JP2007073879A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a raw material gas from contacting with a circumference edge of a substrate by covering the circumference edge of the substrate with a cover member in a film forming process of the substrate, and to surely prevent film formation to the circumference edge of the substrate by preventing thermal deformation of the cover member. <P>SOLUTION: The substrate processing apparatus includes a processing chamber 2 for processing the substrate, a support base 4 for supporting the substrate 3 in the processing chamber; a heating means 6 for heating the substrate 3, a first cover member 48 for covering the circumference edge of the substrate placed on the support base, and a second cover member 49 placed on the first cover member. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for producing a semiconductor device by generating an oxide film, a CVD film or the like on a substrate such as a silicon wafer.

  One of the steps of manufacturing a semiconductor device from a substrate such as a silicon wafer is a step of forming a thin film on the surface of the substrate, and a method of generating a thin film is a chemical vapor deposition method (CVD method).

  In the CVD method, a substrate is housed in an airtight processing chamber, the substrate is heated, a source gas is allowed to flow into the processing chamber while maintaining a predetermined processing pressure, and the source gas is brought into contact with the heated substrate. A film is formed on the surface.

  When the substrate is transported in the subsequent process of the film processing, the peripheral edge of the substrate is used for handling. The back surface of the substrate is in physical contact with the holding member when the substrate is held. If the peripheral edge of the substrate is exposed, the raw material comes into contact with the raw material, so that a film is formed. On the back surface of the substrate, the raw material gas may be introduced. In this case, a film is also generated.

  When a film is formed on the peripheral edge and back surface of the substrate, especially on the peripheral edge, when a physical shock is applied during handling or when the substrate is placed on a support stand, etc. When a shock is applied to the film, the film may be peeled off. When the film is peeled off, it may become fine dust (particles), float in the processing chamber or in the apparatus, and adhere to the substrate for contamination. is there.

  For this reason, a cleaning apparatus is provided for cleaning the peripheral portion of the substrate after film formation. However, installing a cleaning device causes an increase in equipment cost, an increase in the number of processes, and a problem of reduced throughput.

  In order to omit the cleaning process, a film forming method has been proposed and implemented in which the peripheral portion of the substrate is covered so that the peripheral portion does not come into contact with the source gas. In this film forming method, the peripheral edge of the substrate is covered with a ring-shaped cover, and the cover is brought into close contact with the peripheral edge so that the source gas does not enter the peripheral edge. Film formation at the peripheral edge is prevented by ensuring that the cover is in close contact with the peripheral edge of the substrate.

  However, since the cover is heated by the heating means in the same manner as the substrate, thermal deformation may occur. When the flatness of the cover is lost due to thermal deformation, a gap is formed between the cover and the substrate, and the raw material is formed in this gap. A gas was sometimes engulfed to form a film.

  In view of such circumstances, the present invention covers the peripheral edge of the substrate with the cover, prevents the source gas from coming into contact with the peripheral edge, prevents thermal deformation of the cover, and reliably prevents film formation on the peripheral edge of the substrate. It is.

  The present invention provides a processing chamber for processing a substrate, a support base for supporting the substrate in the processing chamber, a heating means for heating the substrate, and a first cover member that covers a peripheral portion of the substrate placed on the support base. And a substrate processing apparatus comprising a second cover member placed on the first cover member.

  According to the present invention, a processing chamber for processing a substrate, a support base for supporting the substrate in the processing chamber, a heating means for heating the substrate, and a first portion covering a peripheral portion of the substrate placed on the support base. Since the cover member and the second cover member placed on the first cover member are provided, the flatness of the first cover member is corrected by the weight of the second cover member, and the first cover member Closely adheres to the peripheral edge of the substrate, prevents the source gas from coming into contact with the peripheral edge of the substrate, and exhibits an excellent effect of preventing the formation of a film on the peripheral edge of the substrate.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, an example of a substrate processing apparatus in which the present invention is implemented will be described with reference to FIG.

  FIG. 1 is a schematic view showing an example of a processing furnace of a single wafer processing apparatus in which a remote plasma unit which is a substrate processing apparatus according to an embodiment of the present invention is incorporated.

