JP2011187482A - Solid-state imaging apparatus, module for optical device, and method of manufacturing solid-state imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus, a module for optical device and a method of manufacturing the solid-state imaging apparatus, in which the module is easily made thin, whose manufacturing cost is reduced, and in which adhesive strength between the solid-state imaging element and a translucent member is improved. <P>SOLUTION: The solid-state imaging apparatus 100 is configured such that the upper surface of a part of a cover part 6a which is provided above the periphery of an imaging region 3 is covered with a sealing resin 11. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device including a cover that covers a main surface of a solid-state imaging device, an optical device module using the solid-state imaging device, and a manufacturing method of the solid-state imaging device.

  Solid-state imaging devices that convert optical signals into electrical signals, such as CCD (Charge Coupled Device) image sensors and CMOS (Complementary Metal Oxide Semiconductor) image sensors, have been conventionally used. A structure for preventing flare caused by stray light caused by the penetration of reflected light is known.

  FIG. 15 and FIG. 16 show a schematic configuration of a solid-state imaging device according to Patent Document 1, which is an example of a conventional solid-state imaging device.

  The solid-state imaging device shown in FIG. 15 has a protective seal 8b bonded to the surface of a transparent member 6b bonded to the imaging region 3 using a transparent adhesive 5b, and is resin-sealed by a transfer mold method. Is done. Thereafter, as shown in FIG. 16, after the individual pieces (along the alternate long and short dash line L shown in FIG. 15) are divided by the dicer, the solid-state imaging device 101 according to Patent Document 1 is separated from the transparent member 6b by peeling off the protective seal 8b. And the sealing resin 11 are formed thick in the range from 20 μm to 150 μm, preferably in the range from 50 μm to 100 μm. With this configuration, the solid-state imaging device 101 according to Patent Document 1 is supposed to be able to prevent flare due to intrusion of reflected light.

JP 2008-219854 A (published September 18, 2008)

  However, in the solid-state imaging device 101 disclosed in Patent Document 1, the solid-state imaging device is more preferable than the transparent member 6b that is a transparent cover on the solid-state imaging device 2 in order to prevent flare caused by the intrusion of reflected light. The sealing resin 11 that is a light-shielding resin that covers the main surface other than the transparent member 6b in FIG. At this time, if the distance from the imaging region 3 to the sealing resin 11 is increased, it is necessary to increase the thickness of the sealing resin 11, so that it is difficult to reduce the thickness of the module using the solid-state imaging device 101. The problem occurs.

  Further, in the solid-state imaging device 101 disclosed in Patent Document 1, the transparent member 6b may be peeled off on the upper surface side, so that the adhesive strength between the solid-state imaging element 2 and the transparent member 6b is insufficient. Occurs.

  Further, in the solid-state imaging device 101 disclosed in Patent Document 1, in order to reduce the thickness of the sealing resin 11, it is necessary to reduce the interval from the imaging region 3 to the sealing resin 11. For this reason, it is necessary to individually change the size of the transparent member 6b according to the difference in size between the imaging region 3 and the microlens array 4, and the production efficiency is improved by unifying the members constituting the transparent member 6b. As a result, there arises a problem that it is difficult to reduce the manufacturing cost.

  The present invention has been made in view of the above problems, and its object is to facilitate the thinning of the module and to reduce the manufacturing cost. Further, the present invention provides a solid-state imaging device and a translucent member. An object of the present invention is to realize a solid-state imaging device, a module for an optical device, and a manufacturing method of the solid-state imaging device that can improve the adhesive strength.

  In order to solve the above problems, a solid-state imaging device of the present invention includes a solid-state imaging device having an effective pixel region, a translucent member provided above the effective pixel region and its periphery, and the solid-state imaging device. A light-blocking sealing member that covers a side surface of the translucent member, wherein the translucent member is provided above the periphery of the effective pixel region. The upper surface of the formed portion is covered with the light shielding sealing member.

  According to said structure, since the penetration | invasion of reflected light can be suppressed by the light-shielding sealing member covered with respect to the upper surface of the translucent member, generation | occurrence | production of stray light can be suppressed, Thereby, flare The prevention effect is improved. For this reason, in the solid-state imaging device of the present invention, it is not necessary to increase the thickness of the light-shielding sealing member in order to take measures against flare. Therefore, the thickness of the light-shielding sealing member can be kept smaller than before. . Therefore, it can be said that the solid-state imaging device of the present invention can easily reduce the thickness of the module provided with the device.

