JP2007095938A - Tester, prober, wafer test system and electrical contact position detection method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To materialize various improvements in electrical contact position detection processing. <P>SOLUTION: A wafer test system comprises a tester 30 and a prober 10. Since the tester is connected to the prober via a communication path and a probe 26 detects a position coming into contact with an electrode of a semiconductor device electrically, after the electrode is shifted to a position beneath the probe when a wafer stage 18 is lifted up from the probe; the tester 30 notifies the prober of the time when the prober comes into contact with the electrode at first, and the time when the every probe comes into contact with the electrode, via the communication path, and the prober stores height positions at respective points in time. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wafer test system for performing an electrical inspection of a plurality of semiconductor chips (dies) formed on a semiconductor wafer, a tester and a prober constituting the system, and a position where a chip electrode contacts a probe of the prober. The present invention relates to an electrical contact position detection method for electrical detection.

  In the semiconductor manufacturing process, various processes are performed on a thin disk-shaped semiconductor wafer to form a plurality of chips (dies) each having a semiconductor device (device). Each chip is inspected for electrical characteristics, then separated by a dicer, and then fixed to a lead frame and assembled. The inspection of the electrical characteristics is performed by a wafer test system that combines a prober and a tester. The prober fixes the wafer to the stage and brings the probe into contact with the electrode pad of each chip. The tester supplies power and various test signals from the terminals connected to the probe, and analyzes the signals output to the electrodes of the chip with the tester to check whether it operates normally.

  The probe is provided on the probe card, and the arrangement of the probes corresponds to the arrangement of the electrode pads of the semiconductor chip to be inspected. Examples of the probe include a cantilever type probe and a spring probe, but the present invention covers all types of probes. When the type of semiconductor chip to be inspected changes, it is necessary to replace the probe card with a corresponding one. When the probe card is replaced, a probe position detection camera provided in the prober detects the probe position. Note that the probe position is detected as needed even when the inspection of the semiconductor chip on one wafer is completed, even when the probe card is not replaced.

  On the other hand, when the wafer is held on the wafer stage, the position of the electrode pad of the chip is detected by a wafer alignment camera provided in the prober. Then, after rotating the wafer stage so that the arrangement direction of the electrode pads on the chip and the arrangement direction of the probes coincide with each other, the wafer stage is moved so that the electrode pads are located immediately below the corresponding probes. If the wafer stage is raised in this state, the electrode pad contacts the probe.

  The needle position detection camera can also detect the height position (Z coordinate) of the probe, and conventionally the surface of the wafer has been raised from the probe height position detected by the needle position detection camera to a position higher by a predetermined amount. . The amount of movement to be further raised from the height position of the probe is based on the amount of displacement of the tip of the probe from which the amount of displacement of the probe can be obtained to obtain a contact pressure that realizes reliable electrical contact between the probe and the electrode pad It is determined. Actually, the number of probes is several hundreds, for example, and the movement end position is set so that reliable electrical contact is realized between all the probes and the electrode pads.

  However, in recent years, semiconductor devices (devices) have been increasingly miniaturized, and accordingly, the size of the electrode pad has been reduced, and the electrode pad itself has also been made thinner. In addition, a material having a low hardness has been used for the electrode pad. Further, multilayering of semiconductor devices has been promoted, and an electric circuit has been formed under an electrode pad. With conventional electrode pads, normal contact could be established even if the probe was brought into contact with the electrode pad by the conventional method. However, due to the thinning of the electrode pad and the use of a low hardness material as described above. However, when the probe is brought into contact with the electrode pad by a conventional method, there is a problem that the tip of the probe penetrates the electrode pad film and normal contact cannot be established. In addition, when an electric circuit is formed under the electrode pad, if the tip of the probe penetrates the electrode pad film, the electric circuit under the electrode pad is damaged and does not operate normally. For this reason, the range of the allowable contact pressure when the probe is brought into contact with the electrode pad is reduced, and it is required to realize the contact between the probe and the electrode pad within the reduced allowable contact pressure range.

  However, the probe height position detected by the prober's needle position detection camera is considered to have insufficient accuracy, and the probe height position detection by the prober's needle position detection camera is considered as rough detection. Then, “contact height position detection processing by an electrical contact test using a tester” (hereinafter referred to as electrical contact position detection processing) has been performed as a precision (fine) detection processing. In this process, the wafer is moved and rotated so that the electrode pad is located immediately below the corresponding probe, and then the tester raises the wafer while monitoring the potential of each terminal. Is transmitted to the prober, and the prober stores the height position (total contact position) of the wafer stage at that time. The height position (measurement position) at the time of measurement is a position that is higher by a predetermined amount (overdrive amount) than the total contact position. Thereby, the contact pressure which implement | achieves reliable electrical contact between a probe and an electrode pad is obtained.

