JP2007248093A - Film evaluating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a practical infrared absorption spectrum of a measured film even when an active substrate forming the measured film is a glass substrate of large infrared absorption. <P>SOLUTION: An infrared reflection layer (support film) 31 is formed on the upper surface of an active substrate 1, a gate insulating film 13 formed on the upper surface of the infrared reflection layer (support film) 31 is used as the measured film 32, and an opening 33 for measurement is formed on the measured film 32. Infrared rays are radiated to the infrared reflection layer (support film) 31 exposed via the opening 33 for measurement, the infrared rays reflected by it are detected, and infrared absorption spectrum for a support film is obtained based on the detection result. Infrared rays are radiated to the measured film 32, the infrared rays that transmit through the measured film 32 and are reflected by the infrared reflection layer 31 are detected, and infrared absorption spectrum for the measured film is obtained based on the detection result. By subtracting the infrared absorption spectrum for the support film from the infrared absorption spectrum for the measured film, Net infrared absorption spectrum of the measured film 32 is obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film evaluation method for evaluating the state of a film by measuring an infrared absorption spectrum of the film.

  The conventional film evaluation method for evaluating the state of a film by measuring the infrared absorption spectrum of the film includes a plurality of standard films with different thicknesses formed on the substrate with the same material as the film to be measured. The film to be measured formed on the substrate by measuring the external absorption spectrum, specifying the wave number of the absorption peak relating to the surface independent of the film thickness of each absorption peak of the infrared absorption spectrum of each standard film as background information There is a method in which the surface state of the film to be measured is evaluated by measuring the infrared absorption spectrum of the film and subtracting the background information from the film information to be measured (see, for example, Patent Document 1). .

Japanese Patent Laid-Open No. 9-61242

  However, in the conventional film evaluation method, when the substrate on which the film to be measured is formed is a substrate that absorbs a large amount of infrared rays, such as a glass substrate, the film to be measured has a large absorption by the substrate. Infrared reflection on the surface of the film becomes weak, and there is a problem that the infrared absorption spectrum of the obtained film to be measured is not practical.

  Therefore, the present invention provides a film capable of obtaining a practical infrared absorption spectrum of a film to be measured even if the substrate for forming the film to be measured is a substrate having a large infrared absorption such as a glass substrate. The purpose is to provide an evaluation method.

In order to achieve the above object, the invention according to claim 1 irradiates the infrared reflecting layer formed on the substrate with infrared rays, detects the infrared rays reflected by the infrared rays, and detects the infrared rays reflected from the detection result. A step of obtaining an outer absorption spectrum, irradiating a film to be measured formed on a part of the infrared reflection layer with infrared rays, detecting infrared rays transmitted through the film to be measured and reflected by the infrared reflection layer; A step of obtaining an infrared absorption spectrum for the film to be measured from the detection result, and a net infrared absorption spectrum of the film to be measured by subtracting the infrared absorption spectrum for the infrared reflection layer from the infrared absorption spectrum for the film to be measured And obtaining the step.
The invention described in claim 4 is a step of preparing a film to be measured formed on a substrate transparent to infrared rays, and irradiates infrared rays on the substrate transparent to infrared rays and detects infrared rays transmitted therethrough. A step of obtaining an infrared absorption spectrum for a substrate transparent to infrared rays from the detection result, and irradiating the film to be measured formed on the substrate transparent to the infrared rays with infrared rays, Infrared light transmitted through a substrate transparent to the infrared light is detected, and from this detection result, an infrared absorption spectrum for the film to be measured is obtained; from the infrared absorption spectrum for the film to be measured, And subtracting the infrared absorption spectrum for the substrate to obtain a net infrared absorption spectrum of the film to be measured.
The invention according to claim 8 is the step of directly detecting the infrared rays generated in the infrared generation layer formed on the substrate, obtaining an infrared absorption spectrum for the infrared generation layer from the detection result, and the generation in the infrared generation layer The transmitted infrared light passes through a film to be measured formed on a part of the infrared generation layer, detects the transmitted infrared light, and obtains an infrared absorption spectrum for the film to be measured from the detection result; And subtracting the infrared absorption spectrum for the infrared generation layer from the infrared absorption spectrum for the film to obtain a net infrared absorption spectrum of the film to be measured.
The invention according to claim 10 irradiates the infrared detection layer formed on the substrate with infrared rays, detects the infrared rays irradiated to the infrared detection layer with the infrared detection layer, and uses the detection result for the infrared detection layer. A step of obtaining an infrared absorption spectrum, irradiating a film to be measured formed on a part of the infrared detection layer with infrared rays, and detecting the infrared rays transmitted through the film to be measured with the infrared detection layer, and the detection result Obtaining an infrared absorption spectrum for the film to be measured, and obtaining a net infrared absorption spectrum of the film to be measured by subtracting the infrared absorption spectrum for the infrared detection layer from the infrared absorption spectrum for the film to be measured It is characterized by having.

According to the first aspect of the present invention, since the film to be measured is formed on a part of the infrared reflecting layer formed on the substrate, the substrate for forming the film to be measured is a glass substrate or the like. Even if it is a board | substrate with a large infrared absorption, since it reflects in an infrared reflective layer, the practical infrared absorption spectrum of a to-be-measured film can be obtained, without receiving the influence of a board | substrate.
According to the invention described in claim 4, since the film to be measured is prepared on a substrate transparent to infrared rays, the substrate for forming the film to be measured is infrared rays such as a glass substrate. Even if the substrate absorbs a large amount of light, measurement is performed on a substrate transparent to infrared rays, so that a practical infrared absorption spectrum of the film to be measured can be obtained without being affected by the substrate.
According to the invention described in claim 8, since the film to be measured is formed on a part of the infrared ray generation layer formed on the substrate, the substrate for forming the film to be measured is a glass substrate or the like. Even if the substrate absorbs a large amount of infrared rays, a practical infrared absorption spectrum of the film to be measured can be obtained without being affected by the substrate since it is generated in the infrared generation layer.
According to the invention described in claim 10, since the film to be measured is formed on a part of the infrared detection layer formed on the substrate, the substrate for forming the film to be measured is a glass substrate or the like. Even if the substrate absorbs a large amount of infrared rays, a practical infrared absorption spectrum of the film to be measured can be obtained without being affected by the substrate because it is detected by the infrared detection layer.

(First embodiment)
FIG. 1 shows a plan view of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the first embodiment of the present invention. This liquid crystal display panel is an active matrix type provided with a thin film transistor as a switching element, and an active substrate 1 made of a glass substrate and a counter substrate 2 made of a glass substrate in the same manner as a sealing material (not shown). The liquid crystal (not shown) is sealed between the substrates 1 and 2 inside the sealing material. In this case, two adjacent sides of the active substrate 1 protrude from the counter substrate 2, and a liquid crystal driving semiconductor chip 3 is mounted on the upper surface of these protruding portions 1a.

  Next, FIG. 2 shows an enlarged plan view of a portion A (measured film 32 portion) of FIG. 1, and FIG. 3 is a sectional view taken along line III-III of FIG. FIG. First, the thin film transistor 4 will be described. A gate electrode 11 made of chromium or the like and a scanning line 12 connected to the gate electrode 11 are provided at predetermined locations on the upper surface of the active substrate 1.

