JP2006269533A - Solid-state imaging device and its manufacturing method, electronic information equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device and its manufacturing method wherein process parameters can be easily controlled and a wide margin can be secured for a defective color mixture (color shading) and defective luminance shading by the deviation of a lens, etc. accompanied by the microfabrication of a cell size, and also to provide electronic information equipment using the device such as a digital camera, a video camera, and a camera-attached mobile phone. <P>SOLUTION: A flattened film 5 is etched to only a desired depth for each color region of a color filter by a photolithography technology and an etching technology to form steps in the flattened film 5. By forming each color layer 13a-13c of the color filter thereon, the top surface of the color filter is flattened with no step while maintaining an optimum thickness for each color layer 13a-13c. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a colorized solid-state imaging device used as an image sensor, a manufacturing method thereof, and an electronic information device such as a digital camera, a video camera, and a camera-equipped mobile phone device using the same.

  In recent years, in order to colorize a solid-state imaging device, a method of forming a color filter directly on a semiconductor substrate on which a solid-state imaging device such as a CCD (Charge Coupled Device) is formed has become mainstream. Further, with the miniaturization of the cell size, a configuration is adopted in which a microlens is formed on the color filter and condensed on the light receiving unit.

  Hereinafter, as a conventional solid-state imaging device and a method for manufacturing the same, an intra-layer microlens forming process of FIGS. 6A to 6C and a planarizing film forming process of FIGS. 7D and 7E are shown. 8 (f) to 8 (h) and the microlens formation process of FIGS. 9 (i) to 9 (k) will be described in detail.

  FIG. 6A to FIG. 9K are cross-sectional views of relevant parts for explaining each manufacturing process of a conventional solid-state imaging device, and here, a CCD is illustrated.

As shown in FIG. 6A, the polysilicon film 3a constituting the transistor channel region and the Al film of the gate electrode are formed on the wafer substrate 1 through the SiO ₂ film 2 as a gate insulating film on the wafer substrate 1. A solid-state imaging device (CCD) on which 3b is formed is formed. The wafer substrate 1 is provided with a plurality of light receiving regions (pixel portions; photoelectric conversion portions) (not shown) in order to generate signal charges by light irradiation, and in order to transfer signal charges from the light receiving regions, Around this light receiving region, a transistor 3 is configured by providing a gate electrode on the transistor channel region via a gate insulating film made of the SiO ₂ film 2.

  A microlens material is applied to the entire surface of the substrate on which the transistor 3 is provided, and etching is performed by leaving a desired region by photolithography as shown in the in-layer microlens photo process of FIG. 6B. As shown in the in-layer microlens melting step (c), a plurality of in-layer microlenses 4 are formed by melting the microlens material and rounding the outer peripheral edge. This in-layer microlens 4 is formed as necessary, and is formed into a convex lens shape for condensing light in each light receiving region (photoelectric conversion unit), and corresponds to the position of each light receiving region. Is provided.

  Next, as shown in the acrylic material application process in FIG. 7D, the acrylic material 5a is applied to the entire surface of the wafer on the in-layer microlens 4, and as shown in the acrylic material surface flattening process in FIG. Then, the surface of the acrylic material 5a is flattened to form the flattened film 5. At this time, the planarizing film 5 may be etched back as necessary.

  Further, a color filter material is applied on the planarizing film 5, and a color layer is left only in a necessary region by a photolithography technique. This color filter photo process is repeated for each color layer of the color filter.

  That is, first, a color filter material of the first color is applied on the planarizing film 5, a color layer is left only in the color layer formation region of the first color by photolithography technology, and the other regions are developed and removed, whereby FIG. As shown in (f), the first color layer 6a is formed. Next, a color filter material for the second color is applied, a color layer is left only in the color layer formation region for the second color by photolithography, and the other regions are developed and removed, as shown in FIG. A second color layer 6b is formed. Further, a third color layer 6c is formed as shown in FIG. 8H by applying a color filter material of the third color and leaving a color layer in the color layer formation region of the third color by photolithography. .

