JP2004247271A - Voltage sensing switch - Google Patents

Voltage sensing switch Download PDF

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Publication number
JP2004247271A
JP2004247271A JP2003072787A JP2003072787A JP2004247271A JP 2004247271 A JP2004247271 A JP 2004247271A JP 2003072787 A JP2003072787 A JP 2003072787A JP 2003072787 A JP2003072787 A JP 2003072787A JP 2004247271 A JP2004247271 A JP 2004247271A
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JP
Japan
Prior art keywords
voltage
zener diode
sensing switch
voltage sensing
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003072787A
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Japanese (ja)
Inventor
Shuzo Kushida
修三 串田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BIMETAL JAPAN KK
Original Assignee
BIMETAL JAPAN KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BIMETAL JAPAN KK filed Critical BIMETAL JAPAN KK
Priority to JP2003072787A priority Critical patent/JP2004247271A/en
Publication of JP2004247271A publication Critical patent/JP2004247271A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a small, light and inexpensive voltage sensing switch structure actuated by detecting a direct charge voltage and a fluctuating voltage in a voltage variation system, in an overcharge protecting device in a charging process of a rechargeable battery and the voltage variation system. <P>SOLUTION: This voltage sensing switch has a structure whereby a Zener diode 2 directly sensing a control voltage and a bimetallic disk 1 are directly or proximately combined to be thermally coupled, the bimetallic disk 1 is reversely actuated by heating of the Zener diode to establish a closed circuit with the control voltage, and a movable contact 5 provided at the tip of a movable arm 6 is pushed up to open an electric circuit. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
この発明は、リチャージャブルバッテリの充電過程に於ける過充電保護装置や、電圧変動システムに於いて、直接充電電圧やシステムの変動電圧を検知して動作する、小型,軽量で廉価な 電圧感知スイッチ構造に係る考案である。
【0002】
【従来の技術】
従来の過充電保護装置は、バッテリ充電の満充電時の温度を感知して動作するサーマルスイッチを介して充電回路を開とするサーマルスイッチ型保護装置や、満充電圧を電圧センサーで検出して制御回路で充電停止をする、電気制御回路型保護装置が一般的であった。
サーマルスイッチ型保護装置は、検出値が、満充電近辺のバッテリーケース温度の温度代用特性の為、直接電圧検知で無い事や、温度検出遅れ、バッテリーの種類に因っては満充電時の温度と電圧の相関関係が明確で無い等、保護精度が必ずしも十分で無い場合がある。
電気制御回路型保護装置は、保護精度は良いが、構成部品の関係で高価に成り必ずしも経済的で無く、現行保護装置は、それぞれの欠点を有する。
【0003】
【発明が解決しようとする課題】
従来の過充電保護装置及び電圧変動制御回路には次の様な欠点が有った。
(イ)、温度代用特性感知のサーマルスイッチ型保護装置は、電圧直接検知で無い事や、熱伝導遅れ等の関係で、制御電圧精度がが悪い。
(ロ)、電圧センサーと電気制御回路型装置は、構成制御部品が多く成り高価で経済的で無い。
(ハ)、負荷電流の流れない静電圧の検出制御が出来ない。
【0004】
【課題を解決する為の手段】
【図1】は、本考案の構造断面図と、その平面図である。
目的機能を満足する所定の温度設定が施されたバイメタルデスク(1)と、目的の電圧で閉動作して発熱するツエナーダイオード(2)を、薄く高熱伝導金属材料から成る 可動アーム(6)を介して密着させ、熱的結合させる。ツエナーダイオード(2)は、電気絶縁と高熱伝導機能及び接合機能を満足する薄い樹脂製のツエナーダイオードケース(3)にインサートモールドされる。可動アーム(6)の先端部分には、可動接点(5)を、固定ターミナル(11)の先端部には、固定接点(4)を付け、可動と固定接点を可動アーム(6)のバネ力で対応接触させる。固定ターミナル(11)は、絶縁物(10)にインサートモールドされる。絶縁物(10)には、関係する部品をカシメ結合する為のボスが設けられ、バイメタルデイスク(1),可動アーム(6),ツエナーダイオードケース(3)の順にそれぞれ部品に設けられた適合穴を通して密着カシメ結合される。結合された部品は、絶縁機能と保護機能を有するケース(7)に挿入され、シーリング(12)で密封固定される。
