JP2003249443A - Stage apparatus, stage position-controlling method, exposure method and projection aligner, and device- manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the position controllability of a stage without increasing the manufacturing costs of an apparatus. <P>SOLUTION: When there are a plurality of wafer stages (WST1, WST2) in a first specific region SA1 and second specific regions (SA2a, SA2b), positions in respective stages are measured by interferometers (40X<SB>1</SB>to 40Y<SB>3</SB>), and the positions in respective stages are measured by linear encoders (ENC1, ENC2) within a specific range containing a fixed region where respective stages exist in a section for moving among respective regions and at the same time the positions cannot be measured by the interferometers. More specifically, the interferometers are used together with the encoders without, for example increasing the number of length-measuring beams in the interferometer and lengthening a reflection surface that is illuminated with the length-measuring beams, thus continuously measuring the positions in the movement region of respective stages, and hence improving the position controllability of the stages without increasing the manufacturing costs of an apparatus. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stage device, a stage position management method, an exposure method and an exposure apparatus, and a device manufacturing method, and more specifically, a first specific region and a second process in which a first process is performed. A stage device having a plurality of stages respectively moving in respective moving areas including a second specific area, a position management method for managing the positions of the plurality of stages, an exposure method using the position management method, And an exposure apparatus having the plurality of stages, and a device manufacturing method using the exposure method.

[0002]

2. Description of the Related Art Conventionally, in a lithography process for manufacturing a semiconductor device, a liquid crystal display device, etc., a pattern formed on a mask or reticle (hereinafter referred to as "reticle") is resisted through a projection optical system. A substrate such as a wafer or a glass plate coated with the like (hereinafter, "wafer")
(Hereinafter collectively referred to as an “exposure device”).

In recent years, as a projection exposure apparatus of this type, a step
A successive movement type projection exposure apparatus such as a reduction projection exposure apparatus of the and repeat type (so-called stepper) or a scanning type exposure apparatus of the step and scan type (so-called scanning stepper) is mainly used.

A stepper or the like is provided with a wafer stage on which a wafer is placed. The wafer stage is moved below the projection optical system to perform exposure, or the wafer stage is provided separately from the projection optical system. Wafer alignment is carried out by moving to the lower part of the system and detecting alignment marks formed on the wafer. In the conventional exposure apparatus, when the exposure operation for a wafer is completed, wafer exchange, wafer alignment are sequentially performed, then exposure is performed, and then wafer exchange is performed again. It was repeated. Therefore, the time required for wafer exchange and alignment (hereinafter, appropriately referred to as “overhead time”) has been a cause of reducing the throughput of the apparatus.

In order to improve such inconvenience, a plurality of wafer stages are prepared, and during exposure of a wafer on one wafer stage, wafer exchange and wafer alignment are performed on another wafer stage to improve throughput by simultaneous parallel processing. Many multi-stage type exposure apparatuses have been proposed (for example, Japanese Patent Laid-Open No. 8-510).
69 and WO98 / 24115, etc.).
In the case of such a multi-stage type exposure apparatus, as in the case of the single stage type exposure apparatus, the position of the wafer stage is measured with high accuracy using a laser interferometer.

[0006]

In a multi-stage type exposure apparatus, a wafer stage on which a wafer is exposed and a wafer stage on which wafer exchange and wafer alignment are performed do not interfere with each other. There is a need to. Therefore, it is necessary to increase the distance between the projection optical system and the alignment system to some extent.

In this case, the position of the wafer stage is interfered by laser interference within the moving area of the wafer stage including the movement between the exposure position (the position below the projection optical system) and the alignment position (the position below the alignment system). In order to always manage with a meter, it is necessary to always irradiate the measuring beam from the laser interferometer onto the reflecting surface of the moving mirror provided on the stage. As a method for this, it is necessary to increase the length of the movable mirror or provide a large number of long axes for interference measurement.

However, in the former case, the wafer stage inevitably becomes large in size, the position controllability of the wafer stage deteriorates, and the manufacturing cost of the movable mirror increases. On the other hand, in the latter case, there is a disadvantage that the manufacturing cost of the exposure apparatus inevitably increases.

The present invention has been made under such circumstances, and a first object thereof is to provide a stage device and a stage position management method capable of improving the positioning accuracy of the stage without increasing the cost. To provide.

A second object of the present invention is to provide an exposure method and an exposure apparatus capable of transferring a pattern onto a substrate with high accuracy.

A third object of the present invention is to provide a device manufacturing method which contributes to improvement in productivity of highly integrated microdevices.

[0012]

A stage apparatus according to claim 1 is a first specific area (SA) in which a first process is performed.
1) and a stage device having a plurality of stages (WST1, WST2) respectively moving in respective moving areas including a second specific area (SA2a, SA2b) in which a second process different from the first process is performed. Then, when each of the stages is at least in the first specific region and the second specific region, the measurement beam is irradiated to the reflecting surface provided in each stage to measure the position of each stage. First position measuring device (40
X ₁ , 40X ₂ , 40Y _{1 to} 40Y ₃ ); and of each of the stages by the first position measuring device in a section in which each of the stages moves between the first specific region and the second specific region. A second position measuring device (ENC1, which measures the position of each stage by a method different from that of the first position measuring device when the position is in a predetermined range including at least a predetermined partial area where position measurement is impossible) ENC2); and other stages of the plurality of stages during a first movement for moving a predetermined stage of the plurality of stages from the first specific region toward the second specific region. A movement control device (19, 20) for controlling the movement of the plurality of stages so as to perform a second movement for moving the second specific area from the second specific area toward the first specific area; Move and before In at least part of the period and the second movement is performed in parallel, characterized by measuring the time in both stages the second position measuring device, respectively.

According to this, when each stage is at least in the first specific region in which the first process is performed and in the second specific region in which the second process is performed, the reflecting surface is irradiated with the measuring beam to measure the position. The position of each stage is measured by the first position measuring device. In addition, a predetermined range including at least a predetermined partial area in which the position of each stage cannot be measured by the first position measuring device in a section in which each stage moves between the first specific area and the second specific area. When in the range, the position of each stage is measured by the second position measuring device that measures the position by a method different from that of the first position measuring device. Further, the movement control device causes the other stage of the plurality of stages to move during the first movement for moving the predetermined stage of the plurality of stages from the first specific region toward the second specific region. The movement of the plurality of stages is controlled so as to perform the second movement that moves the second specific area toward the first specific area. And
Under the control of the movement control device, the positions of both stages are simultaneously measured by the second position measurement device during at least a part of the period in which the first movement and the second movement are performed in parallel. That is, when the first position measurement device cannot measure the positions of both stages when the first movement is performed on a predetermined stage and the second movement is performed on another stage in parallel with this. Even so, in the present invention, by using the first position measuring device and the second position measuring device together,
For example, it is possible to constantly measure the position of each stage within the moving area of each stage without increasing the number of length measuring beams or increasing the length of the reflecting surface irradiated by the length measuring beams. Becomes Therefore, the position controllability of the stage can be improved without increasing the manufacturing cost of the device. In this case, since the length of the reflecting surface can be minimized, the flatness of the reflecting surface is increased and the position controllability of the stage can be further improved.

In this case, as in the stage device according to claim 2, a control device for switching the first and second position measuring devices used for measuring the position of each stage according to the position of each stage ( 20) can be further provided.

In this case, as in the stage device according to the third aspect, the control device controls the first stage in a section in which the stages move between the first specific region and the second specific region. In the section where the position measurement of each of the stages cannot be performed by the position measurement device, the position of the stage in the measurement direction of the second position measurement device is kept constant based on the measurement value of the second position measurement device. It may be done.

In each of the stage devices described in claims 1 to 3, various devices can be used as the second position measuring device, but as in the stage device described in claim 4, the second device is used. The position measuring device can be a linear encoder, a hall sensor, or a capacitance sensor.

In the stage apparatus according to any one of claims 1 to 4, like the stage apparatus according to claim 5, the respective stages are movable independently of each other along a two-dimensional plane. can do.

In each of the stage devices described in claims 1 to 5, as in the stage device described in claim 6, the first specific region can be shared by the plurality of stages.

In this case, as in the stage device according to claim 7, the second specific region may be shared by the plurality of stages.
The second specific region may be individually provided for each of the plurality of stages, as in the stage device described in (1).

In each of the stage devices described in claims 1 to 8, like the stage device described in claim 9, a third process different from the first and second processes in the middle of the first movement. After performing the third process in the third specific region via the third specific region where
It is possible to move toward the second specific area.

According to a tenth aspect of the present invention, there is provided a stage position management method, wherein each moving region includes a first specific region in which the first process is performed and a second specific region in which a second process different from the first process is performed. A stage position management method for managing the positions of a plurality of stages respectively moving inside, wherein reflection provided on each stage when each stage is at least in the first specific region and the second specific region A first step of irradiating a surface with a measuring beam to measure the position of each of the stages, and managing the position of each of the stages based on the measurement result; and each of the stages including the first specific region and the first specific region. When the length measurement beam does not hit the reflecting surface of each stage in the section moving between the two specific regions, the position of each stage is different from that in the first step. A second step of measuring by a method and managing the position of each of the stages based on the measurement result; and moving a predetermined stage of the plurality of stages from the first specific region toward the second specific region. Movement of the plurality of stages so as to perform a second movement of moving the other stage of the plurality of stages from the second specific region toward the first specific region during the first moving of the plurality of stages. And at least a part of the period in which the first movement and the second movement are performed in parallel, a third step of simultaneously measuring the both stages by the different methods is included. This is a characteristic stage position management method.

According to this, when each stage is at least in the first specific region in which the first process is performed and in the second specific region in which the second process is performed, the measurement beam is applied to the reflecting surface provided in each stage. Irradiation is performed to measure the position of each stage, and the position of each stage is managed based on the measurement result. Then, during the first movement of moving a predetermined stage of the plurality of stages from the first specific region to the second specific region, another stage of the plurality of stages is moved from the second specific region. A plurality of stages are moved so as to perform a second movement to move toward the first specific area, and both stages are performed in at least a part of a period in which the first movement and the second movement are performed in parallel. Are measured simultaneously by different methods. That is, when the first movement is performed on the predetermined stage and the second movement is performed on the other stages in parallel with this, the measurement beam does not strike the reflecting surface of each stage, and the position of each stage is changed. Even when it is not possible to measure the position of each stage at all times, by measuring the position of each stage by a method different from the first process and managing the position of each stage based on the measurement result, It is possible to manage the position of the stage without increasing the number of axes) or lengthening the length of the reflecting surface irradiated with the measuring beam. As a result, the position controllability of the stage can be improved with almost no increase in cost.

In this case, as in the stage position management method according to the eleventh aspect, the first and second steps can be selectively executed depending on the position of each stage.

In this case, as in the position management method according to the twelfth aspect, based on the position measurement result of each stage in the second step, the fourth position maintaining constant position in the measurement direction of each stage. The method may further include steps.

In each stage position management method described in claims 10 to 12, in the second step, as in the position management method described in claim 13, any one of a linear encoder, a hall sensor, and a capacitance sensor is used. Can be used to measure the position of each stage.

In the stage position management method according to any one of claims 10 to 13, as in the position management method according to claim 14, the respective stages are movable independently of each other along a two-dimensional plane. It can be.

In each of the stage position management methods described in any one of claims 10 to 14, as in the position management method according to claim 15, the first specific area is also used in the plurality of stages. You can

In this case, as in the position management method described in claim 16, the second specific area may be shared by the plurality of stages. In the position management method according to claim 17, As described above, the second specific region may be individually provided for each of the plurality of stages.

The invention according to claim 18 is an exposure method for transferring a pattern formed on a mask onto a substrate through a projection optical system, and the invention according to any one of claims 10 to 17 The stage position management method is used to manage the stage position, information about the position of the substrate is measured in the second specific region, and the second position is measured based on the information about the position of the substrate measured in the second specific region. The exposure method is characterized in that the pattern is transferred in one specific region.

According to this, the stage position is managed by using the stage position management method according to any one of claims 10 to 17, the information on the position of the substrate is measured in the second specific region, and the second position is measured. The pattern is transferred in the first specific area based on the information about the position of the substrate measured in the specific area. Therefore, the measurement of the information on the position of the substrate and the transfer of the pattern are performed in a state where the position controllability of the stage is improved, so that it is possible to improve the exposure accuracy.

In this case, as in the exposure method according to the nineteenth aspect, the predetermined stage is subjected to a third process for exchanging a substrate placed on the stage during the first movement. It is possible to move toward the second specific area after performing the third process in the third specific area via the third specific area.

The invention described in claim 20 is a device manufacturing method characterized in that the device pattern formed on a mask is transferred onto a substrate by using the exposure method according to claim 18 or 19.

An exposure apparatus according to a twenty-first aspect is an exposure apparatus which transfers a pattern of a mask (R) onto a substrate (W) via a projection optical system (PL), and detects a mark on the substrate. At least one mark detection system (ALG
1, ALG2); and the respective moving regions including the first specific region below the projection optical system and the second specific region below the mark detection system, each of which holds the substrate independently and A first stage (WST1) and a second stage (WST2) that move dimensionally; and when the respective stages are at least in the first specific region and the second specific region, the reflection surface provided on each stage is measured. First to irradiate a long beam to measure the position of each stage
Position measuring device (40X ₁ , 40X ₂ , 40Y ₁ to 40
Y ₃ ); and a predetermined one in which the position measurement of each stage by the first position measuring device becomes impossible in a section in which each stage moves between the first specific region and the second specific region. When within a predetermined range including at least a partial area,
A second position measuring device (ENC1, E2) for measuring the position of each stage by a method different from that of the first position measuring device.
NC2); and, during the first movement for moving the first stage from the first specific region toward the second specific region, moving the second stage from the second specific region to the first specific region. A movement control device (1) for controlling movement of the plurality of stages so as to perform a second movement to move the stage toward
9 and 20); and at least a part of the period in which the first movement and the second movement are performed in parallel, the both positions are simultaneously measured by the second position measuring device. The exposure apparatus is characterized in that

According to this, the first stage and the second stage, which respectively hold the substrate and move two-dimensionally independently, are marks for detecting at least the first specific region below the projection optical system and the mark on the substrate. When in the second specific region below the detection system, the position measurement of each stage is performed by the first position measurement device that irradiates the measurement beam on the reflection surface provided on each stage to measure the position. In addition, a predetermined range including at least a predetermined partial area in which the position measurement of each stage cannot be performed by the first position measuring device in a section in which each stage moves between the first specific area and the second specific area. In the case of, the position measurement of each stage is performed by the second position measurement device that measures by a method different from that of the first position measurement device. Further, the movement control device causes the second stage to move from the second specific area to the first specific area during the first movement for moving the first stage from the first specific area to the second specific area. The movement of the plurality of stages is controlled so as to perform the second movement of moving the stage. Then, under the control of the movement control device, the first movement and the second movement are performed.
The positions of the both stages are simultaneously measured by the second position measuring device in at least a part of the period in which the movement of the stage is performed in parallel. In other words, when the first position measurement device cannot measure the positions of both stages when the first movement is performed on the first stage and the second movement is performed on the second stage in parallel with the first movement. Even if there is, by using the first position measuring device and the second position measuring device together, the number of length measuring beams is increased or the length of the reflecting surface irradiated with the length measuring beam is increased. Without this, it becomes possible to constantly measure the position of each stage within the moving area. Therefore, it is possible to improve the position controllability of the stage with almost no increase in manufacturing cost, and it is possible to improve the exposure accuracy. In this case, since the length of the reflecting surface can be minimized, the flatness of the reflecting surface can be further increased due to the ease of processing, and in this respect also, the position controllability of the stage can be improved. You can

In this case, the exposure apparatus according to the twenty-second aspect further includes a control device (20) for switching the measuring device used for measuring the position of each stage according to the moving position of each stage. can do.

