JP2005302851A - Substrate mounting stand and heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate mounting stand which can raise and drop the temperature of a substrate with good controllability by using a thermoelement, and in which durability of the thermoelement by generated heat is high. <P>SOLUTION: A mounting member 10 is constituted of a first plate 11 having a mounting face on which the substrate is mounted, a second plate 12 which is installed opposite to the first plate 11, a plurality of thermoelements 13 sandwiched between the first plate 11 and the second plate 12, and wiring patterns 11a and 12a which are formed on a face of a side of the thermoelements of the first plate and the second plate and supply power to a plurality of the thermoelements 13. A wafer mounting stand is constituted in a state where the member is mounted on a base plate 4 of a treatment container having a cooling water channel 15. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate mounting table on which a substrate is placed when a single wafer type heat treatment such as an annealing process or a film forming process is performed on a substrate such as a semiconductor wafer, and a heat treatment that performs such a heat treatment on the substrate. Relates to the device.

  When manufacturing semiconductor devices, there are various heat treatments for semiconductor wafers such as film formation, pattern etching, oxidative diffusion acid treatment, modification, annealing, etc. Recently, high integration of LSI, high speed The design rules of semiconductor elements constituting an LSI are becoming increasingly finer due to the demand for the realization, and along with this, the conditions for these heat treatments are becoming more severe.

  For example, after performing ion implantation of impurities into the channel layer of a transistor, an example of annealing performed to stabilize the atomic arrangement structure, the diffusion of atoms progresses and stabilizes by increasing the annealing time. However, since impurity atoms diffuse deeply into the film thickness direction and penetrate through, it is necessary to anneal with good controllability in a short time as much as possible in order to diffuse it to a desired thickness.

  As such an annealing apparatus, conventionally, an apparatus that rapidly heats using a lamp and then rapidly cools to a predetermined temperature by cooling with cooling water or the like is used. However, it cannot always be said that it has sufficient performance.

As a technique for quickly raising and lowering the temperature of a substrate with high accuracy, a technique using a thermoelectric element such as a Peltier element during heat treatment is known (for example, Patent Document 1). Such a thermoelectric element is usually marketed in the state of a module in which a large number of thermoelectric elements are mounted in a metal container. When such a thermoelectric element module is applied to the annealing apparatus, a substrate is placed. It is conceivable to arrange a large number of thermoelectric module modules in close contact with each other between the plate having the cooling water channel formed thereon.
JP 2001-85408 A

  However, when a commercially available thermoelectric element module is used in this way, the adhesion between the thermoelectric element, the susceptor and the cooling water plate is not sufficient, and the thermal resistance cannot be suppressed. In addition, the commercially available thermoelectric element module has an insufficient adhesion between the wiring terminal and the internal thermoelectric element, and the electric resistance has to be increased. For this reason, the function of a thermoelectric element cannot fully be demonstrated, and quick raising / lowering temperature with sufficient controllability cannot fully be achieved. Furthermore, since a commercially available thermoelectric element module has a black box inside, it is difficult to provide durability of the element according to deformation caused by generated heat.

  The present invention has been made in view of such circumstances, and provides a substrate mounting table that can raise and lower the temperature of a substrate with good controllability using a thermoelectric element and has high durability of the thermoelectric element due to generated heat. For the purpose. Moreover, it aims at providing the heat processing apparatus which mounts such a substrate mounting base.

  In order to solve the above problems, according to a first aspect of the present invention, a first plate having a placement surface on which a substrate is placed, and a second plate provided to face the first plate, A plurality of thermoelectric elements sandwiched between the first plate and the second plate, and the plurality of thermoelectric elements formed on the thermoelectric element side surface of the first plate and the second plate. And a wiring pattern for supplying power to the thermoelectric element.

  In a second aspect of the present invention, a first plate having a placement surface on which a substrate is placed, a second plate provided facing the first plate, the first plate, A plurality of thermoelectric elements sandwiched between the second plate and a power supply to the plurality of thermoelectric elements formed on the surface of the first plate and the second plate on the thermoelectric element side Provided is a substrate mounting table comprising a wiring pattern and a coolant channel provided on the second plate side.

