JP2004238649A - Method and apparatus for manufacturing member coated with carbon-based film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a member coated with a carbon-based film which realize supply of plasma of high density even to a surface of a recessed portion, and enable a condition for synthesizing a carbon film excellent in sliding characteristic to be adjusted. <P>SOLUTION: Plasma is generated by an external plasma source, and the pulse-shaped RF bias and the negative pulse-shaped DC bias voltage are simultaneously applied to a base material to be treated. The external plasma source is constituted of a plasma source capable of generating high density plasma and uniformly covering the periphery of the base material with the high density plasma. The power of the RF bias is adjusted so that its self bias voltage is from -0.05 kV to -1 kV, the duty ratio of the RF bias is set to be from 1% to 50%, the DC bias voltage is set to be from -1 kV to -10 kV, and the duty ratio of the DC bias voltage is set to be from 1% to 50%. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for manufacturing a carbon-based film-coated member applied to members requiring wear resistance, such as various sliding members, bearings of rotating devices, and information device storage devices.
[0002]
[Prior art]
A film forming technique using an ion beam is an effective method for synthesizing a non-equilibrium substance which is unstable at normal temperature and pressure by using energy of the ion beam. For example, cubic boron nitride (cBN), which is harder than diamond and more thermally stable than diamond, and diamond-like carbon (DLC), which has an amorphous structure but is hard and has excellent frictional properties, are exemplified. Can be These materials are expected to be applied to various sliding members, tools, and the like by utilizing characteristics such as wear resistance and high hardness. Very few of these members are composed of flat plates, and have a three-dimensional shape and a three-dimensionally complicated shape. However, when processing the surface of a three-dimensional or complex-shaped member by using a film forming technique using an ion beam, the film forming speed or the like is determined from the directivity of the ion beam and the irradiation angle of the ion beam on the processing member. Since the etching rates are different, it is very difficult to form a uniform film on a portion having a curvature. At present, rotation and oscillating motion of a mask and a work that can maintain a uniform film condition with respect to a processing member are indispensable. Therefore, processing time is long, processing cost is high, and productivity is poor.
[0003]
Regarding a film forming technique using an ion beam, a plasma based ion implantation (PBII) has been receiving attention as a film forming method capable of overcoming the above problems. This is a film formation method proposed by the United States in 1986. A negative pulse voltage is applied to a processing member immersed in plasma to uniformly process ions in the plasma existing around the processing member. This is a method of irradiating the member. For uniform processing (uniform irradiation of an ion beam) on the surface of a complex-shaped member by this method, it is desired to increase the density of the plasma and shorten the pulse bias.
[0004]
In addition, when a film is deposited on a processing member in a process in a reactive plasma related to a method of manufacturing a carbon-based film-coated member, the film is deposited while no pulse voltage is applied, and the properties of the film are entirely reduced. Has a great effect on the properties of the film. Generally, a film generated while no pulse voltage is applied is a mechanically weak film, and this is a serious problem when it is desired to obtain a hard film having more excellent mechanical characteristics such as friction characteristics. Therefore, the present inventors have proposed a method of manufacturing a hard carbon film-coated member having extremely excellent mechanical characteristics such as friction characteristics by simultaneously applying a pulse bias and a DC bias using an external plasma source as a plasma source. (Japanese Patent Application No. 2001-188637).
[0005]
In a technique using an external plasma source as a plasma source, it is difficult to uniformly supply plasma, particularly in a concave surface, and it is difficult to perform uniform processing with the current technology.
[0006]
On the other hand, the AIST Kansai Center and Chubu Sensor use the non-processed member itself as an antenna for generating plasma, such as applying a high frequency or positive pulse bias to the non-processed member, respectively. Has been proposed, which can supply plasma even in a concave surface, although the density is lower than the density required by calculation (see Patent Documents 1 and 2).
[0007]
[Patent Document 1]
JP 2001-26887 A (FIGS. 1 and 2)
[Patent Document 2]
JP 2001-207259A (FIGS. 1 and 2)
[0008]
[Problems to be solved by the invention]
However, in these methods, the density of the plasma covering the processing substrate is not sufficiently high, and the shape of the plasma sheath edge serving as an ion supply source when applying a bias voltage to the processing substrate does not conform to the processing shape. Generally, it is difficult to treat a substrate having a complicated shape possessed by a gear or a tool with sufficient uniformity.
