JP2008305714A - Light source device and flat lighting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To effectively utilize by reducing absorption, refraction, and reflection of light without having attenuation and loss of the light. <P>SOLUTION: In a light source device 2, either of four sides 9c of a semiconductor light-emitting device chip 9 is set up to be a chip emitting surface, and a resin enclosed wall 5 is arranged on the remaining sides excluding the chip emitting surface so as to enclose the semiconductor emitting device chip 9. A light guide plate 10 is provided with an incident end surface section 8 for guiding light from the light source device 2, an emitting surface section 10d for emitting light, a counter-emitting surface section 10e at an opposite side of the emitting surface section 10d, and a side section 8c connected with the above-mentioned sections. A transparent resin is filled into a space between the incident end surface section 8 and the enclosed wall 5 so as to make the incident end surface section 8 and the chip emitting surface face each other while the light guide plate 10 and the light source device 2 keep in contact with each other, the light source device 2 and the light guide plate 10 are adhered and connected as well as the semiconductor light-emitting device chip 9 is sealed, and the emitting light from the chip emitting surface is directly guided to the light guide plate 10. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  In the present invention, the light emitting layer (active layer) of the LED, which is a semiconductor light emitting element, has not the surface direction but the side surface direction as the light emitting device (opening). A surrounding wall is provided on the side surface of the light guide plate, and a transparent resin is filled in the space of the surrounding walls in the three side surfaces where the incident end surface portion of the light guide plate and the light emitting device (opening portion) are placed in contact with each other. The semiconductor light emitting element (LED) is sealed and the light guide plate and the light source device are bonded and connected. After the surrounding wall is insert-molded, the space of the surrounding wall is filled with a transparent resin, or the surrounding wall and the transparent resin are sealed. The semiconductor light-emitting element is sealed and the light guide plate and the light source device are bonded and connected at the same time, and the loss (absorption) in the air layer is eliminated and light is efficiently guided to the light guide plate. In addition, there is no refraction due to the air layer and light deflection and expansion Can prevent reflection and absorption by others, and can efficiently guide light into the light guide plate, which makes it possible to reduce the overall thickness of the flat lighting device and reduce the size and productivity In particular, the present invention relates to a light source device capable of improving reliability and a flat illumination device using the light source device.

  As a conventional light source device, there is an LED light source in which an LED lamp in which a light emitting chip installed on a lead frame is sealed with a resin mold is inserted and fixed in a through hole formed in a white support. Are known.

  Further, as a conventional backlight device, a configuration is known in which a plurality of LEDs are arranged linearly and at unequal intervals in the longitudinal direction of the incident surface of the light guide plate.

Further, as a conventional backlight device, an LED is provided on a substrate provided below the light guide plate, and a part of the end side surface on the surface side of the light guide plate is inclined, and the LED on the substrate at the position of the inclined surface is used. The light emitted from the rear surface of the light guide plate toward the inclined surface is reflected by the inclined surface and diffused to the other side of the light guide plate.
JP 2003-258137 A JP 2002-075038 A JP 2004-031064 A

  The above-described conventional light source device includes a lead frame on which a semiconductor light emitting element chip is mounted, and a lead frame on which the semiconductor light emitting element chip is mounted and a portion that includes the semiconductor light emitting element chip and serves as a case of the light source device is made of a reflective resin or the like. And insert molding, die-bonding the semiconductor light emitting element chip, and then filling the opening surrounded by the peripheral wall of the case with a transparent resin or the like. For this reason, since the light source device is completed as a single unit, even if it can be mechanically connected to the light guide plate or the like, an optical layer is provided optically, causing loss (absorption) in the air layer. Thus, the efficiency is deteriorated, and light is deflected or diffused due to refraction in the air layer to reflect or absorb, so that there is a problem in light efficiency, and particularly a small component has a dimensional problem.

  Furthermore, as a conventional backlight device, in a configuration in which a plurality of LEDs are arranged linearly and at unequal intervals in the longitudinal direction of the incident surface of the light guide plate, an air layer is included between the LEDs and the light guide plate. For this reason, loss (absorption) in the air layer is caused and efficiency is deteriorated, and reflection and absorption are caused by deflection and diffusion of light due to refraction in the air layer, and there is a problem in light efficiency. There is a problem that becomes large.

  Further, as a conventional backlight device, an LED is provided on a substrate provided below the light guide plate, and a part of the end side surface on the surface side of the light guide plate is inclined, and the LED on the substrate at the position of the inclined surface is used. Is emitted from the rear surface of the light guide plate toward the inclined surface and reflected by the inclined surface to diffuse the light to the other side of the light guide plate, there is a problem that the thickness direction of the backlight is increased.

(Object of invention)
The present invention has been made in order to solve the above-described problems, and has the purpose of improving the light efficiency, reducing the overall thickness of the flat illumination device, and reducing the overall size of the flat illumination device. Any one of the four side surfaces of the semiconductor light emitting element chip when the single crystal substrate side such as an epi substrate of the semiconductor light emitting element chip is placed on the substrate of the light source device and the right angle direction of the crystal substrate is the side surface direction. (The side direction of the light emitting layer surface of a general LED) is a chip emitting surface, and a surrounding wall is provided so as to surround the semiconductor light emitting element chip in a direction other than the chip emitting surface, thereby reducing the thickness of the light source device. The semiconductor light emitting device chip is filled with a transparent resin in a space surrounded by the three surrounding walls and the incident end face of the light guide plate in a state where the opened chip exit surface and the incident end face portion of the light guide plate are brought together. By light source device and light guide In addition, the light emitted from the semiconductor light emitting element chip can be guided into the light guide plate without touching the air layer, thereby reducing the absorption, refraction, and reflection of light and causing attenuation and loss. It is an object of the present invention to provide a thin light source device that can be used effectively without any trouble and a thin flat illumination device using the light source device.

  In the light source device according to claim 1 of the present invention, a crystal substrate side such as an epitaxial substrate of a semiconductor light-emitting element chip is placed on the substrate, and 4 of the semiconductor light-emitting element chip when a right angle direction of the crystal substrate is a side surface direction. One of the two side surfaces is a chip emission surface.

  The light source device according to claim 1 is configured such that a crystal substrate side such as an epitaxial substrate of a semiconductor light emitting element chip is mounted on the substrate, and the four side surfaces of the semiconductor light emitting element chip are defined as a direction perpendicular to the crystal substrate. Since either one is used as the chip emission surface, the thickness (in the vertical direction of the substrate) relative to the emission direction above the chip can be reduced.

  Further, the light source device according to claim 2 is characterized in that a side wall other than the chip emission surface is provided by a resin so as to surround the semiconductor light emitting element chip on the substrate.

  In the light source device according to the second aspect, since the side wall other than the chip emission surface is provided with resin so as to surround the semiconductor light emitting element chip on the substrate, the emission in the side surface direction other than the chip emission surface can be blocked. it can.

