 100 in the present embodiment includes, for example, nitride semiconductor substrate 10a in the first embodiment, n-type buffer layer 102, n-type cladding layer 103, n-type guide layer 104, and undoped guide layer 105. , Active layer 106, undoped guide layer 107, p-type block layer 108, p-type guide layer 109, p-type cladding layer 110, p-type contact layer 111, insulating film 112, p-type electrode 113, The n-type electrode 114 is mainly provided.

  N-type buffer layer 102 is formed on main surface 11 of nitride semiconductor substrate 10a. N-type buffer layer 102 is, for example, n-type GaN having a thickness of 1000 nm. The n-type cladding layer 103 is formed on the n-type buffer layer 102 and is, for example, n-type InAlGaN (indium aluminum gallium nitride) having a thickness of 200 nm. The n-type guide layer 104 is formed on the n-type cladding layer 103 and is, for example, n-type GaN having a thickness of 200 nm. The undoped guide layer 105 is formed on the n-type guide layer 104 and is, for example, undoped InGaN (aluminum gallium nitride) having a thickness of 65 nm. The active layer 106 is formed on the undoped guide layer 105 and has, for example, a three-period MQW (multiple-quantum well) composed of GaN having a thickness of 15 nm and InGaN having a thickness of 3 nm. It is. The active layer 106 may be a single layer. The undoped guide layer 107 is formed on the active layer 106 and is, for example, undoped InGaN having a thickness of 65 nm. The p-type block layer 108 is formed on the undoped guide layer 107 and is p-type AlGaN having a thickness of 20 nm, for example. The p-type guide layer 109 is formed on the p-type block layer 108 and is, for example, p-type GaN having a thickness of 200 nm. The p-type cladding layer 110 is formed on the p-type guide layer 109 and is, for example, p-type InAlGaN having a thickness of 400 nm. The p-type contact layer 111 is formed on the p-type guide layer 109 and is p-type GaN having a thickness of 50 nm, for example.

The insulating film 112 is formed on the p-type contact layer 111 and is, for example, SiO ₂ (silicon dioxide) having a stripe-shaped opening. The opening is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, (10-1-7) plane, or these planes, and orthogonal to the [1-100] direction Along a plane parallel to a plane inclined in the direction of −0.5 ° to 0.5 °. In other words, the opening is inclined from −4 ° to 4 ° in the [−1014] direction, the [10-1-4] direction, or the [1-100] direction from these directions, and [1-100]. It is formed along a direction inclined by −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the direction.

The p-type electrode 113 is formed on the p-type contact layer 111 and the insulating film 112, and is made of, for example, Ni (nickel) / Au (gold). N-type electrode 114 is formed on the back surface of nitride semiconductor substrate 10a, and is made of, for example, Ti (titanium) / Al (aluminum) / Ti / Au.

  The semiconductor laser 100 according to the present embodiment is formed so that a surface substantially parallel to the orientation flat 12 becomes an end surface. That is, as shown in FIG. 10, the end surface 100 a of the semiconductor laser 100 has substantially the same plane orientation as the orientation flat 12. The end faces 100a and 100b of the semiconductor laser 100 are used as end faces for the laser resonator. As shown in FIG. 11, the end faces 100a and 100b are inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, the (10-1-7) plane, or these planes. In addition, the surface is inclined by −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the [1-100] direction. In other words, the end surfaces 100a and 100b are surfaces inclined by 71 ° or more and 79 ° or less in the [1-100] direction from the (0001) surface, or 71 ° or more 79 in the [-1100] direction from the (000-1) surface. It is substantially orthogonal to a surface inclined at a degree below (the main surface of the semiconductor laser 100, that is, the main surface 11 of the nitride semiconductor substrate 10). The end faces 100a and 100b are different from conventional cleaved faces such as the conventional c-plane, m-plane or a-plane.

  And since the opening part of the insulating film 112 is formed in the said direction, the direction of the waveguide 100c (refer FIG. 10) of the semiconductor laser 100 in this Embodiment is [10-1-4] direction, [- 1014] direction, or tilted in the direction [1-100] from −4 ° to 4 ° from these directions, and in the direction perpendicular to the [1-100] direction from −0.5 ° to 0.5 ° is there. That is, the waveguide 100c is inclined at −4 ° or more and 4 ° or less in the [1-100] direction from the end faces 100a, 100b ((−1017) plane, (10-1-7) plane, or these planes, and It is formed in a direction substantially perpendicular to a plane inclined at −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the [1-100] direction.