  A gate insulating film 13 made of silicon nitride is provided on the upper surface of the active substrate 1 including the gate electrode 11 and the scanning line 12. A semiconductor thin film 14 made of intrinsic amorphous silicon is provided at a predetermined position on the upper surface of the gate insulating film 13 on the gate electrode 11. A channel protective film 15 made of silicon nitride is provided at a predetermined position on the upper surface of the semiconductor thin film 14 on the gate electrode 11.

  Ohmic contact layers 16 and 17 made of n-type amorphous silicon are provided on both sides of the upper surface of the channel protective film 15 and on the upper surface of the semiconductor thin film 14 on both sides thereof. A source electrode 18 made of chromium or the like is provided on the upper surface of one ohmic contact layer 16. A drain electrode 19 made of chromium or the like and a data line 20 connected to the drain electrode 19 are provided at predetermined positions on the upper surface of the other ohmic contact layer 16 and the upper surface of the gate insulating film 13.

  The gate electrode 11, the gate insulating film 13, the semiconductor thin film 14, the channel protective film 15, the ohmic contact layers 16 and 17, the source electrode 18 and the drain electrode 19 constitute an inverted staggered (bottom gate) thin film transistor 4. Yes.

  An overcoat film 21 made of silicon nitride is provided on the upper surface of the gate insulating film 13 including the thin film transistor 4 and the data line 20. A contact hole 22 is provided in the overcoat film 21 in a portion corresponding to a predetermined portion of the source electrode 18. A pixel electrode 23 made of a transparent conductive material such as ITO is connected to the source electrode 18 through a contact hole 22 at a predetermined location on the upper surface of the overcoat film 21.

  Next, the portion of the film to be measured 32 will be described with reference to FIGS. A planar rectangular infrared reflection layer (support film) 31 made of chromium or the like, which is a metal material that reflects infrared rays, is provided at a predetermined location on the upper surface of the protruding portion 1 a of the active substrate 1. A gate insulating film 13 is provided on the upper surface of the protruding portion 1 a of the active substrate 1 including the infrared reflective layer 31.

  In this case, the gate insulating film 13 provided on the upper surface of the infrared reflective layer 31 is a film to be measured 32. The measurement target film 32 in the portion corresponding to the central portion of the right half in FIG. 2 of the infrared reflection layer 31 is provided with a planar square measurement opening 33. The measured film 32 and the measurement opening 33 are exposed through the opening 34 provided in the overcoat film 21.

  Here, an example of the size of the portion of the film to be measured 32 will be described. The measurement area of a micro-infrared spectrometer (not shown) used in the film evaluation method in this case is 30 μm □ to 100 μm □, and the larger the measurement area, the better the signal versus background (S / N). Therefore, the size of the measurement opening 33 of the measured film 32 is 100 μm □, and the size of the measured film 32 adjacent to the left side of the measurement opening 33 in FIG. 2 is slightly larger than 100 μm □. .

  When evaluating the chemical state of the film to be measured 32 (that is, the gate insulating film 13), first, in order to measure the infrared reflection layer (support film) 31, the light was emitted from the infrared light source of the microinfrared spectrometer. When infrared rays are applied to the infrared reflection layer (support film) 31 through the measurement opening 33 of the film 32 to be measured, the infrared rays reflected thereby are detected by an infrared detector, and the support film is detected from the detection result. An infrared absorption spectrum is obtained.

  Next, when the infrared ray emitted from the infrared light source of the microscopic infrared spectroscopic device is irradiated onto the film to be measured 32, the infrared ray transmitted through the film to be measured 32 is reflected by the infrared reflecting layer 31, and the reflected infrared ray is reflected. The film to be measured 32 passes through and is detected by an infrared detector, and an infrared absorption spectrum for the film to be measured is obtained from the detection result.

  Then, when the infrared absorption spectrum for the support film is subtracted from the infrared absorption spectrum for the film to be measured, a net infrared absorption spectrum of the film to be measured 32 is obtained. From this net infrared absorption spectrum, it is possible to evaluate the chemical state of the film 32 to be measured, that is, the gate insulating film 13 made of silicon nitride, that is, whether or not the gate insulating film 13 is formed as designed. You can investigate.

  As described above, in this film evaluation method, since the film to be measured 32 made of silicon nitride is formed on a part of the upper surface of the infrared reflecting layer 31 formed on the upper surface of the protruding portion 1a of the active substrate 1, the film to be measured is measured. Even if the active substrate 1 for forming the film 32 is a glass substrate having a large infrared absorption, a practical net infrared absorption spectrum of the film to be measured 32 can be obtained.

  Next, an example of a manufacturing method of the liquid crystal display panel shown in FIG. 3 will be described. First, as shown in FIG. 4, a metal film made of chromium or the like formed by sputtering at a predetermined position on the upper surface of the active substrate 1 is patterned by photolithography to thereby obtain a gate electrode 11 and a scanning line 12. And the infrared reflective layer 31 is formed.

  Next, as shown in FIG. 5, the gate insulating film 13 made of silicon nitride and the intrinsic amorphous silicon film 51 are formed on the upper surface of the active substrate 1 including the gate electrode 11, the scanning line 12, and the infrared reflecting layer 31 by plasma CVD. Then, a silicon nitride film 52 is continuously formed. Next, the channel protection film 15 is formed by patterning the silicon nitride film 52 by photolithography.

  Next, as shown in FIG. 6, an n-type amorphous silicon film 53 is formed on the upper surface of the intrinsic amorphous silicon film 51 including the channel protective film 15 by plasma CVD. Next, when the n-type amorphous silicon film 53 and the intrinsic amorphous silicon film 51 are successively patterned by photolithography, ohmic contact layers 16 and 17 and the semiconductor thin film 14 are formed as shown in FIG.

  Next, as shown in FIG. 8, a metal film made of chromium or the like formed by sputtering on the upper surfaces of the ohmic contact layers 16 and 17 and the upper surface of the gate insulating film 13 is patterned by photolithography. Thus, the source electrode 18, the drain electrode 19, and the data line 20 are formed. Next, as shown in FIG. 9, a measurement opening 33 is formed in the gate insulating film 13 (that is, the film to be measured 32) in a portion corresponding to a predetermined portion of the infrared reflective layer 31 by photolithography.

  Next, as shown in FIG. 10, the silicon nitride film formed by the plasma CVD method is patterned on the upper surface of the gate insulating film 13 including the thin film transistor 4 and the like by the photolithography method, so that the contact hole 22 and the opening are formed. An overcoat film 21 having 34 is formed.

  Next, as shown in FIG. 3, the pixel electrode 23 is formed by patterning a transparent conductive film made of ITO or the like formed by sputtering at a predetermined position on the upper surface of the overcoat film 21 by photolithography. It is formed by connecting to the source electrode 18 through the contact hole 22. Thus, the liquid crystal display panel shown in FIG. 3 is obtained.