  Moreover, according to said structure, the area | region which permeate | transmits the light in the upper surface of a translucent member is restrict | limited, and the flare prevention effect is improved, so that the area which has covered the upper surface of the translucent member with the light-shielding sealing member is large. be able to. For this reason, in order to reduce the thickness of the light shielding sealing member, it is not necessary to reduce the distance from the effective pixel region which is the imaging region to the light shielding sealing member at least on the side surface of the light transmitting member. Therefore, the solid-state imaging device according to the present invention individually changes the size of the translucent member according to the difference in the size of the effective pixel region (including an optical element such as a microlens array mounted on the effective pixel region). This eliminates the need for this, so that it is possible to unify the members constituting the translucent member, thereby improving the production efficiency and reducing the manufacturing cost.

  Therefore, the solid-state imaging device of the present invention can easily reduce the thickness of the module and can reduce the manufacturing cost.

  In addition, the solid-state imaging device of the present invention can reduce the possibility that the light-shielding sealing member covered with respect to the upper surface of the translucent member may peel off the translucent member to the upper surface side. It is possible to improve the adhesive strength with the optical member.

  In the solid-state imaging device of the present invention, a protective film is formed on a portion of the upper surface of the translucent member that is not covered with the light-shielding sealing member, and then the side surface of the translucent member and the light-shielding sealing member are used. It is characterized by being manufactured by covering the upper surface and then removing the protective film.

  According to said structure, since only the part in which the protective film was not formed in the upper surface of a translucent member can be covered with a light shielding sealing member, a solid-state imaging device with easy manufacture is realizable.

  In the solid-state imaging device of the present invention, the size of the portion covered with the light-shielding sealing member on the upper surface of the translucent member is determined according to the size of the protective film.

  According to the above configuration, in consideration of the degree of flare prevention effect, the target thickness of the light-shielding sealing member, and the adhesive strength between the solid-state imaging device and the light-transmitting member, the size of the protective film is adjusted to block the light. The dimension of the upper surface part of the translucent member covered with the sealing member can be optimized.

  In the solid-state imaging device of the present invention, the protective film is an ultraviolet curable resin (hereinafter referred to as “UV curable resin”). The UV (Ultra Violet) curable resin is a resin having a characteristic that changes its state from a liquid to a solid when irradiated with ultraviolet rays having a predetermined intensity or more.

  According to the above configuration, by forming the UV curable resin protective film on the translucent member, the solid-state imaging device has a defect due to adhesion of foreign matters and generation of scratches on the surface of the translucent member. The possibility of occurrence can be reduced, and the production efficiency can be increased.

  Moreover, the module for optical devices of this invention is equipped with the solid-state imaging device of this invention, and there exists an effect similar to the solid-state imaging device of this invention. That is, it can be said that the module for an optical device of the present invention can be miniaturized and has excellent portability and high reliability.

  In order to solve the above problem, a method for manufacturing a solid-state imaging device according to the present invention includes a solid-state imaging device having an effective pixel region, a translucent member provided above the effective pixel region and its periphery, and A solid-state imaging device, comprising: a light-blocking sealing member that covers a side surface of the light-transmitting member; and the effective pixel region in the light-transmitting member The upper surface of the portion provided above the periphery of the cover is covered with the light shielding sealing member.

  According to said structure, the solid-state imaging device of this invention can be manufactured.

  Further, in the method for manufacturing a solid-state imaging device according to the present invention, the first step of forming a protective film on the upper surface of the light transmissive member that is not covered with the light shielding sealing member, and the light shielding sealing member, The method includes a second step of covering a side surface and an upper surface of the translucent member, and a third step of removing the protective film.

  According to said structure, since only the part in which the protective film was not formed in the upper surface of a translucent member can be covered with a light shielding sealing member, the solid-state imaging device of this invention can be manufactured easily. .

  In the solid-state imaging device manufacturing method of the present invention, in the first step, the size of the portion covered with the light-shielding sealing member on the upper surface of the light-transmitting member is set according to the size of the protective film. It is characterized by deciding.

  According to the above configuration, in consideration of the degree of flare prevention effect, the target thickness of the light-shielding sealing member, and the adhesive strength between the solid-state imaging device and the light-transmitting member, the size of the protective film is adjusted to block the light. The dimension of the upper surface part of the translucent member covered with the sealing member can be optimized.

  In the solid-state imaging device manufacturing method of the present invention, a UV curable resin is used as the protective film in the first step.

