JP2005333045A - Prober - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a prober capable of maintaining the probe and semiconductor circuit under the best contact pressure and measuring the electric characteristics of the target semiconductor circuit. <P>SOLUTION: This prober consists of a chuck 55 for placing the wafer 53 containing semiconductor circuitry on the upper surface 55a, and a tip 63a of the probe 63 contacting the semiconductor circuitry. In addition, it comprises a probe card 61 for measuring the electric characteristics of the semiconductor circuitry, a chuck controller 71 for controlling the position of the chuck 55, a timer 75 for time measurement, a variable data storage 77 for storing a travel distance per time interval of probe 63a to a measurement starting position in the position variation table 81, and a calculator 79 for referencing the position variation table 81 at time intervals to obtain a travel distance and obtaining the move position of the chuck 55. The chuck position controller 71 controls the position of the chuck 55 based on the move position. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a prober apparatus for measuring electrical characteristics of a semiconductor circuit formed on a wafer.

  In recent years, along with the high integration of semiconductor elements, a prober apparatus for measuring the electrical characteristics of a semiconductor circuit formed on a wafer has increased the number of probe needles and the number of parallel measuring points, As the pad pitch becomes narrower, the needle diameter becomes smaller and the allowable range of contact pressure between the needle tip and the semiconductor circuit tends to be narrowed, and high-precision control of the probe needle tip position has been required.

  Patent Document 1 discloses a prober device that automatically adjusts the position of the stage according to the temperature state of the stage on which the semiconductor substrate is mounted, and can keep the probe needle pressure constant. .

  FIG. 9 shows an example of a conventional prober device having the same configuration as the above document. A conventional prober apparatus 1 includes a chuck 5 for placing a wafer 3 on which a semiconductor circuit to be measured (not shown) is formed on an upper surface 5a thereof, and a chuck XY axis driving unit that moves the chuck 5 in the X axis and Y axis directions. 7, a chuck Z-axis drive unit 9 that moves the chuck 5 in the Z-axis direction, and a chuck position control unit 21 that controls the chuck XY-axis drive unit 7 and the chuck Z-axis drive unit 9. The chuck 5 includes a heater (not shown) that heats the chuck 5, a cooling unit (not shown) that cools the chuck 5, and a temperature sensor (not shown) that measures the temperature of the chuck 5.

  The conventional prober apparatus 1 includes a probe card 11 that is provided to face the upper surface 3 a of the wafer 3 and is used when measuring the electrical characteristics of the semiconductor circuit formed on the upper surface 3 a of the wafer 3. The probe card 11 has one surface 11 a provided with a probe needle 13 having a needle tip 13 a that contacts a semiconductor circuit, and is fixed by a fixed frame 15.

  Furthermore, the conventional prober device 1 includes a position sensor 23 that detects the position of the needle tip 13a of the probe needle 13 and a measurement start position of the needle tip 13a of the probe needle 13 based on the position data detected by the position sensor 23. The position measurement unit 25 that measures the position of the chuck 5, the temperature control unit 27 that controls the chuck 5 to the set temperature, the data that stores the set temperature of the chuck 5 and the movement position measured by the position measurement unit 25 in association with each other. A storage unit 29 and a CPU 31 are included.

  By the way, in the conventional prober apparatus 1, when the electrical characteristics of the semiconductor circuit of the wafer 3 are measured at a high temperature or low temperature, the probe card 11 is distorted by the heat conduction or radiant heat from the wafer 3 or the probe of the probe card 11. The needle 13 expands and contracts. For example, as shown in FIG. 10, when the temperature of the chuck 5 is high, the distance from the tip 13a of the probe needle 13 to the upper surface of the wafer 3 is from the distance a at the start of measurement (indicated by a broken line in the figure). At a distance b, the probe tip 13a of the probe needle 13 moves downward in the Z-axis direction by a distance c. FIG. 11 is a diagram showing a change with time of the position d of the needle tip 13a with reference to the position of the probe tip 13 at the start of measurement of the needle tip 13a. The position d of the probe tip 13a of the probe needle 13 is moved downward in the Z-axis direction from the position at the start of measurement, and the fluctuation range converges within a predetermined range and stabilizes after a certain period of time. Thereafter, when the needle tip 13a of the probe needle 13 is separated from the wafer 3, the position d of the needle tip 13a of the probe needle 13 moves upward in the Z-axis direction.

  The conventional prober apparatus 1 of FIG. 9 is configured to automatically adjust the position of the chuck 5 in accordance with the temperature change of the chuck 5 on which the wafer 3 on which the semiconductor circuit to be measured is formed is mounted. The conventional prober device 1 measures the position of the probe tip 13 a of the probe needle 13 in advance for each temperature of the chuck 5 and stores it in the data storage unit 29. When measuring the electrical characteristics of the semiconductor circuit, the temperature of the chuck 5 is measured, the position of the probe tip 13a of the probe needle 13 is obtained from the data storage unit 29 according to the temperature of the chuck 5, and the probe tip of the probe needle 13 is acquired. The movement position of the chuck 5 is calculated from the position 13a. Based on the calculated movement position, the chuck position control unit 21 controls the chuck Y-axis drive unit 9 to move the chuck 5 to the movement position.

In this way, the conventional prober device 1 can control the position of the chuck 5 according to the temperature of the chuck 5.
JP-A-1-270243

  However, the prior art described in the above literature has room for improvement in the following points.

  The conventional prober apparatus 1 has the following problems when a countermeasure is not taken when a wafer is exchanged or measurement is stopped by an alarm. For example, if the probe needle 13 and the wafer 3 are not in contact with each other when the measurement is stopped at the time of wafer replacement or an alarm during measurement of electrical characteristics of a semiconductor circuit at a high temperature, the temperature of the probe card 11 and the probe needle 13 is changed. Decreases, and the position of the probe tip 13a of the probe 13 returns to the normal temperature position. In the conventional prober device 1, the position of the probe tip 13 a of the probe needle 13 is not corrected when the measurement is resumed. Therefore, the contact pressure between the probe tip 13 a of the probe needle 13 and the wafer 3 is lowered, and the measurement is accurate due to poor contact. There was a possibility not to be done.