(Second Embodiment)
FIG. 11 shows a plan view similar to FIG. 2 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the second embodiment of the present invention, and FIG. 12 shows XII-XII in FIG. A cross-sectional view along the line and a cross-sectional view of a portion of the thin film transistor 4 on the active substrate 1 are shown. This liquid crystal display panel is different from the liquid crystal display panel shown in FIGS. 2 and 3 in the gate insulating film 13 in a portion corresponding to a predetermined location on the upper surface of the protruding portion 1a of the active substrate 1 including the infrared reflection layer 31. An opening 35 is provided, and a film to be measured 36 made of intrinsic amorphous silicon is provided on the upper surface of the protrusion 1 a of the active substrate 1 including the infrared reflection layer 31 in the opening 35.

  In this case, the measurement target film 36 in the portion corresponding to the central portion of the right half in FIG. 11 of the infrared reflecting layer 31 is provided with a planar square measurement opening 37. A part of the film to be measured 36 and a part of the measurement opening 37 are exposed through the opening 34 of the overcoat film 21. The data line 20 in this case has a three-layer structure of an intrinsic amorphous silicon film 20a, an n-type amorphous silicon film 20b, and a metal film 20c made of chromium or the like in order from the bottom.

  As will be described later, when the chemical state of the film to be measured 36 formed simultaneously with the semiconductor thin film 14 made of intrinsic amorphous silicon is to be evaluated, first, the microscopic red is used to measure the infrared reflecting layer (support film) 31. When infrared rays emitted from the infrared light source of the outer spectroscopic device are irradiated to the infrared reflection layer (support film) 31 through the measurement opening 37 of the film to be measured 36, the infrared rays reflected thereby are reflected by the infrared detector. From this detection result, an infrared absorption spectrum for the support film is obtained.

  Next, when the infrared ray emitted from the infrared light source of the microscopic infrared spectrometer is irradiated onto the film to be measured 36, the infrared ray that has passed through the film to be measured 36 is reflected by the infrared reflecting layer 31, and the reflected infrared ray is reflected. The film to be measured 36 passes through and is detected by an infrared detector, and an infrared absorption spectrum for the film to be measured is obtained from the detection result.

  Then, by subtracting the infrared absorption spectrum for the supporting film from the infrared absorption spectrum for the measured film, a net infrared absorption spectrum of the measured film 36 is obtained. From this net infrared absorption spectrum, the chemical state of the film to be measured 36, that is, the semiconductor thin film 14 made of intrinsic amorphous silicon can be evaluated, that is, whether or not the semiconductor thin film 14 is formed as designed. be able to.

  As described above, in this film evaluation method, the film to be measured 36 made of intrinsic amorphous silicon is formed on a part of the upper surface of the infrared reflecting layer 31 formed on the upper surface of the protruding portion 1a of the active substrate 1. Even if the active substrate 1 for forming the measurement film 36 is a glass substrate that absorbs a large amount of infrared light, a practical net infrared absorption spectrum of the film to be measured 36 can be obtained.

  Next, an example of a method for manufacturing the liquid crystal display panel will be described. First, after the process shown in FIG. 4, as shown in FIG. 13, a silicon nitride film formed by plasma CVD is formed on the upper surface of the active substrate 1 including the gate electrode 11 and the scanning line 12 by photolithography. By patterning, the gate insulating film 13 having the opening 35 is formed.

  Next, as shown in FIG. 14, the upper surface of the gate insulating film 13 and the upper surface of the protruding portion 1a of the active substrate 1 including the infrared reflecting layer 31 in the opening 35 of the gate insulating film 13 are intrinsically formed by plasma CVD. An amorphous silicon film 51 and a silicon nitride film 52 are continuously formed. Next, the channel protection film 15 is formed by patterning the silicon nitride film 52 by photolithography.

  Next, as shown in FIG. 15, a hard mask 54 having substantially the same plane size as the opening 35 of the gate insulating film 13 is disposed on the upper surface of the intrinsic amorphous silicon film 51 in the opening 35 of the gate insulating film 13. Next, an n-type amorphous silicon film 53 is formed on the upper surface of the intrinsic amorphous silicon film 51 including the channel protective film 15 and the upper surface of the hard mask 54 by plasma CVD. Next, a metal film 55 made of chromium or the like is formed on the upper surface of the n-type amorphous silicon film 53 by sputtering.

  Next, the hard mask 54 is removed together with the n-type amorphous silicon film 53 and the metal film 55 formed thereon. Next, when the metal film 55, the n-type amorphous silicon film 53, and the intrinsic amorphous silicon film 51 are successively patterned by photolithography, as shown in FIG. 16, the source electrode 18, the drain electrode 19, the data line 20, the ohmic contact, and the like. A film to be measured 36 having contact layers 16, 17, the semiconductor thin film 14, and a measurement opening 37 is formed.

  In this case, the data line 20 has a three-layer structure of an intrinsic amorphous silicon film 20a, an n-type amorphous silicon film 20b, and a metal film 20c in order from the bottom. Thereafter, through the same process as described above, the liquid crystal display panel shown in FIG. 12 is obtained.

(Third embodiment)
FIG. 17 shows a cross-sectional view similar to FIG. 12 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the third embodiment of the present invention. This liquid crystal display panel is different from the liquid crystal display panel shown in FIG. 12 in that n is provided at a predetermined position on the upper surface of the protruding portion 1a of the active substrate 1 including the infrared reflecting layer 31 in the opening 35 of the gate insulating film 13. This is that a film to be measured 38 having a measurement opening 39 made of type amorphous silicon is provided.

  As will be described later, when the chemical state of the film 38 to be measured formed simultaneously with the ohmic contact layers 16 and 17 made of n-type amorphous silicon is evaluated, first, the infrared reflecting layer (support film) 31 is measured. Therefore, when the infrared ray emitted from the infrared light source of the microscopic infrared spectroscopic device is irradiated to the infrared reflecting layer 31 (support film) through the measurement opening 39 of the film to be measured 38, the infrared ray reflected thereby is reflected. It is detected by an infrared detector, and an infrared absorption spectrum for the support film is obtained from the detection result.

  Next, when the infrared ray emitted from the infrared light source of the microscopic infrared spectroscopic apparatus is irradiated onto the film to be measured 38, the infrared ray transmitted through the film to be measured 38 is reflected by the infrared reflecting layer 31, and the reflected infrared ray is reflected. The film to be measured 38 passes through and is detected by an infrared detector, and an infrared absorption spectrum for the film to be measured is obtained from the detection result.

  Then, when the support film infrared absorption spectrum is subtracted from the measured film infrared absorption spectrum, a net infrared absorption spectrum of the measured film 38 is obtained. From this net infrared absorption spectrum, the chemical state of the film 38 to be measured, that is, the ohmic contact layers 16 and 17 made of n-type amorphous silicon, can be evaluated. That is, the ohmic contact layers 16 and 17 are formed as designed. You can check whether or not it has been.