  According to the above configuration, by forming the UV curable resin protective film on the translucent member, the solid-state imaging device has a defect due to adhesion of foreign matters and generation of scratches on the surface of the translucent member. The possibility of occurrence can be reduced, and the production efficiency can be increased.

  In particular, in the method for manufacturing a solid-state imaging device according to the present invention, in the first step, the protective film is preferably formed with a thickness of 10 μm or less by screen printing.

  The solid-state imaging device of the present invention seals the solid-state imaging device having an effective pixel region, the translucent member provided above the effective pixel region and its periphery, and the solid-state imaging device. A light-blocking sealing member that covers a side surface of the translucent member, wherein the translucent member has an upper surface of a portion provided above the periphery of the effective pixel region. It is the structure covered with the sealing member.

  The solid-state imaging device manufacturing method of the present invention seals the solid-state imaging device having an effective pixel region, the translucent member provided above the effective pixel region and its periphery, and the solid-state imaging device. A solid-state imaging device comprising a light-shielding sealing member that covers a side surface of the translucent member, and is provided above the periphery of the effective pixel region in the translucent member. In this method, the upper surface of the portion is covered with the light shielding sealing member.

  Therefore, the present invention has an effect that the module can be easily thinned, the manufacturing cost can be reduced, and the adhesive strength between the solid-state imaging device and the translucent member can be improved. Play.

It is sectional drawing which shows the structure of the solid-state imaging device which concerns on one embodiment of this invention. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on another embodiment of this invention. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on another embodiment of this invention. It is a figure which shows the manufacturing method of the solid-state imaging device of this invention, Comprising: The thing provided with the solid-state image sensor and the cover part is a top view of the semiconductor wafer formed in multiple numbers on the same surface. It is a figure which shows the manufacturing method of the solid-state imaging device of this invention, and is arrow sectional drawing which looked at FIG. 4 from the XX cross section. It is a figure which shows the manufacturing method of the solid-state imaging device of this invention, and is sectional drawing which shows the process of forming a protective film. It is a figure which shows the manufacturing method of the solid-state imaging device of this invention, and is sectional drawing which shows the process of sealing using sealing resin. It is a figure which shows the manufacturing method of the solid-state imaging device of this invention, and is sectional drawing which shows the process of removing a protective film. It is sectional drawing which shows the structure of the solid-state imaging device used as one comparative example with respect to the solid-state imaging device of this invention shown in FIG. It is sectional drawing which shows the structure of the solid-state imaging device used as another comparative example with respect to the solid-state imaging device of this invention shown in FIG. It is sectional drawing which shows the structure of the solid-state imaging device used as another comparative example with respect to the solid-state imaging device of this invention shown in FIG. It is sectional drawing which shows the structure of the solid-state imaging device used as a comparative example with respect to the solid-state imaging device of this invention shown in FIG.2 and FIG.3, respectively. It is sectional drawing which shows the structure of the solid-state imaging device used as another comparative example with respect to the solid-state imaging device of this invention shown in FIG.2 and FIG.3, respectively. It is sectional drawing which shows the structure of the module for optical devices which uses the solid-state imaging device of this invention. It is sectional drawing which shows the manufacturing method of the solid-state imaging device concerning a prior art. It is sectional drawing which shows the manufacturing method and structure of the solid-state imaging device concerning a prior art.

BACKGROUND OF THE INVENTION
FIG. 9 is a cross-sectional view illustrating a configuration of a solid-state imaging device serving as a comparative example with respect to the solid-state imaging device 100 illustrated in FIG. 1 later.

  FIG. 10 is a cross-sectional view illustrating a configuration of a solid-state imaging device serving as another comparative example with respect to the solid-state imaging device 100 illustrated in FIG. 1 later.

  FIG. 11 is a cross-sectional view illustrating a configuration of a solid-state imaging device that is still another comparative example with respect to the solid-state imaging device 100 illustrated in FIG. 1 later.

  FIG. 12 is a cross-sectional view illustrating a configuration of a solid-state imaging device serving as a comparative example with respect to the solid-state imaging devices 200 and 300, which will be illustrated later in FIGS. 2 and 3, respectively.

  FIG. 13 is a cross-sectional view illustrating a configuration of a solid-state imaging device serving as another comparative example with respect to the solid-state imaging devices 200 and 300, which will be illustrated later in FIGS. 2 and 3, respectively.

  Each of the above solid-state imaging devices has the following basic configuration.

  Each of the above-described solid-state imaging devices includes a solid-state imaging device 2, an imaging region (effective pixel region) 3, a microlens array 4, an adhesive portion 5a, a cover (translucent member) 6a, bonding pads 7a and 7b, a wiring substrate 9, A bonding wire 10 and a sealing resin (light-shielding sealing member) 11 are provided.