[0009]
The present invention has been made in view of the above-mentioned problems, and is capable of supplying a high-density plasma even to a concave surface, and a condition under which a carbon-based film having excellent sliding characteristics can be synthesized. It is intended to provide a method and an apparatus for manufacturing a carbon-based film-coated member capable of adjusting the temperature.
[0010]
[Means for Solving the Problems]
A method of manufacturing a carbon-based film-coated member according to a first aspect of the present invention, which solves the above-described problems, generates plasma by an external plasma source, and applies a pulsed RF bias and a negative pulsed DC bias voltage to a processing substrate. Are simultaneously applied.
[0011]
The method for producing a carbon-based film-coated member of the second invention is the method for producing a carbon-based film-coated member of the first invention,
The external plasma source includes a plasma source capable of generating high-density plasma and capable of uniformly covering the periphery of the processing substrate with the high-density plasma. For example, the external plasma source includes an ECR plasma source, an RF plasma source, an ICP plasma source, a helicon wave plasma source, and a plasma source that can generate a higher density plasma than the RF plasma and can uniformly cover the periphery of the processing substrate. Is done.
[0012]
The method for producing a carbon-based membrane-coated member of the third invention is the method for producing a carbon-based membrane-coated member of the first or second invention,
The power of the pulsed RF bias applied to the processing substrate is adjusted such that the self-bias voltage applied to the processing substrate is from -0.05 kV to -1 kV.
[0013]
The method for producing a carbon-based film-coated member of the fourth invention is the method for producing a carbon-based film-coated member of the first, second or third invention,
A duty ratio of the pulsed RF bias applied to the processing member is set to 1% to 50%.
[0014]
The method for producing a carbon-based film-coated member of the fifth invention is the method for producing a carbon-based film-coated member of the first, second, third or fourth invention,
The pulse-like DC bias voltage applied to the processing substrate may be -1 kV to -10 kV.
[0015]
The method for producing a carbon-based membrane-coated member of the sixth invention is the method for producing a carbon-based membrane-coated member of the first, second, third, fourth or fifth invention,
A duty ratio of the pulsed DC bias voltage applied to the processing member is set to 1% to 50%.
[0016]
The apparatus for manufacturing a carbon-based film-coated member according to the seventh aspect of the present invention includes an external plasma source, RF pulse bias applying means for applying a pulsed RF bias, and DC pulse bias applying means for applying a pulsed DC bias voltage. A plasma is generated by the external plasma source, and a pulsed RF bias and a negative pulsed DC are applied to the processing substrate by the RF pulse bias applying means and the DC pulse bias applying means. The bias voltage and the bias voltage are applied simultaneously.
[0017]
An apparatus for manufacturing a carbon-based membrane-coated member according to an eighth aspect of the present invention is the apparatus for manufacturing a carbon-based membrane-coated member according to the seventh aspect,
The external plasma source includes a plasma source capable of generating high-density plasma and capable of uniformly covering the periphery of the processing substrate with the high-density plasma. For example, the external plasma source includes an ECR plasma source, an RF plasma source, an ICP plasma source, a helicon wave plasma source, and a plasma source that can generate a higher density plasma than the RF plasma and can uniformly cover the periphery of the processing substrate. Is done.
[0018]
Further, the manufacturing apparatus of the carbon-based film-coated member of the ninth invention is the manufacturing apparatus of the carbon-based film-coated member of the seventh or eighth invention,
Adjusting the power of the pulsed RF bias applied to the processing substrate by the RF pulse bias applying unit such that the self-bias voltage applied to the processing substrate is from -0.05 kV to -1 kV. It is characterized.
[0019]
Further, the apparatus for manufacturing a carbon-based membrane-coated member according to the tenth invention is the apparatus for manufacturing a carbon-based membrane-coated member according to the seventh, eighth, or ninth invention,
The duty ratio of the pulsed RF bias applied to the processing member by the RF pulse bias applying means is set to 1% to 50%.
[0020]
The manufacturing apparatus for a carbon-based membrane-coated member according to the eleventh invention is the manufacturing apparatus for a carbon-based membrane-coated member according to the seventh, eighth, ninth, or tenth aspect,
The pulsed DC bias voltage applied to the processing substrate by the DC pulse bias applying means is set to -1 kV to -10 kV.