【0005】
【発明の実施の形態】
以下に本発明の実施形態を説明する。
本発明の構造図【図1】に於いて、電圧感知ターミナル(8)は、リチャージャブルバッテリー等、被制御電圧回路に接続される。回路制御ターミナル(9)は、充電器等の制御装置や、電圧表示装置等に接続される。リチャージャブルバッテリ等の被制御機器の電圧が、ツエナーダイオード(2)の設定動作電圧(ダイオード電圧)に達すると、ツエナーダイオード(2)は、閉状態に成り、同時にジュール熱で発熱する。ツエナーダイオード(2)に、薄く高熱伝導金属材料から成る可動アーム(6)を介して、密着接合されたバイメタルデスク(1)は、熱的結合に因り、所定温度に達すると反転動作し、可動アーム(6)を押し上げて可動接点(5)の接触を開き、回路制御ターミナル(9)に接続された電気回路を開とする。
【図2】使用例に示す様に、リチャージャブルバッテリ等、被制御機器の目的電圧で充電停止を自動的に行ったり、電圧表示等の制御を行う事が出来る。
【0006】
【発明の効果】
本発明を採用する事で、
(イ)、被制御装置の変動電圧を直接検知して、同時に直接制御回路を開閉出来る。
(ロ)、被制御電圧を直接検知出来る為、温度等の代用特性制御方式に対して、高精度の制御が可能と成る。
(ハ)、電圧検出のツエナーダイオード(2)と温度アクチュエーターのバイメタルデイスク(1)の熱的結合で、スイッチ形状を小型化,軽量化出来る。
(ニ)、構造が簡単で原価低減が出来て、経済的な電圧検知スイッチが出来る。
(ホ)、負荷電流の流れない静電圧の検出制御が出来る。
【図面の簡単な説明】
【図1】本発明の、構造断面と平面図である。
【図2】本発明品の使用例を表す説明図である。
【符号の説明】
1 バイメタルデイスク
2 ツエナーダイオード
3 ツエナーダイオードケース
4 固定接点
5 可動接点
6 可動アーム
7 ケース
8 電圧感知ターミナル
9 回路制御ターミナル
10 絶縁物
11 固定ターミナル
12 シーリング
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an overcharge protection device in the charging process of a rechargeable battery, and a small, lightweight and inexpensive voltage sensing switch structure which operates by directly detecting a charging voltage or a system fluctuation voltage in a voltage fluctuation system. It is a device according to.
[0002]
[Prior art]
Conventional overcharge protection devices detect the temperature of the battery when it is fully charged, open a charging circuit via a thermal switch that operates and operate the thermal switch, or detect the full charge pressure with a voltage sensor. An electric control circuit type protection device in which charging is stopped by a control circuit has been common.
The detection value of the thermal switch type protection device is not a direct voltage detection because the detected value is a temperature substitution characteristic of the battery case temperature near full charge, the temperature detection delay, and the temperature at full charge depends on the type of battery In some cases, the protection accuracy is not always sufficient, for example, the correlation between the voltage and the voltage is not clear.
Although the electric control circuit type protection device has good protection accuracy, it is expensive due to the components and is not necessarily economical, and the current protection devices have their respective disadvantages.
[0003]
[Problems to be solved by the invention]
Conventional overcharge protection devices and voltage fluctuation control circuits have the following disadvantages.
(A) The thermal switch type protection device that senses the temperature substitute characteristic has poor control voltage accuracy due to the fact that it is not a direct voltage detection and a delay in heat conduction.
(B) The voltage sensor and the electric control circuit type device are expensive and uneconomical due to the large number of constituent control parts.
