JP2012127881A - Infrared sensor and infrared sensor array - Google Patents
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- 238000001514 detection method Methods 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000010521 absorption reaction Methods 0.000 claims abstract description 25
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 48
- 238000005530 etching Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
本発明は、赤外線センサおよび赤外線センサアレイに関し、特に、赤外線吸収部を備えた非冷却赤外線センサおよび赤外線センサアレイに関する。 The present invention relates to an infrared sensor and an infrared sensor array, and more particularly to an uncooled infrared sensor and an infrared sensor array having an infrared absorbing portion.
非冷却赤外線センサは、熱型赤外線センサとも呼ばれるように、センサに入射した赤外線を熱に変換し、温度変化による物性値の変化を電気信号として読み出している。このセンサの単位画素では、赤外線の検出感度を高めるために、ダイオード等の検知素子が形成された温度検知部を凹部の上に支持脚で保持して基板から隔離する断熱構造を採用している。また、温度検知部の上には傘状の赤外線吸収部を形成して、入射する赤外線を大面積で吸収し、これを温度検知部に伝えることにより、赤外線の検出感度を高めている。 The uncooled infrared sensor converts the infrared rays incident on the sensor into heat and reads the change in the physical property value due to the temperature change as an electrical signal, as is called a thermal infrared sensor. In the unit pixel of this sensor, in order to increase the detection sensitivity of infrared rays, a heat insulating structure is employed in which a temperature detection unit in which a detection element such as a diode is formed is held on a recess by a support leg and is isolated from the substrate. . In addition, an umbrella-shaped infrared absorption unit is formed on the temperature detection unit to absorb incident infrared rays in a large area and transmit this to the temperature detection unit, thereby increasing the infrared detection sensitivity.
赤外線吸収部は、例えば、ＳｉＯ２からなる絶縁膜の間に窒化チタンからなる赤外線吸収金属膜が挟まれた積層構造からなる。赤外線の吸収効率を向上させるために、赤外線吸収金属膜は全面に形成される（例えば、特許文献１参照）。 For example, the infrared absorption part has a laminated structure in which an infrared absorption metal film made of titanium nitride is sandwiched between insulating films made of SiO 2 . In order to improve the infrared absorption efficiency, the infrared absorbing metal film is formed on the entire surface (see, for example, Patent Document 1).
赤外線吸収部は傘部と傘部から張り出した接合部からなり、この接合部により温度検知部上に載置されているが、この接合部も赤外線吸収金属膜が絶縁膜で挟まれた積層構造からなる。このため、温度検知部の検知素子に通電して電気的特性を検出する場合に、絶縁膜を介して配置された赤外線吸収金属膜中に電荷が発生し、赤外線吸収金属膜全体が帯電する。この結果、赤外線吸収金属膜と基板との間に静電力が発生し、画素（支持脚で支持された温度検知部と赤外線吸収部）が傾いて検出感度にムラが生じたり、赤外線吸収部と赤外線反射部とが接触し断熱不良による欠陥画素となるという問題があった。 The infrared absorption part is composed of an umbrella part and a joint part protruding from the umbrella part, and is placed on the temperature detection part by this joint part, but this joint part is also a laminated structure in which an infrared absorbing metal film is sandwiched between insulating films Consists of. For this reason, when the electrical characteristics are detected by energizing the sensing element of the temperature sensing unit, an electric charge is generated in the infrared absorbing metal film disposed via the insulating film, and the entire infrared absorbing metal film is charged. As a result, an electrostatic force is generated between the infrared-absorbing metal film and the substrate, and the pixels (the temperature detection unit and the infrared absorption unit supported by the support legs) are inclined to cause uneven detection sensitivity. There has been a problem that the infrared reflection part comes into contact and becomes a defective pixel due to poor heat insulation.
そこで、本発明は、赤外線吸収膜の帯電を防止した、赤外線検出感度の高い赤外線センサおよび赤外線センサアレイの提供を目的とする。 Accordingly, an object of the present invention is to provide an infrared sensor and an infrared sensor array with high infrared detection sensitivity that prevent the infrared absorption film from being charged.