JP 2004-039752 A (Overall)

  Although the electrical contact position detection process is performed as described above, there are the following problems.

  Testers and probers are manufactured by different manufacturers and are designed and manufactured independently. The electrical contact position detection processing is realized by a tester test program, but the detection content is not unified by the tester manufacturer. For example, a probe card is usually provided with 700 or more probes, and there is some variation in the height position. However, in each manufacturer's program, in the electrical contact position detection process, a detection signal is output when the tip of the lowest probe first contacts the electrode pad, or when all probes contact the electrode pad. It was not decided whether to output the detection signal. This seems to be because it has been considered that no problem arises on the assumption that the variation in the height position of the probe is small. However, in actuality, there is some variation in the height position of the probe, and in particular, the variation increases with the number of uses. Depending on the tester, contact may not be detected only when one probe contacts the electrode pad, and contact may be detected only when two or more probes contact the electrode pad. Including the first contact of one probe. In any case, the tester outputs a detection signal only once when the probe comes into contact with the electrode pad according to a criterion determined by the tester. Therefore, variations in the tip position of the probe are not taken into account, causing a variation in contact pressure corresponding to the variation, and a problem that the error in the contact pressure increases accordingly.

  Also, if any of the probes is defective, or if the tester cannot monitor the potential of any of the probes due to an electrical failure, an electrical contact position detection process that detects contact of all the probes is performed. A detection error that cannot be detected occurs. However, even if a detection abnormality occurred, it was not possible to identify whether the prober had a cause or a tester.

  In addition, when a detection abnormality occurs due to the above-described cause, the wafer held on the wafer stage continues to rise because no electrical contact is detected, so that the contact pressure between the probe and the electrode pad increases, The contact depth of the electrode pad becomes too deep, and the probe abnormally bites into the electrode pad. In such a state, not only the electrode pad but also the probe is destroyed.

  Further, as described above, the electrical contact position detection process is performed as a rough detection based on the probe height position detection by the probe position detection camera of the prober, and is performed as a fine detection process based on the detection result. If there is an error, detection will be abnormal, and problems such as the inability to identify the cause as described above and problems such as destruction of the electrode pads and probes will occur.

  Furthermore, the cause of the detection abnormality is a contact mark on the electrode pad and a contact of the cleaning sheet used for cleaning with the probe. In order to remove such wrinkles, the probe is cleaned with a cleaning sheet or the probe is cleaned with a cleaning brush. Until now, the electrical contact position detection process and the cleaning process have not been associated with each other. There wasn't.

  Furthermore, the wafer test needs to be performed under various environmental conditions according to the specifications of the semiconductor device. For example, the inspection is performed at a high temperature of 100 ° C. or higher and a low temperature of about −50 ° C. Therefore, the prober wafer stage is provided with a heater and a cooling chiller system, and the wafer held on the wafer stage and the probe card in the vicinity thereof are at a high temperature or a low temperature. Conventionally, when the inspection is performed under such environmental conditions, the electrical contact position detection process is performed when the probe card is replaced, and is determined by the electrical contact position detection process after being set to a predetermined environmental condition. The inspection was performed at the inspection position. However, when the temperature condition changes, each part expands or contracts to change the position. Therefore, it is conceivable that the desired inspection position also changes, resulting in a problem that the inspection cannot be performed correctly due to deviation from the desired inspection state.

  The present invention solves the above-described problems, and an object of the present invention is to make various improvements regarding electrical contact position detection processing.

  In order to achieve the above object, the tester, prober, wafer test system and electrical contact position detection method of the present invention clearly define the detection contents, and perform the wafer test system when performing electrical contact position detection processing. The testers and probers that make up work together to make effective use of various information.

  In the wafer test system according to the first aspect of the present invention, a tester and a prober constituting the wafer test system are connected via a communication path, and the electrode of the semiconductor device is positioned immediately below the probe for electrical contact position detection processing. When the wafer stage is moved up with respect to the probe after the movement, the tester communicates to the prober when the probe first contacts the electrode of the semiconductor device and when all of the probes contact the electrode of the semiconductor device. Notification via the route, the prober memorizes the height position of each time point. These differences in height position correspond to variations in the height position of the probe, so that the prober can effectively use this information.