  Further, as shown in FIG. 9I, an acrylic material is applied to the entire surface of the color layers 6a to 6c of the color filter, and the protective film 7 is formed by flattening the surface of the acrylic material. At this time, the protective film 7 may be etched back as necessary.

  Further, a microlens material is applied on the protective film 7, and etching is performed by using a photolithography technique to leave a desired region as shown in the microlens photo process of FIG. 9 (j). As shown in the microlens melting step, the microlens material is melted to round the outer peripheral edge, thereby forming the microlenses 8 above the color layers 6a to 6c of the color filter. The microlens 8 has a convex lens shape for condensing light in the light receiving region, and is formed corresponding to each of the color layers 6a to 6c.

  Each of the color layers 6a to 6c of the color filter has an optimum film thickness depending on the color. However, in the conventional method for manufacturing a solid-state imaging device, the lower portions of the color layers 6a to 6c of the color filter are flattened. Therefore, the upper surfaces of the color layers 6a to 6c of the color filter are not flush with each other, and the upper surface is in an uneven state by each color region.

  For this reason, as the pixel size (the size of the light receiving region) becomes smaller, when the positional relationship between the color layers 6a to 6c of the color filter and the microlens 8 provided on the color layer deviates from an ideal one, In the process in which the light that has passed through the microlens 8 is collected on each light receiving area, the probability that the light passes through a part of the color filter of the adjacent pixel portion (light receiving area) increases, and color mixing (color It may be a cause of defective shading.

  Therefore, for example, in Patent Document 1, in order to prevent light from being mixed between adjacent pixel portions, a transparent polymer resin is spin-coated on a substrate having an uneven surface, and a transparent polymer resin film is formed only on the concave portion of the original surface. A method of flattening the surface by leaving it and forming a dyed layer, an intermediate layer, and a dyed layer thereon is disclosed.

  For example, in Patent Document 2, after each color layer of a color filter of a specific color is selectively formed, a surface substantially in the same position as the surface of each color layer of the color filter is formed in a region where each color layer of the color filter is not formed. A method is disclosed in which a step reducing layer is formed to have a height, and a color layer of another color is selectively formed thereon.

According to these methods, each color layer of the color filter having a uniform thickness can be formed, and the line spectral difference due to the thickness difference of each color layer of the color filter can be suppressed.
JP-A-4-233273 JP 11-340447 A

  As described above, in the above-described conventional method for manufacturing a solid-state imaging device, the color filter has an optimum film thickness depending on the color, and the ground of the color layers 6a to 6c of the color filter is flattened. Since the upper surfaces of the color layers 6a to 6c of the color filter are not aligned and become uneven depending on the color region, there is a possibility that color shading failure may occur.

  In the prior art disclosed in Patent Document 1 and Patent Document 2, in order to prevent color mixture (color shading), each color layer of the color filter is not formed at the same height, but two layers, three layers, and the like. A color filter layer is formed by laminating, and although the object is similar to that of the present invention, the structure is fundamentally different.

  Further, it is known that the smaller the distance between the semiconductor substrate and the microlens, the more advantageous is the condensing of obliquely incident light with the miniaturization of each pixel portion. This is because the smaller the distance between the semiconductor substrate and the microlens, the smaller the deviation of the condensing point on the substrate for obliquely incident light with respect to each incident angle.

  However, in the prior art disclosed in Patent Document 1 and Patent Document 2, each color layer of the color filter is formed in a laminated structure of two or more layers, so the distance between the semiconductor substrate and the microlens is increased. Concentration is not sufficient for the pixel portions at both ends of the pixel region, and there is a concern about deterioration of luminance shading, which is a ratio of the concentration rate with the pixel portion at the center of the pixel region.

  Further, as in the prior art disclosed in Patent Document 1 and Patent Document 2, when the color filter is a laminated structure, it is necessary to control the film thickness and the line width of each layer. Easy to control.

