JP2007027572A - Semiconductor light emitting device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a dripping in cleavage to prevent a contamination of a light outgoing end face, and securing a high heat transferring efficiency from the light outgoing end face to a heatsink; and to provide its manufacturing method. <P>SOLUTION: A laminate including a first clad 11, an active layer 12, and a second clad 13 having a current confinement structure is formed on a substrate 10; and a first conductive layer 16 is formed on the upper layer of the laminate by covering up to a corner between the upper surface of the laminate and the light outgoing end face. A semiconductor laser chip LD with a second conductive layer 17 formed on the first conductive layer 16 back away from the light outgoing end face S<SB>L</SB>by the predetermined width so that the first conductive layer 16 is exposed from the corner by the predetermined width is electrically and thermally connected and mounted on the heatsink 20 from the second conductive layer 17 side by a solder layer 21, and the first conductive layer 16 and the solder layer 21 are alloyed in the vicinity of the boundary between the first conductive layer 16 and the solder layer 21 in the region R where the second conductive layer 17 is back away from the corner at the predetermined width. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device in which a semiconductor laser chip is mounted on a heat sink and a manufacturing method thereof.

In recent years, nitride-based III-V compound semiconductors (hereinafter also referred to as “GaN-based semiconductors”) typified by gallium nitride (GaN) are semiconductor light-emitting devices that can emit light from green to blue and further to ultraviolet light. Has attracted a great deal of attention as a material.
Further, a semiconductor laser using this GaN-based semiconductor has been developed, and a light source of an optical pickup device incorporated in an optical disc apparatus that reads (reproduces) information recorded on the optical disc or writes (records) information on the optical disc, It is used in various fields as a light source for other devices.

As a semiconductor light emitting device using a semiconductor laser chip such as a GaN-based semiconductor as described above, for example, Patent Document 1 discloses a structure in which a semiconductor laser chip is mounted on a submount.
In the structure described in Patent Document 1, an element such as a semiconductor laser chip having a light emitting portion on one side surface is provided on a side surface of an insulating substrate on a submount in which an upper surface side conductor layer extends from an end portion of the upper surface of the insulating substrate to a side surface. One side surface protrudes outward from the upper surface and is brazed to the upper surface side conductor layer.

  When driving the semiconductor laser chip as described above to emit laser light, it is necessary to consider suppressing the temperature rise on the light emitting end face side. This is because, when the temperature during driving increases, deterioration of the semiconductor laser chip such as COD (Catastrophic Optical Damage) is promoted. Therefore, it is important to efficiently transport heat generated from the light emitting end face of the semiconductor laser chip to a heat sink such as a submount.

FIG. 4 is a schematic cross-sectional view of a conventional semiconductor laser chip in a cross section parallel to the light emitting direction.
For example, an n-type cladding 101, an active layer 102 having a multiple quantum well structure, and a p-type cladding 103 are stacked on an n-type substrate 100 via an n-type buffer layer (not shown).
The p-type cladding 103 has a current confinement structure (not shown). For example, a part of the upper portion of the p-type cladding 103 is processed into a ridge shape, and an insulating film is formed so as to sandwich the ridge portion.
A stripe-shaped p-electrode 104 along the current confinement structure is formed on the p-type cladding 103 having the current confinement structure, and extends from the p-electrode 104 to the insulating film constituting the current confinement structure. A pad electrode 105 is formed.
An n-electrode 106 is formed on the back side of the n-type substrate 100.

Here, when mounting the heat sink through the solder of the semiconductor laser chip of the above structure from the pad electrode 105 side, in order to increase the efficiency of heat transfer to the heat sink, the corner of the pad electrode 105 and the light emitting end face S _L In order to further increase the solder wettability of the pad electrode, the pad electrode 105 is composed of a metal laminate of, for example, 50 nm thick Ti / 100 nm thick Pt / 300 nm thick Au.

