JP2007027585A5 - - Google Patents

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Publication number
JP2007027585A5
JP2007027585A5 JP2005210623A JP2005210623A JP2007027585A5 JP 2007027585 A5 JP2007027585 A5 JP 2007027585A5 JP 2005210623 A JP2005210623 A JP 2005210623A JP 2005210623 A JP2005210623 A JP 2005210623A JP 2007027585 A5 JP2007027585 A5 JP 2007027585A5
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Japan
Prior art keywords
light emitting
phosphor layer
sealing member
light
emitting diode
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JP2005210623A
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Japanese (ja)
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JP4747704B2 (en
JP2007027585A (en
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Priority to JP2005210623A priority Critical patent/JP4747704B2/en
Priority claimed from JP2005210623A external-priority patent/JP4747704B2/en
Priority to US11/220,903 priority patent/US7842526B2/en
Publication of JP2007027585A publication Critical patent/JP2007027585A/en
Publication of JP2007027585A5 publication Critical patent/JP2007027585A5/ja
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Publication of JP4747704B2 publication Critical patent/JP4747704B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (6)

発光ダイオード素子を搭載する素子搭載基板と、
前記素子搭載基板上で前記発光ダイオード素子を封止し、側面が素子搭載基板の側面と連続的に形成されたガラスからなる封止部材と、
前記封止部材の光出射面側に設けられた蛍光体層と、
前記封止部材の前記蛍光体層が設けられていない領域から前記発光ダイオード素子の放射光が出射するのを防ぐために、前記素子搭載基板の側面から連続的に前記封止部材の側面の少なくとも一部を覆う白色の反射枠を有することを特徴とする蛍光体層付き発光装置。 An element mounting board on which a light emitting diode element is mounted;
A sealing member made of glass, wherein the element to seal the light emitting diode element is mounted on the substrate, the side surface is formed continuously with the side surface of the element mounting substrate,
A phosphor layer provided on the light exit surface side of the sealing member;
In order to prevent the emitted light of the light emitting diode element from being emitted from the region where the phosphor layer of the sealing member is not provided , at least one of the side surfaces of the sealing member is continuously provided from the side surface of the element mounting substrate. A light emitting device with a phosphor layer, characterized by having a white reflective frame that covers the part . 前記反射枠には、前記蛍光体層から外部放射された光を光学制御する反射面が形成されている請求項１に記載の発光装置。 Wherein the reflective frame, the light emitting device according the light externally emitted from the phosphor layer to claim 1, the reflecting surface of the optical control are formed. 前記発光ダイオード素子は、前記封止部材において複数個配置されている請求項１または２に記載の蛍光体層付き発光装置。 The light emitting diode element, a phosphor layer with the light emitting device according to claim 1 or 2 are a plurality arranged in said sealing member. 前記発光ダイオード素子のｐ側電極が透明導電性酸化物である請求項１に記載の蛍光体層付き発光装置。   The light emitting device with a phosphor layer according to claim 1, wherein the p-side electrode of the light emitting diode element is a transparent conductive oxide. 光取出側に蛍光体層を有する発光ダイオード素子を備えた蛍光体層付き発光装置の製造方法であって、
素子搭載部上に搭載された発光ダイオード素子をガラスからなる封止部材によって封止する工程と、
前記封止部材の光出射面側に蛍光体層を形成する工程と、
前記封止部材の前記蛍光体層が設けられていない領域から前記発光ダイオード素子の放射光が出射するのを防ぐために前記封止部材上にカバーを形成する工程とを備えることを特徴とする蛍光体層付き発光装置の製造方法。 A method for manufacturing a light-emitting device with a phosphor layer including a light-emitting diode element having a phosphor layer on a light extraction side,
Sealing the light-emitting diode element mounted on the element mounting portion with a sealing member made of glass;
Forming a phosphor layer on the light emitting surface side of the sealing member;
And a step of forming a cover on the sealing member in order to prevent the emitted light of the light emitting diode element from being emitted from a region of the sealing member where the phosphor layer is not provided. Manufacturing method of light emitting device with body layer. 前記封止する工程は、共通の素子搭載部上に搭載された複数の前記発光ダイオード素子を共通のガラス封止部材で封止する工程を有し、
前記蛍光体層を形成する工程は、前記共通のガラス封止部材上に共通の蛍光体層を形成する工程を有する請求項５に記載の蛍光体層付き発光装置の製造方法。 The step of sealing includes a step of sealing the plurality of light emitting diode elements mounted on a common element mounting portion with a common glass sealing member,
The method of manufacturing a light emitting device with a phosphor layer according to claim 5 , wherein the step of forming the phosphor layer includes a step of forming a common phosphor layer on the common glass sealing member.
JP2005210623A 2004-09-09 2005-07-20 Method for manufacturing light emitting device with phosphor layer Expired - Fee Related JP4747704B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005210623A JP4747704B2 (en) 2005-07-20 2005-07-20 Method for manufacturing light emitting device with phosphor layer
US11/220,903 US7842526B2 (en) 2004-09-09 2005-09-08 Light emitting device and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005210623A JP4747704B2 (en) 2005-07-20 2005-07-20 Method for manufacturing light emitting device with phosphor layer

Publications (3)

Publication Number Publication Date
JP2007027585A JP2007027585A (en) 2007-02-01
JP2007027585A5 true JP2007027585A5 (en) 2007-11-01
JP4747704B2 JP4747704B2 (en) 2011-08-17

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JP2005210623A Expired - Fee Related JP4747704B2 (en) 2004-09-09 2005-07-20 Method for manufacturing light emitting device with phosphor layer

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JP (1) JP4747704B2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5104490B2 (en) * 2007-04-16 2012-12-19 豊田合成株式会社 Light emitting device and manufacturing method thereof
KR101423929B1 (en) * 2007-12-26 2014-08-04 삼성전자주식회사 Light Emitting Diode device
DE102008014927A1 (en) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Method for producing a plurality of radiation-emitting components and radiation-emitting component
JP5109770B2 (en) * 2008-04-03 2012-12-26 豊田合成株式会社 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
JP5287643B2 (en) * 2009-09-29 2013-09-11 豊田合成株式会社 Optical device manufacturing method and optical device
KR101775659B1 (en) * 2010-12-30 2017-09-06 서울반도체 주식회사 Light emitting device having wavelength converting layer
KR101875435B1 (en) * 2011-10-05 2018-07-06 엘지이노텍 주식회사 Light emitting device package and light unit having the same
WO2013137356A1 (en) * 2012-03-13 2013-09-19 シチズンホールディングス株式会社 Semiconductor light emitting device and method for manufacturing same
KR102329719B1 (en) * 2015-02-23 2021-11-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device and light unit having thereof
EP3843141A1 (en) 2019-12-23 2021-06-30 Gatan, Inc. Electron imaging detector with thermal conduction layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2639999B2 (en) * 1989-03-10 1997-08-13 三洋電機株式会社 Multicolor LED device
JP4077170B2 (en) * 2000-09-21 2008-04-16 シャープ株式会社 Semiconductor light emitting device
JP4081985B2 (en) * 2001-03-02 2008-04-30 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
US7824937B2 (en) * 2003-03-10 2010-11-02 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same

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