  The emission wavelength of the semiconductor laser 100 as the light emitting element can be set to 430 nm or more and 550 nm or less. The emission wavelength can be adjusted by the In composition of the active layer 106. In the nitride semiconductor substrate 10a of the present embodiment, the In incorporation efficiency at the time of epitaxial growth can be improved, and good light emission characteristics can be obtained at 500 nm to 550 nm in the green region.

  Next, a method for manufacturing the semiconductor laser 100 in the present embodiment will be described. First, nitride semiconductor substrate 10a in the first embodiment is prepared.

  Next, the n-type buffer layer 102, the n-type cladding layer 103, the n-type guide layer 104, the undoped guide layer 105, the active layer 106, the undoped guide layer 107, and the p-type block are formed on the main surface 11 of the nitride semiconductor substrate 10a. The layer 108, the p-type guide layer 109, the p-type cladding layer 110, and the p-type contact layer 111 are formed in this order. The method for forming these layers is not particularly limited, but can be formed by, for example, a vapor phase growth method, a liquid phase growth method, or the like.

  Next, an insulating film 112 is formed on the p-type contact layer 111 by photolithography. Next, the p-type electrode 113 and the n-type electrode 114 are formed by vapor deposition, for example.

  By performing the above steps, the semiconductor laser 100 shown in FIG. 9 can be manufactured.

As described above, the semiconductor laser 100 according to the present embodiment has a (−1017) plane, a (10-1-7) plane, or a -4 ° or more and 4 ° or less in the [1-100] direction from these planes. The nitride semiconductor substrate 10a provided with the orientation flat 12 that is inclined and is a surface inclined in a direction orthogonal to the [1-100] direction by not less than −0.5 ° and not more than 0.5 ° is used.

  The orientation flat 12 is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, (10-1-7) plane, or these planes, and orthogonal to the [1-100] direction. Since a plane inclined at −0.5 ° or more and 0.5 ° or less in the direction to be moved can be specified, the [10-1-4] direction, the [−1014] direction, or -4 to the [1-100] direction from these directions. A semiconductor laser 100 having a waveguide 100c formed along a direction inclined at an angle of not less than 4 ° and not more than 4 ° and at an angle of not less than −0.5 ° and not more than 0.5 ° in a direction orthogonal to the [1-100] direction is realized. it can. As shown in FIG. 10, when the light generated on the end surface 100a travels to the other end surface 100b and is reflected, the waveguide 100c is in the [10-1-4] direction or [-1014] direction in the present embodiment. From [1-100] direction to −4 ° or more and 4 ° or less, and in a direction perpendicular to the [1-100] direction and −0.5 ° or more and 0.5 ° or less, The number of light reciprocations (the number of reciprocations in the resonator within the waveguide 100c) is one or more, and amplification is likely to occur. For this reason, the performance as the semiconductor laser 100 can be maintained. When the waveguide 100c is formed in a direction exceeding 0.5 [deg.] From the [10-1-4] direction or the [-1014] direction, as shown by the dotted line in FIG. Less than. Therefore, the (−1017) plane, the (10-1-7) plane, or a direction inclined from −4 ° to 4 ° in the [1-100] direction from these planes and orthogonal to the [1-100] direction In particular, by specifying a plane inclined at −0.5 ° or more and 0.5 ° or less, the laser oscillation yield of the semiconductor laser 100 can be improved.

  In addition, the inventor of the present invention has a principal surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. In the semiconductor laser 100 having the inclined main surface, the waveguide 100c is inclined in the [10-1-4] direction, the [-1014] direction, or the [1-100] direction from these directions by -4 ° or more and 4 ° or less. In addition, the present inventors have found that the laser oscillation yield of the semiconductor laser 100 can be improved by forming along a direction inclined by −0.5 ° or more and 0.5 ° or less in a direction orthogonal to the [1-100] direction. For this reason, according to the semiconductor laser 100 in the present embodiment, the characteristics can be improved.

  Here, in the present embodiment, the semiconductor laser 100 including the nitride semiconductor substrate 10a in the first embodiment has been described as an example, but the nitride semiconductor substrate is particularly similar to the nitride semiconductor substrate 10a in the first embodiment. Without being limited, nitride semiconductor substrates 10b to 10d of the embodiments 2 to 4 may be used, or another nitride semiconductor substrate may be used.