  Furthermore, the light source device according to claim 3 is characterized in that a reflector or a light blocking body is provided on an upper portion where the semiconductor light emitting element chip is filled and sealed with a transparent resin.

  In the light source device according to the third aspect, since the reflector or the light shielding body is provided on the upper portion where the semiconductor light emitting element chip is filled and sealed with the transparent resin, the light emitted from the semiconductor light emitting element chip is directed in the lateral direction of the semiconductor light emitting element chip. It can radiate | emit only from the chip | tip emission surface provided in this.

According to a fourth aspect of the present invention, there is provided a planar illumination device comprising: a semiconductor light-emitting element chip having a crystal substrate side such as an epitaxial substrate of the semiconductor light-emitting element chip mounted on the substrate; A light source device in which any one of the side surfaces is a chip emission surface, and a side wall other than the chip emission surface is provided with a resin wall so as to surround the semiconductor light emitting element chip;
Connected to an incident end face part that guides light from the light source device, an outgoing face part that emits light to the outside, a counter outgoing face part located on the opposite side of the outgoing face part, and the incident end face part, the outgoing face part, and the counter outgoing face part And at least a light guide plate made of a side surface portion,
With the light guide plate and the light source device in contact with each other so that the incident end face and the chip exit face face each other, the space between the incident end face and the surrounding wall is filled with transparent resin to seal the semiconductor light emitting element chip and to be transparent The light source device and the light guide plate are adhesively connected with resin, and the emitted light from the chip emission surface is directly guided into the light guide plate.

According to a fourth aspect of the present invention, there is provided a flat illumination device comprising: a semiconductor light-emitting element chip having four side surfaces when a crystal substrate side such as an epi substrate of the semiconductor light-emitting element chip is placed on the substrate and a right angle direction of the crystal substrate is a side direction; A light source device in which any one of the above is used as a chip emission surface, and a side wall other than the chip emission surface is provided with a resin so as to surround the semiconductor light emitting element chip,
Connected to an incident end face part that guides light from the light source device, an outgoing face part that emits light to the outside, a counter outgoing face part located on the opposite side of the outgoing face part, and the incident end face part, the outgoing face part, and the counter outgoing face part And at least a light guide plate made of a side surface portion,
With the light guide plate and the light source device in contact with each other so that the incident end face and the chip exit face face each other, the space between the incident end face and the surrounding wall is filled with transparent resin to seal the semiconductor light emitting element chip and to be transparent The light source device and the light guide plate are adhesively connected with resin, and the emitted light from the chip emission surface is directly guided into the light guide plate, so that there is no air layer between the light guide plate and the light source device, so that the semiconductor light emitting device chip Can be guided directly into the light guide plate.
Further, the light source device and the light guide plate can be bonded and connected.
Furthermore, since any of the four side surfaces of the semiconductor light emitting element chip is the chip emission surface, the thickness in the direction perpendicular to the substrate of the light source device can be reduced, so that the thickness of the light guide plate can also be reduced. it can.

Furthermore, in the flat illumination device according to claim 5, when the crystal substrate side such as the epitaxial substrate of the semiconductor light emitting element chip is placed on the substrate and the right angle direction of the crystal substrate is the side surface direction, 4 of the semiconductor light emitting element chip. A light source device having one of the side surfaces as a chip exit surface;
Connected to an incident end face part that guides light from the light source device, an outgoing face part that emits light to the outside, a counter outgoing face part located on the opposite side of the outgoing face part, and the incident end face part, the outgoing face part, and the counter outgoing face part And at least a light guide plate made of a side surface portion,
A surrounding wall made of a side other than the chip emitting surface is formed by a resin having reflectivity so as to surround the semiconductor light emitting element chip in a state where the light guide plate and the light source device are in contact with each other so that the incident end face portion and the chip emitting surface are opposed to each other. At the same time, the inside of the surrounding wall is filled with a transparent resin, the semiconductor light emitting element chip is sealed, and the light source device and the light guide plate are adhesively connected with the transparent resin, and the emitted light from the chip emission surface is directly guided into the light guide plate. It is characterized by that.

According to a fifth aspect of the present invention, there is provided a flat illumination device having a crystal substrate side such as an epi substrate of a semiconductor light emitting element chip mounted on the substrate, and the four side surfaces of the semiconductor light emitting element chip when a right angle direction of the crystal substrate is a side direction. A light source device having any one of the chip exit surface,
Connected to an incident end face part that guides light from the light source device, an outgoing face part that emits light to the outside, a counter outgoing face part located on the opposite side of the outgoing face part, and the incident end face part, the outgoing face part, and the counter outgoing face part And at least a light guide plate made of a side surface portion,
A surrounding wall made of a side other than the chip emitting surface is formed by a resin having reflectivity so as to surround the semiconductor light emitting element chip in a state where the light guide plate and the light source device are in contact with each other so that the incident end face portion and the chip emitting surface are opposed to each other. At the same time, the inside of the surrounding wall is filled with a transparent resin, the semiconductor light emitting element chip is sealed, and the light source device and the light guide plate are adhesively connected with the transparent resin, and the emitted light from the chip emission surface is directly guided into the light guide plate. Therefore, the light emitted from the semiconductor light emitting element chip can be guided directly into the light guide plate without having an air layer between the light guide plate and the light source device.
Furthermore, since any of the four side surfaces of the semiconductor light emitting element chip is the chip emission surface, the thickness in the direction perpendicular to the substrate of the light source device can be reduced, so that the thickness of the light guide plate can also be reduced. it can.
Further, the surrounding wall of the semiconductor light emitting element chip of the light source device can be provided and simultaneously sealed with a transparent resin, and at the same time, the light source device and the light guide plate can be bonded and connected.

According to a sixth aspect of the present invention, there is provided a flat illumination device comprising: a semiconductor light-emitting element chip having a crystal substrate side such as an epi-substrate mounted on the substrate; A light source device having two side surfaces as chip emission surfaces;
An incident surface portion that guides light from the light source device, an output surface portion that emits light to the outside, a counter-exit surface portion that is located on the opposite side of the output surface portion, and a side surface portion that is connected to the output surface portion and the anti-output surface portion Comprising, at least, a light guide plate provided with a hole-shaped incident surface portion that penetrates the emission surface portion and the opposite emission surface portion,
The semiconductor light emitting device chip of the light source device is inserted into the hole-shaped incident surface portion so that the light guide plate is overlaid on the substrate of the light source device, and the semiconductor light emitting device chip is sealed with the light guide plate and the light source device in contact with each other. The hole-shaped portion is filled with a transparent resin, the light source device and the incident surface portion of the light guide plate are adhesively connected with the transparent resin, and the emitted light from the chip emission surface is directly guided into the light guide plate.