  In a third aspect of the present invention, a first plate having a placement surface on which a substrate is placed, a second plate provided to face the first plate, the first plate, and the A plurality of thermoelectric element units sandwiched between the second plate and a refrigerant flow path provided on the second plate side, wherein the thermoelectric element units are provided to face each other; A pair of plates; a plurality of thermoelectric elements sandwiched between the plates; and a wiring pattern for supplying power to the plurality of thermoelectric elements formed on a surface of the pair of plates on the thermoelectric element side A substrate mounting table is provided.

  In a fourth aspect of the present invention, a processing container that accommodates a substrate to be processed, a substrate mounting table that is provided in the processing container and on which the substrate to be processed is mounted, and a substrate to be processed on the substrate mounting table is heated. A heat treatment apparatus that heats the substrate to be processed and heat-treats the substrate mounting table, wherein the substrate mounting table includes a first plate having a mounting surface on which the substrate to be processed is mounted; A second plate provided opposite to the first plate; a plurality of thermoelectric elements sandwiched between the first plate and the second plate; the first plate and the first plate; A wiring pattern for supplying power to the plurality of thermoelectric elements formed on a surface of the second plate on the thermoelectric element side; and a refrigerant flow path provided on the second plate side. A heat treatment apparatus is provided.

  In a fifth aspect of the present invention, a processing container that accommodates a substrate to be processed, a substrate mounting table that is provided in the processing container and on which the substrate to be processed is mounted, and a substrate to be processed on the substrate mounting table is heated. A heat treatment apparatus that heats the substrate to be processed and heat-treats the substrate mounting table, wherein the substrate mounting table includes a first plate having a mounting surface on which the substrate to be processed is mounted; A second plate provided opposite to the first plate, a plurality of thermoelectric element units sandwiched between the first plate and the second plate, and on the second plate side Each thermoelectric element unit includes a pair of plates provided opposite to each other, a plurality of thermoelectric elements sandwiched between the plates, and the pair of plates. The plurality of heats formed on the surface on the thermoelectric element side Providing a heat treatment apparatus and having a wiring pattern for supplying power to the device.

  In the second to fifth aspects, the coolant channel may be provided in the second plate. Also, between the plurality of thermoelectric elements in the first, second and fourth viewpoints and the first plate and / or the second plate, or the thermoelectric elements in the third and fifth aspects A thermal stress relaxation member that relaxes thermal stress may be provided between at least one of the pair of plates. As the thermal stress relaxation member, the thermal stress relaxation member is made of a metal or alloy having a lower hardness than the thermoelectric element, or a metal or alloy having a higher hardness than the thermoelectric element provided on the thermoelectric element side. The first metal part and the second metal part made of a metal or alloy having a lower hardness than the thermoelectric element provided on the outside, and the one having a leaf spring structure are exemplified. In the third and fifth aspects, it is preferable that the thermoelectric element unit has a hexagonal shape or a quadrangular shape. In the fourth and fifth aspects, as the heating means, one having a heating lamp provided on a ceiling portion of the processing container via a transmission window can be used.

  In the first to fifth aspects, the thermoelectric element is configured by one P-type thermoelectric element and one N-type thermoelectric element. In this case, a hexagonal element can be used as the thermoelectric element.

  According to the first, second, and fourth aspects of the present invention, the substrate mounting table includes a first plate having a mounting surface on which the substrate is mounted, and a first plate that faces the first plate. Since it has a structure in which a plurality of thermoelectric elements are sandwiched between two plates, and a wiring pattern for supplying power to the plurality of thermoelectric elements is provided on the surface of the first plate and the second plate on the thermoelectric element side, The thermoelectric element and each plate can be directly adhered to ensure good heat transfer, and good electrical conductivity can be ensured by the wiring pattern, so that the function of the thermoelectric element can be effectively exhibited. For this reason, it is possible to quickly raise and lower the substrate temperature with good controllability. Further, the thermoelectric element can be arranged in advance in a pattern that can relieve the thermal stress due to the difference in thermal expansion coefficient, and the durability of the element against the generated heat can be increased.