  As described above, depending on the tester, contact may not be detected only when one probe contacts the electrode pad, and contact may be detected only when two or more probes contact the electrode pad. Here, it is assumed that one probe is contacted for the first time including these. Further, when the tester monitors the contact of the probe with the electrode pad, not all probes are monitored, but only some probes may be monitored. In this case, all of the probes are not connected to the electrode of the semiconductor device. When touched, it means that all of the monitored probes have contacted the electrodes of the semiconductor device.

  Since the probe card has an allowable range of variation in the probe tip position, if the difference in the detected height position exceeds this allowable range, the probe card cannot be used and a warning is output. To do.

  Further, as described above, the prober has a needle position detection mechanism for detecting the height position of the probe, and detects the height position of the probe before the electrical contact position detection process. When the difference between the detected height position and the probe height position detected by the needle position detection mechanism is too large, in other words, when it exceeds a predetermined allowable range, a warning is similarly output.

  In the wafer test system according to the second aspect of the present invention, the electrical contact position detection process is performed under environmental conditions when the operation of the semiconductor device is electrically inspected. The second aspect is also applicable to the first aspect.

  According to the second aspect, since the electrical contact position detection process is performed under the same environmental conditions as when the operation of the semiconductor device is actually electrically inspected, it is not affected by various changes due to differences in environmental conditions. .

  In the wafer test system according to the third aspect of the present invention, the electrical contact position detection processing causes the electrode pad to contact the probe according to the height position of the probe detected using the probe position detection mechanism of the prober. This is performed after confirming whether the height position of the probe detected using the needle position detection mechanism is correct by performing processing and detecting the contact trace of the electrode pad with the alignment mechanism.

  According to the third aspect, when there is an error in the height position of the probe detected using the needle position detection mechanism, it is possible to avoid the occurrence of detection abnormality in the electrical contact position detection process performed based on the error. .

  In the wafer test system according to the fourth aspect of the present invention, it is possible to easily select whether to perform cleaning before the electrical contact position detection processing. As described above, the adhesion of various kinds of soot to the probe causes detection abnormality in the electrical contact position detection processing due to poor conduction, but if the cleaning is selected in the fourth mode, the occurrence of detection abnormality is avoided. it can. It should be noted that the electrical contact position detection process is performed without selecting cleaning, and if a detection abnormality occurs, the electrical contact position detection process is performed again after cleaning.

  In the wafer test system according to the fifth aspect of the present invention, the highest position when the wafer stage is raised so that the probe first contacts the electrode of the semiconductor device is set to the height of the probe detected by the needle position detection mechanism. Set the position as a reference.

  As described above, the probe height position is detected by the probe position detection mechanism before the electrical contact position detection process is performed. If the probe does not first contact the electrode of the semiconductor device in the vicinity of the position set from the probe height position detected by the probe position detection mechanism of the prober, it is considered that there is a possibility of detection abnormality. If it is raised, the electrode pad or the probe may be damaged. According to the 5th aspect, since the highest position of a raise is restrict | limited, such a problem does not arise.

  Further, in the wafer test system according to the sixth aspect of the present invention, the highest position when the wafer stage is raised so that all of the probes are in contact with the electrodes of the semiconductor device is the probe first contacting the electrodes of the semiconductor device. It is set based on the height position of the hour.

  As described above, the variation in the tip position of the probe has an allowable range. Therefore, in the electrical contact position detection process, the height position at which all of the probe contacts the electrode of the semiconductor device is If it is within the range that is close to the allowable distance from the height when it touches the electrode, and it cannot be detected that all of the probes have contacted the electrodes of the semiconductor device even if this range is exceeded, a detection error will occur. Since it is thought to have occurred, it stops further climbing. Thereby, damage to the electrode pad and the probe is avoided.

  According to the present invention, electrical contact position detection processing can be performed using various information more effectively, and even when a detection abnormality occurs, damage to the electrode pad and the probe can be avoided.