本発明は、赤外線を検出する赤外線センサであって、凹部を有する基板と、基板に接続された支持脚で凹部の上に支持され、検知素子を含む温度検知部と、温度検知部の上に載置され、赤外線吸収金属膜を含む赤外線吸収部であって、基板の表面に平行な傘部と傘部を温度検知部に接合する接合部とを含む赤外線吸収部とを含み、傘部の赤外線吸収金属膜と、接合部の赤外線吸収金属膜とが、電気的に絶縁されていることを特徴とする赤外線センサである。 The present invention is an infrared sensor for detecting infrared rays, and includes a substrate having a recess, a temperature detection unit including a detection element supported on the recess by a support leg connected to the substrate, and a temperature detection unit. An infrared absorbing portion that is placed and includes an infrared absorbing metal film, the infrared absorbing portion including an umbrella portion parallel to the surface of the substrate and a joint portion that joins the umbrella portion to the temperature detecting portion, The infrared sensor is characterized in that the infrared absorbing metal film and the infrared absorbing metal film at the joint are electrically insulated.
また、本発明は、上述の赤外線センサをマトリックス状に配置したことを特徴とする赤外線センサアレイでもある。 The present invention also provides an infrared sensor array in which the above-described infrared sensors are arranged in a matrix.
本発明にかかる赤外線センサおよび赤外線センサアレイでは、赤外線吸収部の帯電による赤外線吸収部や温度検知部の傾きを防止し、高精度な赤外線検出が可能となる。 In the infrared sensor and the infrared sensor array according to the present invention, it is possible to prevent the inclination of the infrared absorption part and the temperature detection part due to charging of the infrared absorption part, and to perform highly accurate infrared detection.
実施の形態１．
図１は、全体が１００で表される、本発明の実施の形態１にかかる赤外線センサの１画素分の平面図である。また、図２は、図１のＩ−Ｉにおける断面図である。
Embodiment 1 FIG.
FIG. 1 is a plan view of one pixel of the infrared sensor according to the first embodiment of the present invention, the whole being represented by 100. FIG. 2 is a cross-sectional view taken along the line II of FIG.
図２に示すように、赤外線センサ１００は、Ｓｉ基板１を含む。Ｓｉ基板１には凹部２とエッチングストップ層５が設けられている。エッチングストップ層５は、凹部２を形成する場合に、隣接画素まで凹部２が拡がるのを防止するために設けられている。 As shown in FIG. 2, the infrared sensor 100 includes a Si substrate 1. The Si substrate 1 is provided with a recess 2 and an etching stop layer 5. The etching stop layer 5 is provided in order to prevent the recess 2 from spreading to the adjacent pixels when the recess 2 is formed.
凹部２の上には、温度検知部３が支持脚４により支持されている。温度検知部３にはダイオード等の検知素子６が形成され、検知素子６の温度特性の変化を利用して赤外線を検出している。ダイオードに代えて、酸化バナジウム（ＶＯｘ）等からなるボロメータや、チタン酸ジルコン酸鉛（ＰＺＴ）等からなる焦電素子を用いても良い。 On the recess 2, the temperature detection unit 3 is supported by a support leg 4. A detection element 6 such as a diode is formed in the temperature detection unit 3, and infrared rays are detected using changes in temperature characteristics of the detection element 6. Instead of the diode, a bolometer made of vanadium oxide (VOx) or the like, or a pyroelectric element made of lead zirconate titanate (PZT) or the like may be used.
支持脚４は、ＳｉＯ２、ＳｉＮ等からなる絶縁膜８と、チタン、コバルト、アルミニウム等の金属薄膜からなる配線層９とを含む。配線層９は、検知素子６とＳｉ基板１上の配線１０とに電気的に接続されている。配線１０は、更に、駆動回路や読み出し回路（図示せず）に接続されている。 The support leg 4 includes an insulating film 8 made of SiO 2 , SiN or the like and a wiring layer 9 made of a metal thin film such as titanium, cobalt, or aluminum. The wiring layer 9 is electrically connected to the detection element 6 and the wiring 10 on the Si substrate 1. The wiring 10 is further connected to a drive circuit and a readout circuit (not shown).