  According to the third and fifth aspects of the present invention, between a first plate having a mounting surface on which a substrate is mounted and a second plate provided to face the first plate, A pair of plates provided opposite to each other, a plurality of thermoelectric elements sandwiched between these plates, and a power supply to the plurality of thermoelectric elements formed on the surface of the pair of plates on the thermoelectric element side Since the thermoelectric element unit having the wiring pattern is sandwiched, the pair of plates of the thermoelectric element unit and the thermoelectric element are in direct contact with each other, and the pair of plates and the first and second plates are in direct contact with each other. Thus, good heat transfer can be ensured, and good electrical conductivity can be ensured by the wiring pattern, so that the function of the thermoelectric element can be effectively exhibited. For this reason, it is possible to quickly raise and lower the substrate temperature with good controllability. Further, the thermoelectric element can be arranged in advance in a pattern that can relieve the thermal stress due to the difference in thermal expansion coefficient, and the durability of the element against the generated heat can be increased. Furthermore, the thermoelectric element unit can be appropriately arranged according to the shape and size of the substrate mounting table, and the degree of freedom of application is high.

Embodiments of the present invention will be specifically described below with reference to the accompanying drawings.
1 is a cross-sectional view showing a heat treatment apparatus according to the first embodiment of the present invention, FIG. 2 is an exploded perspective view showing the mounting member of the heat treatment apparatus of FIG. 1 in an exploded manner, and FIG. 3 is used for the mounting member. 4 is an enlarged view of the thermoelectric element, FIG. 4 is a perspective view showing a wiring pattern formed on the first and second plates of the mounting member, and FIG. 5 is an enlarged view of the mounting member of the heat treatment apparatus of FIG. FIG. 6 is a diagram for explaining the power feeding zone.
It is.

  As shown in FIG. 1, the heat treatment apparatus 100 has a cylindrical casing 1 made of, for example, aluminum. A ceiling portion of the housing 1 is opened, and a transparent window 3 having a transparent plate shape is provided in an airtight manner through a seal member 2 so as to cover the opening. On the other hand, the bottom of the housing 1 is also opened, and a thick bottom plate 4 made of aluminum is airtightly provided via a seal member 5 so as to cover the opening. The casing 1, the transmission window 3, and the bottom plate 4 constitute a processing container having an airtight processing space S therein.

  On the bottom plate 4, a disk-shaped mounting member 10 on which a semiconductor wafer W that is a substrate to be processed is mounted is provided in close contact with the transmission window 3 so as to face the transmission window 3. The mounting member 10 includes a first plate 11 having a mounting surface on which the wafer W is mounted, a second plate 12 provided to face the first plate 11, and a flat surface on the entire surface therebetween. And a large number of thermoelectric elements 13 that are provided as a result. An example of the thermoelement 13 is a Peltier element. The first plate 11 and the second plate 12 are made of a material having high thermal conductivity such as AlN.

  A cooling water flow path 15 through which cooling water as a cooling medium flows is provided in the bottom plate 4, and cooling water is supplied to the cooling water flow path 15 from a cooling water supply source (not shown) via a cooling water introduction pipe 16. The cooling water in the cooling water flow path 15 is discharged through the cooling water discharge pipe 17. The wafer W can be quickly cooled by passing the cooling water in this way. That is, the bottom plate 4 also functions as a cooling water jacket. The mounting member 10 and the bottom plate 4 functioning as a cooling water jacket constitute a wafer mounting table.

  A loading / unloading port 21 for loading / unloading the wafer W is provided on the side wall of the housing 1, and the loading / unloading port 21 is opened and closed by a gate valve 22. Further, a gas nozzle 23 for supplying a processing gas necessary for heat treatment to the processing space S is provided on the side wall of the housing 1. An exhaust pipe 24 is connected to the bottom plate 4, and the inside of the processing space S can be evacuated by an exhaust device (not shown) through the exhaust pipe 24.

  Wafer elevating pins 26 are passed through the mounting member 10 and the bottom plate 4, and are provided so as to protrude and retract with respect to the wafer W mounting surface of the mounting member 10. Then, the wafer W is delivered with the wafer lift pins raised.

  A wafer heating unit 30 is provided above the transmission window 3. The wafer heating unit 30 includes a mountain-shaped housing 31 and a heating lamp 32 provided inside the central top of the housing 31. A light reflecting mirror 33 is formed inside the housing 31.