  FIG. 1 is a diagram showing a schematic configuration of a wafer test system according to an embodiment of the present invention. The wafer test system includes a prober 10, a tester 30, and a GPIB system 40. As shown, the prober 10 includes a base 11, a moving base 12, a Y-axis moving table 13, an X-axis moving table 14, a Z-axis moving unit 15, and a Z-axis moving table provided thereon. 16, θ rotation unit 17, wafer stage 18, needle position detection camera 19 for detecting the position of the probe, support columns 20 and 21, head stage 22, wafer alignment camera 23 supported by support column 21, A card holder 24 provided on the head stage 22, a probe card 25 attached to the card holder 24, and a control unit 29 including a stage movement control unit 27 and an image processing unit 28 are included. The probe card 25 is provided with a cantilever type probe 26. The movement base 12, the Y-axis movement table 13, the X-axis movement table 14, the Z-axis movement unit 15, the Z-axis movement table 16, and the θ rotation unit 17 move the wafer stage 18 in the three-axis direction and the Z-axis direction. A movement / rotation mechanism that rotates around is configured and controlled by the stage movement control unit 27. Since the moving / rotating mechanism is widely known, the description thereof is omitted here. The probe card 25 has a probe 26 arranged according to the electrode arrangement of the device to be inspected, and is exchanged according to the device to be inspected. The image processing unit 28 calculates the arrangement and height position of the probe from the image captured by the needle position detection camera 19, and determines the position of the electrode pad of the semiconductor chip (die) on the wafer from the image captured by the wafer alignment camera 23. To detect. Note that the image processing unit 28 can detect a contact mark caused by the contact of the probe with the electrode pad by image processing. The control unit 29 performs various control processes.

  The tester 30 includes a tester body 31 and a contact ring 32 provided on the tester body 31. The probe card 25 is provided with a terminal connected to each probe, and the contact ring 32 has a spring probe arranged so as to contact the terminal. The tester body 31 is held with respect to the prober 10 by a support mechanism (not shown). Further, the tester main body 31 and the control unit 29 of the prober 10 are connected via a GPIB system 40 so as to be communicable.

  When performing the inspection, the Z-axis moving table 16 is moved so that the needle position detection camera 19 is positioned below the probe 26, and the tip position of the probe 26 is detected by the needle position detection camera 19. The position (X and Y coordinates) of the tip of the probe 26 in the horizontal plane is detected by the coordinates of the camera, and the position in the vertical direction is detected by the focal position of the camera. The detection of the tip position of the probe 26 must be performed whenever the probe card is replaced, and is appropriately performed every time a predetermined number of chips are measured even when the probe card is not replaced. The probe card 25 is usually provided with 700 or more probes 26, and usually the tip positions of specific probes are detected without detecting the tip positions of all the probes 26.

  Next, with the wafer W to be inspected held on the wafer stage 18, the Z-axis moving table 16 is moved so that the wafer W is positioned under the wafer alignment camera 23, and the electrode pads of the semiconductor chips on the wafer W are moved. The position of is detected. It is not necessary to detect the positions of all the electrode pads of one chip, and the positions of several electrode pads may be detected. Further, it is not necessary to detect the electrode pads of all the chips on the wafer W, and the positions of the electrode pads of several chips are detected.

  FIG. 2 is a diagram for explaining the operation of bringing the electrode pad into contact with the probe 26. After detecting the position of the probe 26 and the position of the wafer W, the θ stage 17 rotates the wafer stage 18 so that the arrangement direction of the chip electrode pads coincides with the arrangement direction of the probe 26. Then, after moving so that the electrode pad of the chip to be inspected on the wafer W is positioned below the probe 26, the wafer stage 18 is raised and the electrode pad is brought into contact with the probe 26.

  When the electrode pad is brought into contact with the probe 26, the electrode pad is raised from a height position (contact start position) at which the surface of the electrode pad contacts the tip of the probe 26 to a position (inspection position) higher by a predetermined amount. The inspection position is obtained by adding the displacement amount of the tip of the probe at which the displacement amount of the probe 26 is obtained so as to obtain a contact pressure that realizes reliable electrical contact between the probe 26 and the electrode pad to the contact start position. It is the height position. Actually, the number of probes 26 is several hundred, for example, and the inspection position is set so that reliable electrical contact is realized between all the probes 26 and the electrode pads.

  The electrical contact position detection process is also performed by the operation of bringing the electrode pad shown in FIG. In the case of electrical contact position detection processing, a wafer on which a chip of a normal semiconductor device (device) is formed can be used, but a wafer on which a dedicated chip in which each electrode pad is connected to the ground is used. There is also a case. The tester 30 monitors the potential of the terminal connected to each probe, and determines that the probe is in contact with the electrode pad when it detects that the probe potential is grounded by connecting the probe to the electrode pad. In this case as well, the number of probes is large, so that contact of only a part of probes may be detected without detecting contact of all probes.