In each of the above-mentioned exposure apparatuses according to claims 21 and 22, as in the exposure apparatus according to claim 23, the mark detection systems are arranged at positions opposite to each other with respect to the projection optical system. First mark detection system (A
LG1) and a second mark detection system (ALG2) are provided, and the first stage includes the first specific area and the first specific area.
The second stage moves within a region including a second specific region below the mark detection system, and the second stage moves within a region including the first specific region and a second specific region below the second mark detection system. It is good to move.

In this case, as in the exposure apparatus according to the twenty-fourth aspect, the detection centers of the first and second mark detection systems are positioned symmetrically with respect to the projection center of the projection optical system. Can be located at.

In each of the above-mentioned exposure apparatuses according to claims 21 and 22, as in the exposure apparatus according to claim 25, as the mark detection system, only a single mark detection system is provided, and the first stage and Each of the second stages can move within a region including the first specific region and a common second specific region below the mark detection system.

In this case, as in the exposure apparatus according to the twenty-sixth aspect, the axis that passes through the projection center of the projection optical system and the detection center of the mark detection system is set by the first position measuring device to the respective axes. 28. The projection optical system may be parallel to any one of the first axis direction for measuring the position of the stage and the second axis direction orthogonal to the first axis direction. The axis passing through the projection center of and the detection center of the mark detection system is
It may not be parallel to any measurement axis in the first axis direction for measuring the position of each stage and the second axis direction orthogonal to the first axis direction.

In each of the exposure apparatuses described in claims 21 to 27, as in the exposure apparatus described in claim 28, the first stage is placed on the stage during the first movement. It is possible to move further toward the second specific region after the substrate replacement operation is performed in the third specific region via the third specific region for exchanging the substrate.

An exposure apparatus according to a twenty-ninth aspect is an exposure apparatus for transferring a mask pattern onto a substrate via a projection optical system, and a mark detection system for detecting a mark on the substrate; the projection optical system. A first stage and a second stage that independently and two-dimensionally move while holding the substrates in respective moving regions including a first specific region below the system and a second specific region below the mark detection system. A position measuring device for irradiating a reflecting surface provided on each of the stages with a measuring beam to measure the position of each of the stages; and a projection center of the projection optical system and a mark detection system. An axis passing through the detection center is not parallel to any measurement axis in the first axis direction in which the position measuring device measures the position of each of the stages and the second axis direction orthogonal to the first axis direction.

According to this, the first specific region and the second specific region are not parallel to both the first and second axial directions which are the measuring directions of the position measuring device (they are oblique to each axial direction). Therefore, the distance between the projection center and the detection center in the first and second axis directions can be shortened as compared with the case where each region is arranged parallel to any axis. That is, it is possible to improve the footprint of the exposure apparatus. Also,
Since the measurement axes during the exposure operation and the alignment operation can be in the same direction, for example, the position control of each stage can be performed without increasing the number of reflecting surfaces provided on the stage or the number of measurement beams of the position measuring device. Therefore, the manufacturing cost can be reduced.

The invention described in Item 30 is based on the optical system (P
L) is an exposure apparatus that forms a predetermined pattern on a substrate via a first member (84) that is movable in the first axis direction.
X); and is installed separately from the first member in the second axial direction orthogonal to the first axial direction in a plane orthogonal to the optical axis of the optical system with respect to the first member, and is movable in the first axial direction. Second member (8
5X); and a third member (272Y) that moves in the first axial direction with the movement of the first member and is movable in the second axial direction with respect to the first member; While moving in the direction of the first axis with the movement of the member,
A fourth movable member in the second axial direction with respect to the second member.
A member (274Y); a first stage (WST) connected to the third member and holding a substrate (W1) near an end of the third member on the side of the second member in the second axis direction.
1) and; a second stage (WST2) that holds the substrate (W2) and is connected to the fourth member near the end of the fourth member on the first member side in the second axis direction; Each of the first stage and the second stage is movable in a moving region including a first specific region including a lower portion of the optical system and a second specific region different from the first specific region. The exposure apparatus is characterized in that

According to this, the first stage can move in the second axial direction as the third member moves in the second axial direction with respect to the first member, and the first member can move in the first axial direction. It can move in the first axis direction as it moves in the first axis direction. The second stage is movable in the second axial direction as the fourth member moves in the second axial direction with respect to the second member, and the second member moves in the first axial direction. Can move in the direction of the first axis. That is, the first and second stages are movable in the two-dimensional plane. In this case, each of the first stage and the second stage includes a first specific region including the lower part of the optical system (a stage moving region when a pattern is formed on the substrate via the optical system) and the first specific region. Each of them can be moved within a moving area including a second specific area (a moving area of the stage when alignment is performed by the alignment system ALG or when a wafer is exchanged) different from the one specific area.
Therefore, in the exposure apparatus of the present invention, the first and second stages can move in the moving area including the first and second specific areas regardless of the arrangement of the first specific area and the second specific area. The flexibility of the arrangement of the first specific area and the second specific area is improved, and the footprint can be narrowed by devising the arrangement.

In this case, as in the exposure apparatus according to the thirty-first aspect, when each of the first stage and the second stage moves between the first specific area and the second specific area. It is possible to move at least in the first axial direction together with a specific member to which each of the third member and the fourth member is connected.

In each of the exposure apparatuses described in claims 30 and 31, as in the exposure apparatus described in claim 32, at least one of the first stage and the second stage moves with respect to the specific member. It can be connected as possible. In this case, at least one of the first stage and the second stage has at least one direction of the three degrees of freedom in the two-dimensional plane including the first axis and the second axis for the specific member, or the two-dimensional direction. Third orthogonal to the plane
It may be movable in at least one of the three degrees of freedom of the axial direction and the tilt direction, or may be movable in at least any two degrees of freedom of the above six degrees of freedom. .

[0047]

BEST MODE FOR CARRYING OUT THE INVENTION << First Embodiment >> An exposure apparatus according to a first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 shows a schematic configuration of an exposure apparatus 10 according to the first embodiment. This exposure apparatus 1
Reference numeral 0 denotes a step-and-scan type scanning exposure apparatus, that is, a so-called scanning stepper.

The exposure apparatus 10 includes a light source and an illumination optical system, which are not shown, and illuminates the reticle R from above with the illumination light for exposure. The illumination system IOP and the reticle R are mainly in a predetermined scanning direction (Y-axis direction (see FIG. 1 direction orthogonal to the paper surface))
A reticle drive system that is driven below, a projection optical system PL that is disposed below the reticle R, and a wafer W1 and a wafer W2 that are disposed below the projection optical system PL and that are two-dimensional independent by holding them. A stage device 30 including a wafer stage WST1 as a first stage, a wafer stage WST2 as a second stage, and the like that move on a plane (XY plane) is provided.

As the light source, an ArF excimer laser (output wavelength 193 nm) is used here. A pulsed laser light source that outputs pulsed ultraviolet light in the vacuum ultraviolet region, such as an F ₂ laser (output wavelength 157 nm), or Kr
A pulsed laser light source that outputs pulsed ultraviolet light in the far ultraviolet region such as an F excimer laser (output wavelength 248 nm) may be used as the light source.

The light source is controlled by the laser controller 18 (see FIG. 4) whose pulse repetition frequency (oscillation frequency) and pulse energy are under the control of the main controller 20 (see FIG. 4) as a controller. It is controlled.

The illumination optical system is an optical integrator (fly-eye lens or rod type (internal reflection type)).
(Eg, an integrator), a condenser lens system, a reticle blind, and an imaging lens system (all are not shown), and illuminates a rectangular (or arc-shaped) illumination area on the reticle R with uniform illuminance. As the illumination optical system, one having the same configuration as that disclosed in, for example, Japanese Patent Laid-Open No. 9-400956 is used.

The reticle drive system holds the reticle R and is movable along the reticle stage base 32 shown in FIG. 1 in the XY two-dimensional plane.
A reticle drive unit 26 including a linear motor (not shown) for driving the reticle stage RST, and a reticle interferometer system 36 for managing the position of the reticle stage RST.

The reticle stage RST is actually a reticle coarse movement stage which moves along the upper surface of the reticle stage base 32 in the Y-axis direction within a predetermined stroke range.
The reticle fine movement stage is configured to be finely movable in the X-axis direction, the Y-axis direction, and the θz direction (rotational direction around the Z-axis) with respect to the reticle coarse movement stage. The reticle R is suction-held on the reticle fine movement stage via an electrostatic chuck or a vacuum chuck (not shown).

The reticle drive unit 26 is actually a linear motor for driving the reticle coarse movement stage in the Y-axis direction, a voice coil motor for driving the reticle fine movement stage in the three degrees of freedom of X, Y and θz. It is configured to include.

As described above, reticle stage RST
Is actually composed of two stages. However, in the following, for convenience, the reticle stage RST will be described as follows. Will be described as a single stage that is driven by scanning. The reticle drive unit 26 includes a linear motor, a voice coil motor, and the like, but is shown as a simple block in FIGS. 1 and 4 for convenience of illustration.

The position and amount of rotation of reticle stage RST are determined by moving mirror 34 fixed on reticle stage RST.
Is measured by a reticle interferometer system 36 fixed on the reticle stage base 32 via the reticle interferometer system 36.
9 (not shown in FIG. 1, see FIG. 4) and the main controller 20 (not shown in FIG. 1, see FIG. 4) via this.

The projection optical system PL is telecentric on both the object plane side (reticle side) and the image plane side (wafer side), and for example, a reduction system with a 1/4 (or 1/5) reduction magnification is used. There is. Therefore, when the reticle R is irradiated with illumination light (ultraviolet pulsed light) from the illumination system IOP, the reticle R
The imaging light flux from the portion of the circuit pattern area formed above illuminated by the ultraviolet pulse light is projected onto the projection optical system P.
A partial inverted image of the circuit pattern incident on L is confined to a slit shape or a rectangular shape (polygonal shape) in the center of the visual field on the image plane side of the projection optical system PL for each pulse irradiation of the ultraviolet pulsed light. To be imaged. As a result, the projected partial inverted image of the circuit pattern is reduced and transferred to the resist layer on the surface of one shot area of the plurality of shot areas on the wafer W arranged on the image plane of the projection optical system PL.

The projection optical system PL uses Ar as a light source.
When an F excimer laser or a KrF excimer laser is used, a refraction system consisting of only a refraction optical element (lens element) is mainly used, but when an F ₂ laser light source or the like is used, for example, Japanese Patent Application Laid-Open No. 3-2852727 A so-called catadioptric system (catadioptric system) in which a refractive optical element and a reflective optical element (such as a concave mirror or a beam splitter) are combined, or a reflective optical system including only a reflective optical element, as disclosed in the publication, is mainly used. Used. However, it is possible to use a refraction system when using the F ₂ laser light source.

The stage device 30 includes a wafer stage base 12 supported substantially horizontally above the floor surface F via at least three vibration isolation units 53, and in the non-scanning direction along the upper surface of the wafer stage base 12. Two wafer stages W which are two-dimensionally moved independently in a certain X-axis direction (left-right direction on the paper surface in FIG. 1) and in a Y-axis direction which is a scanning direction.
ST1, WST2, and these wafer stages WST
1 and WST2 are respectively provided with a stage drive system and the like.

As shown in the plan view of FIG. 2, the stage drive systems are arranged on one side (+ Y side) and the other side (−Y side) of the wafer stage base 12 in the Y-axis direction, respectively.
A pair of X-axis linear guides 83X ₁ , 83 extending in the axial direction
X ₂ , a pair of sliders 84X ₁ , 85X ₁ and 8 that move along these X-axis linear guides 83X ₁ and 83X _2.
4X ₂ , 85X ₂ , the sliders 84X ₁ , 84X ₂ are provided at both ends thereof, and the sliders 84X ₁ , 84X ₂
Y-axis linear guide 72 that moves in the X-axis direction integrally with
Y, the sliders 85X ₁ and 85X ₂ are provided at both ends thereof, and a Y-axis linear guide 74Y that moves in the X-axis direction integrally with the sliders 85X ₁ and 85X ₂ is provided.

The pair of X-axis linear guides 83X ₁ , 8
The 3X ₂ is composed of, for example, a magnetic pole unit containing a large number of permanent magnets arranged at predetermined intervals along the X-axis direction. As can be seen from the combination of FIGS. 1 and 2, the X-axis linear guide 83X ₁ has one end on the X-axis direction and the other end on the other side so that the X-axis linear guide 83X ₁ is substantially horizontal at a predetermined height from the floor surface F. It is supported by the support members 52A and 52B. Similarly, the other X-axis linear guide 83X ₂ is arranged on one side in the X-axis direction so as to be substantially horizontal at a predetermined height position from the floor surface F (the same height position as the X-axis linear guide 83X ₁ ). The other end is supported by the support members 52C and 52D.

