JP2006188729A - Substrate treatment apparatus - Google Patents

Substrate treatment apparatus Download PDF

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JP2006188729A
JP2006188729A JP2005000961A JP2005000961A JP2006188729A JP 2006188729 A JP2006188729 A JP 2006188729A JP 2005000961 A JP2005000961 A JP 2005000961A JP 2005000961 A JP2005000961 A JP 2005000961A JP 2006188729 A JP2006188729 A JP 2006188729A
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plasma
gas
processing chamber
ignition
treatment chamber
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Nobuo Ishimaru
信雄 石丸
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of preventing harmful effects caused by improper ignition and ignition delay of plasma. <P>SOLUTION: In an ALD apparatus comprising a process tube 31 having a treatment chamber 32 to collectively treat a plurality of wafers 1, a gas feed pipe 38 to feed dichloro-silane gas 73 to the treatment chamber 32, a gas feed pipe 50 to feed ammonium gas 71 to the treatment chamber 32, an exhaust pipe 35 to exhaust the treatment chamber 32, a pair of electrodes 57, 57 to excite plasma in the treatment chamber 32, and a high frequency power source 58 to apply the high frequency power to both electrodes, an optical sensor 63 to detect the light emission of plasma is arranged outside the treatment chamber 32, and the optical sensor 63 is connected to a controller 60 to control the high frequency power source 58. The controller 60 detects improper ignition and ignition delay of plasma by the signal from the optical sensor 63 in an early stage to avoid repetition of the ignition state with the most unstable plasma state and to ensure the situation capable of ensuring the stable film deposition. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、基板処理装置、特に、バッチ式リモートプラズマ処理装置に関し、例えば、半導体集積回路装置（以下、ＩＣという。）の製造方法において、半導体素子を含む半導体集積回路を作り込む半導体ウエハ（以下、ウエハという。）に絶縁膜や金属膜を堆積（デポジション）するのに利用して有効なものに関する。   The present invention relates to a substrate processing apparatus, and more particularly to a batch type remote plasma processing apparatus. For example, in a manufacturing method of a semiconductor integrated circuit device (hereinafter referred to as an IC), a semiconductor wafer (hereinafter referred to as a semiconductor integrated circuit including semiconductor elements). , Which is effective for depositing (depositing) an insulating film or a metal film on a wafer.

ＩＣの製造方法において低温下でウエハに成膜する基板処理装置として、複数枚のウエハを一括して処理する処理室を形成したプロセスチューブと、処理室内に処理ガスを供給するガス供給手段と、処理室内を排気する排気手段と、処理室内にてプラズマを生成させて処理ガスを励起させる高周波電力が印加される一対の電極とを備えているバッチ式リモートプラズマ処理装置が、提案されている。例えば、特許文献１参照。
特開２００２−２８０３７８号公報 As a substrate processing apparatus for forming a film on a wafer at a low temperature in an IC manufacturing method, a process tube in which a processing chamber for processing a plurality of wafers at once is formed, a gas supply means for supplying a processing gas into the processing chamber, There has been proposed a batch type remote plasma processing apparatus including an exhaust unit for exhausting the processing chamber and a pair of electrodes to which high-frequency power is applied to generate plasma in the processing chamber and excite the processing gas. For example, see Patent Document 1.
JP 2002-280378 A

このようなバッチ式リモートプラズマ処理装置を使用した低温での窒素膜の形成において、ジクロロシラン（ＳｉＨ2 Ｃｌ2 。ＤＣＳ）ガスとアンモニア（ＮＨ3 ）ガスとを交互に供給することにより、シリコン（Ｓｉ）層と窒素（Ｎ2 ）層とをそれぞれ一層ずつ形成する原子層成膜（Atomic Layer Deposition 。以下、ＡＬＤという。）法を実施し、このＡＬＤ法の実施に際して、アンモニアガスの供給時にアンモニアガスをプラズマで活性化して供給したところ、高品質の窒化膜が得られた。 In forming a nitrogen film at a low temperature using such a batch type remote plasma processing apparatus, silicon (SiH 2 Cl 2 .DCS) gas and ammonia (NH 3 ) gas are alternately supplied to form silicon ( An atomic layer deposition (hereinafter referred to as ALD) method in which a Si) layer and a nitrogen (N 2 ) layer are formed one by one is carried out. When the ALD method is performed, ammonia is supplied when ammonia gas is supplied. When the gas was activated and supplied with plasma, a high quality nitride film was obtained.

しかしながら、前記したバッチ式リモートプラズマ処理装置を使用したＡＬＤ法においては、ジクロロシランガスの供給とアンモニアガスの供給とが短時間で切り換えられ、その都度、プラズマの点火と消火とが繰り返されることにより、プラズマ状態が最も不安定な着火状態が何度も繰り返されるために、着火ミスや着火遅延が発生し易いという問題点があることが本発明者によって明らかにされた。   However, in the ALD method using the batch type remote plasma processing apparatus described above, the supply of dichlorosilane gas and the supply of ammonia gas are switched in a short time, and each time plasma ignition and extinguishing are repeated, It has been clarified by the present inventor that the ignition state in which the plasma state is the most unstable is repeated many times, so that there is a problem that an ignition mistake or an ignition delay is likely to occur.

本発明の目的は、プラズマの着火ミスや着火遅延による弊害を防止することができる基板処理装置を提供することにある。   An object of the present invention is to provide a substrate processing apparatus capable of preventing adverse effects due to plasma ignition mistakes and ignition delays.

本発明に係る基板処理装置は、基板を収容して処理する処理室と、前記処理室内に複数の処理ガスを互いに混合しないように交互に供給および排出するガス供給手段と、前記処理室内を排気する排気手段と、前記処理室内にてプラズマを生成させて、前記処理ガスのうち少なくとも一つの処理ガスを励起させる高周波電力が印加される一対の電極と、前記処理室の外部に配置されて前記プラズマの発光状態を検出する検出手段と、前記検出手段からの信号に基づきプラズマの着火ミスや着火遅延を判断する判断手段と、を備えていることを特徴とする。   A substrate processing apparatus according to the present invention includes a processing chamber for storing and processing a substrate, a gas supply means for alternately supplying and discharging a plurality of processing gases into the processing chamber so as not to mix with each other, and exhausting the processing chamber. And a pair of electrodes to which high-frequency power is applied to generate plasma in the processing chamber and excite at least one processing gas among the processing gases, and to be disposed outside the processing chamber. It is characterized by comprising detection means for detecting a light emission state of plasma and determination means for determining a plasma ignition error or ignition delay based on a signal from the detection means.

前記手段によれば、プラズマの着火ミスや着火遅延を早期に検出することにより、プラズマの着火を確実に行なうことができるので、所謂不良ロットの低減を図ることができる。   According to the above means, it is possible to reliably perform the plasma ignition by detecting the plasma ignition mistake and the ignition delay at an early stage, so that it is possible to reduce so-called defective lots.