However, when manufacturing a semiconductor laser chip structure pad electrode including a 300nm gold in the surface layer portion as described above is formed up to the corner of the light emitting end face S _L, to form a light emitting facet S _L in the step of cleavage for, who occurs because the growth of the gold, thus causing the end surface contamination such as metal head light emitting end face S _L.
On the other hand, it is difficult to ensure high heat transport efficiency from the light emitting end face of the semiconductor laser chip to the heat sink without suppressing the above-described sagging and causing end face contamination such as metal fogging of the light emitting end face. It was.
JP 2003-318475 A

  The problem to be solved is to secure high heat transport efficiency from the light emitting end face of the semiconductor laser chip to the heat sink, in particular, without suppressing any contamination and causing end face contamination such as metal fogging of the light emitting end face. It is a difficult point.

  In order to solve the above problems, a semiconductor light emitting device of the present invention includes a first conductivity type first clad, an active layer, and a second conductivity type second clad having a current confinement structure on a first conductivity type substrate. A semiconductor laser chip that emits laser light from a light emitting end face of the laminate when a predetermined voltage is applied to the first clad and the second clad, and is formed on the upper layer of the laminate. The first conductive layer is formed so as to cover up to the corner between the upper surface of the laminate and the light emission end face, and the light emission is performed so that the first conductive layer is exposed with a predetermined width from the corner. A semiconductor laser chip in which a second conductive layer is formed on the first conductive layer by retreating from the end face by the predetermined width; a heat sink in which the semiconductor laser chip is mounted from the second conductive layer side; In front of the semiconductor laser chip A solder layer formed by electrically and thermally connecting the first conductive layer and the second conductive layer and the heat sink, and the second conductive layer recedes from the corner with the predetermined width. The first conductive layer and the solder layer are alloyed in the vicinity of the boundary between the first conductive layer and the solder layer in the region that is being processed.

The semiconductor light emitting device has a configuration in which a semiconductor laser chip is mounted on a heat sink via a solder layer.
Here, in the semiconductor laser chip, a stack including a first conductivity type first clad, an active layer, and a second conductivity type second clad having a current confinement structure is formed on a first conductivity type substrate. A semiconductor laser chip that emits laser light from a light emitting end face of a laminate when a predetermined voltage is applied to the first clad and the second clad, and reaches the corner between the upper surface of the laminate and the light emitting end face in the upper layer of the laminate. The first conductive layer is formed so as to cover the first conductive layer, and the first conductive layer recedes from the light emitting end face by a predetermined width so that the first conductive layer is exposed from the corner by a predetermined width. In this configuration, two conductive layers are formed.
The semiconductor laser chip having the above configuration is mounted on the heat sink from the second conductive layer side, and the solder layer electrically and thermally connects the first conductive layer and the second conductive layer of the semiconductor laser chip to the heat sink. is doing.
Here, the first conductive layer and the solder layer are alloyed in the vicinity of the boundary between the first conductive layer and the solder layer in a region where the second conductive layer recedes from the corner with a predetermined width.

  In order to solve the above problems, a method for manufacturing a semiconductor light emitting device includes a second conductivity type first clad, an active layer, and a second conductivity type first structure having a first conductivity type substrate on a first conductivity type substrate. A semiconductor laser chip that emits a laser beam from a light emitting end face of the laminate when a predetermined voltage is applied to the first clad and the second clad. The first conductive layer is formed so as to cover up to the corner between the upper surface of the laminate and the light emitting end surface, and the first conductive layer is exposed with a predetermined width from the corner. Forming a semiconductor laser chip in which a second conductive layer is formed on the first conductive layer by retreating from the light emitting end face by the predetermined width; and soldering the semiconductor laser chip from the second conductive layer side. Layer on the heat sink through the layer And electrically and thermally connecting the first conductive layer and the second conductive layer of the semiconductor laser chip to the heat sink by the solder layer, and the semiconductor laser chip is connected to the second conductive layer. In the step of mounting on the heat sink from the layer side via the solder layer, in the vicinity of the boundary between the first conductive layer and the solder layer in the region where the second conductive layer is recessed from the corner with the predetermined width. The first conductive layer and the solder layer are alloyed.