The two sliders 84X ₁ and 85X ₁ are
It has an inverted U-shaped cross-section that surrounds the X-axis linear guide 83X ₁ from above and laterally, and is supported in a non-contact manner with the X-axis linear guide 83X ₁ by a gas static pressure bearing (not shown). There is. These sliders 84X ₁ and 85X ₁ respectively have armature coils built therein. That is, in the present embodiment, the slider (armature unit) as the mover
The moving magnet type X-axis linear motors are respectively configured by 84X ₁ and 85X ₁ and the X-axis linear guide (magnetic pole unit) 83X ₁ as a stator.

The remaining two sliders 84X ₂ , 85X
₂ has an inverted U-shaped cross-section that surrounds the X-axis linear guide 83X ₂ from above and laterally, and is in non-contact with the X-axis linear guide 83X ₂ by a gas static pressure bearing (not shown). It is supported. These sliders 84X ₂ , 85X ₂
Has a built-in armature coil. That is, in the present embodiment, moving coil type X-axis linear motors are respectively formed by sliders (armature units) 84X ₂ and 85X ₂ as movers and X-axis linear guides (magnetic pole units) 83X ₂ as stators. It is configured.
In the following, each of the four X-axis linear motors will be described with a slider 84X ₁ ,
The same reference numerals as 85X ₁ , 84X ₂ , 85X ₂ are used, and the X-axis linear motor 84X ₁ and the X-axis linear motor 85 are appropriately used.
These are referred to as X ₁ , X-axis linear motor 84X ₂ and X-axis linear motor 85X ₂ .

The Y-axis linear guide 72Y has the Y-axis direction as the longitudinal direction, and the slider 8 is provided at one end in the longitudinal direction.
4X ₁ is fixed and slider 84X ₂ is attached to the other end in the longitudinal direction.
Is fixed. The Y-axis linear guide 72Y is composed of, for example, an armature unit that incorporates a large number of armature coils arranged at predetermined intervals along the Y-axis direction. Similarly, the Y-axis linear guide 74Y has the Y-axis direction as the longitudinal direction, the slider 85X ₁ is fixed to one end in the longitudinal direction, and the slider 85X ₁ is attached to the other end in the longitudinal direction.
X ₂ is fixed. This Y-axis linear guide 74Y
Is composed of, for example, an armature unit containing a large number of armature coils arranged at predetermined intervals along the Y-axis direction. Therefore, the Y-axis linear guides 72Y and 74Y
Is a pair of X-axis linear motors 84X ₁ , 84X ₂ , 85
X ₁ and 85X ₂ are respectively driven along the X axis.

As shown in FIG. 3, one Y-axis linear guide 72Y is in a state of being inserted into a rectangular opening extending in the Y-axis direction provided in the stage main body 172Y constituting one wafer stage WST1. Has become. That is, the stage main body 172Y includes the Y-axis linear guide 72.
It is provided so as to surround Y. On the bottom surface of the stage body 172Y, a plurality of gas static pressure bearings (not shown) are provided at a plurality of locations, and the stage body 172Y (wafer stage WST
1) is levitationally supported on the wafer stage base 12 (see FIGS. 1 and 2) with a space of, for example, several μm maintained.

Inside the rectangular opening of the stage main body 172Y, for example, a yoke having a rectangular frame cross section extending in the Y-axis direction and upper and lower facing surfaces of the yoke are provided at predetermined intervals along the Y-axis direction and mutually. A magnetic pole unit including a plurality of permanent magnets arranged to face each other is provided. In this case, an alternating magnetic field in the Y-axis direction is formed in the internal space of the rectangular opening. That is, in the present embodiment, the Y-axis linear guide (armature unit) 72Y as the stator and the stage body 1
A moving magnet type Y-axis linear motor that drives wafer stage WST1 in the Y-axis direction is configured by the magnetic pole unit provided in 72Y.

Similar to the above, the other Y-axis linear guide 7
4Y is in a state of being inserted in a rectangular opening extending in the Y-axis direction provided in a stage main body (not shown) that constitutes the other wafer stage WST2. The stage main body that constitutes the wafer stage WST2 is configured in the same manner as the stage main body 172Y described above, and is similarly levitationally supported on the wafer stage base 12 (see FIGS. 1 and 2). In this case as well, the wafer stage W is provided by the Y-axis linear guide (armature unit) 74Y as the stator and the magnetic pole unit provided on the stage body.
A moving magnet type Y-axis linear motor that drives ST2 in the Y-axis direction is configured.

In the following, the two Y-axis linear motors will be referred to as Y-axis linear motor 72Y and Y-axis linear motor 74Y, respectively, by using the same reference numerals as those of the linear guides 72Y and 74Y constituting the respective stators. I shall call it.

[0069] In this embodiment, the X-axis linear motors 84X _1, 84X ₂ and the Y-axis linear motors 72Y described above, the stage drive system that drives the wafer stage WST1 XY two-dimensional is constructed, X-axis linear motors 85X _1, 8
Wafer stage WST2 can be operated independently of wafer stage WST1 by 5X ₂ and Y-axis linear motor 74Y.
A stage drive system for two-dimensional Y drive is configured.

The X-axis linear motors 84X ₁ , 84X ₂ ,
85X _1, 85X ₂ and the Y-axis linear motors 72Y, 74Y
Are controlled by the stage controller 19 shown in FIG.

A pair of X-axis linear motors 84X ₁ ,
The yawing of wafer stage WST1 can be controlled by slightly differentiating the thrusts generated by 84X ₂ . Similarly, a pair of X-axis linear motors 85X ₁ ,
The yawing of wafer stage WST2 can be controlled by slightly differentiating the thrusts generated by 85X ₂ .

The one wafer stage WST1 is, as shown in FIG. 3, the stage body 172Y and a plate-shaped wafer table TB1 mounted on the stage body 172Y via a Z tilt drive mechanism (not shown). It has and. A wafer holder (not shown) is provided on the upper surface of the wafer table TB1, and the wafer W1 is held by the wafer holder by electrostatic attraction or vacuum attraction.

Further, on the upper surface of the wafer table TB1,
The fiducial mark plate FM1 is installed so as to have substantially the same height as the wafer W1. On the surface of the reference mark plate FM1, a pair of first reference marks (not shown) are formed in a positional relationship corresponding to a pair of reticle marks (not shown) formed on the reticle R. Also, this reference mark plate F
A second reference mark is formed on the surface of M1 in a predetermined positional relationship with the pair of first reference marks, for example, at the center position of these marks. The first fiducial mark is a mark whose purpose is to measure the positional relationship with a corresponding reticle mark by a pair of reticle alignment microscopes described later, and the second fiducial mark is a mark detected by an alignment system ALG1 described later. Is.

Further, on the upper surface of the wafer table TB1,
An X moving mirror 96X having a reflecting surface orthogonal to the X axis is provided at one end in the X axis direction (−X side end) so as to extend in the Y axis direction, and is orthogonal to the Y axis at one end in the Y axis direction (+ Y side end). Y with a reflective surface
The movable mirror 96Y extends in the X-axis direction. For example, as shown in FIG. 2, an interferometer 40X that constitutes an interferometer system (which will be described later in detail) as a first position measuring device is provided on each of the reflecting surfaces of the movable mirrors 96X and 96Y. Interferometer beam (measurement beam) from ₁ , 40Y _1, etc.
Is projected and the reflected light is received by each interferometer, so that the reference position of each movable mirror reflecting surface (generally, the projection optical system P
A fixed mirror is arranged on the L side surface or the side surface of the alignment system ALG1 and the displacement from the fixed mirror is used as a reference surface), and thereby the two-dimensional position of the wafer stage WST1 is measured.

Returning to FIG. 3, in the vicinity of the + Y side end of the −X side sidewall of the stage body 172Y, a U-shape (U-shape) forming a part of the linear encoder ENC1 as the second position measuring device is formed. 33A of readers (scale readers) are fixed. This reader (scale reader) 33A
A slit plate (main scale) 31A extending in the Y-axis direction, which constitutes a part of the linear encoder ENC1 together with the reader 33A, is inserted in the central space of the. A large number of slits are formed in the main scale 31A at a predetermined pitch along the Y-axis direction. The main scale 31A has one end fixed to the −Y side surface of the slider 84X ₁ and is arranged parallel to the Y-axis linear guide 72Y.

The reader 33A has a housing having a U-shaped cross section (U shape), a light emitting element such as a light emitting diode (LED) provided inside (for example, an upper surface) of the housing, and faces the light emitting element. An index scale (a short slit plate having a small number of slits having the same pitch as the main scale) provided at a position (for example, an inner lower surface) and a light receiving element such as a photodiode (PD) are provided.
Then, as shown in FIG. 3, when the slit plate 31A enters the inside of the housing, when light is emitted from the light emitting element, the light passes through the slit formed in the slit plate 31A, It reaches the light receiving element. Therefore, each time the wafer stage WST1 moves in the Y-axis direction by, for example, one pitch of the slit, the amount of light incident on the light receiving element changes by one cycle from a bright portion to a dark portion. Therefore, the amount of movement (or speed) of wafer stage WST1 can be measured by measuring the frequency of the output of the light receiving element.

The measured value of the linear encoder ENC1 is sent to the stage controller 19 shown in FIG. 4 and the main controller 20 via the stage controller 19. In the stage control device 19, in response to an instruction from the main control device 20, each interferometer and the linear encoder E, as will be described later.
Based on the output value of NC1, wafer stage WST1 is controlled via each linear motor that constitutes the stage drive system.

The other wafer stage WST2 has the same structure as the wafer stage WST1. That is, the wafer stage WST2 is
Similar to ST1, it includes a stage body and a plate-shaped wafer table mounted on the stage body via a Z tilt drive mechanism (not shown). A wafer holder (not shown) is provided on the upper surface of the wafer table, and the wafer W2 is held by the wafer holder by electrostatic attraction or vacuum attraction. As shown in FIG. 2, fiducial mark plate FM2 is installed on the upper surface of wafer stage WST2 (wafer table) so as to be substantially at the same height as wafer W2. A reference mark similar to the reference mark plate FM2 is also formed on the upper surface of the reference mark plate FM2. That is, a pair of first reference marks (not shown) are formed on the surface of the reference mark plate FM2 in a positional relationship corresponding to the pair of reticle marks (not shown) formed on the reticle R. Further, a second reference mark is formed on the surface of the reference mark plate FM1 in a predetermined positional relationship with the pair of first reference marks, for example, at the center position of these marks.

Further, on the upper surface of wafer stage WST2, an X moving mirror 97X having a reflecting surface orthogonal to the X axis at one end (-X side end) in the X axis direction is provided extending in the Y axis direction. A Y-moving mirror 97Y having a reflecting surface orthogonal to the Y-axis is provided at one end (+ Y side end) thereof in the X-axis direction. Interferometer beams from the interferometers constituting the interferometer system described later are projected on the reflecting surfaces of these movable mirrors 97X and 97Y, so that the two-dimensional position of wafer stage WST2 is the same as that of wafer stage WST1. It is designed to be measured. Similarly to the above, when the wafer stage WST2 is near the position shown in FIG. 2, for example, the position of the wafer stage WST2 in the Y-axis direction is set to the reader 33 described above.
A linear encoder ENC2 including a reader 33B similar to A and a main scale 31B similar to the main scale 31A can perform measurement. The measured value by the linear encoder ENC2 is shown in FIG.
Is sent to the main controller 20 via the stage controller 19 shown in FIG. In the stage controller 19, the wafer stage W based on the output values of the interferometers and the linear encoder ENC2 in response to the instruction from the main controller 20.
ST2 is controlled via each linear motor that constitutes the stage drive system.

Returning to FIG. 1, on both sides in the X-axis direction of the projection optical system PL, an off-axis type alignment system ALG as a mark detection system having the same function is provided.
1 and the alignment system ALG2 are installed at positions separated by the same distance in the X-axis direction from the optical axis center of the projection optical system PL (substantially coincident with the projection center of the reticle pattern image).

As the alignment systems ALG1 and ALG2, in the present embodiment, FIA (Filed Image Alignm), which is a kind of image processing type image forming alignment sensor, is used.
ent) type alignment sensor is used. These alignment systems ALG1 and ALG2 include a light source (for example, a halogen lamp) that constitutes a detection optical system, an imaging optical system, an index plate on which index marks serving as a detection reference are formed, an image sensor (CCD), and the like. It is configured. In these alignment systems ALG1 and ALG2, a mark as a detection target is illuminated with broadband light from a light source, and reflected light from the vicinity of the mark is received by a CCD via an imaging optical system and an index. At this time, the image of the mark is formed on the image pickup surface of the CCD together with the image of the index. By subjecting the image signal (imaging signal) from the CCD to a predetermined signal processing, the position of the mark based on the center of the index mark which is the detection reference point can be measured. FIA alignment sensors such as these alignment systems ALG1 and ALG2 are particularly effective for detecting asymmetric marks on the aluminum layer or the wafer surface.

In this embodiment, one alignment system A
LG1 is used for position measurement of a mark on wafer stage WST1, for example, an alignment mark formed on wafer W1. The other alignment system ALG2 is
A mark on wafer stage WST2, for example wafer W2
It is used to measure the position of the alignment mark formed above.

These alignment systems ALG1, ALG
The image signal from 2 is the alignment control device 13 of FIG.
Predetermined arithmetic processing is performed on the basis of the waveform signal which is A / D converted and digitized by 6, and the position of the mark with respect to the index center is detected. The information on the mark position is sent from the alignment controller 136 to the main controller 20.

These alignment systems ALG1,
The ALG2 is not limited to the alignment sensor of the image processing method as described above, but the well-known LIA (Laser Interferometric Al) that photoelectrically detects the interference light of the diffracted lights from the marks and obtains the mark position information from the phase difference thereof.
(ignition) type sensor, or a known LSA (Lase) that determines the position based on the amount of diffracted light from the mark.
r Step Alignment) type sensor may be used. Alternatively,
A so-called double diffraction grating type alignment sensor as disclosed in International Publication WO98 / 39689 may be used.

As shown in FIG. 2, the central region of the wafer stage base 12 located below the projection optical system PL (the region surrounded by the one-dot chain line) is the wafer on the wafer stages WST1 and WST2. Is an exposure area SA1 as a first specific area for performing exposure, and an area on the left side of the exposure area SA1 is an alignment area SA2a and an exposure area SA1 as a second specific area for aligning the wafer on the wafer stage WST1. The area on the right side of is an alignment area SA2b as a second specific area for aligning the wafer on wafer stage WST2.

Next, an interferometer system as a first position measuring device including a plurality of interferometers for measuring the two-dimensional position of each wafer stage will be described with reference to FIG.