以下、本発明の一実施の形態を図面に即して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

本実施の形態において、本発明に係る基板処理装置は、ウエハ等の基板へのプラズマ処理例としてのプラズマＣＶＤ法の一つであるＡＬＤ法を実施するＡＬＤ装置として構成されている。
ＡＬＤ法は、ある成膜条件（温度、時間等）の下で、成膜に用いる２種類（またはそれ以上）の原料となるガスを１種類ずつ順次に基板上に供給し、１原子層単位で吸着させ、表面反応を利用して成膜を行う方法である。
例えば、シリコン窒化（ＳｉＮｘ）膜を形成する場合のＡＬＤ法においては、ＤＣＳ（ＳｉＨ2 Ｃｌ2 、ジクロロシラン）とＮＨ3 （アンモニア）を用いて、３００〜６００℃の低温で、高品質の成膜が可能である。
そして、複数種類の反応性ガスは１種類ずつ順次に供給する。また、膜厚の制御は反応性ガス供給のサイクル数によって実行することができる。例えば、成膜速度が１Å／サイクルとすると、２０Åの膜を形成する場合には、複数種類のガスの供給は２０サイクル行う。 In the present embodiment, the substrate processing apparatus according to the present invention is configured as an ALD apparatus that performs an ALD method which is one of plasma CVD methods as an example of plasma processing on a substrate such as a wafer.
In the ALD method, under one film formation condition (temperature, time, etc.), two kinds (or more) of raw material gases used for film formation are sequentially supplied onto the substrate one by one, in units of one atomic layer. In this method, film formation is performed using surface reaction.
For example, in the ALD method in the case of forming a silicon nitride (SiNx) film, DCS (SiH 2 Cl 2 , dichlorosilane) and NH 3 (ammonia) are used and a high-quality composition is formed at a low temperature of 300 to 600 ° C. A membrane is possible.
A plurality of types of reactive gases are sequentially supplied one by one. The film thickness can be controlled by the number of reactive gas supply cycles. For example, assuming that the film formation rate is 1 liter / cycle, when a 20 liter film is formed, a plurality of types of gases are supplied for 20 cycles.

図１に示されているように、本実施の形態に係るＡＬＤ装置１０は筐体１１を備えており、筐体１１の前面にはカセット授受ユニット１２が設備されている。カセット授受ユニット１２はウエハ１のキャリアであるカセット２を二台載置することができるカセットステージ１３を備えており、カセットステージ１３は９０度回転することにより、カセット２を水平姿勢にさせるように構成されている。カセットステージ１３の下方にはウエハ姿勢整合装置１４が二組設備されている。
そして、外部搬送装置（図示せず）によって搬送されて来たカセット２がカセットステージ１３に垂直姿勢（カセット２に収納されたウエハ１が垂直になる状態）で載置されると、ウエハ姿勢整合装置１４がカセット２に収納されたウエハ１のノッチやオリエンテーションフラットが同一になるようにウエハ１の姿勢を整合する。 As shown in FIG. 1, the ALD apparatus 10 according to the present embodiment includes a casing 11, and a cassette transfer unit 12 is installed on the front surface of the casing 11. The cassette transfer unit 12 includes a cassette stage 13 on which two cassettes 2 serving as carriers of the wafer 1 can be placed. The cassette stage 13 is rotated 90 degrees so that the cassette 2 is in a horizontal posture. It is configured. Below the cassette stage 13, two sets of wafer posture alignment devices 14 are installed.
When the cassette 2 transported by an external transport device (not shown) is placed on the cassette stage 13 in a vertical posture (the wafer 1 stored in the cassette 2 is vertical), the wafer posture alignment is performed. The apparatus 14 aligns the posture of the wafer 1 so that the notches and the orientation flats of the wafer 1 stored in the cassette 2 are the same.

筐体１１の内部にはカセット授受ユニット１２に対向してカセット棚１５が設備されており、カセット授受ユニット１２の上方には予備カセット棚１６が設備されている。
カセット授受ユニット１２とカセット棚１５との間には、カセット移載装置１７が設備されている。カセット移載装置１７は前後方向に進退可能なロボットアーム１８を備えており、ロボットアーム１８は横行および昇降可能に構成されている。ロボットアーム１８は進退、昇降および横行の協働によって、カセットステージ１３の上の水平姿勢となったカセット２をカセット棚１５または予備カセット棚１６へ搬送して移載するように構成されている。 A cassette shelf 15 is provided inside the casing 11 so as to face the cassette delivery unit 12, and a spare cassette shelf 16 is provided above the cassette delivery unit 12.
A cassette transfer device 17 is installed between the cassette transfer unit 12 and the cassette shelf 15. The cassette transfer device 17 includes a robot arm 18 that can move back and forth in the front-rear direction, and the robot arm 18 is configured to be able to traverse and move up and down. The robot arm 18 is configured to transport and transfer the cassette 2 in a horizontal posture on the cassette stage 13 to the cassette shelf 15 or the spare cassette shelf 16 by advancing, retreating, raising and lowering, and traversing.

カセット棚１５の後方には複数枚のウエハ１を一括して移載することができるウエハ移載装置１９が回転および昇降可能に設備されている。ウエハ移載装置１９は進退可能なウエハ保持部２０を備えており、ウエハ保持部２０には複数枚のウエハ保持プレート２１が水平に取り付けられている。なお、ウエハ移載装置１９はウエハ１を一枚ずつ移載するように構成される場合もある。
ウエハ移載装置１９の後方には、複数枚のウエハ１を保持したボート２５を昇降させるボートエレベータ２２が設備されており、ボートエレベータ２２のアーム２３にはボート２５がシールキャップ２４を介して水平に設置されている。 Behind the cassette shelf 15, a wafer transfer device 19 that can transfer a plurality of wafers 1 at once is installed so as to be able to rotate and move up and down. The wafer transfer device 19 includes a wafer holder 20 that can be moved back and forth. A plurality of wafer holding plates 21 are horizontally attached to the wafer holder 20. The wafer transfer device 19 may be configured to transfer the wafers 1 one by one.
Behind the wafer transfer device 19, a boat elevator 22 for moving up and down a boat 25 holding a plurality of wafers 1 is installed. The boat 25 is placed horizontally on the arm 23 of the boat elevator 22 via a seal cap 24. Is installed.

図２に示されているように、シールキャップ２４はプロセスチューブ３１の炉口３３の内径よりも大径の外径を有する円盤形状に形成されている。シールキャップ２４はプロセスチューブ３１の下端面にシールリング２４ａを挟んで当接することにより、プロセスチューブ３１の炉口３３を閉塞するようになっている。シールキャップ２４の中心線上にはボート２５が断熱キャップ部２６を介して垂直に立脚されて支持されている。
シールキャップ２４の中心線上には回転軸２７が挿通されており、回転軸２７はシールキャップ２４と共に昇降し、かつ、回転駆動装置２８によって回転されるように構成されている。回転軸２７の上端には支持板２９が水平に固定されており、支持板２９の上にはボート２５が断熱キャップ部２６を介して垂直に立脚されて支持されている。 As shown in FIG. 2, the seal cap 24 is formed in a disk shape having an outer diameter larger than the inner diameter of the furnace port 33 of the process tube 31. The seal cap 24 is configured to close the furnace port 33 of the process tube 31 by contacting the lower end surface of the process tube 31 with the seal ring 24 a interposed therebetween. On the center line of the seal cap 24, a boat 25 is vertically supported through a heat insulating cap portion 26 and supported.
A rotation shaft 27 is inserted on the center line of the seal cap 24, and the rotation shaft 27 moves up and down together with the seal cap 24 and is rotated by a rotation drive device 28. A support plate 29 is horizontally fixed to the upper end of the rotary shaft 27, and the boat 25 is vertically supported on and supported by the support plate 29 via a heat insulating cap portion 26.

ボート２５は上下で一対の端板２５ａ、２５ｂと、両端板２５ａと２５ｂとの間に架設されて垂直に配設された複数本（本実施の形態では三本）の保持部材２５ｃとを備えている。各保持部材２５ｃには多数条の保持溝２５ｄが長手方向に等間隔に配されて、同一平面内で互いに対向して開口するように没設されている。
そして、ウエハ１の外周縁辺が各保持部材２５ｃの多数条の保持溝２５ｄ間にそれぞれ挿入されることにより、複数枚のウエハ１がボート２５に水平にかつ互いに中心を揃えられた状態で整列されて保持されるようになっている。 The boat 25 includes a pair of end plates 25a and 25b at the top and bottom, and a plurality of (three in this embodiment) holding members 25c that are installed between the both end plates 25a and 25b and arranged vertically. ing. Each holding member 25c is provided with a large number of holding grooves 25d arranged at equal intervals in the longitudinal direction so as to be opened facing each other in the same plane.
Then, by inserting the outer peripheral edges of the wafers 1 between the multiple holding grooves 25d of the holding members 25c, the plurality of wafers 1 are aligned horizontally on the boat 25 with their centers aligned. Are to be held.