  The solid-state imaging device 2 is a semiconductor substrate (for example, a silicon single crystal substrate) formed in a rectangular shape in plan view, on which a semiconductor circuit is formed, and is provided on one surface of the wiring substrate 9.

  On the main surface of the solid-state image sensor 2, that is, the surface of the solid-state image sensor 2 on the side opposite to the wiring board 9, an image-capturing region 3 is provided in the center portion. The imaging region 3 is formed in a rectangular shape in plan view, and includes a plurality of light receiving elements (not shown) arranged in a matrix on the main surface of the solid-state imaging element 2.

  A microlens array 4 is mounted in the imaging region 3. The microlens array 4 is composed of a plurality of microlenses 4a arranged in a matrix on the same surface, and each microlens 4a has a one-to-one correspondence with each light receiving element constituting the imaging region 3. It is provided corresponding to.

  The bonding pad 7a of the solid-state image pickup device 2 is connected to the bonding pad 7b of the wiring board 9 by a well-known wire bonding method using the bonding wires 10, whereby the solid-state image pickup device 2 is electrically connected to the wiring board 9. Connected.

  The cover 6a is provided above the main surface of the solid-state imaging device 2 so as to face the imaging region 3 and its peripheral region. That is, the cover 6 a is larger than the imaging region 3 in the direction parallel to the main surface of the solid-state imaging device 2, and therefore the imaging region 3 of the solid-state imaging device 2 in addition to the imaging region 3. The configuration further opposes the peripheral area. The cover 6a is provided to protect the imaging region 3 from external dust and is made of a translucent material (for example, glass).

  Here, a hollow portion 15 exists between the solid-state imaging device 2 and the cover portion 6 a, so that the solid-state image pickup device 2 and the cover portion 6 a thereabove are interposed via the hollow portion 15. Slightly separated. At this time, adhesion between the solid-state imaging device 2 and the cover portion 6a is performed by bonding the periphery (outer periphery) region of the imaging region 3 on the main surface of the solid-state image pickup device 2 and the edge of the cover portion 6a by the bonding portion 5a. Is done by. The imaging region 3 portion on the main surface of the solid-state imaging device 2 and the central portion of the cover portion 6a that are opposed to each other are not directly bonded. Specifically, the bonding portion 5a is a plan view around the imaging region 3 so as not to block the optical path between the imaging region 3 and the cover 6a, that is, so as not to interfere with imaging in the solid-state imaging device. It is formed in a rectangular ring shape.

  The sealing resin 11 shields one side of the wiring substrate 9, the solid-state imaging device 2, the bonding pads 7 a and 7 b, the bonding wire 10, the unbonded bonding portion 5 a portion, and the side surface of the cover portion 6 a. Resin.

  The reason why the hollow portion 15 is provided is that, by providing the hollow portion 15, light from the outside that has passed through the cover portion 6a is not transmitted through other members other than the microlens 4a, and the imaging region 3 is provided. This is because it is possible to prevent light loss from occurring in the middle of the optical path. The solid-state imaging device takes in light from the outside through the cover 6 a and receives an image image by each light receiving element arranged in the imaging region 3 of the solid-state imaging element 2.

  The cover 6 a is opposed to the main surface of the solid-state imaging device 2 and covers at least the imaging area 3 to protect the imaging area 3 from physical damage from the outside. A bonding pad as a terminal for connecting the solid-state imaging device 2 and the wiring board 9 between the adhesive portion 5a (covering portion 6a) and the outer peripheral end (chip end) of the main surface of the solid-state imaging device 2 7a is disposed, but the bonding pad 7a is not covered with the cover 6a. That is, in other words, the bonding portion 5a must be formed between the imaging region 3 and the bonding pad 7a.

  In each of the solid-state imaging devices described above, it is necessary to form the sealing resin 11 higher than the cover portion 6a on the solid-state imaging device 2 in order to prevent flare due to intrusion of reflected light. At this time, when the distance from the imaging region 3 (microlens array 4) to the sealing resin 11 is increased from Wa shown in FIG. 9 to Wb shown in FIG. 10, the thickness of the sealing resin 11 is changed to FIG. From the Ta shown in FIG. 10, it is necessary to increase the size as shown in Tb shown in FIG. 10 (where Ta <Tb), which causes a problem that it is difficult to reduce the thickness of the module using the solid-state imaging device.