According to a sixth aspect of the present invention, there is provided a flat illumination device comprising: a semiconductor light-emitting element chip having four side surfaces when a crystal substrate side such as an epitaxial substrate of the semiconductor light-emitting element chip is placed on the substrate; A light source device having a chip exit surface;
An incident surface portion that guides light from the light source device, an output surface portion that emits light to the outside, a counter-exit surface portion that is located on the opposite side of the output surface portion, and a side surface portion that is connected to the output surface portion and the anti-output surface portion Comprising, at least, a light guide plate provided with a hole-shaped incident surface portion that penetrates the emission surface portion and the opposite emission surface portion,
The semiconductor light emitting device chip of the light source device is inserted into the hole-shaped incident surface portion so that the light guide plate is overlaid on the substrate of the light source device, and the semiconductor light emitting device chip is sealed with the light guide plate and the light source device in contact with each other. The hole-shaped portion is filled with a transparent resin, and the light source device and the light incident surface portion of the light guide plate are adhesively connected with the transparent resin, and the light emitted from the chip light emission surface is directly guided into the light guide plate. All of the emitted light can be guided into the light guide plate, and the emitted light from the semiconductor light emitting element chip can be guided directly into the light guide plate without having an air layer between the light guide plate and the light source device.
In addition, since the four side surfaces of the semiconductor light emitting element chip are chip emission surfaces, the thickness in the direction perpendicular to the substrate of the light source device can be reduced, so that the thickness of the light guide plate can also be reduced.
Furthermore, the semiconductor light emitting device chip of the light source device can be sealed with a transparent resin and the light source device and the light guide plate can be bonded and connected simultaneously.

  Furthermore, the flat illumination device according to claim 7 is characterized in that the light source device is provided with a reflector or a light-shielding body on an upper portion where the semiconductor light emitting element chip is filled and sealed with a transparent resin.

  In the planar illumination device according to the seventh aspect, since the light source device is provided with the reflector or the light shield on the upper portion where the semiconductor light emitting element chip is filled and sealed with the transparent resin, the light emitted from the semiconductor light emitting element chip is transmitted to the semiconductor light emitting element. It can radiate | emit only from the chip | tip emission surface provided in the side surface direction of the chip | tip.

  The planar illumination device according to claim 8 is characterized in that the transparent resin has a fluorescent material and emits light having the same or different wavelength as the light emitted from the semiconductor light emitting element chip by the light emitted from the semiconductor light emitting element chip. And

  The flat illumination device according to claim 8 is intended because the transparent resin has a fluorescent material and emits light having the same or different wavelength as the light emitted from the semiconductor light emitting element chip by the light emitted from the semiconductor light emitting element chip. The emission color can be obtained and subtle color control can be performed.

As described above, in the light source device according to claim 1, the semiconductor light-emitting element chip when the crystal substrate side such as the epitaxial substrate of the semiconductor light-emitting element chip is placed on the substrate and the perpendicular direction of the crystal substrate is the side surface direction. Since any one of the four side surfaces is used as the chip emission surface, the thickness (vertical direction of the substrate) relative to the upper emission direction can be reduced.
Therefore, the thickness etc. of the whole apparatus using the light source device of the present invention can be reduced and the size can be reduced.

In the light source device according to the second aspect, since the side wall other than the chip emission surface is provided with resin so as to surround the semiconductor light emitting element chip on the substrate, the emission in the side surface direction other than the chip emission surface can be blocked. it can.
For this reason, the efficiency of light emitted from the light exit surface can be improved.

In the light source device according to the third aspect, since the reflector or the light shielding body is provided on the upper portion where the semiconductor light emitting element chip is filled and sealed with the transparent resin, the light emitted from the semiconductor light emitting element chip is directed in the lateral direction of the semiconductor light emitting element chip. It can radiate | emit only from the chip | tip emission surface provided in this.
Therefore, the efficiency of light emitted from the chip emission surface can be improved.

According to a fourth aspect of the present invention, there is provided a flat illumination device comprising: a semiconductor light-emitting element chip having four side surfaces when a crystal substrate side such as an epi substrate of the semiconductor light-emitting element chip is placed on the substrate and a right angle direction of the crystal substrate is a side direction; A light source device in which any one of the above is used as a chip emission surface, and a side wall other than the chip emission surface is provided with a resin so as to surround the semiconductor light emitting element chip,
Connected to an incident end face part that guides light from the light source device, an outgoing face part that emits light to the outside, a counter outgoing face part located on the opposite side of the outgoing face part, and the incident end face part, the outgoing face part, and the counter outgoing face part And at least a light guide plate made of a side surface portion,
With the light guide plate and the light source device in contact with each other so that the incident end face and the chip exit face face each other, the space between the incident end face and the surrounding wall is filled with transparent resin to seal the semiconductor light emitting element chip and to be transparent The light source device and the light guide plate are adhesively connected with resin, and the emitted light from the chip emission surface is directly guided into the light guide plate, so that there is no air layer between the light guide plate and the light source device, so that the semiconductor light emitting device chip Can be guided directly into the light guide plate.
Therefore, loss (absorption) in the air layer can be eliminated and the light guide plate can be efficiently guided to the light guide plate, and since there is no refraction due to the air layer, reflection and absorption to the other due to light deflection and diffusion can be prevented, and the light guide plate can be efficiently produced. Can lead in.
Further, the light source device and the light guide plate can be bonded and connected.
Therefore, it can reduce in size and can improve productivity and reliability.
Furthermore, since any of the four side surfaces of the semiconductor light emitting element chip is the chip emission surface, the thickness in the direction perpendicular to the substrate of the light source device can be reduced, so that the thickness of the light guide plate can also be reduced. it can.
Therefore, the thickness of the entire flat illumination device can be reduced and the size can be reduced.

According to a fifth aspect of the present invention, there is provided a flat illumination device having a crystal substrate side such as an epi substrate of a semiconductor light emitting element chip mounted on the substrate, and the four side surfaces of the semiconductor light emitting element chip when a right angle direction of the crystal substrate is a side direction. A light source device having any one of the chip exit surface,
Connected to an incident end face part that guides light from the light source device, an outgoing face part that emits light to the outside, a counter outgoing face part located on the opposite side of the outgoing face part, and the incident end face part, the outgoing face part, and the counter outgoing face part And at least a light guide plate made of a side surface portion,
A surrounding wall made of a side other than the chip emitting surface is formed by a resin having reflectivity so as to surround the semiconductor light emitting element chip in a state where the light guide plate and the light source device are in contact with each other so that the incident end face portion and the chip emitting surface are opposed to each other. At the same time, the inside of the surrounding wall is filled with a transparent resin, the semiconductor light emitting element chip is sealed, and the light source device and the light guide plate are adhesively connected with the transparent resin, and the emitted light from the chip emission surface is directly guided into the light guide plate. Therefore, the light emitted from the semiconductor light emitting element chip can be guided directly into the light guide plate without having an air layer between the light guide plate and the light source device.
Therefore, loss (absorption) in the air layer can be eliminated and the light guide plate can be efficiently guided to the light guide plate, and since there is no refraction due to the air layer, reflection and absorption to the other due to light deflection and diffusion can be prevented, and the light guide plate can be efficiently produced. Can lead in.
Furthermore, since any of the four side surfaces of the semiconductor light emitting element chip is the chip emission surface, the thickness in the direction perpendicular to the substrate of the light source device can be reduced, so that the thickness of the light guide plate can also be reduced. it can.
Therefore, the thickness of the entire flat illumination device can be reduced and the size can be reduced.
Further, the surrounding wall of the semiconductor light emitting element chip of the light source device can be provided and simultaneously sealed with a transparent resin, and at the same time, the light source device and the light guide plate can be bonded and connected.
Therefore, productivity can be improved and reliability can be improved and downsized.