(C) Detection and control of a static voltage where no load current flows cannot be performed.
[0004]
[Means for solving the problem]
FIG. 1 is a structural sectional view of the present invention and a plan view thereof.
A bimetal desk (1) having a predetermined temperature setting that satisfies a target function, a Zener diode (2) that generates heat by closing operation at a target voltage, and a movable arm (6) made of a thin and high heat conductive metal material. And thermal bonding. The Zener diode (2) is insert-molded in a thin resin-made Zener diode case (3) that satisfies the electrical insulation, high heat conduction function and bonding function. A movable contact (5) is attached to the tip of the movable arm (6), and a fixed contact (4) is attached to the tip of the fixed terminal (11). To make corresponding contact. The fixed terminal (11) is insert-molded on the insulator (10). The insulator (10) is provided with a boss for caulking and joining related components, and a corresponding hole provided in the component in the order of the bimetal disk (1), the movable arm (6), and the Zener diode case (3). Through crimping. The joined components are inserted into a case (7) having an insulation function and a protection function, and are hermetically fixed with a sealing (12).
[0005]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described.
In the structural diagram of the present invention (FIG. 1), a voltage sensing terminal (8) is connected to a controlled voltage circuit such as a rechargeable battery. The circuit control terminal (9) is connected to a control device such as a charger, a voltage display device, and the like. When the voltage of a controlled device such as a rechargeable battery reaches the set operating voltage (diode voltage) of the Zener diode (2), the Zener diode (2) is closed and simultaneously generates heat with Joule heat. The bimetal desk (1) closely bonded to the Zener diode (2) via a movable arm (6) made of a thin and highly heat-conductive metal material causes the bimetal desk (1) to perform an inversion operation when a predetermined temperature is reached due to thermal coupling. The arm (6) is pushed up to open the contact of the movable contact (5), and the electric circuit connected to the circuit control terminal (9) is opened.
FIG. 2 shows an example in which charging can be automatically stopped at a target voltage of a controlled device, such as a rechargeable battery, or control such as voltage display can be performed.
[0006]
【The invention's effect】
By adopting the present invention,
(A) The control circuit can be directly opened and closed simultaneously by directly detecting the fluctuating voltage of the controlled device.
(B) Since the controlled voltage can be directly detected, high-precision control can be performed for a substitute characteristic control method such as temperature.
(C) The switch shape can be reduced in size and weight by thermal coupling between the zener diode (2) for voltage detection and the bimetal disk (1) for the temperature actuator.
(D) The structure is simple, the cost can be reduced, and an economical voltage detection switch can be realized.
(E) Detection control of a static voltage in which no load current flows can be performed.
[Brief description of the drawings]
FIG. 1 is a structural cross section and a plan view of the present invention.
FIG. 2 is an explanatory diagram showing a usage example of the product of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Bimetal disk 2 Zener diode 3 Zener diode case 4 Fixed contact 5 Movable contact 6 Movable arm 7 Case 8 Voltage sensing terminal 9 Circuit control terminal 10 Insulator 11 Fixed terminal 12 Sealing

Claims (2)

【図1】は、本考案の構造断面図とその平面図を示す。
機能目的に応じ所定の温度に設定された バイメタルデイスク(1)と、目的電圧で閉動作するツエナーダイオード(2)を近接密着させて、ツエナーダイオード(2)の閉動作時に生じる熱をバイメタルデイスク(1)に熱的結合させてバイメタルデイスク(1)を反転動作させる構造。
FIG. 1 shows a sectional view of the structure of the present invention and a plan view thereof.
A bimetal disk (1) set at a predetermined temperature according to the purpose of the function and a zener diode (2) that closes at a target voltage are brought into close contact with each other to generate heat when the zener diode (2) closes. A structure in which the bimetal disk (1) is inverted by thermally coupling to (1).
