JP2004359478A - Method for controlling form/position of fibrous carbon, fibrous carbon element position-controlled using the method, and device using the element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for controlling the form/position of fibrous carbon by which the growth position of the fibrous carbon is controlled in accuracy of nanometric order, a position-controlled fibrous carbon element, and a device using the element. <P>SOLUTION: The fibrous carbon 5 is formed by implanting a catalytic metal ion 4 on the fixed position of the surface of a substrate 1 using the ion implantation method, the focused ion beam method or the single ion implantation method and using a catalytic metal as a catalyst. Various devices are formed using the fibrous carbon 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for controlling the form and position of fibrous carbon, a fibrous carbon element whose position is controlled by using the method, and a device using the element.
[0002]
[Prior art]
In addition to single-wall or multi-wall carbon nanotubes, carbon fiber, etc., fibrous carbon, which is a carbon fiber structure containing carbon or heterogeneous materials, has a nanometer-scale structure without fluctuation, and a semiconductor that changes depending on the winding and thickness of graphite. It has many attractive physical properties as a bottom-up nanomaterial, such as a wide range of electrical conductivity from metal to metal, high allowable current density, lightweight and excellent mechanical strength, thermal conductivity superior to diamond, electron emission device, Probes, devices that make up large-scale integrated circuits, nanodevices, molecular devices, single-electron devices, thin-film (two-dimensional), quantum wire (one-dimensional), quantum dot (zero-dimensional) devices, photonic devices, quantum computing devices Performance improvement for such fields as switching devices or wiring connecting devices. Stays improvement is expected (for example, see Patent Document 1).
[0003]
As a method of manufacturing such a device, a fibrous carbon separately formed is randomly dispersed in a region where an electrode is formed in advance, and after confirming that one or both ends of the fibrous carbon are located on the electrode. , Which form the device. There is also a device in which a device is formed by randomly dispersing and then moving to a predetermined position with a single needle of an atomic force microscope (AFM). Further, there is a device in which a catalyst is patterned by lithography technology to control a growth position of fibrous carbon to form a device (for example, see Patent Document 2).
[0004]
[Patent Document 1]
JP 2003-123623 A (Page 2, FIG. 1)
[Patent Document 2]
JP-A-2002-118248 (page 3, page 5, FIG. 3)
[0005]
[Problems to be solved by the invention]
However, in the method of randomly dispersing fibrous carbon in a region where an electrode is formed in advance, a device can be formed only when one or both ends of the fibrous carbon are accidentally positioned on the electrode, and between devices and between wirings. However, there is a possibility that the carbon fiber may be short-circuited, and the position controllability of the fibrous carbon was extremely poor. Further, the method of moving to a predetermined position with a single needle of the atomic force microscope has a problem that the throughput is low and the cost is high. Further, the method using the lithography technique has a problem that the control accuracy is still tens of nm and an expensive high-precision mask is required.
[0006]
The present invention has been made in view of the above circumstances, and it is possible to freely control the growth position of fibrous carbon on a solid surface at low cost with nanometer order accuracy, and to improve throughput and yield. It is an object of the present invention to provide a method and a method for controlling the form and position of fibrous carbon, and to provide a fibrous carbon element whose position is controlled and a device using the element.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the method for controlling the form and position of fibrous carbon according to claim 1 of the present invention is characterized in that a catalytic element is formed on a substrate by any one of an ion implantation method, a focused ion beam method and a single ion implantation method. It is characterized in that the carbon is injected into a predetermined position on the surface to form fibrous carbon using the catalyst element as a catalyst.
[0008]
As a result, the growth position of the fibrous carbon can be freely controlled on the solid surface with a precision of the order of nanometers, so that the throughput and the yield can be improved as compared with the conventional one, and the cost can be reduced. Can be achieved.
[0009]
In the method for controlling the form and position of fibrous carbon according to the second aspect of the present invention, the protection method according to the first aspect, wherein the implanted ions are adjusted to be located on the surface of the base material before the catalyst element is implanted. It is characterized in that a film is formed on a substrate surface.