  Further, in the conventional prober apparatus 1, as a countermeasure method when the wafer is exchanged or measurement is stopped by an alarm, a method of correcting the position of the probe tip 13a of the probe needle 13 when the measurement is resumed can be considered. For example, when the measurement is resumed, a waiting time of a certain time is provided in a high or low temperature state, waits until the position of the needle tip 13a of the probe needle 13 is stabilized, the position of the needle tip 13a is measured, the chuck 5 is moved, and the needle The contact pressure between the tip 13a and the wafer 3 can be adjusted. However, in this case, there is a problem that a waiting time is required, which causes a decrease in the operation rate of the prober device 1.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a prober device capable of measuring the electrical characteristics of a semiconductor circuit to be measured while keeping the probe and the semiconductor circuit in an optimum contact pressure state. It is to provide. Another object of the present invention is to improve the reliability of the prober apparatus. Another object of the present invention is to improve the operation rate of the prober apparatus.

  According to the present invention, a stage for placing a wafer having one surface on which a semiconductor circuit is formed on the upper surface thereof, a probe having a needle tip that contacts the semiconductor circuit, and measuring the electrical characteristics of the semiconductor circuit; A position control unit for controlling the position of the stage or the probe, a time measuring unit for measuring time, and a movement distance of the probe with respect to the measurement start position of the probe for each predetermined time interval is stored in a position variation table. A storage unit, a calculation unit that refers to the position variation table for each time interval, obtains the moving distance, and calculates the moving position of the stage and the probe; and the position control unit includes the A prober apparatus is provided, wherein the position of the stage or the probe is controlled based on a moving position.

  According to the present invention, the prober device predetermines the change over time of the movement distance with respect to the measurement start position of the probe tip as a measurement operation pattern, stores it in the table, and obtains the probe obtained by referring to the table for each time interval. Since the movement position of the stage and the probe can be calculated and controlled in real time from the movement distance of the probe tip relative to the measurement start position, the probe and the semiconductor circuit can be controlled while maintaining the optimum contact pressure state. Electrical characteristics can be measured. Thereby, it is possible to prevent erroneous measurement due to poor contact in the prober device, improve the quality of the semiconductor circuit, and improve the reliability of the prober device.

  Further, since the waiting time when the measurement is resumed after the measurement is interrupted is reduced as compared with the case where the position of the probe is controlled according to the wafer temperature, the operation rate of the prober apparatus is improved.

  According to the present invention, there is provided a stage for placing a wafer having one surface on which a semiconductor circuit is formed on the upper surface thereof, and a needle tip in contact with the semiconductor circuit, and measuring electrical characteristics of the semiconductor circuit. A probe, a distance measuring unit that measures a movement distance of the probe from the measurement start position of the probe tip, a position control unit that controls the position of the stage or the probe, a time measuring unit that measures time, and the probe A detection unit that detects a contact state indicating whether the needle tip and the semiconductor circuit are in contact or non-contact, and a change that measures the moving distance measured by the distance measurement unit at predetermined time intervals A quantity measuring unit, a storage unit for storing a position variation table in which the contact state detected by the detecting unit and the moving distance for each time interval are recorded in association with each other, and detected by the detecting unit A calculation unit that obtains the moving distance and calculates the moving position of the stage and the probe by referring to the position variation table for each time interval according to the contact state. A prober device is provided, wherein the control unit controls the position of the stage or the probe based on the moving position.

  According to this invention, the prober contacts the semiconductor circuit on the wafer and the probe tip of the probe (contacting and measuring, or non-contacting and stopping the measurement), and measuring the probe tip of the probe at predetermined time intervals. The movement distance with respect to the start position can be recorded in the position fluctuation table, and the movement position of the stage and the probe can be calculated and controlled in real time from the movement distance obtained by referring to the position fluctuation table. It is possible to measure the electrical characteristics of the semiconductor circuit to be measured while keeping the semiconductor circuit in an optimum contact pressure state. Thereby, it is possible to prevent erroneous measurement due to poor contact in the prober device, improve the quality of the semiconductor circuit, and improve the reliability of the prober device.

  Further, since the waiting time when the measurement is resumed after the measurement is interrupted is reduced as compared with the case where the position of the probe is controlled according to the wafer temperature, the operation rate of the prober apparatus is improved.

  The prober apparatus includes a temperature control unit that controls the wafer to a predetermined set temperature, the storage unit stores a plurality of the position variation tables for a plurality of set temperatures, and the calculation unit includes the set temperature. The corresponding position variation table can be used according to the above.

  According to this configuration, it is possible to provide a position variation table for each set temperature, and it is possible to cope with measurement of electrical characteristics of various semiconductor substrates, and convenience is increased.

  In the prober apparatus, a first recording unit that contacts the probe tip of the probe with the semiconductor circuit and records the movement distance for each time interval in a first position variation table; and a fluctuation range of the movement distance A determination unit for determining whether or not the fluctuation width has become less than a predetermined value, and when it is determined that the fluctuation range has become less than a predetermined value, the probe tip of the probe is separated from the semiconductor circuit, A second recording unit that records the movement distance in a second position variation table, and a correction unit that corrects the time of the time measuring unit, and when measuring the electrical characteristics of the semiconductor circuit, The time measuring unit measures a first elapsed time after the probe tip of the probe is brought into contact with the semiconductor circuit, and the calculating unit is configured to perform the time interval according to the first elapsed time. The first position of the storage unit The movement position is calculated from the movement distance obtained by referring to the movement table, and the position control unit controls the position at each time interval based on the movement position, and interrupts the measurement of the semiconductor circuit. When resuming later, the timing unit measures a second elapsed time from when the probe tip of the probe is released from the semiconductor circuit until it comes into contact again, and the calculation unit calculates the second elapsed time. Accordingly, the movement position is calculated from the movement distance obtained by referring to the second position variation table, and the position control unit controls the position based on the movement position, and the semiconductor circuit After the measurement is resumed, the correction unit corrects the first elapsed time of the time measuring unit to an elapsed time acquired by referring to the first position variation table from the movement distance, and the calculation unit includes the first In response to the passage of time 1 The movement position is calculated from the movement distance obtained by referring to the position variation table of the storage unit at each time interval, and the position control unit determines the position based on the movement position as the time. It can be controlled at intervals.