  Thus, in this film evaluation method, since the film to be measured 38 made of n-type amorphous silicon is formed on a part of the upper surface of the infrared reflecting layer 31 formed on the upper surface of the protruding portion 1a of the active substrate 1, Even if the active substrate 1 for forming the film to be measured 38 is a glass substrate having a large infrared absorption, a practical net infrared absorption spectrum of the film to be measured 38 can be obtained.

  Next, an example of a method for manufacturing the liquid crystal display panel will be described. First, after the process shown in FIG. 13, as shown in FIG. 18, the upper surface of the infrared reflective layer 31 in the opening 35 of the gate insulating film 13 has the same plane size as the opening 35 of the gate insulating film 13. A hard mask 56 is disposed. Next, an intrinsic amorphous silicon film 51 and a silicon nitride film 52 are successively formed on the upper surface of the gate insulating film 13 and the upper surface of the hard mask 56 by plasma CVD.

  Next, the hard mask 56 is removed together with the intrinsic amorphous silicon film 51 and the silicon nitride film 52 formed thereon. Next, when the silicon nitride film 52 is patterned by photolithography, the channel protective film 15 is formed as shown in FIG. In this state, the intrinsic amorphous silicon film 51 is formed only on the upper surface of the gate insulating film 13.

  Next, as shown in FIG. 20, on the upper surface of the intrinsic amorphous silicon film 51 including the channel protective film 15 and the upper surface of the protruding portion 1a of the active substrate 1 including the infrared reflecting layer 31 in the opening 35 of the gate insulating film 13. Then, an n-type amorphous silicon film 53 is formed by plasma CVD.

  Next, a hard mask 57 having substantially the same plane size as the opening 35 of the gate insulating film 13 is disposed on the upper surface of the n-type amorphous silicon film 53 in the opening 35 of the gate insulating film 13. Next, a metal film 55 made of chromium or the like is formed on the upper surface of the n-type amorphous silicon film 53 and the upper surface of the hard mask 57 on the intrinsic amorphous silicon film 51 by sputtering.

  Next, the hard mask 57 is removed together with the metal film 55 formed thereon. Next, when the metal film 55, the n-type amorphous silicon film 53, and the intrinsic amorphous silicon film 51 are successively patterned by a photolithography method, as shown in FIG. 21, the source electrode 18, the drain electrode 19, the data line 20, the ohmic contact, and the like. A film to be measured 38 having contact layers 16, 17, semiconductor thin film 14, and measurement opening 39 is formed.

  Also in this case, the data line 20 has a three-layer structure of an intrinsic amorphous silicon film 20a, an n-type amorphous silicon film 20b, and a metal film 20c in order from the bottom. Thereafter, through the same steps as described above, the liquid crystal display panel shown in FIG. 17 is obtained.

(Fourth embodiment)
FIG. 22 shows a plan view similar to FIG. 2 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the fourth embodiment of the present invention, and FIG. 23 shows XXIII-XXIII in FIG. A cross-sectional view along the line and a cross-sectional view of a portion of the thin film transistor 4 on the active substrate 1 are shown. This liquid crystal display panel is different from the liquid crystal display panel shown in FIGS. 2 and 3 in that the size of the infrared reflecting layer 31, the measurement opening 33 of the measured film 32, and the opening 34 of the overcoat film 21 is set in the horizontal direction. The measured film 36 made of intrinsic amorphous silicon and the measured film 38 made of n-type amorphous silicon are provided at predetermined positions on the upper surface of the infrared reflecting layer 31 in the measurement opening 33 of the measured film 32. It is a point.

  That is, on the upper surface of the infrared reflecting layer 31, in order from the left side in FIG. 23, the measured film 32 made of a part of the gate insulating film 13, the measured film 36 made of intrinsic amorphous silicon, and the measured film made of n-type amorphous silicon. A membrane 38 is provided. The upper surface of the infrared reflecting layer 31 on the right side of the film to be measured 38 is exposed through the measurement opening 33 of the film to be measured 32.

  Therefore, in this liquid crystal display panel, the chemical state of the gate insulating film 13 can be evaluated from the net infrared absorption spectrum of the film to be measured 32, and the semiconductor thin film 14 can be determined from the net infrared absorption spectrum of the film to be measured 36. The chemical state of the ohmic contact layers 16 and 17 can be evaluated from the net infrared absorption spectrum of the film 38 to be measured.

  Next, an example of a method for manufacturing the liquid crystal display panel will be described. First, after a process as shown in FIG. 14, as shown in FIG. 24, a gate electrode 11, a scanning line 12, and an infrared reflecting layer 31 are formed at predetermined positions on the upper surface of the active substrate 1, and on that, A gate insulating film 13 having a measurement opening 33 is formed, an intrinsic amorphous silicon film 51 is formed thereon, and a channel protective film 15 is formed at a predetermined position thereon.

  Next, when the intrinsic amorphous silicon film 51 is patterned by photolithography, the semiconductor thin film 14 and the film to be measured 36 are formed as shown in FIG. Next, although not shown, a hard mask is disposed, an n-type amorphous silicon film formed by plasma CVD is patterned by photolithography, and an n-type amorphous silicon film formed thereon is formed. Then, the ohmic contact layers 16 and 17 and the film to be measured 38 are formed as shown in FIG.

  Next, as shown in FIG. 23, when a metal film made of chromium or the like formed by sputtering is patterned by photolithography, a source electrode 18, a drain electrode 19, and a data line 20 are formed. Thereafter, through the same steps as described above, the liquid crystal display panel shown in FIG. 23 is obtained.

(Fifth embodiment)
FIG. 27 shows a sectional view similar to FIG. 3 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the fifth embodiment of the present invention. This liquid crystal display panel is different from the liquid crystal display panel shown in FIG. 3 in that a measurement opening 33 is provided in the gate insulating film 13 in a portion corresponding to the central portion of the infrared reflective layer 31, and the infrared reflective layer 31 of FIG. A measurement opening 41 is provided in the overcoat film 21 in the central portion of the right half and the portion in the vicinity thereof, and the overcoat film 21 provided on the upper surface of the left half in FIG. This is the point that the film 40 is used.

  When evaluating the chemical state of the film to be measured 40 (that is, the overcoat film 21), first, the infrared ray from the infrared light source of the micro-infrared spectrometer is used to measure the infrared reflecting layer (support film) 31. When the infrared reflection layer (support film) 31 is irradiated through the measurement opening 41 of the film to be measured 40, the infrared ray reflected thereby is detected by the infrared detector, and from this detection result, the support film red An external absorption spectrum is obtained.

  Next, when the infrared ray emitted from the infrared light source of the microscopic infrared spectrometer is irradiated onto the film to be measured 40, the infrared ray that has passed through the film to be measured 40 is reflected by the infrared reflecting layer 31, and the reflected infrared ray is The film to be measured 40 passes through and is detected by an infrared detector, and an infrared absorption spectrum for the film to be measured is obtained from the detection result.

  Then, when the support film infrared absorption spectrum is subtracted from the measurement film infrared absorption spectrum, the net infrared absorption spectrum of the measurement film 40 is obtained. From this net infrared absorption spectrum, the chemical state of the film to be measured 40, that is, the overcoat film 21 made of silicon nitride can be evaluated, that is, whether or not the overcoat film 21 is formed as designed. You can investigate. Therefore, in this liquid crystal display panel, the chemical state of the overcoat film 21 can be evaluated from the net infrared absorption spectrum of the film 40 to be measured.