図２〜図４に示されているように、ＡＬＤ装置１０は石英（ＳｉＯ2 ）が用いられて一体的に形成されたプロセスチューブ３１を備えている。プロセスチューブ３１は一端が開口し他端が閉塞した円筒形状に形成されており、プロセスチューブ３１は中心線が垂直になるように縦に配されて固定的に支持されている。
プロセスチューブ３１の筒中空部は複数枚のウエハ１を収容して処理する処理室３２を形成しており、プロセスチューブ３１の下端開口はウエハ１を出し入れする炉口３３を形成している。プロセスチューブ３１の内径は取り扱うウエハ１の最大外径よりも大きくなるように設定されている。
プロセスチューブ３１の外部にはプロセスチューブ３１の周囲を包囲するヒータユニット３４が同心円に設備されており、ヒータユニット３４は処理室３２を全体にわたって均一または所定の温度分布に加熱するように構成されている。ヒータユニット３４はＡＬＤ装置１０の筐体１１に支持されることにより垂直に据え付けられた状態になっている。 As shown in FIGS. 2 to 4, the ALD apparatus 10 includes a process tube 31 that is integrally formed using quartz (SiO 2 ). The process tube 31 is formed in a cylindrical shape having one end opened and the other end closed. The process tube 31 is vertically arranged so that the center line is vertical and is fixedly supported.
A cylindrical hollow portion of the process tube 31 forms a processing chamber 32 for accommodating and processing a plurality of wafers 1, and a lower end opening of the process tube 31 forms a furnace port 33 for taking in and out the wafer 1. The inner diameter of the process tube 31 is set to be larger than the maximum outer diameter of the wafer 1 to be handled.
A heater unit 34 surrounding the process tube 31 is concentrically provided outside the process tube 31, and the heater unit 34 is configured to heat the processing chamber 32 uniformly or with a predetermined temperature distribution throughout. Yes. The heater unit 34 is installed vertically by being supported by the casing 11 of the ALD apparatus 10.

プロセスチューブ３１の炉口３３の付近における側壁の一部には、処理室３２を真空引きする排気管３５の一端が接続されている。図３に示されているように、排気管３５の他端は可変流量制御弁３７を介して真空ポンプ３６に接続されている。
なお、可変流量制御弁３７は弁体の開度を調節して排気量を調整することにより、処理室３２の圧力を制御するように構成されている。 One end of an exhaust pipe 35 that evacuates the processing chamber 32 is connected to a part of the side wall of the process tube 31 near the furnace port 33. As shown in FIG. 3, the other end of the exhaust pipe 35 is connected to a vacuum pump 36 via a variable flow rate control valve 37.
The variable flow rate control valve 37 is configured to control the pressure in the processing chamber 32 by adjusting the exhaust amount by adjusting the opening of the valve body.

プロセスチューブ３１の炉口３３の付近の側壁における排気管３５と略１８０度反対側の位置には、ガス供給管３８の一端が接続されている。図３に示されているように、ガス供給管３８の他端はＡＬＤ法における所定のガス種を供給するガス供給源３９に接続されている。ガス供給管３８の途中にはガス供給源３９の側から順に、可変流量制御弁４０と上流側開閉弁４１とガス溜め４２と下流側開閉弁４３とが介設されている。
プロセスチューブ３１におけるガス供給管３８と対向する部分には、樋形状の隔壁４４がプロセスチューブ３１の内周面と平行で上下方向に延在するように敷設されており、隔壁４４はガス供給室４５を形成するように構成されている。
図４に示されているように、隔壁４４には複数個の吹出口４６がボート２５の上下で隣り合うウエハ１、１間に対向するように配列されて開設されており、各吹出口４６はガス供給室４５に供給されたガスを均等に吹き出させるように設定されている。
吹出口４６の開口面積はガス供給室４５と処理室３２との差圧が小さい場合には、上流側から下流側まで同一の開口面積で同一の開口ピッチに設定することが好ましい。しかし、ガス供給室４５と処理室３２との差圧が大きい場合には、上流側から下流側に向かって吹出口４６の開口面積を大きくするか、開口ピッチを小さくすることが好ましい。 One end of a gas supply pipe 38 is connected to a position on the side wall of the process tube 31 in the vicinity of the furnace port 33 that is approximately 180 degrees opposite to the exhaust pipe 35. As shown in FIG. 3, the other end of the gas supply pipe 38 is connected to a gas supply source 39 that supplies a predetermined gas type in the ALD method. A variable flow rate control valve 40, an upstream side open / close valve 41, a gas reservoir 42, and a downstream side open / close valve 43 are interposed in the middle of the gas supply pipe 38 from the gas supply source 39 side.
In the portion of the process tube 31 facing the gas supply pipe 38, a bowl-shaped partition wall 44 is laid so as to extend in the vertical direction in parallel with the inner peripheral surface of the process tube 31. 45 is formed.
As shown in FIG. 4, a plurality of air outlets 46 are arranged in the partition wall 44 so as to face each other between the wafers 1 adjacent to each other above and below the boat 25. Is set so that the gas supplied to the gas supply chamber 45 is blown out evenly.
When the differential pressure between the gas supply chamber 45 and the processing chamber 32 is small, the opening area of the outlet 46 is preferably set to the same opening pitch with the same opening area from the upstream side to the downstream side. However, when the differential pressure between the gas supply chamber 45 and the processing chamber 32 is large, it is preferable to increase the opening area of the outlet 46 from the upstream side toward the downstream side or to decrease the opening pitch.

プロセスチューブ３１の炉口３３の付近の側壁における排気管３５と略９０度離れた位置には、プラズマ室４８を形成した樋形状の隔壁（以下、プラズマ室壁という。）４７がプロセスチューブ３１の内周面と平行で上下方向に延在するように敷設されている。
図３に示されているように、プラズマ室壁４７の内向きの側壁の断面形状は円弧形に形成されており、その周方向の幅は略６０度に設定されている。プラズマ室壁４７の内向きの側壁における排気管３５側の端部には、複数個の吹出口４９がボート２５の上下で隣り合うウエハ１、１間に対向するように配列されて開設されており、各吹出口４９はプラズマ室４８に供給されたガスを均等に吹き出させるように設定されている。そして、プラズマ室壁４７の吹出口４９と、ガス供給室４５を形成した隔壁４４の吹出口４６との位相差は、約１２０度に設定されている。
プラズマ室壁４７の吹出口４９の開口面積はプラズマ室４８と処理室３２との差圧が小さい場合には、上流側から下流側まで同一の開口面積で同一の開口ピッチに設定することが好ましい。しかし、プラズマ室４８と処理室３２との差圧が大きい場合には、上流側から下流側に向かって吹出口４９の開口面積を大きくするか、開口ピッチを小さくすることが好ましい。 A saddle-shaped partition wall (hereinafter referred to as a plasma chamber wall) 47 in which a plasma chamber 48 is formed is located on the side wall of the process tube 31 near the furnace port 33 at a position approximately 90 degrees away from the exhaust pipe 35. It is laid so as to extend in the vertical direction parallel to the inner peripheral surface.
As shown in FIG. 3, the cross-sectional shape of the inward side wall of the plasma chamber wall 47 is formed in an arc shape, and the circumferential width is set to about 60 degrees. At the end of the plasma chamber wall 47 facing the exhaust pipe 35 on the inward side wall, a plurality of air outlets 49 are arranged and opened so as to face each other between the wafers 1 adjacent to each other above and below the boat 25. The air outlets 49 are set so that the gas supplied to the plasma chamber 48 is evenly blown out. The phase difference between the air outlet 49 of the plasma chamber wall 47 and the air outlet 46 of the partition wall 44 forming the gas supply chamber 45 is set to about 120 degrees.
When the differential pressure between the plasma chamber 48 and the processing chamber 32 is small, the opening area of the air outlet 49 of the plasma chamber wall 47 is preferably set to the same opening pitch with the same opening area from the upstream side to the downstream side. . However, when the differential pressure between the plasma chamber 48 and the processing chamber 32 is large, it is preferable to increase the opening area of the air outlet 49 or reduce the opening pitch from the upstream side toward the downstream side.