  The present invention solves the above-described conventional problems, and can easily control process parameters, and can widen a margin for color / brightness shading failure due to lens displacement or the like caused by miniaturization of the cell size. It is an object of the present invention to provide an electronic information device such as a digital camera, a video camera, and a camera-equipped mobile phone device using the same and a manufacturing method thereof.

  In the solid-state imaging device of the present invention, a base layer is further provided on a semiconductor substrate on which a solid-state imaging device having a plurality of light receiving portions is formed, and each color layer of a color filter is provided so as to correspond to each of the light receiving portions. The ground layer is provided with a step corresponding to the predetermined thickness of each color layer, and the surface of each color layer is flush, thereby achieving the above object.

  Preferably, the predetermined layer thickness of each color layer in the solid-state imaging device of the present invention is an optimum thickness for each color.

  Further preferably, the base layer in the solid-state imaging device of the present invention is made of an acrylic material.

  Further preferably, a microlens is provided above each color layer of the color filter in the solid-state imaging device of the present invention so as to correspond to each color layer.

  Further, preferably, an in-layer microlens is provided between each light receiving portion of the solid-state imaging device and each color layer of the color filter in the solid-state imaging device of the present invention.

  A method for manufacturing a solid-state imaging device according to the present invention includes a planarization film forming step of forming a planarization film on a semiconductor substrate on which a solid-state imaging device having a plurality of light receiving portions is formed, and a color for the planarization film. Etching the region corresponding to each color layer of the filter to a depth required for each color layer to form a step, and the step corresponding to each step on the step provided on the planarizing film. A color filter forming step of forming each color layer and making the surface thereof flush with each other, thereby achieving the above object.

  Preferably, the etching depth of the planarization film in the method for manufacturing the solid-state imaging device of the present invention is set according to the optimum thickness for each color.

  Further preferably, the etching step in the manufacturing method of the solid-state imaging device of the present invention forms a photoresist mask having an opening in a desired region by photolithography technique on the planarizing film, and uses the photoresist mask. Then, the step is formed by etching the planarizing film.

  Further preferably, the planarizing film in the method for manufacturing a solid-state imaging device of the present invention is formed of an acrylic material.

  Further preferably, each color layer in the method for manufacturing a solid-state imaging device of the present invention is formed so as to correspond to each of the light receiving portions.

  Preferably, the method further includes a microlens forming step of forming a microlens on the color filter so as to correspond to each of the light receiving portions after the color filter forming step in the method of manufacturing the solid-state imaging device of the present invention.

  Further preferably, the method further includes an in-layer microlens forming step of forming an in-layer microlens so as to correspond to each of the light receiving portions before the planarizing film forming step in the method of manufacturing the solid-state imaging device of the present invention.

  The solid-state imaging device of the present invention includes the solid-state imaging device of the present invention, a signal processing unit that performs signal processing on an output image signal from the solid-state imaging device, and an image signal that is signal-processed by the signal processing unit. And a display unit that can display based on the above, thereby achieving the above object.

  The solid-state imaging device of the present invention includes the above-described solid-state imaging device of the present invention, a signal processing unit that processes an output image signal from the solid-state imaging device for storage, and an image signal that is signal-processed by the signal processing unit. And a storage unit capable of storing, thereby achieving the above object.

  The solid-state imaging device of the present invention includes the solid-state imaging device of the present invention, a signal processing unit that performs signal processing on an output image signal from the solid-state imaging device, and an image signal that is signal-processed by the signal processing unit. A communication unit that enables communication, thereby achieving the above object.

  The solid-state imaging device of the present invention is displayed based on the solid-state imaging device of the present invention, a signal processing unit that performs signal processing on an output image signal from the solid-state imaging device, and an image signal that is signal-processed by the signal processing unit. A display unit capable of storing, a storage unit capable of storing an image signal signal-processed by the signal processing unit, and a communication unit capable of communicating the image signal signal-processed by the signal processing unit. Yes, and the above objective is achieved.