  As shown in FIG. 1, a processing chamber 2 defined by a processing container 1 is provided with a support 4 for supporting a substrate 3 such as a silicon wafer or a glass substrate. A susceptor 5 is provided on the upper part of the support base 4 as a mounting plate that constitutes a part of the support and on which the substrate is mounted. A heater 6 serving as a heating means is provided inside the support base 4, and the substrate 3 placed on the susceptor 5 is heated by the heater 6. The heater 6 is controlled by a temperature controller 7 so that the temperature of the substrate 3 becomes a predetermined temperature.

  A substrate rotating unit 8 as a substrate rotating mechanism is provided outside the processing chamber 2, and the substrate rotating unit 8 is rotated by the substrate rotating unit 8 so that the substrate 3 is rotated via the susceptor 5. It has become. By rotating the substrate 3, processing to the substrate described later is performed quickly and uniformly within the substrate surface. An elevating mechanism 9 is provided outside the processing chamber 2, and the elevating mechanism 9 allows the support table 4 to be raised and lowered in the processing chamber 2.

  In the upper part of the processing chamber 2, a shower head 12 having a large number of holes 11 is provided as a gas ejection means so as to face the susceptor 5. The shower head 12 is divided into two chambers, that is, a source gas supply unit 13 and an activation gas supply unit 14, and the source gas supply unit 13 and the activation gas supply unit 14, which are divided, are described later. The gas and the activation gas can be separately ejected to the substrate 3 in a shower shape. The source gas supply unit 13 and the activation gas supply unit 14 constitute separate supply ports for supplying the source gas and the activation gas to the substrate 3 respectively. Note that the source gas and the activation gas are not mixed in the shower head 12.

  A first raw material supply unit 15 that supplies a first raw material that is a liquid raw material is provided outside the processing chamber 2, and a liquid raw material supply pipe 16 is connected to the first raw material supply unit 15. The liquid raw material supply pipe 16 is connected to a vaporizer 18 for vaporizing the first raw material via a liquid flow rate control device 17 as a flow rate controller for controlling the liquid supply flow rate of the first raw material. A source gas supply pipe 19 is connected to the vaporizer 18, and the source gas supply pipe 19 is connected to the source gas supply unit 13 via a valve 21. As the first raw material, for example, an organometallic material that is liquid at room temperature, that is, an organometallic liquid raw material is used.

  An inert gas supply unit 22 that supplies an inert gas as a non-reactive gas is provided outside the processing chamber 2, and an inert gas supply pipe 23 is connected to the inert gas supply unit 22. Yes. The inert gas supply pipe 23 is connected to the source gas supply pipe 19 via a gas flow rate control device 24 as a flow rate controller for controlling the supply flow rate of the inert gas and a valve 25. As the inert gas, for example, Ar, He, N2 or the like is used.

  When the first raw material vaporized by the vaporizer 18, that is, the raw material gas is not supplied from the raw material gas supply pipe 19 to the raw material gas supply unit 13, the valve 21 is closed, the valve 54 is opened, and the raw material gas bypass pipe The source gas is flowed to 52. At this time, by opening the valve 25 and supplying an inert gas from the inert gas supply pipe 23, a pipe from the valve 21 of the source gas supply pipe 19 to the source gas supply unit 13, the interior of the shower head 12 is provided. It is possible to remove the adsorbed source gas.

  In addition, a remote plasma unit 26 is provided outside the processing chamber 2 as an activation mechanism for activating gas with plasma. A gas supply pipe 27 is provided on the upstream side of the remote plasma unit 26. The gas supply pipe 27 includes a second raw material supply unit 28 for supplying a second raw material, a plasma ignition gas supply unit 29 for supplying a gas for generating plasma, and a cleaning gas supply unit 31 for supplying a cleaning gas. These are connected via supply pipes 32, 33, and 34, respectively, and each gas is supplied to the remote plasma unit 26. The supply pipes 32, 33, and 34 are provided with gas flow rate control devices 35, 36, and 37 and valves 38, 39, and 40 for controlling the supply flow rates of the respective gases.