  In the present embodiment, a semiconductor laser has been described as an example of a semiconductor device. However, the semiconductor device of the present invention is not particularly limited to a semiconductor laser. For example, an LED (Light Emitting Diode), a MOSFET (Metal) Oxide Semiconductor Field Effect Transistor (JFET), JFET (Junction Field-Effect Transistor), pn diode, Schottky Barrier Diode (SBD), IGBT (Insulated Gate Bipolar Transistor) It can also be applied to a transistor).

  In this embodiment, the (−1017) plane, the (10-1-7) plane, or these planes are inclined from −4 ° to 4 ° in the [1-100] direction and in the [1-100] direction. It was examined that a surface inclined at −0.5 ° or more and 0.5 ° or less in a direction orthogonal to each other has a cleavage property.

First, from a (0001) GaN ingot (the main surface of which is a (0001) plane GaN crystal ingot) grown thick by the HVPE method, cut out at an angle of 75 degrees in the [1-100] direction with a diameter of 2 inches and a thickness of 370 μm A (20-21) plane GaN substrate was prepared. The main surface of the GaN substrate was mirror-finished and the back surface was polished and finished in a satin state. The surface roughness of the main surface of the GaN substrate was 1.5 nm on the basis of Ra, and the surface roughness of the back surface was 3 μm on the basis of Ra.

  On the back side of the matte state, using a diamond pen, a marking line was made perpendicular to the direction in which the [0001] direction was projected onto the main surface of the GaN substrate, and then pressed to press the GaN substrate to the (−1017) plane, ( 10-1-7) cleaved into plane. In order to observe the perpendicularity of the obtained split section (end face), the GaN substrate was observed from the a-plane direction using a scanning electron microscope.

  FIG. 12 is a scanning electron microscope image obtained by observing the fractured surface from the a-plane direction, and the right end surface is the fractured surface. As shown in FIG. 12, the (-1017) plane or the (10-1-7) plane, which is a fractured section, has a cleavage property, and has flatness and perpendicularity to the (20-21) plane. I found it.

  In this example, the flatness and the perpendicularity to the (−1017) plane or the (10-1-7) plane with respect to the (20-21) plane were examined, but the (−1017) plane with respect to the (−202-1) plane. Alternatively, the flatness and perpendicularity to the (10-1-7) plane can be considered in the same manner, although there are differences between the Ga-rich plane and the N-rich plane. Therefore, it is found that the (−1017) plane or the (10-1-7) plane, which is a split section, has a cleavage property and has flatness and perpendicularity to the (−202-1) plane. It was.

  The same results as above were obtained for crystals grown by the flux method. In addition, when a plurality of GaN substrates were used as the base substrate and a single GaN crystal joined from the base substrate was grown by the HVPE method, the same result as above was obtained. Similar results were obtained for a 4 inch diameter GaN substrate.

  In this example, the main surface of the nitride semiconductor substrate is inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or 71 in the [−1100] direction from the (000-1) plane. The effect of being a surface inclined at an angle of not less than 79 ° and not more than 79 ° was examined.

Specifically, in Example 1, in a GaN substrate having a semipolar (20-21) plane as a main surface, a [0001] direction is pressed perpendicularly to the direction projected on the main surface of the GaN substrate and pressed. It was found that the (−1017) plane and the (10-1-7) plane, which are the fractured surfaces obtained in this way, have flatness and perpendicularity to the main surface of the GaN substrate. In order to investigate the usefulness of this main surface as a laser resonator, the semiconductor laser shown in FIG. 9 was grown by metal organic vapor phase epitaxy as follows. Trimethylgallium (TMGa), trimethylaluminum (TMAl), trimethylindium (TMIn), ammonia (NH ₃ ), and silane (SiH ₄ ) were used as raw materials.

  The GaN substrate was cut out from a (0001) GaN ingot grown thick by the HVPE method using a wafer slicing device at an angle θ (see FIG. 2) in a range of 68 to 82 degrees in the [1-100] direction, and [0001] A GaN substrate having a desired off angle in which the inclination angle θ from the direction to the [1-100] direction is in the range of 68 degrees to 82 degrees was produced. For example, when cut at an angle θ of 75 °, a GaN substrate having a (20-21) plane as a main surface is obtained, and is indicated by the main surface 11 in the hexagonal crystal lattice shown in FIG. The cut out substrate was subjected to outer periphery processing and formed into a circle having a diameter of 50 mm and a thickness of 370 μm.