  Further, in each of the above-described solid-state imaging devices, when an attempt is made to reduce the thickness of the sealing resin 11 after taking measures to prevent flare due to intrusion of reflected light, as shown in FIG. It is necessary to reduce the adhesion area Wc to the cover 6a. Thereby, in each said solid-state imaging device, the problem that the adhesive strength of the solid-state image sensor 2 and the cover part 6a may fall arises.

  Further, in each of the solid-state imaging devices described above, if the distance from the imaging region 3 to the sealing resin 11 is increased, the thickness of the sealing resin 11 needs to be increased. , It needs to be close to the imaging region 3. For this reason, the size of the imaging region 3 and the microlens array 4 differs depending on whether the size is We shown in FIG. 12 or Wg shown in FIG. 13 (where Wg <We). The size of 6a needs to be individually changed to Wf shown in FIG. 12 or Wh shown in FIG. 13 (where Wh <Wf). In each solid-state imaging device having a different size of the microlens array 4, there is a problem that it is difficult to use the same similarly.

  In each of the following embodiments, as a countermeasure against flare, the thickness of the sealing resin 11, which is a light-shielding resin that covers the main surface of the solid-state image sensor 2 other than the cover 6 a, is suppressed, and the main component of the solid-state image sensor 2. Provided is a solid-state imaging device capable of appropriately securing the bonding area of the cover portion 6a bonded to the surface.

  Further, in each of the following embodiments, heat resistance is applied to the cover 6a bonded to face the solid-state imaging device 2 so as to protect the plurality of solid-state imaging devices 2 formed on the semiconductor wafer. By forming a protective film made of a UV curable resin (ultraviolet curable resin), it is possible to reduce defects on the surface of the cover 6a due to adhesion of foreign matters and generation of scratches, and to increase production efficiency. A method for manufacturing a solid-state imaging device is provided.

  Further, in each of the following embodiments, the size of the cover 6a is unified without being restricted by the light receiving element region (the size of the imaging region 3 and the microlens array 4), thereby improving the production efficiency and reducing the cost. A solid-state imaging device capable of performing the above and a method for manufacturing the solid-state imaging device are provided.

  Further, in each of the following embodiments, a solid that can increase the adhesive strength between the solid-state imaging device 2 and the cover 6a by preventing the cover 6a bonded to the solid-state image sensor 2 from being peeled off. An imaging device and a method for manufacturing the solid-state imaging device are provided.

  Further, in each of the following embodiments, by incorporating the solid-state imaging device of the present invention, a highly reliable module for an optical device that is easy to miniaturize and has high portability is provided.

[Embodiment 1]
FIG. 1 is a cross-sectional view showing a configuration of a solid-state imaging device 100 according to an embodiment of the present invention.

  The solid-state imaging device 100 shown in FIG. 1 has a configuration in which the upper surface of the portion provided above the periphery of the imaging region 3 in the cover 6 a is covered with the sealing resin 11. 13 is different from the basic configuration of each solid-state imaging device shown in FIG.

  That is, the sealing resin 11 does not cover a region located above the imaging region 3 in a direction perpendicular to the main surface of the solid-state imaging device 2, and at least partially covers a region around the region. The upper surface of the cover 6a is covered so as to cover it.

  In addition, the sealing resin 11 is an area on the cover 6a on the upper surface of the cover 6a so as not to cover an area where light from the outside can be appropriately guided to the microlens array 4. It is covered.

  Further, the sealing resin 11 is a region in the cover portion 6a and is covered with respect to the upper surface of the cover portion 6a so as to cover a part or all of the region in which the reflected light can enter (enter). Yes.

  In addition, the sealing resin 11 is positioned above the bonding portion 5a in the direction perpendicular to the main surface of the solid-state imaging device 2, and on the upper surface of the covering portion 6a so as not to be positioned above the hollow portion 15. It is covered.

  According to said structure, since the penetration | invasion of reflected light can be suppressed with the sealing resin 11 covered with respect to the upper surface of the cover part 6a, generation | occurrence | production of stray light can be suppressed, Thereby, flare The prevention effect is improved. For this reason, the solid-state imaging device 100 does not need to increase the thickness of the sealing resin 11 to Ta (see FIG. 9) or Tb (see FIG. 10) in order to take measures against flare. For this reason, in the solid-state imaging device 100, the thickness of the sealing resin 11 can be suppressed to Tc, which is smaller than the conventional one. Therefore, it can be said that the solid-state imaging device 100 can easily reduce the thickness of the module (module for optical device) provided with the device.