[0021]
The apparatus for manufacturing a carbon-based membrane-coated member according to the twelfth invention is the apparatus for manufacturing a carbon-based membrane-coated member according to the seventh, eighth, ninth, tenth, or eleventh invention,
The duty ratio of the pulsed DC bias voltage applied to the processing member by the DC pulse bias applying means is set to 1% to 50%.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
The method and apparatus for producing a carbon-based film-coated member according to the present invention enable supply of high-density plasma not only to a convex surface but also to a concave surface, and provide a carbon-based film having excellent sliding characteristics. A manufacturing method and apparatus capable of adjusting conditions for synthesis.
In this method, a plasma is generated around the processing substrate by applying an RF bias to the processing substrate, and ions in the plasma are positively attracted by the self-bias, forming a film during a time when no pulse voltage is applied. While applying high-density plasma from an external plasma source to the substrate to be processed while preventing the formation of a mechanically weak film to be formed, ion irradiation is performed by applying a negative pulse bias to obtain a carbon-based material having excellent mechanical properties. This is a method for forming a film.
[0023]
Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG. FIG. 1 is a schematic view of an apparatus for manufacturing a carbon-based film-coated member according to an embodiment of the present invention.
[0024]
As shown in FIG. 1, the vacuum container 11 is evacuated from an exhaust hole 23 by a vacuum exhaust device (not shown), and has a substrate holder 13 in which a processing substrate 12 is installed. The substrate holder 13 is provided with a DC pulse bias power supply 15 as a DC pulse bias applying unit for applying a DC pulse bias through an insulated feedthrough 14, and an RF pulse bias as an RF pulse bias applying unit for applying an RF pulse bias. The power supply 17 is connected to a matching unit 16 for matching the DC pulse bias power supply 15 and the RF pulse bias power supply 17.
[0025]
The plasma 18 is obtained by introducing a reaction gas into the vacuum vessel 11 from a gas introduction pipe 19, introducing microwaves from a microwave power supply 21 to the vacuum vessel 11 through a waveguide 20, and processing the plasma 18 by an opposed electromagnetic coil 22. It is formed by an external plasma source that generates plasma by forming a magnetic field that most efficiently absorbs the microwaves introduced near the base material 12 and by applying an RF pulse bias from an RF pulse bias power supply 17. Similar effects can be obtained by using various plasma sources, such as high-frequency plasma, helicon wave plasma, and inductively coupled plasma, as the external plasma generation source.
[0026]
Next, a method for manufacturing a carbon-based film-coated member will be described with reference to FIG.
[0027]
First, the processing substrate 12 is placed on the substrate holder 13, and the vacuum vessel 11 is evacuated to a predetermined vacuum. Thereafter, a desired hydrocarbon-based source gas is introduced from the gas introduction pipe 19 and set to a desired pressure, and then a desired current is passed through the electromagnetic coil 22 to apply microwaves at a desired location in the vacuum vessel 11. Creates a magnetic field that can be efficiently absorbed. In this state, a microwave having a desired output is introduced into the vacuum chamber 11 from the microwave power supply 21 through the waveguide 20 to generate external plasma.
[0028]
Simultaneously with the generation of the external plasma, a plasma is further generated by applying a pulsed RF bias (RF pulse bias) from the RF pulse bias power supply 17 to the processing substrate 12 via the high insulation feedthrough 14. A DC pulse bias (pulse-like DC bias voltage) having a desired voltage and a duty ratio is applied from the DC pulse bias power supply 15 to the processing substrate 12 while matching with the RF bias by the matching unit 16. Through the above steps, a carbon-based film is produced on the surface of the processing substrate 12.
[0029]
Here, it is desirable to adjust the RF pulse bias applied from the RF pulse bias power supply 17 to the processing base material 12 so that the self-bias voltage becomes −0.05 kV to −1 kV. When the RF self-bias voltage applied to the processing base material 12 is -0.05 kV or less, the ion energy is low and there is no difference from the case where no RF pulse bias is applied, and there is no effect of applying the self-bias voltage. When the RF self-bias voltage is -2 kV or more, the film formation rate is significantly reduced due to the etching effect of the irradiated ions.