In addition, an orientation flat having a (−1017) plane was formed by cutting the GaN substrate. The length of the orientation flat was 16 mm. The (−1017) plane is indicated by orientation flat 12 in the hexagonal crystal structure shown in FIG. The main surface of the GaN substrate on which the orientation flat was formed was a mirror-finished surface, and the back surface was in a matte state that was ground. On both sides, the processing damage layer of polishing was removed by wet etching and / or dry etching.

  After this GaN substrate was placed on a susceptor in the reactor as a nitride semiconductor substrate, an epitaxial layer was grown by the following growth procedure. First, as the n-type buffer layer 102, n-type GaN having a thickness of 1000 nm was grown. Next, an n-type InAlGaN cladding layer having a thickness of 1200 nm was grown as the n-type cladding layer 103. Subsequently, an n-type GaN guide layer having a thickness of 200 nm was grown as the n-type guide layer 104, and an undoped InGaN guide layer having a thickness of 65 nm was grown as the undoped guide layer 105. Thereafter, as the active layer 106, a three-period MQW made of GaN with a thickness of 15 nm / InGaN with a thickness of 3 nm was grown. Subsequently, as an undoped guide layer 107, an undoped InGaN guide layer having a thickness of 65 nm, as a p-type block layer 108, a p-type AlGaN block layer having a thickness of 20 nm, and as a p-type guide layer 109, p-type GaN having a thickness of 200 nm. Grown guide layer. Next, a p-type InAlGaN cladding layer having a thickness of 400 nm was grown as the p-type cladding layer 110. Finally, a p-type GaN contact layer having a thickness of 50 nm was grown as the p-type contact layer 111.

After forming the insulating film 112 of SiO _{2 on} the p-type contact layer 111, a stripe window having a width of 10 μm was formed by wet etching using photolithography. Here, since the [−1014] direction can be specified in the epitaxial layer by the orientation flat 12, the direction of the laser stripe is set to a direction inclined from −0.5 ° to 0.5 ° from the [−1014] direction.

  After forming the stripe window, a p-type electrode 113 made of Ni / Au and a pad electrode made of Ti / Al were deposited. Next, the back surface of the GaN substrate was polished with diamond slurry to a thickness of 100 μm or less that facilitates cleavage, thereby producing a substrate product with the back surface in a mirror state. An n-type electrode 114 made of Ti / Al / Ti / Au was formed on the back surface (polished surface) of the GaN substrate by vapor deposition.

  A laser scriber using a YAG laser having a wavelength of 355 nm was used for manufacturing the resonator mirror for the laser stripe. When a break is made using a laser scriber, it is possible to improve the oscillation chip yield compared to the case where diamond scribe is used. As conditions for forming the scribe grooves, the laser beam output was 100 mW and the scanning speed was 5 mm / s. The formed scribe groove was, for example, a groove having a length of 30 μm, a width of 10 μm, and a depth of 40 μm. A scribe groove was formed by directly irradiating the surface of the epitaxial layer with a laser beam through the insulating film opening of the GaN substrate at a pitch of 800 μm. The resonator length was 600 μm.

  Using a blade, a resonant mirror was prepared by cleaving. A laser bar was fabricated by breaking on the back side of the GaN substrate by pressing. More specifically, as shown in FIG. 11, end faces 100a and 100b for the laser resonator together with the main surface 11 are the (−1017) plane and the (10-1-7) plane, and the conventional c plane. , Different from conventional cleavage planes such as m-plane or a-plane.

  As a result of observing the fractured surface formed by the break with a scanning electron microscope, no remarkable unevenness was observed. From this, the flatness (size of irregularities) of the fractured surface is estimated to be 20 nm or less. Furthermore, the perpendicularity of the fractured surface to the sample surface was within a range of ± 5 °.

A dielectric multilayer film was coated on the end face of the laser bar by vacuum deposition. The dielectric multilayer film was formed by alternately laminating SiO ₂ and TiO ₂ (titanium dioxide). Each film thickness is
Adjustment was made in the range of 50 nm or more and 100 nm or less, and the center wavelength of the reflectance was designed in the range of 500 nm or more and 530 nm or less. The reflective surface on one side was set to 10 periods, the design value of reflectivity was designed to about 95%, the reflective surface on the other side was set to 6 periods, and the design value of reflectivity was about 80%.