  In addition, since the sealing resin 11 covered with respect to the upper surface of the cover 6a functions as a stopper that reduces the possibility that the cover 6a is peeled to the upper surface side, the solid-state imaging device 100 covers the solid-state imaging element 2. It is possible to improve the adhesive strength with the part 6a.

  Furthermore, the solid-state imaging device 100 reduces the interval from the imaging region 3 to the sealing resin 11 when the thickness of the sealing resin 11 is reduced after taking measures to prevent flare due to the intrusion of reflected light. Therefore, Wd (see FIG. 1) larger than Wc (see FIG. 11) can be secured as an adhesion area of the bonding portion 5a to the cover 6a. Thereby, in the solid-state imaging device 100, the problem that there exists a possibility that the adhesive strength of the solid-state imaging element 2 and the cover part 6a may fall can be eliminated.

[Embodiment 2]
FIG. 2 is a cross-sectional view showing a configuration of a solid-state imaging device 200 according to another embodiment of the present invention.

  FIG. 3 is a cross-sectional view showing a configuration of a solid-state imaging device 300 according to still another embodiment of the present invention.

  The solid-state imaging device 200 shown in FIG. 2 and the solid-state imaging device 300 shown in FIG. 3 have the same configuration and effects as the solid-state imaging device 100 shown in FIG. More specific embodiments of the solid-state imaging device 100 depending on whether the size of the solid-state imaging device is We (see FIGS. 2 and 12) or Wg smaller than We (see FIGS. 3 and 13). Show.

  That is, in the solid-state imaging devices 200 and 300, the area (cover amount) covered with the sealing resin 11 on the upper surface of the cover 6 a is as follows according to the sizes We and Wg of the imaging area 3 and the microlens array 4. Has been changed. The area covered with the sealing resin 11 on the upper surface of the cover 6a is Wd (same as the solid-state imaging apparatus 100 shown in FIG. 1) in the imaging area 3 and the microlens array 4 having the size We. On the other hand, in the solid-state imaging device 300 in which the size of the imaging region 3 and the microlens array 4 is Wg smaller than We, Wi is larger than Wd.

  Thus, in the solid-state imaging device of the present invention, the area of the portion covered (or not covered) by the sealing resin 11 on the upper surface of the cover 6a in accordance with the sizes of the imaging region 3 and the microlens array 4. Is suitably adjusted to an arbitrary area. Thereby, in the solid-state imaging devices 200 and 300, it is possible to unify the size of the cover 6a to Wf without being affected by the size We or Wg of the imaging region 3 and the microlens array 4.

  According to the above configuration, the larger the area covering the upper surface of the cover portion 6a with the sealing resin 11, the more the area on the upper surface of the cover portion 6a that transmits light, particularly from the outside, is limited, and flare is prevented. The effect can be improved. For this reason, in order to reduce the thickness of the sealing resin 11, the solid-state imaging devices 200 and 300 do not need to reduce the distance from the imaging region 3 to the sealing resin 11 at least on the side surface of the cover 6a. Therefore, in the solid-state imaging devices 200 and 300, it is not necessary to individually change the size of the cover portion 6a according to the difference in the size We or Wg of the imaging region 3 and the microlens array 4, thereby Since it becomes possible to unify the constituent members to those having a size of Wf, it is possible to improve production efficiency and reduce manufacturing costs.

  Therefore, the solid-state imaging devices 200 and 300 can easily reduce the thickness of the module and can reduce the manufacturing cost.

  Note that the configuration, function, and effect of the solid-state imaging devices 200 and 300 described above can be similarly applied to the solid-state imaging device 100.

  Further, when the size of the imaging region 3 and the microlens array 4 is reduced to Wg while the size of the cover 6a is set to Wf as in the solid-state imaging device 300 illustrated in FIG. The adhesion area of the adhesive portion 5a to the cover portion 6a at the upper side can be further increased. For this reason, in the solid-state imaging device 300 shown in FIG. 3, compared with the solid-state imaging devices 100 and 200, the adhesive strength between the solid-state imaging device 2 and the cover 6a is further improved.

[Embodiment 3]
4-8 is explanatory drawing which shows the manufacturing method of the solid-state imaging device 1. FIG. The solid-state imaging device 1 may be any of the solid-state imaging devices 100, 200, and 300 shown in FIGS.