[0010]
Thereby, since the position of the catalyst element in the depth direction can be controlled, the form and position of the fibrous carbon can be surely controlled, and the yield can be improved.
[0011]
The fibrous carbon element according to claim 3 of the present invention has one end fixed to the position of the catalytic element whose position is controlled on the substrate surface by any one of the ion implantation method, the focused ion beam method, and the single ion implantation method. It is characterized by having.
[0012]
Thus, the fibrous carbon element whose position is accurately controlled can be applied to various devices, so that it is possible to achieve high functionality and low cost of the device.
[0013]
In the fibrous carbon element according to claim 4 of the present invention, both ends are fixed to the position of the catalytic element whose position is controlled on the substrate surface by any one of the ion implantation method, the focused ion beam method, and the single ion implantation method. It is characterized by having.
[0014]
Thereby, since the fibrous carbon element in which the positions of both ends are accurately controlled can be applied to various devices, it is possible to achieve high functionality and low cost of the device.
[0015]
The device according to claim 5, wherein the device has an electron-emitting portion capable of emitting electrons, wherein the electron-emitting portion is formed on a substrate by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. It is characterized by comprising a fibrous carbon element having one end fixed to the position of the catalytic element whose position is controlled on the surface.
[0016]
Thus, since the fibrous carbon element whose position is accurately controlled is applied to a device having an electron emitting portion, stable electron emission can be performed with low power consumption.
[0017]
The device according to claim 6, wherein the probe has a probe capable of detecting a displacement, wherein the probe is provided on the surface of the base material by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. And a fibrous carbon element having one end fixed to the position of the catalytic element whose position is controlled.
[0018]
Thus, since the fibrous carbon element whose position is accurately controlled is applied to a device having a probe capable of detecting displacement, observation with high reproducibility and high resolution can be performed.
[0019]
A device according to claim 7 of the present invention comprises a source for supplying a carrier, a drain for receiving the carrier, and a gate for controlling the current flowing through the channel by changing the conductivity of the channel, the current path between them. In the device, the channel is fibrous carbon whose both ends are fixed to the position of the catalytic element whose position is controlled in the source and the drain by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. It is characterized by comprising an element.
[0020]
Thus, since the fibrous carbon element whose position is accurately controlled is applied to the channel, the device can be miniaturized, and the calculation speed can be improved and the power consumption can be reduced.
[0021]
The device according to claim 8, wherein the device includes a plurality of electronic elements and a wiring connecting the electronic elements, wherein the wiring is formed by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. And a fibrous carbon element having both ends fixed to the position of the catalytic element whose position is controlled by the electronic element.
[0022]
Thus, since the fibrous carbon element whose position is accurately controlled is applied to the wiring, the device can be miniaturized, and power consumption and cost can be reduced.
[0023]
A device according to claim 9 of the present invention comprises a source for supplying a carrier, a drain for receiving the carrier, and a gate for controlling the current flowing through the channel by changing the conductivity of the channel, the current path between them. A device comprising: a plurality of electronic elements consisting of: and a wiring connecting the electronic elements, wherein the channel is position-controlled to the source and the drain by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. The wiring was controlled in position by the electronic element by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. Characterized by a fibrous carbon element fixed at both ends to the position of the catalytic element A.
[0024]
As a result, since the fibrous carbon element whose position is accurately controlled is applied to the channel and the wiring, the device can be miniaturized, and the calculation speed, power consumption, and cost can be reduced. it can.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
The fibrous carbon in the present invention refers to single-walled and multi-walled carbon nanotubes and carbon fibers, as well as a carbon fiber structure containing carbon or a different substance, and may contain impurities other than carbon. The fibrous carbon includes iron (Fe), cobalt (Co), nickel (Ni), ruthenium (Ru), rhodium (Rh), palladium (Pd), platinum (Pt), lanthanum (La), and yttrium (Y). And the like are selectively grown as catalysts for promoting the growth of fibrous carbon. Therefore, in order to control the form and position of fibrous carbon, control of the amount and position of the catalytic metal is key.