[0030]
At this time, it is desirable that the duty ratio of the RF pulse bias applied from the RF pulse bias power supply 17 to the processing substrate 12 be 1% to 50% so that the surface temperature of the processing substrate is 400 ° C. or less. Even if the processing base material 12 is cooled by water cooling or the like, the surface of the processing base material 12 becomes high temperature due to exposure to high-density plasma and application of excessive RF bias. At this time, if the temperature of the surface of the processing base material 12 becomes 400 ° C. or higher, the structure of the synthesized carbon-based film gradually changes and the mechanical properties deteriorate, so that the RF bias is pulsed to , It is desired to apply an RF bias at a duty ratio that can prevent an excessive rise in the surface temperature of the processing substrate 12.
[0031]
Further, it is desirable that the DC pulse bias (pulse voltage) applied to the processing member from the DC pulse bias power supply 15 is -1 kV to -10 kV. When the DC pulse bias applied to the processing substrate 12 is -1 kV or less, ions are not implanted into the film and are deposited on the surface, thereby modifying the carbon film deposited while the DC pulse bias is not applied. I can't do it. If the DC pulse bias is -10 kV or more, ions implanted into the carbon film deposited while the DC pulse bias is not applied penetrate, and thus the carbon film cannot be reformed effectively.
[0032]
Further, it is desirable that the duty ratio of the DC pulse bias applied from the DC pulse bias power supply 15 to the processing base material 12 be 1% to 50%. When the duty ratio of the DC pulse bias applied to the processing substrate 12 is 1% or less, ions necessary for modifying the carbon film deposited while the D pulse bias is not applied are insufficient. However, a sufficiently hard film cannot be obtained. On the other hand, if the duty ratio is 50% or more, the carbon film deposited while no DC pulse bias is applied is etched and the deposition rate is significantly reduced, and the film obtained by excessive ion irradiation becomes porous. There is a problem that a hard film cannot be obtained. Furthermore, abnormal discharge occurs between the processing substrate 12 and the vacuum vessel 11, and stable operation cannot be guaranteed.
[0033]
<Example>
An embodiment of the present invention will be described below in detail with reference to FIG.
[0034]
(Example 1)
First, the processing substrate 12 made of stainless steel (JIS: SUS304) was placed in the substrate holder 13, and the vacuum vessel 11 was evacuated to a vacuum of 1 × 10 ⁻³ Pa or less. Thereafter, methane was introduced as a source gas from the gas introduction pipe 19, and the pressure was controlled to 5 × 10 ⁻² Pa. Thereafter, a magnetic field (875 gauss) capable of efficiently absorbing microwaves was formed at a position 100 mm away from the center of the vacuum vessel 11 by passing a current of 300 A through the electromagnetic coil 22. In this state, a microwave (frequency: 2.45 GHz) having a power of 200 W was introduced from the microwave power supply 21 through the waveguide 20 into the vacuum chamber 11 to generate plasma. Simultaneously with the generation of the plasma, the RF pulse bias power supply 15 applies an RF pulse bias of 200 W and a duty ratio of 40% to the processing base material 12 via the high-insulation feedthrough 14, and the DC pulse bias power supply 17. A DC pulse bias (pulse voltage) having a voltage of −2 kV and a duty ratio of 1% was simultaneously applied to the treated base material 12 to produce a carbon film-coated member. At this time, the self-bias voltage due to the RF bias application was −100 V, and the sample surface temperature was 250 ° C.
[0035]
Structure of the resulting carbon film was examined by Raman spectrum analysis, and is detected broad peak consisting of the main peak and 1380 cm ^-1 vicinity of the shoulder band near 1520 cm ^-1, the diamond-like carbon film is a hard carbon film Synthesis was confirmed.
[0036]
Further, the friction characteristics of the obtained carbon film were examined using a ball-on-disk friction tester. The conditions of the friction test were a SiC ball as a mating material, a load of 1 N, a speed of 0.1 m / sec, an atmosphere in dry air, and a temperature of room temperature. As a result, the coefficient of friction was 0.4 for a carbon film manufactured without applying a bias bias, and 0.08 for a carbon film manufactured by applying only a DC pulse bias having a voltage of −2 kV and a duty ratio of 1%. On the other hand, the carbon film manufactured by simultaneously applying the above-described DC self-bias voltage of −100 V and −2 kV and a DC pulse bias having a duty ratio of 1% was greatly improved to 0.02. The carbon film produced by simultaneously applying the above-described DC pulse bias having the RF self-bias voltage of −100 V and −2 kV and the duty ratio of 1% does not peel off even in a friction test under a load of 20 N without a friction coefficient of 0.1. 02, and the adhesion and the durability were also significantly improved. It was confirmed that these characteristics were uniformly present on each of the uneven surfaces including the trench shape simulating a complicated shape.