プロセスチューブ３１の炉口３３の付近の側壁におけるプラズマ室壁４７の吹出口４９と反対側の位置には、ガス供給管５０の一端が接続されており、ガス供給管５０の他端はＡＬＤ法における所定のガス種を供給するガス供給源５１に接続されている。ガス供給管５０の途中には可変流量制御弁５２と開閉弁５３とが、ガス供給源５１の側から順に介設されている。
また、ガス供給管５０のプラズマ室壁４７の内部側端にはノズル５４の一端が接続されており、ノズル５４は垂直に立脚されている。ノズル５４には複数個のガス供給口５５が垂直方向に等間隔に配置されて、それぞれ周方向内向きに開設されている。 One end of the gas supply pipe 50 is connected to a position on the side wall of the process tube 31 near the furnace port 33 on the side opposite to the air outlet 49 of the plasma chamber wall 47, and the other end of the gas supply pipe 50 is connected to the ALD method. Is connected to a gas supply source 51 for supplying a predetermined gas type. In the middle of the gas supply pipe 50, a variable flow rate control valve 52 and an on-off valve 53 are provided in order from the gas supply source 51 side.
In addition, one end of a nozzle 54 is connected to the inner side end of the plasma chamber wall 47 of the gas supply pipe 50, and the nozzle 54 stands vertically. In the nozzle 54, a plurality of gas supply ports 55 are arranged at equal intervals in the vertical direction, and are opened inward in the circumferential direction.

プラズマ室４８の内部には一対の保護管５６、５６が、プラズマ室４８の中心線を挟んで互いに反対側に対称形にそれぞれ配置されて、上下方向に延在するように敷設されている。各保護管５６は誘電体が使用されて上端が閉塞した細長い円形のパイプ形状に形成されており、各保護管５６の下端部は適度に屈曲されて、プロセスチューブ３１の側壁を貫通して外部に突き出されている。各保護管５６の中空部内は処理室３２の外部（大気圧）に連通されている。
両保護管５６、５６の中空部には導電材料が使用されて細長い棒状に形成された一対の棒状電極５７、５７がそれぞれ同心的に敷設されており、両棒状電極５７、５７間には高周波電力を印加する高周波電源５８が整合器５９を介して電気的に接続されている。
高周波電源５８および整合器５９はコントローラ６０によって制御されるようになっている。また、コントローラ６０は可変流量制御弁３７、４０、５２や開閉弁４１、４３、５３およびヒータユニット３４等を制御するようになっている。 Inside the plasma chamber 48, a pair of protective tubes 56, 56 are arranged symmetrically on opposite sides of the center line of the plasma chamber 48, and are laid so as to extend in the vertical direction. Each protective tube 56 is formed in the shape of an elongated circular pipe using a dielectric material and closed at the upper end. The lower end of each protective tube 56 is appropriately bent and penetrates the side wall of the process tube 31 to the outside. Is sticking out. The inside of the hollow portion of each protective tube 56 is communicated with the outside (atmospheric pressure) of the processing chamber 32.
A pair of rod-shaped electrodes 57 and 57 formed in the shape of an elongated rod using a conductive material are concentrically laid in the hollow portions of both the protective tubes 56 and 56, respectively. A high frequency power source 58 for applying power is electrically connected via a matching unit 59.
The high frequency power supply 58 and the matching unit 59 are controlled by a controller 60. The controller 60 controls the variable flow rate control valves 37, 40, 52, the on-off valves 41, 43, 53, the heater unit 34, and the like.

プロセスチューブ３１の炉口３３の付近の側壁におけるプラズマ室壁４７と１８０度反対側の位置には、カスケード温度計としての熱電対６１を敷設するための保護管６２が一対、それぞれ垂直に立設されている。各熱電対６１はコントローラ６０に温度測定結果を送信するようになっており、コントローラ６０は温度測定結果に基づいてヒータユニット３４等を制御するようになっている。   A pair of protective tubes 62 for laying a thermocouple 61 as a cascade thermometer is vertically installed at a position 180 degrees opposite to the plasma chamber wall 47 in the side wall near the furnace port 33 of the process tube 31. Has been. Each thermocouple 61 transmits the temperature measurement result to the controller 60, and the controller 60 controls the heater unit 34 and the like based on the temperature measurement result.

プロセスチューブ３１の外部には、プラズマの発光状態を検出する検出手段としての光センサ６３が配置されている。光センサ６３の入力端には光ファイバ６４の基端部が接続されており、光ファイバ６４の採光子としての先端部はプロセスチューブ３１の外部における一対の保護管５６、５６の間に対応する部位に配置されている。光センサ６３の出力端はコントローラ６０に接続されており、コントローラ６０は光センサ６３からの信号に基づきプラズマの着火ミスや着火遅延を判断することにより、高周波電源５８を適切に制御するように構成されている。   An optical sensor 63 is disposed outside the process tube 31 as detection means for detecting the light emission state of plasma. A base end portion of the optical fiber 64 is connected to the input end of the optical sensor 63, and a distal end portion of the optical fiber 64 serving as a light collector corresponds to the space between the pair of protective tubes 56 and 56 outside the process tube 31. It is placed at the site. The output end of the optical sensor 63 is connected to the controller 60, and the controller 60 is configured to appropriately control the high-frequency power supply 58 by determining a plasma ignition error or an ignition delay based on a signal from the optical sensor 63. Has been.

次に、以上の構成に係るＡＬＤ装置１０を使用したＩＣの製造方法における成膜工程を説明する。   Next, a film forming process in an IC manufacturing method using the ALD apparatus 10 having the above configuration will be described.

まず、基板処理装置としての全体の流れを説明する。
図２に示されているように、ＡＬＤ装置１０の被処理基板としてのウエハ１は複数枚がボート２５にウエハ移載装置１９によって装填（チャージング）される。
複数枚のウエハ１が装填されたボート２５はシールキャップ２４および回転軸２７と共にボートエレベータ２２によって上昇されて、プロセスチューブ３１の処理室３２に搬入（ボートローディング）される。 First, the overall flow as a substrate processing apparatus will be described.
As shown in FIG. 2, a plurality of wafers 1 as substrates to be processed in the ALD apparatus 10 are loaded (charged) into the boat 25 by the wafer transfer apparatus 19.
The boat 25 loaded with the plurality of wafers 1 is lifted by the boat elevator 22 together with the seal cap 24 and the rotary shaft 27 and is loaded into the processing chamber 32 of the process tube 31 (boat loading).

図５に示されているように、ウエハ１群を保持したボート２５が処理室３２に搬入されて、処理室３２がシールキャップ２４によってシールされると、処理室３２は排気管３５に接続された真空ポンプ３６によって所定の圧力以下に排気され、ヒータユニット３４への供給電力が上昇されることにより、処理室３２の温度が所定の温度に上昇される。
ヒータユニット３４がホットウオール形構造であることにより、処理室３２の温度は全体にわたって均一に維持された状態になり、その結果、ボート２５に保持されたウエハ１群の温度分布は全長にわたって均一になるとともに、各ウエハ１の面内の温度分布も均一かつ同一になる。 As shown in FIG. 5, when the boat 25 holding the group of wafers is loaded into the processing chamber 32 and the processing chamber 32 is sealed by the seal cap 24, the processing chamber 32 is connected to the exhaust pipe 35. The vacuum pump 36 evacuates to a predetermined pressure or lower, and the power supplied to the heater unit 34 is increased, whereby the temperature of the processing chamber 32 is increased to a predetermined temperature.
Since the heater unit 34 has a hot-wall structure, the temperature of the processing chamber 32 is maintained uniformly throughout the entire structure. As a result, the temperature distribution of the group of wafers held in the boat 25 is uniform over the entire length. At the same time, the in-plane temperature distribution of each wafer 1 is uniform and the same.