  The housing 1 and the bottom plate 4 and the housing 1 and the housing 31 are fastened by bolts 35. The transmission window 3 is fixed by the housing 31 when the housing 31 is fastened to the housing 1.

  A thermoelectric element measurement control unit 41 is connected to the thermoelectric element 13 of the mounting member 10, and the thermoelectric element measurement control unit 41 controls power feeding to the thermoelectric element 13. On the other hand, a heating lamp control unit 42 is connected to the heating lamp 32 of the wafer heating unit 30, and the heating lamp control unit 42 controls power supply to the heating lamp 32.

  As shown in FIG. 2, the mounting member 10 includes a number of thermoelectric elements between a first plate 11 having a wafer mounting surface and a second plate 12 on the side of the bottom plate 4 that functions as a cooling water jacket. 13 is arranged in a plane and the first and second plates 11 and 12 are pressed from above and below. As shown in FIG. 3, one thermoelectric element 13 includes a P-type thermoelectric element 13a and an N-type thermoelectric element 13b, which are combined to form a hexagonal shape. Further, as shown in FIGS. 4A and 4B, wiring patterns 11a for feeding power to the inside of the first plate 11 and the second plate 12 (on the thermoelectric element side), respectively, 12a is formed. Further, as shown in FIG. 5, the wiring patterns 11a and 12a are formed so that a P-type thermoelectric element 13a and an N-type thermoelectric element 13b are sequentially connected in series.

  Further, as shown in FIG. 6, the power supply to the thermoelectric element 13 is performed by dividing it into three concentric zones. That is, it has a central zone 51 corresponding to the central portion of the mounting member 10, an intermediate zone 52 outside thereof, and an outermost outer zone 53. The thermoelectric element measurement control unit 41 controls the thermoelectric elements 13 of these three zones. The power supply control to each is performed independently.

  In the heat treatment apparatus 100 configured in this manner, first, the wafer W as the substrate to be processed is loaded into the processing space S from the loading / unloading port 21 with the gate valve 22 opened, and the lift pins in the protruding state Then, the wafer W is placed on the substrate 26, and then the lift pins 26 are lowered and placed on the placement member 10, and the gate valve 22 is closed to make the processing space S a sealed space.

Then, for example, N ₂ gas or Ar gas is introduced as a processing gas at a predetermined flow rate into the processing space S through a gas nozzle 23 from a processing gas supply source (not shown), and the processing space S is evacuated through an exhaust pipe 24. And a predetermined pressure, for example, 1 to 100 Pa.

  Next, the heating lamp 32 is turned on based on a command from the heating lamp control unit 42 to start heating the wafer W, and the heating control of the wafer W is performed by the thermoelectric element 13 based on a command from the thermoelectric element measurement control unit 41. For example, rapid heating to 500 to 1000 ° C. is performed. In this case, since heating is performed by the thermoelectric element 13 in addition to lamp heating, the temperature of the wafer W can be raised with good controllability in accordance with the set temperature raising schedule.

  In order to cool rapidly after the heating is completed, a voltage opposite to that at the time of heating is applied from the thermoelectric element measurement control unit 41 to the thermoelectric element 13 to supply cold heat to the wafer W and to flow cooling water through the cooling water flow path 15. Thus, heat is removed from the thermoelectric element 13 to perform rapid cooling.

  In this case, in this embodiment, since the plurality of thermoelectric elements 13 are sandwiched between the first plate 11 and the second plate 12, the thermoelectric element 13 and the plates 11 and 12 are connected to each other. Compared with the case where the conventional thermoelectric element module is used, the thermal resistance between them can be remarkably reduced, and the heat transfer property can be remarkably improved. In addition, since the wiring patterns 11a and 12a for supplying power to the plurality of thermoelectric elements 13 are provided on the surface of the first plate 11 and the second plate 12 on the thermoelectric element side, it is compared with the case where a conventional thermoelectric element module is used. Thus, the electrical resistance of the feeding portion of the thermoelectric element 13 can be significantly reduced. Thus, since the problems of thermal resistance and electrical resistance in the case where a thermoelectric element module has been conventionally used can be solved, the function of the thermoelectric element 13 can be effectively exhibited, and the wafer can be quickly controlled with good controllability. The temperature of W can be raised and lowered. In addition, when the conventional thermoelectric module is used, it is difficult to predict the deformation of the thermoelectric element due to heat, and it is difficult to give the thermoelectric element durability according to the thermal deformation. In the case of the embodiment, since the thermoelectric element 13 is arranged directly between the first and second plates 11 and 12, the thermoelectric element 13 can relieve the thermal stress due to the difference in thermal expansion coefficient in advance. It can arrange | position with a pattern and can make durability of the thermoelectric element 13 with respect to the heat | fever which generate | occur | produces high.