請求項1の構造により、ツエナーダイオード(2)の閉動作時に発生する熱を感知して反転動作するバイメタルデイスク(1)に依り、開/閉 動作する電圧感知スイッチ機構。2. A voltage sensing switch mechanism that opens / closes by a bimetal disk (1) that senses heat generated during a closing operation of a Zener diode (2) and performs an inverting operation by the structure of claim 1.
JP2003072787A 2003-02-12 2003-02-12 Voltage sensing switch Pending JP2004247271A (en)

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Application Number Priority Date Filing Date Title
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GB2443261A (en) * 2006-10-26 2008-04-30 Starbridge Systems Ltd Wax micro actuator with semiconductor heating element
US8048041B2 (en) 2006-10-26 2011-11-01 Cellnovo, Ltd. Micro-valve
US10751478B2 (en) 2016-10-07 2020-08-25 Insulet Corporation Multi-stage delivery system
US10780217B2 (en) 2016-11-10 2020-09-22 Insulet Corporation Ratchet drive for on body delivery system
US10874803B2 (en) 2018-05-31 2020-12-29 Insulet Corporation Drug cartridge with drive system
US10973978B2 (en) 2017-08-03 2021-04-13 Insulet Corporation Fluid flow regulation arrangements for drug delivery devices
US11229741B2 (en) 2012-03-30 2022-01-25 Insulet Corporation Fluid delivery device, transcutaneous access tool and fluid drive mechanism for use therewith
US11229740B2 (en) 2017-03-07 2022-01-25 Insulet Corporation Very high volume user filled drug delivery device
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US8784403B2 (en) 2006-10-26 2014-07-22 Cellnovo, Ltd. Wax micro actuator
GB2443261A (en) * 2006-10-26 2008-04-30 Starbridge Systems Ltd Wax micro actuator with semiconductor heating element
GB2456681A (en) * 2006-10-26 2009-07-29 Starbridge Systems Ltd Therapeutic liquid pump with different valve actuation pressures
GB2456681B (en) * 2006-10-26 2009-11-11 Starbridge Systems Ltd Pump
US8048041B2 (en) 2006-10-26 2011-11-01 Cellnovo, Ltd. Micro-valve
AU2007310635B2 (en) * 2006-10-26 2014-01-16 Insulet Netherlands B.V. Wax micro actuator
GB2443261B (en) * 2006-10-26 2009-04-22 Starbridge Systems Ltd Wax micro actuator
US11229741B2 (en) 2012-03-30 2022-01-25 Insulet Corporation Fluid delivery device, transcutaneous access tool and fluid drive mechanism for use therewith
US11439765B2 (en) 2016-08-14 2022-09-13 Insulet Corporation Variable fill drug delivery device
US11497856B2 (en) 2016-08-14 2022-11-15 Insulet Corporation Drug delivery device with indicator
US10751478B2 (en) 2016-10-07 2020-08-25 Insulet Corporation Multi-stage delivery system
US10780217B2 (en) 2016-11-10 2020-09-22 Insulet Corporation Ratchet drive for on body delivery system
US11633541B2 (en) 2017-01-19 2023-04-25 Insulet Corporation Cartridge hold-up volume reduction
US11229740B2 (en) 2017-03-07 2022-01-25 Insulet Corporation Very high volume user filled drug delivery device
US10973978B2 (en) 2017-08-03 2021-04-13 Insulet Corporation Fluid flow regulation arrangements for drug delivery devices
US11280327B2 (en) 2017-08-03 2022-03-22 Insulet Corporation Micro piston pump
US11786668B2 (en) 2017-09-25 2023-10-17 Insulet Corporation Drug delivery devices, systems, and methods with force transfer elements
US10874803B2 (en) 2018-05-31 2020-12-29 Insulet Corporation Drug cartridge with drive system
US11229736B2 (en) 2018-06-06 2022-01-25 Insulet Corporation Linear shuttle pump for drug delivery
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US11369735B2 (en) 2019-11-05 2022-06-28 Insulet Corporation Component positioning of a linear shuttle pump

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