  Here, the first position variation table records changes over time in the probe tip position when the probe tip contacts the semiconductor circuit, that is, the measurement, and the second position variation table records the probe tip. The change with time of the needle tip position when the distance from the semiconductor circuit, that is, when the measurement is interrupted is recorded.

  According to this configuration, since the position variation table is provided for each contact state between the semiconductor circuit and the probe tip, even when the measurement is resumed, the probe tip travel distance can be obtained quickly, and the subsequent travel distance is also Since it can be acquired in real time, the operation rate of the prober device is improved.

  In the prober device, when the detection unit detects that the contact state is non-contact, a time determination unit that determines whether or not the non-contact time measured by the time measuring unit is within a predetermined time; and When the non-contact time is determined to be within a predetermined time by the time determination unit, the contact state is determined to be contact, and the non-contact time exceeds the predetermined time by the time determination unit. A determination unit that determines that the contact state is non-contact.

  According to this configuration, while the probe moves between the plurality of semiconductor circuits provided on the wafer, the position of the probe tip of the probe due to temperature change is small, so it is determined that the measurement is being performed, and the first position The position can be controlled according to the variation table.

  According to the present invention, there is provided a prober device capable of measuring the electrical characteristics of a semiconductor circuit to be measured while keeping the probe and the semiconductor circuit in an optimum contact pressure state.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, similar constituent elements are denoted by the same reference numerals, and description thereof will be omitted as appropriate.
(First embodiment)

  FIG. 1 is a configuration diagram schematically showing a prober apparatus according to an embodiment of the present invention. The prober device 50 includes a chuck 55 for placing a wafer 53 on which a semiconductor circuit (not shown) is formed on an upper surface 55a thereof, a chuck XY-axis drive unit 57 for moving the chuck 55 in the X-axis and Y-axis directions, and a chuck A chuck Z-axis drive unit 59 that moves 55 in the Z-axis direction, and a chuck position control unit 71 that controls the chuck XY-axis drive unit 57 and the chuck Z-axis drive unit 59 are provided.

  The chuck 55 includes a heater (not shown) that heats the chuck 55, a cooling unit (not shown) that cools the chuck 55, and a temperature sensor (not shown) that measures the temperature of the chuck 55.

  The chuck XY axis drive unit 57 and the chuck Z axis drive unit 59 drive the chuck 55 by a drive motor (not shown). The chuck position control unit 71 controls the position of the chuck 55 by controlling the rotation of the drive motors of the chuck XY axis drive unit 57 and the chuck Z axis drive unit 59.

  Measurement of electrical characteristics of a plurality of semiconductor circuits formed on the upper surface 53a of the wafer 53 is performed for each semiconductor circuit. Therefore, the chuck position control unit 71 controls the chuck XY axis driving unit 57 to move the chuck 55 in the XY axis direction so that each semiconductor circuit and the needle tip 63a of the probe needle 63 face each other at an appropriate position. . Further, when measuring the electrical characteristics of the semiconductor circuit, the chuck position control unit 71 controls the chuck Z-axis drive unit 59 so that the semiconductor circuit and the needle tip 63a of the probe needle 63 come into contact with each other at an optimum contact pressure. The chuck 55 is moved in the Z-axis direction so as to be connected.

  The prober device 50 is provided so as to face the upper surface 53 a of the wafer 53, and includes a probe card 61 that is used when measuring electrical characteristics of a semiconductor circuit formed on the upper surface 53 a of the wafer 53. The probe card 61 has one surface 61a on which a probe needle 63 having a needle tip 63a that contacts the semiconductor circuit is provided. Further, the prober device 50 includes a fixed frame 65 that fixes the probe card 61 and an electrical characteristic measuring unit 67 that measures electrical characteristics of the semiconductor circuit via the probe card 61.

  Further, the prober device 50 includes a temperature control unit 73, a timer unit 75, a fluctuation data storage unit 77, and a calculation unit 79.

  The temperature control unit 73 includes a temperature sensor (not shown), measures the temperature of the chuck 55 with the temperature sensor, and controls the chuck 55 to a predetermined set temperature. When the temperature of the chuck 55 is increased, the temperature control unit 73 controls the heater so that the chuck 55 is heated by the heater. When the temperature of the chuck 55 is decreased, the temperature control unit 73 controls the cooling unit so that the chuck 55 is cooled by the cooling unit. Control.

  The timer unit 75 measures time. When measuring the electrical characteristics of the semiconductor circuit, the timer unit 75 measures a predetermined time interval from the start of measurement and notifies the calculation unit 79 of it. The fluctuation data storage unit 77 stores a position fluctuation table 81 in which the movement distance of the probe needle 63 with respect to the measurement start position of the needle tip 63a is recorded at predetermined time intervals. Details of the position variation table 81 will be described later.

  The calculation unit 79 refers to the position variation table 81 at every predetermined time interval notified from the timer unit 75, acquires the movement distance of the probe tip 63a of the probe needle 63, and determines the probe based on the acquired movement distance. The movement position of the chuck 55 in the Z-axis direction is calculated so that the needle tip 63a of the needle 63 and the semiconductor circuit come into contact with each other with an optimum contact pressure. The movement position calculated by the calculation unit 79 is notified to the chuck position control unit 71. The chuck position control unit 71 controls the chuck Z-axis drive unit 59 to move the chuck 55 to the movement position in the Z-axis direction.