処理室３２の温度が予め設定された値に達して安定した後に、後述するＡＬＤ法による成膜作業が実施される。   After the temperature of the processing chamber 32 reaches a preset value and stabilizes, a film forming operation by the ALD method described later is performed.

所定の成膜作業が完了すると、シールキャップ２４がボートエレベータ２２によって下降されることにより炉口３３が開口されるとともに、ボート２５に保持された状態でウエハ１群が炉口３３から処理室３２の外部に搬出（ボートアンローディング）される。
処理室３２の外部に搬出されたウエハ１群はボート２５からウエハ移載装置１９によってディスチャージングされる（降ろされる）。
以降、前記した作動が繰り返されることにより、複数枚のウエハ１が一括してバッチ処理される。 When the predetermined film forming operation is completed, the seal cap 24 is lowered by the boat elevator 22 to open the furnace port 33, and the group of wafers is held from the furnace port 33 to the processing chamber 32 while being held by the boat 25. Unloading (boat unloading).
The group of wafers carried out of the processing chamber 32 is discharged (lowered) from the boat 25 by the wafer transfer device 19.
Thereafter, the plurality of wafers 1 are batch processed by repeating the above-described operation.

次に、ＡＬＤ法による成膜作業を、ジクロロシランガスとアンモニアガスとを用いてシリコン窒化膜を形成する場合について説明する。
ジクロロシランガスとアンモニアガスとを用いてシリコン窒化膜を形成する場合には、次の第一ステップ、第二ステップおよび第三ステップが順に実施される。 Next, a film forming operation by the ALD method will be described in the case where a silicon nitride film is formed using dichlorosilane gas and ammonia gas.
When a silicon nitride film is formed using dichlorosilane gas and ammonia gas, the following first step, second step, and third step are sequentially performed.

第一ステップにおいては、プラズマ励起の必要なアンモニアガスと、プラズマ励起の必要のないジクロロシランガスとが併行して流される。
図６に示されているように、ガス供給管５０に設けた開閉弁５３および排気管３５に設けた可変流量制御弁３７が共に開けられる。ガス供給管５０から可変流量制御弁５２によって流量調整されたアンモニアガス７１が、ノズル５４のガス供給口５５からプラズマ室４８へ噴出する。
また、一対の棒状電極５７、５７間には高周波電力が高周波電源５８から整合器５９を介して印加される。プラズマ室４８に噴出したアンモニアガス７１はプラズマ励起され、活性種７２として処理室３２に供給されつつ排気管３５から排気される。
アンモニアガス７１をプラズマ励起することによって活性種７２として処理室３２へ供給し排気するときは、可変流量制御弁３７を適正に調整することにより、処理室３２の圧力を１０〜１００Ｐａとする。
可変流量制御弁５２によって制御されるアンモニアガス７１の供給流量は、１０００〜１００００ｓｃｃｍである。
アンモニアガス７１をプラズマ励起することにより得られた活性種７２にウエハ１を晒す時間は、２〜１２０秒間である。
このときのヒータユニット３４の制御温度は、ウエハの温度が３００〜６００℃になるように設定されている。アンモニアガス７１は反応温度が高いために、このときのウエハ温度（３００〜６００℃）では反応しない。したがって、プラズマ励起することによって活性種７２としてから供給することにより、ウエハ１の温度が低い温度範囲のままであっても、アンモニアガス７１をウエハに堆積させることができる。 In the first step, ammonia gas that requires plasma excitation and dichlorosilane gas that does not require plasma excitation are caused to flow in parallel.
As shown in FIG. 6, both the open / close valve 53 provided in the gas supply pipe 50 and the variable flow rate control valve 37 provided in the exhaust pipe 35 are opened. Ammonia gas 71 whose flow rate is adjusted by the variable flow rate control valve 52 from the gas supply pipe 50 is ejected from the gas supply port 55 of the nozzle 54 to the plasma chamber 48.
Further, high frequency power is applied from a high frequency power source 58 through a matching unit 59 between the pair of rod-shaped electrodes 57 and 57. The ammonia gas 71 ejected into the plasma chamber 48 is excited by plasma and is exhausted from the exhaust pipe 35 while being supplied to the processing chamber 32 as the active species 72.
When the ammonia gas 71 is excited by plasma and supplied to the processing chamber 32 as the active species 72 and exhausted, the variable flow rate control valve 37 is adjusted appropriately to set the pressure in the processing chamber 32 to 10 to 100 Pa.
The supply flow rate of the ammonia gas 71 controlled by the variable flow rate control valve 52 is 1000 to 10000 sccm.
The time for exposing the wafer 1 to the active species 72 obtained by exciting the ammonia gas 71 with plasma is 2 to 120 seconds.
The control temperature of the heater unit 34 at this time is set so that the wafer temperature is 300 to 600 ° C. Since the ammonia gas 71 has a high reaction temperature, it does not react at the wafer temperature (300 to 600 ° C.) at this time. Therefore, ammonia gas 71 can be deposited on the wafer even if the temperature of the wafer 1 remains in a low temperature range by supplying it as the active species 72 by plasma excitation.

このアンモニアガス７１をプラズマ励起することによって活性種７２として供給しているときに、図６に示されているように、ガス供給管３８の上流側開閉弁４１が開かれるとともに、下流側開閉弁４３が閉められることにより、プラズマ励起の必要のないジクロロシランガス７３がガス溜め４２へ流される。これにより、ジクロロシランガス７３が上流側開閉弁４１と下流側開閉弁４３との間に設けたガス溜め４２に溜まる。
このとき、処理室３２に流れているガスはアンモニアガス７１をプラズマ励起することにより得られた活性種７２であり、処理室３２内にはジクロロシランガス７３は存在しない。したがって、アンモニアガス７１は気相反応を起こすことはなく、プラズマによって励起されて活性種７２となったアンモニアガス７１は、ウエハ１の上の下地膜と表面反応する。 When the ammonia gas 71 is supplied as active species 72 by plasma excitation, the upstream side open / close valve 41 of the gas supply pipe 38 is opened and the downstream side open / close valve is opened as shown in FIG. By closing 43, dichlorosilane gas 73 that does not require plasma excitation is caused to flow to the gas reservoir 42. Thereby, the dichlorosilane gas 73 accumulates in the gas reservoir 42 provided between the upstream side open / close valve 41 and the downstream side open / close valve 43.
At this time, the gas flowing into the processing chamber 32 is an active species 72 obtained by exciting the ammonia gas 71 with plasma, and the dichlorosilane gas 73 does not exist in the processing chamber 32. Therefore, the ammonia gas 71 does not cause a gas phase reaction, and the ammonia gas 71 that has been excited by the plasma to become the active species 72 reacts with the underlying film on the wafer 1.