According to a sixth aspect of the present invention, there is provided a flat illumination device comprising: a semiconductor light-emitting element chip having four side surfaces when a crystal substrate side such as an epitaxial substrate of the semiconductor light-emitting element chip is placed on the substrate; A light source device having a chip exit surface;
An incident surface portion that guides light from the light source device, an output surface portion that emits light to the outside, a counter-exit surface portion that is located on the opposite side of the output surface portion, and a side surface portion that is connected to the output surface portion and the anti-output surface portion Comprising, at least, a light guide plate provided with a hole-shaped incident surface portion that penetrates the emission surface portion and the opposite emission surface portion,
The semiconductor light emitting device chip of the light source device is inserted into the hole-shaped incident surface portion so that the light guide plate is overlaid on the substrate of the light source device, and the semiconductor light emitting device chip is sealed with the light guide plate and the light source device in contact with each other. The hole-shaped portion is filled with a transparent resin, and the light source device and the light incident surface portion of the light guide plate are adhesively connected with the transparent resin, and the light emitted from the chip light emission surface is directly guided into the light guide plate. All of the emitted light can be guided into the light guide plate, and the emitted light from the semiconductor light emitting element chip can be guided directly into the light guide plate without having an air layer between the light guide plate and the light source device.
Therefore, loss (absorption) in the air layer can be eliminated and the light guide plate can be efficiently guided to the light guide plate, and since there is no refraction due to the air layer, reflection and absorption to the other due to light deflection and diffusion can be prevented, and the light guide plate can be efficiently produced. Can lead in.
In addition, since the four side surfaces of the semiconductor light emitting element chip are chip emission surfaces, the thickness in the direction perpendicular to the substrate of the light source device can be reduced, so that the thickness of the light guide plate can also be reduced.
Therefore, the thickness of the entire flat illumination device can be reduced and the size can be reduced.
Furthermore, the semiconductor light emitting device chip of the light source device can be sealed with a transparent resin and the light source device and the light guide plate can be bonded and connected simultaneously.
Therefore, productivity can be improved and reliability can be improved and downsized.

In the planar illumination device according to the seventh aspect, since the light source device is provided with the reflector or the light shield on the upper portion where the semiconductor light emitting element chip is filled and sealed with the transparent resin, the light emitted from the semiconductor light emitting element chip is transmitted to the semiconductor light emitting element. It can radiate | emit only from the chip | tip emission surface provided in the side surface direction of the chip | tip.
Therefore, the efficiency of light emitted from the chip emission surface can be improved.

The flat illumination device according to claim 8 is intended because the transparent resin has a fluorescent material and emits light having the same or different wavelength as the light emitted from the semiconductor light emitting element chip by the light emitted from the semiconductor light emitting element chip. The emission color can be obtained and subtle color control can be performed.
Therefore, it is possible to obtain outgoing light of any wavelength with a small number of parts and to reduce the size.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
1 is an exploded perspective view showing an example of a flat illumination device including a light source device according to the present invention, FIG. 2 is a perspective view showing an example of a light source device according to the present invention, and FIGS. FIG. 4 is a perspective view of a semiconductor light-emitting element chip used in the light source device according to the present invention, and FIGS. 5A to 5C are diagrams of the light source device according to the present invention. FIGS. 6A to 6C are plan views showing examples of the light source device according to the present invention, and FIGS. 7A to 7C are used for the flat illumination device according to the present invention. FIG. 8 is a partially enlarged cross-sectional view of a flat illumination device according to the present invention.

  In addition, this invention provides the following light guide plates and planar illuminating devices. That is, when the semiconductor light emitting device chip in the light source device is placed on the substrate, the crystal substrate side such as an epi substrate of the semiconductor light emitting device chip is placed, and generally the direction opposite to the placement is the emission surface (opening portion). However, in the present invention, the direction perpendicular to the crystal substrate (the side direction of the light emitting layer, not the surface direction of the light emitting layer) is the side surface direction, and any one of the four side surfaces is the output surface. Provided with a resin surrounding wall other than the exit surface to surround the chip, providing a thin light source device and entering with the exit surface of the light source device and the incident end surface portion of the light guide plate in contact with each other The space between the end face and the surrounding wall is filled with a transparent resin to seal the semiconductor light emitting element chip, and the light source device and the light guide plate are adhesively connected with the transparent resin so that the emitted light from the semiconductor light emitting element chip is directly put into the light guide plate. Guide, thin and best light There is provided a planar illumination device using the limited.

  In addition, when the light source device is provided with a surrounding wall, it has reflectivity so as to surround the semiconductor light emitting element chip in a state where the light guide plate and the light source device are in contact with each other so that the incident end face portion and the light emitting surface of the light guide plate face each other. Provided is a flat illumination device in which a surrounding wall is provided by the resin, and a transparent resin is filled inside the surrounding wall to seal a semiconductor light emitting element chip, and the light source device and the light guide plate are bonded and connected with the transparent resin.

  Furthermore, a light source device and a flat illumination device are provided which are provided with a reflector or a light-shielding body on an upper portion where a light source device or a semiconductor light emitting element chip is filled and sealed with a transparent resin so as not to leak outside.

  As shown in FIG. 1, the flat illumination device 1 includes a light guide plate 10 with a light source device 2 in which a reflector 13, a light guide plate 10, and a light source device 2 are bonded and integrated in a case 11, and the light source device 2. It is the structure which consists of the light-shielding body 12 mounted on top. The light guide plate 10 and the light source device 2 are an integrated unit in which the incident end face portion 8 of the light guide plate 10 and the emission portion 7 of the light source device 2 are bonded and connected with a transparent resin.

  The light guide plate 10 is formed of a transparent acrylic resin (PMMA) or polycarbonate (PC) having a refractive index of about 1.4 to 1.7. As shown in FIG. 7A, the light guide plate 10 includes an incident end face portion 8 that guides light from the light source device 2, an exit face portion 10d that emits light from the incident end face portion 8, and the opposite of the exit face portion 10d. It consists of a counter-exit surface portion 10e located on the side, and a side surface portion 8c that intersects the output surface portion 10d and the counter-exit surface portion 10e.