[0037]
(Example 2)
First, the base material 12 made of high-speed tool steel (JIS: SKH51) was placed in the base material holder 13, and the vacuum vessel 11 was evacuated to a degree of vacuum of 1 × 10 ⁻³ Pa or less. Thereafter, methane and nitrogen were introduced as a source gas at a ratio of 1: 1 from the gas introduction pipe 19, and the pressure was controlled to 5 × 10 ⁻² Pa. Thereafter, a current of 250 A was passed through the electromagnetic coil 22 to form a magnetic field (875 gauss) capable of efficiently absorbing microwaves at a position 150 mm away from the center of the vacuum vessel 11. In this state, a microwave (frequency: 2.45 GHz) with a power of 700 W was introduced from the microwave power supply 21 through the waveguide 20 into the vacuum chamber 11 to generate plasma. Simultaneously with the generation of the plasma, an RF pulse bias having a power of 500 W and a duty ratio of 20% is applied from the RF pulse bias power supply 15 to the processing substrate 12 via the high insulation feedthrough 14 and the DC pulse bias power supply 17 is applied. By simultaneously applying a DC pulse bias having a voltage of -5 kV and a duty ratio of 10% to the processing substrate 12, a carbon film-coated member was manufactured. At this time, the self-bias voltage due to the application of the RF bias was −200 V, and the sample surface temperature was 350 ° C.
[0038]
The structure of the obtained film was examined using Raman spectrum analysis. As a result, the detected broad peak consisting of the main peak and 1380 cm ^-1 vicinity of the shoulder band near 1520 cm ^-1, synthetic membranes similar to diamond-like carbon film is a hard carbon film was confirmed. Further, when the composition and structure of the obtained film were examined by photoelectron spectroscopy, a bond between carbon and nitrogen in the film was confirmed, and it was confirmed that the film was a carbon nitride film containing 20% of nitrogen.
[0039]
Further, the friction characteristics of the obtained film were examined with a ball-on-disk friction tester. The conditions of the friction test were a SiC ball as a mating material, a load of 1 N, a speed of 0.1 m / sec, an atmosphere in dry air, and a temperature of room temperature. As a result, the coefficient of friction was 0.5 for a carbon film manufactured without applying a bias bias, and 0.09 for a carbon film manufactured by applying only a DC pulse bias having a voltage of −2 kV and a duty ratio of 1%. On the other hand, in the carbon film manufactured by simultaneously applying the above-described pulse voltage of the RF self-bias voltage of -200 V and -5 kV and the duty ratio of 10%, the value was greatly improved to 0.03. The carbon film manufactured by simultaneously applying the DC self-bias voltage of -200 V and -5 kV and the DC pulse bias having a duty ratio of 10% as described above does not peel off even in a friction test under a load of 20 N without a friction coefficient of 0.1. 03, indicating that the adhesion and durability were also significantly improved. It was confirmed that these characteristics were uniformly present on each of the uneven surfaces including the trench shape simulating a complicated shape.
[0040]
【The invention's effect】
As described above, according to the method and the apparatus for manufacturing a carbon-based film-coated member of the first to twelfth inventions, a carbon-based film having excellent friction characteristics can be adhered to a processing substrate having a complicated shape with good adhesion. Can be manufactured. Further, the method used in the present invention is a method capable of processing a member having a complicated shape in a film forming method using an ion beam, and therefore, it can be manufactured in a short time and at low cost as compared with a conventional manufacturing method. Can be. Therefore, it is possible to provide a method for producing a carbon-based film-coated member that contributes to improving the performance and life of industrial tools such as tools and bearings, engines, and space devices.
[0041]
According to the method and apparatus for manufacturing a carbon-based film-coated member of the third or ninth aspect, the power of the pulsed RF bias applied to the processing substrate is reduced by the self-bias voltage applied to the processing substrate to −0. By adjusting the voltage from 0.05 kV to -1 kV, the effect of applying the self-bias voltage can be reliably obtained, and the remarkable decrease in the film forming speed due to the ion etching effect can be prevented.
According to the method and the apparatus for manufacturing a carbon-based film-coated member of the fourth or tenth aspect, the duty ratio of the pulsed RF bias applied to the processing member is set to 1% to 50%, so that the processing base material is processed. An excessive rise in surface temperature can be reliably prevented.