  Next, an example of a method for manufacturing the liquid crystal display panel will be briefly described. In this case, in the step shown in FIG. 7, the measurement opening 33 is formed in the gate insulating film 13 in the portion corresponding to the central portion of the infrared reflecting layer 31, and in the step shown in FIG. When the measurement opening 41 is formed in the overcoat film 21 in the central portion and the portion corresponding to the central portion thereof, the liquid crystal display panel shown in FIG. 27 is obtained.

(Sixth embodiment)
FIG. 28 shows a sectional view similar to FIG. 27 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the sixth embodiment of the present invention. This liquid crystal display panel is different from the liquid crystal display panel shown in FIG. 27 in that an infrared reflection layer 42 is provided at a predetermined position on the upper surface of the gate insulating film 13 on the protruding portion 1 a of the active substrate 1. A measurement opening 41 is provided in the overcoat film 21 in a portion corresponding to the center portion of the right half in FIG. 28, and the overcoat film 21 provided on the upper surface of the left half in FIG. 40.

  When evaluating the chemical state of the film to be measured 40 (that is, the overcoat film 21), first, in order to measure the infrared reflecting layer (support film) 42, the infrared rays emitted from the infrared light source of the micro-infrared spectrometer are used. When the infrared reflection layer (support film) 42 is irradiated through the measurement opening 41 of the film to be measured 40, the infrared ray reflected thereby is detected by an infrared detector, and the red for the support film is detected from the detection result. An external absorption spectrum is obtained.

  Next, when the film to be measured 40 is irradiated with infrared rays emitted from the infrared light source of the micro-infrared spectrometer, the infrared rays that have passed through the film to be measured 40 are reflected by the infrared reflection layer 42, and the reflected infrared rays are reflected on the film. The film to be measured 40 passes through and is detected by an infrared detector, and an infrared absorption spectrum for the film to be measured is obtained from the detection result.

  Then, when the support film infrared absorption spectrum is subtracted from the measurement film infrared absorption spectrum, the net infrared absorption spectrum of the measurement film 40 is obtained. From this net infrared absorption spectrum, the chemical state of the film to be measured 40, that is, the overcoat film 21 made of silicon nitride can be evaluated, that is, whether or not the overcoat film 21 is formed as designed. You can investigate. Therefore, even in this liquid crystal display panel, the chemical state of the overcoat film 21 can be evaluated from the net infrared absorption spectrum of the film 40 to be measured.

  Next, an example of a method for manufacturing the liquid crystal display panel will be briefly described. In this case, when the source electrode 18, the drain electrode 19, and the data line 20 are formed of a metal such as chromium, at the same time, a metal such as chromium is formed at a predetermined position on the upper surface of the gate insulating film 13 on the protruding portion 1 a of the active substrate 1. When the infrared reflective layer 42 made of is formed, a liquid crystal display panel shown in FIG. 28 is obtained.

(Seventh embodiment)
FIG. 29 shows a plan view similar to FIG. 22 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method according to the seventh embodiment of the present invention, and FIG. 30 shows XXX-XXX in FIG. A sectional view along the line is shown. This liquid crystal display panel is different from the liquid crystal display panel shown in FIGS. 22 and 23 in that the size of the infrared reflection layer 31 and the measurement opening 33 of the measured film 32 is increased in the left-right direction, and the overcoat film 21 The size of the opening (in this case, the measurement opening 41) is shortened in the left-right direction, and the overcoat film 21 on the right end of the infrared reflecting layer 31 is used as the film to be measured 40.

  The chemistry of the film to be measured 32 (that is, the gate insulating film 13), the film to be measured 36 (that is, the semiconductor thin film 14), the film to be measured 38 (that is, the ohmic contact layers 16 and 17), and the film 40 to be measured (that is, the overcoat film 21). In the case of evaluating the state, first, in order to measure the infrared reflecting layer (support film) 31, infrared rays emitted from the infrared light source of the microscopic infrared spectroscopic device pass through the measurement opening 41 of the film to be measured 40. When the infrared reflecting layer (support film) 31 is irradiated, the infrared ray reflected thereby is detected by an infrared detector, and an infrared absorption spectrum for the support film is obtained from the detection result.

  Next, when the infrared rays emitted from the infrared light source of the micro-infrared spectrometer are irradiated onto the respective measured films 32, 36, 38, 40, the respective measured films 32, 36, 38, 40 are transmitted. Infrared light is reflected by the infrared reflecting layer 31, and the reflected infrared light passes through the measured films 32, 36, 38, and 40 and is detected by the infrared detector. From the detection result, infrared absorption for the measured film is performed. A spectrum is obtained.

  Then, when the support film infrared absorption spectrum is subtracted from each measured film infrared absorption spectrum, the net infrared absorption spectrum of each measured film 32, 36, 38, 40 is obtained. From this net infrared absorption spectrum, the films to be measured 32, 36, 38, 40, that is, the gate insulating film 13 made of silicon nitride, the semiconductor thin film 14 made of intrinsic amorphous silicon, and the ohmic contact layers 16, 17 made of n-type amorphous silicon. The chemical state of the overcoat film 21 made of silicon nitride can be evaluated, that is, whether the gate insulating film 13, the semiconductor thin film 14, the ohmic contact layers 16, 17 and the overcoat film 21 are formed as designed. You can check whether or not.

  Therefore, in this liquid crystal display panel, the chemical state of the gate insulating film 13 can be evaluated from the net infrared absorption spectrum of the film to be measured 32, and the semiconductor thin film 14 can be determined from the net infrared absorption spectrum of the film to be measured 36. The chemical state of the ohmic contact layers 16 and 17 can be evaluated from the net infrared absorption spectrum of the film 38 to be measured, and the net infrared absorption of the film 40 to be measured can be evaluated. The chemical state of the overcoat film 21 can be evaluated from the spectrum.

(Eighth embodiment)
31 shows a plan view similar to FIG. 22 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the eighth embodiment of the present invention, and FIG. 32 shows XXXII-XXXII in FIG. A cross-sectional view along the line is shown. In this liquid crystal display panel, the difference from the liquid crystal display panel shown in FIGS. 22 and 23 is that a predetermined position on the upper surface of the gate insulating film 13 in the vicinity of the infrared reflective layer 31 including the films to be measured 32, 36, and 38 is The infrared reflective layer 42 including the film to be measured 40 shown in FIG. 28 is provided.

  When evaluating the chemical state of the film to be measured 32 (that is, the gate insulating film 13), the film to be measured 36 (that is, the semiconductor thin film 14), and the film to be measured 38 (that is, the ohmic contact layers 16 and 17), first, infrared reflection is performed. In order to measure the layer (support film) 31, when infrared rays emitted from the infrared light source of the microscopic infrared spectrometer are irradiated to the infrared reflection layer (support film) 31 through the measurement aperture 33, reflection is thereby caused. The infrared ray thus detected is detected by an infrared detector, and an infrared absorption spectrum for the support film is obtained from the detection result.