As a result of examining the relationship between the tilt angle θ in the [0001] direction of the GaN substrate in the [1-100] direction and the oscillation yield of the semiconductor laser fabricated in this way, FIG. 13 and Table 1 were obtained. In this example, the oscillation yield was defined as (number of oscillation chips) / (number of measurement chips). FIG. 13 is a plot of a semiconductor laser in which the stacking fault density of the GaN substrate is 1 × 10 ⁴ (cm ⁻¹ ) or less and the laser stripe is in the [−1014] direction.

  From FIG. 13 and Table 1, it was found that the oscillation yield was extremely low when the angle θ (off angle) was 68 ° or less and 82 ° or more. As a result of observing the end face state with an optical microscope, it is found that at an angle of 68 ° or less and 82 ° or more, a (1-100) plane or an equivalent plane appears in most chips, and verticality cannot be obtained. It was. Further, it was found that when the off angle is in the range of 71 ° to 79 °, the verticality is improved and the oscillation yield is increased to 50% or more. In particular, when the off angle is in the range of 73 ° to 77 °, the oscillation yield increases to 75% or more. When the off angle is in the range of 74 ° to 76 °, the oscillation yield is 82% or more and the off angle is 75. At °, the oscillation yield increased to over 85%.

  From these facts, the range of the off angle in the [1-100] direction from the (0001) plane of the main surface of the GaN substrate is 71 ° to 79 °, preferably 73 ° to 77 °, more preferably 75. It was confirmed that the oscillation yield could be improved at around 0 °.

  In this example, the inclination angle from the (0001) plane of the main surface to the [1-100] direction was examined. However, the inclination angle from the (000-1) plane to the [-1100] direction was also Ga rich. Although there is a difference between the plane and the N-rich plane, the same can be considered. Therefore, the range of the off angle from the (000-1) plane of the main surface of the GaN substrate to the [-1100] direction is 71 ° to 79 °, preferably 73 ° to 77 °, more preferably around 75 °. It was found that the oscillation yield can be improved.

  Further, in this example, when the orientation flat surface is the (−1017) plane, the plane orientation of the main surface of the GaN substrate is inclined from the (20-21) plane to the [1-100] direction by −4 ° or more and 4 ° or more. In this case, it was confirmed that the oscillation yield can be improved. From this, when the main surface of the GaN substrate is the (20-21) plane or the (−202-1) plane, the orientation flat surface is −4 ° or more and 4 ° in the [1-100] direction from the (−1017) plane. It is estimated that the same oscillating yield is obtained even when tilted thereafter. For this reason, when the display unit displays the (−1017) plane, the (10-1-7) plane, or a plane tilted from −4 ° to 4 ° in the [1-100] direction from these planes, The oscillation yield can be improved.

  In this embodiment, the (−1017) plane, the (10-1-7) plane, or a plane inclined from −0.5 ° to 0.5 ° in a direction perpendicular to the [1-100] direction from these planes. The effect of providing a display unit indicating the above was investigated.

Specifically, in Example 1, in a GaN substrate having a semipolar (20-21) plane as a main surface, a [0001] direction is pressed perpendicularly to the direction projected on the main surface of the GaN substrate and pressed. It was found that the (−1017) plane and the (10-1-7) plane, which are the fractured surfaces obtained in this way, have flatness and perpendicularity to the main surface of the GaN substrate. Therefore, in order to investigate the usefulness of the laser having a split section as a resonator, a plurality of GaN substrates having a (20-21) principal surface were prepared in the same manner as in Example 2. For this GaN substrate, an orientation flat having a predetermined inclination angle was formed in the (−1017) plane or the [1-210] direction from this plane.

  Then, similarly to Example 2, a semiconductor laser was formed, and the yield of the semiconductor laser was measured. The results are shown in FIG. In FIG. 14 and Table 2, the horizontal axis indicates the deviation angle from the (−1017) plane as the surface accuracy.

  As shown in FIG. 14 and Table 2, when the orientation flat is shifted from the (−1017) plane by −0.75 or less or by 0.75 ° or more, the oscillation yield is very low. On the other hand, when the orientation flat is inclined from −0.5 ° to 0.5 ° in the direction orthogonal to the [1-100] direction from the (−1017) plane, the oscillation yield increased to 50% or more. In particular, in the case of tilting from −0.25 ° to 0.25 ° in the direction orthogonal to the [1-100] direction from the (−1017) plane, the oscillation yield is greatly increased to 75% or more, In the case of the (−1017) plane, the oscillation yield increased most by 85%.