  FIG. 3 is a flowchart showing a series of processes related to the electrical contact position detection process in the embodiment of the present invention.

  In step 101, the operator is requested to determine whether probe cleaning processing is necessary. If the operator determines that no cleaning process is necessary, the process proceeds to step 103. When the operator determines that the cleaning process is necessary, the process proceeds to step 102, performs the cleaning process, and then proceeds to step 103. The cleaning process includes a cleaning sheet process in which the probe tip is brought into contact with the cleaning sheet to remove the electrode pad wrinkles attached to the probe tip, a brush process in which the cleaning sheet wrinkles attached to the probe is removed with a brush, and the like. . Since the cleaning process is widely known, further explanation is omitted here.

  In step 103, the operator is requested to determine whether the inspection after the electrical contact position detection process is an inspection at room temperature or an inspection that requires temperature setting such as high temperature or low temperature. If temperature setting is not necessary, the process proceeds to step 105. When the temperature setting is necessary, the process proceeds to step 104, where the temperature setting process is performed to wait until the measurement portion of the prober reaches the set temperature, and when the set temperature is reached, the process proceeds to step 105. Since the temperature setting mechanism in the prober is widely known, a description thereof is omitted here. In any case, by setting the temperature, the positions of the wafer, the wafer stage, the probe card, and the like are actually inspected.

  In step 105, the position of the electrode pad of the chip formed on the wafer is detected by the wafer alignment camera 23 as described above.

  In step 106, the needle position detection camera 19 is moved below the probe 26 as described above to detect the tip position (X, Y, Z coordinates) of the probe.

  In step 107, the operator is requested to determine whether or not it is necessary to confirm whether the tip position of the probe detected as described above is accurate. If not necessary, the process proceeds to step 109, and if necessary, the process proceeds to step 108 to perform position confirmation processing. Based on the probe tip position detected in step 105 and the position of the electrode pad detected in step 106, the position confirmation process is performed so that the electrode pad is positioned immediately below the corresponding probe, as in the prior art. The wafer stage is raised to bring the electrode pad into contact with the probe. It is assumed that the highest position of the wafer stage is higher than the contact start position but lower than the inspection position. Thereafter, the electrode pad brought into contact with the probe is moved below the wafer alignment camera 23 to detect a contact mark of the electrode pad. If a desired contact mark is detected, it is confirmed that the tip position of the probe detected in step 105 and the position of the electrode pad detected in step 106 are accurate. If the desired contact mark is not detected (no detection, if a contact mark of a different shape is detected), the probe tip position detected in step 105 and the electrode pad position detected in step 106 are not accurate. A warning is output to the operator. In response to this warning, the operator returns to step 105 and repeats the process again, or performs an operation of confirming the detection states of the needle position detection camera 19 and the wafer alignment camera 23. In this case, the electrical contact position detection process is stopped.

  In step 109, an electrical contact position detection process is performed based on the probe tip position detected in step 105 and the electrode pad position detected in step 106. FIG. 4 shows a state in which one of the electrode pads first contacts the corresponding probe 26 (left side in the figure) and a state in which all the electrode pads contact the corresponding probe 26 (right side in the figure). In each state, the tester transmits a detection signal to the control unit 29 of the prober 10 via the GPIB system 40. In response to this, the control unit 29 stores the Z coordinate of the wafer stage 18 at that time. The difference between the two positions is indicated by D in FIG.

  In step 110, it is determined whether a detection result has been obtained, that is, a signal indicating that all the probes have contacted the electrode pads has been output. Note that this includes the time when the signal that the probe has first contacted the electrode pad is not output. If this signal is not output, any abnormality on the tester side or probe side, such as an abnormality in the tester side wiring or circuit, an abnormality in which flaws adhere to the tip of the probe and electrical conductivity cannot be obtained, and the probe It seems that there was an abnormality such as missing. Accordingly, the process proceeds to step 111 to request the operator to determine whether to perform the electrical contact position detection process again. When performing the process again, the process proceeds to step 102 to perform the cleaning process, and thereafter the same process is performed. Since there is no need to retry further once retrying, etc., the process proceeds to step 112 and a detection abnormality is output.

  When the detection result is obtained, the process proceeds to step 113, and it is determined whether or not the value D detected in step 109 is within an allowable range of variations in the probe height position of the probe card. If it is outside the allowable range, the process proceeds to step 114 to warn that there is an abnormality in the probe card. If it is within the allowable range, it is confirmed that a normal inspection can be performed, and the process ends. Thereafter, a normal inspection process is performed.