  Next, when the infrared rays emitted from the infrared light source of the micro-infrared spectrometer are irradiated onto the respective films to be measured 32, 36, and 38, the infrared rays transmitted through the respective films to be measured 32, 36, and 38 are reflected by the infrared rays. The infrared rays reflected by the layer 31 are transmitted through the films to be measured 32, 36, and 38 and detected by the infrared detector, and an infrared absorption spectrum for the film to be measured is obtained from the detection result.

  Then, when the infrared absorption spectrum for the support film is subtracted from each infrared absorption spectrum for the film to be measured, a net infrared absorption spectrum of each of the films to be measured 32, 36, and 38 is obtained. From this net infrared absorption spectrum, the chemistry of the films 32, 36, and 38 to be measured, that is, the gate insulating film 13 made of silicon nitride, the semiconductor thin film 14 made of intrinsic amorphous silicon, and the ohmic contact layers 16 and 17 made of n-type amorphous silicon. The state can be evaluated, that is, whether or not the gate insulating film 13, the semiconductor thin film 14, and the ohmic contact layers 16 and 17 are formed as designed can be examined.

  When evaluating the chemical state of the film to be measured 40 (that is, the overcoat film 21), first, in order to measure the infrared reflecting layer (support film) 42, the infrared rays emitted from the infrared light source of the micro-infrared spectrometer are used. When the infrared reflection layer (support film) 42 is irradiated through the measurement opening 41 of the film to be measured 40, the infrared ray reflected thereby is detected by an infrared detector, and the red for the support film is detected from the detection result. An external absorption spectrum is obtained.

  Next, when the film to be measured 40 is irradiated with infrared rays emitted from the infrared light source of the micro-infrared spectrometer, the infrared rays that have passed through the film to be measured 40 are reflected by the infrared reflection layer 42, and the reflected infrared rays are reflected on the film. The film to be measured 40 passes through and is detected by an infrared detector, and an infrared absorption spectrum for the film to be measured is obtained from the detection result.

  Then, when the support film infrared absorption spectrum is subtracted from the measurement film infrared absorption spectrum, the net infrared absorption spectrum of the measurement film 40 is obtained. From this net infrared absorption spectrum, the chemical state of the film to be measured 40, that is, the overcoat film 21 made of silicon nitride can be evaluated, that is, whether or not the overcoat film 21 is formed as designed. You can investigate.

  Therefore, also in this liquid crystal display panel, the chemical state of the gate insulating film 13 can be evaluated from the net infrared absorption spectrum of the film to be measured 32, and the semiconductor thin film 14 can be determined from the net infrared absorption spectrum of the film to be measured 36. The chemical state of the ohmic contact layers 16 and 17 can be evaluated from the net infrared absorption spectrum of the film 38 to be measured, and the net infrared absorption of the film 40 to be measured can be evaluated. The chemical state of the overcoat film 21 can be evaluated from the spectrum.

(Ninth embodiment)
FIG. 33 shows a sectional view similar to FIG. 32 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the ninth embodiment of the present invention. This liquid crystal display panel is different from the liquid crystal display panel shown in FIG. 32 in that infrared reflection layers (cavity forming films) 31 and 42 made of metal such as chromium are removed by wet etching, and measured films 32, 36, This is that cavities 43 and 44 are formed under the portion 38 and under the portion of the film 40 to be measured.

  Therefore, in the state shown in FIG. 33, the portions of the films to be measured 32, 36, and 38 are in a state of being hollow 43 below and floating above the protruding portion 1a of the active substrate 1, and the portion of the film to be measured 40 is also Underneath, a cavity 44 is formed and floats on the gate insulating film 13.

  Then, next, when the portions of the films to be measured 32, 36, and 38 and the portions of the film to be measured 40 are electrostatically attracted and pressed with a probe of a micromanipulator (not shown), as shown by reference numerals 45 and 46 in FIG. The portions of the measured films 32, 36, and 38 and the portion of the measured film 40 are cut to obtain the measured film pieces (32, 36, 38) and the measured film piece (40).

  Next, as shown in FIG. 35, the film piece to be measured (32, 36, 38) and the film piece to be measured (40) electrostatically attracted to the probe of the micromanipulator are made of single crystal silicon, potassium bromide, or the like. It is disposed on the infrared transmitting member (support film) 47. Next, when the infrared ray transmitting member 47 is irradiated with infrared rays, the infrared ray transmitted through the infrared ray transmitting member (support film) 47 is detected by an infrared detector, and an infrared absorption spectrum for the support film is obtained from the detection result. .

  Next, when the film to be measured 32 of the film pieces to be measured (32, 36, 38) on the infrared transmitting member 47 is irradiated with infrared light, the infrared light transmitted through the film is detected by an infrared detector. An infrared absorption spectrum for the film to be measured 32 is obtained from the detection result. In the same manner, other infrared absorption spectra for the films to be measured 36, 38, and 40 are obtained.

  Then, when the infrared absorption spectrum for the support film is subtracted from the infrared absorption spectrum for each measured film, the net infrared absorption spectrum of each of the measured films 32, 36, 38, 40 is obtained. In this case, since transmitted infrared rays can be sufficiently measured, the S / N of the obtained infrared absorption spectrum is improved.

  Thus, in this film evaluation method, for example, the portions of the films to be measured 32, 36, and 38 formed on the active substrate 1 are cut into film pieces to be measured (32, 36, 38). Since the film pieces (32, 36, 38) are arranged on the infrared transmitting member 47, even if the active substrate 1 for forming the films to be measured 32, 36, 38 is a glass substrate that absorbs a large amount of infrared light. A practical net infrared absorption spectrum of the films to be measured 32, 36, and 38 can be obtained.

(10th Embodiment)
FIG. 36 is a sectional view similar to FIG. 35 for explaining the film evaluation method as the tenth embodiment of the present invention. In this embodiment, the film piece to be measured (32, 36, 38) and the film piece to be measured (40) are arranged on the upper surface of an infrared reflecting layer (support film) 49 made of chromium or the like provided on the upper surface of the glass substrate 48. Like to do.

  When infrared rays are irradiated onto the infrared reflection layer (support film) 49, the infrared rays reflected thereby are detected by an infrared detector, and an infrared absorption spectrum for the support film is obtained from the detection result.

  Next, when the film to be measured 32 of the film pieces to be measured (32, 36, 38) on the infrared reflecting layer 49 is irradiated with infrared rays, the infrared rays that have passed through the film to be measured 38 are reflected by the infrared reflecting layer 49. The reflected infrared light passes through the film to be measured 38 and is detected by the infrared detector, and an infrared absorption spectrum for the film to be measured 38 is obtained from the detection result. In the same manner, other infrared absorption spectra for the films to be measured 36, 38, and 40 are obtained.

  Then, when the infrared absorption spectrum for the support film is subtracted from the infrared absorption spectrum for each measured film, the net infrared absorption spectrum of each of the measured films 32, 36, 38, 40 is obtained.