  From these facts, the (−1017) plane, the (10-1-7) plane, or a plane inclined from −0.5 ° to 0.5 ° in a direction perpendicular to the [1-100] direction from these planes It was confirmed that the oscillation yield can be improved by providing the display unit indicating the above.

  In addition, since the light confinement effect is different between the direction orthogonal to the [1-100] direction of the present embodiment and the [1-100] direction of the second embodiment, the allowable ranges of the respective inclination angles may be different. all right.

  Although the embodiments and examples of the present invention have been described above, it is also planned from the beginning to appropriately combine the features of the embodiments and examples. The embodiments and examples disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above-described embodiment but by the scope of claims, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

  10a, 10b, 10c, 10d, 10e Nitride semiconductor substrate, 11 main surface, 12 orientation flat (orientation flat), 13 second orientation flat (orientation flat), 15 notch, 16 second notch, 17 mark, 100 semiconductor laser , 100a, 100b end face, 100c waveguide, 102 n-type buffer layer, 103 n-type cladding layer, 104 n-type guide layer, 105, 107 undoped guide layer, 106 active layer, 108 p-type block layer, 109 p-type guide layer 110 p-type cladding layer, 111 p-type contact layer, 112 insulating film, 113 p-type electrode, 114 n-type electrode.

The nitride semiconductor substrate according to the present invention includes a main surface and an orientation flat. The main surface is a surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or a surface inclined from 71 ° to 79 ° in the [-1100] direction from the (000-1) plane. is there. The orientation flat is substantially orthogonal to the main surface. The size of the nitride semiconductor substrate is 10 mm or more if the planar shape of the nitride semiconductor substrate is circular, and 10 mm or more if the planar shape is rectangular. The thickness of the nitride semiconductor substrate is not less than 100 μm and not more than 1000 μm.
The nitride semiconductor substrate according to the present invention includes a main surface and a notch. The main surface is a surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or a surface inclined from 71 ° to 79 ° in the [-1100] direction from the (000-1) plane. is there. The size of the nitride semiconductor substrate is 10 mm or more if the planar shape of the nitride semiconductor substrate is circular, and 10 mm or more if the planar shape is rectangular. The thickness of the nitride semiconductor substrate is not less than 100 μm and not more than 1000 μm.
The nitride semiconductor substrate according to the present invention includes a main surface and a mark. The main surface is a surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or a surface inclined from 71 ° to 79 ° in the [-1100] direction from the (000-1) plane. is there. The size of the nitride semiconductor substrate is 10 mm or more if the planar shape of the nitride semiconductor substrate is circular, and 10 mm or more if the planar shape is rectangular. The thickness of the nitride semiconductor substrate is not less than 100 μm and not more than 1000 μm.
As a result of diligent research, the inventor has found that a nitride semiconductor substrate capable of improving the oscillation yield when a semiconductor laser is manufactured is a main surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane. Or a surface inclined from 71 ° to 79 ° in the [−1100] direction from the (000-1) plane. And as a result of earnestly researching to specify the plane orientation in order to use the nitride semiconductor substrate having this main surface for a semiconductor device, the (−1017) plane or the (10-1-7) plane vicinity is easily cleaved. I found out that

Claims (4)

Main surface,
A display unit,
The main surface is a surface inclined from 71 ° to 79 ° in the [1-100] direction from the (0001) plane, or a surface inclined from 71 ° to 79 ° in the [-1100] direction from the (000-1) plane. And
The display section is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, the (10-1-7) plane, or these planes, and in the [1-100] direction. A nitride semiconductor substrate showing a surface inclined in a direction perpendicular to -0.5 ° to 0.5 °. The display unit is an orientation flat;
The orientation flat is inclined from −4 ° to 4 ° in the [1-100] direction from the (−1017) plane, the (10-1-7) plane, or these planes, and in the [1-100] direction. The nitride semiconductor substrate according to claim 1, wherein the nitride semiconductor substrate is a plane inclined at −0.5 ° or more and 0.5 ° or less in a direction perpendicular to the cross-section.   (11-20) plane, or from this plane, tilted in the [1-100] direction from −4 ° to 4 ° and from −0.5 ° to 0.5 ° in the direction perpendicular to the [1-100] direction The nitride semiconductor substrate according to claim 2, further comprising a second orientation flat having an inclined surface. The main surface is a (20-21) plane or a (−202-1) plane,
The nitride semiconductor substrate according to claim 1, wherein the display unit indicates a (−1017) plane or a (10-1-7) plane.