  In the above example, the electrical contact position detection process in step 109 is performed based on the probe tip position detected in step 105 and the electrode pad position detected in step 106. However, the amount of movement is particularly limited. There wasn't. For this reason, if a contact signal is not obtained even though the probe is in contact with the electrode pad due to a detection abnormality, the wafer stage continues to rise and the contact pressure between the probe and the electrode pad becomes too high, and the probe and electrode The problem of damaging the pad can occur. Therefore, in a modification described below, such a problem is prevented from occurring by limiting the amount of movement in the electrical contact position detection process based on the detected position of the probe.

  FIG. 5 is a flowchart showing the process of the modification.

  Step 121 is performed after step 107 or 108 in FIG. In step 121, based on the tip position of the probe detected in step 105 and the position of the electrode pad detected in step 106, a moving amount setting process for limiting the moving amount range when performing the next electrical contact position detecting process. I do. For example, based on the lowest probe tip position detected in step 105, a range for limiting the height position at which the probe first contacts the electrode pad is set in the electrical contact position detection process. In the electrical contact position detection process, when any of the probes is not in contact with the electrode pad when the upper limit of this range is reached, it is determined that the detection is abnormal. In addition, the semiconductor chip is limited in the amount of movement (maximum contact depth) that can further lift the electrode pad after the probe contacts the electrode pad, and the probe card limits the maximum deflection of the probe. . It is considered that the electrode pad and the probe that first contact with each other in the electrical contact position detection process have the maximum contact depth and the maximum deflection amount when the wafer stage is raised to the inspection position. Therefore, in the electrical contact position detection process, the wafer stage is limited so that it does not rise above the value obtained by adding the maximum contact depth or maximum probe deflection to the height position at which the probe first contacts the electrode pad. To do. In addition to the electrical contact position detection process, the inspection position where the overdrive amount is added to all the contact positions where all the probes contact the electrode pad is also at the height position where the probe first contacts the electrode pad, The maximum contact depth or the maximum deflection amount of the probe should be set to a value or less.

  Step 122 is the same as Step 109 in FIG. 3 except that the electrical contact position detection process is performed based on the movement amount set in Step 121.

  In step 123, it is determined whether or not the result obtained in step 122 is normal. As described above, the electric contact position detection process is performed with the movement amount limited, and the obtained detection result is normal. If the result is normal, the process ends. If the result is not normal, the process proceeds to step 124 and the same processing as in FIG. 3 is performed, and if the retry is not performed, the process proceeds to step 125 to warn of an abnormality.

  The present invention can be applied to any type of prober.

It is a figure which shows the basic composition of the wafer test system which test | inspects the chip | tip on a wafer with a prober and a tester. It is a figure explaining the operation | movement which makes an electrode pad contact a probe. It is a flowchart which shows the electrical contact position detection process in an Example, and the process relevant to it. It is a figure explaining the position where a probe contacts an electrode pad first, and the position where all the probes contact an electrode pad by electrical contact position detection processing. It is a flowchart which shows the modification of the electrical contact position detection process in an Example.

Explanation of symbols

18 Wafer Stage 19 Needle Position Detection Camera 23 Wafer Alignment Camera 25 Probe Card 26 Probe

Claims (26)