According to the method and apparatus for manufacturing a carbon-based film-coated member of the fifth or eleventh aspect, the pulse voltage is applied by setting the pulsed DC bias voltage applied to the processing base material to -1 kV to -10 kV. Thus, the carbon-based film that is deposited while not in use can be reliably modified.
According to the method and apparatus for manufacturing a carbon-based film-coated member according to the sixth or twelfth aspect, the duty ratio of the pulsed DC bias voltage applied to the processing member is set to 1% to 50%, so that the member is sufficiently hard. Thus, a significant film can be obtained, and a remarkable decrease in the film formation rate due to etching can be prevented.
[Brief description of the drawings]
FIG. 1 is a schematic view of an apparatus for manufacturing a carbon-based film-coated member according to an embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 Vacuum container 12 Processing base material 13 Substrate holder 14 High insulation feedthrough 15 DC pulse bias power supply 16 Matching device 17 RF pulse bias power supply 18 Plasma 19 Gas introduction pipe 20 Waveguide 21 Microwave power supply 22 Electromagnetic coil 23 Exhaust hole

Claims (12)

A method for producing a carbon-based film-coated member, wherein plasma is generated by an external plasma source, and a pulsed RF bias and a negative pulsed DC bias voltage are simultaneously applied to a processing substrate. The method for producing a carbon-based membrane-coated member according to claim 1,
The external plasma source is capable of generating high-density plasma, and is constituted by a plasma source capable of uniformly covering the periphery of the processing substrate by the high-density plasma. Production method. The method for producing a carbon-based membrane-coated member according to claim 1 or 2,
Wherein the power of the pulsed RF bias applied to the processing substrate is adjusted such that a self-bias voltage applied to the processing substrate is from -0.05 kV to -1 kV. A method for manufacturing a covering member. The method for producing a carbon-based membrane-coated member according to claim 1, 2, or 3,
A method for manufacturing a carbon-based film-coated member, wherein a duty ratio of the pulsed RF bias applied to the processing member is 1% to 50%. The method for producing a carbon-based membrane-coated member according to claim 1, 2, 3, or 4,
A method for producing a carbon-based film-coated member, wherein the pulse-like DC bias voltage applied to the treatment substrate is set to -1 kV to -10 kV. The method for producing a carbon-based membrane-coated member according to claim 1, 2, 3, 4, or 5,
A method for manufacturing a carbon-based film-coated member, wherein a duty ratio of the pulsed DC bias voltage applied to the processing member is 1% to 50%. An external plasma source, an RF pulse bias applying unit for applying a pulsed RF bias, and a DC pulse bias applying unit for applying a pulsed DC bias voltage, wherein the plasma is generated by the external plasma source; A pulsed RF bias and a negative pulsed DC bias voltage are simultaneously applied to the substrate by the RF pulse bias applying means and the DC pulse bias applying means. Equipment for manufacturing carbon-based membrane-coated members. The apparatus for producing a carbon-based membrane-coated member according to claim 7,
The external plasma source is capable of generating high-density plasma, and is constituted by a plasma source capable of uniformly covering the periphery of the processing substrate by the high-density plasma. manufacturing device. An apparatus for manufacturing a carbon-based membrane-coated member according to claim 7 or 8,
Adjusting the power of the pulsed RF bias applied to the processing substrate by the RF pulse bias applying unit such that the self-bias voltage applied to the processing substrate is from -0.05 kV to -1 kV. An apparatus for producing a carbon-based membrane-coated member, characterized by: An apparatus for manufacturing a carbon-based membrane-coated member according to claim 7, 8, or 9,
An apparatus for manufacturing a carbon-based film-coated member, wherein a duty ratio of the pulsed RF bias applied to the processing member by the RF pulse bias applying unit is set to 1% to 50%. An apparatus for manufacturing a carbon-based membrane-coated member according to claim 7, 8, 9, or 10,
An apparatus for manufacturing a carbon-based film-coated member, wherein the pulsed DC bias voltage applied to the processing substrate by the DC pulse bias applying means is set to -1 kV to -10 kV. The apparatus for producing a carbon-based membrane-coated member according to claim 7, 8, 9, 10, or 11,
An apparatus for manufacturing a carbon-based film-coated member, wherein a duty ratio of the pulsed DC bias voltage applied to the processing member by the DC pulse bias applying means is set to 1% to 50%.

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