[0026]
Methods for controlling the catalyst at a predetermined position on a base material such as a substrate with nanometer-order accuracy include a controllable ion implantation method, in particular, a focused ion beam method in which a catalyst metal released from an ion source is ionized and focused. There is a single ion implantation method in which the number and position of ions are controlled and introduced into a substrate (base material) using a focused ion beam or a micro ion beam. According to these methods, since the fibrous carbon grows selectively using the introduced atoms as a catalyst, the position of the fibrous carbon can be controlled with a maskless degree and freely on the substrate surface with nanometer order accuracy. Is possible.
[0027]
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0028]
The first embodiment of the present invention is a form / position control method of fibrous carbon in which a catalytic element is injected into a predetermined position on a substrate surface by an ion implantation method and fibrous carbon is formed using the catalytic element as a catalyst. .
[0029]
First, a protective film, for example, an oxide film 2 is formed on the surface of a substrate on which fibrous carbon is to be grown, for example, a silicon substrate 1 by thermal oxidation (see FIGS. 1A and 1B). This is because when catalytic metal ions 4 having energy are implanted into a solid, the catalytic metal ions 4 are introduced deep into the substrate 1 and dispersed according to a Gaussian distribution in the depth direction. This is to prevent the 4 from disappearing. For example, when Ni ions are implanted at 30 kV, a silicon substrate 1 having an oxide film 2 with a thickness of 30 nm corresponding to the range of Ni ions is used. Thereby, it can be adjusted so that the center of the distribution of the Ni ions is located on the surface of the substrate 1. Note that the protective film does not need to be an oxide film, and any other material can be used as long as the center of the distribution of the catalytic metal ions 4 can be adjusted to the surface of the substrate 1. When the control in the depth direction is not required, the protective film may not be required.
[0030]
Next, a resist pattern 3 is formed on the surface of the oxide film 2 by photolithography or electron beam lithography (see FIG. 3C), and using the resist pattern 3 as a mask, a catalyst element such as Ni ion or the like is formed by ion implantation. Is implanted into the substrate 1 (see FIG. 3D).
[0031]
Thereafter, the resist is removed (FIG. 3E), the oxide film 2 is removed (FIG. 3F), and finally the fibrous carbon 5 is grown (FIG. 3G). Various methods, such as an arc discharge method, a laser ablation method, and a chemical vapor deposition method (Chemical Vapor Deposition: CVD), can be used for the growth method of fibrous carbon. Thereby, the fibrous carbon 5 having one end fixed to a predetermined position of the substrate 1 can be formed.
[0032]
In the above description, Ni is used as the catalyst metal ion. However, any catalyst metal that can be configured as an ion source can be used. For example, iron (Fe), cobalt (Co), ruthenium (Ru) can be used. ), Rhodium (Rh), palladium (Pd), platinum (Pt), lanthanum (La), yttrium (Y), and the like.
[0033]
The second embodiment of the present invention relates to a method for controlling the form and position of fibrous carbon in which a catalytic element is injected into a predetermined position on the surface of a base material by a single ion implantation method and fibrous carbon is formed using the catalytic element as a catalyst. is there.
[0034]
Regarding the single ion implantation method, Iwao Ohdomari et al. Succeeded in extracting a single ion for the first time in the world in 1991, and Japanese Patent Publication No. 7-75156 “Ion irradiation apparatus and method” (Patent No. 2051859), and It is disclosed in U.S. Pat. No. 5,331,161. Also, in 1993, Iwao Ohdomari et al. Developed a single ion implantation apparatus capable of implanting predetermined ions one by one into a target site in an ion implantation apparatus using a focused ion beam or a micro ion beam. No. 2,731,886, entitled "Single Ion Implantation Apparatus and Method", and U.S. Pat. No. 5,539,203. Further, following the above two prior arts, instead of a method of extracting a single ion by chopping an ion beam, a method of extracting a single ion by applying a pulse voltage to a single ion extraction aperture is also described. It was invented by Iwao et al. And disclosed in Japanese Patent Application No. 11-187323 entitled "High-definition single ion extraction method and high-definition single ion implantation apparatus and method to which the method is applied".