  In the conventional thermoelectric element module, application to heating at about 200 ° C. was the limit, but the thermoelectric element 13 itself is not the thermoelectric element module as in this embodiment, but the first and second plates 11, 12. By appropriately disposing between these, the density of the current supplied to the thermoelectric element 13 can be increased, and it can be applied even at a high temperature of 500 ° C. or higher.

  Thus, after the annealing process is completed, the pressure in the processing space S is adjusted, the gate valve 22 is opened, the wafer W is unloaded, and the heat treatment for one wafer is completed.

  Conventionally, in this type of heat treatment apparatus, the wafer temperature must be measured by installing a dedicated thermocouple or equivalent temperature sensor on the wafer mounting table, and the number of measurement points is limited to a few. Although temperature measurement and temperature control could not be performed on the entire contact portion, when the thermoelectric element 13 is disposed on the entire surface of the mounting member 10 constituting the wafer mounting table as in the present embodiment, The temperature of the entire surface of the wafer W can be measured using the electromotive force of the thermoelectric element 13.

  That is, since a thermoelectric element such as a Peltier element generates an electromotive force according to the temperature, the temperature of the entire surface of the wafer W is measured by measuring the electromotive force of the thermoelectric element 13 disposed so as to correspond to the entire surface of the wafer W. Can be measured. In addition, the temperature at an arbitrary position on the wafer W can be measured by measuring the generated electromotive force of the thermoelectric element at the location where temperature measurement is desired.

  In actual temperature measurement, the power supply is turned off for a predetermined time during the heating or cooling by applying a voltage to the thermoelectric element 13, and the electromotive force is measured during that time to measure the temperature of the entire surface of the wafer W or an arbitrary position. Measure. As a specific example, for the thermoelectric element 13 to be measured, after supplying power for 4 seconds for heating or cooling, the power supply is stopped for 1 second, and the temperature is measured by measuring the electromotive force at that time. By repeating, the temperature every 5 seconds can be measured.

  By performing temperature measurement in this way, temperature measurement and temperature control of the entire wafer surface can be performed, and in-plane uniformity of the heat treatment can be improved. Moreover, since the thermocouple and the temperature sensor which have been conventionally used can be omitted and the apparatus can be simplified, the apparatus cost can be reduced correspondingly.

Next, a structural example that can further improve the durability when the thermoelectric element 13 is deformed by heat will be described.
As described above, in the present embodiment, the thermoelectric element 13 can be arranged in advance in a pattern that can relieve the thermal stress due to the difference in thermal expansion coefficient, and the durability of the thermoelectric element 13 against the generated heat is increased. However, there is a natural limit to the relaxation of thermal stress due to the arrangement of the thermoelectric elements 13. In order to solve such a problem, the stress between the first plate 11 and / or the second plate 12 and the thermoelectric element 13 (P-type thermoelectric element 13a, N-type thermoelectric element 13b) therebetween. It is conceivable to dispose a stress relaxation member that relaxes the above.

  In this example, as shown in FIG. 7, the first plate 11 and the second plate 12 are softer than the thermoelectric element 13 between the thermoelectric element 13 (P-type thermoelectric element 13a, N-type thermoelectric element 13b). It can be mentioned that a stress relaxation member 61 made of metal or alloy is interposed. Since the stress relaxation member 61 also serves as a power feeding path, the electrical resistance is also required to be low. Specifically, if the thermoelectric element 13 has a Mohs hardness of about 5, the Mohs hardness is lower than 5 and the electric resistance is low (Mohs hardness 3.5), Cu (Mohs hardness 3), Au (Mohs hardness). 2.5) etc. can be used.