  FIG. 4 is a diagram illustrating a method for manufacturing the solid-state imaging device 1, and is a top view of the semiconductor wafer 20 including the solid-state imaging device 2 and the cover 6 a formed on the same surface. Specifically, in FIG. 4, a plurality of surfaces of the solid-state imaging device 2 (a plane having the imaging region 3) formed simultaneously on the semiconductor wafer 20 are bonded to face the imaging region 3 of each solid-state imaging device 2. In addition, a state in which each cover portion 6a is formed is shown.

  FIG. 5 is a diagram illustrating a method for manufacturing the solid-state imaging device 1, and is a cross-sectional view taken along the line XX in FIG. For the solid-state imaging device 2, a translucent material disposed to face at least the imaging region 3 in order to protect the imaging region 3 formed on the main surface of the solid-state imaging device 2 from external dust. A cover portion 6a made of (for example, glass) is bonded by the bonding portion 5a.

  FIG. 6 is a diagram illustrating a method for manufacturing the solid-state imaging device 1, and is a cross-sectional view illustrating a process of forming the protective film 8a. The protective film 8a is formed on the upper surface of the cover 6a bonded to the main surface of the solid-state image sensor 2 in a direction perpendicular to the main surface of the solid-state image sensor 2 by using, for example, a screen printing method using the mask 12. At least a region located above the imaging region 3 is formed (first step). The protective film 8a is formed by applying a UV curable resin 8 having heat resistance to a thickness of 10 μm or less using a squeegee 13 and curing the resin by UV curing, thereby forming a film having excellent water resistance and heat resistance. The UV curable resin 8 is a resin having a characteristic that changes its state from a liquid to a solid when irradiated with ultraviolet rays having a predetermined intensity or higher.

  Thereby, the protective film 8a can prevent the cover 6a from being contaminated and scratched, which may occur in the dicing process and the molding process. That is, by forming the protective film 8a of the UV curable resin 8 on the cover 6a, a defect occurs in the solid-state imaging device 1 due to adhesion of foreign matters, generation of scratches, and the like on the surface of the cover 6a. The fear can be reduced and the production efficiency can be increased.

  Here, the protective film 8a is formed on a portion of the upper surface of the cover 6a that should not be covered with the sealing resin 11 (first step). Thereby, since only the part in which the protective film 8a was not formed in the upper surface of the cover part 6a can be covered with the sealing resin 11, the solid-state imaging device 1 can be manufactured easily.

  The area for forming the protective film 8a is determined according to the area or size of the portion to be covered with the sealing resin 11 on the upper surface of the cover 6a (first step). Accordingly, in view of the various effects described above of the solid-state imaging device 1, such as the degree of flare prevention effect, the target thickness of the sealing resin 11, and the adhesive strength between the solid-state imaging element 2 and the cover 6a, the protective film By adjusting the area or dimension for forming 8a, it is possible to optimize the area or dimension of the upper surface portion of the cover portion 6a covered with the sealing resin 11 (or not covered with the sealing resin 11).

  FIG. 7 is a diagram illustrating a method for manufacturing the solid-state imaging device 1, and is a cross-sectional view illustrating a process of performing sealing using the sealing resin 11. By performing well-known transfer molding on the wiring substrate 9 in a state where die bonding and wire bonding are performed on the wiring substrate 9 in the dicing process, the covering portion 6a is obtained. The region other than the region of the protective film 8a formed thereon is covered with the sealing resin 11 (second step).

  By forming the sealing resin 11 in an arbitrary region on the upper surface of the cover 6a in addition to the side surface of the cover 6a, flare due to intrusion of reflected light is prevented and the thickness of the sealing resin 11 is suppressed. Thus, the module can be thinned. In addition, the sealing resin 11 is formed on the upper surface of the cover 6a by adhering to the solid-state imaging element 2 by adjusting the cover amount of the light-shielding resin to be the sealing resin 11 with respect to the upper surface of the cover 6a. It is possible to reinforce the adhesive strength by preventing the cover 6a from being peeled off.

  FIG. 8 is a diagram illustrating a method for manufacturing the solid-state imaging device 1, and is a cross-sectional view illustrating a process of removing the protective film 8a. After the molding process, the release tape 14 is applied to the protective film 8a on the cover 6a, which is divided by a dicer (along the alternate long and short dash line L shown in FIGS. 5 to 7), and the attached release tape 14 is attached. By peeling off the tape 14, the protective film 8a can be easily removed (third step). Thereby, the upper surface of the cover 6a in a clean state can be exposed, and the solid-state imaging device 1 having a clean and excellent optical characteristic can be manufactured.