  The supply of each gas can be controlled by opening and closing the valves 38, 39, and 40 provided in the supply pipes 32, 33, and 34, respectively. As the second raw material, for example, a gas containing oxygen atoms (O), a gas containing hydrogen atoms (H), or a gas containing nitrogen atoms (N) is used. For example, argon (Ar) gas is used as the plasma ignition gas. As the cleaning gas, for example, a gas containing fluorine atoms (F) or a gas containing chlorine atoms (Cl) is used.

  An activated gas supply pipe 41 is provided on the downstream side of the remote plasma unit 26. The activated gas supply pipe 41 is connected to the activated gas supply unit 14 through a valve 42, and the activated gas supply unit 14 includes a gas containing a second raw material activated by the remote plasma unit 26, that is, an activated gas. Gasification gas is supplied. The supply of the activated gas can be controlled by opening and closing the valve 42 provided in the activated gas supply pipe 41.

  An exhaust port 43 is provided in the lower portion of the side wall of the processing vessel 1, and a vacuum pump 44 as an exhaust device and an exhaust pipe 45 communicating with an abatement device (not shown) are connected to the exhaust port 43. The exhaust pipe 45 is provided with a pressure controller 46 for controlling the pressure in the processing chamber 2 and a raw material recovery trap 47 for recovering the raw material. The exhaust port 43 and the exhaust pipe 45 constitute an exhaust system.

  A first cover plate 48 covering the peripheral edge of the substrate 3 is provided on the support base 4, and a first cover plate 48 is attached on the first cover plate 48 so as to adhere to the substrate 3. Two cover plates 49 are placed.

  Each of the first cover plate 48 and the second cover plate 49 is a ring-shaped plate, and the inner diameter of the second cover plate 49 is equal to or larger than the inner diameter of the first cover plate 48. It has become.

  The first cover plate 48 is preferably made of a material having low rigidity so as to be in close contact with the substrate 3, and a material that is difficult to be thermally deformed is selected, and is manufactured by a processing method and heat treatment that do not cause residual strain. The second cover plate 49 has a certain weight so as to press the first cover plate 48 against the substrate 3. For example, a high-density material is used for the first cover plate 48. Alternatively, a shape that increases the plate thickness is adopted. Further, in order to make the first cover plate 48 follow the surface of the substrate 3, the second cover plate 49 is made to be highly rigid. For example, a material having a large Young's modulus is selected, or the plate thickness is increased. A shape that increases the second moment is selected.

  In addition, a protrusion 62 (described later) is formed on the lower surface of the second cover plate 49 and is placed on the first cover plate 48 via the protrusion 62. The number of the protrusions 62 is at least 3 or more, preferably 3, and is formed at a circumferentially divided position. When the second cover plate 49 is placed on the first cover plate 48 via the protrusion 62, the second cover plate 49 causes the first cover plate 48 to be in close contact with the substrate 3. The required weight is sufficient, and the rigidity of the second cover plate 49 is not necessarily required.

  The first cover plate 48 and the second cover plate 49 also function as rectifying plates, and adjust the flow of gas supplied from the shower head 12.

  The gas supplied from the shower head 12 to the substrate 3 flows in the radial direction of the substrate 3, passes over the second cover plate 49, and passes between the second cover plate 49 and the side wall of the processing container 1. As described above, the air is exhausted from the exhaust port 43.

  When the support 4 is lowered by the elevating mechanism 9, the first cover plate 48 and the second cover plate 49 are supported by a shelf 51 provided on the inner wall of the processing container 1, and the substrate 3, the first cover plate 48 and the second cover plate 49 are separated from each other, so that the substrate 3 can be loaded and unloaded as described later.

  The exhaust gas pipe 45 is connected to the raw material gas bypass pipe 52 and the activated gas bypass pipe so that the raw material gas supply pipe 19 is in front of the raw material recovery trap 47 and the activated gas supply pipe 41 is behind the raw material recovery trap 47. 53, the source gas bypass pipe 52 and the activated gas bypass pipe 53 are provided with valves 54 and 55, respectively.