  Further, when the material constituting the thermoelectric element 13 is easily worn out such as Bi—Te, Zn—Pb, or Si—Ge, the thermoelectric element 13 (P-type thermoelectric) is used as shown in FIG. First, a first metal portion 62 made of a metal or alloy having a hardness higher than that of the thermoelectric element is first formed on the electrode portion at the end of the element 13a and the N-type thermoelectric element 13b), and the hardness is lower than that of the thermoelectric element 13 on the outside thereof. The stress relieving member 64 can also be formed by forming a second metal portion 63 made of metal or alloy. For example, when the thermoelectric element 13 is based on Si, a metal harder than Si, such as Ti (Mohs hardness 9) or W (Mohs hardness 8), is used as the first metal part 62 at the end of the thermoelectric element 13. By forming silicide and forming a stress relieving member 64 by forming a metal having low hardness such as Cu or Au as described above as the second metal portion 63 on the outside thereof, the strength durability of the thermoelectric element 13 is improved. At the same time, the thermal stress can be relaxed. At this time, since the electrode contact portion of the thermoelectric element 13 is silicided, the contact resistance can be reduced.

  Moreover, as a stress relaxation member, the thing using a leaf | plate spring can also be used. For example, as shown in FIG. 9, the stress relaxation member 68 is configured such that the leaf spring portion 66 and the leaf spring portion 67 extend from the connection portion 65 connected to the wiring pattern 11a or 12a. The P-type thermoelectric element 13a and the N-type thermoelectric element 13b of the thermoelectric element 13 can be connected to 67. As a result, even if thermal deformation occurs in the thermoelectric element 13 (P-type thermoelectric element 13a, N-type thermoelectric element 13b) and stress is exerted on the leaf spring portions 66 and 67, these spring forces act as cushions and this stress is applied. Can be absorbed. The stress relaxation member 68 using the leaf spring can be manufactured by bending a single metal plate, for example, a copper plate.

Next, a second embodiment of the present invention will be described.
Since only the structure of the mounting member of the heat treatment apparatus of this embodiment is different from that of the first embodiment, only the mounting member will be described. FIG. 10 is an enlarged sectional view showing a part of the mounting member in the heat treatment apparatus of the present embodiment, and FIG. 11 is an enlarged sectional view showing a part of the thermoelectric element unit in the mounting member. The mounting member 70 of the present embodiment includes a first plate 71 and a second plate 72 configured in the same manner as the first plate 11 and the second plate 12 in the first embodiment. A plurality of thermoelectric element units 73 are sandwiched between the first plate 71 and the second plate 72.

  The thermoelectric element unit 73 includes a pair of plates 74 and 75 provided opposite to each other, a plurality of thermoelectric elements 13 including a P-type thermoelectric element 13a and an N-type thermoelectric element 13b sandwiched between the plates, and a plate 74 and 75, that is, wiring patterns 74 a and 75 a for supplying power to the thermoelectric element 13, respectively formed on the inner surface of the thermoelectric element 13, that is, on the thermoelectric element 13 side surface. As shown in the plan view, the whole has a hexagonal shape or a quadrangular shape.

  In this embodiment, as described above, a plurality of thermoelectric element units 73 are sandwiched between the first plate 71 and the second plate 72, and the thermoelectric element units 73 are provided to face each other. Since the plurality of thermoelectric elements 13 are sandwiched between the pair of plates 74 and 75, the pair of plates 74 and 75 of the thermoelectric element unit 73 and the thermoelectric element 13 are in direct contact with each other and the pair of plates 74, 75 and the first and second plates 71, 72 are in direct contact with each other, and good heat transfer according to the first embodiment can be ensured. Further, since the wiring patterns 74a and 75a are provided on the inner surfaces of the pair of plates 74 and 75, that is, the surface on the thermoelectric element side, and the thermoelectric element 13 is connected thereto, the electric resistance of the feeding portion of the thermoelectric element 13 Can be significantly reduced. Thus, since the problems of thermal resistance and electrical resistance in the case where a thermoelectric element module has been conventionally used can be solved, the function of the thermoelectric element 13 can be effectively exhibited, and the wafer can be quickly controlled with good controllability. The temperature of W can be raised and lowered. Further, similarly to the first embodiment, the thermoelectric element 13 can be arranged in advance in a pattern that can relieve the thermal stress due to the difference in thermal expansion coefficient, and the durability of the thermoelectric element 13 against the generated heat is increased. Can do. Furthermore, the thermoelectric element unit 73 can be appropriately arranged according to the shape and size of the mounting member, and the degree of freedom of application is high. In this case, as shown in FIG. 12, the thermoelectric element unit 73 can be filled and arranged by making the shape of the thermoelectric element unit 73 a hexagonal shape or a quadrangular shape, and an efficient temperature increase / decrease can be performed. In particular, the hexagonal shape allows the thermoelectric element unit having the same shape to be easily approximated to a circular shape that is a wafer shape, and can extremely efficiently raise and lower the temperature by eliminating waste of the edge portion as much as possible.