In a wafer test system comprising: a tester that electrically inspects the operation of a semiconductor device formed on a wafer; and a prober that connects each terminal of the tester to an electrode of the semiconductor device, the probe is an electrode of the semiconductor device An electrical contact position detection method for electrically detecting a position in contact with
After the electrode of the semiconductor device has moved so as to be positioned directly below the probe, when the wafer stage is raised relative to the probe, the probe first contacts the electrode of the semiconductor device and the probe A method wherein the tester detects when all contact with the electrodes of the semiconductor device and notifies the prober via a communication path, and the prober stores the height position at each time point.   It is determined whether the difference between the height position at which the probe first contacts the electrode of the semiconductor device and the height position at which all of the probe contacts the electrode of the semiconductor device is within an allowable range. The method according to claim 1, wherein a warning is output when out of range. The probe position detection mechanism provided in the prober detects the height position of the probe,
The height position at which the probe first contacts the electrode of the semiconductor device, the height position at which all of the probes contact the electrode of the semiconductor device, and the height position of the probe detected by the needle position detection mechanism To determine if the difference is within an acceptable range,
The method according to claim 1, wherein a warning is output when out of an allowable range.   The method according to claim 1, wherein the process of electrically detecting the position where the probe contacts the electrode of the semiconductor device is performed under environmental conditions when the operation of the semiconductor device is electrically inspected. The needle position detection mechanism provided in the prober detects the height position of the probe,
The process of electrically detecting the position where the probe contacts the electrode of the semiconductor device, the probe is brought into contact with the electrode of the semiconductor device based on the height position of the probe detected by the needle position detection mechanism, The method according to claim 1, which is performed after detecting a contact mark of the probe on the electrode with an alignment mechanism and performing a process of confirming the contact.   The method according to claim 1, wherein an operator is automatically inquired to perform cleaning of the probe before performing a process of electrically detecting a position where the probe contacts the electrode of the semiconductor device.   The highest position when the wafer stage is raised so that the probe first contacts the electrode of the semiconductor device is set with reference to the height position of the probe detected by the probe position detection mechanism of the prober. The method of claim 1.   The highest position when raising the wafer stage so that all of the probes are in contact with the electrodes of the semiconductor device is set with reference to the height position when the probes first contact the electrodes of the semiconductor device. The method of claim 1. In a wafer test system comprising: a tester that electrically inspects the operation of a semiconductor device formed on a wafer; and a prober that connects each terminal of the tester to an electrode of the semiconductor device, the probe is an electrode of the semiconductor device An electrical contact position detection method for electrically detecting a position in contact with
After moving so that the electrode of the semiconductor device is positioned directly below the probe, the wafer stage is raised with respect to the probe to confirm that all of the probes are in contact with the electrode of the semiconductor device Is performed under environmental conditions when the operation of the semiconductor device is electrically inspected. In a wafer test system comprising: a tester that electrically inspects the operation of a semiconductor device formed on a wafer; and a prober that connects each terminal of the tester to an electrode of the semiconductor device, the probe is an electrode of the semiconductor device An electrical contact position detection method for electrically detecting a position in contact with
After moving so that the electrode of the semiconductor device is positioned directly below the probe, the wafer stage is raised with respect to the probe to confirm that all of the probes are in contact with the electrode of the semiconductor device Before the probe, the probe is brought into contact with the electrode of the semiconductor device based on the height position of the probe detected by the probe position detection mechanism of the prober, and the probe contact mark on the electrode is contacted by the prober alignment mechanism. And detecting the contact and confirming the contact. In a wafer test system comprising: a tester that electrically inspects the operation of a semiconductor device formed on a wafer; and a prober that connects each terminal of the tester to an electrode of the semiconductor device, the probe is an electrode of the semiconductor device An electrical contact position detection method for electrically detecting a position in contact with
After moving so that the electrode of the semiconductor device is positioned directly below the probe, the wafer stage is raised with respect to the probe to confirm that all of the probes are in contact with the electrode of the semiconductor device A method of automatically inquiring an operator to perform cleaning of the probe before performing the operation.   When the process of confirming that all of the probes have contacted the electrodes of the semiconductor device was unsatisfactory, after cleaning the probe, again that all of the probes had contacted the electrodes of the semiconductor device. The method according to claim 11, wherein a confirmation process is performed. A wafer test system comprising a tester for electrically inspecting the operation of a semiconductor device formed on a wafer, and a prober for connecting each terminal of the tester to an electrode of the semiconductor device,
The tester and the prober are connected by a communication path,
In order to electrically detect the position where the probe contacts the electrode of the semiconductor device, the wafer stage is raised with respect to the probe after the electrode of the semiconductor device is moved so as to be positioned directly under the probe. The tester notifies the prober via the communication path when the probe first contacts the electrode of the semiconductor device and when all of the probes contact the electrode of the semiconductor device, A wafer test system, wherein the prober stores a height position at each time point.   The prober determines whether a difference between a height position at which the probe first contacts the electrode of the semiconductor device and a height position at which all the probes contact the electrode of the semiconductor device is within an allowable range. The wafer test system according to claim 13, wherein the wafer test system judges and outputs a warning when out of an allowable range. The prober includes a needle position detection mechanism that detects a height position of the probe,