  Thus, in this film evaluation method, for example, the portions of the films to be measured 32, 36, and 38 formed on the active substrate 1 are cut into film pieces to be measured (32, 36, 38). Since the film pieces (32, 36, 38) are disposed on the infrared reflection layer (support film) 49, the active substrate 1 for forming the films to be measured 32, 36, 38 is a glass substrate that absorbs a large amount of infrared light. Even so, practical net infrared absorption spectra of the films to be measured 32, 36, and 38 can be obtained.

(Eleventh embodiment)
FIG. 37 is a plan view similar to FIG. 29 of an example of a liquid crystal display panel provided with a film to be measured for evaluation by the film evaluation method as the eleventh embodiment of the present invention, and FIG. 38 is a XXXVIII-XXXVIII of FIG. FIG. 39 is a sectional view taken along line XXXIX-XXXIX in FIG. In this liquid crystal display panel, the main difference from the liquid crystal display panel shown in FIGS. 29 and 30 is that instead of the infrared reflecting layer 31, a glover material such as silicon carbide or silicon ceramic or a nichrome wire material (Ni, Cr, Mn, The infrared generation layer 61 made of an Fe alloy) is provided.

  In this case, connection terminals 62 and 63 made of chromium or the like are provided on the upper surface of both ends in the length direction of the infrared ray generation layer 61 and the upper surface of the protruding portion 1a of the active substrate 1 in the vicinity thereof. A predetermined part of the connection terminals 62 and 63 is exposed through openings 64 and 65 provided continuously to the gate insulating film 13 and the overcoat film 21.

  In this liquid crystal display panel, when a voltage is applied to the infrared generation layer (support film) 61 via the connection terminals 62 and 63 exposed through the openings 64 and 65, the infrared generation layer (support film) 61 Infrared light is generated, and the generated infrared light passes through the measured films 32, 36, 38, and 40 and is detected by the infrared detector. From each detection result, an infrared absorption spectrum for each measured film is obtained, Infrared rays emitted from the infrared generation layer (support film) 61 are directly detected by an infrared detector, and an infrared absorption spectrum for the support film is obtained from the detection result.

  Then, when the infrared absorption spectrum for the infrared generation layer is subtracted from the infrared absorption spectrum for each measured film, the net infrared absorption spectrum of each of the measured films 32, 36, 38, and 40 is obtained. In this case, since transmitted infrared rays can be sufficiently measured, the S / N of the obtained infrared absorption spectrum is improved.

  As described above, in this film evaluation method, the films to be measured 32, 36, 38, and 40 are formed on a part of the infrared ray generation layer 61 formed on the active substrate 1. , 38, 40, even if the active substrate 1 is a glass substrate that absorbs a large amount of infrared light, a practical net infrared absorption spectrum of the films to be measured 32, 36, 38, 40 can be obtained. .

(Twelfth embodiment)
In FIGS. 37 to 39, the reference numeral 61 designates a TGS (triglycine sulfide: deuterated glycine sulfate) pyroelectric material or a thermocouple (gold foil / gold black is deposited on the thermocouple to make the surface black. An infrared detection layer made of a material close to the body). In this case, the connection terminals 62 and 63 are infrared detection connection terminals.

  In this liquid crystal display panel, when any one of the exposed surfaces of the measured films 32, 36, 38, and 40 and the infrared detection layer (support film) 61 is irradiated with infrared rays, each measured film infrared absorption spectrum and support film An infrared absorption spectrum is obtained. Then, when the infrared absorption spectrum for the support film is subtracted from the infrared absorption spectrum for each measured film, the net infrared absorption spectrum of each of the measured films 32, 36, 38, 40 is obtained.

  As described above, in this film evaluation method, the films to be measured 32, 36, 38, and 40 are formed on a part of the infrared detection layer 61 formed on the active substrate 1. , 38, 40, even if the active substrate 1 is a glass substrate that absorbs a large amount of infrared light, a practical net infrared absorption spectrum of the films to be measured 32, 36, 38, 40 can be obtained. .

The top view of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 1st Embodiment of this invention. FIG. 2 is an enlarged plan view of a portion A (a portion of a film to be measured) in FIG. 1. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2 and a cross-sectional view of a portion of a thin film transistor on an active substrate. FIG. 4 is a cross-sectional view of an initial process in an example of a method for manufacturing the liquid crystal display panel shown in FIG. 3. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. FIG. 9 is a cross-sectional view of the process following FIG. 8. Sectional drawing of the process following FIG. The top view similar to FIG. 2 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 2nd Embodiment of this invention. Sectional drawing in alignment with the XII-XII line | wire of FIG. 11, and sectional drawing of the part of the thin-film transistor on an active substrate. Sectional drawing of a predetermined | prescribed process in an example of the manufacturing method of the liquid crystal display panel shown in FIG. Sectional drawing of the process following FIG. FIG. 15 is a cross-sectional view of the process following FIG. 14. FIG. 16 is a cross-sectional view of the process following FIG. 15. Sectional drawing similar to FIG. 12 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 3rd Embodiment of this invention. FIG. 18 is a cross-sectional view of a predetermined process in an example of the method for manufacturing the liquid crystal display panel shown in FIG. 17. FIG. 19 is a cross-sectional view of the process following FIG. 18. FIG. 20 is a cross-sectional view of the process following FIG. 19. FIG. 21 is a cross-sectional view of the process following FIG. 20. The top view similar to FIG. 2 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 4th Embodiment of this invention. Sectional drawing in alignment with the XXIII-XXIII line | wire of FIG. 11, and sectional drawing of the part of the thin-film transistor on an active substrate. FIG. 24 is a cross-sectional view of a predetermined step in the example of the method for manufacturing the liquid crystal display panel shown in FIG. FIG. 25 is a sectional view of a step following FIG. 24. FIG. 26 is a sectional view of a step following FIG. 25. Sectional drawing similar to FIG. 3 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 5th Embodiment of this invention. Sectional drawing similar to FIG. 27 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 6th Embodiment of this invention. The top view similar to FIG. 22 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 7th Embodiment of this invention. Sectional drawing which follows the XXX-XXX line of FIG. The top view similar to FIG. 22 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 8th Embodiment of this invention. Sectional drawing which follows the XXXII-XXXII line | wire of FIG. Sectional drawing similar to FIG. 32 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 9th Embodiment of this invention. FIG. 34 is a sectional view of a step following FIG. 33. FIG. 35 is a sectional view of a step following FIG. 34. FIG. 36 is a cross-sectional view similar to FIG. 35 for explaining the film evaluation method as the tenth embodiment of the present invention. The top view similar to FIG. 29 of an example of the liquid crystal display panel provided with the to-be-measured film | membrane for evaluating with the film | membrane evaluation method as 11th Embodiment of this invention. Sectional drawing which follows the XXXVIII-XXXVIII line | wire of FIG. Sectional drawing which follows the XXXIX-XXXIX line | wire of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Active substrate 1a Protruding part 2 Opposite substrate 4 Thin film transistor 11 Gate electrode 12 Scan line 13 Gate insulating film 14 Semiconductor thin film 15 Channel protective film 16, 17 Ohmic contact layer 18 Source electrode 19 Drain electrode 20 Data line 21 Overcoat film 22 Contact hole 23 Pixel electrode 31 Infrared reflective layer (support film)
32 Measurement Film 33 Measurement Opening 34 Opening 35 Opening 36 Measurement Film 37 Measurement Opening 38 Measurement Film 38 Measurement Opening 40 Measurement Film 41 Measurement Opening 42 Infrared Reflecting Layer (Supporting Film)
43, 44 Cavity 61 Infrared generation layer (infrared detection layer)
62, 63 Connection terminal 64, 65 Opening