In the semiconductor light emitting device manufacturing method of the present invention, first, a semiconductor laser chip is formed.
Here, a laminate including a first conductivity type first clad, an active layer, and a second conductivity type second clad having a current confinement structure is formed on the first conductivity type substrate. When a predetermined voltage is applied to the clad, laser light is emitted from the light emitting end face of the laminate, and the upper layer of the laminate is covered up to the corners of the upper face of the laminate and the light emitting end face, so that the first conductive The second conductive layer is formed on the first conductive layer by retreating from the light emitting end face with a predetermined width so that the first conductive layer is exposed with a predetermined width from the corner. The configuration.
Next, the semiconductor laser chip is mounted on the heat sink from the second conductive layer side through the solder layer, and the first and second conductive layers of the semiconductor laser chip and the heat sink are electrically and thermally connected by the solder layer. To do. At this time, the first conductive layer and the solder layer are alloyed in the vicinity of the boundary between the first conductive layer and the solder layer in a region where the second conductive layer has a predetermined width and recedes from the corner.

  The semiconductor light emitting device of the present invention secures high heat transport efficiency from the light emitting end face of the semiconductor laser chip to the heat sink, in particular, without suppressing clogging at the time of cleavage and causing end face contamination such as metal fog on the light emitting end face. it can.

  The method for manufacturing a semiconductor light emitting device of the present invention suppresses dripping at the time of cleavage, and does not cause end face contamination such as metal fogging on the light emitting end face, and particularly high heat transport from the light emitting end face of the semiconductor laser chip to the heat sink. A semiconductor light emitting device capable of ensuring efficiency can be manufactured.

  Embodiments of a semiconductor light emitting device according to the present invention will be described below with reference to the drawings.

FIG. 1A is a schematic cross-sectional view in a cross section parallel to the light emitting direction of a semiconductor light emitting device in which the semiconductor laser chip according to the present embodiment is mounted on a heat sink.
For example, a GaN-based semiconductor laser chip LD, which is a nitride-based III-V compound semiconductor light-emitting element, is mounted on the heat sink 20 via a solder layer 21.

Here, the semiconductor laser chip LD will be described.
2A is a top view of the semiconductor laser chip LD, FIG. 2B is a cross-sectional view taken along line AA ′ in FIG. 2A, and FIG. 2C is FIG. 2A. It is sectional drawing in BB 'inside.
For example, a buffer layer or a contact layer (not shown) made of GaN or the like is formed on an n-type substrate 10 such as GaN, and an n-type AlGaN layer having a thickness of, for example, about 0.5 μm is formed thereon. (First cladding) 11, an active layer 12 having a multiple quantum well (MQW) structure made of InGaN, etc., and a p-type AlGaN layer (second cladding) 13 having a thickness of about 0.5 μm are formed. . In this laminated body, a guide layer, a cap layer, a contact layer, or the like made of GaN or AlGaN is appropriately formed. In the above, silicon (Si) or the like is used as the n-type impurity (donor impurity) doped in the n-type layer, and magnesium (Mg) or zinc (as the p-type impurity (acceptor impurity) doped in the p-type layer is used. Zn) or the like is used.

  The p-type cladding 13 has a current confinement structure. For example, a part of the upper part of the p-type cladding 13 is processed into a ridge shape 13a having a width W1 of 1 to 20 μm and sandwiches the ridge portion. Thus, an insulating film 14 such as silicon oxide is formed.

On the p-type cladding 13 having the current confinement structure, a stripe-shaped first p electrode 15 is formed along the current confinement structure made of, for example, Pd / Pt.
Further, a second p electrode (first conductive layer) 16 is formed from the first p electrode 15 to the upper layer of the insulating film 14 so as to prevent the first p electrode 15 from being peeled off. A pad electrode (second conductive layer) 17 made of a metal laminate of Ti having a thickness of 50 nm / Pt having a thickness of 100 nm / Au having a thickness of 300 nm is formed on the upper layer 16.
On the other hand, an n-electrode 18 is formed on the back side of the n-type substrate 10.

In the semiconductor laser chip of the above structure, when a predetermined voltage is applied to the n electrode 18 and the p-side pad electrode 17, the laser beam L having a wavelength corresponding from the active layer in the light emitting end face S _L to the multiple quantum well structure light emitting Is done.