  A substrate loading / unloading port 56 is provided on the side wall of the processing container 1 opposite to the exhaust port 43, and the substrate loading / unloading port 56 is opened and closed by a gate valve 57 serving as a gate valve, and from the substrate loading / unloading port 56. The substrate 3 can be loaded into and unloaded from the processing chamber 2.

  The valves 25, 21, 54, 55, 42, 38, 39, 40, the flow control devices 24, 17, 35, 36, 37, the temperature controller 7, the pressure controller 46, the vaporizer 18, and the remote plasma The main controller 58 controls the operation of each part of the substrate processing apparatus such as the unit 26, the substrate rotating unit 8, and the lifting mechanism 9.

  Next, a method for depositing a thin film on a substrate as one process for manufacturing a semiconductor device will be described.

  Hereinafter, using an organometallic liquid raw material that is liquid at room temperature, a CVD (Chemical Vapor Deposition) method, particularly a MOCVD (Metal Organic Chemical Vapor Deposition) method, or an ALD (Atomic Layer Deposition) method on a metal or film on a metal substrate. A case where a thin film such as an oxide film is formed will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the main controller 58.

  When the gate valve 57 is opened and the substrate loading / unloading port 56 is opened while the support table 4 is lowered to the substrate transfer position, the substrate 3 is loaded into the processing chamber 2 by a substrate transfer machine (not shown). (Substrate loading step). After the substrate 3 is loaded into the processing chamber 2, the gate valve 57 is closed. The support 4 is raised from the substrate transfer position to the substrate processing position above it. Meanwhile, the substrate 3 is placed on the susceptor 5 (substrate placing step).

  When the support 4 reaches the substrate processing position, the substrate 3 is rotated by the substrate rotating unit 8. In addition, power is supplied to the heater 6 and the substrate 3 is uniformly heated to a predetermined processing temperature (substrate heating step). At the same time, the processing chamber 2 is evacuated by the vacuum pump 44 and controlled so as to have a predetermined processing pressure (pressure adjusting step). When the substrate 3 is transported, when the substrate is heated, or when the pressure is adjusted, the valve 25 provided in the inert gas supply pipe 23 is opened and the processing is performed by the inert gas supply unit 22. An inert gas always flows into the chamber 2. Thereby, adhesion of particles or metal contaminants to the substrate 3 can be prevented.

  When the temperature of the substrate 3 and the pressure of the processing chamber 2 reach a predetermined processing temperature and a predetermined processing pressure, respectively, and stabilize, the source gas is supplied to the processing chamber 2. That is, the organometallic liquid raw material as the first raw material supplied from the first raw material supply unit 15 is flow-controlled by the liquid flow control device 17 and supplied to the vaporizer 18 to be vaporized. The valve 21 provided in the source gas supply pipe 19 is opened, and the vaporized first source, that is, source gas, is supplied onto the substrate 3 via the source gas supply unit 13. At this time, the valve 25 may be closed, but a case will be described in which the valve 25 is used in an open state in order to always flow the inert gas from the inert gas supply unit 22 as a diluent gas. The raw material gas and the inert gas are mixed in the raw material gas supply pipe 19 and guided to the raw material gas supply unit 13 as a mixed gas, and pass through a large number of holes 11 onto the substrate 3 on the susceptor 5. It is supplied in a shower form (raw material gas supply process). The source gas is easily diffused by being diluted with an inert gas.

  After the supply of the source gas is performed for a predetermined time, the valve 21 is closed, and the supply of the source gas to the substrate 3 is stopped. At this time, since the valve 25 remains open, the supply of the inert gas from the inert gas supply unit 22 to the processing chamber 2 is maintained. Thereby, the processing chamber 2 is purged with the inert gas, and the residual gas in the processing chamber 2 is removed (purge process).