[0035]
FIG. 2 shows a schematic configuration diagram of the single ion implantation apparatus 11. The operating principle of the single ion implanter 11 is as follows. The ion beam 13 emitted from the ion source 12 is focused by a condenser lens (not shown) and forms an image at the center of the chopping electrode 14. The voltage controlled by the chopper controller 20 is applied to the chopping electrode 14, and the ion beam 13 is blocked on one side of the objective aperture 15 having the hole 15a. By instantaneously reversing the polarity of the voltage applied to the chopping electrode 14, the ion beam 13 crosses over the objective aperture 15 across the hole 15a and is again blocked. When the ion beam 13 crosses the hole 15a, the ions pass. The number of passing ions is proportional to the beam current, the hole diameter of the objective aperture, and inversely proportional to the chopping speed. By optimizing these, one ion can be extracted from the ion beam 13. The ion beam 13 that has passed through the objective aperture 15 is focused by an objective lens (not shown), and forms an image on the surface of the sample 16. The single ions 17 implanted in the sample 16 are confirmed by detecting secondary electrons 18 emitted from the sample 16 when the ions 17 are implanted by the detector 19. The beam diameter is about 20 nm.
[0036]
FIG. 3 is an image observed by an atomic force microscope after a single ion is implanted into a solid track detector called CR.39 by a single ion implantation method, subjected to a chemical etching treatment, and then subjected to chemical etching. The implanted single ions are observed as etch pits 38. Fibrous carbon selectively grows at the single ion incidence site. The white cross 39 is an aiming mark, and the aiming accuracy is 60 nm as an average error from a target portion. In FIG. 3, single ions are implanted at 1 μm intervals, but they can be implanted at sub-100 nm intervals.
[0037]
FIG. 4 is a diagram showing a process for controlling the position of the fibrous carbon 5 using the single ion implantation method.
[0038]
First, using the single ion implanter 11, a catalytic metal ion 4 (catalytic element), for example, Ni ion, is placed at a position on the substrate 1 (substrate) where the fibrous carbon 5 is to be grown, for example, at a position of a two-dimensional lattice point. Is injected (FIG. 4A). At this time, in order to adjust the center of the distribution of Ni ions to the surface of the substrate 1, ion implantation is performed through an oxide film (protective film) not shown. Thereby, it can be adjusted so that the center of the distribution of the Ni ions is located on the surface of the substrate 1.
[0039]
After the implantation of the catalytic metal ions 4, the oxide film is removed by etching, so that a peak of the implanted ion distribution appears on the surface. The substrate 1 is supplied with a flow rate CH by plasma CVD, for example. ₄ : 0.45 sccm, H ₂ After heat-treating a 4.5 sccm mixed gas at 600 ° C. for 5 minutes, the mixture is kept at 600 ° C. for 10 minutes to grow the fibrous carbon 5 on the substrate 1. Thus, the fibrous carbon 5 having one end fixed at a predetermined position of the substrate 1 can be formed (FIG. 4B).
[0040]
The third embodiment of the present invention shows a basic manufacturing process of a fibrous carbon element whose one end is position-controlled using a form and position control method of fibrous carbon.
[0041]
First, an oxide film (protective film), not shown, is formed on the surface of the substrate 1 to adjust the center of the distribution of the catalytic metal ions 4, for example, Ni ions, to the surface of the substrate 1 (base material). Next, Ni ions are implanted using the single ion implanter 11 (FIG. 5A).
[0042]
Next, after the oxide film is removed by etching, a cone containing Ni atoms at the apex, for example, a pyramid 6, is formed by utilizing the phenomenon that the etching (dissolution) rate of Si by an alkaline solution is significantly reduced by ion irradiation ( FIG. 5 (b)). FIGS. 6 (a) and 6 (b) show that a monovalent Ni ion is applied to a silicon substrate at an accelerating voltage of 30 kV at intervals of 2 μm at a two-dimensional lattice point position at 2 × 10 2 points. ¹⁶ cm ^-2 Although this is an example in which the impurities are implanted one by one, the electrical conductivity and the like at the apex of the pyramid 6 can be freely controlled by the type and amount of the impurity to be implanted.