As shown in FIG. 2, the wafer stage W
On the reflecting surface of the X moving mirror 96X on ST1, the projection optical system P
It passes through the optical axis AX of L and the optical axis of the alignment system ALG1.
Along the X-axis, X-axis interferometer 40X₁Interferometer beam from
Is being irradiated. Similarly, on wafer stage WST2
On the reflecting surface of the X moving mirror 97X of
Along the X axis that passes through AX and the optical axis of the alignment system ALG2.
X-axis interferometer 40X₂The interferometer beam from
Has been. And X-axis interferometer 40X₁, 40X ₂Then X
Receives reflected light from the movable mirrors 96X and 97X, respectively.
By doing so, measure the relative displacement of each reflecting surface from the reference position.
Position of wafer stages WST1 and WST2 in the X-axis direction
Is designed to measure. Here, the X-axis interferometer 40
X₁, 40X₂Is a multi-axis interferometer with multiple optical axes.
The wafer stage WST1 and WST2 in the X-axis direction.
In addition to measurement, tilt measurement and θz (yawing) measurement are possible
It has become Noh. Also, the output value of each optical axis can be measured independently.
Is ready.

The interferometer beams of the interferometers 40X ₁ and 40X ₂ are separated by the wafer stages WST1 and WST2.
The X moving mirrors 96X and 97X are always contacted in the entire moving range of the. Therefore, in the X-axis direction, the alignment system ALG is used during exposure using the projection optical system PL.
The positions of wafer stages WST1 and WST2 are determined by X-axis interferometer
It is managed based on the measured values of X ₁ and 40X ₂ .

Further, as shown in FIG. 2, a Y-axis interferometer 40Y which irradiates an interferometer beam perpendicularly intersecting the interferometer beams from the interferometers 40X ₁ and 40X _{2 on} the optical axis AX of the projection optical system PL. ₂ and Y-axis interferometers 40Y ₁ and 40Y _{3 for} irradiating the interferometer beams that intersect perpendicularly with the interferometers 40X ₁ and 40X _{2 on} the optical axes of the alignment systems ALG1 and ALG2, respectively. These interferometer 40Y ₁ and interferometer 40Y ₂ and interferometers 40Y ₂ and 40Y ₃ are
Y provided on each wafer stage WST1 and WST2
The movable mirrors 96Y and 97Y are provided with an interval L1 larger than the length in the X-axis direction.

Therefore, wafer stages WST1 and WST
Depending on the position of 2, the interferometer beam from the Y-axis interferometer may deviate from the reflecting surface of wafer stages WST1 and WST2.

Further, in this embodiment, the projection optical system PL is
At the time of exposure used (when located in the exposure area SA1)
For position measurement of wafer stages WST1 and WST2 in Y direction
Is an interferometer beam passing through the optical axis AX of the projection optical system PL.
Y-axis interferometer 40Y ₂The measured value of
When using the liment system ALG1 (alignment area
Wafer stage WST1 (when located in SA2a)
The position of the optical axis of the alignment system ALG1
Y-axis interferometer 40Y for irradiating an interferometer beam passing through₁
When using the alignment system ALG2
Etc. (when located in the alignment area SA2b)
Alignment is required for Y-direction position measurement of wafer stage WST2.
Irradiating an interferometer beam that passes through the optical axis of the ment system ALG2
Y-axis interferometer 40Y₃The measured value of is used.

The Y-axis interferometers 40Y ₁ , 40Y ₂ ,
Each of 40Y ₃ is actually a multi-axis interferometer having a plurality of optical axes, and Y of wafer stages WST1 and WST2.
In addition to axial measurement, tilt measurement is possible.
The output value of each optical axis can be measured independently.

In this embodiment, two X-axis interferometers 40X are used.
₁ , 40X ₂ , three Y-axis interferometers 40Y ₁ , 40Y ₂ , 40
Y ₃ constitutes an interferometer system. And
The measured values of the interferometers constituting this interferometer system are sent to the stage controller 19 shown in FIG. 4 and the main controller 20 via the stage controller 19. The stage control device 19 responds to an instruction from the main control device 20 based on the output values of the interferometers, and sets the wafer stages WST1, WST.
ST2 is controlled via each stage drive system described above.

_On the −Y side of X-axis linear guide 83X ₂ (on the lower side of the paper surface in FIG. 2), a pair of wafer transfer mechanisms 8 composed of horizontal articulated robots (scalar robots) are provided.
0A and 80B are installed at a predetermined interval. One of the wafer transfer mechanisms 80A has a wafer stage WST1.
And a wafer carrier (cassette) (not shown). The other wafer transfer mechanism 80B transfers the wafer between wafer stage WST2 and the wafer carrier (cassette).

Further, in the present embodiment, although not shown in FIG. 1 and the like, the projection optical system P is arranged above the reticle R.
Reticle alignment microscopes RA1 and RA2 of the TTR (Through The Reticle) method using an exposure wavelength for simultaneously observing the reticle mark on the reticle R and the marks on the reference mark plates FM1 and FM2 via L (see FIG. 4). ) Is provided. Detection signals of these reticle alignment microscopes RA1 and RA2 are supplied to main controller 20 via alignment controller 136. The reticle alignment microscope RA
1 and RA2 have the same configuration as that disclosed in, for example, JP-A-7-176468.

Although not shown in FIG. 1 and the like, the projection optical system PL and the alignment systems ALG1 and ALG are not shown.
Each of 2 is provided with an autofocus / autoleveling measuring mechanism for checking the in-focus position. In addition, in FIG. 4, each autofocus /
AF / AL system 150 with auto leveling measurement mechanism
It is shown as. In this way, the projection optical system PL and the pair of alignment systems ALG1 and ALG2 are provided with AF / AL
The configuration of the exposure apparatus provided with the system 150 is described in, for example, Japanese Patent Laid-Open No.
Since it is disclosed in detail in Japanese Patent No. 214783 and is publicly known, further description is omitted here.

FIG. 4 shows the exposure apparatus 10 according to this embodiment.
The main configuration of the control system of is shown. This control system
The main control device 20 that controls the entire device as a whole, a stage control device 19 under the control of the main control device 20, an alignment control device 136, and the like are mainly configured.

Next, the two wafer stages WST1 and WST
Regarding the parallel processing operation by ST2, FIG.
The operation of each component of the control system will be mainly described with reference to FIG.

FIG. 5A shows the wafer stage WST1.
The upper wafer W1 is exposed as described below, and in parallel with this, wafer exchange is performed on the wafer stage WST2 at the right loading position with the wafer transfer mechanism 80B (see FIG. 2). The state is shown. In the present embodiment, the right side loading position is set right below the alignment system ALG2.
It is set at a position where the second fiducial mark on the fiducial mark plate FM2 of ST2 comes.

First, the control operation of each part during the exposure operation performed on the wafer stage WST1 side will be described.

In this exposure sequence, in the stage controller 19, the measured values of the interferometers 40X ₁ and 40Y ₂ are sent from the main controller 20 according to a command given based on the result of wafer alignment performed in advance. While monitoring, the X-axis linear motors 84X ₁ and 84X ₂ and the Y-axis linear motor 72Y are controlled to move the wafer stage WST1 to the scan start position (acceleration start position) for exposure of the first shot area of the wafer W1. . In this exposure sequence, the position of wafer stage WST1 is managed on the coordinate system defined by the length measurement axes of interferometers 40X ₁ and 40Y ₂ (hereinafter referred to as “first exposure coordinate system” for convenience).

Next, in the stage controller 19, the reticle R and the wafer W1, that is, the reticle stage RST and the wafer stage WST1 according to the instruction of the main controller 20.
And relative scanning in the Y-axis direction is started. At the time of this relative scanning, the stage control device 19 uses the interferometer 40 described above.
The reticle drive unit 26 and the Y-axis linear motor 72Y (and the X-axis linear motors 84X ₁ and 84X ₂ ) are monitored while monitoring the measurement values of the X ₁ and 40Y ₂ and the reticle interferometer system 36.
To control.

When both stages RST and WST1 are accelerated to their respective target scanning speeds, main controller 2
At 0, the laser control device 18 is instructed to start pulsed light emission, and at the same time, a predetermined blade of a movable reticle blind (not shown) in the illumination optical system forming the illumination system IOP is synchronized with the movement of the reticle stage RST. The blind drive device (not shown) is controlled. This prevents irradiation of the ultraviolet pulsed light outside the pattern area on the reticle R.

Then, when both stages RST and WST1 reach the constant velocity synchronized state, the pattern area of the reticle R starts to be illuminated by the ultraviolet pulse light from the illumination system IOP,
Scanning exposure is started.

During the above scanning exposure, the stage controller 19 controls the moving speed V _R of the reticle stage RST in the Y-axis direction and the moving speed V _{W of the} wafer stage WST1 in the Y-axis direction.
And the projection magnification of the projection optical system PL (1/4 times or 1
The reticle stage RST and the wafer stage WST1 are synchronized with each other via the reticle drive unit 26 and the Y-axis linear motor 72Y (and the X-axis linear motors 84X ₁ and 84X ₂ ) so as to maintain the speed ratio according to (5 times). Control.

Then, different areas of the pattern area of the reticle R are sequentially illuminated with the ultraviolet pulse light, and the illumination of the entire pattern area is completed, whereby the scanning exposure of the first shot area on the wafer W1 is completed. This allows
The pattern of the reticle R is reduced and transferred to the first shot area via the projection optical system PL.

In this case, a predetermined blade of the movable reticle blind is moved to the reticle stage RST by a blind drive device (not shown) in response to an instruction from the main controller 20.
By being moved in synchronism with, the irradiation of the ultraviolet pulse light to the outside of the pattern region on the reticle R immediately after the end of the scanning exposure is prevented.

As described above, the first shot area is run.
When the inspection exposure is completed, based on the instruction from the main controller 20,
The stage control device 19 controls the X-axis linear motor 8
4X ₁, 84X₂And Y-axis linear motor 72Y
The roof stage WST1 is moved stepwise in the X and Y axis directions.
The acceleration start position (running) for the exposure of the second shot area
Moved to the inspection start position). Stepping between this shot
During the operation, the stage controller 19 causes the interferometer 40
X₁, 40Y₂Wafer stage WST based on the measured value of
Positional displacement of X, Y and θz of 1 is measured in real time
To do. Then, based on this measurement result, the stage control device
In position 19, the XY position displacement of wafer stage WST1 is
Position of wafer stage WST1 so as to be in a predetermined state
To control. Further, in the stage control device 19, the wafer
Based on the information on the displacement of the tage WST1 in the θz direction.
Reticle so as to compensate the error of rotational displacement on the wafer side of
Stage RST (reticle fine movement stage) and wafers
The rotation of at least one of the tage WST1 is controlled.

When the stepping between shots is completed, the operation of each part is controlled by the stage control device 19 and the laser control device 18 in the same manner as described above in accordance with the instruction from the main control device 20, and the second control on the wafer W1 is performed. Scanning exposure similar to the above is performed on the shot area.

In this way, the scanning exposure of the shot area on the wafer W1 and the stepping operation for the next shot exposure are repeated, and the pattern of the reticle R is sequentially transferred to all the shot areas to be exposed on the wafer W1. To be done.

As described above, while the wafer W1 is being exposed by the step-and-scan method, the wafer alignment operation is performed on the wafer stage WST2 following the wafer exchange as will be described later. Done. At the time of FIG. 5 (A), the position of wafer stage WST2 is determined by stage controller 19 based on the measurement values of interferometers 40X ₂ and 40Y ₃ in accordance with an instruction from main controller 20. Linear motor 85X ₁ , 85
It is managed by controlling the X ₂ and Y axis linear motors 74Y. In this case, the interferometer 40Y ₃ has the alignment system ALG2 at the right loading position.
Before detecting the second reference mark on the reference mark plate FM2 by the main controller 20, the main controller 20 causes the stage controller 19
A reset is being performed via.

In detecting the second reference mark,
An image of the second fiducial mark is captured by the alignment system ALG2 and the image signal thereof is used by the alignment control device 13
Sent to 6. The alignment control device 136 performs a predetermined process on the image signal and analyzes the processed signal to detect the position of the second reference mark with the index center of the alignment system ALG2 as a reference. Main controller 20
Then, the detection result of the position of the second reference mark and the interferometer 4
Based on the measurement results of 0X ₂ and 40Y ₃ , the interferometer 40X
_2nd on the coordinate system defined by the length measuring axes of ₂ and 40Y ₃ (hereinafter, referred to as “second alignment coordinate system” for convenience)
The coordinate position of the reference mark is calculated.

Next, main controller 20 performs wafer alignment by the enhanced global alignment (EGA) method as disclosed in, for example, Japanese Patent Laid-Open No. 61-22249, and the shot area of each wafer W2 is shot. The coordinate position on the coordinate system during the second alignment is calculated. Then, main controller 20 calculates the relative position of each shot area with respect to the second reference mark by subtracting the coordinate position of the second reference mark described above from those coordinate positions.

The above-mentioned two wafer stages WST1,
The exposure sequence and the wafer exchange / alignment sequence performed in parallel on the WST 2 usually end earlier in the wafer exchange / alignment sequence. Therefore, the wafer stage WST2 after the alignment is completed
Enters a waiting state at a predetermined waiting position.

In the stage controller 19, the main controller 2
In response to an instruction from 0, wafer stage WST2 is driven in the + Y direction by a predetermined distance toward a predetermined standby position shown in FIG. 5 (B). In this case, the standby position is a position where the wafer stage WST2 can measure the position in the Y-axis direction by the above-mentioned linear encoder ENC2, that is, a position where the main scale 31B constituting the linear encoder ENC2 is inserted inside the reader 33B. And second
Any position may be used as long as the position of wafer stage WST2 can be managed by the coordinate system during alignment. afterwards,
Wafer stage WST2 stands by at its predetermined standby position.

On the wafer stage WST1 side, when exposure of wafer W1 is completed, stage controller 19 drives wafer stage WST2 in the −X direction in response to an instruction from main controller 20. Wafer stage WST1
Is driven in the + Y direction. As shown in FIG. 6 (A), the wafer stage WST1 is linear encoder ENC in this way.
1 to the position where the position in the Y-axis direction can be measured, that is, the main scale 31 that constitutes the linear encoder ENC1.
The state where A has been moved to the position where it is inserted into the reader 33A is shown.