  The present invention is not limited to the above embodiment and can be variously modified. For example, in the above embodiment, the second plate and the cooling water jacket are provided separately, but the cooling water jacket may be provided on the second plate. In the above embodiment, the case where the annealing process is performed by lamp heating has been described. However, the present invention is not limited to this, and other heating means such as resistance heating may be used. It can also be applied to other heat treatments such as oxidation diffusion acid treatment and modification treatment. Further, although a semiconductor wafer has been described as an example of a substrate to be processed, other substrates such as a flat display substrate typified by a liquid crystal display substrate may be used.

Sectional drawing which shows the heat processing apparatus which concerns on the 1st Embodiment of this invention. The disassembled perspective view which decomposes | disassembles and shows the mounting member of the heat processing apparatus of FIG. The figure which expands and shows the thermoelectric element used for a mounting member. The perspective view which shows the wiring pattern formed in the 1st and 2nd plate of a mounting member. Sectional drawing which expands and shows the mounting member of the heat processing apparatus of FIG. The figure for demonstrating an electric power feeding zone. The figure which shows an example of the mounting member which provided the stress relaxation member. The figure which shows the other example of the mounting member which provided the stress relaxation member. The figure which shows the further another example of the mounting member which provided the stress relaxation member. The figure which expands and shows a part of mounting member of the heat processing apparatus which concerns on the 2nd Embodiment of this invention. Sectional drawing which expands and shows a part of thermoelectric element unit in a mounting member. The figure for demonstrating the shape of a thermoelectric element unit.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Housing 3 ... Transmission window 4 ... Bottom plate 10, 70 ... Mounting member 11, 71 ... 1st plate 12, 72 ... 2nd plate 11a, 12a, 74a, 75a ... Wiring pattern 13 ... Thermoelectric element 13a ... P-type thermoelectric element 13b ... N-type thermoelectric element 15 ... cooling water flow path 30 ... heating part 32 ... heating lamp 41 ... thermoelectric element measurement control part 42 ... heating lamp control parts 61, 64, 68 ... stress relaxation member 73 ... thermoelectric element unit 74, 75 ... A pair of plates 100 ... Heat treatment apparatus W ... Semiconductor wafer (substrate)

Claims (24)