第二ステップにおいては、図７に示されているように、ガス供給管５０の開閉弁５３が閉められて、アンモニアガス７１の供給は停止される。
他方、ジクロロシランガス７３のガス溜め４２への供給は継続される。所定圧かつ所定量のジクロロシランガス７３がガス溜め４２に溜まったら、上流側開閉弁４１も閉められる（図３参照）。これにより、ジクロロシランガス７３がガス溜め４２に閉じ込められる。ジクロロシランガス７３は圧力が２００００Ｐａ以上になるようにガス溜め４２内に溜められる。
また、ガス溜め４２と処理室３２との間のコンダクタンスが１．５×１０-3ｍ3 ／ｓ以上になるように、可変流量制御弁４０および開閉弁４１、４３と可変流量制御弁３７とがコントローラ６０によって制御される。
さらに、処理室３２の容積とこれに対する必要なガス溜め４２の容積との比として考えると、処理室３２の容積が１００ｌ（リットル）の場合においては、ガス溜め４２の容積は１００〜３００ｃｃであることが好ましく、容積比としてはガス溜め４２は処理室３２の容積の１／１０００〜３／１０００倍とすることが好ましい。
そして、図７に示されているように、排気管３５の可変流量制御弁３７は開いたままにして、処理室３２を真空ポンプ３６によって２０Ｐａ以下に排気することにより、残留したアンモニアガス７１を処理室３２から排除する。この際に、窒素ガス等の不活性ガスを処理室３２に供給すると、残留したアンモニアガス７１を処理室３２からより一層効果的に排除することができる。 In the second step, as shown in FIG. 7, the on-off valve 53 of the gas supply pipe 50 is closed and the supply of the ammonia gas 71 is stopped.
On the other hand, the supply of the dichlorosilane gas 73 to the gas reservoir 42 is continued. When a predetermined pressure and a predetermined amount of dichlorosilane gas 73 is accumulated in the gas reservoir 42, the upstream side open / close valve 41 is also closed (see FIG. 3). Thereby, the dichlorosilane gas 73 is confined in the gas reservoir 42. The dichlorosilane gas 73 is stored in the gas reservoir 42 so that the pressure becomes 20000 Pa or more.
In addition, the variable flow rate control valve 40, the on-off valves 41 and 43, the variable flow rate control valve 37, and the like so that the conductance between the gas reservoir 42 and the processing chamber 32 is 1.5 × 10 −3 m 3 / s or more. Is controlled by the controller 60.
Further, when considering the ratio between the volume of the processing chamber 32 and the volume of the required gas reservoir 42, the volume of the gas reservoir 42 is 100 to 300 cc when the volume of the processing chamber 32 is 100 l (liter). The volume ratio of the gas reservoir 42 is preferably 1/1000 to 3/1000 times the volume of the processing chamber 32.
Then, as shown in FIG. 7, the variable flow rate control valve 37 of the exhaust pipe 35 is kept open, and the processing chamber 32 is exhausted to 20 Pa or less by the vacuum pump 36, whereby the remaining ammonia gas 71 is removed. Excluded from the processing chamber 32. At this time, if an inert gas such as nitrogen gas is supplied to the processing chamber 32, the remaining ammonia gas 71 can be more effectively removed from the processing chamber 32.

第三ステップにおいては、処理室３２の排気が終わったら、図８に示されているように、排気管３５の可変流量制御弁３７が閉じられて、排気が停止されるとともに、ガス供給管３８の下流側開閉弁４３が開かれる。これにより、ガス溜め４２に溜められたジクロロシランガス７３が処理室３２に一気に供給される。このとき、排気管３５の可変流量制御弁３７が閉じられているので、処理室３２内の圧力は急激に上昇して、約９３１Ｐａ（７Ｔｏｒｒ）まで昇圧する。
ジクロロシランガス７３を供給するための時間は２〜４秒に設定し、その後、上昇した圧力雰囲気中に晒す時間を２〜４秒に設定し、合計６秒とする。このときのウエハの温度はアンモニアガス７１の供給時と同じく、３００〜６００℃である。
このジクロロシランガス７３の供給によって、ウエハ１の下地膜の上のアンモニアガス７１とジクロロシランガス７３とが表面反応して、シリコン窒化膜がウエハ１の上に形成される。
図示は省略するが、成膜後には下流側開閉弁４３が閉じられるとともに、可変流量制御弁３７が開けられて、処理室３２が真空排気され、成膜に寄与した後に残留したジクロロシランガス７３が排除される。このときに窒素ガス等の不活性ガスを処理室３２に供給すると、成膜に寄与した後に残留したジクロロシランガス７３を処理室３２からより一層効果的に排除することができる。
そして、上流側開閉弁４１が開かれて、第一ステップのガス溜め４２へのジクロロシランガス７３の供給が開始される。 In the third step, when the exhaust of the processing chamber 32 is finished, as shown in FIG. 8, the variable flow rate control valve 37 of the exhaust pipe 35 is closed to stop the exhaust and the gas supply pipe 38. The downstream on-off valve 43 is opened. Accordingly, the dichlorosilane gas 73 stored in the gas reservoir 42 is supplied to the processing chamber 32 at a stretch. At this time, since the variable flow rate control valve 37 of the exhaust pipe 35 is closed, the pressure in the processing chamber 32 rapidly increases and is increased to about 931 Pa (7 Torr).
The time for supplying the dichlorosilane gas 73 is set to 2 to 4 seconds, and then the time for exposure to the elevated pressure atmosphere is set to 2 to 4 seconds, for a total of 6 seconds. At this time, the temperature of the wafer is 300 to 600 ° C., as in the case of supplying the ammonia gas 71.
By supplying the dichlorosilane gas 73, the ammonia gas 71 and the dichlorosilane gas 73 on the base film of the wafer 1 react with each other to form a silicon nitride film on the wafer 1.
Although illustration is omitted, after the film formation, the downstream on-off valve 43 is closed, the variable flow control valve 37 is opened, the processing chamber 32 is evacuated, and the dichlorosilane gas 73 remaining after contributing to the film formation is removed. Eliminated. If an inert gas such as nitrogen gas is supplied to the processing chamber 32 at this time, the dichlorosilane gas 73 remaining after contributing to film formation can be more effectively removed from the processing chamber 32.
Then, the upstream side open / close valve 41 is opened, and supply of the dichlorosilane gas 73 to the gas reservoir 42 in the first step is started.

以上の第一ステップ〜第三ステップが１サイクルとされ、このサイクルが複数回繰り返されることにより、所定の膜厚のシリコン窒化膜がウエハ１の上に形成される。   The above first to third steps are defined as one cycle, and a silicon nitride film having a predetermined film thickness is formed on the wafer 1 by repeating this cycle a plurality of times.

ところで、ＡＬＤ法においては、原料ガスは下地膜表面に吸着する。この原料ガスの吸着量は、原料ガスの圧力および原料ガスの暴露時間に比例する。したがって、所望する一定量の原料ガスを短時間で吸着させるためには、原料ガスの圧力を短時間で上昇させる必要がある。
本実施の形態においては、可変流量制御弁３７を閉じたうえで、ガス溜め４２に溜めたジクロロシランガス７３を瞬間的に処理室３２に供給しているので、処理室３２のジクロロシランガス７３の圧力を急激に上昇させることができ、所望する一定量のジクロロシランガス７３を瞬間的に吸着させることができる。 By the way, in the ALD method, the source gas is adsorbed on the surface of the base film. The amount of adsorption of the raw material gas is proportional to the pressure of the raw material gas and the exposure time of the raw material gas. Therefore, in order to adsorb a desired amount of source gas in a short time, it is necessary to increase the pressure of the source gas in a short time.
In the present embodiment, since the dichlorosilane gas 73 stored in the gas reservoir 42 is instantaneously supplied to the processing chamber 32 after the variable flow rate control valve 37 is closed, the pressure of the dichlorosilane gas 73 in the processing chamber 32 is increased. Can be rapidly increased, and a desired amount of dichlorosilane gas 73 can be instantaneously adsorbed.