  Although not shown in the drawings, the exit surface portion 10d and the counter-exit surface portion 10e of the light guide plate 10 are provided with fine dots, grooves, and the like having various shapes so as to efficiently emit light to the outside. Various shapes in this case include a fine arc shape, a fine ellipse, a fine polygonal column, a fine prism, a fine polygonal pyramid, a polygonal trapezoidal cone, and the like. It is applied to the surface portion 10e.

The light incident on the light guide plate 10 travels into the light guide plate 10 in a range where the refractive index γ satisfies the expression 0 ≦ | γ | ≦ Sin ⁻¹ (1 / n). For example, since the refractive index of acrylic resin, which is a resin material used for the general light guide plate 10, is about n = 1.49, the maximum incident angle is from the exit surface portion 10 d direction of the entrance end surface portion 8 to the opposite exit surface portion 10 e. The light in the direction and the light from the counter-exiting surface portion 10e direction to the emitting surface portion 10d direction have an incident angle of 90 °, and the refraction angle γ refracted at the incident end surface portion 8 is in a range of γ = 0 to ± 42 °.

  Further, the light incident on the light guide plate 10 within the range of the refraction angle γ = 0 to ± 42 ° is expressed as Sin α = (1 / n) at the boundary surface between the light guide plate 10 and the air layer (refractive index n = 1). ) Can be used to express the critical angle. For example, since the refractive index of acrylic resin, which is a resin material used for the general light guide plate 10, is about n = 1.49, the critical angle α is about α = 42 °. If the light exiting surface 10d and the light exiting surface 10e of the light guide plate 10 have no projections or depressions for deflecting light rays, or if the critical angle α is not exceeded, the light in the light guide plate 10 is transmitted through the light exiting surface 10d and the light exiting surface 10e. All of the light travels in the opposite direction of the incident end face 8 while being totally reflected.

  However, in the above case, the thickness of the light guide plate 10 is uniform and flat. Although not shown, when the light guide plate 10 has a wedge shape, the critical angle α is broken by the wedge-shaped taper (degree of inclination) to cause a taper leak.

  In addition, the thickness of the light guide plate 10 and the thickness of the incident end surface portion 8 are determined by the height of the opening 6 (emission portion 7) (the wall end 5c of the surrounding wall 5 and the wall ends 5c at both ends) of the light source device 2 described later. It is a thickness that coincides with the thickness of the secondary plane portion formed by the interval.

  Further, as shown in FIG. 7B, the light guide plate 10 a is provided with a partially arcuate recess 8 a in the incident end surface portion 8 to receive light emitted from the actual light source device 2. The arc-shaped concave portion 8a is processed so as to be able to be fitted to the protruding convex portion 3c of the substrate 3 of the light source device 2 shown in FIG.

  As shown in FIG. 2 and FIGS. 3A to 3C, the light source device 2 mounts the bottom 9 e side of the crystal substrate 9 such as an epi substrate of the semiconductor light emitting element chip 9 on the substrate 3. Then, die bonding is performed with an adhesive so that any one of the four side surfaces 9c of the semiconductor light emitting element chip 9 is the chip emission surface 9c when the right angle direction of 9 is the side surface 9c direction.

  Further, in the light source device 2, a side wall other than the chip emission surface 9 c is provided on the substrate 3 with resin so as to surround the semiconductor light emitting element chip 9.

  The substrate 3 is provided with a wiring pattern 4 and a mounting pattern for the semiconductor light emitting element chip 9 by etching, sputtering, printing, vapor deposition, or the like on a thin film material such as a polyimide film or an FR4 film. A terminal pattern 4b is provided at the end of the substrate 3.

  The substrate 3 is similarly provided with a wiring pattern 4 and a mounting pattern for the semiconductor light emitting element chip 9 on an insulating material such as a liquid crystal polymer made of modified polyamide, polybutylene terephthalate, nylon 46, aromatic polyester, or the like. May be. At this time, the substrate 3 may be mixed with white powder such as titanium oxide in order to improve light reflectivity and obtain light shielding properties.

  Further, the substrate 3 may be formed by placing a wiring pattern 4 or a semiconductor light emitting element chip 9 mounting pattern on a laminated plate made of silicon resin, paper epoxy resin, synthetic fiber cloth epoxy resin and paper phenol resin, or a plate made of polycarbonate or the like. good.

  As shown in FIG. 3 (c), the substrate 3 extends a portion of the surface 3a on which the semiconductor light emitting element chip 9, the wiring pattern 4, and the surrounding wall 5 are provided, and the incident end face of the light guide plate 10 is extended to this portion. The parts 8, 8a and the like are placed, and the light guide plate 10 is bonded and connected simultaneously with the sealing of the semiconductor light emitting element chip 9 and the like by the transparent resin 14 and the like filled in the space of the surrounding wall 5.

  Moreover, as shown in FIG.6 (c), the board | substrate 3 has the circular-arc-shaped convex part 3c partially, and it respond | corresponds to the circular-arc-shaped recessed part 8a of the light-guide plate 10a so that it can fit. It is.

  The surrounding wall 5 is made of a material such as polyphthalamide (PPA), liquid crystal polymer resin, epoxy resin, or silicone resin, and is provided at a height higher than the thickness of the semiconductor light-emitting element chip 9. 5b, rear wall 5a and the like. In addition, in order to improve light reflectivity and to obtain light shielding properties, the surrounding wall 5 may be formed using a material mixed with white powder such as titanium oxide.

  In addition, the surrounding wall 5 has a secondary plane portion formed by the height of the wall end 5 c and the interval between the wall ends 5 c at both ends as an emission portion 7 (opening portion 6), and the emission portion 7 is an incident end face portion of the light guide plate 10. 8 (8a).

  As shown in FIGS. 5A to 5C, the substrate 3 is arranged such that the wall end 5 c comes to a position (dotted line) where the incident end face portion 8 of the light guide plate 10 is placed.

  In addition, the surrounding wall 5 is provided with a side part 5b obliquely from the two wall ends 5c, a straight rear wall part 5a is provided on the side part 5b, and an opening part 6 having an extension from the rear wall part 5a ( The shape of the emitting portion 7), the shape of the two wall ends 5c connected in a curved shape, the side wall 5b straight from the two wall edges 5c, and the rear wall 5a straight from the side wall 5b to the corner. Or a shape in which the rear wall portion 5a is folded in two.

  Furthermore, the surrounding wall 5 may be provided with two side portions 5b obliquely from the two wall ends 5c, and the side portions 5b may be connected to each other. Further, the surrounding wall 5 may enclose a plurality of semiconductor light emitting element chips 9 with one surrounding wall 5 without surrounding individual semiconductor light emitting element chips 9.