  The operation of the present invention will be described below with the above configuration.

  In the present invention, the base layer is further provided on the semiconductor substrate on which the solid-state imaging device having a plurality of light receiving portions is formed, and each color layer of the color filter is provided so as to correspond to each of the light receiving portions. Are provided with a level difference corresponding to a predetermined layer thickness of each color layer of the color filter, and the surface of each color layer is flush.

  That is, the leveling film is etched by a desired depth for each region corresponding to each color of the color filter by a photolithography technique and an etching technique to provide a step. By forming each color layer of the corresponding color filter thereon, it is possible to make the upper surface of the color filter flush with each other while ensuring the optimum film thickness of each color layer.

  Even if the cell size of each pixel portion is miniaturized and the micro lens is misaligned, the color filter between the adjacent pixel portions (light receiving regions) is collected in the process of collecting the light that has passed through the lens. Since the upper surface is aligned, the margin for color shading failure is widened, and the color layer has the optimum film thickness, so that the pixel characteristics can be stabilized.

  Furthermore, since the color filter can have a single-layer structure, the distance between the semiconductor substrate and the microlens is shortened compared to Patent Document 1 and Patent Document 2 in which the color filter is a laminated structure, and both ends of the pixel region It is possible to sufficiently condense the pixel, and to prevent deterioration of luminance shading, which is a ratio of the condensing rate with the pixel in the center of the pixel region. Furthermore, it is not necessary to control the film thickness and line width of each layer as compared with Patent Document 1 and Patent Document 2 in which the color filter has a laminated structure, and process parameters can be controlled more easily.

  As described above, according to the present invention, the leveling film is provided with a step by a desired depth for each region corresponding to each color layer of the color filter, and each color layer of the corresponding color filter is formed thereon. Thus, the upper surface of the color filter can be flattened and flattened while maintaining the optimum film thickness of each color layer.

  As a result, the cell size of the pixel portion is further miniaturized, and even if there is a slight misalignment of the microlens, the light passing through the lens passes through the color filter of the adjacent pixel portion in the process of being condensed. The possibility decreases and the margin for color shading failure can be increased.

  Moreover, since the color layer of each color filter has the optimum film thickness, the required value for each color can be satisfied and the pixel characteristics can be stabilized. In general, the color characteristics of an image pickup device are greatly affected by the film thickness of the color filter, but the required color filter thickness varies depending on the image pickup device model and color filter type (color layer / product). To do. In the present invention, since the optimum film thickness required for the corresponding model can be stably maintained, the pixel characteristics (color) can also be stabilized. The optimum film thickness of the color layer is a film thickness that provides an optimum color density. The thicker the film, the deeper the color.

  Furthermore, since the color filter has a single-layer structure, the distance between the semiconductor substrate and the microlens can be shortened compared with the conventional technology in which the color filter is a laminated structure, and the light is sufficiently focused on the pixels at both ends of the pixel region. In addition, it is possible to prevent deterioration of luminance shading, which is the ratio of the light collection rate with the pixel at the center of the pixel region. In this case, it is not necessary to control the film thickness and line width of each color layer, and process parameters can be controlled more easily.

  Embodiments of a solid-state imaging device and a manufacturing process thereof according to the present invention will be described below in detail with reference to the drawings.

  FIG. 1A to FIG. 5N are cross-sectional views for explaining a manufacturing process of the solid-state imaging device according to the embodiment of the present invention. Here, three color filters are provided in the CCD. An example is shown.

As shown in FIG. 1A, a polysilicon film 3a constituting a transistor channel region and an Al film 3b serving as a gate electrode are formed on a wafer substrate 1 via a SiO ₂ film 2 serving as a gate insulating film. The first half process of the solid-state image sensor (CCD) is completed. The wafer substrate 1 is provided with a plurality of light receiving regions (pixel portions; photoelectric conversion portions) (not shown) in order to generate signal charges by light irradiation, and in order to transfer signal charges from the light receiving regions, Around this light receiving region, a transistor 3 is configured by providing a gate electrode on the transistor channel region via a gate insulating film made of the SiO ₂ film 2.