  In the present embodiment, the prober device 50 performs measurement in advance with a measurement operation pattern as shown in FIG. 2, and changes the position d indicating the movement distance of the probe needle 63 with respect to the measurement start position of the probe tip 63 over time. A measurement operation pattern is determined and stored in the position variation table. That is, after measurement is started at time T0, measurement of the first wafer 53 is completed at time T1, and measurement of the second wafer 53 is resumed at time T2. Further, measurement of the second wafer 53 is completed at time T3, and measurement of the third wafer 53 is resumed at time T4. It is assumed that times T0, T1, T2, T3, and T4 are predetermined as measurement operation patterns.

  In the example of FIG. 2, the prober device 50 measures the electrical characteristics of the semiconductor circuit at a high temperature. After the measurement starts at time T0, when the probe tip 63a of the probe needle 63 contacts the semiconductor circuit of the wafer 53, the temperature d of the probe tip 63a moves downward in the Z-axis direction with respect to the measurement start position due to the temperature of the wafer 53. To do. After a certain period of time, the fluctuation range of the position d falls within a predetermined range and becomes stable.

  Thereafter, the wafer 53 is replaced in order to measure the electrical characteristics of the semiconductor circuit of another wafer 53. When the probe needle 63 is moved away from the wafer 53 to replace the wafer 53 at time T1, the temperature of the needle tip 63a of the probe needle 63 decreases, so that the position d of the needle tip 63a is set to the measurement start position. Move upward in the Z-axis direction.

  Again, at time T2, when the probe tip 63a of the probe needle 63 is brought into contact with the semiconductor circuit of the wafer 53 in order to start measurement, the position d of the needle tip 63a is changed from the measurement start position to the Z axis by the temperature of the wafer 53. Move downward in the direction. After a certain period of time, the position change width falls within a predetermined range and becomes stable.

  FIG. 3 shows an example of the position variation table 81. The position variation table 81 stores the position of the needle tip 63a of the probe needle 63 in association with each other at predetermined time intervals.

  FIG. 4 is a flowchart showing the operation of the prober device 50 of the present embodiment.

  First, when the wafer 53 is placed on the chuck 55 and the tip 63a of the probe needle 63 contacts the semiconductor circuit of the wafer 53 and measurement is started, the timer unit 75 starts measuring elapsed time (S11). ). Subsequently, the calculation unit 79 refers to the position variation table 81 at every predetermined time interval measured by the timer unit 75 and acquires the position d of the probe tip 63a of the probe needle 63 (S13). Subsequently, the calculation unit 79 calculates the movement position of the chuck 55 in the Z-axis direction based on the acquired position d so that the needle tip 63a of the probe needle 63 and the semiconductor circuit are in contact with each other at an optimal contact pressure ( S15).

  Subsequently, the chuck position control unit 71 controls the chuck Z-axis drive unit 59 to move the chuck 55 to the movement position in the Z-axis direction, so that the needle tip 63a of the probe needle 63 and the semiconductor circuit are connected at an optimum contact pressure. Contact (S17). Subsequently, the electrical characteristic measuring unit 67 measures the electrical characteristics of the semiconductor circuit (S19). Subsequently, when the measurement of the electrical characteristics of the semiconductor circuit is to be ended (YES in S21), this process is ended as it is. On the other hand, when the measurement is continued (NO in S21), the process returns to step S13.

  As described above, according to the prober device 50 of the present embodiment, the position d indicating the movement distance of the probe tip 63a of the probe needle 63 based on the position variation table 81 that defines a predetermined measurement operation pattern. And the position of the chuck 55 in the Z-axis direction can be controlled in real time. As a result, the electrical characteristics of the semiconductor circuit to be measured can be measured while maintaining the probe and the semiconductor circuit at the optimum contact pressure state.

As described above, according to the prober device 50 of the present embodiment, it is possible to prevent erroneous measurement due to poor contact between the probe needle 63 and the semiconductor circuit, and the quality of the semiconductor circuit is improved. Reliability is also improved. Further, according to the prober device 50 of the present embodiment, the waiting time for restarting the measurement after the measurement is interrupted is reduced as compared with the case where the position of the probe is controlled according to the temperature of the wafer. The utilization rate of 50 is improved.
(Second embodiment)

  FIG. 5 is a configuration diagram schematically showing a prober apparatus according to an embodiment of the present invention. The prober device 90 of this embodiment is different from the above embodiment in that it has a configuration in which a position variation table is recorded by actually measuring the probe tip position.

  The prober device 90 includes a variation data storage unit 101 and a calculation unit 105 instead of the variation data storage unit 77 and the calculation unit 79 of the prober device 50 of FIG. The prober device 90 further includes a position sensor 91, a position measurement unit 93, a detection unit 95, a change amount determination unit 97, a recording unit 103, and a correction unit 107.

  The position sensor 91 detects the position of the probe tip 63 a of the probe needle 63. The position sensor 91 is, for example, a camera or a laser sensor.

  Based on the position data detected by the position sensor 91, the position measurement unit 93 measures a position d indicating the movement distance of the probe needle 63 with respect to the measurement start position of the probe needle 63 at predetermined time intervals.

  The detection unit 95 detects whether the needle tip 63a of the probe needle 63 is in contact with the semiconductor circuit. Specifically, based on the position data of the needle tip 63a of the probe needle 63 detected by the position sensor 91 by the position measuring unit 93, it is detected whether or not the needle tip 63a of the probe needle 63 is in contact with the semiconductor circuit. To do. Alternatively, the electrical characteristic measuring unit 67 can also detect by determining whether or not the needle tip 63a of the probe needle 63 and the semiconductor circuit are electrically connected.

  Based on the position d measured by the position measurement unit 93, the change amount determination unit 97 determines whether or not the fluctuation range of the position d at a predetermined time interval exceeds a predetermined value.