  As shown in FIG. 6A, semiconductor light-emitting element chips 9 having different emission colors on one surrounding wall 5 (for example, red emission 9-R, green emission 9-G, blue emission 9-B to obtain white light). The semiconductor light emitting element chips 9) having the three types of emission colors may be provided.

  Further, the surrounding wall 5 may be provided with the surrounding wall 5 in various shapes on one substrate 3, and the semiconductor light emitting element chip 9 itself is placed on one side 9 c as the emitting portion 7, or the semiconductor light emitting element chip 9. The two side surfaces 9c of the semiconductor light emitting element chip 9b on which it is placed obliquely may be used as the emitting portion 7.

  As shown in FIG. 6B, the light source device 2 includes the semiconductor light emitting element chip 9 and the semiconductor light emitting element chip 9 b placed on the substrate 3, and the wall end 5 c of the surrounding wall 5 is the incident end surface portion 8 of the light guide plate 10. The wall end 5c comes to the front (in the direction of the light guide plate 10) from the position (dotted line).

  Further, as shown in FIG. 6C, the light source device 2 is provided with a protruding convex portion 3c on the substrate 3 in the direction of the emitting portion 7, and an arc-shaped concave portion 8a of the incident end face portion 8 provided on the light guide plate 10a. It is shaped so that it can be fitted to.

  Although not shown, the light source device 2 is a flat thin plate corresponding to the pattern 4 such as a lead frame on which the semiconductor light emitting element chip 9 is placed or a lead frame having a circuit configuration, the surrounding wall 5 and the substrate 3 by injection or transfer molding. The shape portion or the like may be integrally formed with resin.

  Further, in the case of forming an integrated resin, the portion that becomes the substrate 3 portion and the surrounding wall 5 portion does not have to be a mirror surface completely, and the side surface of the semiconductor light emitting element chip 9 other than the emitting portion 7 is processed by processing fine irregularities. The outgoing light from 9c can be used to obtain irregularly reflected light, and the bond (bonding) with the transparent resin 14 to be filled can be strengthened.

  The lead frame (not shown) is made of a material having good electrical conductivity and toughness and plasticity, such as phosphor bronze material and aluminum. Further, a precious metal plating such as a gold plating or a copper plating is applied after the plating. In addition, when the exposed part and the semiconductor light emitting element chip 9 are placed and die-bonded or when the bonding wire is wire-bonded, the surface of the lead frame is prevented from being oxidized and the electric resistance is reduced. Let

  The semiconductor light emitting element chip 9 is selected from an LED, a laser, and the like. For example, in the case of an LED, an n-nitride semiconductor is formed on an upper layer of a sapphire substrate or the like made of a semiconductor chip of a compound such as a quaternary compound or an InGaAlP, InGaAlN, or InGaN compound. A layer is provided, a light emitting layer 9d is provided thereon, and a p-nitride semiconductor layer is further provided thereon, and then epitaxially grown. As shown in FIG. 4, the semiconductor light emitting element chip 9 emits outgoing light L from the light emitting layer 9d in four directions, from four side faces 9c, an upper face 9a, and the like. In this example, any one of the four side surfaces 9c of the semiconductor light emitting device chip 9 is used as the chip emission surface when the direction perpendicular to the crystal substrate such as the epi substrate is the side surface direction 9c.

  The semiconductor light-emitting element chip 9 is composed of high-luminance light-emitting elements such as red light emission (R), blue light emission (B), and green light emission (G), and in the case of white light, these red light emission (R) and blue light emission. (B) Three primary colors of green light emission (G) are provided in close proximity, and various emission colors can be emitted by combining RGB from single color emission light.

  Further, the semiconductor light emitting element chip 9 is filled with a resin in which a wavelength conversion material made of an inorganic fluorescent pigment, an organic fluorescent dye, or the like is mixed in a colorless transparent resin 14 to emit light of the semiconductor light emitting element chip 9 itself. Alternatively, light obtained by mixing the semiconductor light emitting element chip 9 excited and emitted by the semiconductor light emitting element chip 9 with light having a different wavelength may be emitted.

  When the flat illumination device 1 is configured, as shown in FIG. 8, the light emitting device 7 and the light incident plate 8 face each other on the surface 3 a of the substrate 3 of the light source device 2. In this state, the space between the incident end surface 8 and the surrounding wall 5 is filled with the transparent resin 14 in a state where the emitting portion 7 and the incident end surface 8 are in contact with each other, and the semiconductor light emitting element chip 9 is sealed. The light source device 2 and the light guide plate 10 are adhesively connected with the transparent resin 14.

  Similarly, the incident end face is placed in a state where the emitting portion 7 of the light source device 2 and the arc-shaped concave portion 8a of the incident end face portion 8 of the light guide plate 10a are opposed to each other and the emitting portion 7 and the concave portion 8a are in contact with each other. The space between the portion 8 and the surrounding wall 5 is filled with a transparent resin 14 to seal the semiconductor light emitting element chip 9 and the light source device 2 and the light guide plate 10 are bonded and connected with the transparent resin 14.

  The transparent resin 14 is made of a transparent epoxy resin, silicone resin, or the like, and is filled into the space between the incident end face portion 8 and the surrounding wall 5 by injection, cylinder, or the like, sealing the semiconductor light emitting element chip 9, the light source device 2, and the light guide plate. 10 is adhesively connected.

  In addition, the transparent resin 14 may be filled with a wavelength conversion material (fluorescent material), and the light emitted from the semiconductor light emitting element chip 9 emits light having the same or different wavelength as the light emitted from the semiconductor light emitting element chip 9. The target light emission color can be obtained by emitting light, and subtle color control can be performed.

  Therefore, it is possible to obtain emitted light of any wavelength with a small number of parts and to reduce the size of the light source device 2.

  The light shielding body 12 is formed by printing or applying black ink or the like on the surface of a transparent sheet-like base material such as polyethylene terephthalate (PET), acrylic resin (PMMA), or polycarbonate (PC). An acrylic adhesive is applied to the back surface. Moreover, the light shielding body 12 may not be transparent (for example, white), and can prevent the base material itself from firing and transmitting light. Further, the light shield 12 is provided on the entire upper portion of the light source device 2 or on the entire upper portion of the surrounding wall 5 including the surrounding wall 5 of the light source device 2.

  The reflector 13 is made by press molding or the like of a thin metal plate having excellent reflectivity such as a metal such as aluminum or stainless steel. The reflector 13 is made of a sheet in which a white material such as titanium oxide is mixed into a thermoplastic resin, or a metal film such as aluminum is deposited on the thermoplastic resin, or a metal foil is laminated. . Further, the reflector 13 is provided below the back surface portion 10e of the light guide plate 10 (10a, 10b), and the light leaked from the light guide plate 10 (10a, 10b) or the like is returned to the light guide plate 10 (10a, 10b) again. .