Here, in the present embodiment, the second p electrode (first conductive layer) 16 is an upper layer of the stacked body from the n-type cladding (first cladding) 11 to the first p electrode 15 and the light emission. coated up to the corner between the end face S _L are formed.
On the other hand, the pad electrode (second conductive layer) 17, the first 2p electrode from the top surface and the corner portion of the light emitting end face S _L of the stack (the first conductive layer) 16, for example, about 5~20μm predetermined so as to expose a width W2, and the light emitting end face S _L and retracted a predetermined width W2, are formed over the 2p electrode (first conductive layer) 16.

The semiconductor laser chip LD having the above configuration is mounted on the heat sink 20 from the pad electrode (second conductive layer) 17 side as shown in FIG.
The solder layer 21 electrically and thermally connects the second p electrode (first conductive layer) 16 and the pad electrode (second conductive layer) 17 of the semiconductor laser chip LD and the heat sink 20. As the solder, general solder such as Sn, AgSn, AuSn, SnPb can be used.

FIG.1 (b) is an enlarged view of the X section in Fig.1 (a).
With the configuration of the semiconductor laser chip LD, the pad electrode (second conductive layer) 17 is retracted with a predetermined width W2, and the second p electrode (first conductive layer) 16 is exposed with a predetermined width W2. In the vicinity of the boundary between the second p electrode (first conductive layer) 16 and the solder layer 21 in the region R where the pad electrode (second conductive layer) 17 has a predetermined width W2 and recedes from the corner, the second p electrode ( The first conductive layer 16 and the solder layer 21 are alloyed.

The semiconductor light emitting device according to this embodiment, a pad electrode (second conductive layer) 17 serving as a sag caused during cleavage is retracted from the corner portion of the light emitting end face S _L, yet a 2p electrode (first conductive layer ) 16 be to solder alloyed to be connected to the heat sink 20 in a region exposed to protrude from the pad electrode (second conductive layer), the end face of such whom to suppress metal head light emitting end surface S _L contamination without causing, can ensure a high heat transfer efficiency to the heat sink 20, especially from semiconductor laser chip light emitting end face S _L of the LD.

In the semiconductor light emitting device of this embodiment, it is preferable that a thin layer containing gold is formed on the surface layer portion of the second p-electrode (first conductive layer) 16 as described later. This increases the wettability with the solder, since it alloying is enhanced heat transfer efficiency to the heat sink 20 from the light emitting end face S _L of the semiconductor laser chip LD.
At this time, the thickness of the layer containing gold is preferably 5 nm or less. As a result, it is possible to suppress dripping due to gold at the time of cleavage in the semiconductor laser chip forming process to a level that does not substantially affect.
For example, it is composed of a metal laminate of 50 nm thick Ti / 100 nm thick Pt / 5 nm thick Au.

In the semiconductor light emitting device of this embodiment, it is preferable that the surface layer portion of the second p electrode (first conductive layer) 16 contains nickel or copper. Due to the high wettability of nickel or copper may solder, enhanced heat transfer efficiency to the heat sink 20 from the semiconductor laser chip light emitting end face S _L of the LD.
However, since a natural oxide film is easily formed on the surface layer of nickel or copper, wettability with solder may be deteriorated. Therefore, when mounting via solder, the surface of nickel or copper is oxidized naturally. It is important to do this after removing the film.

In the semiconductor light-emitting device of the present embodiment, the semiconductor laser chip LD is preferably light emitting side end face S _L is mounted on the heat sink 20 so as to protrude outward from the side surface of the heat sink 20. In this way, the heat sink 20 does not block the laser light, and the light emitted from the semiconductor laser chip LD can be taken out without waste.