When wafer stage WST1 reaches the position shown in FIG. 6A, stage controller 19 further drives wafer stage WST2 in the -X direction in response to an instruction from main controller 20. With
The operation of driving wafer stage WST1 in the −X direction is started. Then, wafer stages WST1 and WST
Each of ST2 is controlled by the stage controller 19 by the X-axis linear motors 84X ₁ and 84X ₂ , the Y-axis linear motor 72Y, and the X-axis linear motors 85X ₁ and 85, respectively.
The position shown in FIG. 6 (B) is set as a target position via the X ₂ and Y axis linear motors 74Y, and each of them is driven along a predetermined movement path.

During this movement, when the wafer stage WST2 moves from the state shown in FIG. 6A by a predetermined amount in the -X direction, the interferometer beam from the Y-axis interferometer 40Y ₃
It does not hit the Y moving mirror 97Y of wafer stage WST2. At this point, the interferometer beam from the Y-axis interferometer 40Y ₂ also does not hit the Y moving mirror 97Y. This is because the interval L1 (see FIG. 2) of the interferometer beams from the adjacent Y-axis interferometers is longer than that of the Y moving mirror 97Y, as described above.

Therefore, based on the instruction from the main controller 20, the stage controller 19 is
The interferometer beam from the Y-axis interferometer 40Y ₃ is moved by the Y moving mirror 97.
At some point until no touch the Y (outside), Y-axis direction position of the wafer stage WST2 (Y position) Y-axis interferometers 40Y ₃ position measurement apparatus used for measuring the
From the linear encoder ENC2,
The value of the Y-axis interferometer 40Y ₃ at the time of switching is stored. Further, in the stage control device 19, from the time of switching to the linear encoder ENC2, based on the detection value of the linear encoder ENC2, the Y-axis linear motor 74Y.
Is servo-controlled to keep the Y position of wafer stage WST2 constant. Then, the stage control device 1
In 9, the wafer stage WST2 is further moved in the −X direction to a position where the Y moving mirror 97Y hits the interferometer beam of the Y axis interferometer 40Y _{2 and} the interferometer beam of the Y axis interferometer 40Y ₂ is moved to the Y moving mirror 97Y. Immediately after hitting, the value of the Y-axis interferometer 40Y ₂ is preset to the previously stored value of the Y-axis interferometer 40Y ₃ in accordance with the instruction from the main controller 20. As a result, Y of wafer stage WST2
The position measuring device used to measure the position is the linear encoder E.
The NC ₂ is switched to the Y-axis interferometer 40Y ₂ . After that point, the stage controller 19 moves the wafer stage WST2 on the coordinate system defined by the length measurement axes of the interferometers 40X ₂ and 40Y ₂ (hereinafter, referred to as “second exposure coordinate system” for convenience). Figure 6 (B) while managing the position
The wafer stage WST2 is driven toward the target position where the pair of first reference marks on the reference mark plate FM2 are located directly below the optical axis AX (projection center) of the projection optical system PL shown in FIG. That is, the linear encoder ENC2 is in a state where the Y moving mirror 97Y on the wafer stage WST2 is not hit by the interferometer beam from the Y-axis interferometer 40Y ₃ , and Y
When the moving mirror 97Y is not hit by the interferometer beam from the Y-axis interferometer 40Y ₂ , the wafer stage WST
It acts on the position control of 2.

In parallel with the movement of wafer stage WST2 in the -X direction described above, stage controller 19 drives wafer stage WST1 in the -X direction from the position shown in FIG. 6A by a predetermined amount. This wafer stage WS
The movement of T1 in the −X direction is performed by wafer stage WST1.
Is moved from a position below the projection optical system PL to a left side loading position (position where wafer exchange is performed). By the way, when there is a wafer to be exposed next, wafer stage WST1 is moved to this left loading position to perform a wafer exchange operation, and then an alignment for detecting the mark on the exchanged wafer. Detection position (replaced wafer with alignment system ALG1
Move to the position for measuring. That is, it can be said that the movement of wafer stage WST1 in the -X direction is a part of the movement toward the position where the wafer measurement operation is performed subsequently by alignment system ALG1 after the wafer is exchanged. In other words, the wafer stage WS
In parallel with the movement of T2 in the -X direction (movement from below alignment system ALG2 to below projection optical system PL), wafer stage WST1 moves from below projection optical system PL to below alignment system ALG1. All the movements in the -X direction are performed.

Even during the movement of wafer stage WST1 in the -X direction, the above-mentioned wafer stage WS
Similar to the case of moving T2 in the -X direction, the Y-axis interferometer 40
There is a state (moving period, moving section) in which none of the interferometer beams from Y ₂ and 40Y ₁ hit the Y moving mirror 96Y. Furthermore, since wafer stage WST1 and wafer stage WST2 are moving in the −X direction in parallel, both wafer stages WST1 and WST2 are both Y
There may be a state (period, section) that cannot be measured by the axis interferometer. When neither of the two stages can be measured by the Y-axis interferometer, the Y position of wafer stage WST2 is managed by linear encoder ENC2 as described above, and the Y position of wafer stage WST1 is also adjusted by linear encoder ENC1 as described later. Will be managed in. That is, the stage control device 19 moves the both stages in parallel, depending on the positions of the two stages.
The Y position of all stages can be controlled by a linear encoder (both stages have a control mode of controlling by a linear encoder).

Position management of wafer stage WST1 performed when moving wafer stage WST1 in the -X direction will be described below. In the stage controller 19, the Y-axis interferometer 40Y is moved during the movement of the wafer stage WST1.
At any time when the interferometer beam from ₂ does not hit the Y moving mirror 96Y, the wafer stage W
The position measuring device used for measuring the Y position of ST1 is switched from the Y-axis interferometer 40Y ₂ to the linear encoder ENC1.
The value of the Y-axis interferometer 40Y ₂ at the time of switching is stored. Also, in the stage control device 19, from the time of switching to the linear encoder ENC1, based on the detection value of the linear encoder ENC1, the Y-axis linear motor 72Y.
Is servo-controlled to keep the Y position of wafer stage WST1 constant. Then, the stage control device 1
9, the wafer stage WST1 is moved to the position where the interferometer beam from the Y-axis interferometer 40Y ₁ hits the Y moving mirror 96Y.
Is further moved in the −X direction, and immediately after the interferometer beam of the Y-axis interferometer 40Y ₁ hits the Y-moving mirror 96Y, in response to an instruction from the main controller 20, the Y-axis interferometer 40 is moved.
The value of Y ₁ is preset to the value of the Y-axis interferometer 40Y ₂ stored previously. As a result, the wafer stage WST
The position measuring device used for measuring the Y position of _{No. 1} is switched from the linear encoder ENC1 to the Y-axis interferometer 40Y ₁ . Then, after that time, the stage control device 19 sets the coordinate system defined by the measuring axes of the interferometers 40X ₁ and 40Y ₁ (hereinafter referred to as “first alignment coordinate system” for convenience).
(Hereinafter referred to as “the wafer stage WST1”), the target position where the second fiducial mark on the fiducial mark plate FM1 is located directly below the alignment system ALG1 shown in FIG. Wafer stage WST1 is driven toward. That is, the linear encoder ENC1 acts on the position control of the wafer stage WST1 when the Y moving mirror 96Y of the wafer stage WST1 is not hit by the interferometer beams from the Y-axis interferometers 40Y ₂ and 40Y ₁ .

When wafer stage WST2 moves to the position shown in FIG. 6B, main controller 20 causes pair of reticle alignment microscopes RA1 and RA2 (see FIG. 4).
(See), the relative position of the projection image on the wafer surface of the pair of first reference marks on the reference mark plate FM2 and the corresponding reticle marks is detected using the exposure light. Then, the relative positional relationship between the exposure position (the projection center of the projection optical system PL) and the position of the pair of first reference marks on the reference mark plate FM2 is obtained from the detected relative position information.

In the main controller 20, the relative positional relationship between the exposure position obtained above and the coordinate positions of the pair of first reference marks on the reference mark plate FM2 and the reference mark plate FM2 obtained previously are determined. The relative positional relationship between the exposure position and each shot area on the wafer W2 is calculated based on the relative positional relationship between each shot area on the wafer W2 and the second reference mark. Then, based on the calculation result, the main controller 5
In the case of 0, as in the case of the wafer W1 described above, while controlling the position of the wafer stage WST2 on the coordinate system during the second exposure, the pattern of the reticle R is formed on each shot area on the wafer W2 by the step-and-scan method. Is transcribed.

Although not explicitly stated in the above description of the exposure of the wafer W1, in this case as well, the relative positional relationship between the exposure position and each shot area on the wafer W1 is exposed in the same manner as described above. Needless to say, there is a need before the.

On the other hand, at the left side loading position shown in FIG. 6B, the second fiducial mark on the fiducial mark plate FM1 is positioned under the alignment system ALG1 similarly to the right side loading position. The wafer exchange operation using the transfer mechanism 80A (see FIGS. 2 and 4) is executed. Of course, the reset operation of the interferometer 40Y ₁ is executed prior to the detection of the second fiducial mark on the fiducial mark plate FM1 by the alignment system ALG1.

As can be seen from the above description, in the present embodiment, main controller 20 and stage controller 19 constitute a movement controller for controlling the movement of wafer stages WST1 and WST2.

As described above, the exposure apparatus 10 according to the first embodiment and the stage apparatus 3 constituting the exposure apparatus 10
0, and according to the stage position management method, an area in which each wafer stage performs the exposure operation on the wafer (hereinafter, referred to as “first specific area”) and an area in which the alignment operation and the wafer exchange operation on the wafer are performed (hereinafter, referred to as “first specific area”). , "The second specific area"), the position of each wafer stage is measured by each interferometer constituting the interferometer system, and each wafer stage is positioned between the first specific area and the second specific area. The position of each wafer stage is measured by the linear encoder when it is within the predetermined range including at least a predetermined partial area in which the position measurement of each wafer stage cannot be performed by the interferometer system during the movement of . That is, by using the laser interferometer and the linear encoder together, it is possible to constantly measure the position of each wafer stage within the moving region of each wafer stage.

Further, the exposure apparatus 1 according to the first embodiment
According to 0, the main controller 20 uses the position measuring device (interferometer system and linear encoder) used for measuring the Y position of each wafer stage, as described above, according to the position of each wafer stage. It is possible to use an interferometer system capable of higher-accuracy position measurement as much as possible, and it is possible to use a linear encoder whose measurement accuracy is slightly inferior only in a predetermined range where this measurement is difficult. ing. Further, since main controller 20 performs the above switching according to the position of each wafer stage, it is also possible to maintain the Y position of the wafer stage at a predetermined position during position measurement by the linear encoder. . Therefore, the length of the main scale of the linear encoder is the minimum necessary.

Further, in the exposure apparatus of the present embodiment, the length of the movable mirror on the wafer stage can be minimized by adopting the switching of the position measuring apparatus according to the position of the above stage. As a result, it is possible to improve the position controllability by downsizing the wafer stage and to process the reflecting surface with higher precision, which increases the flatness of the reflecting surface, resulting in the position of the wafer stage. It is possible to further improve the controllability. Further, for example, it is not necessary to increase the number of length measurement beams of the interferometer system or increase the length of the reflecting surface irradiated with the length measurement beams.

Therefore, it is possible to improve the position controllability by downsizing the wafer stage without increasing the manufacturing cost of the apparatus, and in addition, it includes the overlay accuracy of the reticle pattern and each shot area on the wafer. It is possible to improve the exposure accuracy. This enables highly accurate transfer of a fine pattern.

In the above embodiment, when the wafer stages WST1 and WST2 both move in the -X direction, the position control is performed by the linear encoders ENC1 and ENC2 in some periods (sections). Wafer stages WST1 and WST2 are +
The same control is performed when moving in the X direction. That is, wafer stage WST1 is aligned with alignment system AL.
In the case where wafer stage WST2 moves from below projection optical system PL toward the right side loading position in parallel with moving from below G1 to below projection optical system PL (in other words, wafer stage WST2 moves to alignment system). A
When moving on the moving path toward the right side loading position which is a part of the moving path of the LG2 downward), in a situation where neither of the Y-axis interferometers can measure both stages (moving period, moving section) In the above, the stage control device 19 manages the Y positions of both stages with a linear encoder (both stages have a control mode in which they are controlled by a linear encoder).

<< Second Embodiment >> Next, a second embodiment of the present invention will be described with reference to FIGS. 7 to 10B. Here, the same reference numerals will be used for the same or equivalent components as those in the first embodiment described above, and the description thereof will be simplified or omitted.

The exposure apparatus according to the second embodiment is different from the exposure apparatus according to the first embodiment described above in that only one alignment system (alignment system ALG) is provided, and accordingly, A characteristic is that a stage device 130 shown in FIG. 7 is provided instead of the stage device 30 described above. The configuration and the like of the other parts are the same as those in the first embodiment described above. Therefore, in the following, these differences will be mainly described.

FIG. 7 schematically shows a stage device 130 according to the second embodiment in a plan view. This stage device 130, like the first embodiment, has two wafer stages which independently and two-dimensionally move along the upper surface of the wafer stage base 12 in the X-axis direction which is the non-scanning direction and the Y-axis direction which is the scanning direction. WST1 and WST2, and first and second stage drive systems for respectively driving these wafer stages WST1 and WST2 are provided.

First step for driving wafer stage WST1
The tage drive system, as shown in the plan view of FIG.
One side (-X side) of the hastage base 12 in the X-axis direction and the other side
A pair arranged on the (+ X side) and extending in the Y-axis direction
Y-axis linear guide 102Y ₁, 102Y₂, These Y
Axis linear guide 102Y₁, 102Y₂Move along
A pair of Y-axis sliders 92Y₁, 92Y₂, The Y-axis slider
92Y₁, 92Y₂Are provided at both ends of the
Rider 92Y₁, 92Y₂Move in the Y-axis direction integrally with
X-axis linear guide 93X₁And so on.

In this case, the Y-axis slider 92Y ₁
And the Y-axis linear guide 102Y _{1 form a} Y-axis linear motor 112Y ₁ . Further, the Y-axis slider 92Y ₂ and the Y-axis linear guide 102Y ₂ constitute a Y-axis linear motor 112Y ₂ .