  A microlens material is applied to the entire surface of the substrate on which the transistor 3 is provided, and etching is performed by using a photolithography technique to leave a desired region as shown in the in-layer microlens photo process of FIG. As shown in the in-layer microlens melting step (c), the microlens material is melted to round the periphery to form the in-layer microlenses 4. The in-layer microlens 4 is formed as necessary, and has a convex lens shape for condensing light in the light receiving region. This in-layer microlens 4 is provided corresponding to each light receiving region, and is provided between the transistors 3.

  Further, as shown in the acrylic material application step of FIG. 2D, the acrylic material 5a is applied to the entire surface of the substrate, and as shown in the acrylic material surface flattening step of FIG. The planarization film 5 is formed by planarization. At this time, the planarizing film 5 may be etched back as necessary. Up to this point, it can be performed in the same manner as each manufacturing process of the conventional solid-state imaging device shown in FIGS.

  Next, the planarizing film 5 is etched by a desired depth for each region corresponding to each color of the color filter to provide a step in the planarizing film 5.

  That is, first, a photoresist is applied to the front surface of the substrate after the acrylic material surface flattening step, and the photoresist in a desired region is developed and removed by photolithography using a photomask, whereby the resist shown in FIG. As shown in the photo process, a photoresist mask 11a having an opening in the color layer forming region 12a for the first color is formed. As shown in the etching step of FIG. 3G, the planarizing film 5 in the opening region (color layer forming region 12a) from which the photoresist mask 11a has been removed is etched to a desired depth to form the planarizing film 5a. Then, the photoresist mask 11a is peeled and removed. Further, a photoresist is applied to the entire surface of the substrate after the etching step, and the photoresist in a desired region is developed and removed by photolithography using another photomask having a pattern different from that of the photomask. As shown in the resist photo process (h), a photoresist mask 11b having a color layer forming region 12b of the second color opened is formed. Further, as shown in the etching step of FIG. 3I, after the planarizing film 5a in the opening region (color layer forming region 12b) of the photoresist mask 11b is etched by a desired depth corresponding to the second color, The photoresist mask 11b is peeled off.

  Next, the color layers 13a to 13c of the color filter are respectively formed on the steps corresponding to the first color layer forming region 12a, the second color layer forming region 12b, and the other regions.

  That is, first, a color filter material of the first color is applied on each step, a color layer is left only in the color layer formation region 12a of the first color by photolithography, and the color filter material of other regions is developed and removed. Thus, as shown in FIG. 4J, the first color layer 13a is formed on the first color layer formation region 12a. Next, by applying a color filter material of the second color, leaving a color layer only in the color layer formation region 12b of the second color by photolithography, and developing and removing the color filter material of other regions, FIG. ), A second color layer 13b is formed on the second color layer formation region 12b. Further, a color filter material for the third color is applied, and a color layer is left only in the other region 12c by photolithography, and the color filter material on the color layer formation region 12a for the first color and the color layer formation region 12b for the second color By developing and removing, a third color layer 12c is formed on the region 12c as shown in FIG.

  Further, an acrylic material is applied to the entire surface of the substrate on the color filter, and the protective film 7 is formed by flattening the surface of the acrylic material as shown in the acrylic material application process of FIG. At this time, the protective film 7 may be etched back as necessary. A microlens material is applied on the protective film 7, and a microlens 8 is formed on the color filter via the protective film 7 as shown in the microlens formation step of FIG. The micro lens 8 has a convex lens shape for condensing light in the light receiving area, and is provided to correspond to each light receiving area.

  As described above, the solid-state imaging device 10 of the present embodiment is manufactured.