  At this time, the valve 54 provided in the source gas bypass pipe 52 is opened, the source gas is exhausted from the source gas bypass pipe 52 so as to bypass the processing chamber 2, and the source gas from the vaporizer 18 is exhausted. It is preferable not to stop the gas supply. Since it takes time to vaporize the liquid raw material and stably supply the vaporized raw material gas, it is allowed to bypass the processing chamber 2 without stopping the supply of the raw material gas from the vaporizer 18. In this case, in the next source gas supply step, the source gas can be immediately supplied to the substrate 3 by simply switching the flow.

  After purging the processing chamber 2 for a predetermined time, an activation gas is supplied to the processing chamber 2. That is, the valve 39 is opened, and the Ar gas as the plasma ignition gas supplied from the plasma ignition gas supply unit 29 is flow-controlled by the gas flow control device 36 and supplied to the remote plasma unit 26. , Ar plasma is generated. After the Ar plasma is generated, the valve 38 is opened, the second raw material supplied from the second raw material supply unit 28 is flow-controlled by the gas flow rate control device 35, and the remote plasma in which Ar plasma is generated. Supplyed to the unit 26, the second raw material is activated by the plasma. Thereby, reactive species such as radicals (active species) are generated. The valve 42 is opened, and a gas obtained by activating the second raw material with plasma from the remote plasma unit 26, that is, an activated gas is supplied to the shower head 12, and is supplied onto the substrate 3 from the activated gas supply unit 14. Supplied (activated gas supply step). At this time, the valve 25 remains open, and the processing chamber 2 is always supplied with the inert gas from the inert gas supply unit 22.

  After supplying the activation gas for a predetermined time, the valve 42 is closed and the supply of the activation gas to the substrate 3 is stopped. Also at this time, since the valve 25 remains open, the supply of the inert gas from the inert gas supply unit 22 to the processing chamber 2 is maintained. Thereby, the processing chamber 2 is purged with the inert gas, and the residual gas in the processing chamber 2 is removed (purge process).

  At this time, the valve 55 is opened, the activated gas is exhausted from the activated gas bypass pipe 53 so as to bypass the processing chamber 2, and the supply of the activated gas from the remote plasma unit 26 is not stopped. It is preferable to do so. Since it takes time to stably supply the Ar plasma, and further, the activated gas activated by the Ar plasma, the process chamber 2 can be changed without stopping the supply of the activated gas from the remote plasma unit 26. If the flow is made to bypass, the activated gas can be immediately supplied to the substrate 3 by simply switching the flow in the next activated gas supply step.

  After purging the processing chamber 2 for a predetermined time, the valve 54 is closed, the valve 21 is opened again, and the vaporized first raw material, that is, the raw material gas is added to the shower head 12 together with the inert gas. The raw material gas is supplied onto the substrate 3 through the raw material gas supply unit 13 to perform a raw material gas supply step.

  Forming a thin film with a predetermined film thickness on the substrate 3 by a cycle process in which the source gas supply process, the purge process, the activation gas supply process, and the purge process are performed as a cycle, and the cycle is repeated a plurality of times. (Thin film forming step).

  After completion of the thin film formation process on the substrate 3, the rotation of the substrate 3 by the substrate rotating unit 8 is stopped, and the processed substrate 3 is carried out of the processing chamber 2 in the reverse procedure of the substrate carrying-in process (substrate carrying-out process). ).

  In the case where the thin film forming process is performed by the CVD method, the substrate temperature is controlled so as to be a temperature range in which the source gas is self-decomposed. In this case, in the raw material gas supply step, the raw material gas is thermally decomposed, and a thin film of about several to several tens of liters (several to several tens of atomic layers) is formed on the substrate 3. During this time, since the substrate 3 is kept at a predetermined temperature by the heater 6 while rotating, a uniform film can be formed over the substrate surface. In the activation gas supply step, carbon atoms (C), hydrogen atoms (H), etc. are formed from a thin film of about several to several tens of liters (several to several tens of atomic layers) formed on the substrate 3 by the activation gas. Impurities are removed. Also during this time, the substrate 3 is kept at a predetermined temperature by the heater 6 while rotating, so that impurities can be quickly and uniformly removed from the thin film.