  The fluctuation data storage unit 101 includes a first position fluctuation table 111 and a second position fluctuation table 112. The recording unit 103 records the results measured by the position measuring unit 93 in the first position variation table 111 and the second position variation table 112. Specifically, the recording unit 103 contacts the first position variation table 111 when the semiconductor circuit of the wafer 53 placed on the chuck 55 controlled to the set temperature and the probe tip 63a of the probe needle 63 contact each other. The position d of the probe tip 63a of the probe needle 63 measured by the position measuring unit 93 at a predetermined time interval is recorded. Further, the recording unit 103 stores the probe needle 63 in the second position variation table 112 at a predetermined time interval measured by the position measuring unit 93 from the time when the needle tip 63a of the probe needle 63 being measured is separated from the wafer 53. Record the position d of the needle tip 63a. Here, in the present embodiment, the set temperature of the chuck 55 is set to a high temperature setting.

  In the present embodiment, the timer unit 75 measures the first elapsed time after bringing the needle tip 63a of the probe needle 63 into contact with the semiconductor circuit, and separates the needle tip 63a of the probe needle 63 from the semiconductor circuit. The second elapsed time until contact is made again.

  During the measurement of the electrical characteristics of the semiconductor circuit, the calculation unit 105 refers to the first position variation table 111 of the variation data storage unit 101 at predetermined time intervals according to the first elapsed time, and The position d of the needle tip 63a of the needle 63 is acquired, and the movement position of the chuck 55 in the Z-axis direction is calculated so that the needle tip 63a of the probe needle 63 and the semiconductor circuit come into contact with each other with an optimum contact pressure. In addition, when the measurement unit restarts the measurement after stopping the measurement of the electrical characteristics of the semiconductor circuit, the calculation unit 105 stores the second position variation table 112 of the variation data storage unit 101 according to the second elapsed time. The position d of the needle tip 63a of the probe needle 63 is obtained by referring to the above. Based on the acquired position d, the movement position of the chuck 55 in the Z-axis direction is calculated so that the needle tip 63a of the probe needle 63 and the semiconductor circuit come into contact with each other at the optimum contact pressure when the measurement is resumed.

  The correction unit 107 corrects the first elapsed time of the timer unit 75 when the measurement is resumed after interrupting the measurement of the electrical characteristics of the semiconductor circuit. The correction unit 107 refers to the first position variation table 111 based on the position d of the probe tip 63a of the probe needle 63 acquired from the second position variation table 112 when the measurement is resumed, and acquires the corresponding measurement resume time. Then, the first elapsed time measured by the timer unit 75 is corrected.

  FIG. 6 is a flowchart showing an operation at the time of recording of the position variation table of the prober apparatus 90 of the present embodiment.

  First, the wafer 53 is placed on the chuck 55 whose temperature is controlled to normal temperature by the temperature control unit 73, and the chuck position control unit 71 controls the chuck Z-axis drive unit 59 to control the needle tip 63 a of the probe needle 63. Is brought into contact with the semiconductor circuit of the wafer 53. Then, the position measuring unit 93 measures the position of the needle tip 63a of the probe needle 63 via the position sensor 91 (S31). The position measured here becomes the start position of the probe tip 63a of the probe needle 63 at the start of measurement, and the change in the position of the probe tip 63a of the probe needle 63 due to the temperature change thereafter is the movement distance from this start position. Will be shown. Here, the chuck position control unit 71 controls the chuck Z-axis drive unit 59 to once separate the needle tip 63 a of the probe needle 63 from the wafer 53.

  Subsequently, the temperature control unit 73 controls the temperature of the chuck 55 (S33). Here, since measurement is performed at a high temperature, the chuck 55 is heated by an internal heater, and the wafer 53 on the chuck 55 is also heated. Subsequently, the temperature control unit 73 determines whether or not the temperature of the chuck 55 is the set temperature (S35). If the temperature is not the set temperature (NO in S35), the process returns to step S33. When the temperature of the chuck 55 is the set temperature (YES in S35), the chuck position control unit 71 again controls the chuck Z-axis drive unit 59 so that the probe tip 63a of the probe needle 63 becomes a semiconductor circuit of the wafer 53. Contact (S37). In addition, the temperature determination of step S35 shall be determined by whether it is in the range of a predetermined temperature fluctuation range. Subsequently, for each time interval measured by the timer unit 75, the position measuring unit 93 measures the position of the probe tip 63a of the probe needle 63 (S39). Subsequently, the change amount determination unit 97 determines whether or not the measured fluctuation range of the position exceeds a predetermined value (S41).

  When the position variation width exceeds the predetermined value (YES in S41), the recording unit 103 records the measured position in the first position variation table 111 and stores it in the variation data storage unit 101 (S43). . Subsequently, the chuck position control unit 71 controls the chuck Z-axis driving unit 59 to change the position so that the needle tip 63a of the probe needle 63 contacts the semiconductor circuit of the wafer 53 with the optimum contact pressure. Only the chuck 55 is moved in the Z-axis direction (S45). Thereafter, the process returns to step S39. Thereafter, the operations from step S41 to step S45 are repeated until the fluctuation range of the position exceeds a predetermined value. Thereby, the change with time of the position of the probe tip 63 a of the probe needle 63 from the start of measurement is recorded in the first position variation table 111.

  On the other hand, when the fluctuation range of the position is less than the predetermined value (NO in S41), that is, when the position of the probe tip 63a of the probe needle 63 is stabilized, the chuck position control unit 71 controls the chuck Z-axis drive unit 59. Then, the probe tip 63a of the probe needle 63 is separated from the semiconductor circuit of the wafer 53 (S47). Subsequently, for each time interval measured by the timer unit 75, the position measuring unit 93 measures the position of the needle tip 63a of the probe needle 63 (S49). The recording unit 103 records the measured position in the second position variation table 112 and stores it in the variation data storage unit 101 (S51). Subsequently, the chuck position control unit 71 controls the chuck Z-axis driving unit 59 to change the position so that the needle tip 63a of the probe needle 63 contacts the semiconductor circuit of the wafer 53 with the optimum contact pressure. Only the chuck 55 is moved in the Z-axis direction (S53).