The X-axis linear guide 93X ₁ is composed of, for example, an armature unit, and a mover, for example, a magnetic pole unit provided on the stage main body 63X ₁ constituting the wafer stage WST1 is arranged so as to surround the entire circumference. That is, X which drives wafer stage WST1 in the X-axis direction by X-axis linear guide 93X ₁ and the mover.
An axial linear motor (hereinafter referred to as "X-axis linear motor 93X ₁ " for the sake of convenience, using the same reference numeral as that of the X-axis linear guide 93X ₁ which is a stator) is configured.

Similarly, the second stage drive system for driving wafer stage WST2 is arranged on one side (-X side) and the other side (+ X side) in the X-axis direction of wafer stage base 12, respectively, and is arranged in the Y-axis direction. A pair of Y-axis linear guides 10 extending
4Y ₁ and 104Y ₂ , these Y-axis linear guides 104Y
A pair of Y-axis sliders 94 that move along ₁ and 104Y _2.
Y ₁ , 94Y ₂ and the Y-axis sliders 94Y ₁ , 94Y ₂ are provided at both ends thereof, and the sliders 94Y ₁ , 94Y ₂
X-axis linear guide 93X that moves in the Y-axis direction integrally with
_{It has 2} mag.

In this case, the Y-axis slider 94Y ₁
And the Y-axis linear guide 104Y _{1 form a} Y-axis linear motor 114Y ₁ . Further, the Y-axis linear motors 114Y ₂ is constituted by a Y-axis slider 94Y ₂ and Y-axis linear guide 104Y _2.

The X-axis linear guide 93X ₂ is composed of, for example, an armature unit, and a mover, for example, a magnetic pole unit provided on the stage body 63X ₂ constituting the wafer stage WST2 is arranged so as to surround the entire circumference. That is, X that drives wafer stage WST2 in the X-axis direction by X-axis linear guide 93X ₂ and the mover.
An axial linear motor (hereinafter, referred to as “X-axis linear motor 93X ₂ ” for the sake of convenience, using the same reference numeral as that of the X-axis linear guide 93X ₂ that is a stator) is configured.

The Y-axis linear motors 112Y ₁ and 112
Y ₂ , 114Y ₁ , 114Y ₂ , and X-axis linear motor 9
3X ₁ and 93X ₂ are the stage control device 1 of FIG. 4 described above.
9, the control is performed according to an instruction from the main controller 20.

_On the upper surface of the Y-axis slider 92Y ₂ , there is provided a reader 33A which constitutes a part of the linear encoder ENC1 similar to that of the first embodiment. The Y-axis linear guide 102Y faces the reader 33A. the ₂ -Y side end upper surface portion, are arranged in parallel to the top surface main scale 31A is Y axis linear guide 102Y ₂ constituting the linear encoder ENC1.

Further, a reader 33B forming a part of a similar linear encoder ENC2 is provided on the upper surface of the Y-axis slider 94Y ₁ , and the reader 33B faces the reader 33B.
On the upper surface of the + Y side end of the stator 104Y ₁ of the axial linear motor, a slit plate 3 that constitutes a linear encoder ENC2 is provided.
1B is arranged parallel to the upper surface of the stator 104Y ₁ .

Wafer stages WST1 and WST2
Is the same as in the first embodiment, the stage main body 63X ₁ ,
63X ₂ and a wafer table are included, and the basic configurations are the same although the shapes are different. However, the X moving mirror 97X of the wafer stage WST2 corresponds to the arrangement of the interferometer described in detail below.
2 is different in that it is provided at the + X side end portion of 2.

Next, the interferometer system of the second embodiment will be described with reference to FIG.

In the interferometer system of this embodiment, as shown in FIG. 7, an interferometer beam having a length measuring axis parallel to the X axis is emitted from the + X direction toward the optical axis AX of the projection optical system PL. X-axis interferometer 40X ₁ , X-axis interferometer 40X ₂ that irradiates an interferometer beam having a measuring axis parallel to the X-axis toward the optical axis of alignment system ALG from + X direction, and X-axis interferometer 40X ₁ a Y-axis direction one side (-Y direction) is provided at a predetermined interval, the X axis interferometer 40X ₃ that irradiates an interferometer beam having a measurement axis parallel to the X axis with respect to, X-axis interferometer The X-axis interferometer 40X ₄ for irradiating an interferometer beam having a length-measuring axis parallel to the X-axis, which is provided on the other side (+ Y direction) of 40X _{1 at} a predetermined interval, having a X-axis interferometer 40X long axis measurement axes intersecting perpendicularly measurement of ₁ in the optical axis AX And Y-axis interferometer 40Y ₁ that irradiates an interferometer beam, a Y-axis interferometer 40Y ₂ that irradiates an interferometer beam having a major axis measurement which intersects perpendicularly with the X-axis interferometer 40X ₂ in the optical axis of the alignment system ALG Is equipped with.

Of the interferometers that form the interferometer system, the X-axis interferometer 40X ₁ and the Y-axis interferometer 40Y ₁ are used to expose a wafer placed on one of wafer stages WST1 and WST2. The stage coordinate system in operation (hereinafter referred to as the "exposure coordinate system") is defined,
By the X-axis interferometer 40X ₂ and the Y-axis interferometer 40Y ₂ , a stage coordinate system during alignment operation with respect to a wafer placed on one of the wafer stages WST1 and WST2 (hereinafter referred to as “alignment coordinate system”). Say)
Is prescribed.

[0149] Further, X-axis interferometer 40X ₃ is an alignment operation the wafer stage WST1 from the exposure operation, or an interferometer used in the transition from the alignment operation to the exposure operation, X-axis interferometer 40X ₄ is a wafer The stage WST2 is an interferometer used when shifting from the exposure operation to the alignment operation or from the alignment operation to the exposure operation.

The Y-axis interferometers 40Y ₁ and 40Y ₂ are shown in FIG.
As you can see, each wafer stage WST1, WST
The Y moving mirrors 96Y and 97Y provided on the upper part 2 are provided with a space L2 larger than the length in the X-axis direction.

Next, in parallel processing using wafer stage WST1 and wafer stage WST2 in the present embodiment, wafer stage WST1 moves from below projection optical system PL (first specified region where exposure is performed) to alignment system ALG. Regarding the position exchange of each wafer stage, taking as an example the case where the wafer stage WST2 moves from the second specific region to the first specific region while moving downward (the second specific region in which wafer exchange and wafer alignment are performed), FIG. A description will be given based on FIG.

As is apparent from FIG. 7, in the present embodiment, both the first specific area in which the exposure is performed and the second specific area in which the wafer exchange and the wafer alignment are performed are wafer stage WST1 and wafer stage WST2.
Is also used in.

In the present embodiment, the position for wafer exchange (below the alignment system ALG) and the position for wafer alignment are shared, but the present invention is not limited to this. The position for wafer exchange may be provided (independently) separately from the position for wafer alignment (the position below the alignment system ALG). In addition, when a wafer exchange position is provided separately (independently),
Within the movable range of each stage and on the movement path when each stage moves from below the projection optical system PL to below the alignment system ALG, or from below the alignment system ALG to below the projection optical system PL. It is desirable to provide a wafer exchange position on the moving path when moving from the viewpoint of throughput and downsizing of the apparatus.

In FIG. 7, the wafer W1 placed on the wafer stage WST1 is exposed, the wafer is exchanged on the wafer stage WST2, and then the wafer W2 after the exchange is aligned. The state is shown. Note that the exposure operation, alignment operation, and the like performed on the wafer placed on each stage are performed in the same manner as in the above-described first embodiment.

Since these operations are completed earlier in the wafer exchange / alignment operation on the wafer stage WST2 side, the stage controller 19 is shown in FIG. 9 (A) in response to an instruction from the main controller 20. Wafer stage WST2 is driven by a predetermined distance in the + Y direction and the + X direction toward the standby position. During the movement of the wafer stage WST2, as shown in FIG.
When wafer stage WST2 advances to a position where the interferometer beams from X ₂ and 40X ₄ simultaneously strike movable mirror 97X, main controller 20 uses the value of X-axis interferometer 40X ₂ via stage controller 19. The X-axis interferometer 40X ₄ is preset and the interferometer measurement value is taken over. afterwards,
The position of wafer stage WST2 is determined by interferometers 40X ₄ , 4
It will be managed based on the measured value of 0Y ₂ .

In this case, the standby position shown in FIG. 9A is a position where the Y position of wafer stage WST2 can be measured by linear encoder ENC2 (a state where main scale 31B is inserted in reader 33B). Position) and the position of wafer stage WST2 can be controlled by X-axis interferometer 40X ₄ and Y-axis interferometer 40Y ₂ . Then, wafer stage WST
2 stands by at a predetermined waiting position.

On the wafer stage WST1 side, when the exposure of the wafer W1 is completed, the stage controller 19 drives the wafer stage WST2 in the + X direction in response to an instruction from the main controller 20. Simultaneously with the start, wafer stage WST1
Is driven in the + Y direction to a position whose Y-axis direction position can be measured by the linear encoder ENC1. Also during this movement, main controller 20 takes over the measurement values of X-axis interferometer 40X ₁ and X-axis interferometer 40X ₃ as described above.
FIG. 9B shows a state where wafer stage WST1 has moved its Y position to a position where it can be measured by linear encoder ENC1.

On the other hand, from the state of FIG. 9A, when the wafer stage WST2 is moved by a predetermined amount in the + X direction, the interferometer beam from the Y-axis interferometer 40Y ₂ is directed to the Y moving mirror 97Y of the wafer stage WST2. It won't hit. At this point, the interferometer beam from the Y-axis interferometer 40Y ₁ also does not hit the Y moving mirror 97Y. This is because the interval L2 (see FIG. 7) between the interferometer beams from the adjacent Y-axis interferometers is longer than that of the Y moving mirror 97Y, as described above.

Therefore, based on the instruction from the main controller 20, the stage controller 19 is in the middle of the above movement,
The interferometer beam from the Y-axis interferometer 40Y ₂ is moved by the Y moving mirror 97.
At any time until it does not hit Y, the position measuring device used for measuring the Y position of wafer stage WST2 is switched from Y-axis interferometer 40Y ₂ to linear encoder ENC2, and Y-axis interferometer 4 at the time of switching.
Save the value of 0Y ₂ . Further, in the stage control device 19, from the time of switching to the linear encoder ENC2, the second stage drive system is servo-controlled based on the detection value of the linear encoder ENC2, and the wafer stage WS
The Y position of T2 is kept constant.

In this way, when wafer stages WST1 and WST2 reach the position shown in FIG. 9B, stage controller 19 moves wafer stage WST2 in the + X direction in response to an instruction from main controller 20. Further, the wafer stage WST1 is started to be driven in the −X direction.

During this movement, as shown in FIG. 10 (A), on wafer stage WST2 side, wafer stage WST2 is moved to a position where Y moving mirror 97Y strikes the interferometer beam of Y-axis interferometer 40Y _1. Further, since it moves in the + X direction, the stage controller 19 uses the Y-axis interferometer 4
Immediately after the 0Y ₁ interferometer beam hits the Y moving mirror 97Y, the value of the Y-axis interferometer 40Y ₁ is saved in accordance with the instruction from the main control device 20. Preset to the value of 40Y ₂ . As a result, the position measuring device used for measuring the Y position of wafer stage WST2 is switched from linear encoder ENC2 to Y-axis interferometer 40Y ₁ . From that point on, the position of wafer stage WST2 is determined by interferometers 40X ₄ , 40
Measured by Y ₁ .

On the other hand, also on the wafer stage WST1 side, since the interferometer beam from the Y-axis interferometer does not hit at all during the movement in the −X direction, the Y-axis interference is caused. At any time until the interferometer beam from the total 40Y ₁ does not hit the Y moving mirror 96Y, the position measuring device used for measuring the Y position of the wafer stage WST1 is switched from the Y-axis interferometer 40Y ₁ to the linear encoder ENC1. At the same time, the value of the Y-axis interferometer 40Y ₁ at the time of switching is stored. Moreover, in the stage control device 19, from the time of switching to the linear encoder ENC1, the first stage drive system is servo-controlled based on the detection value of the linear encoder ENC1 to keep the Y position of the wafer stage WST1 constant. There is.
Then, in the stage control device 19, until the position where the interferometer beam of the Y-axis interferometer 40Y ₂ hits the Y moving mirror 96Y,
Wafer stage WST1 is further moved in the −X direction, and Y
Immediately after the interferometer beam of the axial interferometer 40Y ₂ hits the Y moving mirror 97Y, the value of the Y-axis interferometer 40Y ₂ is saved in accordance with the instruction from the main controller 20. Preset to the value of the axis interferometer 40Y ₁ .

After that, in the stage controller 19, each of the wafer stages WST1 and WST2 is moved to the position shown in FIG. 10 (B) via each of the linear motors constituting the first and second stage drive systems. As a target position,
In addition, while sequentially transferring the measurement values of the X-axis interferometer, they are driven along predetermined moving paths. Then, the position of wafer stage WST1 is measured by the coordinate system during alignment, and the position of wafer stage WST2 is measured by the coordinate system during exposure. As described above,
The position exchange of each wafer stage WST1 and WST2 is completed.

As described above, by using the interferometer system and the linear encoder, the position of each stage can be measured with high accuracy.

Even in the case of the second embodiment, wafer stage WST1 and WST2 are moved in parallel (wafer stage WST1 is set to projection optical system PL).
A state in which the wafer stage WST2 is moved in the + X direction from below the alignment system ALG to below the projection optical system PL in parallel with moving from below the alignment system ALG in the −X direction. In the above), there may be a state (period, section) in which both wafer stages WST1 and WST2 cannot be measured by the Y-axis interferometer. As described above, when neither of the two stages can be measured by the Y-axis interferometer, the Y position of the wafer stage WST1 is managed by the linear encoder ENC1 as described above, and the Y position of the wafer stage WST2 is also measured by the linear encoder as described above. It will be managed by ENC2. That is, when moving both stages in parallel, the stage control device 19 can control the Y positions of all stages to be managed by the linear encoder depending on the positions of both stages (both stages). Both have a control mode controlled by a linear encoder).

As described above, according to the exposure apparatus of this embodiment, one of the interferometer beams from the interferometers in the two directions for measuring the two-dimensional positions of wafer stages WST1 and WST2 is emitted from one interferometer. Even if there is a case where only the interferometer beam hits, that is, there is a case where one of the moving mirrors does not hit the interferometer beam at all, it is possible to perform highly accurate wafer stage position management and movement control. That is, since it is not necessary to increase the size of the movable mirror, it is possible to reduce the size of the stage, and it is possible to avoid cost reduction in mirror manufacturing and a decrease in stage rigidity due to an increase in weight, which deteriorates the position controllability of the stage. Can be suppressed. Therefore, according to the second embodiment, it is possible to improve the exposure accuracy as in the first embodiment described above.