温度検知部３の上には、赤外線の吸収率を高めるために、傘状の赤外線吸収部７が設けられている。赤外線吸収部７は、例えば窒化チタンからなる赤外線吸収金属膜１２と、これを挟むように形成された、例えばＳｉＯ２、ＳｉＮ等からなる絶縁膜１１ａ、１１ｂとの積層構造からなる。赤外線吸収金属膜１２は、例えばシート抵抗値が２００Ω／□〜５００Ω／□、理論的には３７７Ω／□であり、金属膜、金属酸化膜または金属窒化膜からなり、赤外線吸収部７の全体に形成されている。 An umbrella-shaped infrared absorber 7 is provided on the temperature detector 3 in order to increase the infrared absorption rate. The infrared absorbing portion 7 has a laminated structure of an infrared absorbing metal film 12 made of, for example, titanium nitride and insulating films 11a and 11b made of, for example, SiO 2 or SiN so as to sandwich the metal film. The infrared absorbing metal film 12 has a sheet resistance value of, for example, 200Ω / □ to 500Ω / □, theoretically 377Ω / □, and is made of a metal film, a metal oxide film, or a metal nitride film. Is formed.
赤外線吸収部７は、Ｓｉ基板１の表面に平行な傘部１７と、Ｓｉ基板１の方向に張り出した接合部１４とを有し、この接合部１４で温度検知部３の上に接続されている。この接合部１４も赤外線吸収金属膜１２が絶縁膜１１ａ、１１ｂに挟まれた積層構造からなる。 The infrared absorption unit 7 includes an umbrella portion 17 parallel to the surface of the Si substrate 1 and a joint portion 14 projecting in the direction of the Si substrate 1, and is connected to the temperature detection unit 3 by the joint portion 14. Yes. The joint 14 also has a laminated structure in which the infrared absorbing metal film 12 is sandwiched between the insulating films 11a and 11b.
赤外線吸収部７に設けられた赤外線吸収金属膜１２には、スリット１６が設けられ、接合部１４の赤外線吸収金属膜１２と、傘部１７の赤外線吸収金属膜１２との間を電気的に絶縁している。 The infrared absorbing metal film 12 provided in the infrared absorbing portion 7 is provided with a slit 16 to electrically insulate between the infrared absorbing metal film 12 of the joint portion 14 and the infrared absorbing metal film 12 of the umbrella portion 17. is doing.
また、赤外線吸収部７の傘部１７にはエッチングホール１５が設けられている。かかるエッチングホール１５は、凹部２をエッチングするためのエッチングガスが通るものであるが、無い場合もある。 An etching hole 15 is provided in the umbrella portion 17 of the infrared absorbing portion 7. Such an etching hole 15 allows an etching gas for etching the recess 2 to pass therethrough, but may not exist.
Ｓｉ基板１と赤外線吸収部７との間には、例えばアルミニウム等の金属からなる赤外線反射部１３が設けられている。赤外線反射部１３は、赤外線吸収部７を透過した赤外線を反射させて、再度赤外線吸収部７に入射させて赤外線の検出効率を向上させるものであるが、形成しない場合もある。 Between the Si substrate 1 and the infrared absorbing portion 7, an infrared reflecting portion 13 made of a metal such as aluminum is provided. The infrared reflecting portion 13 reflects the infrared light transmitted through the infrared absorbing portion 7 and makes it incident on the infrared absorbing portion 7 again to improve the infrared detection efficiency. However, the infrared reflecting portion 13 may not be formed.
次に、赤外線センサ１００の動作原理について説明する。赤外線センサ１００に入射した赤外線は赤外線吸収部７に吸収される。赤外線吸収部７を透過した赤外線も赤外線反射部１３で反射され、裏面から赤外線吸収部７に入射し吸収される。 Next, the operation principle of the infrared sensor 100 will be described. Infrared rays that have entered the infrared sensor 100 are absorbed by the infrared absorber 7. Infrared light that has passed through the infrared absorbing portion 7 is also reflected by the infrared reflecting portion 13 and is incident on the infrared absorbing portion 7 from the back surface and absorbed.
赤外線吸収部７は結合部１４により温度検知部３に接合されており、赤外線吸収部７に入射した赤外線により発生した熱を温度検知部３に伝える。この熱により温度検知部３の温度が変化し、検知素子６の電気特性が変化する。 The infrared absorption unit 7 is joined to the temperature detection unit 3 by a coupling unit 14, and transfers heat generated by infrared rays incident on the infrared absorption unit 7 to the temperature detection unit 3. Due to this heat, the temperature of the temperature detection unit 3 changes, and the electrical characteristics of the detection element 6 change.