Claims (14)

Irradiating the infrared reflecting layer formed on the substrate with infrared rays, detecting the reflected infrared rays, and obtaining an infrared absorption spectrum for the infrared reflecting layer from the detection result;
Irradiate the film to be measured formed by exposing a part of the infrared reflective layer, and detect the infrared light transmitted through the film to be measured and reflected by the infrared reflective layer. Obtaining an infrared absorption spectrum for the film;
Subtracting the infrared absorption spectrum for the infrared reflecting layer from the infrared absorption spectrum for the film to be measured to obtain a net infrared absorption spectrum of the film to be measured;
The film | membrane evaluation method characterized by having. Preparing a sample in which a part of the infrared reflective layer formed on the substrate is exposed to form a support film, and a part of the support film is exposed to form a film to be measured;
Irradiating the support film on the infrared reflection layer with infrared rays, detecting infrared rays transmitted through the support film and reflected by the infrared reflection layer, and obtaining an infrared absorption spectrum for the support film from the detection results; ,
Irradiating the film to be measured on the support film with infrared rays, detecting infrared rays that are transmitted through the film to be measured and reflected by the infrared reflecting layer, and obtaining an infrared absorption spectrum for the film to be measured from the detection result When,
Subtracting the infrared absorption spectrum for the supporting film from the infrared absorption spectrum for the measured film to obtain a net infrared absorption spectrum of the measured film;
The film | membrane evaluation method characterized by having.   3. The film evaluation method according to claim 1, wherein the infrared reflection layer is simultaneously formed of the same material as the electrode of the thin film transistor formed on the substrate. Preparing a film to be measured formed on a substrate transparent to infrared;
Irradiating infrared rays on a substrate transparent to infrared rays, detecting infrared rays transmitted therethrough, and obtaining a substrate infrared absorption spectrum transparent to infrared rays from the detection results;
The film to be measured formed on the substrate transparent to the infrared rays is irradiated with infrared rays, and the infrared rays that have passed through the substrate to be measured and the transparent substrate to the infrared rays are detected. Obtaining an infrared absorption spectrum for use;
Subtracting the infrared absorption spectrum for a substrate transparent to the infrared from the infrared absorption spectrum for the measured film to obtain a net infrared absorption spectrum of the measured film;
The film | membrane evaluation method characterized by having. A step of preparing a film to be measured formed by exposing a part of a support film formed on a substrate transparent to infrared; and
Irradiating a support film formed on a substrate transparent to the infrared light with infrared light, detecting infrared light transmitted therethrough, and obtaining an infrared absorption spectrum for the support film from this detection result;
Irradiate the film to be measured formed by exposing a part on the support film, and detect the infrared light transmitted through the substrate to be measured, the support film, and the substrate transparent to the infrared, and the detection result Obtaining an infrared absorption spectrum for the film to be measured from
Subtracting the infrared absorption spectrum for the supporting film from the infrared absorption spectrum for the measured film to obtain a net infrared absorption spectrum of the measured film;
The film | membrane evaluation method characterized by having.   6. The method according to claim 4, further comprising a step of forming an element including a film to be measured and moving it onto the measurement substrate while leaving a part of the element when the substrate is not an infrared transmitting member. And a film evaluation method.   7. The film evaluation method according to claim 6, wherein the element is simultaneously formed of the same material as the electrode of the thin film transistor formed on the substrate. Directly detecting infrared rays generated in the infrared generation layer formed on the substrate, and obtaining an infrared absorption spectrum for the infrared generation layer from the detection results;
Infrared light generated in the infrared ray generation layer passes through a film to be measured formed on a part of the infrared ray generation layer, and the transmitted infrared ray is detected, and an infrared absorption spectrum for the film to be measured is obtained from the detection result. Process,
Subtracting the infrared absorption spectrum for the infrared generation layer from the infrared absorption spectrum for the film to be measured to obtain a net infrared absorption spectrum of the film to be measured;
The film | membrane evaluation method characterized by having. Preparing a sample in which a part of the infrared generation layer formed on the substrate is exposed to form a support film, and a part of the support film is exposed to form a film to be measured;
A step in which infrared rays generated in the infrared generation layer are transmitted through a support film formed on a part of the infrared generation layer, the transmitted infrared rays are detected, and an infrared absorption spectrum for the support film is obtained from the detection result; ,
Infrared light generated in the infrared generation layer passes through a support film and a measurement film formed on a part of the infrared generation layer, and the transmitted infrared light is detected. From the detection result, infrared absorption for the measurement film is detected. Obtaining a spectrum;
Subtracting the infrared absorption spectrum for the supporting film from the infrared absorption spectrum for the measured film to obtain a net infrared absorption spectrum of the measured film;
The film | membrane evaluation method characterized by having. Irradiating the infrared detection layer formed on the substrate with infrared rays, detecting the infrared rays irradiated on the infrared detection layer with the infrared detection layer, and obtaining an infrared absorption spectrum for the infrared detection layer from the detection results;
Infrared absorption spectrum for the film to be measured is detected from the detection result by irradiating the film to be measured formed on a part of the infrared detection layer with infrared light, and detecting the infrared light transmitted through the film to be measured by the infrared detection layer. Obtaining
Subtracting the infrared absorption spectrum for the infrared detection layer from the infrared absorption spectrum for the film to be measured to obtain a net infrared absorption spectrum of the film to be measured;
The film | membrane evaluation method characterized by having. Preparing a support film formed by exposing a part of the infrared detection layer formed on the substrate, and a film to be measured formed by exposing a part of the support film;
The support film formed by exposing a part of the infrared detection layer is irradiated with infrared rays, and the infrared detection layer detects infrared rays applied to the infrared detection layer. Obtaining an external absorption spectrum;
The film to be measured formed on a part of the support film is irradiated with infrared light, and the infrared light transmitted through the film to be measured is detected by the infrared detection layer. From the detection result, an infrared absorption spectrum for the film to be measured is obtained. Obtaining a step;
Subtracting the infrared absorption spectrum for the supporting film from the infrared absorption spectrum for the measured film to obtain a net infrared absorption spectrum of the measured film;
The film | membrane evaluation method characterized by having.   12. The film evaluation method according to claim 1, wherein the substrate is a glass substrate.   12. The film evaluation method according to claim 1, wherein the film to be measured includes a plurality of types of films to be measured.   The invention according to any one of claims 1 to 11, wherein the film to be measured includes at least one of a film constituting a thin film transistor formed on the substrate and an overcoat film formed thereon. A film evaluation method characterized by being formed simultaneously with the same material.

Images