  As shown in FIG. 5 (n), the solid-state imaging device 10 of the present embodiment is on a semiconductor substrate on which a solid-state imaging device having a plurality of light receiving regions (light receiving units, photoelectric conversion units) formed in a matrix is formed. Is provided with a base layer (planarizing film 5) made of an acrylic material, and further provided thereon are color layers 13a to 13c of color filters positioned so as to correspond to the respective light receiving regions. In the base layer (flattening film 5), a step corresponding to the optimum thickness of each color layer 13a to 13c is provided by etching, and the surface of each color layer 13a to 13c is flush. Above each of these color layers 13a to 13c, a microlens 8 is provided so as to correspond to each of the color layers 13a to 13c, and below that, a layer is provided to correspond to each of the color layers 13a to 13c. Each of the inner microlenses 4 is provided.

  As described above, according to the present embodiment, since the surface of the planarizing film 5a is etched by a desired depth for each region corresponding to each color of the color filter, a step is provided. The upper surfaces of the color layers 13a to 13c of the filter can be flattened without any step by aligning the upper surfaces of the three colors to the same height. Furthermore, since the color layers 13a to 13c of the color filter can be made to have an optimum film thickness (a film thickness at which an optimum color density can be obtained), the pixel characteristics can be stabilized.

  In the present embodiment, the CCD has been described as an example. However, the present invention is not limited to the CCD, and can be applied to all solid-state imaging devices such as a CMOS imager and a CSD.

  Although not specifically described in the above embodiment, the solid-state imaging device corresponding to the above embodiment can be applied to electronic information equipment such as a digital camera, a video camera, and a camera-equipped mobile phone device. As described above, the electronic information device of the present invention is also applied to various cameras, camera-equipped mobile phone devices, and the like, for displaying a solid-state imaging device corresponding to the above-described embodiment and an output image signal from the solid-state imaging device, A signal processing unit capable of signal processing for storage and communication, a display unit capable of displaying based on an image signal signal-processed by the signal processing unit, and an image signal-processed by the signal processing unit A storage unit capable of storing a signal and a communication unit capable of communicating an image signal signal-processed by the signal processing unit.

  As mentioned above, although this invention has been illustrated using preferable embodiment of this invention, this invention should not be limited and limited to this embodiment. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  According to the present invention, in a solid-state imaging device such as a CCD, a CMOS imager, and a CSD, a leveling film is etched by a desired depth for each region corresponding to each color of the color filter, and a step is provided thereon. By forming each color layer, the upper surface of the color filter can be aligned and flattened while maintaining the optimum film thickness of each color layer. As a result, in a solid-state imaging device in which a microlens is formed on the color filter, even if the microlens is misaligned as the cell size is reduced, the light passing through the lens is collected Thus, the possibility of passing through the color filters of adjacent pixels is reduced, and the margin for color shading failure can be widened. Furthermore, since the color layer of each color filter has the optimum film thickness, the required value for each color can be satisfied and the pixel characteristics can be stabilized.

(A)-(c) is principal part sectional drawing for demonstrating the manufacturing method (the 1) of the solid-state imaging device which concerns on embodiment of this invention. (D) And (e) is principal part sectional drawing for demonstrating the manufacturing method (the 2) of the solid-state imaging device which concerns on embodiment of this invention. (F)-(i) is principal part sectional drawing for demonstrating the manufacturing method (the 3) of the solid-state imaging device which concerns on embodiment of this invention. (J)-(l) is principal part sectional drawing for demonstrating the manufacturing method (the 4) of the solid-state imaging device which concerns on embodiment of this invention. (M) And (n) is principal part sectional drawing for demonstrating the manufacturing method (the 5) of the solid-state imaging device which concerns on embodiment of this invention. (A)-(c) is principal part sectional drawing for demonstrating the manufacturing method (the 1) of the conventional solid-state imaging device. (D) And (e) is principal part sectional drawing for demonstrating the manufacturing method (the 2) of the conventional solid-state imaging device. (F)-(h) is principal part sectional drawing for demonstrating the manufacturing method (the 3) of the conventional solid-state imaging device. (I)-(k) is principal part sectional drawing for demonstrating the manufacturing method (the 4) of the conventional solid-state imaging device.