検知素子６の電気特性の変化を示す電気信号は、支持脚４の配線層９、Ｓｉ基板１上の配線１０を通って読み出し回路等（図示せず）に伝達され検出される。これにより、赤外線吸収部７に入射した赤外線の量が、電気信号として検出される。 An electrical signal indicating a change in electrical characteristics of the detection element 6 is transmitted to and detected by a readout circuit or the like (not shown) through the wiring layer 9 of the support leg 4 and the wiring 10 on the Si substrate 1. Thereby, the amount of infrared rays incident on the infrared absorbing portion 7 is detected as an electrical signal.
通常、赤外線センサ１００は、マトリックス状に配置されて赤外線センサアレイを形成する。かかる赤外線センサアレイを用いることにより、赤外線を発する物体の画像を得ることができる。 In general, the infrared sensors 100 are arranged in a matrix to form an infrared sensor array. By using such an infrared sensor array, an image of an object emitting infrared rays can be obtained.
本実施の形態１にかかる赤外線センサ１００および赤外線センサアレイでは、赤外線吸収金属膜１２にスリット１６が設けられ、接合部１４と傘部１７の赤外線吸収金属膜１２を電気的に絶縁する構造となっている。このため、温度検知部３の電気的特性を検出する際に接合部１４の赤外線吸収金属膜１２中に電荷が発生しても、傘部１７の赤外線吸収金属膜１２が帯電することはない。従って、従来構造のように、赤外線吸収金属膜１２とＳｉ基板１との間に静電力が発生し、画素（温度検知部と赤外線吸収部）が傾くことがなく、検出感度のムラや欠陥画素が発生せず、高精度な赤外線検出が可能となる。 In the infrared sensor 100 and the infrared sensor array according to the first exemplary embodiment, the infrared absorbing metal film 12 is provided with the slit 16 to electrically insulate the infrared absorbing metal film 12 of the joint portion 14 and the umbrella portion 17. ing. For this reason, even if an electric charge is generated in the infrared absorbing metal film 12 of the joint portion 14 when detecting the electrical characteristics of the temperature detecting unit 3, the infrared absorbing metal film 12 of the umbrella portion 17 is not charged. Therefore, unlike the conventional structure, an electrostatic force is generated between the infrared absorbing metal film 12 and the Si substrate 1, and the pixels (temperature detection unit and infrared absorption unit) are not tilted. Does not occur, and highly accurate infrared detection becomes possible.
次に、赤外線センサ１００の製造方法について説明する。基本的には、従来技術（特許文献１）に開示されたような一般的な製造プロセスを用いるが、赤外線吸収金属膜１２をパターニングする工程を有する点が異なっている。 Next, a method for manufacturing the infrared sensor 100 will be described. Basically, a general manufacturing process as disclosed in the prior art (Patent Document 1) is used, except that a step of patterning the infrared-absorbing metal film 12 is provided.
Ｓｉ基板１の上に読み出し回路（図示せず）等を作製した後、検知素子６を含む温度検知部３、および配線層９を含む支持脚４を形成する。 After a readout circuit (not shown) or the like is manufactured on the Si substrate 1, the temperature detection unit 3 including the detection element 6 and the support leg 4 including the wiring layer 9 are formed.
次に、第１の有機犠牲層（図示せず）を堆積させた後、赤外線反射部１３を形成する。続いて、第２の犠牲層（図示せず）を形成する。 Next, after depositing a first organic sacrificial layer (not shown), the infrared reflecting portion 13 is formed. Subsequently, a second sacrificial layer (not shown) is formed.
次に、第１および第２犠牲層に開口部を形成し、温度検知部３の表面の一部を露出させる。 Next, an opening is formed in the first and second sacrificial layers, and a part of the surface of the temperature detector 3 is exposed.
次に、第２犠牲層上にＳｉＯ２からなる絶縁膜１１ａ、赤外線吸収金属膜１２を順次形成する。 Next, an insulating film 11a made of SiO 2 and an infrared absorbing metal film 12 are sequentially formed on the second sacrificial layer.