  The case 11 is made of an insulating material such as a modified polyamide, polybutylene terephthalate, a liquid crystal polymer made of nylon 46, aromatic polyester, or the like, and improves light reflectivity and light shielding properties for use in place of the substrate 3. In order to obtain the above, a mixture of white powder such as titanium oxide may be used.

  Further, the case 11 may be a thin metal plate or the like having excellent reflectivity such as aluminum or stainless steel. The reflector 13 is placed on the bottom or is made of a thin metal plate having excellent reflectivity. Alternatively, the case 11 may be used directly.

  As described above, the light source device 2 places the crystal substrate side such as the epi substrate of the semiconductor light-emitting element chip 9 on the substrate 3 provided with various patterns provided on a thin film material such as a polyimide film. Since the emitting portion 7 having the chip emitting surface as one of the four side surfaces 9c with the perpendicular direction as the side surface 9c direction is provided, the thickness with respect to the upper emitting direction (vertical direction of the substrate) can be reduced. The thickness of the entire device using the light source device 2 can be reduced, and the size and weight can be reduced.

  Further, since the light source device 2 provides the side wall 9c other than the emitting portion 7 of the chip emitting surface with the resin so as to surround the semiconductor light emitting element chip 9 on the substrate 3, the side surface of the chip emitting surface other than the emitting portion 7 is provided. The emission in the 9c direction can be shielded, and the efficiency of the emitted light from the emission part 7 can be improved.

  Further, in the light source device 2, the semiconductor light emitting element chip 9 is filled with the transparent resin 14, the semiconductor light emitting element chip 9 and the like are sealed, and the reflector 13 and the light shielding body 12 and the like are further provided on the upper part to provide the semiconductor light emitting element chip 9. The light emitted from the chip emission surface 7 is emitted only from the emission part 7 of the chip emission surface provided in the direction of the side surface 9c of the semiconductor light emitting element chip 9, and the efficiency of the emission light from the chip emission surface 9c can be improved.

  Further, by filling the transparent resin 14 or the like, the semiconductor light emitting element chip 9 is more strongly fixed, and the emitted light from the semiconductor light emitting element chip 9 is not exposed to the air layer and is not attenuated from the emitting portion 7. Exit.

  In addition, the flat illumination device 1 is configured so that the emission portion 7 of the light source device 2 in which the light source device 2 is independently created as described above and the incident end surface portion 8 (concave portion 8a) of the light guide plate 10 (10a) face each other. The transparent resin 14 is filled in the space between the incident end surface portion 8 (recessed portion 8a) and the surrounding wall 5 in a state where the emitting portion 7 and the incident end surface portion 8 (recessed portion 8a) are in contact with each other. The semiconductor light emitting device chip in a state where the light guide plate 10 (10a) and the light source device 2 not forming the surrounding wall 5 are in contact with each other so that the end surface portion 8 (recess 8a) and the emission portion 7 of the chip emission surface 9c face each other. A surrounding wall 5 including a side surface 9c other than the chip emitting surface 9c (outgoing portion 7) is provided by a resin having reflectivity and light shielding properties so as to surround the substrate 9, and at the same time, the inside of the surrounding wall 5 is filled with a transparent resin 14 to emit light from the semiconductor The element chip 9 is sealed and light is transmitted by the transparent resin 14. The device 2 and the light guide plate 10 may be bonded connection. In this case, the transparent resin for providing the surrounding wall 5 and the filling of the transparent resin into the inside of the surrounding wall 5 and the filling of the transparent resin for sealing the semiconductor light emitting element chip 9 are performed simultaneously by injection or a cylinder.

  As described above, the flat illumination device 1 includes the light guide plate 10 (10a) so that the emission portion 7 of the chip emission surface 9c of the light source device 2 and the incident end surface portion 8 (concave portion 8a) of the light guide plate 10 (10a) face each other. In a state where the light source device 2 is in contact with the light source device 2, the space between the incident end surface portion 8 (recessed portion 8 a) and the surrounding wall 5 is filled with the transparent resin 14 to seal the semiconductor light emitting element chip 9 and the light source device 2 with the transparent resin 14. And the light guide plate 10 (10a) are bonded to each other, and the emitted light from the emission portion 7 of the chip emission surface 9c is directly guided into the light guide plate 10 (10a). Therefore, the light guide plate 10 (10a) and the light source device 2 are connected to each other. Since there is no air layer between them, there is no refraction that causes loss in the air layer, and reflection and absorption due to light deflection and diffusion can be prevented and the light source device 2 and the light guide plate 10 (10a) are efficient. And can be adhesively connected.

  Further, similarly, when the light source device 2 is created, the surrounding wall 5 is not formed, and the semiconductor light emitting element chip 9 is mounted on the substrate 3 (but after die bonding or wire bonding), and the chip emission surface of the light source device 2 In the state where the light guide plate 10 (10a) and the light source device 2 are in contact with each other so that the light emitting portion 7 of 9c and the incident end face portion 8 (concave portion 8a) of the light guide plate 10 (10a) face each other, The method of filling the inside of the surrounding wall 5 with the transparent resin 14 to seal the semiconductor light emitting element chip 9 and bonding and connecting the light source device 2 and the light guide plate 10 (10a) with the transparent resin 14 is the same as described above. In addition to the above, this method can improve productivity and reliability.

  Further, in the flat illumination device 1, the light emitting device chip 9 is mounted on the substrate 3 without providing the surrounding wall 5 in the light source device 2 (however, after die bonding or wire bonding treatment), as shown in FIG. ) And the light exit plate 10b provided with the light entrance plate 8b having the hole 8d penetrating the light exit surface 10d and the opposite light exit surface 10e as shown in FIG.

  Further, the flat illumination device 1 inserts the semiconductor light emitting element chip 9 into the hole 8d of the light guide plate 10b, and seals the semiconductor light emitting element chip 9 with the light guide plate 10b and the light source device 2 in contact with each other. The hole portion 8d is filled with a transparent resin 14, the light source device 2 and the incident surface portion 8b of the light guide plate 10b are adhesively connected with the transparent resin 14, and there is no air layer between the light guide plate 10b and the light source device 2, and the chip The light emitted from the light emitting portion 7 of the light emission surface 9c can be directly guided into the light guide plate 10b, and all the light emitted from the chip light emission surface 9c of the light source device 2 can be guided into the light guide plate 10b. There is no refraction due to (absorption) or air layer, reflection of light due to deflection or diffusion can be prevented, and the light can be efficiently guided into the light guide plate 10b.

  Moreover, since all the four side surfaces 9c of the semiconductor light emitting element chip 9 are the emitting portions 7, the luminance efficiency is good and the thickness can be reduced, so that the thickness of the light guide plate can be reduced, and the thickness of the entire flat illumination device 1 is reduced. And size can be reduced.