Next, a method for manufacturing the semiconductor light emitting device of this embodiment will be described.
First, a semiconductor laser chip forming process will be described.
For example, a buffer layer, a contact layer, or the like is formed on an n-type substrate 10 such as GaN by, for example, MOCVD (metal organic chemical vapor deposition), and further, for example, an n-type film having a thickness of about 0.5 μm. An AlGaN layer (first cladding) 11, an active layer 12 having a multiple quantum well (MQW) structure made of InGaN or the like, a p-type AlGaN layer (second cladding) 13 having a thickness of about 0.5 μm, and a guide layer as appropriate, Laminate while forming a cap layer or contact layer.
Next, the p-type cladding 13 is processed into a ridge shape 13a, and an insulating film 14 such as silicon oxide is formed so as to sandwich the ridge portion, thereby forming a current confinement structure.
Next, a first p electrode 15 made of, for example, Pd / Pt is formed on the p-type cladding 13.
Next, the second p electrode (the first ply 15 is covered until it reaches the upper layer of the insulating film 14 by covering the upper layer of the stacked body up to the first p electrode 15 by covering the position that becomes the light emitting end face. Conductive layer) 16 is formed.
Next, a pad electrode (second conductive layer) 17 is formed on the upper layer of the second p electrode (first conductive layer) 16 so as to recede with a predetermined width from the position serving as the light emission end face. It is formed as a metal laminate of Pt with a thickness of 100 nm / Au with a thickness of 300 nm.
On the other hand, an n-electrode 18 is formed on the back side of the n-type substrate 10.
Further, a dicing process is performed in parallel with the light emitting direction to obtain a configuration shown in the plan view of FIG. 3A and the cross-sectional view of FIG.

After the above dicing process, the light emitting end face is exposed by cleaving up to the second p-electrode (first conductive layer) 16 at the position C as the light emitting end face shown in FIGS. 3 (a) and 3 (b).
Thus, the semiconductor laser chip LD having the configuration shown in FIGS. 2A to 2C can be formed.

  Next, the semiconductor laser chip LD is mounted on the heat sink 20 via the solder layer 21 from the pad electrode (second conductive layer) 17 side. At this time, the solder layer 21 electrically and thermally connects the second p electrode (first conductive layer) 16 and the pad electrode (second conductive layer) 17 of the semiconductor laser chip LD to the heat sink 20.

  Here, in the step of mounting the semiconductor laser chip on the heat sink 20 via the solder layer 21 from the pad electrode (second conductive layer) 17 side, the pad electrode (second conductive layer) 17 has a predetermined width W2 and a corner portion. The second p-electrode (first conductive layer) 16 and the solder layer 21 are alloyed in the vicinity of the boundary between the second p-electrode (first conductive layer) 16 and the solder layer 21 in the region receding from.

The method of manufacturing a semiconductor light-emitting device according to this embodiment, retracts the pad electrode (second conductive layer) 17 serving as anyone cause cleavage at the semiconductor laser chip from the corner portion of the light emitting end face S _L, further semiconductor When the laser chip LD is mounted on the heat sink 20, the second p electrode (first conductive layer) 16 protrudes from the pad electrode (second conductive layer) 17 and is exposed to an alloy with solder that is connected to the heat sink 20. be to, whom to suppress without causing facet contamination such as metal head light emitting end face S _L, can ensure a high heat transfer efficiency to the heat sink 20, especially from semiconductor laser chip light emitting end face S _L of LD .

In the method of manufacturing the semiconductor light emitting device according to the present embodiment, in the step of forming the second p electrode (first conductive layer) 16, a thin layer containing gold is used in at least the surface layer portion of the second p electrode (first conductive layer) 16. It is preferable to form. This increases the wettability with the solder, since it alloying is enhanced heat transfer efficiency to the heat sink 20 from the light emitting end face S _L of the semiconductor laser chip LD.
In the step of forming the second p electrode (first conductive layer) 16, it is preferable to form the gold-containing layer with a thickness of 5 nm or less. As a result, it is possible to suppress dripping due to gold at the time of cleavage in the semiconductor laser chip forming process to a level that does not substantially affect.
For example, a metal laminate of Ti with a thickness of 50 nm / Pt with a thickness of 100 nm / Au with a thickness of 5 nm can be preferably formed.

In the semiconductor light emitting device of this embodiment, in the step of forming the second p electrode (first conductive layer) 16, at least the surface layer portion of the second p electrode (first conductive layer) 16 is formed of a layer containing nickel or copper. It is preferable to do. Due to the high wettability of nickel or copper may solder, enhanced heat transfer efficiency to the heat sink 20 from the semiconductor laser chip light emitting end face S _L of the LD.
More preferably, before the step of mounting the semiconductor laser chip LD on the heat sink 20 via the solder layer 21 from the pad electrode (second conductive layer) 17 side, the oxide film on the surface of the layer containing nickel or copper described above The method further includes the step of removing. Nickel and copper are deteriorated in wettability with solder due to a natural oxide film, but removing this improves the wettability of solder, and the second p electrode (first conductive layer) 16 becomes a pad electrode (first conductive layer). (2 conductive layers) 17 can be alloyed with solder connected to the heat sink 20 in a region that protrudes and is exposed.