[0043]
Finally, the fibrous carbon 5 is grown at the apex of the pyramid 6 by performing a plasma CVD process or the like (FIG. 5C). Thereby, the pyramid 6 having the fibrous carbon 5 only at the apex can be manufactured in a few steps without using a mask. Of course, it is also possible to grow the fibrous carbon 5 using an arc discharge method or a laser ablation method.
[0044]
In the above description, the case where the single ion implantation method is used to implant the catalytic metal ions 4 has been described. However, various methods such as the focused ion beam method can be used as long as the amount and position of the catalytic ions can be controlled. Can be used.
[0045]
The fourth embodiment of the present invention relates to a method of controlling the position of one end of a fibrous carbon element using a method and a method of controlling the form and position of fibrous carbon. It is applied to.
[0046]
Hereinafter, a manufacturing process of the electron emission device will be described.
[0047]
First, an oxide film 2 (protective film) is formed on a substrate 1 (base material) made of silicon or the like, and a resist pattern 3 having an electron emission site 7 is formed by lithography (FIG. 7A). Subsequently, catalytic metal ions 4 (catalytic element) were implanted by ion implantation (FIG. 7B), the resist pattern 3 (mask) was removed (FIG. 7C), and the oxide film 2 was removed. Thereafter, a pyramid 6 is formed by using the silicon etching deceleration phenomenon in the ion irradiation region (FIG. 7D). A catalytic metal (catalytic element) exists at the tip of the formed pyramid 6, and the fibrous carbon 5 is selectively grown only at the tip by a plasma CVD growth method or the like (FIG. 7E). Thus, an electron-emitting device such as a light source, a flat panel display, a field emission source, and an electron gun can be formed (FIG. 7F).
[0048]
In the electron-emitting device having the fibrous carbon 5 grown on the substrate 1 as described above, electrons are mainly emitted from the tip of the fibrous carbon 5 due to the electric field concentration effect. At this time, due to the minute tip radius, high aspect shape, and high electrical conductivity of the fibrous carbon 5, electron emission with low power consumption can be realized. Further, the chemical stability of the fibrous carbon 5 can increase the time stability of the emitted electrons.
[0049]
In the above description, the case where the ion implantation method is used for the implantation of the catalytic metal ions 4 has been described. However, it is of course possible to use the single ion implantation method or the focused ion beam method.
[0050]
In the fifth embodiment of the present invention, a fibrous carbon element whose one end is position-controlled by using the form / position control method of fibrous carbon is applied to a probe tip of a scanning probe microscope.
[0051]
Also in this case, similarly to the manufacturing process of the electron emission device, an oxide film 2 (protective film) is formed on a substrate 1 such as silicon, and the electron emission site 7 is patterned by lithography (FIG. 8A), and ion implantation is performed. The catalytic metal (catalytic element) is ion-implanted by the method (FIG. 8B), the resist pattern 3 (mask) is removed (FIG. 8C), and the oxide film 2 is removed (FIG. 8D). After that, the pyramid 6 is formed by using the silicon etching deceleration phenomenon in the ion irradiation area (FIG. 8D). Thereafter, the fibrous carbon 5 is selectively grown only at the tip portion by a plasma CVD growth method or the like (FIG. 8E). Thus, the probe of the scanning probe microscope can be formed (FIG. 8F).
[0052]
The fibrous carbon 5 thus formed has a small tip radius and a high aspect ratio, is suitable for observing various shaped surfaces of a sample under high resolution, and is mechanically flexible and tough. Is suitable for observation with high reproducibility by preventing probe deterioration. In addition, the high electrical conductivity of the fibrous carbon 5 is suitable for electromagnetic measurement at the tip of a scanning probe microscope. Further, the thermal conductivity of the fibrous carbon 5 is suitable for thermodynamic measurement in a scanning probe microscope.