In addition to this, in this embodiment, since only a single alignment system is provided and the second specific region is a common region for each wafer stage, the wafer stage base can be downsized. You can Therefore, the flatness of the upper surface of the stage base, which is the movement reference plane of the stage, can be improved due to the ease of processing, and the position controllability of the stage can be improved also from this point.

The alignment system ALG in the present embodiment is not limited to the image processing type alignment sensor, but may be the LIA sensor or the L sensor as described above.
The SA sensor may be used, or the double diffraction grating type sensor as described above may be used.

<< Third Embodiment >> Next, a third embodiment of the present invention will be described with reference to FIGS. Here, the same reference numerals will be used for the same or equivalent components as those of the first and second embodiments described above, and the description thereof will be simplified or omitted.

The exposure apparatus according to the third embodiment is different from the exposure apparatuses according to the first and second embodiments described above.
Except for the difference in the configuration of the stage device and the difference in the arrangement of the alignment system as compared with the second embodiment, the configuration of the other parts is the same. Therefore, the difference will be mainly described below.

FIG. 11 is a plan view schematically showing the stage device 230 according to the third embodiment. This stage device 230 is similar to the first and second embodiments.
2 along the upper surface of the wafer stage base 12 independently in the X-axis direction which is the non-scanning direction and the Y-axis direction which is the scanning direction.
Two wafer stages WST1 and WST that move dimensionally
2, and first and second stage drive systems for driving the wafer stages WST1 and WST2, respectively.

As the first stage drive system for driving wafer stage WST1, as shown in the plan view of FIG. 11, one side of wafer stage base 12 in the Y-axis direction (-Y
Side), and an X-axis linear guide 8 extending in the X-axis direction
3X ₁ , X moving along the X-axis linear guide 83X ₁
The shaft slider 84X includes a Y-axis slider 272Y that moves in the Y-axis direction along a rectangular opening 55 formed through the + Y side surface and the −Y side surface of the X-axis slider 84X. Wafer stage WST1 is mounted on the upper surface of Y-axis slider 272Y in the vicinity of the end in the + Y direction. That is, in the present embodiment, the wafer stage WST1 is
Although it is composed only of the wafer table and the Z tilt drive mechanism that supports the wafer table in the first embodiment described above, it is called wafer stage WST1 for convenience.

The X-axis linear guide 83X ₁ is composed of, for example, an armature unit. As shown in FIG. 12, the X-axis slider 84X has a substantially inverted U-shaped YZ section, and is arranged so as to surround the X-axis linear guide 83X ₁ from above and from the side. A magnetic pole unit (not shown) is provided in the concave portion of the X-axis slider 84X facing the X-axis linear guide 83X ₁ . By a magnetic pole unit and the X axis linear guides 83X _1, X-axis linear motor 180X for driving the wafer stage WST1 in the X-axis direction is constituted.

The Y-axis slider 272Y is composed of, for example, an armature unit. X-axis slider 84
A magnetic pole unit that constitutes a Y-axis linear motor together with the Y-axis slider 272Y is provided near the X rectangular opening 55. In the following, the above Y-axis linear motor is
The same reference numeral as that of the Y-axis slider 272Y that constitutes the mover will be used, and it will be referred to as a Y-axis linear motor 272Y as appropriate.

Returning to FIG. 11, the second stage drive system for driving the wafer stage WST2 also operates on the wafer stage W.
It has the same configuration as the first stage drive system for driving ST1. That is, as shown in the plan view of FIG. 11, the second stage drive system is arranged on the other side (+ Y side) in the Y axis direction of the wafer stage base 12 and extends in the X axis direction along the X axis linear guide 83X ₂ . The X-axis linear guide 83X ₂
And an X-axis slider 85X that moves in the Y-axis direction along a rectangular opening 56 formed through from the + Y side surface to the −Y side surface of the X-axis slider 85X. Wafer stage WST2 is mounted in the vicinity of the −Y direction end of the upper surface of Y-axis slider 274Y. In the present embodiment, the wafer stage WST
Similarly to the above, 2 includes only the wafer table and the Z tilt drive mechanism that supports the wafer table.

The X-axis linear guide 83X ₂ is composed of, for example, an armature unit. The X-axis slider 85X is similar to the above-mentioned X-axis linear guide 83X.
It is arranged so as to surround ₂ from above and from the side. A magnetic pole unit (not shown) is provided in the recess facing the X-axis linear guide 83X ₂ of the X-axis slider 85X. The magnetic pole unit and the X-axis linear guide 83X ₂ constitute an X-axis linear motor 181X that drives wafer stage WST2 in the X-axis direction.

The Y-axis slider 274Y is composed of, for example, an armature unit. X-axis slider 85
A magnetic pole unit that constitutes a Y-axis linear motor together with the Y-axis slider 274Y is provided near the X rectangular opening 56. In the following, the above Y-axis linear motor is
The same reference numeral as that of the Y-axis slider 274Y forming the mover is used, and the Y-axis linear motor 274Y is appropriately referred to.

The X-axis linear motors 180X, 181
The X and Y axis linear motors 272Y and 274Y are controlled by the stage controller 19 of FIG. 4 according to an instruction from the main controller 20.

Incidentally, wafer stages WST1 and WST2
Drive means may be provided for making the Y axis movable with respect to each of the Y-axis sliders 272Y and 274Y. As the driving means, for example, one using a Lorentz force (electromagnetic interaction) such as a linear motor or a voice coil motor,
It is possible to use an electromagnet, a rotary motor, or the like.
In this case, wafer stages WST1 and WST2 have three degrees of freedom with respect to Y-axis sliders 272Y and 24Y (X-axis, Y-axis).
Axis, θz, or Z axis, θx, θy) may be movable in at least one degree of freedom direction, or six degrees of freedom (X, Y, Z, θx, θy, θz). It is also possible to adopt a configuration in which at least two of the above degrees of freedom can be moved. By doing so, the X-axis linear motors 180X, 181X and the Y-axis linear motors 272Y, 2
74Y can be used as a coarse movement mechanism of each stage, and the drive means can be used as a fine movement mechanism.

Further, wafer stages WST1 and WST2
May be supported on the stage base 12 by using an air bearing or the like, but by providing a driving means, a driving force in the Z-axis direction is provided between the wafer stages WST1 and WST2 and the Y-axis sliders 272Y and 274Y. May be generated and the driving force may be used to support wafer stages WST1 and WST2. By doing so, the wafer stage WST such as the stage base 12
It is possible to omit a member having a surface (movement reference surface) having a high degree of flatness that serves as a movement reference for 1 and WST2.

The lower surface of wafer stage WST1 is shown in FIG.
As shown in FIG. 2, a reading device 33A forming a linear encoder ENC1 for measuring the Y position of wafer stage WST1 is provided.
From the + X side surface of the X-axis slider 84X, the main scale 31 constituting the linear encoder ENC1
A is projectingly provided in the + Y direction.

Similarly, on the lower surface of wafer stage WST2, as shown in FIG. 11, wafer stage WST2
Reader 33B ₁ constituting the linear encoder ENC2 for measuring the Y position is provided for, said read device 33
Opposite the B _1, from the -X side of the X-axis slider 85X, main scale 31B ₁ constituting the linear encoder ENC2 is projected toward the -Y direction.

Further, on the + Y side surface of the X-axis slider 85X, a reading device 33B ₂ which constitutes a linear encoder ENC2 ₂ for measuring the X position of the wafer stage WST2.
The main scale 31B ₂ is provided so as to face the reading device 33B ₂ from the support member 52D in the + X direction so as to be substantially parallel to the X-axis linear guide 83X ₂ .

Next, the interferometer system of the third embodiment will be described with reference to FIG.

As shown in FIG. 11, the interferometer system of this embodiment irradiates an interferometer beam having a length measuring axis parallel to the X axis from the + X direction toward the optical axis AX of the projection optical system PL. The X-axis interferometer 40X ₁ , the X-axis interferometer 40X _{2 for} irradiating the interferometer beam having a length-measuring axis parallel to the X-axis toward the optical axis of the alignment system ALG from the + X direction, and the light of the projection optical system PL. The Y-axis interferometer 40Y ₁ for irradiating an interferometer beam having a length-measuring axis perpendicular to the length-measuring axis of the X-axis interferometer 40X _{1 on} the axis AX, and the X-axis interferometer 40X for the optical axis of the alignment system ALG. ₂ and a Y-axis interferometer 40Y ₂ for irradiating an interferometer beam having a length-measuring axis that intersects ₂ perpendicularly.

The X-axis interferometer 40X₁And the Y-axis interferometer
40Y₁Position measurement during exposure operation of each stage
The X-axis interferometer is defined by the exposure coordinate system used for
40X ₂And Y-axis interferometer 40Y₂Depending on the
Used for position measurement during stack exchange / alignment operation
The coordinate system for alignment is specified.

Next, in parallel processing using wafer stage WST1 and wafer stage WST2 in the present embodiment, wafer stage WST1 moves from immediately below projection optical system PL to immediately below alignment system ALG, and wafer stage WST2 moves from the alignment region. The position exchange of each wafer stage will be briefly described by taking the case of moving to the exposure area as an example.

FIG. 11 shows a state in which exposure operation is performed on wafer W1 on wafer stage WST1 side and alignment operation is performed on wafer stage WST2 side. When the alignment operation on the wafer stage WST2 side is completed from this state, the stage controller 1
9 drives wafer stage WST2 in the + Y direction in response to an instruction from main controller 20. In this case, FIG.
As can be seen from the above, the wafer stage WST1 and the wafer stage WST2 overlap each other in the X-axis direction (arranged in the Y-axis direction), and the X-moving mirror 97 on the wafer stage WST2.
There exists a condition where X is not hit by the interferometer beam from the X-axis interferometer.

Therefore, based on an instruction from the main controller 20, the stage controller 19 is in the middle of the above movement,
The interferometer beam from the X-axis interferometer 40X ₂ is moved by the X-moving mirror 97.
At any time until it does not hit X, the position measuring device used for measuring the X position of wafer stage WST2 is switched from X-axis interferometer 40X ₂ to linear encoder ENC2 ₂ , and the X-axis interferometer at that time is switched. Four
Save the value of 0X ₂ . Further, in the stage controller 19, from the time of switching the linear encoder ENC 2 ₂ Based on the detection value of the linear encoder ENC 2 _2,
X-axis linear motor 181 forming the second stage drive system
The X position of wafer stage WST2 is kept constant by servo-controlling X.

Then, when the exposure operation of wafer stage WST1 is completed, based on the instruction from main controller 20, wafer controller WS is controlled by stage controller 19.
T1 is driven in the -Y direction. At this time, when the X-axis interferometer that measures the X position of wafer stage WST1 is taken over from X-axis interferometer 40X ₁ to X-axis interferometer 40X ₂ , X-axis interferometer 4 moves to X-moving mirror 97X of wafer stage WST2.
Since the interferometer beam from 0X ₁ will hit, the stage controller 19 stores the value of the X-axis interferometer 40X ₁ in advance at that stage in response to the instruction from the main controller 20. Preset to the value of the X-axis interferometer 40X ₂ that was used.
The state at this time is shown in FIG.

After this, as in the first and second embodiments, under the instruction of the main controller 20, the stage controller 19 causes the Y-axis interferometer 40Y ₁ and the encoder ENC.
Wafer stage WST1 is moved to immediately below alignment system ALG by using 1 and Y-axis interferometer 40Y ₂ in order.

Similarly, under the instruction of the main controller 20, the stage controller 19 uses the Y-axis interferometer 40Y ₂ , the encoder ENC2 ₁ , and the Y-axis interferometer 40Y _{1 in} that order to allow the wafer stage WST2 to project onto the projection optical system. It is moved to just below PL.

As described above, by using the interferometer system and the linear encoder, the position of each stage can be measured with high accuracy.

That is, according to the present embodiment, by using the linear encoder together with the interferometer as the wafer stage position measuring device, the wafer stages WST1 and WS are
Among the interferometer beams from the two-direction interferometer that measures the two-dimensional position of T2, only one interferometer beam hits, that is, one moving mirror does not hit the interferometer beam at all. Even if there is, it is possible to perform highly accurate position management and movement control of the wafer stage.
That is, it is not necessary to increase the size of the movable mirror, and it is possible to avoid the high cost of manufacturing the mirror and the reduction in the position controllability of the wafer stage due to the increase in size. This makes it possible to improve the position controllability of the wafer stage.

Further, in order to prevent the interferometer beam from being cut off from the moving mirror on the wafer stage, it is not necessary to increase the number of interferometers or the number of measuring axes of the interferometers. The cost can be reduced.

Furthermore, the axis passing through the projection center of the projection optical system and the detection center of the alignment system is the X axis of the measurement axis of each interferometer.
It is not parallel to either the axis or the Y-axis (oblique with respect to each axis direction), in other words, the projection optical system P
Since the projection center of L and the detection center of the alignment system are diagonally arranged on the wafer stage base 12, the projection center is detected as compared to the case where each area is arranged parallel to any axis. The distance in the central X-axis and Y-axis directions can be shortened. That is, the footprint of the exposure apparatus can be reduced. Also, the number of interferometers can be reduced (in the second embodiment, six interferometers were used, but in the third embodiment, it is sufficient to use four interferometers). . Further, since the measurement axes during the exposure operation and the alignment operation can be in the same direction, the position control of each wafer stage can be performed without increasing the number of movable mirrors or interferometers provided on the wafer stage, for example. Since it can be performed, the cost for manufacturing the exposure apparatus can be reduced.

In the third embodiment as well, as in the first and second embodiments, the axis passing through the center of the projection optical system and the detection center of the alignment system is the measurement axis (X
It may be arranged so as to be parallel to either one of the axis and the Y-axis).

In each of the above embodiments, a linear encoder (optical type) is used as the second position measuring device, but the present invention is not limited to this, and the second position measuring device is not limited to this.
As a position measuring device, of course, a magnetic (electromagnetic) encoder (Magnesc scale), Hall sensor (displacement sensor using a Hall element), electrostatic capacity sensor (displacement of an object using electrostatic capacity change) A displacement sensor for measuring) or the like may be used.