  Subsequently, the change amount determination unit 97 determines whether or not the measured fluctuation range of the position exceeds a predetermined value (S55). If the fluctuation range of the position exceeds the predetermined value (YES in S55), the process returns to step S49. Thereafter, the operations from step S49 to step S53 are repeated until the fluctuation range of the position falls below a predetermined value. As a result, the time-dependent change in the position of the probe tip 63a of the probe needle 63 when the probe tip 63a of the probe needle 63 moves away from the wafer 53 after the measurement of the electrical characteristics of the semiconductor circuit is stored in the second position variation table 112. To be recorded. On the other hand, when the position fluctuation width is less than the predetermined value (NO in S55), that is, when the position of the needle tip 63a of the probe needle 63 is stabilized, this processing is terminated.

  As described above, the first position variation table 111 and the second position variation table 112 are obtained. The first position variation table 111 records changes over time in the position of the probe tip 63a of the probe needle 63 after the start of measurement, and the second position variation table 112 records the needle tip 63a of the probe needle 63 after measurement. Is recorded with time as the position of the wafer 53 moves away from the wafer 53.

  FIG. 7 is a flowchart showing the operation at the time of measuring the electrical characteristics of the semiconductor circuit of the prober device 90 of the present embodiment.

  First, the detection unit 95 determines whether or not the electrical characteristics of the semiconductor circuit are being measured (S61). Here, the detection unit 95 determines whether the probe tip 63a of the probe needle 63 is in contact with the semiconductor circuit based on the position of the probe tip 63a of the probe needle 63 measured by the position measurement unit 93 via the position sensor 91. Determine. Alternatively, the electrical characteristic measurement unit 67 detects electrical connection with the semiconductor circuit via the probe tip 63a of the probe needle 63, and based on the result, determines whether the detection unit 95 is in contact. You may judge. When it is determined that they are in contact, the detection unit 95 determines that measurement is being performed. On the other hand, when it is determined as non-contact, the non-contact time is measured, and it is determined whether or not the non-contact time during which no contact has occurred for a predetermined time interval or more has continued. When the non-contact time is equal to or longer than the predetermined time interval, the detection unit 95 determines that the measurement is not being performed. When the non-contact time is within a predetermined time interval, the detection unit 95 determines that measurement is being performed.

  The reason for making such a determination is shown below. When measuring the electrical characteristics of a plurality of semiconductor circuits formed on one wafer 53, it is necessary to move the needle tip 63a of the probe needle 63 between the semiconductor circuits. While the needle tip 63a is moved, the needle tip 63a of the probe needle 63 is once separated from the semiconductor circuit. When the non-contact time is within a predetermined time interval, the position of the needle tip 63a of the probe needle 63 by non-contact is determined. It is considered that there is little change in and that the contact pressure between the semiconductor circuit and the probe tip 63a of the probe needle 63 is not affected. Accordingly, a non-contact time is determined by setting a time interval in which a change in the position of the probe tip 63a of the probe needle 63 due to non-contact does not affect the contact pressure between the semiconductor circuit and the probe tip 63a of the probe needle 63.

  Subsequently, the timer unit 75 measures the first elapsed time (S63), and notifies the calculation unit 105 at every predetermined time interval. In response to the notification from the timer unit 75, the calculation unit 105 refers to the first position variation table 111 of the variation data storage unit 101 and acquires the position d of the probe tip 63a of the probe needle 63 (S65). Subsequently, the calculating unit 105 calculates the movement position of the chuck 55 in the Z-axis direction so that the needle tip 63a of the probe needle 63 and the semiconductor circuit come into contact with each other at an optimal contact pressure (S67).

  Subsequently, the chuck position control unit 71 controls the chuck Z-axis drive unit 59 to move the chuck 55 to the movement position in the Z-axis direction, so that the needle tip 63a of the probe needle 63 and the semiconductor circuit come into contact with each other at an optimal contact pressure. (S69). Subsequently, the electrical characteristic measuring unit 67 measures the electrical characteristics of the semiconductor circuit (S71). When the measurement of the electrical characteristics of the semiconductor circuit is finished (YES in S73), this process is finished as it is. When the measurement is continued (NO in S73), the process returns to step S61.

  On the other hand, if it is determined in step S61 that no measurement is being performed (NO in S61), the timer unit 75 starts measuring the second elapsed time (S75). Subsequently, the detection unit 95 determines whether or not measurement is started (S77). Here, the position measuring unit 93 measures whether or not the probe tip 63a of the probe needle 63 is in contact with the semiconductor circuit based on the position of the probe tip 63a of the probe needle 63 detected by the position sensor 91. If it is in contact, it is determined that measurement has started. The determination of the start of measurement can also be made by detecting the electrical connection between the probe tip 63a of the probe needle 63 and the semiconductor circuit by the electrical characteristic measuring unit 67.

  When it is determined that the measurement is started (YES in S77), the calculation unit 105 refers to the second position variation table 112 of the variation data storage unit 101 based on the second elapsed time measured by the timer unit 75. Then, the position d of the probe tip 63a of the probe needle 63 corresponding to the second elapsed time is acquired (S79). Subsequently, the calculation unit 105 calculates the movement position of the chuck 55 based on the position d (S81). Subsequently, the chuck position control unit 71 controls the chuck Z-axis drive unit 59 to move the chuck 55 to the movement position in the Z-axis direction, so that the needle tip 63a of the probe needle 63 and the semiconductor circuit come into contact with each other at an optimal contact pressure. (S83). Subsequently, the correction unit 107 corrects the time of the timer unit 75 (S85). Based on the position d of the probe tip 63a of the probe needle 63 acquired in step S79, the first position variation table 111 is referred to, the corresponding measurement resumption time is acquired, and the first time measured by the timer unit 75 is measured. Correct the elapsed time. In step S71, the electrical characteristic measurement unit 67 measures the electrical characteristics of the semiconductor circuit.