[0053]
In the above description, the case where the ion implantation method is used for the implantation of the catalytic metal ions 4 has been described. However, it is of course possible to use the single ion implantation method or the focused ion beam method.
[0054]
A sixth embodiment of the present invention comprises a source for supplying carriers, a drain for receiving carriers, and a gate for controlling the current flowing through the channel by changing the conductivity of the channel, which is the current path between them. In the device, a fibrous carbon element whose positions are controlled at both ends by using a form / position control method of fibrous carbon is applied to a channel and a wiring.
[0055]
Hereinafter, a manufacturing process of a three-terminal device such as an FET will be described with reference to FIGS. Here, FIGS. 9A to 9N are cross-sectional views showing a manufacturing process on the line AA in FIG. 11, and FIGS. 10A to 10L are sectional views on the line BB in FIG. It is sectional drawing which shows a manufacturing process.
[0056]
As the substrate 21 (base material), an oxide film 22 having a thickness of several to 10 nm and a silicon layer 23 formed on the surface thereof are used (FIGS. 9A and 10A). After cleaning the substrate 1, the upper silicon layer 23 is oxidized to form an oxide film 24 (FIGS. 9B and 10B). Subsequently, in order to form a back gate region for controlling the surface potential from the substrate 1 side, a resist 25 is applied and first lithography is performed (FIGS. 9C and 10C). The silicon layer 23 is removed by etching (FIGS. 9D and 10D). Then, ions are implanted through the oxide film 22 to form the ion-implanted layer 26 in which the resistance of silicon is reduced (FIGS. 9E and 10E). Next, in order to form an electrode, a resist 27 is applied and second lithography is performed (FIGS. 9F and 10F), and the oxide film 24 and the silicon layer 23 are removed by etching (FIG. 9 (g), FIG. 10 (g)). Further, in order to form a contact, a resist 28 is applied and a third lithography is performed (FIGS. 9H and 10H), and the oxide film 24 is removed by etching (FIG. 9I). FIG. 10 (i)). Thereafter, phosphorus or boron-doped polycrystalline silicon and a metal are deposited as an electrode material 29 (FIGS. 9 (j) and 10 (j)), a resist 30 is applied, and a fourth lithography is performed (FIG. 9). (K), FIG. 10 (k)), and electrodes are formed (FIG. 9 (l), FIG. 10 (l)). A catalyst metal 31 is implanted into a predetermined position of the formed electrode by a single ion implantation method (FIGS. 9 (m) and 12 (a)), and a semiconductor carbon nanotube 32 (fibrous carbon) is formed by a plasma CVD growth method. (FIG. 9 (n), FIG. 11 (a), FIG. 12 (b)). Finally, a catalytic metal is implanted into a predetermined position of the gate electrode by an ion implantation method, and a metal carbon nanotube 33 (fibrous carbon) is grown so as to straddle over the semiconductor carbon nanotube 32 starting from the catalytic metal (FIG. 11 (b)). )). This makes it possible to construct a three-terminal device such as an ultra-fine FET.
[0057]
Note that such a method includes an input terminal 35, an output terminal 36, and a power supply 37 as shown in FIG. 13, and in which a channel or a wiring is replaced with a carbon nanotube, a CMOS, a nanodevice, a molecular device, or a single-electron device. It is also applicable to thin films (two-dimensional) quantum wires (one-dimensional) and quantum dots (zero-dimensional), system devices, photonic devices, and quantum computing devices. As a result, it is possible to construct an ultrafine integrated circuit equivalent to one hundredth or less of the current technology.
[0058]
In the above description, the case where the single ion implantation method is used for the implantation of the catalytic metal ions 31 has been described. However, the ion implantation method and the focused ion beam method can of course be used.