次に、接合部１４と傘部１７の赤外線吸収金属膜１２を分離するために、フォトレジストで写真製版した後、ウエットエッチングまたはドライエッチングにより赤外線吸収金属膜１２を部分的にエッチング除去してスリット１６を形成する。エッチングはパターンが微細なため、ドライエッチングを用いることが好ましい。 Next, in order to separate the infrared-absorbing metal film 12 of the joint portion 14 and the umbrella portion 17, after photoengraving with a photoresist, the infrared-absorbing metal film 12 is partially etched away by wet etching or dry etching to form slits. 16 is formed. Since etching has a fine pattern, dry etching is preferably used.
次に、レジストマスクを除去した後、ＳｉＯ２からなる絶縁膜１１ｂを形成し、赤外線吸収金属膜１２を絶縁膜１１ａ、１１ｂで挟んだ積層構造とする。 Next, after removing the resist mask, an insulating film 11b made of SiO 2 is formed to form a laminated structure in which the infrared absorbing metal film 12 is sandwiched between the insulating films 11a and 11b.
次に、赤外線吸収部７、第１および第２犠牲層、赤外線反射部１３等をエッチングし、Ｓｉ基板１に達するエッチングホール１５を開口する。 Next, the infrared absorbing portion 7, the first and second sacrificial layers, the infrared reflecting portion 13, and the like are etched to open an etching hole 15 that reaches the Si substrate 1.
次に、例えばＸｅＦ２ガスによりＳｉ基板１をエッチングし、凹部２を形成する。凹部２の横方向の拡がりは、エッチングストップ層５により妨げられる。最後に、第１および第２の有機犠牲層を酸素ガスによるプラズマアッシングにより除去する。 Next, the Si substrate 1 is etched using, for example, XeF 2 gas to form the recess 2. The lateral expansion of the recess 2 is hindered by the etching stop layer 5. Finally, the first and second organic sacrificial layers are removed by plasma ashing with oxygen gas.
以上の工程により、傘状の赤外線吸収部７が設けられた赤外線検知部３がＳｉ基板１に支持脚４で支持された赤外線センサ１００が完成する。 Through the above steps, the infrared sensor 100 in which the infrared detector 3 provided with the umbrella-shaped infrared absorber 7 is supported on the Si substrate 1 by the support legs 4 is completed.
実施の形態２．
図３は、全体が２００で表される、本発明の実施の形態２にかかる赤外線センサの１画素分の平面図である。また、図４は、図３のIII−IIIにおける断面図である。図３、４中、図１、２と同一符号は、同一または相当箇所を示す。
Embodiment 2. FIG.
FIG. 3 is a plan view of one pixel of the infrared sensor according to the second embodiment of the present invention, the whole being represented by 200. 4 is a cross-sectional view taken along line III-III in FIG. 3 and 4, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding portions.
本実施の形態２にかかる赤外線センサ２００では、傘部１７と、傘部１７から張り出した接合部１４を有する赤外線吸収部７において、赤外線吸収金属膜１２が傘部１７にのみ設けられ、接合部１４には設けない構造となっている。なお、赤外線吸収金属膜１２は、少なくとも接合部１４の、温度検知部３の表面に接合された部分に設けないことで、所定の効果を得ることができる。 In the infrared sensor 200 according to the second embodiment, the infrared absorbing metal film 12 is provided only on the umbrella part 17 in the infrared absorbing part 7 having the umbrella part 17 and the joint part 14 protruding from the umbrella part 17. 14 is not provided. Note that the infrared absorbing metal film 12 is not provided at least on the portion of the bonding portion 14 bonded to the surface of the temperature detection unit 3, whereby a predetermined effect can be obtained.
赤外線センサ１００と同様に、赤外線センサ２００をマトリックス状に配置して赤外線センサアレイを形成できる。 Similar to the infrared sensor 100, the infrared sensor 200 can be arranged in a matrix to form an infrared sensor array.
かかる構造を採用することにより、温度検知部３の電気的特性を検出する際に赤外線吸収金属膜１２が帯電することはなく、検出感度のムラや欠陥画素が発生せず、高精度な赤外線検出が可能となる。 By adopting such a structure, the infrared absorbing metal film 12 is not charged when detecting the electrical characteristics of the temperature detection unit 3, so that detection sensitivity unevenness and defective pixels do not occur, and highly accurate infrared detection is possible. Is possible.