In each of the above embodiments, the case where the movable mirror is fixed on the wafer stage as the reflecting surface used for measuring the positions of the wafer stages WST1 and WST2 has been described, but the present invention is not limited to this.
The side surfaces of 1 and WST2 may be mirror-finished to form a reflecting surface. Furthermore, in each of the above-described embodiments, the linear scale has a structure in which the main scale side is fixed and the index scale side is moved, but the opposite may be done.

In each of the above embodiments, the case where both wafer stages WST1 and WST2 move two-dimensionally has been described, but the present invention is not limited to this. That is, in a stage device having a plurality of stages whose positions are measured by an interferometer, the measurement beam from the interferometer is reflected by movement of another stage in any section within the movement area of at least one specific stage. The present invention is preferably applicable even if the specific stage is a stage that moves only in one direction when the irradiation of the surface is blocked.

In each of the above embodiments, the case where the present invention is applied to the wafer stage has been described, but the present invention is not limited to this. For example, when a plurality of reticle stages are provided, the plurality of reticle stages are provided. On the other hand, the present invention may be applied.

In each of the above embodiments, the case where the stage device and the stage position management method according to the present invention are applied to an exposure apparatus has been described, but the present invention is not limited to this.
The present invention can be applied to other precision machines as long as they have a plurality of moving stages.

Further, in each of the above embodiments, the case where the present invention is applied to the scanning exposure apparatus of the step-and-scan system or the like has been described, but the scope of application of the present invention is not limited to this. is there. That is, the present invention can be suitably applied to a step-and-repeat type reduction projection exposure apparatus.

The application of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, and for example, an exposure apparatus for liquid crystal for transferring a liquid crystal display element pattern onto a rectangular glass plate, a thin film magnetic head, a micromachine. And DNA
It can be widely applied to exposure apparatuses for manufacturing chips and the like. Further, not only microdevices such as semiconductor elements, but also glass substrates or silicon wafers for manufacturing reticles or masks used in light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern onto a substrate.

The light source of the exposure apparatus of the above embodiment is
Not only UV pulse light sources such as F ₂ laser light source, ArF excimer laser light source, KrF excimer laser light source, but also ultra-high pressure mercury lamps that emit g-line (wavelength 436 nm), i-line (wavelength 365 nm) and other bright lines can be used. Is.

Further, a single-wavelength laser light in the infrared region or visible region emitted from a DFB semiconductor laser or a fiber laser is amplified by a fiber amplifier doped with, for example, erbium (or both erbium and ytterbium), and nonlinear It is also possible to use a harmonic wave whose wavelength is converted into ultraviolet light using an optical crystal. Further, the magnification of the projection optical system is not limited to a reduction system, and may be a unity magnification system or a magnification system.

As for the semiconductor device, the step of designing the function / performance of the device, the step of producing a reticle based on this design step, the step of producing a wafer from a silicon material, and the reticle on the reticle by the exposure apparatus of the above-described embodiment. It is manufactured through a step of transferring the device pattern formed on the wafer to a wafer, a device assembly step (including a dicing step, a bonding step, a packaging step), an inspection step, and the like. According to this, since the pattern of the reticle is accurately transferred onto the wafer by the exposure apparatus of the above-described embodiment, the yield of the final product device can be improved and its productivity can be improved. .

[0208]

As described above, according to the stage device and the stage position management method of the present invention, the positioning accuracy of the stage can be improved without increasing the cost.

Further, the exposure apparatus according to the present invention has an effect that the pattern can be transferred onto the substrate with high accuracy.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic configuration of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view of the stage device shown in FIG.

FIG. 3 is a perspective view showing one of the wafer stage of FIG. 2 and its periphery, taken out.

FIG. 4 is a block diagram showing a control system of the first embodiment.

5A and 5B are views (No. 1) for explaining the position measuring method at the time of parallel operation of the two wafer stages according to the first embodiment.

6A and 6B are views (No. 2) for explaining the position measuring method when the two wafer stages according to the first embodiment are operated in parallel.

FIG. 7 is a plan view of a stage device according to a second embodiment of the present invention.

FIG. 8 is a diagram (No. 1) for explaining the position measuring method when the two wafer stages according to the second embodiment are operated in parallel.

9A and 9B are views (No. 2) for explaining the position measuring method at the time of parallel operation of two wafer stages according to the second embodiment.

FIG. 10A and FIG. 10B are views (No. 3) for explaining the position measuring method at the time of the parallel operation of the two wafer stages according to the second embodiment.

FIG. 11 is a plan view of a stage device according to a third embodiment of the present invention.

FIG. 12 is a perspective view showing the wafer stage of FIG. 11 and its drive system.

FIG. 13 is a plan view showing an example of the stage device in FIG. 11 in parallel operation.

[Explanation of symbols]

10 ... exposure apparatus, 19 ... (part of a mobile control unit) stage controller 20 ... main control unit (control device, part of a mobile control device), 30 ... stage device, 40X _1, 40X _2, 4
0Y _{1 to} 40Y ₃ ... Interferometer (first position measuring device), AL
G1, ALG2 ... Alignment system (mark detection system), E
NC1, ENC2 ... Linear encoder (second position measuring device), PL ... Projection optical system, R ... Reticle (mask),
SA1 ... Exposure area (first specific area), SA2a, SA2
b ... Alignment area (second specific area), W ... Wafer (substrate), WST1 ... Wafer stage (first stage), WST2 ... Wafer stage (second stage).

Claims (32)

[Claims] 1. A plurality of stages respectively moving in respective moving areas including a first specific area in which a first process is performed and a second specific area in which a second process different from the first process is performed. In the stage device, when each of the stages is at least in the first specific region and the second specific region, a reflecting beam provided on each of the stages is irradiated with a measuring beam to determine the position of each of the stages. A first position measuring device for measuring respectively; position measurement of each stage by the first position measuring device in a section in which each stage moves between the first specific region and the second specific region; A second position measuring device that measures the position of each stage by a method different from that of the first position measuring device when the position is within a predetermined range including at least a predetermined partial area where the stage is disabled. A predetermined stage of the plurality of stages is moved to the second specific region from the first specific region during the first movement, and the other stage of the plurality of stages is moved to the first stage. A movement control device that controls the movement of the plurality of stages so as to perform a second movement to move from the two specific areas toward the first specific area; and the first movement and the second movement. During at least a part of the period in which the two positions are simultaneously measured by the second position measuring device. 2. The control device for switching the first and second position measuring devices used for measuring the position of each stage according to the position of each stage. Stage device. 3. The control device is incapable of measuring the position of each stage by the first position measuring device in a section in which each stage moves between the first specific region and the second specific region. The stage according to claim 2, wherein the position of the stage in the measurement direction of the second position measuring device is kept constant based on the measurement value of the second position measuring device. apparatus. 4. The stage device according to claim 1, wherein the second position measuring device is any one of a linear encoder, a hall sensor, and a capacitance sensor. 5. The stage apparatus according to claim 1, wherein each of the stages is movable independently of each other along a two-dimensional plane. 6. The stage apparatus according to claim 1, wherein the first specific area is also used in the plurality of stages. 7. The stage device according to claim 6, wherein the second specific area is also used in the plurality of stages. 8. The stage apparatus according to claim 6, wherein the second specific region is provided individually for each of the plurality of stages. 9. The third process is performed in the third specific area via a third specific area in which a third process different from the first and second processes is performed during the first movement. After moving, it moves towards the 2nd specific field, The stage device according to any one of claims 1 to 8 characterized by things. 10. Positions of a plurality of stages respectively moving in respective moving regions including a first specific region in which the first process is performed and a second specific region in which a second process different from the first process is performed. Is a stage position management method for managing, wherein when each of the stages is at least in the first specific region and the second specific region, a reflecting beam provided on each stage is irradiated with a length measuring beam to A first step of measuring the position of each stage and managing the position of each stage based on the measurement result; a section in which each stage moves between the first specific region and the second specific region When the length measurement beam does not hit the reflection surface of each stage, the position of each stage is measured by a method different from that in the first step, and based on the measurement result. A second step of managing the position of each stage; during the first movement for moving a predetermined stage of the plurality of stages from the first specific region toward the second specific region, While moving the plurality of stages so as to perform a second movement for moving the other stage of the plurality of stages from the second specific region toward the first specific region, the first movement and the first movement are performed. A stage position management method comprising: a third step of simultaneously measuring the both stages by the different methods in at least a part of the period in which the second movement is performed in parallel. 11. The stage position management method according to claim 10, wherein the first and second steps are selectively executed in accordance with the position of each stage. 12. The method according to claim 11, further comprising a fourth step of maintaining the position of each stage in the measurement direction constant based on the position measurement result of each stage in the second step. Stage position management method. 13. The position of each of the stages is measured by using any one of a linear encoder, a Hall sensor, and a capacitance sensor in the second step, according to any one of claims 10 to 12. Stage position management method described in. 14. Each stage comprises two independent stages.
The stage position management method according to any one of claims 10 to 13, wherein the stage position management method is movable along a dimensional plane. 15. The first specific region is also used in the plurality of stages.
15. The stage position management method according to any one of 14. 16. The stage position management method according to claim 15, wherein the second specific area is shared by the plurality of stages. 17. The stage position management method according to claim 15, wherein the second specific region is individually provided for each of the plurality of stages. 18. An exposure method for transferring a pattern formed on a mask onto a substrate via a projection optical system, wherein the stage position management method according to claim 10 is used. Managing the stage position, measuring information about the position of the substrate in the second specific region, and based on information about the position of the substrate measured in the second specific region, the pattern of the pattern in the first specific region An exposure method characterized by performing transfer. 19. The predetermined stage passes through a third specific region in which a third process for exchanging a substrate placed on the stage is performed during the first movement, and the third specific region is passed. After performing the third process in the area,
The exposure method according to claim 18, wherein the exposure method moves toward the second specific region. 20. A device manufacturing method comprising the step of transferring a device pattern formed on a mask by using the exposure method according to claim 18 or 19 onto a substrate. 21. An exposure apparatus for transferring a mask pattern onto a substrate via a projection optical system, comprising: at least one mark detection system for detecting a mark on the substrate; The inside of each moving area including one specific area and the second specific area below the mark detection system is held independently by each holding the substrate.
A first stage and a second stage that move dimensionally; and when each of the stages is at least in the first specific region and the second specific region, irradiating a measuring beam onto a reflecting surface provided in each stage A first position measuring device that measures the position of each of the stages; and the first position measuring device that measures the position of each stage in a section in which the stage moves between the first specific region and the second specific region. A second position measuring device that measures the position of each stage by a method different from that of the first position measuring device when the position of each stage is within a predetermined range including at least a predetermined partial area where position measurement is impossible. And; during the first movement in which the first stage is moved from the first specific area toward the second specific area, the second stage is moved from the second specific area toward the first specific area. A movement control device that controls movements of the plurality of stages so as to perform a second movement that causes the first movement and the second movement to be performed in parallel for at least a part of the period. 2. An exposure apparatus, wherein both of the stages are simultaneously measured by the second position measuring device. 22. The exposure apparatus according to claim 21, further comprising a control device that switches a measuring device used for measuring the position of each stage according to a moving position of each stage. 23. As the mark detection system, a first mark detection system and a second mark detection system, which are respectively arranged at positions opposite to each other with respect to the projection optical system, are provided, and the first stage includes the Moving within a region including one specific region and a second specific region below the first mark detection system, the second stage includes a second specific region below the first specific region and the second mark detection system. 23. The exposure apparatus according to claim 21, wherein the exposure apparatus moves within an area including the area. 24. The first and second mark detection systems are arranged such that their detection centers are located at positions symmetrical with respect to the projection center of the projection optical system. The exposure apparatus according to. 25. As the mark detection system, only a single mark detection system is provided, and the first stage and the second stage are both common to the first specific region and below the mark detection system. Second
23. The exposure apparatus according to claim 21, wherein the exposure apparatus moves in an area including a specific area. 26. The axis passing through the projection center of the projection optical system and the detection center of the mark detection system is in the first axis direction in which the first position measuring device measures the position of each stage, and The exposure apparatus according to claim 25, wherein the exposure apparatus is parallel to any measurement axis in the second axis direction which is orthogonal to each other. 27. The axis passing through the projection center of the projection optical system and the detection center of the mark detection system is the first axis direction in which the first position measuring device measures the position of each stage, and 26. The exposure apparatus according to claim 25, wherein the exposure apparatus is not parallel to any measurement axis in the second axis direction which is orthogonal to each other. 28. The first stage passes through a third specific area for exchanging a substrate placed on the stage during the first movement, and the substrate exchange is performed in the third specific area. 28. After the operation is performed, it further moves toward the second specific region.
The exposure apparatus according to any one of 1. 29. An exposure apparatus for transferring a pattern of a mask onto a substrate via a projection optical system, the mark detection system detecting a mark on the substrate; a first specific region below the projection optical system. And a second specific area below the mark detection system, each of which holds the substrate and moves independently in a two-dimensional manner.
A stage and a second stage; a position measuring device that irradiates a measuring beam onto a reflecting surface provided on each stage to measure the position of each stage, and the projection center of the projection optical system and the position measuring device. The axis passing through the detection center of the mark detection system is not parallel to any measurement axis in the first axis direction in which the position measuring device measures the position of each stage and the second axis direction orthogonal to the first axis direction. Exposure equipment. 30. An exposure apparatus for forming a predetermined pattern on a substrate via an optical system, comprising: a first member movable in a first axial direction; and a first member in the first axial direction with respect to the first member. And a second member that is installed separately in a second axial direction orthogonal to a plane orthogonal to the optical axis of the optical system and is movable in the first axial direction; and the second member that moves with the movement of the first member. A third member that moves in the first axis direction and that can move in the second axis direction with respect to the first member; moves in the first axis direction as the second member moves, and A fourth member movable in the second axial direction with respect to two members; connected to the third member in the vicinity of an end of the third member on the second member side in the second axial direction,
A first stage for holding the substrate; and a second stage for holding the substrate, which is connected to the fourth member near the end of the fourth member on the first member side in the second axis direction. , Each of the first stage and the second stage,
An exposure apparatus capable of moving within a moving region including a first specific region including a lower part of the optical system and a second specific region different from the first specific region. 31. The first stage and the second stage each include one of the third member and the fourth member when moving between the first specific region and the second specific region. 31. The exposure apparatus according to claim 30, wherein each of them moves at least in the first axis direction together with a specific member connected thereto. 32. At least one of the first stage and the second stage is movably connected to the specific member.
1. The exposure apparatus according to 1.