[0059]
【The invention's effect】
In the method for controlling the form and position of fibrous carbon according to claim 1 of the present invention, a catalyst element is injected into a predetermined position on the surface of a base material by any of an ion implantation method, a focused ion beam method, and a single ion implantation method. It is characterized in that fibrous carbon is formed by using the catalyst element as a catalyst, whereby it is possible to freely control the growth position of fibrous carbon on the solid surface with nanometer order accuracy, It is possible to improve the throughput and the yield as compared with the conventional one, and to reduce the cost.
[0060]
The method for controlling the form and position of fibrous carbon according to claim 2 is based on the protective film according to claim 1, wherein before the catalyst element is implanted, the ions to be implanted are adjusted to be located on the surface of the base material. It is characterized in that it is formed on the surface of the material, and by this, the position of the catalytic element in the depth direction can be controlled, so that the form and position of the fibrous carbon can be reliably controlled and the yield can be improved. Improvement can be achieved.
[0061]
The fibrous carbon element according to claim 3, wherein one end is fixed to the position of the catalytic element whose position is controlled on the surface of the base material by any one of the ion implantation method, the focused ion beam method, and the single ion implantation method. Since the fibrous carbon element whose position is accurately controlled can be applied to various devices, it is possible to achieve high functionality and low cost of the device.
[0062]
The two ends of the fibrous carbon element according to claim 4 are fixed to the position of the catalytic element whose position is controlled on the substrate surface by any one of the ion implantation method, the focused ion beam method, and the single ion implantation method. This makes it possible to apply the fibrous carbon element in which the positions at both ends are accurately controlled to various devices, thereby achieving high performance and low cost of the device. .
[0063]
The device according to claim 5, further comprising an electron-emitting portion capable of emitting electrons, wherein the electron-emitting portion is formed on the surface of the base material by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. A device comprising a fibrous carbon element having one end fixed to the position of a catalytic element whose position is controlled, whereby the fibrous carbon element whose position is accurately controlled is a device having an electron emitting portion. Therefore, stable electron emission can be performed with low power consumption.
[0064]
7. The device according to claim 6, further comprising a probe capable of detecting a displacement, wherein the position of the probe is controlled on the substrate surface by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. Characterized in that it comprises a fibrous carbon element having one end fixed at the position of the catalyst element, whereby the fibrous carbon element whose position is accurately controlled can be detected by a probe capable of detecting displacement. Since the present invention is applied to a device having a high resolution, observation with high reproducibility can be performed under high resolution.
[0065]
8. The device according to claim 7, comprising a source for supplying the carrier, a drain for receiving the carrier, and a gate for controlling the current flowing through the channel by changing the conductivity of the channel, which is the current path between them. Wherein the channel is formed of a fibrous carbon element having both ends fixed to the position of a catalytic element whose position is controlled in the source and the drain by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. Since a fibrous carbon element whose position is accurately controlled is applied to the channel, the device can be miniaturized, and the calculation speed and power consumption can be reduced. be able to.
[0066]
The device according to claim 8, wherein the device includes a plurality of electronic elements and a wiring connecting the electronic elements, wherein the wiring is formed by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. It is characterized by comprising a fibrous carbon element whose both ends are fixed to the position of the catalytic element whose position is controlled by the element, whereby the fibrous carbon element whose position is accurately controlled is applied to the wiring. Therefore, the device can be miniaturized, and power consumption and cost can be reduced.
[0067]
10. The device according to claim 9, comprising a source for supplying carriers, a drain for receiving carriers, and a gate for controlling the current flowing through the channel by changing the conductivity of the channel, which is the current path between them. A device comprising: an electronic device of claim 1; and a wiring connecting the electronic device, wherein the channel has a position controlled at the source and the drain by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. The wiring is made of a fibrous carbon element having both ends fixed to the position of the element, and the wiring is made of a catalytic element whose position is controlled in the electronic element by one of an ion implantation method, a focused ion beam method, and a single ion implantation method. It is characterized by being made of a fibrous carbon element having both ends fixed at the position, Thereby, since the fibrous carbon element whose position is accurately controlled is applied to the channel and the wiring, the device can be miniaturized, and the calculation speed, the power consumption, and the cost can be reduced. it can.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a method for controlling the form and position of fibrous carbon by an ion implantation method of the present invention.