A first plate having a mounting surface for mounting a substrate;
A second plate provided opposite the first plate;
A plurality of thermoelectric elements sandwiched between the first plate and the second plate;
A substrate mounting table, comprising: a wiring pattern for supplying electric power to the plurality of thermoelectric elements formed on a surface of the first plate and the second plate on the thermoelectric element side. A first plate having a mounting surface for mounting a substrate;
A second plate provided opposite the first plate;
A plurality of thermoelectric elements sandwiched between the first plate and the second plate;
A wiring pattern for supplying power to the plurality of thermoelectric elements, formed on the thermoelectric element side surfaces of the first plate and the second plate;
A substrate mounting table comprising a coolant channel provided on the second plate side. A first plate having a mounting surface for mounting a substrate;
A second plate provided opposite the first plate;
A plurality of thermoelectric element units sandwiched between the first plate and the second plate;
A refrigerant flow path provided on the second plate side,
Each thermoelectric element unit is formed on a pair of plates provided opposite to each other, a plurality of thermoelectric elements sandwiched between these plates, and the surface of the pair of plates on the thermoelectric element side, And a wiring pattern for supplying power to the plurality of thermoelectric elements.   The substrate mounting table according to claim 3, wherein the thermoelectric element unit has a hexagonal shape or a quadrangular shape.   5. The substrate mounting table according to claim 2, wherein the coolant channel is provided in the second plate. 6.   The thermal stress relieving member for relieving thermal stress provided between the plurality of thermoelectric elements and the first plate and / or the second plate is further provided. 2. The substrate mounting table according to 2.   5. The substrate mounting according to claim 3, further comprising a thermal stress relaxation member that relaxes thermal stress provided between the plurality of thermoelectric elements and at least one of the pair of plates. Stand.   The substrate mounting table according to claim 6, wherein the thermal stress relaxation member is made of a metal or an alloy having a hardness lower than that of the thermoelectric element.   The thermal stress relaxation member includes a first metal part made of a metal or alloy having a higher hardness than the thermoelectric element provided on the thermoelectric element side, and a metal having a lower hardness than the thermoelectric element provided on the outer side. The substrate mounting table according to claim 6, further comprising a second metal portion made of an alloy.   The substrate mounting table according to claim 6, wherein the thermal stress relaxation member has a leaf spring structure.   The substrate mounting table according to any one of claims 1 to 10, wherein the thermoelectric element is configured by one P-type thermoelectric element and one N-type thermoelectric element.   The substrate mounting table according to claim 11, wherein the thermoelectric element has a hexagonal shape. A processing container for storing a substrate to be processed;
A substrate mounting table provided in the processing container and for mounting a substrate to be processed;
A heating unit for heating the substrate to be processed on the substrate mounting table, and performing a heat treatment by heating the substrate to be processed,
The substrate mounting table is
A first plate having a mounting surface for mounting a substrate to be processed;
A second plate provided opposite the first plate;
A plurality of thermoelectric elements sandwiched between the first plate and the second plate;
A wiring pattern for supplying power to the plurality of thermoelectric elements, formed on the thermoelectric element side surfaces of the first plate and the second plate;
A heat treatment apparatus comprising: a refrigerant flow path provided on the second plate side. A processing container for storing a substrate to be processed;
A substrate mounting table provided in the processing container and for mounting a substrate to be processed;
A heating unit for heating the substrate to be processed on the substrate mounting table, and performing a heat treatment by heating the substrate to be processed,
The substrate mounting table is
A first plate having a mounting surface for mounting a substrate to be processed;
A second plate provided opposite the first plate;
A plurality of thermoelectric element units sandwiched between the first plate and the second plate;
A refrigerant flow path provided on the second plate side,
Each thermoelectric element unit is formed on a pair of plates provided opposite to each other, a plurality of thermoelectric elements sandwiched between these plates, and the surface of the pair of plates on the thermoelectric element side, And a wiring pattern for supplying power to the plurality of thermoelectric elements.   The heat treatment apparatus according to claim 14, wherein the thermoelectric element unit has a hexagonal shape or a quadrangular shape.   The thermal stress relaxation member that relaxes thermal stress provided between the plurality of thermoelectric elements and the first plate and / or the second plate is further provided. Heat treatment equipment.   The heat treatment apparatus according to claim 14, further comprising a thermal stress relaxation member that relaxes thermal stress provided between the plurality of thermoelectric elements and at least one of the pair of plates. .   The heat treatment apparatus according to claim 16 or 17, wherein the thermal stress relaxation member is made of a metal or an alloy having a hardness lower than that of the thermoelectric element.   The thermal stress relaxation member includes a first metal part made of a metal or an alloy having a higher hardness than the thermoelectric element provided on the thermoelectric element side, and the thermoelectric element provided outside the first metal part. 18. The heat treatment apparatus according to claim 16, further comprising a second metal portion made of a metal or alloy having low hardness.   The heat treatment apparatus according to claim 16 or 17, wherein the thermal stress relaxation member has a leaf spring structure.   The heat treatment apparatus according to any one of claims 13 to 20, wherein the coolant channel is provided in the second plate.   The heat treatment apparatus according to any one of claims 13 to 21, wherein the thermoelectric element is composed of one P-type thermoelectric element and one N-type thermoelectric element.   The heat treatment apparatus according to claim 22, wherein the thermoelectric element pair has a hexagonal shape. The heat treatment apparatus according to any one of claims 13 to 23, wherein the heating unit includes a heating lamp provided on a ceiling portion of the processing container via a transmission window.

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