Explanation of symbols

1 Wafer substrate 2 SiO ₂ film 3 Transistor 3a Polysilicon film 3b Al film (aluminum film)
4 In-layer microlens 5 Flattening film 5a Acrylic material 7 Protective film 8 Microlens 11a, 11b Photoresist mask 12a First color layer formation region 12b Second color layer formation region 13a-13c Color layer of color filter

Claims (16)

  A base layer is provided on a semiconductor substrate on which a solid-state imaging device having a plurality of light receiving parts is formed, and each color layer of a color filter is provided so as to correspond to each of the light receiving parts. A solid-state imaging device in which a step corresponding to a predetermined layer thickness is provided and the surface of each color layer is flush.   The solid-state imaging device according to claim 1, wherein the predetermined layer thickness of each color layer is an optimum thickness for each color.   The solid-state imaging device according to claim 1, wherein the base layer is made of an acrylic material.   The solid-state imaging device according to claim 1, wherein a microlens is provided above each color layer of the color filter so as to correspond to each color layer.   The solid-state imaging device according to claim 1, wherein an in-layer microlens is provided between each light receiving portion of the solid-state imaging element and each color layer of the color filter. A planarization film forming step of forming a planarization film on a semiconductor substrate on which a solid-state imaging device having a plurality of light receiving portions is formed;
An etching process for forming a step by etching a region corresponding to each color layer of the color filter to a depth necessary for each color layer with respect to the planarizing film;
A method of manufacturing a solid-state imaging device, comprising: forming a color layer corresponding to each step on the step provided on the planarizing film, and forming a color filter on the surface thereof.   The method for manufacturing a solid-state imaging device according to claim 6, wherein an etching depth of the planarizing film is set according to an optimum thickness for each color.   In the etching step, a photoresist mask having a desired region opened by a photolithography technique is formed on the planarizing film, and the planarizing film is etched using the photoresist mask to form the step. The manufacturing method of the solid-state imaging device of Claim 6 or 7.   The method for manufacturing a solid-state imaging device according to claim 6, wherein the planarizing film is formed of an acrylic material.   The method of manufacturing a solid-state imaging device according to claim 6, wherein each of the color layers is formed so as to correspond to each of the light receiving units.   The method for manufacturing a solid-state imaging device according to claim 1, further comprising a microlens forming step of forming a microlens on the color filter so as to correspond to each of the light receiving portions after the color filter forming step.   The solid-state imaging according to claim 1, further comprising an in-layer microlens forming step of forming an in-layer microlens so as to correspond to each of the light receiving parts before the planarizing film forming step. Device manufacturing method. A solid-state imaging device according to any one of claims 1 to 5;
A signal processing unit for processing an output image signal from the solid-state imaging device for display;
An electronic information device having a display unit capable of displaying based on an image signal signal-processed by the signal processing unit. A solid-state imaging device according to any one of claims 1 to 5;
A signal processing unit for processing an output image signal from the solid-state imaging device for storage;
An electronic information device having a storage unit capable of storing an image signal signal-processed by the signal processing unit. A solid-state imaging device according to any one of claims 1 to 5;
A signal processing unit that performs signal processing on the output image signal from the solid-state imaging device for communication;
An electronic information device having a communication unit capable of communicating an image signal signal-processed by the signal processing unit. A solid-state imaging device according to any one of claims 1 to 5;
A signal processing unit that performs signal processing on an output image signal from the solid-state imaging device;
A display unit capable of displaying based on the image signal signal-processed by the signal processing unit;
A storage unit capable of storing an image signal signal-processed by the signal processing unit;
An electronic information device having a communication unit capable of communicating an image signal signal-processed by the signal processing unit.

Images