  On the other hand, when it is determined that the measurement is not started (NO in S77), the process returns to step S75.

  In the prober device 90 of the present embodiment configured as described above, the case where the measurement of the electrical characteristics of the semiconductor circuit is performed in the process as shown in FIG. 8 will be described. In the following description, FIG. 5 and FIG. 7 are also used.

  When the measurement is started at time T0, when the probe tip 63a of the probe needle 63 comes into contact with the semiconductor circuit of the wafer 53, the position d of the probe tip 63a is lowered below the measurement start position in the Z-axis direction due to the temperature of the wafer 53. Start moving towards. The fluctuation range of the position d is recorded in the first position fluctuation table 111 of the fluctuation data storage unit 101. Therefore, in the prober device 90, at every predetermined time interval timed by the timer unit 75, the calculation unit 105 refers to the first position variation table 111, and the probe tip of the probe needle 63 corresponding to the first elapsed time. The position d of 63a is acquired. Further, the calculation unit 105 calculates the movement position of the chuck 55 based on the position d. The chuck position control unit 71 controls the chuck Z-axis drive unit 59 to move the chuck 55 to the movement position in the Z-axis direction so that the needle tip 63a of the probe needle 63 and the semiconductor circuit are brought into contact with each other with an optimal contact pressure. In this state, the electrical characteristic measuring unit 67 measures the electrical characteristics of the semiconductor circuit. In this way, the prober device 90 acquires the position of the probe tip 63a of the probe needle 63 that fluctuates at the start of measurement from the first position variation table 111, and controls the position of the chuck 55 in the Z-axis direction in real time. Therefore, it is possible to measure the electrical characteristics of the semiconductor circuit to be measured while keeping the probe and the semiconductor circuit in an optimal contact pressure state.

  Thereafter, at time T1, the measurement of the first wafer 53 is completed, and the wafer 53 is replaced. When the probe needle 63 is moved away from the wafer 53 for replacement of the wafer 53 at time T1, the temperature of the probe tip 63a of the probe needle 63 decreases, so that the position d of the probe tip 63a of the probe needle 63 starts measurement. Move upward in the Z-axis direction relative to the position. The change of the position d is stored in the second position variation table 112 of the variation data storage unit 101.

  The prober device 90 uses the timer unit 75 to measure the non-measurement time from the time T1 to the time T2 as the second elapsed time. When the measurement of the electrical characteristics of the semiconductor circuit is started at time T2, the calculation unit 105 refers to the second position variation table 112 and determines the needle tip 63a of the probe needle 63 corresponding to the second elapsed time. The position D2 is acquired. The calculation unit 105 calculates the movement position of the chuck 55 based on the acquired position D2. The chuck position control unit 71 controls the chuck Z-axis drive unit 59 to move the chuck 55 to the movement position in the Z-axis direction so that the needle tip 63a of the probe needle 63 and the semiconductor circuit are brought into contact with each other with an optimal contact pressure. In this state, the electrical characteristic measuring unit 67 measures the electrical characteristics of the semiconductor circuit.

  Thereafter, the correction unit 107 refers to the first position variation table 111 based on the position D2 of the probe tip 63a of the probe needle 63 when the measurement is resumed, acquires the corresponding measurement resumption time, and the timer unit 75. The first elapsed time being counted by is corrected. Based on the corrected first elapsed time, the calculation unit 105 refers to the first position variation table 111, acquires the position d of the probe tip 63a of the probe needle 63 at predetermined time intervals, and Similar processing is repeated.

  In this manner, the prober device 90 acquires the position of the probe tip 63a of the probe needle 63 by the second position variation table 112 when the measurement is resumed after the measurement is interrupted by wafer exchange or the like, and the Z axis of the chuck 55 Since the position in the direction can be controlled, the measurement of the electrical characteristics of the semiconductor circuit to be measured can be resumed while keeping the probe and the semiconductor circuit in an optimum contact pressure state.

  Furthermore, when the measurement of the electrical characteristics of the semiconductor circuit is temporarily interrupted at time T3 due to a malfunction or the like, the prober device 90 causes the timer unit 75 to set the non-measurement time from time T3 to time T4 to the second time. Time is measured as elapsed time. When the measurement of the electrical characteristics of the semiconductor circuit is started at time T4, the calculation unit 105 refers to the second position variation table 112 and determines the needle tip 63a of the probe needle 63 corresponding to the second elapsed time. The position D4 is acquired. Since the position of the chuck 55 in the Z-axis direction can be controlled in the same manner as described above, the measurement of the electrical characteristics of the semiconductor circuit to be measured can be resumed while maintaining the probe and the semiconductor circuit at the optimum contact pressure state. it can.

  Further, since the waiting time when the measurement is resumed after the measurement is interrupted is reduced as compared with the case where the position of the probe is controlled according to the wafer temperature, the operation rate of the prober apparatus is improved.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

  For example, in the above embodiment, the probe needle 63 is fixed and the chuck 55 is moved in the vertical direction. However, the present invention is not limited to this. The vertical position of the chuck 55 may be fixed, and the probe needle 63 may be moved in the vertical direction. Alternatively, both the chuck 55 and the probe needle 63 may be movable. That is, the prober device can include a position control unit that controls the relative position of the chuck 55 and the probe needle 63.

  In the above embodiment, the set temperature of the chuck 55 is set to a high temperature setting, and the position variation table is stored only for the preset set temperature. However, the present invention is not limited to this. For example, in the prober device, the fluctuation data storage unit may store a plurality of position fluctuation tables for a plurality of set temperatures. The calculation unit can select and use the corresponding position variation table in accordance with the set temperature at the time of actual measurement.