FIG. 2 is a schematic configuration diagram showing a single ion implantation apparatus.
FIG. 3 is an atomic force microscope image showing a single ion irradiation mark.
FIG. 4 is a schematic perspective view for explaining a form / position control method of fibrous carbon by a single ion implantation method of the present invention.
FIG. 5 is a schematic perspective view illustrating a basic manufacturing process of the fibrous carbon element of the present invention.
FIG. 6 is an electron micrograph showing (a) a pyramid having a catalyst metal at the top, and (b) a substrate surface after injection of the catalyst metal.
FIG. 7 is a schematic perspective view illustrating a manufacturing process of the electron emission device of the present invention.
FIG. 8 is a schematic perspective view illustrating a manufacturing process of a probe of the scanning probe microscope of the present invention.
FIG. 9 is a cross-sectional view illustrating a source and drain manufacturing process of a three-terminal device using the fibrous carbon element of the present invention.
FIG. 10 is a cross-sectional view illustrating a manufacturing process of a gate of a three-terminal device using the fibrous carbon element of the present invention.
FIG. 11 is a schematic plan view showing a three-terminal device using the fibrous carbon element of the present invention.
FIG. 12 is a schematic perspective view illustrating a manufacturing process of a three-terminal device using the fibrous carbon element of the present invention.
FIG. 13 is a schematic perspective view showing an integrated circuit using the fibrous carbon element of the present invention.
[Explanation of symbols]
1 Substrate (base material)
2 Oxide film (protective film)
4 catalytic metal ions (catalytic elements)
5 fibrous carbon
21 Substrate (base material)
31 catalytic metal ion (catalytic element)
32 fibrous carbon

Claims (9)

A fiber characterized in that a catalyst element is injected into a predetermined position on the surface of a substrate by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method, and fibrous carbon is formed using the catalyst element as a catalyst. Method for controlling the shape and position of fibrous carbon. 2. The form of fibrous carbon according to claim 1, wherein a protective film for adjusting ions to be implanted to be located on the surface of the substrate is formed on the surface of the substrate before implanting the catalytic element. Position control method. A fibrous carbon element characterized in that one end is fixed to the position of a catalytic element whose position is controlled on the surface of a substrate by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. A fibrous carbon element characterized in that both ends are fixed to the position of a catalytic element whose position is controlled on the surface of a base material by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. In a device having an electron emitting portion capable of emitting electrons,
The electron-emitting portion is formed of a fibrous carbon element having one end fixed to a position of a catalytic element whose position is controlled on the substrate surface by any of an ion implantation method, a focused ion beam method, and a single ion implantation method. A device, characterized in that: In a device having a probe capable of detecting displacement,
The probe is formed of a fibrous carbon element having one end fixed to a position of a catalytic element whose position is controlled on the substrate surface by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. A device characterized by: In a device comprising a source for supplying a carrier, a drain for receiving the carrier, and a gate for controlling the current flowing through the channel by changing the conductivity of the channel, which is the current path between them.
The channel is formed of a fibrous carbon element having both ends fixed to the position of the catalytic element whose position is controlled in the source and the drain by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. Features device. In a device having a plurality of electronic elements and a wiring connecting the electronic elements,
The wiring is made of a fibrous carbon element having both ends fixed to the position of a catalytic element whose position is controlled by the electronic element by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. And the device. A plurality of electronic elements comprising a source for supplying a carrier, a drain for receiving the carrier, and a gate for controlling a current flowing through the channel by changing the conductivity of the channel, which is a current path between them; and And a wiring connecting the
The channel is formed of a fibrous carbon element whose both ends are fixed at the position of the catalytic element whose position is controlled in the source and the drain by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method,
The wiring is made of a fibrous carbon element having both ends fixed to the position of a catalytic element whose position is controlled by the electronic element by any one of an ion implantation method, a focused ion beam method, and a single ion implantation method. And the device.

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