In the semiconductor light emitting device of this embodiment, in the step of mounting the semiconductor laser chip LD on the heat sink 20 from the pad electrode (second conductive layer) 17 side via the solder layer 21, the light emission side end face _SL is a heat sink. The semiconductor laser chip LD is preferably mounted on the heat sink 20 so as to protrude outward from the side surface of the semiconductor 20. The heat sink 20 does not block the laser beam, and the light emitted from the semiconductor laser chip LD can be taken out without waste.

According to the semiconductor light emitting device and the manufacturing method thereof according to the above-described embodiment, the following advantages can be obtained.
Since the temperature rise on the emission end face side can be suppressed, deterioration due to the light emission end face can be suppressed, and the life of the semiconductor light emitting device can be extended.
Maximum output or COD level can be improved.
Electrostatic breakdown strength (ESD) can be improved.
Even if the relative position accuracy of the heat sink tip and the semiconductor laser chip tip at the time of assembly varies, the solder of the second p electrode (first conductive layer) has good wettability. It is possible to follow the position where the conductive layer) is exposed, and to suppress variations in the above characteristics.

The present invention is not limited to the above description.
For example, the semiconductor laser chip is not limited to the GaN system, but may be a semiconductor laser chip of another material system such as an AlGaAs system.
Further, the semiconductor laser chip is configured to be mounted on a heat sink, but the present invention can also be applied to a configuration in which a light emitting diode chip is mounted.
In addition, as a semiconductor laser chip, a configuration in which an n-type cladding, an active layer, and a p-type cladding are stacked on an n substrate is shown, but not limited to this, a p-type cladding, an active layer, and an n-type cladding are stacked on a p substrate. And it is applicable also to the structure mounted in the heat sink from the n electrode side formed on the n-type clad.
In addition, various modifications can be made without departing from the scope of the present invention.

  The semiconductor light emitting device of the present invention can be applied to various fields as a light source of an optical pickup device of a CD or DVD, or a next generation optical disk device, or a light source of other equipment.

  The method for manufacturing a semiconductor light emitting device of the present invention can be applied as a method for manufacturing a light source of an optical pickup device of a CD or DVD, or a next generation optical disk device, or a light source of other equipment.

FIG. 1A is a schematic cross-sectional view in a cross section parallel to the light emission direction of a semiconductor light emitting device in which a semiconductor laser chip according to an embodiment of the present invention is mounted on a heat sink, and FIG. It is an enlarged view of the X section in a). 2A is a top view of the semiconductor laser chip according to the embodiment of the present invention, FIG. 2B is a cross-sectional view taken along line AA ′ in FIG. 2A, and FIG. These are sectional drawings in BB 'in Drawing 2 (a). FIG. 3A is a plan view showing a process of forming a semiconductor laser chip according to the embodiment of the present invention, and FIG. 3B is a cross-sectional view. FIG. 4 is a schematic cross-sectional view of a conventional semiconductor laser chip in a cross section parallel to the light emitting direction.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... n-type substrate, 11 ... n-type clad (first clad), 12 ... active layer, 13 ... p-type clad (second clad), 13a ... ridge shape, 14 ... insulating film, 15 ... first p-electrode, 16 2nd p-electrode (first conductive layer), 17 Pad electrode (second conductive layer), 18 n-electrode, 20 heat sink, 21 solder layer, 100 on n-type substrate, 101 n-type clad, 102 ... active layer, 103 ... p-type cladding, 104 ... p-electrode, 105 ... pad electrode, 106 ... n-electrode, C ... position to be the light emitting end face, L ... laser light, LD ... semiconductor laser chip, R ... pad electrode ( Region where the second conductive layer is receding from the corner with a predetermined width, S _L ... light emission end face

Claims (12)