  The cover 6a may be entirely covered with the sealing resin 11 or may be partially covered with the sealing resin 11 in the upper surface of the portion provided above the periphery of the imaging region 3.

  If there is no hindrance to the reception of the image image in the solid-state imaging device 1, the cover 6 a may be partially covered with the sealing resin 11 on the upper surface of the portion provided above the imaging region 3.

  The module for an optical device according to the present invention includes the solid-state imaging device 1 and has the same effects as the solid-state imaging device 1. That is, the module for an optical device of the present invention can be interpreted as having a small size, excellent portability, and high reliability. Examples of the optical device module of the present invention include optical devices such as a digital camera, a digital video unit, and a mobile phone with a camera function.

[Embodiment 4]
FIG. 14 is a cross-sectional view showing a configuration of an optical device module using the solid-state imaging device 1.

  In the camera module (optical device module) 30, a fixed casing 21 as a holder is bonded to the sealing resin 11 with an adhesive 25 so as to face the imaging region 3 of the solid-state imaging device 1. It is a configuration.

  A lens casing 22 as a barrel having a lens 23 and a light shielding plate 24 is fitted on the upper side of the fixed-side casing 21, and after adjusting the focus of the camera module 30, the fixed-side casing 21 and the lens are arranged. The casing 22 is fixed with an adhesive (not shown).

  The camera module 30 shown in FIG. 14 has a configuration in which the lens 23 is supported by the fixed-side casing 21 and the lens casing 22. However, the fixed focal point in which the fixed-side casing 21 and the lens casing 22 are integrally molded. It is also good.

  An FPC (flexible wiring board) 26 having a connector 27 for connecting to an external device (not shown) is connected to the wiring board 9 of the solid-state imaging device 1 by a connection terminal 28.

  Since the camera module 30 includes the solid-state imaging device 1, the camera module 30 is a small, thin, and high-quality module for an optical device.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  INDUSTRIAL APPLICABILITY The present invention can be used for a solid-state imaging device having a cover that covers the main surface of the solid-state imaging device, an optical device module using the solid-state imaging device, and a method for manufacturing the solid-state imaging device.

1, 100, 200, and 300 Solid-state imaging device 2 Solid-state imaging device 3 Imaging region (effective pixel region)
6a Cover (translucent member)
8 UV curable resin (ultraviolet curable resin)
8a Protective film 11 Sealing resin (light shielding sealing member)
30 Camera module (module for optical device)

Claims (10)

A solid-state imaging device having an effective pixel region;
A translucent member provided above the effective pixel region and its periphery;
A solid-state imaging device that seals the solid-state imaging device, and includes a light-shielding sealing member that covers a side surface of the translucent member,
A solid-state imaging device, wherein the translucent member has an upper surface of a portion provided above the periphery of the effective pixel region covered with the light shielding sealing member. After forming a protective film on the upper surface of the translucent member that is not covered by the light shielding sealing member,
The solid-state imaging device according to claim 1, wherein the light-shielding sealing member is manufactured by covering a side surface and an upper surface of the translucent member and then removing the protective film.   3. The solid-state imaging device according to claim 2, wherein a dimension of a portion covered with the light-shielding sealing member on the upper surface of the translucent member is determined according to a dimension of the protective film.   The solid-state imaging device according to claim 2, wherein the protective film is an ultraviolet curable resin.   The module for optical apparatuses provided with the solid-state imaging device of any one of Claims 1-4. A solid-state imaging device having an effective pixel region;
A translucent member provided above the effective pixel region and its periphery;
The solid-state imaging device is sealed, and a light-shielding sealing member that covers the side surface of the light-transmissive member, and a method for manufacturing a solid-state imaging device,
A method of manufacturing a solid-state imaging device, wherein an upper surface of a portion of the translucent member provided above the periphery of the effective pixel region is covered with the light shielding sealing member. A first step of forming a protective film on a portion of the upper surface of the translucent member that is not covered by the light shielding sealing member;
A second step of covering the side surface and the upper surface of the translucent member by the light shielding sealing member;
The method according to claim 6, further comprising a third step of removing the protective film. In the first step,
8. The method of manufacturing a solid-state imaging device according to claim 7, wherein a size of a portion covered with the light-shielding sealing member on an upper surface of the translucent member is determined according to a size of the protective film. In the first step,
The method for manufacturing a solid-state imaging device according to claim 7, wherein an ultraviolet curable resin is used as the protective film. In the first step,
The method for manufacturing a solid-state imaging device according to claim 7, wherein the protective film is formed by screen printing with a thickness of 10 μm or less.

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