The height position at which the probe first contacts the electrode of the semiconductor device, the height position at which all of the probes contact the electrode of the semiconductor device, and the height position of the probe detected by the needle position detection mechanism The wafer test system according to claim 13, wherein the wafer test system determines whether the difference is within an allowable range and outputs a warning when the difference is outside the allowable range.   The wafer test system according to claim 13, wherein the process of electrically detecting the position where the probe contacts the electrode of the semiconductor device is performed under environmental conditions when the operation of the semiconductor device is electrically inspected. The prober includes a needle position detection mechanism that detects a height position of the probe, and an alignment mechanism that detects an electrode position by imaging an electrode of the semiconductor device,
The process of electrically detecting the position where the probe contacts the electrode of the semiconductor device, the probe is brought into contact with the electrode of the semiconductor device based on the height position of the probe detected by the needle position detection mechanism, The wafer test system according to claim 13, which is performed after the alignment mechanism detects a contact mark of the probe on the electrode and performs a process of confirming the contact. The prober includes a cleaning mechanism for cleaning the probe;
14. The wafer test system according to claim 13, wherein an operator is automatically inquired about cleaning of the probe before performing a process of electrically detecting a position where the probe contacts the electrode of the semiconductor device. The prober includes a needle position detection mechanism that detects a height position of the probe,
14. The highest position when the wafer stage is raised so that the probe first contacts the electrode of the semiconductor device is set with reference to the height position of the probe detected by the needle position detection mechanism. The wafer test system described in 1.   The highest position when raising the wafer stage so that all of the probes are in contact with the electrodes of the semiconductor device is set with reference to the height position when the probes first contact the electrodes of the semiconductor device. The wafer test system according to claim 13. A wafer test system comprising a tester for electrically inspecting the operation of a semiconductor device formed on a wafer, and a prober for connecting each terminal of the tester to an electrode of the semiconductor device,
After moving so that the electrode of the semiconductor device is positioned directly below the probe, the wafer stage is raised with respect to the probe to confirm that all of the probes are in contact with the electrode of the semiconductor device A wafer test system characterized in that the test is performed under environmental conditions when the operation of the semiconductor device is electrically inspected. A wafer test system comprising a tester for electrically inspecting the operation of a semiconductor device formed on a wafer, and a prober for connecting each terminal of the tester to an electrode of the semiconductor device,
The prober includes a needle position detection mechanism that detects a height position of the probe, and an alignment mechanism that detects an electrode position by imaging an electrode of the semiconductor device, and the electrode of the semiconductor device is directly below the probe. The needle position detecting mechanism before performing the process of raising the wafer stage relative to the probe and confirming that all of the probes are in contact with the electrodes of the semiconductor device. The probe is brought into contact with the electrode of the semiconductor device based on the detected height position of the probe, the contact mechanism of the probe on the electrode is detected by the alignment mechanism, and the contact is confirmed. A featured wafer test system. A wafer test system comprising a tester for electrically inspecting the operation of a semiconductor device formed on a wafer, and a prober for connecting each terminal of the tester to an electrode of the semiconductor device,
The prober includes a cleaning mechanism for cleaning the probe, and after the electrode of the semiconductor device has moved so as to be positioned directly below the probe, the wafer stage is raised with respect to the probe, and all of the probes are The wafer test system automatically inquires the operator of the execution of cleaning of the probe before performing the process of confirming that the electrode contacts the electrode of the semiconductor device.   When the process of confirming that all of the probes have contacted the electrodes of the semiconductor device was unsatisfactory, after cleaning the probe, again that all of the probes had contacted the electrodes of the semiconductor device. 24. The wafer test system according to claim 23, wherein a confirmation process is performed. A tester for electrically inspecting the operation of a semiconductor device formed on a wafer by connecting each terminal to an electrode of the semiconductor device via a prober,
In order to electrically detect the position where the probe contacts the electrode of the semiconductor device, the wafer stage is raised with respect to the probe after the electrode of the semiconductor device is moved so as to be positioned directly under the probe. And detecting when the probe first contacts the electrode of the semiconductor device and when all of the probes contact the electrode of the semiconductor device. A prober for connecting each terminal of a tester to an electrode of the semiconductor device in order to electrically inspect the operation of the semiconductor device formed on the wafer,
Connected to the tester via a communication path,
In order to electrically detect the position where the probe contacts the electrode of the semiconductor device, the wafer stage is raised with respect to the probe after the electrode of the semiconductor device is moved so as to be positioned directly under the probe. When the probe first contacts the electrode of the semiconductor device and according to the notification from the tester when all of the probes contact the electrode of the semiconductor device, the height position at each time point is set. A prober characterized by memorization.

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