A stack including a first conductivity type first clad, an active layer, and a second conductivity type second clad having a current confinement structure is formed on a first conductivity type substrate, and the first clad and the second clad are formed. A semiconductor laser chip that emits laser light from the light emitting end face of the laminate when a predetermined voltage is applied to the laminate, covering the upper layer of the laminate to the corners between the upper surface of the laminate and the light emitting end face. A first conductive layer is formed on the first conductive layer so as to recede from the light emitting end surface by the predetermined width so that the first conductive layer is exposed from the corner portion with a predetermined width. A semiconductor laser chip on which a second conductive layer is formed;
A heat sink in which the semiconductor laser chip is mounted from the second conductive layer side;
A solder layer formed by electrically and thermally connecting the first conductive layer and the second conductive layer of the semiconductor laser chip and the heat sink;
The first conductive layer and the solder layer are alloyed in the vicinity of the boundary between the first conductive layer and the solder layer in a region where the second conductive layer recedes from the corner with the predetermined width. Semiconductor Light emitting device. The semiconductor light-emitting device according to claim 1, wherein a surface layer portion of the first conductive layer contains gold. The semiconductor light-emitting device according to claim 2, wherein the gold-containing layer has a thickness of 5 nm or less. The semiconductor light emitting device according to claim 1, wherein a surface layer portion of the first conductive layer contains nickel or copper. The semiconductor light emitting device according to claim 1, wherein the semiconductor laser chip is mounted on the heat sink so that the light emitting side end surface protrudes outward from a side surface of the heat sink. A stack including a first conductivity type first clad, an active layer, and a second conductivity type second clad having a current confinement structure is formed on a first conductivity type substrate, and the first clad and the second clad are formed. A semiconductor laser chip that emits laser light from the light emitting end face of the laminate when a predetermined voltage is applied to the laminate, covering the upper layer of the laminate to the corners between the upper surface of the laminate and the light emitting end face. A first conductive layer is formed on the first conductive layer so as to recede from the light emitting end surface by the predetermined width so that the first conductive layer is exposed from the corner portion with a predetermined width. Forming a semiconductor laser chip on which the second conductive layer is formed;
The semiconductor laser chip is mounted on a heat sink via a solder layer from the second conductive layer side, and the solder layer electrically and electrically connects the first conductive layer, the second conductive layer, and the heat sink of the semiconductor laser chip. A step of thermally connecting, and
In the step of mounting the semiconductor laser chip on the heat sink from the second conductive layer side through the solder layer, the first conductive layer in a region where the second conductive layer recedes from the corner with the predetermined width. A method of manufacturing a semiconductor light emitting device, wherein the first conductive layer and the solder layer are alloyed in the vicinity of the boundary between the layer and the solder layer. Forming the semiconductor laser chip,
Forming the first conductive type first clad, the active layer and the second conductive type second clad having a current confinement structure on the first conductive type substrate;
Forming the first conductive layer on the upper layer of the laminate by covering the position that becomes the light emitting end face; and
Forming the second conductive layer on an upper layer of the first conductive layer so as to recede with the predetermined width from a position to be the light emitting end face;
The method for manufacturing a semiconductor light emitting device according to claim 6, further comprising: cleaving up to the first conductive layer at a position that becomes the light emitting end face to expose the light emitting end face. The method for manufacturing a semiconductor light emitting device according to claim 7, wherein in the step of forming the first conductive layer, at least a surface layer portion of the first conductive layer is formed of a layer containing gold. The method for manufacturing a semiconductor light emitting device according to claim 8, wherein in the step of forming the first conductive layer, the layer containing gold is formed with a film thickness of 5 nm or less. The method for manufacturing a semiconductor light emitting device according to claim 7, wherein in the step of forming the first conductive layer, at least a surface layer portion of the first conductive layer is formed of a layer containing nickel or copper. 11. The method of claim 10, further comprising a step of removing an oxide film on a surface of the layer containing nickel or copper before the step of mounting the semiconductor laser chip on the heat sink from the second conductive layer side through the solder layer. The manufacturing method of the semiconductor light-emitting device of description. In the step of mounting the semiconductor laser chip on the heat sink from the second conductive layer side through the solder layer, the semiconductor laser chip is placed on the heat sink so that the light emitting side end surface protrudes outward from the side surface of the heat sink. The method for manufacturing a semiconductor light-emitting device according to claim 6.

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