  Further, when the thin film forming process is performed by the ALD method, the substrate temperature is controlled so as to be a temperature range in which the source gas does not self-decompose. In this case, in the source gas supply step, the source gas is adsorbed on the substrate 3 without being thermally decomposed. During this time, since the substrate 3 is kept at a predetermined temperature by the heater 6 while rotating, the raw material can be adsorbed uniformly over the substrate surface. In the activated gas supply step, a raw material adsorbed on the substrate 3 and the activated gas react to form a thin film of about 1 mm or less (1/2 to 1/3 atomic layer) on the substrate 3. The During this time, the substrate 3 is kept at a predetermined temperature by the heater 6 while rotating, so that a uniform film can be formed over the substrate surface. At this time, impurities such as carbon atoms (C) and hydrogen atoms (H) mixed in the thin film can be eliminated by radical components contained in the activation gas.

  In the processing furnace according to the embodiment of the present invention, the processing conditions for processing the substrate by the CVD method include, for example, a processing temperature of 350 ° C. to 500 ° C. and a processing pressure of 50 Pa to 50 H when forming a HfO 2 film. 200 Pa, first raw material Hf- (MMP) 4 (tetrakis (1-methoxy-2-methyl-2-propoxy) -hafnium: Hf (OC (CH 3) 2 CH 2 OCH 3) 4), supply flow rate 0.01 sccm to 0. Examples are 1 sccm, second raw material O2, and a supply flow rate of 500 sccm to 1500 sccm.

  In the processing furnace according to the embodiment of the present invention, the processing conditions for processing the substrate by the ALD method include, for example, when forming a Ru film, a processing temperature of 200 ° C. to 300 ° C., a processing pressure of 20 Pa to 200 Pa, first raw material DER (2,4 dimethylpentadienylethylcyclopentadienylruthenium: Ru (C2 H5 C5 H4) ((CH3) C5 H5)), supply flow rate 0.01 sccm to 0.1 sccm, second raw material Examples are O2 and a supply flow rate of 500 sccm to 1500 sccm.

  Next, in FIG. 2 to FIG. 6, the relationship between the substrate 3, the first cover plate 48, and the second cover plate 49 will be described.

  FIG. 2 is an enlarged view of part A in FIG. 1. On the lower surface of the first cover plate 48, circular protrusions 61 are continuously formed all around as shown in FIG. The protrusion 61 is in close contact with the peripheral edge of the substrate 3. When the protrusion 61 is in close contact with the peripheral portion of the substrate 3, the flow of the raw material gas is blocked, and the raw material gas is prevented from flowing into the peripheral portion. Further, as shown in FIG. 4, a required number of protrusions 62 are formed on the circumference of the second cover plate 49, for example, three or more, preferably three. Further, the protrusion 62 is arranged at a circumferentially divided position, and the circumference on which the protrusion 62 is formed is concentric and the same diameter as the protrusion 61, and the first cover plate 48 has In a state where the second cover plate 49 is placed, the protrusion 62 overlaps the protrusion 61 (see FIG. 4).

  As described above, the weight of the second cover plate 49 is set so that the protrusions 61 are brought into close contact with the surface of the substrate 3, and the first cover plate 48 is configured so as to be in contact with the second cover plate 49. The rigidity of the first cover plate 48 is set to be low so as to be deformed by the weight of.

  The first cover plate 48 is easily deformable, for example, quartz having a low Young's modulus as a material, and its cross-sectional shape is made thin to reduce the secondary moment of the cross section. The second cover plate 49 is made of a material having a large density and specific gravity in order to increase the weight, for example, stainless steel. The second cover plate 49 preferably has a higher rigidity than the first cover plate 48, and a material having a large Young's modulus with respect to the first cover plate 48 is selected. For example, the plate thickness is increased to increase the second moment.

  The weight of the second cover plate 49 is transmitted to the first cover plate 48 through the protrusions 62. When the number of the protrusions 62 is 3, the weight is evenly and reliably from the protrusions 62. Is transmitted to the first cover plate 48. Furthermore, since the protrusion 62 is on the protrusion 61, the weight of the second cover plate 49 is transmitted to the protrusion 61 in a concentrated manner.