しかも、本実施の形態では、ジクロロシランガス７３をガス溜め４２に溜めるための特別なステップ（時間）を必要としない。なぜならば、アンモニアガス７１をプラズマ励起することによって活性種７２として供給しつつ処理室３２を排気している間に、ガス溜め４２にジクロロシランガス７３を並行して溜めているからである。
また、処理室３２内を排気してアンモニアガス７１を除去してからジクロロシランガス７３を処理室３２に供給するので、アンモニアガス７１とジクロロシランガス７３とはウエハ１に向かう途中で反応しない。つまり、処理室３２に供給されたジクロロシランガス７３は、ウエハ１に予め吸着したアンモニアガス７１だけと有効に反応する。 Moreover, in the present embodiment, a special step (time) for storing the dichlorosilane gas 73 in the gas reservoir 42 is not required. This is because dichlorosilane gas 73 is stored in parallel in the gas reservoir 42 while the processing chamber 32 is exhausted while ammonia gas 71 is supplied as active species 72 by plasma excitation.
Further, since the dichlorosilane gas 73 is supplied to the processing chamber 32 after exhausting the inside of the processing chamber 32 and removing the ammonia gas 71, the ammonia gas 71 and the dichlorosilane gas 73 do not react on the way to the wafer 1. That is, the dichlorosilane gas 73 supplied to the processing chamber 32 effectively reacts only with the ammonia gas 71 adsorbed in advance on the wafer 1.

ところで、以上のＡＬＤ装置１０を使用したＡＬＤ法においては、アンモニアガス７１の供給とジクロロシランガス７３の供給とが短時間で切り換えられ、その都度、一対の棒状電極５７、５７によるプラズマの点火と消火とが繰り返される。このようにプラズマの点火と消火とが繰り返されると、プラズマ状態が最も不安定な着火状態が何度も繰り返されるために、着火ミスや着火遅延が発生し易いという問題点があることが本発明者によって明らかにされた。   By the way, in the ALD method using the ALD apparatus 10 described above, the supply of the ammonia gas 71 and the supply of the dichlorosilane gas 73 are switched in a short time. Is repeated. If plasma ignition and extinguishing are repeated in this way, the ignition state in which the plasma state is the most unstable is repeated many times, so that there is a problem that ignition mistakes and ignition delays are likely to occur. Revealed by the

そこで、本実施の形態に係るＡＤＬ装置１０においては、プロセスチューブ３１の外部にプラズマの発光状態を検出する光センサ６３を配置してプラズマの着火ミスや着火遅延を早期に検出するとともに、この検出に基づいて高周波電源５８をコントローラ６０によって制御することにより、プラズマの着火を確実に行なうことができるように構成している。   Therefore, in the ADL device 10 according to the present embodiment, an optical sensor 63 for detecting the plasma emission state is arranged outside the process tube 31 to detect plasma ignition mistakes and ignition delays at an early stage. The high-frequency power source 58 is controlled by the controller 60 based on the above, so that the plasma can be reliably ignited.

ここで、前述したＡＬＤ法においては、ウエハ１に化学吸着していない余分なアンモニアガス７１およびジクロロシランガス７３はそれらの供給後の真空排気によってその都度それぞれ排除されることにより、処理室３２において混合することがない原理上、処理室３２の内面にはシリコン窒化膜がデポジションしないので、プロセスチューブ３１の外部に光センサ６３を設置しても、プラズマの発光状態を問題なく検出することができる。   Here, in the ALD method described above, the excess ammonia gas 71 and dichlorosilane gas 73 not chemically adsorbed on the wafer 1 are respectively removed by the vacuum exhaust after their supply, thereby being mixed in the processing chamber 32. In principle, since no silicon nitride film is deposited on the inner surface of the processing chamber 32, even if the optical sensor 63 is installed outside the process tube 31, the light emission state of plasma can be detected without any problem. .

前記実施の形態によれば、次の効果が得られる。   According to the embodiment, the following effects can be obtained.

1) プロセスチューブ３１の外部にプラズマの発光状態を検出する光センサ６３を配置してプラズマの着火ミスや着火遅延を早期に検出するとともに、この検出に基づいて高周波電源５８をコントローラ６０によって制御することにより、プラズマの着火を確実に行なうことができる。 1) An optical sensor 63 for detecting the plasma emission state is disposed outside the process tube 31 to detect early plasma ignition mistakes and ignition delays, and the high frequency power supply 58 is controlled by the controller 60 based on this detection. As a result, plasma can be reliably ignited.

2) プラズマの着火を確実に行なうことにより、ＡＬＤ法によってウエハ上に適正かつ精密に成膜することができ、所謂不良ロットの発生を防止することができるので、ＩＣの製造方法の歩留りを向上させることができるとともに、ＩＣの品質および信頼性を向上させることができる。 2) By performing plasma ignition reliably, it is possible to deposit the film properly and precisely on the wafer by the ALD method, and so-called defective lots can be prevented, thus improving the yield of the IC manufacturing method. And the quality and reliability of the IC can be improved.

3) プラズマの発光状態を検出する光センサ６３をプロセスチューブ３１の外部に配置することにより、プラズマの発光状態を検出する検出手段の構成を簡単化することができるばかりでなく、検出手段を処理室３２の内部に配置することに伴う有機物汚染や金属汚染等の二次的弊害を未然に回避することができるので、ＡＬＤ装置のイニシャルコストやランニングコストを低減することができるとともに、ＩＣの製造方法の歩留りを向上させることができ、ひいてはＩＣの品質および信頼性を向上させることができる。 3) By disposing the optical sensor 63 for detecting the light emission state of the plasma outside the process tube 31, not only the configuration of the detection means for detecting the light emission state of the plasma can be simplified but also the detection means can be processed. Since secondary adverse effects such as organic matter contamination and metal contamination associated with the arrangement inside the chamber 32 can be avoided, the initial cost and running cost of the ALD apparatus can be reduced, and IC manufacturing is also possible. The yield of the method can be improved, and consequently the quality and reliability of the IC can be improved.

4) 光センサの入力端に光ファイバを接続することにより、光センサをヒータユニットから遠ざけることができるので、光センサを高温度から保護することができる。 4) By connecting an optical fiber to the input end of the optical sensor, the optical sensor can be kept away from the heater unit, so that the optical sensor can be protected from high temperatures.

なお、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々に変更が可能であることはいうまでもない。   Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

例えば、プラズマの発光状態を検出する光センサの採光子としては、光ファイバを使用するに限らず、サファイア製の導波棒等の他の導波手段を使用してもよい。   For example, the light sensor of the optical sensor for detecting the light emission state of plasma is not limited to using an optical fiber, and other waveguide means such as a sapphire waveguide rod may be used.

プラズマの発光（励起）状態を検出する検出手段は、プラズマからの発光を検出する光センサによって構成するに限らず、プラズマ励起による電磁波や磁気を検出するセンサ、プラズマ励起による静電気を検出する静電気センサ、高周波電力の通電状態を検出する電圧計や電流計等によって構成してもよい。   The detection means for detecting the light emission (excitation) state of the plasma is not limited to an optical sensor that detects light emission from the plasma, but a sensor that detects electromagnetic waves and magnetism caused by plasma excitation, and an electrostatic sensor that detects static electricity caused by plasma excitation. Alternatively, a voltmeter, an ammeter, or the like that detects the energization state of the high frequency power may be used.