  Furthermore, the semiconductor light emitting element chip 9 of the light source device 2 can be simultaneously sealed with the transparent resin 14, and the light source device 2 and the light guide plate 10b can be bonded and connected at the same time, thereby improving productivity and reliability. Can be improved and miniaturized.

  As described above, the present invention uses the side surfaces in the four directions of the semiconductor light emitting element chip, uses the light emitted from these side surfaces as an output part, and surrounds the semiconductor light emitting element chip with a resin surrounding wall other than the output part. A thin light source device provided.

  Further, the light source device using the four side surfaces of the semiconductor light emitting element chip and the incident end surface portion of the light guide plate using the light source device are brought into contact with each other in the space between the incident end surface portion and the surrounding wall. Fills the transparent resin and seals the semiconductor light-emitting element chip, and adhesively connects the light source device and the light guide plate with the transparent resin to guide the light emitted from the semiconductor light-emitting element chip directly into the light guide plate and make the best use of the thin light. The flat illumination device.

  Suitable for light sources for backlights of small mobile products, light sources for all small and thin electrical products, etc. Especially, it is a semiconductor light-emitting element chip, so it has a wide operating temperature range and is fully compatible with usage environments such as car navigation systems. It is possible to provide a light source device and a small mobile product flat illumination device.

It is a disassembled perspective view which shows an example of the plane illuminating device containing the light source device which concerns on this invention. It is a perspective view which shows an example of the light source device which concerns on this invention. (A)-(c) It is the top view, front view, and side view of the light source device of FIG. 1 is a perspective view of a semiconductor light emitting element chip used in a light source device according to the present invention. (A)-(c) It is a top view which shows each example of the light source device which concerns on this invention. (A)-(c) It is a top view which shows each example of the light source device which concerns on this invention. (A)-(c) It is a perspective view which shows each example of the light-guide plate used for the planar illuminating device which concerns on this invention. It is a partial expanded sectional view of the plane illuminating device which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Planar illumination apparatus 2 Light source device 3 Board | substrate 3a Front surface 3b Back surface 3c Convex part 4 Wiring pattern 4b Terminal pattern 5 Enclosure 5a Rear wall part 5b Side edge part 5c Wall edge 6 Opening part 7 Output | radiation part 8 Incident end surface part 8a (Incoming end surface part ) Concave portion 8b Incident surface portion 8c Side surface portion 8d Hole shape 8e Anti-incident end surface portion 9, 9b Semiconductor light emitting element chip, crystal substrate 9a Upper surface 9c Side surface, chip emitting surface 9d Light emitting layer 9e Bottom portion 9-R Red light emitting LED
9-G Green LED
9-B Blue LED
DESCRIPTION OF SYMBOLS 10, 10a, 10b Light-guide plate 10d Outgoing surface part 10e Anti-outgoing surface part 11 Case 12 Light-shielding body 13 Reflector 14 Transparent resin L Output light (alpha) Critical angle (gamma) Refraction angle n Refractive index

Claims (8)

A crystal substrate side such as an epi substrate of a semiconductor light emitting element chip is placed on the substrate, and any one of the four side surfaces of the semiconductor light emitting element chip is defined as a chip emitting surface when the right angle direction of the crystal substrate is a side surface direction. And a light source device. 2. The light source device according to claim 1, wherein a side wall other than the chip emission surface is provided with a resin so as to surround the semiconductor light emitting element chip on the substrate. The light source device according to claim 1, wherein a reflector or a light-shielding body is provided on an upper portion where the semiconductor light-emitting element chip is filled and sealed with a transparent resin. A crystal substrate side such as an epi substrate of a semiconductor light emitting element chip is placed on the substrate, and any one of the four side surfaces of the semiconductor light emitting element chip when a right angle direction of the crystal substrate is a side surface direction is defined as a chip emission surface. A light source device in which a side wall other than the chip emission surface is provided with a resin so as to surround the semiconductor light emitting element chip; and
An incident end face that guides light from the light source device, an exit face that emits light to the outside, a counter-exit face that is located on the opposite side of the exit face, and the entrance end face, the exit face, and the counter exit face. Comprising at least a light guide plate composed of side surfaces to be connected,
The semiconductor light emitting element is filled with a transparent resin in a space between the incident end face portion and the surrounding wall in a state where the light guide plate and the light source device are in contact with each other so that the incident end face portion and the chip exit surface face each other. A flat illumination device characterized in that the chip is sealed and the light source device and the light guide plate are adhesively connected with the transparent resin, and the emitted light from the chip emission surface is guided directly into the light guide plate. A crystal substrate side such as an epi substrate of a semiconductor light emitting element chip is placed on the substrate, and any one of the four side surfaces of the semiconductor light emitting element chip is defined as a chip emitting surface when the right angle direction of the crystal substrate is a side surface direction. A light source device,
An incident end face that guides light from the light source device, an exit face that emits light to the outside, a counter-exit face that is located on the opposite side of the exit face, and the entrance end face, the exit face, and the counter exit face. Comprising at least a light guide plate composed of side surfaces to be connected,
Other than the chip emission surface by a resin having reflectivity so as to surround the semiconductor light emitting device chip in a state where the light guide plate and the light source device are in contact with each other so that the incident end face portion faces the chip emission surface. And a transparent resin is filled inside the surrounding wall, the semiconductor light emitting element chip is sealed, and the light source device and the light guide plate are bonded and connected with the transparent resin. A flat illumination device, wherein light emitted from an emission surface is guided directly into the light guide plate. A light source device in which a crystal substrate side such as an epi substrate of a semiconductor light emitting element chip is placed on the substrate, and the four side surfaces of the semiconductor light emitting element chip are chip emitting surfaces when a right angle direction of the crystal substrate is a side surface direction. When,
An incident surface portion that guides light from the light source device, an exit surface portion that emits light to the outside, a counter-exit surface portion that is located on the opposite side of the exit surface portion, and a side surface portion that is connected to the exit surface portion and the counter-exit surface portion. And comprising at least a light guide plate provided with a hole-shaped incident surface portion penetrating the exit surface portion and the opposite exit surface portion,
The semiconductor light emitting element chip of the light source device is inserted into the hole-shaped incident surface portion so as to overlap the light guide plate on the substrate of the light source device, and the light guide plate and the light source device are in contact with each other. The hole-shaped portion is filled with a transparent resin so as to seal the semiconductor light emitting element chip, the light source device and the incident surface portion of the light guide plate are bonded and connected with the transparent resin, and the emitted light from the chip emitting surface A flat illumination device characterized by guiding the light directly into the light guide plate. 6. The flat illumination device according to claim 3, wherein the light source device is provided with a reflector or a light shield on an upper portion of the semiconductor light emitting element chip filled and sealed with a transparent resin. 7. The transparent resin includes a fluorescent material and emits light having the same or different wavelength as the light emitted from the semiconductor light emitting element chip by the light emitted from the semiconductor light emitting element chip. A flat illumination device according to claim 1.

Images