  Thus, even if the substrate 3 is deformed by heating (FIG. 6 shows an example in which the substrate 3 is curved so that the central portion is raised by heating), the first cover plate 48 is deformed by heating. Also, the protrusion 61 is brought into close contact with the peripheral edge of the substrate 3 by the weight of the second cover plate 49.

  The operation of the second cover plate 49 will be described in comparison with the conventional example shown in FIG. Conventionally, only the first cover plate 48 is placed on the substrate 3.

  In FIG. 7, when the substrate 3 is heated by the susceptor 5, the first cover plate 48 is also heated at the same time. When the substrate 3 and the first cover plate 48 are heated, the substrate 3 and the first cover plate 48 are thermally deformed. If the substrate 3 and the first cover plate 48 are irregularly deformed, A gap 63 is formed between them, and the source gas enters the peripheral portion of the substrate 3 from the gap 63, and an unnecessary film is generated on the peripheral portion.

  FIG. 6 shows the case of the present invention. Even when the substrate 3 and the first cover plate 48 are thermally deformed, the second cover plate 49 presses the first cover plate 48 against the substrate 3. . Since the first cover plate 48 is configured to be easily deformed, the first cover plate 48 follows the shape of the substrate 3, and the protrusions 61 are in close contact with the substrate 3. Accordingly, due to the close contact between the protrusion 61 and the substrate 3, the gas flow from the central portion toward the peripheral portion is blocked, and the formation of a film on the peripheral portion of the substrate 3 is prevented.

(Appendix)
The present invention includes the following embodiments.

  (Additional remark 1) The processing chamber which processes a board | substrate, the support stand which supports a board | substrate in this processing chamber, the heating means which heats a board | substrate, and the 1st cover member which covers the peripheral part of the board | substrate mounted in the said support stand And a second cover member placed on the first cover member.

  (Supplementary Note 2) A step of bringing the substrate into the processing chamber, and a first cover member that is brought into contact with the outer peripheral portion of the upper surface of the substrate so as to cover the outer peripheral portion of the substrate, and a second cover member is provided on the first cover member A substrate processing method and a semiconductor device manufacturing method, comprising: a step of heating and processing the substrate in a state of being processed; and a step of carrying out the processed substrate from the processing chamber.

  (Appendix 3) (Appendix 1) In (Appendix 2), the first cover member is made of a material having a Young's modulus smaller than that of the second cover member.

  (Appendix 4) (Appendix 1) In (Appendix 2), the first cover member is made of a material that is more easily deformed than the second cover member.

  (Appendix 5) (Appendix 1) In (Appendix 2), the second cover member is made of a material having a density higher than that of the first cover member.

  (Appendix 6) In (Appendix 1) and (Appendix 2), the weight of the second cover member is made larger than that of the first cover member.

  (Appendix 7) In (Appendix 1) (Appendix 2), a plurality of protrusions are provided on the back surface of the second cover member.

  (Supplementary Note 8) In (Supplementary Note 7), the plurality of protrusions are arranged at portions corresponding to contact portions between the first cover member and the substrate.

  (Appendix 9) In (Appendix 1) and (Appendix 2), the second cover member has a weight that allows the first cover member to follow the substrate surface.

It is a schematic block diagram which shows embodiment of this invention. It is the A section enlarged view of FIG. It is a back view of the 1st cover plate in embodiment of this invention. It is a back view of the 2nd cover plate in embodiment of this invention. It is a B arrow line view of FIG. It is CC arrow line view of FIG. It is explanatory drawing of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Processing container 2 Processing chamber 3 Board | substrate 4 Support stand 5 Susceptor 6 Heater 12 Shower head 48 1st cover plate 49 2nd cover plate 61 Projection 62 Projection 63 Gap

Claims (1)

  A processing chamber for processing the substrate; a support base for supporting the substrate in the processing chamber; a heating means for heating the substrate; a first cover member for covering a peripheral edge of the substrate placed on the support base; A substrate processing apparatus comprising: a second cover member placed on one cover member.

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