前記実施の形態では、ジクロロシランとアンモニアとを交互に供給してシリコン窒化膜を低温下で適正かつ精密に形成する場合について説明したが、ＡＬＤ装置は、キャパシタの静電容量部のＴａ2 Ｏ5 膜に介在したカーボンを除去する場合、その他の膜種に介在した異物（その膜種以外の分子や原子等）を除去する場合、ウエハにＡＬＤ膜を形成する場合、拡散する場合、熱処理する場合等に適用することができる。
例えば、ＩＣの一例であるＤＲＡＭのゲート電極用の酸化膜を窒化する処理において、ガス供給管に窒素ガスまたはアンモニアガスまたは一酸化窒素（Ｎ2 Ｏ）を供給し、処理室を室温〜７５０℃に加熱することにより、酸化膜の表面を窒化することができた。
また、シリコンゲルマニウム（ＳｉＧｅ）膜が形成される前のシリコンウエハの表面を水素（Ｈ2 ）ガスの活性粒子によってプラズマ処理したところ、自然酸化膜を除去することができ、所望のＳｉＧｅ膜を形成することができた。 In the above embodiment, the case where the silicon nitride film is appropriately and precisely formed at a low temperature by alternately supplying dichlorosilane and ammonia has been described. However, the ALD apparatus uses Ta 2 O in the capacitance portion of the capacitor. 5 When removing carbon intervening in the film, removing foreign matters (molecules or atoms other than the film type) intervening in other film types, forming an ALD film on the wafer, diffusing, heat treatment It can be applied to cases.
For example, in a process of nitriding an oxide film for a gate electrode of a DRAM which is an example of an IC, nitrogen gas, ammonia gas, or nitrogen monoxide (N 2 O) is supplied to a gas supply pipe, and the processing chamber is set to room temperature to 750 ° C. The surface of the oxide film could be nitrided by heating to.
In addition, when the surface of the silicon wafer before the formation of the silicon germanium (SiGe) film is plasma-treated with active particles of hydrogen (H 2 ) gas, the natural oxide film can be removed and a desired SiGe film is formed. We were able to.

また、前記実施の形態ではＡＬＤ装置について説明したが、本発明はこれに限らず、他のＣＶＤ装置、酸化膜形成装置、拡散装置およびアニール装置等の基板処理装置全般に適用することができる。   Although the ALD apparatus has been described in the above embodiment, the present invention is not limited to this and can be applied to other substrate processing apparatuses such as other CVD apparatuses, oxide film forming apparatuses, diffusion apparatuses, and annealing apparatuses.

前記実施の形態ではウエハに処理が施される場合について説明したが、処理対象はホトマスクやプリント配線基板、液晶パネル、コンパクトディスクおよび磁気ディスク等であってもよい。   In the above embodiment, the case where the wafer is processed has been described. However, the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

本発明の実施の形態であるＡＬＤ装置を示す一部省略斜視図である。1 is a partially omitted perspective view showing an ALD apparatus according to an embodiment of the present invention. その主要部を示す正面断面図である。It is front sectional drawing which shows the principal part. 図２のIII-III 線に沿う回路図付き平面断面図である。FIG. 3 is a cross-sectional plan view with a circuit diagram taken along line III-III in FIG. 2. 図３のIV−IV線に沿う側面断面図である。It is side surface sectional drawing which follows the IV-IV line of FIG. その成膜処理時を示す側面断面図である。It is side surface sectional drawing which shows the film-forming process time. ＡＬＤ法の第一ステップを示す回路図付き平面断面図である。It is a plane sectional view with a circuit diagram showing the first step of the ALD method. ＡＬＤ法の第二ステップを示す回路図付き平面断面図である。It is a plane sectional view with a circuit diagram showing the second step of the ALD method. ＡＬＤ法の第三ステップを示す回路図付き平面断面図である。It is a top sectional view with a circuit diagram showing the 3rd step of ALD method.

符号の説明Explanation of symbols

１…ウエハ（被処理基板）、２…カセット、１０…ＡＬＤ装置（バッチ式縦形ホットウオール形リモートプラズマ処理装置）、１１…筐体、１２…カセット授受ユニット、１３…カセットステージ、１４…ウエハ姿勢整合装置、１５…カセット棚、１６…予備カセット棚、１７…カセット移載装置、１８…ロボットアーム、１９…ウエハ移載装置、２０…ウエハ保持部、２１…ウエハ保持プレート、２２…ボートエレベータ、２３…アーム、２４…シールキャップ、２４ａ…シールリング、２５…ボート、２５ａ、２５ｂ…端板、２５ｃ…保持部材、２５ｄ…保持溝、２６…断熱キャップ部、２７…回転軸、２８…回転駆動装置、２９…支持板、３１…プロセスチューブ、３２…処理室、３３…炉口、３４…ヒータユニット、３５…排気管、３６…真空ポンプ、３７…可変流量制御弁、３８…ガス供給管、３９…ガス供給源、４０…可変流量制御弁、４１…上流側開閉弁、４２…ガス溜め、４３…下流側開閉弁、４４…隔壁、４５…ガス供給室、４６…吹出口、４７…隔壁、４８…プラズマ室、４９…吹出口、５０…ガス供給管、５１…ガス供給源、５２…可変流量制御弁、５３…開閉弁、５４…ノズル、５５…ガス供給口、５６…保護管、５７…棒状電極、５８…高周波電源、５９…整合器、６０…コントローラ、６１…熱電対（カスケード温度計）、６２…保護管、６３…光センサ、６４…光ファイバ、７１…アンモニアガス、７２…活性種、７３…ジクロロシランガス。   DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate to be processed), 2 ... Cassette, 10 ... ALD apparatus (batch type vertical hot wall type remote plasma processing apparatus), 11 ... Housing, 12 ... Cassette transfer unit, 13 ... Cassette stage, 14 ... Wafer posture Alignment device, 15 ... cassette shelf, 16 ... spare cassette shelf, 17 ... cassette transfer device, 18 ... robot arm, 19 ... wafer transfer device, 20 ... wafer holder, 21 ... wafer holding plate, 22 ... boat elevator, DESCRIPTION OF SYMBOLS 23 ... Arm, 24 ... Seal cap, 24a ... Seal ring, 25 ... Boat, 25a, 25b ... End plate, 25c ... Holding member, 25d ... Holding groove, 26 ... Thermal insulation cap part, 27 ... Rotating shaft, 28 ... Rotation drive Apparatus 29 ... Support plate 31 ... Process tube 32 ... Processing chamber 33 ... Furnace port 34 ... Heater unit 35 ... Exhaust pipe, DESCRIPTION OF SYMBOLS 6 ... Vacuum pump, 37 ... Variable flow control valve, 38 ... Gas supply pipe, 39 ... Gas supply source, 40 ... Variable flow control valve, 41 ... Upstream side opening / closing valve, 42 ... Gas reservoir, 43 ... Downstream side opening / closing valve, 44 ... partition wall, 45 ... gas supply chamber, 46 ... outlet, 47 ... partition wall, 48 ... plasma chamber, 49 ... outlet, 50 ... gas supply pipe, 51 ... gas supply source, 52 ... variable flow rate control valve, 53 ... On-off valve, 54 ... Nozzle, 55 ... Gas supply port, 56 ... Protection tube, 57 ... Bar electrode, 58 ... High frequency power supply, 59 ... Matching device, 60 ... Controller, 61 ... Thermocouple (cascade thermometer), 62 ... Protection Tube, 63 ... optical sensor, 64 ... optical fiber, 71 ... ammonia gas, 72 ... active species, 73 ... dichlorosilane gas.

Claims (1)

基板を収容して処理する処理室と、前記処理室内に複数の処理ガスを互いに混合しないように交互に供給および排出するガス供給手段と、前記処理室内を排気する排気手段と、前記処理室内にてプラズマを生成させて前記処理ガスのうち少なくとも一つの処理ガスを励起させる高周波電力が印加される一対の電極と、前記処理室の外部に配置されて前記プラズマの発光状態を検出する検出手段と、前記検出手段からの信号に基づきプラズマの着火ミスや着火遅延を判断する判断手段と、を備えていることを特徴とする基板処理装置。   A processing chamber for accommodating and processing a substrate; a gas supply means for alternately supplying and discharging a plurality of processing gases into the processing chamber so as not to mix with each other; an exhaust means for exhausting the processing chamber; and A pair of electrodes to which a high-frequency power is applied to generate plasma and excite at least one of the processing gases, and a detecting means that is disposed outside the processing chamber and detects a light emission state of the plasma And a determination means for determining a plasma ignition error and an ignition delay based on a signal from the detection means.
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