  According to this configuration, it is possible to provide a position variation table for each set temperature, and it is possible to cope with measurement of electrical characteristics of various semiconductor substrates, and convenience is increased.

It is the block diagram which showed typically the prober apparatus which concerns on embodiment of this invention. It is a figure which shows the measurement operation | movement pattern of the prober apparatus of FIG. It is a figure which shows an example of the position variation table of the prober apparatus of FIG. It is a flowchart which shows operation | movement of the prober apparatus of FIG. It is a block diagram which shows typically the prober apparatus which concerns on embodiment of this invention. It is a flowchart which shows the operation | movement at the time of recording of the position variation table of the prober apparatus of FIG. 6 is a flowchart showing an operation at the time of measuring electrical characteristics of a semiconductor circuit of the prober apparatus of FIG. 5. It is a figure for demonstrating the fluctuation | variation of the position of the probe tip of a probe needle in the case of measuring using the prober apparatus of FIG. It is a block diagram which shows the conventional prober apparatus typically. It is a figure for demonstrating the fluctuation | variation of the position of the probe tip of the probe needle at the time of high temperature measurement of a prober apparatus. It is a figure for demonstrating the fluctuation | variation of the probe tip of the probe needle at the time of the high temperature measurement of a prober apparatus.

Explanation of symbols

50 Prober Device 53 Wafer 55 Chuck 57 Chuck XY Axis Drive Unit 59 Chuck Z Axis Drive Unit 61 Probe Card 63 Probe Needle 65 Fixed Frame 67 Electrical Characteristic Measurement Unit 71 Chuck Position Control Unit 73 Temperature Control Unit 75 Timer Unit 77 Fluctuation Data Storage Unit 79 calculation unit 81 position variation table 90 prober device 91 position sensor 93 position measurement unit 95 detection unit 97 change amount determination unit 101 variation data storage unit 103 recording unit 105 calculation unit 107 correction unit 111 first position variation table 112 second Position variation table

Claims (5)

A stage for placing a wafer having one surface on which a semiconductor circuit is formed on the upper surface;
A probe having a needle tip in contact with the semiconductor circuit and measuring electrical characteristics of the semiconductor circuit;
A position controller for controlling the position of the stage or the probe;
A timekeeping unit for measuring time;
A storage unit that stores a movement distance of the probe with respect to the measurement start position of the probe at a predetermined time interval in a position variation table;
For each time interval, refer to the position variation table, obtain the moving distance, and calculate a moving position of the stage and the probe;
With
The prober apparatus, wherein the position control unit controls the position of the stage or the probe based on the moving position. A stage for placing a wafer having one surface on which a semiconductor circuit is formed on the upper surface;
A probe having a needle tip in contact with the semiconductor circuit and measuring electrical characteristics of the semiconductor circuit;
A distance measuring unit that measures a moving distance from the measurement start position of the probe tip of the probe;
A position controller for controlling the position of the stage or the probe;
A timekeeping unit for measuring time;
A detection unit for detecting a contact state indicating whether the probe tip of the probe and the semiconductor circuit are in contact or non-contact;
A variation measuring unit that measures the moving distance measured by the distance measuring unit at predetermined time intervals;
A storage unit for storing a position variation table in which the contact state detected by the detection unit and the movement distance for each time interval are recorded in association with each other;
According to the contact state detected by the detection unit, for each time interval, refer to the position variation table, obtain the movement distance, and calculate a movement position of the stage and the probe;
With
The prober apparatus, wherein the position control unit controls the position of the stage or the probe based on the moving position. The prober device according to claim 1 or 2,
A temperature control unit for controlling the wafer to a predetermined set temperature;
The storage unit stores a plurality of the position variation tables for a plurality of set temperatures,
The prober device using the position variation table corresponding to the set temperature. The prober device according to claim 2 or 3,
A first recording unit for bringing the probe tip of the probe into contact with the semiconductor circuit and recording the moving distance for each time interval in a first position variation table;
A determination unit for determining whether or not the fluctuation range of the movement distance is less than a predetermined value;
When it is determined that the fluctuation range is less than a predetermined value, the probe tip of the probe is separated from the semiconductor circuit, and the movement distance for each time interval is recorded in a second position fluctuation table. A recording section;
A correction unit for correcting the time of the time measuring unit;
With
When measuring the electrical characteristics of the semiconductor circuit, the timing unit counts a first elapsed time after the probe tip of the probe is brought into contact with the semiconductor circuit, and the calculation unit includes the first The movement position is calculated from the movement distance obtained by referring to the first position variation table of the storage unit at each time interval according to the elapsed time of 1, and the position control unit Controlling the position for each time interval based on the position;
When the measurement of the semiconductor circuit is resumed after being interrupted, the timing unit counts a second elapsed time from when the probe tip of the probe is separated from the semiconductor circuit to contact again, and the calculation unit includes: According to the second elapsed time, the movement position is calculated from the movement distance obtained by referring to the second position variation table, and the position control unit calculates the position based on the movement position. Control
After the measurement of the semiconductor circuit is resumed, the correction unit corrects the first elapsed time of the time measuring unit to an elapsed time acquired by referring to the first position variation table from the moving distance, and the calculation unit Calculates the movement position from the movement distance obtained by referring to the position variation table of the storage unit for each time interval according to the first time passage, and the position control unit A prober apparatus, wherein the position is controlled at each time interval based on a moving position. The prober device according to claim 4,
When the detection unit detects that the contact state is non-contact, a time determination unit that determines whether or not the non-contact time measured by the time measuring unit is within a predetermined time; and
When the non-contact time is determined to be within a predetermined time by the time determination unit, the contact state is determined to be contact, and the non-contact time exceeds the predetermined time by the time determination unit. And a determination unit that determines that the contact state is non-contact when it is determined that the contact state is non-contact.

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