本実施の形態２にかかる赤外線センサ２００の製造は、赤外線吸収金属膜１２を傘部１７のみに選択的に作製するか、赤外線吸収金属膜１２を全面に形成した後に接合部１４の赤外線吸収金属膜１２を選択的に除去して行う。 The infrared sensor 200 according to the second embodiment is manufactured by selectively producing the infrared absorbing metal film 12 only on the umbrella portion 17 or forming the infrared absorbing metal film 12 on the entire surface and then forming the infrared absorbing metal of the joint portion 14. This is done by selectively removing the film 12.
１ Ｓｉ基板、２ 凹部、３ 温度検知部、４ 支持脚、５ エッチングストップ層、６ 検知素子、７ 赤外線吸収部、８ 絶縁膜、９ 配線層、１０ 配線、 １１ａ、１１ｂ 絶縁膜、１２ 赤外線吸収金属膜、１３ 赤外線反射部、１４ 接合部、１５ エッチングホール、１６ スリット、１７ 傘部、１００、２００ 赤外線センサ。 DESCRIPTION OF SYMBOLS 1 Si substrate, 2 recessed part, 3 temperature detection part, 4 support leg, 5 etching stop layer, 6 detection element, 7 infrared absorption part, 8 insulating film, 9 wiring layer, 10 wiring, 11a, 11b insulating film, 12 infrared absorption Metal film, 13 Infrared reflecting part, 14 Joint part, 15 Etching hole, 16 Slit, 17 Umbrella part, 100, 200 Infrared sensor.
Claims (6)
凹部を有する基板と、
該基板に接続された支持脚で該凹部の上に支持され、検知素子を含む温度検知部と、
該温度検知部の上に載置され、赤外線吸収金属膜を含む赤外線吸収部であって、該基板の表面に平行な傘部と該傘部を該温度検知部に接合する接合部とを含む該赤外線吸収部とを含み、
該傘部の赤外線吸収金属膜と、該接合部の赤外線吸収金属膜とが、電気的に絶縁されていることを特徴とする赤外線センサ。 An infrared sensor for detecting infrared rays,
A substrate having a recess;
A temperature detection unit including a detection element supported on the recess by a support leg connected to the substrate;
An infrared ray absorbing portion that is placed on the temperature detection portion and includes an infrared ray absorbing metal film, and includes an umbrella portion that is parallel to the surface of the substrate and a joint portion that joins the umbrella portion to the temperature detection portion. Including the infrared absorbing portion,
An infrared sensor, wherein the infrared absorbing metal film of the umbrella part and the infrared absorbing metal film of the joint part are electrically insulated.
凹部を有する基板と、
該基板に接続された支持脚で該凹部の上に支持され、検知素子を含む温度検知部と、
該温度検知部の上に載置された赤外線吸収金属膜を含む赤外線吸収部であって、該基板の表面に平行な傘部と、該傘部の一部を張り出させ、該傘部を該温度検知部に接合する接合部とを含む該赤外線吸収部とを含み、
該赤外線吸収金属膜は、少なくとも該接合部の、該温度検知部の表面に接合された部分には設けないことを特徴とする赤外線センサ。 An infrared sensor for detecting infrared rays,
A substrate having a recess;
A temperature detection unit including a detection element supported on the recess by a support leg connected to the substrate;
An infrared absorption part including an infrared absorption metal film placed on the temperature detection part, wherein an umbrella part parallel to the surface of the substrate and a part of the umbrella part are projected, and the umbrella part is Including the infrared absorption part including a joint part joined to the temperature detection part,
The infrared sensor is characterized in that the infrared absorbing metal film is not provided at least in a portion of the joint portion joined to the surface of the temperature detecting portion.
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| JP2003065842A (en) * | 2001-06-15 | 2003-03-05 | Mitsubishi Electric Corp | Infrared detector |
| JP2006220555A (en) * | 2005-02-10 | 2006-08-24 | Toshiba Corp | Non-cooled infrared detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003065842A (en) * | 2001-06-15 | 2003-03-05 | Mitsubishi Electric Corp | Infrared detector |
| JP2006220555A (en) * | 2005-02-10 | 2006-08-24 | Toshiba Corp | Non-cooled infrared detector |
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